[go: up one dir, main page]

TWI852824B - Pixel circuit - Google Patents

Pixel circuit Download PDF

Info

Publication number
TWI852824B
TWI852824B TW112142432A TW112142432A TWI852824B TW I852824 B TWI852824 B TW I852824B TW 112142432 A TW112142432 A TW 112142432A TW 112142432 A TW112142432 A TW 112142432A TW I852824 B TWI852824 B TW I852824B
Authority
TW
Taiwan
Prior art keywords
transistor
voltage
coupled
control
receiving
Prior art date
Application number
TW112142432A
Other languages
Chinese (zh)
Other versions
TW202520233A (en
Inventor
林志隆
柯呈翰
陳松駿
鄧名揚
莊銘宏
Original Assignee
友達光電股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 友達光電股份有限公司 filed Critical 友達光電股份有限公司
Priority to TW112142432A priority Critical patent/TWI852824B/en
Application granted granted Critical
Publication of TWI852824B publication Critical patent/TWI852824B/en
Publication of TW202520233A publication Critical patent/TW202520233A/en

Links

Images

Landscapes

  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)
  • Control Of El Displays (AREA)

Abstract

A pixel circuit is provided. The pixel circuit includes a light emitting diode, first to fifth transistors, first to third capacitors, a first compensation writing circuit, a second compensation writing circuit and a voltage adjustment circuit. The first transistor and the second transistor are coupled in series between a cathode of the light-emitting diode and a system low voltage. The third transistor, the fourth transistor and the fifth transistor are coupled in series between the first compensation writing circuit and a first reference voltage. The first capacitor is coupled between the second transistor and the first reference voltage. The second capacitor and the third capacitor are coupled in series between the third transistor and a swing signal. The second compensation writing circuit is coupled to the first transistor. The voltage adjustment circuit is coupled to a connection point between the second capacitor and the third capacitor.

Description

畫素電路Pixel circuit

本發明是有關於一種畫素電路,且特別是有關於一種發光二極體畫素電路。The present invention relates to a pixel circuit, and in particular to a light emitting diode pixel circuit.

因環保意識抬頭,節能省電、使用壽命、色彩飽和度及電源品質等訴求逐漸成為消費者考慮購買的因素,同時受到半導體技術迅速發展與成本降低,驅使發光元件成為未來照明與顯示器市場的發展主流。其中,有機發光二極體(OLED)與微型發光二極體(uLED)為當下使用於自發光顯示面板的主要元件。As environmental awareness rises, energy saving, lifespan, color saturation, and power quality are gradually becoming factors that consumers consider when purchasing. At the same time, the rapid development of semiconductor technology and the reduction of costs have driven light-emitting components to become the mainstream of future lighting and display markets. Among them, organic light-emitting diodes (OLEDs) and micro-light-emitting diodes (uLEDs) are the main components currently used in self-luminous display panels.

然而,微型發光二極體(uLED)和有機發光二極體(OLED)的發光亮度曲線不一樣,亦即操作同樣亮度下,發光二極體的發光效率非常低。並且,由於有機發光二極體的驅動電路所操作的電流區間是落在微型發光二極體的低發光效率區間,因此較早發展的有機發光二極體的驅動電路無法直接應用在微型發光二極體。藉此,為了驅動微型發光二極體,需要對現有的驅動電路作相對應的改動或重新設計。However, the luminance curves of micro-LEDs (uLEDs) and organic LEDs (OLEDs) are different, that is, when operating at the same brightness, the luminous efficiency of the LEDs is very low. In addition, since the current range operated by the driving circuit of the organic LED falls within the low luminous efficiency range of the micro-LED, the driving circuit of the organic LED developed earlier cannot be directly applied to the micro-LED. Therefore, in order to drive the micro-LED, the existing driving circuit needs to be modified or redesigned accordingly.

本發明提供一種畫素電路,可降低電源供應之跨壓,以及減少開啟發光二極體的所需時間。The present invention provides a pixel circuit which can reduce the cross-voltage of power supply and shorten the time required to turn on a light-emitting diode.

本發明的畫素電路,包括發光二極體、第一電晶體、第二電晶體、第三電晶體、第四電晶體、第五電晶體、第一電容、第二電容、第三電容、第一補償寫入電路、第二補償寫入電路以及電壓調整電路。發光二極體具有接收系統高電壓的陽極及陰極。第一電晶體具有耦接發光二極體的陰極的第一端、控制端、以及第二端。第二電晶體具有耦接第一電晶體的第二端的第一端、控制端、以及接收系統低電壓的第二端。第三電晶體具有第一端、控制端、以及第二端。第四電晶體具有耦接第三電晶體的第二的第一端、接收發光信號的控制端、以及耦接第二電晶體的控制端的第二端。第五電晶體具有耦接第二電晶體的控制端的第一端、接收多重發光信號的控制端、以及接收第一參考電壓的第二端。第一電容耦接於第二電晶體的控制端與第一參考電壓之間。第二電容耦接第三電晶體的控制端。第三電容耦接於第二電容與擺盪信號之間。第一補償寫入電路接收脈波寬度資料電壓,且耦接第三電晶體的第一端、控制端及第二端,以對第三電晶體的臨界電壓進行補償,且基於脈波寬度資料電壓進行資料寫入。第二補償寫入電路接收脈波振幅資料電壓,且耦接第一電晶體的第一端、控制端及第二端,以對第一電晶體的臨界電壓進行補償,且基於脈波振幅資料電壓進行資料寫入。電壓調整電路耦接第二電容與第三電容之間的連接點,且耦接第四電晶體的第二端,以反應於發光二極體的發光調整連接點的電壓準位。The pixel circuit of the present invention includes a light-emitting diode, a first transistor, a second transistor, a third transistor, a fourth transistor, a fifth transistor, a first capacitor, a second capacitor, a third capacitor, a first compensation write circuit, a second compensation write circuit and a voltage adjustment circuit. The light-emitting diode has an anode and a cathode for receiving a high voltage of a system. The first transistor has a first end coupled to the cathode of the light-emitting diode, a control end, and a second end. The second transistor has a first end coupled to the second end of the first transistor, a control end, and a second end for receiving a low voltage of a system. The third transistor has a first end, a control end, and a second end. The fourth transistor has a first end coupled to the second end of the third transistor, a control end for receiving a light-emitting signal, and a second end coupled to the control end of the second transistor. The fifth transistor has a first end coupled to the control end of the second transistor, a control end receiving a multiple light-emitting signal, and a second end receiving a first reference voltage. The first capacitor is coupled between the control end of the second transistor and the first reference voltage. The second capacitor is coupled to the control end of the third transistor. The third capacitor is coupled between the second capacitor and the swing signal. The first compensation write circuit receives the pulse width data voltage and is coupled to the first end, the control end, and the second end of the third transistor to compensate for the critical voltage of the third transistor and write data based on the pulse width data voltage. The second compensation writing circuit receives the pulse amplitude data voltage and is coupled to the first end, the control end and the second end of the first transistor to compensate for the critical voltage of the first transistor and write data based on the pulse amplitude data voltage. The voltage adjustment circuit is coupled to the connection point between the second capacitor and the third capacitor and is coupled to the second end of the fourth transistor to respond to the voltage level of the light-emitting diode's light-emitting adjustment connection point.

基於上述,本發明實施例的畫素電路,電流路徑上僅兩顆電晶體,可降低電源供應之跨壓;並且於發光二極體的發光階段時透過電壓耦合調整第三電晶體的閘極電壓來調整加大第三電晶體之開啟程度,減少開啟發光二極體的所需時間。因此,可以有效補償驅動電晶體(亦即第一電晶體)與控制電晶體(亦即第三電晶體)的臨界電壓以及補償系統高電壓的電流電阻壓降,並大幅減少第二電晶體的閘極電壓的上升時間佔整體發光時間之比例,提升灰階控制能力。Based on the above, the pixel circuit of the embodiment of the present invention has only two transistors on the current path, which can reduce the cross-voltage of the power supply; and in the light-emitting stage of the light-emitting diode, the gate voltage of the third transistor is adjusted through voltage coupling to adjust and increase the opening degree of the third transistor, thereby reducing the time required to turn on the light-emitting diode. Therefore, the critical voltage of the driving transistor (i.e., the first transistor) and the control transistor (i.e., the third transistor) can be effectively compensated, as well as the current resistance voltage drop of the high voltage of the system, and the proportion of the rising time of the gate voltage of the second transistor to the overall light-emitting time can be greatly reduced, thereby improving the grayscale control capability.

為讓本發明的上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。In order to make the above features and advantages of the present invention more clearly understood, embodiments are given below and described in detail with reference to the accompanying drawings.

除非另有定義,本文使用的所有術語(包括技術和科學術語)具有與本發明所屬領域的普通技術人員通常理解的相同的含義。將進一步理解的是,諸如在通常使用的字典中定義的那些術語應當被解釋為具有與它們在相關技術和本發明的上下文中的含義一致的含義,並且將不被解釋為理想化的或過度正式的意義,除非本文中明確地這樣定義。Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by ordinary technicians in the field to which the present invention belongs. It will be further understood that those terms as defined in commonly used dictionaries should be interpreted as having a meaning consistent with their meaning in the context of the relevant technology and the present invention, and will not be interpreted as an idealized or overly formal meaning unless expressly defined as such in this document.

應當理解,儘管術語“第一”、“第二”、“第三”等在本文中可以用於描述各種元件、部件、區域、層及/或部分,但是這些元件、部件、區域、及/或部分不應受這些術語的限制。這些術語僅用於將一個元件、部件、區域、層或部分與另一個元件、部件、區域、層或部分區分開。因此,下面討論的“第一元件”、“部件”、“區域”、“層”或“部分”可以被稱為第二元件、部件、區域、層或部分而不脫離本文的教導。It should be understood that although the terms "first", "second", "third", etc. may be used herein to describe various elements, components, regions, layers and/or parts, these elements, components, regions, and/or parts should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or part from another element, component, region, layer or part. Therefore, the "first element", "component", "region", "layer" or "part" discussed below can be referred to as a second element, component, region, layer or part without departing from the teachings of this article.

這裡使用的術語僅僅是為了描述特定實施例的目的,而不是限制性的。如本文所使用的,除非內容清楚地指示,否則單數形式“一”、“一個”和“該”旨在包括複數形式,包括“至少一個”。“或”表示“及/或”。如本文所使用的,術語“及/或”包括一個或多個相關所列項目的任何和所有組合。還應當理解,當在本說明書中使用時,術語“包括”及/或“包括”指定所述特徵、區域、整體、步驟、操作、元件的存在及/或部件,但不排除一個或多個其它特徵、區域整體、步驟、操作、元件、部件及/或其組合的存在或添加。The terms used herein are for the purpose of describing specific embodiments only and are not restrictive. As used herein, unless the context clearly indicates otherwise, the singular forms "a", "an" and "the" are intended to include plural forms, including "at least one". "Or" means "and/or". As used herein, the term "and/or" includes any and all combinations of one or more of the relevant listed items. It should also be understood that when used in this specification, the terms "include" and/or "include" specify the presence and/or parts of the features, regions, entireties, steps, operations, elements, components and/or parts, but do not exclude the presence or addition of one or more other features, regions, entireties, steps, operations, elements, components and/or combinations thereof.

圖1為依據本發明一實施例的畫素電路的電路示意圖。請參照圖1,在本實施例中,畫素電路100包括發光二極體LED1、電晶體T1~T5(對應第一電晶體~第五電晶體)、電容C1~C3(對應第一電容~第三電容)、第一補償寫入電路PCT1、第二補償寫入電路PCT2以及電壓調整電路PLCT,其中發光二極體LED1例如包括一微型發光二極體,電晶體T1及T3~T5個別以P型電晶體為例,並且電晶體T2以N型電晶體為例。FIG1 is a circuit diagram of a pixel circuit according to an embodiment of the present invention. Referring to FIG1 , in this embodiment, the pixel circuit 100 includes a light-emitting diode LED1, transistors T1 to T5 (corresponding to the first transistor to the fifth transistor), capacitors C1 to C3 (corresponding to the first capacitor to the third capacitor), a first compensation writing circuit PCT1, a second compensation writing circuit PCT2, and a voltage adjustment circuit PLCT, wherein the light-emitting diode LED1 includes, for example, a micro light-emitting diode, transistors T1 and T3 to T5 are respectively P-type transistors, and transistor T2 is an N-type transistor.

發光二極體LED1具有接收系統高電壓V DD的陽極及陰極。電晶體T1具有耦接發光二極體LED1的陰極的第一端、控制端、以及第二端。電晶體T2具有耦接電晶體T1的第二端的第一端、控制端、以及耦接系統低電壓V SS的第二端。其中,驅動電流I DR僅經由電晶體T1及電晶體T2提供至發光二極體LED1,亦即在系統高電壓V DD與系統低電壓V SS之間,驅動電流I DR僅流經發光二極體LED1、電晶體T1及T2。 The light-emitting diode LED1 has an anode and a cathode receiving a system high voltage V DD . The transistor T1 has a first end coupled to the cathode of the light-emitting diode LED1, a control end, and a second end. The transistor T2 has a first end coupled to the second end of the transistor T1, a control end, and a second end coupled to the system low voltage V SS . The driving current I DR is provided to the light-emitting diode LED1 only through the transistor T1 and the transistor T2, that is, between the system high voltage V DD and the system low voltage V SS , the driving current I DR only flows through the light-emitting diode LED1, the transistors T1 and T2.

電晶體T3具有第一端、控制端、以及第二端。電晶體T4具有耦接電晶體T3的第二端的第一端、接收發光信號EM[n]的控制端、以及耦接電晶體T2的控制端的第二端,其中n為大於等於1的正整數。電晶體T5具有耦接電晶體T2的控制端的第一端、接收多重發光信號mEM[n]的控制端、以及接收第一參考電壓V REF1的第二端。 The transistor T3 has a first terminal, a control terminal, and a second terminal. The transistor T4 has a first terminal coupled to the second terminal of the transistor T3, a control terminal receiving the luminous signal EM[n], and a second terminal coupled to the control terminal of the transistor T2, wherein n is a positive integer greater than or equal to 1. The transistor T5 has a first terminal coupled to the control terminal of the transistor T2, a control terminal receiving the multiple luminous signals mEM[n], and a second terminal receiving the first reference voltage V REF1 .

電容C1耦接於電晶體T2的控制端與第一參考電壓V REF1之間。電容C2耦接電晶體T3的控制端。電容C3耦接於第二電容C2與擺盪信號V SWEEP[n]之間,並且電容C2及C3是串接於電晶體T3的控制端與擺盪信號V SWEEP[n]之間。 Capacitor C1 is coupled between the control terminal of transistor T2 and the first reference voltage V REF1 . Capacitor C2 is coupled to the control terminal of transistor T3. Capacitor C3 is coupled between the second capacitor C2 and the swing signal V SWEEP [n], and capacitors C2 and C3 are connected in series between the control terminal of transistor T3 and the swing signal V SWEEP [n].

第一補償寫入電路PCT1接收脈波寬度資料電壓V DATA_PWM,且耦接電晶體T3的第一端、控制端及第二端,以對電晶體T3的臨界電壓進行補償,且基於脈波寬度資料電壓V DATA_PWM進行資料寫入。第二補償寫入電路PCT2接收脈波振幅資料電壓V DATA_PAM,且耦接電晶體T1的第一端、控制端及第二端,以對電晶體T1的臨界電壓進行補償,且基於脈波振幅資料電壓V DATA_PAM進行資料寫入。電壓調整電路PLCT耦接電容C2與C3之間的連接點(亦即節點G),且耦接電晶體T4的第二端,以反應於發光二極體LED1的發光調整節點G的電壓準位。 The first compensation write circuit PCT1 receives the pulse width data voltage V DATA_PWM and is coupled to the first end, the control end and the second end of the transistor T3 to compensate for the critical voltage of the transistor T3 and write data based on the pulse width data voltage V DATA_PWM . The second compensation write circuit PCT2 receives the pulse amplitude data voltage V DATA_PAM and is coupled to the first end, the control end and the second end of the transistor T1 to compensate for the critical voltage of the transistor T1 and write data based on the pulse amplitude data voltage V DATA_PAM . The voltage adjustment circuit PLCT is coupled to the connection point between the capacitors C2 and C3 (ie, the node G), and is coupled to the second end of the transistor T4 to respond to the voltage level of the light-emitting adjustment node G of the light-emitting diode LED1.

依據上述,在畫素電路100中,電流路徑上僅兩顆電晶體T1及T2,可降低電源供應之跨壓;並且於發光二極體LED1的發光階段時可透過節點G的電壓準位的調整加大電晶體T3之開啟程度,減少開啟發光二極體LED1的所需時間,亦即電晶體T2的閘極電壓上升至臨界電壓的所需時間。因此,可以有效補償驅動電晶體與控制電晶體(亦即電晶體T1及T3)的臨界電壓以及補償系統高電壓V DD的電流電阻壓降(IR drop),並大幅減少電晶體T2的閘極電壓的上升時間佔整體發光時間之比例,提升灰階控制能力。 According to the above, in the pixel circuit 100, there are only two transistors T1 and T2 on the current path, which can reduce the cross-voltage of the power supply; and in the light-emitting stage of the light-emitting diode LED1, the turn-on degree of the transistor T3 can be increased by adjusting the voltage level of the node G, thereby reducing the time required to turn on the light-emitting diode LED1, that is, the time required for the gate voltage of the transistor T2 to rise to the critical voltage. Therefore, the critical voltage of the driving transistor and the control transistor (i.e., transistors T1 and T3) and the current-resistance drop (IR drop) of the system high voltage V DD can be effectively compensated, and the proportion of the gate voltage rise time of transistor T2 to the overall luminescence time can be greatly reduced, thereby improving the grayscale control capability.

在本實施例中,第一補償寫入電路PCT1包括電晶體T6~T9(對應第六電晶體~第九電晶體),其中電晶體T6~T9個別以P型電晶體為例。電晶體T6具有接收第二參考電壓V REF2的第一端、接收發光信號EM[n]的控制端、以及耦接電晶體T3的第一端的第二端。電晶體T7具有耦接電晶體T3的第一端的第一端、接收控制信號S1[n](對應第一控制信號)的控制端、以及接收脈波寬度資料電壓V DATA_PWM的第二端。 In this embodiment, the first compensation write circuit PCT1 includes transistors T6 to T9 (corresponding to the sixth transistor to the ninth transistor), wherein the transistors T6 to T9 are respectively P-type transistors. The transistor T6 has a first end for receiving the second reference voltage V REF2 , a control end for receiving the luminous signal EM[n], and a second end coupled to the first end of the transistor T3. The transistor T7 has a first end coupled to the first end of the transistor T3, a control end for receiving the control signal S1[n] (corresponding to the first control signal), and a second end for receiving the pulse width data voltage V DATA_PWM .

電晶體T8具有接收第一參考電壓V REF1的第一端、接收控制信號S1[n-1](對應第二控制信號)的控制端、以及耦接電晶體T3的控制端的一第二端,其中控制信號S1[n-1]可以為提供至的上一級或上一列畫素電路(如100)的控制信號S1[n],亦即控制信號S1[n-1]的相位是領先第一控制信號S1[n]的。電晶體T9具有耦接電晶體T3的控制端的第一端、接收控制信號S1[n]的控制端、以及耦接電晶體T3的第二端的第二端。 Transistor T8 has a first end receiving a first reference voltage V REF1 , a control end receiving a control signal S1[n-1] (corresponding to a second control signal), and a second end coupled to the control end of transistor T3, wherein the control signal S1[n-1] may be a control signal S1[n] provided to an upper level or upper row pixel circuit (such as 100), that is, the phase of the control signal S1[n-1] is ahead of the first control signal S1[n]. Transistor T9 has a first end coupled to the control end of transistor T3, a control end receiving the control signal S1[n], and a second end coupled to the second end of transistor T3.

在本實施例中,第二補償寫入電路PCT2包括電晶體T10~T14(對應第十電晶體~第十四電晶體)及電容C4(對應第四電容),其中電晶體T10、T11、T13及T14個別以P型電晶體為例,並且電晶體T12以N型電晶體為例。電晶體T10具有接收第三參考電壓V REF3的第一端、接收多重發光信號mEM[n]的控制端、以及耦接電晶體T1的第一端的第二端。電晶體T11具有耦接電晶體T1的第一端的第一端、接收發光信號EM[n]的控制端、以及第二端。電晶體T12具有耦接電晶體T11的第二端的第一端、接收發光信號EM[n]的控制端、以及接收脈波寬度資料電壓V DATA_PWM的第二端。 In this embodiment, the second compensation write circuit PCT2 includes transistors T10-T14 (corresponding to the tenth transistor to the fourteenth transistor) and a capacitor C4 (corresponding to the fourth capacitor), wherein the transistors T10, T11, T13 and T14 are respectively exemplified by P-type transistors, and the transistor T12 is exemplified by an N-type transistor. The transistor T10 has a first end receiving the third reference voltage V REF3 , a control end receiving the multiple luminous signals mEM[n], and a second end coupled to the first end of the transistor T1. The transistor T11 has a first end coupled to the first end of the transistor T1, a control end receiving the luminous signal EM[n], and a second end. The transistor T12 has a first end coupled to the second end of the transistor T11, a control end receiving the luminous signal EM[n], and a second end receiving the pulse width data voltage V DATA_PWM .

電容C4耦接於電晶體T11的第二端與電晶體T1的控制端之間。電晶體T13具有耦接電晶體T1的第二端的第一端、接收控制信號S1[n]的控制端、以及耦接電晶體T3的控制端的第二端。電晶體T14具有耦接電晶體T3的控制端的第一端、接收控制信號S1[n-1]的控制端、以及接收第一參考電壓V REF1的第二端。 Capacitor C4 is coupled between the second terminal of transistor T11 and the control terminal of transistor T1. Transistor T13 has a first terminal coupled to the second terminal of transistor T1, a control terminal receiving control signal S1[n], and a second terminal coupled to the control terminal of transistor T3. Transistor T14 has a first terminal coupled to the control terminal of transistor T3, a control terminal receiving control signal S1[n-1], and a second terminal receiving first reference voltage V REF1 .

在本實施例中,其中電壓調整電路PLCT包括電晶體T15及T16(對應第十五電晶體及第十六電晶體),其中電晶體T5以P型電晶體為例,並且電晶體T16以N型電晶體為例。電晶體T15具有接收第三參考電壓V REF3的第一端、接收多重發光信號mEM[n]的控制端、以及耦接節點G的第二端。電晶體T16具有耦接節點G的第一端、耦接電晶體T4的第二端的控制端、以及接收第一參考電壓V REF1的第二端。 In this embodiment, the voltage adjustment circuit PLCT includes transistors T15 and T16 (corresponding to the fifteenth transistor and the sixteenth transistor), wherein the transistor T5 is a P-type transistor, and the transistor T16 is an N-type transistor. The transistor T15 has a first end receiving the third reference voltage V REF3 , a control end receiving the multiple light-emitting signal mEM[n], and a second end coupled to the node G. The transistor T16 has a first end coupled to the node G, a control end coupled to the second end of the transistor T4, and a second end receiving the first reference voltage V REF1 .

圖2為依據本發明一實施例的畫素電路的驅動波形示意圖。在參照圖1及圖2,在本實施例中,畫素電路100在單個畫面期間中的操作大致分為5個階段:重置期間(1)、補償期間(2)、穩定期間(3)、發光期間(4)、以及關閉期間(5),其中重置期間(1)、補償期間(2)、穩定期間(3)及發光期間(4)會位於兩個關閉期間(5)中,並且穩定期間(3)及發光期間(4)會重複出現以實現重複發光的功能。FIG2 is a schematic diagram of a driving waveform of a pixel circuit according to an embodiment of the present invention. Referring to FIG1 and FIG2, in the present embodiment, the operation of the pixel circuit 100 in a single frame period is roughly divided into five stages: a reset period (1), a compensation period (2), a stabilization period (3), a light-emitting period (4), and a shutdown period (5), wherein the reset period (1), the compensation period (2), the stabilization period (3), and the light-emitting period (4) are located in two shutdown periods (5), and the stabilization period (3) and the light-emitting period (4) are repeated to achieve a repeated light-emitting function.

在本實施例中,控制信號S1[n-1]及S1[n]、發光信號EM[n]以及多重發光信號mEM[n]的電壓準位會在閘極高電壓V GH與閘極低電壓V GL之間切換,而擺盪信號V SWEEP[n]的電壓準位會在擺盪高電壓V SH與擺盪低電壓V SL之間擺盪。 In this embodiment, the voltage levels of the control signals S1[n-1] and S1[n], the luminous signal EM[n], and the multiple luminous signal mEM[n] are switched between a gate high voltage V GH and a gate low voltage V GL , and the voltage level of the swing signal V SWEEP [n] swings between a swing high voltage V SH and a swing low voltage V SL .

在重置期間(1)中,控制信號S1[n-1]及多重發光信號mEM[n]為閘極低電壓V GL,並且控制信號S1[n]及發光信號EM[n]為閘極高電壓V GH。此時,電晶體T5、T8、T10、T12、T14以及T15呈現導通,並且電晶體T4、T6、T7、T9、T11、T13以及T16呈現截止(亦即不導通)。因此,節點A的電壓準位為第一參考電壓V REF1,節點B的電壓準位為第三參考電壓V REF3,節點C的電壓準位為脈波振幅資料電壓V DATA_PAM,節點D的電壓準位為第一參考電壓V REF1,節點E的電壓準位為第二參考電壓V REF2,節點F的電壓準位為第一參考電壓V REF1,並且節點G的電壓準位為第三參考電壓V REF3。並且,電晶體T1因節點A的電壓準位而導通,電晶體T2及T16因節點F的電壓準位而截止,並且電晶體T3因節點D的電壓準位而導通。藉此,可重置畫素電路100的操作狀態。 During the reset period (1), the control signal S1[n-1] and the multiple luminescence signal mEM[n] are at a gate low voltage V GL , and the control signal S1[n] and the luminescence signal EM[n] are at a gate high voltage V GH . At this time, transistors T5, T8, T10, T12, T14 and T15 are turned on, and transistors T4, T6, T7, T9, T11, T13 and T16 are turned off (i.e., not turned on). Therefore, the voltage level of node A is the first reference voltage V REF1 , the voltage level of node B is the third reference voltage V REF3 , the voltage level of node C is the pulse amplitude data voltage V DATA — PAM , the voltage level of node D is the first reference voltage V REF1 , the voltage level of node E is the second reference voltage V REF2 , the voltage level of node F is the first reference voltage V REF1 , and the voltage level of node G is the third reference voltage V REF3 . Furthermore, the transistor T1 is turned on due to the voltage level of the node A, the transistors T2 and T16 are turned off due to the voltage level of the node F, and the transistor T3 is turned on due to the voltage level of the node D. Thus, the operation state of the pixel circuit 100 can be reset.

在補償期間(2)中,控制信號S1[n]及多重發光信號mEM[n]為閘極低電壓V GL,並且控制信號S1[n-1]及發光信號EM[n]為閘極高電壓V GH。此時,電晶體T5、T7、T9、T10、T12、T13以及T15呈現導通,並且電晶體T4、T6、T8、T11、T14以及T16呈現截止(亦即不導通)。因此,節點A的電壓準位為第三參考電壓V REF3減去電晶體T1的臨界電壓,節點B的電壓準位為第三參考電壓V REF3,節點C的電壓準位為脈波振幅資料電壓V DATA_PAM,節點D的電壓準位為脈波寬度資料電壓V DATA_PWM減去電晶體T3的臨界電壓,節點E的電壓準位為脈波寬度資料電壓V DATA_PWM,節點F的電壓準位為第一參考電壓V REF1,並且節點G的電壓準位為第三參考電壓V REF3。並且,電晶體T1因節點A的電壓準位而導通,電晶體T2及T16因節點F的電壓準位而截止,並且電晶體T3因節點D的電壓準位而導通。藉此,可對畫素電路100的電晶體T1及T3的臨界電壓進行補償,並且將脈波振幅資料電壓V DATA_PAM及脈波寬度資料電壓V DATA_PWM寫入畫素電路100。 During the compensation period (2), the control signal S1[n] and the multiple luminescence signal mEM[n] are at a gate low voltage V GL , and the control signal S1[n-1] and the luminescence signal EM[n] are at a gate high voltage V GH . At this time, transistors T5, T7, T9, T10, T12, T13, and T15 are turned on, and transistors T4, T6, T8, T11, T14, and T16 are turned off (i.e., not turned on). Therefore, the voltage level of node A is the third reference voltage V REF3 minus the critical voltage of transistor T1, the voltage level of node B is the third reference voltage V REF3 , the voltage level of node C is the pulse amplitude data voltage V DATA_PAM , the voltage level of node D is the pulse width data voltage V DATA_PWM minus the critical voltage of transistor T3, the voltage level of node E is the pulse width data voltage V DATA_PWM , the voltage level of node F is the first reference voltage V REF1 , and the voltage level of node G is the third reference voltage V REF3 . Furthermore, transistor T1 is turned on due to the voltage level of node A, transistors T2 and T16 are turned off due to the voltage level of node F, and transistor T3 is turned on due to the voltage level of node D. Thus, the critical voltages of transistors T1 and T3 of the pixel circuit 100 can be compensated, and the pulse amplitude data voltage V DATA_PAM and the pulse width data voltage V DATA_PWM can be written into the pixel circuit 100.

在穩定期間(3)中,發光信號EM[n]及多重發光信號mEM[n]為閘極低電壓V GL,並且控制信號S1[n]及控制信號S1[n-1]為閘極高電壓V GH。此時,電晶體T4、T5、T6、T10、T11以及T15呈現導通,並且電晶體T7、T8、T9、T12、T13、T14以及T16呈現截止(亦即不導通)。因此,節點A的電壓準位為第三參考電壓V REF3-電晶體T1的臨界電壓+第三參考電壓V REF3-脈波振幅資料電壓V DATA_PAM,節點B的電壓準位為第三參考電壓V REF3,節點C的電壓準位為第三參考電壓V REF3,節點D的電壓準位為脈波寬度資料電壓V DATA_PWM減去電晶體T3的臨界電壓,節點E的電壓準位為第二參考電壓V REF2,節點F的電壓準位為第一參考電壓V REF1,並且節點G的電壓準位為第三參考電壓V REF3。並且,電晶體T1因節點A的電壓準位而導通,電晶體T2及T16因節點F的電壓準位而截止,並且電晶體T3因節點D的電壓準位而截止。藉此,可將脈波振幅資料電壓V DATA_PAM移動到節點A。 During the stable period (3), the luminous signal EM[n] and the multiple luminous signal mEM[n] are at a gate low voltage V GL , and the control signal S1[n] and the control signal S1[n-1] are at a gate high voltage V GH . At this time, transistors T4, T5, T6, T10, T11 and T15 are turned on, and transistors T7, T8, T9, T12, T13, T14 and T16 are turned off (i.e., not turned on). Therefore, the voltage level of node A is the third reference voltage V REF3 −the critical voltage of transistor T1 + the third reference voltage V REF3 −the pulse amplitude data voltage V DATA_PAM , the voltage level of node B is the third reference voltage V REF3 , the voltage level of node C is the third reference voltage V REF3 , the voltage level of node D is the pulse width data voltage V DATA_PWM minus the critical voltage of transistor T3 , the voltage level of node E is the second reference voltage V REF2 , the voltage level of node F is the first reference voltage V REF1 , and the voltage level of node G is the third reference voltage V REF3 . Furthermore, the transistor T1 is turned on due to the voltage level of the node A, the transistors T2 and T16 are turned off due to the voltage level of the node F, and the transistor T3 is turned off due to the voltage level of the node D. Thus, the pulse amplitude data voltage V DATA_PAM can be moved to the node A.

在發光期間(4)中,發光信號EM[n]為閘極低電壓V GL,並且控制信號S1[n]、控制信號S1[n-1]及多重發光信號mEM[n]為閘極高電壓V GH。此時,電晶體T4、T6以及T11呈現導通,並且電晶體T5、T7、T8、T9、T10、T12、T13、T14、T15以及T16呈現截止(亦即不導通)。因此,節點A的電壓準位為第三參考電壓V REF3-電晶體T1的臨界電壓+第三參考電壓V REF3-脈波振幅資料電壓V DATA_PAM,節點B的電壓準位為第三參考電壓V REF3,節點C的電壓準位為第三參考電壓V REF3,節點D的電壓準位為脈波寬度資料電壓V DATA_PWM-電晶體T3的臨界電壓-|∆V|(亦即電壓變動量),節點E的電壓準位為第二參考電壓V REF2,節點F的電壓準位為第一參考電壓V REF1,並且節點G的電壓準位為第三參考電壓V REF3減去|∆V|。並且,電晶體T1因節點A的電壓準位而導通,電晶體T2及T16因節點F的電壓準位而截止,並且電晶體T3因節點D的電壓準位而截止。 During the luminescence period (4), the luminescence signal EM[n] is at a gate low voltage V GL , and the control signal S1[n], the control signal S1[n-1] and the multiple luminescence signal mEM[n] are at a gate high voltage V GH . At this time, transistors T4, T6 and T11 are turned on, and transistors T5, T7, T8, T9, T10, T12, T13, T14, T15 and T16 are turned off (i.e., not turned on). Therefore, the voltage level of node A is the third reference voltage VREF3 - the critical voltage of transistor T1 + the third reference voltage VREF3 - the pulse amplitude data voltage VDATA_PAM , the voltage level of node B is the third reference voltage VREF3 , the voltage level of node C is the third reference voltage VREF3 , the voltage level of node D is the pulse width data voltage VDATA_PWM - the critical voltage of transistor T3 - |∆V| (i.e., the voltage variation), the voltage level of node E is the second reference voltage VREF2 , and the voltage level of node F is the first reference voltage VREF1 , and the voltage level of the node G is the third reference voltage VREF3 minus |∆V|. Furthermore, the transistor T1 is turned on by the voltage level of the node A, the transistors T2 and T16 are turned off by the voltage level of the node F, and the transistor T3 is turned off by the voltage level of the node D.

在本實施例中,電晶體T3在E點與D點間的電壓差大於電晶體T3的臨界電壓時導通,亦即第二參考電壓V REF2-(脈波寬度資料電壓V DATA_PWM-電晶體T3的臨界電壓-|∆V|)>電晶體T3的臨界電壓時導通。透過推導,上述可化簡為|∆V|>脈波寬度資料電壓V DATA_PWM-第二參考電壓V REF2,也就是說,在電壓變動量∆V大於脈波寬度資料電壓V DATA_PWM-第二參考電壓V REF2時,電晶體T3會導通。接著,節點F的電壓準位會由第一參考電壓V REF1充電至第二參考電壓V REF2,進而導通電晶體T2及T16。 In this embodiment, transistor T3 is turned on when the voltage difference between point E and point D is greater than the critical voltage of transistor T3, that is, the second reference voltage V REF2 - (pulse width data voltage V DATA_PWM - critical voltage of transistor T3 - |∆V|)> the critical voltage of transistor T3. Through deduction, the above can be simplified to |∆V|> pulse width data voltage V DATA_PWM - second reference voltage V REF2 , that is, when the voltage variation ∆V is greater than the pulse width data voltage V DATA_PWM - second reference voltage V REF2 , transistor T3 will be turned on. Then, the voltage level of the node F is charged from the first reference voltage V REF1 to the second reference voltage V REF2 , thereby turning on the transistors T2 and T16 .

在電晶體T2及T16導通後,節點A的電壓準位為第三參考電壓V REF3-電晶體T1的臨界電壓-脈波振幅資料電壓V DATA_PAM+系統高電壓V DD-V LED(亦即發光二極體LED1的跨壓),節點B的電壓準位為系統高電壓V DD-V LED,節點C的電壓準位為系統高電壓V DD-V LED,節點D的電壓準位為脈波寬度資料電壓V DATA_PWM-電晶體T3的臨界電壓+第一參考電壓V REF1-第三參考電壓V REF3,節點E的電壓準位為第二參考電壓V REF2,節點F的電壓準位為第二參考電壓V REF2,並且節點G的電壓準位為第一參考電壓V REF1。此時,驅動電流I DR=K(V DATA_PWM-V REF3) 2,其中K為電流係數。 After transistors T2 and T16 are turned on, the voltage level of node A is the third reference voltage VREF3 - the critical voltage of transistor T1 - the pulse amplitude data voltage VDATA_PAM + the system high voltage VDD -VLED (i.e., the voltage across the light-emitting diode LED1), the voltage level of node B is the system high voltage VDD -VLED , the voltage level of node C is the system high voltage VDD -VLED , the voltage level of node D is the pulse width data voltage VDATA_PWM - the critical voltage of transistor T3 + the first reference voltage VREF1 - the third reference voltage VREF3 , and the voltage level of node E is the second reference voltage V REF2 , the voltage level of the node F is the second reference voltage V REF2 , and the voltage level of the node G is the first reference voltage V REF1 . At this time, the driving current I DR =K(V DATA — PWM -V REF3 ) 2 , where K is the current coefficient.

在本實施例中,在電晶體T16導通後,節點G被放電至比第三參考電壓V REF3更低VREF3第一參考電壓V REF1,使得節點D被耦合至更低的電位,讓電晶體T8可以打更開(亦即提高導通的程度),進而提高節點F的充電速度(亦即縮短節點F的電壓準位由第一參考電壓V REF1充電至第二參考電壓V REF2的所需時間)。 In the present embodiment, after transistor T16 is turned on, node G is discharged to a first reference voltage VREF1 which is lower than the third reference voltage VREF3 , so that node D is coupled to a lower potential, allowing transistor T8 to be further opened (i.e., the degree of conduction is increased), thereby increasing the charging speed of node F (i.e., shortening the time required for the voltage level of node F to charge from the first reference voltage VREF1 to the second reference voltage VREF2 ).

在關閉期間(5)中,多重發光信號mEM[n]為閘極低電壓V GL,並且控制信號S1[n]、控制信號S1[n-1]及發光信號EM[n]為閘極高電壓V GH。此時,電晶體T5、T10、T12以及T15呈現導通,並且電晶體T4、T6、T7、T8、T9、T11、T13、T14、以及T16呈現截止(亦即不導通)。因此,節點A的電壓準位為第三參考電壓V REF3-電晶體T1的臨界電壓,節點B的電壓準位為第三參考電壓V REF3,節點C的電壓準位為脈波振幅資料電壓V DATA_PAM,節點D的電壓準位為脈波寬度資料電壓V DATA_PWM-電晶體T3的臨界電壓,節點E的電壓準位為第二參考電壓V REF2,節點F的電壓準位為第一參考電壓V REF1,並且節點G的電壓準位為第三參考電壓V REF3。並且,電晶體T1因節點A的電壓準位而截止,電晶體T2及T16因節點F的電壓準位而截止,並且電晶體T3因節點D的電壓準位而截止。 During the off period (5), the multiple luminous signal mEM[n] is at a gate low voltage V GL , and the control signal S1[n], the control signal S1[n-1] and the luminous signal EM[n] are at a gate high voltage V GH . At this time, transistors T5, T10, T12 and T15 are turned on, and transistors T4, T6, T7, T8, T9, T11, T13, T14 and T16 are turned off (i.e., not turned on). Therefore, the voltage level of node A is the third reference voltage V REF3 - the critical voltage of transistor T1, the voltage level of node B is the third reference voltage V REF3 , the voltage level of node C is the pulse amplitude data voltage V DATA_PAM , the voltage level of node D is the pulse width data voltage V DATA_PWM - the critical voltage of transistor T3, the voltage level of node E is the second reference voltage V REF2 , the voltage level of node F is the first reference voltage V REF1 , and the voltage level of node G is the third reference voltage V REF3 . Furthermore, the transistor T1 is turned off due to the voltage level of the node A, the transistors T2 and T16 are turned off due to the voltage level of the node F, and the transistor T3 is turned off due to the voltage level of the node D.

在本發明實施例中,系統高電壓V DD、系統低電壓V SS、閘極高電壓V GH、閘極低電壓V GL、擺盪高電壓V SH、擺盪低電壓V SL、脈波振幅資料電壓V DATA_PAM、第一參考電壓V REF1、第二參考電壓V REF2、第三參考電壓V REF3之間的大小可以參照下述不等式:V GH> V SH> V DATA_PAM> V REF3> V DD> V REF2> V SL> V SS> V REF1> V GL,但本發明不以此為限。 In the embodiment of the present invention, the sizes of the system high voltage V DD , the system low voltage V SS , the gate high voltage V GH , the gate low voltage V GL , the swing high voltage V SH , the swing low voltage V SL , the pulse amplitude data voltage V DATA_PAM , the first reference voltage V REF1 , the second reference voltage V REF2 , and the third reference voltage V REF3 can refer to the following inequality: V GH > V SH > V DATA_PAM > V REF3 > V DD > V REF2 > V SL > V SS > V REF1 > V GL , but the present invention is not limited thereto.

在本發明實施例中,重置期間(1)補償期間(2)、穩定期間(3)的時間長度可以個別為1個水平掃描期間,並且發光期間(4)的時間長度可以為2個水平掃描期間,此為依據電路設計而定,本發明實施例不以此為限。In the embodiment of the present invention, the duration of the reset period (1), the compensation period (2), and the stabilization period (3) can be one horizontal scanning period respectively, and the duration of the light-emitting period (4) can be two horizontal scanning periods. This depends on the circuit design, and the embodiment of the present invention is not limited thereto.

綜上所述,本發明實施例的畫素電路,電流路徑上僅兩顆電晶體,可降低電源供應之跨壓;並且於發光二極體的發光階段時透過電壓耦合調整第三電晶體的閘極電壓來調整加大第三電晶體之開啟程度,減少開啟發光二極體的所需時間。因此,可以有效補償驅動電晶體(亦即第一電晶體)與控制電晶體(亦即第三電晶體)的臨界電壓以及補償系統高電壓的電流電阻壓降,並大幅減少第二電晶體的閘極電壓的上升時間佔整體發光時間之比例,提升灰階控制能力。In summary, the pixel circuit of the embodiment of the present invention has only two transistors in the current path, which can reduce the cross-voltage of the power supply; and in the light-emitting stage of the light-emitting diode, the gate voltage of the third transistor is adjusted through voltage coupling to adjust and increase the opening degree of the third transistor, thereby reducing the time required to turn on the light-emitting diode. Therefore, the critical voltage of the driving transistor (i.e., the first transistor) and the control transistor (i.e., the third transistor) can be effectively compensated, as well as the current resistance voltage drop of the high voltage of the system, and the proportion of the rising time of the gate voltage of the second transistor to the overall light-emitting time can be greatly reduced, thereby improving the grayscale control capability.

雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明的精神和範圍內,當可作些許的更動與潤飾,故本發明的保護範圍當視後附的申請專利範圍所界定者為準。Although the present invention has been disclosed as above by the embodiments, they are not intended to limit the present invention. Any person with ordinary knowledge in the relevant technical field can make some changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention shall be defined by the scope of the attached patent application.

100:畫素電路 A~G:節點 C1~C4:電容 EM[n]:發光信號 I DR:驅動電流 LED1:發光二極體 mEM[n]:多重發光信號 PCT1:第一補償寫入電路 PCT2:第二補償寫入電路 PLCT:電壓調整電路 S1[n]、S1[n-1]:控制信號 T1~T16:電晶體 V DATA_PAM:脈波振幅資料電壓 V DATA_PWM:脈波寬度資料電壓 V DD:系統高電壓 V GH:閘極高電壓 V GL:閘極低電壓 V REF1:第一參考電壓 V REF2:第二參考電壓 V REF3:第三參考電壓 V SH:擺盪高電壓 V SL:擺盪低電壓 V SS:系統低電壓 V SWEEP[n]:擺盪信號 (1):重置期間 (2):補償期間 (3):穩定期間 (4):發光期間 (5):關閉期間 100: Pixel circuit A~G: Nodes C1~C4: Capacitor EM[n]: Light emitting signal I DR : Driving current LED1: Light emitting diode mEM[n]: Multiple light emitting signals PCT1: First compensation write circuit PCT2: Second compensation write circuit PLCT: Voltage adjustment circuit S1[n], S1[n-1]: Control signal T1~T16: Transistor V DATA_PAM : Pulse amplitude data voltage V DATA_PWM : Pulse width data voltage V DD : System high voltage V GH : Gate high voltage V GL : Gate low voltage V REF1 : First reference voltage V REF2 : Second reference voltage V REF3 : Third reference voltage V SH : Swing high voltage V SL : Swing low voltage V SS : System low voltage V SWEEP [n]: Swing signal (1): Reset period (2): Compensation period (3): Stabilization period (4): Lighting period (5): Shutdown period

圖1為依據本發明一實施例的畫素電路的電路示意圖。 圖2為依據本發明一實施例的畫素電路的驅動波形示意圖。 FIG1 is a circuit diagram of a pixel circuit according to an embodiment of the present invention. FIG2 is a driving waveform diagram of a pixel circuit according to an embodiment of the present invention.

100:畫素電路 100: Pixel circuit

A~G:節點 A~G: Node

C1~C4:電容 C1~C4: Capacitor

EM[n]:發光信號 EM[n]: luminous signal

IDR:驅動電流 I DR : Driving current

LED1:發光二極體 LED1: light emitting diode

mEM[n]:多重發光信號 mEM[n]: multiple luminescence signals

PCT1:第一補償寫入電路 PCT1: First compensation write circuit

PCT2:第二補償寫入電路 PCT2: Second compensation writing circuit

PLCT:電壓調整電路 PLCT: Voltage regulation circuit

S1[n]、S1[n-1]:控制信號 S1[n], S1[n-1]: control signal

T1~T16:電晶體 T1~T16: Transistor

VDATA_PAM:脈波振幅資料電壓 V DATA_PAM : Pulse amplitude data voltage

VDATA_PWM:脈波寬度資料電壓 V DATA_PWM : Pulse width data voltage

VDD:系統高電壓 V DD : System high voltage

VREF1:第一參考電壓 V REF1 : First reference voltage

VREF2:第二參考電壓 V REF2 : Second reference voltage

VREF3:第三參考電壓 V REF3 : Third reference voltage

VSS:系統低電壓 V SS : System low voltage

VSWEEP[n]:擺盪信號 V SWEEP [n]: Swing signal

Claims (8)

一種畫素電路,包括:一發光二極體,具有接收一系統高電壓的一陽極及一陰極;一第一電晶體,具有耦接該發光二極體的該陰極的一第一端、一控制端、以及一第二端;一第二電晶體,具有耦接該第一電晶體的該第二端的一第一端、一控制端、以及接收一系統低電壓的一第二端;一第三電晶體,具有一第一端、一控制端、以及一第二端;一第四電晶體,具有耦接該第三電晶體的該第二端的一第一端、接收一發光信號的一控制端、以及耦接該第二電晶體的該控制端的一第二端;一第五電晶體,具有耦接該第二電晶體的該控制端的一第一端、接收一多重發光信號的一控制端、以及接收一第一參考電壓的一第二端;一第一電容,耦接於該第二電晶體的該控制端與該第一參考電壓之間;一第二電容,耦接該第三電晶體的該控制端;一第三電容,耦接於該第二電容與一擺盪信號之間;一第一補償寫入電路,接收一脈波寬度資料電壓,且耦接該第三電晶體的該第一端、該控制端及該第二端,以對該第三電晶體的一臨界電壓進行補償,且基於該脈波寬度資料電壓進行資料寫入; 一第二補償寫入電路,接收一脈波振幅資料電壓,且耦接該第一電晶體的該第一端、該控制端及該第二端,以對該第一電晶體的一臨界電壓進行補償,且基於該脈波振幅資料電壓進行資料寫入;以及一電壓調整電路,耦接該第二電容與該第三電容之間的一連接點,且耦接該第四電晶體的該第二端,以反應於該發光二極體的發光調整該連接點的一電壓準位。 A pixel circuit includes: a light-emitting diode having an anode and a cathode for receiving a system high voltage; a first transistor having a first end coupled to the cathode of the light-emitting diode, a control end, and a second end; a second transistor having a first end coupled to the second end of the first transistor, a control end, and a second end for receiving a system low voltage; a third transistor having a first end, a control end, and a third end. a fourth transistor having a first end coupled to the second end of the third transistor, a control end receiving a light-emitting signal, and a second end coupled to the control end of the second transistor; a fifth transistor having a first end coupled to the control end of the second transistor, a control end receiving a multiple light-emitting signal, and a second end receiving a first reference voltage; a first capacitor coupled between the control end of the second transistor and the first transistor; a reference voltage; a second capacitor coupled to the control end of the third transistor; a third capacitor coupled between the second capacitor and a swing signal; a first compensation write circuit receiving a pulse width data voltage and coupled to the first end, the control end and the second end of the third transistor to compensate for a critical voltage of the third transistor and write data based on the pulse width data voltage; a second compensation write circuit, Receive a pulse amplitude data voltage, and couple the first end, the control end and the second end of the first transistor to compensate a critical voltage of the first transistor, and write data based on the pulse amplitude data voltage; and a voltage adjustment circuit, coupled to a connection point between the second capacitor and the third capacitor, and coupled to the second end of the fourth transistor, to adjust a voltage level of the connection point in response to the light emission of the light-emitting diode. 如請求項1所述的畫素電路,其中該第一補償寫入電路包括:一第六電晶體,具有接收一第二參考電壓的一第一端、接收該發光信號的一控制端、以及耦接該第三電晶體的該第一端的一第二端;一第七電晶體,具有耦接該第三電晶體的該第一端的一第一端、接收一第一控制信號的一控制端、以及接收該脈波寬度資料電壓的一第二端;一第八電晶體,具有接收該第一參考電壓的一第一端、接收一第二控制信號的一控制端、以及耦接該第三電晶體的該控制端的一第二端;以及一第九電晶體,具有耦接該第三電晶體的該控制端的一第一端、接收該第一控制信號的一控制端、以及耦接該第三電晶體的該第二端的一第二端。 The pixel circuit as described in claim 1, wherein the first compensation writing circuit comprises: a sixth transistor having a first end receiving a second reference voltage, a control end receiving the light-emitting signal, and a second end coupled to the first end of the third transistor; a seventh transistor having a first end coupled to the first end of the third transistor, a control end receiving a first control signal, and a second end receiving the pulse width data voltage; an eighth transistor having a first end receiving the first reference voltage, a control end receiving a second control signal, and a second end coupled to the control end of the third transistor; and a ninth transistor having a first end coupled to the control end of the third transistor, a control end receiving the first control signal, and a second end coupled to the second end of the third transistor. 如請求項2所述的畫素電路,其中該第二補償寫入電路包括:一第十電晶體,具有接收一第三參考電壓的一第一端、接收該多重發光信號的一控制端、以及耦接該第一電晶體的該第一端的一第二端;一第十一電晶體,具有耦接該第一電晶體的該第一端的一第一端、接收該發光信號的一控制端、以及一第二端;一第十二電晶體,具有耦接該第十一電晶體的該第二端的一第一端、接收該發光信號的一控制端、以及接收該脈波寬度資料電壓的一第二端;一第四電容,耦接於該第十一電晶體的該第二端與該第一電晶體的該控制端之間;一第十三電晶體,具有耦接該第一電晶體的該第二端的一第一端、接收該第一控制信號的一控制端、以及耦接該第三電晶體的該控制端的一第二端;以及一第十四電晶體,具有耦接該第三電晶體的該控制端的一第一端、接收該第二控制信號的一控制端、以及接收該第一參考電壓的一第二端。 The pixel circuit as described in claim 2, wherein the second compensation writing circuit comprises: a tenth transistor having a first end receiving a third reference voltage, a control end receiving the multiple light-emitting signals, and a second end coupled to the first end of the first transistor; an eleventh transistor having a first end coupled to the first end of the first transistor, a control end receiving the light-emitting signals, and a second end; a twelfth transistor having a first end coupled to the second end of the eleventh transistor, a control end receiving the light-emitting signals, and a second end. a second end receiving the pulse width data voltage; a fourth capacitor coupled between the second end of the eleventh transistor and the control end of the first transistor; a thirteenth transistor having a first end coupled to the second end of the first transistor, a control end receiving the first control signal, and a second end coupled to the control end of the third transistor; and a fourteenth transistor having a first end coupled to the control end of the third transistor, a control end receiving the second control signal, and a second end receiving the first reference voltage. 如請求項3所述的畫素電路,其中該電壓調整電路包括: 一第十五電晶體,具有接收該第三參考電壓的一第一端、接收該多重發光信號的一控制端、以及耦接該連接點的一第二端;以及一第十六電晶體,具有耦接該連接點的一第一端、耦接該第四電晶體的該第二端的一控制端、以及接收該第一參考電壓的一第二端。 The pixel circuit as described in claim 3, wherein the voltage adjustment circuit comprises: a fifteenth transistor having a first end receiving the third reference voltage, a control end receiving the multiple light-emitting signals, and a second end coupled to the connection point; and a sixteenth transistor having a first end coupled to the connection point, a control end coupled to the second end of the fourth transistor, and a second end receiving the first reference voltage. 如請求項4所述的畫素電路,其中該第一電晶體、該第三電晶體、該第四電晶體、該第五電晶體、該第六電晶體、該第七電晶體、該第八電晶體、該第九電晶體、該第十電晶體、該第十一電晶體、該第十三電晶體、該第十四電晶體以及該第十五電晶體個別為一P型電晶體,並且該第二電晶體、該第十二電晶體以及該第十六電晶體個別為一N型電晶體。 The pixel circuit as described in claim 4, wherein the first transistor, the third transistor, the fourth transistor, the fifth transistor, the sixth transistor, the seventh transistor, the eighth transistor, the ninth transistor, the tenth transistor, the eleventh transistor, the thirteenth transistor, the fourteenth transistor and the fifteenth transistor are each a P-type transistor, and the second transistor, the twelfth transistor and the sixteenth transistor are each an N-type transistor. 如請求項2所述的畫素電路,其中該第二控制信號的相位領先該第一控制信號。 A pixel circuit as described in claim 2, wherein the phase of the second control signal leads the first control signal. 如請求項1所述的畫素電路,其中一驅動電流僅經由該第一電晶體及該第二電晶體提供至該發光二極體。 A pixel circuit as described in claim 1, wherein a driving current is provided to the light-emitting diode only through the first transistor and the second transistor. 如請求項1所述的畫素電路,其中該發光二極體包括一微型發光二極體。 A pixel circuit as described in claim 1, wherein the light-emitting diode comprises a micro light-emitting diode.
TW112142432A 2023-11-03 2023-11-03 Pixel circuit TWI852824B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW112142432A TWI852824B (en) 2023-11-03 2023-11-03 Pixel circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW112142432A TWI852824B (en) 2023-11-03 2023-11-03 Pixel circuit

Publications (2)

Publication Number Publication Date
TWI852824B true TWI852824B (en) 2024-08-11
TW202520233A TW202520233A (en) 2025-05-16

Family

ID=93284309

Family Applications (1)

Application Number Title Priority Date Filing Date
TW112142432A TWI852824B (en) 2023-11-03 2023-11-03 Pixel circuit

Country Status (1)

Country Link
TW (1) TWI852824B (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201430810A (en) * 2013-01-17 2014-08-01 Samsung Display Co Ltd Pixel and organic light emitting display using the same
US20230008643A1 (en) * 2021-07-12 2023-01-12 Samsung Display Co., Ltd. Pixel and display device
CN116631331A (en) * 2023-06-20 2023-08-22 北京欧铼德微电子技术有限公司 OLED pixel circuit, driving method thereof, and display panel

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201430810A (en) * 2013-01-17 2014-08-01 Samsung Display Co Ltd Pixel and organic light emitting display using the same
US20230008643A1 (en) * 2021-07-12 2023-01-12 Samsung Display Co., Ltd. Pixel and display device
CN116631331A (en) * 2023-06-20 2023-08-22 北京欧铼德微电子技术有限公司 OLED pixel circuit, driving method thereof, and display panel

Also Published As

Publication number Publication date
TW202520233A (en) 2025-05-16

Similar Documents

Publication Publication Date Title
WO2021088792A1 (en) Pixel driving circuit, display device, and pixel driving circuit driving method
TWI828337B (en) Pixel circuit and display panel
TWI766639B (en) Self-luminous pixel circuit
KR102825985B1 (en) Power provider and driving method thereof
TWI827343B (en) Pixel circuit and driving method thereof
TW202416256A (en) Pixel circuit
CN114783353A (en) Mu LED unit light-emitting circuit, light-emitting control method thereof and display device
CN114783382A (en) Pixel circuit, driving method thereof, display panel and display device
TW202420285A (en) Pixel circuit
TWI415514B (en) Driving circuit and method of light emitting diode
TW202113784A (en) Pixel circuit
TWI754478B (en) Pixel circuit
TWI852824B (en) Pixel circuit
TWI889141B (en) Display panel
TWI819853B (en) Pixel circuit
CN108831375A (en) A kind of pixel circuit and its driving method, display device
TWI868983B (en) Pixel circuit
CN118015980A (en) Driving circuit
TW202429424A (en) Display panel
TW202410005A (en) Display panel
TW202414367A (en) Pixel circuit
TWI855788B (en) Display panel and pixel circuit thereof
CN113129807B (en) Light emitting diode pixel display unit, light emitting diode display device and brightness adjusting method thereof
TWI868975B (en) Pixel circuit
CN118824155A (en) Display device