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TWI879622B - Power supply device for suppressing electromagnetic interference - Google Patents

Power supply device for suppressing electromagnetic interference Download PDF

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TWI879622B
TWI879622B TW113124791A TW113124791A TWI879622B TW I879622 B TWI879622 B TW I879622B TW 113124791 A TW113124791 A TW 113124791A TW 113124791 A TW113124791 A TW 113124791A TW I879622 B TWI879622 B TW I879622B
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potential
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transistor
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TW202604113A (en
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詹子增
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宏碁股份有限公司
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Abstract

A power supply device for suppressing EMI (Electromagnetic Interference) includes a switch circuit, a transformer, a first resonant capacitor, an output stage circuit, a tunable capacitive element, a feedback compensation circuit, and a detection and control circuit. The output stage circuit generates an output voltage. The feedback compensation circuit generates a feedback voltage according to an input voltage. The detection and control circuit includes an NTC (Negative Temperature Coefficient) resistor disposed adjacent to the first resonant capacitor. The NTC resistor provides a temperature dependent voltage. The detection and control circuit selectively enables or disables the tunable capacitive element according to the output voltage, the feedback voltage, and the temperature dependent voltage.

Description

抑制電磁干擾之電源供應器Power supply for suppressing electromagnetic interference

本發明係關於一種電源供應器,特別係關於一種可抑制電磁干擾之電源供應器。The present invention relates to a power supply, and more particularly to a power supply capable of suppressing electromagnetic interference.

電源供應器為筆記型電腦領域中不可或缺之元件。然而,若電源供應器之電磁干擾(Electromagnetic Interference,EMI)太過嚴重,則很容易造成相關筆記型電腦之整體操作性能下滑。有鑑於此,勢必要提出一種全新之解決方案,以克服先前技術所面臨之困境。Power supplies are indispensable components in the field of laptop computers. However, if the electromagnetic interference (EMI) of the power supply is too severe, it is easy to cause the overall operating performance of the related laptop to decline. In view of this, it is necessary to propose a new solution to overcome the difficulties faced by previous technologies.

在較佳實施例中,本發明提出一種抑制電磁干擾之電源供應器,包括:一切換電路,根據一輸入電位、一第一驅動電位,以及一第二驅動電位來產生一切換電位;一變壓器,包括一主線圈、一第一副線圈,以及一第二副線圈,其中該變壓器內建一漏電感器和一激磁電感器,而該主線圈係經由該漏電感器接收該切換電位;一第一諧振電容器,耦接至該激磁電感器;一輸出級電路,耦接至該第一副線圈和該第二副線圈,並產生一輸出電位;一可調電容元件,耦接至該激磁電感器;一回授補償電路,根據該輸入電位來產生一回授電位;以及一偵測及控制電路,產生該第一驅動電位和該第二驅動電位,並包括鄰近於該第一諧振電容器之一負溫度係數電阻器,其中該負溫度係數電阻器提供一溫度相依電位;其中該偵測及控制電路係根據該輸出電位、該回授電位,以及該溫度相依電位來選擇性地致能或禁能該可調電容元件。In a preferred embodiment, the present invention provides a power supply for suppressing electromagnetic interference, comprising: a switching circuit, which generates a switching potential according to an input potential, a first driving potential, and a second driving potential; a transformer, which comprises a main coil, a first secondary coil, and a second secondary coil, wherein the transformer has a built-in leakage inductor and an excitation inductor, and the main coil receives the switching potential through the leakage inductor; a first resonant capacitor, which is coupled to the excitation inductor; an output stage circuit, which is coupled to the first secondary coil and the second secondary coil. A coil and generates an output potential; an adjustable capacitance element coupled to the excitation inductor; a feedback compensation circuit that generates a feedback potential according to the input potential; and a detection and control circuit that generates the first drive potential and the second drive potential and includes a negative temperature coefficient resistor adjacent to the first resonant capacitor, wherein the negative temperature coefficient resistor provides a temperature-dependent potential; wherein the detection and control circuit selectively enables or disables the adjustable capacitance element according to the output potential, the feedback potential, and the temperature-dependent potential.

在一些實施例中,該切換電路包括:一第一電晶體,具有一控制端、一第一端,以及一第二端,其中該第一電晶體之該控制端係用於接收該第一驅動電位,該第一電晶體之該第一端係耦接至一第一節點以輸出該切換電位,而該第一電晶體之該第二端係耦接至一輸入節點以接收該輸入電位;以及一第二電晶體,具有一控制端、一第一端,以及一第二端,其中該第二電晶體之該控制端係用於接收該第二驅動電位,該第二電晶體之該第一端係耦接至一接地電位,而該第二電晶體之該第二端係耦接至該第一節點。In some embodiments, the switching circuit includes: a first transistor having a control end, a first end, and a second end, wherein the control end of the first transistor is used to receive the first driving potential, the first end of the first transistor is coupled to a first node to output the switching potential, and the second end of the first transistor is coupled to an input node to receive the input potential; and a second transistor having a control end, a first end, and a second end, wherein the control end of the second transistor is used to receive the second driving potential, the first end of the second transistor is coupled to a ground potential, and the second end of the second transistor is coupled to the first node.

在一些實施例中,該漏電感器具有一第一端和一第二端,該漏電感器之該第一端係耦接至該第一節點以接收該切換電位,該漏電感器之該第二端係耦接至一第二節點,該主線圈具有一第一端和一第二端,該主線圈之該第一端係耦接至該第二節點,該主線圈之該第二端係耦接至一第三節點,該激磁電感器具有一第一端和一第二端,該激磁電感器之該第一端係耦接至該第二節點,該激磁電感器之該第二端係耦接至該第三節點,該第一諧振電容器具有一第一端和一第二端,該第一諧振電容器之該第一端係耦接至該第三節點,該第一諧振電容器之該第二端係耦接至該接地電位,該第一副線圈具有一第一端和一第二端,該第一副線圈之該第一端係耦接至一第四節點,該第一副線圈之該第二端係耦接至一共同節點,該第二副線圈具有一第一端和一第二端,該第二副線圈之該第一端係耦接至該共同節點,而該第二副線圈之該第二端係耦接至一第五節點。In some embodiments, the leakage inductor has a first end and a second end, the first end of the leakage inductor is coupled to the first node to receive the switching potential, the second end of the leakage inductor is coupled to a second node, the main coil has a first end and a second end, the first end of the main coil is coupled to the second node, the second end of the main coil is coupled to a third node, the excitation inductor has a first end and a second end, the first end of the excitation inductor is coupled to the second node, the second end of the excitation inductor is coupled to the third node, The first resonant capacitor has a first end and a second end, the first end of the first resonant capacitor is coupled to the third node, and the second end of the first resonant capacitor is coupled to the ground potential. The first secondary coil has a first end and a second end, the first end of the first secondary coil is coupled to a fourth node, and the second end of the first secondary coil is coupled to a common node. The second secondary coil has a first end and a second end, the first end of the second secondary coil is coupled to the common node, and the second end of the second secondary coil is coupled to a fifth node.

在一些實施例中,該輸出級電路包括:一第一二極體,具有一陽極和一陰極,其中該第一二極體之該陽極係耦接至該第四節點,而該第一二極體之該陰極係耦接至一輸出節點以輸出該輸出電位;一第二二極體,具有一陽極和一陰極,其中該第二二極體之該陽極係耦接至該第五節點,而該第二二極體之該陰極係耦接至該輸出節點;以及一第一電容器,具有一第一端和一第二端,其中該第一電容器之該第一端係耦接至該輸出節點,而該第一電容器之該第二端係耦接至該共同節點。In some embodiments, the output stage circuit includes: a first diode having an anode and a cathode, wherein the anode of the first diode is coupled to the fourth node, and the cathode of the first diode is coupled to an output node to output the output potential; a second diode having an anode and a cathode, wherein the anode of the second diode is coupled to the fifth node, and the cathode of the second diode is coupled to the output node; and a first capacitor having a first end and a second end, wherein the first end of the first capacitor is coupled to the output node, and the second end of the first capacitor is coupled to the common node.

在一些實施例中,該可調電容元件包括:一第三電晶體,具有一控制端、一第一端,以及一第二端,其中該第三電晶體之該控制端係用於接收一放大電位,該第三電晶體之該第一端係耦接至該接地電位,而該第三電晶體之該第二端係耦接至一第六節點;一第四電晶體,具有一控制端、一第一端,以及一第二端,其中該第四電晶體之該控制端係用於接收一控制電位,該第四電晶體之該第一端係耦接至該第六節點,而該第四電晶體之該第二端係耦接至一第七節點;一第五電晶體,具有一控制端、一第一端,以及一第二端,其中該第五電晶體之該控制端係用於接收該輸出電位,該第五電晶體之該第一端係耦接至該第七節點,而該第五電晶體之該第二端係耦接至一第八節點;以及一第二諧振電容器,具有一第一端和一第二端,其中該第二諧振電容器之該第一端係耦接至該第三節點,而該第二諧振電容器之該第二端係耦接至該第八節點。In some embodiments, the adjustable capacitance element includes: a third transistor having a control terminal, a first terminal, and a second terminal, wherein the control terminal of the third transistor is used to receive an amplified potential, the first terminal of the third transistor is coupled to the ground potential, and the second terminal of the third transistor is coupled to a sixth node; a fourth transistor having a control terminal, a first terminal, and a second terminal, wherein the control terminal of the fourth transistor is used to receive a control potential, the first terminal of the fourth transistor is coupled to the sixth node, and the The second end of the fourth transistor is coupled to a seventh node; a fifth transistor having a control end, a first end, and a second end, wherein the control end of the fifth transistor is used to receive the output potential, the first end of the fifth transistor is coupled to the seventh node, and the second end of the fifth transistor is coupled to an eighth node; and a second resonant capacitor having a first end and a second end, wherein the first end of the second resonant capacitor is coupled to the third node, and the second end of the second resonant capacitor is coupled to the eighth node.

在一些實施例中,該回授補償電路包括:一第一電阻器,具有一第一端和一第二端,其中該第一電阻器之該第一端係耦接至該輸入節點以接收該輸入電位,而該第一電阻器之該第二端係耦接至一第九節點;一第二電阻器,具有一第一端和一第二端,其中該第二電阻器之該第一端係耦接至該第九節點,而該第二電阻器之該第二端係耦接至該接地電位;一線性光耦合器,包括一發光二極體和一雙載子接面電晶體,其中該發光二極體具有一陽極和一陰極,該發光二極體之該陽極係耦接至該第九節點,該發光二極體之該陰極係耦接至該接地電位,該雙載子接面電晶體具有一集極和一射極,該雙載子接面電晶體之該集極係用於輸出該回授電位,而該雙載子接面電晶體之該射極係耦接至一第十節點;以及一第二電容器,具有一第一端和一第二端,其中該第二電容器之該第一端係耦接至該第十節點,而該第二電容器之該第二端係耦接至該共同節點。In some embodiments, the feedback compensation circuit includes: a first resistor having a first end and a second end, wherein the first end of the first resistor is coupled to the input node to receive the input potential, and the second end of the first resistor is coupled to a ninth node; a second resistor having a first end and a second end, wherein the first end of the second resistor is coupled to the ninth node, and the second end of the second resistor is coupled to the ground potential; a linear optical coupler including a light emitting diode and a bipolar junction transistor, wherein the light emitting diode The diode has an anode and a cathode, the anode of the light-emitting diode is coupled to the ninth node, the cathode of the light-emitting diode is coupled to the ground potential, the bipolar junction transistor has a collector and an emitter, the collector of the bipolar junction transistor is used to output the feedback potential, and the emitter of the bipolar junction transistor is coupled to a tenth node; and a second capacitor has a first end and a second end, wherein the first end of the second capacitor is coupled to the tenth node, and the second end of the second capacitor is coupled to the common node.

在一些實施例中,該偵測及控制電路更包括:一放大器,將該回授電位放大一增益倍率,以產生該放大電位;以及一及閘,具有一第一輸入端、一第二輸入端,以及一輸出端,其中該及閘之該第一輸入端係用於接收該放大電位,該及閘之該第二輸入端係用於接收該輸出電位,而該及閘之該輸出端係用於輸出一邏輯電位。In some embodiments, the detection and control circuit further includes: an amplifier that amplifies the feedback potential by a gain factor to generate the amplified potential; and an AND gate having a first input terminal, a second input terminal, and an output terminal, wherein the first input terminal of the AND gate is used to receive the amplified potential, the second input terminal of the AND gate is used to receive the output potential, and the output terminal of the AND gate is used to output a logic potential.

在一些實施例中,該偵測及控制電路更包括:一微控制器,產生該第一驅動電位和該第二驅動電位,並輸出一固定電流,其中該固定電流係流經該負溫度係數電阻器;其中該負溫度係數電阻器具有一第一端和一第二端,該負溫度係數電阻器之該第一端係耦接至該共同節點,而該負溫度係數電阻器之該第二端係用於輸出該溫度相依電位至該微控制器。In some embodiments, the detection and control circuit further includes: a microcontroller, which generates the first driving potential and the second driving potential, and outputs a fixed current, wherein the fixed current flows through the negative temperature coefficient resistor; wherein the negative temperature coefficient resistor has a first end and a second end, the first end of the negative temperature coefficient resistor is coupled to the common node, and the second end of the negative temperature coefficient resistor is used to output the temperature-dependent potential to the microcontroller.

在一些實施例中,若該溫度相依電位低於或等於一參考電位,則該微控制器將輸出具有高邏輯位準之該控制電位,而若該溫度相依電位高於該參考電位,則該微控制器將輸出具有低邏輯位準之該控制電位。In some embodiments, if the temperature-dependent potential is lower than or equal to a reference potential, the microcontroller will output the control potential with a high logic level, and if the temperature-dependent potential is higher than the reference potential, the microcontroller will output the control potential with a low logic level.

在一些實施例中,該負溫度係數電阻器與該第一諧振電容器之間距係小於或等於3mm。In some embodiments, the distance between the negative temperature coefficient resistor and the first resonant capacitor is less than or equal to 3 mm.

為讓本發明之目的、特徵和優點能更明顯易懂,下文特舉出本發明之具體實施例,並配合所附圖式,作詳細說明如下。In order to make the purpose, features and advantages of the present invention more clearly understood, specific embodiments of the present invention are specifically listed below and described in detail with reference to the accompanying drawings.

在說明書及申請專利範圍當中使用了某些詞彙來指稱特定的元件。本領域技術人員應可理解,硬體製造商可能會用不同的名詞來稱呼同一個元件。本說明書及申請專利範圍並不以名稱的差異來作為區分元件的方式,而是以元件在功能上的差異來作為區分的準則。在通篇說明書及申請專利範圍當中所提及的「包含」及「包括」一詞為開放式的用語,故應解釋成「包含但不僅限定於」。「大致」一詞則是指在可接受的誤差範圍內,本領域技術人員能夠在一定誤差範圍內解決所述技術問題,達到所述基本之技術效果。此外,「耦接」一詞在本說明書中包含任何直接及間接的電性連接手段。因此,若文中描述一第一裝置耦接至一第二裝置,則代表該第一裝置可直接電性連接至該第二裝置,或經由其它裝置或連接手段而間接地電性連接至該第二裝置。Certain terms are used in the specification and patent application to refer to specific components. Those skilled in the art should understand that hardware manufacturers may use different terms to refer to the same component. This specification and patent application do not use differences in names as a way to distinguish components, but use differences in the functions of components as the criterion for distinction. The words "include" and "including" mentioned throughout the specification and patent application are open terms and should be interpreted as "including but not limited to". The word "substantially" means that within an acceptable error range, those skilled in the art can solve the technical problem within a certain error range and achieve the basic technical effect. In addition, the word "coupled" in this specification includes any direct and indirect electrical connection means. Therefore, if a first device is described herein as being coupled to a second device, it means that the first device may be directly electrically connected to the second device, or may be indirectly electrically connected to the second device via other devices or connection means.

第1圖係顯示根據本發明一實施例所述之電源供應器100之示意圖。例如,電源供應器100可應用於桌上型電腦、筆記型電腦,或一體成形電腦。如第1圖所示,電源供應器100包括:一切換電路110、一變壓器120、一第一諧振電容器CR1、一輸出級電路130、一可調電容元件140、一回授補償電路150,以及一偵測及控制電路160。必須注意的是,雖然未顯示於第1圖中,但電源供應器100更可包括其他元件,例如:一穩壓器或(且)一負回授電路。FIG. 1 is a schematic diagram showing a power supply 100 according to an embodiment of the present invention. For example, the power supply 100 can be applied to a desktop computer, a laptop computer, or an all-in-one computer. As shown in FIG. 1, the power supply 100 includes: a switching circuit 110, a transformer 120, a first resonant capacitor CR1, an output stage circuit 130, an adjustable capacitance element 140, a feedback compensation circuit 150, and a detection and control circuit 160. It should be noted that, although not shown in FIG. 1, the power supply 100 may further include other components, such as: a voltage regulator or (and) a negative feedback circuit.

切換電路110可根據一輸入電位VIN、一第一驅動電位VG1,以及一第二驅動電位VG2來產生一切換電位VW。例如,輸入電位VIN可為一直流電位,其電位位準可介於360V至440V之間,但亦不僅限於此。變壓器120包括一主線圈121、一第一副線圈122,以及一第二副線圈123。變壓器120更可內建一漏電感器LR和一激磁電感器LM,其中漏電感器LR、激磁電感器LM,以及主線圈121皆可位於變壓器120之同一側,而第一副線圈122和第二副線圈123則皆可位於變壓器120之相對另一側。主線圈121可經由漏電感器LR接收切換電位VW,而第一副線圈122和第二副線圈123則可回應於切換電位VW來進行操作。第一諧振電容器CR1係耦接至激磁電感器LM。例如,漏電感器LR、激磁電感器LM,以及第一諧振電容器CR1三者可共同形成電源供應器100之一諧振槽(Resonant Tank)。The switching circuit 110 can generate a switching potential VW according to an input potential VIN, a first drive potential VG1, and a second drive potential VG2. For example, the input potential VIN can be a DC potential, and its potential level can be between 360V and 440V, but it is not limited to this. The transformer 120 includes a main coil 121, a first sub-coil 122, and a second sub-coil 123. The transformer 120 can further have a built-in leakage inductor LR and an excitation inductor LM, wherein the leakage inductor LR, the excitation inductor LM, and the main coil 121 can all be located on the same side of the transformer 120, and the first sub-coil 122 and the second sub-coil 123 can all be located on the opposite side of the transformer 120. The main coil 121 can receive the switching potential VW via the leakage inductor LR, and the first sub-coil 122 and the second sub-coil 123 can operate in response to the switching potential VW. The first resonant capacitor CR1 is coupled to the magnetizing inductor LM. For example, the leakage inductor LR, the magnetizing inductor LM, and the first resonant capacitor CR1 can together form a resonant tank of the power supply 100.

輸出級電路130係耦接至第一副線圈122和第二副線圈123,並可產生一輸出電位VOUT。例如,輸出電位VOUT可為一直流電位,其電位位準可介於18V至22V之間,但亦不僅限於此。可調電容元件140係耦接至激磁電感器LM。回授補償電路150可根據輸入電位VIN來產生一回授電位VF。偵測及控制電路160可產生第一驅動電位VG1和第二驅動電位VG2,並包括鄰近於第一諧振電容器CR1之一負溫度係數(Negative Temperature Coefficient,NTC)電阻器RN,其中負溫度係數電阻器RN可提供一溫度相依電位VT。另外,偵測及控制電路160還可根據輸出電位VOUT、回授電位VF,以及溫度相依電位VT來選擇性地致能(Enable)或禁能(Disable)可調電容元件140。根據實際量測結果,可調電容元件140之加入有助於微調電源供應器100之品質因數(Quality Factor),是以電源供應器100相關之電磁干擾(Electromagnetic Interference,EMI)將能夠大幅度降低。必須注意的是,本說明書中所謂「鄰近」或「相鄰」一詞可指對應之二元件間距小於一既定距離(例如:5mm或更短),但通常不包括對應之二元件彼此直接接觸之情況(亦即,前述間距縮短至0)。The output stage circuit 130 is coupled to the first sub-coil 122 and the second sub-coil 123, and can generate an output potential VOUT. For example, the output potential VOUT can be a DC potential, and its potential level can be between 18V and 22V, but is not limited thereto. The adjustable capacitance element 140 is coupled to the excitation inductor LM. The feedback compensation circuit 150 can generate a feedback potential VF according to the input potential VIN. The detection and control circuit 160 can generate a first driving potential VG1 and a second driving potential VG2, and includes a negative temperature coefficient (NTC) resistor RN adjacent to the first resonant capacitor CR1, wherein the negative temperature coefficient resistor RN can provide a temperature-dependent potential VT. In addition, the detection and control circuit 160 can also selectively enable or disable the adjustable capacitor element 140 according to the output potential VOUT, the feedback potential VF, and the temperature-dependent potential VT. According to actual measurement results, the addition of the adjustable capacitor element 140 helps to fine-tune the quality factor of the power supply 100, so that the electromagnetic interference (EMI) related to the power supply 100 can be greatly reduced. It must be noted that the term "adjacent" or "adjacent" in this specification may refer to the distance between the two corresponding elements being less than a predetermined distance (for example: 5mm or shorter), but usually does not include the situation where the two corresponding elements are directly in contact with each other (that is, the aforementioned distance is shortened to 0).

以下實施例將介紹電源供應器100之詳細結構及操作方式。必須理解的是,這些圖式和敘述僅為舉例,而非用於限制本發明之範圍。The following embodiments will introduce the detailed structure and operation of the power supply 100. It must be understood that these drawings and descriptions are only examples and are not intended to limit the scope of the present invention.

第2圖係顯示根據本發明一實施例所述之電源供應器200之電路圖。在第2圖之實施例中,在第2圖之實施例中,電源供應器200具有一輸入節點NIN和一輸出節點NOUT,並包括:一切換電路210、一變壓器220、一第一諧振電容器CR1、一輸出級電路230、一可調電容元件240、一回授補償電路250,以及一偵測及控制電路260。電源供應器200之輸入節點NIN可由一升壓轉換器處(未顯示)接收一輸入電位VIN,而電源供應器200之輸出節點NOUT則可用於輸出一輸出電位VOUT至一外部裝置,例如:一筆記型電腦(未顯示)。FIG. 2 is a circuit diagram of a power supply 200 according to an embodiment of the present invention. In the embodiment of FIG. 2, the power supply 200 has an input node NIN and an output node NOUT, and includes: a switching circuit 210, a transformer 220, a first resonant capacitor CR1, an output stage circuit 230, an adjustable capacitance element 240, a feedback compensation circuit 250, and a detection and control circuit 260. The input node NIN of the power supply 200 can receive an input potential VIN from a boost converter (not shown), and the output node NOUT of the power supply 200 can be used to output an output potential VOUT to an external device, such as a laptop (not shown).

切換電路210包括一第一電晶體M1和一第二電晶體M2。例如,第一電晶體M1和第二電晶體M2可各自為一N型金氧半場效電晶體。第一電晶體M1具有一控制端(例如:一閘極)、一第一端(例如:一源極),以及一第二端(例如:一汲極),其中第一電晶體M1之控制端係用於接收一第一驅動電位VG1,第一電晶體M1之第一端係耦接至一第一節點N1以輸出一切換電位VW,而第一電晶體M1之第二端係耦接至輸入節點NIN。第二電晶體M2具有一控制端(例如:一閘極)、一第一端(例如:一源極),以及一第二端(例如:一汲極),其中第二電晶體M2之控制端係用於接收一第二驅動電位VG2,第二電晶體M2之第一端係耦接至一接地電位VSS(例如:0V),而第二電晶體M2之第二端係耦接至第一節點N1。The switching circuit 210 includes a first transistor M1 and a second transistor M2. For example, the first transistor M1 and the second transistor M2 may each be an N-type metal oxide semi-conductor field effect transistor. The first transistor M1 has a control end (e.g., a gate), a first end (e.g., a source), and a second end (e.g., a drain), wherein the control end of the first transistor M1 is used to receive a first driving potential VG1, the first end of the first transistor M1 is coupled to a first node N1 to output a switching potential VW, and the second end of the first transistor M1 is coupled to the input node NIN. The second transistor M2 has a control end (e.g., a gate), a first end (e.g., a source), and a second end (e.g., a drain), wherein the control end of the second transistor M2 is used to receive a second driving potential VG2, the first end of the second transistor M2 is coupled to a ground potential VSS (e.g., 0V), and the second end of the second transistor M2 is coupled to the first node N1.

變壓器220包括一主線圈221、一第一副線圈222,以及一第二副線圈223,其中變壓器220更內建一漏電感器LR和一激磁電感器LM。漏電感器LR和激磁電感器LM皆可為變壓器220製造時所附帶產生之固有元件,其並非外部獨立元件。漏電感器LR、主線圈221,以及激磁電感器LM皆可位於變壓器220之同一側(例如:一次側),而第一副線圈222和第二副線圈223則皆可位於變壓器220之相對另一側(例如:二次側,其可與一次側互相隔離開來)。漏電感器LR具有一第一端和一第二端,其中漏電感器LR之第一端係耦接至第一節點N1以接收切換電位VW,而漏電感器LR之第二端係耦接至一第二節點N2。主線圈221具有一第一端和一第二端,其中主線圈221之第一端係耦接至第二節點N2,而主線圈221之第二端係耦接至一第三節點N3。激磁電感器LM具有一第一端和一第二端,其中激磁電感器LM之第一端係耦接至第二節點N2,而激磁電感器LM之第二端係耦接至第三節點N3。第一諧振電容器CR1具有一第一端和一第二端,其中第一諧振電容器CR1之第一端係耦接至第三節點N3,而第一諧振電容器CR1之第二端係耦接至接地電位VSS。例如,漏電感器LR、激磁電感器LM,以及第一諧振電容器CR1三者可共同形成電源供應器200之一諧振槽。第一副線圈222具有一第一端和一第二端,其中第一副線圈222之第一端係耦接至一第四節點N4,而第一副線圈222之第二端係耦接至一共同節點NCM。例如,共同節點NCM可提供一共同電位,其可被視為另一接地電位,並可與前述之接地電位VSS相同或相異。第二副線圈223具有一第一端和一第二端,其中第二副線圈223之第一端係耦接至共同節點NCM,而第二副線圈223之第二端係耦接至一第五節點N5。The transformer 220 includes a main coil 221, a first secondary coil 222, and a second secondary coil 223, wherein the transformer 220 further has a built-in leakage inductor LR and an excitation inductor LM. The leakage inductor LR and the excitation inductor LM can be inherent components generated when the transformer 220 is manufactured, and they are not external independent components. The leakage inductor LR, the main coil 221, and the excitation inductor LM can all be located on the same side of the transformer 220 (for example: the primary side), and the first secondary coil 222 and the second secondary coil 223 can both be located on the opposite side of the transformer 220 (for example: the secondary side, which can be isolated from the primary side). The leakage inductor LR has a first end and a second end, wherein the first end of the leakage inductor LR is coupled to the first node N1 to receive the switching potential VW, and the second end of the leakage inductor LR is coupled to a second node N2. The main coil 221 has a first end and a second end, wherein the first end of the main coil 221 is coupled to the second node N2, and the second end of the main coil 221 is coupled to a third node N3. The excitation inductor LM has a first end and a second end, wherein the first end of the excitation inductor LM is coupled to the second node N2, and the second end of the excitation inductor LM is coupled to the third node N3. The first resonant capacitor CR1 has a first end and a second end, wherein the first end of the first resonant capacitor CR1 is coupled to the third node N3, and the second end of the first resonant capacitor CR1 is coupled to the ground potential VSS. For example, the leakage inductor LR, the excitation inductor LM, and the first resonant capacitor CR1 can together form a resonant slot of the power supply 200. The first sub-coil 222 has a first end and a second end, wherein the first end of the first sub-coil 222 is coupled to a fourth node N4, and the second end of the first sub-coil 222 is coupled to a common node NCM. For example, the common node NCM can provide a common potential, which can be regarded as another ground potential and can be the same as or different from the aforementioned ground potential VSS. The second sub-coil 223 has a first end and a second end, wherein the first end of the second sub-coil 223 is coupled to the common node NCM, and the second end of the second sub-coil 223 is coupled to a fifth node N5.

輸出級電路230包括一第一二極體D1、一第二二極體D2,以及一第一電容器C1。第一二極體D1具有一陽極和一陰極,其中第一二極體D1之陽極係耦接至第四節點N4,而第一二極體D1之陰極係耦接至輸出節點NOUT。第二二極體D2具有一陽極和一陰極,其中第二二極體D2之陽極係耦接至第五節點N5,而第二二極體D2之陰極係耦接至輸出節點NOUT。第一電容器C1具有一第一端和一第二端,其中第一電容器C1之第一端係耦接至輸出節點NOUT,而第一電容器C1之第二端係耦接至共同節點NCM。The output stage circuit 230 includes a first diode D1, a second diode D2, and a first capacitor C1. The first diode D1 has an anode and a cathode, wherein the anode of the first diode D1 is coupled to the fourth node N4, and the cathode of the first diode D1 is coupled to the output node NOUT. The second diode D2 has an anode and a cathode, wherein the anode of the second diode D2 is coupled to the fifth node N5, and the cathode of the second diode D2 is coupled to the output node NOUT. The first capacitor C1 has a first end and a second end, wherein the first end of the first capacitor C1 is coupled to the output node NOUT, and the second end of the first capacitor C1 is coupled to the common node NCM.

可調電容元件240包括一第三電晶體M3、一第四電晶體M4、一第五電晶體M5,以及一第二諧振電容器CR2。例如,第三電晶體M3、第四電晶體M4,以及第五電晶體M5可各自為一N型金氧半場效電晶體。第三電晶體M3具有一控制端(例如:一閘極)、一第一端(例如:一源極),以及一第二端(例如:一汲極),其中第三電晶體M3之控制端係用於接收一放大電位VA,第三電晶體M3之第一端係耦接至接地電位VSS,而第三電晶體M3之第二端係耦接至一第六節點N6。第四電晶體M4具有一控制端(例如:一閘極)、一第一端(例如:一源極),以及一第二端(例如:一汲極),其中第四電晶體M4之控制端係用於接收一控制電位VC,第四電晶體M4之第一端係耦接至第六節點N6,而第四電晶體M4之第二端係耦接至一第七節點N7。第五電晶體M5具有一控制端(例如:一閘極)、一第一端(例如:一源極),以及一第二端(例如:一汲極),其中第五電晶體M5之控制端係用於接收輸出電位VOUT,第五電晶體M5之第一端係耦接至第七節點N7,而第五電晶體M5之第二端係耦接至一第八節點N8。第二諧振電容器CR2具有一第一端和一第二端,其中第二諧振電容器CR2之第一端係耦接至第三節點N3,而第二諧振電容器CR2之第二端係耦接至第八節點N8。第二諧振電容器CR2之電容值可以大於前述之第一諧振電容器CR1之電容值。例如,第二諧振電容器CR2之電容值可為前述之第一諧振電容器CR1之電容值之2倍至3倍,但亦不僅限於此。The adjustable capacitance element 240 includes a third transistor M3, a fourth transistor M4, a fifth transistor M5, and a second resonant capacitor CR2. For example, the third transistor M3, the fourth transistor M4, and the fifth transistor M5 can each be an N-type metal oxide semi-conductor field effect transistor. The third transistor M3 has a control terminal (e.g., a gate), a first terminal (e.g., a source), and a second terminal (e.g., a drain), wherein the control terminal of the third transistor M3 is used to receive an amplified potential VA, the first terminal of the third transistor M3 is coupled to the ground potential VSS, and the second terminal of the third transistor M3 is coupled to a sixth node N6. The fourth transistor M4 has a control terminal (e.g., a gate), a first terminal (e.g., a source), and a second terminal (e.g., a drain), wherein the control terminal of the fourth transistor M4 is used to receive a control potential VC, the first terminal of the fourth transistor M4 is coupled to the sixth node N6, and the second terminal of the fourth transistor M4 is coupled to a seventh node N7. The fifth transistor M5 has a control terminal (e.g., a gate), a first terminal (e.g., a source), and a second terminal (e.g., a drain), wherein the control terminal of the fifth transistor M5 is used to receive the output potential VOUT, the first terminal of the fifth transistor M5 is coupled to the seventh node N7, and the second terminal of the fifth transistor M5 is coupled to an eighth node N8. The second resonant capacitor CR2 has a first end and a second end, wherein the first end of the second resonant capacitor CR2 is coupled to the third node N3, and the second end of the second resonant capacitor CR2 is coupled to the eighth node N8. The capacitance value of the second resonant capacitor CR2 may be greater than the capacitance value of the first resonant capacitor CR1. For example, the capacitance value of the second resonant capacitor CR2 may be 2 to 3 times the capacitance value of the first resonant capacitor CR1, but is not limited thereto.

在一些實施例中,回授補償電路250包括:一線性光耦合器(Linear Optical Coupler)252、一第二電容器C2、一第一電阻器R1,以及一第二電阻器R2。In some embodiments, the feedback compensation circuit 250 includes a linear optical coupler 252, a second capacitor C2, a first resistor R1, and a second resistor R2.

第一電阻器R1具有一第一端和一第二端,其中第一電阻器R1之第一端係耦接至輸入節點NIN,而第一電阻器R1之第二端係耦接至一第九節點N9。第二電阻器R2具有一第一端和一第二端,其中第二電阻器R2之第一端係耦接至第九節點N9,而第二電阻器R2之第二端係耦接至接地電位VSS。例如,第一電阻器R1和第二電阻器R2可形成一分壓電路。在一些實施例中,第九節點N9處之電位V9可大致根據下列方式程式(1)來決定:The first resistor R1 has a first end and a second end, wherein the first end of the first resistor R1 is coupled to the input node NIN, and the second end of the first resistor R1 is coupled to a ninth node N9. The second resistor R2 has a first end and a second end, wherein the first end of the second resistor R2 is coupled to the ninth node N9, and the second end of the second resistor R2 is coupled to the ground potential VSS. For example, the first resistor R1 and the second resistor R2 can form a voltage divider circuit. In some embodiments, the potential V9 at the ninth node N9 can be determined roughly according to the following method (1):

…………………………………(1)其中「V9」代表第九節點N9處之電位V9之位準,「VIN」代表輸入電位VIN之位準,「R1」代表第一電阻器R1之電阻值,而「R2」代表第二電阻器R2之電阻值。 ………………………………(1)Wherein, “V9” represents the level of the potential V9 at the ninth node N9, “VIN” represents the level of the input potential VIN, “R1” represents the resistance value of the first resistor R1, and “R2” represents the resistance value of the second resistor R2.

在一些實施例中,線性光耦合器252係藉由一PCX電子元件來實施。詳細而言,線性光耦合器252包括一發光二極體DL和一雙載子接面電晶體Q6(例如:NPN型)。發光二極體DL具有一陽極和一陰極,其中發光二極體DL之陽極係耦接至第九節點N9,而發光二極體DL之陰極係耦接至接地電位VSS。雙載子接面電晶體Q6具有一集極和一射極,其中雙載子接面電晶體Q6之集極係用於輸出一回授電位VF,而雙載子接面電晶體Q6之射極係耦接至一第十節點N10。In some embodiments, the linear optical coupler 252 is implemented by a PCX electronic component. In detail, the linear optical coupler 252 includes a light emitting diode DL and a bipolar junction transistor Q6 (e.g., NPN type). The light emitting diode DL has an anode and a cathode, wherein the anode of the light emitting diode DL is coupled to the ninth node N9, and the cathode of the light emitting diode DL is coupled to the ground potential VSS. The bipolar junction transistor Q6 has a collector and an emitter, wherein the collector of the bipolar junction transistor Q6 is used to output a feedback potential VF, and the emitter of the bipolar junction transistor Q6 is coupled to a tenth node N10.

另外,第二電容器C2具有一第一端和一第二端,其中第二電容器C2之第一端係耦接至第十節點N10,而第二電容器C2之第二端係耦接至共同節點NCM。必須注意的是,第十節點N10處之電位V10係與前述之回授電位VF相關聯。在一些實施例中,第十節點N10處之電位V10可以幾乎等同於前述之回授電位VF。In addition, the second capacitor C2 has a first end and a second end, wherein the first end of the second capacitor C2 is coupled to the tenth node N10, and the second end of the second capacitor C2 is coupled to the common node NCM. It should be noted that the potential V10 at the tenth node N10 is associated with the aforementioned feedback potential VF. In some embodiments, the potential V10 at the tenth node N10 can be almost equal to the aforementioned feedback potential VF.

偵測及控制電路260包括:一放大器(Amplifier)262、一及閘(AND Gate)264、一微控制器(Microcontroller Unit,MCU)266,以及一負溫度係數電阻器RN。The detection and control circuit 260 includes an amplifier 262, an AND gate 264, a microcontroller unit (MCU) 266, and a negative temperature coefficient resistor RN.

放大器262可將回授電位VF放大一增益倍率K,以產生前述之放大電位VA。例如,增益倍率K可介於7至9之間,但亦不僅限於此。在一些實施例中,此放大電位VA可大致根據下列方式程式(2)來決定:The amplifier 262 can amplify the feedback potential VF by a gain factor K to generate the aforementioned amplified potential VA. For example, the gain factor K can be between 7 and 9, but is not limited thereto. In some embodiments, the amplified potential VA can be determined roughly according to the following formula (2):

…………………………………………(2)其中「VA」代表放大電位VA之位準,「K」代表增益倍率K,而「VF」代表回授電位VF之位準。 …………………………………………(2) “VA” represents the level of the amplified potential VA, “K” represents the gain factor K, and “VF” represents the level of the feedback potential VF.

及閘264具有一第一輸入端、一第二輸入端,以及一輸出端,其中及閘264之第一輸入端係用於接收放大電位VA,及閘264之第二輸入端係用於接收輸出電位VOUT,而及閘264之輸出端係用於輸出一邏輯電位VL。例如,若放大電位VA和輸出電位VOUT兩者皆為高邏輯位準(亦即,邏輯「1」),則及閘264將輸出具有高邏輯位準之邏輯電位VL;反之,若放大電位VA和輸出電位VOUT其中之任一者為低邏輯位準(亦即,邏輯「0」),則及閘264將輸出具有低邏輯位準之邏輯電位VL。The AND gate 264 has a first input terminal, a second input terminal, and an output terminal, wherein the first input terminal of the AND gate 264 is used to receive the amplified potential VA, the second input terminal of the AND gate 264 is used to receive the output potential VOUT, and the output terminal of the AND gate 264 is used to output a logic potential VL. For example, if both the amplified potential VA and the output potential VOUT are high logic levels (i.e., logic "1"), the AND gate 264 will output a logic potential VL with a high logic level; conversely, if either the amplified potential VA or the output potential VOUT is a low logic level (i.e., logic "0"), the AND gate 264 will output a logic potential VL with a low logic level.

微控制器266可產生第一驅動電位VG1和第二驅動電位VG2。例如,第一驅動電位VG1和第二驅動電位VG2兩者可具有互補(Complementary)之邏輯位準,其中第一驅動電位VG1和第二驅動電位VG2之每一者皆可具有一切換頻率FS。另外,微控制器266還可輸出一固定電流IX,其中此固定電流IX可流經負溫度係數電阻器RN。The microcontroller 266 can generate a first driving potential VG1 and a second driving potential VG2. For example, the first driving potential VG1 and the second driving potential VG2 can have complementary logic levels, wherein each of the first driving potential VG1 and the second driving potential VG2 can have a switching frequency FS. In addition, the microcontroller 266 can also output a fixed current IX, wherein the fixed current IX can flow through the negative temperature coefficient resistor RN.

在一些實施例中,負溫度係數電阻器RN係鄰近於第一諧振電容器CR1而設置,以監控第一諧振電容器CR1之一操作溫度。例如,負溫度係數電阻器RN和第一諧振電容器CR1兩者之間距DS可小於或等於3mm,但亦不僅限於此。負溫度係數電阻器RN具有一第一端和一第二端,其中負溫度係數電阻器RN之第一端係耦接至共同節點NCM,而負溫度係數電阻器RN之第二端係用於輸出一溫度相依電位VT至微控制器266。在一些實施例中,若將共同節點NCM處之共同電位設定為0V,則此溫度相依電位VT可大致根據下列方式程式(3)來決定:In some embodiments, the negative temperature coefficient resistor RN is disposed adjacent to the first resonant capacitor CR1 to monitor an operating temperature of the first resonant capacitor CR1. For example, the distance DS between the negative temperature coefficient resistor RN and the first resonant capacitor CR1 may be less than or equal to 3 mm, but is not limited thereto. The negative temperature coefficient resistor RN has a first end and a second end, wherein the first end of the negative temperature coefficient resistor RN is coupled to the common node NCM, and the second end of the negative temperature coefficient resistor RN is used to output a temperature-dependent potential VT to the microcontroller 266. In some embodiments, if the common potential at the common node NCM is set to 0V, the temperature-dependent potential VT may be determined roughly according to the following method (3):

…………………………………………(3)其中「VT」代表溫度相依電位VT之位準,「IX」代表固定電流IX之大小,而「RN」代表負溫度係數電阻器RN之電阻值。 …………………………………………(3)Wherein, “VT” represents the level of the temperature-dependent potential VT, “IX” represents the magnitude of the fixed current IX, and “RN” represents the resistance value of the negative temperature coefficient resistor RN.

例如,若第一諧振電容器CR1之操作溫度下降,則負溫度係數電阻器RN之電阻值將會變大且溫度相依電位VT將會變高;反之,若第一諧振電容器CR1之操作溫度上升,則負溫度係數電阻器RN之電阻值將會變小且溫度相依電位VT將會變低。For example, if the operating temperature of the first resonant capacitor CR1 decreases, the resistance value of the negative temperature coefficient resistor RN will increase and the temperature-dependent potential VT will increase; conversely, if the operating temperature of the first resonant capacitor CR1 increases, the resistance value of the negative temperature coefficient resistor RN will decrease and the temperature-dependent potential VT will decrease.

作為回應,微控制器266可持續地監控來自負溫度係數電阻器RN之溫度相依電位VT,並可將此溫度相依電位VT與一參考電位VR互相比較。例如,參考電位VR可介於1V至1.5V之間,但亦不僅限於此。例如,若溫度相依電位VT低於或等於參考電位VR,則微控制器266將可輸出具有高邏輯位準之控制電位VC;反之,若溫度相依電位VT高於參考電位VR,則微控制器266將可輸出具有低邏輯位準之控制電位VC。In response, the microcontroller 266 may continuously monitor the temperature-dependent potential VT from the negative temperature coefficient resistor RN, and may compare the temperature-dependent potential VT with a reference potential VR. For example, the reference potential VR may be between 1V and 1.5V, but is not limited thereto. For example, if the temperature-dependent potential VT is lower than or equal to the reference potential VR, the microcontroller 266 may output a control potential VC with a high logic level; conversely, if the temperature-dependent potential VT is higher than the reference potential VR, the microcontroller 266 may output a control potential VC with a low logic level.

在一些實施例中,電源供應器200之操作原理可如下列所述。一般來說,在電源供應器200進入一穩定狀態之後,放大電位VA和輸出電位VOUT皆夠高且足以致能第三電晶體M3和第五電晶體M5。在一開始,當第一諧振電容器CR1之操作溫度相對較低時,微控制器266會輸出具有低邏輯位準之控制電位VC以禁能第四電晶體M4(或禁能可調電容元件240)。此時,電源供應器200之諧振槽之總諧振電容值可大致根據下列方式程式(4)來決定:In some embodiments, the operating principle of the power supply 200 can be described as follows. Generally speaking, after the power supply 200 enters a stable state, the amplified potential VA and the output potential VOUT are both high enough to enable the third transistor M3 and the fifth transistor M5. At the beginning, when the operating temperature of the first resonant capacitor CR1 is relatively low, the microcontroller 266 will output a control potential VC with a low logic level to disable the fourth transistor M4 (or disable the adjustable capacitance element 240). At this time, the total resonant capacitance value of the resonant tank of the power supply 200 can be roughly determined according to the following method program (4):

……………………………………………(4)其中「CT」代表電源供應器200之諧振槽之總諧振電容值,而「CR1」代表第一諧振電容器CR1之電容值。 ……………………………………………(4)Wherein, “CT” represents the total resonant capacitance value of the resonant tank of the power supply 200, and “CR1” represents the capacitance value of the first resonant capacitor CR1.

在一段時間過後,當第一諧振電容器CR1之操作溫度相對較高時,微控制器266會輸出具有高邏輯位準之控制電位VC以致能第四電晶體M4(或致能可調電容元件240),使得第二諧振電容器CR2將會與第一諧振電容器CR1兩者進行並聯耦接。此時,電源供應器200之諧振槽之總諧振電容值可大致根據下列方式程式(5)來決定:After a period of time, when the operating temperature of the first resonant capacitor CR1 is relatively high, the microcontroller 266 will output a control potential VC with a high logic level to enable the fourth transistor M4 (or enable the adjustable capacitance element 240), so that the second resonant capacitor CR2 will be coupled in parallel with the first resonant capacitor CR1. At this time, the total resonant capacitance value of the resonant tank of the power supply 200 can be roughly determined according to the following method (5):

……………………………………(5)其中「CT」代表電源供應器200之諧振槽之總諧振電容值,「CR1」代表第一諧振電容器CR1之電容值,而「CR2」代表第二諧振電容器CR2之電容值。 ……………………………………(5)Wherein, “CT” represents the total resonant capacitance value of the resonant tank of the power supply 200, “CR1” represents the capacitance value of the first resonant capacitor CR1, and “CR2” represents the capacitance value of the second resonant capacitor CR2.

必須理解的是,電源供應器200之品質因數係與電源供應器200之諧振槽之總諧振電容值之開根號值兩者恰好呈現反比關係。換言之,若電源供應器200之諧振槽之總諧振電容值增加,則其對應之品質因數將會變小,而若電源供應器200之諧振槽之總諧振電容值減少,則其對應之品質因數將會變大。It must be understood that the quality factor of the power supply 200 is inversely proportional to the square root of the total resonant capacitance of the resonant tank of the power supply 200. In other words, if the total resonant capacitance of the resonant tank of the power supply 200 increases, the corresponding quality factor will decrease, and if the total resonant capacitance of the resonant tank of the power supply 200 decreases, the corresponding quality factor will increase.

第3圖係顯示根據本發明一實施例所述之電源供應器200之操作特性圖,其中橫軸代表電源供應器200之切換頻率FS,而縱軸代表電源供應器200之增益值。例如,電源供應器200之增益值可指輸出電位VOUT對輸入電位VIN之比值。在一些實施例中,電源供應器200之切換頻率FS可介於一第一頻率F1和一第二頻率F2之間,其一般可暫時先設定為第二頻率F2。如第3圖所示,一第一曲線CC1代表電源供應器200於初始時之操作特性,而一第二曲線CC2則代表電源供應器200進入穩定狀態後之操作特性。在所提之設計下,初始時電源供應器200具有相對較大之品質因數(例如:2),而操作於穩定狀態之電源供應器200則具有相對較小之品質因數(例如:0.5)。在此可先假設電源供應器200欲提供一目標增益值GT。初始時(參考第一曲線CC1),因為第一諧振電容器CR1之操作溫度相對較低,所以電源供應器200之切換頻率FS須由第二頻率F2下降至一第一所需頻率FA,其間具有一第一頻率差值 。在電源供應器200進入穩定狀態之後(參考第二曲線CC2),因為第一諧振電容器CR1之操作溫度相對較高,所以電源供應器200之切換頻率FS僅須由第二頻率F2下降至一第二所需頻率FB,其間具有一第二頻率差值 。必須注意的是,由於第二頻率差值 明顯較第一頻率差值 更小,故操作於穩定狀態之電源供應器200僅須藉由使用非常小之頻率變化即能提供前述之目標增益值GT。根據第3圖之量測結果,所提之電源供應器200相關之電磁干擾將能大幅度地降低。 FIG. 3 is a diagram showing the operating characteristics of the power supply 200 according to an embodiment of the present invention, wherein the horizontal axis represents the switching frequency FS of the power supply 200, and the vertical axis represents the gain value of the power supply 200. For example, the gain value of the power supply 200 may refer to the ratio of the output potential VOUT to the input potential VIN. In some embodiments, the switching frequency FS of the power supply 200 may be between a first frequency F1 and a second frequency F2, and it may generally be temporarily set to the second frequency F2. As shown in FIG. 3, a first curve CC1 represents the operating characteristics of the power supply 200 at the initial stage, and a second curve CC2 represents the operating characteristics of the power supply 200 after entering a stable state. Under the proposed design, the power supply 200 has a relatively large quality factor (e.g., 2) at the beginning, and the power supply 200 operating in a stable state has a relatively small quality factor (e.g., 0.5). It can be assumed here that the power supply 200 wants to provide a target gain value GT. Initially (refer to the first curve CC1), because the operating temperature of the first resonant capacitor CR1 is relatively low, the switching frequency FS of the power supply 200 must be reduced from the second frequency F2 to a first required frequency FA, with a first frequency difference. After the power supply 200 enters the stable state (refer to the second curve CC2), because the operating temperature of the first resonant capacitor CR1 is relatively high, the switching frequency FS of the power supply 200 only needs to drop from the second frequency F2 to a second required frequency FB, with a second frequency difference It must be noted that due to the second frequency difference Obviously higher than the first frequency difference Therefore, the power supply 200 operating in a stable state can provide the aforementioned target gain value GT only by using a very small frequency change. According to the measurement results of FIG. 3 , the electromagnetic interference associated with the power supply 200 can be greatly reduced.

本發明提出一種新穎之電源供應器,其具有可調之品質因數。根據實際量測結果,使用前述設計之電源供應器相關之電磁干擾將能被有效地抑制,故其很適合應用於各種各式之裝置當中。The present invention proposes a novel power supply with an adjustable quality factor. According to actual measurement results, the electromagnetic interference associated with the power supply using the above design can be effectively suppressed, so it is very suitable for application in various types of devices.

值得注意的是,以上所述之電位、電流、電阻值、電感值、電容值,以及其餘元件參數均非為本發明之限制條件。設計者可以根據不同需要調整這些設定值。本發明之電源供應器並不僅限於第1-3圖所圖示之狀態。本發明可以僅包括第1-3圖之任何一或複數個實施例之任何一或複數項特徵。換言之,並非所有圖示之特徵均須同時實施於本發明之電源供應器當中。雖然本發明之實施例係使用金氧半場效電晶體為例,但本發明並不僅限於此,本技術領域人士可改用其他種類之電晶體,例如:接面場效電晶體,或是鰭式場效電晶體等等,而不致於影響本發明之效果。It is worth noting that the potential, current, resistance, inductance, capacitance, and other component parameters described above are not limiting conditions of the present invention. Designers can adjust these settings according to different needs. The power supply of the present invention is not limited to the states shown in Figures 1-3. The present invention may only include any one or more features of any one or more embodiments of Figures 1-3. In other words, not all of the features shown in the diagrams need to be implemented in the power supply of the present invention at the same time. Although the embodiments of the present invention use metal oxide semi-conductor field effect transistors as an example, the present invention is not limited to this. People in the technical field can use other types of transistors, such as junction field effect transistors, or fin field effect transistors, etc., without affecting the effects of the present invention.

在本說明書以及申請專利範圍中的序數,例如「第一」、「第二」、「第三」等等,彼此之間並沒有順序上的先後關係,其僅用於標示區分兩個具有相同名字之不同元件。Ordinal numbers in this specification and the scope of the patent application, such as "first", "second", "third", etc., have no sequential relationship with each other, and are only used to mark and distinguish two different components with the same name.

本發明雖以較佳實施例揭露如上,然其並非用以限定本發明的範圍,任何熟習此項技藝者,在不脫離本發明之精神和範圍內,當可做些許的更動與潤飾,因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。Although the present invention is disclosed as above with the preferred embodiments, it is not intended to limit the scope of the present invention. Anyone skilled in the art can make some changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the scope defined by the attached patent application.

100,200:電源供應器 110,210:切換電路 120,220:變壓器 121,221:主線圈 122,222:第一副線圈 123,223:第二副線圈 130,230:輸出級電路 140,240:可調電容元件 150,250:回授補償電路 160,260:偵測及控制電路 252:線性光耦合器 262:放大器 264:及閘 266:微控制器 C1:第一電容器 C2:第二電容器 CC1:第一曲線 CC2:第二曲線 CR1:第一諧振電容器 CR2:第二諧振電容器 D1:第一二極體 D2:第二二極體 DL:發光二極體 DS:間距 F1:第一頻率 F2:第二頻率 FA:第一所需頻率 FB:第二所需頻率 FS:切換頻率 GT:目標增益值 IX:固定電流 K:增益倍率 LM:激磁電感器 LR:漏電感器 M1:第一電晶體 M2:第二電晶體 M3:第三電晶體 M4:第四電晶體 M5:第五電晶體 N1:第一節點 N2:第二節點 N3:第三節點 N4:第四節點 N5:第五節點 N6:第六節點 N7:第七節點 N8:第八節點 N9:第九節點 N10:第十節點 NCM:共同節點 NIN1:第一輸入節點 NIN2:第二輸入節點 NOUT:輸出節點 Q6:雙載子接面電晶體 R1:第一電阻器 R2:第二電阻器 RN:負溫度係數電阻器 V9,V10:電位 VA:放大電位 VC:控制電位 VF:回授電位 VG1:第一驅動電位 VG2:第二驅動電位 VIN:輸入電位 VL:邏輯電位 VOUT:輸出電位 VR:參考電位 VSS:接地電位 VT:溫度相依電位 VW:切換電位 ΔA:第一頻率差值 ΔB:第二頻率差值100,200: Power supply 110,210: Switching circuit 120,220: Transformer 121,221: Main coil 122,222: First secondary coil 123,223: Second secondary coil 130,230: Output stage circuit 140,240: Adjustable capacitor element 150,250: Feedback compensation circuit 160,260: Detection and control circuit 252: Linear optocoupler 262: Amplifier 264: AND gate 266: Microcontroller C1: First capacitor C2: Second capacitor CC1: First curve CC2: Second curve CR1: First resonant capacitor CR2: Second resonant capacitor D1: First diode D2: Second diode DL: Light-emitting diode DS: Spacing F1: First frequency F2: Second frequency FA: First desired frequency FB: Second desired frequency FS: Switching frequency GT: Target gain value IX: Fixed current K: Gain multiplier LM: Excitation inductor LR: Leakage inductor M1: First transistor M2: Second transistor M3: Third transistor M4: Fourth transistor M5: Fifth transistor N1: First node N2: Second node N3: Third node N4: Fourth node N5: Fifth node N6: Sixth node N7: Seventh node N8: Eighth node N9: Ninth node N10: Tenth node NCM: Common node NIN1: First input node NIN2: Second input node NOUT: Output node Q6: Bipolar junction transistor R1: First resistor R2: Second resistor RN: Negative temperature coefficient resistor V9, V10: Potential VA: Amplification potential VC: Control potential VF: Feedback potential VG1: First drive potential VG2: Second drive potential VIN: Input potential VL: Logic potential VOUT: Output potential VR: Reference potential VSS: Ground potential VT: Temperature dependent potential VW: Switching potential ΔA: First frequency difference ΔB: Second frequency difference

第1圖係顯示根據本發明一實施例所述之電源供應器之示意圖。 第2圖係顯示根據本發明一實施例所述之電源供應器之電路圖。 第3圖係顯示根據本發明一實施例所述之電源供應器之操作特性圖。 FIG. 1 is a schematic diagram showing a power supply according to an embodiment of the present invention. FIG. 2 is a circuit diagram showing a power supply according to an embodiment of the present invention. FIG. 3 is an operating characteristic diagram showing a power supply according to an embodiment of the present invention.

100:電源供應器 100: Power supply

110:切換電路 110: Switching circuit

120:變壓器 120: Transformer

121:主線圈 121: Main coil

122:第一副線圈 122: First coil

123:第二副線圈 123: Second coil

130:輸出級電路 130: Output stage circuit

140:可調電容元件 140: Adjustable capacitor element

150:回授補償電路 150: Feedback compensation circuit

160:偵測及控制電路 160: Detection and control circuit

CR1:第一諧振電容器 CR1: First resonant capacitor

DS:間距 DS: Spacing

LM:激磁電感器 LM: Magnetizing inductor

LR:漏電感器 LR: Leakage Inductor

RN:負溫度係數電阻器 RN: Negative temperature coefficient resistor

VF:回授電位 VF: Feedback potential

VG1:第一驅動電位 VG1: first driving potential

VG2:第二驅動電位 VG2: Second driving potential

VIN:輸入電位 VIN: input voltage

VOUT:輸出電位 VOUT: output voltage

VT:溫度相依電位 VT: Temperature dependent potential

VW:切換電位 VW: Switching potential

Claims (10)

一種抑制電磁干擾之電源供應器,包括: 一切換電路,根據一輸入電位、一第一驅動電位,以及一第二驅動電位來產生一切換電位; 一變壓器,包括一主線圈、一第一副線圈,以及一第二副線圈,其中該變壓器內建一漏電感器和一激磁電感器,而該主線圈係經由該漏電感器接收該切換電位; 一第一諧振電容器,耦接至該激磁電感器; 一輸出級電路,耦接至該第一副線圈和該第二副線圈,並產生一輸出電位; 一可調電容元件,耦接至該激磁電感器; 一回授補償電路,根據該輸入電位來產生一回授電位;以及 一偵測及控制電路,產生該第一驅動電位和該第二驅動電位,並包括鄰近於該第一諧振電容器之一負溫度係數電阻器,其中該負溫度係數電阻器提供一溫度相依電位; 其中該偵測及控制電路係根據該輸出電位、該回授電位,以及該溫度相依電位來選擇性地致能或禁能該可調電容元件。 A power supply for suppressing electromagnetic interference, comprising: A switching circuit, generating a switching potential according to an input potential, a first driving potential, and a second driving potential; A transformer, comprising a main coil, a first sub-coil, and a second sub-coil, wherein the transformer has a built-in leakage inductor and an excitation inductor, and the main coil receives the switching potential through the leakage inductor; A first resonant capacitor, coupled to the excitation inductor; An output stage circuit, coupled to the first sub-coil and the second sub-coil, and generating an output potential; An adjustable capacitance element, coupled to the excitation inductor; A feedback compensation circuit, generating a feedback potential according to the input potential; and A detection and control circuit generates the first driving potential and the second driving potential, and includes a negative temperature coefficient resistor adjacent to the first resonant capacitor, wherein the negative temperature coefficient resistor provides a temperature-dependent potential; wherein the detection and control circuit selectively enables or disables the adjustable capacitance element according to the output potential, the feedback potential, and the temperature-dependent potential. 如請求項1所述之電源供應器,其中該切換電路包括: 一第一電晶體,具有一控制端、一第一端,以及一第二端,其中該第一電晶體之該控制端係用於接收該第一驅動電位,該第一電晶體之該第一端係耦接至一第一節點以輸出該切換電位,而該第一電晶體之該第二端係耦接至一輸入節點以接收該輸入電位;以及 一第二電晶體,具有一控制端、一第一端,以及一第二端,其中該第二電晶體之該控制端係用於接收該第二驅動電位,該第二電晶體之該第一端係耦接至一接地電位,而該第二電晶體之該第二端係耦接至該第一節點。 A power supply as described in claim 1, wherein the switching circuit comprises: a first transistor having a control terminal, a first terminal, and a second terminal, wherein the control terminal of the first transistor is used to receive the first driving potential, the first terminal of the first transistor is coupled to a first node to output the switching potential, and the second terminal of the first transistor is coupled to an input node to receive the input potential; and a second transistor having a control terminal, a first terminal, and a second terminal, wherein the control terminal of the second transistor is used to receive the second driving potential, the first terminal of the second transistor is coupled to a ground potential, and the second terminal of the second transistor is coupled to the first node. 如請求項2所述之電源供應器,其中該漏電感器具有一第一端和一第二端,該漏電感器之該第一端係耦接至該第一節點以接收該切換電位,該漏電感器之該第二端係耦接至一第二節點,該主線圈具有一第一端和一第二端,該主線圈之該第一端係耦接至該第二節點,該主線圈之該第二端係耦接至一第三節點,該激磁電感器具有一第一端和一第二端,該激磁電感器之該第一端係耦接至該第二節點,該激磁電感器之該第二端係耦接至該第三節點,該第一諧振電容器具有一第一端和一第二端,該第一諧振電容器之該第一端係耦接至該第三節點,該第一諧振電容器之該第二端係耦接至該接地電位,該第一副線圈具有一第一端和一第二端,該第一副線圈之該第一端係耦接至一第四節點,該第一副線圈之該第二端係耦接至一共同節點,該第二副線圈具有一第一端和一第二端,該第二副線圈之該第一端係耦接至該共同節點,而該第二副線圈之該第二端係耦接至一第五節點。A power supply as described in claim 2, wherein the leakage inductor has a first end and a second end, the first end of the leakage inductor is coupled to the first node to receive the switching potential, the second end of the leakage inductor is coupled to a second node, the main coil has a first end and a second end, the first end of the main coil is coupled to the second node, the second end of the main coil is coupled to a third node, the excitation inductor has a first end and a second end, the first end of the excitation inductor is coupled to the second node, the second end of the excitation inductor is coupled to the third node. The first resonant capacitor has a first end and a second end, the first end of the first resonant capacitor is coupled to the third node, the second end of the first resonant capacitor is coupled to the ground potential, the first secondary coil has a first end and a second end, the first end of the first secondary coil is coupled to a fourth node, the second end of the first secondary coil is coupled to a common node, the second secondary coil has a first end and a second end, the first end of the second secondary coil is coupled to the common node, and the second end of the second secondary coil is coupled to a fifth node. 如請求項3所述之電源供應器,其中該輸出級電路包括: 一第一二極體,具有一陽極和一陰極,其中該第一二極體之該陽極係耦接至該第四節點,而該第一二極體之該陰極係耦接至一輸出節點以輸出該輸出電位; 一第二二極體,具有一陽極和一陰極,其中該第二二極體之該陽極係耦接至該第五節點,而該第二二極體之該陰極係耦接至該輸出節點;以及 一第一電容器,具有一第一端和一第二端,其中該第一電容器之該第一端係耦接至該輸出節點,而該第一電容器之該第二端係耦接至該共同節點。 A power supply as described in claim 3, wherein the output stage circuit comprises: a first diode having an anode and a cathode, wherein the anode of the first diode is coupled to the fourth node, and the cathode of the first diode is coupled to an output node to output the output potential; a second diode having an anode and a cathode, wherein the anode of the second diode is coupled to the fifth node, and the cathode of the second diode is coupled to the output node; and a first capacitor having a first end and a second end, wherein the first end of the first capacitor is coupled to the output node, and the second end of the first capacitor is coupled to the common node. 如請求項4所述之電源供應器,其中該可調電容元件包括: 一第三電晶體,具有一控制端、一第一端,以及一第二端,其中該第三電晶體之該控制端係用於接收一放大電位,該第三電晶體之該第一端係耦接至該接地電位,而該第三電晶體之該第二端係耦接至一第六節點; 一第四電晶體,具有一控制端、一第一端,以及一第二端,其中該第四電晶體之該控制端係用於接收一控制電位,該第四電晶體之該第一端係耦接至該第六節點,而該第四電晶體之該第二端係耦接至一第七節點; 一第五電晶體,具有一控制端、一第一端,以及一第二端,其中該第五電晶體之該控制端係用於接收該輸出電位,該第五電晶體之該第一端係耦接至該第七節點,而該第五電晶體之該第二端係耦接至一第八節點;以及 一第二諧振電容器,具有一第一端和一第二端,其中該第二諧振電容器之該第一端係耦接至該第三節點,而該第二諧振電容器之該第二端係耦接至該第八節點。 A power supply as described in claim 4, wherein the adjustable capacitance element comprises: A third transistor having a control terminal, a first terminal, and a second terminal, wherein the control terminal of the third transistor is used to receive an amplified potential, the first terminal of the third transistor is coupled to the ground potential, and the second terminal of the third transistor is coupled to a sixth node; A fourth transistor having a control terminal, a first terminal, and a second terminal, wherein the control terminal of the fourth transistor is used to receive a control potential, the first terminal of the fourth transistor is coupled to the sixth node, and the second terminal of the fourth transistor is coupled to a seventh node; a fifth transistor having a control terminal, a first terminal, and a second terminal, wherein the control terminal of the fifth transistor is used to receive the output potential, the first terminal of the fifth transistor is coupled to the seventh node, and the second terminal of the fifth transistor is coupled to an eighth node; and a second resonant capacitor having a first terminal and a second terminal, wherein the first terminal of the second resonant capacitor is coupled to the third node, and the second terminal of the second resonant capacitor is coupled to the eighth node. 如請求項5所述之電源供應器,其中該回授補償電路包括: 一第一電阻器,具有一第一端和一第二端,其中該第一電阻器之該第一端係耦接至該輸入節點以接收該輸入電位,而該第一電阻器之該第二端係耦接至一第九節點; 一第二電阻器,具有一第一端和一第二端,其中該第二電阻器之該第一端係耦接至該第九節點,而該第二電阻器之該第二端係耦接至該接地電位; 一線性光耦合器,包括一發光二極體和一雙載子接面電晶體,其中該發光二極體具有一陽極和一陰極,該發光二極體之該陽極係耦接至該第九節點,該發光二極體之該陰極係耦接至該接地電位,該雙載子接面電晶體具有一集極和一射極,該雙載子接面電晶體之該集極係用於輸出該回授電位,而該雙載子接面電晶體之該射極係耦接至一第十節點;以及 一第二電容器,具有一第一端和一第二端,其中該第二電容器之該第一端係耦接至該第十節點,而該第二電容器之該第二端係耦接至該共同節點。 A power supply as described in claim 5, wherein the feedback compensation circuit comprises: a first resistor having a first end and a second end, wherein the first end of the first resistor is coupled to the input node to receive the input potential, and the second end of the first resistor is coupled to a ninth node; a second resistor having a first end and a second end, wherein the first end of the second resistor is coupled to the ninth node, and the second end of the second resistor is coupled to the ground potential; A linear optical coupler includes a light-emitting diode and a bipolar junction transistor, wherein the light-emitting diode has an anode and a cathode, the anode of the light-emitting diode is coupled to the ninth node, the cathode of the light-emitting diode is coupled to the ground potential, the bipolar junction transistor has a collector and an emitter, the collector of the bipolar junction transistor is used to output the feedback potential, and the emitter of the bipolar junction transistor is coupled to a tenth node; and a second capacitor, having a first end and a second end, wherein the first end of the second capacitor is coupled to the tenth node, and the second end of the second capacitor is coupled to the common node. 如請求項5所述之電源供應器,其中該偵測及控制電路更包括: 一放大器,將該回授電位放大一增益倍率,以產生該放大電位;以及 一及閘,具有一第一輸入端、一第二輸入端,以及一輸出端,其中該及閘之該第一輸入端係用於接收該放大電位,該及閘之該第二輸入端係用於接收該輸出電位,而該及閘之該輸出端係用於輸出一邏輯電位。 The power supply as described in claim 5, wherein the detection and control circuit further comprises: an amplifier, which amplifies the feedback potential by a gain factor to generate the amplified potential; and an AND gate, which has a first input terminal, a second input terminal, and an output terminal, wherein the first input terminal of the AND gate is used to receive the amplified potential, the second input terminal of the AND gate is used to receive the output potential, and the output terminal of the AND gate is used to output a logic potential. 如請求項7所述之電源供應器,其中該偵測及控制電路更包括: 一微控制器,產生該第一驅動電位和該第二驅動電位,並輸出一固定電流,其中該固定電流係流經該負溫度係數電阻器; 其中該負溫度係數電阻器具有一第一端和一第二端,該負溫度係數電阻器之該第一端係耦接至該共同節點,而該負溫度係數電阻器之該第二端係用於輸出該溫度相依電位至該微控制器。 A power supply as described in claim 7, wherein the detection and control circuit further comprises: A microcontroller, generating the first driving potential and the second driving potential, and outputting a fixed current, wherein the fixed current flows through the negative temperature coefficient resistor; wherein the negative temperature coefficient resistor has a first end and a second end, the first end of the negative temperature coefficient resistor is coupled to the common node, and the second end of the negative temperature coefficient resistor is used to output the temperature-dependent potential to the microcontroller. 如請求項8所述之電源供應器,其中若該溫度相依電位低於或等於一參考電位,則該微控制器將輸出具有高邏輯位準之該控制電位,而若該溫度相依電位高於該參考電位,則該微控制器將輸出具有低邏輯位準之該控制電位。A power supply as described in claim 8, wherein if the temperature-dependent potential is lower than or equal to a reference potential, the microcontroller will output the control potential with a high logic level, and if the temperature-dependent potential is higher than the reference potential, the microcontroller will output the control potential with a low logic level. 如請求項1所述之電源供應器,其中該負溫度係數電阻器與該第一諧振電容器之間距係小於或等於3mm。A power supply as described in claim 1, wherein the distance between the negative temperature coefficient resistor and the first resonant capacitor is less than or equal to 3 mm.
TW113124791A 2024-07-03 2024-07-03 Power supply device for suppressing electromagnetic interference TWI879622B (en)

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TWI474592B (en) * 2013-04-29 2015-02-21 Chicony Power Tech Co Ltd Bypass apparatus for negative temperature coefficient thermistor
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