TWI863775B - Bonding method of electronic device and method of mass transferring electronic devices - Google Patents
Bonding method of electronic device and method of mass transferring electronic devices Download PDFInfo
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/20—Bonding
- B23K26/21—Bonding by welding
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
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Abstract
Description
本發明乃揭示一種電子元件的接合方法與巨量轉移電子元件的方法。The present invention discloses a method for bonding electronic components and a method for mass transferring electronic components.
發光二極體具備主動發光、高亮度、節省能源等優點,因此已經廣泛地被應用於照明、顯示器、投影機等技術領域中,且微發光二極體顯示器(Micro LED display)已逐漸成為新一代的顯示技術。惟,一個高密度(FHD:Full High Density)的顯示器具有 1920 行 x 1080 列大約 200 萬個畫素,每一個畫素還要再分為紅、綠、藍三個次畫素(Sub pixel),因此一個高密度發光二極體顯示器(FHD LED Display)總共有大約 600 萬個LED晶粒(Die),要將 600 萬個晶粒切割後黏貼在顯示器面板的基板上,其關鍵技術在於如何將具量之微型發光二極體精確地轉移至顯示器面板的基板上並加以固定接合。LEDs have the advantages of active luminescence, high brightness, and energy saving, so they have been widely used in technical fields such as lighting, displays, and projectors. Micro LED displays have gradually become a new generation of display technology. However, a FHD (Full High Density) display has 1920 rows x 1080 columns, about 2 million pixels, and each pixel is further divided into three sub-pixels: red, green, and blue. Therefore, a FHD LED display has a total of about 6 million LED dies. To cut and paste these 6 million dies on the substrate of the display panel, the key technology lies in how to accurately transfer a large number of micro-LEDs to the substrate of the display panel and fix them together.
習知的電子元件接合方法主要是利用回流焊接方式,使電子元件藉由錫膏加熱回流後而被焊接到一目標基板上。惟,回流焊接方式的缺點在於在回流過程中,因會有受熱不均導致電子元件飄移、錫膏量過多導致電子元件短路、錫膏量過少導致空焊或回流溫度過低導致冷焊等缺點。The conventional electronic component bonding method mainly utilizes reflow soldering, whereby electronic components are soldered to a target substrate by heating the solder paste and then reflowing. However, the disadvantages of reflow soldering are that during the reflow process, uneven heating may cause electronic components to drift, too much solder paste may cause electronic components to short-circuit, too little solder paste may cause empty soldering, or too low a reflow temperature may cause cold soldering.
此外,習知的巨量轉移電子元件的方法主要以靜電轉移、磁力轉移、微轉印以及流體組裝等方法為主。惟,這幾種巨量轉移電子元件的方法,其轉移速率與良率仍有待進一步提升。In addition, the known methods for mass transfer of electronic components are mainly electrostatic transfer, magnetic transfer, micro-transfer printing and fluid assembly. However, the transfer rate and yield of these methods for mass transfer of electronic components still need to be further improved.
有鑑於此,一種新穎的電子元件的接合方法以及巨量轉移電子元件的方法乃業界所殷切期盼。In view of this, a novel method for bonding electronic components and a method for mass transferring electronic components are eagerly anticipated by the industry.
本發明乃揭示一種電子元件的接合方法,其步驟包括:提供一第一基板,該第一基板具有相對的第一上表面與第一下表面,其中該第一基板的該第一上表面具有複數電子元件,該等電子元件彼此互相間隔且排列成一列或一行;提供一第二基板,並將該第二基板設置於該第一基板下方,該第二基板具有相對的第二上表面與第二下表面,且該第一上表面面向該第二上表面;以及提供一雷射裝置,該雷射裝置可在該第一基板上射出一線形雷射光,並使該線形雷射光照射位在該第一基板的該第一上表面且排列成一列或一行的該等電子元件,並使該等電子元件自該第一基板的該第一上表面被剝離並接合於該第二基板的該第二上表面。The present invention discloses a method for bonding electronic components, the steps of which include: providing a first substrate, the first substrate having a first upper surface and a first lower surface opposite to each other, wherein the first upper surface of the first substrate has a plurality of electronic components, the electronic components are spaced from each other and arranged in a row or a line; providing a second substrate, and arranging the second substrate below the first substrate, the second substrate having a second upper surface and a second lower surface opposite to each other, and the first upper surface faces the second upper surface; and providing a laser device, the laser device can emit a linear laser light on the first substrate, and the linear laser light irradiates the electronic components located on the first upper surface of the first substrate and arranged in a row or a line, so that the electronic components are peeled off from the first upper surface of the first substrate and bonded to the second upper surface of the second substrate.
如前所述的一種電子元件的接合方法,其中該等電子元件為選自一個以上由發光二極體、雷射二極體及半導體元件所構成之群組。As described above, a method for bonding electronic components, wherein the electronic components are selected from one or more groups consisting of light-emitting diodes, laser diodes and semiconductor components.
如前所述的一種電子元件的接合方法,其中該半導體元件為選自一個由處理器、記憶體IC、微元件IC、邏輯IC及類比IC所構成的群組。In the aforementioned method for bonding electronic components, the semiconductor component is selected from a group consisting of a processor, a memory IC, a micro-component IC, a logic IC, and an analog IC.
如前所述的一種電子元件的接合方法,其中該第二基板為一半導體基板、一陶瓷基板、一金屬基板、一玻璃基板、一印刷電路板、或一軟性印刷電路板。In the aforementioned method for bonding electronic components, the second substrate is a semiconductor substrate, a ceramic substrate, a metal substrate, a glass substrate, a printed circuit board, or a flexible printed circuit board.
如前所述的一種電子元件的接合方法,其中該雷射裝置具有一雷射發散角θ,且該線形雷射光之長度可藉由調整該雷射發散角θ之角度大小而加以控制。其中,該雷射發散角θ之角度為例如但不限於大於或等於一度。In the aforementioned electronic component bonding method, the laser device has a laser divergence angle θ, and the length of the linear laser light can be controlled by adjusting the angle of the laser divergence angle θ. The laser divergence angle θ is, for example but not limited to, greater than or equal to one degree.
如前所述的一種電子元件的接合方法,其中該雷射裝置包括一雷射光源以及一光學元件,且該雷射光源所發出之雷射光乃藉由該光學元件而被轉換成一線形雷射光。In the aforementioned method for bonding electronic components, the laser device includes a laser light source and an optical component, and the laser light emitted by the laser light source is converted into a linear laser light by the optical component.
如前所述的一種電子元件的接合方法,其中該光學元件為一繞射光學元件、及/或一折射光學元件、及/或一反射光學元件。In the aforementioned method for bonding electronic components, the optical component is a diffraction optical component, and/or a refraction optical component, and/or a reflection optical component.
本發明更揭示一種巨量轉移電子元件的方法,其步驟包括:提供一第一基板,該第一基板具有相對的第一上表面與第一下表面,其中該第一基板的該第一上表面具有複數電子元件,且該等電子元件分別沿第一方向與第二方向排列,形成一個由M行電子元件乘以N列電子元件排列所形成的第一電子元件陣列,其中M、N均為大於1的自然數;提供一第二基板,並將該第二基板設置於該第一基板下方,該第二基板具有相對的第二上表面與第二下表面,且該第一上表面面向該第二上表面;以及提供一雷射裝置,該雷射裝置可在該第一基板上射出一線形雷射光,並使該線形雷射光依序照射該第一電子元件陣列中的第P行的該等電子元件或第Q列的該等電子元件,並使該第P行的該等電子元件或該第Q列的該等電子元件自該第一基板的該第一上表面被剝離並接合於該第二基板的該第二上表面,當該第一電子元件陣列中的該等電子元件全部自該第一基板的該第一上表面被剝離並接合於該第二基板的該第二上表面後,便可在該第二基板的該第二上表面上形成一個由M行電子元件乘以N列電子元件排列所形成的第二電子元件陣列,其中P、Q均為自然數,且1≤P≤M,1≤Q≤N。The present invention further discloses a method for mass transfer of electronic components, the steps of which include: providing a first substrate, the first substrate having a first upper surface and a first lower surface opposite to each other, wherein the first upper surface of the first substrate has a plurality of electronic components, and the electronic components are arranged along a first direction and a second direction respectively, forming a first electronic component array formed by M rows of electronic components multiplied by N columns of electronic components, wherein M and N are both natural numbers greater than 1; providing a second substrate, and arranging the second substrate below the first substrate, the second substrate having a second upper surface and a second lower surface opposite to each other, and the first upper surface faces the second upper surface; and providing a laser device, the laser device can emit light on the first substrate. A linear laser light is emitted, and the linear laser light is used to sequentially irradiate the electronic elements in the P-th row or the Q-th column in the first electronic element array, so that the electronic elements in the P-th row or the Q-th column are peeled off from the first upper surface of the first substrate and bonded to the second upper surface of the second substrate. When all the electronic elements in the first electronic element array are peeled off from the first upper surface of the first substrate and bonded to the second upper surface of the second substrate, a second electronic element array formed by arranging M rows of electronic elements by N columns of electronic elements can be formed on the second upper surface of the second substrate, wherein P and Q are natural numbers, and 1≤P≤M, 1≤Q≤N.
如前所述的一種巨量轉移電子元件的方法,其中該等電子元件為選自一個以上由發光二極體、雷射二極體及半導體元件所構成之群組。A method for mass transfer of electronic components as described above, wherein the electronic components are selected from one or more groups consisting of light emitting diodes, laser diodes and semiconductor components.
如前所述的一種巨量轉移電子元件的方法,其中該半導體元件為選自一個由處理器、記憶體IC、微元件IC、邏輯IC及類比IC所構成的群組。A method for mass transfer of electronic components as described above, wherein the semiconductor component is selected from a group consisting of a processor, a memory IC, a micro-component IC, a logic IC and an analog IC.
如前所述的一種巨量轉移電子元件的方法,其中該第二基板為一半導體基板、一陶瓷基板、一金屬基板、一玻璃基板、一印刷電路板、或一軟性印刷電路板。In the method for mass transferring electronic components as described above, the second substrate is a semiconductor substrate, a ceramic substrate, a metal substrate, a glass substrate, a printed circuit board, or a flexible printed circuit board.
如前所述的一種巨量轉移電子元件的方法,其中該雷射裝置具有一雷射發散角θ,且該線形雷射光之長度可藉由調整該雷射發散角θ之角度大小而加以控制。其中,該雷射發散角θ之角度為例如但不限於大於或等於一度。In the method of mass transfer of electronic components as described above, the laser device has a laser divergence angle θ, and the length of the linear laser light can be controlled by adjusting the angle of the laser divergence angle θ. The angle of the laser divergence angle θ is, for example but not limited to, greater than or equal to one degree.
如前所述的一種巨量轉移電子元件的方法,其中該雷射裝置包括一雷射光源以及一光學元件,且該雷射光源所發出之雷射光乃藉由該光學元件而被轉換成一線形雷射光。In the method for mass transfer of electronic components as described above, the laser device includes a laser light source and an optical element, and the laser light emitted by the laser light source is converted into a linear laser light by the optical element.
如前所述的一種巨量轉移電子元件的方法,其中該光學元件為一繞射光學元件、及/或一折射光學元件、及/或一反射光學元件。A method for mass transfer of electronic components as described above, wherein the optical component is a diffraction optical component, and/or a refraction optical component, and/or a reflection optical component.
為了使本發明揭示內容的敘述更加詳盡與完備,下文針對了本發明的實施態樣與具體實施例提出了說明性的描述;但這並非實施或運用本發明具體實施例的唯一形式。以下所揭露的各實施例,在有益的情形下可相互組合或取代,也可在一實施例中附加其他的實施例,而無須進一步的記載或說明。In order to make the description of the disclosure of the present invention more detailed and complete, the following provides an illustrative description of the implementation and specific embodiments of the present invention; however, this is not the only form of implementing or using the specific embodiments of the present invention. The embodiments disclosed below can be combined or replaced with each other under beneficial circumstances, and other embodiments can be added to one embodiment without further recording or description.
在以下描述中,將詳細敘述許多特定細節以使讀者能夠充分理解以下的實施例。然而,可在無此等特定細節之情況下實踐本發明之實施例。在其他情況下,為簡化圖式,熟知的結構與裝置僅示意性地繪示於圖中。In the following description, many specific details will be described in detail to enable the reader to fully understand the following embodiments. However, the embodiments of the present invention can be practiced without these specific details. In other cases, to simplify the drawings, well-known structures and devices are only schematically depicted in the drawings.
實施例Embodiment
實施例一Embodiment 1
首先,請參閱圖1A。如圖1A所示,提供一第一基板10,該第一基板10具有相對的第一上表面10A與第一下表面10B,其中該第一基板10的該第一上表面10A具有複數電子元件12,該等電子元件12彼此互相間隔且排列成一列或一行。該等電子元件12為選自例如但不限於一個以上由發光二極體、雷射二極體及半導體元件所構成之群組,且該半導體元件為選自例如但不限於一個由處理器、記憶體IC、微元件IC、邏輯IC及類比IC所構成的群組。First, please refer to FIG. 1A. As shown in FIG. 1A, a
其次,請參閱圖1B。如圖1B所示,提供一第二基板20,並將該第二基板20設置於該第一基板10下方,該第二基板20具有相對的第二上表面20A與第二下表面20B,且該第一上表面10A面向該第二上表面20A。該第二基板20為例如但不限於一半導體基板、一陶瓷基板、一金屬基板、一玻璃基板、一印刷電路板、或一軟性印刷電路板。Next, please refer to FIG. 1B. As shown in FIG. 1B, a
接著,請參閱圖1C與圖1D。如圖1C所示,提供一雷射裝置30,該雷射裝置30可在該第一基板10上射出一線形雷射光35,並使該線形雷射光35照射位在該第一基板10的該第一上表面10A且排列成一列或一行的該等電子元件12,並使該等電子元件12自該第一基板10的該第一上表面10A被剝離,並如圖1D所示般接合於該第二基板20的該第二上表面20A。該雷射裝置30包括一雷射光源31以及一光學元件32,且該雷射光源31所發出之雷射光乃藉由該光學元件32而被轉換成一線形雷射光35,該光學元件32為例如但不限於一繞射光學元件、及/或一折射光學元件、及/或一反射光學元件。此外,前述雷射裝置30具有一雷射發散角θ,且該線形雷射光35之長度可藉由調整該雷射發散角θ之角度大小而加以控制。其中,該雷射發散角θ之角度為例如但不限於大於或等於一度。Next, please refer to Figure 1C and Figure 1D. As shown in Figure 1C, a
實施例二Embodiment 2
首先,請參閱圖2A。如圖2A所示,提供一第一基板100,該第一基板100具有相對的第一上表面100A與第一下表面100B,其中該第一上表面100A具有複數電子元件120,且該等電子元件120分別沿第一方向與第二方向排列,形成一個由M行電子元件乘以N列電子元件排列所形成的第一電子元件陣列150,其中M、N均為大於1的自然數。該等電子元件120為選自例如但不限於一個以上由發光二極體、雷射二極體及半導體元件所構成之群組,且該半導體元件為選自例如但不限於一個由處理器、記憶體IC、微元件IC、邏輯IC及類比IC所構成的群組。First, please refer to FIG. 2A. As shown in FIG. 2A, a
如圖2A所示,本實施例二的第一電子元件陣列150是由8行沿X軸方向排列的複數電子元件120以及5列沿Y軸方向的複數電子元件120排列所形成,即M=8,N=5,第一方向為X軸方向,第二方向為Y軸方向。惟,根據本發明的其它實施例,M、N也可分別為其它大於1的自然數,且第一、第二方向也可視需要而變更為其它設定的方向。As shown in FIG. 2A , the first
其次,請參閱圖2B。如圖2B所示,提供一第二基板200,並將該第二基板200設置於該第一基板100下方,該第二基板200具有相對的第二上表面200A與第二下表面200B,且該第一上表面100A面向該第二上表面200A。該第二基板200為例如但不限於一半導體基板、一陶瓷基板、一金屬基板、一玻璃基板、一印刷電路板、或一軟性印刷電路板。Next, please refer to FIG. 2B. As shown in FIG. 2B, a
接著,請參閱圖2C~2E。如圖2C~2E所示,提供一雷射裝置300,該雷射裝置300可在該第一基板100上射出一線形雷射光350,並使該線形雷射光350依序照射該第一電子元件陣列150中的第P行的該等電子元件或第Q列的該等電子元件120,並使該第P行的該等電子元件或該第Q列的該等電子元件120自該第一基板100的該第一上表面100A被剝離並接合於該第二基板200的該第二上表面200A,其中P、Q均為自然數,且1≤P≤M,1≤Q≤N。該雷射裝置300包括一雷射光源310以及一光學元件320,且該雷射光源310所發出之雷射光乃藉由該光學元件320而被轉換成一線形雷射光350,該光學元件320為例如但不限於一繞射光學元件、及/或一折射光學元件、及/或一反射光學元件。前述雷射裝置300具有一雷射發散角θ,且該線形雷射光350之長度可藉由調整該雷射發散角θ之角度大小而加以控制。其中,該雷射發散角θ之角度為例如但不限於大於或等於一度。Next, please refer to Figures 2C to 2E. As shown in Figures 2C to 2E, a
如圖2C~2E所示,本實施例二是使該線形雷射光350沿X軸方向依序照射該第一電子元件陣列150中的第1行、第2行、…..第8行的該等電子元件120,並使該該第1行、第2行、…..第8行的該等電子元件120依序自該第一基板100的該第一上表面100A被剝離並接合於該第二基板200的該第二上表面200A,即P=1、2、…、8。惟,根據本發明的其它實施例,該線形雷射光350也可選擇沿Y軸方向依序照射該第一電子元件陣列150中的第1列、第2列、…..第5列的該等電子元件120,並使該第1列、第2列、…..第5列的該等電子元件120依序自該第一基板100的該第一上表面100A被剝離並接合於該第二基板200的該第二上表面200A,即Q=1、2、…、5。As shown in FIGS. 2C to 2E , the second embodiment of the present invention is to irradiate the
最後,請參閱圖2F。如圖2F所示,當該第一電子元件陣列150中的該等電子元件120全部自該第一基板100的該第一上表面100A被剝離並接合於該第二基板200的該第二上表面200A後,便可如圖2F所示般在該第二基板200的該第二上表面200A上形成一個由8行電子元件乘以5列電子元件排列所形成的第二電子元件陣列250。Finally, please refer to Fig. 2F. As shown in Fig. 2F, after all the
雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何熟習此技藝者,在不脫離本發明之精神和範圍內,當可做各種之更動與潤飾,因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。Although the present invention has been disclosed as above by way of embodiments, it is not intended to limit the present invention. Anyone skilled in the art may make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the scope defined in the attached patent application.
10、100:第一基板10, 100: first substrate
10A、100A:第一上表面10A, 100A: first upper surface
10B、100B:第一下表面10B, 100B: first lower surface
12、120:電子元件12, 120: Electronic components
20、200:第二基板20, 200: second substrate
20A、200A:第二上表面20A, 200A: Second upper surface
20B、200B:第二下表面20B, 200B: second lower surface
30、300:雷射裝置30, 300: Laser device
31、310:雷射光源31, 310: Laser light source
32、320:光學元件32, 320: Optical components
150:第一電子元件矩陣150: first electronic component matrix
250:第二電子元件矩陣250: Second electronic component matrix
θ:雷射發散角θ: Laser divergence angle
圖1A~1D是根據本發明一實施例所繪示的電子元件的接合方法。1A to 1D illustrate a method for bonding electronic components according to an embodiment of the present invention.
圖2A~2F是根據本發明另一實施例所繪示的巨量轉移電子元件的方法。2A-2F are diagrams showing a method for mass transferring electronic components according to another embodiment of the present invention.
10:第一基板 10: First substrate
10A:第一上表面 10A: First upper surface
10B:第一下表面 10B: first lower surface
12:電子元件 12: Electronic components
20:第二基板 20: Second substrate
20A:第二上表面 20A: Second upper surface
20B:第二下表面 20B: Second lower surface
30:雷射裝置 30: Laser device
31:雷射光源 31: Laser light source
32:光學元件 32: Optical components
θ:雷射發散角 θ: laser divergence angle
Claims (14)
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| CN202411202003.3A CN120239389A (en) | 2023-12-26 | 2024-08-29 | Method for bonding electronic components and method for mass transferring electronic components |
| JP2024153662A JP7782877B2 (en) | 2023-12-26 | 2024-09-06 | Method for joining electronic devices and method for transferring large quantities of electronic devices |
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| TW202126767A (en) * | 2019-12-20 | 2021-07-16 | 日商日東電工股份有限公司 | Adhesive sheet |
| TW202235576A (en) * | 2020-11-13 | 2022-09-16 | 日商積水化學工業股份有限公司 | Method for producing electronic component, method for producing display device, and support tape |
| TW202326858A (en) * | 2021-11-26 | 2023-07-01 | 日商信越工程股份有限公司 | Laser lift-off method, method for producing receptor substrate, laser lift-off device, and photomask |
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| TW202126767A (en) * | 2019-12-20 | 2021-07-16 | 日商日東電工股份有限公司 | Adhesive sheet |
| TW202235576A (en) * | 2020-11-13 | 2022-09-16 | 日商積水化學工業股份有限公司 | Method for producing electronic component, method for producing display device, and support tape |
| TW202326858A (en) * | 2021-11-26 | 2023-07-01 | 日商信越工程股份有限公司 | Laser lift-off method, method for producing receptor substrate, laser lift-off device, and photomask |
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| 期刊 R. Delmdahl Large-area laser-lift-off processing in microelectronics Physics Procedia 41 Elsevier 2013 241 – 248 * |
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