TW201441676A - Black matrix substrate, manufacturing method thereof, color filter substrate, light emitting device, liquid crystal display device, and method of manufacturing color filter - Google Patents
Black matrix substrate, manufacturing method thereof, color filter substrate, light emitting device, liquid crystal display device, and method of manufacturing color filter Download PDFInfo
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- TW201441676A TW201441676A TW103107562A TW103107562A TW201441676A TW 201441676 A TW201441676 A TW 201441676A TW 103107562 A TW103107562 A TW 103107562A TW 103107562 A TW103107562 A TW 103107562A TW 201441676 A TW201441676 A TW 201441676A
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- Taiwan
- Prior art keywords
- light
- shielding layer
- light shielding
- black matrix
- substrate
- Prior art date
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- 239000004408 titanium dioxide Substances 0.000 description 1
- JFLKFZNIIQFQBS-FNCQTZNRSA-N trans,trans-1,4-Diphenyl-1,3-butadiene Chemical group C=1C=CC=CC=1\C=C\C=C\C1=CC=CC=C1 JFLKFZNIIQFQBS-FNCQTZNRSA-N 0.000 description 1
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- 239000012780 transparent material Substances 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
- PWYVVBKROXXHEB-UHFFFAOYSA-M trimethyl-[3-(1-methyl-2,3,4,5-tetraphenylsilol-1-yl)propyl]azanium;iodide Chemical compound [I-].C[N+](C)(C)CCC[Si]1(C)C(C=2C=CC=CC=2)=C(C=2C=CC=CC=2)C(C=2C=CC=CC=2)=C1C1=CC=CC=C1 PWYVVBKROXXHEB-UHFFFAOYSA-M 0.000 description 1
- ODHXBMXNKOYIBV-UHFFFAOYSA-N triphenylamine Chemical compound C1=CC=CC=C1N(C=1C=CC=CC=1)C1=CC=CC=C1 ODHXBMXNKOYIBV-UHFFFAOYSA-N 0.000 description 1
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- PAPBSGBWRJIAAV-UHFFFAOYSA-N ε-Caprolactone Chemical compound O=C1CCCCCO1 PAPBSGBWRJIAAV-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133509—Filters, e.g. light shielding masks
- G02F1/133512—Light shielding layers, e.g. black matrix
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/8791—Arrangements for improving contrast, e.g. preventing reflection of ambient light
- H10K59/8792—Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. black layers
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2202/00—Materials and properties
- G02F2202/36—Micro- or nanomaterials
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/331—Nanoparticles used in non-emissive layers, e.g. in packaging layer
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mathematical Physics (AREA)
- Optical Filters (AREA)
- Electroluminescent Light Sources (AREA)
- Liquid Crystal (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
Abstract
本發明的課題在於提供一種具有充分的光學密度且反射率低的形成有樹脂黑矩陣的樹脂黑矩陣基板。本發明是一種黑矩陣基板,依序包括透明基板、遮光層(A)及遮光層(B),且上述遮光層(A)的每單位厚度的光學密度低於上述遮光層(B)的每單位厚度的光學密度,上述遮光層(A)含有遮光材料及折射率1.4~1.8的微粒子。本發明的黑矩陣基板就其特徵而言可用於彩色濾光片、液晶顯示裝置。An object of the present invention is to provide a resin black matrix substrate on which a resin black matrix is formed, which has a sufficient optical density and a low reflectance. The present invention is a black matrix substrate comprising a transparent substrate, a light shielding layer (A) and a light shielding layer (B) in sequence, and the optical density per unit thickness of the light shielding layer (A) is lower than that of the light shielding layer (B) The optical density per unit thickness, the light shielding layer (A) contains a light shielding material and fine particles having a refractive index of 1.4 to 1.8. The black matrix substrate of the present invention can be used for a color filter or a liquid crystal display device as its characteristics.
Description
本發明是有關於一種可用於液晶顯示裝置或發光裝置(device)中所使用的彩色濾光片(color filter)的黑矩陣(black matrix)基板。 The present invention relates to a black matrix substrate which can be used for a color filter used in a liquid crystal display device or a light emitting device.
液晶顯示裝置呈於兩片基板間夾入有液晶層的構造,利用液晶層的電光學響應而表現明暗,亦可藉由使用彩色濾光片基板而進行彩色顯示。 The liquid crystal display device has a structure in which a liquid crystal layer is interposed between two substrates, and exhibits brightness and darkness by an electro-optical response of the liquid crystal layer, and can be displayed in color by using a color filter substrate.
先前,形成於彩色濾光片基板而成為遮光層的黑矩陣的主流是包含鉻系材料的金屬薄膜,但為了降低成本(cost)或減輕環境汚染,而開發出含有樹脂與遮光材料的樹脂黑矩陣。包括具有樹脂黑矩陣(該樹脂黑矩陣含有碳黑(carbon black)等遮光材料)的彩色濾光片基板的液晶顯示裝置於屋內的視認性優異,但在將其於屋外使用的情況下,由源自黑矩陣的外部光反射引起的視認性的惡化成為問題。 Conventionally, the mainstream of a black matrix which is formed on a color filter substrate to form a light-shielding layer is a metal thin film containing a chromium-based material. However, resin black containing a resin and a light-shielding material has been developed in order to reduce cost or reduce environmental pollution. matrix. A liquid crystal display device including a color filter substrate having a resin black matrix (the resin black matrix contains a light-shielding material such as carbon black) is excellent in visibility in the house, but when it is used outdoors, Deterioration of visibility caused by external light reflection from the black matrix becomes a problem.
基於上述背景,為了達成光學密度(以下有時稱為「OD(optical density)值」)高且自透明基板側觀察的情況下的反射率低的樹脂黑矩陣,而進行各種研究。例如,提出有如下方法:使 用表面經絕緣性物質被覆的黑色著色劑微粒子的方法(專利文獻1)、於氮氧化鈦中添加碳黑的方法(專利文獻2)、使用鈦氮化物與鈦碳化物的混合物的方法(專利文獻3)、設為著色凸紋層與黑色凸紋層的兩層構成的方法(專利文獻4)及設為含有形狀各向異性金屬微粒子的光吸收層與反射光吸收層的兩層構成的方法(專利文獻5)。 In order to achieve a resin black matrix having a high optical density (hereinafter sometimes referred to as "OD (optical density) value) and low reflectance when viewed from the transparent substrate side, various studies have been made. For example, the following method is proposed: A method of using black colorant fine particles coated with an insulating material on the surface (Patent Document 1), a method of adding carbon black to titanium oxynitride (Patent Document 2), and a method using a mixture of titanium nitride and titanium carbide (patent Document 3), a method of forming a two-layer structure of a colored relief layer and a black relief layer (Patent Document 4), and a two-layer structure of a light absorption layer and a reflection light absorption layer containing shape anisotropic metal fine particles Method (Patent Document 5).
[現有技術文獻] [Prior Art Literature]
[專利文獻] [Patent Literature]
專利文獻1:日本專利特開2001-183511號公報 Patent Document 1: Japanese Patent Laid-Open Publication No. 2001-183511
專利文獻2:日本專利特開2006-209102號公報 Patent Document 2: Japanese Patent Laid-Open Publication No. 2006-209102
專利文獻3:日本專利特開2010-95716號公報 Patent Document 3: Japanese Patent Laid-Open Publication No. 2010-95716
專利文獻4:日本專利特開平8-146410號公報 Patent Document 4: Japanese Patent Laid-Open No. Hei 8-146410
專利文獻5:日本專利特開2006-251237號公報 Patent Document 5: Japanese Patent Laid-Open Publication No. 2006-251237
然而,由於高遮光性材料原理上反射率高,故而樹脂黑矩陣極難同時達成充分的光學密度與低反射率。進而,關於將樹脂黑矩陣設為兩層構成的方法,亦有難以遍及整個可見光區域而實現低反射率的問題,另外,因使用金屬微粒子而成為高傳導性,可能產生由電場異常引起的顯示不良。 However, since the high light-shielding material has a high reflectance in principle, it is extremely difficult for the resin black matrix to simultaneously achieve sufficient optical density and low reflectance. Further, the method of forming the resin black matrix into a two-layer structure has a problem that it is difficult to achieve a low reflectance over the entire visible light region, and high conductivity is caused by the use of metal fine particles, and display due to an electric field abnormality may occur. bad.
因此,本發明的目的在於提供一種具有充分的光學密度,且反射率低,進而具有高電阻值且可靠性高的形成有樹脂黑矩陣的黑矩陣基板。 Accordingly, an object of the present invention is to provide a black matrix substrate formed with a resin black matrix having a sufficient optical density and a low reflectance, and further having a high resistance value and high reliability.
本發明提供以下的黑矩陣基板等。 The present invention provides the following black matrix substrate and the like.
(1)一種黑矩陣基板,依序包括透明基板、遮光層(A)及遮光層(B),且 (1) A black matrix substrate comprising, in order, a transparent substrate, a light shielding layer (A), and a light shielding layer (B), and
上述遮光層(A)的每單位厚度的光學密度低於上述遮光層(B)的每單位厚度的光學密度,上述遮光層(A)含有遮光材料及折射率1.4~1.8的微粒子。 The optical density per unit thickness of the light shielding layer (A) is lower than the optical density per unit thickness of the light shielding layer (B), and the light shielding layer (A) contains a light shielding material and fine particles having a refractive index of 1.4 to 1.8.
本發明提供以下的黑矩陣基板作為上述發明的較佳的實施方式。 The present invention provides the following black matrix substrate as a preferred embodiment of the above invention.
(2)如上所述的黑矩陣基板,其中上述折射率1.4~1.8的微粒子為選自由氧化鋁、氧化矽、硫酸鋇、硫酸鈣、碳酸鋇、碳酸鈣、碳酸鎂、碳酸鍶及偏矽酸鈉所組成的組群中的一種以上的微粒子。 (2) The black matrix substrate as described above, wherein the fine particles having a refractive index of 1.4 to 1.8 are selected from the group consisting of alumina, cerium oxide, barium sulfate, calcium sulfate, barium carbonate, calcium carbonate, magnesium carbonate, barium carbonate, and metafluoric acid. More than one type of microparticles in a group consisting of sodium.
(3)如上述任一項所述的黑矩陣基板,其中上述折射率1.4~1.8的微粒子利用依據JIS P8148(2001)的方法測定的白度為30%以上。 (3) The black matrix substrate according to any one of the preceding claims, wherein the fine particles having a refractive index of 1.4 to 1.8 have a whiteness of 30% or more as measured by a method according to JIS P8148 (2001).
(4)如上述任一項所述的黑矩陣基板,其中上述透明基板包含聚醯亞胺樹脂。 (4) The black matrix substrate according to any of the above, wherein the transparent substrate comprises a polyimide resin.
另外,本發明提供使用如上所述的黑矩陣基板的以下者。 Further, the present invention provides the following using the black matrix substrate as described above.
(5)一種彩色濾光片基板,其中如上述任一項所述的黑矩陣基板的遮光層(A)及遮光層(B)具有圖案(pattern)形狀,且於不存在圖案的部分存在經著色的畫素。 (5) A color filter substrate, wherein the light shielding layer (A) and the light shielding layer (B) of the black matrix substrate according to any one of the above-mentioned items have a pattern shape, and a portion having no pattern exists Colored pixels.
(6)一種發光裝置,包括如上所述的彩色濾光片基板及發光元件。 (6) A light-emitting device comprising the color filter substrate and the light-emitting element as described above.
(7)如上所述的發光裝置,其中上述發光元件為有機電致發光(electroluminescence,EL)元件。 (7) The light-emitting device as described above, wherein the light-emitting element is an organic electroluminescence (EL) element.
(8)一種液晶顯示裝置,包括上述彩色濾光片基板、液晶化合物及對向基板。 (8) A liquid crystal display device comprising the above color filter substrate, a liquid crystal compound, and a counter substrate.
另外,如下所述,本發明提供一種用以製造如上所述的黑矩陣基板及彩色濾光片的較佳的方法。 Further, as described below, the present invention provides a preferred method for manufacturing the black matrix substrate and the color filter as described above.
(9)一種黑矩陣基板的製造方法,包括如下步驟:於透明基板的上方,形成含有遮光材料及樹脂的組成物的層的步驟;於其上方形成含有遮光材料的感光性樹脂組成物的層的步驟;進行圖案曝光,藉由顯影液或溶劑對上述兩種層進行圖案加工的步驟。 (9) A method for producing a black matrix substrate, comprising the steps of: forming a layer containing a composition of a light-shielding material and a resin on a transparent substrate; and forming a layer of a photosensitive resin composition containing a light-shielding material thereon a step of patterning, patterning the above two layers by a developer or a solvent.
(10)一種彩色濾光片的製造方法,包括在藉由如上所述的方法製造黑矩陣基板後,於不存在圖案的部分設置畫素的步驟。 (10) A method of manufacturing a color filter comprising the step of disposing a pixel in a portion where no pattern is present after the black matrix substrate is manufactured by the method as described above.
根據本發明的黑矩陣基板,遮光層可實現以不使背光(back light)的光透過為目的之充分的遮光性,從而可獲得不僅可獲得高對比度(contrast)且清晰的圖像,而且由於反射率低,故而即便於外部光下視認性亦極為優異,且電氣可靠性高的液晶 顯示裝置。 According to the black matrix substrate of the present invention, the light shielding layer can achieve sufficient light blocking property for the purpose of not transmitting light of a backlight, so that it is possible to obtain not only a high contrast and sharp image but also Low reflectivity, so it is extremely excellent in visibility under external light and has high electrical reliability. Display device.
10‧‧‧透明基板 10‧‧‧Transparent substrate
11‧‧‧樹脂BM(樹脂黑矩陣) 11‧‧‧Resin BM (Resin Black Matrix)
20‧‧‧彩色濾光片基板 20‧‧‧Color filter substrate
21‧‧‧遮光層(A) 21‧‧‧Lighting layer (A)
22‧‧‧遮光層(B) 22‧‧‧Lighting layer (B)
23、24、25‧‧‧畫素 23, 24, 25‧ ‧ pixels
26‧‧‧保護膜 26‧‧‧Protective film
28‧‧‧透明電極 28‧‧‧Transparent electrode
29‧‧‧有機EL層 29‧‧‧Organic EL layer
30‧‧‧背面電極層 30‧‧‧Back electrode layer
31‧‧‧絕緣膜 31‧‧‧Insulation film
32‧‧‧基板 32‧‧‧Substrate
33‧‧‧提取电极 33‧‧‧Extraction electrode
34‧‧‧密封劑 34‧‧‧Sealant
40‧‧‧有機EL元件 40‧‧‧Organic EL components
L1、L2、L3‧‧‧線寬 L1, L2, L3‧‧‧ line width
圖1(a)~圖1(e)是表示本發明的黑矩陣基板的若干實施方式的概略剖面圖。 1(a) to 1(e) are schematic cross-sectional views showing a plurality of embodiments of a black matrix substrate of the present invention.
圖2是表示本發明的黑矩陣基板的一實施方式的概略剖面圖。 Fig. 2 is a schematic cross-sectional view showing an embodiment of a black matrix substrate of the present invention.
圖3是表示本發明的發光裝置的一實施方式的概略剖面圖。 Fig. 3 is a schematic cross-sectional view showing an embodiment of a light-emitting device of the present invention.
本發明的黑矩陣基板的特徵在於:依序包括形成於透明基板上的遮光層(A)及遮光層(B),且遮光層(A)的每單位厚度的光學密度低於遮光層(B)的每單位厚度的光學密度,遮光層(A)含有遮光材料及折射率1.4~1.8的微粒子。 The black matrix substrate of the present invention is characterized in that the light shielding layer (A) and the light shielding layer (B) formed on the transparent substrate are sequentially included, and the optical density per unit thickness of the light shielding layer (A) is lower than that of the light shielding layer (B). The optical density per unit thickness of the light-shielding layer (A) contains a light-shielding material and fine particles having a refractive index of 1.4 to 1.8.
通常,已知樹脂黑矩陣(以下,稱為「樹脂BM」)的每單位厚度的光學密度(將光學密度除以厚度所得的值。以下,稱為「OD/T」)越大,反射率越高。其因下述理由。 In general, the optical density per unit thickness of the resin black matrix (hereinafter referred to as "resin BM") (the value obtained by dividing the optical density by the thickness, hereinafter referred to as "OD/T") is larger, and the reflectance is known. The higher. It is for the following reasons.
通常,在相對的兩種無色透明的物質接觸的情況下,入射至其界面的光的反射率R可如下述數式(1)般以折射率差表示。 In general, in the case where the two opposite colorless transparent substances are in contact, the reflectance R of the light incident on the interface thereof can be expressed by the refractive index difference as shown in the following formula (1).
反射率R=(n1-n2)2/(n1+n2)2 (1) Reflectance R = (n 1 - n 2 ) 2 / (n 1 + n 2 ) 2 (1)
(此處,n1、n2分別表示任意的無色透明物質n1、n2的折射率) (here, n 1 and n 2 respectively represent refractive indices of arbitrary colorless transparent substances n 1 and n 2 )
另一方面,在金屬等非無色透明的物質的情況下,折射率必須以複折射率(complex refractive index)表示, 使用複折射率N=n-iκ(n表示物質n的折射率的實數部,κ表示消光係數)。在無色透明的物質m與非無色透明的物質n接觸的情況下,自物質m側垂直入射至其界面的光的反射率R可如下述數式(2)般表示。 On the other hand, in the case of a substance such as a metal which is not colorless and transparent, the refractive index must be expressed by a complex refractive index. The complex refractive index N = n - iκ is used (n represents the real part of the refractive index of the substance n, and κ represents the extinction coefficient). In the case where the colorless transparent substance m is in contact with the non-colorless transparent substance n, the reflectance R of light incident perpendicularly from the substance m side to the interface thereof can be expressed by the following formula (2).
反射率R={(m-n)2+κ2}/{(m+n)2+κ2} (2) Reflectance R={(mn) 2 +κ 2 }/{(m+n) 2 +κ 2 } (2)
(此處,m表示無色透明的物質m的折射率,n表示物質n的折射率的實數部,κ表示物質n的消光係數) (here, m represents the refractive index of the colorless transparent substance m, n represents the real part of the refractive index of the substance n, and κ represents the extinction coefficient of the substance n)
依據該數式(2)可知,消光係數κ越大,反射率越大。此外,在假設消光係數κ為0、即物質n為無色透明的情況下,成為與數式(1)相同的結果。 According to the equation (2), the larger the extinction coefficient κ, the larger the reflectance. Further, when the extinction coefficient κ is 0, that is, when the substance n is colorless and transparent, the result is the same as the formula (1).
且說,消光係數與某波長下的吸光係數α成比例。另外,吸光係數α可近似於將OD/T乘以常數所得的數值。即,消光係數κ與OD/T的值成比例,若使用數式(2),則可知OD/T越大,原理上物質m與物質n的界面的反射率R越高。 Moreover, the extinction coefficient is proportional to the absorption coefficient α at a certain wavelength. In addition, the absorption coefficient α can be approximated by a value obtained by multiplying OD/T by a constant. That is, the extinction coefficient κ is proportional to the value of OD/T, and when the formula (2) is used, it is understood that the larger the OD/T is, the higher the reflectance R of the interface between the substance m and the substance n is.
本發明者等人推測,使上述數式(2)的物質m相當於透明基板,使物質n相當於樹脂BM,作為樹脂BM的特性而被要求的低反射率與高遮光性在一定的膜厚條件下處於取捨(trade-off)的關係。為了低反射化而有效的是減小OD/T,但該情況下,為了確保充分的遮光性而必須增大黑矩陣的膜厚。膜厚大的黑矩陣會導致液晶的配向紊亂而使對比度降低。因此,為了解決該取捨而進行努力研究,結果認為於透明基板的上方依序包括OD/T小的層、即可稱為低光學密度層的遮光層(A)、及OD/T 大於遮光層(A)的層、即可稱為高光學密度層的遮光層(B)的黑矩陣基板適合於課題的解決。此外,此處所謂的「遮光層」並不限於將光遮斷100%的層。根據該黑矩陣基板的構成,遮光層(A)具有相對低的OD/T,因此對來自透明基板側的光,遮光層(A)的透明基板側的界面上的反射減少。於遮光層(A)中光亦衰減,因此遮光層(B)的遮光層(A)側的界面上的光的反射量亦減少。其結果,本發明的黑矩陣基板的反射率降低。進而由於具有遮光層(B),故而對透射遮光層(B)而來的光可具有充分的遮光性。即,推測藉由此種黑矩陣基板的構成,對來自透明基板側的光,可同時實現低反射與充分的遮光性。 The inventors of the present invention have estimated that the substance m of the above formula (2) corresponds to a transparent substrate, and the substance n corresponds to the resin BM, and a low reflectance and a high light-shielding property which are required as characteristics of the resin BM are constant. Under a thick condition, it is in a trade-off relationship. It is effective to reduce OD/T for low reflection, but in this case, it is necessary to increase the film thickness of the black matrix in order to secure sufficient light shielding properties. A black matrix having a large film thickness causes alignment disorder of the liquid crystal to lower the contrast. Therefore, in order to solve this trade-off, it is considered that a layer having a small OD/T, a light-shielding layer (A) which can be called a low-optical density layer, and an OD/T are sequentially included on the transparent substrate. A black matrix substrate having a layer larger than the light shielding layer (A) and a light shielding layer (B) which can be called a high optical density layer is suitable for solving the problem. Further, the term "light shielding layer" as used herein is not limited to a layer that blocks light by 100%. According to the configuration of the black matrix substrate, since the light shielding layer (A) has a relatively low OD/T, reflection on the transparent substrate side at the interface on the transparent substrate side of the light shielding layer (A) is reduced. Since the light is also attenuated in the light shielding layer (A), the amount of reflection of light at the interface on the side of the light shielding layer (A) of the light shielding layer (B) is also reduced. As a result, the reflectance of the black matrix substrate of the present invention is lowered. Further, since the light shielding layer (B) is provided, the light transmitted through the light shielding layer (B) can have sufficient light blocking properties. In other words, it is estimated that the light from the side of the transparent substrate can simultaneously achieve low reflection and sufficient light blocking property by the configuration of such a black matrix substrate.
但是,根據本發明者等人的研究判明,若僅設為如上所述的構成,則使自透明基板側入射的光透過OD/T小的層,且於OD/T大的層的OD/T小的層側的界面上發生反射,而實現所需的樹脂BM的低反射化並不簡單。因此,本發明者等人發現,對於具有此種構成的黑矩陣基板,藉由使上述OD/T小的層含有遮光材料及折射率1.4~1.8的微粒子,可同時實現充分的遮光性與低反射,從而完成了本發明。 However, according to the study by the inventors of the present invention, it has been found that when the configuration is as described above, the light incident from the transparent substrate side is transmitted through the layer having a small OD/T and the OD of the layer having a large OD/T. Reflection occurs at the interface of the small layer side of T, and it is not simple to achieve low reflection of the resin BM required. Therefore, the inventors of the present invention have found that a black matrix substrate having such a configuration can simultaneously achieve sufficient light-shielding properties and low lightness by including a light-shielding material and fine particles having a refractive index of 1.4 to 1.8 in a layer having a small OD/T. Reflection, thereby completing the present invention.
本發明的遮光層(A)為光學密度不為0而實質上不透明的層構成,且其OD/T小於遮光層(B)的OD/T。另外,本發明的遮光層(B)為光學密度不為0而實質上不透明的層構成。此外,本發明中所謂的OD值是採用於波長380nm~700nm的區域使用 The light shielding layer (A) of the present invention has a layer structure in which the optical density is not zero and is substantially opaque, and its OD/T is smaller than the OD/T of the light shielding layer (B). Further, the light shielding layer (B) of the present invention has a layer structure in which the optical density is not zero and is substantially opaque. Further, the so-called OD value in the present invention is used in a region having a wavelength of 380 nm to 700 nm.
OD值=log10(I0/I) OD value = log 10 (I 0 /I)
I0:入射光強度 I 0 : incident light intensity
I:透射光強度 I: transmitted light intensity
以5nm為單位而求得的值的平均值。 The average value of the values obtained in units of 5 nm.
<<遮光層(A)>> <<Light shielding layer (A)>>
<光學密度> <optical density>
遮光層(A)的OD/T較佳為0.5μm-1以上,進而較佳為1μm-1以上。另外,該值較佳為3μm-1以下,進而較佳為2.5μm-1以下。若該值過小,則為了使積層的樹脂BM獲得所需的OD值而必須增大膜厚。若該值過大,則有反射率變高的傾向。遮光層(B)的OD/T較佳為3μm-1以上,進而較佳為3.5μm-1以上。另外,更佳為8μm-1以下,進而更佳為6μm-1以下。若該值過小,則為了使樹脂BM獲得所需的OD值而必須使膜厚變得過厚,若該值大,則必須增多遮光材料的添加量,而有圖案加工變得困難的情況。 The OD/T of the light shielding layer (A) is preferably 0.5 μm -1 or more, and more preferably 1 μm -1 or more. Further, the value is preferably 3 μm -1 or less, and more preferably 2.5 μm -1 or less. If the value is too small, the film thickness must be increased in order to obtain the desired OD value of the laminated resin BM. If the value is too large, the reflectance tends to be high. The OD/T of the light shielding layer (B) is preferably 3 μm -1 or more, and more preferably 3.5 μm -1 or more. Further, it is more preferably 8 μm -1 or less, still more preferably 6 μm -1 or less. If the value is too small, the film thickness must be made too thick in order to obtain the desired OD value of the resin BM. If the value is large, the amount of the light shielding material to be added must be increased, and pattern processing becomes difficult.
本發明的黑矩陣基板中所存在的遮光層整體的OD值較佳為3以上,進而較佳為4以上。另外,更佳為6以下,進而更佳為5以下。若整體的OD值過低,則有背光的光的一部分透射而使對比度降低的情況。另一方面,若過高,則不僅遮光層(B)而且遮光層(A)的遮光材料的添加量亦必須增加,在製成所需的膜厚的情況下,有反射率變高的傾向。 The OD value of the entire light shielding layer present in the black matrix substrate of the present invention is preferably 3 or more, and more preferably 4 or more. Further, it is more preferably 6 or less, still more preferably 5 or less. When the overall OD value is too low, a part of the light having the backlight is transmitted to lower the contrast. On the other hand, if it is too high, the amount of the light shielding material added to the light shielding layer (B) and the light shielding layer (A) must be increased, and the reflectance tends to be high when the desired film thickness is formed. .
遮光層(A)的OD值較佳為0.5以上,進而較佳為0.8 以上,且較佳為2.0以下,進而較佳為1.5以下。遮光層(B)的OD值更佳為1.5以上,進而更佳為2.0以上,另一方面,更佳為5.0以下,進而更佳為3.5以下。 The OD value of the light shielding layer (A) is preferably 0.5 or more, and further preferably 0.8. The above is preferably 2.0 or less, and more preferably 1.5 or less. The OD value of the light shielding layer (B) is more preferably 1.5 or more, still more preferably 2.0 or more, and more preferably 5.0 or less, and still more preferably 3.5 or less.
<微粒子> <microparticle>
本發明中所謂的微粒子較佳為實質上未著色而為淡色、透明或白色的微粒子。關於黑色顏料、或紅、藍、綠、紫、黃色、洋紅色(magenta)或青色(cyan)等的顏料,分類為後文敍述的遮光材料。 The fine particles in the present invention are preferably fine particles which are substantially uncolored and are pale, transparent or white. Regarding the black pigment, or a pigment such as red, blue, green, purple, yellow, magenta or cyan, it is classified into a light-shielding material described later.
微粒子的成分除填充顏料或白色顏料等白色微粒子以外,亦可列舉各種陶瓷(ceramic)、各種樹脂等。但是,如上所述,折射率必須為1.4~1.8。 The components of the fine particles may be various kinds of ceramics, various resins, and the like in addition to white fine particles such as a pigment or a white pigment. However, as mentioned above, the refractive index must be 1.4 to 1.8.
此處所謂的微粒子的折射率是指可見光下的折射率,可採用相當於鈉D射線的波長589nm下的折射率的值作為代表值。折射率的測定方法可將微粒子本身或與微粒子為相同組成的物質設為試樣,使用液浸法即貝克線法(Becke's line method)進行測定。利用貝克線法求算折射率的方法可準備30個與目標微粒子相同的物質的樣品(sample),測定每一個的折射率後,藉由它們的平均值算出折射率。 Here, the refractive index of the fine particles means a refractive index under visible light, and a value corresponding to a refractive index at a wavelength of 589 nm of sodium D rays can be used as a representative value. The method of measuring the refractive index can be carried out by using a microparticle or a substance having the same composition as the microparticles as a sample, and measuring it by a liquid immersion method, that is, a Becke's line method. A method of calculating the refractive index by the Becker line method can prepare 30 samples of the same substance as the target fine particles, measure the refractive index of each, and calculate the refractive index from the average value thereof.
本發明中所使用的微粒子的折射率必須為1.4~1.8,較佳為1.5~1.7。所謂折射率低,是指原理上構成微粒子的物質的密度降低。因此,此種低密度的粒子有容易被於形成遮光層時用作分散介質的有機溶劑腐蝕的問題。進而完成的黑矩陣基板的耐溶 劑性變得不充分。另一方面,若折射率過高,則遮光層(A)的折射率與透明基板相比變得過大,因此遮光層(A)的透明基板側的表面上的反射增大,結果有黑矩陣基板的反射變高的傾向。推測,根據本發明的構成,藉由使具有上述範圍的折射率的微粒子分散於OD/T小的層,可將入射光因微粒子而散射的影響抑制為最小限度,並且可使OD/T小的層的折射率成為接近透明基板的值,從而與利用遮光材料的遮光效果相結合而使反射光衰減。 The fine particles used in the present invention must have a refractive index of from 1.4 to 1.8, preferably from 1.5 to 1.7. The low refractive index means that the density of the substance constituting the fine particles in principle is lowered. Therefore, such low-density particles have a problem that they are easily corroded by an organic solvent used as a dispersion medium in forming a light-shielding layer. Further complete processing of the black matrix substrate The agent properties become insufficient. On the other hand, when the refractive index is too high, the refractive index of the light shielding layer (A) becomes too large as compared with the transparent substrate, so that the reflection on the surface of the light shielding layer (A) on the transparent substrate side is increased, and as a result, there is a black matrix. The reflection of the substrate tends to be high. It is presumed that, according to the configuration of the present invention, by dispersing fine particles having a refractive index in the above range in a layer having a small OD/T, the influence of scattering of incident light by fine particles can be suppressed to a minimum, and OD/T can be made small. The refractive index of the layer becomes a value close to the transparent substrate, and the reflected light is attenuated in combination with the light shielding effect by the light shielding material.
作為折射率1.4~1.8的微粒子,具體而言,可列舉:丙烯酸系樹脂或聚乙烯樹脂、矽酮微粒子、氟樹脂等樹脂製的微粒子。作為市售品,丙烯酸系樹脂微粒子可列舉:日本塗料(Nippon Paint)製造的FS-101、FS102、FS106、FS-107、FS-201、FS-301、FS-501、FS-701、MG-155E、MG-451、MG-351,東洋紡製造的「TAFTIC」(註冊商標)F-120、F-167等。 Specific examples of the fine particles having a refractive index of 1.4 to 1.8 include fine particles of a resin such as an acrylic resin, a polyethylene resin, an anthrone fine particle, or a fluororesin. As a commercially available product, examples of the acrylic resin fine particles include FS-101, FS102, FS106, FS-107, FS-201, FS-301, FS-501, FS-701, and MG- manufactured by Nippon Paint. 155E, MG-451, MG-351, "TAFTIC" (registered trademark) F-120, F-167, etc. manufactured by Toyobo.
如上所述,可用於本發明的微粒子較佳為實質上未著色而為淡色、透明或白色的微粒子,較佳為白色微粒子。具有1.4~1.8的折射率的微粒子例如可列舉:滑石(talc)、雲母(mica)或高嶺土(kaolin clay)等礦物,氧化鋁(alumina)或氧化矽(silica)等氧化物,硫酸鋇或硫酸鈣等硫酸鹽,碳酸鋇、碳酸鈣、碳酸鎂或碳酸鍶等碳酸鹽,偏矽酸鈉或硬脂酸鈉,但就電氣可靠性的觀點而言,較佳為選自由氧化鋁、氧化矽、硫酸鋇、硫酸鈣、碳酸鋇、碳酸鈣、碳酸鎂、碳酸鍶及偏矽酸鈉所組成的組群中的物質,更佳為硫酸鋇。此外,市售的硫酸鋇例如可列舉:「BARIFINE」(註 冊商標)BF-10、BF-1、BF-20或BF-40(以上均為堺化學工業公司製造)。本發明的折射率1.4~1.8的微粒子利用依據JIS P8148(2001)的方法測定的白度較佳為30%以上,進而較佳為50%以上。於微粒子的白度的測定中,以使白度成為一定的值的方式對微粒子充分地施加壓力而將其填充至測定容器中進行測定。此外,本段落所示的上述微粒子均為白度為30%以上的微粒子。 As described above, the fine particles which can be used in the present invention are preferably fine particles which are substantially uncolored and are pale, transparent or white, and are preferably white fine particles. Examples of the fine particles having a refractive index of 1.4 to 1.8 include minerals such as talc, mica or kaolin clay, oxides such as alumina or silica, barium sulfate or sulfuric acid. a sulfate such as calcium, a carbonate such as barium carbonate, calcium carbonate, magnesium carbonate or barium carbonate, sodium metasilicate or sodium stearate, but from the viewpoint of electrical reliability, it is preferably selected from alumina and barium oxide. The substance in the group consisting of barium sulfate, calcium sulfate, barium carbonate, calcium carbonate, magnesium carbonate, barium carbonate and sodium metasilicate, more preferably barium sulfate. Further, commercially available barium sulfate can be exemplified by "BARIFINE" (Note) Registered trademark) BF-10, BF-1, BF-20 or BF-40 (all of which are manufactured by 堺Chemical Industries, Ltd.). The fineness of the fine particles having a refractive index of 1.4 to 1.8 of the present invention measured by the method according to JIS P8148 (2001) is preferably 30% or more, and more preferably 50% or more. In the measurement of the whiteness of the fine particles, the fine particles are sufficiently pressurized so that the whiteness becomes a constant value, and the measurement is carried out by filling the measurement container with a pressure. Further, the above fine particles shown in this paragraph are fine particles having a whiteness of 30% or more.
微粒子的形狀並無特別限定,例如可列舉:球狀、橢球 狀、針狀、多邊形狀、星型狀或表面具有凹凸或孔隙的形狀、或者中空的形狀。 The shape of the fine particles is not particularly limited, and examples thereof include a spherical shape and an ellipsoidal shape. Shape, needle shape, polygonal shape, star shape or surface having a shape of irregularities or pores, or a hollow shape.
微粒子的粒徑較佳為1μm以下,較佳為5nm~500 nm,進而較佳為10nm~100nm。若微粒子的粒徑過小,則有分散穩定化變得困難的傾向。另一方面,若過大,則有光的散射增大而反射率變高的傾向。此處,微粒子的粒徑是指微粒子的一次粒徑。微粒子的一次粒徑可藉由如下方式而算出:利用電子顯微鏡分別觀察隨機選擇的100個微粒子的一次粒徑,並求出其平均值。在形狀為球形以外的情況下,可藉由如下方式而算出:計算利用電子顯微鏡對某一個粒子進行觀察所得的最大的寬度與最小的寬度的平均值作為該粒子的一次粒徑,並求出100個的一次粒徑的平均值。如上所述的粒徑的微粒子較佳為於低光學密度層中所含的微粒子中含有90質量%以上。 The particle diameter of the fine particles is preferably 1 μm or less, preferably 5 nm to 500. Nm, and further preferably 10 nm to 100 nm. When the particle diameter of the fine particles is too small, dispersion stabilization tends to be difficult. On the other hand, if it is too large, the scattering of light will increase and the reflectance will become high. Here, the particle diameter of the fine particles means the primary particle diameter of the fine particles. The primary particle diameter of the fine particles can be calculated by observing the primary particle diameters of 100 randomly selected microparticles by an electron microscope and obtaining the average value thereof. When the shape is other than the spherical shape, it can be calculated by calculating the average value of the maximum width and the minimum width obtained by observing a certain particle by an electron microscope as the primary particle diameter of the particle, and obtaining The average of 100 primary particle sizes. The fine particles having a particle diameter as described above preferably contain 90% by mass or more of the fine particles contained in the low optical density layer.
微粒子的製造方法例如可列舉:將成為原料的礦物等物 質粉碎而微細化的粉碎法、氣相、液相或固層下的化學方法或物 理方法。粉碎法例如可列舉:噴射法(jet method)、鎚擊法(hammer method)或研磨法(mill method)。氣相下的化學方法例如可列舉:化學蒸鍍法(化學氣相沈積(Chemical Vapor Deposition,CVD)法)、電爐法、化學火焰法或電漿(plasma)法。液相下的化學方法例如可列舉:沈澱法、烷氧化物法或水熱法。固相下的化學方法例如可列舉晶析法。物理方法例如可列舉噴霧法、溶液燃燒法或冷凍乾燥法。其中,由於可容易地控制微粒子的粒徑,故而較佳為沈澱法。 Examples of the method for producing the fine particles include minerals and the like which are raw materials. a pulverization method, a gas phase, a liquid phase, or a chemical method or substance under a solid layer Method. Examples of the pulverization method include a jet method, a hammer method, or a mill method. Examples of the chemical method in the gas phase include a chemical vapor deposition method (Chemical Vapor Deposition (CVD) method), an electric furnace method, a chemical flame method, or a plasma method. The chemical method in the liquid phase may, for example, be a precipitation method, an alkoxide method or a hydrothermal method. The chemical method in the solid phase is exemplified by a crystallization method. Examples of the physical method include a spray method, a solution combustion method, and a freeze drying method. Among them, since the particle diameter of the fine particles can be easily controlled, the precipitation method is preferred.
<遮光層(A)的組成> <Composition of light shielding layer (A)>
本發明的黑矩陣基板中的遮光層(A)含有遮光材料、折射率1.4~1.8的微粒子,較佳為更含有樹脂。 The light-shielding layer (A) in the black matrix substrate of the present invention contains a light-shielding material and fine particles having a refractive index of 1.4 to 1.8, and more preferably contains a resin.
遮光材料例如可列舉:黑色有機顏料、混色有機顏料及無機顏料。黑色有機顏料例如可列舉:碳黑、經樹脂被覆的碳黑、苝黑(perylene black)或苯胺黑(aniline black)。混色有機顏料例如可列舉混合紅、藍、綠、紫、黃色、洋紅色或青色等的顏料並擬黑色化而成的顏料。無機顏料例如可列舉石墨(graphite)。其他例子可列舉:鈦、銅、鐵、錳、鈷、鉻、鎳、鋅、鈣或銀等金屬微粒子。另外,可列舉上文所示的金屬的氧化物、複合氧化物、硫化物、氮化物及碳化物。較佳為選自氧化鈦經氮還原的氮氧化鈦、即鈦黑(titanium black)、氮化鈦、碳化鈦及碳黑中的一種以上。其中,更佳為氮氧化鈦。 Examples of the light-shielding material include black organic pigments, mixed color organic pigments, and inorganic pigments. Examples of the black organic pigment include carbon black, resin-coated carbon black, perylene black, or aniline black. The mixed color organic pigment may, for example, be a pigment obtained by mixing a pigment such as red, blue, green, purple, yellow, magenta or cyan and being blackened. Examples of the inorganic pigment include graphite. Other examples include metal fine particles such as titanium, copper, iron, manganese, cobalt, chromium, nickel, zinc, calcium or silver. Further, examples thereof include oxides, composite oxides, sulfides, nitrides, and carbides of the metals described above. It is preferably one or more selected from the group consisting of titanium oxynitride reduced by nitrogen, that is, titanium black, titanium nitride, titanium carbide, and carbon black. Among them, more preferred is titanium oxynitride.
此處所謂的氮氧化鈦是指TiNxOy(0<x<2.0,0.1<y <2.0)所表示的化合物,但若氧的含量多,則黑色度降低,因此x/y較佳為0.1~10,更佳為1~3。 The term "titanium oxynitride" as used herein means a compound represented by TiN x O y (0 < x < 2.0, 0.1 < y < 2.0). However, if the content of oxygen is large, the degree of blackness is lowered, so x/y is preferably 0.1~10, more preferably 1~3.
遮光材料的粒徑較佳為10nm~300nm,更佳為30nm ~100nm。此處所謂的遮光材料的粒徑是指遮光材料的一次粒徑。遮光材料的一次粒徑可藉由與微粒子的情況相同的方法而算出。若遮光材料的粒徑過大,則有微細的圖案加工變得困難的傾向。另一方面,若粒徑過小,則有遮光材料的粒子凝聚而反射率變高的傾向。 The particle size of the light shielding material is preferably from 10 nm to 300 nm, more preferably 30 nm. ~100nm. The particle diameter of the light-shielding material herein means the primary particle diameter of the light-shielding material. The primary particle diameter of the light-shielding material can be calculated by the same method as in the case of the fine particles. When the particle size of the light-shielding material is too large, fine pattern processing tends to be difficult. On the other hand, when the particle diameter is too small, particles of the light-shielding material aggregate and the reflectance tends to be high.
遮光材料於遮光層(A)中所佔的比率較佳為5質量% 以上,進而較佳為10質量%以上。另外,其比率為80質量%以下,進而較佳為50質量%以下。若遮光材料的比率少,則難以獲得充分的光學密度。另一方面,若遮光材料的比率多,則有遮光層(A)的圖案化(patterning)變得困難的情況。 The ratio of the light-shielding material in the light-shielding layer (A) is preferably 5% by mass. The above is further preferably 10% by mass or more. Further, the ratio thereof is 80% by mass or less, and more preferably 50% by mass or less. If the ratio of the light shielding material is small, it is difficult to obtain a sufficient optical density. On the other hand, when the ratio of the light shielding material is large, patterning of the light shielding layer (A) may become difficult.
微粒子於遮光層(A)中所佔的比率較佳為1質量%以 上,進而較佳為10質量%以上。另外,其比率較佳為60質量%以下,進而更佳為50質量%以下。若微粒子的比率過小,則有本發明的效果不充分的情況。另一方面,若微粒子的比率過大,則有圖案化變得困難的傾向。 The ratio of the fine particles in the light shielding layer (A) is preferably 1% by mass. Further, it is preferably 10% by mass or more. Further, the ratio thereof is preferably 60% by mass or less, and more preferably 50% by mass or less. If the ratio of the fine particles is too small, the effect of the present invention may be insufficient. On the other hand, if the ratio of the fine particles is too large, patterning tends to be difficult.
遮光層(A)可含有的樹脂的比率較佳為10質量%以上, 進而較佳為30質量%以上。另外,其比率較佳為90質量%以下,進而較佳為70質量%以下。 The ratio of the resin which the light shielding layer (A) may contain is preferably 10% by mass or more. Further, it is preferably 30% by mass or more. Further, the ratio thereof is preferably 90% by mass or less, and more preferably 70% by mass or less.
樹脂於波長589nm下的折射率較佳為1.4~1.8,更佳為 1.5~1.7。例如可列舉:環氧樹脂、丙烯酸系樹脂、矽氧烷聚合物系樹脂或聚醯亞胺樹脂。上述樹脂之中,由於塗膜的耐熱性高,故而較佳為丙烯酸系樹脂或聚醯亞胺樹脂,更佳為聚醯亞胺樹脂。此處所謂的聚醯亞胺樹脂,除具有完全已閉環結構的聚醯亞胺樹脂以外,亦包含作為聚醯亞胺樹脂的前驅物的聚醯胺酸及聚醯胺酸的一部分閉環而成的聚醯亞胺樹脂。 The refractive index of the resin at a wavelength of 589 nm is preferably from 1.4 to 1.8, more preferably 1.5~1.7. For example, an epoxy resin, an acrylic resin, a siloxane oxide resin, or a polyimine resin can be mentioned. Among the above resins, since the heat resistance of the coating film is high, an acrylic resin or a polyimide resin is preferable, and a polyimide resin is more preferable. The polyimine resin referred to herein includes, in addition to a polyimine resin having a completely closed-loop structure, a closed loop of a polyamic acid and a poly-proline which is a precursor of a polyimide resin. Polyimine resin.
聚醯亞胺樹脂可藉由將作為前驅物的聚醯胺酸加熱閉 環醯亞胺化而形成。聚醯胺酸通常可藉由使具有酸酐基的化合物與二胺化合物於40℃~100℃下進行加成聚合而獲得。具有下述通式(1)所表示的重複結構單元。聚醯胺酸的一部分閉環而成的聚醯亞胺樹脂具有下述通式(2)所表示的醯胺酸結構、醯胺酸結構的一部分進行醯亞胺閉環而成的下述通式(3)所表示的結構、及醯胺酸結構全部進行醯亞胺閉環而成的下述通式(4)所表示的醯亞胺結構。 Polyimine resin can be heated and closed by using polyglycine as a precursor The cyclic oxime is imidized to form. Polylysine can be usually obtained by subjecting a compound having an acid anhydride group to a diamine compound by addition polymerization at 40 ° C to 100 ° C. It has a repeating structural unit represented by the following general formula (1). The polyimine resin in which a part of the polyamic acid is ring-closed has a proline structure represented by the following formula (2), and a part of the structure of the proline which is subjected to ring closure of the quinone imine (the following formula) 3) The quinone imine structure represented by the following general formula (4) in which the structure and the proline structure are all closed by a ruthenium ring.
[化2]
上述通式(1)~通式(4)中,R1表示碳數2~22的三 價或四價的有機基,R2表示碳數1~22的二價的有機基,n表示1或2的整數。 In the above formula (1) to formula (4), R 1 represents a trivalent or tetravalent organic group having 2 to 22 carbon atoms, R 2 represents a divalent organic group having 1 to 22 carbon atoms, and n represents 1; Or an integer of 2.
就提高聚醯亞胺樹脂的耐熱性及絕緣性而言,用以獲得 聚醯胺酸的二胺化合物較佳為芳香族系二胺化合物,具有酸酐基的化合物較佳為酸二酐。 In order to improve the heat resistance and insulation properties of the polyimide resin, The diamine compound of polyglycine is preferably an aromatic diamine compound, and the compound having an acid anhydride group is preferably an acid dianhydride.
芳香族系二胺化合物例如可列舉:對苯二胺、間苯二 胺、3,3'-二胺基二苯醚、4,4'-二胺基二苯醚、3,4'-二胺基二苯醚、4,4'-二胺基二苯基甲烷、3,3'-二胺基二苯基碸、4,4'-二胺基二苯基碸、3,3'-二胺基二苯基硫醚、4,4'-二胺基二苯基硫醚、1,3-雙(4-胺基苯氧基)苯、1,4-雙(4-胺基苯氧基)苯、2,2-雙(三氟甲基)聯苯胺、9,9'-雙(4-胺基苯基)茀4,4'-二胺基二苯基胺、3,4'-二胺基二苯基胺、3,3'-二胺基二苯基胺、2,4'-二胺基二苯基胺、4,4'-二胺基二苄胺、2,2'-二胺基二苄胺、3,4'-二胺基二苄胺、3,3'-二胺基二苄胺、N,N'-雙-(4-胺基-3-甲基苯基)乙二胺、4,4'-二胺基苯甲醯苯胺、3,4'-二胺基苯甲醯苯胺、3,3'-二胺基苯甲醯苯胺、4,3'-二胺基苯甲醯苯胺、2,4'-二胺基苯甲醯苯胺、N,N'-對伸苯基雙對胺基苯甲醯胺、N,N'-對伸苯基雙間胺基苯甲醯胺、N,N'-間伸苯基雙對胺基苯甲醯胺、N,N'-間伸苯基雙間胺基苯甲醯胺、N,N'-二甲基-N,N'-對伸苯基雙對胺基苯甲醯胺、N,N'-二甲基-N,N'-對伸苯基雙間胺基苯甲醯胺、N,N'-二苯基-N,N'-對伸苯基雙對胺基苯甲醯胺或N,N'-二苯基-N,N'-對伸苯基雙間胺基苯甲醯胺,較佳為對苯二胺、間苯二胺、3,3'-二胺基二苯醚、4,4'-二胺基二苯醚、3,4'-二胺基二苯醚、3,3'-二胺基二苯基碸、4,4'-二胺基二苯基碸、9,9'-雙(4-胺基苯基)茀或4,4'-二胺基苯甲醯苯胺。 Examples of the aromatic diamine compound include p-phenylenediamine and isophthalic acid. Amine, 3,3'-diaminodiphenyl ether, 4,4'-diaminodiphenyl ether, 3,4'-diaminodiphenyl ether, 4,4'-diaminodiphenylmethane , 3,3'-diaminodiphenylanthracene, 4,4'-diaminodiphenylanthracene, 3,3'-diaminodiphenyl sulfide, 4,4'-diaminodiyl Phenyl sulfide, 1,3-bis(4-aminophenoxy)benzene, 1,4-bis(4-aminophenoxy)benzene, 2,2-bis(trifluoromethyl)benzidine 9,9'-bis(4-aminophenyl)phosphonium 4,4'-diaminodiphenylamine, 3,4'-diaminodiphenylamine, 3,3'-diamino Diphenylamine, 2,4'-diaminodiphenylamine, 4,4'-diaminodibenzylamine, 2,2'-diaminodibenzylamine, 3,4'-diamino Dibenzylamine, 3,3'-diaminodibenzylamine, N,N'-bis-(4-amino-3-methylphenyl)ethylenediamine, 4,4'-diaminobenzoic acid Aniline, 3,4'-diaminobenzimidamide, 3,3'-diaminobenzimidil, 4,3'-diaminobenzamide, 2,4'-diamine Benzoquinone aniline, N,N'-p-phenylenebis-aminobenzamide, N,N'-p-phenylene-m-aminobenzamide, N,N'-m-phenylene Bis-aminobenzamide, N,N'-meta-phenyl bis-aminobenzamide, N,N'-dimethyl-N,N'-p-phenylene Aminobenzamide, N,N'-dimethyl-N,N'-p-phenylene-m-aminobenzamide, N,N'-diphenyl-N,N'-pair Phenylbis-p-aminobenzamide or N,N'-diphenyl-N,N'-p-phenylenem-aminobenzamide, preferably p-phenylenediamine, m-phenylenediamine , 3,3'-diaminodiphenyl ether, 4,4'-diaminodiphenyl ether, 3,4'-diaminodiphenyl ether, 3,3'-diaminodiphenyl hydrazine, 4,4'-Diaminodiphenylphosphonium, 9,9'-bis(4-aminophenyl)anthracene or 4,4'-diaminobenzimidamide.
芳香族四羧酸例如可列舉:4,4'-氧二鄰苯二甲酸二酐、 3,3',4,4'-二苯甲酮四羧酸二酐、均苯四甲酸二酐、3,4,9,10-苝四羧酸二酐、3,3',4,4'-二苯基碸四羧酸二酐、3,3',4,4'-聯苯四羧酸二酐、1,2,5,6-萘四羧酸二酐、3,3',4,4'-對聯三苯基四羧酸二酐或3,3',4,4'- 間聯三苯基四羧酸二酐等,較佳為4,4'-聯苯四羧酸二酐、4,4'-二苯甲酮四羧酸二酐或均苯四甲酸二酐。此外,若使用如4,4'-(六氟亞異丙基)二鄰苯二甲酸二酐之類的氟系四羧酸二酐,則可獲得於短波長區域的透明性良好的聚醯亞胺。 Examples of the aromatic tetracarboxylic acid include 4,4'-oxydiphthalic dianhydride. 3,3',4,4'-benzophenonetetracarboxylic dianhydride, pyromellitic dianhydride, 3,4,9,10-decanetetracarboxylic dianhydride, 3,3',4,4 '-Diphenylphosphonium tetracarboxylic dianhydride, 3,3',4,4'-biphenyltetracarboxylic dianhydride, 1,2,5,6-naphthalenetetracarboxylic dianhydride, 3,3', 4,4'-P-triphenyltetracarboxylic dianhydride or 3,3',4,4'- The cross-linked triphenyltetracarboxylic dianhydride or the like is preferably 4,4'-biphenyltetracarboxylic dianhydride, 4,4'-benzophenonetetracarboxylic dianhydride or pyromellitic dianhydride. Further, when a fluorine-based tetracarboxylic dianhydride such as 4,4'-(hexafluoroisopropylidene)diphthalic dianhydride is used, it is possible to obtain a polyethylene having good transparency in a short-wavelength region. Imine.
於用以獲得聚醯胺酸的具有酸酐基的化合物與二胺化 合物的加成聚合中,亦可視需要添加順丁烯二酸酐或鄰苯二甲酸酐等酸酐作為封端劑。另外,為了提高與玻璃(glass)板或矽晶圓(silicon wafer)等無機物的接著性,亦可使用具有矽原子的酸酐或具有矽原子的二胺化合物。具有矽原子的二胺較佳為雙-3-(胺基丙基)四甲基矽氧烷等矽氧烷二胺化合物。具有矽原子的二胺於全部二胺化合物中所佔的比率較佳為1莫耳%~20莫耳%。若矽氧烷二胺化合物少,則無法獲得提高接著性的效果。另一方面,若過多,則有膜的耐熱性降低的傾向。另外,於遮光層的圖案形成時有於鹼性溶液中進行顯影的情況,若量過多,則有由密接性過高導致鹼性顯影時產生殘膜的問題的情況。 Compounds having an acid anhydride group and diamined to obtain polyamic acid In the addition polymerization of the compound, an acid anhydride such as maleic anhydride or phthalic anhydride may be added as a terminal blocking agent as needed. Further, in order to improve the adhesion to an inorganic substance such as a glass plate or a silicon wafer, an acid anhydride having a halogen atom or a diamine compound having a germanium atom may be used. The diamine having a halogen atom is preferably a peroxane diamine compound such as bis-3-(aminopropyl)tetramethylphosphonane. The ratio of the diamine having a halogen atom to the entire diamine compound is preferably from 1 mol% to 20 mol%. If the amount of the oxirane diamine compound is small, the effect of improving the adhesion cannot be obtained. On the other hand, if it is too much, the heat resistance of a film tends to fall. Further, in the case where the pattern of the light shielding layer is formed, development is carried out in an alkaline solution, and if the amount is too large, there is a problem that a residual film is generated during alkaline development due to excessive adhesion.
用以獲得聚醯胺酸的具有酸酐基的化合物與二胺化合 物亦可使用脂環式的酸二酐或脂環式的二胺。脂環式的酸二酐或脂環式的二胺例如可列舉:1,2,4,5-環己烷四羧酸二酐、雙環[2.2.2]辛-7-烯-2,3,5,6-四羧酸二酐、雙環[2.2.1]庚烷-2-內(endo)-3-內-5-外(exo)-6-外-2,3,5,6-四羧酸二酐、雙環[2.2.1]庚烷-2-外-3-外-5-外-6-外-2,3,5,6-四羧酸二酐、雙環[2.2.1]庚烷-2,3,5,6-四羧酸二酐或十氫-二甲橋萘四羧酸二酐或雙[2-(3-胺基丙氧基)乙基]醚、1,4- 丁二醇雙(3-胺基丙基)醚、3,9-雙(3-胺基丙基)-2,4,8,10-四螺環-5,5-十一烷、1,2-雙(2-胺基乙氧基)乙烷、1,2-雙(3-胺基丙氧基)乙烷、三乙二醇雙(3-胺基丙基)醚、聚乙二醇雙(3-胺基丙基)醚、3,9-雙(3-胺基丙基)-2,4,8,10-四螺環-5,5-十一烷或1,4-丁二醇雙(3-胺基丙基)醚。 Compound having an acid anhydride group to obtain polyamic acid and diamine It is also possible to use an alicyclic acid dianhydride or an alicyclic diamine. Examples of the alicyclic acid dianhydride or the alicyclic diamine include 1,2,4,5-cyclohexanetetracarboxylic dianhydride and bicyclo [2.2.2] oct-7-ene-2,3. , 5,6-tetracarboxylic dianhydride, bicyclo [2.2.1] heptane-2-endo (endo)-3-endo-5-exo (exo)-6-exo-2,3,5,6- Tetracarboxylic dianhydride, bicyclo[2.2.1]heptane-2-exo-3-exo-5-exo-6-exo-2,3,5,6-tetracarboxylic dianhydride, bicyclo[2.2.1 Heptane-2,3,5,6-tetracarboxylic dianhydride or decahydro-dimethyl bridge naphthalenetetracarboxylic dianhydride or bis[2-(3-aminopropoxy)ethyl]ether, 1 , 4- Butanediol bis(3-aminopropyl)ether, 3,9-bis(3-aminopropyl)-2,4,8,10-tetraspiro-5,5-undecane, 1, 2-bis(2-aminoethoxy)ethane, 1,2-bis(3-aminopropoxy)ethane, triethylene glycol bis(3-aminopropyl)ether, polyethylene Alcohol bis(3-aminopropyl)ether, 3,9-bis(3-aminopropyl)-2,4,8,10-tetraspiro-5,5-undecane or 1,4- Butanediol bis(3-aminopropyl)ether.
遮光層(A)亦可含有密接性改良劑、高分子分散劑或 界面活性劑等作為其他添加劑。密接改良劑例如可列舉矽烷偶合劑(silane coupling agent)或鈦偶合劑(titanium coupling agent)。 密接性改良劑較佳為相對於聚醯亞胺樹脂或丙烯酸系樹脂等樹脂添加0.2質量%~20質量%。高分子分散劑例如可列舉:聚乙烯亞胺系高分子分散劑、聚胺基甲酸酯系高分子分散劑或聚烯丙胺系高分子分散劑。高分子分散劑通常相對於遮光材料添加1質量%~40質量%。界面活性劑例如可列舉:月桂基硫酸銨或聚氧乙烯烷基醚硫酸三乙醇胺等陰離子界面活性劑,硬脂胺乙酸酯或月桂基三甲基氯化銨等陽離子界面活性劑,月桂基二甲基氧化胺或月桂基羧基甲基羥基乙基咪唑鎓甜菜鹼等兩性界面活性劑,聚氧乙烯月桂醚、聚氧乙烯硬脂醚或山梨糖醇酐單硬脂酸酯等非離子界面活性劑,以聚二甲基矽氧烷等為主骨架的矽酮系界面活性劑或氟系界面活性劑。界面活性劑通常相對於顏料添加0.001質量%~10質量%,較佳為添加0.01質量%~1質量%。若界面活性劑少,則有塗佈性、著色被膜的平滑性或本納胞(benard cell)的防止效果變得不充分的情況。另一方面,若界面活性劑過多,則有塗膜 物性變得不良的情況。上述各種添加劑含有設置遮光層(A)時的組成物,但亦可其後藉由加熱或光照射而與樹脂發生化學反應,從而進入至樹脂的化學結構。 The light shielding layer (A) may also contain an adhesion improver, a polymer dispersant or A surfactant or the like is used as another additive. The adhesion improving agent may, for example, be a silane coupling agent or a titanium coupling agent. The adhesion improving agent is preferably added in an amount of 0.2% by mass to 20% by mass based on the resin such as a polyimide resin or an acrylic resin. Examples of the polymer dispersant include a polyethyleneimine polymer dispersant, a polyurethane polymer dispersant, and a polyallylamine polymer dispersant. The polymer dispersant is usually added in an amount of 1% by mass to 40% by mass based on the light-shielding material. Examples of the surfactant include an anionic surfactant such as ammonium lauryl sulfate or polyoxyethylene alkyl ether triethanolamine, a cationic surfactant such as stearyl acetate or lauryl trimethyl ammonium chloride, and a lauryl group. An amphoteric surfactant such as dimethylamine oxide or lauryl carboxymethylhydroxyethylimidazolium betaine, nonionic interface such as polyoxyethylene lauryl ether, polyoxyethylene stearyl ether or sorbitan monostearate The active agent is an anthrone-based surfactant or a fluorine-based surfactant having a main skeleton such as polydimethylsiloxane. The surfactant is usually added in an amount of 0.001% by mass to 10% by mass based on the pigment, and preferably 0.01% by mass to 1% by mass. When the amount of the surfactant is small, the coating property, the smoothness of the colored film, or the effect of preventing the benard cell may be insufficient. On the other hand, if there are too many surfactants, there is a coating film. Physical condition becomes bad. Each of the above additives contains a composition when the light shielding layer (A) is provided, but may be chemically reacted with the resin by heating or light irradiation to enter the chemical structure of the resin.
<<遮光層(B)>> <<Light shielding layer (B)>>
<遮光層(B)的組成> <Composition of light shielding layer (B)>
本發明的黑矩陣基板中的遮光層(B)含有遮光材料,進而較佳為含有樹脂。 The light shielding layer (B) in the black matrix substrate of the present invention contains a light shielding material, and further preferably contains a resin.
遮光層(B)所含有的遮光材料可列舉與遮光層(A)相 同的遮光材料,但由於OD/T大,故而較佳為選自碳黑、氮氧化鈦、氮化鈦及碳化鈦中的一種以上,更佳為氮化鈦或鈦氮化物。此處所謂的鈦氮化物是指含有氮化鈦作為主成分,且含有氧化鈦TiO2、低價氧化鈦TinO2n-1(1≦n≦20)或氮氧化鈦作為副成分的物質。鈦氮化物粒子含有氧原子,但為了獲得更高的OD/T,氧原子以少為佳,氧原子的含量更佳為12質量%以下,進而較佳為8質量%以下。 The light-shielding material contained in the light-shielding layer (B) may be the same light-shielding material as the light-shielding layer (A). However, since the OD/T is large, it is preferably selected from the group consisting of carbon black, titanium oxynitride, titanium nitride, and titanium carbide. More than one, more preferably titanium nitride or titanium nitride. The term "titanium nitride" as used herein means a material containing titanium nitride as a main component and containing titanium oxide TiO 2 , low-valent titanium oxide TinO 2n-1 (1≦n≦20) or titanium oxynitride as an auxiliary component. The titanium nitride particles contain an oxygen atom. However, in order to obtain a higher OD/T, the oxygen atom is preferably less, and the content of the oxygen atom is more preferably 12% by mass or less, still more preferably 8% by mass or less.
鈦氮化物粒子的合成例如可列舉電爐法或熱電漿法等 氣相反應法。其中,由於雜質的混入少、粒徑容易均勻、生產性亦高,故而較佳為熱電漿法。產生熱電漿的方法例如可列舉:直流電弧放電(direct current arc discharge)、多層電弧放電(multi-layer arc discharge)、高頻(射頻(radio frequency,RF))電漿或混合電漿(hybrid plasma)等。其中,由於自電極的雜質的混入少,故而較佳為高頻電漿。 Examples of the synthesis of the titanium nitride particles include an electric furnace method or a thermoelectric plasma method. Gas phase reaction method. Among them, the thermal plasma method is preferred because the amount of impurities is small, the particle diameter is easily uniform, and the productivity is high. The method of generating the thermo-plasma may, for example, be a direct current arc discharge, a multi-layer arc discharge, a high frequency (radio frequency (RF)) plasma or a hybrid plasma (hybrid plasma). )Wait. Among them, high-frequency plasma is preferred because the impurities from the electrode are less mixed.
遮光材料的粒徑較佳為10nm~300nm,更佳為30nm ~100nm。此處遮光材料的粒徑是指遮光材料的一次粒徑。遮光材料的一次粒徑可藉由與微粒子的情況相同的方法而算出。若遮光材料的粒徑超過300nm,則有微細的圖案加工變得困難的情況。另一方面,若小於10nm,則有容易引起粒子的凝聚,反射率變高的傾向。 The particle size of the light shielding material is preferably from 10 nm to 300 nm, more preferably 30 nm. ~100nm. Here, the particle diameter of the light-shielding material means the primary particle diameter of the light-shielding material. The primary particle diameter of the light-shielding material can be calculated by the same method as in the case of the fine particles. When the particle diameter of the light-shielding material exceeds 300 nm, fine pattern processing may become difficult. On the other hand, when it is less than 10 nm, aggregation of particles tends to occur, and the reflectance tends to be high.
遮光材料於遮光層(B)中所佔的比率較佳為10質量% 以上,進而更佳為40質量%以上。另外,其比率較佳為90質量%以下,進而較佳為80質量%。若遮光材料的比率少,則變得難以獲得充分的光學密度。另一方面,若過多,則變得難以圖案化。 The ratio of the light shielding material in the light shielding layer (B) is preferably 10% by mass. The above is more preferably 40% by mass or more. Further, the ratio thereof is preferably 90% by mass or less, and more preferably 80% by mass. If the ratio of the light shielding material is small, it becomes difficult to obtain a sufficient optical density. On the other hand, if it is too much, it becomes difficult to pattern.
遮光層(B)可含有的樹脂的比率較佳為10質量%以上, 進而較佳為20質量%以上。另外,其比率較佳為90質量%以下,進而較佳為60質量%以下。 The ratio of the resin which the light shielding layer (B) may contain is preferably 10% by mass or more. Further, it is preferably 20% by mass or more. Further, the ratio thereof is preferably 90% by mass or less, and more preferably 60% by mass or less.
遮光層(B)可含有的樹脂可列舉與遮光層(A)所含有 的樹脂相同的樹脂,其中較佳為丙烯酸系樹脂。 The resin which can be contained in the light shielding layer (B) can be exemplified by the light shielding layer (A). The resin is the same resin, and among them, an acrylic resin is preferable.
丙烯酸系樹脂較佳為具有羧基的丙烯酸系聚合物,可較 佳地使用不飽和羧酸與乙烯性不飽和化合物的共聚物。 The acrylic resin is preferably an acrylic polymer having a carboxyl group, which is comparable Copolymers of unsaturated carboxylic acids and ethylenically unsaturated compounds are preferably used.
成為共聚物的原料的不飽和羧酸例如可列舉:丙烯酸、 甲基丙烯酸、衣康酸、丁烯酸、順丁烯二酸、反丁烯二酸或乙烯基乙酸。乙烯性不飽和化合物例如可列舉:丙烯酸甲酯、甲基丙烯酸甲酯、丙烯酸乙酯、甲基丙烯酸乙酯、丙烯酸正丙酯、丙烯酸異丙酯、甲基丙烯酸正丙酯、甲基丙烯酸異丙酯、丙烯酸正丁 酯、甲基丙烯酸正丁酯、丙烯酸第二丁酯、甲基丙烯酸第二丁酯、丙烯酸異丁酯、甲基丙烯酸異丁酯、丙烯酸第三丁酯、甲基丙烯酸第三丁酯、丙烯酸正戊酯、甲基丙烯酸正戊酯、丙烯酸2-羥基乙酯、甲基丙烯酸2-羥基乙酯、丙烯酸苄酯或甲基丙烯酸苄酯等不飽和羧酸烷基酯。另外,其他乙烯性不飽和化合物可列舉:苯乙烯、對甲基苯乙烯、鄰甲基苯乙烯、間甲基苯乙烯或α-甲基苯乙烯等芳香族乙烯基化合物。此外,亦可列舉:丙烯酸胺基乙酯等不飽和羧酸胺基烷基酯、丙烯酸縮水甘油酯或甲基丙烯酸縮水甘油酯等不飽和羧酸縮水甘油酯、乙酸乙烯酯或丙酸乙烯酯等羧酸乙烯酯等。另外,亦可藉由使末端具有不飽和基的寡聚物(oligomer)或聚合物作為巨單體(macromonomer)進行共聚合而接枝(graft)化,例如可使用丙烯腈、甲基丙烯腈或α-氯丙烯腈等氰化乙烯基化合物、1,3-丁二烯或異戊二烯等脂肪族共軛二烯、於各自的末端具有丙烯醯基或甲基丙烯醯基的聚苯乙烯、聚丙烯酸甲酯、聚甲基丙烯酸甲酯、聚丙烯酸丁酯或聚甲基丙烯酸丁酯。該些共聚物成分之中,較佳為選自由甲基丙烯酸、丙烯酸、甲基丙烯酸甲酯、甲基丙烯酸2-羥基乙酯、甲基丙烯酸苄酯及苯乙烯所組成的組群中的單體(monomer)的兩種成分至四種成分的共聚物。通常於對樹脂BM進行圖案加工時進行顯影操作。為了使對經常利用的鹼性顯影液的溶解速度更為適當,更佳為重量平均分子量Mw(以四氫呋喃作為載體(carrier)於溫度23℃下利用凝膠滲透層析法(gel permeation chromatography)進行測定,使 用基於標準聚苯乙烯的校準曲線進行換算所得的值)為2千~10萬且酸值為70~150(mgKOH/g)。 Examples of the unsaturated carboxylic acid which is a raw material of the copolymer include acrylic acid. Methacrylic acid, itaconic acid, crotonic acid, maleic acid, fumaric acid or vinyl acetic acid. Examples of the ethylenically unsaturated compound include methyl acrylate, methyl methacrylate, ethyl acrylate, ethyl methacrylate, n-propyl acrylate, isopropyl acrylate, n-propyl methacrylate, and methacrylic acid. Propyl ester, acrylic acid Ester, n-butyl methacrylate, second butyl acrylate, second butyl methacrylate, isobutyl acrylate, isobutyl methacrylate, tert-butyl acrylate, third butyl methacrylate, acrylic acid An unsaturated carboxylic acid alkyl ester such as n-amyl ester, n-amyl methacrylate, 2-hydroxyethyl acrylate, 2-hydroxyethyl methacrylate, benzyl acrylate or benzyl methacrylate. Further, examples of the other ethylenically unsaturated compound include aromatic vinyl compounds such as styrene, p-methylstyrene, o-methylstyrene, m-methylstyrene or α-methylstyrene. Further, examples thereof include an unsaturated carboxylic acid aminoalkyl ester such as aminoethyl acrylate or an unsaturated carboxylic acid glycidyl ester such as glycidyl acrylate or glycidyl methacrylate, vinyl acetate or vinyl propionate. Ethylene carboxylate and the like. Alternatively, grafting may be carried out by copolymerizing an oligomer having an unsaturated group at the terminal or a polymer as a macromonomer, for example, acrylonitrile or methacrylonitrile may be used. Or a vinyl cyanide compound such as α-chloroacrylonitrile, an aliphatic conjugated diene such as 1,3-butadiene or isoprene, or a polyphenyl group having an acryl fluorenyl group or a methacryl fluorenyl group at each terminal. Ethylene, polymethyl acrylate, polymethyl methacrylate, polybutyl acrylate or polybutyl methacrylate. Among the copolymer components, a single one selected from the group consisting of methacrylic acid, acrylic acid, methyl methacrylate, 2-hydroxyethyl methacrylate, benzyl methacrylate, and styrene is preferred. A copolymer of two components to four components of a monomer. The developing operation is usually performed while patterning the resin BM. In order to make the dissolution rate of the frequently used alkaline developing solution more appropriate, it is more preferably a weight average molecular weight Mw (using tetrahydrofuran as a carrier at a temperature of 23 ° C by gel permeation chromatography) Measure The value obtained by conversion using a calibration curve based on a standard polystyrene is 2,000 to 100,000 and the acid value is 70 to 150 (mgKOH/g).
另外,可於遮光層(B)的原料的階段預先含有側鏈上 具有乙烯性不飽和基的丙烯酸系樹脂。藉由含有該材料,可使對樹脂BM進行圖案加工時的曝光及顯影時的感度提高。乙烯性不飽和基較佳為丙烯醯基或甲基丙烯醯基。側鏈上具有乙烯性不飽和基的丙烯酸系樹脂可使具有縮水甘油基或脂環式環氧基的乙烯性不飽和化合物對具有羧基的丙烯酸系樹脂的羧基進行加成反應而獲得。 In addition, the side chain may be previously included in the stage of the raw material of the light shielding layer (B). An acrylic resin having an ethylenically unsaturated group. By containing this material, the sensitivity at the time of exposure and development at the time of pattern processing of the resin BM can be improved. The ethylenically unsaturated group is preferably an acryloyl group or a methacryl group. The acrylic resin having an ethylenically unsaturated group in the side chain can be obtained by subjecting an ethylenically unsaturated compound having a glycidyl group or an alicyclic epoxy group to an addition reaction of a carboxyl group of an acrylic resin having a carboxyl group.
側鏈上具有乙烯性不飽和基的丙烯酸系樹脂例如可列 舉市售的作為丙烯酸系樹脂的CYCLOMER(註冊商標)P(大賽璐化學工業(Daicel Chemical Industries)股份有限公司)或鹼可溶性卡多樹脂(cardo resin),但為了使對酯系溶劑或鹼性顯影液的溶解性變得適當,較佳為重量平均分子量(Mw)為2千~10萬且酸值為70~150(mgKOH/g)。 An acrylic resin having an ethylenically unsaturated group in the side chain can be listed, for example CYCLOMER (registered trademark) P (Daicel Chemical Industries Co., Ltd.) or alkali-soluble cardo resin which is commercially available as an acrylic resin, but in order to make the ester solvent or alkaline The solubility of the developer is suitably adjusted, and the weight average molecular weight (Mw) is preferably from 2,000 to 100,000 and the acid value is from 70 to 150 (mgKOH/g).
可使遮光層(B)的原料中更含有多官能丙烯酸系單體 或其反應物。遮光層是於其後被實施圖案加工,通常該加工是按照圖案曝光及顯影的順序進行。藉由曝光使上述化合物進行聚合及交聯而變得不溶於顯影液。多官能丙烯酸系單體可列舉多官能的丙烯酸系單體或寡聚物。多官能的丙烯酸系單體例如可列舉:雙酚A二縮水甘油醚(甲基)丙烯酸酯、聚(甲基)丙烯酸胺基甲酸酯、改質雙酚A環氧(甲基)丙烯酸酯、己二酸1,6-己二醇(甲基)丙 烯酸酯、鄰苯二甲酸酐環氧丙烷(甲基)丙烯酸酯、偏苯三甲酸二乙二醇(甲基)丙烯酸酯、松香改質環氧二(甲基)丙烯酸酯、醇酸改質(甲基)丙烯酸酯、茀二丙烯酸酯系寡聚物、三丙二醇二(甲基)丙烯酸酯、1,6-己二醇二(甲基)丙烯酸酯、雙酚A二縮水甘油醚二(甲基)丙烯酸酯、三羥甲基丙烷三(甲基)丙烯酸酯、季戊四醇三(甲基)丙烯酸酯、三丙烯基縮甲醛(triacryl formal)、季戊四醇四(甲基)丙烯酸酯、二季戊四醇六(甲基)丙烯酸酯、二季戊四醇五(甲基)丙烯酸酯、2,2-雙[4-(3-丙烯醯氧基-2-羥基丙氧基)苯基]丙烷、雙[4-(3-丙烯醯氧基-2-羥基丙氧基)苯基]甲烷、雙[4-(3-丙烯醯氧基-2-羥基丙氧基)苯基]碸、雙[4-(3-丙烯醯氧基-2-羥基丙氧基)苯基]醚、4,4'-雙[4-(3-丙烯醯氧基-2-羥基丙氧基)苯基]環己烷、9,9-雙[4-(3-丙烯醯氧基-2-羥基丙氧基)苯基]茀、9,9-雙[3-甲基-4-(3-丙烯醯氧基-2-羥基丙氧基)苯基]茀、9,9-雙[3-氯-4-(3-丙烯醯氧基-2-羥基丙氧基)苯基]茀、雙苯氧基乙醇茀二丙烯酸酯、雙苯氧基乙醇茀二甲基丙烯酸酯、雙甲酚茀二丙烯酸酯及雙甲酚茀二甲基丙烯酸酯。 The material of the light shielding layer (B) may further contain a polyfunctional acrylic monomer Or its reactants. The light-shielding layer is thereafter subjected to pattern processing, and usually the processing is performed in the order of pattern exposure and development. The above compound is polymerized and crosslinked by exposure to become insoluble in the developer. The polyfunctional acrylic monomer may, for example, be a polyfunctional acrylic monomer or oligomer. Examples of the polyfunctional acrylic monomer include bisphenol A diglycidyl ether (meth) acrylate, poly(meth) acrylate urethane, and modified bisphenol A epoxy (meth) acrylate. 1,6-hexanediol (methyl) adipic acid Ethyl ester, phthalic anhydride, propylene oxide (meth) acrylate, trimellitic acid diethylene glycol (meth) acrylate, rosin modified epoxy di(meth) acrylate, alkyd (meth) acrylate, oxime diacrylate oligomer, tripropylene glycol di(meth) acrylate, 1,6-hexanediol di(meth) acrylate, bisphenol A diglycidyl ether (Meth) acrylate, trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, triacryl formal, pentaerythritol tetra (meth) acrylate, dipentaerythritol Hexa(meth)acrylate, dipentaerythritol penta(meth)acrylate, 2,2-bis[4-(3-propenyloxy-2-hydroxypropoxy)phenyl]propane, bis[4- (3-propenyloxy-2-hydroxypropoxy)phenyl]methane, bis[4-(3-propenyloxy-2-hydroxypropoxy)phenyl]anthracene, bis[4-(3 -propenyloxy-2-hydroxypropoxy)phenyl]ether, 4,4'-bis[4-(3-propenyloxy-2-hydroxypropoxy)phenyl]cyclohexane, 9 ,9-bis[4-(3-propenyloxy-2-hydroxypropoxy)phenyl]indole, 9,9-bis[3-methyl-4-(3-propenyloxy-2- Propyloxy)phenyl]anthracene, 9,9-bis[3-chloro-4-(3-propenyloxy-2-hydroxypropoxy)phenyl]anthracene, bisphenoxyethanol oxime diacrylate Ester, bisphenoxyethanol oxime dimethacrylate, biscresol oxime diacrylate and biscresol oxime dimethacrylate.
可適宜選擇組合該些多官能的單體或寡聚物,較佳為官 能基為3以上的化合物,更佳為官能基為5以上的化合物,進而較佳為二季戊四醇六(甲基)丙烯酸酯或二季戊四醇五(甲基)丙烯酸酯。 Suitably, the combination of the polyfunctional monomers or oligomers is preferred, preferably The compound having an energy group of 3 or more is more preferably a compound having 5 or more functional groups, and further preferably dipentaerythritol hexa(meth) acrylate or dipentaerythritol penta (meth) acrylate.
遮光層(B)有所含有的遮光材料不僅吸收可見光區域 而且亦吸收對光交聯有效的紫外線的傾向,因此較佳為即便以少 的紫外線量亦感度良好地硬化的多官能丙烯酸系單體的組合,具體而言,較佳為除二季戊四醇六(甲基)丙烯酸酯或二季戊四醇五(甲基)丙烯酸酯以外,亦併用分子中含有大量芳香環且具有撥水性高的茀環的(甲基)丙烯酸酯。具有茀環的(甲基)丙烯酸酯較佳為相對於二季戊四醇六(甲基)丙烯酸酯及二季戊四醇五(甲基)丙烯酸酯10質量份~60質量份而使用90質量份~40質量份。 The light shielding layer contained in the light shielding layer (B) not only absorbs the visible light region Moreover, it also absorbs the tendency of ultraviolet rays effective for photocrosslinking, so it is preferable to even The amount of ultraviolet rays is also a combination of a highly sensitive polyfunctional acrylic monomer. Specifically, it is preferably a combination of dipentaerythritol hexa(meth) acrylate or dipentaerythritol penta (meth) acrylate. A (meth) acrylate having a large amount of an aromatic ring and having an anthracene ring having a high water repellency. The (meth) acrylate having an anthracene ring is preferably used in an amount of from 90 parts by mass to 40 parts by mass per 10 parts by mass to 60 parts by mass relative to dipentaerythritol hexa(meth) acrylate and dipentaerythritol penta (meth) acrylate. .
遮光層(B)的原料中可含有光聚合起始劑。例如,可 列舉:二苯甲酮系化合物、苯乙酮系化合物、氧雜蒽酮(oxanthone)系化合物、咪唑系化合物、苯并噻唑系化合物、苯并噁唑系化合物、肟酯化合物、咔唑系化合物、三嗪系化合物、磷系化合物或鈦酸酯等無機系光聚合起始劑。 The photopolymerization initiator may be contained in the raw material of the light shielding layer (B). For example, Examples thereof include a benzophenone-based compound, an acetophenone-based compound, an oxanthone-based compound, an imidazole-based compound, a benzothiazole-based compound, a benzoxazole-based compound, an oxime ester compound, and an oxazole-based compound. An inorganic photopolymerization initiator such as a triazine compound, a phosphorus compound or a titanate.
更具體而言,例如可列舉:二苯甲酮、N,N'-四乙基-4,4'- 二胺基二苯甲酮、4-甲氧基-4'-二甲基胺基二苯甲酮、2,2-二乙氧基苯乙酮、安息香、安息香甲醚、安息香異丁醚、苯偶醯二甲基縮酮、α-羥基異丁基苯酮、硫雜蒽酮、2-氯硫雜蒽酮、1-羥基環己基苯基酮、2-甲基-1-[4-(甲硫基)苯基]-2-嗎啉基-1-丙烷、「Irgacure」(註冊商標)369(2-苄基-2-二甲基胺基-1-(4-嗎啉基苯基)-丁酮)、「Irgacure」(註冊商標)OXE01(1,2-辛二酮,1-[4-(苯硫基)-2-(O-苯甲醯基肟)])、CGI-113(2-[4-甲基苄基]-2-二甲基胺基-1-(4-嗎啉基苯基)-丁酮、第三丁基蒽醌)或CGI-242(乙酮,1-[9-乙基-6-(2-甲基苯甲醯基)-9H-咔唑-3-基]-1-(O-乙醯基肟))(以上,均為汽巴精化(Ciba Specialty Chemicals)股份有限公司製造)、1-氯蒽醌、 2,3-二氯蒽醌、3-氯-2-甲基蒽醌、2-乙基蒽醌、1,4-萘醌、9,10-菲醌、1,2-苯并蒽醌、1,4-二甲基蒽醌、2-苯基蒽醌、2-(鄰氯苯基)-4,5-二苯基咪唑二聚物、2-巰基苯并噻唑、2-巰基苯并噁唑、4-(對甲氧基苯基)-2,6-二-(三氯甲基)-均三嗪或「Adeka」(註冊商標)「Optomer」(註冊商標)N-1818或「Adeka」(註冊商標)「Optomer」(註冊商標)N-1919等咔唑系化合物(均為旭電化工業股份有限公司製造)。遮光層(B)的原料中亦可含有密接性改良劑、高分子分散劑或界面活性劑等作為其他添加劑。具體而言,可列舉與遮光層(A)中所含的添加劑相同的添加劑。 More specifically, for example, benzophenone, N, N'-tetraethyl-4, 4'- Diaminobenzophenone, 4-methoxy-4'-dimethylaminobenzophenone, 2,2-diethoxyacetophenone, benzoin, benzoin methyl ether, benzoin isobutyl ether, Benzene dimethyl ketal, α-hydroxyisobutyl benzophenone, thioxanthone, 2-chlorothiazinone, 1-hydroxycyclohexyl phenyl ketone, 2-methyl-1-[4- (Methylthio)phenyl]-2-morpholinyl-1-propane, "Irgacure" (registered trademark) 369 (2-benzyl-2-dimethylamino-1-(4-morpholinylbenzene) ()-butanone), "Irgacure" (registered trademark) OXE01 (1,2-octanedione, 1-[4-(phenylthio)-2-(O-benzylidene))), CGI -113 (2-[4-methylbenzyl]-2-dimethylamino-1-(4-morpholinylphenyl)-butanone, tert-butylhydrazine) or CGI-242 (B Ketone, 1-[9-ethyl-6-(2-methylbenzhydryl)-9H-indazol-3-yl]-1-(O-ethylindenyl)) (above, all steam Manufactured by Ciba Specialty Chemicals Co., Ltd., 1-chloroindole, 2,3-Dichloropurine, 3-chloro-2-methylindole, 2-ethylhydrazine, 1,4-naphthoquinone, 9,10-phenanthrenequinone, 1,2-benzopyrene, 1,4-Dimethyl hydrazine, 2-phenyl hydrazine, 2-(o-chlorophenyl)-4,5-diphenylimidazole dimer, 2-mercaptobenzothiazole, 2-mercaptobenzoene Oxazole, 4-(p-methoxyphenyl)-2,6-di-(trichloromethyl)-s-triazine or "Adeka" (registered trademark) "Optomer" (registered trademark) N-1818 or " Adeka" (registered trademark) "Optomer" (registered trademark) N-1919 and other carbazole compounds (all manufactured by Asahi Denki Kogyo Co., Ltd.). The raw material of the light shielding layer (B) may contain an adhesion improver, a polymer dispersant, a surfactant, or the like as another additive. Specifically, the same additives as those contained in the light shielding layer (A) are mentioned.
<<樹脂BM>> <<Resin BM>>
本發明的黑矩陣基板中的遮光層(A)及遮光層(B)的膜厚分別較佳為0.3μm以上,進而較佳為0.4μm以上。另外,分別較佳為1.2μm以下,進而較佳為1.0μm以下。另外,合併兩層的樹脂BM整體的膜厚較佳為0.5μm以上,進而較佳為1.0μm以上。另外,該膜厚較佳為2.0μm以下,進而較佳為1.5μm以下。若整體的膜厚過小,則有無法獲得適度的光學密度的情況。另一方面,若過大,則有產生由液晶配向不良引起的對比度的降低的情況。 The thickness of the light shielding layer (A) and the light shielding layer (B) in the black matrix substrate of the present invention is preferably 0.3 μm or more, and more preferably 0.4 μm or more. Further, it is preferably 1.2 μm or less, and more preferably 1.0 μm or less. Further, the film thickness of the entire resin BM in which the two layers are combined is preferably 0.5 μm or more, and more preferably 1.0 μm or more. Further, the film thickness is preferably 2.0 μm or less, and more preferably 1.5 μm or less. If the overall film thickness is too small, an appropriate optical density may not be obtained. On the other hand, if it is too large, there is a case where the contrast due to the liquid crystal alignment failure is lowered.
本發明的黑矩陣基板上所形成的樹脂BM的圖案形狀例如可列舉:矩形、條紋狀(stripe)、正方形、多邊形、波型或具有凹凸的形狀。圖案的寬度較佳為3μm~30μm,更佳為3μm~10μm,進而較佳為3μm~6μm。若圖案寬度過大,則有畫素的開口部面積變小而亮度降低的情況。另一方面,若圖案寬度過小,則 有於加工時圖案欠缺的情況。 The pattern shape of the resin BM formed on the black matrix substrate of the present invention may be, for example, a rectangle, a stripe, a square, a polygon, a wave, or a shape having irregularities. The width of the pattern is preferably from 3 μm to 30 μm, more preferably from 3 μm to 10 μm, still more preferably from 3 μm to 6 μm. When the pattern width is too large, the area of the opening of the pixel is small and the brightness is lowered. On the other hand, if the pattern width is too small, then There are cases where the pattern is lacking during processing.
關於構成本發明的黑矩陣基板的遮光層(A)的圖案與 遮光層(B)的圖案,為了使畫素的開口部面積最大而提高亮度,而較佳為大體相同。具體而言,是指矩形或條紋狀等的遮光層(A)及遮光層(B)的圖案形狀大致相同。圖案寬度無需嚴格相同,但遮光層(A)的圖案寬度與遮光層(B)的圖案寬度的差較佳為3μm以下,更佳為1μm以下,進而較佳為0.5μm以下。 The pattern of the light shielding layer (A) constituting the black matrix substrate of the present invention The pattern of the light shielding layer (B) is preferably substantially the same in order to maximize the opening area of the pixel and increase the brightness. Specifically, it means that the pattern shapes of the light shielding layer (A) such as a rectangular shape or a stripe shape and the light shielding layer (B) are substantially the same. The pattern width need not be strictly the same, but the difference between the pattern width of the light shielding layer (A) and the pattern width of the light shielding layer (B) is preferably 3 μm or less, more preferably 1 μm or less, still more preferably 0.5 μm or less.
本發明的黑矩陣基板上所形成的樹脂BM的表面電阻值(Ω/□)較佳為108(Ω/□)以上,更佳為1015(Ω/□)以上。藉由形成表面電阻值大的樹脂BM,而使彩色濾光片基板的絕緣性變高,在施加電壓的情況時不會使電場紊亂,獲得良好的液晶配向性,其結果可獲得品質良好即具有良好的顯示的液晶顯示裝置。 The surface resistance value (Ω/□) of the resin BM formed on the black matrix substrate of the present invention is preferably 10 8 (Ω/□) or more, and more preferably 10 15 (Ω/□) or more. When the resin BM having a large surface resistance value is formed, the insulating property of the color filter substrate is increased, and when a voltage is applied, the electric field is not disturbed, and good liquid crystal alignment property is obtained, and as a result, good quality can be obtained. A liquid crystal display device having a good display.
<<透明基板>> <<Transparent substrate>>
透明基板例如可列舉:石英玻璃、硼矽玻璃(borosilicate glass)、鋁矽酸鹽玻璃(aluminosilicate glass)、表面經氧化矽塗佈的鈉鈣玻璃(soda lime glass)等無機玻璃類或有機塑膠(plastic)的膜(film)或片(sheet),折射率較佳為1.4~1.8,更佳為1.5~1.7。此處所謂的透明是指於波長380nm~700nm的整個區域內透射率為80%以上,較佳為90%以上。 Examples of the transparent substrate include inorganic glass or organic plastic such as quartz glass, borosilicate glass, aluminosilicate glass, and soda lime glass coated with cerium oxide. The film or sheet of plastic has a refractive index of preferably 1.4 to 1.8, more preferably 1.5 to 1.7. The term "transparent" as used herein means that the transmittance is 80% or more, preferably 90% or more, over the entire wavelength range of 380 nm to 700 nm.
有機塑膠的膜較佳為聚醯亞胺樹脂。藉由使用聚醯亞胺樹脂作為透明基板,可獲得耐熱性或尺寸穩定性優異的可撓性(flexible)黑矩陣基板及彩色濾光片基板。 The film of the organic plastic is preferably a polyimide resin. By using a polyimide resin as a transparent substrate, a flexible black matrix substrate and a color filter substrate excellent in heat resistance and dimensional stability can be obtained.
聚醯亞胺樹脂的膜可藉由將聚醯胺酸等聚醯亞胺前驅 物樹脂的溶液塗佈於暫時基板上後,進行乾燥及加熱而製作。 The film of the polyimide resin can be obtained by using a polyamidene precursor such as polylysine The solution of the resin is applied onto a temporary substrate, and then dried and heated to prepare.
首先,將聚醯亞胺前驅物樹脂組成物塗佈於暫時基板 上。暫時基板的材質例如可列舉:矽晶圓、陶瓷類、砷化鎵、鈉鈣玻璃或無鹼玻璃(non-alkali glass)。將聚醯亞胺前驅物樹脂的溶液塗佈於暫時基板上的方法例如可列舉:狹縫塗佈法(slit coat method)、旋轉塗佈法(spin coat method)、噴霧塗佈法(spray coat method)、輥式塗佈法(roll coat method)或棒式塗佈法(bar coat method),較佳為旋轉塗佈法或狹縫塗佈法。其次,對塗佈有聚醯亞胺前驅物樹脂的溶液的暫時基板進行乾燥而獲得聚醯亞胺前驅物樹脂組成物膜。乾燥的方法例如可列舉使用加熱板(hot plate)、烘箱(oven)、紅外線或真空室(vacuum chamber)等的方法。在使用加熱板的情況下,於加熱板上或設置於加熱板上的固定銷(Proxy Pin)等治具上將暫時基板加熱乾燥。其次,將聚醯亞胺前驅物樹脂組成物膜於180℃~400℃下進行加熱,而使之轉化為聚醯亞胺樹脂膜。 First, the polyimide composition precursor resin composition is applied to a temporary substrate on. Examples of the material of the temporary substrate include germanium wafers, ceramics, gallium arsenide, soda lime glass, or non-alkali glass. Examples of the method of applying the solution of the polyimine precursor resin onto the temporary substrate include a slit coating method, a spin coating method, and a spray coating method. The roll coating method or the bar coat method is preferably a spin coating method or a slit coating method. Next, the temporary substrate of the solution coated with the polyimide precursor resin was dried to obtain a polyimide composition precursor resin film. Examples of the drying method include a method using a hot plate, an oven, an infrared ray, or a vacuum chamber. In the case of using a hot plate, the temporary substrate is heated and dried on a jig or a fixture such as a pin (Proxy Pin) provided on the hot plate. Next, the polyimine precursor resin composition film is heated at 180 ° C to 400 ° C to be converted into a polyimide film.
將該聚醯亞胺樹脂膜自暫時基板剝離的方法例如可列 舉:機械地進行剝離的方法、浸漬於氫氟酸等化學液或水中的方法、或將雷射(laser)照射至聚醯亞胺樹脂膜與暫時基板的界面的方法。此外,亦可不將聚醯亞胺樹脂膜自暫時基板剝離而直接製造黑矩陣基板、液晶顯示裝置或發光裝置,其後將聚醯亞胺樹脂膜自暫時基板剝離,但就尺寸穩定性的觀點而言,較佳為於製 造彩色濾光片基板等後進行自暫時基板的剝離。 The method for peeling the polyimide film from the temporary substrate can be listed, for example. A method of mechanically peeling, a method of immersing in a chemical liquid such as hydrofluoric acid or water, or a method of irradiating a laser to an interface between a polyimide film and a temporary substrate. Further, the black matrix substrate, the liquid crystal display device, or the light-emitting device may be directly produced without peeling the polyimide film from the temporary substrate, and then the polyimide film may be peeled off from the temporary substrate, but the dimensional stability is not considered. In terms of After the color filter substrate or the like is formed, peeling from the temporary substrate is performed.
<<遮光層(A)及遮光層(B)的形成方法>> <<Method of forming light shielding layer (A) and light shielding layer (B)>>
於本發明的透明基材上形成遮光層(A)及遮光層(B)的方法例如可例示以下兩種方法。 The method of forming the light shielding layer (A) and the light shielding layer (B) on the transparent substrate of the present invention can be exemplified by the following two methods.
1)反覆進行多次光微影(photolithography)步驟的方法 1) A method of repeatedly performing a photolithography step
於透明基板上設置尚未經圖案化的遮光層(A),將該層圖案化。其後,進而設置尚未經圖案化的遮光層(B),將該層圖案化。 A light shielding layer (A) that has not been patterned is provided on the transparent substrate, and the layer is patterned. Thereafter, a light shielding layer (B) which has not been patterned is further provided, and the layer is patterned.
將遮光層(A)圖案化的方法可例示光微影法。可例示使用感光性樹脂組成物設置遮光層(A),進行圖案曝光使之顯影而獲得圖案的方法。另一方法是使用非感光性的樹脂組成物設置遮光層(A)。於其上設置光阻劑(photoresist),進行圖案曝光使之顯影而形成光阻劑的圖案。於該顯影的同時,遮光層(A)亦可以光阻劑的圖案作為遮罩(mask)利用顯影液進行蝕刻(etching)而圖案化。亦可以顯影後的光阻劑的圖案作為遮罩,藉由溶劑對遮光層(A)進行蝕刻而圖案化。遮光層(B)的圖案亦可與上文說明的遮光層(A)的圖案化方法同樣地形成。 The method of patterning the light shielding layer (A) can be exemplified by photolithography. A method in which a light-shielding layer (A) is provided using a photosensitive resin composition, and a pattern is exposed and developed to obtain a pattern can be exemplified. Another method is to provide a light shielding layer (A) using a non-photosensitive resin composition. A photoresist is placed thereon, and the pattern is exposed to develop to form a pattern of the photoresist. At the same time as the development, the light shielding layer (A) may be patterned by etching the pattern of the photoresist as a mask with a developing solution. The pattern of the photoresist after development may be used as a mask, and the light shielding layer (A) may be patterned by etching with a solvent. The pattern of the light shielding layer (B) may be formed in the same manner as the patterning method of the light shielding layer (A) described above.
2)進行一次光微影步驟的方法 2) Method of performing a photolithography step
於透明基板上設置尚未經圖案化的遮光層(A),進而設置尚未經圖案化的遮光層(B),藉由光微影法將遮光層(A)及遮光層(B)圖案化。光微影法是於遮光層(B)上設置光阻劑,進行圖案曝光,於光阻劑的顯影的同時,以光阻劑的圖案作為遮罩對遮光層(B)及遮光層(A)進行蝕刻,而形成圖案。或者,亦可於 形成光阻劑的圖案之後,以光阻劑的圖案作為遮罩,藉由溶劑將遮光層(A)及遮光層(B)圖案化。另外,作為另一進行一次光微影的方法是於透明基板上設置尚未經圖案化的遮光層(A),進而設置包含感光性樹脂組成物的未經圖案化的遮光層(B),藉由光微影法將遮光層(B)圖案化,進而利用顯影液或溶劑而亦將遮光層(A)圖案化。該情況下,遮光層(A)亦可使用感光性樹脂組成物。 A light-shielding layer (A) which has not been patterned is provided on the transparent substrate, and a light-shielding layer (B) which has not been patterned is further provided, and the light-shielding layer (A) and the light-shielding layer (B) are patterned by photolithography. The photolithography method is to provide a photoresist on the light shielding layer (B) for pattern exposure, and to develop the photoresist while using the pattern of the photoresist as a mask for the light shielding layer (B) and the light shielding layer (A). Etching is performed to form a pattern. Or, After the pattern of the photoresist is formed, the light shielding layer (A) and the light shielding layer (B) are patterned by a solvent using a pattern of the photoresist as a mask. Further, as another method of performing photolithography, a light-shielding layer (A) which has not been patterned is provided on a transparent substrate, and an unpatterned light-shielding layer (B) containing a photosensitive resin composition is further provided. The light shielding layer (B) is patterned by photolithography, and the light shielding layer (A) is also patterned by a developing solution or a solvent. In this case, a photosensitive resin composition can also be used for the light shielding layer (A).
對形成黑矩陣基板中的遮光層(A)及遮光層(B)的圖 案的方法的詳情進行說明。遮光層(A)可藉由將樹脂組成物作為原料塗佈於透明基板而獲得。將樹脂組成物塗佈於透明基板上的方法例如可列舉:旋轉塗佈機(spin coater)、棒式塗佈機(bar coater)、刮刀塗佈機(blade coater)、輥式塗佈機(roll coater)、模具塗佈機(die coater)及網版印刷法(screen print method)。其他方法可列舉將透明基板浸漬於黑色樹脂組成物中的方法及將黑色樹脂組成物噴霧於基板的方法。為了提高塗佈性,樹脂組成物可更含有溶劑。例如可列舉:酯類、脂肪族醇類、(聚)烷二醇醚系溶劑、酮類、N-甲基-2-吡咯啶酮、N,N-二甲基乙醯胺或N,N-二甲基甲醯胺等醯胺系極性溶劑或內酯類,但由於提高作為遮光材料的顏料的分散效果,故而較佳為內酯類或以內酯類作為主成分的混合溶劑。此處所謂以內酯類作為主成分的溶劑,是指內酯類於全部溶劑中所佔的質量比最大的溶劑。另外,內酯類較佳為碳數3~12的脂肪族環狀酯化合物。內酯類例如可列舉:β-丙內酯、γ- 丁內酯、γ-戊內酯、δ-戊內酯、γ-己內酯或ε-己內酯。其中,就聚醯亞胺前驅物的溶解性的觀點而言,較佳為γ-丁內酯。另外,內酯類以外的溶劑例如可列舉:3-甲基-3-甲氧基丁醇、3-甲基-3-甲氧基乙酸丁酯、丙二醇單甲醚、丙二醇單甲醚乙酸酯、二丙二醇單甲醚、三丙二醇單甲醚、丙二醇單第三丁醚、異丁醇、異戊醇、乙基溶纖劑、乙酸乙基溶纖劑、丁基溶纖劑、乙酸丁基溶纖劑、甲基卡必醇、甲基卡必醇乙酸酯、乙基卡必醇及乙基卡必醇乙酸酯。關於溶劑於遮光層(A)的形成中所使用的黑色樹脂組成物中所佔的比率,就塗敷性及乾燥性的觀點而言,較佳為70質量%~98質量%,更佳為80質量%~95質量%。 Figure for forming the light shielding layer (A) and the light shielding layer (B) in the black matrix substrate The details of the method of the case are explained. The light shielding layer (A) can be obtained by applying a resin composition as a raw material to a transparent substrate. Examples of the method of applying the resin composition on the transparent substrate include a spin coater, a bar coater, a blade coater, and a roll coater. Roll coater), die coater and screen print method. Other methods include a method of immersing a transparent substrate in a black resin composition and a method of spraying a black resin composition on a substrate. In order to improve coatability, the resin composition may further contain a solvent. For example, an ester, an aliphatic alcohol, a (poly) alkanediol ether solvent, a ketone, N-methyl-2- pyrrolidone, N, N- dimethyl acetamide, or N, N are mentioned. - a guanamine-based polar solvent or a lactone such as dimethylformamide. However, since the dispersion effect of the pigment as a light-shielding material is improved, a lactone or a mixed solvent containing a lactone as a main component is preferable. Here, the solvent containing a lactone as a main component means a solvent in which the lactone has the largest mass ratio among all the solvents. Further, the lactone is preferably an aliphatic cyclic ester compound having 3 to 12 carbon atoms. Examples of the lactones include β-propiolactone and γ- Butyrolactone, γ-valerolactone, δ-valerolactone, γ-caprolactone or ε-caprolactone. Among them, γ-butyrolactone is preferred from the viewpoint of solubility of the polyimide precursor. Further, examples of the solvent other than the lactones include 3-methyl-3-methoxybutanol, 3-methyl-3-methoxyacetic acid butyl ester, propylene glycol monomethyl ether, and propylene glycol monomethyl ether acetate. Ester, dipropylene glycol monomethyl ether, tripropylene glycol monomethyl ether, propylene glycol monoterpene butoxide, isobutanol, isoamyl alcohol, ethyl cellosolve, ethyl cellosolve acetate, butyl cellosolve, butyl cellosolve acetate , methyl carbitol, methyl carbitol acetate, ethyl carbitol and ethyl carbitol acetate. The ratio of the solvent to the black resin composition used for the formation of the light-shielding layer (A) is preferably 70% by mass to 98% by mass, more preferably from the viewpoint of coatability and drying property. 80% by mass to 95% by mass.
遮光層(A)的形成中所使用的樹脂組成物的製造方法 例如可列舉使用分散機直接使遮光材料及微粒子分散於樹脂溶液中的方法。其他方法可列舉使用分散機使遮光材料及微粒子分散於水或有機溶劑中而製作分散液,其後將分散液與樹脂溶液混合的方法。遮光材料及微粒子的分散方法例如可列舉:球磨機(ball mill)、砂磨機(sand grinder)、三輥研磨機(three roll mill)或高速衝擊磨機。其中,就分散效率或微分散化的觀點而言,較佳為珠磨機(beads mill)。珠磨機例如可列舉:雙錐形球磨機(Co-ball mill)、籃式研磨機(basket mill)、針磨機(pin mill)或戴諾磨機(DYNO-MILL)。珠磨機的珠粒(beads)例如較佳為氧化鈦珠(titania beads)、氧化鋯珠(zirconia beads)或鋯英石珠(zircon beads)。分散中所使用的珠粒直徑較佳為0.01mm~5.0mm,更佳 為0.03mm~1.0mm。在顏料的一次粒徑或一次粒子凝聚而形成的二次粒子的粒徑小的情況下,分散中所使用的珠粒較佳為直徑為0.03mm~0.10mm的微小的分散珠。該情況下,較佳為使用可將微小的分散珠與分散液分離的具有利用離心分離方式的分離器(separator)的珠磨機進行分散。另一方面,在使含有次微米(submicron)程度的粗大粒子的遮光材料或微粒子分散的情況下,為了獲得充分的粉碎力,較佳為珠粒直徑為0.10mm以上的分散珠。另外,亦可使遮光材料與微粒子分別分散。該情況下,為了預防由溶劑震盪(solvent shock)引起的凝聚,較佳為使用相同的溶劑。 Method for producing resin composition used in formation of light shielding layer (A) For example, a method in which a light-shielding material and fine particles are directly dispersed in a resin solution using a dispersing machine can be mentioned. Other methods include a method in which a light-shielding material and fine particles are dispersed in water or an organic solvent using a disperser to prepare a dispersion, and then the dispersion is mixed with a resin solution. Examples of the method of dispersing the light-shielding material and the fine particles include a ball mill, a sand grinder, a three roll mill, or a high-speed impact mill. Among them, a beads mill is preferred from the viewpoint of dispersion efficiency or microdispersion. Examples of the bead mill include a Co-ball mill, a basket mill, a pin mill, or a DYNO-MILL. The beads of the bead mill are, for example, preferably titania beads, zirconia beads or zircon beads. The diameter of the beads used in the dispersion is preferably from 0.01 mm to 5.0 mm, more preferably It is 0.03mm~1.0mm. When the primary particle diameter of the pigment or the particle diameter of the secondary particles formed by the aggregation of the primary particles is small, the beads used for the dispersion are preferably finely dispersed beads having a diameter of 0.03 mm to 0.10 mm. In this case, it is preferred to use a bead mill having a separator which is separated by a centrifugal separation method, which can separate the fine dispersed beads from the dispersion. On the other hand, in the case of dispersing a light-shielding material or fine particles containing coarse particles of a submicron degree, in order to obtain a sufficient pulverization force, a dispersed bead having a bead diameter of 0.10 mm or more is preferable. In addition, the light shielding material and the fine particles may be dispersed separately. In this case, in order to prevent agglomeration caused by solvent shock, it is preferred to use the same solvent.
藉由風乾、加熱乾燥或真空乾燥等使藉由將如上所述的 樹脂組成物塗佈於透明基板上所獲得的塗佈膜乾燥硬化,從而形成乾燥被膜。為了抑制乾燥不均或搬送不均,較佳為利用具備加熱裝置的減壓乾燥機對塗佈有黑色樹脂組成物的透明基板進行減壓乾燥後,進行加熱使之半硬化(semi-cure)。 By air drying, heat drying or vacuum drying, etc. by The coating film obtained by coating the resin composition on a transparent substrate is dried and hardened to form a dried film. In order to suppress uneven drying or uneven conveyance, it is preferred to dry-dry the transparent substrate coated with the black resin composition by a vacuum dryer equipped with a heating device, and then heat-semi-cure. .
其次,為了於上述的遮光層(A)的乾燥膜上形成遮光 層(B),而塗佈OD/T大於遮光層(A)的遮光層(B)用的黑色組成物並使之乾燥。 Next, in order to form a light-shielding on the dried film of the above-mentioned light shielding layer (A) The layer (B) is coated with a black composition for which the OD/T is larger than the light shielding layer (B) of the light shielding layer (A) and dried.
用以形成遮光層(B)的黑色組成物較佳為使用含有遮 光材料、樹脂、溶劑、多官能丙烯酸系單體及光聚合起始劑的感光性黑色樹脂組成物而形成。 The black composition for forming the light shielding layer (B) is preferably used to cover It is formed of a photosensitive black resin composition of a light material, a resin, a solvent, a polyfunctional acrylic monomer, and a photopolymerization initiator.
遮光層(B)的形成中所使用的感光性黑色樹脂組成物 所含有的溶劑可根據所要分散的遮光材料的分散穩定性及所添加的樹脂成分的溶解性而適宜選擇水或有機溶劑。有機溶劑例如可列舉:酯類、脂肪族醇類、(聚)烷二醇醚系溶劑、酮類、醯胺系極性溶劑及內酯系極性溶劑。酯類例如可列舉:乙酸苄酯(沸點214℃)、苯甲酸乙酯(沸點213℃)、苯甲酸甲酯(沸點200℃)、丙二酸二乙酯(沸點199℃)、乙酸2-乙基己酯(沸點199℃)、乙酸2-丁氧基乙酯(沸點192℃)、乙酸3-甲氧基-3-甲基-丁酯(沸點188℃)、草酸二乙酯(沸點185℃)、乙醯乙酸乙酯(沸點181℃)、乙酸環己酯(沸點174℃)、乙酸3-甲氧基-丁酯(沸點173℃)、乙醯乙酸甲酯(沸點172℃)、3-乙氧基丙酸乙酯(沸點170℃)、乙酸2-乙基丁酯(沸點162℃)、丙酸異戊酯(沸點160℃)、丙二醇單甲醚丙酸酯(沸點160℃)、丙二醇單乙醚乙酸酯(沸點158℃)、乙酸戊酯(沸點150℃)或丙二醇單甲醚乙酸酯(沸點146℃)等。 Photosensitive black resin composition used in formation of the light shielding layer (B) The solvent to be contained may suitably be selected from water or an organic solvent depending on the dispersion stability of the light-shielding material to be dispersed and the solubility of the resin component to be added. Examples of the organic solvent include esters, aliphatic alcohols, (poly)alkyl glycol ether solvents, ketones, guanamine-based polar solvents, and lactone-based polar solvents. Examples of the esters include benzyl acetate (boiling point: 214 ° C), ethyl benzoate (boiling point: 213 ° C), methyl benzoate (boiling point: 200 ° C), diethyl malonate (boiling point: 199 ° C), acetic acid 2- Ethylhexyl ester (boiling point 199 ° C), 2-butoxyethyl acetate (boiling point 192 ° C), 3-methoxy-3-methyl-butyl acetate (boiling point 188 ° C), diethyl oxalate (boiling point) 185 ° C), ethyl acetate (boiling point 181 ° C), cyclohexyl acetate (boiling point 174 ° C), acetic acid 3-methoxy-butyl ester (boiling point 173 ° C), ethyl acetate methyl acetate (boiling point 172 ° C) , 3-ethoxypropionic acid ethyl ester (boiling point 170 ° C), 2-ethylbutyl acetate (boiling point 162 ° C), isoamyl propionate (boiling point 160 ° C), propylene glycol monomethyl ether propionate (boiling point 160 °C), propylene glycol monoethyl ether acetate (boiling point 158 ° C), amyl acetate (boiling point 150 ° C) or propylene glycol monomethyl ether acetate (boiling point 146 ° C) and the like.
另外,上述以外的溶劑例如可列舉:乙二醇單甲醚(沸 點124℃)、乙二醇單乙醚(沸點135℃)、丙二醇單乙醚(沸點133℃)、二乙二醇單甲醚(沸點193℃)、單乙醚(沸點135℃)、甲基卡必醇(沸點194℃)、乙基卡必醇(沸點202℃)、丙二醇單甲醚(沸點120℃)、丙二醇單乙醚(沸點133℃)、丙二醇第三丁醚(沸點153℃)或二丙二醇單甲醚(沸點188℃)等(聚)烷二醇醚系溶劑;乙酸乙酯(沸點77℃)、乙酸丁酯(沸點126℃)或乙酸異戊酯(沸點142℃)等脂肪族酯類;丁醇(沸點118℃)、3- 甲基-2-丁醇(沸點112℃)或3-甲基-3-甲氧基丁醇(沸點174℃)等脂肪族醇類;環戊酮或環己酮等酮類;二甲苯(沸點144℃)、乙基苯(沸點136℃)或溶劑石腦油(solvent naphtha)(石油餾分:沸點165℃~178℃)。 Further, examples of the solvent other than the above include ethylene glycol monomethyl ether (boiling). Point 124 ° C), ethylene glycol monoethyl ether (boiling point 135 ° C), propylene glycol monoethyl ether (boiling point 133 ° C), diethylene glycol monomethyl ether (boiling point 193 ° C), diethyl ether (boiling point 135 ° C), methyl card Alcohol (boiling point 194 ° C), ethyl carbitol (boiling point 202 ° C), propylene glycol monomethyl ether (boiling point 120 ° C), propylene glycol monoethyl ether (boiling point 133 ° C), propylene glycol tert-butyl ether (boiling point 153 ° C) or dipropylene glycol (poly)alkyl glycol ether solvent such as monomethyl ether (boiling point 188 ° C); aliphatic ester such as ethyl acetate (boiling point 77 ° C), butyl acetate (boiling point 126 ° C) or isoamyl acetate (boiling point 142 ° C) Class; butanol (boiling point 118 ° C), 3- An aliphatic alcohol such as methyl-2-butanol (boiling point 112 ° C) or 3-methyl-3-methoxybutanol (boiling point 174 ° C); a ketone such as cyclopentanone or cyclohexanone; xylene ( Boiling point 144 ° C), ethylbenzene (boiling point 136 ° C) or solvent naphtha (petroleum fraction: boiling point 165 ° C ~ 178 ° C).
進而,由於伴隨著透明基板的大型化而利用模具塗佈 (die coating)裝置的塗佈逐漸成為主流,故而為了實現適度的揮發性及乾燥性,較佳為含有30質量%~75質量%的沸點為150℃~200℃的溶劑混合溶劑。 Furthermore, it is coated by a mold due to an increase in size of the transparent substrate. Since the application of the die coating apparatus is becoming mainstream, in order to achieve moderate volatility and drying property, a solvent mixture solvent having a boiling point of 150 to 200 ° C is preferably contained in an amount of 30% by mass to 75% by mass.
可用於遮光層(B)的形成的感光性樹脂組成物的製造方法可列舉與遮光層(A)相同的方法。 The method for producing the photosensitive resin composition which can be used for the formation of the light-shielding layer (B) is the same as the method of the light-shielding layer (A).
如上所述,塗佈用以形成遮光層(A)的樹脂組成物並進行乾燥,於其上塗佈用以形成遮光層(B)的感光性樹脂組成物並進行乾燥後,經由遮罩,自曝光裝置照射紫外線,例如利用鹼性顯影液進行顯影。鹼性顯影液可使用四甲基氫氧化銨水溶液、鹼金屬氫氧化物的水溶液。顯影液中可添加例如0.01質量%~1質量%的非離子系界面活性劑等界面活性劑。 As described above, the resin composition for forming the light shielding layer (A) is applied and dried, and the photosensitive resin composition for forming the light shielding layer (B) is applied thereon and dried, and then passed through a mask. The ultraviolet light is irradiated from the exposure device, for example, development with an alkaline developer. As the alkaline developing solution, an aqueous solution of an aqueous solution of tetramethylammonium hydroxide or an alkali metal hydroxide can be used. For example, 0.01% by mass to 1% by mass of a surfactant such as a nonionic surfactant may be added to the developer.
所獲得的圖案其後藉由進行加熱處理而成為經圖案化 的樹脂BM。積層狀態的圖案的加熱處理較佳為例如於空氣、氮氣或真空中於150℃~300℃下連續地或階段性地處理0.25小時~5小時。另外,加熱處理的溫度更佳為180℃~250℃。 The obtained pattern is then patterned by heat treatment Resin BM. The heat treatment of the pattern in the laminated state is preferably carried out continuously or in stages at 150 ° C to 300 ° C for 0.25 hours to 5 hours, for example, under air, nitrogen or vacuum. Further, the temperature of the heat treatment is more preferably from 180 ° C to 250 ° C.
此外,上述樹脂BM的圖案形成方法亦可應用於遮光層(A)不含折射率1.4~1.8的微粒子的情況。 Further, the pattern forming method of the above resin BM can also be applied to the case where the light shielding layer (A) does not contain fine particles having a refractive index of 1.4 to 1.8.
其次,對樹脂BM的較佳的形狀進行說明。圖1是表示 本發明的黑矩陣基板的若干實施方式的概略圖。包含OD/T小的遮光層(A)及OD/T大的遮光層(B)的樹脂BM 11是於透明基板10的上方形成圖案。本發明的黑矩陣基板上所形成的樹脂BM必須如圖1(a)~圖1(e)所示般依序存在層,可為如下任一圖案:如圖1(a)的垂直的圖案、如圖1(b)的山型的圖案、如圖1(c)的倒山型的圖案、如圖1(d)的遮光層(B)的圖案小於遮光層(A)的圖案、如圖1(e)的將遮光層(B)的圖案配置為大於遮光層(A)的圖案。其中,為了縮窄樹脂BM的線寬而提高畫素的開口率,較佳為如圖1(a)~圖1(c)所示般遮光層(A)21與遮光層(B)22具有大致相同程度的寬度,更佳為如圖1(b)所示般積層為山型。另外,如圖2所示,在將遮光層(A)21與透明基板10接觸的部位的線寬設為L1,將遮光層(A)21與遮光層(B)22的邊界部的線寬設為L2,將遮光層(B)22的頂部的線寬設為L3的情況下,為了提高視認性,較佳為滿足L1>L2>L3的關係。進而,L1與L3的差較佳為3μm以下,更佳為1μm以下,進而較佳為0.5μm以下。 Next, a preferred shape of the resin BM will be described. Figure 1 is a representation A schematic view of several embodiments of a black matrix substrate of the present invention. The resin BM 11 including the light shielding layer (A) having a small OD/T and the light shielding layer (B) having a large OD/T is formed on the transparent substrate 10 in a pattern. The resin BM formed on the black matrix substrate of the present invention must have a layer sequentially as shown in FIG. 1(a) to FIG. 1(e), and may be any of the following patterns: a vertical pattern as shown in FIG. 1(a). The pattern of the mountain shape as shown in Fig. 1(b), the pattern of the inverted mountain pattern of Fig. 1(c), the pattern of the light shielding layer (B) of Fig. 1(d) is smaller than the pattern of the light shielding layer (A), The pattern of the light shielding layer (B) of FIG. 1(e) is arranged to be larger than the pattern of the light shielding layer (A). In order to narrow the line width of the resin BM and increase the aperture ratio of the pixel, it is preferable that the light shielding layer (A) 21 and the light shielding layer (B) 22 have the light shielding layer (A) 21 as shown in FIGS. 1( a ) to 1 ( c ). The width is approximately the same, and it is more preferable to laminate the mountain as shown in Fig. 1(b). Further, as shown in FIG. 2, the line width of the portion where the light shielding layer (A) 21 is in contact with the transparent substrate 10 is L1, and the line width of the boundary portion between the light shielding layer (A) 21 and the light shielding layer (B) 22 is set. When L2 is set and the line width of the top of the light shielding layer (B) 22 is L3, it is preferable to satisfy the relationship of L1>L2>L3 in order to improve visibility. Further, the difference between L1 and L3 is preferably 3 μm or less, more preferably 1 μm or less, still more preferably 0.5 μm or less.
<<黑矩陣基板的利用>> <<Using the black matrix substrate>>
本發明的黑矩陣基板可用於電子材料及各種顯示器(display)等。可有效利用本發明的黑矩陣基板的高光學密度且低光反射的特徵而用於電漿顯示面板(Plasma Display Panel,PDP)的隔離壁,介電體圖案、電極(導體電路)圖案或電子零件的配線圖案等遮 光圖像的製作。其中,為了提高彩色液晶顯示裝置等中所使用的彩色濾光片的顯示特性,較佳為製成於著色圖案的間隔部及周邊部分以及薄膜電晶體(thin-film transistor,TFT)的外部光側等設置有樹脂BM的黑矩陣基板。 The black matrix substrate of the present invention can be used for electronic materials, various displays, and the like. The utility model can effectively utilize the high optical density and low light reflection characteristics of the black matrix substrate of the invention for the partition wall of the plasma display panel (PDP), the dielectric pattern, the electrode (conductor circuit) pattern or the electron Part wiring pattern Production of light images. In order to improve the display characteristics of the color filter used in the color liquid crystal display device or the like, it is preferable to form the spacer and the peripheral portion of the colored pattern and the external light of the thin film transistor (TFT). A black matrix substrate provided with a resin BM is provided on the side.
<彩色濾光片> <Color Filter>
本發明所揭示的彩色濾光片基板利用本發明的黑矩陣基板而於不存在作為遮光層的樹脂BM的圖案的部分形成有經紅、綠、藍等著色的畫素。 In the color filter substrate disclosed in the present invention, a pixel colored by red, green, blue, or the like is formed in a portion where the pattern of the resin BM as the light shielding layer is not present by the black matrix substrate of the present invention.
本發明的彩色濾光片基板的製造方法例如可列舉如下 方法:於透明基板上形成樹脂BM後,形成具有紅(R)、綠(G)或藍(B)的色彩選擇性的畫素。亦可視需要於其上形成保護膜(over coat film)。保護膜例如可列舉:環氧膜、丙烯酸系環氧膜、丙烯酸系膜、矽氧烷聚合物系的膜、聚醯亞胺膜、含矽聚醯亞胺膜及聚醯亞胺矽氧烷膜。亦可於保護膜上進而形成透明導電膜。 透明導電膜例如可列舉銦錫氧化物(Indium tin oxide,ITO)等氧化物薄膜。膜厚0.1μm左右的ITO膜的製作方法例如可列舉濺鍍法(sputtering method)或真空蒸鍍法。畫素的材質例如可列舉:以僅使任意的光透射的方式控制了膜厚的無機膜、或經染色、分散有染料或分散有顏料的著色樹脂膜。 The method for producing the color filter substrate of the present invention is exemplified by the following Method: After forming the resin BM on the transparent substrate, a pixel having a color selectivity of red (R), green (G) or blue (B) is formed. An over coat film may also be formed thereon as needed. Examples of the protective film include an epoxy film, an acrylic epoxy film, an acrylic film, a siloxane polymer film, a polyimide film, a ruthenium-containing polyimide film, and a polyamidoxime. membrane. A transparent conductive film may be further formed on the protective film. Examples of the transparent conductive film include oxide films such as indium tin oxide (ITO). The method for producing the ITO film having a film thickness of about 0.1 μm may, for example, be a sputtering method or a vacuum deposition method. The material of the pixel is, for example, an inorganic film whose film thickness is controlled so as to transmit only arbitrary light, or a colored resin film which is dyed, dispersed with a dye or dispersed with a pigment.
本發明的彩色濾光片基板的畫素中所分散的顏料較佳 為耐光性、耐熱性及耐化學品性優異的顏料。 The pigment dispersed in the pixels of the color filter substrate of the present invention is preferably It is a pigment excellent in light resistance, heat resistance and chemical resistance.
紅色顏料例如可列舉:顏料紅(pigment red)(以下稱 為「PR」)9、PR48、PR97、PR122、PR123、PR144、PR149、PR166、PR168、PR177、PR179、PR180、PR190、PR192、PR209、PR215、PR216、PR217、PR220、PR223、PR224、PR226、PR227、PR228、PR240及PR254。 Examples of the red pigment include: pigment red (hereinafter referred to as "pigment red" (hereinafter referred to as "PR") 9, PR48, PR97, PR122, PR123, PR144, PR149, PR166, PR168, PR177, PR179, PR180, PR190, PR192, PR209, PR215, PR216, PR217, PR220, PR223, PR224, PR226, PR227 , PR228, PR240 and PR254.
橙色顏料例如可列舉:顏料橙(pigment orange)(以下 稱為「PO」)13、PO31、PO36、PO38、PO40、PO42、PO43、PO51、PO55、PO59、PO61、PO64、PO65及PO71。 Examples of the orange pigment include: pigment orange (hereinafter) It is called "PO") 13, PO31, PO36, PO38, PO40, PO42, PO43, PO51, PO55, PO59, PO61, PO64, PO65, and PO71.
黃色顏料例如可列舉:顏料黃(pigment yellow)(以下 稱為「PY」)PY12、PY13、PY14、PY17、PY20、PY24、PY83、PY86、PY93、PY94、PY95、PY109、PY110、PY117、PY125、PY129、PY137、PY138、PY139、PY147、PY148、PY150、PY153、PY154、PY166、PY168、PY173、PY180或PY185。 Examples of the yellow pigment include: pigment yellow (hereinafter It is called "PY") PY12, PY13, PY14, PY17, PY20, PY24, PY83, PY86, PY93, PY94, PY95, PY109, PY110, PY117, PY125, PY129, PY137, PY138, PY139, PY147, PY148, PY150, PY153, PY154, PY166, PY168, PY173, PY180 or PY185.
紫色顏料例如可列舉:顏料紫(pigment violet)(以下 稱為「PV」)19、PV23、PV29、PV30、PV32、PV36、PV37、PV38、PV40及PV50。 Examples of the purple pigment include: pigment violet (hereinafter It is called "PV") 19, PV23, PV29, PV30, PV32, PV36, PV37, PV38, PV40 and PV50.
藍色顏料例如可列舉:顏料藍(pigment blue)(以下稱 為「PB」)15、PB15:3、PB15:4、PB15:6、PB22、PB60、PB64及PB80。 Examples of the blue pigment include: pigment blue (hereinafter referred to as "pigment blue" (hereinafter referred to as It is "PB") 15, PB15:3, PB15:4, PB15:6, PB22, PB60, PB64 and PB80.
綠色顏料例如可列舉:顏料綠(pigment green)(以下稱 為「PG」)7、PG10、PG36及PG58。 Examples of the green pigment include: pigment green (hereinafter referred to as "pigment green" (hereinafter referred to as It is "PG") 7, PG10, PG36 and PG58.
該些顏料亦可視需要進行松香處理、酸性基處理或鹼性 處理等表面處理。另外,亦可添加顏料衍生物作為分散劑。 These pigments can also be rosin-treated, acid-based or alkaline. Processing and other surface treatments. Further, a pigment derivative may be added as a dispersing agent.
在本發明的彩色濾光片基板的畫素為分散有顏料的著 色樹脂膜的情況下,其形成所使用的黏合劑樹脂例如可列舉:丙烯酸系樹脂、聚乙烯醇、聚醯胺及聚醯亞胺,就耐熱性及耐化學品性的觀點而言,較佳為聚醯亞胺。 The pixel of the color filter substrate of the present invention is a pigment dispersed In the case of a color resin film, examples of the binder resin to be used for the formation thereof include an acrylic resin, polyvinyl alcohol, polyamine, and polyimine, and from the viewpoints of heat resistance and chemical resistance, Good for polyimine.
本發明的彩色濾光片基板亦可形成經固定的分隔件 (spacer)。所謂經固定的分隔件,是指固定於彩色濾光片基板的特定的位置,於製作液晶顯示裝置時與對向基板接觸的分隔件。 藉此,於與對向基板之間保持一定的間隙(gap),並於該間隙間填充液晶化合物。藉由形成經固定的分隔件,而於液晶顯示裝置的製造步驟中可省略散布球狀分隔件的步驟、或於密封劑(seal agent)內混練棒狀(rod shape)分隔件的步驟。 The color filter substrate of the present invention can also form a fixed spacer (spacer). The fixed spacer refers to a spacer that is fixed to a specific position of the color filter substrate and that is in contact with the opposite substrate when the liquid crystal display device is fabricated. Thereby, a certain gap is maintained between the opposing substrate and the liquid crystal compound is filled between the gaps. The step of dispersing the spherical spacer or the step of kneading the rod shape spacer in the seal agent may be omitted in the manufacturing step of the liquid crystal display device by forming the fixed spacer.
<液晶顯示裝置、發光裝置> <Liquid crystal display device, light-emitting device>
本發明的液晶顯示裝置依序包括上述彩色濾光片基板、液晶化合物及對向基板。 The liquid crystal display device of the present invention sequentially includes the color filter substrate, the liquid crystal compound, and the counter substrate.
另外,本發明的發光裝置的特徵在於:將本發明的彩色濾光片基板與發光元件貼合而成。 Further, the light-emitting device of the present invention is characterized in that the color filter substrate of the present invention is bonded to a light-emitting element.
發光元件較佳為有機EL元件。本發明的發光裝置可有效利用黑矩陣基板的高OD且低反射的特徵,有效遮避黑顯示下來自發光元件的多餘的光,並且抑制外部光的反射,從而獲得對比度高且清晰的顯示器。 The light emitting element is preferably an organic EL element. The light-emitting device of the present invention can effectively utilize the high OD and low-reflection characteristics of the black matrix substrate, effectively shields unnecessary light from the light-emitting element under black display, and suppresses reflection of external light, thereby obtaining a display with high contrast and sharpness.
圖3是表示發光裝置的一實施方式的概略剖面圖。 3 is a schematic cross-sectional view showing an embodiment of a light-emitting device.
圖3所示的發光裝置是藉由利用密封劑34將該彩色濾 光片基板20與作為發光元件的有機EL元件40貼合而構成。 The light-emitting device shown in FIG. 3 is used to filter the color filter by using the sealant 34. The light-film substrate 20 is bonded to the organic EL element 40 as a light-emitting element.
彩色濾光片基板20包括:藉由本發明的製造方法而製 造的黑矩陣基板,形成於其開口部的紅、綠或藍的畫素23~畫素25,及保護層26。此處彩色濾光片基板20所具備的黑矩陣基板包括:基板10、積層遮光層(A)21及遮光層(B)22而成的樹脂BM 11。 The color filter substrate 20 includes: by the manufacturing method of the present invention The resulting black matrix substrate has red, green or blue pixels 23 to 25 formed in the opening portion thereof, and a protective layer 26. Here, the black matrix substrate provided in the color filter substrate 20 includes a substrate 10, a resin layer BM 11 in which a light shielding layer (A) 21 and a light shielding layer (B) 22 are laminated.
有機EL元件40包括:透明電極28、有機電致發光層 (以下稱為「有機EL層」)29、背面電極層30、絕緣膜31、基板 32、及與外部電源連通的提取电极33。此處有機EL層包括:電洞傳輸層、發光層及電子傳輸層。 The organic EL element 40 includes a transparent electrode 28 and an organic electroluminescent layer. (hereinafter referred to as "organic EL layer") 29, back electrode layer 30, insulating film 31, substrate 32. An extraction electrode 33 that is in communication with an external power source. Here, the organic EL layer includes a hole transport layer, a light emitting layer, and an electron transport layer.
圖3中,彩色濾光片基板20與有機EL元件40之間有 空隙,但亦可視需要存在樹脂或乾燥劑等。 In FIG. 3, between the color filter substrate 20 and the organic EL element 40 A void, but a resin or a desiccant may be present as needed.
構成有機EL元件40的基板32的材質例如可列舉:玻 璃、膜及塑膠等透明的材質,以及鋁、鉻或不鏽鋼(stainless)或陶瓷等不透明的材質。 The material of the substrate 32 constituting the organic EL element 40 is, for example, glass. Transparent materials such as glass, film and plastic, and opaque materials such as aluminum, chrome or stainless steel or ceramics.
絕緣膜31防止透明電極28與背面電極層30的通電。 絕緣膜31的材質例如可列舉聚醯亞胺樹脂、丙烯酸系樹脂、環氧樹脂及矽酮樹脂,可藉由使用感光性材料利用光微影法而形成。 The insulating film 31 prevents energization of the transparent electrode 28 and the back electrode layer 30. Examples of the material of the insulating film 31 include a polyimide resin, an acrylic resin, an epoxy resin, and an anthrone resin, which can be formed by photolithography using a photosensitive material.
背面電極層30是位於基板32與有機EL層29之間,為 藉由對背面電極層30與透明電極28之間施加電壓而使有機EL層發光的構造。背面電極層的材質例如可列舉:鎂、鋁、銦、鋰、銀或氧化鋁。背面電極層的膜厚通常為0.01μm~1μm,例如可藉 由蒸鍍或濺鍍(sputter)等成膜金屬薄膜後,利用藉由光微影法的圖案化形成。 The back electrode layer 30 is located between the substrate 32 and the organic EL layer 29, A structure in which the organic EL layer emits light by applying a voltage between the back electrode layer 30 and the transparent electrode 28. The material of the back electrode layer may, for example, be magnesium, aluminum, indium, lithium, silver or aluminum oxide. The film thickness of the back electrode layer is usually 0.01 μm to 1 μm, for example, After forming a metal thin film by vapor deposition, sputtering, or the like, it is formed by patterning by photolithography.
有機EL層29的光較佳為白色光。根據白色光的波長分 佈而適宜變更彩色濾光片基板20的畫素23~畫素25的色調,藉此可實現具有所需的色彩再現範圍的發光裝置。 The light of the organic EL layer 29 is preferably white light. According to the wavelength of white light It is preferable to change the color tone of the pixels 23 to 25 of the color filter substrate 20, thereby realizing a light-emitting device having a desired color reproduction range.
發光層的材質例如可列舉:具有環五胺 (cyclopentamine)、四苯基丁二烯、三苯基胺、噁二唑、吡唑并喹啉、二苯乙烯基苯、二苯乙烯基伸芳基、矽雜環戊二烯(silole)、噻吩、吡啶、紫環酮(perinone)、苝、寡聚噻吩及三反丁烯二醯胺等骨架的有機化合物,以及噁二唑二聚物、吡唑啉二聚物等色素系材料。另外,可列舉:羥基喹啉鋁錯合物、苯并羥基喹啉鈹錯合物、苯并噁唑鋅錯合物、苯并噻唑鋅錯合物、偶氮甲基鋅錯合物、卟啉鋅錯合物及銪錯合物。可列舉:具有Al、Zn、Be、Tb、Eu或Dy等稀土類金屬作為中心金屬,且具有噁二唑、噻二唑、苯基吡啶、苯基苯并咪唑或喹啉結構等作為配位子的金屬錯合物等金屬錯合物系材料。可列舉:聚對苯乙炔(polyparaphenylene vinylene)衍生物、聚噻吩衍生物、聚對苯衍生物、聚矽烷衍生物、聚乙炔衍生物等、聚茀衍生物及聚乙烯基咔唑衍生物等高分子系材料。發光層的膜厚通常為0.05μm~5μm,例如可利用蒸鍍法、旋轉塗佈法、印刷法或噴墨法(ink jet method)形成。 The material of the light-emitting layer is, for example, a cyclopentamine (cyclopentamine), tetraphenylbutadiene, triphenylamine, oxadiazole, pyrazoloquinoline, distyrylbenzene, distyryl extended aryl, silole, thiophene An organic compound having a skeleton such as pyridine, perinone, anthracene, oligothiophene or tridodecene diamine, and a pigment-based material such as an oxadiazole dimer or a pyrazoline dimer. Further, examples thereof include hydroxyquinoline aluminum complex, benzohydroxyquinolinium complex, benzoxazole zinc complex, benzothiazole zinc complex, azomethyl zinc complex, and hydrazine. Zinc porphyrin complex and ruthenium complex. A rare earth metal such as Al, Zn, Be, Tb, Eu or Dy is used as a central metal, and has a oxadiazole, thiadiazole, phenylpyridine, phenylbenzimidazole or quinoline structure as a coordination. A metal complex compound such as a metal complex. Examples thereof include polyparaphenylene vinylene derivatives, polythiophene derivatives, polyparaphenylene derivatives, polydecane derivatives, polyacetylene derivatives, polyfluorene derivatives, and polyvinylcarbazole derivatives. Molecular material. The film thickness of the light-emitting layer is usually 0.05 μm to 5 μm, and can be formed, for example, by a vapor deposition method, a spin coating method, a printing method, or an ink jet method.
為了使有機EL層29的發光光透射,透明電極28的透 射率較佳為80%~99%,更佳為90%~99%。透明電極的材質例如 可列舉:ITO、氧化銦、氧化鋅或二氧化錫。透明電極的膜厚通常為0.1μm~1μm,可藉由蒸鍍法或濺鍍法等成膜金屬氧化物的薄膜後,以利用光微影法的圖案化形成。 In order to transmit the light of the organic EL layer 29, the transparent electrode 28 is transparent. The firing rate is preferably from 80% to 99%, more preferably from 90% to 99%. The material of the transparent electrode is for example There may be mentioned ITO, indium oxide, zinc oxide or tin dioxide. The thickness of the transparent electrode is usually 0.1 μm to 1 μm, and a thin film of a metal oxide can be formed by a vapor deposition method or a sputtering method, and then patterned by photolithography.
提取电极33的材質例如可列舉:銀、鋁、金、鉻、鎳或鉬。 The material of the extraction electrode 33 is, for example, silver, aluminum, gold, chromium, nickel or molybdenum.
進而,藉由將使用聚醯亞胺樹脂膜作為基板的可撓性彩色濾光片基板與發光元件貼合,可獲得可撓性發光裝置。並且,可將上述可撓性彩色濾光片基板與作為發光元件的有機EL元件貼合而製造可撓性有機EL顯示器。 Further, a flexible light-emitting device can be obtained by bonding a flexible color filter substrate using a polyimide film as a substrate to a light-emitting element. Further, the flexible color filter substrate can be bonded to an organic EL element as a light-emitting element to produce a flexible organic EL display.
[實施例] [Examples]
以下,列舉實施例及比較例對本發明進行更詳細的說明,但本發明並不限定於該些實施例及比較例。 Hereinafter, the present invention will be described in more detail by way of examples and comparative examples, but the invention is not limited to the examples and comparative examples.
<評價方法> <Evaluation method>
[微粒子的折射率] [Refractive index of microparticles]
利用貝克線法求出折射率。準備30個與目標微粒子為相同的物質的樣品,測定逐個的折射率後,藉由它們的平均值算出折射率。 The refractive index was determined by the Beck line method. A sample of 30 substances which are the same as the target fine particles was prepared, and the refractive indices were measured one by one, and the refractive index was calculated from the average value thereof.
[光學密度(OD值)] [Optical density (OD value)]
於厚度0.7mm的無鹼玻璃上形成預定的膜厚的遮光層,使用顯微分光器(MCPD2000;大塚電子製造)測定入射光及透射光各自的強度,根據下述數式(7)算出,於波長380nm~700nm的區域以5nm為單位進行求算,再利用所求出的值的平均值而求出。 A light-shielding layer having a predetermined film thickness is formed on an alkali-free glass having a thickness of 0.7 mm, and the intensity of each of incident light and transmitted light is measured using a microscopic spectroscope (MCPD2000; manufactured by Otsuka Electronics Co., Ltd.), and is calculated according to the following formula (7). The region having a wavelength of 380 nm to 700 nm is calculated in units of 5 nm, and is obtained by using the average value of the obtained values.
OD值=log10(I0/I)…式(7) OD value = log 10 (I 0 /I)... Equation (7)
I0:入射光強度 I 0 : incident light intensity
I:透射光強度。 I: transmitted light intensity.
[反射色度] [reflective chromaticity]
於厚度0.7mm的無鹼玻璃上形成預定的膜厚的樹脂BM,使用紫外可見分光光度計(UV-2450;島津製作所製造),進行自玻璃面起的入射角為5°處的絕對反射測定。根據所獲得的光譜(spectrum),算出藉由國際照明委員會(International Commission on Illumination,CIE)L*a*b*表色系統計算所得的D65光源下的色度值(a*、b*)及藉由CIE XYZ表色系統計算所得的D65光源下的Y(反射率),基於以下判斷基準而判定反射色度。 A resin BM having a predetermined film thickness was formed on an alkali-free glass having a thickness of 0.7 mm, and an absolute reflection measurement at an incident angle of 5° from the glass surface was carried out using an ultraviolet-visible spectrophotometer (UV-2450; manufactured by Shimadzu Corporation). . Calculate the chromaticity values (a * , b * ) of the D65 light source calculated by the International Commission on Illumination (CIE) L * a * b * color system based on the obtained spectrum. The Y (reflectance) under the D65 light source calculated by the CIE XYZ color system is used, and the reflection chromaticity is determined based on the following criterion.
A:反射率為4.2以上且未達4.7,且a*及b*為1.0以下 A: The reflectance is 4.2 or more and less than 4.7, and a * and b * are 1.0 or less.
B:反射率為4.2以上且未達4.7,且a*及b*超過1.0且為2.0以下 B: the reflectance is 4.2 or more and less than 4.7, and a * and b * exceed 1.0 and are 2.0 or less.
C:反射率為4.2以上且未達4.7,且a*或b*超過2.0 C: the reflectance is 4.2 or more and less than 4.7, and a * or b * exceeds 2.0.
D:反射率為4.7以上且未達5.2,且a*及b*為1.0以下 D: the reflectance is 4.7 or more and less than 5.2, and a * and b * are 1.0 or less.
E:反射率為4.7以上且未達5.2,且a*及b*超過1.0且為2.0以下 E: the reflectance is 4.7 or more and less than 5.2, and a * and b * exceed 1.0 and are 2.0 or less.
F:反射率為4.7以上且未達5.2,且a*或b*超過2.0 F: the reflectance is 4.7 or more and less than 5.2, and a * or b * exceeds 2.0.
G:反射率為5.2以上。 G: The reflectance is 5.2 or more.
[表面電阻值] [surface resistance value]
使用Hiresta UP MCP-HT450(三菱化學分析(Mitsubishi Chemical Analytic)製造),於外加電壓10V下測定表面電阻值(Ω/□),基於以下判斷基準判定絕緣性。 The surface resistance value (Ω/□) was measured at a voltage of 10 V using a Hiresta UP MCP-HT450 (manufactured by Mitsubishi Chemical Analytic), and the insulation property was determined based on the following criteria.
優:為測定限界以上(1015Ω/□以上)而具有極高的絕緣性 Excellent: extremely high insulation for measuring limits above (10 15 Ω/□)
良:為108Ω/□以上且未達1015Ω/□而具有充分的絕緣性 Good: sufficient insulation for 10 8 Ω/□ or more and less than 10 15 Ω/□
不良:未達108Ω/□而絕緣性不充分。 Bad: Less than 10 8 Ω/□ and insufficient insulation.
[粒徑] [particle size]
微粒子的一次粒徑是藉由如下方式算出:利用電子顯微鏡分別觀察隨機選擇的100個微粒子的一次粒徑,並求出其平均值。 The primary particle diameter of the fine particles was calculated by observing the primary particle diameters of 100 randomly selected microparticles by an electron microscope, and obtaining the average value thereof.
<製造例> <Manufacturing example>
(聚醯胺酸A-1的合成) (Synthesis of polyaminic acid A-1)
添入4,4'-二胺基苯醚(0.30莫耳當量)、對苯二胺(0.65莫耳當量)、雙(3-胺基丙基)四甲基二矽氧烷(0.05莫耳當量)、γ-丁內酯850g及N-甲基-2-吡咯啶酮850g,添加3,3',4,4'-氧二鄰苯二甲酸二酐(0.9975莫耳當量),於80℃下反應3小時。進而添加順丁烯二酸酐(0.02莫耳當量),於80℃下反應1小時,而獲得聚醯胺酸A-1(聚合物濃度20質量%)溶液。 Add 4,4'-diaminophenyl ether (0.30 molar equivalent), p-phenylenediamine (0.65 molar equivalent), bis(3-aminopropyl)tetramethyldioxane (0.05 mole) Equivalent), 850 g of γ-butyrolactone and 850 g of N-methyl-2-pyrrolidone, adding 3,3',4,4'-oxydiphthalic dianhydride (0.9975 mol equivalent) at 80 The reaction was carried out at ° C for 3 hours. Further, maleic anhydride (0.02 mol equivalent) was added, and the mixture was reacted at 80 ° C for 1 hour to obtain a solution of polyproline A-1 (polymer concentration: 20% by mass).
(聚醯胺酸A-2的合成) (Synthesis of polyaminic acid A-2)
添入4,4'-二胺基苯醚(0.95莫耳當量)、雙(3-胺基丙基)四甲基二矽氧烷(0.05莫耳當量)及γ-丁內酯1700g(100%),添加均苯四甲酸二酐(0.49莫耳當量)及二苯甲酮四羧酸二酐(0.50 莫耳當量),於80℃下反應3小時。進而添加順丁烯二酸酐(0.02莫耳當量),進而於80℃下反應1小時,而獲得聚醯胺酸A-2(聚合物濃度20質量%)溶液。 Add 4,4'-diaminophenyl ether (0.95 mole equivalent), bis(3-aminopropyl)tetramethyldioxane (0.05 molar equivalent) and γ-butyrolactone 1700 g (100) %), adding pyromellitic dianhydride (0.49 molar equivalent) and benzophenone tetracarboxylic dianhydride (0.50) Mohr equivalent), reacted at 80 ° C for 3 hours. Further, maleic anhydride (0.02 mol equivalent) was added, and further reacted at 80 ° C for 1 hour to obtain a solution of polyglycine A-2 (polymer concentration: 20% by mass).
(丙烯酸系聚合物(P-1)的合成) (Synthesis of acrylic polymer (P-1))
向1000cc的四口燒瓶(flask with four necks)中添入異丙醇100g,一面將其於油浴(oil bath)中保持為80℃並進行氮氣密封(nitrogen seal)、攪拌,一面利用滴液漏斗(dropping funnel)歷時30分鐘滴加甲基丙烯酸甲酯30g、苯乙烯40g、甲基丙烯酸30g及N,N-偶氮雙異丁腈2g的混合液。其後繼續反應4小時後,添加對苯二酚單甲醚1g後恢復至常溫而完成聚合。其結果獲得含有甲基丙烯酸甲酯/甲基丙烯酸/苯乙烯共聚物(質量比30/40/30)的溶液。進而於該溶液中添加異丙醇100g後,一面使其保持於75℃,一面添加甲基丙烯酸縮水甘油醚40g與三乙基苄基氯化銨3g並使之反應3小時,利用純化水進行再沈澱、過濾、乾燥,藉此獲得重量平均分子量(Mw,以四氫呋喃作為載體於溫度23℃下利用凝膠滲透層析法進行測定,使用利用標準聚苯乙烯的校準曲線進行換算所得的分子量)40,000、酸值110(mgKOH/g)的丙烯酸系聚合物(P-1)粉末。此處甲基丙烯酸縮水甘油醚的反應率是根據反應前後的聚合物酸值的變化而求出,結果為70%,加成量為0.73當量。 To a 1000 cc four-neck flask (flask with four necks), 100 g of isopropyl alcohol was added thereto, and the mixture was kept at 80 ° C in an oil bath, and subjected to a nitrogen seal and stirring. A dropping funnel was added dropwise a mixture of 30 g of methyl methacrylate, 40 g of styrene, 30 g of methacrylic acid and 2 g of N,N-azobisisobutyronitrile over 30 minutes. After the reaction was continued for 4 hours, 1 g of hydroquinone monomethyl ether was added, and the mixture was returned to normal temperature to complete the polymerization. As a result, a solution containing a methyl methacrylate/methacrylic acid/styrene copolymer (mass ratio: 30/40/30) was obtained. After adding 100 g of isopropyl alcohol to the solution, 40 g of glycidyl methacrylate and 3 g of triethylbenzylammonium chloride were added and allowed to react for 3 hours while maintaining the temperature at 75 ° C, and the mixture was purified with purified water. Reprecipitation, filtration, and drying, thereby obtaining a weight average molecular weight (Mw, which was measured by gel permeation chromatography at a temperature of 23 ° C using tetrahydrofuran as a carrier, and a molecular weight converted using a calibration curve using standard polystyrene) 40,000, acrylic acid (P-1) powder having an acid value of 110 (mgKOH/g). Here, the reaction rate of glycidyl methacrylate was determined from the change in the acid value of the polymer before and after the reaction, and as a result, it was 70%, and the amount of addition was 0.73 equivalent.
(遮光材料分散液Bk1的製作) (Production of light-shielding material dispersion Bk1)
熱電漿法是將平均一次粒徑為40nm的二氧化鈦粉末4.0kg 投入至反應爐中後,以爐內線速度3cm/sec通入氨氣(ammonia gas),於爐內溫度750℃下進行6小時的反應,而獲得氮氧化鈦(粒徑:40nm,鈦含量:70.6質量%,氮含量:18.8質量%,氧含量:8.64質量%)3.2kg。將該氮氧化鈦(96g)、聚醯胺酸溶液A-1(120g)、γ-丁內酯(114g)、N-甲基-2-吡咯啶酮(538g)及3-甲基-3-甲氧基乙酸丁酯(132g)添入至儲罐(tank),利用均質攪拌機(homomixer)(特殊機化製造)攪拌1小時後,使用具備70%填充有0.05mmφ氧化鋯珠(YTZ ball;尼卡特(NIKKATO)製造)的離心分離分離器的Ultra Apex Mill(壽工業製造)以轉速8m/s進行2小時分散,而獲得固體成分濃度12質量%、顏料/樹脂(質量比)=80/20的遮光材料分散液Bk1。 The thermoelectric plasma method is to apply 4.0 kg of titanium dioxide powder having an average primary particle diameter of 40 nm. After being charged into the reaction furnace, ammonia gas was introduced at a linear velocity of 3 cm/sec in the furnace, and a reaction was carried out at a furnace temperature of 750 ° C for 6 hours to obtain titanium oxynitride (particle diameter: 40 nm, titanium content: 70.6 mass%, nitrogen content: 18.8% by mass, oxygen content: 8.64 mass%) 3.2 kg. The titanium oxynitride (96 g), polylysine solution A-1 (120 g), γ-butyrolactone (114 g), N-methyl-2-pyrrolidone (538 g), and 3-methyl-3 - butyl methoxyacetate (132 g) was added to a tank, and stirred for 1 hour using a homomixer (manufactured by a special machine), and then used with a 70% filled zirconia beads of 0.05 mmφ (YTZ ball) The Ultra Apex Mill (manufactured by Sika Industrial Co., Ltd.) of the centrifugal separation separator manufactured by NIKKATO was dispersed at a number of revolutions of 8 m/s for 2 hours to obtain a solid content concentration of 12% by mass and a pigment/resin (mass ratio) = 80. /20 of the light-shielding material dispersion Bk1.
(遮光材料分散液Bk2的製作) (Production of light-shielding material dispersion Bk2)
使用氮化鈦粒子(和光純藥工業股份有限公司製造;粒徑:50nm,鈦含量:74.3質量%,氮含量:20.3質量%,氧含量:2.94質量%)作為顏料,除此以外,以與遮光材料分散液Bk1的製作相同的方式獲得遮光材料分散液Bk2。 Titanium nitride particles (manufactured by Wako Pure Chemical Industries, Ltd.; particle diameter: 50 nm, titanium content: 74.3 mass%, nitrogen content: 20.3% by mass, oxygen content: 2.94% by mass) were used as pigments, and The light-shielding material dispersion Bk1 was obtained in the same manner as in the production of the light-shielding material dispersion Bk1.
(遮光材料分散液Bk3的製作) (Production of light-shielding material dispersion Bk3)
使用碳黑(MA100;三菱化學股份有限公司製造;粒徑:24nm)作為顏料,除此以外,以與遮光材料分散液Bk1的製作相同的方式獲得遮光材料分散液Bk3。 The light-shielding material dispersion liquid Bk3 was obtained in the same manner as the production of the light-shielding material dispersion liquid Bk1, except that carbon black (MA100; manufactured by Mitsubishi Chemical Corporation; particle size: 24 nm) was used as the pigment.
(遮光材料分散液Bk4的製作) (Production of light-shielding material dispersion Bk4)
將氮化鈦粒子(和光純藥工業股份有限公司製造;粒徑:50 nm,鈦含量:74.3質量%,氮含量:20.3質量%,氧含量:2.94質量%)(200g)、丙烯酸系聚合物(P-1)的3-甲基-3-甲氧基丁醇45質量%溶液(100g)及丙二醇第三丁醚(700g)添入至儲罐中,利用均質攪拌機攪拌1小時後,使用具備70%填充有0.05mmφ氧化鋯珠的離心分離分離器的Ultra Apex Mill以轉速8m/s進行2小時分散,而獲得固體成分濃度24.5質量%、顏料/樹脂(質量比)=82/18的遮光材料分散液Bk4。 Titanium nitride particles (manufactured by Wako Pure Chemical Industries Co., Ltd.; particle size: 50 Nm, titanium content: 74.3 mass%, nitrogen content: 20.3% by mass, oxygen content: 2.94% by mass) (200 g), acrylic polymer (P-1) 3-methyl-3-methoxybutanol 45 The mass % solution (100 g) and propylene glycol tert-butyl ether (700 g) were added to the storage tank, and after stirring for 1 hour with a homomixer, Ultra Apex Mill equipped with a centrifugal separator having 70% of zirconia beads filled with 0.05 mmφ was used. The dispersion was carried out for 2 hours at a number of revolutions of 8 m/s to obtain a light-shielding material dispersion liquid Bk4 having a solid content concentration of 24.5% by mass and a pigment/resin (mass ratio) of 82/18.
(白色微粒子分散液WD1的製作) (production of white fine particle dispersion WD1)
將作為白色微粒子的氧化矽(「AEROSIL」(註冊商標)OX50;日本艾羅技(Nippon Aerosil)股份有限公司製造;粒徑:40nm,折射率:1.45)(96g)、聚醯胺酸溶液A-1(120g)、γ-丁內酯(114g)、N-甲基-2吡咯啶酮(538g)及3-甲基-3-甲氧基乙酸丁酯(132g)添入至儲罐中,利用均質攪拌機攪拌1小時後,使用具備70%填充有0.05mmφ氧化鋯珠的離心分離分離器的Ultra Apex Mill以轉速8m/s進行2小時分散,而獲得固體成分濃度12質量%、顏料/樹脂(質量比)=80/20的白色微粒子分散液WD1。 Cerium oxide as white fine particles ("AEROSIL" (registered trademark) OX50; manufactured by Nippon Aerosil Co., Ltd.; particle size: 40 nm, refractive index: 1.45) (96 g), poly-proline solution A- 1 (120 g), γ-butyrolactone (114 g), N-methyl-2-pyrrolidone (538 g) and 3-methyl-3-methoxyacetic acid butyl ester (132 g) were added to the storage tank, After stirring for 1 hour with a homomixer, an Ultra Apex Mill equipped with a centrifugal separator of 70% zirconia beads of 70% was dispersed at a number of revolutions of 8 m/s for 2 hours to obtain a solid content concentration of 12% by mass, pigment/resin. (mass ratio) = 80/20 white fine particle dispersion WD1.
(白色微粒子分散液WD2的製作) (production of white fine particle dispersion WD2)
使用碳酸鈣(CWS-50;堺化學工業股份有限公司製造;粒徑:60nm,折射率:1.57)作為白色微粒子,除此以外,以與白色微粒子分散液WD1的製作相同的方式獲得白色微粒子分散液WD2。 White fine particle dispersion was obtained in the same manner as in the production of the white fine particle dispersion WD1, except that calcium carbonate (CWS-50; manufactured by Seiko Chemical Co., Ltd.; particle diameter: 60 nm, refractive index: 1.57) was used as the white fine particles. Liquid WD2.
(白色微粒子分散液WD3的製作) (Production of white particle dispersion WD3)
使用硫酸鋇(BF-20;堺化學工業股份有限公司製造;粒徑:30nm,折射率:1.64)作為白色微粒子,除此以外,以與白色微粒子分散液WD1的製作相同的方式獲得白色微粒子分散液WD3。 White fine particle dispersion was obtained in the same manner as in the production of the white fine particle dispersion WD1, except that barium sulfate (BF-20; manufactured by Seiko Chemical Industry Co., Ltd.; particle diameter: 30 nm, refractive index: 1.64) was used as the white fine particles. Liquid WD3.
(白色微粒子分散液WD4的製作) (production of white particle dispersion WD4)
使用氧化鋁(「AEROXIDE」(註冊商標)Alu C;日本艾羅技股份有限公司製造;粒徑:13nm,折射率:1.76)作為白色微粒子,除此以外,以與白色微粒子分散液WD1的製作相同的方式獲得白色微粒子分散液WD4。 Alumina ("AEROXIDE" (registered trademark) Alu C; manufactured by Japan Aerotech Co., Ltd.; particle size: 13 nm, refractive index: 1.76) was used as the white fine particles, and was produced in the same manner as the white fine particle dispersion WD1. The way to obtain the white particle dispersion WD4.
(白色微粒子分散液WD5的製作) (production of white particle dispersion WD5)
使用硫酸鋇(BF-40;堺化學工業股份有限公司製造;粒徑:10nm,折射率:1.64)作為白色微粒子,除此以外,以與白色微粒子分散液WD1的製作相同的方式獲得白色微粒子分散液WD5。 White fine particle dispersion was obtained in the same manner as in the production of the white fine particle dispersion WD1, except that barium sulfate (BF-40; manufactured by Seiko Chemical Industry Co., Ltd.; particle diameter: 10 nm, refractive index: 1.64) was used as the white fine particles. Liquid WD5.
(白色微粒子分散液WD6的製作) (Production of white fine particle dispersion WD6)
使用硫酸鋇(BF-1L;堺化學工業股份有限公司製造;粒徑:100nm,折射率:1.64)作為白色微粒子,除此以外,以與白色微粒子分散液WD1的製作相同的方式獲得白色微粒子分散液WD6。 White fine particle dispersion was obtained in the same manner as in the production of the white fine particle dispersion WD1, except that barium sulfate (BF-1L; manufactured by Seiko Chemical Co., Ltd.; particle diameter: 100 nm, refractive index: 1.64) was used as the white fine particles. Liquid WD6.
(白色微粒子分散液WD7的製作) (Production of white particle dispersion WD7)
使用硫酸鋇(B-30;堺化學工業股份有限公司製造;粒徑:300nm,折射率:1.64)作為白色微粒子,除此以外,以與白色微粒子分散液WD1的製作相同的方式獲得白色微粒子分散液WD7。 White fine particle dispersion was obtained in the same manner as in the production of the white fine particle dispersion WD1, except that barium sulfate (B-30; manufactured by Seiko Chemical Industry Co., Ltd.; particle diameter: 300 nm, refractive index: 1.64) was used as the white fine particles. Liquid WD7.
(微粒子分散液WD8的製作) (Production of Microparticle Dispersion WD8)
使用丙烯酸系樹脂微粒子(FS-106;日本塗料股份有限公司 製造;粒徑:100nm,折射率:1.47)作為微粒子,除此以外,以與白色微粒子分散液WD1的製作相同的方式獲得微粒子分散液WD8。 Acrylic resin microparticles (FS-106; Japan Paint Co., Ltd. The fine particle dispersion WD8 was obtained in the same manner as in the production of the white fine particle dispersion WD1, except that the particle diameter was 100 nm, and the refractive index was 1.47.
(白色微粒子分散液WD22的製作) (production of white particle dispersion WD22)
將氯化鎂2.65質量%水溶液4.24kg與氟化銨2.09重量%水溶液4.14kg一面攪拌一面混合,獲得氟化鎂水合物的膠體(colloid)粒子的漿料(slurry)8.38kg。繼而使用超濾裝置進行濃縮,獲得氟化鎂濃度為5.9質量%的氟化鎂水合物水性溶膠(sol)1.27kg。針對該溶膠726g,進而利用旋轉蒸發器(rotary evaporator)於減壓下一面連續地充入(charge)異丙醇9升(liter)一面進行溶劑置換,獲得作為氟化鎂水合物的異丙醇溶膠的白色微粒子分散液WD22(濃度:8.9質量%,粒徑:30nm,折射率:1.38)。 4.24 kg of a 2.65 mass% aqueous solution of magnesium chloride and 4.14 kg of an ammonium fluoride aqueous solution of 2.09 wt% were mixed while stirring to obtain 8.38 kg of a slurry of colloid particles of magnesium fluoride hydrate. Subsequently, the mixture was concentrated using an ultrafiltration apparatus to obtain 1.27 kg of a magnesium fluoride hydrate aqueous sol (sol) having a magnesium fluoride concentration of 5.9% by mass. Further, 726 g of the sol was further subjected to solvent replacement while continuously charging 9 liters of isopropyl alcohol under reduced pressure by a rotary evaporator to obtain isopropanol as magnesium fluoride hydrate. White fine particle dispersion WD22 of sol (concentration: 8.9% by mass, particle diameter: 30 nm, refractive index: 1.38).
(白色微粒子分散液WD23的製作) (production of white fine particle dispersion WD23)
使用氧化鈦(TTO-55(A);石原產業股份有限公司製造;粒徑:40nm,折射率:2.71)作為白色微粒子,除此以外,以與白色微粒子分散液WD1的製作相同的方式獲得白色微粒子分散液WD23。 White was obtained in the same manner as in the production of the white fine particle dispersion WD1 except that titanium oxide (TTO-55 (A); manufactured by Ishihara Sangyo Co., Ltd.; particle diameter: 40 nm, refractive index: 2.71) was used as the white fine particles. Microparticle dispersion WD23.
(實施例1) (Example 1)
將遮光材料分散液Bk1(364g)與白色微粒子分散液WD1(364g)混合後,添加聚醯胺酸A-1(63g)、γ-丁內酯(82g)、N-甲基-2-吡咯啶酮(87g)、3-甲基-3-甲氧基乙酸丁酯(39g)及界面活性劑LC951(1g;楠本化成製造),獲得總固體成分濃度10質量 %、遮光材料/白色微粒子/樹脂(質量比)=35/35/30的黑色樹脂組成物LL1。此外,樹脂包含分散液中的聚醯胺酸及界面活性劑的不揮發成分。 After mixing the light-shielding material dispersion Bk1 (364 g) with the white fine particle dispersion WD1 (364 g), poly-proline acid A-1 (63 g), γ-butyrolactone (82 g), and N-methyl-2-pyrrole were added. Acetone (87g), 3-methyl-3-methoxyacetic acid butyl ester (39g) and surfactant LC951 (1g; manufactured by Nanben Chemical Co., Ltd.) to obtain a total solid concentration of 10 masses %, light-shielding material / white fine particle / resin (mass ratio) = 35/35/30 black resin composition LL1. Further, the resin contains a polyacetin in the dispersion and a nonvolatile component of the surfactant.
於遮光材料分散液Bk4(569.9g)中添加將作為多官能 單體的雙苯氧基乙醇茀二丙烯酸酯的丙二醇單甲醚乙酸酯50質量%溶液(18.7g)及二季戊四醇六丙烯酸酯(DHPA;日本化藥股份有限公司製造)的丙二醇單甲醚乙酸酯50質量%溶液(25.9g)、作為光聚合起始劑的Irgacure(註冊商標)369(12.9g)、Adeka(註冊商標)Optomer N-1919(3.5g;旭電化工業股份有限公司製造)、N,N'-四乙基-4,4'-二胺基二苯甲酮(1.3g)及矽酮系界面活性劑的丙二醇單甲醚乙酸酯10質量%溶液(3.6g)溶解於3-甲氧基-丁基乙酸3-甲酯(341.5g)及丙二醇單甲醚乙酸酯(22.7g)中而成的溶液,而獲得總固體成分濃度18質量%、顏料/樹脂(質量比)=70/30的感光性樹脂組成物UL1。此外,樹脂含有分散液中的丙烯酸系聚合物(P-1)、多官能單體、光聚合起始劑、及界面活性劑的不揮發成分。 Addition to the light-shielding material dispersion Bk4 (569.9g) will be used as a polyfunctional Monopropylene propylene glycol monomethyl ether acetate 50% by mass solution (18.7g) and dipentaerythritol hexaacrylate (DHPA; manufactured by Nippon Kayaku Co., Ltd.) propylene glycol monomethyl ether Acetate 50% by mass solution (25.9 g), Irgacure (registered trademark) 369 (12.9 g) as a photopolymerization initiator, Adeka (registered trademark) Optomer N-1919 (3.5 g; manufactured by Asahi Kasei Kogyo Co., Ltd. , N,N'-tetraethyl-4,4'-diaminobenzophenone (1.3g) and an oxime ketone surfactant propylene glycol monomethyl ether acetate 10% by mass solution (3.6g) A solution obtained by dissolving 3-methoxy-butylacetic acid 3-methyl ester (341.5 g) and propylene glycol monomethyl ether acetate (22.7 g) to obtain a total solid content concentration of 18% by mass, pigment/resin (mass ratio) = 70/30 photosensitive resin composition UL1. Further, the resin contains a nonvolatile component of the acrylic polymer (P-1), the polyfunctional monomer, the photopolymerization initiator, and the surfactant in the dispersion.
利用旋轉塗佈機將黑色樹脂組成物LL1以硬化(cure)後的膜厚成為0.7μm的方式塗佈於作為透明基板的無鹼玻璃(1737;康寧(Corning)製造;厚度0.7mm)基板上,於120℃下進行20分鐘半硬化,而獲得OD值為1.2的遮光層(A)的半硬化膜。其次,利用旋轉塗佈機以硬化後的膜厚成為0.7μm的方式塗佈感光性黑色樹脂組成物UL1,於90℃下進行10分鐘預烘烤 (prebake)。對該塗佈膜,使用遮罩對準曝光機(mask aligner)PEM-6M(聯合光學(Union Optical)股份有限公司製造),經由光罩(photomask)以200mJ/cm2的曝光量進行紫外線曝光。 The black resin composition LL1 was applied to an alkali-free glass (1737; manufactured by Corning; thickness: 0.7 mm) as a transparent substrate by a spin coater so that the film thickness after curing was 0.7 μm. The film was semi-hardened at 120 ° C for 20 minutes to obtain a semi-cured film of the light-shielding layer (A) having an OD value of 1.2. Next, the photosensitive black resin composition UL1 was applied by a spin coater so that the film thickness after hardening became 0.7 μm, and prebake was performed at 90 ° C for 10 minutes. The coating film, using a mask aligner machine (mask aligner) PEM-6M (optical joint (Union Optical) Co., Ltd.), through a mask (photomasks) to an exposure amount 200mJ / cm 2 of UV exposure .
其次,利用四甲基氫氧化銨的0.5質量%水溶液的鹼性 顯影液進行顯影,繼而利用純水進行洗淨,藉此形成可用於彩色濾光片基板的黑矩陣圖案。將所獲得的基板於熱風烘箱中於230℃下保持30分鐘而進行硬化,藉此獲得積層有OD值1.2的遮光層(A)與OD值2.8的遮光層(B)的OD值4.0的黑矩陣基板。 Secondly, the basicity of a 0.5% by mass aqueous solution of tetramethylammonium hydroxide The developer is developed, and then washed with pure water, thereby forming a black matrix pattern usable for the color filter substrate. The obtained substrate was cured in a hot air oven at 230 ° C for 30 minutes, thereby obtaining a black layer having an OD value of 4.0 of a light shielding layer (A) having an OD value of 1.2 and a light shielding layer (B) having an OD value of 2.8. Matrix substrate.
(實施例2~實施例7) (Example 2 to Example 7)
分別使用白色微粒子分散液WD2~WD7代替WD1作為所使用的白色微粒子分散液,除此以外,以與實施例1相同的方式獲得黑色樹脂組成物LL2~LL7。使用該些黑色樹脂組成物LL2~LL7,除此以外,以與實施例1相同的方式獲得積層有OD值1.2的遮光層(A)與OD值2.8的遮光層(B)的OD值4.0的黑矩陣基板。 Black resin compositions LL2 to LL7 were obtained in the same manner as in Example 1 except that the white fine particle dispersions WD2 to WD7 were used instead of WD1 as the white fine particle dispersion liquid. The OD value of the light shielding layer (A) having an OD value of 1.2 and the light shielding layer (B) having an OD value of 2.8 was obtained in the same manner as in Example 1 except that the black resin compositions LL2 to LL7 were used. Black matrix substrate.
(實施例8) (Example 8)
將遮光材料分散液Bk2(364g)與白色微粒子分散液WD3(364g)混合後,添加聚醯胺酸A-1(63g)、γ-丁內酯(82g)、N-甲基-2-吡咯啶酮(87g)、3-甲基-3-甲氧基乙酸丁酯(39g)及界面活性劑LC951(1g)(楠本化成製造),獲得總固體成分濃度10質量%、遮光材料/白色微粒子/樹脂(質量比)=35/35/30的黑色樹脂組成物LL8。使用該黑色樹脂組成物LL8,除此以外,以與實施例1 相同的方式獲得積層有OD值1.4的遮光層(A)與OD值2.8的遮光層(B)的OD值4.2的黑矩陣基板。 After mixing the light-shielding material dispersion Bk2 (364 g) with the white fine particle dispersion WD3 (364 g), poly-proline acid A-1 (63 g), γ-butyrolactone (82 g), and N-methyl-2-pyrrole were added. A ketone (87 g), 3-methyl-3-methoxyacetic acid butyl ester (39 g), and a surfactant LC951 (1 g) (manufactured by Nanben Chemical Co., Ltd.) to obtain a total solid content concentration of 10% by mass, a light-shielding material/white fine particles / Resin (mass ratio) = 35/35/30 black resin composition LL8. The black resin composition LL8 was used, and the same as Example 1 In the same manner, a black matrix substrate having an OD value of 4.2 with a light shielding layer (A) having an OD value of 1.4 and a light shielding layer (B) having an OD value of 2.8 was obtained.
(實施例9) (Example 9)
將遮光材料分散液Bk3(364g)與白色微粒子分散液WD5(364g)混合後,添加聚醯胺酸A-1(63g)、γ-丁內酯(82g)、N-甲基-2-吡咯啶酮(87g)、3-甲基-3-甲氧基乙酸丁酯(39g)及界面活性劑LC951(1g),獲得總固體成分濃度10質量%、遮光材料/白色微粒子/樹脂(質量比)=35/35/30的黑色樹脂組成物LL9。使用該黑色樹脂組成物LL9,除此以外,以與實施例1相同的方式獲得積層有OD值1.0的遮光層(A)與OD值2.8的遮光層(B)的OD值3.8的黑矩陣基板。 After mixing the light-shielding material dispersion Bk3 (364 g) with the white fine particle dispersion WD5 (364 g), poly-proline acid A-1 (63 g), γ-butyrolactone (82 g), and N-methyl-2-pyrrole were added. Iridone (87g), 3-methyl-3-methoxyacetic acid butyl ester (39g) and surfactant LC951 (1g), to obtain a total solid content concentration of 10% by mass, shading material / white fine particles / resin (mass ratio ) = 35/35/30 black resin composition LL9. A black matrix substrate having an OD value of 3.8 with a light shielding layer (A) having an OD value of 1.0 and a light shielding layer (B) having an OD value of 2.8 was obtained in the same manner as in Example 1 except that the black resin composition LL9 was used. .
(實施例10) (Embodiment 10)
利用旋轉塗佈機將樹脂組成物LL3以硬化後的膜厚成為0.7μm的方式塗佈於作為透明基板的無鹼玻璃(1737)基板上,於120℃下進行20分鐘半硬化,獲得OD值為1.2的遮光層(A)的半硬化膜。其次,利用旋轉塗佈機塗佈正型(positive)光阻劑(SRC-100;希普勵(Shipley)公司製造),於90℃下進行10分鐘預烘烤。對該塗佈膜,使用遮罩對準曝光機PEM-6M,經由正型用的光罩以200mJ/cm2的曝光量進行紫外線曝光,使用四甲基氫氧化銨的2.38質量%水溶液同時進行正型抗蝕劑(resist)的顯影及聚醯亞胺前驅物的蝕刻後,利用乙酸甲基溶纖劑將正型抗蝕劑剝離。繼而,於230℃下硬化30分鐘,而製作厚度0.7μm且 OD值1.2的遮光層(A)。 The resin composition LL3 was applied onto an alkali-free glass (1737) substrate as a transparent substrate so that the film thickness after curing was 0.7 μm by a spin coater, and semi-hardened at 120 ° C for 20 minutes to obtain an OD value. A semi-hardened film of the light-shielding layer (A) of 1.2. Next, a positive photoresist (SRC-100; manufactured by Shipley Co., Ltd.) was applied by a spin coater, and prebaked at 90 ° C for 10 minutes. The coating film, using a mask aligner machine PEM-6M, exposed to ultraviolet rays through a positive-type photomask with an exposure amount of 200mJ / cm 2 using a tetramethylammonium hydroxide aqueous solution of 2.38% by mass simultaneously After the development of the positive resist and the etching of the polyimide precursor, the positive resist was peeled off by the methyl cellosolve acetate. Then, it was hardened at 230 ° C for 30 minutes to prepare a light shielding layer (A) having a thickness of 0.7 μm and an OD value of 1.2.
於遮光材料分散液Bk2(728g)中添加聚醯胺酸A-1(63 g)、γ-丁內酯(82g)、N-甲基-2-吡咯啶酮(87g)、3-甲基-3-甲氧基乙酸丁酯(39g)及界面活性劑LC951(1g),獲得總固體成分濃度10質量%、遮光材料/樹脂(質量比)=70/30的非感光黑色樹脂組成物UL2。 Adding polyaminic acid A-1 (63) to the light-shielding material dispersion Bk2 (728g) g), γ-butyrolactone (82g), N-methyl-2-pyrrolidone (87g), 3-methyl-3-methoxyacetic acid butyl ester (39g) and surfactant LC951 (1g) A non-photosensitive black resin composition UL2 having a total solid content concentration of 10% by mass and a light-shielding material/resin (mass ratio) = 70/30 was obtained.
其次,利用旋轉塗佈機於製作有遮光層(A)的基板上 以硬化後的膜厚成為0.7μm的方式塗佈非感光性樹脂組成物UL2,於120℃下進行20分鐘半硬化。繼而,利用旋轉塗佈機塗佈正型光阻劑(SRC-100),於90℃下進行10分鐘預烘烤。針對該塗佈膜,使用遮罩對準曝光機PEM-6M,經由正型用的光罩以200mJ/cm2的曝光量進行紫外線曝光,使用四甲基氫氧化銨的2.38質量%水溶液同時進行正型抗蝕劑的顯影及聚醯亞胺前驅物的蝕刻後,利用乙酸甲基溶纖劑將正型抗蝕劑剝離。繼而於230℃下進行30分鐘硬化,獲得積層有厚度0.7μm且OD值1.2的遮光層(A)與厚度0.7μm且OD值2.8的遮光層(B)的樹脂黑矩陣基板。 Then, the non-photosensitive resin composition UL2 was applied onto the substrate on which the light-shielding layer (A) was formed by a spin coater so that the film thickness after curing was 0.7 μm, and semi-cured at 120 ° C for 20 minutes. Then, a positive photoresist (SRC-100) was applied by a spin coater, and prebaked at 90 ° C for 10 minutes. For the coating film, a mask alignment exposure machine PEM-6M was used, and ultraviolet light exposure was performed at a exposure amount of 200 mJ/cm 2 through a photomask for positive type, and simultaneous use of a 2.38 mass% aqueous solution of tetramethylammonium hydroxide was carried out simultaneously. After the development of the positive resist and the etching of the polyimide precursor, the positive resist was peeled off by the methyl cellosolve acetate. Then, it was hardened at 230 ° C for 30 minutes to obtain a resin black matrix substrate in which a light shielding layer (A) having a thickness of 0.7 μm and an OD value of 1.2 and a light shielding layer (B) having a thickness of 0.7 μm and an OD value of 2.8 were laminated.
(實施例11) (Example 11)
使用微粒子分散液WD8代替WD1作為所使用的微粒子分散液,除此以外,以與實施例1相同的方式獲得黑色樹脂組成物LL8。使用該黑色樹脂組成物LL8,除此以外,以與實施例1相同的方式獲得積層有OD值1.2的遮光層(A)與OD值2.8的遮光層(B)的OD值4.0的黑矩陣基板。 A black resin composition LL8 was obtained in the same manner as in Example 1 except that the fine particle dispersion WD8 was used instead of WD1 as the fine particle dispersion liquid to be used. A black matrix substrate having an OD value of 4.0 of a light shielding layer (A) having an OD value of 1.2 and a light shielding layer (B) having an OD value of 2.8 was obtained in the same manner as in Example 1 except that the black resin composition LL8 was used. .
(比較例1) (Comparative Example 1)
於遮光材料分散液Bk1(728g)中添加聚醯胺酸A-1(63g)、γ-丁內酯(82g)、N-甲基-2-吡咯啶酮(87g)、3-甲基-3-甲氧基乙酸丁酯(39g)及界面活性劑LC951(1g),獲得總固體成分濃度10質量%且不含折射率為1.4~1.8的白色微粒子的遮光材料/樹脂(質量比)=70/30的黑色樹脂組成物LL21。 Polyphthalic acid A-1 (63 g), γ-butyrolactone (82 g), N-methyl-2-pyrrolidone (87 g), 3-methyl- were added to the light-shielding material dispersion Bk1 (728 g). Butyl 3-methoxyacetate (39 g) and surfactant LC951 (1 g), a light-shielding material/resin (mass ratio) of white fine particles having a total solid content concentration of 10% by mass and having a refractive index of 1.4 to 1.8 = 70/30 black resin composition LL21.
利用旋轉塗佈機將黑色樹脂組成物LL21以硬化後的膜 厚成為0.7μm的方式塗佈於作為透明基板的無鹼玻璃(1737)基板上,於120℃下進行20分鐘半硬化,獲得OD值為2.5的遮光層(A)的半硬化膜。其次,利用旋轉塗佈機以硬化後的膜厚成為0.7μm的方式塗佈感光性黑色樹脂組成物UL1,於90℃下進行10分鐘預烘烤。對該塗佈膜,使用遮罩對準曝光機PEM-6M經由光罩以200mJ/cm2的曝光量進行紫外線曝光。 The black resin composition LL21 was applied onto an alkali-free glass (1737) substrate as a transparent substrate so that the film thickness after curing was 0.7 μm by a spin coater, and semi-hardened at 120 ° C for 20 minutes to obtain an OD. A semi-hardened film of the light shielding layer (A) having a value of 2.5. Next, the photosensitive black resin composition UL1 was applied by a spin coater so that the film thickness after hardening became 0.7 μm, and prebaked at 90 ° C for 10 minutes. The coating film was subjected to ultraviolet exposure using a mask alignment exposure machine PEM-6M through a photomask at an exposure amount of 200 mJ/cm 2 .
其次,利用四甲基氫氧化銨的0.5質量%水溶液的鹼性 顯影液進行顯影,繼而利用純水洗淨,藉此獲得圖案化基板。將所獲得的圖案化基板於熱風烘箱中於230℃下保持30分鐘而進行硬化,藉此獲得積層有OD值2.5的遮光層(A)與OD值2.8的遮光層(B)的OD值5.3的黑矩陣基板。 Secondly, the basicity of a 0.5% by mass aqueous solution of tetramethylammonium hydroxide The developer is developed, and then washed with pure water, thereby obtaining a patterned substrate. The obtained patterned substrate was cured in a hot air oven at 230 ° C for 30 minutes, thereby obtaining an OD value of 5.3 of a light shielding layer (A) having an OD value of 2.5 and a light shielding layer (B) having an OD value of 2.8. Black matrix substrate.
(比較例2) (Comparative Example 2)
將遮光材料分散液Bk1(364g)與白色微粒子分散液WD22(364g)混合後,添加聚醯胺酸A-1(63g)、γ-丁內酯(82g)、N-甲基-2-吡咯啶酮(87g)、3-甲基-3-甲氧基乙酸丁酯(39g)及 界面活性劑LC951(1g)而製作黑色樹脂組成物LL22,但粒子產生凝聚而黏度顯著上升,無法利用旋轉塗佈機進行塗佈。 After mixing the light-shielding material dispersion Bk1 (364 g) with the white fine particle dispersion WD22 (364 g), poly-proline acid A-1 (63 g), γ-butyrolactone (82 g), and N-methyl-2-pyrrole were added. Pyridone (87g), 3-methyl-3-methoxyacetic acid butyl ester (39g) and The surfactant resin LC951 (1 g) was used to produce the black resin composition LL22. However, the particles were agglomerated and the viscosity was remarkably increased, and the coating could not be performed by a spin coater.
(比較例3) (Comparative Example 3)
使用白色微粒子分散液WD23,除此以外,以與實施例1相同的方式獲得黑色樹脂組成物LL23。使用該黑色樹脂組成物LL23,除此以外,以與實施例1相同的方式獲得積層有OD值1.2的遮光層(A)與OD值2.8的遮光層(B)的OD值4.0的樹脂黑矩陣基板。 A black resin composition LL23 was obtained in the same manner as in Example 1 except that the white fine particle dispersion WD23 was used. A resin black matrix having an OD value of 4.0 of a light shielding layer (A) having an OD value of 1.2 and a light shielding layer (B) having an OD value of 2.8 was obtained in the same manner as in Example 1 except that the black resin composition LL23 was used. Substrate.
<評價結果> <evaluation result>
將實施例1~實施例11及比較例1~比較例3中所製作的黑色樹脂組成物的組成及所製作的BM基板的評價結果示於表1及表2。 The composition of the black resin composition produced in Examples 1 to 11 and Comparative Examples 1 to 3 and the evaluation results of the produced BM substrate are shown in Tables 1 and 2.
根據表1及表2的結果可明確,實施例1~實施例11中 所製作的BM基板均反射色度及反射率低,因此對於抑制外部光的影響而言較佳,且OD值及體積電阻值足夠高,因此為高性能的黑矩陣基板。 It can be clarified from the results of Tables 1 and 2 that in Examples 1 to 11 Since the produced BM substrate has a low reflection chromaticity and a low reflectance, it is preferable to suppress the influence of external light, and the OD value and the volume resistance value are sufficiently high, so that it is a high-performance black matrix substrate.
(彩色濾光片基板的製作) (Production of color filter substrate)
將綠顏料(PG36;44g)、黃顏料(PY138;19g)、聚醯胺酸A-2(47g)及γ-丁內酯(890g)添入至儲罐中,利用均質攪拌機(特殊機化製造)攪拌1小時,獲得G顏料預分散液G1。其後,對85%填充有0.40mmφ氧化鋯珠(東麗陶瓷珠(Toray ceram beads);東麗(Toray)股份有限公司製造)的戴諾磨機KDL(新丸企業(SHINMARU ENTERPRISES)製造)供給預分散液G1,以轉速11m/s進行3小時分散,獲得固體成分濃度7質量%、顏料/聚合物(質量比)=90/10的G顏料分散液G1。利用聚醯胺酸A-2及溶劑對G顏料分散液G1進行稀釋,獲得綠色樹脂組成物。 Green pigment (PG36; 44g), yellow pigment (PY138; 19g), polyglycine A-2 (47g) and γ-butyrolactone (890g) were added to the storage tank, using a homomixer (special machine The mixture was stirred for 1 hour to obtain a G pigment predispersion G1. Then, 85% of Dano mill KDL (manufactured by SHINMARU ENTERPRISES) filled with 0.40 mmφ zirconia beads (Toray ceram beads; manufactured by Toray Co., Ltd.) The predispersion liquid G1 was supplied and dispersed at a number of revolutions of 11 m/s for 3 hours to obtain a G pigment dispersion liquid G1 having a solid content concentration of 7 mass% and a pigment/polymer (mass ratio) of 90/10. The G pigment dispersion G1 was diluted with polyamine acid A-2 and a solvent to obtain a green resin composition.
添入紅顏料(PR254;63g)代替綠顏料及黃顏料,以 相同的方式獲得固體成分濃度7質量%、顏料/聚合物(質量比)=90/10的R顏料分散液R1。利用聚醯胺酸A-2及溶劑對R顏料分散液R1進行稀釋,獲得紅色樹脂組成物。 Add red pigment (PR254; 63g) instead of green pigment and yellow pigment to In the same manner, an R pigment dispersion liquid R1 having a solid content concentration of 7 mass% and a pigment/polymer (mass ratio) = 90/10 was obtained. The R pigment dispersion R1 was diluted with polyamic acid A-2 and a solvent to obtain a red resin composition.
添入藍顏料(PR15:6;63g)代替綠顏料及黃顏料, 以相同的方式獲得固體成分濃度7質量%、顏料/聚合物(質量比)=90/10的B顏料分散液B1。利用聚醯胺酸A-2及溶劑對B顏料分散液B1進行稀釋,獲得藍色樹脂組成物。 Add blue pigment (PR15:6; 63g) instead of green pigment and yellow pigment. A B pigment dispersion liquid B1 having a solid content concentration of 7 mass% and a pigment/polymer (mass ratio) = 90/10 was obtained in the same manner. The B pigment dispersion B1 was diluted with polyamic acid A-2 and a solvent to obtain a blue resin composition.
於實施例1~實施例11以及比較例1及3中所製作的各 個黑矩陣基板上以乾燥後膜厚成為2.0μm的方式塗佈紅色糊劑(paste)並進行預烘烤,形成聚醯亞胺前驅物紅色著色膜。使用正型光阻劑,藉由與上述相同的方法,形成紅色畫素,加熱至290℃ 而進行熱硬化。以相同的方式塗佈綠色糊劑而形成綠畫素,加熱至290℃而進行熱硬化。以相同的方式塗佈藍色糊劑而形成藍畫素,加熱至290℃而進行熱硬化。 Each of the examples 1 to 11 and the comparative examples 1 and 3 On the black matrix substrate, a red paste was applied so as to have a film thickness after drying of 2.0 μm, and prebaked to form a polyimine precursor red colored film. Using a positive photoresist, red pixels are formed by the same method as above, and heated to 290 ° C And it is thermally hardened. The green paste was applied in the same manner to form green pixels, and the mixture was heated to 290 ° C to be thermally hardened. The blue paste was applied in the same manner to form blue crystals, and heated to 290 ° C to be thermally hardened.
(液晶顯示裝置的製作) (Production of liquid crystal display device)
利用中性洗劑將所獲得的各個彩色濾光片基板洗淨後,藉由印刷法塗佈包含聚醯亞胺樹脂的配向膜,使用加熱板於250℃下加熱10分鐘。加熱後的聚醯亞胺樹脂配向膜的膜厚為0.07μm。其後,對各個彩色濾光片基板進行摩擦(rubbing)處理,藉由分注法(dispense method)塗佈密封劑,使用加熱板於90℃下加熱10分鐘。另一方面,對於玻璃基板上形成有TFT陣列(array)的基板,亦同樣地利用中性洗劑洗淨後,塗佈配向膜,並進行加熱。 其後,使直徑5.5μm的球狀分隔件散布,使塗佈有密封劑的各個彩色濾光片基板與TFT基板重合,一面於烘箱中進行加壓一面於160℃下加熱90分鐘,使密封劑硬化而獲得單元胞(cell)。將各個單元胞於120℃的溫度、13.3Pa的壓力下放置4小時,繼而於氮氣中放置0.5小時後,再次於真空下填充液晶化合物。液晶化合物的填充是藉由如下方式而進行:將單元胞放入腔室(chamber)內,於室溫下減壓至13.3Pa的壓力後,將液晶注入口浸漬於液晶,使用氮氣恢復至常壓。液晶填充後,藉由紫外線硬化樹脂將液晶注入口封口。其次,將偏光板貼附於單元胞的兩片玻璃基板的外側,從而完成單元胞。進而,使所獲得的單元胞模組(module)化,從而完成液晶顯示裝置。 Each of the obtained color filter substrates was washed with a neutral detergent, and then an alignment film containing a polyimide resin was applied by a printing method, and heated at 250 ° C for 10 minutes using a hot plate. The film thickness of the heated polyimide film of the polyimide film was 0.07 μm. Thereafter, each color filter substrate was subjected to rubbing treatment, and the sealant was applied by a dispensing method, and heated at 90 ° C for 10 minutes using a hot plate. On the other hand, the substrate on which the TFT array was formed on the glass substrate was similarly washed with a neutral detergent, and then the alignment film was applied and heated. Thereafter, a spherical separator having a diameter of 5.5 μm was spread, and each of the color filter substrates coated with the sealant was placed on the TFT substrate, and heated in an oven at 160 ° C for 90 minutes to seal. The agent hardens to obtain a unit cell. Each unit cell was allowed to stand at a temperature of 120 ° C under a pressure of 13.3 Pa for 4 hours, and then placed in nitrogen for 0.5 hour, and then the liquid crystal compound was again filled under vacuum. The filling of the liquid crystal compound is carried out by placing the unit cell in a chamber, and reducing the pressure to a pressure of 13.3 Pa at room temperature, then immersing the liquid crystal injection port in the liquid crystal, and recovering it with nitrogen gas. Pressure. After the liquid crystal is filled, the liquid crystal injection port is sealed by an ultraviolet curing resin. Next, the polarizing plate is attached to the outside of the two glass substrates of the unit cells, thereby completing the unit cells. Further, the obtained unit cell module is made to complete the liquid crystal display device.
觀察所獲得的液晶顯示裝置,結果具備實施例1~實施 例9及實施例11中所獲得的黑矩陣基板的液晶顯示裝置中,反射色度及反射率均低,因此即便於照射外部光的情況下顯示特性亦良好。關於具備實施例10中所獲得的黑矩陣基板的液晶顯示裝置,大體良好,但由於黑矩陣的圖案產生偏移,故而感到略微昏暗。另一方面,具備比較例1及比較例3中所獲得的黑矩陣基板的液晶顯示裝置中,反射色度及反射率均高,因此在照射外部光的情況下,觀察起來黑顯示泛起,顯示品質差。 Observing the obtained liquid crystal display device, the results were as follows: Example 1 to implementation In the liquid crystal display device of the black matrix substrate obtained in Example 9 and Example 11, since both the reflection chromaticity and the reflectance were low, the display characteristics were good even when external light was irradiated. The liquid crystal display device including the black matrix substrate obtained in Example 10 was generally excellent, but the pattern of the black matrix was shifted, so that it was slightly dim. On the other hand, in the liquid crystal display device including the black matrix substrate obtained in Comparative Example 1 and Comparative Example 3, since both the reflection chromaticity and the reflectance are high, when the external light is irradiated, the black display is observed. The display quality is poor.
[產業上之可利用性] [Industrial availability]
本發明的黑矩陣基板可利用於使用冷陰極管或LED等光源的顯示裝置或液晶顯示裝置用彩色濾光片基板、或者液晶顯示裝置。 The black matrix substrate of the present invention can be used for a display device using a light source such as a cold cathode tube or an LED, a color filter substrate for a liquid crystal display device, or a liquid crystal display device.
10‧‧‧透明基板 10‧‧‧Transparent substrate
11‧‧‧樹脂BM(樹脂黑矩陣) 11‧‧‧Resin BM (Resin Black Matrix)
21‧‧‧遮光層(A) 21‧‧‧Lighting layer (A)
22‧‧‧遮光層(B) 22‧‧‧Lighting layer (B)
Claims (10)
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| JP2013-045045 | 2013-03-07 | ||
| JP2013045045 | 2013-03-07 |
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| TW201441676A true TW201441676A (en) | 2014-11-01 |
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| TW103107562A TWI617844B (en) | 2013-03-07 | 2014-03-06 | Black matrix substrate, manufacturing method thereof, color filter substrate, light emitting device, liquid crystal display device, and method of manufacturing color filter |
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| JP (1) | JP6417941B2 (en) |
| KR (1) | KR102112520B1 (en) |
| CN (1) | CN105026963B (en) |
| TW (1) | TWI617844B (en) |
| WO (1) | WO2014136738A1 (en) |
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- 2014-03-04 JP JP2014514644A patent/JP6417941B2/en not_active Expired - Fee Related
- 2014-03-04 KR KR1020157022147A patent/KR102112520B1/en not_active Expired - Fee Related
- 2014-03-04 WO PCT/JP2014/055362 patent/WO2014136738A1/en not_active Ceased
- 2014-03-04 CN CN201480010592.3A patent/CN105026963B/en not_active Expired - Fee Related
- 2014-03-06 TW TW103107562A patent/TWI617844B/en not_active IP Right Cessation
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104698521A (en) * | 2015-03-03 | 2015-06-10 | 昆山龙腾光电有限公司 | Color filter sheet, manufacturing method for color filter sheet and liquid crystal display device |
| TWI708995B (en) * | 2015-10-08 | 2020-11-01 | 日商日鐵化學材料股份有限公司 | Photosensitive resin composition for light-shielding film functioning as spacer, light-shielding film, lcd device, method for manufacturing photosensitive resin composition for light-shielding film functioning as spacer, method for manufacturing light-shielding film and method for manufacturing lcd device |
| TWI862593B (en) * | 2019-05-24 | 2024-11-21 | 南韓商羅門哈斯電子材料韓國公司 | Structure for a quantum dot barrier rib and process for preparing the same |
| TWI732580B (en) * | 2020-06-03 | 2021-07-01 | 新應材股份有限公司 | Photosensitive resin composition, spacer, light conversion layer, and light emitting device |
| US11914292B2 (en) | 2020-06-03 | 2024-02-27 | Echem Solutions Corp. | Photosensitive resin composition, spacer, light conversion layer, and light-emitting device |
| TWI792112B (en) * | 2020-12-04 | 2023-02-11 | 晨豐光電股份有限公司 | Glass with low color difference and low scattering |
| TWI847406B (en) * | 2021-12-31 | 2024-07-01 | 南韓商Lg顯示器股份有限公司 | Display device |
| US12075684B2 (en) | 2021-12-31 | 2024-08-27 | Lg Display Co., Ltd. | Display device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105026963B (en) | 2018-01-23 |
| KR102112520B1 (en) | 2020-05-19 |
| WO2014136738A1 (en) | 2014-09-12 |
| KR20150123802A (en) | 2015-11-04 |
| TWI617844B (en) | 2018-03-11 |
| CN105026963A (en) | 2015-11-04 |
| JPWO2014136738A1 (en) | 2017-02-09 |
| JP6417941B2 (en) | 2018-11-07 |
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| MM4A | Annulment or lapse of patent due to non-payment of fees |