TWI862593B - Structure for a quantum dot barrier rib and process for preparing the same - Google Patents

Abstract

The present invention relates to a structure for a quantum dot barrier rib and a process for preparing the same. The structure for a quantum dot barrier rib of the present invention comprises a cured film having a uniform film thickness and an appropriate range of film thickness. Here, the reflectance R_SCI measured by the SCI (specular component included) method and the reflectance R_SCE measured by the SCE (specular component excluded) method are reduced, and the ratio between them (R_SCE /R_SCI ) is appropriately adjusted, so that it is possible to satisfy such characteristics as high light-shielding property and low reflectance at the same time while the resolution and pattern characteristics are maintained to be excellent. In addition, when the structure for a quantum dot barrier rib is prepared, it is possible to form a multilayer pattern having a uniform film thickness suitable for the quantum dot barrier ribs in a single development process. Thus, it can be advantageously used for a quantum dot display.

Description

Structure for quantum dot barrier rib and preparation method thereof

The present invention relates to a structure for quantum dot barrier ribs, which structure satisfies characteristics such as high light shielding property and low reflectivity, and a method for preparing the same.

In recent years, there has been increased interest in various electronic devices employing quantum dots (QDs).

Quantum dots are materials that produce quantum confinement as nanocrystals of semiconductor materials with a diameter of about 10 nm or less. Although they are composed of thousands or more electrons, most of them are firmly bound to atomic nuclei, so that the number of unbound free electrons is limited to about 1 to 100. In this case, the energy levels of electrons are confined discontinuously to show electrical and optical characteristics different from those of semiconductors in bulk states forming continuous bands. These quantum dots can produce various colors by generating light wavelengths of different lengths for each particle size even without changing the material type. Since they have the advantages of high color purity and light safety compared to conventional light emitters, they are currently used in various fields such as displays, solar cells, biosensors, and lighting equipment, and are attracting attention as next-generation light-emitting devices.

FIG1 is a schematic diagram illustrating a typical quantum dot device. Referring to FIG1 , the base structure (100) of the quantum dot device includes a transparent substrate (110) and a barrier rib (120), which is formed to separate regions on the transparent substrate (110). Different quantum dot solutions, i.e., a first quantum dot solution (130), a second quantum dot solution (140), and a third quantum dot solution (150), exist in corresponding separation regions. The first quantum dot solution (130), the second quantum dot solution (140), and the third quantum dot solution (150) are composed of quantum dots with different energy levels. That is, when the size or material of the quantum dots is manipulated, they are configured to have different emission wavelength bands.

Here, the blocking rib (120) not only plays a light shielding role, but also plays a role in preventing the various colored compositions discharged into the partition area from mixing. Generally, it can be formed into a film from a photosensitive resin composition.

In this case, the photosensitive resin composition used should be able to prevent the deterioration of contrast and color purity caused by light leakage between picture elements. In recent years (during which research on quantum dot devices has been actively conducted), there has been a demand for enhanced performance in terms of excellent pattern characteristics, low reflectivity, and high light-shielding characteristics. In addition, for application to quantum dot devices, a uniform film and an appropriate film thickness must be achieved to maintain excellent resolution. For example, if the film is not uniform or the film thickness is too small, it is not suitable for use with barrier ribs, so that the quantum dot solution may overflow the barrier ribs, resulting in color mixing or reduced resolution. If the film thickness is adjusted by thickly applying the photosensitive resin composition and curing it in order to solve this problem, it is difficult to achieve uniform coating, and thus there is a problem that stains or contamination may occur.

Detailed description of the invention Technical problem Therefore, the present invention aims to provide a structure for quantum dot barrier ribs (the structure satisfies characteristics such as high light shielding characteristics and low reflectivity while maintaining excellent resolution and pattern characteristics) and a method for preparing the same. Solution to the problem

To achieve the above objectives, the present invention provides a structure for quantum dot barrier ribs, the structure comprising a cured film formed from a photosensitive resin composition, the photosensitive resin composition comprising (A) a copolymer; (B) a photopolymerizable compound; (C) a photopolymerization initiator; and (D) a colorant comprising a black colorant.

The structure for quantum dot barrier ribs has a total thickness of 6 μm or greater and an optical density of 0.05/µm to 2.0/µm, and the reflectivity R _SCI measured by the SCI (including the mirror reflection component) method and the reflectivity R _SCE measured by the SCE (excluding the mirror reflection component) method at a wavelength of 550 nm respectively satisfy the following relationships: (Relationship 1) R _SCI ≤ 5.0% (Relationship 2) R _SCE ≤ 0.5% (Relationship 3) 2 ≤ R _SCE /R _SCI ≤10.

To achieve another object, the present invention provides a structure for quantum dot barrier ribs, the structure comprising a first cured film formed of a first photosensitive resin composition and a second cured film formed of a second photosensitive resin composition on the first cured film.

wherein the first photosensitive resin composition, the second photosensitive resin composition, or both comprise (A) a copolymer; (B) a photopolymerizable compound; (C) a photopolymerization initiator; and (D) a colorant comprising a black colorant, and the structure has a total thickness of 6 µm or greater.

In addition, in order to achieve another object, the present invention provides a method for preparing a structure for quantum dot blocking ribs, the method comprising coating a first photosensitive resin composition on a substrate and curing it to form a first cured film; coating a second photosensitive resin composition on the first cured film and curing it to form a second cured film; and exposing and developing a multilayer cured film comprising the first cured film and the second cured film to form a pattern and then curing it, wherein the first photosensitive resin composition, the second photosensitive resin composition, or both comprise (A) a copolymer; (B) a photopolymerizable compound; (C) a photopolymerization initiator; and (D) a colorant comprising a black colorant. Advantageous Effects of the Invention

The structure for quantum dot barrier ribs of the present invention includes a cured film having a uniform film thickness and an appropriate film thickness range. Here, the reflectivity R _SCI measured by the SCI (including the specular reflection component) method and the reflectivity R _SCE measured by the SCE (excluding the specular reflection component) method are reduced, and the ratio ( _RSCE / _RSCI ) therebetween is appropriately adjusted, so that characteristics such as high light shielding characteristics and low reflectivity can be satisfied at the same time, while the resolution and pattern characteristics are kept excellent. In addition, when the structure for quantum dot barrier ribs is prepared, a multi-layer pattern having a uniform film thickness suitable for the quantum dot barrier ribs can be formed in a single development process. Therefore, it can be advantageously used for quantum dot displays.

Best Mode for Carrying Out the Invention The present invention is not limited to those described below. Instead, it can be modified into various forms as long as the gist of the present invention is not changed.

Throughout this specification, unless expressly stated otherwise, when a part is referred to as “comprising” an element, it should be understood that other elements may be included rather than excluded. Furthermore, unless expressly stated otherwise, all numbers and expressions related to the amounts of components, reaction conditions, etc. used herein should be understood as being modified by the term “about”.

The structure for quantum dot barrier ribs may include a cured film formed of a photosensitive resin composition, the photosensitive resin composition comprising (A) a copolymer; (B) a photopolymerizable compound; (C) a photopolymerization initiator; and (D) a colorant including a black colorant. In this case, the photosensitive resin composition may arbitrarily further comprise at least one selected from the group consisting of: (E) a surfactant, (F) an additive, and (G) a solvent.

According to an embodiment, the structure for quantum dot blocking ribs has a total thickness of 6 μm or more and an optical density of 0.05/μm to 2.0/μm. The transmittance at 550 nm can be measured using an optical densitometer (361T manufactured by Xlite Corporation) to obtain the optical density (OD, unit: /μm) of the structure for quantum dot blocking ribs based on a thickness of 1 μm.

In addition, in the structure for quantum dot barrier ribs, the reflectivity R _SCI measured by the SCI (including the mirror reflection component) method and the reflectivity R _SCE measured by the SCE (excluding the mirror reflection component) method at a wavelength of 360 nm to 740 nm, or 550 nm can respectively satisfy the following relationships. (Relationship 1) R _SCI ≤ 5.0% (Relationship 2) R _SCE ≤ 0.5% (Relationship 3) 2 ≤ R _SCE /R _SCI ≤ 10.

_RSCI refers to the total reflectance, which includes specular reflection of light incident on the surface of an object and reflected at the same angle, and diffuse reflection of light scattered and reflected in various directions without specular reflection. _RSCE refers only to diffuse reflection, that is, the total reflectance from which specular reflection is subtracted.

In the following, each component of the photosensitive resin composition will be explained in detail.

As used herein, the term “(meth)acryl” refers to “acryl” and/or “methacryl”, and the term “(meth)acrylate” refers to “acrylate” and/or “methacrylate”.

The weight average molecular weight (g/mol, Da) of each component described below was measured by gel permeation chromatography (GPC, eluent: tetrahydrofuran) with reference to polystyrene standards. (A) Copolymer

The copolymer (A) used in the present invention may contain at least two structural units selected from the group consisting of: (a-1) structural units derived from ethylenically unsaturated carboxylic acids, ethylenically unsaturated carboxylic acid anhydrides or combinations thereof, (a-2) structural units derived from ethylenically unsaturated compounds containing aromatic rings, (a-3) structural units derived from ethylenically unsaturated compounds containing epoxy groups, and (a-4) structural units derived from ethylenically unsaturated compounds different from (a-1), (a-2) and (a-3).

According to the embodiment, the copolymer (A) may include structural units (a-1) and (a-4).

According to another embodiment, the copolymer (A) may include structural units (a-1), (a-2) and (a-4).

According to another embodiment, the copolymer (A) may include structural units (a-1), (a-3) and (a-4).

According to another embodiment, the copolymer (A) may comprise structural units (a-1), (a-2) and (a-3).

According to another embodiment, the copolymer (A) may include structural units (a-1), (a-2), (a-3) and (a-4).

The copolymer (A) is an alkaline-soluble resin for development and can also serve as a base material for forming a film during coating and a structure for forming a final pattern. (a-1) Structural units derived from ethylenically unsaturated carboxylic acids, ethylenically unsaturated carboxylic anhydrides or combinations thereof

The structural unit (a-1) is derived from an ethylenically unsaturated carboxylic acid, an ethylenically unsaturated carboxylic anhydride or a combination thereof. The ethylenically unsaturated carboxylic acid and the ethylenically unsaturated carboxylic anhydride are polymerizable unsaturated monomers containing at least one carboxyl group in the molecule. Specific examples thereof may include unsaturated monocarboxylic acids such as (meth) acrylic acid, crotonic acid, α-chloroacrylic acid, and cinnamic acid; unsaturated dicarboxylic acids and anhydrides thereof such as maleic acid, maleic anhydride, fumaric acid, itaconic acid, itaconic anhydride, liconic acid, liconic anhydride, and mesaconic acid; trivalent or higher valent unsaturated polycarboxylic acids and anhydrides thereof; and mono[(meth)acryloyloxyalkyl]esters of divalent or higher valent polycarboxylic acids such as mono[2-(meth)acryloyloxyethyl]succinate, mono[2-(meth)acryloyloxyethyl]phthalate, etc. The structural units derived from the above exemplary compounds may be contained in the copolymer alone or in combination of two or more.

The amount of the structural unit (a-1) may be 5 to 65 mol%, or 10 to 50 mol%, based on the total mole of the structural units constituting the copolymer (A). Within the above range, it may have favorable developing properties. (a-2) Structural units derived from an ethylenically unsaturated compound containing an aromatic ring

The structural unit (a-2) is derived from an ethylenically unsaturated compound containing an aromatic ring. Specific examples of the ethylenically unsaturated compound containing an aromatic ring may include phenyl (meth)acrylate, benzyl (meth)acrylate, 2-phenoxyethyl (meth)acrylate, phenoxydiethylene glycol (meth)acrylate, p-nonylphenoxypolyethylene glycol (meth)acrylate, p-nonylphenoxypolypropylene glycol (meth)acrylate, tribromophenyl (meth)acrylate; styrene; styrene containing an alkyl substituent such as methylstyrene, dimethylstyrene, trimethylstyrene, ethylstyrene, diethylstyrene, triethylstyrene, propylstyrene, butylstyrene, Hexylstyrene, heptylstyrene and octylstyrene; halogen-containing styrenes such as fluorostyrene, chlorostyrene, bromostyrene and iodostyrene; alkoxy-substituent-containing styrenes such as methoxystyrene, ethoxystyrene and propoxystyrene; 4-hydroxystyrene, p-hydroxy-α-methylstyrene, acetylstyrene; and vinyltoluene, divinylbenzene, vinylphenol, o-vinylbenzyl methyl ether, m-vinylbenzyl methyl ether, p-vinylbenzyl methyl ether, o-vinylbenzyl glycidyl ether, m-vinylbenzyl glycidyl ether, p-vinylbenzyl glycidyl ether, etc. The structural units derived from the above exemplary compounds may be contained in the copolymer alone or in combination of two or more. For the polymerizability of the composition, the structural units derived from styrene compounds are preferred among the examples.

The amount of the structural unit (a-2) may be 1 to 50 mol%, or 3 to 40 mol%, based on the total mole of the structural units constituting the copolymer (A). Within the above range, it may be more advantageous in terms of chemical resistance. (a-3) Structural units derived from an ethylenically unsaturated compound containing an epoxy group

The structural unit (a-3) is derived from an ethylenically unsaturated compound containing an epoxy group. Specific examples of the ethylenically unsaturated compound containing an epoxy group may include glycidyl (meth)acrylate, 3,4-epoxybutyl (meth)acrylate, 4,5-epoxypentyl (meth)acrylate, 5,6-epoxyhexyl (meth)acrylate, 6,7-epoxyheptyl (meth)acrylate, 2,3-epoxycyclopentyl (meth)acrylate, 3,4-epoxycyclohexyl (meth)acrylate, α-ethyl glycidyl ... α-n-propyl glycidyl acrylate, α-n-butyl glycidyl acrylate, N-(4-(2,3-epoxypropoxy)-3,5-dimethylbenzyl) acrylamide, N-(4-(2,3-epoxypropoxy)-3,5-dimethylphenylpropyl) acrylamide, 4-hydroxybutyl (meth) acrylate glycidyl ether, 4-hydroxybutyl acrylate glycidyl ether, allyl glycidyl ether, 2-methylallyl glycidyl ether, etc. The structural units derived from the above exemplary compounds may be included in the copolymer alone or in combination of two or more. From the viewpoint of enhancement of copolymerizability and cured film strength, at least one selected from structural units derived from glycidyl (meth)acrylate, 4-hydroxybutyl acrylate glycidyl ether and 4-hydroxybutyl (meth)acrylate glycidyl ether among the above is more preferred.

The amount of the structural unit (a-3) may be 1 to 40 mol%, or 5 to 20 mol%, based on the total mole of the structural units constituting the copolymer (A). Within the above range, it may be more advantageous in terms of residues during the process and margin during prebaking. (a-4) Structural units derived from ethylenically unsaturated compounds other than (a-1), (a-2) and (a-3)

The copolymer (A) used in the present invention may further contain a structural unit derived from an ethylenically unsaturated compound other than (a-1), (a-2) and (a-3) in addition to (a-1), (a-2) and (a-3).

Specific examples of the structural unit derived from an ethylenically unsaturated compound other than the structural units (a-1), (a-2) and (a-3) may include unsaturated carboxylic acid esters such as methyl (meth)acrylate, ethyl (meth)acrylate, butyl (meth)acrylate, dimethylaminoethyl (meth)acrylate, isobutyl (meth)acrylate, tertiary butyl (meth)acrylate, cyclohexyl (meth)acrylate, ethylhexyl (meth)acrylate, tetrahydrofurfuryl (meth)acrylate, hydroxyethyl (meth)acrylate, (meth)acrylate, 2-Hydroxypropyl (meth)acrylate, 2-Hydroxy-3-chloropropyl (meth)acrylate, 4-Hydroxybutyl (meth)acrylate, Glycerol (meth)acrylate, Methyl α-hydroxymethacrylate, Ethyl α-hydroxymethacrylate, Propyl α-hydroxymethacrylate, Butyl α-hydroxymethacrylate, 2-Methoxyethyl (meth)acrylate, 3-Methoxybutyl (meth)acrylate, Ethoxydiethylene glycol (meth)acrylate, Methoxytriethylene glycol (Meth)acrylate, methoxytripropylene glycol (meth)acrylate, poly(ethylene glycol) methyl ether (meth)acrylate, trifluoroethyl (meth)acrylate, trifluoro(meth)acrylate, tetrafluoropropyl (meth)acrylate, hexafluoroisopropyl (meth)acrylate, octafluoropentyl (meth)acrylate, heptadecafluorodecyl (meth)acrylate, isobornyl (meth)acrylate, dicyclopentyl (meth)acrylate, dicyclopentenyl (meth)acrylate , dicyclopentyloxyethyl (meth)acrylate, and dicyclopentenyloxyethyl (meth)acrylate; N-vinyl-containing tertiary amines such as N-vinylpyrrolidone, N-vinylcarbazole, and N-vinylthiophene; unsaturated ethers such as vinyl methyl ether and vinyl ethyl ether; unsaturated imides such as N-phenylmaleimide, N-(4-chlorophenyl)maleimide, N-(4-hydroxyphenyl)maleimide, N-cyclohexylmaleimide, etc. The structural units derived from the above exemplary compounds may be contained in the copolymer alone or in combination of two or more.

In addition, according to the embodiment, the structural unit (a-4) may contain a fluorine-containing compound. For example, it may contain at least one selected from trifluoroethyl (meth)acrylate, hexafluoroisopropyl (meth)acrylate, and octafluoropentyl (meth)acrylate.

The amount of the structural unit (a-4) may be greater than 0 to 80 mol%, or 30 to 70 mol%, based on the total mol of the structural units constituting the copolymer (A). Within the above range, the storage stability of the photosensitive resin composition can be maintained, and the film retention rate can be more advantageously enhanced.

According to embodiments, examples of the copolymer having structural units (a-1) to (a-4) may include a copolymer of (meth)acrylic acid/styrene/methyl (meth)acrylate/glycidyl (meth)acrylate, a copolymer of (meth)acrylic acid/styrene/methyl (meth)acrylate/glycidyl (meth)acrylate/N-phenylmaleimide, a copolymer of (meth)acrylic acid/styrene/methyl (meth)acrylate/glycidyl (meth)acrylate/N-cyclohexylmaleimide, a copolymer of (meth)acrylic acid/styrene/n-butyl (meth)acrylate/glycidyl (meth)acrylate/N-phenylmaleimide, a copolymer of (meth)acrylic acid/styrene/glycidyl (meth)acrylate/N-phenylmaleimide, a copolymer of (meth)acrylic acid/styrene/glycidyl (meth)acrylate/N-phenylmaleimide, a copolymer of (meth)acrylic acid/styrene/4-hydroxybutyl acrylate glycidyl ether/N-phenylmaleimide, and the like. One, two or more of the copolymers may be contained in the photosensitive resin composition.

According to embodiments, examples of the copolymer having structural units (a-1) to (a-4) may include a copolymer of (meth)acrylic acid/methyl (meth)acrylate/trifluoro(meth)acrylate/butyl (meth)acrylate, a copolymer of (meth)acrylic acid/methyl (meth)acrylate/trifluoroethyl (meth)acrylate/butyl (meth)acrylate, a copolymer of (meth)acrylic acid/methyl (meth)acrylate/hexafluoroisopropyl (meth)acrylate/butyl (meth)acrylate, and a copolymer of (meth)acrylic acid/methyl (meth)acrylate/octafluoropentyl (meth)acrylate/butyl (meth)acrylate.

The weight average molecular weight of the copolymer (A) may be 4,000 to 20,000 Da or 6,000 to 15,000 Da. If the weight average molecular weight of the copolymer (A) is within the above range, the step difference generated by the lower pattern may be advantageously improved, and the pattern profile at the time of development may be advantageous.

The amount of copolymer (A) in the entire photosensitive resin composition may be 5 to 50 wt %, or 10 to 40 wt %, based on the total weight of the solid content of the photosensitive resin composition (i.e., excluding the weight of the solvent). Within the above range, the pattern profile at the time of development may be favorable, and characteristics such as film retention and chemical resistance may be enhanced.

The copolymer (A) can be prepared by charging a radical polymerization initiator, a solvent, and at least two of the structural units (a-1), (a-2), (a-3) and (a-4) into a reactor, then charging nitrogen therein and slowly stirring the mixture for polymerization.

The radical polymerization initiator may be an azo compound such as 2,2'-azobisisobutyronitrile, 2,2'-azobis(2,4-dimethylvaleronitrile) and 2,2'-azobis(4-methoxy-2,4-dimethylvaleronitrile); or benzoyl peroxide, lauryl peroxide, tert-butyl peroxypivalate, 1,1-bis(tert-butylperoxy)cyclohexane, etc., but it is not limited thereto. The radical polymerization initiator may be used alone or in combination of two or more.

The solvent may be any conventional solvent commonly used in the preparation of the copolymer (A) and may include, for example, propylene glycol monomethyl ether acetate (PGMEA). (B) Photopolymerizable Compound

The photopolymerizable compound (B) used in the present invention may be a monofunctional or polyfunctional ester compound having at least one ethylenically unsaturated double bond. In particular, from the viewpoint of chemical resistance, it may be a polyfunctional compound having at least two functional groups.

The photopolymerizable compound (B) may be selected from the group consisting of dipentatriol hexaacrylate, di(trihydroxymethylpropane) tetraacrylate, ethylene glycol di(meth)acrylate, propylene glycol di(meth)acrylate, diethylene glycol di(meth)acrylate, triethylene glycol di(meth)acrylate, 1,6-hexanediol di(meth)acrylate, polyethylene glycol di(meth)acrylate, polypropylene glycol di(meth)acrylate, glycerol tri(meth)acrylate, trihydroxymethylpropane tri(meth)acrylate, pentaerythritol tri(meth)acrylate, pentaerythritol tri(meth)acrylate, ) acrylate and monoester of succinic acid, pentaerythritol tetra(meth)acrylate, dipentaerythritol penta(meth)acrylate, dipentaerythritol hexa(meth)acrylate, dipentaerythritol penta(meth)acrylate and monoester of succinic acid, pentaerythritol triacrylate-hexamethylene diisocyanate (reaction product of pentaerythritol triacrylate and hexamethylene diisocyanate), tripentaerythritol hepta(meth)acrylate, tripentaerythritol octa(meth)acrylate, bisphenol A epoxy acrylate, ethylene glycol monomethyl ether acrylate and mixtures thereof, but it is not limited thereto.

Examples of commercially available photopolymerizable compounds may include (i) monofunctional (meth)acrylates such as Aronix M-101, M-111, and M-114 manufactured by Toagosei Co., Ltd., KAYARAD T4-110S, T-1420, and T4-120S manufactured by Nippon Kayaku Co., Ltd., and V-158 and V-2311 manufactured by Osaka Yuki Kagaku Kogyo Co., Ltd.; (ii) difunctional (meth)acrylates such as Aronix M-210, M-240, and M-6200 manufactured by Toagosei Co., Ltd., KAYARAD T4-110S, T-1420, and T4-120S manufactured by Nippon Kayaku Co., Ltd., and V-158 and V-2311 manufactured by Osaka Yuki Kagaku Kogyo Co., Ltd. HDDA, HX-220 and R-604, and V-260, V-312 and V-335 HP manufactured by Yuki Kayaku Kogyo Co., Ltd. in Osaka; and (iii) trifunctional and higher functional (meth)acrylates such as Aronix M-309, M-400, M-403, M-405, M-450, M-7100, M-8030, M-8060 and TO-1382 manufactured by Toagosei Co., Ltd., KAYARAD TMPTA, DPHA and DPHA-40H manufactured by Nippon Kayaku Co., Ltd., and V-295, V-300, V-360, V-GPT, V-3PA, V-400 and V-802 manufactured by Yuki Kayaku Kogyo Co., Ltd. in Osaka.

The amount of the photopolymerizable compound (B) may be 10 to 200 parts by weight, 10 to 150 parts by weight, 15 to 100 parts by weight, or 15 to 90 parts by weight based on 100 parts by weight of the copolymer (A) based on the solid content (excluding the solvent). If the amount of the photopolymerizable compound is within the above range, pattern development and coating characteristics may be excellent while the film retention rate remains constant. If the amount of the photopolymerizable compound is less than the above range, the development time becomes longer, which may affect the process and residues. If it exceeds the above range, it may cause a problem that the pattern resolution becomes too high. (C) Photopolymerization Initiator

The photopolymerization initiator (C) used in the present invention may be any known photopolymerization initiator.

The photopolymerization initiator (C) may be selected from the group consisting of acetophenone-based compounds, non-imidazole-based compounds, trioxane-based compounds, onium salt-based compounds, benzoin-based compounds, benzophenone-based compounds, polynuclear quinone-based compounds, thiophenone-based compounds, diazo-based compounds, imidosulfonate-based compounds, oxime-based compounds, carbazole-based compounds, borate-based compounds, ketone-based compounds, and mixtures thereof.

Specifically, an oxime-based compound, a trioxime-based compound, or a combination thereof may be used as the photopolymerization initiator (C). More specifically, a combination of an oxime-based compound and a trioxime-based compound may be used.

Specific examples of the photopolymerization initiator (C) may include 2,2'-azobis(2,4-dimethylvaleronitrile), 2,2'-azobis(4-methoxy-2,4-dimethylvaleronitrile), benzoyl peroxide, lauryl peroxide, tert-butyl peroxypivalate, 1,1-bis(tert-butylperoxy)cyclohexane, p-dimethylaminoacetophenone, 2-benzyl-2-(dimethylamino)-1-[4-(4-phenoxy)phenyl]-1-yl]-2-[[[[[[[[[[[[[[[[[[[[[[[[[[[[[[[[[[[[[ [2-(trichloromethyl)-6-(p-methoxyphenyl)-s-triazine]-1-butanone, 2-hydroxy-2-methyl-1-phenyl-propan-1-one, benzyl dimethyl ketal, benzophenone, benzoin propyl ether, diethylthiocarbamate, 2,4-bis(trichloromethyl)-6-p-methoxyphenyl-s-triazine, 2-trichloromethyl-5-phenylvinyl-1,3,4-oxadiazole, 9-phenylacridine, 3-methyl-5-amino-(s-triazine-2 -yl)amino)-3-phenylcoumarin, 2-(o-chlorophenyl)-4,5-diphenylimidazolyl dimer, 1-phenyl-1,2-propanedione-2-(o-ethoxycarbonyl)oxime, 1-[4-(phenylthio)phenyl]-octane-1,2-dione-2-(o-benzoyl)oxime, o-benzoyl-4'-(benzoyl)benzoyl-hexyl-ketone oxime, 2,4,6-trimethylphenylcarbonyl The present invention also includes but is not limited to diphenylphosphinoyl oxide, hexafluorophosphinoyl-trialkylphenylphosphine salt, 2-phenylbenzimidazole, 2,2'-benzothiazolyl disulfide, 2-(4-phenylvinylphenyl)-4,6-bis(trichloromethyl)-1,3,5-triazine, 2-dimethylamino-2-(4-methylbenzyl)-1-(4-oxo-4-ylphenyl)-butane-1-one, and mixtures thereof.

For reference, examples of commercially available oxime-based photopolymerization initiators include OXE-01 (BASF), OXE-02 (BASF), OXE-03 (BASF), N-1919 (ADEKA), NCI-930 (ADEKA), NCI-831 (ADEKA), and SPI-03 (Samyang). Examples of tris-based photoinitiators include 2-[4-(2-phenylvinyl)phenyl]-4,6-bis(trichloromethyl)-1,3,5-tris-(tris-Y, Tronly), and the like.

The photopolymerization initiator (C) may be used in an amount of 0.1 to 10 parts by weight, 0.1 to 8 parts by weight, 0.5 to 8 parts by weight, or 0.5 to 6 parts by weight based on 100 parts by weight of the copolymer (A) based on the solid content (excluding the solvent).

Specifically, based on 100 parts by weight of the copolymer (A), an oxime-based compound in an amount of 0.05 to 4 parts by weight and/or a trioxane-based compound in an amount of 0.05 to 2 parts by weight may be used as a photopolymerization initiator.

More specifically, based on 100 parts by weight of the copolymer (A), an oxime-based compound in an amount of 0.05 to 3.5 parts by weight and/or a trioxane-based compound in an amount of 0.05 to 1.5 parts by weight can be used as a photopolymerization initiator. If the oxime-based compound is used in an amount within the above range, the developing and coating characteristics can be enhanced together with high sensitivity. In addition, if the trioxane-based compound is used in an amount within the above range, a cured film having excellent chemical resistance and a tapered angle after patterning together with high sensitivity can be obtained. (D) Coloring Agent

The photosensitive resin composition of the present invention may contain a colorant (D) to impart light-shielding properties thereto. The colorant (D) may contain a black colorant.

The black colorant may include at least one selected from the group consisting of a black organic colorant and a black inorganic colorant. Specifically, the colorant (D) may include a mixture of a black organic colorant and a black inorganic colorant. In addition, the colorant (D) may include only a black organic colorant or only a black inorganic colorant.

Furthermore, the colorant (D) may contain a colorant other than the black colorant.

Specifically, the colorant (D) may include a black organic colorant and a colorant other than a black pigment. Alternatively, the colorant (D) may include a black inorganic colorant and a colorant other than a black pigment. Alternatively, the colorant (D) may include a black organic colorant, a black inorganic colorant, and a colorant other than a black pigment. It is preferred that the colorant (D) has high color development and high heat resistance.

According to an embodiment, the colorant (D) may include a black inorganic colorant and a black organic colorant in a weight ratio of 1 to 50:50 to 99.

According to an embodiment, the colorant (D) may include a black organic colorant and a colorant other than a black pigment in a weight ratio of 60 to 90:10 to 40.

According to an embodiment, the colorant (D) may include a black inorganic colorant and a colorant other than a black pigment in a weight ratio of 1 to 40:60 to 99.

According to an embodiment, the colorant (D) may include a black inorganic colorant, a black organic colorant, and a colorant other than a black pigment in a weight ratio of 1 to 50:30 to 80:5 to 40.

A specific example of the black organic coloring agent may be at least one black organic coloring agent selected from the group consisting of aniline black, lactamide black and perylene black. Specifically, BK-7539 (TOKUSHIKI Co., Ltd.) containing organic black may be used. In this case, low reflectivity, high light shielding properties, optical density, dielectric constant, etc. may be improved.

Specifically, black organic colorants can reduce the energy band gap. The smaller the energy band gap, the lower the degree of light reflection. In addition, black organic colorants can absorb all wavelength ranges within the visible range, which is beneficial for minimizing reflectivity.

Any black inorganic colorant known in the art and any colorant other than black pigments may be used. For example, any compound classified as a pigment in the Color Index (published by the Society of Dyers and Colourists) and any dye known in the art may be used.

Specific examples of black inorganic colorants may include carbon black, titanium black, metal oxides such as Cu-Fe-Mn based oxides, and synthetic iron black, etc.

The black organic colorant may be used in an amount of 20 to 100 wt % or 40 to 100 wt % based on the total weight of the solid content of the colorant (D) (i.e., excluding the weight of the solvent). If the amount of the black organic colorant is within the above range, the pattern profile at the time of development may be favorable, and characteristics such as film retention rate may be enhanced. However, if the amount of the black organic colorant is less than 20 wt % based on the total weight of the solid content of the colorant (D), the optical density and low reflectivity desired in the present invention may not be obtained.

In addition, the black organic colorant may be used in an amount of 3 to 40 parts by weight or 5 to 30 parts by weight based on 100 parts by weight of the copolymer (A) based on the solid content (excluding the solvent). If the amount of the black organic colorant is within the above range, the pattern profile at the time of development may be favorable, and characteristics such as film retention rate may be enhanced.

According to the embodiment, the black inorganic colorant can be used in an amount of 0 to 20 wt % or 0 to 10 wt %, particularly 0.01 to 20 wt % or 0.01 to 10 wt %, based on the total weight of the solid content of the colorant (D) (i.e., excluding the weight of the solvent). If the amount of the black inorganic colorant is too much, the optical density and low reflectivity desired in the present invention may not be obtained.

In addition, the black inorganic colorant may be used in an amount of 0.01 to 10 parts by weight or 0.02 to 5 parts by weight based on 100 parts by weight of the copolymer (A) based on the solid content (excluding the solvent). If the amount of the black inorganic colorant is within the above range, the pattern profile at the time of development may be favorable, and characteristics such as film retention rate may be enhanced.

Specific examples of coloring agents other than black pigments may include C.I. pigment violet 13, 14, 19, 23, 25, 27, 29, 32, 33, 36, 37 and 38; and C.I. pigment blue 15 (15: 3, 15: 4, 15: 6, etc.), 16, 21, 28, 60, 64 and 76. Specifically, the coloring agent other than black pigment may include at least one coloring agent selected from the following group, the group consisting of: blue coloring agent and purple coloring agent. From the perspective of reducing reflectivity, C.I. pigment blue 15: 6 and 60, or C.I. pigment violet 23 are preferred among them.

According to the implementation mode, the blue colorant can be used in an amount of 0 to 50 wt % or 0 to 40 wt %, in particular 0.01 to 50 wt % or 0.01 to 40 wt %, based on the total weight of the solid content of the colorant (D) (i.e., excluding the weight of the solvent).

In addition, the violet colorant may be used in an amount of 0 to 50 wt % or 0 to 40 wt %, particularly 0.01 to 50 wt % or 0.01 to 40 wt %, based on the total weight of the solid content of the colorant (D) (ie, excluding the weight of the solvent).

In addition, the blue coloring agent may be used in an amount of 0.01 to 10 parts by weight or 0.01 to 8 parts by weight based on 100 parts by weight of the copolymer (A) based on the solid content (excluding the solvent).

Meanwhile, the violet colorant may be used in an amount of 0.01 to 10 parts by weight or 0.01 to 8 parts by weight based on 100 parts by weight of the copolymer (A) based on the solid content (excluding the solvent).

If the amount of the blue colorant and the purple colorant is within the above range, the pattern profile at the time of development may be favorable, characteristics such as film retention and optical density may be enhanced, and the desired total reflectivity may be achieved. However, if the amount of the blue colorant and the purple colorant exceeds the above respective ranges, the desired optical density and low reflectivity in the present invention may not be obtained.

The colorant (D) may be used in an amount of 1 to 40 parts by weight or 2 to 30 parts by weight based on 100 parts by weight of the copolymer (A) based on the solid content (excluding the solvent). If the amount of the colorant (D) is within the above range, the pattern profile at the time of development may be favorable, and characteristics such as film retention rate may be enhanced. If the amount of the colorant (D) exceeds the above range, the optical density and low reflectivity desired in the present invention may not be obtained.

The coloring agent (D) used in the present invention may be used in a mixed form with a dispersant, a dispersing resin (or a binder), a solvent, etc. so as to disperse the coloring agent in the photosensitive resin composition.

Examples of dispersants may include any known dispersants for colorants. Specific examples thereof may include cationic surfactants, anionic surfactants, nonionic surfactants, amphoteric surfactants, silicon-based surfactants, fluorine-based surfactants, etc. Commercially available dispersants may include Disperbyk-182, -183, -184, -185, -2000, -2150, -2155, -2163, and -2164 from BYK Co. They may be used alone or in combination of two or more thereof. The dispersant may be pre-added to the colorant by surface treating the colorant with it or added together with the colorant when preparing the photosensitive resin composition.

In addition, the coloring agent (D) may be mixed with a dispersing resin, which may then be used in the preparation of a photosensitive resin composition. In this case, the dispersing resin used may be the copolymer (A), a known copolymer, or a mixture thereof.

That is, the coloring agent (D) may be in the form of a coloring dispersion.

The coloring dispersion can be prepared by mixing the coloring agent (D), the dispersing resin and the dispersant at the same time and then grinding them. Alternatively, it can be prepared by pre-mixing the coloring agent (D) and the dispersant as described above, then mixing them with the dispersing resin and grinding them. Here, grinding is performed until the average diameter of the raw material of the coloring dispersion becomes 50 to 250 nm, 50 to 150 nm or 50 to 110 nm. Within the above range, a multilayer structure is not formed in the coloring dispersion, thereby obtaining a more uniform coloring dispersion.

The coloring dispersion of the present invention may be used in an amount of 20 to 70 wt % or 30 to 60 wt % based on the total weight of the solid content of the photosensitive resin composition.

The structure for quantum dot barrier ribs obtained from the photosensitive resin composition containing the coloring agent (D) may be a multi-layered cured film including two or more cured films and may have a total thickness of 6 μm or more. In addition, the structure for quantum dot barrier ribs may achieve an optical density of 0.05/μm to 2.0/μm. In addition, at a wavelength of 360 nm to 740 nm or 550 nm, the reflectivity _RSCI measured by the SCI (including the specular reflection component) method may be 5.0% or less, 4.8% or less, 4.6% or less, 4.0% to 4.8%, or 4.0% to 4.6%, and the reflectivity _RSCE measured by the SCE (excluding the specular reflection component) method may be 0.5% or less, 0.4% or less, 0.1% to 0.5%, 0.1% to 0.4%, or 0.2% to 0.4%. In addition, the ratio between _RSCI and _RSCE (i.e., _RSCE / _RSCI ) may be 2 to 10, 2 to 9, 2 to 8, 3 to 8, 4 to 8, or 4 to 7.5. Within the above range, the characteristics of low reflectivity and high light shielding characteristics can be satisfied, and light leakage of red, green, etc. can be prevented. If any of _RSCI , _RSCE , and _RSCE / _RSCI is outside the above range, the characteristics of low reflectivity and high light shielding properties may not be satisfied at the same time. (E) Surfactant

The photosensitive resin composition of the present invention may further contain a surfactant (E) in order to enhance coating properties and prevent the generation of defects.

Although the kind of the surfactant (E) is not particularly limited, for example, a fluorine-based surfactant or a silicon-based surfactant can be used.

Commercially available silicon-based surfactants may include DC3PA, DC7PA, SH11PA, SH21PA, and SH8400 from Dow Corning Toray Silicone, TSF-4440, TSF-4300, TSF-4445, TSF-4446, TSF-4460, and TSF-4452 from GE Toshiba Silicone, BYK-333, BYK-307, BYK-3560, BYK UV-3535, BYK-361N, BYK-354, and BYK-399 from BYK, etc. They may be used alone or in combination of two or more thereof.

Commercially available fluorine-based surfactants may include Megaface F-470, F-471, F-475, F-482, F-489, and F-563 from Dainippon Ink Kagaku Kogyo Co. (DIC).

From the perspective of the coating properties of the composition, preferred among the surfactants may be BYK-333 and BYK-307 from Becker and F-563 from DIC.

The surfactant (E) may be used in an amount of 0.01 to 5 parts by weight, 0.1 to 3 parts by weight, or 0.1 to 1 part by weight, based on 100 parts by weight of the copolymer (A) based on the solid content (excluding the solvent). If the amount of the surfactant is within the above range, the photosensitive resin composition can be smoothly coated. (F) Additives

In addition, the photosensitive resin composition of the present invention may further comprise at least one additive selected from the group consisting of an epoxy compound, a photobase generator, a thiol compound, and a compound derived from an epoxy resin, as long as the physical properties of the photosensitive resin composition are not adversely affected.

The epoxy compound may be an unsaturated monomer containing at least one epoxy group, or a homo-oligomer or hetero-oligomer thereof. Examples of the unsaturated monomer containing at least one epoxy group may include glycidyl (meth)acrylate, 4-hydroxybutyl acrylate glycidyl ether, 3,4-epoxybutyl (meth)acrylate, 4,5-epoxypentyl (meth)acrylate, 5,6-epoxyhexyl (meth)acrylate, 6,7-epoxyheptyl (meth)acrylate, 2,3-epoxycyclopentyl (meth)acrylate, 3,4-epoxycyclohexyl (meth)acrylate, α-ethyl glycidyl acrylate, and 1,2-dihydro-1,2-dihydro-1,2-dihydro-1,2-dihydro-1,2-dihydro-1,2-dihydro-1,2-dihydro-1,2-dihydro-1,2-dihydro-1,2-dihydro-1,2-dihydro-1,2-dihydro-1,2-dihydro-1,2-dihydro-1,2-dihydro-1,2-dihydro-1,2-dihydro-1,2-dihydro-1,2-dihydro-1,2-dihydro-1,2-dihydro-1,2-dihydro-1,2-dihydro-1,2-dihydro-1,2-dihydro-1,2-dihydro-1,2-dihydro-1,2-dihydro-1,2-dihydro-1,2-dihydro-1 Glycidyl acrylate, α-n-propyl glycidyl acrylate, α-n-butyl glycidyl acrylate, N-(4-(2,3-epoxypropoxy)-3,5-dimethylbenzyl)acrylamide, N-(4-(2,3-epoxypropoxy)-3,5-dimethylphenylpropyl)acrylamide, allyl glycidyl ether, 2-methylallyl glycidyl ether, o-vinylbenzyl glycidyl ether, m-vinylbenzyl glycidyl ether, p-vinylbenzyl glycidyl ether, or a mixture thereof. Specifically, glycidyl (meth)acrylate can be used.

Examples of commercially available homo-oligomers of unsaturated monomers containing at least one epoxy group may include MIPHOTO GHP-03HHP (glycidyl methacrylate, Miwon Commercial Co., Ltd.).

The epoxy compound may further include the following structural units.

Specific examples include structural units derived from: styrene; styrenes containing alkyl substituents, such as methylstyrene, dimethylstyrene, trimethylstyrene, ethylstyrene, diethylstyrene, triethylstyrene, propylstyrene, butylstyrene, hexylstyrene, heptylstyrene and octylstyrene; styrenes containing halogens, such as fluorostyrene, chlorostyrene, bromostyrene and iodostyrene; styrenes containing alkoxy substituents, such as methoxystyrene, ethoxystyrene and propoxystyrene; p-hydroxy-α-methylstyrene, acetylstyrene; ethylenically unsaturated compounds containing aromatic rings, such as divinylbenzene, vinylphenol, o-vinylbenzyl methyl ether, m-vinyl benzyl methyl ether, p-vinyl benzyl methyl ether; unsaturated carboxylic acid esters, such as methyl (meth)acrylate, ethyl (meth)acrylate, butyl (meth)acrylate, dimethylaminoethyl (meth)acrylate, isobutyl (meth)acrylate, tertiary butyl (meth)acrylate, cyclohexyl (meth)acrylate, ethylhexyl (meth)acrylate, tetrahydrofurfuryl (meth)acrylate, hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 2-hydroxy-3-chloropropyl (meth)acrylate, 4-hydroxybutyl (meth)acrylate, glyceryl (meth)acrylate, methyl α-hydroxymethacrylate, ethyl α-hydroxymethacrylate, propyl α-hydroxymethacrylate, α-Butyl methacrylate, 2-methoxyethyl (meth)acrylate, 3-methoxybutyl (meth)acrylate, ethoxydiethylene glycol (meth)acrylate, methoxytriethylene glycol (meth)acrylate, methoxytripropylene glycol (meth)acrylate, poly(ethylene glycol) methyl ether (meth)acrylate, phenyl (meth)acrylate, benzyl (meth)acrylate, 2-phenoxyethyl (meth)acrylate, phenoxydiethylene glycol (meth)acrylate, p-nonylphenoxypolyethylene glycol (meth)acrylate, p-nonylphenoxypolypropylene glycol (meth)acrylate, tetrafluoropropyl (meth)acrylate, 1,1,1,3,3,3-hexafluoro (meth)acrylate Isopropyl (meth)acrylate, octafluoropentyl (meth)acrylate, heptadecafluorodecyl (meth)acrylate, tribromophenyl (meth)acrylate, isobornyl (meth)acrylate, dicyclopentyl (meth)acrylate, dicyclopentenyl (meth)acrylate, dicyclopentyloxyethyl (meth)acrylate, and dicyclopentenyloxyethyl (meth)acrylate; tertiary amines containing N-vinyl groups, such as N-vinylpyrrolidone, N-vinylcarbazole, and N-vinylthiophene; unsaturated ethers, such as vinyl methyl ether and vinyl ethyl ether; unsaturated imides, such as N-phenylmaleimide, N-(4-chlorophenyl)maleimide, N-(4-hydroxyphenyl)maleimide, N-cyclohexylmaleimide, etc. The structural units derived from the above exemplary compounds may be contained in the epoxy compound alone or in combination of two or more thereof.

The epoxy compound may have a weight average molecular weight of 100 to 30,000 Da. Specifically, the epoxy compound may have a weight average molecular weight of 100 to 10,000 Da. If the weight average molecular weight of the epoxy compound is 100 Da or more, the hardness of the cured film may be more excellent. If it is 30,000 Da or less, the thickness of the cured film becomes uniform (with a smaller step), which is more suitable for planarization.

The epoxy compound may be used in an amount of 0 to 3 parts by weight, 0.01 to 3 parts by weight, or 0.1 to 1 parts by weight based on 100 parts by weight of the copolymer (A) based on solid content (excluding the solvent). Within the above range, the pattern profile at the time of development may be favorable, and chemical resistance and planarization may be enhanced.

In addition, the photoalkali generator may contain a compound having a property of generating an alkali under irradiation with light (or activation energy rays). For example, it may contain a highly sensitive compound having a photosensitivity range even at a wavelength of 300 nm or more.

The photobase generator may include a crosslinkable compound including a polyamine photobase generator component. Since the present invention includes such a photobase generator, it is possible to cure and form a fine pattern at a low temperature and/or in a short period of time when preparing a cured film. In addition, since the photobase generator generates a base under the irradiation of light (e.g., UV), it is not inhibited by oxygen in the air, so that it can be used to prevent corrosion or degradation of the cured film.

When the photobase generator is exposed to light, the pendant photobase groups of the polyamine photobase generator component cleave or photolyze to provide amine groups. The amine groups can react with the amine-reactive groups of the polyfunctional amine-reactive component to crosslink the (meth)acrylate copolymer component.

According to the embodiment, the photoalkali generators used include WPBG-018 (Wako Pure Chemical Industries, Ltd. (Wako), CAS No. 122831-05-7, 9-anthrylmethyl-N,N-diethylcarbamate), WPBG-027 (CAS No. 1203424-93-4, (E)-1-piperidinyl-3-(2-hydroxyphenyl)-2-propene-1 -ketone), WPBG-266 (CAS No. 1632211-89-2, 1,2-diisopropyl-3-bis(dimethylamino)methylene)guanidinium 2-(3-benzoylphenyl)propionate), WPBG-300 (CAS No. 1801263-71-7, 1,2-dicyclohexyl-4,4,5,5-tetramethylbiguanidinium n-butyltriphenylborate), etc. The photobase generator can be used alone or in combination of two or more thereof.

The photobase generator may be used in an amount of 0 to 10 parts by weight, particularly 0 to 6 parts by weight, and more particularly 0.01 to 5 parts by weight, based on 100 parts by weight of the copolymer (A) based on the solid content (excluding the solvent). Within the above range, the pattern profile at the time of development may be favorable, and the chemical resistance may be excellent.

The thiol-based compound can be used as an additive with free radical or catalytic function. It can increase the photocuring conversion rate by UV irradiation or thermal reaction, and it can increase the epoxide conversion rate by reducing the reaction energy through thermal reaction. The thiol-based compound prevents the free radical from being extinguished by oxygen. It also produces an effect of making the structure denser by increasing the degree of crosslinking through crosslinking with the photopolymerizable compound (B), thereby improving the curing degree even at low temperature.

Examples of thiol-based compounds include compounds having two or more hydroxyl groups in the molecule. For example, it may be an aliphatic thiol compound or an aromatic thiol compound.

Examples of the aliphatic thiol compound may include methanedithiol, 1,2-ethanedithiol, 1,2-propanedithiol, 1,3-propanedithiol, 1,4-butanedithiol, 1,5-pentanedithiol, 1,6-hexanedithiol, 1,2-cyclohexanedithiol, 3,4-dimethoxybutane-1,2-dithiol, 2-methylcyclohexane-2,3-dithiol, 1,2-dialkylpropyl methyl ether, 2,3-dialkylpropyl methyl ether, bis((1,2-dimethylthiol)-1,2-dimethylthiol) and 1,2-dialkylpropyl methyl ether. 2-Alkylethyl) ether, tetrakis(butylmethyl)methane, bis(butylmethyl)sulfide, bis(butylmethyl)disulfide, bis(butylethyl)sulfide, bis(butylethyl)disulfide, bis(butylmethylthio)methane, bis(2-butylethylthio)methane, 1,2-bis(butylmethylthio)ethane, 1,2-bis(2-butylethylthio)ethane, 1,3-bis(butylmethylthio)propane, 1,3-bis(2-butylethylthio) 1,2,3-tris(2-butylethylthio)propane, 1,2,3-tris(3-butylpropylthio)propane, 4-butylmethyl-1,8-dibutyl-3,6-dithiooctane, 5,7-dibutylmethyl-1,11-dibutyl-3,6,9-trithioundecane, 4,7-dibutylmethyl-1,11-dibutyl-3,6,9-trithioundecane, ,8-diphenylmethyl-1,11-diphenyl-3,6,9-trithiaundecane, 1,1,3,3-tetra(phenylmethylthio)propane, 4,6-bis(phenylmethylthio)-1,3-cyclopentane disulfide, 2-(2,2-bis(phenylmethylthio)ethyl)-1,3-disulfide ethane, tetra(phenylmethylthiomethyl)methane, tetra(2-phenylethylthiomethyl)methane, bis(2,3-diphenylpropyl)sulfide, 2, 5-Dibutylmethyl-1,4-disulfide cyclopentane, ethylene glycol bis(2-butyl acetate), ethylene glycol bis(3-butyl propionate), diethylene glycol bis(2-butyl acetate), diethylene glycol bis(3-butyl propionate), 2,3-dibutyl-1-propanol(3-butyl propionate), 3-butyl-1,2-propanediol bis(2-butyl acetate), 3-butyl-1,2-propanediol di(3-butyl propionate), trihydroxymethylpropane tris(2-butyl acetate), di(trihydroxymethylpropane)tetra(2-butyl acetate), tris(3-butyl propionate), di(trihydroxymethylpropane)tetra(3-butyl propionate), tris(2-butyl acetate), tris(3-butyl propionate), pentaerythritol tetra(2-butyl acetate), dipentaerythritol hexa(2-butyl acetate), pentaerythritol di(3-butyl propionate), pentaerythritol tris( 3-Alkylated Propionate), Pentaerythritol Tetrakis(3-Alkylated Propionate) (PETMP), Dipentaerythritol Hexa(3-Alkylated Propionate), Glycerol Di(2-Alkylated Acetate), Glycerol Tri(2-Alkylated Acetate), Glycerol Di(3-Alkylated Propionate), Glycerol Tri(3-Alkylated Propionate), 1,4-Cyclohexanediol Di(2-Alkylated Acetate), 1,4-Cyclohexanediol Di(3-Alkylated Propionate), Hydroxyl Methyl Sulfide Di(2-Alkylated Acetate) Ester), hydroxy methyl sulfide bis(3-butylpropionate), hydroxy ethyl sulfide (2-butyl acetate), hydroxy ethyl sulfide (3-butylpropionate), hydroxy methyl disulfide (2-butyl acetate), hydroxy methyl disulfide (3-butylpropionate), thioglycolic acid bis(2-butylethyl ester), thiodipropionic acid bis(2-butylethyl ester), and N,N',N"-tris(β-butylpropylcarbonyloxyethyl) isocyanurate.

Examples of the aromatic thiol compound may include 1,2-diphenylbenzene, 1,3-diphenylbenzene, 1,4-diphenylbenzene, 1,2-bis(alkylmethyl)benzene, 1,4-bis(alkylmethyl)benzene, 1,2-bis(alkylethyl)benzene, 1,4-bis(alkylethyl)benzene, 1,2,3-triphenylbenzene, 1,2,4-triphenylbenzene, 1,3,5-triphenylbenzene, 1,2,3-tri(alkylmethyl)benzene, 1,2,4-tri(alkylmethyl)benzene, 1,3,5-tri(alkylmethyl)benzene, 1,2,3-tri(alkylethyl)benzene, 1,3,5-tri(alkylethyl)benzene, 1,2,4-tri(alkylethyl)benzene, 2, The present invention also includes the following: 1,5-toluenedithiol, 3,4-toluenedithiol, 1,4-naphthalenedithiol, 1,5-naphthalenedithiol, 2,6-naphthalenedithiol, 2,7-naphthalenedithiol, 1,2,3,4-tetrabutylbenzene, 1,2,3,5-tetrabutylbenzene, 1,2,4,5-tetrabutylbenzene, 1,2,3,4-tetrabutylmethylbenzene, 1,2,3,5-tetrabutylmethylbenzene, 1,2,4,5-tetrabutylmethylbenzene, 1,2,3,4-tetrabutylethylbenzene, 1,2,3,5-tetrabutylethylbenzene, 1,2,4,5-tetrabutylbiphenyl, 2,2'-dibutylbiphenyl, and 4,4'-dibutylbiphenyl.

The thiol-based compound may be an aliphatic thiol compound. Specifically, it may include pentaerythritol tetra(3-pentyl propionate) (PETMP), SIRIUS-501 (SUBARU-501, Osaka Organic Chemicals Co., Ltd.), and glycoluril derivatives (TS-G, SHIKOKU CHEMICALS CORPORATION).

The thiol-based compound may be used in an amount of 0 to 10 parts by weight, 0 to 6 parts by weight, or 0.01 to 5 parts by weight, based on 100 parts by weight of the copolymer (A) based on the solid content (excluding the solvent). If the amount of the thiol-based compound is within the above range, the pattern profile at the time of development may be favorable, and the chemical resistance may be excellent.

The photosensitive resin composition of the present invention may further comprise a compound derived from an epoxy resin. The compound derived from an epoxy resin has at least one double bond, may have a cardo skeleton structure, may be a novolac-based resin, or may be an acrylic resin containing a double bond in its side chain.

The weight average molecular weight (Mw) of the epoxy-derived compound may be in the range of 3,000 to 18,000 Da or 5,000 to 10,000 Da when determined by gel permeation chromatography (referenced to polystyrene). If the molecular weight of the epoxy-derived compound is within the above range, the pattern profile at the time of development may be favorable, and characteristics such as chemical resistance and elastic recovery may be improved.

Specifically, the compound derived from epoxy resin may be a compound having an axonal skeleton structure as represented by the following Formula 1: In the above formula 1, X is each independently , , or ; L ₁ is each independently C _1-10 alkylene, C _3-20 cycloalkylene, or C _1-10 alkyleneoxy; R ₁ to R ₇ are each independently H, C _1-10 alkyl, C _1-10 alkoxy, C _2-10 alkenyl, or C _6-14 aryl; R ₈ is H, methyl, ethyl, CH ₃ CHCl-, CH ₃ CHOH-, CH ₂ =CHCH ₂ -, or phenyl; and n is an integer from 0 to 10.

Specific examples of _C1-10 alkylene groups may include methylene, ethylene, propylene, isopropylene, butylene, isobutylene, dibutylene, tertiary butylene, pentylene, isopentylene, tertiary pentylene, hexylene, heptylene, octylene, isooctylene, tertiary octylene, 2-ethylhexylene, nonylene, isononylene, decylene, isodecylene, etc. Specific examples of _C3-20 cycloalkylene groups may include cyclopropylene, cyclobutylene, cyclopentylene, cyclohexylene, cycloheptylene, decalinylene, adamantane, etc. Specific examples of the _C1-10 alkyleneoxy group may include a methyloxy group, an ethyloxy group, a propyloxy group, a butyloxy group, a dibutyloxy group, a tertiary butyloxy group, a pentyloxy group, a hexyloxy group, a heptyloxy group, an octyloxy group, and a 2-ethyl-hexyloxy group. Specific examples of the _C1-10 alkyl group may include a methyl group, an ethyloxy group, a propyloxy group, a butyloxy group, a dibutyloxy group, a tertiary butyloxy group, a pentyloxy group, a isopentyl group, a tertiary pentyl group, a hexyl group, a heptyl group, an octyl group, an isooctyl group, a tertiary octyl group, a 2-ethylhexyl group, a nonyl group, an isononyl group, a decyl group, an isodecyl group, and the like. Specific examples of the _C1-10 alkoxy group may include a methoxy group, an ethoxy group, a propyloxy group, a butoxy group, a dibutyloxy group, a tertiary butyloxy group, a pentyloxy group, a hexyloxy group, a heptyloxy group, an octyloxy group, and a 2-ethylhexyloxy group. Specific examples of the C _2-10 alkenyl group may include vinyl, allyl, butenyl, propenyl, etc. Specific examples of the C _6-14 aryl group may include phenyl, tolyl, xylyl, naphthyl, etc.

For example, a compound derived from an epoxy resin having an articulated skeleton structure can be prepared by the following synthetic route as represented by Reaction Scheme 1. [Reaction Scheme 1] In the above reaction scheme 1, Hal is a halogen; and X, R ₁ , R ₂ and L ₁ are the same as defined in the above formula 1.

The compound derived from epoxy resin having an articulated skeleton structure can be obtained by reacting an epoxy resin having an articulated skeleton structure with an unsaturated monobasic acid to produce an epoxy adduct and then reacting the epoxy adduct thus obtained with a polyacid anhydride, or further reacting the product thus obtained with a monofunctional or polyfunctional epoxy compound. Any unsaturated monoacid known in the art can be used, such as acrylic acid, methacrylic acid, crotonic acid, cinnamic acid, sorbic acid, etc. Any polyacid anhydride known in the art can be used, such as succinic anhydride, maleic anhydride, trimellitic anhydride, pyromellitic anhydride, 1,2,4,5-cyclohexanetetracarboxylic dianhydride, hexahydrophthalic anhydride, etc. Any monofunctional or polyfunctional epoxy compound known in the art may be used, such as glycidyl methacrylate, methyl glycidyl ether, ethyl glycidyl ether, propyl glycidyl ether, isopropyl glycidyl ether, butyl glycidyl ether, isobutyl glycidyl ether, bisphenol Z glycidyl ether, and the like.

For example, a compound derived from an epoxy resin having an articulated skeleton structure can be prepared by the following synthetic route as represented by Reaction Scheme 2. [Reaction Scheme 2] In the above Reaction Scheme 2, _R9 is each independently H, _C1-10 alkyl, _C1-10 alkoxy, _C2-10 alkenyl, or _C6-14 aryl; _R10 and _R11 are each independently a saturated or unsaturated _C6 aliphatic or aromatic ring; n is an integer from 1 to 10; and X, _R1 , _R2 and _L1 are the same as defined in Formula 1 above.

When a compound derived from an epoxy resin having an articulated skeleton structure is used, the articulated skeleton structure can improve the adhesion between the cured material and the substrate, alkali resistance, processability, strength, etc. In addition, once the uncured portion is removed during development, a high-resolution image can be formed in the pattern.

The compound derived from epoxy resin may be used in an amount of 0 to 50 parts by weight, particularly 0 to 40 parts by weight, more particularly 0.01 to 50 parts by weight, 0.01 to 40 parts by weight, or 0.01 to 30 parts by weight, based on 100 parts by weight of the copolymer (A) based on the solid content (excluding the solvent). If the compound derived from epoxy resin is used within the above amount range, the developability and pattern profile at the time of development may be favorable. (G) Solvent

The photosensitive resin composition of the present invention can be prepared as a liquid composition (in which the above components are mixed with a solvent). Any solvent known in the art (compatible but not reactive with the components in the photosensitive resin composition) can be used as the solvent (G) for preparing the photosensitive resin composition.

Examples of the solvent (G) may include glycol ethers such as ethylene glycol monoethyl ether; ethylene glycol alkyl ether acetates such as ethyl solvent acetate; esters such as ethyl 2-hydroxypropionate; diethylene glycol such as diethylene glycol monomethyl ether; propylene glycol alkyl ether acetates such as propylene glycol monomethyl ether acetate and propylene glycol propyl ether acetate; and acetic acid alkoxyalkyl esters such as 3-methoxybutyl acetate. The solvent (G) may be used alone or in combination of two or more.

The amount of the solvent (G) is not particularly limited, but may be 50 to 200 parts by weight or 80 to 150 parts by weight based on 100 parts by weight of the copolymer (A) based on the solid content (excluding the solvent) from the viewpoint of coating and stability of the finally obtained photosensitive resin composition. If the amount of the solvent is within the above range, the resin composition is coated smoothly, and the margin of delay that may occur during working is small.

In addition, the photosensitive resin composition of the present invention may further contain other additives, such as antioxidants and stabilizers, as long as they do not adversely affect the physical properties of the photosensitive resin composition.

The photosensitive resin composition comprising the above components can be prepared as a liquid composition by a common method. For example, the coloring agent is pre-mixed with a dispersing resin, a dispersant and a solvent and dispersed therein using a bead mill until the average particle size of the coloring agent reaches a desired value, thereby preparing a colored dispersion. In this case, the surfactant and/or the copolymer can be partially or completely blended. Added to the dispersion is the remainder of the copolymer and the surfactant, a photopolymerizable compound and a photopolymerization initiator. Additives such as epoxy compounds or additional solvents (if necessary) are further blended to a certain concentration, and then they are fully stirred to prepare a liquid photosensitive resin composition.

The present invention can provide a structure for quantum dot blocking ribs in the form of a cured film by coating such a photosensitive resin composition on a substrate and curing it. The structure for quantum dot blocking ribs can include a multi-layer cured film of two or more layers.

Specifically, the present invention can provide a structure for quantum dot barrier ribs, the structure comprising a first cured film formed of a first photosensitive resin composition and a second cured film formed of a second photosensitive resin composition on the first cured film,

wherein the first photosensitive resin composition, the second photosensitive resin composition, or both comprise (A) a copolymer; (B) a photopolymerizable compound; (C) a photopolymerization initiator; and (D) a colorant comprising a black colorant, and the structure has a total thickness of 6 µm or greater.

The first photosensitive resin composition and the second photosensitive resin composition may be the same or different.

In addition, according to the embodiment, the first photosensitive resin composition and the second photosensitive resin composition may or may not contain fluorine.

For example, the first photosensitive resin composition may not contain fluorine, and the second photosensitive resin composition may contain fluorine.

In addition, the first photosensitive resin composition and the second photosensitive resin composition may not contain fluorine.

If the first photosensitive resin composition or the second photosensitive resin composition contains fluorine, when preparing the copolymer (A) to be used in the photosensitive resin composition, the structural unit (a-4) may contain a fluorine-containing compound. For example, the structural unit (a-4) may contain at least one selected from the group consisting of trifluoroethyl (meth)acrylate, tetrafluoropropyl (meth)acrylate, pentafluorobenzyl (meth)acrylate, hexafluoroisopropyl (meth)acrylate, heptadecafluoro-1-nonyl (meth)acrylate, octafluoropentyl (meth)acrylate, 4-trifluoromethyl-4-hydroxy-5,5,5-trifluoro-2-pentyl (meth)acrylate, and trimethoxysilylpropyl methacrylate.

Meanwhile, the structure for the quantum dot barrier rib according to the embodiment may be a multi-layered cured film consisting of two layers including a first cured film and a second cured film.

Specifically, the multi-layer cured film may be a two-layer cured film, which includes a first cured film formed by coating a first photosensitive resin composition on a substrate and curing it; and a second cured film formed by coating a second photosensitive resin composition on the first cured film and curing it.

In the multi-layered cured film composed of two layers, the first cured film and the second cured film may have a thickness of 10 μm or less, particularly 4 μm to 9 μm, more particularly 5 μm to 9 μm, respectively. In addition, the multi-layered cured film composed of two layers may have a total thickness of 6 μm to 20 μm, particularly 6 μm to 18 μm, more particularly 10 μm to 18 μm, that is, the total thickness of the first cured film and the second cured film.

According to another embodiment, the structure for the quantum dot barrier rib may be a multi-layered cured film consisting of three layers including a first cured film, a second cured film, and a third cured film.

In the multi-layered cured film composed of three layers, the first cured film, the second cured film, and the third cured film may have a thickness of 8 μm or less, particularly 2 μm to 8 μm, and more particularly 3 μm to 8 μm, respectively. In addition, the multi-layered cured film composed of three layers may have a total thickness of 6 μm to 24 μm, particularly 9 μm to 24 μm, and more particularly 12 μm to 24 μm, that is, the total thickness of the first cured film, the second cured film, and the third cured film.

According to another embodiment, the structure for quantum dot blocking ribs may be a multi-layered cured film consisting of n layers including a first cured film, a second cured film, and an nth cured film. Here, n may be 4 or more, particularly 4 to 10, 4 to 8, 4 to 6, or 4 to 5.

In the multilayered cured film composed of n layers, the first cured film, the second cured film, and the nth cured film may each have a thickness of 8 μm or less, particularly 1.5 μm to 8 μm, and more particularly 2 μm to 8 μm. In addition, the multilayered cured film composed of n layers may have a total thickness of 6 μm to 80 μm, particularly 6 μm to 40 μm, and more particularly 6 μm to 30 μm.

The structure for quantum dot barrier ribs according to the embodiment has a large total film thickness as described above, so that excellent optical density (ie, high light shielding characteristics) and low reflectivity can be achieved even if the amount of colorant is smaller than in the prior art.

In the structure for quantum dot blocking ribs, the thickness and optical density of each cured film of the multi-layer cured film can be the same or different. For example, the thickness of the first cured film can be the same or different from the thickness of the second cured film. In addition, the optical density of the first cured film can be the same or different from the optical density of the second cured film.

The height difference of the cured film is measured by the vertical movement of the probe tip of the equipment using SCAN PLUS, which is an α-step instrument (α-step profiler). The thickness of the cured film is obtained from the result. The thickness of the multi-layer cured film is the initial film thickness. It can refer to the thickness when the multi-layer cured film is formed, that is, the thickness of the film prepared at the time of pre-baking before the exposure and development steps in the preparation of the quantum dot barrier ribs.

In the case where a single-layer cured film is obtained from a photosensitive resin composition, there is a problem that the cured film is applied only in the form of a thin film. In addition, in the case where a single-layer cured film is used for quantum dot barrier ribs, its thickness is thin. Therefore, when a quantum dot solution is dripped, it may overflow the barrier ribs. If it overflows the barrier ribs, stains due to color mixing may be generated, or reliability may be reduced. In addition, if the composition is applied in a single layer thickness and then cured, it is difficult to achieve a uniform cured film, stains may be generated due to thickness variation, or the quantum dot solution may overflow the barrier ribs having a thin thickness. There are certain limitations to use for quantum dot barrier ribs.

However, the multi-layered cured film (or structure for quantum dot blocking ribs) according to the embodiment has a minimum film thickness of 6 µm. In addition, since the coloring agent is applied, when the light of various colors of the quantum dots is emitted, there is an advantage of shielding the light by the blocking ribs. In addition, by adjusting the number and thickness of the layers of each cured film, a multi-layer pattern with a uniform film thickness can be formed. If a fluorine-containing cured film is applied to the final n-th layer, when the quantum dot solution is filled in the inkjet method, the discharged quantum dot solution can be prevented from overflowing into the adjacent area.

The present invention can prepare a structure for quantum dot blocking ribs in the form of a multi-layered cured film by the following method. When forming the structure for quantum dot blocking ribs, a multi-layered pattern having a uniform film thickness suitable for quantum dot blocking ribs can be formed in a single development process.

Specifically, the method for preparing a structure for quantum dot blocking ribs includes coating a first photosensitive resin composition on a substrate and curing it to form a first cured film (S1); coating a second photosensitive resin composition on the first cured film and curing it to form a second cured film (S2); and exposing and developing a multi-layer cured film including the first cured film and the second cured film to form a pattern and then curing it (S3),

The first photosensitive resin composition, the second photosensitive resin composition, or both may include (A) a copolymer; (B) a photopolymerizable compound; (C) a photopolymerization initiator; and (D) a colorant including a black colorant.

More specifically, the method for preparing a structure for quantum dot barrier ribs according to an embodiment may include coating a first photosensitive resin composition on a substrate and curing it to form a first cured film (S1).

In the step of forming the first cured film, the photosensitive resin composition according to the present invention is coated on the pre-treated substrate with a desired thickness (e.g., 4 μm to 8 μm) by spin coating, slit coating, roll coating, screen printing, applicator method, etc., and is cured by removing the solvent therefrom to form the first cured film.

Various inorganic substrates such as a glass substrate, an ITO deposition substrate, a _SiNx deposition substrate, and a _SiONx deposition substrate can be used as the substrate. Any material can be used for the substrate as long as it can be used to form a structure for quantum dot barrier ribs.

The curing for forming the first cured film may be performed at 70° C. to 140° C. for 100 seconds to 800 seconds. The curing may be performed once or divided into two or more times.

When curing is performed once, it can be performed at 70°C to 140°C for 100 seconds to 800 seconds, particularly at 80°C to 130°C for 150 seconds to 600 seconds, particularly at 90°C to 130°C for 150 seconds to 500 seconds.

When curing is performed in two or more times, for example, it can be performed as a pre-bake at 70°C to 100°C for 50 seconds to 400 seconds, particularly at 70°C to 90°C for 100 seconds to 300 seconds, and then as an intermediate bake at 80°C to 140°C for 100 seconds to 500 seconds, particularly at 90°C to 130°C for 100 seconds to 300 seconds.

The method for preparing a structure for quantum dot barrier ribs according to an embodiment may include coating a second photosensitive resin composition on the first cured film and curing it to form a second cured film (S2).

In the step of forming the second cured film, the second photosensitive resin composition is coated on the first cured film obtained in the above step S1 at a desired thickness (eg, 4 to 8 μm), and is cured by removing the solvent therefrom to form the second cured film.

The curing for forming the second cured film may be performed at 70° C. to 140° C. for 100 seconds to 800 seconds. The curing may be performed once or divided into two or more times.

Specifically, when curing is performed once, it can be performed at 70°C to 140°C for 100 seconds to 800 seconds, particularly at 80°C to 130°C for 150 seconds to 600 seconds, more particularly at 90°C to 130°C for 150 seconds to 500 seconds.

When curing is performed in two or more times, for example, it can be performed as a pre-bake at 70°C to 100°C for 50 seconds to 400 seconds, particularly at 70°C to 90°C for 100 seconds to 300 seconds, and then as an intermediate bake at 80°C to 140°C for 100 seconds to 500 seconds, particularly at 90°C to 130°C for 100 seconds to 300 seconds.

The curing conditions for the first cured film and the second cured film may be the same or different.

In the method for preparing a structure for quantum dot blocking ribs according to the embodiment, a multilayer cured film composed of two layers can be exposed and developed. In the case of preparing a cured film having three or more layers, a cured film having one or more layers can be further formed on the second cured film, and then exposed and developed. In this case, the photosensitive resin composition used to prepare the one or more cured films formed on the second cured film can be the same as or different from the photosensitive resin composition used to prepare the first cured film and the second cured film. In addition, the optical density of each cured film can vary depending on the components and content of the photosensitive resin composition used to prepare the first cured film and the second cured film.

The method for preparing a structure for quantum dot barrier ribs according to an embodiment may include exposing and developing a multi-layered cured film including the first cured film and the second cured film to form a pattern and then curing it (S3).

In step S3, in order to form a pattern on the multilayer cured film thus obtained, a mask having a predetermined shape is placed thereon, and then the mask is irradiated with 200 nm to 500 nm of activating rays. A low-pressure mercury lamp, a high-pressure mercury lamp, an ultra-high-pressure mercury lamp, a metal halide lamp, an argon laser, etc. can be used as a light source for irradiation. If necessary, X-rays, electron rays, etc. can also be used. The exposure dose can vary according to the type and composition ratio of the components of the composition and the thickness of the dried coating. If a high-pressure mercury lamp is used, it can be 500 mJ/ ^cm2 or less (at a wavelength of 365 nm).

After the exposure step, an alkaline aqueous solution such as sodium carbonate, sodium hydroxide, potassium hydroxide, tetramethylammonium hydroxide, etc. is used as a developer to dissolve and remove unnecessary parts, whereby only the exposed parts remain to form a pattern. The image pattern obtained by development is cooled to room temperature and post-baked in a hot air circulation type drying oven to obtain a final pattern.

Exposure can be performed by setting a mask so that the interval between each pattern is 10 µm to 30 µm and irradiating activating rays thereon.

Development can be performed for 50 seconds to 300 seconds, particularly 100 seconds to 300 seconds.

Curing after patterning, i.e., post-baking, is performed at 150°C to 300°C for 10 to 60 minutes, particularly at 180°C to 280°C for 20 to 50 minutes, and more particularly at 200°C to 260°C for 20 to 40 minutes.

According to the method for preparing quantum dot barrier ribs according to the embodiment, a multi-layer pattern having a uniform film thickness suitable for quantum dot barrier ribs can be formed in a single development process.

The present invention provides a structure for quantum dot barrier ribs prepared by the method for preparing quantum dot barrier ribs according to the above embodiments.

In the structure for quantum dot barrier ribs according to the embodiment, a pattern is formed at regular intervals as shown in FIGS. 2 to 4. It may be composed of a multilayer having two or more layers.

The structure (200) for quantum dot blocking ribs according to the embodiment may be a multi-layer structure (200) for quantum dot blocking ribs composed of two layers including a first cured film (211) and a second cured film (212) formed on a substrate (210), as shown in FIG. 2 .

Specifically, the structure (200) for quantum dot blocking ribs can be a two-layer structure (200) for quantum dot blocking ribs, which is prepared by exposing and developing two layers of cured films to form a pattern and then baking them, wherein the two layers of cured films include a first cured film (211) formed by coating a first photosensitive resin composition on a substrate (210) and curing it; and a second cured film (212) formed by coating a second photosensitive resin composition on the first cured film (211) and curing it.

According to another embodiment, the structure (300) for quantum dot blocking ribs may be a multi-layer structure (300) for quantum dot blocking ribs composed of three layers including a first cured film (311), a second cured film (312) and a third cured film (313), as shown in FIG. 3 .

Specifically, the structure (300) for quantum dot blocking ribs can be a three-layer structure (300) for quantum dot blocking ribs, which is prepared by exposing and developing a three-layer cured film to form a pattern and then baking it, wherein the three-layer cured film includes a first cured film (311) formed by coating a first photosensitive resin composition on a substrate (310) and curing it; a second cured film (312) formed by coating a second photosensitive resin composition on the first cured film (311) and curing it; and a third cured film (313) formed by coating a third photosensitive resin composition on the second cured film (312) and curing it.

According to another embodiment, the structure (400) for quantum dot blocking ribs may be a multi-layer structure (400) for quantum dot blocking ribs composed of n layers including a first cured film (411), a second cured film (412), a third cured film (413) and an nth cured film (nn), as shown in FIG. 4 .

Specifically, the structure (400) for quantum dot blocking ribs may be an n-layer structure (400) for quantum dot blocking ribs, which is prepared by exposing and developing n-layer cured films to form patterns and then baking them, wherein the n-layer cured films include a first cured film (411) formed by coating a first photosensitive resin composition on a substrate (410) and curing it; A second cured film (412) is formed by coating a second photosensitive resin composition on a first cured film (411) and curing it; a third cured film (413) is formed by coating a third photosensitive resin composition on the second cured film (412) and curing it; and an nth cured film (nn) is formed by coating an nth photosensitive resin composition on the third cured film (413) and curing it. Here, n may be 4 or more, particularly 4 to 10, 4 to 8, 4 to 6, or 4 to 5.

In the structure for quantum dot barrier ribs, the thickness and optical density of the respective cured films may be the same or different.

The structure for quantum dot blocking ribs may have an optical density of 0.05/µm to 2.0/µm, 0.05/µm to 1.5/µm, 0.05/µm to 1.0/µm, 0.05/µm to 0.5/µm, or 0.1/µm to 0.2/µm. Here, the transmittance at 550 nm may be measured using an optical densitometer (361T manufactured by Xlite Corporation) to obtain an optical density (OD, unit: /µm) based on a thickness of 1 µm. Thus, the structure for quantum dot blocking ribs may have a total optical density of 0.5 to 10.0, 1.0 to 6.0, or 1.0 to 4.0. The total optical density is a value obtained by multiplying the unit optical density by the total thickness of the structure for quantum dot blocking ribs.

If the optical density and total optical density are within the above range, the resolution of the display can be further improved.

The height difference of the cured film of the structure for quantum dot blocking ribs is measured by the vertical movement of the tip of the probe of the equipment using SCAN PLUS, which is an α-step instrument (α-step profiler). The thickness of the cured film is obtained from the result. The final film thickness is a value obtained by measuring the final film of the structure for quantum dot blocking ribs prepared by forming a pattern through exposure and development and then baking it thereafter. It includes the entire multi-layer cured film, and the final film thickness can be 6 µm to 20 µm.

In addition, in the structure for quantum dot barrier ribs, the reflectivity R _SCI measured by the SCI (including the mirror reflection component) method and the reflectivity R _SCE measured by the SCE (excluding the mirror reflection component) method at a wavelength of 360 nm to 740 nm, or 550 nm can respectively satisfy the following relationships: (Relationship 1) R _SCI ≤ 5.0% (Relationship 2) R _SCE ≤ 0.5% (Relationship 3) 2 ≤ R _SCE /R _SCI ≤10.

Specifically, _RSCI may be 5.0% or less, 4.8% or less, 4.6% or less, 4.0% to 4.8%, or 4.0% to 4.6%. _RSCE may be 0.5% or less, 0.4% or less, 0.1% to 0.5%, 0.1% to 0.4%, or 0.2% to 0.4%. The ratio therebetween (i.e., _RSCE / _RSCI ) may be 2 to 10, 2 to 9, 2 to 8, 3 to 8, 4 to 8, or 4 to 7.5. Therefore, the characteristics of low reflectivity and high light shielding properties can be satisfied, and light leakage of red, green, etc. can be prevented.

Since the structure for quantum dot barrier ribs prepared in this way has excellent properties, it can be advantageously used in quantum dot displays.

Hereinafter, the present invention will be described in more detail with reference to the following examples. However, these examples are provided to illustrate the present invention, and the scope of the present invention is not limited thereto.

In the following synthesis examples, the weight average molecular weight was determined by gel permeation chromatography (GPC, eluent: tetrahydrofuran) with reference to a polystyrene standard. Synthesis Example 1 : Preparation of Copolymer (A-1)

Into a 500-ml round-bottom flask equipped with a reflux condenser and a stirrer, 100 g of a mixture consisting of 50 mol% of N-phenylmaleimide (PMI), 6 mol% of styrene (Sty), 10 mol% of 4-hydroxybutyl acrylate glycidyl ether (4-HBAGE) and 34 mol% of (meth)acrylic acid (MAA) was charged, together with 300 g of propylene glycol monomethyl ether acetate (PGMEA) as a solvent and 2 g of 2,2'-azobis(2,4-dimethylvaleronitrile) as a radical polymerization initiator. Thereafter, the mixture was heated to 70°C and stirred for 5 hours to obtain a copolymer (A-1) solution having a solid content of 31 wt%. The copolymer thus prepared had an acid value of 100 mg KOH/g and a weight average molecular weight (Mw) of 7,000 Da measured by gel permeation chromatography with reference to polystyrene. Synthesis Example 2 : Preparation of Copolymer (A-2)

In a 250-ml round-bottom flask equipped with a reflux condenser and a stirrer under a nitrogen atmosphere, 30 g of a monomer mixture consisting of 30 mol% of methyl (meth)acrylate, 20 mol% of (meth)acrylic acid, 30 mol% of hexafluoroisopropyl (meth)acrylate and 20 mol% of butyl (meth)acrylate and a mixture in which 2.74 g of V-59 as a radical polymerization initiator had been dissolved in 30 g of propylene glycol methyl ether acetate (PGMEA) as a solvent were added dropwise to a solvent heated to 80°C over 4 hours. Then, polymerization was continued for 20 hours to obtain a copolymer (A-2). The copolymer thus prepared had an acid value of 85 mg KOH/g, a weight average molecular weight (Mw) of 9,053 Da when measured by gel permeation chromatography and referenced to polystyrene, a solid content of 30.5 wt %, and a polydispersity (Mw/Mn) of 2.3. Synthesis Example 3 : Preparation of Copolymer (A-3)

In a 250-ml round-bottom flask equipped with a reflux condenser and a stirrer under a nitrogen atmosphere, 30 g of a monomer mixture consisting of 30 mol% of methyl (meth)acrylate, 20 mol% of (meth)acrylic acid, 30 mol% of octafluoropentyl (meth)acrylate and 20 mol% of butyl (meth)acrylate and a mixture in which 2.74 g of V-59 as a radical polymerization initiator had been dissolved in 30 g of propylene glycol methyl ether acetate (PGMEA) as a solvent were added dropwise to a solvent heated to 80° C. over 4 hours. The polymerization was then continued for 20 hours to obtain a copolymer (A-3). The copolymer thus prepared had an acid value of 66 mg KOH/g, a weight average molecular weight (Mw) of 14,968 Da when measured by gel permeation chromatography and referenced to polystyrene, a solid content of 31.2 wt %, and a polydispersity (Mw/Mn) of 2.3. Synthesis Example 4 : Preparation of Copolymer (A-4)

In a 250-ml round-bottom flask equipped with a reflux condenser and a stirrer under a nitrogen atmosphere, 30 g of a monomer mixture consisting of 30 mol% of methyl (meth)acrylate, 20 mol% of (meth)acrylic acid, 30 mol% of trifluoroethyl (meth)acrylate and 20 mol% of butyl (meth)acrylate and a mixture in which 2.74 g of V-59 as a radical polymerization initiator had been dissolved in 30 g of propylene glycol methyl ether acetate (PGMEA) as a solvent were added dropwise to a solvent heated to 80° C. over 4 hours. The polymerization was then continued for 20 hours to obtain a copolymer (A-4). The copolymer thus prepared had an acid value of 98 mg KOH/g, a weight average molecular weight (Mw) of 7,551 Da when measured by gel permeation chromatography and referenced to polystyrene, a solids content of 31.6 wt %, and a polydispersity (Mw/Mn) of 2.04.

The structural units used in the preparation of the copolymers of Synthesis Examples 1 to 4 and their contents are shown in Table 1 below.

[Table 1] Components Synthesis Example 1 (A-1) Synthesis Example 2 (A-2) Synthesis Example 3 (A-3) Synthesis Example 4 (A-4) Molecular weight (Da) 7,000 9,053 14,968 7,551 (a-1) (Meth)acrylic acid (MAA) (mole %) 34 20 20 20 (a-2) Styrene (mol%) 6 - - - (a-3) 4-Hydroxybutyl acrylate glycidyl ether (4-HBAGE) (mole %) 10 - - - (a-4) N-phenylmaleimide (PMI) (mole %) 50 - - - Methyl (meth)acrylate (MMA) (mole %) - 30 30 30 Butyl (meth)acrylate (BMA) (mole %) - 20 20 20 Trifluoroethyl (meth)acrylate (TFEMA) (mole %) - - - 30 Hexafluoroisopropyl (meth)acrylate (HFiPMA) (mole %) - 30 - - Octafluoropentyl (meth)acrylate (OFPA) (mole %) - - 30 - Preparation example: Preparation of photosensitive resin composition

The photosensitive resin composition of the following Preparation Example was prepared using the copolymer prepared in the above Synthesis Example.

The components used in the following preparation examples are shown in Table 2 below.

[Table 2] Components Compound Name and/or Trademark Name Manufacturer Copolymer (A) Copolymer (A-1) Synthesis Example 1 - Copolymer (A-2) Synthesis Example 2 - Copolymer (A-3) Synthesis Example 3 - Copolymer (A-4) Synthesis Example 4 - Photopolymerizable compound (B) B-1 Dipentaethrol hexaacrylate (DPHA) Nippon Kayaku Co., Ltd. B-2 Di(trihydroxymethylpropane)tetraacrylate (T-1420) Nippon Kayaku Co., Ltd. Photopolymerization initiator (C) C-1 N-1919 (oxime-based photoinitiator) Asahi Denka Corporation C-2 SPI-03 (oxime-based photoinitiator) Samyang Company C-3 (E)-2-(4-phenylvinylphenyl)-4,6-bis(trichloromethyl)-1,3,5-triazine (triazine-Y, triazine photoinitiator) Strong Company Colorant(D) D-1 BK-0326 (Contains carbon black) TOKUSHIKI CO., LTD. D-2 BK-7539 (Contains organic black pigment) TOKUSHIKI CO., LTD. D-3 Blue-B2 (including pigment blue 15:6) Iridos Ltd. D-4 IV-005 (Contains pigment violet 23) Iridos Ltd. Surfactant (E) F563 DIC Corporation Additive(F) Epoxide (F-1) MIPHOTO GHP03HHP MIYUAN CO.,LTD. Photobase generator (F-2) WPBG-018 Wako Junyaku Industries Co., Ltd. Thiol-based compounds (F-3) Pentaerythritol tetra(3-pentyl propionate) (PETMP) Aldrich Solvent(G) G-1 Propylene glycol monomethyl ether acetate (PGMEA) Chemtronics G-2 3-Methoxybutyl acetate (3MBA) Jewon Preparation Example < Preparation of Photosensitive Resin Composition > Preparation Example 1-1 : First Photosensitive Resin Composition

100 parts by weight (solid content) of the copolymer (A-1) obtained in Synthesis Example 1 as a copolymer, 40 parts by weight of 6-functional dipentatriol hexaacrylate (DPHA) (B-1, Nippon Kayaku Co., Ltd.) as a photopolymerizable compound (B), 40 parts by weight of 4-functional di(trihydroxymethylpropane) tetraacrylate (B-2, trade name T-1420, Nippon Kayaku Co., Ltd.) as a photopolymerization initiator (C) 2.0 parts by weight of N-1919 (oxime-based photoinitiator 1) (C-1), 1.0 parts by weight of SPI-03 (oxime-based photoinitiator 2) (C-2), and 0.4 parts by weight of (E)-2-(4-phenylvinylphenyl)-4,6-bis(trichloromethyl)-1,3,5-trioxane (trioxane photoinitiator 3) (C-3), 6.8 parts by weight of BK-7539 (TOKUSHIKI Co., Ltd.) as a black organic colorant (D-2), 0.2 parts by weight of F563 (DIC Corporation) as a surfactant (E), and 0.5 parts by weight of MIPHOTO as an additive. GHP03HHP (Migen Shoji Co., Ltd.) (epoxy curing agent (F-1)) was uniformly mixed. Propylene glycol monomethyl ether acetate (PGMEA) was added to the mixture so that the solid content of the mixture was 25% by weight. The resultant was mixed for 2 hours using a vibrator to prepare a liquid phase photosensitive resin composition. Preparation Example 1-2 : Second photosensitive resin composition

A photosensitive resin composition was prepared in the same manner as in Preparation Example 1-1, except that 0.6 parts by weight of SPI-03 (oxime-based photoinitiator 2) (C-2) and 0.4 parts by weight of (E)-2-(4-phenylvinylphenyl)-4,6-bis(trichloromethyl)-1,3,5-trioxane (trioxane photoinitiator 3) (C-3) were used as a photopolymerization initiator (C), and 12.7 parts by weight of BK-7539 (TOKUSHIKI Co., Ltd.) was used as an organic colorant (D-2), which were uniformly mixed without adding an additive, and a mixture of propylene glycol monomethyl ether acetate (PGMEA) (G-1) and 3-methoxybutyl acetate (3BMA) (G-2) was added so that the solid content of the mixture was 25% by weight. Preparation Examples 2-1 to 25-2

A photosensitive resin composition was prepared in the same manner as in Preparation Example 1-1, except that the kinds and/or contents of the corresponding components were changed as shown in Table 3 below.

[Table 3] Copolymer (A) Photopolymerizable compound (B) Photopolymerization initiator (C) Colorant(D) Preparation Example 1-1 A-1 100 B-1 40 B-2 40 C-1 2 C-2 1 C-3 0.4 D-1 0 D-2 5.1 Preparation Example 1-2 A-1 100 B-1 40 B-2 40 C-1 0 C-2 0.6 C-3 0.4 D-1 0 D-2 9.5 Preparation Example 2-1 A-1 100 B-1 40 B-2 40 C-1 0 C-2 1 C-3 0.4 D-1 0 D-2 5.0 Preparation Example 2-2 A-1 100 B-1 40 B-2 40 C-1 0 C-2 1 C-3 0.4 D-1 0 D-2 5.0 Preparation Example 3-1 A-1 100 B-1 40 B-2 40 C-1 2 C-2 1 C-3 0.4 D-1 0 D-2 5.1 Preparation Example 3-2 A-1 100 B-1 40 B-2 40 C-1 0 C-2 0.3 C-3 0.2 D-1 0 D-2 9.5 Preparation Example 4-1 A-1 100 B-1 40 B-2 40 C-1 2 C-2 1 C-3 0.4 D-1 0 D-2 5.3 Preparation Example 4-2 A-1 100 B-1 40 B-2 40 C-1 0 C-2 0.1 C-3 0.1 D-1 0 D-2 9.5 Preparation Example 5-1 A-1 100 B-1 40 B-2 40 C-1 2 C-2 1 C-3 0.4 D-1 0 D-2 5.1 Preparation Example 5-2 A-1 100 B-1 15 B-2 65 C-1 0 C-2 0.1 C-3 0.1 D-1 0 D-2 9.5 Preparation Example 6-1 A-1 100 B-1 40 B-2 40 C-1 0 C-2 0.6 C-3 0.4 D-1 0 D-2 5.3 Preparation Example 6-2 A-2 100 B-1 40 B-2 40 C-1 2 C-2 1 C-3 0.4 D-1 0 D-2 9.4 Preparation Example 7-1 A-1 100 B-1 40 B-2 40 C-1 2 C-2 1 C-3 0.4 D-1 0 D-2 5.3 Preparation Example 7-2 A-3 100 B-1 40 B-2 40 C-1 2 C-2 1 C-3 0.4 D-1 0 D-2 9.4 Preparation Example 8-1 A-1 100 B-1 40 B-2 40 C-1 2 C-2 1 C-3 0.4 D-1 0 D-2 5.3 Preparation Example 8-2 A-4 100 B-1 40 B-2 40 C-1 2 C-2 1 C-3 0.4 D-1 0 D-2 9.4 Preparation Example 9-1 A-1 100 B-1 40 B-2 40 C-1 2 C-2 1 C-3 0.4 D-1 0 D-2 5.1 Preparation Example 9-2 A-1 100 B-1 15 B-2 65 C-1 0 C-2 0.4 C-3 0.4 D-1 0.7 D-2 11.1 Preparation Example 10-1 A-1 100 B-1 40 B-2 40 C-1 2 C-2 1 C-3 0.4 D-1 0 D-2 5.1 Preparation Example 10-2 A-1 100 B-1 40 B-2 40 C-1 0 C-2 0.4 C-3 0.4 D-1 0 D-2 12.6 Preparation Example 11-1 A-1 100 B-1 40 B-2 40 C-1 2 C-2 1 C-3 0.4 D-1 0 D-2 5.1 Preparation Example 11-2 A-1 100 B-1 40 B-2 40 C-1 0 C-2 0.4 C-3 0.4 D-1 0 D-2 10.8 Preparation Example 12-1 A-1 100 B-1 40 B-2 40 C-1 2 C-2 1 C-3 0.4 D-1 0 D-2 5.1 Preparation Example 12-2 A-1 100 B-1 40 B-2 40 C-1 0 C-2 0.4 C-3 0.4 D-1 0 D-2 11.1 Preparation Example 13-1 A-1 100 B-1 40 B-2 40 C-1 2 C-2 1 C-3 0.4 D-1 0 D-2 5.1 Preparation Example 13-2 A-1 100 B-1 40 B-2 40 C-1 0 C-2 0.4 C-3 0.4 D-1 1.0 D-2 19.0 Preparation Example 14 A-1 100 B-1 40 B-2 40 C-1 0 C-2 0.6 C-3 0.4 D-1 0 D-2 9.8 Preparation Example 15 A-1 100 B-1 40 B-2 40 C-1 0 C-2 0.6 C-3 0.4 D-1 0 D-2 17.3 Preparation Example 16 A-1 100 B-1 40 B-2 40 C-1 0 C-2 0.6 C-3 0.4 D-1 0 D-2 5.1 Preparation Example 17 A-1 100 B-1 40 B-2 40 C-1 0 C-2 1 C-3 0.4 D-1 0 D-2 5.0 Preparation Example 18 A-1 100 B-1 40 B-2 40 C-1 0 C-2 0.6 C-3 0.4 D-1 0 D-2 16.8 Preparation Example 19 A-1 100 B-1 40 B-2 40 C-1 0 C-2 0.4 C-3 0.4 D-1 0.7 D-2 11.1 Preparation Example 20 A-1 100 B-1 40 B-2 40 C-1 0 C-2 0.4 C-3 0.4 D-1 0 D-2 12.6 Preparation Example 21 A-1 100 B-1 40 B-2 40 C-1 0 C-2 0.4 C-3 0.4 D-1 0 D-2 10.8 Preparation Example 22 A-1 100 B-1 40 B-2 40 C-1 0 C-2 0.4 C-3 0.4 D-1 0 D-2 11.1 Preparation Example 23 A-1 100 B-1 40 B-2 40 C-1 0 C-2 0.4 C-3 0.4 D-1 1.0 D-2 19.0 Preparation Example 24 A-1 100 B-1 40 B-2 40 C-1 0 C-2 0.4 C-3 0.4 D-1 23.0 D-2 69.1 Preparation Example 25-1 A-1 100 B-1 40 B-2 40 C-1 2 C-2 1 C-3 0.4 D-1 0 D-2 5.1 Preparation Example 25-2 A-4 100 B-1 40 B-2 40 C-1 0 C-2 0.4 C-3 0.4 D-1 23.0 D-2 69.1 Colorant(D) Surfactant (E) Additive(F) Solvent(G) Preparation Example 1-1 D3 0 D4 0 0.2 F-1 0.5 F-2 0 F-3 0 G-1 100 G-2 0 Preparation Example 1-2 D3 0 D4 0 0.2 F-1 0 F-2 0 F-3 0 G-1 85 G-2 15 Preparation Example 2-1 D3 0 D4 0 0.2 F-1 0 F-2 0.5 F-3 0 G-1 85 G-2 15 Preparation Example 2-2 D3 0 D4 0 0.2 F-1 0 F-2 0 F-3 0 G-1 85 G-2 15 Preparation Example 3-1 D3 0 D4 0 0.2 F-1 1 F-2 0 F-3 0 G-1 85 G-2 15 Preparation Example 3-2 D3 0 D4 0 0.2 F-1 0 F-2 0.5 F-3 0 G-1 100 G-2 0 Preparation Example 4-1 D3 0 D4 0 0.2 F-1 0 F-2 0 F-3 3 G-1 85 G-2 15 Preparation Example 4-2 D3 0 D4 0 0.2 F-1 0 F-2 0.5 F-3 0 G-1 100 G-2 0 Preparation Example 5-1 D3 0 D4 0 0.2 F-1 0 F-2 0.5 F-3 0 G-1 85 G-2 15 Preparation Example 5-2 D3 0 D4 0 0.2 F-1 0 F-2 0.5 F-3 0 G-1 100 G-2 0 Preparation Example 6-1 D3 0 D4 0 0.2 F-1 0 F-2 0 F-3 3 G-1 85 G-2 15 Preparation Example 6-2 D3 0 D4 0 0.2 F-1 0 F-2 0.5 F-3 3 G-1 100 G-2 0 Preparation Example 7-1 D3 0 D4 0 0.2 F-1 0 F-2 0 F-3 3 G-1 85 G-2 15 Preparation Example 7-2 D3 0 D4 0 0.2 F-1 0 F-2 0.5 F-3 3 G-1 100 G-2 0 Preparation Example 8-1 D3 0 D4 0 0.2 F-1 0 F-2 0 F-3 3 G-1 85 G-2 15 Preparation Example 8-2 D3 0 D4 0 0.2 F-1 0 F-2 0.5 F-3 3 G-1 100 G-2 0 Preparation Example 9-1 D3 0 D4 0 0.2 F-1 0 F-2 0.5 F-3 0 G-1 85 G-2 15 Preparation Example 9-2 D3 0 D4 0 0.2 F-1 0 F-2 0.5 F-3 0 G-1 100 G-2 0 Preparation Example 10-1 D3 0 D4 0 0.2 F-1 0 F-2 0.5 F-3 0 G-1 85 G-2 15 Preparation Example 10-2 D3 0 D4 0 0.2 F-1 0 F-2 0.5 F-3 0 G-1 100 G-2 0 Preparation Example 11-1 D3 0 D4 0 0.2 F-1 0 F-2 0.5 F-3 0 G-1 85 G-2 15 Preparation Example 11-2 D3 3.7 D4 0 0.2 F-1 0 F-2 0.5 F-3 0 G-1 100 G-2 0 Preparation Example 12-1 D3 0 D4 0 0.2 F-1 0 F-2 0.5 F-3 0 G-1 85 G-2 15 Preparation Example 12-2 D3 0 D4 2.2 0.2 F-1 0 F-2 0.5 F-3 0 G-1 100 G-2 0 Preparation Example 13-1 D3 0 D4 0 0.2 F-1 0 F-2 0.5 F-3 0 G-1 85 G-2 15 Preparation Example 13-2 D3 0 D4 0 0.2 F-1 0 F-2 0.5 F-3 0 G-1 100 G-2 0 Preparation Example 14 D3 0 D4 0 0.2 F-1 0 F-2 0.5 F-3 0 G-1 85 G-2 15 Preparation Example 15 D3 0 D4 0 0.2 F-1 0 F-2 0.5 F-3 0 G-1 85 G-2 15 Preparation Example 16 D3 0 D4 0 0.2 F-1 0 F-2 0.5 F-3 0 G-1 85 G-2 15 Preparation Example 17 D3 0 D4 0 0.2 F-1 0 F-2 0 F-3 0 G-1 85 G-2 15 Preparation Example 18 D3 0 D4 0 0.2 F-1 0 F-2 1 F-3 0 G-1 100 G-2 0 Preparation Example 19 D3 0 D4 0 0.2 F-1 0 F-2 0.5 F-3 0 G-1 100 G-2 0 Preparation Example 20 D3 0 D4 0 0.2 F-1 0 F-2 0.5 F-3 0 G-1 100 G-2 0 Preparation Example 21 D3 3.7 D4 0 0.2 F-1 0 F-2 0.5 F-3 0 G-1 100 G-2 0 Preparation Example 22 D3 0 D4 2.2 0.2 F-1 0 F-2 0.5 F-3 0 G-1 100 G-2 0 Preparation Example 23 D3 0 D4 0 0.2 F-1 0 F-2 0.5 F-3 0 G-1 100 G-2 0 Preparation Example 24 D3 0 D4 0 0.2 F-1 0 F-2 0.5 F-3 0 G-1 100 G-2 0 Preparation Example 25-1 D3 0 D4 0 0.2 F-1 0 F-2 0.5 F-3 0 G-1 85 G-2 15 Preparation Example 25-2 D3 0 D4 0 0.2 F-1 0 F-2 0.5 F-3 0 G-1 100 G-2 0 < Preparation of a structure for quantum dot barrier ribs > Example 1

The photosensitive resin composition obtained in Preparation Example 1-1 was coated as a first photosensitive resin composition on a glass substrate immersed in distilled water and then dried using a rotary coater. It was pre-baked at 90°C for 150 seconds to form a coating film having a thickness of 6.0 μm or more. The coating film was further intermediate-baked at 130°C for 300 seconds to remove the solvent to form a first cured film (i.e., lower film).

The photosensitive resin composition obtained in Preparation Example 1-2 was applied as a second photosensitive resin composition on the first cured film, and pre-baked at 90° C. for 150 seconds to form a second cured film (i.e., upper film) having a thickness of 6.0 μm or more, thereby preparing a multilayer cured film having two layers.

Thereafter, a mask was placed on the multi-layer cured film so that its 5 cm by 5 cm area was 100% exposed and the gap with the substrate was minimized in contact. Thereafter, an aligner (model name: MA6) emitting light with a wavelength of 200 nm to 450 nm was used to expose it for a certain period of time at an exposure dose of 150 mJ/ ^cm2 based on a wavelength of 365 nm. It was then developed at 23°C with an aqueous potassium hydroxide solution diluted to a concentration of 0.04 wt% until the unexposed portion was completely washed off. The pattern thus formed was post-baked in an oven at 230°C for 30 minutes to prepare a structure for quantum dot barrier ribs. Examples 2 to 13

A structure for quantum dot barrier ribs comprising a multi-layered cured film was prepared in the same manner as in Example 1, except that the first photosensitive resin composition and the second photosensitive resin composition having the components and contents shown in Table 3 above were used (Preparation Examples 2-1 to 13-2) and the developing time and film thickness were changed as shown in Tables 4 and 6 below. Comparative Examples 1 to 11

A structure for quantum dot barrier ribs including a single-layer cured film was prepared in the same manner as in Example 1, except that a photosensitive resin composition having the components and contents shown in Table 3 above (Preparation Examples 14 to 24) was used to form a first cured film and the development time and film thickness were changed as shown in Tables 4 and 6 below to prepare a single-layer cured film. Comparative Example 12

A structure for quantum dot barrier ribs comprising a multi-layer cured film was prepared in the same manner as in Example 1, except that a first photosensitive resin composition (Preparation Example 25-1) and a second photosensitive resin composition (Preparation Example 25-2) having the components and contents shown in Table 3 above were used and the developing time and film thickness were changed as shown in Tables 4 and 6 below. Evaluation Example 1 : Development Time

When developing with a 0.04 wt % potassium hydroxide aqueous solution in the method for preparing a structure for quantum dot blocking ribs of Examples and Comparative Examples, the time until the unexposed portion was completely washed away (until the O-ring portion of the developing device was completely visible behind the substrate) was measured.

- If the development time is 300 seconds or less, it is evaluated as ○. If it exceeds 300 seconds, it is evaluated as x. Evaluation Example 2 : Resolution and critical size of line pattern

In order to measure the pattern resolution and critical dimension (CD; unit: µm) of the line pattern in the structure of the quantum dot barrier rib of the example and the comparative example, the line CD was observed using a micro-optical microscope (STM6-LM, manufacturer: OLYMPUS) and an X-ray scanning electron microscope (SEM; S4300). The results are shown in FIGS. 5 and 6.

In addition, the size of the 13-µm line pattern of the photomask was observed to measure the resolution. That is, the pattern size of the line pattern after curing (13 µm patterning under the optimal exposure dose condition (150 mJ/cm ² )) was measured. The smaller the value, the more excellent the resolution is because a smaller pattern can be formed.

- If the resolution is greater than 0 to 20 µm, it is evaluated as ○. If it exceeds 20 µm, it is evaluated as x. Evaluation Example 3 : Thickness of the cured film before and after post-baking

The height difference of the structure for the quantum dot blocking rib of each of the example and the comparative example was measured by vertical motion of the probe tip of the device using SCAN PLUS, which is an α-step instrument (α-step profiler). The thickness thereof was obtained from the result.

The initial film thickness refers to the thickness of a film formed after pre-baking prior to exposure and development steps in the preparation of a structure for quantum dot barrier ribs (ie, the film thickness before post-baking).

The final film thickness refers to the thickness of the final film of the structure for quantum dot blocking ribs formed after exposure and development steps to form a pattern and subsequent baking in the preparation of the structure for quantum dot blocking ribs (i.e., the film thickness after post-baking).

- If the initial film thickness and the final film thickness are multi-layered, they are evaluated as ○. If they are single-layered, they are evaluated as x. Evaluation Example 4 : Optical Density

The transmittance at 550 nm of the cured film of the structure for quantum dot blocking ribs of the examples and comparative examples was measured using an optical densitometer (361T manufactured by Xlite Corporation). The optical density (OD, unit: /µm) based on a thickness of 1 µm and the optical density of the final film thickness were determined. The total optical density is a value obtained by multiplying the optical density based on 1 µm by the final film thickness (in the case of comparative examples 11 and 12, the total optical density was calculated based on the film thickness before post-baking).

Total optical density = optical density based on 1 µm (/µm) X final film thickness (µm) Evaluation Example 5 : Reflectivity

The R _SCI and R _SCE of the cured films of each of the Example and the Comparative Example for the structure of the quantum dot barrier rib were measured using a spectrophotometer device (CM-3700A) at a wavelength of 550 nm, and then the ratio therebetween (R _SCE /R _SCI ) was calculated.

- If _RSCI is 5.0% or less, it is evaluated as ○. If it exceeds 5.0%, it is evaluated as x.

- If _RSCE is 0.5% or less, it is evaluated as ○. If it exceeds 0.5%, it is evaluated as x.

- If R _SCE /R _SCI is 2% to 10%, it is evaluated as ○. If it is less than 2.0% or greater than 10%, it is evaluated as x. Evaluation Example 6 : Contact Angle

The contact angle of the cured film of each of the examples and comparative examples for the structure of the quantum dot blocking rib was measured using 2-ethoxyethanol (polar solvent) and a contact angle measurement device (DM300, Kyowa).

- Confirm that the cured film without the fluorinated copolymer has a contact angle of 0°, and the cured film containing the fluorinated copolymer has a contact angle of 10° to 20°.

The results of the evaluation examples are shown in Tables 4 to 7 below.

[Table 4] Development time (seconds) Resolution (µm) Cured film thickness (µm) Optical density Before post-baking After post-baking Optical density (/µm) Total optical density Example 1 Preparation Example 1-1 ○ 160 ○ 15 ○ 13.30 ○ 12.00 0.17 2.0 Preparation Example 1-2 ○ ○ ○ ○ Example 2 Preparation Example 2-1 ○ 150 ○ 16 ○ 14.40 ○ 13.00 0.11 1.4 Preparation Example 2-2 ○ ○ ○ ○ Example 3 Preparation Example 3-1 ○ 180 ○ 13 ○ 13.30 ○ 12.00 0.17 2.0 Preparation Example 3-2 ○ ○ ○ ○ Example 4 Preparation Example 4-1 ○ 160 ○ 14 ○ 14.40 ○ 13.00 0.17 2.2 Preparation Example 4-2 ○ ○ ○ ○ Example 5 Preparation Example 5-1 ○ 150 ○ 14 ○ 14.40 ○ 13.00 0.17 2.2 Preparation Example 5-2 ○ ○ ○ ○ Example 6 Preparation Example 6-1 ○ 280 ○ 13 ○ 13.20 ○ 11.90 0.17 2.0 Preparation Example 6-2 ○ ○ ○ ○ Example 7 Preparation Example 7-1 ○ 280 ○ 12 ○ 12.90 ○ 11.66 0.16 1.9 Preparation Example 7-2 ○ ○ ○ ○ Example 8 Preparation Example 8-1 ○ 110 ○ 15 ○ 14.50 ○ 13.12 0.17 2.2 Preparation Example 8-2 ○ ○ ○ ○ Example 9 Preparation Example 9-1 ○ 160 ○ 14 ○ 11.50 ○ 10.44 0.22 2.3 Preparation Example 9-2 ○ ○ ○ ○ Example 10 Preparation Example 10-1 ○ 160 ○ 15 ○ 12.80 ○ 11.66 0.22 2.6 Preparation Example 10-2 ○ ○ ○ ○ Example 11 Preparation Example 11-1 ○ 160 ○ 16 ○ 12.80 ○ 7.29 0.36 2.6 Preparation Example 11-2 ○ ○ ○ ○ Example 12 Preparation Example 12-1 ○ 180 ○ 15 ○ 13.20 ○ 11.90 0.22 2.6 Preparation Example 12-2 ○ ○ ○ ○ Example 13 Preparation Example 13-1 ○ 150 ○ 12 ○ 12.60 ○ 6.80 0.56 3.8 Preparation Example 13-2 ○ ○ ○ ○

[Table 5] _RSCI (%) _RSCE (%) R _SCE/ R _SCI Contact angle (°) Example 1 Preparation Example 1-1 ○ 4.47 ○ 0.26 ○ 5.8 0 Preparation Example 1-2 ○ ○ ○ Example 2 Preparation Example 2-1 ○ 4.5 ○ 0.29 ○ 6.4 0 Preparation Example 2-2 ○ ○ ○ Example 3 Preparation Example 3-1 ○ 4.47 ○ 0.26 ○ 5.8 0 Preparation Example 3-1 ○ ○ ○ Example 4 Preparation Example 4-1 ○ 4.47 ○ 0.26 ○ 5.8 0 Preparation Example 4-2 ○ ○ ○ Example 5 Preparation Example 5-1 ○ 4.50 ○ 0.32 ○ 7.1 0 Preparation Example 5-2 ○ ○ ○ Example 6 Preparation Example 6-1 ○ 4.51 ○ 0.32 ○ 7.1 12 Preparation Example 6-2 ○ ○ ○ Example 7 Preparation Example 7-1 ○ 4.46 ○ 0.24 ○ 5.4 17 Preparation Example 7-2 ○ ○ ○ Example 8 Preparation Example 8-1 ○ 4.46 ○ 0.24 ○ 5.4 12 Preparation Example 8-2 ○ ○ ○ Example 9 Preparation Example 9-1 ○ 4.45 ○ 0.25 ○ 5.6 0 Preparation Example 9-2 ○ ○ ○ Example 10 Preparation Example 10-1 ○ 4.50 ○ 0.32 ○ 7.1 0 Preparation Example 10-2 ○ ○ ○ Example 11 Preparation Example 11-1 ○ 4.45 ○ 0.24 ○ 5.4 0 Preparation Example 11-2 ○ ○ ○ Example 12 Preparation Example 12-1 ○ 4.46 ○ 0.26 ○ 5.8 0 Preparation Example 12-2 ○ ○ ○ Example 13 Preparation Example 13-1 ○ 4.46 ○ 0.25 ○ 5.6 0 Preparation Example 13-2 ○ ○ ○

[Table 6] Development time (seconds) Resolution (µm) Cured film thickness (µm) Optical density Before post-baking After post-baking Optical density (/µm) Total optical density Comparison Example 1 Preparation Example 14 ○ 78 ○ 12 X 6.80 X 5.94 0.23 1.4 Comparison Example 2 Preparation Example 15 ○ 77 ○ 11 X 6.70 X 5.90 0.33 2.0 Comparison Example 3 Preparation Example 16 ○ 80 ○ 14 X 6.80 X 5.95 0.12 0.7 Comparison Example 4 Preparation Example 17 ○ 72 ○ 14 X 6.80 X 5.96 0.12 0.7 Comparison Example 5 Preparation Example 18 ○ 60 ○ 12 X 6.70 X 5.87 0.22 1.3 Comparative Example 6 Preparation Example 19 ○ 75 ○ 10 X 6.70 X 5.03 0.40 2.0 Comparative Example 7 Preparation Example 20 ○ 75 ○ 11 X 6.60 X 5.31 0.38 2.0 Comparative Example 8 Preparation Example 21 ○ 76 ○ 14 X 6.50 X 4.34 0.46 2.0 Comparative Example 9 Preparation Example 22 ○ 83 ○ 10 X 6.60 X 5.31 0.38 2.0 Comparative Example 10 Preparation Example 23 ○ 72 ○ 12 X 6.80 X 3.78 0.90 3.4 Comparative Example 11 Preparation Example 24 ○ 90 X 0 X 6.70 X 0.00 1.0 6.7 Comparative Example 12 Preparation Example 25-1 ○ 220 X 0 ○ 12.60 ○ 0.00 0.55 6.9 Preparation Example 25-2 ○ X ○ ○

[Table 7] _RSCI (%) _RSCE (%) R _SCE/ R _SCI Contact angle (°) Comparison Example 1 Preparation Example 14 ○ 4.53 ○ 0.33 ○ 7.3 0 Comparison Example 2 Preparation Example 15 ○ 4.47 ○ 0.27 ○ 6.0 0 Comparison Example 3 Preparation Example 16 X 5.05 X 0.55 X 10.9 0 Comparison Example 4 Preparation Example 17 X 5.04 X 0.55 X 10.9 0 Comparison Example 5 Preparation Example 18 ○ 4.53 ○ 0.32 ○ 7.1 0 Comparative Example 6 Preparation Example 19 ○ 4.46 ○ 0.29 ○ 6.5 0 Comparative Example 7 Preparation Example 20 ○ 4.47 ○ 0.27 ○ 6.0 0 Comparative Example 8 Preparation Example 21 ○ 4.41 ○ 0.26 ○ 5.9 0 Comparative Example 9 Preparation Example 22 ○ 4.36 ○ 0.2 ○ 4.6 0 Comparative Example 10 Preparation Example 23 ○ 4.51 ○ 0.32 ○ 7.1 0 Comparative Example 11 Preparation Example 24 ○ 4.76 ○ 0.19 ○ 4.0 0 Comparative Example 12 Preparation Example 25-1 ○ 4.41 ○ 0.2 ○ 4.5 0 Preparation Example 25-2 ○ ○ ○

As shown in Tables 4 to 7, the structures for quantum dot barrier ribs of Examples 1 to 13 prepared from multilayer cured films using the photosensitive resin compositions of Preparation Examples 1-1 to 13-2 have a total thickness satisfying the range of 6 µm to 20 µm. A sufficient thickness for quantum dot barrier ribs can be formed. If a multilayer cured film having a thickness within the above range is used as a quantum dot barrier rib, when a quantum dot solution is dripped, it does not overflow the barrier rib. Therefore, the color components are not mixed, and resolution degradation can be prevented.

In addition, the structures for quantum dot barrier ribs of Examples 1 to 13 had _RSCI of 5% or less, _RSCE of 0.5% or less, and _RSCE / _RSC of 2 to 10. Therefore, it was confirmed that they satisfied the low reflectivity characteristics. In addition, it was confirmed that they could achieve high light shielding characteristics because the total optical density of the final film thickness after post-baking fell within the range of the present invention. The resolution at the level of 12 µm to 16 µm was excellent.

In contrast, the structures for quantum dot barrier ribs of Comparative Examples 1 to 11 prepared from a single-layer cured film using the photosensitive resin composition of Preparation Examples 14 to 24 have a total thickness of 3 µm to less than 6 µm. If a structure having such a thickness range is used as a quantum dot barrier rib, the quantum dot solution may overflow the barrier rib, so that color separation may be difficult and may be contaminated, resulting in deteriorated resolution.

In particular, since the structures for quantum dot barrier ribs of Comparative Examples 3 and 4 have a total optical density of 0.7, their light shielding properties are poor. They have _RSCI of more than 5%, _RSCE of more than 0.5%, and _RSCE / _RSC of more than 10, indicating that they have high reflectivity compared with the structures for quantum dot barrier ribs of Examples 1 to 13. Therefore, they cannot achieve low reflectivity and high light shielding properties as desired in the present invention.

5 and 6 are photographs of cross sections and sides of the structures for quantum dot blocking ribs of Examples 1 to 13 and Comparative Examples 1 to 12 observed with an optical microscope.

As confirmed by FIG. 5 , the cured film structures for the quantum dot blocking ribs of Examples 1 to 13 are all clear and distinct in line width, and are uniform and thick in film thickness.

In contrast, as confirmed by FIG. 6 , the cured films of the structures for quantum dot blocking ribs of Comparative Examples 1 to 12 are not suitable for quantum dot blocking ribs because they have thin thicknesses. In particular, in Comparative Examples 11 and 12, because the film is separated, no pattern is formed; or the pattern is not clear. In particular, although the structure for quantum dot blocking ribs of Comparative Example 12 is prepared as a multi-layered cured film, the content of the coloring agent is high, so that the film is separated due to lack of photocuring under the optimal exposure dose condition (150 mJ/cm ² ), resulting in a resolution of 0 µm; and the pattern is not clear.

100: substrate structure 110: transparent substrate 120: barrier ribs 130: first quantum dot solution 140: second quantum dot solution 150: third quantum dot solution 200, 300, 400: structure for quantum dot barrier ribs 210, 310, 410: substrate 211, 311, 411: first cured film 212, 312, 412: second cured film 313, 413: third cured film nn: nth cured film

[Figure 1] is a schematic diagram illustrating a typical quantum dot device.

[FIG. 2] is a schematic diagram of a structure for quantum dot blocking ribs comprising two layers of cured films according to an embodiment of the present invention.

[FIG. 3] is a schematic diagram of a structure for quantum dot blocking ribs comprising three layers of cured films according to an embodiment of the present invention.

[FIG. 4] is a schematic diagram of a structure for quantum dot blocking ribs comprising n layers of cured films according to an embodiment of the present invention.

[Fig. 5] is a photograph of the cross section and side surface of the structure of the quantum dot blocking rib of Examples 1 to 13 observed with an optical microscope.

[FIG. 6] is a photograph of the cross section and side surface of the structure of the quantum dot blocking rib of Comparative Examples 1 to 12 observed with an optical microscope.

without

400: Structure for quantum dot barrier ribs

410: Base

411: First curing film

412: Second curing film

413: The third curing film

nn: nth cured film

Claims (18)

A structure for quantum dot blocking ribs, the structure comprising a first cured film formed of a first photosensitive resin composition and a second cured film formed of a second photosensitive resin composition on the first cured film, wherein the first photosensitive resin composition and the second photosensitive resin composition comprise: (A) a copolymer; (B) a photopolymerizable compound; (C) a photopolymerization initiator; and (D) a colorant comprising a black colorant, wherein the colorant (D) is used in an amount of 1 to 40 parts by weight based on 100 parts by weight of the copolymer (A), wherein the structure for quantum dot blocking ribs has a total thickness of 6 μm or more, an optical density of 0.05/μm to 2.0/μm, and a reflectivity R measured by an SCI (including a specular reflection component) method at a wavelength of 550 nm that satisfies the following relationships, respectively: _SCI and the reflectivity R _SCE measured by the SCE method (excluding the specular reflection component): (Relationship 1) R _SCI

5.0%(Relationship 2) _RSCE

0.5%(Relationship 3)2

_RSCE / _RSCI

10. The structure for quantum dot barrier ribs as described in claim 1, wherein the black colorant comprises at least one selected from the group consisting of: a black organic colorant and a black inorganic colorant. The structure for quantum dot barrier ribs as described in claim 2, wherein the black organic colorant is used in an amount of 3 to 40 parts by weight based on 100 parts by weight of the copolymer (A). The structure for quantum dot barrier ribs as described in claim 2, wherein the black inorganic colorant is used in an amount of 0.01 to 10 parts by weight based on 100 parts by weight of the copolymer (A). The structure for quantum dot barrier ribs as described in claim 1, wherein the colorant (D) further includes a colorant containing at least one selected from the group consisting of a blue colorant and a purple colorant. The structure for quantum dot barrier ribs as described in claim 5, wherein the blue colorant and the purple colorant are used in an amount of 0.01 to 10 parts by weight based on 100 parts by weight of the copolymer (A). The structure for quantum dot blocking ribs as described in claim 1, wherein the photosensitive resin composition further comprises at least one selected from the group consisting of: epoxy compounds, photobase generators, thiol compounds, and compounds derived from epoxy resins. The structure for quantum dot blocking ribs as described in claim 1, wherein the first cured film and the second cured film each have a thickness of 10 μm or less. A structure for quantum dot blocking ribs as described in claim 1, wherein the multi-layer cured film has a total thickness of 6 μm to 20 μm. A structure for quantum dot barrier ribs as described in claim 1, wherein the structure has an optical density of 0.05/μm to 2.0/μm. A method for preparing a structure for quantum dot barrier ribs, the method comprising: coating a first photosensitive resin composition on a substrate and curing it to form a first cured film; coating a second photosensitive resin composition on the first cured film and curing it to form a second cured film; and exposing and developing a multilayer cured film including the first cured film and the second cured film to form a pattern and then curing it, wherein the first photosensitive resin composition and the second photosensitive resin composition contain (A) a copolymer; (B) a photopolymerizable compound; (C) a photopolymerization initiator; and (D) a colorant containing a black colorant, wherein the colorant (D) is used in an amount of 1 to 40 parts by weight based on 100 parts by weight of the copolymer (A). A method for preparing a structure for quantum dot barrier ribs as described in claim 11, wherein the curing for forming the first cured film and the second cured film is performed at 70°C to 140°C for 100 seconds to 800 seconds, respectively. A method for preparing a structure for quantum dot barrier ribs as described in claim 12, wherein the curing for forming the first cured film and the second cured film is performed at 70°C to 100°C for 50 seconds to 400 seconds as a pre-bake and at 80°C to 140°C for 100 seconds to 500 seconds as an intermediate bake. A method for preparing a structure for quantum dot barrier ribs as described in claim 11, wherein curing after pattern formation is performed at 150°C to 300°C for 10 minutes to 60 minutes. A method for preparing a structure for quantum dot blocking ribs as described in claim 11, wherein the exposure is performed by setting a mask so that the interval between each pattern is 10 μm to 30 μm and irradiating activating rays. A method for preparing a structure for quantum dot barrier ribs as described in claim 11, wherein the developing is performed for 50 seconds to 300 seconds. A method for preparing a structure for quantum dot blocking ribs as described in claim 11, wherein one or more cured films are further formed on the second cured film. A method for preparing a structure for quantum dot blocking ribs as described in claim 17, wherein each of the multi-layered cured films has a thickness of 8 μm or less, and the multi-layered cured film has a total thickness of 6 μm to 20 μm.