TWI868975B - Pixel circuit - Google Patents
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- TWI868975B TWI868975B TW112138779A TW112138779A TWI868975B TW I868975 B TWI868975 B TW I868975B TW 112138779 A TW112138779 A TW 112138779A TW 112138779 A TW112138779 A TW 112138779A TW I868975 B TWI868975 B TW I868975B
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- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
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Abstract
Description
本揭示文件有關顯示技術,尤指一種發光二極體畫素電路。This disclosure relates to display technology, and more particularly to a light emitting diode pixel circuit.
相較於液晶顯示器,微發光二極體(micro LED)顯示器具有低功率消耗、高色彩飽和度和高反應速度等優點,使得微發光二極體顯示器被視為下一代主流顯示器產品的熱門技術之一。傳統的微發光二極體顯示器藉由調整提供給畫素電路的電流,來控制畫素電路中的微發光二極體產生的光線的亮度,這種方法稱為脈波振幅調變(pulse amplitude modulation,PAM)。Compared with liquid crystal displays, micro LED displays have advantages such as low power consumption, high color saturation and high response speed, making micro LED displays one of the hot technologies for the next generation of mainstream display products. Traditional micro LED displays control the brightness of the light generated by the micro LED in the pixel circuit by adjusting the current supplied to the pixel circuit. This method is called pulse amplitude modulation (PAM).
另一方面,脈波寬度調變(pulse width modulation,PWM)透過調整在一個脈波周期內的訊號占空比(duty ratio),利用視覺暫留的現象,使得微發光二極體在視覺上呈現不同的灰階值。相較於PAM藉由電流來控制微發光二極體產生的光線的亮度,PWM控制的是發光的時間長度,故可避免微發光二極體在不同電流下發光效率及波長不同的問題,進而減少色偏。On the other hand, pulse width modulation (PWM) uses the phenomenon of visual retention to make the micro-LED present different grayscale values visually by adjusting the signal duty ratio within a pulse cycle. Compared with PAM, which controls the brightness of the light generated by the micro-LED by current, PWM controls the duration of the light emission, so it can avoid the problem of different light efficiency and wavelength of the micro-LED under different currents, thereby reducing color deviation.
然而,習知技術中,PWM畫素電路需要大量訊號進行開關操作,通常也需要更多的元件,因此導致電路布局空間受到限制。However, in the prior art, PWM pixel circuits require a large number of signals for switching operations and usually require more components, thus limiting the circuit layout space.
本揭示文件提供一種畫素電路,其包含驅動電晶體、控制電路、第一電晶體、脈波輸入電路以及發光單元。驅動電晶體包含第一端、第二端和控制端。驅動電晶體的第一端用於透過第一節點接收第一工作電壓,驅動電晶體的第二端耦接於第二節點。控制電路耦接於驅動電晶體的控制端和第二節點,用於依據資料電壓與驅動電晶體的臨界電壓控制驅動電晶體的導通程度。第一電晶體包含第一端、第二端和控制端。第一電晶體的第一端和控制端分別耦接於第一節點和第二節點。脈波輸入電路耦接於第二節點,用於依據發光控制訊號的控制,將時脈訊號耦合至第二節點。發光單元包含第一端和第二端。發光單元的第一端耦接於第一電晶體的第二端,發光單元的第二端用於接收第二工作電壓。The present disclosure document provides a pixel circuit, which includes a driving transistor, a control circuit, a first transistor, a pulse input circuit and a light-emitting unit. The driving transistor includes a first end, a second end and a control end. The first end of the driving transistor is used to receive a first working voltage through a first node, and the second end of the driving transistor is coupled to the second node. The control circuit is coupled to the control end and the second node of the driving transistor, and is used to control the conduction degree of the driving transistor according to the data voltage and the critical voltage of the driving transistor. The first transistor includes a first end, a second end and a control end. The first end and the control end of the first transistor are coupled to the first node and the second node respectively. The pulse input circuit is coupled to the second node, and is used to couple the clock signal to the second node according to the control of the light-emitting control signal. The light-emitting unit comprises a first end and a second end. The first end of the light-emitting unit is coupled to the second end of the first transistor, and the second end of the light-emitting unit is used to receive a second working voltage.
本揭示文件提供一種畫素電路,其包含發光單元、驅動電晶體、第一電晶體、控制電路以及脈波輸入電路。驅動電晶體用於透過第一節點接收第一工作電壓以對第二節點充電。第一電晶體,耦接於第一節點與發光單元之間,包含耦接於第二節點的控制端,用於決定發光單元接收第一工作電壓的時間長度。控制電路耦接於驅動電晶體的控制端和第二節點,用於依據資料電壓與驅動電晶體的臨界電壓控制驅動電晶體的導通程度。脈波輸入電路,耦接於第二節點,用於依據發光控制訊號的控制,將時脈訊號耦合至第二節點。The present disclosure document provides a pixel circuit, which includes a light-emitting unit, a driving transistor, a first transistor, a control circuit, and a pulse input circuit. The driving transistor is used to receive a first working voltage through a first node to charge a second node. The first transistor is coupled between the first node and the light-emitting unit, and includes a control end coupled to the second node, which is used to determine the length of time the light-emitting unit receives the first working voltage. The control circuit is coupled to the control end of the driving transistor and the second node, and is used to control the conduction degree of the driving transistor according to the data voltage and the critical voltage of the driving transistor. The pulse input circuit is coupled to the second node, and is used to couple a clock signal to the second node according to the control of a light-emitting control signal.
上述畫素電路的優點之一,在於元件數量少且具有小電路面積。One of the advantages of the above pixel circuit is that it has a small number of components and a small circuit area.
以下將配合相關圖式來說明本揭示文件的實施例。在圖式中,相同的標號表示相同或類似的元件或方法流程。The following will be used in conjunction with the relevant drawings to illustrate the embodiments of the present disclosure. In the drawings, the same reference numerals represent the same or similar elements or method flows.
第1圖為依據本揭示文件一實施例的畫素電路100的功能方塊圖。畫素電路100包含驅動電晶體Td、脈波輸入電路110、控制電路120、第一電晶體T1、第一節點N1、第二節點N2以及發光單元130。第一節點N1接收一第一工作電壓OVDD,並耦接於驅動電晶體Td的第一端。發光單元130包含第一端(例如,陽極端)和第二端(例如,陰極端),發光單元130的第一端耦接於第一電晶體T1的第二端,發光單元130的第二端用於接收第二工作電壓OVSS。FIG. 1 is a functional block diagram of a
脈波輸入電路110包含第二電晶體T2和第一電容C1,且耦接於第二節點N2。脈波輸入電路110用於依據發光控制訊號EM的控制,將時脈訊號EM_pulse透過第一電容C1耦合至第二節點N2。第二電晶體T2包含第一端、第二端和控制端,其中第二電晶體T2的第二端和控制端分別用於接收時脈訊號EM_pulse和發光控制訊號EM。第一電容C1耦接於第二節點N2和第二電晶體T2的第一端之間。The
控制電路120包含第二電容C2、資料寫入電路121、補償電路122以及重置電路123。控制電路120用於接收資料電壓Vdata、發光控制訊號EM、第一參考電壓VrefP和第二參考電壓VrefN,且耦接於驅動電晶體Td的控制端和第二節點N2。控制電路120還用於依據資料電壓Vdata將驅動電晶體Td操作於飽和區(saturation region),且用於補償驅動電晶體Td的臨界電壓變異,故控制電路120用於依據資料電壓Vdata與驅動電晶體Td的臨界電壓,控制驅動電晶體Td的導通程度。在一些實施例中,「導通程度」可以是流過驅動電晶體Td的電流大小。The
資料寫入電路121包含第三電晶體T3以及第四電晶體T4,用於接收第一參考電壓VrefP、發光控制訊號EM以及資料電壓Vdata。第三電晶體T3與第四電晶體T4各自包含第一端、第二端和控制端。第三電晶體T3的第一端和控制端分別用於接收該第一參考電壓VrefP和發光控制訊號EM。第四電晶體T4的第一端和控制端分別用於接收資料電壓Vdata和第一控制訊號S1。另外,第三電晶體T3的第二端與第四電晶體T4的第二端耦接於第二電容C2的第二端。第二電容C2的第一端,耦接於驅動電晶體Td的控制端。The
補償電路122包含第五電晶體T5,用於接收第一控制訊號S1。第五電晶體T5包含第一端、第二端和控制端。第五電晶體T5的第一端和第二端分別耦接於驅動電晶體Td的控制端和第二節點N2,第五電晶體T5的控制端用於接收第一控制訊號S1。The
重置電路123包含第六電晶體T6,用於接收第二控制訊號S2以及第二參考電壓VrefN。第六電晶體T6包含第一端、第二端和控制端。第六電晶體T6的第一端和控制端分別用於接收第二參考電壓VrefN和第二控制訊號S2,且第六電晶體T6的第二端耦接於驅動電晶體Td的控制端。The
在一些實施例中,第一電晶體T1至第六電晶體T6可以由各種合適的P型電晶體來實現,例如薄膜電晶體或金氧半場效(MOS)電晶體。在一些實施例中,發光單元130可以由各種合適的發光二極體實現,例如有機發光二極體(OLED)或微發光二極體(micro-LED)。In some embodiments, the first transistor T1 to the sixth transistor T6 can be implemented by various suitable P-type transistors, such as thin film transistors or metal oxide semiconductor field effect (MOS) transistors. In some embodiments, the light-emitting
在一些實施例中,第一工作電壓OVDD大於第二工作電壓OVSS。在另一些實施例中,第一參考電壓VrefP大於第二參考電壓VrefN。In some embodiments, the first operating voltage OVDD is greater than the second operating voltage OVSS. In other embodiments, the first reference voltage VrefP is greater than the second reference voltage VrefN.
第2圖為依據本揭示文件一實施例的畫素電路100的波形示意圖。畫素電路100在每一幀的操作包含重置階段TR、補償階段TC以及發光階段TE;在一些實施例中,畫素電路100在每一幀的運作包含依序排列的重置階段TR、補償階段TC以及發光階段TE。在以下的段落中,「致能準位」指的是足以導通電晶體的電壓準位,且「禁能準位」指的是足以關斷電晶體的電壓準位。在一些實施例中,第一控制訊號S1、第二控制訊號S2與發光控制訊號EM的致能準位可以相同或不同,且上述三個訊號的禁能準位也可以相同或不同。FIG. 2 is a waveform diagram of a
請一併參考第2圖以及第3圖,其中第3圖為根據本揭示文件一實施例的畫素電路100於重置階段的運作狀態示意圖。在重置階段TR中,第一控制訊號S1和第二控制訊號S2為致能準位(例如,低電壓準位),且發光控制訊號EM為禁能準位(例如,高電壓準位)。因此,第四電晶體T4、第五電晶體T5和第六電晶體T6導通,第二電晶體T2和第三電晶體T3關斷。因此,第二電容C2的第一端被充電至資料電壓Vdata,第二節點N2與第二電容C2的第二端與第二節點N2被重置至大約為第二參考電壓VrefN。Please refer to FIG. 2 and FIG. 3 together, wherein FIG. 3 is a schematic diagram of the operation state of the
請一併參考第2圖以及第4圖,其中第4圖為根據本揭示文件一實施例的畫素電路100於補償階段的運作狀態示意圖。在補償階段TC中,第一控制訊號S1為致能準位(例如,低電壓準位),且第二控制訊號S2和發光控制訊號EM為禁能準位(例如,高電壓準位)。因此,第四電晶體T4和第五電晶體T5導通,第二電晶體T2、第三電晶體T3和第六電晶體T6關斷。因此,第二節點N2與第二電容C2的第二端會被驅動電晶體Td充電至OVDD-Vthd,其中「Vthd」是驅動電晶體Td的臨界電壓。第二電容C2的第一端維持在資料電壓Vdata。Please refer to FIG. 2 and FIG. 4 together, wherein FIG. 4 is a schematic diagram of the operation state of the
請一併參考第2圖以及第5圖,其中第5圖為根據本揭示文件一實施例的畫素電路100於發光階段的運作狀態示意圖。在發光階段TE中,發光控制訊號EM為致能準位(例如,低電壓準位),且第一控制訊號S1和第二控制訊號S2為禁能準位(例如,高電壓準位)。因此,第二電晶體T2和第三電晶體T3導通,第四電晶體T4、第五電晶體T5和第六電晶體T6關斷。第二電容C2的第一端的電壓由資料電壓Vdata變為第一參考電壓VrefP。因此,基於電容耦合效應,驅動電晶體Td的控制端的電壓變為OVDD-Vthd+VrefP-Vdata。Please refer to FIG. 2 and FIG. 5 together, wherein FIG. 5 is a schematic diagram of the operation state of the
在發光階段TE中,通過驅動電晶體Td的電流可由下列公式一得到,其中「
」為驅動電晶體Td的導電參數(Conduction Parameter),「Idri」為通過驅動電晶體Td的電流:
《公式1》
In the light-emitting stage TE, the current passing through the driving transistor Td can be obtained by the following
在一些實施例中,在發光階段TE中,當時脈訊號EM_pulse下降時,由於電容耦合效應,第一電容C1的第一端(亦即第二節點N2)之電壓下降。因此,第一電晶體T1導通且產生傳遞至發光單元130的電流Iled,使得發光單元130發光。與此同時,驅動電晶體Td對第二節點N2充電直至第二節點N2的電壓變為OVDD。因此,第一電晶體T1關斷,使得發光單元130熄滅。由於時脈訊號EM_pulse在一幀(frame)當中多次上升與下降,發光單元130在發光階段TE中會多次發光與熄滅。In some embodiments, in the light-emitting stage TE, when the clock signal EM_pulse decreases, the voltage of the first end of the first capacitor C1 (i.e., the second node N2) decreases due to the capacitive coupling effect. Therefore, the first transistor T1 is turned on and generates a current Iled transmitted to the light-emitting
請一併參考公式一與第6圖,其中第6圖為根據本揭示文件一實施例的畫素電路100的電路模擬結果示意圖。驅動電晶體Td在發光階段TE會對第二節點N2進行多次充電,且驅動電晶體Td對第二節點N2的充電速度可由資料電壓Vdata控制。第二節點N2的電壓在第5~6圖中標示為電壓V2,電壓V2的多個曲線分別代表了電壓V2在不同的多個資料電壓Vdata下的多個變化情況。接著,由電流Iled的多個曲線可知,當電壓V2越快到達OVDD,則電流Iled的脈波寬度越小(亦即第一電晶體T1在發光階段TE中的導通時間越短)。因此,驅動電晶體Td對第二節點N2的充電速度決定了發光單元130每次點亮時的發光時間。由於視覺暫留的現象,驅動電晶體Td的導通程度(亦即,對第二節點N2的充電速度)決定了使用者在一幀中感受到的灰階值。Please refer to
由上述可知,畫素電路100是一個PWM調光電路(亦即,電流Iled具有PWM之波形),故畫素電路100可以避免發光單元130的發光效率及發光波長偏移的問題。另外,相較於傳統的PWM調光畫素電路通常需要多於10個電晶體,畫素電路100只需要7個電晶體,故畫素電路100具有元件數量少且總電路面積小的優點。As can be seen from the above, the
關於本文中所使用之「約」、「大約」或「大致約」一般通常係指數值之誤差或範圍在百分之二十以內,較好地是在百分之十以內,而更佳地則是在百分五之以內。文中若無明確說明,其所提及的數值皆視作為近似值,即如「約」、「大約」或「大致約」所表示的誤差或範圍。As used herein, "about", "approximately" or "roughly" generally refers to a numerical value with an error or range of less than 20%, preferably within 10%, and more preferably within 5%. If not explicitly stated in the text, the numerical values mentioned are deemed to be approximate values, that is, the error or range indicated by "about", "approximately" or "roughly".
在說明書及申請專利範圍中使用了某些詞彙來指稱特定的元件。然而,所屬技術領域中具有通常知識者應可理解,同樣的元件可能會用不同的名詞來稱呼。說明書及申請專利範圍並不以名稱的差異做為區分元件的方式,而是以元件在功能上的差異來做為區分的基準。在說明書及申請專利範圍所提及的「包含」為開放式的用語,故應解釋成「包含但不限定於」。另外,「耦接」在此包含任何直接及間接的連接手段。因此,若文中描述第一元件耦接於第二元件,則代表第一元件可通過電性連接或無線傳輸、光學傳輸等訊號連接方式而直接地連接於第二元件,或者通過其他元件或連接手段間接地電性或訊號連接至該第二元件。Certain terms are used in the specification and patent application to refer to specific components. However, a person with ordinary knowledge in the art should understand that the same component may be referred to by different terms. The specification and patent application do not use differences in names as a way to distinguish components, but use differences in the functions of the components as the basis for distinction. The term "including" mentioned in the specification and patent application is an open term and should be interpreted as "including but not limited to". In addition, "coupling" includes any direct and indirect connection means. Therefore, if the text describes a first component coupled to a second component, it means that the first component can be directly connected to the second component through electrical connection or signal connection methods such as wireless transmission, optical transmission, etc., or indirectly electrically or signal connected to the second component through other components or connection means.
另外,除非說明書中特別指明,否則任何單數格的用語都同時包含複數格的涵義。In addition, unless otherwise specified in the specification, any singular term also includes the plural term.
以上僅為本揭示文件的較佳實施例,在不脫離本揭示文件的範圍或精神的情況下,可以對本揭示文件進行各種修飾和均等變化。綜上所述,凡在以下請求項的範圍內對於本揭示文件所做的修飾以及均等變化,皆為本揭示文件所涵蓋的範圍。The above are only the preferred embodiments of this disclosure. Various modifications and equivalent changes can be made to this disclosure without departing from the scope or spirit of this disclosure. In summary, all modifications and equivalent changes made to this disclosure within the scope of the following claims are covered by this disclosure.
100:畫素電路100: Pixel circuit
110:脈波輸入電路110: Pulse input circuit
120:控制電路120: Control circuit
130:發光單元130: Light-emitting unit
121:資料寫入電路121: Data writing circuit
122:補償電路122: Compensation circuit
123:重置電路123: Reset circuit
T1:第一電晶體T1: First transistor
T2:第二電晶體T2: Second transistor
T3:第三電晶體T3: The third transistor
T4:第四電晶體T4: The fourth transistor
T5:第五電晶體T5: The fifth transistor
T6:第六電晶體T6: The sixth transistor
Td:驅動電晶體Td: driving transistor
N1:第一節點N1: First node
N2:第二節點N2: Second node
C1:第一電容C1: First capacitor
C2:第二電容C2: Second capacitor
Vdata:資料電壓Vdata: data voltage
OVDD:第一工作電壓OVDD: First operating voltage
OVSS:第二工作電壓OVSS: Second operating voltage
S1:第一控制訊號S1: First control signal
S2:第二控制訊號S2: Second control signal
EM:發光控制訊號EM: luminous control signal
EM_pulse:時脈訊號EM_pulse: pulse signal
VrefP:第一參考電壓VrefP: First reference voltage
VrefN:第二參考電壓VrefN: Second reference voltage
V2:第二節點的電壓V2: Voltage of the second node
Iled:發光單元的電流Iled: current of the light-emitting unit
第1圖為根據本揭示文件一實施例的畫素電路的功能方塊圖。 第2圖為根據本揭示文件一實施例的畫素電路的控制訊號波形示意圖。 第3圖為根據本揭示文件一實施例的畫素電路於重置階段的運作狀態示意圖。 第4圖為根據本揭示文件一實施例的畫素電路於補償階段的運作狀態示意圖。 第5圖為根據本揭示文件一實施例的畫素電路於發光階段的運作狀態示意圖。 第6圖為根據本揭示文件一實施例的畫素電路的電路模擬結果示意圖。 FIG. 1 is a functional block diagram of a pixel circuit according to an embodiment of the present disclosure document. FIG. 2 is a schematic diagram of a control signal waveform of a pixel circuit according to an embodiment of the present disclosure document. FIG. 3 is a schematic diagram of the operation state of a pixel circuit in a reset phase according to an embodiment of the present disclosure document. FIG. 4 is a schematic diagram of the operation state of a pixel circuit in a compensation phase according to an embodiment of the present disclosure document. FIG. 5 is a schematic diagram of the operation state of a pixel circuit in a light-emitting phase according to an embodiment of the present disclosure document. FIG. 6 is a schematic diagram of the circuit simulation result of a pixel circuit according to an embodiment of the present disclosure document.
100:畫素電路 100: Pixel circuit
110:脈波輸入電路 110: Pulse input circuit
120:控制電路 120: Control circuit
130:發光單元 130: Light-emitting unit
121:資料寫入電路 121: Data writing circuit
122:補償電路 122: Compensation circuit
123:重置電路 123: Reset circuit
T1:第一電晶體 T1: First transistor
T2:第二電晶體 T2: Second transistor
T3:第三電晶體 T3: The third transistor
T4:第四電晶體 T4: The fourth transistor
T5:第五電晶體 T5: The fifth transistor
T6:第六電晶體 T6: Sixth transistor
Td:驅動電晶體 Td: driving transistor
N1:第一節點 N1: First node
N2:第二節點 N2: Second node
C1:第一電容 C1: first capacitor
C2:第二電容 C2: Second capacitor
Vdata:資料電壓 Vdata: data voltage
OVDD:第一工作電壓 OVDD: first operating voltage
OVSS:第二工作電壓 OVSS: Second operating voltage
S1:第一控制訊號 S1: First control signal
S2:第二控制訊號 S2: Second control signal
EM:發光控制訊號 EM: luminous control signal
EM_pulse:時脈訊號 EM_pulse: pulse signal
VrefP:第一參考電壓 VrefP: first reference voltage
VrefN:第二參考電壓 VrefN: Second reference voltage
Claims (9)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW112138779A TWI868975B (en) | 2023-10-11 | 2023-10-11 | Pixel circuit |
| CN202410215064.7A CN117894267A (en) | 2023-10-11 | 2024-02-27 | Pixel circuit |
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| TW112138779A TWI868975B (en) | 2023-10-11 | 2023-10-11 | Pixel circuit |
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| Publication Number | Publication Date |
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| TWI868975B true TWI868975B (en) | 2025-01-01 |
| TW202516481A TW202516481A (en) | 2025-04-16 |
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| TW (1) | TWI868975B (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201112207A (en) * | 2005-08-12 | 2011-04-01 | Semiconductor Energy Lab | Display device |
| CN110875014A (en) * | 2018-08-30 | 2020-03-10 | 上海和辉光电有限公司 | Pixel circuit, driving method thereof and display panel |
| TW202119382A (en) * | 2019-11-12 | 2021-05-16 | 南韓商Lg顯示器股份有限公司 | Electroluminescent display panel having pixel driving circuit |
| US20220375417A1 (en) * | 2019-12-30 | 2022-11-24 | Lg Display Co., Ltd. | Gate driving circuit and display device using the same |
| US20220406260A1 (en) * | 2020-04-28 | 2022-12-22 | Chengdu Boe Optoelectronics Technology Co., Ltd. | Display panel, driving method, and display device |
| US20230215359A1 (en) * | 2021-12-31 | 2023-07-06 | Lg Display Co., Ltd. | Display device comprising pixel driving circuit |
-
2023
- 2023-10-11 TW TW112138779A patent/TWI868975B/en active
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- 2024-02-27 CN CN202410215064.7A patent/CN117894267A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201112207A (en) * | 2005-08-12 | 2011-04-01 | Semiconductor Energy Lab | Display device |
| CN110875014A (en) * | 2018-08-30 | 2020-03-10 | 上海和辉光电有限公司 | Pixel circuit, driving method thereof and display panel |
| TW202119382A (en) * | 2019-11-12 | 2021-05-16 | 南韓商Lg顯示器股份有限公司 | Electroluminescent display panel having pixel driving circuit |
| US20220375417A1 (en) * | 2019-12-30 | 2022-11-24 | Lg Display Co., Ltd. | Gate driving circuit and display device using the same |
| US20220406260A1 (en) * | 2020-04-28 | 2022-12-22 | Chengdu Boe Optoelectronics Technology Co., Ltd. | Display panel, driving method, and display device |
| US20230215359A1 (en) * | 2021-12-31 | 2023-07-06 | Lg Display Co., Ltd. | Display device comprising pixel driving circuit |
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| Publication number | Publication date |
|---|---|
| TW202516481A (en) | 2025-04-16 |
| CN117894267A (en) | 2024-04-16 |
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