TWI901922B - Substrate processing apparatus, substrate bonding system including the same and substrate processing method using the same - Google Patents

Abstract

The invention relates to a substrate processing apparatus, a substrate bonding system including the same and a substrate processing method using the same, which disclose a substrate bonding technique, by adjusting the ratio of the process gas, the control gas, the carrier gas on the substrate center and the substrate edge when performing the plasma process of hybrid bonding for bonding two substrates, to ensure the uniformity of the hydroxyl group (-OH) formed on the substrate.

Description

Substrate processing apparatus, substrate bonding system including the same, and substrate processing method

This invention relates, as a substrate processing apparatus, a substrate bonding system including the same, and a substrate processing method, more specifically to a technique for bonding substrates by adjusting the ratio of process gas, control gas, and carrier gas between the center and edge of the substrate during plasma processing for hybrid bonding of two substrates, thereby ensuring the uniformity of hydroxyl groups (-OH) generated on the substrate.

To achieve high-density integration of semiconductor devices, three-dimensional lamination technology is applicable. Compared with two-dimensional integration technology, three-dimensional lamination technology significantly improves the integration density per unit area or shortens the wiring length, thereby improving chip performance. Moreover, new characteristics can be achieved through the combination of different components.

Three-dimensional layering technology generally includes C2C (Chip to Chip), C2W (Chip to Wafer), and W2W (Wafer to Wafer) methods.

W2W (Wafer-to-Wafer) stacking is a method of manufacturing chips by stacking wafers together and then performing a dicing process. Compared to C2C (Consumer-to-Consumer) or C2W (Consumer-to-Wafer) stacking, the number of bonding processes is greatly reduced, which is advantageous for mass production.

In the past, due to various technical limitations, C2C stacking was used to manufacture three-dimensional stacked semiconductors in semiconductor manufacturing processes. However, considering mass production and return on investment, the trend has gradually shifted to using W2W stacking.

In particular, compared to simply improving integration through stacking of semiconductor memory and the like, W2W stacking is a more effective choice when planning for improved chip performance through three-dimensional stacking.

The proposed technique involves adjusting the uniformity of hydroxyl groups (-OH) generated on the wafer by adjusting the ratio of process gas supplied to the center and edge of the plasma processing space when hybrid bonding is applied via plasma substrate processing.

However, this conventional technology, which simply divides the process gas into a central and a peripheral portion using a flow controller, has the problem of not being able to precisely control the formation of hydroxyl groups (-OH) on the wafer. Therefore, it has limitations in ensuring the uniformity of hydroxyl group (-OH) formation on the wafer substrate.

This invention is proposed to solve the problems of the prior art as described above. Its purpose is to provide a solution that can ensure the uniformity of hydroxyl (-OH) generated on the substrate by adjusting the supply ratio of each of the process gas, control gas, and carrier gas between the center and edge of the substrate during plasma processing.

In particular, its purpose is to solve the problem that previous technologies could not precisely control the generation of hydroxyl groups (-OH) on the wafer substrate because they simply divided the process gas into a central part and a contour part by a flow controller to distribute the supply.

The purpose of this invention is not limited to the foregoing, and other purposes and advantages of this invention not mentioned can be understood from the following description.

An embodiment of the substrate processing apparatus according to the present invention for solving the aforementioned problem includes: a process chamber providing a processing space in which a plasma processing for generating hydroxyl groups (-OH) on the substrate surface is formed; a substrate support member disposed in the processing space to support the substrate; a gas supply member supplying a plurality of gases, including process gases, to the processing space; and a control member dividing the substrate, which is placed in the substrate support member, into a plurality of regions and adjusting the density of the process gases according to the regions of the substrate by independently controlling the flow rate of the plurality of gases supplied to each region, and adjusting the density of the process gases by adjusting the supply amount of one or more selected gases according to the regions of the substrate, thereby adjusting the uniformity of the hydroxyl groups (-OH) generated on the substrate surface.

Furthermore, the substrate processing apparatus may further include: a gas distribution component, disposed above the processing space of the process chamber to divide the plasma space, and causing multiple gases supplied by the gas supply component to diffuse toward the substrate placed in the substrate support component.

As an example, the gas supply component may include: a process gas supply source for supplying process gas; a control gas supply source for supplying control gas; a first flow controller for distributing the process gas to multiple regions of the plasma space corresponding to multiple regions of the substrate by adjusting the supply ratio of the process gas; and a second flow controller for distributing the control gas to multiple regions of the plasma space corresponding to multiple regions of the substrate by adjusting the supply ratio of the control gas, wherein the control component adjusts the density of the process gas in each of the multiple regions of the plasma space according to the region control supply ratio by means of the first flow controller and the second flow controller.

Furthermore, the gas distribution component may have an internal gas diffusion space, and the gas supply component may include: a carrier gas supply source for supplying carrier gas; and a third flow controller for distributing the carrier gas to multiple regions of the gas diffusion space corresponding to multiple regions of the substrate by adjusting the supply ratio of the carrier gas. The control component adjusts the density of the process gas in each of the multiple regions of the substrate according to the region control supply ratio by using the third flow controller.

Furthermore, the control component may adjust the rate of the process gas supplied to multiple areas of the substrate by means of the third flow controller according to the zone control supply amount.

As an example, the gas distribution component may include: an upper shower plate for receiving gas flowing into the upper plasma space; a gas diffusion space formed below the upper shower plate; and a lower shower plate for diffusing the gas in the diffusion space into the treatment space.

Furthermore, the upper shower panel may be provided with multiple gas flow paths for discharging carrier gas to each of multiple regions of the gas diffusion space corresponding to multiple regions of the substrate.

As an example, the upper shower panel may be provided with: a central gas flow path that discharges carrier gas to the central area of the gas diffusion space; and an edge gas flow path that discharges carrier gas to the edge area of the gas diffusion space.

Alternatively, the gas supply component may include a first supply pipe that supplies process gas and control gas to each of the multiple areas of the plasma space.

As an example, the gas supply component may include: a first central supply pipe for supplying process gas and control gas to the central region of the plasma space; and a first edge supply pipe for supplying process gas and control gas to the edge region of the plasma space.

Alternatively, the gas supply component may include a second supply pipe that supplies carrier gas to each of the multiple areas of the gas diffusion space.

As an example, the gas supply component may include: a second central supply pipe for supplying carrier gas to the central region of the gas diffusion space; and a second peripheral supply pipe for supplying carrier gas to the peripheral region of the gas diffusion space.

Alternatively, one embodiment of the substrate bonding system according to the present invention may include: the substrate processing apparatus for generating hydroxyl groups (-OH) on the substrate surface by plasma treatment; a cleaning apparatus for cleaning the substrate surface after plasma treatment; a substrate bonding apparatus for bonding the substrate with hydroxyl groups (-OH) formed on the surface; and an alignment apparatus for transferring the substrate to the substrate processing apparatus, the cleaning apparatus, and the substrate bonding apparatus.

Alternatively, an embodiment of the substrate processing method according to the present invention may include: a process gas supply step, in which process gas is supplied to multiple regions of a plasma space corresponding to multiple regions of the substrate by adjusting the supply ratio; a control gas supply step, in which control gas is supplied to multiple regions of the plasma space by adjusting the supply ratio; and a plasma space gas density adjustment step, in which the density is adjusted by... The process includes a control gas supply to adjust the process gas density of each of the multiple regions of the upper plasma space; a process gas diffusion step to diffuse the process gas into the lower plasma space via a gas distribution component; and a hydroxyl generation step to generate hydroxyl groups (-OH) with adjusted uniformity on the substrate surface using process gases with adjusted densities according to the multiple regions of the substrate.

Furthermore, the substrate processing method may further include: a gas diffusion space inflow step, in which process gas with density adjusted by the upper plasma space gas density adjustment step flows into the gas diffusion space of the gas distribution component; and a carrier gas supply step, in which carrier gas is supplied to multiple regions of the gas diffusion space corresponding to multiple regions of the substrate by adjusting the supply ratio, wherein the process gas diffusion step transmits the process gas with density adjusted by the carrier gas to multiple regions of the substrate in the lower plasma space.

Preferably, the process gas diffusion process can adjust the speed of the process gas delivered to multiple regions of the substrate in the lower plasma space according to the supply ratio of carrier gas supplied to multiple regions of the gas diffusion space.

As an example, the process gas supply step may be to distribute the process gas supply by means of a first flow controller that controls the supply flow rate of the process gas according to the supply ratio of the process gas in multiple areas of the plasma space.

As an example, the control gas supply step may involve distributing the control gas supply by means of a second flow controller that controls the supply flow rate of the control gas according to the supply ratio of the control gas in multiple regions of the plasma space.

As an example, the carrier gas supply step may be to distribute the supply by means of a third flow controller that controls the supply flow rate of the carrier gas according to the supply ratio of multiple regions of the diffusion space.

Alternatively, a preferred embodiment of the substrate processing method according to the present invention may include: a process gas supply step, in which process gas is supplied to the center and edge regions of a plasma space corresponding to the center and edge regions of the substrate by adjusting the supply ratio; a control gas supply step, in which control gas is supplied to the center and edge regions of the plasma space by adjusting the supply ratio; a plasma space gas density adjustment step, in which the process gas density in the center and edge regions of the plasma space is adjusted by the distribution and supply of the control gas; and a gas diffusion space inflow. The steps include: a density-adjusted process gas flowing into the gas diffusion space of a gas distribution component; a carrier gas supply step, distributing the carrier gas to the central and edge regions of the gas diffusion space corresponding to the central and edge regions of the substrate by adjusting the supply ratio; a process gas diffusion step, diffusing the process gas downward into the plasma space through the gas distribution component; and a hydroxyl group generation step, generating hydroxyl groups (-OH) with adjusted uniformity on the substrate surface using the process gas with adjusted density in the central and edge regions of the substrate.

According to this invention, when performing plasma processing, by adjusting the supply ratio of each of the process gas, control gas, and carrier gas between the center and edge of the substrate, the uniformity of hydroxyl groups (-OH) generated on the substrate can be ensured.

In particular, by controlling the density of the process gas according to the region in the plasma space, the process gas with the density adjusted according to the region in the gas diffusion space is transported to the downward plasma space via the carrier gas, thereby enabling precise adjustment of the generation of hydroxyl groups (-OH) according to the region of the substrate.

Furthermore, by adjusting the supply ratio of the carrier gas, the rate of process gas diffused to the substrate can be controlled, thereby making it easy to adjust the generation of hydroxyl groups (-OH) according to the region of the substrate.

The effects of this invention are not limited to those mentioned above. Those skilled in the art to which this invention pertains can clearly understand from the following description other effects not mentioned.

The following describes in detail preferred embodiments of the invention with reference to the accompanying drawings, but the invention is not limited or restricted by the embodiments.

In order to illustrate the present invention, its advantages in action, and the objectives achieved by implementing the present invention, the following are examples of preferred embodiments of the present invention and will be described accordingly.

First, the terms used in this application are for the purpose of illustrating specific embodiments only and are not intended to limit the invention. Singular expressions may include plural expressions unless the different meanings are clearly indicated in the context. Furthermore, in this application, terms such as "comprising" or "having" are used to refer to the presence of features, numbers, steps, actions, constituent elements, parts, or combinations thereof described in the specification. This should be understood as not pre-excluding the existence or additional possibility of one or more other features, numbers, steps, actions, constituent elements, parts, or combinations thereof.

In the description of this invention, detailed descriptions of relevant learned elements or functions are omitted if it is determined that such detailed descriptions may obscure the main points of this invention.

The present invention proposes the following substrate processing technology: in a substrate bonding process performed by hybrid bonding, when hydroxyl groups (-OH) are formed on the substrate surface by plasma treatment, the uniformity of hydroxyl groups (-OH) on the substrate surface is ensured.

Figure 1 illustrates the concept of hybrid bonding applicable to the present invention.

During plasma treatment, surface energy can be increased at the bonding surfaces of the silicon substrate to induce covalent bonds between the interfaces. If the hydrophobic properties of the silicon substrate surface are converted to hydrophilic properties through plasma treatment, hydroxyl groups (-OH) can be induced on the substrate surface.

After plasma treatment, a rinsing process can be performed on the substrate surface to activate the generation of hydroxyl groups (-OH) and clean impurities.

This process allows the two substrates, with their surfaces facing each other, to be bonded together via a dehydration reaction caused by the covalent bonds of oxygen (O). However, this covalent bonding exhibits weak adhesion. Therefore, a high-temperature heating process induced eutectic/TLP/diffusion/fusion bonding utilizes metal bonds formed through the thermal expansion of the metal wiring to achieve stronger adhesion.

In such wafer bonding processes, the uniformity of hydroxyl groups (-OH) on the substrate surface after plasma treatment is a critical issue.

Therefore, this invention proposes a method to ensure the uniformity of hydroxyl (-OH) groups on the substrate surface by controlling the plasma gas density during the plasma processing.

The invention will now be described in more detail by way of embodiments thereof.

Figure 2 illustrates an embodiment of the substrate bonding system according to the present invention.

The substrate bonding system 1 may include a substrate processing device 10, a cleaning device 50, an alignment device 60, and a substrate bonding device 70 disposed within the cleanroom 20. In addition, the substrate bonding system 1 may also include a wafer stage 30 disposed on one side of the cleanroom 20.

In an exemplary embodiment, the cleanroom 20 can be formed into a cuboid-shaped room with internal space, creating a space that cuts off micro-dust and impurities while maintaining a pre-set level of cleanliness.

The wafer cassette 30 provides space for storing wafers. A carrier (FOUP) C capable of holding multiple wafers can be supported on a support plate 32 of the wafer cassette 30. The wafers stored in the carrier C can be moved into the cleanroom 20 by a transfer robot 22.

Alignment device 60 can sense the positioning edge (or positioning groove) of wafer W to align wafer W. The wafer aligned by alignment device 60 can be moved by transfer robot 22 to substrate processing device 10, cleaning device 50 and substrate bonding device 70.

The cleaning apparatus 50 can clean the surface of a wafer substrate that has undergone plasma treatment by the substrate processing apparatus 10. The cleaning apparatus 50 can use a spin coater to apply deionized (DI) water to the surface of the wafer substrate. The DI water not only cleans the surface of the wafer substrate but also allows hydroxyl groups (-OH) to bind well to the surface of the wafer substrate, thereby making it easier to form hybrid bonds.

The substrate bonding device 70 may include a lower chuck structure and an upper chuck structure. Alternatively, the upper chuck structure may hold a first wafer, and the lower chuck structure may hold a second wafer.

Either or both of the upper and lower chuck structures can be raised and lowered to simultaneously pressurize and join the first and second wafers. As an example, push rods can be arranged in the upper and lower chuck structures, and the lifting and lowering of the push rods can form a bond between the first and second wafers from the center of the wafer substrate outwards. Alternatively, pressurizing components that expand by air or gas injection can be arranged in the upper and lower chuck structures, and the expansion of the pressurizing components can form a bond between the first and second wafers from the center of the wafer substrate outwards.

Furthermore, the substrate bonding system 1 may also include an annealing apparatus (not shown) for heat-treating the bonded wafer substrates. Additionally, the substrate bonding system 1 may also include a polishing apparatus (not shown) for polishing the surface of any one of the bonded wafer substrates.

The substrate processing apparatus 10 is observed with reference to an embodiment of the substrate processing apparatus according to the present invention shown in FIG3.

For ease of explanation, this embodiment divides the substrate into a central region and an edge region, but the substrate can also be divided into multiple regions as needed.

The substrate processing apparatus 10 may include a process chamber 100, a substrate support member 110 having a lower electrode, an upper power supply unit 130, a gas distribution member 200, a gas supply member 300, etc.

The substrate support structure 110 can support the wafer W within the process chamber 100. The substrate support structure 110 may include a substrate stage with a lower electrode for placing the wafer.

In an exemplary embodiment, the substrate processing apparatus 10 may be an apparatus that forms hydroxyl groups (-OH) on the surface of a substrate, such as a semiconductor wafer W, disposed within an induced coupled plasma (ICP) process chamber 100 by irradiating it with plasma. Here, the plasma generated by the substrate processing apparatus 10 is not limited to induced coupled plasma; for example, it may be capacitively coupled plasma or microwave plasma.

Process chamber 100 provides a closed processing space 120 for performing plasma processing on wafer W. Process chamber 100 may be a cylindrical vacuum chamber. Process chamber 100 may contain metals such as aluminum or stainless steel. Process chamber 100 may include a cover 102 covering the upper part of process chamber 100. Cover 102 can seal the upper part of process chamber 100.

A gate (not shown) for the entry and exit of wafer W can be provided on the side wall of the process chamber 100. Wafer W can be loaded and unloaded on the substrate stage of the substrate support member 110 through the gate.

Alternatively, an exhaust port 104 may be provided at the lower part of the process chamber 100, and an exhaust section 106 may be connected to the exhaust port 104 via an exhaust pipe. The exhaust section 106 may include a vacuum pump such as a turbine molecular pump to adjust the pressure of the processing space inside the process chamber 100 to the desired vacuum level. In addition, process byproducts and residual process gases generated in the process chamber 100 may be discharged through the exhaust port 104.

The upper electrode can be disposed on the upper outer side of the process chamber 100, opposite to the lower electrode. For example, the upper electrode can be disposed on the cover 102. Alternatively, the upper electrode can also be formed on the upper part of the process chamber 100.

The top electrode may include an RF antenna. The antenna may have a planar coil shape. The cover 102 may include a disc-shaped dielectric window. The dielectric window may contain a dielectric material. For example, the dielectric window may contain aluminum oxide ( _Al₂O₃ ). The dielectric window may have the function of transmitting power from the antenna into the interior of the process chamber ₁₀₀ .

For example, the upper electrode may include a spiral or concentric coil. This coil enables the generation of inductively coupled plasma in the plasma space of the process chamber 100. The number, arrangement, etc., of the coils can be appropriately varied as needed.

The upper power supply unit 130 can apply plasma source power to the upper electrode. For example, the upper power supply unit 130 may include a source RF power supply 133 and a source RF matching unit 135 as plasma source elements. The source RF power supply 133 can generate an RF signal. The source RF matching unit 135 can control the plasma generated by the antenna coil of the upper electrode by impedance matching the RF signal generated from the source RF power supply 133.

The lower power supply 140 can apply a bias source power to the lower electrode. For example, the lower power supply 140 can include a bias RF power supply 143 and a bias RF matching device 145 as bias elements. The lower electrode can pull plasma atoms or ions generated within the process chamber 100. The bias RF power supply 143 can generate an radio frequency (RF) signal. The bias RF matching device 145 can adjust the bias voltage and bias current of the lower electrode to match the impedance of the bias RF. The bias RF power supply 143 and the source RF power supply 133 can be synchronized or desynchronized with each other via a tuner in a control unit (not shown).

The control unit can be connected to the upper power supply unit 130 and the lower power supply unit 140 to control their operation. The control unit may include a microcomputer and various interfaces, and controls the operation of the plasma processing device according to program and method information stored in external or internal memory.

If a high-frequency electric force with a predetermined frequency is applied to the upper electrode, the electromagnetic field induced by the upper electrode can be applied to the plasma gas dispersed within the process chamber 100 to generate plasma. A bias electric force with a frequency lower than that of the plasma electric force can be applied to the lower electrode, and the plasma atoms or ions generated within the process chamber 100 will be pulled toward the lower electrode.

The gas distribution component 200 can be disposed in the upper space inside the process chamber 100 to divide the upper plasma space 150. As an example, the upper plasma space 150 can be formed above the gas distribution component 200, and the lower plasma space 160 can be formed above the substrate.

The gas distribution component 200 may include an upper shower panel 210 and a lower shower panel 250, and includes a gas diffusion space 230 disposed between the upper shower panel 210 and the lower shower panel 250.

It can be that a gas inlet hole is arranged in the upper shower plate 210 to allow the gas in the upper plasma space to flow into the diffusion space 230, and a gas outlet hole is arranged in the lower shower plate 250 to allow the gas in the diffusion space 230 to diffuse into the lower plasma space.

The number and configuration of the gas inlet holes of the upper shower panel 210 and the gas outlet holes of the lower shower panel 250 can be varied as needed.

The substrate processing apparatus 10 may include a gas supply component 300 for supplying plasma gas to the interior of the process chamber 100 via a gas distribution component 200.

The gas supply component 300 may include a process gas supply source 310, a control gas supply source 320, a carrier gas supply source 330, etc.

The gas supply component 300 may include a first central supply pipe 371 that supplies process gas and control gas to the central region of the substrate and a first edge supply pipe 375 that supplies gas to the edge region of the substrate.

In this embodiment, it is illustrated and explained that process gas and control gas are supplied through a first central supply pipe 371 and a first peripheral supply pipe 375, but the central supply pipe and peripheral supply pipe may also be provided separately for each of the process gas and control gas as needed.

As an example, the first central supply pipe 371 and the first peripheral supply pipe 375 can supply process gas and control gas to the central and peripheral regions of the plasma space 150 arranged above the gas distribution component 200.

Additionally, the gas supply component 300 may include a first flow controller 340 that regulates the supply of process gas corresponding to the center region of the substrate and the supply of process gas corresponding to the edge region of the substrate, and a second flow controller 350 that regulates the supply of control gas corresponding to the center region of the substrate and the supply of control gas corresponding to the edge region of the substrate. The flow rate controllers (FRCs) 340 and 350 may include mass flow controllers (MFCs).

Flow controllers 340 and 350 can adjust the supply ratio of process gas and control gas to the center and edge areas of the substrate.

The gas supply component 300 may include a second central supply pipe 381 that supplies carrier gas to the central region of the substrate and a second edge supply pipe 385 that supplies carrier gas to the edge region of the substrate.

As an example, the second central supply pipe 381 and the second peripheral supply pipe 385 can supply carrier gas to the central and peripheral areas of the gas diffusion space 230 disposed inside the gas distribution component 200.

In this regard, Figure 4 shows an embodiment of the gas distribution component of the substrate processing apparatus according to the present invention.

Figure 4 shows one side of the upper shower panel 210 of the gas distribution component 200.

Gas inlet holes 220 can be arranged in the upper shower plate 210 to allow gas in the upper plasma space 150 to flow into the gas diffusion space 230.

The gas inlet holes 220, which serve as holes penetrating the upper shower panel 210, can be arranged in multiple radial patterns.

Alternatively, a central gas flow path 382 corresponding to the central area of the gas diffusion space 230 can be arranged inside the upper shower panel 210. The central gas flow path 382 is connected to a second central supply pipe 381 to receive carrier gas. A central carrier gas discharge port 383 can be arranged in the central gas flow path 382 to discharge carrier gas into the central area of the gas diffusion space 230. The central carrier gas discharge port 383 can be open toward the gas diffusion space 230 to discharge the carrier gas in the central gas flow path 382 into the central area of the gas diffusion space 230.

Alternatively, an edge gas flow path 386 corresponding to the edge area of the gas diffusion space 230 can be arranged inside the upper shower panel 210. The edge gas flow path 386 is connected to a second edge supply pipe 385 to receive carrier gas. An edge carrier gas discharge hole 387 for discharging carrier gas into the edge area of the gas diffusion space 230 can be arranged in the edge gas flow path 386. The edge carrier gas discharge hole 387 can be open toward the gas diffusion space 230 to discharge the carrier gas in the edge gas flow path 386 into the edge area of the gas diffusion space 230.

Returning to Figure 3, we continue to observe the substrate processing apparatus 10 according to the present invention.

The gas supply component 300 may include a third flow controller 360 that regulates the supply of carrier gas corresponding to the central region of the substrate and the supply corresponding to the edge region of the substrate.

The third flow controller 360 can adjust the supply ratio of carrier gas to the center and edge areas of the substrate.

It may include a control component (not shown) that controls the first flow controller 340, the second flow controller 350, and the third flow controller 360 to regulate the supply amount of each of the process gas, control gas, and carrier gas corresponding to the central region of the substrate and the supply amount corresponding to the edge region of the substrate.

Process gas can be selected from gases such as _N2 and _O2 , depending on the characteristics of the substrate being plasma-treated. The process gas can perform the function of forming hydroxyl groups (-OH) on the substrate surface. In this invention, the process gas can be divided into a central region and an edge region of the substrate, and the supply can be distributed according to the adjustment of the supply amount for each region. A higher relative supply ratio between the central and edge regions of the substrate allows for a greater etching density.

The control gas, being a gas that does not react with the substrate, can include inert gases such as Ar. In this invention, the etching density in the upper plasma space can be adjusted by supplying the control gas together with the process gas into the upper plasma space. By dividing the substrate into central and peripheral regions and distributing the control gas supply according to the supply amount for each region, the relative etching density can be adjusted, thereby regulating the uniformity of hydroxyl groups (-OH) generated on the substrate surface.

The carrier gas performs the function of transporting the etchant, whose density has been adjusted in the upper plasma space, into the lower plasma space. The substrate is divided into central and peripheral regions, and the carrier gas supply is distributed according to the supply amount to each region, thereby allowing the density of the etchant transported by the carrier gas in the lower plasma space to be adjusted to be different in each of the central and peripheral regions of the substrate.

Furthermore, the speed at which the etching agent reaches the wafer substrate can be controlled by adjusting the supply of carrier gas.

Such a substrate processing apparatus according to the present invention can be applied to the substrate bonding system according to the present invention described above, and the uniformity of hydroxyl groups (-OH) generated on the substrate surface can be ensured by using the plasma treatment performed by the substrate processing apparatus proposed in the present invention.

Furthermore, the present invention proposes a substrate processing method for ensuring the uniformity of hydroxyl (-OH) formation on the substrate surface through the substrate processing apparatus according to the present invention as observed above.

According to one example of the substrate processing method of the present invention, the process gas is supplied to multiple regions of a plasma space corresponding to multiple regions of the substrate after adjusting the supply ratio, and the control gas is supplied to multiple regions of the plasma space after adjusting the supply ratio, thereby adjusting the process gas density of each of the multiple regions of the plasma space by means of the distribution and supply of the control gas.

Preferably, the supply ratio of the process gas can be adjusted and distributed according to multiple regions of the plasma space by a first flow controller that controls the supply flow rate of the process gas. Alternatively, the supply ratio of the control gas can be adjusted and distributed according to multiple regions of the plasma space by a second flow controller that controls the supply flow rate of the control gas.

Then, the process gas can be diffused downward into the plasma space by a gas distribution device, and hydroxyl groups (-OH) with adjusted uniformity can be generated on the surface of the substrate by the process gas with its density adjusted according to multiple regions of the substrate.

Furthermore, according to another example of the substrate processing method of the present invention, a carrier gas can be additionally supplied.

Observing another example of the substrate processing method according to the present invention, the process gas and control gas can be supplied to the upper plasma space after adjusting the supply ratio through the process described above, and the process gas density of each of the multiple regions of the upper plasma space can be adjusted.

Then, the process gas and control gas, with their densities adjusted according to the regions, flow into the gas diffusion space of the gas distribution component, and the carrier gas is distributed to multiple regions of the gas diffusion space corresponding to multiple regions of the substrate after adjusting the supply ratio.

Preferably, the supply ratio of the carrier gas can be adjusted and distributed according to multiple regions of the diffusion space by a third flow controller that controls the supply flow rate of the carrier gas.

This allows process gases, whose density is adjusted according to the region by supplying carrier gas, to diffuse into the lower plasma space. At this time, the speed of the process gas transported to multiple regions of the substrate in the lower plasma space can be adjusted according to the supply ratio of carrier gas supplied to multiple regions of the gas diffusion space.

The substrate processing method according to the present invention is illustrated by specific embodiments. In the following embodiments, for ease of explanation, multiple regions of the substrate are divided into a central region and an edge region of the substrate, but the regions of the substrate can be further refined by modifying the following embodiments as needed.

Figure 5 shows a flowchart of an embodiment of the substrate processing method according to the present invention.

The control components can adjust the supply ratio of process gas through the first flow controller and supply it to the central and peripheral areas of the upward plasma space (S110).

As an example, referring to Figure 7, process gas can be supplied to the first central supply pipe 371 and the first edge supply pipe 375 through the process gas supply source 310 of the gas supply component 300. At this time, the supply ratio of process gas supplied to the first central supply pipe 371 and the first edge supply pipe 375 is adjusted by the first flow controller 340.

Then, process gas P can flow into the plasma space 150 from the first central supply pipe 371 and the first edge supply pipe 375. The amount or proportion of process gas flowing into the central region UA-C and the edge region UA-E of the plasma space 150 can be adjusted by adjusting the supply ratio of process gas P from the first central supply pipe 371 and the first edge supply pipe 375.

It is possible that, after supplying process gas P or together with the supply of process gas P, the control component adjusts the supply ratio of control gas through a second flow controller and supplies it to the central and peripheral areas of the upward plasma space (S120).

The density of the etching agent used to process the substrate can be adjusted in the central and peripheral regions of the plasma space by controlling the gas supply (S130).

As an example, referring to Figure 8, control gas can be supplied to the first central supply pipe 371 and the first edge supply pipe 375 through the control gas supply source 320 of the gas supply component 300. At this time, the supply ratio of control gas to the first central supply pipe 371 and the first edge supply pipe 375 is adjusted by the second flow controller 350.

Then, control gas C can flow into the plasma space 150 from the first central supply pipe 371 and the first edge supply pipe 375. The density of process gas in the central region UA-C and the edge region UA-E of the plasma space 150 can be adjusted by adjusting the supply ratio of control gas C in the first central supply pipe 371 and the first edge supply pipe 375.

An etching agent with adjusted density in the central and edge regions of the upper plasma space can be supplied to the lower plasma space via a gas distribution device (S140), generating hydroxyl groups (-OH) on the substrate surface through plasma treatment (S150). At this time, the etching agent density in the central and edge regions of the substrate is adjusted during supply, thus regulating the degree of hydroxyl group (-OH) generation on the substrate surface, thereby ensuring the uniformity of the hydroxyl groups (-OH) generated on the substrate surface.

Furthermore, in this invention, the etching agent is precisely controlled by adding a carrier gas supply, thereby further improving the uniformity of hydroxyl groups (-OH) generated on the substrate surface. In this regard, Figure 6 shows a flowchart of another embodiment of the substrate processing method according to this invention.

Similar to the embodiments described above, the process gas can be supplied to the central and peripheral areas of the upper plasma space after adjusting the supply ratio (S210), or the control gas can be supplied to the central and peripheral areas of the upper plasma space after supplying the process gas or together with the process gas (S220).

The etching agent density in the central and peripheral regions of the plasma space can be adjusted by adjusting the supply ratio of process gas and carrier gas according to the region (S230).

Then, the process gas and carrier gas with their densities adjusted according to the region flow into the gas diffusion space of the gas distribution component, and the carrier gas is supplied to the central and peripheral regions of the gas diffusion space after adjusting the supply ratio (S240).

As shown in Figures 7 and 8, the gas density in the central region UA-C and the peripheral region UA-E of the plasma space 150 can be adjusted by adjusting the supply ratio of process gas P according to the region and adjusting the supply ratio of control gas C according to the region.

Referring to Figure 9 below, the gas diffusion space 230 of the gas distribution component 200 can be made to flow under the condition that the gas density in the central region UA-C and the edge region UA-E of the plasma space 150 is adjusted.

Then, referring to Figure 10, it is possible to supply carrier gas to the second central supply pipe 381 and the second edge supply pipe 385 through the carrier gas supply source 330 of the gas supply component 300. At this time, the supply ratio of carrier gas to the second central supply pipe 381 and the second edge supply pipe 385 is adjusted by the third flow controller 360.

Carrier gas CA can flow into the gas diffusion space 230 from the second central supply pipe 381 and the second edge supply pipe 385. The amount of carrier gas CA supplied in the central and edge regions of the gas diffusion space 230 can be adjusted by regulating the supply ratio of carrier gas CA supplied through the second central supply pipe 381 and the second edge supply pipe 385. Furthermore, the density of the etching agent in the central and edge regions of the gas diffusion space 230 can be further adjusted by regulating the supply of carrier gas CA according to the region.

The process gas with adjusted density in the gas diffusion space 230 can be diffused downward into the plasma space via the carrier gas (S250). That is, the density of the etching agent transported to the central and peripheral regions of the downward plasma can be adjusted by allowing the etching agent with regionally adjusted density to diffuse through the carrier gas.

In addition, the speed of the process gas transported to the central and peripheral areas of the downward plasma region can be adjusted by adjusting the supply of carrier gas.

Referring to Figure 11, the process gas P with regulated density in the central and peripheral regions of the gas diffusion space 230 can diffuse downwards into the plasma space 160 via the carrier gas CA.

The process gas P, with its density adjusted according to the region, is transported to the lower plasma space 160, thus allowing the density of the process gas P reaching the central region DA-C and the edge region DA-E of the lower plasma space 160 to be adjusted.

In addition, the speed of the process gas P reaching the lower plasma space 160 can be adjusted according to the region by adjusting the supply of the carrier gas CA that diffuses the process gas P.

When the process gas reaches the lower plasma region, hydroxyl groups (-OH) can be generated on the substrate surface through plasma treatment (S260). At this time, the process gas P, i.e., the etching agent, in the central region DA-C and the edge region DA-E of the lower plasma space 160 is supplied after adjusting the density, so the degree of hydroxyl group (-OH) generation on the substrate surface can be adjusted. Moreover, since the speed of the process gas P reaching the central region DA-C and the edge region DA-E of the lower plasma space 160 can be adjusted by adjusting the supply amount of carrier gas CA, the degree of hydroxyl group (-OH) generation on the substrate surface can be adjusted more precisely.

Based on the above observations, this invention ensures the uniformity of hydroxyl groups (-OH) generated on the substrate by adjusting the supply ratio of each of the process gas, control gas, and carrier gas between the substrate center and the substrate edge during plasma processing.

In particular, by controlling the density of the process gas according to the region in the plasma space, the process gas with the density adjusted according to the region in the gas diffusion space is transported to the downward plasma space via the carrier gas, thereby enabling precise adjustment of the generation of hydroxyl groups (-OH) according to the region of the substrate.

Furthermore, by adjusting the supply ratio of the carrier gas, the rate of process gas diffused to the substrate can be controlled, thereby making it easy to adjust the generation of hydroxyl groups (-OH) according to the region of the substrate.

The above description is merely illustrative of the technical concept of this invention. Those skilled in the art to which this invention pertains can make various modifications and variations without departing from the essential characteristics of this invention. Therefore, the embodiments described in this invention are for illustrating the technical concept of this invention and are not intended to limit it; the technical concept of this invention is not limited by such embodiments. The scope of protection of this invention should be interpreted in accordance with the appended patent claims, and should be interpreted as including all technical concepts within the equivalent scope within the scope of claims of this invention.

1: Substrate Bonding System 10: Substrate Processing Equipment 20: Cleanroom 22: Transfer Robot 30: Wafer Stage 32: Support Plate 50: Cleaning Equipment 60: Alignment Device 70: Substrate Bonding Equipment 100: Process Chamber 102: Cover 104: Exhaust Port 106: Exhaust Unit 110: Substrate Support Component 120: Processing Space 130: Upper Power Supply Unit 133: Source RF Power Supply 135: Source RF Matching Unit 140: Lower Power Supply Unit 143: Bias RF Power Supply 145: Bias RF Matching Unit 150: Upper Plasma Space 160: Lower Plasma Space 200: Gas Distribution Component 210: Upper Shower Panel 220: Gas Inlet 230: Gas Diffusion Space 250: Lower Shower Panel 300: Gas Supply Component 310: Process Gas Supply Source 320: Control Gas Supply Source 330: Carrier Gas Supply Source 340: First Flow Controller 350: Second Flow Controller 360: Third Flow Controller 371: First Central Supply Pipe 375: First Edge Supply Pipe 381: Second Central Supply Pipe 382: Central Gas Flow Path 383: Central Carrier Gas Discharge Hole 385: Second Edge Supply Pipe 386: Edge Gas Flow Path 387: Edge Carrier Gas Discharge Hole DA-C: Central Area DA-E: Edge Area C: Carrier CA: Carrier Gas P: Process Gas S110, S120, S130, S140, S150: Steps S210, S220, S230, S240, S250, S260: Steps UA-C: Center Area UA-E: Edge Area W: Wafer

Figure 1 illustrates the concept of hybrid bonding applicable to the present invention.

Figure 2 illustrates an embodiment of the substrate bonding system according to the present invention.

Figure 3 illustrates an embodiment of the substrate processing apparatus according to the present invention.

Figure 4 shows an embodiment of a gas distribution component of a substrate processing apparatus according to the present invention.

Figure 5 shows a flowchart of an embodiment of the substrate processing method according to the present invention.

Figure 6 shows a flowchart of another embodiment of the substrate processing method according to the present invention.

Figures 7 to 11 illustrate the working process of another embodiment of the substrate processing method according to the present invention.

S110, S120, S130, S140, S150: Steps

Claims (17)

A substrate processing apparatus includes: a process chamber providing a processing space in which a plasma processing for generating hydroxyl groups on a substrate surface is formed; a gas distribution structure disposed above the processing space of the process chamber to divide the plasma space and to arrange a gas diffusion space therein; a substrate support structure disposed in the processing space to support the substrate; and a gas supply structure supplying a plurality of gases to the processing space. The plurality of gases includes process gases and control gases, wherein the control gases are non-reactive gases on the substrate, and the process gases and the control gases are supplied to the plasma application space; and a control component divides the substrate, which is placed in the substrate support component, into multiple regions, and independently controls the flow rate of the plurality of gases supplied to each region, thereby adjusting the supply amount of the control gases according to the regions of the substrate. The density of the process gas in each of the plurality of regions is adjusted, and the process gas and the control gas in the plasma space are output to the gas diffusion space. The plurality of gases also include a carrier gas. The gas supply component includes: a carrier gas supply source for supplying the carrier gas; and a third flow controller for distributing the carrier gas to the plurality of regions of the gas diffusion space corresponding to the plurality of regions of the substrate by adjusting the supply ratio of the carrier gas. The carrier gas is supplied to the gas diffusion space to adjust the density of the process gas output from the plasma space. The control component adjusts the rate of the process gas supplied to each of the plurality of regions of the substrate and the density of the etching agent formed by the process gas according to the region control supply ratio by the third flow controller, thereby adjusting the uniformity of the hydroxyl group generated on the substrate surface. The substrate processing apparatus as claimed in claim 1, wherein: the gas distribution component causes a plurality of gases supplied by the gas supply component to diffuse toward the substrate placed in the substrate support component. The substrate processing apparatus of claim 2, wherein the gas supply component comprises: a process gas supply source for supplying process gas; a control gas supply source for supplying control gas; a first flow controller for distributing the process gas to multiple regions of the plasma space corresponding to multiple regions of the substrate by adjusting the supply ratio of the process gas; and a second flow controller for distributing the control gas to multiple regions of the plasma space corresponding to multiple regions of the substrate by adjusting the supply ratio of the control gas, wherein the control component adjusts the density of the process gas in each of the multiple regions of the plasma space according to the region control supply ratio by means of the first flow controller and the second flow controller. The substrate processing apparatus of claim 1, wherein the control component regulates the rate of process gas supplied to multiple regions of the substrate by means of the third flow controller according to the regional control supply amount. The substrate processing apparatus of claim 2, wherein the gas distribution component includes: an upper shower plate for receiving gas flowing into the upper plasma space; a gas diffusion space formed below the upper shower plate; and a lower shower plate for diffusing gas in the diffusion space into the processing space. The substrate processing apparatus of claim 5, wherein the upper shower plate is provided with multiple gas flow paths for discharging carrier gas to each of multiple regions of the gas diffusion space corresponding to multiple regions of the substrate. The substrate processing apparatus of claim 5, wherein the upper shower plate is provided with: a central gas flow path for discharging carrier gas to the central region of the gas diffusion space; and an edge gas flow path for discharging carrier gas to the edge region of the gas diffusion space. The substrate processing apparatus of claim 3, wherein the gas supply component includes: a first supply pipe for supplying process gas and control gas to each of the plurality of regions of the plasma space. The substrate processing apparatus of claim 3, wherein the gas supply component comprises: a first central supply pipe for supplying process gas and control gas to the central region of the plasma space; and a first edge supply pipe for supplying process gas and control gas to the edge region of the plasma space. The substrate processing apparatus of claim 1, wherein the gas supply component includes: a second supply pipe for supplying carrier gas to each of a plurality of regions of the gas diffusion space. The substrate processing apparatus of claim 10, wherein the gas supply component includes: a second central supply pipe for supplying carrier gas to a central region of the gas diffusion space; and a second edge supply pipe for supplying carrier gas to an edge region of the gas diffusion space. A substrate bonding system includes: a substrate processing apparatus as described in claim 1, which generates hydroxyl groups on a substrate surface by plasma processing; a cleaning apparatus, which cleans the plasma-processed substrate surface; a substrate bonding apparatus, which bonds the substrate with hydroxyl groups formed on its surface; and an alignment apparatus, which transfers the substrate to the substrate processing apparatus, the cleaning apparatus, and the substrate bonding apparatus. A substrate processing method includes: a process gas supply step, which distributes process gas to multiple regions of a plasma space corresponding to multiple regions of the substrate by adjusting the supply ratio; a control gas supply step, which distributes control gas to multiple regions of the plasma space by adjusting the supply ratio, wherein the control gas is a gas that does not react with the substrate; a plasma space gas density adjustment step, which adjusts the process gas density of each of the multiple regions of the plasma space by distributing and supplying the control gas; a gas diffusion space inflow step, which causes the density-adjusted process gas to flow into the gas diffusion space of a gas distribution component; and a carrier gas supply step, which distributes process gas to multiple regions of the substrate by adjusting the supply ratio of process gas to multiple regions of the substrate. The gas diffusion space distributes the carrier gas by adjusting the supply ratio in multiple regions. The carrier gas is supplied to the gas diffusion space to adjust the density of the process gas output from the upper plasma space. The carrier gas is controlled according to the region-controlled supply ratio to adjust the rate of the process gas supplied to each of the multiple regions of the substrate and the density of the etching agent formed by the process gas. The process gas diffusion step diffuses the process gas with density adjusted by the carrier gas from the gas diffusion space to the multiple regions of the substrate in the lower plasma space through the gas distribution device. The hydroxyl generation step generates a hydroxyl group with adjusted uniformity on the substrate surface by the process gas with density adjusted according to the multiple regions of the substrate. The substrate processing method of claim 13, wherein the process gas supply step is performed by distributing the process gas supply according to the supply ratio of multiple regions of the plasma space by a first flow controller that controls the supply flow rate of the process gas. The substrate processing method of claim 13, wherein the control gas supply step is performed by distributing the control gas supply according to the supply ratio of multiple regions of the plasma space by using a second flow controller that controls the supply flow rate of the control gas. The substrate processing method of claim 13, wherein the carrier gas supply step is performed by distributing the carrier gas supply according to the supply ratio of multiple regions of the diffusion space by a third flow controller that controls the supply flow rate of the carrier gas. A substrate processing method includes: a process gas supply step, wherein process gas is supplied to the center and edge regions of a plasma application space corresponding to the center and edge regions of the substrate by adjusting the supply ratio; and a control gas supply step, wherein control gas is supplied to the center and edge regions of the plasma application space by adjusting the supply ratio, wherein the control gas acts as a non-reflective gas on the substrate. The process involves: a gas supply step; a plasma filling space gas density adjustment step, which adjusts the process gas density in the central and peripheral regions of the plasma filling space by distributing and supplying the control gas; a gas diffusion space inflow step, which allows the density-adjusted process gas to flow into the gas diffusion space of the gas distribution component; and a carrier gas supply step, which supplies the carrier gas to the center of the gas diffusion space corresponding to the central and peripheral regions of the substrate. The carrier gas is supplied to the central and edge regions of the gas diffusion space according to the supply ratio of the carrier gas to the central and edge regions of the gas diffusion space to adjust the density of the process gas output from the plasma space. The carrier gas is supplied at a controlled rate to adjust the speed of the process gas supplied to the central and edge regions of the substrate according to the regional control supply ratio. The density of the etching agent in gas formation; a process gas diffusion step, in which process gas with density adjusted by a carrier gas diffuses from the gas diffusion space into the central and peripheral regions of the substrate in the plasma space via the gas distribution device; and a hydroxyl generation step, in which hydroxyl groups with adjusted density are generated on the surface of the substrate by process gas with adjusted density in the central and peripheral regions of the substrate.