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TWI867551B - A pitch adjustable method of mass transferring electronic devices - Google Patents

A pitch adjustable method of mass transferring electronic devices Download PDF

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TWI867551B
TWI867551B TW112119959A TW112119959A TWI867551B TW I867551 B TWI867551 B TW I867551B TW 112119959 A TW112119959 A TW 112119959A TW 112119959 A TW112119959 A TW 112119959A TW I867551 B TWI867551 B TW I867551B
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substrate
electronic components
row
light
electronic component
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TW112119959A
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TW202447923A (en
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葉庭弼
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前源科技股份有限公司
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Priority to JP2024069514A priority patent/JP7732137B2/en
Priority to CN202410547488.3A priority patent/CN119050208A/en
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Abstract

This invention provides a pitch adjustable method of mass transferring electronic devices, comprising the steps of: providing a first substrate with a first electronic device matrix with a column space of X1 and a row space of Y2 consisted of M columns timing N rows electronic devices, wherein M, N are natural numbers greater than 1; providing a second substrate and disposing under the first substrate; and transferring part or all of the electronic devices of the first electronic device matrix from the first substrate to the second substrate to form a second electronic device matrix with a column space of X2 and a row space of Y2 thereon, wherein X2, Y2>0, X1≠X2 and/or Y1≠Y2.

Description

可調整間距的巨量轉移電子元件的方法 Method for mass transfer of electronic components with adjustable spacing

本發明是關於一種巨量轉移電子元件的方法,且特別是關於一種可調整間距的巨量轉移電子元件的方法。 The present invention relates to a method for mass transferring electronic components, and in particular to a method for mass transferring electronic components with adjustable spacing.

發光二極體具備主動發光、高亮度、節省能源等優點,因此已經廣泛地被應用於照明、顯示器、投影機等技術領域中,且微發光二極體顯示器(Micro LED display)已逐漸成為新一代的顯示技術。惟,一個高密度(FHD:Full High Density)的顯示器具有1920行*1080列大約200萬個畫素,每一個畫素還要再分為紅、綠、藍三個次畫素(Sub pixel),因此一個高密度發光二極體顯示器(FHD LED Display)總共有大約600萬個LED晶粒(Die),要將600萬個晶粒切割後黏貼在顯示器面板的基板上,其關鍵技術在於如何將巨量之微型發光二極體精確地轉移至顯示器面板的基板上並加以固定接合。 LEDs have the advantages of active luminescence, high brightness, and energy saving, so they have been widely used in technical fields such as lighting, displays, and projectors. Micro LED displays have gradually become a new generation of display technology. However, a FHD (Full High Density) display has 1920 rows and 1080 columns, about 2 million pixels, and each pixel is further divided into three sub-pixels: red, green, and blue. Therefore, a FHD LED display has a total of about 6 million LED dies. To cut and paste these 6 million dies on the substrate of the display panel, the key technology lies in how to accurately transfer a large number of micro-LEDs to the substrate of the display panel and fix them together.

圖1A~1D的俯視圖所繪示的是一種習知巨量轉移電子元件的方法,其步驟包括:提供一如圖1A所示的暫時基板10,該暫時基板具有相對的第一上表面10A與第一下表面10B,且該第一上表面10A形成有複數電子元件12,且該等電子元件12彼此間隔排列,形成一電子元件矩陣(未標示),且該電子元件矩陣之行距與列距分別為X1、Y1,且X1、Y1>0,其中,該暫時基板10為一熱解膠膜或一光解膠膜;提供一如圖1B所示的目標基板20,該目標基板20具有相對 的第二上表面20A與第二下表面20B,然後將該暫時基板10設置於該目標基板20上方,使該暫時基板10的第一上表面10A面向該目標基板20的第二上表面20A;然後,提供一具第一波長的光(未繪示)於該暫時基板10上方,並使該具第一波長的光沿照射該暫時基板20使其被熱解或光解而失去黏性,並使該等電子元件12如圖1C所示般全部被剝離並接合於該目標基板20的第二上表面20A。利用此習知巨量轉移電子元件的方法,雖可將複數電子元件12迅速地自暫時基板的第一上表面10A巨量轉移至目標基板20的第二上表面20A,不過如圖1D所示,位在該第二上表面20A的該等電子元件12所形成的電子元件矩陣(未標示),其行距與列距仍為X1、Y1,無法視需要調整電子元件之間的間距,使其應用受到相當大的限制。 The top views of FIGS. 1A to 1D show a method for mass transfer of electronic components, the steps of which include: providing a temporary substrate 10 as shown in FIG. 1A, the temporary substrate having a first upper surface 10A and a first lower surface 10B opposite to each other, and the first upper surface 10A is formed with a plurality of electronic components 12, and the electronic components 12 are arranged at intervals to form an electronic component matrix (not shown), and the row spacing and column spacing of the electronic component matrix are X1 and Y1 respectively, and X1 and Y1>0, wherein the temporary substrate 10 is a pyrolytic adhesive film or a photolytic adhesive film; providing a target substrate as shown in FIG. 1B The target substrate 20 has a second upper surface 20A and a second lower surface 20B opposite to each other, and then the temporary substrate 10 is arranged above the target substrate 20, so that the first upper surface 10A of the temporary substrate 10 faces the second upper surface 20A of the target substrate 20; then, a light with a first wavelength (not shown) is provided above the temporary substrate 10, and the light with the first wavelength is irradiated along the temporary substrate 20 to make it pyrolyzed or photolyzed to lose its viscosity, and the electronic components 12 are all peeled off and bonded to the second upper surface 20A of the target substrate 20 as shown in FIG. 1C. Although the known method of mass transferring electronic components can quickly transfer a plurality of electronic components 12 from the first upper surface 10A of the temporary substrate to the second upper surface 20A of the target substrate 20, as shown in FIG. 1D , the electronic component matrix (not shown) formed by the electronic components 12 on the second upper surface 20A still has a row spacing and a column spacing of X1 and Y1, and the spacing between the electronic components cannot be adjusted as needed, which greatly limits its application.

有鑑於此,一種可調整間距的巨量轉移電子元件的方法乃業界所殷切期盼。 In view of this, a method for mass transfer of electronic components with adjustable spacing is eagerly awaited by the industry.

本發明揭示一種可調整間距的巨量轉移電子元件的方法,其步驟包括:提供一第一基板,該第一基板具有相對的第一上表面與第一下表面,其中該第一基板的該第一上表面具有複數個電子元件,且該等電子元件分別沿第一軸方向與第二軸方向排列,形成一個由M行電子元件乘以N列電子元件排列所形成的第一電子元件陣列,其中,該第一軸方向與該第二軸方向實質互相垂直,M、N為大於1的自然數,且該第一電子元件陣列之行距、列距分別為X1、Y1,且X1、Y1>0;提供一第二基板,並將該第二基板設置於該第一基板下方,該第二基板具有相對的第二上表面與第二下表面,且該第一基板的該第一上表面面向該第二基板的該第二上表面;以及將位在該第一基板的該等電子元件全部或部分轉 移至該第二基板,並在該第二基板的該第二上表面形成一第二電子元件陣列,且該第二電子元件陣列之行距、列距分別為X2、Y2,X2、Y2>0,且X1≠X2,Y1≠Y2。 The present invention discloses a method for mass transfer of electronic components with adjustable spacing, the steps of which include: providing a first substrate, the first substrate having a first upper surface and a first lower surface opposite to each other, wherein the first upper surface of the first substrate has a plurality of electronic components, and the electronic components are arranged along a first axis direction and a second axis direction, respectively, to form a first electronic component array formed by arranging M rows of electronic components by N columns of electronic components, wherein the first axis direction and the second axis direction are substantially perpendicular to each other, M and N are natural numbers greater than 1, and the row spacing and column spacing of the first electronic component array are respectively X1, Y1, and X1, Y1>0; provide a second substrate, and set the second substrate below the first substrate, the second substrate has a second upper surface and a second lower surface opposite to each other, and the first upper surface of the first substrate faces the second upper surface of the second substrate; and transfer all or part of the electronic components located on the first substrate to the second substrate, and form a second electronic component array on the second upper surface of the second substrate, and the row spacing and column spacing of the second electronic component array are X2, Y2 respectively, X2, Y2>0, and X1≠X2, Y1≠Y2.

如前所述的可調整間距的巨量轉移電子元件的方法,其中該第二電子元件陣列的形成步驟,包括:提供一具第一波長的第一光於該第一基板上方,並使該具第一波長的第一光照射該第一電子元件陣列的第J行、第K列的該電子元件所在的該第一基板使其被熱解或光解而失去黏性,並使第J行、第K列的該電子元件選擇性地被剝離並接合於該第二基板的該第二上表面,然後使該第一基板相對於該第二基板沿該第一軸方向位移(X2-X1)的距離,使該具第一波長的第一光照射該第一電子元件陣列的第(J+1)行、第K列的該電子元件所在的該第一基板使其被熱解或光解而失去黏性,並使第(J+1)行、第K列的該電子元件選擇性地被剝離並接合於該第二基板的該第二上表面,其中J、K、X2均為自然數,且1

Figure 112119959-A0305-02-0005-139
J
Figure 112119959-A0305-02-0005-140
(M-1),1
Figure 112119959-A0305-02-0005-3
K
Figure 112119959-A0305-02-0005-4
(N-1);以及當該第一電子元件陣列的第K列的該等電子元件全部或部分被選擇性地剝離並接合於該第二基板的該第二上表面後,先使該第一基板重新對準該第二基板,再使該第一基板相對於該第二基板沿該第二軸方向位移(Y2-Y1)的距離,然後使該具第一波長的第一光照射該第一電子元件陣列的第J行、第(K+1)列的該電子元件所在的該第一基板使其被熱解或光解而失去黏性,並使第J行、第(K+1)列的該電子元件選擇性地被剝離並接合於該第二基板的該第二上表面,然後再使該第一基板相對於該第二基板沿該第一軸方向位移(X2-X1)的距離,並使該具第一波長的第一光照射該第一電子元件陣列的第(J+1)行、第(K+1)列的該電子元件所在的該第一基板使其被熱解或光解而失去黏性,並使第(J+1)行、第(K+1)列的該電子元件選擇性地被剝離並接合於該第二基板的該第二上表面,其中Y2為自然數;其中,當位在該第一基板的該等電子元件全 部或部分被選擇性剝離並接合於該第二基板的該第二上表面後,便可在該第二基板的該第二上表面形成該第二電子元件陣列。 In the method for mass transfer of electronic components with adjustable spacing as described above, the step of forming the second electronic component array includes: providing a first light with a first wavelength above the first substrate, and irradiating the first light with the first wavelength on the first substrate where the electronic components in the Jth row and the Kth column of the first electronic component array are located to cause them to be thermally decomposed or photolyzed to lose viscosity, and selectively peeling off the electronic components in the Jth row and the Kth column and bonding them to the second upper substrate of the second substrate; The first substrate is displaced relative to the second substrate along the first axis by a distance of (X2-X1), so that the first light with a first wavelength irradiates the first substrate where the electronic components in the (J+1)th row and the Kth column of the first electronic component array are located, so that the electronic components are thermally decomposed or photodecomposed to lose viscosity, and the electronic components in the (J+1)th row and the Kth column are selectively peeled off and bonded to the second upper surface of the second substrate, wherein J, K, and X2 are all natural numbers, and 1
Figure 112119959-A0305-02-0005-139
J
Figure 112119959-A0305-02-0005-140
(M-1), 1
Figure 112119959-A0305-02-0005-3
K
Figure 112119959-A0305-02-0005-4
(N-1); and after all or part of the electronic components in the Kth row of the first electronic component array are selectively peeled off and bonded to the second upper surface of the second substrate, the first substrate is first realigned with the second substrate, and then the first substrate is displaced by a distance (Y2-Y1) relative to the second substrate along the second axis direction, and then the first light with a first wavelength is irradiated on the first substrate where the electronic components in the Jth row and (K+1)th column of the first electronic component array are located, so that the electronic components are thermally decomposed or photolyzed to lose viscosity, and the electronic components in the Jth row and (K+1)th column are selectively peeled off and bonded to the second upper surface of the second substrate, and then the first substrate is The plate is displaced a distance (X2-X1) relative to the second substrate along the first axis direction, and the first light with a first wavelength irradiates the first substrate where the electronic components in the (J+1)th row and (K+1)th column of the first electronic component array are located, so that they are thermally decomposed or photolyzed to lose viscosity, and the electronic components in the (J+1)th row and (K+1)th column are selectively peeled off and bonded to the second upper surface of the second substrate, wherein Y2 is a natural number; wherein, when all or part of the electronic components located on the first substrate are selectively peeled off and bonded to the second upper surface of the second substrate, the second electronic component array can be formed on the second upper surface of the second substrate.

如前所述的可調整間距的巨量轉移電子元件的方法,其中該第二電子元件陣列的形成步驟,包括:提供一具第一波長的第一光於該第一基板上方,並使該具第一波長的第一光照射該第一電子元件陣列的第J行、第K列的該電子元件所在的該第一基板使其被熱解或光解而失去黏性,並使第J行、第K列的該電子元件選擇性地被剝離並接合於該第二基板的該第二上表面,然後使該第一基板相對於該第二基板沿該第二軸方向位移(Y2-Y1)的距離,使該具第一波長的第一光照射該第一電子元件陣列的第J行、第(K+1)列的該電子元件所在的該第一基板使其被熱解或光解而失去黏性,並使第J行、第(K+1)列的該電子元件選擇性地被剝離並接合於該第二基板的該第二上表面,其中J、K、Y2均為自然數,且1

Figure 112119959-A0305-02-0006-141
J
Figure 112119959-A0305-02-0006-142
(M-1),1
Figure 112119959-A0305-02-0006-7
K
Figure 112119959-A0305-02-0006-143
(N-1);以及當該第一電子元件陣列的第J行的該等電子元件全部或部分被選擇性地剝離並接合於該第二基板的該第二上表面後,先使該第一基板重新對準該第二基板,再使該第一基板相對於該第二基板沿該第一軸方向位移(X2-X1)的距離,然後使該具第一波長的第一光照射該第一電子元件陣列的第(J+1)行、第K列的該電子元件所在的該第一基板使其被熱解或光解而失去黏性,並使第(J+1)行、第K列的該電子元件選擇性地被剝離並接合於該第二基板的該第二上表面,然後再使該第一基板相對於該第二基板沿該第二軸方向位移(Y2-Y1)的距離,並使該具第一波長的第一光照射該第一電子元件陣列的第(J+1)行、第(K+1)列的該電子元件所在的該第一基板使其被熱解或光解而失去黏性,並使第(J+1)行、第(K+1)列的該電子元件選擇性地被剝離並接合於該第二基板的該第二上表面,其中X2為自然數;其中,當位在該第一基板的該等電子元件全部或部分被選擇性剝離並接合於該第二基板的該第二上表面後,便可在該第二基板的該第二上表面形成該第二電子元件陣列。 In the method for mass transfer of electronic components with adjustable spacing as described above, the step of forming the second electronic component array includes: providing a first light with a first wavelength above the first substrate, and irradiating the first light with the first wavelength on the first substrate where the electronic components in the Jth row and the Kth column of the first electronic component array are located to cause them to be thermally decomposed or photolyzed to lose viscosity, and selectively peeling off the electronic components in the Jth row and the Kth column and bonding them to the second upper substrate of the second substrate; The first substrate is displaced relative to the second substrate along the second axis by a distance (Y2-Y1), so that the first light with a first wavelength irradiates the first substrate where the electronic components in the Jth row and the (K+1)th column of the first electronic component array are located, so that the electronic components are thermally decomposed or photolyzed to lose viscosity, and the electronic components in the Jth row and the (K+1)th column are selectively peeled off and bonded to the second upper surface of the second substrate, wherein J, K, and Y2 are all natural numbers, and 1
Figure 112119959-A0305-02-0006-141
J
Figure 112119959-A0305-02-0006-142
(M-1), 1
Figure 112119959-A0305-02-0006-7
K
Figure 112119959-A0305-02-0006-143
(N-1); and after all or part of the electronic components in the Jth row of the first electronic component array are selectively peeled off and bonded to the second upper surface of the second substrate, the first substrate is first realigned with the second substrate, and then the first substrate is displaced by a distance (X2-X1) relative to the second substrate along the first axis direction, and then the first light with a first wavelength is irradiated on the first substrate where the electronic components in the (J+1)th row and the Kth column of the first electronic component array are located, so that the first substrate is thermally decomposed or photolyzed to lose its viscosity, and the electronic components in the (J+1)th row and the Kth column are selectively peeled off and bonded to the second upper surface of the second substrate, and then the first substrate is The plate is displaced by a distance (Y2-Y1) relative to the second substrate along the second axial direction, and the first light with a first wavelength irradiates the first substrate where the electronic components in the (J+1)th row and (K+1)th column of the first electronic component array are located, so that they are thermally decomposed or photolyzed to lose viscosity, and the electronic components in the (J+1)th row and (K+1)th column are selectively peeled off and bonded to the second upper surface of the second substrate, wherein X2 is a natural number; wherein, when all or part of the electronic components located on the first substrate are selectively peeled off and bonded to the second upper surface of the second substrate, the second electronic component array can be formed on the second upper surface of the second substrate.

如前所述的可調整間距的巨量轉移電子元件的方法,其中該第一基板為一熱解膠膜,且該具第一波長的第一光為一波長介於100奈米至12000奈米的光。 The method for mass transfer of electronic components with adjustable spacing as described above, wherein the first substrate is a pyrolytic adhesive film, and the first light with a first wavelength is a light with a wavelength between 100 nanometers and 12,000 nanometers.

如前所述的可調整間距的巨量轉移電子元件的方法,其中該第一基板為一光解膠膜,且該具第一波長的第一光為一波長介於100奈米至12000奈米的光。 The method for mass transfer of electronic components with adjustable spacing as described above, wherein the first substrate is a photoresist film, and the first light with a first wavelength is a light with a wavelength between 100 nanometers and 12,000 nanometers.

如前所述的可調整間距的巨量轉移電子元件的方法,其中該等電子元件為選自一個以上由發光二極體、雷射二極體及半導體元件所構成之群組,其中該等發光二極體所發出的光為紅光、綠光、藍光、黃光、白光、紅外光或紫外光;其中該等雷射二極體的波長介於390奈米至1700奈米;其中該等半導體元件為選自一個以上由處理器、記憶體IC、微元件IC、邏輯IC及類比IC所構成的群組。 The method of mass transferring electronic components with adjustable spacing as described above, wherein the electronic components are selected from one or more groups consisting of light-emitting diodes, laser diodes and semiconductor components, wherein the light emitted by the light-emitting diodes is red light, green light, blue light, yellow light, white light, infrared light or ultraviolet light; wherein the wavelength of the laser diodes is between 390 nanometers and 1700 nanometers; wherein the semiconductor components are selected from one or more groups consisting of processors, memory ICs, micro-component ICs, logic ICs and analog ICs.

本發明揭示另一種可調整間距的巨量轉移電子元件的方法,其步驟包括:提供一第一基板,該第一基板具有相對的第一上表面與第一下表面,其中該第一基板的該第一上表面具有複數個電子元件,且該等電子元件分別沿第一軸方向與第二軸方向排列,形成一個由M行電子元件乘以N列電子元件排列所形成的第一電子元件陣列,其中,該第一軸方向與該第二軸方向實質互相垂直,M、N為大於1的自然數,且該第一電子元件陣列之行距、列距分別為X1、Y1,且X1、Y1>0;提供一第二基板,並將該第二基板設置於該第一基板下方,該第二基板具有相對的第二上表面與第二下表面,且該第一基板的該第一上表面面向該第二基板的該第二上表面;以及將位在該第一基板的該等電子元件全部或部分轉移至該第二基板,並在該第二基板形成一第二電子元件陣列,且該第二電子元件陣列之行距與列距分別為X1、Y2或X2、Y1,其中X2、Y2>0,且X1≠X2,Y1≠Y2。 The present invention discloses another method for mass transfer of electronic components with adjustable spacing, the steps of which include: providing a first substrate, the first substrate having a first upper surface and a first lower surface opposite to each other, wherein the first upper surface of the first substrate has a plurality of electronic components, and the electronic components are arranged along a first axis direction and a second axis direction, respectively, to form a first electronic component array formed by arranging M rows of electronic components by N columns of electronic components, wherein the first axis direction and the second axis direction are substantially perpendicular to each other, M and N are natural numbers greater than 1, and the row spacing and column spacing of the first electronic component array are respectively X1, Y1, and X1, Y1>0; provide a second substrate, and set the second substrate below the first substrate, the second substrate has a second upper surface and a second lower surface opposite to each other, and the first upper surface of the first substrate faces the second upper surface of the second substrate; and transfer all or part of the electronic components located on the first substrate to the second substrate, and form a second electronic component array on the second substrate, and the row spacing and column spacing of the second electronic component array are X1, Y2 or X2, Y1, respectively, wherein X2, Y2>0, and X1≠X2, Y1≠Y2.

如前所述的另一種可調整間距的巨量轉移電子元件的方法,其中該第二電子元件陣列之行距與列距分別為X1、Y2,且該第二電子元件陣列的形成步驟,包括:提供一具第一波長的第一光於該第一基板上方,並使該具第一波長的第一光照射該第一電子元件陣列的第K列的該等電子元件所在的該第一基板,使其熱解或光解而失去黏性,並使第K列的該等電子元件全部被剝離並接合於該第二基板的該第二上表面;以及使該第一基板相對於該第二基板沿該第二軸方向位移(Y2-Y1)的距離,然後使該具第一波長的第一光照射該第一電子元件陣列的第(K+1)列的該等電子元件所在的該第一基板,使其被熱解或光解而失去黏性,並使第(K+1)列的該等電子元件全部或部分被剝離並接合於該第二基板的該第二上表面,K為自然數,且1

Figure 112119959-A0305-02-0008-9
K
Figure 112119959-A0305-02-0008-10
(N-1);其中,當位在該第一基板的該等電子元件全部或部分被選擇性剝離並接合於該第二基板的該第二上表面後,便可在該第二基板形成該第二電子元件陣列。 Another method for mass transfer of electronic components with adjustable spacing as described above, wherein the row spacing and column spacing of the second electronic component array are X1 and Y2 respectively, and the steps of forming the second electronic component array include: providing a first light with a first wavelength above the first substrate, and irradiating the first light with the first wavelength on the first substrate where the electronic components of the Kth column of the first electronic component array are located, so that the electronic components of the Kth column are thermally decomposed or photolyzed to lose viscosity, and all the electronic components of the Kth column are peeled off. The first substrate is displaced relative to the second substrate by a distance (Y2-Y1) along the second axis direction, and then the first light having a first wavelength is irradiated on the first substrate where the electronic components in the (K+1)th column of the first electronic component array are located, so that the electronic components are thermally decomposed or photolyzed to lose viscosity, and the electronic components in the (K+1)th column are completely or partially peeled off and bonded to the second upper surface of the second substrate, where K is a natural number, and 1
Figure 112119959-A0305-02-0008-9
K
Figure 112119959-A0305-02-0008-10
(N-1); wherein, when all or part of the electronic components located on the first substrate are selectively peeled off and bonded to the second upper surface of the second substrate, the second electronic component array can be formed on the second substrate.

如前所述的另一種可調整間距的巨量轉移電子元件的方法,且更包括下列步驟:提供一第三基板,並將該第三基板設置於該第二基板下方,該第三基板具有相對的第三上表面與第三下表面,且該第二基板的該第二上表面面向該第三基板的該第三上表面;以及將位在該第二基板的該等電子元件全部或部分轉移至該第三基板,並在該第三基板形成一個第三電子元件陣列,且該第三電子元件陣列之行距與列距分別為X2、Y2。 Another method for mass transfer of electronic components with adjustable spacing as described above further includes the following steps: providing a third substrate and placing the third substrate below the second substrate, the third substrate having a third upper surface and a third lower surface opposite to each other, and the second upper surface of the second substrate faces the third upper surface of the third substrate; and transferring all or part of the electronic components located on the second substrate to the third substrate, and forming a third electronic component array on the third substrate, and the row spacing and column spacing of the third electronic component array are X2 and Y2 respectively.

如前所述的另一種可調整間距的巨量轉移電子元件的方法,其中該第三電子元件陣列的形成步驟,包括:提供一具第二波長的第二光於該第二基板上方,並使該具第二波長的第二光照射該第二電子元件陣列的第J行的該等電子元件所在的該第二基板,使該第二基板被熱解或光解失去黏性,並使第J行的該等電子元件全部或部分被剝離並接合於該第三基板的該第三上表面;以及使該第二基板相對於該第三基板沿該第一軸方向位移(X2-X1)的距離,然後使該具 第二波長的第二光照射該第二電子元件陣列的第(J+1)行的該等電子元件所在的該第二基板,使該第二基板被熱解或光解而失去黏性,並使第(J+1)行的該等電子元件全部或部分被剝離並接合於該第三基板的該第三上表面,J為自然數,且1

Figure 112119959-A0305-02-0009-11
J
Figure 112119959-A0305-02-0009-144
(M-1);其中,當位在該第二基板的該等電子元件全部或部分被選擇性剝離並接合於該第三基板的該第三上表面後,便可在該第三基板形成該第三電子元件陣列。 Another method for mass transfer of electronic components with adjustable spacing as described above, wherein the step of forming the third electronic component array includes: providing a second light with a second wavelength above the second substrate, and irradiating the second light with the second wavelength on the second substrate where the electronic components of the Jth row of the second electronic component array are located, so that the second substrate is thermally decomposed or photodecomposed to lose viscosity, and the electronic components of the Jth row are completely or partially peeled off and bonded to the third substrate. the third upper surface; and displacing the second substrate relative to the third substrate along the first axis direction by a distance of (X2-X1), and then irradiating the second substrate where the electronic components of the (J+1)th row of the second electronic component array are located with the second light having the second wavelength, so that the second substrate is thermally decomposed or photolyzed to lose viscosity, and the electronic components of the (J+1)th row are completely or partially peeled off and bonded to the third upper surface of the third substrate, where J is a natural number, and 1
Figure 112119959-A0305-02-0009-11
J
Figure 112119959-A0305-02-0009-144
(M-1); wherein, when all or part of the electronic components located on the second substrate are selectively peeled off and bonded to the third upper surface of the third substrate, the third electronic component array can be formed on the third substrate.

如前所述的另一種可調整間距的巨量轉移電子元件的方法,其中該第二電子元件陣列之行距與列距分別為X2、Y1,且該第二電子元件陣列的形成步驟,包括:提供一具第一波長的第一光於該第一基板上方,並使該具第一波長的第一光照射該第一電子元件陣列的第J行的該等電子元件所在的該第一基板,使其熱解或光解而失去黏性,並使第J行的該等電子元件全部或部分被剝離並接合於該第二基板的該第二上表面;以及使該第一基板相對於該第二基板沿該第一軸方向位移(X2-X1)的距離,然後使該具第一波長的第一光照射該第一電子元件陣列的第(J+1)行的該等電子元件所在的該第一基板,使其被熱解或光解而失去黏性,並使第(J+1)行的該等電子元件全部或部分被剝離並接合於該第二基板200的該第二上表面200A,J為自然數,且1

Figure 112119959-A0305-02-0009-145
J
Figure 112119959-A0305-02-0009-146
(M-1);其中,當位在該第一基板的該等電子元件全部或部分被選擇性剝離並接合於該第二基板200的該第二上表面200A後,便可在該第二基板形成該第二電子元件陣列。 Another method for mass transfer of electronic components with adjustable spacing as described above, wherein the row spacing and column spacing of the second electronic component array are X2 and Y1 respectively, and the step of forming the second electronic component array includes: providing a first light with a first wavelength above the first substrate, and irradiating the first light with the first wavelength on the first substrate where the electronic components of the Jth row of the first electronic component array are located, causing the first light to thermally decompose or photodecompose to lose viscosity, and causing all or part of the electronic components of the Jth row to be peeled off and The first substrate is displaced relative to the second substrate along the first axis by a distance of (X2-X1), and then the first light having a first wavelength is irradiated on the first substrate where the electronic components of the (J+1)th row of the first electronic component array are located, so that the electronic components are thermally decomposed or photolyzed to lose viscosity, and the electronic components of the (J+1)th row are completely or partially peeled off and bonded to the second upper surface 200A of the second substrate 200, where J is a natural number and 1
Figure 112119959-A0305-02-0009-145
J
Figure 112119959-A0305-02-0009-146
(M-1); wherein, when all or part of the electronic components located on the first substrate are selectively peeled off and bonded to the second upper surface 200A of the second substrate 200, the second electronic component array can be formed on the second substrate.

如前所述的另一種可調整間距的巨量轉移電子元件的方法,且更包括下列步驟:提供一第三基板,並將該第三基板設置於該第二基板下方,該第三基板具有相對的第三上表面與第三下表面,且該第二基板的該第二上表面面向該第三基板的該第三上表面;以及將位在該第二基板的該等電子元件全部或部分轉移至該第三基板,並在該第三基板形成一第三電子元件陣列,且該第三電子元件陣列之行距與列距分別為X2、Y2。 Another method for mass transfer of electronic components with adjustable spacing as described above further includes the following steps: providing a third substrate and placing the third substrate below the second substrate, the third substrate having a third upper surface and a third lower surface opposite to each other, and the second upper surface of the second substrate faces the third upper surface of the third substrate; and transferring all or part of the electronic components located on the second substrate to the third substrate, and forming a third electronic component array on the third substrate, and the row spacing and column spacing of the third electronic component array are X2 and Y2 respectively.

如前所述的另一種可調整間距的巨量轉移電子元件的方法,其中該第三電子元件陣列的形成步驟,包括:提供一具第二波長的第二光於該第二基板上方,並使該具第二波長的第二光照射該第二電子元件陣列的第K列的該等電子元件所在的該第二基板,使該第二基板被熱解或光解失去黏性,並使第J行的該等電子元件全部或部分被剝離並接合於該第三基板的該第三上表面;以及使該第二基板相對於該第三基板沿該第二軸方向位移(Y2-Y1)的距離,然後使該具第二波長的第二光照射該第二電子元件陣列的第(K+1)列的該等電子元件所在的該第二基板,使該第二基板被熱解或光解而失去黏性,並使第(K+1)列的該等電子元件全部或部分被剝離並接合於該第三基板的該第三上表面,K為自然數,且1

Figure 112119959-A0305-02-0010-15
K
Figure 112119959-A0305-02-0010-147
(N-1);其中,當位在該第二基板的該等電子元件全部或部分被選擇性剝離並接合於該第三基板的該第三上表面後,便可在該第三基板形成該第三電子元件陣列。 Another method for mass transfer of electronic components with adjustable spacing as described above, wherein the step of forming the third electronic component array includes: providing a second light with a second wavelength above the second substrate, and irradiating the second light with the second wavelength on the second substrate where the electronic components in the Kth row of the second electronic component array are located, so that the second substrate is thermally decomposed or photodecomposed to lose viscosity, and the electronic components in the Jth row are completely or partially peeled off and bonded to the third substrate. the third upper surface; and displacing the second substrate relative to the third substrate along the second axis direction by a distance of (Y2-Y1), and then irradiating the second substrate where the electronic components of the (K+1)th column of the second electronic component array are located with the second light having the second wavelength, so that the second substrate is thermally decomposed or photolyzed to lose viscosity, and the electronic components of the (K+1)th column are completely or partially peeled off and bonded to the third upper surface of the third substrate, K is a natural number, and 1
Figure 112119959-A0305-02-0010-15
K
Figure 112119959-A0305-02-0010-147
(N-1); wherein, when all or part of the electronic components located on the second substrate are selectively peeled off and bonded to the third upper surface of the third substrate, the third electronic component array can be formed on the third substrate.

如前所述的另一種可調整間距的巨量轉移電子元件的方法,其中該第一基板為一熱解膠膜,且該具第一波長的第一光為一波長介於100奈米至12000奈米的光。 Another method for mass transfer of electronic components with adjustable spacing as described above, wherein the first substrate is a pyrolytic adhesive film, and the first light with a first wavelength is a light with a wavelength between 100 nanometers and 12,000 nanometers.

如前所述的另一種可調整間距的巨量轉移電子元件的方法,其中該第一基板為一光解膠膜,且該具第一波長的第一光為一波長介於100奈米至12000奈米的光。 Another method for mass transfer of electronic components with adjustable spacing as described above, wherein the first substrate is a photoresist film, and the first light with a first wavelength is a light with a wavelength between 100 nanometers and 12,000 nanometers.

如前所述的另一種可調整間距的巨量轉移電子元件的方法,其中該第二基板為一熱解膠膜,且該具第二波長的第二光為一波長介於100奈米至12000奈米的光。 Another method for mass transfer of electronic components with adjustable spacing as described above, wherein the second substrate is a pyrolytic adhesive film, and the second light with a second wavelength is a light with a wavelength between 100 nanometers and 12,000 nanometers.

如前所述的另一種可調整間距的巨量轉移電子元件的方法,其中該第二基板為一光解膠膜,且該具第二波長的第二光為一波長介於100奈米至12000奈米的光。 Another method for mass transfer of electronic components with adjustable spacing as described above, wherein the second substrate is a photoresist film, and the second light with a second wavelength is a light with a wavelength between 100 nanometers and 12,000 nanometers.

如前所述的另一種可調整間距的巨量轉移電子元件的方法,其中該等電子元件為選自一個以上由發光二極體、雷射二極體及半導體元件所構成之群組,其中該等發光二極體所發出的光為紅光、綠光、藍光、黃光、白光、紅外光或紫外光;其中該等雷射二極體的波長介於390奈米至1700奈米;其中該等半導體元件為選自一個以上由處理器、記憶體IC、微元件IC、邏輯IC及類比IC所構成的群組。 Another method of mass transferring electronic components with adjustable spacing as described above, wherein the electronic components are selected from one or more groups consisting of LEDs, laser diodes and semiconductor components, wherein the light emitted by the LEDs is red light, green light, blue light, yellow light, white light, infrared light or ultraviolet light; wherein the wavelength of the laser diodes is between 390 nanometers and 1700 nanometers; wherein the semiconductor components are selected from one or more groups consisting of processors, memory ICs, micro-component ICs, logic ICs and analog ICs.

本發明揭示再一種可調整間距的巨量轉移電子元件的方法,其步驟包括:提供一第一基板,該第一基板具有相對的第一上表面與第一下表面,其中該第一基板的該第一上表面具有複數個電子元件(1211~12NM),且該等電子元件分別沿第一軸方向與第二軸方向排列,形成一個由M行電子元件乘以N列電子元件排列所形成的第一電子元件陣列,其中,該第一軸方向與該第二軸方向實質互相垂直,M、N為大於1的自然數,且該第一電子元件陣列之行距、列距分別為X1、Y1,且X1、Y1>0;提供一第二基板,並將該第二基板設置於該第一基板下方,該第二基板具有相對的第二上表面與第二下表面,且該第一基板的該第一上表面面向該第二基板的該第二上表面;以及將位在該第一基板的該等電子元件轉移至該第二基板,並在該第二基板的該第二上表面形成一個由P行電子元件乘以Q列電子元件排列所形成的第二電子元件陣列,其中P、Q為大於1的自然數,P≠M及/或Q≠N。 The present invention discloses another method for mass transfer of electronic components with adjustable spacing, the steps of which include: providing a first substrate, the first substrate having a first upper surface and a first lower surface opposite to each other, wherein the first upper surface of the first substrate has a plurality of electronic components (1211-12NM), and the electronic components are arranged along a first axis direction and a second axis direction respectively to form a first electronic component array formed by arranging M rows of electronic components by N columns of electronic components, wherein the first axis direction and the second axis direction are substantially perpendicular to each other, M and N are natural numbers greater than 1, and the first electronic component array The row spacing and column spacing of the row are X1 and Y1 respectively, and X1 and Y1>0; a second substrate is provided and arranged below the first substrate, the second substrate has a second upper surface and a second lower surface opposite to each other, and the first upper surface of the first substrate faces the second upper surface of the second substrate; and the electronic components located on the first substrate are transferred to the second substrate, and a second electronic component array formed by arranging P rows of electronic components and Q columns of electronic components is formed on the second upper surface of the second substrate, wherein P and Q are natural numbers greater than 1, P≠M and/or Q≠N.

如前所述的再一種可調整間距的巨量轉移電子元件的方法,其中該第二電子元件陣列之列距為Y2,Y2>0且Y1≠Y2。 As described above, there is another method for mass transfer of electronic components with adjustable spacing, wherein the row spacing of the second electronic component array is Y2, Y2>0 and Y1≠Y2.

如前所述的再一種可調整間距的巨量轉移電子元件的方法,其中該第二電子元件陣列之形成步驟,包括:將位在該第一基板的第R1列的該等電子元件作為該第一基板沿該第一軸方向的一第一基準線,將位在該第二基板的第R2列的該等電子元件作為該第二基板沿該第一軸方向的一第二基準線,並使 該第一基準線對準該第二基準線;以及提供一具第一波長的第一光於該第一基板上方,使該具第一波長的第一光照射位在該第一電子元件陣列的第N1列的該或該等電子元件所在的該第一基板,使其被熱解或光解而失去黏性,並使位在該第一基板的第N1列的該或該等電子元件被選擇性剝離,並接合至該第二基板的該第二上表面,使其位在第二電子元件陣列的第N2列,其中R1、R2、N1、N2為自然數,N1

Figure 112119959-A0305-02-0012-17
N,N2
Figure 112119959-A0305-02-0012-18
Q,且1
Figure 112119959-A0305-02-0012-19
R1
Figure 112119959-A0305-02-0012-20
N1,1
Figure 112119959-A0305-02-0012-21
R2
Figure 112119959-A0305-02-0012-22
N2;其中,當位在該第一基板的該第一電子元件陣列的第N1列的該或該等電子元件被轉移至該第二基板的該第二電子元件陣列的第N2列時,其沿該第二軸方向的相對移動距離為[(N2-R2)*Y2-(N1-R1)*Y1]。 As described above, there is another method for mass transfer of electronic components with adjustable spacing, wherein the step of forming the second electronic component array includes: using the electronic components located in the R1th row of the first substrate as a first reference line of the first substrate along the first axis direction, using the electronic components located in the R2th row of the second substrate as a second reference line of the second substrate along the first axis direction, and aligning the first reference line with the second reference line; and providing a first wavelength A first light is applied above the first substrate, so that the first light with a first wavelength irradiates the first substrate where the electronic components in the N1th row of the first electronic component array are located, so that the electronic components are thermally decomposed or photolyzed to lose viscosity, and the electronic components in the N1th row of the first substrate are selectively peeled off and bonded to the second upper surface of the second substrate, so that the electronic components are located in the N2th row of the second electronic component array, wherein R1, R2, N1, and N2 are natural numbers, and N1 is
Figure 112119959-A0305-02-0012-17
N, N2
Figure 112119959-A0305-02-0012-18
Q, and 1
Figure 112119959-A0305-02-0012-19
R1
Figure 112119959-A0305-02-0012-20
N1,1
Figure 112119959-A0305-02-0012-21
R2
Figure 112119959-A0305-02-0012-22
N2; wherein, when the electronic components located in the N1th row of the first electronic component array of the first substrate are transferred to the N2th row of the second electronic component array of the second substrate, the relative movement distance along the second axis direction is [(N2-R2)*Y2-(N1-R1)*Y1].

如前所述的再一種可調整間距的巨量轉移電子元件的方法,且更包括下列步驟:提供一第三基板,並將該第三基板設置於該第二基板下方,該第三基板具有相對的第三上表面與第三下表面,且該第二基板的該第二上表面面向該第三基板的該第三上表面;以及將位在該第二基板的該第二電子元件陣列轉移至該第三基板,並在該第三基板形成一個由U行電子元件乘以V列電子元件排列所形成的第三電子元件陣列,且該第三電子元件陣列之行距與列距分別為X2、Y2,其中U、V為大於1的自然數。 Another method for mass transfer of electronic components with adjustable spacing as described above further includes the following steps: providing a third substrate and placing the third substrate below the second substrate, the third substrate having a third upper surface and a third lower surface opposite to each other, and the second upper surface of the second substrate faces the third upper surface of the third substrate; and transferring the second electronic component array located on the second substrate to the third substrate, and forming a third electronic component array formed by U rows of electronic components multiplied by V columns of electronic components on the third substrate, and the row spacing and column spacing of the third electronic component array are X2 and Y2 respectively, where U and V are natural numbers greater than 1.

如前所述的再一種可調整間距的巨量轉移電子元件的方法,其中該第三電子元件陣列之形成步驟,包括:將位在該第二基板的第S1行的該等電子元件作為該第二基板沿該第二軸方向的一第三基準線,將位在該第三基板的第S2行的該等電子元件作為該第三基板沿該第二軸方向的一第四基準線,並使該第三基準線對準該第四基準線;以及提供一具第二波長的第二光於該第二基板上方,使該具第二波長的第二光照射位在該第二電子元件陣列的第M1行的該或該等電子元件所在的該第二基板,使其被熱解或光解而失去黏性且將位在該第二基板的第M1行的該或該等電子元件被選擇性剝離,並接合至該第三基板的該 第三上表面,使其位在第三電子元件陣列的第M2列,其中S1、S2、M1、M2為自然數,M1

Figure 112119959-A0305-02-0013-23
M,M2
Figure 112119959-A0305-02-0013-24
U,且1
Figure 112119959-A0305-02-0013-25
S1
Figure 112119959-A0305-02-0013-26
M1,1
Figure 112119959-A0305-02-0013-27
S2
Figure 112119959-A0305-02-0013-28
M2;其中,當位在該第二基板的該第二電子元件陣列的第M1行的該或該等電子元件被轉移至該第三基板的該第三電子元件陣列的第M2行時,其沿該第一軸方向的相對移動距離為[(M2-S2)*X2-(M1-S1)*X1]。 As described above, there is another method for mass transfer of electronic components with adjustable spacing, wherein the step of forming the third electronic component array includes: using the electronic components located in the S1th row of the second substrate as a third reference line of the second substrate along the second axis direction, using the electronic components located in the S2th row of the third substrate as a fourth reference line of the third substrate along the second axis direction, and aligning the third reference line with the fourth reference line; and providing a second wavelength A second light having a second wavelength is directed above the second substrate, so that the second light having a second wavelength irradiates the second substrate where the electronic components located in the M1th row of the second electronic component array are located, so that the electronic components are thermally decomposed or photolyzed to lose viscosity and the electronic components located in the M1th row of the second substrate are selectively peeled off and bonded to the third upper surface of the third substrate so that the electronic components are located in the M2th row of the third electronic component array, wherein S1, S2, M1, and M2 are natural numbers, and M1 is
Figure 112119959-A0305-02-0013-23
M, M2
Figure 112119959-A0305-02-0013-24
U, and 1
Figure 112119959-A0305-02-0013-25
S1
Figure 112119959-A0305-02-0013-26
M1,1
Figure 112119959-A0305-02-0013-27
S2
Figure 112119959-A0305-02-0013-28
M2; wherein, when the electronic components located in the M1th row of the second electronic component array of the second substrate are transferred to the M2th row of the third electronic component array of the third substrate, the relative movement distance along the first axis direction is [(M2-S2)*X2-(M1-S1)*X1].

如前所述的再一種可調整間距的巨量轉移電子元件的方法,其中該第二電子元件陣列之行距為X2,X2>0且X1≠X2。 As described above, there is another method for mass transfer of electronic components with adjustable spacing, wherein the row spacing of the second electronic component array is X2, X2>0 and X1≠X2.

如前所述的再一種可調整間距的巨量轉移電子元件的方法,其中該第二電子元件陣列之形成步驟,包括:將位在該第一基板的第S1行的該等電子元件作為該第一基板沿該第二軸方向的一第一基準線,將位在該第二基板的第S2行的該等電子元件作為該第二基板沿該第二軸方向的一第二基準線,並使該第一基準線對準該第二基準線;以及提供一具第一波長的第一光於該第一基板上方,使該具第一波長的第一光照射位在該第一電子元件陣列的第M1行的該或該等電子元件所在的該第一基板,使其被熱解或光解而失去黏性且將位在該第一基板的第M1行的該或該等電子元件被選擇性剝離,並接合至該第二基板的該第二上表面,使其位在第二電子元件陣列的第M2列,其中S1、S2、M1、M2為自然數,M1

Figure 112119959-A0305-02-0013-29
M,M2
Figure 112119959-A0305-02-0013-30
P,且1
Figure 112119959-A0305-02-0013-31
S1
Figure 112119959-A0305-02-0013-32
M1,1
Figure 112119959-A0305-02-0013-33
S2
Figure 112119959-A0305-02-0013-34
M2;其中,當位在該第一基板的該第一電子元件陣列的第M1行的該或該等電子元件被轉移至該第二基板的該第二電子元件陣列的第M2行時,其沿該第一軸方向的相對移動距離為[(M2-S2)*X2-(M1-S1)*X1]。 As described above, there is another method for mass transferring electronic components with adjustable spacing, wherein the step of forming the second electronic component array includes: using the electronic components located in the S1th row of the first substrate as a first reference line of the first substrate along the second axis direction, using the electronic components located in the S2th row of the second substrate as a second reference line of the second substrate along the second axis direction, and aligning the first reference line with the second reference line; and providing a first wavelength A first light having a first wavelength is directed above the first substrate, so that the first light having a first wavelength irradiates the first substrate where the electronic components located in the M1th row of the first electronic component array are located, so that the electronic components are thermally decomposed or photolyzed to lose viscosity and the electronic components located in the M1th row of the first substrate are selectively peeled off and bonded to the second upper surface of the second substrate so that the electronic components are located in the M2th row of the second electronic component array, wherein S1, S2, M1, and M2 are natural numbers, and M1 is a first substrate where the electronic components located in the M1th row of the first substrate are selectively peeled off and bonded to the second upper surface of the second substrate so that the electronic components located in the M2th row of the second electronic component array are selectively peeled off and bonded to the second upper surface of the second substrate so that the electronic components located in the M2th row of the second electronic component array are selectively peeled off and bonded to the second upper surface of the second substrate so that the electronic components located in the M2th row of the second electronic component array are selectively peeled off and bonded to the second upper surface of the second substrate so that the electronic components located in the M1th row of the first ...
Figure 112119959-A0305-02-0013-29
M, M2
Figure 112119959-A0305-02-0013-30
P, and 1
Figure 112119959-A0305-02-0013-31
S1
Figure 112119959-A0305-02-0013-32
M1,1
Figure 112119959-A0305-02-0013-33
S2
Figure 112119959-A0305-02-0013-34
M2; wherein, when the electronic components located in the M1th row of the first electronic component array of the first substrate are transferred to the M2th row of the second electronic component array of the second substrate, the relative movement distance along the first axis direction is [(M2-S2)*X2-(M1-S1)*X1].

如前所述的再一種可調整間距的巨量轉移電子元件的方法,且更包括下列步驟:提供一第三基板,並將該第三基板設置於該第二基板下方,該第三基板具有相對的第三上表面與第三下表面,且該第二基板的該第二上表面面向該第三基板的該第三上表面;以及將位在該第二基板的該第二電子元件陣列 轉移至該第三基板,並在該第三基板形成一個由U行電子元件乘以V列電子元件排列所形成的第三電子元件陣列,且該第三電子元件陣列之行距與列距分別為X2、Y2,其中U、V為大於1的自然數。 Another method for mass transfer of electronic components with adjustable spacing as described above further includes the following steps: providing a third substrate and placing the third substrate below the second substrate, the third substrate having a third upper surface and a third lower surface opposite to each other, and the second upper surface of the second substrate facing the third upper surface of the third substrate; and transferring the second electronic component array located on the second substrate to the third substrate, and forming a third electronic component array formed by U rows of electronic components multiplied by V columns of electronic components on the third substrate, and the row spacing and column spacing of the third electronic component array are X2 and Y2 respectively, wherein U and V are natural numbers greater than 1.

如前所述的再一種可調整間距的巨量轉移電子元件的方法,其中該第三電子元件陣列之形成步驟,包括:將位在該第二基板的第R1列的該等電子元件作為該第二基板沿該第一軸方向的一第三基準線,將位在該第三基板的第R2列的該等電子元件作為該第三基板沿該第一軸方向的一第四基準線,並使該第三基準線對準該第四基準線;以及提供一具第二波長的第二光於該第二基板上方,使該具第二波長的第二光照射位在該第二電子元件陣列的第N1列的該或該等電子元件所在的該第二基板,使其被熱解或光解而失去黏性,並使位在該第二基板的第N1列的該或該等電子元件被選擇性剝離,並接合至該第三基板的該第三上表面,使其位在第三電子元件陣列的第N2列,其中R1、R2、N1、N2為自然數,N1

Figure 112119959-A0305-02-0014-35
N,N2
Figure 112119959-A0305-02-0014-36
V,且1
Figure 112119959-A0305-02-0014-37
R1
Figure 112119959-A0305-02-0014-38
N1,1
Figure 112119959-A0305-02-0014-39
R2
Figure 112119959-A0305-02-0014-40
N2;其中,當位在該第二基板的該第二電子元件陣列的第N1列的該或該等電子元件被轉移至該第三基板的該第三電子元件陣列的第N2列時,其沿該第二軸方向的相對移動距離為[(N2-R2)*Y2-(N1-R1)*Y1]。 As described above, there is another method for mass transferring electronic components with adjustable spacing, wherein the step of forming the third electronic component array includes: using the electronic components located in the R1th row of the second substrate as a third reference line of the second substrate along the first axis direction, using the electronic components located in the R2th row of the third substrate as a fourth reference line of the third substrate along the first axis direction, and aligning the third reference line with the fourth reference line; and providing a second wavelength A second light is applied above the second substrate, so that the second light with a second wavelength irradiates the second substrate where the electronic components located in the N1th row of the second electronic component array are located, so that the electronic components are thermally decomposed or photolyzed to lose viscosity, and the electronic components located in the N1th row of the second substrate are selectively peeled off and bonded to the third upper surface of the third substrate, so that the electronic components are located in the N2th row of the third electronic component array, wherein R1, R2, N1, and N2 are natural numbers, and N1 is
Figure 112119959-A0305-02-0014-35
N, N2
Figure 112119959-A0305-02-0014-36
V, and 1
Figure 112119959-A0305-02-0014-37
R1
Figure 112119959-A0305-02-0014-38
N1,1
Figure 112119959-A0305-02-0014-39
R2
Figure 112119959-A0305-02-0014-40
N2; wherein, when the electronic components located in the N1th row of the second electronic component array of the second substrate are transferred to the N2th row of the third electronic component array of the third substrate, the relative movement distance along the second axis direction is [(N2-R2)*Y2-(N1-R1)*Y1].

如前所述的再一種可調整間距的巨量轉移電子元件的方法,其中該第一基板為一熱解膠膜,且該具第一波長的第一光為一波長介於100奈米至12000奈米的光。 As described above, there is another method for mass transfer of electronic components with adjustable spacing, wherein the first substrate is a pyrolytic adhesive film, and the first light with a first wavelength is a light with a wavelength between 100 nanometers and 12,000 nanometers.

如前所述的再一種可調整間距的巨量轉移電子元件的方法,其中該第一基板為一光解膠膜,且該具第一波長的第一光為一波長介於100奈米至12000奈米的光。 As described above, there is another method for mass transfer of electronic components with adjustable spacing, wherein the first substrate is a photoresist film, and the first light with a first wavelength is a light with a wavelength between 100 nanometers and 12,000 nanometers.

如前所述的再一種可調整間距的巨量轉移電子元件的方法,其中該第二基板為一熱解膠膜,且該具第二波長的第二光為一波長介於100奈米至12000奈米的光。 As described above, there is another method for mass transfer of electronic components with adjustable spacing, wherein the second substrate is a pyrolytic adhesive film, and the second light with a second wavelength is a light with a wavelength between 100 nanometers and 12,000 nanometers.

如前所述的再一種可調整間距的巨量轉移電子元件的方法,其中該第二基板(200)為一光解膠膜,且該具第二波長的第二光為一波長介於100奈米至12000奈米的光。 As described above, there is another method for mass transfer of electronic components with adjustable spacing, wherein the second substrate (200) is a photoresist film, and the second light with a second wavelength is a light with a wavelength between 100 nanometers and 12,000 nanometers.

如前所述的再一種可調整間距的巨量轉移電子元件的方法,其中該等電子元件為選自一個以上由發光二極體、雷射二極體及半導體元件所構成之群組。 As described above, there is another method for mass transfer of electronic components with adjustable spacing, wherein the electronic components are selected from one or more groups consisting of light-emitting diodes, laser diodes and semiconductor components.

如前所述的再一種可調整間距的巨量轉移電子元件的方法,其中該等發光二極體所發出的光為紅光、綠光、藍光、黃光、白光、紅外光或紫外光。 As mentioned above, there is another method for mass transfer of electronic components with adjustable spacing, wherein the light emitted by the light emitting diodes is red light, green light, blue light, yellow light, white light, infrared light or ultraviolet light.

如前所述的再一種可調整間距的巨量轉移電子元件的方法,其中該等雷射二極體的波長介於390奈米至1700奈米。 Another method for mass transfer of electronic components with adjustable spacing as described above, wherein the wavelength of the laser diodes is between 390 nanometers and 1700 nanometers.

如前所述的再一種可調整間距的巨量轉移電子元件的方法,其中該等半導體元件為選自一個以上由處理器、記憶體IC、微元件IC、邏輯IC及類比IC所構成的群組。 As described above, there is another method for mass transferring electronic components with adjustable spacing, wherein the semiconductor components are selected from one or more groups consisting of processors, memory ICs, micro-component ICs, logic ICs, and analog ICs.

10:暫時基板 10: Temporary substrate

10A:第一上表面 10A: First upper surface

10B:第一下表面 10B: first lower surface

12:電子元件 12: Electronic components

20:目標基板 20: Target substrate

20A:第二上表面 20A: Second upper surface

20B:第二下表面 20B: Second lower surface

100:第一基板 100: First substrate

100A:第一上表面 100A: First upper surface

100B:第一下表面 100B: first lower surface

110、110’:第一基準線 110, 110’: The first baseline

1211~121J、121M、1221~122J、122M、12K1~12KJ、12KM、12N1~12NJ、12NM、12(N1)1~12(N1)J、12(N1)M、121(M1)~12N(M1)、121(M1)~12K(M1)、12N(M1):電子元件 1211~121J, 121M, 1221~122J, 122M, 12K1~12KJ, 12KM, 12N1~12NJ, 12NM, 12(N1)1~12(N1)J, 12(N1)M, 121(M1)~12N(M1), 121(M1)~12K(M1), 12N(M1): electronic components

2211~221(j)、221(M2)~22k(M2)、22Q(M2)、221P~22kP、2221~222(j)、222P、22(N2)1~22(N2)j、22(N2)P、22Q1~22Q(J)、22QP:電子元件 2211~221(j), 221(M2)~22k(M2), 22Q(M2), 221P~22kP, 2221~222(j), 222P, 22(N2)1~22(N2)j, 22(N2)P, 22Q1~22Q(J), 22QP: electronic components

3211~321(M2)、321U~32(N2)U、3221~322(M2)、322U、32k1~32k(M2)、32kU、32V1~32V(M2)、3211~321J、321U、33221~322j、322U、2(N2)1~32(N2)j、32(N2)U、32Vj、32VU:電子元件 3211~321(M2), 321U~32(N2)U, 3221~322(M2), 322U, 32k1~32k(M2), 32kU, 32V1~32V( M2), 3211~321J, 321U, 33221~322j, 322U, 2(N2)1~32(N2)j, 32(N2)U, 32Vj, 32VU: electronic components

200:第二基板 200: Second substrate

200A:第二上表面 200A: Second upper surface

200B:第二下表面 200B: Second lower surface

210、210’:第二基準線 210, 210’: Second baseline

300:第三基板 300: Third substrate

300A:第三上表面 300A: The third upper surface

300B:第三下表面 300B: The third lower surface

210、210’:第二基準線 210, 210’: Second baseline

250、250’:第三基準線 250, 250’: The third baseline

350、350’:第四基準線 350, 350’: The fourth baseline

圖1A~1D俯視圖所繪示的是習知一種巨量轉移電子元件的方法。 Figures 1A to 1D are top views showing a known method for mass transfer of electronic components.

圖2A~2H俯視圖是根據本發明實施例一所繪示的一種可調整間距的巨量轉移電子元件的方法。 Figures 2A to 2H are top views of a method for mass transfer of electronic components with adjustable spacing according to Embodiment 1 of the present invention.

圖2A’~2E’俯視圖是根據本發明實施例二所繪示的一種可調整間距的巨量轉移電子元件的方法。 Figures 2A'~2E' are top views showing a method for mass transfer of electronic components with adjustable spacing according to the second embodiment of the present invention.

圖3A~3I俯視圖是根據本發明實施例三所繪示的一種可調整間距的巨量轉移電子元件的方法。 Figures 3A to 3I are top views of a method for mass transfer of electronic components with adjustable spacing according to the third embodiment of the present invention.

圖3A’~3H’俯視圖是根據本發明實施例四所繪示的一種可調整間距的巨量轉移電子元件的方法。 Figures 3A'~3H' are top views of a method for mass transfer of electronic components with adjustable spacing according to the fourth embodiment of the present invention.

圖4A~4E俯視圖是根據本發明實施例五所繪示的一種可調整間距的巨量轉移電子元件的方法。 Figures 4A to 4E are top views of a method for mass transfer of electronic components with adjustable spacing according to Embodiment 5 of the present invention.

圖4A’~4E’俯視圖是根據本發明實施例六所繪示的一種可調整間距的巨量轉移電子元件的方法。 Figures 4A'~4E' are top views of a method for mass transfer of electronic components with adjustable spacing according to Embodiment 6 of the present invention.

為了使本發明揭示內容的敘述更加詳盡與完備,下文針對了本發明的實施態樣與具體實施例提出了說明性的描述;但這並非實施或運用本發明具體實施例的唯一形式。以下所揭露的各實施例,在有益的情形下可相互組合或取代,也可在一實施例中附加其他的實施例,而無須進一步的記載或說明。 In order to make the description of the disclosure of the present invention more detailed and complete, the following provides an illustrative description of the implementation and specific embodiments of the present invention; however, this is not the only form of implementing or using the specific embodiments of the present invention. The embodiments disclosed below can be combined or replaced with each other under beneficial circumstances, and other embodiments can be added to one embodiment without further recording or description.

在以下描述中,將詳細敘述許多特定細節以使讀者能夠充分理解以下的實施例。然而,可在無此等特定細節之情況下實踐本發明之實施例。在其他情況下,為簡化圖式,熟知的結構與裝置僅示意性地繪示於圖中。 In the following description, many specific details will be described in detail to enable the reader to fully understand the following embodiments. However, the embodiments of the present invention can be practiced without these specific details. In other cases, to simplify the drawings, well-known structures and devices are only schematically depicted in the drawings.

實施例 Implementation example

實施例一 Implementation Example 1

以下將參照圖2A~2H俯視圖詳細說明本實施例一所揭示的一種可調整間距的巨量轉移電子元件的方法。 The following will describe in detail a method for mass transfer of electronic components with adjustable spacing disclosed in Example 1 with reference to the top views of Figures 2A to 2H.

首先,請參閱圖2A。如圖2A所示,提供一第一基板100,該第一基板100具有相對的第一上表面100A與第一下表面100B,其中該第一基板100的該第一上表面100A具有複數個電子元件1211~12NM,且該等電子元件 1211~12NM分別沿第一軸方向與第二軸方向排列,形成一個由M行電子元件乘以N列電子元件排列所形成的第一電子元件陣列(未標示),其中,該第一基板100為一熱解膠膜或一光解膠膜,該第一軸方向與該第二軸方向實質互相垂直,M、N為大於1的自然數,且該第一電子元件陣列之行距、列距分別為X1、Y1,且X1、Y1>0。本實施例一是以第一軸方向為X軸方向,第二軸方向為Y軸方向作為例示說明,惟在根據本發明的其它實施例中,也可視需要選擇第一軸方向為Y軸方向,第二軸方向為X軸方向。 First, please refer to FIG. 2A. As shown in FIG. 2A, a first substrate 100 is provided, and the first substrate 100 has a first upper surface 100A and a first lower surface 100B opposite to each other, wherein the first upper surface 100A of the first substrate 100 has a plurality of electronic components 1211~12NM, and the electronic components 1211~12NM are arranged along the first axis direction and the second axis direction, respectively, to form a first electronic component array (not shown) formed by arranging M rows of electronic components by N columns of electronic components, wherein the first substrate 100 is a pyrolytic adhesive film or a photolytic adhesive film, the first axis direction and the second axis direction are substantially perpendicular to each other, M and N are natural numbers greater than 1, and the row spacing and column spacing of the first electronic component array are X1 and Y1, respectively, and X1 and Y1>0. In the first embodiment, the first axis direction is the X axis direction and the second axis direction is the Y axis direction as an example for explanation. However, in other embodiments according to the present invention, the first axis direction can be selected as the Y axis direction and the second axis direction can be selected as the X axis direction as needed.

本實施例一的該等電子元件1211~12NM為例如但不限於選自一個以上由發光二極體、雷射二極體及半導體元件所構成之群組。其中,該等發光二極體為例如但不限於所發出的光為紅光、綠光、藍光、黃光、白光、紅外光或紫外光;該等雷射二極體的波長為例如但不限於介於390奈米至1700奈米;該等半導體元件為為例如但不限於選自一個以上由處理器、記憶體IC、微元件IC、邏輯IC及類比IC所構成的群組。 The electronic components 1211~12NM of the first embodiment are, for example, but not limited to, selected from one or more groups consisting of light-emitting diodes, laser diodes, and semiconductor components. The light-emitting diodes are, for example, but not limited to, emitting red light, green light, blue light, yellow light, white light, infrared light, or ultraviolet light; the wavelength of the laser diodes is, for example, but not limited to, between 390 nanometers and 1700 nanometers; the semiconductor components are, for example, but not limited to, selected from one or more groups consisting of processors, memory ICs, micro-component ICs, logic ICs, and analog ICs.

其次,請參照圖2B。提供一第二基板200,並將該第二基板200設置於該第一基板100下方,該第二基板200具有相對的第二上表面200A與第二下表面200B,且該第一基板100的該第一上表面100A面向該第二基板200的該第二上表面200A。 Next, please refer to FIG. 2B. Provide a second substrate 200, and place the second substrate 200 below the first substrate 100. The second substrate 200 has a second upper surface 200A and a second lower surface 200B opposite to each other, and the first upper surface 100A of the first substrate 100 faces the second upper surface 200A of the second substrate 200.

其次,請參照圖2B~2D。提供一具第一波長的第一光於該第一基板100上方,該具第一波長的第一光為例如但不限於一波長介於100奈米至12000奈米的光,並使該具第一波長的第一光照射該第一電子元件陣列的第J行、第K列的該電子元件12KJ所在的該第一基板100使其被熱解或光解而失去黏性,並使第J行、第K列的該電子元件12KJ選擇性地被剝離並接合於該第二基板200的該第二上表面200A,然後使該第一基板100相對於該第二基板200沿該第一軸方向位移(X2-X1)的距離,使該具第一波長的第一光照射該第一電子元件陣列的第(J+1) 行、第K列的該電子元件12(K+1)J所在的該第一基板100使其被熱解或光解而失去黏性,並使第(J+1)行、第K列的該電子元件選擇性地被剝離並接合於該第二基板200的該第二上表面200A,其中J、K、X2均為自然數,X1≠X2,且1

Figure 112119959-A0305-02-0018-148
J
Figure 112119959-A0305-02-0018-149
(M-1),1
Figure 112119959-A0305-02-0018-43
K
Figure 112119959-A0305-02-0018-44
(N-1)。本實施例一是以第K列的電子元件12K1~12KM全部被選擇性地剝離並接合於該第二基板200的該第二上表面200A作為例示說明,惟根據本發明的其它實施例中,也可視需要使第K列的電子元件12K1~12KM部分被選擇性地剝離並接合於該第二基板200的該第二上表面200A上。 Next, please refer to FIGS. 2B to 2D. A first light with a first wavelength is provided above the first substrate 100. The first light with the first wavelength is, for example but not limited to, a light with a wavelength between 100 nanometers and 12,000 nanometers. The first light with the first wavelength is irradiated on the first substrate 100 where the electronic component 12KJ of the Jth row and the Kth column of the first electronic component array is located, so that the electronic component 12KJ of the Jth row and the Kth column is pyrolyzed or photolyzed to lose its viscosity, and the electronic component 12KJ of the Jth row and the Kth column is selectively peeled off and bonded to the second upper surface 200A of the second substrate 200. Then, the first substrate 100 is displaced by a distance (X2-X1) relative to the second substrate 200 along the first axis direction, so that the first light with the first wavelength is irradiated on the (J+1)th row and the (J+1)th row of the first electronic component array. The first substrate 100 where the electronic component 12(K+1)J of the row and Kth column is located is pyrolyzed or photolyzed to lose its viscosity, and the electronic component of the (J+1)th row and Kth column is selectively peeled off and bonded to the second upper surface 200A of the second substrate 200, wherein J, K, and X2 are all natural numbers, X1≠X2, and 1
Figure 112119959-A0305-02-0018-148
J
Figure 112119959-A0305-02-0018-149
(M-1), 1
Figure 112119959-A0305-02-0018-43
K
Figure 112119959-A0305-02-0018-44
(N-1). In the first embodiment, all the electronic components 12K1-12KM in the Kth column are selectively peeled off and bonded to the second upper surface 200A of the second substrate 200 as an example for explanation. However, in other embodiments of the present invention, part of the electronic components 12K1-12KM in the Kth column may be selectively peeled off and bonded to the second upper surface 200A of the second substrate 200 as needed.

如圖2B所示,當J=1、K=1時,使該具第一波長的第一光沿第一軸方向(X軸方向)照射該第一電子元件陣列的第1行、第1列的電子元件1211所在的該第一基板100使其被熱解或光解而失去黏性,並使第1行、第1列的電子元件1211選擇性地被剝離並接合於該第二基板200的該第二上表面200A。 As shown in FIG. 2B , when J=1 and K=1, the first light with the first wavelength is irradiated along the first axis direction (X axis direction) onto the first substrate 100 where the electronic components 1211 of the first row and first column of the first electronic component array are located, so that the electronic components 1211 of the first row and first column are pyrolyzed or photolyzed to lose their viscosity, and the electronic components 1211 of the first row and first column are selectively peeled off and bonded to the second upper surface 200A of the second substrate 200.

接著,如圖2C~2D所示,使該第一基板100相對於該第二基板200沿該第一軸方向(X軸方向)位移(X2-X1)的距離,使該具第一波長的第一光沿第一軸方向(X軸方向)照射該第一電子元件陣列的第2行、第1列的該電子元件所在的該第一基板100使其被熱解或光解而失去黏性,並使第2行、第1列的電子元件1212選擇性地被剝離並接合於該第二基板200的該第二上表面200A。同理,第1列的其它電子元件1213~121M也可利用前述的相同方法,選擇性地被剝離並接合於該第二基板200的該第二上表面200A。 Next, as shown in FIGS. 2C-2D , the first substrate 100 is displaced by a distance (X2-X1) along the first axis direction (X axis direction) relative to the second substrate 200, so that the first light with the first wavelength irradiates the first substrate 100 where the electronic components of the second row and the first column of the first electronic component array are located along the first axis direction (X axis direction) to cause them to be pyrolyzed or photolyzed to lose their viscosity, and the electronic components 1212 of the second row and the first column are selectively peeled off and bonded to the second upper surface 200A of the second substrate 200. Similarly, the other electronic components 1213-121M of the first column can also be selectively peeled off and bonded to the second upper surface 200A of the second substrate 200 using the same method as described above.

然後,請參照圖2E~2G。當該第一電子元件陣列的第K列的該等電子元件12K1~12KM被選擇性地剝離並接合於該第二基板200的該第二上表面200A後,先使該第一基板100重新對準該第二基板200,其次再使該第一基板100相對於該第二基板200沿該第二軸方向(Y軸方向)位移(Y2-Y1)的距離,Y2>0,且Y1≠Y2,然後再使該具第一波長的第一光照射該第一電子元件陣列的第J行、第(K+1)列的該電子元件12(K+1)J所在的該第一基板100,該具第一波長的第一光為 例如但不限於一波長介於100奈米至12000奈米的光,使其被熱解或光解而失去黏性,並使第J行、第(K+1)列的該電子元件12(K+1)K選擇性地被剝離並接合於該第二基板200的該第二上表面200A。然後,使該第一基板100相對於該第二基板200沿該第一軸方向(X軸方向)位移(X2-X1)的距離,並使該具第一波長的第一光照射該第一電子元件陣列的第(J+1)行、第(K+1)列的該電子元件12(K+1)(J+1)所在的該第一基板100使其被熱解或光解而失去黏性,並使第(J+1)行、第(K+1)列的該電子元件12(K+1)(J+1)選擇性地被剝離並接合於該第二基板200的該第二上表面200A,其中Y2為自然數。當位在該第一基板100的該等電子元件1211~12NM被選擇性剝離並接合於該第二基板200的該第二上表面200A後,便可在該第二基板200的該第二上表面200A形成一第二電子元件陣列(未標示)。本實施例一是以位在第一基板100的第一電子元件陣列(未標示)的電子元件1211~121M全部被選擇性地剝離並接合於該第二基板200的該第二上表面200A,惟根據本發明的其它實施例中,也可視需要使位在第一基板100的第一電子元件陣列(未標示)的電子元件1211~121M部分被選擇性地剝離並接合於該第二基板200的該第二上表面200A上。 Then, please refer to Figures 2E-2G. After the electronic components 12K1-12KM of the Kth row of the first electronic component array are selectively peeled off and bonded to the second upper surface 200A of the second substrate 200, the first substrate 100 is first aligned with the second substrate 200, and then the first substrate 100 is displaced relative to the second substrate 200 along the second axis direction (Y axis direction) by a distance (Y2-Y1), Y2>0, and Y1≠Y2, and then the first light with the first wavelength is irradiated. The first substrate 100 where the electronic component 12(K+1)J in the Jth row and the (K+1)th column of the first electronic component array is located is irradiated with the first light having a first wavelength, for example but not limited to light having a wavelength between 100 nanometers and 12000 nanometers, so that the electronic component 12(K+1)K in the Jth row and the (K+1)th column is pyrolyzed or photolyzed to lose its viscosity, and the electronic component 12(K+1)K in the Jth row and the (K+1)th column is selectively peeled off and bonded to the second upper surface 200A of the second substrate 200. Then, the first substrate 100 is displaced a distance of (X2-X1) along the first axis direction (X axis direction) relative to the second substrate 200, and the first light with the first wavelength is irradiated on the first substrate 100 where the electronic component 12(K+1)(J+1) in the (J+1)th row and (K+1)th column of the first electronic component array is located, so that it is thermally decomposed or photolyzed to lose its viscosity, and the electronic component 12(K+1)(J+1) in the (J+1)th row and (K+1)th column is selectively peeled off and bonded to the second upper surface 200A of the second substrate 200, where Y2 is a natural number. When the electronic components 1211~12NM located on the first substrate 100 are selectively peeled off and bonded to the second upper surface 200A of the second substrate 200, a second electronic component array (not shown) can be formed on the second upper surface 200A of the second substrate 200. In the first embodiment, all the electronic components 1211~121M located on the first electronic component array (not shown) of the first substrate 100 are selectively peeled off and bonded to the second upper surface 200A of the second substrate 200. However, according to other embodiments of the present invention, part of the electronic components 1211~121M located on the first electronic component array (not shown) of the first substrate 100 can also be selectively peeled off and bonded to the second upper surface 200A of the second substrate 200 as needed.

如圖2E所示,當K=1時,且第1列的電子元件1213~121M被選擇性地剝離並接合於該第二基板200的該第二上表面200A後,先使該第一基板100重新對準該第二基板200。其次,使該第一基板100相對於該第二基板200沿該第二軸方向(Y軸方向)位移(Y2-Y1)的距離,然後使該具第一波長的第一光照射該第一電子元件陣列的第2列、第1行的電子元件1221所在的該第一基板100使其被熱解或光解而失去黏性,並使第2列、第1行的電子元件1221選擇性地被剝離並接合於該第二基板200的該第二上表面200A。然後,如圖2F所示,使該第一基板100相對於該第二基板200沿該第一軸方向(X軸方向)位移(X2-X1)的距離,並使該具第一波長的第一光照射該第一電子元件陣列的第2列、第2行的電子元件1222所 在的該第一基板100使其被熱解或光解而失去黏性,並使第2列、第2行的電子元件1222選擇性地被剝離並接合於該第二基板200的該第二上表面200A。同理,如圖2G所示,第3~M行的其它電子元件1223~122M也可利用前述的相同方法,選擇性地被剝離並接合於該第二基板200的該第二上表面200A。 As shown in FIG. 2E , when K=1, and after the electronic components 1213-121M in the first row are selectively peeled off and bonded to the second upper surface 200A of the second substrate 200, the first substrate 100 is first realigned with the second substrate 200. Next, the first substrate 100 is displaced by a distance (Y2-Y1) along the second axis direction (Y axis direction) relative to the second substrate 200, and then the first light with a first wavelength is irradiated on the first substrate 100 where the electronic components 1221 in the second row and the first line of the first electronic component array are located, so that the electronic components 1221 in the second row and the first line are thermally decomposed or photolyzed to lose viscosity, and the electronic components 1221 in the second row and the first line are selectively peeled off and bonded to the second upper surface 200A of the second substrate 200. Then, as shown in FIG. 2F , the first substrate 100 is displaced by a distance (X2-X1) along the first axis direction (X axis direction) relative to the second substrate 200, and the first light with the first wavelength is irradiated on the first substrate 100 where the electronic components 1222 of the second row and second column of the first electronic component array are located, so that they are pyrolyzed or photolyzed to lose their viscosity, and the electronic components 1222 of the second row and second column are selectively peeled off and bonded to the second upper surface 200A of the second substrate 200. Similarly, as shown in FIG. 2G , the other electronic components 1223-122M of the 3rd to Mth rows can also be selectively peeled off and bonded to the second upper surface 200A of the second substrate 200 using the same method as described above.

如圖2H所示,當位在該第一基板100的該等電子元件1211~12NM利用上述方法被選擇性剝離並接合於該第二基板200的該第二上表面200A後,便可在該第二基板200的該第二上表面200A形成該第二電子元件陣列(未標示),且該第二電子元件陣列的行距、列距分別為X2、Y2。其中,當X2>X1時,即第二電子元件陣列的行距X2大於第一電子元件陣列的行距X1;當X2<X1時,即第二電子元件陣列的行距X2小於第一電子元件陣列的行距X1。此外,當Y2>Y1時,即第二電子元件陣列的列距Y2大於第一電子元件陣列的列距Y1;當Y2<Y1時,即第二電子元件陣列的列距Y2小於第一電子元件陣列的列距Y1。 As shown in FIG2H, after the electronic components 1211-12NM located on the first substrate 100 are selectively peeled off and bonded to the second upper surface 200A of the second substrate 200 using the above method, the second electronic component array (not shown) can be formed on the second upper surface 200A of the second substrate 200, and the row spacing and column spacing of the second electronic component array are X2 and Y2, respectively. When X2>X1, the row spacing X2 of the second electronic component array is greater than the row spacing X1 of the first electronic component array; when X2<X1, the row spacing X2 of the second electronic component array is less than the row spacing X1 of the first electronic component array. In addition, when Y2>Y1, the row spacing Y2 of the second electronic component array is greater than the row spacing Y1 of the first electronic component array; when Y2<Y1, the row spacing Y2 of the second electronic component array is less than the row spacing Y1 of the first electronic component array.

實施例二 Implementation Example 2

以下將參照圖2A’~2E’俯視圖詳細說明本實施例二所揭示的另一種可調整間距的巨量轉移電子元件的方法。 Another method for mass transfer of electronic components with adjustable spacing disclosed in this embodiment 2 will be described in detail below with reference to the top view of Figures 2A'~2E'.

首先,請參閱圖2A’。如圖2A’所示,提供一第一基板100,該第一基板具有相對的第一上表面100A與第一下表面100B,其中該第一基板100的該第一上表面100A具有複數個電子元件1211~12NM,且該等電子元件1211~12NM分別沿第一軸方向與第二軸方向排列,形成一個由M行電子元件乘以N列電子元件排列所形成的第一電子元件陣列(未標示),其中,該第一基板100為一熱解膠膜或一光解膠膜,該第一軸方向與該第二軸方向實質互相垂直,M、N為大於1的自然數,且該第一電子元件陣列之行距、列距分別為X1、Y1,且X1、Y1>0。本實施例一是以第一軸方向為X軸方向,第二軸方向為Y軸方向作為例示說明,惟在 根據本發明的其它實施例中,也可視需要選擇第一軸方向為Y軸方向,第二軸方向為X軸方向。 First, please refer to FIG. 2A'. As shown in FIG. 2A', a first substrate 100 is provided, the first substrate having a first upper surface 100A and a first lower surface 100B opposite to each other, wherein the first upper surface 100A of the first substrate 100 has a plurality of electronic components 1211-12NM, and the electronic components 1211-12NM are arranged along a first axis direction and a second axis direction, respectively, to form a first electronic component array (not shown) formed by arranging M rows of electronic components by N columns of electronic components, wherein the first substrate 100 is a pyrolytic adhesive film or a photolytic adhesive film, the first axis direction and the second axis direction are substantially perpendicular to each other, M and N are natural numbers greater than 1, and the row spacing and column spacing of the first electronic component array are X1 and Y1, respectively, and X1 and Y1>0. In the first embodiment, the first axis direction is the X axis direction and the second axis direction is the Y axis direction as an example for explanation, but in other embodiments according to the present invention, the first axis direction can also be selected as the Y axis direction and the second axis direction as the X axis direction as needed.

本實施例二的該等電子元件1211~12NM為例如但不限於選自一個以上由發光二極體、雷射二極體及半導體元件所構成之群組。其中,該等發光二極體為例如但不限於所發出的光為紅光、綠光、藍光、黃光、白光、紅外光或紫外光;該等雷射二極體的波長為例如但不限於介於390奈米至1700奈米;該等半導體元件為為例如但不限於選自一個以上由處理器、記憶體IC、微元件IC、邏輯IC及類比IC所構成的群組。 The electronic components 1211~12NM of the second embodiment are, for example, but not limited to, selected from one or more groups consisting of light-emitting diodes, laser diodes, and semiconductor components. The light-emitting diodes are, for example, but not limited to, emitting red light, green light, blue light, yellow light, white light, infrared light, or ultraviolet light; the wavelength of the laser diodes is, for example, but not limited to, between 390 nanometers and 1700 nanometers; the semiconductor components are, for example, but not limited to, selected from one or more groups consisting of processors, memory ICs, micro-component ICs, logic ICs, and analog ICs.

其次,請參照圖2B’。提供一第二基板200,並將該第二基板200設置於該第一基板100下方,該第二基板200具有相對的第二上表面200A與第二下表面200B,且該第一基板100的該第一上表面100A面向該第二基板200的該第二上表面200A。 Next, please refer to FIG. 2B'. A second substrate 200 is provided and disposed below the first substrate 100. The second substrate 200 has a second upper surface 200A and a second lower surface 200B opposite to each other, and the first upper surface 100A of the first substrate 100 faces the second upper surface 200A of the second substrate 200.

其次,請參照圖2B’~2E’。提供一具第一波長的第一光於該第一基板100上方,並使該具第一波長的第一光照射該第一電子元件陣列的第J行、第K列的該電子元件12KJ所在的該第一基板100,該具第一波長的第一光為例如但不限於一波長介於100奈米至12000奈米的光,使其被熱解或光解而失去黏性,並使第J行、第K列的該電子元件12KJ選擇性地被剝離並接合於該第二基板200的該第二上表面200A。然後,如圖2C’所示,先使該第一基板100相對於該第二基板200沿該第二軸方向(Y軸方向)位移(Y2-Y1)的距離,Y2>0且Y1≠Y2,然後使該具第一波長的第一光照射該第一電子元件陣列的第J行、第(K+1)列的該電子元件12(K+1)J所在的該第一基板100使其被熱解或光解而失去黏性,並使第J行、第(K+1)列的該電子元件12(K+1)J選擇性地被剝離並接合於該第二基板200的該第二上表面,其中J、K、Y2均為自然數,且 1

Figure 112119959-A0305-02-0022-45
J
Figure 112119959-A0305-02-0022-151
(M-1),1
Figure 112119959-A0305-02-0022-47
K
Figure 112119959-A0305-02-0022-48
(N-1)。本實施例二是以第J行的電子元件121J~12NJ全部被選擇性地剝離並接合於該第二基板200的該第二上表面200A作為例示說明,惟根據本發明的其它實施例中,也可視需要使第J行的電子元件121J~12NJ部分被選擇性地剝離並接合於該第二基板200的該第二上表面200A上。 Next, please refer to Figures 2B' to 2E'. Provide a first light with a first wavelength above the first substrate 100, and irradiate the first substrate 100 where the electronic component 12KJ of the Jth row and the Kth column of the first electronic component array is located. The first light with the first wavelength is, for example but not limited to, light with a wavelength between 100 nanometers and 12000 nanometers, so that the electronic component 12KJ of the Jth row and the Kth column is pyrolyzed or photolyzed to lose its viscosity, and the electronic component 12KJ of the Jth row and the Kth column is selectively peeled off and bonded to the second upper surface 200A of the second substrate 200. Then, as shown in FIG. 2C′, the first substrate 100 is first displaced by a distance (Y2-Y1) relative to the second substrate 200 along the second axis direction (Y axis direction), Y2>0 and Y1≠Y2, and then the first light with the first wavelength is irradiated on the first substrate 100 where the electronic component 12(K+1)J of the Jth row and the (K+1)th column of the first electronic component array is located, so that it is thermally decomposed or photolyzed to lose its viscosity, and the electronic component 12(K+1)J of the Jth row and the (K+1)th column is selectively peeled off and bonded to the second upper surface of the second substrate 200, wherein J, K, and Y2 are all natural numbers, and 1
Figure 112119959-A0305-02-0022-45
J
Figure 112119959-A0305-02-0022-151
(M-1), 1
Figure 112119959-A0305-02-0022-47
K
Figure 112119959-A0305-02-0022-48
(N-1). In the second embodiment, all the electronic components 121J-12NJ in the Jth row are selectively peeled off and bonded to the second upper surface 200A of the second substrate 200 as an example for explanation. However, in other embodiments of the present invention, part of the electronic components 121J-12NJ in the Jth row may be selectively peeled off and bonded to the second upper surface 200A of the second substrate 200 as needed.

如圖2B’所示,當J=1、K=1時,提供一具第一波長的第一光於該第一基板100上方,並使該具第一波長的第一光照射該第一電子元件陣列的第1列、第1行的電子元件1211所在的該第一基板100,該具第一波長的第一光為例如但不限於一波長介於100奈米至12000奈米的光,,使其被熱解或光解而失去黏性,並使第1列、第1行的電子元件1211選擇性地被剝離並接合於該第二基板200的該第二上表面200A。然後,如圖2C’所示,先使該第一基板100相對於該第二基板200沿該第二軸方向(Y軸方向)位移(Y2-Y1)的距離,然後使該具第一波長的第一光照射該第一電子元件陣列的第2列、第1行的電子元件1221所在的該第一基板100使其被熱解或光解而失去黏性,並使第2列、第1行的電子元件1221選擇性地被剝離並接合於該第二基板200的該第二上表面。同理,第1行的其它電子元件1231~12N1也可利用前述的相同方法,選擇性地被剝離並接合於該第二基板200的該第二上表面200A。 As shown in FIG. 2B ′, when J=1 and K=1, a first light with a first wavelength is provided above the first substrate 100, and the first light with the first wavelength is irradiated on the first substrate 100 where the electronic components 1211 in the first column and the first row of the first electronic component array are located. The first light with the first wavelength is, for example but not limited to, light with a wavelength between 100 nanometers and 12000 nanometers, so that the electronic components 1211 in the first column and the first row are thermally decomposed or photolyzed to lose their viscosity, and the electronic components 1211 in the first column and the first row are selectively peeled off and bonded to the second upper surface 200A of the second substrate 200. Then, as shown in FIG. 2C', the first substrate 100 is first displaced by a distance (Y2-Y1) along the second axis direction (Y axis direction) relative to the second substrate 200, and then the first light with the first wavelength is irradiated on the first substrate 100 where the electronic components 1221 of the second column and the first row of the first electronic component array are located, so that they are pyrolyzed or photolyzed to lose their viscosity, and the electronic components 1221 of the second column and the first row are selectively peeled off and bonded to the second upper surface of the second substrate 200. Similarly, the other electronic components 1231~12N1 of the first row can also be selectively peeled off and bonded to the second upper surface 200A of the second substrate 200 using the same method as described above.

然後,請參照圖2D’~2E’。當該第一電子元件陣列的第J行的該等電子元件121J~12NJ被選擇性地剝離並接合於該第二基板200的該第二上表面200A後,先使該第一基板100重新對準該第二基板200,再使該第一基板100相對於該第二基板200沿該第一軸方向(X軸方向)位移(X2-X1)的距離,X2>0且X1≠X2,然後使該具第一波長的第一光照射該第一電子元件陣列的第(J+1)行、第K列的該電子元件12K(J+1)所在的該第一基板100使其被熱解或光解而失去黏性,並使第(J+1)行、第K列的該電子元件12K(J+1)選擇性地被剝離並接合於 該第二基板200的該第二上表面200A。然後,再使該第一基板相對於該第二基板沿該第二軸方向位移(Y2-Y1)的距離,並使該具第一波長的第一光照射該第一電子元件陣列的第(J+1)行、第(K+1)列的該電子元件12(K+1)(J+1)所在的該第一基板100使其被熱解或光解而失去黏性,並使第(J+1)行、第(K+1)列的該電子元件12(K+1)(J+1)選擇性地被剝離並接合於該第二基板200的該第二上表面200A,其中X2為自然數;其中,當位在該第一基板的該等電子元件全部或部分被選擇性剝離並接合於該第二基板200的該第二上表面200A後,便可在該第二基板200的該第二上表面200A形成該第二電子元件陣列(未標示)。 Then, please refer to Figures 2D'~2E'. After the electronic components 121J~12NJ of the Jth row of the first electronic component array are selectively peeled off and bonded to the second upper surface 200A of the second substrate 200, the first substrate 100 is first realigned with the second substrate 200, and then the first substrate 100 is displaced relative to the second substrate 200 along the first axis direction (X axis direction) by a distance (X2-X1), X2>0 and X 1≠X2, and then the first light with the first wavelength is irradiated on the first substrate 100 where the electronic component 12K(J+1) in the (J+1)th row and the Kth column of the first electronic component array is located, so that the electronic component 12K(J+1) in the (J+1)th row and the Kth column is pyrolyzed or photolyzed to lose its viscosity, and the electronic component 12K(J+1) in the (J+1)th row and the Kth column is selectively peeled off and bonded to the second upper surface 200A of the second substrate 200. Then, the first substrate is displaced relative to the second substrate along the second axis by a distance of (Y2-Y1), and the first light having the first wavelength is irradiated on the first substrate 100 where the electronic component 12(K+1)(J+1) in the (J+1)th row and (K+1)th column of the first electronic component array is located, so that the electronic component 12(K+1)(J+1) in the (J+1)th row and (K+1)th column is thermally decomposed or photodecomposed to lose its viscosity, and the electronic component 12(K+1)(J+1) in the (J+1)th row and (K+1)th column is thermally decomposed or photodecomposed to lose its viscosity. 2(K+1)(J+1) are selectively peeled off and bonded to the second upper surface 200A of the second substrate 200, where X2 is a natural number; wherein, when all or part of the electronic components located on the first substrate are selectively peeled off and bonded to the second upper surface 200A of the second substrate 200, the second electronic component array (not shown) can be formed on the second upper surface 200A of the second substrate 200.

如圖2D’所示,當J=1、K=1時,且該第一電子元件陣列的第1行的該等電子元件1211~12N1被選擇性地剝離並接合於該第二基板200的該第二上表面200A後,先使該第一基板100重新對準該第二基板200,再使該第一基板100相對於該第二基板200沿該第一軸方向(X軸方向)位移(X2-X1)的距離,然後使該具第一波長的第一光照射該第一電子元件陣列的第2行、第1列的該電子元件1212所在的該第一基板100使其被熱解或光解而失去黏性,並使第2行、第1列的該電子元件1212選擇性地被剝離並接合於該第二基板200的該第二上表面200A。然後,如圖2E’所示,先使該第一基板100相對於該第二基板200沿該第二軸方向(Y軸方向)位移(Y2-Y1)的距離,再使該具第一波長的第一光照射該第一電子元件陣列的第2行、第2列的該電子元件1222所在的該第一基板100使其被熱解或光解而失去黏性,並使第2行、第2列的該電子元件1222選擇性地被剝離並接合於該第二基板200的該第二上表面200A。同理,第2行的其它電子元件1232~12N2也可利用前述的相同方法,選擇性地被剝離並接合於該第二基板200的該第二上表面200A。 As shown in FIG. 2D′, when J=1 and K=1, and after the electronic components 1211~12N1 of the first row of the first electronic component array are selectively peeled off and bonded to the second upper surface 200A of the second substrate 200, the first substrate 100 is first realigned with the second substrate 200, and then the first substrate 100 is displaced by a distance (X2-X1) along the first axis direction (X axis direction) relative to the second substrate 200, and then the first light with a first wavelength is irradiated on the first substrate 100 where the electronic components 1212 of the second row and the first column of the first electronic component array are located, so that the electronic components 1212 of the second row and the first column are thermally decomposed or photolyzed to lose viscosity, and the electronic components 1212 of the second row and the first column are selectively peeled off and bonded to the second upper surface 200A of the second substrate 200. Then, as shown in FIG. 2E', the first substrate 100 is first displaced by a distance (Y2-Y1) along the second axis direction (Y axis direction) relative to the second substrate 200, and then the first light with the first wavelength is irradiated on the first substrate 100 where the electronic components 1222 of the second row and second column of the first electronic component array are located, so that they are pyrolyzed or photolyzed to lose their viscosity, and the electronic components 1222 of the second row and second column are selectively peeled off and bonded to the second upper surface 200A of the second substrate 200. Similarly, the other electronic components 1232~12N2 of the second row can also be selectively peeled off and bonded to the second upper surface 200A of the second substrate 200 using the same method as described above.

如圖2E’所示,當位在該第一基板100的該等電子元件1211~12NM利用上述方法被選擇性剝離並接合於該第二基板200的該第二上表面200A後,便可在該第二基板200的該第二上表面200A形成該第二電子元件陣列(未標示),且該第二電子元件陣列的行距、列距分別為X2、Y2。其中,當X2>X1時,即第二電子元件陣列的行距X2大於第一電子元件陣列的行距X1;當X2<X1時,即第二電子元件陣列的行距X2小於第一電子元件陣列的行距X1。其中,當Y2>Y1時,即第二電子元件陣列的列距Y2大於第一電子元件陣列的列距Y1;當Y2<Y1時,即第二電子元件陣列的列距Y2小於第一電子元件陣列的列距Y1。 As shown in FIG. 2E ', after the electronic components 1211-12NM located on the first substrate 100 are selectively peeled off and bonded to the second upper surface 200A of the second substrate 200 using the above method, the second electronic component array (not shown) can be formed on the second upper surface 200A of the second substrate 200, and the row spacing and column spacing of the second electronic component array are X2 and Y2, respectively. When X2>X1, the row spacing X2 of the second electronic component array is greater than the row spacing X1 of the first electronic component array; when X2<X1, the row spacing X2 of the second electronic component array is less than the row spacing X1 of the first electronic component array. Among them, when Y2>Y1, the column spacing Y2 of the second electronic component array is greater than the column spacing Y1 of the first electronic component array; when Y2<Y1, the column spacing Y2 of the second electronic component array is less than the column spacing Y1 of the first electronic component array.

實施例三 Implementation Example 3

以下將參照圖3A~3I俯視圖詳細說明本實施例三所揭示的一種可調整間距的巨量轉移電子元件的方法。 The following will describe in detail a method for mass transfer of electronic components with adjustable spacing disclosed in this embodiment 3 with reference to the top views of Figures 3A to 3I.

首先,,請參閱圖3A。如圖3A所示,提供一第一基板100,該第一基板100具有相對的第一上表面100A與第一下表面100B,其中該第一基板100的該第一上表面100A具有複數個電子元件1211~12NM,且該等電子元件1211~12NM分別沿第一軸方向與第二軸方向排列,形成一個由M行電子元件乘以N列電子元件排列所形成的第一電子元件陣列(未標示),其中,該第一基板100為一熱解膠膜或一光解膠膜,該第一軸方向與該第二軸方向實質互相垂直,M、N為大於1的自然數,且該第一電子元件陣列之行距、列距分別為X1、Y1,且X1、Y1>0。本實施例一是以第一軸方向為X軸方向,第二軸方向為Y軸方向作為例示說明,惟在根據本發明的其它實施例中,也可視需要選擇第一軸方向為Y軸方向,第二軸方向為X軸方向。 First, please refer to FIG3A. As shown in FIG3A, a first substrate 100 is provided, and the first substrate 100 has a first upper surface 100A and a first lower surface 100B opposite to each other, wherein the first upper surface 100A of the first substrate 100 has a plurality of electronic components 1211-12NM, and the electronic components 1211-12NM are arranged along the first axis direction and the second axis direction, respectively, to form a first electronic component array (not shown) formed by arranging M rows of electronic components by N columns of electronic components, wherein the first substrate 100 is a pyrolytic adhesive film or a photolytic adhesive film, the first axis direction and the second axis direction are substantially perpendicular to each other, M and N are natural numbers greater than 1, and the row spacing and column spacing of the first electronic component array are X1 and Y1, respectively, and X1 and Y1>0. In the first embodiment, the first axis direction is the X axis direction and the second axis direction is the Y axis direction as an example for explanation. However, in other embodiments according to the present invention, the first axis direction can be selected as the Y axis direction and the second axis direction can be selected as the X axis direction as needed.

本實施例三的該等電子元件1211~12NM為例如但不限於選自一個以上由發光二極體、雷射二極體及半導體元件所構成之群組。其中,該等發光 二極體為例如但不限於所發出的光為紅光、綠光、藍光、黃光、白光、紅外光或紫外光;該等雷射二極體的波長為例如但不限於介於390奈米至1700奈米;該等半導體元件為為例如但不限於選自一個以上由處理器、記憶體IC、微元件IC、邏輯IC及類比IC所構成的群組。 The electronic components 1211~12NM of the third embodiment are, for example, but not limited to, selected from one or more groups consisting of light-emitting diodes, laser diodes, and semiconductor components. The light-emitting diodes are, for example, but not limited to, emitting red light, green light, blue light, yellow light, white light, infrared light, or ultraviolet light; the wavelength of the laser diodes is, for example, but not limited to, between 390 nanometers and 1700 nanometers; the semiconductor components are, for example, but not limited to, selected from one or more groups consisting of processors, memory ICs, micro-component ICs, logic ICs, and analog ICs.

其次,請參照圖3B。提供一第二基板200,並將該第二基板200設置於該第一基板100下方,該第二基板200具有相對的第二上表面200A與第二下表面200B,且該第一基板100的該第一上表面100A面向該第二基板200的該第二上表面200A。其中,該第二基板200為一熱解膠膜或一光解膠膜。 Next, please refer to FIG. 3B. Provide a second substrate 200, and place the second substrate 200 below the first substrate 100. The second substrate 200 has a second upper surface 200A and a second lower surface 200B opposite to each other, and the first upper surface 100A of the first substrate 100 faces the second upper surface 200A of the second substrate 200. The second substrate 200 is a pyrolytic film or a photolytic film.

其次,請參照圖3B~3D。提供一具第一波長的第一光於該第一基板100上方,該具第一波長的第一光為例如但不限於一波長介於100奈米至12000奈米的光,並使該具第一波長的第一光照射該第一電子元件陣列的第K列的該等電子元件12K1~12KM所在的該第一基板100,使其熱解或光解而失去黏性,並使第K列的該等電子元件全部被剝離並接合於該第二基板200的該第二上表面200A。本實施例三是以第K列的電子元件12K1~12KM全部被選擇性地剝離並接合於該第二基板200的該第二上表面200A作為例示說明,惟根據本發明的其它實施例中,也可視需要使第K列的電子元件12K1~12KM部分被選擇性地剝離並接合於該第二基板200的該第二上表面200A上。然後,使該第一基板100相對於該第二基板200沿該第二軸方向(Y軸方向)位移(Y2-Y1)的距離,Y2>0且Y1≠Y2,然後使該具第一波長的第一光照射該第一電子元件陣列的第(K+1)列的該等電子元件12(K+1)1~12(K+1)M所在的該第一基板100,該具第一波長的第一光為例如但不限於一波長介於100奈米至12000奈米的光,使其被熱解或光解而失去黏性,並使第(K+1)列的該等電子元件12(K+1)1~12(K+1)M全部或部分被剝離並接合於 該第二基板200的該第二上表面200A,K為自然數,且1

Figure 112119959-A0305-02-0026-49
K
Figure 112119959-A0305-02-0026-152
(N-1),Y2>0,且Y1≠Y2。本實施例三是以第(K+1)列的電子元件12(K+1)1~12(K+1)M全部被選擇性地剝離並接合於該第二基板200的該第二上表面200A作為例示說明,惟根據本發明的其它實施例中,也可視需要使第(K+1)列的電子元件12(K+1)1~12(K+1)M部分被選擇性地剝離並接合於該第二基板200的該第二上表面200A上。 Next, please refer to Figures 3B to 3D. A first light with a first wavelength is provided above the first substrate 100. The first light with the first wavelength is, for example but not limited to, a light with a wavelength between 100 nanometers and 12,000 nanometers. The first light with the first wavelength irradiates the first substrate 100 where the electronic components 12K1 to 12KM in the Kth row of the first electronic component array are located, causing them to be thermally decomposed or photolyzed to lose viscosity, and all the electronic components in the Kth row are peeled off and bonded to the second upper surface 200A of the second substrate 200. The third embodiment is illustrated in that all of the electronic components 12K1~12KM in the Kth column are selectively peeled off and bonded to the second upper surface 200A of the second substrate 200. However, in other embodiments of the present invention, part of the electronic components 12K1~12KM in the Kth column may be selectively peeled off and bonded to the second upper surface 200A of the second substrate 200 as needed. Then, the first substrate 100 is displaced relative to the second substrate 200 along the second axis direction (Y axis direction) by a distance of (Y2-Y1), Y2>0 and Y1≠Y2, and then the first light with a first wavelength is irradiated on the first substrate 100 where the electronic components 12(K+1)1~12(K+1)M in the (K+1)th row of the first electronic component array are located. The first light with a first wavelength is, for example but not limited to, light with a wavelength between 100 nanometers and 12000 nanometers, so that the electronic components 12(K+1)1~12(K+1)M in the (K+1)th row are thermally decomposed or photolyzed to lose viscosity, and the electronic components 12(K+1)1~12(K+1)M in the (K+1)th row are completely or partially peeled off and bonded to the second upper surface 200A of the second substrate 200, where K is a natural number and 1
Figure 112119959-A0305-02-0026-49
K
Figure 112119959-A0305-02-0026-152
(N-1), Y2>0, and Y1≠Y2. The third embodiment is described by taking the electronic components 12(K+1)1~12(K+1)M in the (K+1)th row as an example to be selectively peeled off and bonded to the second upper surface 200A of the second substrate 200. However, in other embodiments of the present invention, the electronic components 12(K+1)1~12(K+1)M in the (K+1)th row may be partially peeled off and bonded to the second upper surface 200A of the second substrate 200 as needed.

如圖3B所示,當K=1時,提供一具第一波長的第一光於該第一基板100上方,該具第一波長的第一光為例如但不限於一波長介於100奈米至12000奈米的光,並使該具第一波長的第一光照射該第一電子元件陣列的第1列的該等電子元件1211~121M所在的該第一基板100,使其熱解或光解而失去黏性,並使第1列的該等電子元件1211~121M全部被剝離並接合於該第二基板200的該第二上表面200A。本實施例三是以第1列的電子元件1211~121M全部被選擇性地剝離並接合於該第二基板200的該第二上表面200A作為例示說明,惟根據本發明的其它實施例中,也可視需要使第1列的電子元件1211~121M部分被選擇性地剝離並接合於該第二基板200的該第二上表面200A上。接著,如圖3C所示,使該第一基板100相對於該第二基板200沿該第二軸方向(Y軸方向)位移(Y2-Y1)的距離,然後使該具第一波長的第一光照射該第一電子元件陣列的第2列的該等電子元件1221~122M所在的該第一基板100,該具第一波長的第一光為例如但不限於一波長介於100奈米至12000奈米的光,使其被熱解或光解而失去黏性,並使第2列的該等電子元件1221~122M全部被剝離並接合於該第二基板200的該第二上表面200A,Y2>0,且Y1≠Y2。本實施例三是以第2列的電子元件12(21~122M全部被選擇性地剝離並接合於該第二基板200的該第二上表面200A作為例示說明,惟根據本發明的其它實施例中,也可視需要使第2列的電子元件1221~122M部分被選 擇性地剝離並接合於該第二基板200的該第二上表面200A上。同理,如圖3D所示,第3~N列的其它電子元件1231~12NM也可利用前述的相同方法,選擇性地被全部或部分剝離並接合於該第二基板200的該第二上表面200A。 As shown in FIG3B , when K=1, a first light with a first wavelength is provided above the first substrate 100. The first light with the first wavelength is, for example but not limited to, light with a wavelength between 100 nanometers and 12,000 nanometers. The first light with the first wavelength irradiates the first substrate 100 where the electronic components 1211-121M in the first row of the first electronic component array are located, causing them to be thermally decomposed or photolyzed to lose viscosity, and all of the electronic components 1211-121M in the first row are peeled off and bonded to the second upper surface 200A of the second substrate 200. The third embodiment uses the example that all the electronic components 1211~121M in the first column are selectively peeled off and bonded to the second upper surface 200A of the second substrate 200. However, in other embodiments of the present invention, part of the electronic components 1211~121M in the first column can be selectively peeled off and bonded to the second upper surface 200A of the second substrate 200 as needed. Next, as shown in FIG3C , the first substrate 100 is displaced a distance (Y2-Y1) along the second axis direction (Y axis direction) relative to the second substrate 200, and then the first light with a first wavelength is irradiated on the first substrate 100 where the electronic components 1221~122M of the second row of the first electronic component array are located. The first light with a first wavelength is, for example but not limited to, light with a wavelength between 100 nanometers and 12000 nanometers, so that the electronic components 1221~122M in the second row are thermally decomposed or photolyzed to lose their viscosity, and all the electronic components 1221~122M in the second row are peeled off and bonded to the second upper surface 200A of the second substrate 200, Y2>0, and Y1≠Y2. In the third embodiment, all the electronic components 1221~122M in the second row are selectively peeled off and bonded to the second upper surface 200A of the second substrate 200 as an example. However, in other embodiments of the present invention, the electronic components 1221~122M in the second row can also be selectively peeled off and bonded to the second upper surface 200A of the second substrate 200 as needed. Similarly, as shown in FIG. 3D, the other electronic components 1231~12NM in the 3rd to Nth rows can also be selectively peeled off and bonded to the second upper surface 200A of the second substrate 200 in whole or in part using the same method as described above.

如圖3E所示,當位在該第一基板100的該等電子元件1211~12NM利用上述方法全部被選擇性剝離並接合於該第二基板200的該第二上表面200A後,便可在該第二基板200的該第二上表面200A形成該第二電子元件陣列(未標示),且該第二電子元件陣列之間的行距、列距分別為X1、Y2。其中,當Y2>Y1時,即第二電子元件陣列的列距大於第一電子元件陣列的列距;當Y2<Y1時,即第二電子元件陣列的列距小於第一電子元件陣列的列距。 As shown in FIG. 3E , when the electronic components 1211-12NM located on the first substrate 100 are all selectively peeled off and bonded to the second upper surface 200A of the second substrate 200 using the above method, the second electronic component array (not shown) can be formed on the second upper surface 200A of the second substrate 200, and the row spacing and column spacing between the second electronic component array are X1 and Y2 respectively. When Y2>Y1, the column spacing of the second electronic component array is greater than the column spacing of the first electronic component array; when Y2<Y1, the column spacing of the second electronic component array is less than the column spacing of the first electronic component array.

如圖3F~3I所示,本實施例三更可將位在該第二基板200的該等電子元件1211~12NM進一部地全部或部分轉移至該第三基板300,並在該第三基板300形成一個第三電子元件陣列(未標示),且該第三電子元件陣列之行距與列距分別為X2、Y2,且X1≠X2、Y1≠Y2。 As shown in FIGS. 3F-3I , the third embodiment can further partially or wholly or partially transfer the electronic components 1211-12NM located on the second substrate 200 to the third substrate 300 and form a third electronic component array (not shown) on the third substrate 300, and the row and column spacing of the third electronic component array are X2 and Y2 respectively, and X1≠X2, Y1≠Y2.

如圖3F~3I所示,提供一第三基板300,並將該第三基板300設置於該第二基板200下方,該第三基板300具有相對的第三上表面300A與第三下表面300B,且該第二基板200的該第二上表面200A面向該第三基板300的該第三上表面300A。然後,提供一具第二波長的第二光於該第二基板200上方,並使該具第二波長的第二光照射該第二電子元件陣列的第J行的該等電子元件所在的該第二基板200,該具第二波長的第二光為例如但不限於一波長介於100奈米至12000奈米的光,使該第二基板200被熱解或光解失去黏性,並使第J行的該等電子元件121J~12NJ全部被剝離並接合於該第三基板300的該第三上表面300A。接著,使該第二基板200相對於該第三基板300沿該第一軸方向位移(X2-X1)的距離,其中 X2>0,且X1≠X2,然後使該具第二波長的第二光照射該第二電子元件陣列的第(J+1)行的該等電子元件121(J+1)~12N(J+1)所在的該第二基板200,使該第二基板200被熱解或光解而失去黏性,並使第(J+1)行的該等電子元件121(J+1)~12N(J+1)全部或部分被剝離並接合於該第三基板300的該第三上表面300A,J為自然數,且1

Figure 112119959-A0305-02-0028-51
J
Figure 112119959-A0305-02-0028-153
(M-1)。當位在該第二基板200的該等電子元件1211~12NM全部被選擇性剝離並接合於該第三基板300的該第三上表面300A後,便可在該第三基板300形成一第三電子元件陣列(未標示),且該第三電子元件陣列(未標示)之行距與列距分別為X2、Y2。本實施例三是以第J行的該等電子元件121J~12NJ、第(J+1)行的該等電子元件121(J+1)~12N(J+1)全部被選擇性地剝離並接合於該第三基板300的該第三上表面300A作為例示說明,惟根據本發明的其它實施例中,也可視需要使第J行的該等電子元件121J~12NJ、第(J+1)行的該等電子元件121(J+1)~12N(J+1)部分被選擇性地剝離並接合於該第三基板300的該第三上表面300A上。 As shown in FIGS. 3F to 3I , a third substrate 300 is provided and disposed below the second substrate 200 . The third substrate 300 has a third upper surface 300A and a third lower surface 300B opposite to each other, and the second upper surface 200A of the second substrate 200 faces the third upper surface 300A of the third substrate 300 . Then, a second light with a second wavelength is provided above the second substrate 200, and the second light with the second wavelength is used to irradiate the second substrate 200 where the electronic components of the Jth row of the second electronic component array are located. The second light with the second wavelength is, for example but not limited to, light with a wavelength between 100 nanometers and 12,000 nanometers, so that the second substrate 200 is thermally decomposed or photolyzed to lose its viscosity, and all the electronic components 121J~12NJ of the Jth row are peeled off and bonded to the third upper surface 300A of the third substrate 300. Next, the second substrate 200 is displaced relative to the third substrate 300 along the first axis by a distance of (X2-X1), wherein X2>0, and X1≠X2, and then the second light having a second wavelength is irradiated on the second substrate 200 where the electronic components 121(J+1)~12N(J+1) of the (J+1)th row of the second electronic component array are located, so that the second substrate 200 is thermally decomposed or photolyzed to lose its viscosity, and the electronic components 121(J+1)~12N(J+1) of the (J+1)th row are completely or partially peeled off and bonded to the third upper surface 300A of the third substrate 300, where J is a natural number, and 1
Figure 112119959-A0305-02-0028-51
J
Figure 112119959-A0305-02-0028-153
(M-1). When all the electronic components 1211-12NM on the second substrate 200 are selectively peeled off and bonded to the third upper surface 300A of the third substrate 300, a third electronic component array (not shown) can be formed on the third substrate 300, and the row spacing and column spacing of the third electronic component array (not shown) are X2 and Y2 respectively. In the third embodiment, the electronic components 121J~12NJ in the Jth row and the electronic components 121(J+1)~12N(J+1) in the (J+1)th row are all selectively peeled off and bonded to the third upper surface 300A of the third substrate 300 as an example for explanation. However, in other embodiments of the present invention, the electronic components 121J~12NJ in the Jth row and the electronic components 121(J+1)~12N(J+1) in the (J+1)th row may also be partially selectively peeled off and bonded to the third upper surface 300A of the third substrate 300 as needed.

如圖3F所示,當J=1時,提供一具第二波長的第二光於該第二基板上方,並使該具第二波長的第二光照射該第二電子元件陣列的第1行的該等電子元件所在的該第二基板200,該具第二波長的第二光為例如但不限於一波長介於100奈米至12000奈米的光,使該第二基板200被熱解或光解失去黏性,並使第1行的該等電子元件1211~12N1全部或部分被剝離並接合於該第三基板300的該第三上表面300A。 As shown in FIG. 3F , when J=1, a second light with a second wavelength is provided above the second substrate, and the second light with a second wavelength is irradiated on the second substrate 200 where the electronic components of the first row of the second electronic component array are located. The second light with a second wavelength is, for example but not limited to, light with a wavelength between 100 nanometers and 12000 nanometers, so that the second substrate 200 is pyrolyzed or photolyzed to lose its viscosity, and the electronic components 1211~12N1 of the first row are completely or partially peeled off and bonded to the third upper surface 300A of the third substrate 300.

接著,如圖3G所示,使該第二基板200相對於該第三基板300沿該第一軸方向位移(X2-X1)的距離,然後使該具第二波長的第二光照射該第二電子元件陣列的第2行的該等電子元件1212~12N2所在的該第二基板200,使該第二基板200被熱解或光解而失去黏性,並使第2行的該等電子元件1212~12N2全部或部分被剝離並接合於該第三基板300的該第三上表面300A。 Next, as shown in FIG. 3G , the second substrate 200 is displaced relative to the third substrate 300 by a distance (X2-X1) along the first axis direction, and then the second light with the second wavelength is irradiated on the second substrate 200 where the electronic components 1212-12N2 of the second row of the second electronic component array are located, so that the second substrate 200 is thermally decomposed or photolyzed to lose its viscosity, and the electronic components 1212-12N2 of the second row are completely or partially peeled off and bonded to the third upper surface 300A of the third substrate 300.

然後,如圖3H所示,使該第二基板200相對於該第三基板300沿該第一軸方向再度位移(X2-X1)的距離,然後使該具第二波長的第二光照射該第二電子元件陣列的第3行的該等電子元件1213~12N3所在的該第二基板200,使該第二基板200被熱解或光解而失去黏性,並使第3行的該等電子元件1213~12N3全部或部分被剝離並接合於該第三基板300的該第三上表面300A。同理,第4行~第M行的其它電子元件1214~12NM也可利用前述的相同方法,選擇性地被剝離並接合於該第三基板300的該第三上表面300A。 Then, as shown in FIG. 3H , the second substrate 200 is displaced again along the first axis direction by a distance (X2-X1) relative to the third substrate 300, and then the second light with the second wavelength is irradiated on the second substrate 200 where the electronic components 1213-12N3 of the third row of the second electronic component array are located, so that the second substrate 200 is pyrolyzed or photolyzed to lose its viscosity, and the electronic components 1213-12N3 of the third row are completely or partially peeled off and bonded to the third upper surface 300A of the third substrate 300. Similarly, the other electronic components 1214-12NM of the 4th to Mth rows can also be selectively peeled off and bonded to the third upper surface 300A of the third substrate 300 using the same method as described above.

如圖3I所示,當位在該第二基板200的該等電子元件1211~12NM全部被選擇性剝離並接合於該第三基板300的該第三上表面300A後,便可在該第三基板300形成一第三電子元件陣列(未標示),且該第三電子元件陣列之行距與列距分別為X2、Y2。其中,當X2>X1時,即第三電子元件陣列的行距大於第二電子元件陣列的行距;當X2<X1時,即第三電子元件陣列的行距小於第二電子元件陣列的行距。 As shown in FIG. 3I , when all the electronic components 1211-12NM located on the second substrate 200 are selectively peeled off and bonded to the third upper surface 300A of the third substrate 300, a third electronic component array (not shown) can be formed on the third substrate 300, and the row spacing and column spacing of the third electronic component array are X2 and Y2 respectively. When X2>X1, the row spacing of the third electronic component array is greater than the row spacing of the second electronic component array; when X2<X1, the row spacing of the third electronic component array is less than the row spacing of the second electronic component array.

本實施例三是以位在第二基板200的第二電子陣列的該等電子元件1211~12NM全部被選擇性地剝離並接合於該第三基板300的該第三上表面300A作為例示說明,惟根據本發明的其它實施例中,也可視需要使位在第二基板200的第二電子陣列的該等電子元件1211~12NM部分被選擇性地剝離並接合於該第三基板300的該第三上表面300A上。 In the third embodiment, all the electronic components 1211-12NM located in the second electronic array of the second substrate 200 are selectively peeled off and bonded to the third upper surface 300A of the third substrate 300 as an example. However, in other embodiments of the present invention, part of the electronic components 1211-12NM located in the second electronic array of the second substrate 200 can also be selectively peeled off and bonded to the third upper surface 300A of the third substrate 300 as needed.

實施例四 Implementation Example 4

以下將參照圖3A’~3H’俯視圖詳細說明本實施例四所揭示的一種可調整間距的巨量轉移電子元件的方法。 The following will describe in detail a method for transferring electronic components in large quantities with adjustable spacing disclosed in this fourth embodiment with reference to the top view of Figures 3A'~3H'.

首先,,請參閱圖3A’。如圖3A’所示,提供一第一基板100,該第一基板100具有相對的第一上表面100A與第一下表面100B,其中該第一基板100 的該第一上表面100A具有複數個電子元件1211~12NM,且該等電子元件1211~12NM分別沿第一軸方向與第二軸方向排列,形成一個由M行電子元件乘以N列電子元件排列所形成的第一電子元件陣列(未標示),其中,該第一基板100為一熱解膠膜或一光解膠膜,該第一軸方向與該第二軸方向實質互相垂直,M、N為大於1的自然數,且該第一電子元件陣列之行距、列距分別為X1、Y1,且X1、Y1>0。本實施例一是以第一軸方向為X軸方向,第二軸方向為Y軸方向作為例示說明,惟在根據本發明的其它實施例中,也可視需要選擇第一軸方向為Y軸方向,第二軸方向為X軸方向。 First, please refer to FIG. 3A'. As shown in FIG. 3A', a first substrate 100 is provided, and the first substrate 100 has a first upper surface 100A and a first lower surface 100B opposite to each other, wherein the first upper surface 100A of the first substrate 100 has a plurality of electronic components 1211~12NM, and the electronic components 1211~12NM are arranged along the first axis direction and the second axis direction, respectively, to form a first electronic component array (not marked) formed by arranging M rows of electronic components by N columns of electronic components, wherein the first substrate 100 is a pyrolytic adhesive film or a photolytic adhesive film, the first axis direction and the second axis direction are substantially perpendicular to each other, M and N are natural numbers greater than 1, and the row spacing and column spacing of the first electronic component array are X1 and Y1, respectively, and X1 and Y1>0. In the first embodiment, the first axis direction is the X axis direction and the second axis direction is the Y axis direction as an example for explanation. However, in other embodiments according to the present invention, the first axis direction can be selected as the Y axis direction and the second axis direction can be selected as the X axis direction as needed.

本實施例四的該等電子元件1211~12NM為例如但不限於選自一個以上由發光二極體、雷射二極體及半導體元件所構成之群組。其中,該等發光二極體為例如但不限於所發出的光為紅光、綠光、藍光、黃光、白光、紅外光或紫外光;該等雷射二極體的波長為例如但不限於介於390奈米至1700奈米;該等半導體元件為為例如但不限於選自一個以上由處理器、記憶體IC、微元件IC、邏輯IC及類比IC所構成的群組。 The electronic components 1211-12NM of the fourth embodiment are, for example, but not limited to, selected from one or more groups consisting of light-emitting diodes, laser diodes, and semiconductor components. The light-emitting diodes are, for example, but not limited to, emitting red light, green light, blue light, yellow light, white light, infrared light, or ultraviolet light; the wavelength of the laser diodes is, for example, but not limited to, between 390 nanometers and 1700 nanometers; the semiconductor components are, for example, but not limited to, selected from one or more groups consisting of processors, memory ICs, micro-component ICs, logic ICs, and analog ICs.

其次,請參照圖3B’。提供一第二基板200,並將該第二基板200設置於該第一基板100下方,該第二基板200具有相對的第二上表面200A與第二下表面200B,且該第一基板100的該第一上表面100A面向該第二基板200的該第二上表面200A。其中,該第二基板200為一熱解膠膜或一光解膠膜。 Next, please refer to FIG. 3B'. Provide a second substrate 200, and place the second substrate 200 below the first substrate 100. The second substrate 200 has a second upper surface 200A and a second lower surface 200B opposite to each other, and the first upper surface 100A of the first substrate 100 faces the second upper surface 200A of the second substrate 200. The second substrate 200 is a pyrolytic film or a photolytic film.

其次,請參照圖3B’~3D’。提供一具第一波長的第一光於該第一基板100上方,該具第一波長的第一光為例如但不限於一波長介於100奈米至12000奈米的光,並使並使該具第一波長的第一光照射該第一電子元件陣列的第J行的該等電子元件121J~12NJ所在的該第一基板100,使其熱解或光解而失去黏性,並使第J行的該等電子元件121J~12NJ全部被剝離並接合於該第二基板200的該第二上表面200A。本實施例四是以第J行的該等電子元件121J~12NJ全部被選擇性 地剝離並接合於該第二基板200的該第二上表面200A作為例示說明,惟根據本發明的其它實施例中,也可視需要使第J行的該等電子元件121J~12NJ部分被選擇性地剝離並接合於該第二基板200的該第二上表面200A上。接著,使該第一基板100相對於該第二基板200沿該第一軸方向位移(X2-X1)的距離,X2>0且X1≠X2。然後使該具第一波長的第一光照射該第一電子元件陣列的第(J+1)行的該等電子元件121(J+1)~12N(J+1)所在的該第一基板200,使其被熱解或光解而失去黏性,並使第(J+1)行的該等電子元件121(J+1)~12N(J+1)全部被剝離並接合於該第二基板200的該第二上表面200A,J為自然數,且1

Figure 112119959-A0305-02-0031-154
J
Figure 112119959-A0305-02-0031-155
(M-1)。本實施例四是以第(J+1)行的該等電子元件121(J+1)~12N(J+1)全部被選擇性地剝離並接合於該第二基板200的該第二上表面200A作為例示說明,惟根據本發明的其它實施例中,也可視需要使第(J+1)行的該等電子元件121(J+1)~12N(J+1)部分被選擇性地剝離並接合於該第二基板200的該第二上表面200A上。 Next, please refer to FIG. 3B' to FIG. 3D'. A first light with a first wavelength is provided above the first substrate 100. The first light with a first wavelength is, for example but not limited to, a light with a wavelength between 100 nanometers and 12000 nanometers. The first light with a first wavelength is irradiated on the first substrate 100 where the electronic components 121J to 12NJ of the Jth row of the first electronic component array are located, so that the electronic components 121J to 12NJ of the Jth row are thermally decomposed or photolyzed to lose viscosity, and all the electronic components 121J to 12NJ of the Jth row are peeled off and bonded to the second upper surface 200A of the second substrate 200. In the fourth embodiment, all the electronic components 121J-12NJ in the Jth row are selectively peeled off and bonded to the second upper surface 200A of the second substrate 200 as an example, but in other embodiments of the present invention, part of the electronic components 121J-12NJ in the Jth row can also be selectively peeled off and bonded to the second upper surface 200A of the second substrate 200 as needed. Then, the first substrate 100 is displaced relative to the second substrate 200 along the first axis by a distance (X2-X1), X2>0 and X1≠X2. Then, the first light with the first wavelength is used to irradiate the first substrate 200 where the electronic components 121(J+1)-12N(J+1) in the (J+1)th row of the first electronic component array are located, so that the electronic components 121(J+1)-12N(J+1) in the (J+1)th row are thermally decomposed or photodecomposed to lose their viscosity, and all the electronic components 121(J+1)-12N(J+1) in the (J+1)th row are peeled off and bonded to the second upper surface 200A of the second substrate 200, where J is a natural number, and 1
Figure 112119959-A0305-02-0031-154
J
Figure 112119959-A0305-02-0031-155
(M-1). The fourth embodiment is described by taking the electronic components 121(J+1)~12N(J+1) in the (J+1)th row as an example in which all of them are selectively peeled off and bonded to the second upper surface 200A of the second substrate 200. However, in other embodiments of the present invention, part of the electronic components 121(J+1)~12N(J+1) in the (J+1)th row may be selectively peeled off and bonded to the second upper surface 200A of the second substrate 200 as needed.

如圖3B’所示,當J=1時,提供一具第一波長的第一光於該第一基板100上方,該具第一波長的第一光為例如但不限於一波長介於100奈米至12000奈米的光,並使並使該具第一波長的第一光照射該第一電子元件陣列的第1行的該等電子元件1211~12N1所在的該第一基板100,使其熱解或光解而失去黏性,並使第1行的該等電子元件1211~12N1全部被剝離並接合於該第二基板200的該第二上表面200A。本實施例四是以第1行的該等電子元件1211~12N1全部被選擇性地剝離並接合於該第二基板200的該第二上表面200A作為例示說明,惟根據本發明的其它實施例中,也可視需要使第1行的該等電子元件1211~12N1部分被選擇性地剝離並接合於該第二基板200的該第二上表面200A上。其次,如圖3C’所示,先使該第一基板100相對於該第二基板200沿該第一軸方向位移(X2-X1)的距離,X2>0且X1≠X2。然後,再使該具第一波長的第一光照射該第一電子元件陣 列的第2行的該等電子元件1212~12N2所在的該第一基板200,使其被熱解或光解而失去黏性,並使第2行的該等電子元件1212~12N2全部被剝離並接合於該第二基板200的該第二上表面200A。本實施例四是以第2行的該等電子元件1212~12N2全部被選擇性地剝離並接合於該第二基板200的該第二上表面200A作為例示說明,惟根據本發明的其它實施例中,也可視需要使第2行的該等電子元件1212~12N2部分被選擇性地剝離並接合於該第二基板200的該第二上表面200A上。同理,如圖3D’所示,第3~M行的其它電子元件1213~12NM也可利用前述的相同方法,選擇性地被全部剝離並接合於該第二基板200的該第二上表面200A。 As shown in FIG. 3B ′, when J=1, a first light with a first wavelength is provided above the first substrate 100. The first light with the first wavelength is, for example but not limited to, light with a wavelength between 100 nanometers and 12,000 nanometers. The first light with the first wavelength is made to irradiate the first substrate 100 where the electronic components 1211 to 12N1 of the first row of the first electronic component array are located, causing them to undergo thermal or photochemical decomposition and lose their viscosity. The electronic components 1211 to 12N1 of the first row are all peeled off and bonded to the second upper surface 200A of the second substrate 200. In the fourth embodiment, all the electronic components 1211-12N1 in the first row are selectively peeled off and bonded to the second upper surface 200A of the second substrate 200 as an example, but in other embodiments of the present invention, part of the electronic components 1211-12N1 in the first row can be selectively peeled off and bonded to the second upper surface 200A of the second substrate 200 as needed. Next, as shown in FIG. 3C', the first substrate 100 is first displaced relative to the second substrate 200 along the first axis by a distance (X2-X1), X2>0 and X1≠X2. Then, the first light with the first wavelength is irradiated on the first substrate 200 where the electronic components 1212-12N2 of the second row of the first electronic component array are located, so that the electronic components 1212-12N2 of the second row are thermally decomposed or photolyzed to lose their viscosity, and all of the electronic components 1212-12N2 of the second row are peeled off and bonded to the second upper surface 200A of the second substrate 200. The fourth embodiment is described by taking the selective peeling off and bonding of all of the electronic components 1212-12N2 of the second row to the second upper surface 200A of the second substrate 200 as an example, but in other embodiments of the present invention, part of the electronic components 1212-12N2 of the second row can also be selectively peeled off and bonded to the second upper surface 200A of the second substrate 200 as needed. Similarly, as shown in FIG. 3D', the other electronic components 1213-12NM in the 3rd to Mth rows can also be selectively peeled off and bonded to the second upper surface 200A of the second substrate 200 using the same method as described above.

如圖3E’所示,當位在該第一基板100的該等電子元件1211~12NM利用上述方法全部被選擇性剝離並接合於該第二基板200的該第二上表面200A後,便可在該第二基板200的該第二上表面200A形成該第二電子元件陣列(未標示),且該第二電子元件陣列之間的行距、列距分別為X2、Y1。其中,當X2>X1時,即第二電子元件陣列的行距X2大於第一電子元件陣列的行距X1;當X2<X1時,即第二電子元件陣列的行距X2小於第一電子元件陣列的行距X1。 As shown in FIG. 3E', when all the electronic components 1211-12NM located on the first substrate 100 are selectively peeled off and bonded to the second upper surface 200A of the second substrate 200 using the above method, the second electronic component array (not shown) can be formed on the second upper surface 200A of the second substrate 200, and the row spacing and column spacing between the second electronic component array are X2 and Y1 respectively. When X2>X1, the row spacing X2 of the second electronic component array is greater than the row spacing X1 of the first electronic component array; when X2<X1, the row spacing X2 of the second electronic component array is less than the row spacing X1 of the first electronic component array.

如圖3F’~3H’所示,本實施例四更可將位在該第二基板200的該等電子元件1211~12NM進一步地全部或部分轉移至該第三基板300,並在該第三基板300形成一個第三電子元件陣列(未標示),且該第三電子元件陣列(未標示)之行距與列距分別為X2、Y2。 As shown in Figures 3F'~3H', the fourth embodiment can further transfer all or part of the electronic components 1211~12NM located on the second substrate 200 to the third substrate 300, and form a third electronic component array (not marked) on the third substrate 300, and the row spacing and column spacing of the third electronic component array (not marked) are X2 and Y2 respectively.

如圖3F’~3H’所示,提供一第三基板300,並將該第三基板300設置於該第二基板200下方,該第三基板300具有相對的第三上表面300A與第三下表 面300B,且該第二基板200的該第二上表面200A面向該第三基板300的該第三上表面300A。然後,提供一具第二波長的第二光於該第二基板200上方,該具第二波長的第二光為例如但不限於一波長介於100奈米至12000奈米的光,並使該具第二波長的第二光照射該第二電子元件陣列的第K列的該等電子元件12K1~12KM所在的該第二基板200,K為自然數,且1

Figure 112119959-A0305-02-0033-55
K
Figure 112119959-A0305-02-0033-56
(N-1),使該第二基板200被熱解或光解失去黏性,並使第K列的該等電子元件12K1~12KM全部或部分被剝離並接合於該第三基板的該第三上表面。本實施例四是以第K列的該等電子元件12K1~12KM全部被選擇性地剝離並接合於該第二基板200的該第二上表面200A作為例示說明,惟根據本發明的其它實施例中,也可視需要使第K列的該等電子元件12K1~12KM部分被選擇性地剝離並接合於該第二基板200的該第二上表面200A上。然後,使該第二基板200相對於該第三基板300沿該第二軸方向位移(Y2-Y1)的距離,其中Y2>0且Y1≠Y2,然後使該具第二波長的第二光照射該第二電子元件陣列的第(K+1)列的該等電子元件12(K+1)1~12(K+1)M所在的該第二基板200,使該第二基板200被熱解或光解而失去黏性,並使第(K+1)列的該等電子元件12(K+1)1~12(K+1)M全部或部分被剝離並接合於該第三基板300的該第三上表面300A。當位在該第二基板200的該等電子元件1211~12NM全部或部分被選擇性剝離並接合於該第三基板300的該第三上表面300A後,便可在該第三基板300形成一第三電子元件陣列(未標示),且該第三電子元件陣列(未標示)之行距與列距分別為X2、Y2。 As shown in FIGS. 3F' to 3H', a third substrate 300 is provided and disposed below the second substrate 200. The third substrate 300 has a third upper surface 300A and a third lower surface 300B opposite to each other, and the second upper surface 200A of the second substrate 200 faces the third upper surface 300A of the third substrate 300. Then, a second light with a second wavelength is provided above the second substrate 200. The second light with a second wavelength is, for example but not limited to, a light with a wavelength between 100 nanometers and 12000 nanometers, and the second light with a second wavelength is used to illuminate the second substrate 200 where the electronic components 12K1 to 12KM of the Kth row of the second electronic component array are located, where K is a natural number, and 1
Figure 112119959-A0305-02-0033-55
K
Figure 112119959-A0305-02-0033-56
(N-1), so that the second substrate 200 is pyrolyzed or photolyzed to lose its viscosity, and the electronic components 12K1-12KM in the Kth column are all or partially peeled off and bonded to the third upper surface of the third substrate. The fourth embodiment is described by taking the electronic components 12K1-12KM in the Kth column as an example to be selectively peeled off and bonded to the second upper surface 200A of the second substrate 200, but in other embodiments of the present invention, the electronic components 12K1-12KM in the Kth column may also be partially peeled off and bonded to the second upper surface 200A of the second substrate 200 as needed. Then, the second substrate 200 is displaced relative to the third substrate 300 along the second axis direction by a distance of (Y2-Y1), wherein Y2>0 and Y1≠Y2, and then the second light with a second wavelength is irradiated on the second substrate 200 where the electronic components 12(K+1)1~12(K+1)M in the (K+1)th column of the second electronic component array are located, so that the second substrate 200 is thermally decomposed or photolyzed to lose its viscosity, and the electronic components 12(K+1)1~12(K+1)M in the (K+1)th column are completely or partially peeled off and bonded to the third upper surface 300A of the third substrate 300. When all or part of the electronic components 1211~12NM located on the second substrate 200 are selectively peeled off and bonded to the third upper surface 300A of the third substrate 300, a third electronic component array (not marked) can be formed on the third substrate 300, and the row spacing and column spacing of the third electronic component array (not marked) are X2 and Y2 respectively.

如圖3F’所示,當K=1時,提供一具第二波長的第二光於該第二基板200上方,該具第二波長的第二光為例如但不限於一波長介於100奈米至12000奈米的光,並使該具第二波長的第二光照射該第二電子元件陣列的第1列的該等電子元件1211~121M所在的該第二基板200,使該第二基板200被熱解或光解失去黏性,並使第1列的該等電子元件1211~121M全部被剝離並接合於該第三基板 的該第三上表面。本實施例四是以第1列的該等電子元件1211~121M全部被選擇性地剝離並接合於該第二基板200的該第二上表面200A作為例示說明,惟根據本發明的其它實施例中,也可視需要使第1列的該等電子元件1211~121M部分被選擇性地剝離並接合於該第二基板200的該第二上表面200A上。 As shown in FIG. 3F', when K=1, a second light with a second wavelength is provided above the second substrate 200, and the second light with a second wavelength is, for example but not limited to, a light with a wavelength between 100 nanometers and 12000 nanometers, and the second light with the second wavelength irradiates the second substrate 200 where the electronic components 1211-121M of the first row of the second electronic component array are located, so that the second substrate 200 is thermally decomposed or photolyzed to lose its viscosity, and the electronic components 1211-121M of the first row are all peeled off and bonded to the third upper surface of the third substrate. In the fourth embodiment, all the electronic components 1211-121M in the first row are selectively peeled off and bonded to the second upper surface 200A of the second substrate 200 as an example. However, in other embodiments of the present invention, part of the electronic components 1211-121M in the first row can also be selectively peeled off and bonded to the second upper surface 200A of the second substrate 200 as needed.

然後,如圖3G’所示,使該第二基板200相對於該第三基板300沿該第二軸方向位移(Y2-Y1)的距離,其中Y2>0且Y1≠Y2,然後使該具第二波長的第二光照射該第二電子元件陣列的第2列的該等電子元件1221~122M所在的該第二基板200,使該第二基板200被熱解或光解而失去黏性,並使第2列的該等電子元件1221~122M全部被剝離並接合於該第三基板300的該第三上表面300A。本實施例四是以第2列的該等電子元件1221~122M全部被選擇性地剝離並接合於該第二基板200的該第二上表面200A作為例示說明,惟根據本發明的其它實施例中,也可視需要使第2列的該等電子元件1221~122M部分被選擇性地剝離並接合於該第二基板200的該第二上表面200A上。同理,第3~N列的其它電子元件1231~12NM也可利用前述的相同方法,選擇性地被全部或部分剝離並接合於該第三基板300的該第三上表面300A。 Then, as shown in FIG3G′, the second substrate 200 is displaced relative to the third substrate 300 along the second axis direction by a distance (Y2-Y1), wherein Y2>0 and Y1≠Y2, and then the second light having a second wavelength is irradiated on the second substrate 200 where the electronic components 1221~122M of the second row of the second electronic component array are located, so that the second substrate 200 is thermally decomposed or photolyzed to lose its viscosity, and all the electronic components 1221~122M in the second row are peeled off and bonded to the third upper surface 300A of the third substrate 300. In the fourth embodiment, all the electronic components 1221-122M in the second row are selectively peeled off and bonded to the second upper surface 200A of the second substrate 200 as an example. However, in other embodiments of the present invention, part of the electronic components 1221-122M in the second row can also be selectively peeled off and bonded to the second upper surface 200A of the second substrate 200 as needed. Similarly, the other electronic components 1231-12NM in the third to Nth rows can also be selectively peeled off in whole or in part and bonded to the third upper surface 300A of the third substrate 300 using the same method as described above.

如圖3H’所示,當位在該第二基板200的該等電子元件1211~12NM全部被選擇性剝離並接合於該第三基板300的該第三上表面300A後,便可在該第三基板300形成一第三電子元件陣列(未標示),且該第三電子元件陣列(未標示)之行距與列距分別為X2、Y2。其中,當Y2>Y1時,即第三電子元件陣列的列距大於第二電子元件陣列的列距;當Y2<Y1時,即第三電子元件陣列的列距小於第二電子元件陣列的列距。 As shown in FIG. 3H', when all the electronic components 1211-12NM located on the second substrate 200 are selectively peeled off and bonded to the third upper surface 300A of the third substrate 300, a third electronic component array (not marked) can be formed on the third substrate 300, and the row spacing and column spacing of the third electronic component array (not marked) are X2 and Y2 respectively. When Y2>Y1, the column spacing of the third electronic component array is greater than the column spacing of the second electronic component array; when Y2<Y1, the column spacing of the third electronic component array is less than the column spacing of the second electronic component array.

本實施例四是以位在第二基板200的第二電子陣列的該等電子元件1211~12NM全部被選擇性地剝離並接合於該第三基板300的該第三上表面300A作為例示說明,惟根據本發明的其它實施例中,也可視需要使位在第二基 板200的第二電子陣列的該等電子元件1211~12NM部分被選擇性地剝離並接合於該第三基板300的該第三上表面300A上。 In the fourth embodiment, all the electronic components 1211-12NM located in the second electronic array of the second substrate 200 are selectively peeled off and bonded to the third upper surface 300A of the third substrate 300 as an example. However, in other embodiments of the present invention, part of the electronic components 1211-12NM located in the second electronic array of the second substrate 200 may be selectively peeled off and bonded to the third upper surface 300A of the third substrate 300 as needed.

實施例五 Embodiment 5

以下將參照圖4A~4E詳細說明本實施例五所揭示的一種可調整間距的巨量轉移電子元件的方法。 The following will describe in detail a method for mass transfer of electronic components with adjustable spacing disclosed in this embodiment 5 with reference to Figures 4A to 4E.

首先,,請參閱圖4A。如圖4A所示,提供一第一基板100,該第一基板100具有相對的第一上表面100A與第一下表面100B,其中該第一基板100的該第一上表面100A具有複數個電子元件1211~12NM,且該等電子元件1211~12NM分別沿第一軸方向與第二軸方向排列,形成一個由M行電子元件乘以N列電子元件排列所形成的第一電子元件陣列(未標示),其中,該第一基板100為一熱解膠膜或一光解膠膜,該第一軸方向與該第二軸方向實質互相垂直,M、N為大於1的自然數,且該第一電子元件陣列之行距、列距分別為X1、Y1,且X1、Y1>0。本實施例一是以第一軸方向為X軸方向,第二軸方向為Y軸方向作為例示說明,惟在根據本發明的其它實施例中,也可視需要選擇第一軸方向為Y軸方向,第二軸方向為X軸方向。 First, please refer to FIG. 4A. As shown in FIG. 4A, a first substrate 100 is provided, and the first substrate 100 has a first upper surface 100A and a first lower surface 100B opposite to each other, wherein the first upper surface 100A of the first substrate 100 has a plurality of electronic components 1211-12NM, and the electronic components 1211-12NM are arranged along the first axis direction and the second axis direction, respectively, to form a first electronic component array (not shown) formed by arranging M rows of electronic components by N columns of electronic components, wherein the first substrate 100 is a pyrolytic adhesive film or a photolytic adhesive film, the first axis direction and the second axis direction are substantially perpendicular to each other, M and N are natural numbers greater than 1, and the row spacing and column spacing of the first electronic component array are X1 and Y1, respectively, and X1 and Y1>0. In the first embodiment, the first axis direction is the X axis direction and the second axis direction is the Y axis direction as an example for explanation. However, in other embodiments according to the present invention, the first axis direction can be selected as the Y axis direction and the second axis direction can be selected as the X axis direction as needed.

本實施例五的該等電子元件1211~12NM為例如但不限於選自一個以上由發光二極體、雷射二極體及半導體元件所構成之群組。其中,該等發光二極體為例如但不限於所發出的光為紅光、綠光、藍光、黃光、白光、紅外光或紫外光;該等雷射二極體的波長為例如但不限於介於390奈米至1700奈米;該等半導體元件為為例如但不限於選自一個以上由處理器、記憶體IC、微元件IC、邏輯IC及類比IC所構成的群組。 The electronic components 1211~12NM of the fifth embodiment are, for example, but not limited to, selected from one or more groups consisting of light-emitting diodes, laser diodes, and semiconductor components. The light-emitting diodes are, for example, but not limited to, emitting red light, green light, blue light, yellow light, white light, infrared light, or ultraviolet light; the wavelength of the laser diodes is, for example, but not limited to, between 390 nanometers and 1700 nanometers; the semiconductor components are, for example, but not limited to, selected from one or more groups consisting of processors, memory ICs, micro-component ICs, logic ICs, and analog ICs.

其次,請參照圖4B~4C。如圖4B~4C所示,提供一第二基板200,並將該第二基板200設置於該第一基板100下方,該第二基板200具有相對的 第二上表面200A與第二下表面200B,且該第一基板100的該第一上表面100A面向該第二基板200的該第二上表面200A,其中,該第二基板200為一熱解膠膜或一光解膠膜。 Next, please refer to Figures 4B to 4C. As shown in Figures 4B to 4C, a second substrate 200 is provided and disposed below the first substrate 100. The second substrate 200 has a second upper surface 200A and a second lower surface 200B opposite to each other, and the first upper surface 100A of the first substrate 100 faces the second upper surface 200A of the second substrate 200, wherein the second substrate 200 is a pyrolytic adhesive film or a photolytic adhesive film.

其次,將位在該第一基板的第R1列的該等電子元件作為該第一基板100沿該第一軸方向的一第一基準線110,將位在該第二基板200的第R2列的該等電子元件作為該第二基板200沿該第一軸方向的一第二基準線210,並使該第一基準線110對準該第二基準線210。然後,提供一具第一波長的第一光於該第一基板100上方,該具第一波長的第一光為一波長例如但不限於介於100奈米至12000奈米的光,使該具第一波長的第一光照射位在該第一電子元件陣列的第N1列的該電子元件12(N1)J或該等電子元件12(N1)1~12(N1)M所在的該第一基板100,使其被熱解或光解而失去黏性,並使位在該第一基板的第N1列的該電子元件12(N1)J或該等電子元件12(N1)1~12(N1)M被選擇性剝離,並接合至該第二基板200的該第二上表面200A,使其成為位在該第二基板200的該第二上表面200A的第二電子元件陣列的第N2列的該電子元件22(N2)(j)或該等電子元件22(N2)1~22(N2)P,其中R1、R2、N1、N2、J、j為自然數,N1

Figure 112119959-A0305-02-0036-57
N,N2
Figure 112119959-A0305-02-0036-58
Q,1
Figure 112119959-A0305-02-0036-59
R1
Figure 112119959-A0305-02-0036-60
N1,1
Figure 112119959-A0305-02-0036-61
R2
Figure 112119959-A0305-02-0036-62
N2,1
Figure 112119959-A0305-02-0036-63
J
Figure 112119959-A0305-02-0036-64
M,1
Figure 112119959-A0305-02-0036-156
j
Figure 112119959-A0305-02-0036-66
P,且P為大於1的自然數,P≠M。如圖4C所示,當位在該第一基板100的該等電子元件1211~12NM全部或部分被轉移至該第二基板200後,便可在該第二基板200的該第二上表面200形成一個由P行電子元件乘以Q列電子元件排列所形成的第二電子元件陣列(未標示),其中P、Q為大於1的自然數,P≠M及/或Q≠N,且其中該第二電子元件陣列之列距為Y2,Y2>0且Y1≠Y2。 Next, the electronic components located in the R1th row of the first substrate are used as a first reference line 110 of the first substrate 100 along the first axis direction, and the electronic components located in the R2th row of the second substrate 200 are used as a second reference line 210 of the second substrate 200 along the first axis direction, and the first reference line 110 is aligned with the second reference line 210. Then, a first light with a first wavelength is provided above the first substrate 100, and the first light with a first wavelength is a wavelength such as but not limited to light between 100 nanometers and 12000 nanometers, so that the first light with a first wavelength irradiates the first substrate 100 where the electronic components 12(N1)J or the electronic components 12(N1)1~12(N1)M located in the N1th row of the first electronic component array are located, so that the electronic components are thermally decomposed or photodecomposed to lose viscosity, and the first light located in the N1th row of the first substrate is irradiated with the first light. The electronic components 12(N1)J or the electronic components 12(N1)1-12(N1)M in the N2th row are selectively peeled off and bonded to the second upper surface 200A of the second substrate 200, so that they become the electronic components 22(N2)(j) or the electronic components 22(N2)1-22(N2)P in the N2th row of the second electronic component array located on the second upper surface 200A of the second substrate 200, wherein R1, R2, N1, N2, J, j are natural numbers, and N1
Figure 112119959-A0305-02-0036-57
N, N2
Figure 112119959-A0305-02-0036-58
Q, 1
Figure 112119959-A0305-02-0036-59
R1
Figure 112119959-A0305-02-0036-60
N1,1
Figure 112119959-A0305-02-0036-61
R2
Figure 112119959-A0305-02-0036-62
N2,1
Figure 112119959-A0305-02-0036-63
J
Figure 112119959-A0305-02-0036-64
M, 1
Figure 112119959-A0305-02-0036-156
j
Figure 112119959-A0305-02-0036-66
P, and P is a natural number greater than 1, and P≠M. As shown in FIG4C , when all or part of the electronic components 1211-12NM located on the first substrate 100 are transferred to the second substrate 200, a second electronic component array (not shown) formed by P rows of electronic components multiplied by Q columns of electronic components can be formed on the second upper surface 200 of the second substrate 200, wherein P and Q are natural numbers greater than 1, P≠M and/or Q≠N, and wherein the row pitch of the second electronic component array is Y2, Y2>0 and Y1≠Y2.

其中,位在該第一基板100的第N1列的該電子元件12(N1)J或該等電子元件12(N1)1~12(N1)M與第一基板100的第一基準線110的間距△Y1=(N1-R1)*Y1;位在該第二基板200的第N2列的該電子元件22(N2)J或該等電子元件22(N2)1~12(N2)P與第二基板200的第二基準線210的間距△Y2=(N1-R2)*Y2。因此,當位在該第一基板100的該第一電子元件陣列的第N1列的該電子元件12(N1)J或該等電子元件12(N1)1~12(N1)M被轉移至該第二基板200並成為該第二電子元件陣列的第N2列的該電子元件22(N2)J或該等電子元件22(N2)1~12(N2)P時,其沿該第二軸方向(Y軸方向)的相對移動距離△Y為[(N2-R2)*Y2-(N1-R1)*Y1]。 Among them, the distance between the electronic component 12 (N1) J or the electronic components 12 (N1) 1~12 (N1) M located in the N1th row of the first substrate 100 and the first baseline 110 of the first substrate 100 is △Y1=(N1-R1)*Y1; the distance between the electronic component 22 (N2) J or the electronic components 22 (N2) 1~12 (N2) P located in the N2th row of the second substrate 200 and the second baseline 210 of the second substrate 200 is △Y2=(N1-R2)*Y2. Therefore, when the electronic component 12(N1)J or the electronic components 12(N1)1~12(N1)M located in the N1th row of the first electronic component array of the first substrate 100 are transferred to the second substrate 200 and become the electronic component 22(N2)J or the electronic components 22(N2)1~12(N2)P in the N2th row of the second electronic component array, the relative movement distance △Y along the second axis direction (Y axis direction) is [(N2-R2)*Y2-(N1-R1)*Y1].

如圖4B~4C所示,當R1=1、R2=2時,即該第一基板的第1列的該等電子元件作為該第一基板100沿該第一軸方向的一第一基準線110,將位在該第二基板200的第2列的該等電子元件作為該第二基板200沿該第一軸方向的一第二基準線210,並使該第一基準線110對準該第二基準線210。然後,提供一具第一波長的第一光於該第一基板100上方,該具第一波長的第一光為一波長例如但不限於介於100奈米至12000奈米的光,使該具第一波長的第一光照射位在該第一電子元件陣列的第N1列的該電子元件12(N1)J或該等電子元件12(N1)1~12(N1)M所在的該第一基板100,使其被熱解或光解而失去黏性,並使位在該第一基板的第N1列的該電子元件12(N1)J或該等電子元件12(N1)1~12(N1)M被選擇性剝離,並接合至該第二基板200的該第二上表面200A,並成為該第二電子元件陣列的第N2列的該電子元件22(N2)J或該等電子元件22(N2)1~12(N2)P,其中N1、N2為自然數,N1

Figure 112119959-A0305-02-0037-67
N,N2
Figure 112119959-A0305-02-0037-68
Q。 As shown in Figures 4B~4C, when R1=1 and R2=2, the electronic components in the first row of the first substrate serve as a first baseline 110 of the first substrate 100 along the first axis direction, and the electronic components in the second row of the second substrate 200 serve as a second baseline 210 of the second substrate 200 along the first axis direction, and the first baseline 110 is aligned with the second baseline 210. Then, a first light with a first wavelength is provided above the first substrate 100. The first light with a first wavelength is a light with a wavelength, for example but not limited to, between 100 nanometers and 12,000 nanometers. The first light with the first wavelength irradiates the first substrate 100 where the electronic element 12 (N1) J or the electronic elements 12 (N1) 1 to 12 (N1) M located in the N1th row of the first electronic element array are located, so that the electronic element 12 (N1) 1 to 12 (N1) M are thermally decomposed or photo-decomposed to lose the first substrate 100. The electronic component 12(N1)J or the electronic components 12(N1)1-12(N1)M located in the N1th row of the first substrate is selectively peeled off and bonded to the second upper surface 200A of the second substrate 200 to become the electronic component 22(N2)J or the electronic components 22(N2)1-12(N2)P in the N2th row of the second electronic component array, wherein N1 and N2 are natural numbers, and N1 is
Figure 112119959-A0305-02-0037-67
N, N2
Figure 112119959-A0305-02-0037-68
Q.

如圖4C所示,位在該第一基板100的第N1列的該電子元件12(N1)J或該等電子元件12(N1)1~12(N1)M與第一基板100的第一基準線110的間距△Y1=(N1-1)*Y1;位在該第二基板200的第N2列的該電子元件22(N2)J或該等電子元件22(N2)1~22(N2)P與第二基板200的第二基準線110的間距△Y2=(N2-2)*Y2。因此,當位在該第一基板100的該第一電子元件陣列的第N1列的該電子元件12(N1)J或該等電子元件12(N1)1~12(N1)M被轉移至該第二基板200並成為該第二電子元件陣列的第N2列的該電子元件22(N2)J或該等電子元件22(N2)1~12(N2)P時,其沿該第二軸方向的相對移動距離△Y=△Y2-△Y1,即△Y為[(N2-2)*Y2-(N1-1)*Y1]。 As shown in FIG. 4C , the distance between the electronic component 12 (N1) J or the electronic components 12 (N1) 1 to 12 (N1) M located in the N1th row of the first substrate 100 and the first baseline 110 of the first substrate 100 is △Y1=(N1-1)*Y1; the distance between the electronic component 22 (N2) J or the electronic components 22 (N2) 1 to 22 (N2) P located in the N2th row of the second substrate 200 and the second baseline 110 of the second substrate 200 is △Y2=(N2-2)*Y2. Therefore, when the electronic component 12(N1)J or the electronic components 12(N1)1~12(N1)M located in the N1th row of the first electronic component array of the first substrate 100 are transferred to the second substrate 200 and become the electronic component 22(N2)J or the electronic components 22(N2)1~12(N2)P in the N2th row of the second electronic component array, the relative movement distance △Y along the second axis direction is △Y=△Y2-△Y1, that is, △Y is [(N2-2)*Y2-(N1-1)*Y1].

本實施例五更可進一步將位在該第二基板200的該第二陣列轉移至一第三基板300,並在該第三基板300形成一個由U行電子元件乘以V列電子元件排列所形成的第三電子元件陣列(未標示),且該第三電子元件陣列之行距與列距分別為X2、Y2,其中U、V為大於1的自然數,X2、Y2>0,且X1≠X2,Y1≠Y2。 The fifth embodiment of the present invention can further transfer the second array located on the second substrate 200 to a third substrate 300, and form a third electronic element array (not shown) formed by U rows of electronic elements multiplied by V columns of electronic elements on the third substrate 300, and the row spacing and column spacing of the third electronic element array are X2 and Y2 respectively, where U and V are natural numbers greater than 1, X2 and Y2>0, and X1≠X2, Y1≠Y2.

如圖4D~4F所示,本實施例五更可提供一第三基板300,並將該第三基板300設置於該第二基板200下方,該第三基板300具有相對的第三上表面300A與第三下表面300B,且該第二基板200的該第二上表面200A面向該第三基板300的該第三上表面300A將位在該第二基板200的該第二電子元件陣列轉移至該第三基板300,並在該第三基板300的該第三上表面300A形成一個由U行電子元件乘以V列電子元件排列所形成的第三電子元件陣列(未標示),且該第三電子元件陣列之行距與列距分別為X2、Y2,其中U、V為大於1的自然數。 As shown in FIGS. 4D to 4F, the fifth embodiment may further provide a third substrate 300, and the third substrate 300 is disposed below the second substrate 200. The third substrate 300 has a third upper surface 300A and a third lower surface 300B opposite to each other, and the second upper surface 200A of the second substrate 200 faces the third upper surface 300A of the third substrate 300, and the second electronic component array located on the second substrate 200 is transferred to the third substrate 300, and a third electronic component array (not shown) formed by U rows of electronic components multiplied by V columns of electronic components is formed on the third upper surface 300A of the third substrate 300, and the row spacing and column spacing of the third electronic component array are X2 and Y2 respectively, where U and V are natural numbers greater than 1.

將位在該第二基板200的第S1行的該等電子元件221(S1)~22Q(S1)作為該第二基板200沿該第二軸方向的一第三基準線250,將位在該第三基板300的第S2行的該等電子元件221(S2)~22V(S2)作為該第三基板300沿該第二軸方向的一第四基準線350,並使該第三基準線250對準該第四基準線350。然後,提供一具第二波長的第二光於該第二基板上方,該具第二波長的第二光為一波長介於100奈米至12000奈米的光,並使該具第二波長的第二光照射位在該第二電子元件陣列的第M1行的該電子元件22K(M1)或該等電子元件221(M1)~22Q(M1)所在的該第二基板200,使其被熱解或光解而失去黏性且將位在該第二基板的第M1行的該電子元件22K(M1)或該等電子元件221(M1)~22Q(M1)被選擇性剝離,並接合至該第三基板300的該第三上表面300A,並成為該第三電子元件陣列的第M2行的該電子元件32k(M2)或該等電子元件321(M2)~32V(M2),其中S1、S2、M1、M2、K、k為自然數,M1

Figure 112119959-A0305-02-0039-69
M,M2
Figure 112119959-A0305-02-0039-70
U,1
Figure 112119959-A0305-02-0039-71
S1
Figure 112119959-A0305-02-0039-72
M1,1
Figure 112119959-A0305-02-0039-73
S2
Figure 112119959-A0305-02-0039-74
M2,且1
Figure 112119959-A0305-02-0039-75
K
Figure 112119959-A0305-02-0039-76
Q,1
Figure 112119959-A0305-02-0039-77
k
Figure 112119959-A0305-02-0039-78
V。 The electronic components 221 (S1) to 22Q (S1) located in the S1th row of the second substrate 200 are used as a third baseline 250 of the second substrate 200 along the second axis direction, and the electronic components 221 (S2) to 22V (S2) located in the S2th row of the third substrate 300 are used as a fourth baseline 350 of the third substrate 300 along the second axis direction, and the third baseline 250 is aligned with the fourth baseline 350. Then, a second light with a second wavelength is provided above the second substrate, wherein the second light with a second wavelength is a light with a wavelength between 100 nanometers and 12000 nanometers, and the second light with the second wavelength is irradiated on the second substrate 200 where the electronic element 22K (M1) or the electronic elements 221 (M1) to 22Q (M1) located in the M1th row of the second electronic element array are located, so that the electronic element 22K (M1) or the electronic elements 221 (M1) to 22Q (M1) are pyrolyzed or photolyzed to lose viscosity and the electronic elements located in the second substrate ... The electronic component 22K (M1) or the electronic components 221 (M1) to 22Q (M1) of the M1th row of the second substrate is selectively peeled off and bonded to the third upper surface 300A of the third substrate 300 to become the electronic component 32k (M2) or the electronic components 321 (M2) to 32V (M2) of the M2th row of the third electronic component array, wherein S1, S2, M1, M2, K, k are natural numbers, M1
Figure 112119959-A0305-02-0039-69
M, M2
Figure 112119959-A0305-02-0039-70
U, 1
Figure 112119959-A0305-02-0039-71
S1
Figure 112119959-A0305-02-0039-72
M1,1
Figure 112119959-A0305-02-0039-73
S2
Figure 112119959-A0305-02-0039-74
M2, and 1
Figure 112119959-A0305-02-0039-75
K
Figure 112119959-A0305-02-0039-76
Q, 1
Figure 112119959-A0305-02-0039-77
k
Figure 112119959-A0305-02-0039-78
V.

位在該第二基板200的第M1行的該電子元件22K(M1)或該等電子元件221(M1)~22Q(M1)與第二基板200的第三基準線250的間距△X1=(M1-S1)*X1;位在該第三基板300的第M2行的該電子元件32k(M2)或該等電子元件321(M2)~32V(M2)與第三基板300的第四基準線350的間距△X2=(M1-S2)*X2。因此,當位在該第二基板200的第M1行的該電子元件22K(M1)或該等電子元件221(M1)~22Q(M1)被轉移至該第三基板300並成為該第三電子元件陣列的第M2列的該電子元件32k(M2)或該等電子元件321(M2)~32V(M2)時,其沿該第一軸方向(X軸方向)的相對移動距離△X為[(M2-S2)*X2-(M1-S1)*X1] The distance between the electronic component 22K (M1) or the electronic components 221 (M1) to 22Q (M1) located in the M1th row of the second substrate 200 and the third baseline 250 of the second substrate 200 is △X1 = (M1-S1)*X1; the distance between the electronic component 32k (M2) or the electronic components 321 (M2) to 32V (M2) located in the M2th row of the third substrate 300 and the fourth baseline 350 of the third substrate 300 is △X2 = (M1-S2)*X2. Therefore, when the electronic component 22K (M1) or the electronic components 221 (M1) to 22Q (M1) located in the M1th row of the second substrate 200 are transferred to the third substrate 300 and become the electronic component 32k (M2) or the electronic components 321 (M2) to 32V (M2) in the M2th row of the third electronic component array, the relative movement distance △X along the first axis direction (X axis direction) is [(M2-S2)*X2-(M1-S1)*X1]

如圖4D所示,當S1=1、S2=2時,即將位在該第二基板200的第1行的該等電子元件2211~22Q1作為該第二基板200沿該第二軸方向的一第三基準線250,將位在該第三基板300的第2行的該等電子元件2212~22V2作為該第三基板300沿該第二軸方向的一第四基準線350,並使該第三基準線250對準該第四基準線350。然後,提供一具第二波長的第二光於該第二基板上方,該具第二波長的第二光為一波長介於100奈米至12000奈米的光,並使該具第二波長的第二光照射位在該第二電子元件陣列的第M1行的該電子元件22K(M1)或該等電子元件221(M1)~22Q(M1)所在的該第二基板200,使其被熱解或光解而失去黏性且將位在該第二基板的第M1行的該電子元件22K(M1)或該等電子元件221(M1)~22Q(M1)被選擇性剝離,並接合至該第三基板300的該第三上表面300A,並成為該第三電子元件陣列的第M2行的該電子元件32k(M2)或該等電子元件321(M2)~32V(M2)。其中M1、M2、K、k為自然數,M1

Figure 112119959-A0305-02-0040-79
M,M2
Figure 112119959-A0305-02-0040-80
U,且1
Figure 112119959-A0305-02-0040-81
K
Figure 112119959-A0305-02-0040-82
Q,1
Figure 112119959-A0305-02-0040-83
k
Figure 112119959-A0305-02-0040-84
V。 As shown in FIG. 4D , when S1=1 and S2=2, the electronic components 2211~22Q1 located in the first row of the second substrate 200 are used as a third baseline 250 of the second substrate 200 along the second axis direction, and the electronic components 2212~22V2 located in the second row of the third substrate 300 are used as a fourth baseline 350 of the third substrate 300 along the second axis direction, and the third baseline 250 is aligned with the fourth baseline 350. Then, a second light with a second wavelength is provided above the second substrate, wherein the second light with the second wavelength is a light with a wavelength between 100 nanometers and 12,000 nanometers, and the second light with the second wavelength is irradiated on the second substrate 200 where the electronic component 22K (M1) or the electronic components 221 (M1) to 22Q (M1) located in the M1th row of the second electronic component array are located, so that the electronic component 22K (M1) or the electronic components 221 (M1) to 22Q (M1) located in the M1th row of the second substrate are thermally decomposed or photolyzed to lose viscosity and the electronic component 22K (M1) or the electronic components 221 (M1) to 22Q (M1) located in the M1th row of the second substrate are selectively peeled off and bonded to the third upper surface 300A of the third substrate 300 to become the electronic component 32k (M2) or the electronic components 321 (M2) to 32V (M2) in the M2th row of the third electronic component array. Among them, M1, M2, K, k are natural numbers, M1
Figure 112119959-A0305-02-0040-79
M, M2
Figure 112119959-A0305-02-0040-80
U, and 1
Figure 112119959-A0305-02-0040-81
K
Figure 112119959-A0305-02-0040-82
Q, 1
Figure 112119959-A0305-02-0040-83
k
Figure 112119959-A0305-02-0040-84
V.

如圖4E所示,位在該第二基板200的第M1行的該電子元件22K(M1)或該等電子元件221(M1)~22Q(M1)與第二基板200的第三基準線250的間距△X1=(M1-1)*X1;位在該第三基板300的第M2行的該電子元件32k(M2)或該等電子元件321(M2)~32V(M2)與第三基板300的第四基準線350的間距△X2=(M1-2)*X2。因此,當位在該第二基板200的第M1行的該電子元件22K(M1)或該等電子元件221(M1)~22Q(M1)被轉移至該第三基板300並成為該第三電子元件陣列的第M2列的該電子元件32k(M2)或該等電子元件321(M2)~32V(M2)時,其沿該第一軸方向(X軸方向)的相對移動距離△X等於△X2-△X1,即△X=[(M2-2)*X2-(M1-1)*X1]。 As shown in FIG. 4E , the distance between the electronic component 22K (M1) or the electronic components 221 (M1) to 22Q (M1) located in the M1th row of the second substrate 200 and the third baseline 250 of the second substrate 200 is △X1=(M1-1)*X1; the distance between the electronic component 32k (M2) or the electronic components 321 (M2) to 32V (M2) located in the M2th row of the third substrate 300 and the fourth baseline 350 of the third substrate 300 is △X2=(M1-2)*X2. Therefore, when the electronic component 22K (M1) or the electronic components 221 (M1) to 22Q (M1) located in the M1th row of the second substrate 200 is transferred to the third substrate 300 and becomes the electronic component 32k (M2) or the electronic components 321 (M2) to 32V (M2) in the M2th row of the third electronic component array, the relative movement distance △X along the first axis direction (X axis direction) is equal to △X2-△X1, that is, △X=[(M2-2)*X2-(M1-1)*X1].

如圖4E所示,當位在該第二基板200的該等電子元件2211~12QP被選擇性剝離並接合於該第三基板300的該第三上表面300A後,便可在該第三基板300形成一第三電子元件陣列(未標示),且該第三電子元件陣列(未標示)之行距與列距分別為X2、Y2。 As shown in FIG. 4E , when the electronic components 2211-12QP on the second substrate 200 are selectively peeled off and bonded to the third upper surface 300A of the third substrate 300 , a third electronic component array (not shown) can be formed on the third substrate 300 , and the row and column spacings of the third electronic component array (not shown) are X2 and Y2 respectively.

實施例六 Implementation Example 6

以下將參照圖4A’~4E’詳細說明本實施例六所揭示的一種可調整間距的巨量轉移電子元件的方法。 The following will describe in detail a method for mass transfer of electronic components with adjustable spacing disclosed in Example 6 with reference to Figures 4A'~4E'.

首先,,請參閱圖4A’。如圖4A’所示,提供一第一基板100,該第一基板100具有相對的第一上表面100A與第一下表面100B,其中該第一基板100的該第一上表面100A具有複數個電子元件1211~12NM,且該等電子元件1211~12NM分別沿第一軸方向與第二軸方向排列,形成一個由M行電子元件乘以N列電子元件排列所形成的第一電子元件陣列(未標示),其中,該第一基板100為一熱解膠膜或一光解膠膜,該第一軸方向與該第二軸方向實質互相垂直,M、N為大於1的自然數,且該第一電子元件陣列之行距、列距分別為X1、Y1,且X1、Y1>0。本實施例一是以第一軸方向為X軸方向,第二軸方向為Y軸方向作為例示說明,惟在根據本發明的其它實施例中,也可視需要選擇第一軸方向為Y軸方向,第二軸方向為X軸方向。 First, please refer to FIG. 4A'. As shown in FIG. 4A', a first substrate 100 is provided, and the first substrate 100 has a first upper surface 100A and a first lower surface 100B opposite to each other, wherein the first upper surface 100A of the first substrate 100 has a plurality of electronic components 1211-12NM, and the electronic components 1211-12NM are arranged along the first axis direction and the second axis direction, respectively, to form a first electronic component array (not shown) formed by arranging M rows of electronic components by N columns of electronic components, wherein the first substrate 100 is a pyrolytic adhesive film or a photolytic adhesive film, the first axis direction and the second axis direction are substantially perpendicular to each other, M and N are natural numbers greater than 1, and the row spacing and column spacing of the first electronic component array are X1 and Y1, respectively, and X1 and Y1>0. In the first embodiment, the first axis direction is the X axis direction and the second axis direction is the Y axis direction as an example for explanation. However, in other embodiments according to the present invention, the first axis direction can be selected as the Y axis direction and the second axis direction can be selected as the X axis direction as needed.

本實施例六的該等電子元件1211~12NM為例如但不限於選自一個以上由發光二極體、雷射二極體及半導體元件所構成之群組。其中,該等發光二極體為例如但不限於所發出的光為紅光、綠光、藍光、黃光、白光、紅外光或紫外光;該等雷射二極體的波長為例如但不限於介於390奈米至1700奈米;該 等半導體元件為為例如但不限於選自一個以上由處理器、記憶體IC、微元件IC、邏輯IC及類比IC所構成的群組。 The electronic components 1211~12NM of the sixth embodiment are, for example, but not limited to, selected from one or more groups consisting of light-emitting diodes, laser diodes, and semiconductor components. The light-emitting diodes are, for example, but not limited to, emitting red light, green light, blue light, yellow light, white light, infrared light, or ultraviolet light; the wavelength of the laser diodes is, for example, but not limited to, between 390 nanometers and 1700 nanometers; the semiconductor components are, for example, but not limited to, selected from one or more groups consisting of processors, memory ICs, micro-component ICs, logic ICs, and analog ICs.

其次,請參照圖4B’~4C’。如圖4B’~4C’所示,提供一第二基板200,並將該第二基板200設置於該第一基板100下方,該第二基板200具有相對的第二上表面200A與第二下表面200B,且該第一基板100的該第一上表面100A面向該第二基板200的該第二上表面200A,其中,該第二基板200為一熱解膠膜或一光解膠膜。 Next, please refer to Figures 4B'~4C'. As shown in Figures 4B'~4C', a second substrate 200 is provided and disposed below the first substrate 100. The second substrate 200 has a second upper surface 200A and a second lower surface 200B opposite to each other, and the first upper surface 100A of the first substrate 100 faces the second upper surface 200A of the second substrate 200, wherein the second substrate 200 is a pyrolytic adhesive film or a photolytic adhesive film.

其次,將位在該第一基板100的第S1行的該等電子元件作為該第一基板100沿該第二軸(Y軸)方向的一第一基準線110’,將位在該第二基板200的第S2行的該等電子元件作為該第二基板200沿該第二軸(Y軸)方向的一第二基準線210’,並使該第一基準線110’對準該第二基準線210’。然後,提供一具第一波長的第一光於該第一基板100上方,該具第一波長的第一光為一波長例如但不限於介於100奈米至12000奈米的光,使該具第一波長的第一光照射位在該第一電子元件陣列的第M1行的該電子元件12K(M1)或該等電子元件121(M1)~12N(M1)所在的該第一基板100,使其被熱解或光解而失去黏性且將位在該第一基板100的第M1行的該電子元件12K(M1)或該等電子元件121(M1)~12N(M1)被選擇性剝離,並接合至該第二基板200的該第二上表面200A,使其成為位在該第二基板200的第二電子元件陣列的第M2列的該電子元件22k(M2)或該等電子元件221(M2)~22Q(M2),其中S1、S2、M1、M2為自然數,M1

Figure 112119959-A0305-02-0042-85
M,M2
Figure 112119959-A0305-02-0042-86
P,且1
Figure 112119959-A0305-02-0042-87
S1
Figure 112119959-A0305-02-0042-88
M1,1
Figure 112119959-A0305-02-0042-89
S2
Figure 112119959-A0305-02-0042-90
M2。如圖4C’所示,當位在該第一基板100的該等電子元件1211~12NM全部或部分被轉移至該第二基板200後,便可在該第二基板200的該第二上表面200形成一個由P行電子元件乘以Q列 電子元件排列所形成的第二電子元件陣列(未標示),其中P、Q為大於1的自然數,P≠M及/或Q≠N,且其中該第二電子元件陣列之行距為X2,X2>0且X1≠X2。 Secondly, the electronic components located in the S1th row of the first substrate 100 are used as a first baseline 110' of the first substrate 100 along the second axis (Y axis), and the electronic components located in the S2th row of the second substrate 200 are used as a second baseline 210' of the second substrate 200 along the second axis (Y axis), and the first baseline 110' is aligned with the second baseline 210'. Then, a first light with a first wavelength is provided above the first substrate 100. The first light with a first wavelength is a light with a wavelength, for example but not limited to, between 100 nanometers and 12000 nanometers. The first light with the first wavelength irradiates the first substrate 100 where the electronic component 12K (M1) or the electronic components 121 (M1) to 12N (M1) located in the M1th row of the first electronic component array are located, so that the electronic components 12K (M1) or the electronic components 121 (M1) to 12N (M1) are pyrolyzed or photolyzed to lose viscosity and the electronic components 12K (M1) to 12N (M1) located in the M1th row of the first electronic component array ...K (M1) are pyrolyzed or photolyzed to lose viscosity and the electronic components 12K (M1) to 12K (M1) are pyrolyzed or photolyzed to lose viscosity and the electronic components 12K (M1) to 12K (M1) are pyrolyzed or photolyzed to lose viscosity and the electronic components 12K (M1) to 12K (M1) are pyrolyzed or photoly The electronic component 12K (M1) or the electronic components 121 (M1) to 12N (M1) of the M1th row of a substrate 100 is selectively peeled off and bonded to the second upper surface 200A of the second substrate 200, so that it becomes the electronic component 22k (M2) or the electronic components 221 (M2) to 22Q (M2) of the M2th row of the second electronic component array of the second substrate 200, wherein S1, S2, M1, and M2 are natural numbers, and M1 is
Figure 112119959-A0305-02-0042-85
M, M2
Figure 112119959-A0305-02-0042-86
P, and 1
Figure 112119959-A0305-02-0042-87
S1
Figure 112119959-A0305-02-0042-88
M1,1
Figure 112119959-A0305-02-0042-89
S2
Figure 112119959-A0305-02-0042-90
As shown in FIG. 4C′, when all or part of the electronic components 1211-12NM on the first substrate 100 are transferred to the second substrate 200, a second electronic component array (not shown) formed by P rows of electronic components multiplied by Q columns of electronic components can be formed on the second upper surface 200 of the second substrate 200, wherein P and Q are natural numbers greater than 1, P≠M and/or Q≠N, and wherein the row spacing of the second electronic component array is X2, X2>0 and X1≠X2.

其中,位在該第一基板100的第M1行的該電子元件12K(M1)或該等電子元件121(M1)~12N(M1)與第一基板100的第一基準線110’的間距△X1=(M1-S1)*X1;位在該第二基板200的第M2行的該電子元件22k(M2)或該等電子元件221(M2)~22Q(M2)與第二基板200的第二基準線210’的間距△X2=(M2-S2)*X2。因此,當位在該第一基板100的該第一電子元件陣列的第M1行的該電子元件12K(M1)或該等電子元件121(M1)~12N(M1)被轉移至該第二基板200並成為成為位在該第二基板200的第二電子元件陣列的第M2列的該電子元件22k(M2)或該等電子元件221(M2)~22Q(M2)時,其沿該第一軸(X軸)方向的相對移動距離△X為△X2-△X1,即△X2=[(M2-S2)*X2-(M1-S1)*X1]。 Among them, the distance between the electronic component 12K (M1) or the electronic components 121 (M1) ~ 12N (M1) located in the M1th row of the first substrate 100 and the first baseline 110' of the first substrate 100 is △X1 = (M1-S1) * X1; the distance between the electronic component 22k (M2) or the electronic components 221 (M2) ~ 22Q (M2) located in the M2th row of the second substrate 200 and the second baseline 210' of the second substrate 200 is △X2 = (M2-S2) * X2. Therefore, when the electronic component 12K (M1) or the electronic components 121 (M1) to 12N (M1) located in the M1th row of the first electronic component array of the first substrate 100 is transferred to the second substrate 200 and becomes the electronic component 22k (M2) or the electronic components 221 (M2) to 22Q (M2) located in the M2th row of the second electronic component array of the second substrate 200, the relative movement distance △X along the first axis (X axis) direction is △X2-△X1, that is, △X2=[(M2-S2)*X2-(M1-S1)*X1].

如圖4B’所示,當S1=1、S2=2時,即將位在該第一基板100的第1行的該等電子元件1211~12N1作為該第一基板100沿該第二軸(Y軸)方向的一第一基準線110’,將位在該第二基板200的第2行的該等電子元件2212~22V2作為該第二基板200沿該第二軸(Y軸)方向的一第二基準線210’,並使該第一基準線110對準該第二基準線210。然後,提供一具第一波長的第一光於該第一基板100上方,該具第一波長的第一光為一波長例如但不限於介於100奈米至12000奈米的光,使該具第一波長的第一光照射位在該第一電子元件陣列的第M1行的該電子元件12K(M1)或該等電子元件121(M1)~12N(M1)所在的該第一基板100,使其被熱解或光解而失去黏性且將位在該第一基板100的第M1行的該電子元件12K(M1)或該等電子元件121(M1)~12N(M1)被選擇性剝離,並接合 至該第二基板200的該第二上表面200A,使其成為位在該第二基板200的第二電子元件陣列的第M2列的該電子元件22k(M2)或該等電子元件221(M2)~22Q(M2),其中M1、M2為自然數,M1

Figure 112119959-A0305-02-0044-91
M,M2
Figure 112119959-A0305-02-0044-92
P。 As shown in FIG. 4B', when S1=1 and S2=2, the electronic components 1211~12N1 located in the first row of the first substrate 100 are used as a first baseline 110' of the first substrate 100 along the second axis (Y axis), and the electronic components 2212~22V2 located in the second row of the second substrate 200 are used as a second baseline 210' of the second substrate 200 along the second axis (Y axis), and the first baseline 110 is aligned with the second baseline 210. Then, a first light with a first wavelength is provided above the first substrate 100. The first light with a first wavelength is a light with a wavelength, for example but not limited to, between 100 nanometers and 12000 nanometers. The first light with the first wavelength irradiates the first substrate 100 where the electronic component 12K (M1) or the electronic components 121 (M1) to 12N (M1) located in the M1th row of the first electronic component array are located, so that the electronic components are thermally decomposed or photodecomposed to lose viscosity and the first substrate 100 is decomposed. The electronic component 12K (M1) or the electronic components 121 (M1) to 12N (M1) in the M1th row of the first substrate 100 are selectively peeled off and bonded to the second upper surface 200A of the second substrate 200, so that they become the electronic component 22k (M2) or the electronic components 221 (M2) to 22Q (M2) in the M2th row of the second electronic component array of the second substrate 200, where M1 and M2 are natural numbers, and M1 is
Figure 112119959-A0305-02-0044-91
M, M2
Figure 112119959-A0305-02-0044-92
P.

如圖4C’所示,當位在該第一基板100的該等電子元件1211~12NM全部或部分被轉移至該第二基板200後,便可在該第二基板200的該第二上表面200形成一個由P行電子元件乘以Q列電子元件排列所形成的第二電子元件陣列(未標示),其中P、Q為大於1的自然數,P≠M及/或Q≠N,且其中該第二電子元件陣列之行距為X2,X2>0且X1≠X2。 As shown in FIG. 4C', when all or part of the electronic components 1211-12NM located on the first substrate 100 are transferred to the second substrate 200, a second electronic component array (not shown) formed by P rows of electronic components multiplied by Q columns of electronic components can be formed on the second upper surface 200 of the second substrate 200, where P and Q are natural numbers greater than 1, P≠M and/or Q≠N, and the row spacing of the second electronic component array is X2, X2>0 and X1≠X2.

其中,位在該第一基板100的第M1行的該電子元件12K(M1)或該等電子元件121(M1)~12N(M1)與第一基板100的第一基準線110’的間距△X1=(M1-1)*X1;位在該第二基板200的第M2行的該電子元件22k(M2)或該等電子元件221(M2)~22Q(M2)與第二基板200的第二基準線210’的間距△X2=(M2-2)*X2。因此,當位在該第一基板100的該第一電子元件陣列的第M1行的該電子元件12K(M1)或該等電子元件121(M1)~12N(M1)被轉移至該第二基板200並成為成為位在該第二基板200的第二電子元件陣列的第M2列的該電子元件22k(M2)或該等電子元件221(M2)~22Q(M2)時,其沿該第一軸(X軸)方向的相對移動距離△X等於△X2-△X1,即△X=[(M2-2)*X2-(M1-1)*X1]。 Among them, the distance between the electronic component 12K (M1) or the electronic components 121 (M1) ~ 12N (M1) located in the M1th row of the first substrate 100 and the first baseline 110' of the first substrate 100 is △X1 = (M1-1) * X1; the distance between the electronic component 22k (M2) or the electronic components 221 (M2) ~ 22Q (M2) located in the M2th row of the second substrate 200 and the second baseline 210' of the second substrate 200 is △X2 = (M2-2) * X2. Therefore, when the electronic component 12K (M1) or the electronic components 121 (M1) to 12N (M1) located in the M1th row of the first electronic component array of the first substrate 100 is transferred to the second substrate 200 and becomes the electronic component 22k (M2) or the electronic components 221 (M2) to 22Q (M2) located in the M2th row of the second electronic component array of the second substrate 200, the relative movement distance △X along the first axis (X axis) direction is equal to △X2-△X1, that is, △X=[(M2-2)*X2-(M1-1)*X1].

本實施例六更可進一步將位在該第二基板200的該第二陣列轉移至一第三基板300,並在該第三基板300形成一個由U行電子元件乘以V列電子元件排列所形成的第三電子元件陣列(未標示),且該第三電子元件陣列之行距與列距分別為X2、Y2,其中U、V為大於1的自然數,X2、Y2>0,且X1≠X2,Y1≠Y2。 The sixth embodiment can further transfer the second array located on the second substrate 200 to a third substrate 300, and form a third electronic component array (not shown) formed by U rows of electronic components multiplied by V columns of electronic components on the third substrate 300, and the row spacing and column spacing of the third electronic component array are X2 and Y2 respectively, where U and V are natural numbers greater than 1, X2 and Y2>0, and X1≠X2, Y1≠Y2.

如圖4D’~4E’所示,本實施例五更可提供一第三基板300,並將該第三基板300設置於該第二基板200下方,該第三基板300具有相對的第三上表面300A與第三下表面300B,且該第二基板200的該第二上表面200A面向該第三基板300的該第三上表面300A將位在該第二基板200的該第二電子元件陣列轉移至該第三基板300,並在該第三基板300的該第三上表面300A形成一個由U行電子元件乘以V列電子元件排列所形成的第三電子元件陣列(未標示),且該第三電子元件陣列之行距與列距分別為X2、Y2,其中U、V為大於1的自然數。 As shown in Figures 4D' to 4E', the fifth embodiment may further provide a third substrate 300, and the third substrate 300 is disposed below the second substrate 200. The third substrate 300 has a third upper surface 300A and a third lower surface 300B opposite to each other, and the second upper surface 200A of the second substrate 200 faces the third upper surface 300A of the third substrate 300, and the second electronic component array located on the second substrate 200 is transferred to the third substrate 300, and a third electronic component array (not shown) formed by U rows of electronic components multiplied by V columns of electronic components is formed on the third upper surface 300A of the third substrate 300, and the row spacing and column spacing of the third electronic component array are X2 and Y2 respectively, where U and V are natural numbers greater than 1.

如圖4D’~4E’所示,將位在該第二基板的第R1列行的該等電子元件作為該第二基板200沿該第一軸(X軸)方向的一第三基準線250’,將位在該第三基板300的第R2列的該等電子元件作為該第三基板300沿該第一軸(X軸)方向的一第四基準線350’,並使該第三基準線250’對準該第四基準線350’。然後,提供一具第二波長的第二光於該第二基板200上方,該具第二波長的第二光為一波長例如但不限於介於100奈米至12000奈米的光,使該具第二波長的第二光照射位在該第二電子元件陣列的第M1行的該電子元件22(N1)J或該等電子元件22(N1)1~22(N1)P所在的該第二基板200,使其被熱解或光解而失去黏性且將位在該第二基板的第N1行的該電子元件22(N1)J或該等電子元件22(N1)1~22(N1)P被選擇性剝離,並接合至該第三基板300的該第三上表面300A,使其位在第三基板300的第三電子元件陣列的第N2列的該電子元件32(N2)j或該等電子元件32(N2)1~32(N2)U,其中R1、R2、N1、N2為自然數,N1

Figure 112119959-A0305-02-0045-93
P,N2
Figure 112119959-A0305-02-0045-94
U,且1
Figure 112119959-A0305-02-0045-95
R1
Figure 112119959-A0305-02-0045-96
N1,1
Figure 112119959-A0305-02-0045-97
R2
Figure 112119959-A0305-02-0045-98
N2。 As shown in FIGS. 4D′ to 4E′, the electronic components located in the R1th row of the second substrate are used as a third reference line 250′ of the second substrate 200 along the first axis (X axis), and the electronic components located in the R2th row of the third substrate 300 are used as a fourth reference line 350′ of the third substrate 300 along the first axis (X axis), and the third reference line 250′ is aligned with the fourth reference line 350′. Then, a second light with a second wavelength is provided above the second substrate 200. The second light with a second wavelength is a light with a wavelength, for example but not limited to, between 100 nanometers and 12,000 nanometers. The second light with a second wavelength irradiates the second substrate 200 where the electronic element 22 (N1) J or the electronic elements 22 (N1) 1 to 22 (N1) P located in the M1th row of the second electronic element array are located, so that the electronic element 22 (N1) J or the electronic elements 22 (N1) 1 to 22 (N1) P are thermally decomposed or photo-decomposed to lose viscosity and the second substrate 200 is decomposed. The electronic component 22(N1)J or the electronic components 22(N1)1-22(N1)P in the N1th row of the second substrate are selectively peeled off and bonded to the third upper surface 300A of the third substrate 300, so that the electronic component 32(N2)j or the electronic components 32(N2)1-32(N2)U in the N2th row of the third electronic component array of the third substrate 300 are located, wherein R1, R2, N1, and N2 are natural numbers, and N1 is
Figure 112119959-A0305-02-0045-93
P, N2
Figure 112119959-A0305-02-0045-94
U, and 1
Figure 112119959-A0305-02-0045-95
R1
Figure 112119959-A0305-02-0045-96
N1,1
Figure 112119959-A0305-02-0045-97
R2
Figure 112119959-A0305-02-0045-98
N2.

其中,位在該第二基板200的第N1行的該電子元件22(N1)J或該等電子元件22(N1)1~22(N1)P與該第三基準線250’的間距△Y1為(N1-R1)*Y1;位在該第三基板300的第N2行的該電子元件32(N2)j或該等電子元件32(N2)1~32(N2)U與該第四基準線350’的間距△Y2為(N2-R2)*Y2。因此,當位在該第二基板的該第二電子元件陣列的第N1行的該電子元件22(N1)J或該等電子元件22(N1)1~22(N1)P被轉移至位在該第三基板300的該第三電子元件陣列的第N2行的該電子元件32(N2)j或該等電子元件32(N2)1~32(N2)U時,其沿該第二軸(Y軸)方向的相對移動距離△Y等於△Y2-△Y1,即△Y=[(N2-R2)*Y2-(N1-R1)*Y1]。 Among them, the distance △Y1 between the electronic component 22(N1)J or the electronic components 22(N1)1~22(N1)P located in the N1th row of the second substrate 200 and the third baseline 250' is (N1-R1)*Y1; the distance △Y2 between the electronic component 32(N2)j or the electronic components 32(N2)1~32(N2)U located in the N2th row of the third substrate 300 and the fourth baseline 350' is (N2-R2)*Y2. Therefore, when the electronic component 22(N1)J or the electronic components 22(N1)1~22(N1)P located in the N1th row of the second electronic component array of the second substrate is transferred to the electronic component 32(N2)j or the electronic components 32(N2)1~32(N2)U located in the N2th row of the third electronic component array of the third substrate 300, the relative movement distance △Y along the second axis (Y axis) direction is equal to △Y2-△Y1, that is, △Y=[(N2-R2)*Y2-(N1-R1)*Y1].

如圖4D’所示,當R1=1、R2=2時,即將位在該第二基板的第1列的該等電子元件2211~221P作為該第二基板200沿該第一軸(X軸)方向的一第三基準線250’,將位在該第三基板300的第2行的該等電子元件3221~322U作為該第三基板300沿該第一軸(X軸)方向的一第四基準線350’,並使該第三基準線250’對準該第四基準線350’。然後,提供一具第二波長的第二光於該第二基板200上方,該具第二波長的第二光為一波長例如但不限於介於100奈米至12000奈米的光,使該具第二波長的第二光照射位在該第二電子元件陣列的第M1行的該電子元件22(N1)J或該等電子元件22(N1)1~22(N1)P所在的該第二基板200,使其被熱解或光解而失去黏性且將位在該第二基板的第N1行的該電子元件22(N1)J或該等電子元件22(N1)1~22(N1)P被選擇性剝離,並接合至該第三基板300的該第三上表面300A,使其位在第三基板300的第三電子元件陣列的第N2列的該電子元件32(N2)j或該等電子元件32(N2)1~32(N2)U,其中R1、R2、N1、N2為自然數,N1

Figure 112119959-A0305-02-0046-157
P,N2
Figure 112119959-A0305-02-0046-158
U。 As shown in FIG. 4D', when R1=1 and R2=2, the electronic components 2211~221P located in the first row of the second substrate are used as a third baseline 250' of the second substrate 200 along the first axis (X axis), and the electronic components 3221~322U located in the second row of the third substrate 300 are used as a fourth baseline 350' of the third substrate 300 along the first axis (X axis), and the third baseline 250' is aligned with the fourth baseline 350'. Then, a second light with a second wavelength is provided above the second substrate 200. The second light with a second wavelength is a light with a wavelength, for example but not limited to, between 100 nanometers and 12,000 nanometers. The second light with a second wavelength irradiates the second substrate 200 where the electronic element 22 (N1) J or the electronic elements 22 (N1) 1 to 22 (N1) P located in the M1th row of the second electronic element array are located, so that the electronic element 22 (N1) J or the electronic elements 22 (N1) 1 to 22 (N1) P are thermally decomposed or photo-decomposed to lose viscosity and the second substrate 200 is decomposed. The electronic component 22(N1)J or the electronic components 22(N1)1-22(N1)P in the N1th row of the second substrate are selectively peeled off and bonded to the third upper surface 300A of the third substrate 300, so that the electronic component 32(N2)j or the electronic components 32(N2)1-32(N2)U in the N2th row of the third electronic component array of the third substrate 300 are located, wherein R1, R2, N1, and N2 are natural numbers, and N1 is
Figure 112119959-A0305-02-0046-157
P, N2
Figure 112119959-A0305-02-0046-158
U.

其中,位在該第二基板200的第N1行的該電子元件22(N1)J或該等電子元件22(N1)1~22(N1)P與該第三基準線250’的間距△Y1為(N1-1)*Y1;位在該第三基板300的第N2行的該電子元件32(N2)j或該等電子元件32(N2)1~32(N2)U與該第四基準線350’的間距△Y2為(N2-2)*Y2。因此,當位在該第二基板200的該第二電子元件陣列的第N1行的該電子元件22(N1)J或該等電子元件22(N1)1~22(N1)P被轉移至位在該第三基板300的該第三電子元件陣列的第N2行的該電子元件32(N2)j或該等電子元件32(N2)1~32(N2)U時,其沿該第二軸(Y軸)方向的相對移動距離△Y等於△Y2-△Y1,即△Y=[(N2-2)*Y2-(N1-1)*Y1]。 Among them, the distance △Y1 between the electronic component 22(N1)J or the electronic components 22(N1)1~22(N1)P located in the N1th row of the second substrate 200 and the third baseline 250' is (N1-1)*Y1; the distance △Y2 between the electronic component 32(N2)j or the electronic components 32(N2)1~32(N2)U located in the N2th row of the third substrate 300 and the fourth baseline 350' is (N2-2)*Y2. Therefore, when the electronic component 22(N1)J or the electronic components 22(N1)1~22(N1)P located in the N1th row of the second electronic component array of the second substrate 200 is transferred to the electronic component 32(N2)j or the electronic components 32(N2)1~32(N2)U located in the N2th row of the third electronic component array of the third substrate 300, the relative movement distance △Y along the second axis (Y axis) direction is equal to △Y2-△Y1, that is, △Y=[(N2-2)*Y2-(N1-1)*Y1].

如圖4E’所示,當位在該第二基板200的該等電子元件2211~12QP被選擇性剝離並接合於該第三基板300的該第三上表面300A後,便可在該第三基板300形成一第三電子元件陣列(未標示),且該第三電子元件陣列(未標示)之行距與列距分別為X2、Y2。 As shown in FIG. 4E', when the electronic components 2211-12QP located on the second substrate 200 are selectively peeled off and bonded to the third upper surface 300A of the third substrate 300, a third electronic component array (not shown) can be formed on the third substrate 300, and the row and column spacings of the third electronic component array (not shown) are X2 and Y2 respectively.

雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何熟習此技藝者,在不脫離本發明之精神和範圍內,當可做各種之更動與潤飾,因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。 Although the present invention has been disclosed as above by way of embodiments, it is not intended to limit the present invention. Anyone skilled in the art can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the present invention shall be subject to the scope of the patent application attached hereto.

100:第一基板 100: First substrate

100A:第一上表面 100A: First upper surface

100B:第一下表面 100B: first lower surface

1211~121J、121M、1221~122J、122M、12K1~12KJ、12KM、12N1~12NJ、12NM:電子元件 1211~121J, 121M, 1221~122J, 122M, 12K1~12KJ, 12KM, 12N1~12NJ, 12NM: electronic components

200:第二基板 200: Second substrate

200A:第二上表面 200A: Second upper surface

200B:第二下表面 200B: Second lower surface

Claims (39)

一種可調整間距的巨量轉移電子元件的方法,其步驟包括:提供一第一基板,該第一基板具有相對的第一上表面與第一下表面,其中該第一基板的該第一上表面具有複數個電子元件,且該等電子元件分別沿第一軸方向與第二軸方向排列,形成一個由M行電子元件乘以N列電子元件排列所形成的第一電子元件陣列,其中,該第一軸方向與該第二軸方向實質互相垂直,M、N為大於1的自然數,且該第一電子元件陣列之行距、列距分別為X1、Y1,且X1、Y1>0;提供一第二基板,並將該第二基板設置於該第一基板下方,該第二基板具有相對的第二上表面與第二下表面,且該第一基板的該第一上表面面向該第二基板的該第二上表面;以及提供一具第一波長的第一光於該第一基板上方,且藉由該第一基板與該第二基板先、後沿該第一軸方向與該第二軸方向的相對移動(X2-X1)、(Y2-Y1),使該第一電子元件陣列中的該等電子元件所在的該第一基板被該第一光沿該第一軸方向依序且不間隔地逐個照射而被熱解或光解而失去黏性,或先、後沿該第二軸方向與該第一軸方向的相對移動(Y2-Y1)、(X2-X1),使該第一電子元件陣列中的該等電子元件所在的該第一基板被該第一光沿該沿該第二軸方向依序且不間隔地逐個照射而被熱解或光解而失去黏性,且將位在該第一基板的該等電子元件全部或部分剝離並接合至該第二基板後,在該第二基板的該第二上表面形成一第二電子元件陣列,且該第二電子元件陣列之行距、列距分別為X2、Y2,X2、Y2>0,且X1≠X2,Y1≠Y2。 A method for mass transfer of electronic components with adjustable spacing includes the following steps: providing a first substrate, the first substrate having a first upper surface and a first lower surface opposite to each other, wherein the first upper surface of the first substrate has a plurality of electronic components, and the electronic components are arranged along a first axis direction and a second axis direction, respectively, to form a first electronic component array formed by arranging M rows of electronic components by N columns of electronic components, wherein the first axis direction and the second axis direction are substantially mutually opposite. The invention relates to a method for manufacturing a first electronic element array having a first upper surface and a second lower surface, wherein the first upper surface of the first substrate faces the second upper surface of the second substrate; and a first light having a first wavelength is provided above the first substrate, and the first light is transmitted through the first substrate. The first substrate and the second substrate are moved relative to each other along the first axis and the second axis, respectively (X2-X1), (Y2-Y1), so that the first substrate where the electronic components in the first electronic component array are located is irradiated by the first light one by one in sequence and without interval along the first axis and is thermally decomposed or photolyzed to lose viscosity, or the first substrate and the second substrate are moved relative to each other along the second axis and the first axis, respectively (Y2-Y1), (X2-X1), so that the electronic components in the first electronic component array are The first substrate where the electronic components are located is irradiated by the first light sequentially and without interval along the second axis direction to be thermally decomposed or photolyzed to lose viscosity, and the electronic components located on the first substrate are completely or partially peeled off and bonded to the second substrate, and a second electronic component array is formed on the second upper surface of the second substrate, and the row spacing and column spacing of the second electronic component array are X2 and Y2 respectively, X2 and Y2>0, and X1≠X2, Y1≠Y2. 如請求項1所述的可調整間距的巨量轉移電子元件的方法,其中該第二電子元件陣列的形成步驟,包括:使該具第一波長的第一光照射該第一電子元件陣列的第J行、第K列的該電子元件所在的該第一基板,使其被熱解或光解而失去黏性,並使第J行、第K列的該電子元件選擇性地被剝離並接合於該第二基板的該第二上表面,然後使該第一基板相對於該第二基板沿該第一軸方向位移(X2-X1)的距離,使該具第一波長的第一光照射該第一電子元件陣列的第(J+1)行、第K列的該電子元件所在的該第一基板,使其被熱解或光解而失去黏性,並使第(J+1)行、第K列的該電子元件選擇性地被剝離並接合於該第二基板的該第二上表面,其中J、K、X2均為自然數,且1
Figure 112119959-A0305-02-0051-159
J
Figure 112119959-A0305-02-0051-160
(M-1),1
Figure 112119959-A0305-02-0051-101
K
Figure 112119959-A0305-02-0051-161
(N-1);以及當該第一電子元件陣列的第K列的該等電子元件全部或部分被選擇性地剝離並接合於該第二基板的該第二上表面後,先使該第一基板重新對準該第二基板,再使該第一基板相對於該第二基板沿該第二軸方向位移(Y2-Y1)的距離,然後使該具第一波長的第一光照射該第一電子元件陣列的第J行、第(K+1)列的該電子元件所在的該第一基板,使其被熱解或光解而失去黏性,並使第J行、第(K+1)列的該電子元件選擇性地被剝離並接合於該第二基板的該第二上表面,然後再使該第一基板相對於該第二基板沿該第一軸方向位移(X2-X1)的距離,並使該具第一波長的第一光照射該第一電子元件陣列的第(J+1)行、第(K+1)列的該電子元件所在的該第一基板,使其被熱解或光解而失去黏性,並使第(J+1)行、第(K+1)列的該電子元件選擇性地被剝離並接合於該第二基板的該第二上表面,其中Y2為自然數; 其中,當位在該第一基板的該等電子元件全部或部分被選擇性剝離並接合於該第二基板的該第二上表面後,便可在該第二基板的該第二上表面形成該第二電子元件陣列。
The method for mass transfer of electronic components with adjustable spacing as described in claim 1, wherein the step of forming the second electronic component array comprises: irradiating the first substrate where the electronic components in the Jth row and the Kth column of the first electronic component array are located with the first light having a first wavelength, causing the first substrate to be thermally decomposed or photolyzed to lose viscosity, and causing the electronic components in the Jth row and the Kth column to be selectively peeled off and bonded to the second upper surface of the second substrate, and then causing the first substrate to The plate is displaced by a distance (X2-X1) relative to the second substrate along the first axis direction, so that the first light with the first wavelength irradiates the first substrate where the electronic components in the (J+1)th row and the Kth column of the first electronic component array are located, so that the electronic components are thermally decomposed or photolyzed to lose viscosity, and the electronic components in the (J+1)th row and the Kth column are selectively peeled off and bonded to the second upper surface of the second substrate, wherein J, K, and X2 are all natural numbers, and 1
Figure 112119959-A0305-02-0051-159
J
Figure 112119959-A0305-02-0051-160
(M-1), 1
Figure 112119959-A0305-02-0051-101
K
Figure 112119959-A0305-02-0051-161
(N-1); and after all or part of the electronic components in the Kth row of the first electronic component array are selectively peeled off and bonded to the second upper surface of the second substrate, the first substrate is firstly realigned with the second substrate, and then the first substrate is displaced by a distance (Y2-Y1) relative to the second substrate along the second axis direction, and then the first light with a first wavelength is irradiated on the first substrate where the electronic components in the Jth row and the (K+1)th row of the first electronic component array are located, so that the electronic components are thermally decomposed or photodecomposed to lose their viscosity, and the electronic components in the Jth row and the (K+1)th row of the first electronic component array ... The electronic components are selectively peeled off and bonded to the second upper surface of the second substrate, and then the first substrate is displaced by a distance (X2-X1) relative to the second substrate along the first axis direction, and the first light with a first wavelength is irradiated on the first substrate where the electronic components in the (J+1)th row and (K+1)th column of the first electronic component array are located, so that they are thermally decomposed or photolyzed to lose viscosity, and the electronic components in the (J+1)th row and (K+1)th column are selectively peeled off and bonded to the second upper surface of the second substrate, where Y2 is a natural number; wherein, when all or part of the electronic components located on the first substrate are selectively peeled off and bonded to the second upper surface of the second substrate, the second electronic component array can be formed on the second upper surface of the second substrate.
如請求項1所述的可調整間距的巨量轉移電子元件的方法,其中該第二電子元件陣列的形成步驟,包括:使該具第一波長的第一光照射該第一電子元件陣列的第J行、第K列的該電子元件所在的該第一基板,使其被熱解或光解而失去黏性,並使第J行、第K列的該電子元件選擇性地被剝離並接合於該第二基板的該第二上表面,然後使該第一基板相對於該第二基板沿該第二軸方向位移(Y2-Y1)的距離,使該具第一波長的第一光照射該第一電子元件陣列的第J行、第(K+1)列的該電子元件所在的該第一基板,使其被熱解或光解而失去黏性,並使第J行、第(K+1)列的該電子元件選擇性地被剝離並接合於該第二基板的該第二上表面,其中J、K、Y2均為自然數,且1
Figure 112119959-A0305-02-0052-162
J
Figure 112119959-A0305-02-0052-163
(M-1),1
Figure 112119959-A0305-02-0052-105
K
Figure 112119959-A0305-02-0052-164
(N-1);以及當該第一電子元件陣列的第J行的該等電子元件全部或部分被選擇性地剝離並接合於該第二基板的該第二上表面後,先使該第一基板重新對準該第二基板,再使該第一基板相對於該第二基板沿該第一軸方向位移(X2-X1)的距離,然後使該具第一波長的第一光照射該第一電子元件陣列的第(J+1)行、第K列的該電子元件所在的該第一基板,使其被熱解或光解而失去黏性,並使第(J+1)行、第K列的該電子元件選擇性地被剝離並接合於該第二基板的該第二上表面,然後再使該第一基板相對於該第二基板沿該第二軸方向位移(Y2-Y1)的距離,並使該具第一波長的第一光照射該第一電子元件陣列的第(J+1)行、第(K+1)列的該電子元件所在的該第一基板,使其被熱解或 光解而失去黏性,並使第(J+1)行、第(K+1)列的該電子元件選擇性地被剝離並接合於該第二基板的該第二上表面,其中X2為自然數;其中,當位在該第一基板的該等電子元件全部或部分被選擇性剝離並接合於該第二基板的該第二上表面後,便可在該第二基板的該第二上表面形成該第二電子元件陣列。
The method for mass transfer of electronic components with adjustable spacing as described in claim 1, wherein the step of forming the second electronic component array comprises: irradiating the first substrate where the electronic components in the Jth row and the Kth column of the first electronic component array are located with the first light having a first wavelength, causing the first substrate to be thermally decomposed or photolyzed to lose viscosity, and causing the electronic components in the Jth row and the Kth column to be selectively peeled off and bonded to the second upper surface of the second substrate, and then causing the first substrate to The plate is displaced by a distance (Y2-Y1) relative to the second substrate along the second axis direction, so that the first light with the first wavelength irradiates the first substrate where the electronic components in the Jth row and the (K+1)th column of the first electronic component array are located, so that the electronic components are thermally decomposed or photolyzed to lose viscosity, and the electronic components in the Jth row and the (K+1)th column are selectively peeled off and bonded to the second upper surface of the second substrate, wherein J, K, and Y2 are all natural numbers, and 1
Figure 112119959-A0305-02-0052-162
J
Figure 112119959-A0305-02-0052-163
(M-1), 1
Figure 112119959-A0305-02-0052-105
K
Figure 112119959-A0305-02-0052-164
(N-1); and after all or part of the electronic components in the Jth row of the first electronic component array are selectively peeled off and bonded to the second upper surface of the second substrate, the first substrate is first realigned with the second substrate, and then the first substrate is displaced by a distance (X2-X1) relative to the second substrate along the first axis direction, and then the first light with a first wavelength is irradiated on the first substrate where the electronic components in the (J+1)th row and the Kth column of the first electronic component array are located, so that the electronic components are thermally decomposed or photolyzed to lose viscosity, and the electronic components in the (J+1)th row and the Kth column are selectively peeled off and bonded to the second upper surface of the second substrate, and then the first substrate is The plate is displaced by a distance (Y2-Y1) relative to the second substrate along the second axis direction, and the first light with a first wavelength irradiates the first substrate where the electronic components in the (J+1)th row and (K+1)th column of the first electronic component array are located, so that the electronic components are thermally decomposed or photolyzed to lose viscosity, and the electronic components in the (J+1)th row and (K+1)th column are selectively peeled off and bonded to the second upper surface of the second substrate, wherein X2 is a natural number; wherein, when all or part of the electronic components located on the first substrate are selectively peeled off and bonded to the second upper surface of the second substrate, the second electronic component array can be formed on the second upper surface of the second substrate.
如請求項1所述的可調整間距的巨量轉移電子元件的方法,其中該第一基板為一熱解膠膜,且該具第一波長的第一光為一波長介於100奈米至12000奈米的光。 A method for mass transfer of electronic components with adjustable spacing as described in claim 1, wherein the first substrate is a pyrolytic adhesive film, and the first light with a first wavelength is a light with a wavelength between 100 nanometers and 12,000 nanometers. 如請求項1所述的可調整間距的巨量轉移電子元件的方法,其中該第一基板為一光解膠膜,且該具第一波長的第一光為一波長介於100奈米至12000奈米的光。 A method for mass transfer of electronic components with adjustable spacing as described in claim 1, wherein the first substrate is a photoresist film, and the first light with a first wavelength is a light with a wavelength between 100 nanometers and 12,000 nanometers. 如請求項1所述的可調整間距的巨量轉移電子元件的方法,其中該等電子元件為選自一個以上由發光二極體、雷射二極體及半導體元件所構成之群組。 A method for mass transfer of electronic components with adjustable spacing as described in claim 1, wherein the electronic components are selected from one or more groups consisting of light-emitting diodes, laser diodes and semiconductor components. 如請求項6所述的可調整間距的巨量轉移電子元件的方法,其中該等發光二極體所發出的光為紅光、綠光、藍光、黃光、白光、紅外光或紫外光。 A method for mass transfer of electronic components with adjustable spacing as described in claim 6, wherein the light emitted by the light emitting diodes is red light, green light, blue light, yellow light, white light, infrared light or ultraviolet light. 如請求項6所述的可調整間距的巨量轉移電子元件的方法,其中該等雷射二極體的波長介於390奈米至1700奈米。 A method for mass transfer of electronic components with adjustable spacing as described in claim 6, wherein the wavelength of the laser diodes is between 390 nanometers and 1700 nanometers. 如請求項6所述的可調整間距的巨量轉移電子元件的方法,其中該等半導體元件為選自一個以上由處理器、記憶體IC、微元件IC、邏輯IC及類比IC所構成的群組。 A method for mass transferring electronic components with adjustable spacing as described in claim 6, wherein the semiconductor components are selected from one or more groups consisting of processors, memory ICs, micro-component ICs, logic ICs, and analog ICs. 一種可調整間距的巨量轉移電子元件的方法,其步驟包括: 提供一第一基板,該第一基板具有相對的第一上表面與第一下表面,其中該第一基板的該第一上表面具有複數個電子元件,且該等電子元件分別沿第一軸方向與第二軸方向排列,形成一個由M行電子元件乘以N列電子元件排列所形成的第一電子元件陣列,其中,該第一軸方向與該第二軸方向實質互相垂直,M、N為大於1的自然數,且該第一電子元件陣列之行距、列距分別為X1、Y1,且X1、Y1>0;提供一第二基板,並將該第二基板設置於該第一基板下方,該第二基板具有相對的第二上表面與第二下表面,且該第一基板的該第一上表面面向該第二基板的該第二上表面;以及提供一具第一波長的第一光於該第一基板上方,且藉由該第一基板與該第二基板沿該第一軸方向相對移動(X2-X1),使該第一電子元件陣列中的該等電子元件所在的該第一基板被該第一光沿該第一軸方向依序且不間隔地逐行照射而被熱解或光解而失去黏性,或沿該第二軸方向相對移動(Y2-Y1),使該第一電子元件陣列中的該等電子元件所在的該第一基板被該第一光沿該第二軸方向依序且不間隔地逐列照射而被熱解或光解而失去黏性,且將位在該第一基板的該等電子元件全部或部分剝離並接合至至該第二基板,並在該第二基板形成一第二電子元件陣列,且該第二電子元件陣列之行距與列距分別為X1、Y2或X2、Y1,其中X2、Y2>0,且X1≠X2,Y1≠Y2。 A method for mass transfer of electronic components with adjustable spacing, the steps of which include: Providing a first substrate, the first substrate having a first upper surface and a first lower surface opposite to each other, wherein the first upper surface of the first substrate has a plurality of electronic components, and the electronic components are arranged along a first axis direction and a second axis direction respectively, forming a first electronic component array formed by M rows of electronic components multiplied by N columns of electronic components, wherein the first axis direction and the second axis direction are substantially perpendicular to each other, M and N are natural numbers greater than 1, and the row spacing and column spacing of the first electronic component array are X1 and Y1 respectively, and X1 and Y1>0; providing a second substrate, and arranging the second substrate below the first substrate, the second substrate having a second upper surface and a second lower surface opposite to each other, and the first upper surface of the first substrate faces the second upper surface of the second substrate; and providing a second substrate having a first wavelength A light is irradiated on the first substrate, and the first substrate and the second substrate move relative to each other along the first axis direction (X2-X1), so that the first substrate where the electronic components in the first electronic component array are located is irradiated by the first light in sequence and row by row without interval along the first axis direction to be thermally decomposed or photolyzed to lose viscosity, or the first substrate and the second substrate move relative to each other along the second axis direction (Y2-Y1), so that the first substrate where the electronic components in the first electronic component array are located is The first substrate is irradiated by the first light in sequence and without intervals along the second axis direction, and is thermally or photolytically decomposed to lose its viscosity, and the electronic components located on the first substrate are completely or partially peeled off and bonded to the second substrate, and a second electronic component array is formed on the second substrate, and the row spacing and column spacing of the second electronic component array are X1, Y2 or X2, Y1, respectively, wherein X2, Y2>0, and X1≠X2, Y1≠Y2. 如請求項10所述的可調整間距的巨量轉移電子元件的方法,其中該第二電子元件陣列之行距與列距分別為X1、Y2,且該第二電子元件陣列的形成步驟,包括: 使該具第一波長的第一光照射該第一電子元件陣列的第K列的該等電子元件所在的該第一基板,使其熱解或光解而失去黏性,並使第K列的該等電子元件全部被剝離並接合於該第二基板的該第二上表面;以及使該第一基板相對於該第二基板沿該第二軸方向位移(Y2-Y1)的距離,然後使該具第一波長的第一光照射該第一電子元件陣列的第(K+1)列的該等電子元件所在的該第一基板,使其被熱解或光解而失去黏性,並使第(K+1)列的該等電子元件全部或部分被剝離並接合於該第二基板的該第二上表面,K為自然數,且1
Figure 112119959-A0305-02-0055-107
K
Figure 112119959-A0305-02-0055-166
(N-1);其中,當位在該第一基板的該等電子元件全部或部分被選擇性剝離並接合於該第二基板的該第二上表面後,便可在該第二基板形成該第二電子元件陣列。
The method for mass transfer of electronic components with adjustable spacing as described in claim 10, wherein the row spacing and column spacing of the second electronic component array are X1 and Y2 respectively, and the steps of forming the second electronic component array include: The first light with the first wavelength is used to irradiate the first substrate where the electronic components in the Kth column of the first electronic component array are located, so that the electronic components are thermally decomposed or photolyzed to lose viscosity, and the electronic components in the Kth column are all peeled off and bonded to the second upper surface of the second substrate; and the first substrate is displaced by a distance (Y2-Y1) relative to the second substrate along the second axis direction, and then the first light with the first wavelength is used to irradiate the first substrate where the electronic components in the (K+1)th column of the first electronic component array are located, so that the electronic components are thermally decomposed or photolyzed to lose viscosity, and the electronic components in the (K+1)th column are all or partially peeled off and bonded to the second upper surface of the second substrate, where K is a natural number, and 1
Figure 112119959-A0305-02-0055-107
K
Figure 112119959-A0305-02-0055-166
(N-1); wherein, when all or part of the electronic components located on the first substrate are selectively peeled off and bonded to the second upper surface of the second substrate, the second electronic component array can be formed on the second substrate.
如請求項11所述的可調整間距的巨量轉移電子元件的方法,且更包括下列步驟:提供一第三基板,並將該第三基板設置於該第二基板下方,該第三基板具有相對的第三上表面與第三下表面,且該第二基板的該第二上表面面向該第三基板的該第三上表面;以及將位在該第二基板的該等電子元件全部或部分轉移至該第三基板,並在該第三基板形成一個第三電子元件陣列,且該第三電子元件陣列之行距與列距分別為X2、Y2。 A method for mass transfer of electronic components with adjustable spacing as described in claim 11, further comprising the following steps: providing a third substrate, and placing the third substrate below the second substrate, the third substrate having a third upper surface and a third lower surface opposite to each other, and the second upper surface of the second substrate faces the third upper surface of the third substrate; and transferring all or part of the electronic components located on the second substrate to the third substrate, and forming a third electronic component array on the third substrate, and the row spacing and column spacing of the third electronic component array are X2 and Y2 respectively. 如請求項12所述的可調整間距的巨量轉移電子元件的方法,其中該第三電子元件陣列的形成步驟,包括: 提供一具第二波長的第二光於該第二基板上方,並使該具第二波長的第二光照射該第二電子元件陣列的第J行的該等電子元件所在的該第二基板,使該第二基板被熱解或光解失去黏性,並使第J行的該等電子元件全部或部分被剝離並接合於該第三基板的該第三上表面;以及使該第二基板相對於該第三基板沿該第一軸方向位移(X2-X1)的距離,然後使該具第二波長的第二光照射該第二電子元件陣列的第(J+1)行的該等電子元件所在的該第二基板,使該第二基板被熱解或光解而失去黏性,並使第(J+1)行的該等電子元件全部或部分被剝離並接合於該第三基板的該第三上表面,J為自然數,且1
Figure 112119959-A0305-02-0056-167
J
Figure 112119959-A0305-02-0056-170
(M-1);其中,當位在該第二基板的該等電子元件全部或部分被選擇性剝離並接合於該第三基板的該第三上表面後,便可在該第三基板形成該第三電子元件陣列。
In the method for mass transferring electronic components with adjustable spacing as claimed in claim 12, the step of forming the third electronic component array comprises: A second light with a second wavelength is provided above the second substrate, and the second light with the second wavelength is used to irradiate the second substrate where the electronic components in the Jth row of the second electronic component array are located, so that the second substrate is thermally decomposed or photolyzed to lose viscosity, and the electronic components in the Jth row are completely or partially peeled off and bonded to the third upper surface of the third substrate; and the second substrate is displaced by a distance (X2-X1) relative to the third substrate along the first axis direction, and then the second light with the second wavelength is used to irradiate the second substrate where the electronic components in the (J+1)th row of the second electronic component array are located, so that the second substrate is thermally decomposed or photolyzed to lose viscosity, and the electronic components in the (J+1)th row are completely or partially peeled off and bonded to the third upper surface of the third substrate, where J is a natural number, and 1
Figure 112119959-A0305-02-0056-167
J
Figure 112119959-A0305-02-0056-170
(M-1); wherein, when all or part of the electronic components located on the second substrate are selectively peeled off and bonded to the third upper surface of the third substrate, the third electronic component array can be formed on the third substrate.
如請求項10所述的可調整間距的巨量轉移電子元件的方法,其中該第二電子元件陣列之行距與列距分別為X2、Y1,且該第二電子元件陣列的形成步驟,包括:使該具第一波長的第一光照射該第一電子元件陣列的第J行的該等電子元件所在的該第一基板,使其熱解或光解而失去黏性,並使第J行的該等電子元件全部或部分被剝離並接合於該第二基板的該第二上表面;以及使該第一基板相對於該第二基板沿該第一軸方向位移(X2-X1)的距離,然後使該具第一波長的第一光照射該第一電子元件陣列的第(J+1)行的該等電子元件所在的該第一基板,使其被熱解或光解而失去黏性,並使 第(J+1)行的該等電子元件全部或部分被剝離並接合於該第二基板的該第二上表面,J為自然數,且1
Figure 112119959-A0305-02-0057-111
J
Figure 112119959-A0305-02-0057-171
(M-1);其中,當位在該第一基板的該等電子元件全部或部分被選擇性剝離並接合於該第二基板的該第二上表面後,便可在該第二基板形成該第二電子元件陣列。
A method for mass transfer of electronic components with adjustable spacing as described in claim 10, wherein the row spacing and column spacing of the second electronic component array are X2 and Y1 respectively, and the step of forming the second electronic component array comprises: irradiating the first light with a first wavelength on the first substrate where the electronic components of the Jth row of the first electronic component array are located, causing the first light to thermally decompose or photodecompose to lose viscosity, and causing the electronic components of the Jth row to be completely or partially peeled off and bonded to the second substrate the second upper surface of the board; and displacing the first substrate relative to the second substrate along the first axis direction by a distance of (X2-X1), and then irradiating the first substrate where the electronic components of the (J+1)th row of the first electronic component array are located with the first light having a first wavelength, so that the first substrate is thermally decomposed or photolyzed to lose viscosity, and the electronic components of the (J+1)th row are completely or partially peeled off and bonded to the second upper surface of the second substrate, where J is a natural number, and 1
Figure 112119959-A0305-02-0057-111
J
Figure 112119959-A0305-02-0057-171
(M-1); wherein, when all or part of the electronic components located on the first substrate are selectively peeled off and bonded to the second upper surface of the second substrate, the second electronic component array can be formed on the second substrate.
如請求項14所述的可調整間距的巨量轉移電子元件的方法,且更包括下列步驟:提供一第三基板,並將該第三基板設置於該第二基板下方,該第三基板具有相對的第三上表面與第三下表面,且該第二基板的該第二上表面面向該第三基板的該第三上表面;以及將位在該第二基板的該等電子元件全部或部分轉移至該第三基板,並在該第三基板形成一第三電子元件陣列,且該第三電子元件陣列之行距與列距分別為X2、Y2。 A method for mass transfer of electronic components with adjustable spacing as described in claim 14, further comprising the following steps: providing a third substrate, and placing the third substrate below the second substrate, the third substrate having a third upper surface and a third lower surface opposite to each other, and the second upper surface of the second substrate faces the third upper surface of the third substrate; and transferring all or part of the electronic components located on the second substrate to the third substrate, and forming a third electronic component array on the third substrate, and the row spacing and column spacing of the third electronic component array are X2 and Y2 respectively. 如請求項15所述的可調整間距的巨量轉移電子元件的方法,其中該第三電子元件陣列的形成步驟,包括:提供一具第二波長的第二光於該第二基板上方,並使該具第二波長的第二光照射該第二電子元件陣列的第K列的該等電子元件所在的該第二基板,使該第二基板被熱解或光解失去黏性,並使第J行的該等電子元件全部或部分被剝離並接合於該第三基板的該第三上表面;以及使該第二基板相對於該第三基板沿該第二軸方向位移(Y2-Y1)的距離,然後使該具第二波長的第二光照射該第二電子元件陣列的第(K+1)列的該等電子元件所在的該第二基板,使該第二基板被熱解或光解而 失去黏性,並使第(K+1)列的該等電子元件全部或部分被剝離並接合於該第三基板的該第三上表面,K為自然數,且1
Figure 112119959-A0305-02-0058-113
K
Figure 112119959-A0305-02-0058-114
(N-1);其中,當位在該第二基板的該等電子元件全部或部分被選擇性剝離並接合於該第三基板的該第三上表面後,便可在該第三基板形成該第三電子元件陣列。
The method for mass transfer of electronic components with adjustable spacing as described in claim 15, wherein the step of forming the third electronic component array comprises: providing a second light with a second wavelength above the second substrate, and irradiating the second light with the second wavelength on the second substrate where the electronic components in the Kth column of the second electronic component array are located, so that the second substrate is thermally decomposed or photodecomposed to lose viscosity, and the electronic components in the Jth row are completely or partially peeled off and bonded to the third substrate; the third upper surface; and displacing the second substrate relative to the third substrate along the second axis direction by a distance of (Y2-Y1), and then irradiating the second substrate where the electronic components of the (K+1)th column of the second electronic component array are located with the second light having the second wavelength, so that the second substrate is thermally decomposed or photolyzed to lose viscosity, and the electronic components of the (K+1)th column are completely or partially peeled off and bonded to the third upper surface of the third substrate, K is a natural number, and 1
Figure 112119959-A0305-02-0058-113
K
Figure 112119959-A0305-02-0058-114
(N-1); wherein, when all or part of the electronic components located on the second substrate are selectively peeled off and bonded to the third upper surface of the third substrate, the third electronic component array can be formed on the third substrate.
如請求項10所述的可調整間距的巨量轉移電子元件的方法,其中該第一基板為一熱解膠膜,且該具第一波長的第一光為一波長介於100奈米至12000奈米的光。 A method for mass transfer of electronic components with adjustable spacing as described in claim 10, wherein the first substrate is a pyrolytic adhesive film, and the first light with a first wavelength is a light with a wavelength between 100 nanometers and 12,000 nanometers. 如請求項10所述的可調整間距的巨量轉移電子元件的方法,其中該第一基板為一光解膠膜,且該具第一波長的第一光為一波長介於100奈米至12000奈米的光。 A method for mass transfer of electronic components with adjustable spacing as described in claim 10, wherein the first substrate is a photoresist film, and the first light with a first wavelength is a light with a wavelength between 100 nanometers and 12,000 nanometers. 如請求項13或16所述的可調整間距的巨量轉移電子元件的方法,其中該第二基板為一熱解膠膜,且該具第二波長的第二光為一波長介於100奈米至12000奈米的光。 A method for mass transfer of electronic components with adjustable spacing as described in claim 13 or 16, wherein the second substrate is a pyrolytic adhesive film, and the second light with a second wavelength is a light with a wavelength between 100 nanometers and 12,000 nanometers. 如請求項13或16所述的可調整間距的巨量轉移電子元件的方法,其中該第二基板為一光解膠膜,且該具第二波長的第二光為一波長介於100奈米至12000奈米的光。 A method for mass transfer of electronic components with adjustable spacing as described in claim 13 or 16, wherein the second substrate is a photoresist film, and the second light with a second wavelength is a light with a wavelength between 100 nanometers and 12,000 nanometers. 如請求項10所述的可調整間距的巨量轉移電子元件的方法,其中該等電子元件為選自一個以上由發光二極體、雷射二極體及半導體元件所構成之群組。 A method for mass transfer of electronic components with adjustable spacing as described in claim 10, wherein the electronic components are selected from one or more groups consisting of light-emitting diodes, laser diodes and semiconductor components. 如請求項21所述的可調整間距的巨量轉移電子元件的方法,其中該等發光二極體所發出的光為紅光、綠光、藍光、黃光、白光、紅外光或紫外光。 A method for mass transfer of electronic components with adjustable spacing as described in claim 21, wherein the light emitted by the light-emitting diodes is red light, green light, blue light, yellow light, white light, infrared light or ultraviolet light. 如請求項21所述的可調整間距的巨量轉移電子元件的方法,其中該等雷射二極體的波長介於390奈米至1700奈米。 A method for mass transfer of electronic components with adjustable spacing as described in claim 21, wherein the wavelength of the laser diodes is between 390 nanometers and 1700 nanometers. 如請求項21所述的可調整間距的巨量轉移電子元件的方法,其中該等半導體元件為選自一個以上由處理器、記憶體IC、微元件IC、邏輯IC及類比IC所構成的群組。 A method for mass transferring electronic components with adjustable spacing as described in claim 21, wherein the semiconductor components are selected from one or more of the group consisting of processors, memory ICs, micro-component ICs, logic ICs, and analog ICs. 一種可調整間距的巨量轉移電子元件的方法,其步驟包括:提供一第一基板,該第一基板具有相對的第一上表面與第一下表面,其中該第一基板的該第一上表面具有複數個電子元件,且該等電子元件分別沿第一軸方向與第二軸方向排列,形成一個由M行電子元件乘以N列電子元件排列所形成的第一電子元件陣列,其中,該第一軸方向與該第二軸方向實質互相垂直,M、N為大於1的自然數,且該第一電子元件陣列之行距、列距分別為X1、Y1,且X1、Y1>0;提供一第二基板,並將該第二基板設置於該第一基板下方,該第二基板具有相對的第二上表面與第二下表面,且該第一基板的該第一上表面面向該第二基板的該第二上表面;以及提供一具第一波長的第一光於該第一基板上方,且藉由該第一基板與該第二基板沿該第一軸方向的相對移動,使該第一電子元件陣列中的該等電子元件所在的該第一基板被該第一光沿該第一軸方向依序且不間隔地逐行照射而被熱解或光解而失去黏性,或沿該第二軸方向的相對移動,使該第一電子元件陣列中的該等電子元件所在的該第一基板被該第一光沿該第二軸方向依序且不間隔地逐列照射而被熱解或光解而失去黏性,且將位在該第一基板的該等電子元件全部剝離且接合至該第二基板,並在該第二基板的該第二上表面形成一個由P行電子元件乘以Q列電子元件排列所形成的第 二電子元件陣列,其中P、Q為大於1的自然數,P≠M及/或Q≠N,且該第二電子元件陣列之行距為X2或列距為Y2,其中X2、Y2>0,且X1≠X2,Y1≠Y2。 A method for mass transfer of electronic components with adjustable spacing includes the following steps: providing a first substrate, the first substrate having a first upper surface and a first lower surface opposite to each other, wherein the first upper surface of the first substrate has a plurality of electronic components, and the electronic components are arranged along a first axis direction and a second axis direction, respectively, to form a first electronic component array formed by arranging M rows of electronic components by N columns of electronic components, wherein the first axis direction and the second axis direction are substantially parallel to each other. The first electronic element array is perpendicular to each other, M and N are natural numbers greater than 1, and the row spacing and column spacing of the first electronic element array are X1 and Y1 respectively, and X1 and Y1>0; a second substrate is provided, and the second substrate is arranged below the first substrate, the second substrate has a second upper surface and a second lower surface opposite to each other, and the first upper surface of the first substrate faces the second upper surface of the second substrate; and a first light with a first wavelength is provided above the first substrate, and the first light is emitted by the first substrate. The first substrate and the second substrate move relative to each other along the first axis direction, so that the first substrate where the electronic components in the first electronic component array are located is irradiated by the first light in sequence and row by row along the first axis direction without intervals to be thermally decomposed or photolyzed to lose viscosity, or the first substrate and the second substrate move relative to each other along the second axis direction, so that the first substrate where the electronic components in the first electronic component array are located is irradiated by the first light in sequence and row by row along the second axis direction without intervals to be thermally decomposed or photolyzed. The adhesiveness is lost, and all the electronic components located on the first substrate are peeled off and bonded to the second substrate, and a second electronic component array formed by P rows of electronic components multiplied by Q columns of electronic components is formed on the second upper surface of the second substrate, where P and Q are natural numbers greater than 1, P≠M and/or Q≠N, and the row spacing of the second electronic component array is X2 or the column spacing is Y2, where X2, Y2>0, and X1≠X2, Y1≠Y2. 如請求項25所述的可調整間距的巨量轉移電子元件的方法,其中該第二電子元件陣列之列距為Y2,且該第二電子元件陣列之形成步驟,包括:將位在該第一基板的第R1列的該等電子元件作為該第一基板沿該第一軸方向的一第一基準線,將位在該第二基板的第R2列的該等電子元件作為該第二基板沿該第一軸方向的一第二基準線,並使該第一基準線對準該第二基準線;以及使該具第一波長的第一光照射位在該第一電子元件陣列的第N1列的該或該等電子元件所在的該第一基板,使其被熱解或光解而失去黏性,並使位在該第一基板的第N1列的該或該等電子元件被選擇性剝離,並接合至該第二基板的該第二上表面,使其位在第二電子元件陣列的第N2列,其中R1、R2、N1、N2為自然數,N1
Figure 112119959-A0305-02-0060-115
N,N2
Figure 112119959-A0305-02-0060-116
Q,且1
Figure 112119959-A0305-02-0060-117
R1
Figure 112119959-A0305-02-0060-118
N1,1
Figure 112119959-A0305-02-0060-119
R2
Figure 112119959-A0305-02-0060-120
N2;其中,當位在該第一基板的該第一電子元件陣列的第N1列的該或該等電子元件被轉移至該第二基板的該第二電子元件陣列的第N2列時,其沿該第二軸方向的相對移動距離為[(N2-R2)*Y2-(N1-R1)*Y1]。
A method for mass transfer of electronic components with adjustable spacing as described in claim 25, wherein the row spacing of the second electronic component array is Y2, and the steps of forming the second electronic component array include: using the electronic components located in the R1th row of the first substrate as a first reference line of the first substrate along the first axis direction, using the electronic components located in the R2th row of the second substrate as a second reference line of the second substrate along the first axis direction, and making the first reference line Aligning the second reference line; and irradiating the first substrate where the electronic components in the N1th row of the first electronic component array are located with the first light having the first wavelength, so that the electronic components are thermally decomposed or photolyzed to lose viscosity, and the electronic components in the N1th row of the first substrate are selectively peeled off and bonded to the second upper surface of the second substrate so that the electronic components are located in the N2th row of the second electronic component array, wherein R1, R2, N1, and N2 are natural numbers, and N1 is
Figure 112119959-A0305-02-0060-115
N, N2
Figure 112119959-A0305-02-0060-116
Q, and 1
Figure 112119959-A0305-02-0060-117
R1
Figure 112119959-A0305-02-0060-118
N1,1
Figure 112119959-A0305-02-0060-119
R2
Figure 112119959-A0305-02-0060-120
N2; wherein, when the electronic components located in the N1th row of the first electronic component array of the first substrate are transferred to the N2th row of the second electronic component array of the second substrate, the relative movement distance along the second axis direction is [(N2-R2)*Y2-(N1-R1)*Y1].
如請求項26所述的可調整間距的巨量轉移電子元件的方法,且更包括下列步驟: 提供一第三基板,並將該第三基板設置於該第二基板下方,該第三基板具有相對的第三上表面與第三下表面,且該第二基板的該第二上表面面向該第三基板的該第三上表面;以及將位在該第二基板的該第二電子元件陣列轉移至該第三基板,並在該第三基板形成一個由U行電子元件乘以V列電子元件排列所形成的第三電子元件陣列,且該第三電子元件陣列之行距與列距分別為X2、Y2,其中U、V為大於1的自然數。 A method for mass transfer of electronic components with adjustable spacing as described in claim 26, and further comprising the following steps: Providing a third substrate and placing the third substrate below the second substrate, the third substrate having a third upper surface and a third lower surface opposite to each other, and the second upper surface of the second substrate faces the third upper surface of the third substrate; and transferring the second electronic component array located on the second substrate to the third substrate, and forming a third electronic component array formed by arranging U rows of electronic components by V columns of electronic components on the third substrate, and the row spacing and column spacing of the third electronic component array are X2 and Y2 respectively, where U and V are natural numbers greater than 1. 如請求項27所述的可調整間距的巨量轉移電子元件的方法,其中該第三電子元件陣列之形成步驟,包括:將位在該第二基板的第S1行的該等電子元件作為該第二基板沿該第二軸方向的一第三基準線,將位在該第三基板的第S2行的該等電子元件作為該第三基板沿該第二軸方向的一第四基準線,並使該第三基準線對準該第四基準線;以及提供一具第二波長的第二光於該第二基板上方,使該具第二波長的第二光照射位在該第二電子元件陣列的第M1行的該或該等電子元件所在的該第二基板,使其被熱解或光解而失去黏性且將位在該第二基板的第M1行的該或該等電子元件被選擇性剝離,並接合至該第三基板的該第三上表面,使其位在第三電子元件陣列的第M2列,其中S1、S2、M1、M2為自然數,M1
Figure 112119959-A0305-02-0061-121
M,M2
Figure 112119959-A0305-02-0061-122
U,且1
Figure 112119959-A0305-02-0061-123
S1
Figure 112119959-A0305-02-0061-124
M1,1
Figure 112119959-A0305-02-0061-125
S2
Figure 112119959-A0305-02-0061-126
M2;其中,當位在該第二基板的該第二電子元件陣列的第M1行的該或該等電子元件被轉移至該第三基板的該第三電子元件陣列的第M2行時,其沿該第一軸方向的相對移動距離為[(M2-S2)*X2-(M1-S1)*X1]。
A method for mass transferring electronic components with adjustable spacing as described in claim 27, wherein the step of forming the third electronic component array includes: using the electronic components located in the S1th row of the second substrate as a third baseline of the second substrate along the second axis, using the electronic components located in the S2th row of the third substrate as a fourth baseline of the third substrate along the second axis, and aligning the third baseline with the fourth baseline; and providing a second wavelength A second light having a second wavelength is directed above the second substrate, so that the second light having a second wavelength irradiates the second substrate where the electronic components located in the M1th row of the second electronic component array are located, so that the electronic components are thermally decomposed or photolyzed to lose viscosity and the electronic components located in the M1th row of the second substrate are selectively peeled off and bonded to the third upper surface of the third substrate so that the electronic components are located in the M2th row of the third electronic component array, wherein S1, S2, M1, and M2 are natural numbers, and M1 is
Figure 112119959-A0305-02-0061-121
M, M2
Figure 112119959-A0305-02-0061-122
U, and 1
Figure 112119959-A0305-02-0061-123
S1
Figure 112119959-A0305-02-0061-124
M1,1
Figure 112119959-A0305-02-0061-125
S2
Figure 112119959-A0305-02-0061-126
M2; wherein, when the electronic components located in the M1th row of the second electronic component array of the second substrate are transferred to the M2th row of the third electronic component array of the third substrate, the relative movement distance along the first axis direction is [(M2-S2)*X2-(M1-S1)*X1].
如請求項25所述的可調整間距的巨量轉移電子元件的方法,其中該第二電子元件陣列之行距為X2,且該第二電子元件陣列之形成步驟,包括:將位在該第一基板的第S1行的該等電子元件作為該第一基板沿該第二軸方向的一第一基準線,將位在該第二基板的第S2行的該等電子元件作為該第二基板沿該第二軸方向的一第二基準線,並使該第一基準線對準該第二基準線;以及使該具第一波長的第一光照射位在該第一電子元件陣列的第M1行的該或該等電子元件所在的該第一基板,使其被熱解或光解而失去黏性且將位在該第一基板的第M1行的該或該等電子元件被選擇性剝離,並接合至該第二基板的該第二上表面,使其位在第二電子元件陣列的第M2列,其中S1、S2、M1、M2為自然數,M1
Figure 112119959-A0305-02-0062-127
M,M2
Figure 112119959-A0305-02-0062-128
P,且1
Figure 112119959-A0305-02-0062-129
S1
Figure 112119959-A0305-02-0062-130
M1,1
Figure 112119959-A0305-02-0062-131
S2
Figure 112119959-A0305-02-0062-132
M2;其中,當位在該第一基板的該第一電子元件陣列的第M1行的該或該等電子元件被轉移至該第二基板的該第二電子元件陣列的第M2行時,其沿該第一軸方向的相對移動距離為[(M2-S2)*X2-(M1-S1)*X1]。
A method for mass transfer of electronic components with adjustable spacing as described in claim 25, wherein the row spacing of the second electronic component array is X2, and the steps of forming the second electronic component array include: using the electronic components located in the S1th row of the first substrate as a first reference line of the first substrate along the second axis direction, using the electronic components located in the S2th row of the second substrate as a second reference line of the second substrate along the second axis direction, and making the first reference line Aligning the second reference line; and irradiating the first light with the first wavelength to the first substrate where the electronic components in the M1th row of the first electronic component array are located, so that the electronic components are thermally decomposed or photolyzed to lose viscosity and the electronic components in the M1th row of the first substrate are selectively peeled off and bonded to the second upper surface of the second substrate so that the electronic components are located in the M2th row of the second electronic component array, wherein S1, S2, M1, and M2 are natural numbers, and M1
Figure 112119959-A0305-02-0062-127
M, M2
Figure 112119959-A0305-02-0062-128
P, and 1
Figure 112119959-A0305-02-0062-129
S1
Figure 112119959-A0305-02-0062-130
M1,1
Figure 112119959-A0305-02-0062-131
S2
Figure 112119959-A0305-02-0062-132
M2; wherein, when the electronic components located in the M1th row of the first electronic component array of the first substrate are transferred to the M2th row of the second electronic component array of the second substrate, the relative movement distance along the first axis direction is [(M2-S2)*X2-(M1-S1)*X1].
如請求項29所述的可調整間距的巨量轉移電子元件的方法,且更包括下列步驟:提供一第三基板,並將該第三基板設置於該第二基板下方,該第三基板具有相對的第三上表面與第三下表面,且該第二基板的該第二上表面面向該第三基板的該第三上表面;以及將位在該第二基板的該第二電子元件陣列轉移至該第三基板,並在該第三基板形成一個由U行電子元件乘以V列電子元件排列所形成的第 三電子元件陣列,且該第三電子元件陣列之行距與列距分別為X2、Y2,其中U、V為大於1的自然數。 A method for mass transfer of electronic components with adjustable spacing as described in claim 29, and further comprising the following steps: providing a third substrate and placing the third substrate below the second substrate, the third substrate having a third upper surface and a third lower surface opposite to each other, and the second upper surface of the second substrate facing the third upper surface of the third substrate; and transferring the second electronic component array located on the second substrate to the third substrate, and forming a third electronic component array formed by arranging U rows of electronic components by V columns of electronic components on the third substrate, and the row spacing and column spacing of the third electronic component array are X2 and Y2 respectively, wherein U and V are natural numbers greater than 1. 如請求項30所述的可調整間距的巨量轉移電子元件的方法,其中該第三電子元件陣列之形成步驟,包括:將位在該第二基板的第R1列的該等電子元件作為該第二基板沿該第一軸方向的一第三基準線,將位在該第三基板的第R2列的該等電子元件作為該第三基板沿該第一軸方向的一第四基準線,並使該第三基準線對準該第四基準線;以及提供一具第二波長的第二光於該第二基板上方,使該具第二波長的第二光照射位在該第二電子元件陣列的第N1列的該或該等電子元件所在的該第二基板,使其被熱解或光解而失去黏性,並使位在該第二基板的第N1列的該或該等電子元件被選擇性剝離,並接合至該第三基板的該第三上表面,使其位在第三電子元件陣列的第N2列,其中R1、R2、N1、N2為自然數,N1
Figure 112119959-A0305-02-0063-133
N,N2
Figure 112119959-A0305-02-0063-134
V,且1
Figure 112119959-A0305-02-0063-135
R1
Figure 112119959-A0305-02-0063-136
N1,1
Figure 112119959-A0305-02-0063-137
R2
Figure 112119959-A0305-02-0063-138
N2;其中,當位在該第二基板的該第二電子元件陣列的第N1列的該或該等電子元件被轉移至該第三基板的該第三電子元件陣列的第N2列時,其沿該第二軸方向的相對移動距離為[(N2-R2)*Y2-(N1-R1)*Y1]。
A method for mass transferring electronic components with adjustable spacing as described in claim 30, wherein the step of forming the third electronic component array comprises: using the electronic components located in the R1th row of the second substrate as a third reference line of the second substrate along the first axis, using the electronic components located in the R2th row of the third substrate as a fourth reference line of the third substrate along the first axis, and aligning the third reference line with the fourth reference line; and providing a second wavelength A second light having a second wavelength is directed above the second substrate, so that the second light having a second wavelength irradiates the second substrate where the electronic components located in the N1th row of the second electronic component array are located, so that the electronic components are thermally decomposed or photolyzed to lose viscosity, and the electronic components located in the N1th row of the second substrate are selectively peeled off and bonded to the third upper surface of the third substrate so that the electronic components are located in the N2th row of the third electronic component array, wherein R1, R2, N1, and N2 are natural numbers, and N1 is a first number.
Figure 112119959-A0305-02-0063-133
N, N2
Figure 112119959-A0305-02-0063-134
V, and 1
Figure 112119959-A0305-02-0063-135
R1
Figure 112119959-A0305-02-0063-136
N1,1
Figure 112119959-A0305-02-0063-137
R2
Figure 112119959-A0305-02-0063-138
N2; wherein, when the electronic components located in the N1th row of the second electronic component array of the second substrate are transferred to the N2th row of the third electronic component array of the third substrate, the relative movement distance along the second axis direction is [(N2-R2)*Y2-(N1-R1)*Y1].
如請求項25所述的可調整間距的巨量轉移電子元件的方法,其中該第一基板為一熱解膠膜,且該具第一波長的第一光為一波長介於100奈米至12000奈米的光。 A method for mass transfer of electronic components with adjustable spacing as described in claim 25, wherein the first substrate is a pyrolytic adhesive film, and the first light with a first wavelength is a light with a wavelength between 100 nanometers and 12,000 nanometers. 如請求項25所述的可調整間距的巨量轉移電子元件的方法,其中該第一基板為一光解膠膜,且該具第一波長的第一光為一波長介於100奈米至12000奈米的光。 A method for mass transfer of electronic components with adjustable spacing as described in claim 25, wherein the first substrate is a photoresist film, and the first light with a first wavelength is a light with a wavelength between 100 nanometers and 12,000 nanometers. 如請求項28或31所述的可調整間距的巨量轉移電子元件的方法,其中該第二基板為一熱解膠膜,且該具第二波長的第二光為一波長介於100奈米至12000奈米的光。 A method for mass transfer of electronic components with adjustable spacing as described in claim 28 or 31, wherein the second substrate is a pyrolytic adhesive film, and the second light with a second wavelength is a light with a wavelength between 100 nanometers and 12,000 nanometers. 如請求項28或31所述的可調整間距的巨量轉移電子元件的方法,其中該第二基板為一光解膠膜,且該具第二波長的第二光為一波長介於100奈米至12000奈米的光。 A method for mass transfer of electronic components with adjustable spacing as described in claim 28 or 31, wherein the second substrate is a photoresist film, and the second light with a second wavelength is a light with a wavelength between 100 nanometers and 12,000 nanometers. 如請求項25所述的可調整間距的巨量轉移電子元件的方法,其中該等電子元件為選自一個以上由發光二極體、雷射二極體及半導體元件所構成之群組。 A method for mass transfer of electronic components with adjustable spacing as described in claim 25, wherein the electronic components are selected from one or more groups consisting of light-emitting diodes, laser diodes and semiconductor components. 如請求項36所述的可調整間距的巨量轉移電子元件的方法,其中該等發光二極體所發出的光為紅光、綠光、藍光、黃光、白光、紅外光或紫外光。 A method for mass transfer of electronic components with adjustable spacing as described in claim 36, wherein the light emitted by the light-emitting diodes is red light, green light, blue light, yellow light, white light, infrared light or ultraviolet light. 如請求項36所述的可調整間距的巨量轉移電子元件的方法,其中該等雷射二極體的波長介於390奈米至1700奈米。 A method for mass transfer of electronic components with adjustable spacing as described in claim 36, wherein the wavelength of the laser diodes is between 390 nanometers and 1700 nanometers. 如請求項36所述的可調整間距的巨量轉移電子元件的方法,其中該等半導體元件為選自一個以上由處理器、記憶體IC、微元件IC、邏輯IC及類比IC所構成的群組。 A method for mass transferring electronic components with adjustable spacing as described in claim 36, wherein the semiconductor components are selected from one or more of the group consisting of processors, memory ICs, micro-component ICs, logic ICs, and analog ICs.
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