TWI852665B - Electronic package module and method for fabricating the same - Google Patents
Electronic package module and method for fabricating the same Download PDFInfo
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- TWI852665B TWI852665B TW112124975A TW112124975A TWI852665B TW I852665 B TWI852665 B TW I852665B TW 112124975 A TW112124975 A TW 112124975A TW 112124975 A TW112124975 A TW 112124975A TW I852665 B TWI852665 B TW I852665B
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Abstract
Description
本發明是有關於一種電子封裝模組,特別是一種具有內埋式電子元件的電子封裝模組及其製造方法。The present invention relates to an electronic packaging module, in particular to an electronic packaging module with embedded electronic components and a manufacturing method thereof.
在電子元件封裝製程中,當元件表面用於焊接的接墊(pad)間距在150µm以下時,大多採用球柵陣列封裝(Ball grid array;BGA)技術。然而,在接墊上設置錫球的過程中,受到待焊元件以及電路板表面不平整的影響,易造成各個錫球高低不均的情形。錫球的高低不均會提高焊接過程中發生空焊或者虛焊的比例,進而降低焊接良率。In the electronic component packaging process, when the pitch of the pads used for soldering on the surface of the component is less than 150µm, the ball grid array (BGA) packaging technology is mostly used. However, in the process of placing solder balls on the pads, the uneven surface of the components to be soldered and the circuit board can easily cause the height of each solder ball to be uneven. The uneven height of the solder balls will increase the proportion of empty soldering or weak soldering during the soldering process, thereby reducing the soldering yield.
另一方面,當接墊的間距小於70µm時,由於相鄰錫球間的距離過近,經過焊接製程之後,各錫球之間容易發生橋接,因而造成短路的情形。On the other hand, when the pad pitch is less than 70µm, the distance between adjacent solder balls is too close, and after the soldering process, bridges are likely to occur between the solder balls, causing a short circuit.
因此,本發明提供了一種電子封裝模組,以及其製造方法,藉以改善焊接過程中接觸不良以及短路的情形。Therefore, the present invention provides an electronic packaging module and a manufacturing method thereof, so as to improve the poor contact and short circuit conditions during the welding process.
本發明一實施例所提供的電子封裝模組包含一內埋元件線路基板,而內埋元件線路基板包含至少一電子元件;多個第一接墊,位於電子元件上,並且與電子元件電性連接;以及一密封材料,包覆電子元件,且密封材料暴露第一接墊。內埋元件線路基板包含多個凹槽,位於內埋元件線路基板的一第一表面,且凹槽的每一者具有一底面,其中底面分別暴露第一接墊;以及多個焊接材料,分別位於底面上,並且直接接觸第一接墊,其中焊接材料包含遠離第一接墊的一界面,而此界面不凸出於內埋元件線路基板的第一表面。An electronic package module provided by an embodiment of the present invention includes an embedded component circuit substrate, and the embedded component circuit substrate includes at least one electronic component; a plurality of first pads located on the electronic component and electrically connected to the electronic component; and a sealing material covering the electronic component, and the sealing material exposes the first pad. The embedded component circuit substrate includes a plurality of grooves located on a first surface of the embedded component circuit substrate, and each of the grooves has a bottom surface, wherein the bottom surface respectively exposes the first pad; and a plurality of welding materials, respectively located on the bottom surface, and directly contacting the first pad, wherein the welding material includes an interface away from the first pad, and the interface does not protrude from the first surface of the embedded component circuit substrate.
在本發明的至少一實施例中,上述電子封裝模組還包含一線路基板,設置於焊接材料上,其中焊接材料位於內埋元件線路基板以及線路基板之間,並且電性連接內埋元件線路基板以及線路基板。In at least one embodiment of the present invention, the electronic package module further includes a circuit substrate disposed on the soldering material, wherein the soldering material is located between the embedded component circuit substrate and the circuit substrate, and electrically connects the embedded component circuit substrate and the circuit substrate.
在本發明的至少一實施例中,其中線路基板還包含多個第二接墊,位於線路基板的一第二表面,並且分別設置於焊接材料上,其中焊接材料位於第一接墊以及第二接墊之間,並且電性連接第一接墊以及第二接墊。In at least one embodiment of the present invention, the circuit substrate further includes a plurality of second pads located on a second surface of the circuit substrate and respectively disposed on the soldering material, wherein the soldering material is located between the first pad and the second pad and electrically connects the first pad and the second pad.
在本發明的至少一實施例中,其中內埋元件線路基板還包含一介電層,位於內埋元件線路基板的第一表面以及密封材料之間,其中凹槽從第一表面經過介電層而延伸至第一接墊。In at least one embodiment of the present invention, the embedded component circuit substrate further includes a dielectric layer located between the first surface of the embedded component circuit substrate and the sealing material, wherein the groove extends from the first surface through the dielectric layer to the first pad.
在本發明的至少一實施例中,其中焊接材料的界面與內埋元件線路基板的第一表面齊平。In at least one embodiment of the present invention, the interface of the solder material is flush with the first surface of the embedded component circuit substrate.
本發明還提供了一種電子封裝模組的製造方法,包含提供一初始線路基板;在初始線路基板中,設置一內埋結構,以形成一內埋元件線路基板,其中內埋結構包含至少一電子元件以及設置於電子元件上的多個接墊,其中接墊暴露於內埋結構的一第一表面;移除內埋元件線路基板的一部分,以形成多個凹槽,且接墊分別暴露於凹槽的一第一底面;以及在形成凹槽之後,在第一底面的每一者上,沉積一焊接材料,且焊接材料直接接觸接墊。其中焊接材料的一界面遠離接墊,而此界面不凸出於內埋元件線路基板的一第二表面。The present invention also provides a method for manufacturing an electronic package module, including providing an initial circuit substrate; in the initial circuit substrate, an embedded structure is arranged to form an embedded component circuit substrate, wherein the embedded structure includes at least one electronic component and a plurality of pads arranged on the electronic component, wherein the pads are exposed to a first surface of the embedded structure; a portion of the embedded component circuit substrate is removed to form a plurality of grooves, and the pads are respectively exposed to a first bottom surface of the grooves; and after the grooves are formed, a welding material is deposited on each of the first bottom surfaces, and the welding material directly contacts the pads. An interface of the welding material is far away from the pad, and the interface does not protrude from a second surface of the embedded component circuit substrate.
在本發明的至少一實施例中,其中在初始線路基板中設置內埋結構,包含移除部分初始線路基板,以形成一開口,其中開口連通初始線路基板的相對兩側;在形成開口之後,在初始線路基板上,設置一覆蓋膜,且覆蓋膜完全覆蓋開口的一端;在覆蓋膜上,設置電子元件,其中設置於電子元件上的接墊位於覆蓋膜以及電子元件之間,且接墊直接接觸覆蓋膜;在設置電子元件之後,在開口中設置一密封材料,其中密封材料包覆電子元件;以及在填入密封材料之後,移除覆蓋膜。In at least one embodiment of the present invention, an embedded structure is provided in an initial circuit substrate, including removing a portion of the initial circuit substrate to form an opening, wherein the opening connects two opposite sides of the initial circuit substrate; after the opening is formed, a covering film is provided on the initial circuit substrate, and the covering film completely covers one end of the opening; an electronic component is provided on the covering film, wherein a pad provided on the electronic component is located between the covering film and the electronic component, and the pad directly contacts the covering film; after the electronic component is provided, a sealing material is provided in the opening, wherein the sealing material covers the electronic component; and after the sealing material is filled, the covering film is removed.
在本發明的至少一實施例中,上述方法還包含在沉積焊接材料之前,在凹槽的第一底面上沉積一導電層,其中導電層直接接觸接墊。In at least one embodiment of the present invention, the method further comprises depositing a conductive layer on the first bottom surface of the groove before depositing the solder material, wherein the conductive layer directly contacts the pad.
在本發明的至少一實施例中,其中形成內埋元件線路基板還包含在內埋結構的第一表面上,設置一介電層;以及在介電層上設置一金屬層,其中介電層位於金屬層以及內埋結構之間。In at least one embodiment of the present invention, forming the embedded component circuit substrate further includes disposing a dielectric layer on the first surface of the embedded structure; and disposing a metal layer on the dielectric layer, wherein the dielectric layer is located between the metal layer and the embedded structure.
在本發明的至少一實施例中,上述方法還包含在形成內埋元件線路基板之後,移除金屬層的多個第一部分,以形成多個初始凹槽,其中第一部分分別與接墊重疊,且初始凹槽的每一者的第二底面暴露介電層;以及形成初始凹槽之後,移除介電層的多個第二部分,其中第二部分分別與第一部分重疊。In at least one embodiment of the present invention, the method further includes removing multiple first portions of the metal layer after forming the embedded component circuit substrate to form multiple initial grooves, wherein the first portions overlap with the pads respectively, and the second bottom surface of each of the initial grooves exposes the dielectric layer; and after forming the initial grooves, removing multiple second portions of the dielectric layer, wherein the second portions overlap with the first portions respectively.
在本發明的至少一實施例中,上述方法還包含,在沉積焊接材料之後,移除金屬層。In at least one embodiment of the present invention, the method further includes removing the metal layer after depositing the solder material.
在本發明的至少一實施例中,上述方法還包含,在沉積焊接材料之後,通過焊接材料,在內埋元件線路基板上設置一線路基板,且此焊接材料電性連接內埋元件線路基板以及線路基板。In at least one embodiment of the present invention, the method further comprises, after depositing the soldering material, disposing a circuit substrate on the embedded component circuit substrate by means of the soldering material, and the soldering material electrically connects the embedded component circuit substrate and the circuit substrate.
基於上述,通過將焊接材料設置於凹槽中,並且使焊接材料不凸出於凹槽,可以提升焊接對位的精準度。此外,這些凹槽還能阻隔相鄰的焊接材料,避免焊接材料互相接觸而發生短路,進而改善電子封裝模組的良率。Based on the above, by placing the welding material in the groove and making the welding material not protrude from the groove, the accuracy of welding alignment can be improved. In addition, these grooves can also block adjacent welding materials to prevent the welding materials from contacting each other and causing short circuits, thereby improving the yield of electronic packaging modules.
本發明將以下列實施例進行詳細說明。須注意的是, 以下本發明實施例的敘述在此僅用於舉例說明, 並非旨在詳盡無遺地揭示所有實施態樣或是限制本發明的具體實施態樣。舉例而言,敘述中之「第一特徵形成於第二特徵上」包含多種實施方式,其中涵蓋第一特徵與第二特徵直接接觸,亦涵蓋額外的特徵形成於第一特徵與第二特徵之間而使兩者不直接接觸。此外,圖式及說明書中所採用的相同元件符號會盡可能表示相同或相似的元件。The present invention will be described in detail with the following embodiments. It should be noted that the following description of the embodiments of the present invention is only used for illustration and is not intended to disclose all embodiments in detail or to limit the specific embodiments of the present invention. For example, the description of "a first feature formed on a second feature" includes a variety of implementations, including the first feature and the second feature directly contacting each other, and also including additional features formed between the first feature and the second feature so that the two do not directly contact each other. In addition, the same component symbols used in the drawings and the specification will represent the same or similar components as much as possible.
空間相對的詞彙,例如「下層的」、「低於」、「下方」、「高於」、「上方」等相關詞彙,於此用以簡單描述如圖所示之元件或特徵與另一元件或特徵的關係。這些空間相對的詞彙除了圖中所描繪的轉向之外,也涵蓋在使用或操作裝置時的不同的轉向。此外,當元件可旋轉(旋轉90度或其他角度)時,在此使用之空間相對的描述語也可作對應的解讀。Spatially relative terms such as "inferior," "lower than," "below," "above," and related terms are used herein to simply describe the relationship of an element or feature as shown in the figure to another element or feature. These spatially relative terms cover different orientations when the device is in use or operating in addition to the orientation depicted in the figure. In addition, when the element is rotatable (rotated 90 degrees or other angles), the spatially relative descriptors used herein can also be interpreted accordingly.
在以下的內文中,為了清楚呈現本案的技術特徵,圖式中的元件(例如層、膜、基板以及區域等)的尺寸(例如長度、寬度、厚度與深度)會以不等比例的方式放大。因此,下文實施例的說明與解釋不受限於圖式中的元件所呈現的尺寸與形狀,而應涵蓋如實際製程及/或公差所導致的尺寸、形狀以及兩者的偏差。例如,圖式所示的平坦表面可以具有粗糙及/或非線性的特徵,而圖式所示的銳角可以用鈍角替換。所以,本案圖式所呈示的元件主要是用於示意,並非旨在精準地描繪出元件的實際形狀,也非用於限制本案的申請專利範圍。In the following text, in order to clearly present the technical features of the present invention, the dimensions (e.g., length, width, thickness, and depth) of the components (e.g., layers, films, substrates, and regions, etc.) in the drawings will be enlarged in unequal proportions. Therefore, the description and explanation of the embodiments below are not limited to the dimensions and shapes presented by the components in the drawings, but should cover the dimensions, shapes, and deviations therefrom caused by actual processes and/or tolerances. For example, the flat surface shown in the drawings may have rough and/or nonlinear features, and the sharp corners shown in the drawings may be replaced with blunt corners. Therefore, the components presented in the drawings of the present invention are mainly for illustration, and are not intended to accurately depict the actual shapes of the components, nor are they intended to limit the scope of the patent application of the present invention.
更甚者,本案內容中所出現的「約」、「近似」或「實質上」等這類用字不僅涵蓋明確記載的數值與數值範圍,而且也涵蓋發明所屬技術領域中具有通常知識者所能理解的可允許偏差範圍,其中此偏差範圍可由測量時所產生的誤差來決定,而此誤差例如是起因於測量系統或製程條件兩者的限制。此外,「約」可表示在上述數值的一個或多個標準偏差內,例如±30%、±20%、±10%或±5%內。本案文中所出現的「約」、「近似」或「實質上」等這類用字可依光學性質、蝕刻性質、機械性質或其他性質來選擇可以接受的偏差範圍或標準偏差,並非單以一個標準偏差來套用以上光學性質、蝕刻性質、機械性質以及其他性質等所有性質。Furthermore, the words "approximately", "approximately" or "substantially" used in the present case not only cover the numerical values and numerical ranges clearly recorded, but also cover the permissible deviation ranges that can be understood by a person of ordinary skill in the art to which the invention belongs, wherein the deviation range can be determined by the error generated during measurement, and the error is caused by, for example, the limitation of the measurement system or the process conditions. In addition, "approximately" can mean within one or more standard deviations of the above numerical values, such as ±30%, ±20%, ±10% or ±5%. The words "approximately", "approximately" or "substantially" used in this text may select an acceptable range of deviation or standard deviation according to the optical, etching, mechanical or other properties, and do not apply a single standard deviation to all the above optical, etching, mechanical and other properties.
本發明揭露一種電子封裝模組的製造方法,此製造方法可以包含如圖1A至圖1G所示的數個步驟。請參考圖1A,在本實施例中,首先提供初始線路基板110。在本發明的各種實施例中,初始線路基板110可以是一般的銅箔基板(Copper Clad Laminate,CCL)。在本實施例中,初始線路基板110是一個包含兩層金屬層(金屬層104a以及金屬層104b)的雙層銅箔基板,其中金屬層104a以及金屬層104b分別位於絕緣層102的相對兩側。The present invention discloses a method for manufacturing an electronic package module, and the manufacturing method may include several steps as shown in FIG. 1A to FIG. 1G. Referring to FIG. 1A, in the present embodiment, an initial circuit substrate 110 is first provided. In various embodiments of the present invention, the initial circuit substrate 110 may be a general copper clad laminate (CCL). In the present embodiment, the initial circuit substrate 110 is a double-layer copper clad laminate including two metal layers (metal layer 104a and metal layer 104b), wherein the metal layer 104a and the metal layer 104b are respectively located on opposite sides of the insulating layer 102.
請參考圖1B,在初始線路基板110中,設置內埋結構120。此內埋結構120包含至少一個電子元件122以及設置於電子元件122上的多個接墊124,其中接墊124暴露於內埋結構120的表面120s。在本實施例中,設置內埋結構120的方法請參考圖2A至圖2C的步驟。如圖2A所示,移除部分初始線路基板110,以形成開口103,此開口103連通初始線路基板110的相對兩側。Referring to FIG. 1B , an embedded structure 120 is disposed in the initial circuit substrate 110. The embedded structure 120 includes at least one electronic component 122 and a plurality of pads 124 disposed on the electronic component 122, wherein the pads 124 are exposed on the surface 120s of the embedded structure 120. In this embodiment, the method for disposing the embedded structure 120 is referred to the steps of FIG. 2A to FIG. 2C . As shown in FIG. 2A , a portion of the initial circuit substrate 110 is removed to form an opening 103, and the opening 103 connects two opposite sides of the initial circuit substrate 110.
請參考圖2B,在形成開口103之後,在初始線路基板110上(例如初始線路基板110的表面110s上)設置覆蓋膜105,且覆蓋膜105完全覆蓋開口103的一端面103e(甚至可以超過開口103的端面103e)。接著,在此覆蓋膜105上,設置電子元件122。設置於電子元件122上的接墊124位於覆蓋膜105以及電子元件122之間,且接墊124直接接觸覆蓋膜105。覆蓋膜105可以是包含高分子材料的膠膜(例如聚醯亞胺膠帶,Polyimide tape)。Referring to FIG. 2B , after the opening 103 is formed, a cover film 105 is disposed on the initial circuit substrate 110 (e.g., on the surface 110s of the initial circuit substrate 110), and the cover film 105 completely covers one end surface 103e of the opening 103 (and may even exceed the end surface 103e of the opening 103). Then, an electronic component 122 is disposed on the cover film 105. The pad 124 disposed on the electronic component 122 is located between the cover film 105 and the electronic component 122, and the pad 124 directly contacts the cover film 105. The cover film 105 may be a film containing a polymer material (e.g., a polyimide tape).
在設置電子元件122之後,在開口103中設置密封材料126。如圖2C所示,密封材料126包覆電子元件122。在本實施例中,除了電子元件122與接墊124接觸的區域之外,密封材料126可以完全包覆電子元件122。密封材料126可以包含有機樹脂(如環氧樹脂)等絕緣材料或其相似物,並且可以通過例如烘烤、乾燥或者UV光照等方式,使密封材料126硬化而成形。此外,在設置密封材料126之後,移除覆蓋膜105。After the electronic element 122 is disposed, a sealing material 126 is disposed in the opening 103. As shown in FIG. 2C , the sealing material 126 covers the electronic element 122. In this embodiment, the sealing material 126 may completely cover the electronic element 122 except for the area where the electronic element 122 contacts the pad 124. The sealing material 126 may include an insulating material such as an organic resin (such as an epoxy resin) or the like, and the sealing material 126 may be hardened and formed by, for example, baking, drying, or UV irradiation. In addition, after the sealing material 126 is disposed, the cover film 105 is removed.
請回到圖1B,在本實施例中,還可以將金屬層104a以及金屬層104b圖案化,以形成線路層106a及線路層106b。在本發明的其他實施例中,不限於一定要形成線路層106a及線路層106b,即此圖案化步驟可以省略。此外,形成線路層106a及線路層106b的步驟不限於在設置內埋結構120之後,也可以是在設置內埋結構120之前。內埋元件線路基板130還可以包含多個導電通孔(未繪示),這些導電通孔可電性連接線路層106a以及線路層106b。至此,在本發明的部分實施例中,已足以形成一內埋元件線路基板130。Please return to FIG. 1B. In this embodiment, the metal layer 104a and the metal layer 104b may be patterned to form the circuit layer 106a and the circuit layer 106b. In other embodiments of the present invention, it is not limited to forming the circuit layer 106a and the circuit layer 106b, that is, the patterning step may be omitted. In addition, the step of forming the circuit layer 106a and the circuit layer 106b is not limited to after the embedded structure 120 is provided, but may be before the embedded structure 120 is provided. The embedded component circuit substrate 130 may also include a plurality of conductive vias (not shown), which may electrically connect the circuit layer 106a and the circuit layer 106b. At this point, in some embodiments of the present invention, it is sufficient to form an embedded device circuit substrate 130.
然而,本發明不限於此,請參考圖1C,在本實施例中,形成內埋元件線路基板130的步驟還包含:在內埋結構120的表面120f上,設置介電層132a,並且在介電層132a上設置金屬層134a,而介電層132a位於金屬層134a以及內埋結構120之間。另一方面,在內埋結構120的表面120s上,設置介電層132b,並且在介電層132b上設置金屬層134b,而介電層132b位於金屬層134b以及內埋結構120之間。介電層132a以及介電層132b的材料可以是包含玻璃纖維以及樹脂的複合材料,例如預浸膠片(Prepreg),或者包含其他相似的絕緣材料。However, the present invention is not limited thereto. Referring to FIG. 1C , in the present embodiment, the step of forming the embedded component circuit substrate 130 further includes: a dielectric layer 132a is disposed on the surface 120f of the embedded structure 120, and a metal layer 134a is disposed on the dielectric layer 132a, and the dielectric layer 132a is located between the metal layer 134a and the embedded structure 120. On the other hand, a dielectric layer 132b is disposed on the surface 120s of the embedded structure 120, and a metal layer 134b is disposed on the dielectric layer 132b, and the dielectric layer 132b is located between the metal layer 134b and the embedded structure 120. The material of the dielectric layer 132a and the dielectric layer 132b may be a composite material including glass fiber and resin, such as prepreg, or other similar insulating materials.
請參考圖1D以及圖1E,移除內埋元件線路基板130的一部分,以形成多個凹槽140。上述每一個接墊124分別暴露於凹槽140的底面140d,換言之,一個凹槽140的底面140d會暴露一個接墊124。在本實施例中,形成凹槽140的步驟包含:如圖1D所示,可以通過微影與蝕刻的方式,移除金屬層134b的多個部分134p,以形成多個初始凹槽140’。由於這些被移除的部分134p分別與接墊124重疊,故初始凹槽140’分別與接墊124重疊,且每一個初始凹槽140’的底面(未標示)會暴露介電層132b。1D and 1E , a portion of the embedded component circuit substrate 130 is removed to form a plurality of grooves 140. Each of the pads 124 is exposed at the bottom surface 140d of the groove 140. In other words, the bottom surface 140d of a groove 140 exposes a pad 124. In this embodiment, the step of forming the groove 140 includes: as shown in FIG1D , a plurality of portions 134p of the metal layer 134b can be removed by lithography and etching to form a plurality of initial grooves 140'. Since these removed portions 134p overlap with the pads 124, the initial grooves 140' overlap with the pads 124, and the bottom surface (not shown) of each initial groove 140' exposes the dielectric layer 132b.
接著,通過雷射鑽孔或外型切割(routing)的方式移除介電層132b的多個部分132p,以形成多個凹槽140。請參考圖1E,這些被移除的部分132p分別與部分134p重疊,且介電層132b的部分132p實質上是完全重疊於金屬層134b部分134p。值得一提的是,雖然在本實施例中,凹槽140的底面140d完全暴露接墊124,但本發明不限於此。在本發明的其他實施例中,凹槽140的底面140d也可以僅暴露接墊124的一部分。Then, multiple portions 132p of the dielectric layer 132b are removed by laser drilling or routing to form multiple grooves 140. Referring to FIG. 1E , these removed portions 132p overlap with portions 134p respectively, and the portion 132p of the dielectric layer 132b substantially completely overlaps the portion 134p of the metal layer 134b. It is worth mentioning that, although in this embodiment, the bottom surface 140d of the groove 140 completely exposes the pad 124, the present invention is not limited thereto. In other embodiments of the present invention, the bottom surface 140d of the groove 140 may also only expose a portion of the pad 124.
請參考圖1F,在形成凹槽140之後,在每一個凹槽140的底面140d上,通過例如電鍍的方式沉積焊接材料160。焊接材料160直接接觸接墊124,以使焊接材料160可以電性連接電子元件122。焊接材料160可以包含例如錫膏、銅膏或者銀膏等用於焊接的材料。特別一提的是,焊接材料160的界面160i遠離接墊124,而此界面160i不凸出於內埋元件線路基板130的表面130s(此時的表面130s等同於金屬層134b的表面)。換言之,焊接材料160的厚度T不超過凹槽140的深度D。Please refer to FIG. 1F . After the grooves 140 are formed, a soldering material 160 is deposited on the bottom surface 140d of each groove 140 by, for example, electroplating. The soldering material 160 directly contacts the pad 124 so that the soldering material 160 can be electrically connected to the electronic component 122. The soldering material 160 can include materials used for soldering, such as solder paste, copper paste, or silver paste. In particular, the interface 160i of the soldering material 160 is far away from the pad 124, and the interface 160i does not protrude from the surface 130s of the embedded component circuit substrate 130 (the surface 130s at this time is equivalent to the surface of the metal layer 134b). In other words, the thickness T of the soldering material 160 does not exceed the depth D of the groove 140.
在本實施例中,沉積焊接材料160之後,可以通過例如化學機械研磨(Chemical-Mechanical Polishing; CMP)的方式,移除金屬層134b。應注意到,移除金屬層134b會改變凹槽140的深度D,使得凹槽140的深度D減少。即便如此,焊接材料160的界面160i仍不凸出於內埋元件線路基板130的表面130s(此時的表面130s等同於介電層132b的表面)。In this embodiment, after depositing the solder material 160, the metal layer 134b can be removed by, for example, chemical-mechanical polishing (CMP). It should be noted that removing the metal layer 134b will change the depth D of the groove 140, so that the depth D of the groove 140 is reduced. Even so, the interface 160i of the solder material 160 still does not protrude from the surface 130s of the embedded component circuit substrate 130 (the surface 130s at this time is equivalent to the surface of the dielectric layer 132b).
請參考圖3A至圖3B,在本發明的另一實施例中,在沉積焊接材料160之前,可以在凹槽140的底面140d上,沉積導電層180,而導電層180直接接觸接墊124。導電層180的材料可以包含例如銅或類似的合金材料,且導電層180的材料可以與接墊124的材料相同。3A to 3B , in another embodiment of the present invention, before depositing the solder material 160, a conductive layer 180 may be deposited on the bottom surface 140 d of the groove 140, and the conductive layer 180 directly contacts the pad 124. The material of the conductive layer 180 may include, for example, copper or a similar alloy material, and the material of the conductive layer 180 may be the same as that of the pad 124.
圖3A至圖3B為上述沉積導電層180的步驟。請參考圖3A,本實施例透過電鍍的方式,在凹槽140的底面140d、凹槽140的側壁140w以及金屬層134b的表面(未標示)上,沉積一層初始導電層180’。接著,如圖3B所示,在初始導電層180’上設置例如乾膜式光阻的光阻材料190,並且通過例如微影與蝕刻的方式,對光阻材料190進行圖案化。在圖案化光阻材料190之後,通過電鍍的方式,使位於凹槽140底面140d的部分初始導電層180’增厚(即位於接墊124上的部分初始導電層180’),以形成導電層180。3A to 3B show the steps of depositing the conductive layer 180. Referring to FIG. 3A, in this embodiment, an initial conductive layer 180' is deposited on the bottom surface 140d of the groove 140, the sidewall 140w of the groove 140, and the surface (not shown) of the metal layer 134b by electroplating. Then, as shown in FIG. 3B, a photoresist material 190 such as a dry film photoresist is disposed on the initial conductive layer 180', and the photoresist material 190 is patterned by, for example, lithography and etching. After patterning the photoresist material 190, the portion of the initial conductive layer 180' located on the bottom surface 140d of the groove 140 (i.e., the portion of the initial conductive layer 180' located on the pad 124) is thickened by electroplating to form a conductive layer 180.
請參考圖3C,在本實施例中,形成導電層180之後,將光阻材料190移除,並且在導電層180上沉積多個焊接材料160,且這些焊接材料160分別位於凹槽140中。由於導電層180電性連接接墊124,位於凹槽140中的導電層180實質上可以視為接墊124的延伸。進一步而言,導電層180的設置可以實質上增加接墊124的厚度,使接墊124延伸而凸出於內埋結構120的表面120s。3C , in this embodiment, after the conductive layer 180 is formed, the photoresist material 190 is removed, and a plurality of soldering materials 160 are deposited on the conductive layer 180, and the soldering materials 160 are respectively located in the grooves 140. Since the conductive layer 180 is electrically connected to the pad 124, the conductive layer 180 located in the groove 140 can be substantially regarded as an extension of the pad 124. Furthermore, the provision of the conductive layer 180 can substantially increase the thickness of the pad 124, so that the pad 124 extends and protrudes from the surface 120s of the buried structure 120.
請回到圖1G的實施例,在沉積焊接材料160之後,通過這些焊接材料160,在內埋元件線路基板130上設置線路基板150。焊接材料160位於內埋元件線路基板130以及線路基板150之間,並且電性連接內埋元件線路基板130以及線路基板150。Returning to the embodiment of FIG. 1G , after the solder material 160 is deposited, the circuit substrate 150 is disposed on the embedded component circuit substrate 130 through the solder material 160 . The solder material 160 is located between the embedded component circuit substrate 130 and the circuit substrate 150 , and electrically connects the embedded component circuit substrate 130 and the circuit substrate 150 .
值得一提的是,線路基板150上包含多個接墊154。在內埋元件線路基板130上設置線路基板150時,各個接墊154分別對應各個凹槽140而設置。舉例而言,一個接墊154會設置於一個凹槽140中,並且與凹槽140中的焊接材料160直接接觸。焊接材料160位於接墊124以及接墊154之間,並且分別通過接墊124與接墊154而電性連接內埋元件線路基板130以及線路基板150。It is worth mentioning that the circuit substrate 150 includes a plurality of pads 154. When the circuit substrate 150 is disposed on the embedded component circuit substrate 130, each pad 154 is disposed corresponding to each groove 140. For example, one pad 154 is disposed in one groove 140 and directly contacts the soldering material 160 in the groove 140. The soldering material 160 is located between the pad 124 and the pad 154, and electrically connects the embedded component circuit substrate 130 and the circuit substrate 150 through the pad 124 and the pad 154, respectively.
通過上述圖1A至圖1G的各個步驟,可以形成如圖4所示的電子封裝模組40。電子封裝模組40包含內埋元件線路基板130、位於內埋元件線路基板130的表面130s的多個凹槽140以及多個焊接材料160。Through the steps of FIG. 1A to FIG. 1G , an electronic package module 40 as shown in FIG. 4 can be formed. The electronic package module 40 includes an embedded component circuit substrate 130 , a plurality of grooves 140 located on a surface 130s of the embedded component circuit substrate 130 , and a plurality of solder materials 160 .
請參考圖4,內埋元件線路基板130包含至少一個電子元件122、多個接墊124以及密封材料126。接墊124位於電子元件122上,並且與電子元件122電性連接。本發明的電子元件122可以是已封裝的晶片(chip)或者未經封裝的晶粒(die),而接墊124可以包含金屬材料,例如銅、鎳等。4, the embedded component circuit substrate 130 includes at least one electronic component 122, a plurality of pads 124, and a sealing material 126. The pads 124 are located on the electronic component 122 and are electrically connected to the electronic component 122. The electronic component 122 of the present invention may be a packaged chip or an unpackaged die, and the pads 124 may include metal materials, such as copper, nickel, etc.
密封材料126包覆電子元件122,並且暴露接墊124。換言之,接墊124不被密封材料126完全包覆。在本實施例中,內埋元件線路基板130還包含介電層132a以及介電層132b,其中介電層132b位於內埋元件線路基板130的表面130s以及密封材料126之間。在本實施例中,相鄰兩個接墊124之間的距離小於70µm,但本發明不限於此,相鄰兩個接墊124之間的距離也可以大於或等於70µm。The sealing material 126 covers the electronic component 122 and exposes the pad 124. In other words, the pad 124 is not completely covered by the sealing material 126. In this embodiment, the embedded component circuit substrate 130 further includes a dielectric layer 132a and a dielectric layer 132b, wherein the dielectric layer 132b is located between the surface 130s of the embedded component circuit substrate 130 and the sealing material 126. In this embodiment, the distance between two adjacent pads 124 is less than 70μm, but the present invention is not limited thereto, and the distance between two adjacent pads 124 may also be greater than or equal to 70μm.
電子封裝模組40的每一個凹槽140具有一個底面140d,而這些底面140d分別暴露接墊124。具體而言,凹槽140是從內埋元件線路基板130的表面130s經過介電層132b而延伸至接墊124,並且暴露出接墊124的一表面(未標示)。值得一提的是,雖然從圖4的剖視圖來看,焊接材料160完全直接接觸凹槽140的側壁140w,但實際上本發明不限於此。請參考圖5,在沿圖4線段A-A所截的剖視圖中,焊接材料160並未完全覆蓋接墊124,且各焊接材料160與接墊124重疊的範圍及位置可以不相同。Each groove 140 of the electronic package module 40 has a bottom surface 140d, and these bottom surfaces 140d expose the pads 124 respectively. Specifically, the groove 140 extends from the surface 130s of the embedded component circuit substrate 130 through the dielectric layer 132b to the pad 124, and exposes a surface (not marked) of the pad 124. It is worth mentioning that although from the cross-sectional view of Figure 4, the welding material 160 is completely and directly in contact with the side wall 140w of the groove 140, in fact, the present invention is not limited to this. Please refer to Figure 5. In the cross-sectional view cut along the line segment A-A of Figure 4, the welding material 160 does not completely cover the pad 124, and the overlapping range and position of each welding material 160 and the pad 124 may be different.
電子封裝模組40的焊接材料160分別位於底面140d上,並且直接接觸接墊124。焊接材料160包含遠離接墊124的界面160i,而此界面160i不凸出於內埋元件線路基板130的表面130s。舉例而言,在本實施例中,焊接材料160的界面160i位於凹槽140中,並且凹陷於內埋元件線路基板130的表面130s,但本發明不限於此。在本發明的其他實施例中,焊接材料160的界面160i與內埋元件線路基板130的表面130s齊平。The soldering material 160 of the electronic package module 40 is respectively located on the bottom surface 140d and directly contacts the pad 124. The soldering material 160 includes an interface 160i away from the pad 124, and the interface 160i does not protrude from the surface 130s of the embedded component circuit substrate 130. For example, in this embodiment, the interface 160i of the soldering material 160 is located in the groove 140 and is recessed in the surface 130s of the embedded component circuit substrate 130, but the present invention is not limited thereto. In other embodiments of the present invention, the interface 160i of the soldering material 160 is flush with the surface 130s of the embedded component circuit substrate 130.
電子封裝模組40還包含線路基板150,此線路基板150設置於焊接材料160上。如圖4所示,焊接材料160位於內埋元件線路基板130以及線路基板150之間,並且電性連接內埋元件線路基板130以及線路基板150。線路基板150還包含多個接墊154,這些接墊154位於線路基板150的表面150s上,並且突出於線路基板150的表面150s。接墊154分別設置於焊接材料160上,舉例而言,一個焊接材料160位於一個接墊124以及一個接墊154之間,並且電性連接接墊124以及接墊154。The electronic package module 40 further includes a circuit substrate 150, which is disposed on a soldering material 160. As shown in FIG. 4 , the soldering material 160 is located between the embedded component circuit substrate 130 and the circuit substrate 150, and electrically connects the embedded component circuit substrate 130 and the circuit substrate 150. The circuit substrate 150 further includes a plurality of pads 154, which are located on a surface 150s of the circuit substrate 150 and protrude from the surface 150s of the circuit substrate 150. The pads 154 are respectively disposed on the soldering material 160. For example, one soldering material 160 is located between one pad 124 and one pad 154, and electrically connects the pad 124 and the pad 154.
雖然未繪示於圖4中,但在本發明的其他實施例中,線路基板150還可以包含防焊層(solder mask,未繪示)。舉例而言,防焊層可以部分覆蓋線路基板150的表面150s,並且暴露出接墊154。另一方面,線路基板150還包含多個導電通孔(未繪示),而這些導電通孔位於線路基板150的各個線路層(未標示)之間,並且電性連接這些線路層。Although not shown in FIG. 4 , in other embodiments of the present invention, the circuit substrate 150 may further include a solder mask (not shown). For example, the solder mask may partially cover the surface 150s of the circuit substrate 150 and expose the pad 154. On the other hand, the circuit substrate 150 further includes a plurality of conductive vias (not shown), and these conductive vias are located between each circuit layer (not shown) of the circuit substrate 150 and electrically connect these circuit layers.
除此之外,雖然在圖4中,內埋元件線路基板130包含兩層線路層(線路層106a以及線路層106b)以及兩層金屬層(金屬層134a以及金屬層134b),但本發明中線路層以及金屬層的數量不限於此。換句話而言,內埋元件線路基板130的線路層以及金屬層分別可以是一層以上的任意數量,例如四層。In addition, although in FIG. 4 , the embedded component circuit substrate 130 includes two circuit layers (circuit layer 106a and circuit layer 106b) and two metal layers (metal layer 134a and metal layer 134b), the number of circuit layers and metal layers in the present invention is not limited thereto. In other words, the number of circuit layers and metal layers of the embedded component circuit substrate 130 can be any number of more than one layer, for example, four layers.
綜上所述,當焊接材料在焊接製程中受熱熔融時,位於各個接墊上方的凹槽會限制焊接材料的流動,以避免各個焊接材料互相接觸而造成短路。除此之外,由於焊接材料是設置於凹槽內,並且不凸出於凹槽。如此一來,可以提升線路基板上的接墊與焊接材料之間的對位精準度,以避免焊接材料與接墊之間接觸不良的情形,進而提升電子封裝模組的良率。In summary, when the soldering material is heated and melted during the soldering process, the grooves above each pad will limit the flow of the soldering material to prevent each soldering material from contacting each other and causing a short circuit. In addition, since the soldering material is placed in the groove and does not protrude from the groove, the alignment accuracy between the pad on the circuit substrate and the soldering material can be improved to avoid poor contact between the soldering material and the pad, thereby improving the yield of the electronic packaging module.
雖然本發明之實施例已揭露如上,然其並非用以限定本發明之實施例,任何所屬技術領域中具有通常知識者,在不脫離本發明之實施例的精神和範圍內,當可作些許的更動與潤飾,故本發明之實施例的保護範圍當視後附的申請專利範圍所界定者為準。Although the embodiments of the present invention have been disclosed above, they are not intended to limit the embodiments of the present invention. Any person with ordinary knowledge in the relevant technical field may make some changes and modifications without departing from the spirit and scope of the embodiments of the present invention. Therefore, the protection scope of the embodiments of the present invention shall be defined by the scope of the attached patent application.
102:絕緣層 103:開口 103e:端面 104a, 104b, 134a, 134b:金屬層 105:覆蓋膜 106a, 106b:線路層 110:初始線路基板 120:內埋結構 110s, 120s, 120f, 130s, 150s:表面 122:電子元件 124, 154:接墊 126:密封材料 130:內埋元件線路基板 132a, 132b:介電層 132p, 134p:部分 140:凹槽 140’:初始凹槽 140d:底面 140w:側壁 150:線路基板 160:焊接材料 160i:界面 180:導電層 180’:初始導電層 190:光阻材料 40:電子封裝模組 A-A:線段 T:厚度 D:深度102: insulating layer 103: opening 103e: end face 104a, 104b, 134a, 134b: metal layer 105: cover film 106a, 106b: circuit layer 110: initial circuit substrate 120: embedded structure 110s, 120s, 120f, 130s, 150s: surface 122: electronic component 124, 154: pad 126: sealing material 130: embedded component circuit substrate 132a, 132b: dielectric layer 132p, 134p: part 140: groove 140': initial groove 140d: bottom surface 140w: side wall 150: circuit substrate 160: welding material 160i: interface 180: conductive layer 180’: initial conductive layer 190: photoresist material 40: electronic packaging module A-A: line segment T: thickness D: depth
從以下詳細敘述並搭配圖式檢閱,可理解本發明的態樣。應注意,多種特徵並未以產業上實務標準的比例繪製。事實上,為了討論上的清楚易懂,各種特徵的尺寸可以任意地增加或減少。 圖1A至圖1G繪示本發明一實施例的電子封裝模組製造方法的剖視圖。 圖2A至圖2C繪示本發明一實施例的電子封裝模組製造方法的剖視圖。 圖3A至圖3C繪示本發明另一實施例的電子封裝模組製造方法的剖視圖。 圖4繪示本發明一實施例的電子封裝模組的剖視圖。 圖5繪示本發明一實施例的電子封裝模組沿著圖4的線段A-A的剖視圖。 The present invention can be understood from the following detailed description and the accompanying drawings. It should be noted that various features are not drawn in proportion to industry practice standards. In fact, the sizes of various features can be arbitrarily increased or decreased for the sake of clarity of discussion. Figures 1A to 1G show cross-sectional views of a method for manufacturing an electronic package module according to an embodiment of the present invention. Figures 2A to 2C show cross-sectional views of a method for manufacturing an electronic package module according to an embodiment of the present invention. Figures 3A to 3C show cross-sectional views of a method for manufacturing an electronic package module according to another embodiment of the present invention. Figure 4 shows a cross-sectional view of an electronic package module according to an embodiment of the present invention. Figure 5 shows a cross-sectional view of an electronic package module according to an embodiment of the present invention along line segment A-A of Figure 4.
國內寄存資訊(請依寄存機構、日期、號碼順序註記) 無 國外寄存資訊(請依寄存國家、機構、日期、號碼順序註記) 無 Domestic storage information (please note in the order of storage institution, date, and number) None Foreign storage information (please note in the order of storage country, institution, date, and number) None
106a,106b:線路層 106a,106b: Circuit layer
130s,150s:表面 130s,150s:Surface
122:電子元件 122: Electronic components
124,154:接墊 124,154:Pad
126:密封材料 126: Sealing material
130:內埋元件線路基板 130: Embedded component circuit substrate
132a,132b:介電層 132a, 132b: dielectric layer
134a:金屬層 134a:Metal layer
140:凹槽 140: Groove
140d:底面 140d: bottom surface
150:線路基板 150: Circuit board
160:焊接材料 160: Welding materials
160i:界面 160i: Interface
40:電子封裝模組 40: Electronic packaging module
A-A:線段 A-A: Line segment
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Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI331808B (en) * | 2007-02-14 | 2010-10-11 | Xintec Inc | Integrated circuit package having high conductive area and method for fabricating thereof |
| TW201351584A (en) * | 2012-06-12 | 2013-12-16 | 矽品精密工業股份有限公司 | Package substrate plate structure, package substrate, semiconductor package and manufacturing method thereof |
| US20150001725A1 (en) * | 2013-06-26 | 2015-01-01 | Taiwan Semiconductor Manufacturing Co., Ltd. | Bonding structure and method for forming the same |
| TW201508875A (en) * | 2013-08-19 | 2015-03-01 | 力成科技股份有限公司 | Substrate-free package structure of dicing fin in heat sink and manufacturing method thereof |
| TW201810551A (en) * | 2016-06-16 | 2018-03-16 | 思鷺科技股份有限公司 | Package structure |
| TW201836968A (en) * | 2017-03-28 | 2018-10-16 | 思鷺科技股份有限公司 | Package structure |
| TW202131479A (en) * | 2018-03-23 | 2021-08-16 | 愛爾蘭商亞德諾半導體國際無限公司 | Semiconductor packages and apparatus having the same |
| US20220181299A1 (en) * | 2020-12-08 | 2022-06-09 | Samsung Electronics Co., Ltd. | Semiconductor package and method of manufacturing the semiconductor package |
| US20220359439A1 (en) * | 2021-05-06 | 2022-11-10 | Samsung Electronics Co., Ltd. | Semiconductor package and method of manufacturing the semiconductor package |
| US20230154910A1 (en) * | 2021-11-17 | 2023-05-18 | Samsung Electronics Co., Ltd. | Semiconductor chip, semiconductor package, and method of manufacturing the same |
-
2023
- 2023-06-29 CN CN202310781581.6A patent/CN119230507A/en active Pending
- 2023-07-04 TW TW112124975A patent/TWI852665B/en active
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI331808B (en) * | 2007-02-14 | 2010-10-11 | Xintec Inc | Integrated circuit package having high conductive area and method for fabricating thereof |
| TW201351584A (en) * | 2012-06-12 | 2013-12-16 | 矽品精密工業股份有限公司 | Package substrate plate structure, package substrate, semiconductor package and manufacturing method thereof |
| US20150001725A1 (en) * | 2013-06-26 | 2015-01-01 | Taiwan Semiconductor Manufacturing Co., Ltd. | Bonding structure and method for forming the same |
| TW201508875A (en) * | 2013-08-19 | 2015-03-01 | 力成科技股份有限公司 | Substrate-free package structure of dicing fin in heat sink and manufacturing method thereof |
| TW201810551A (en) * | 2016-06-16 | 2018-03-16 | 思鷺科技股份有限公司 | Package structure |
| TW201836968A (en) * | 2017-03-28 | 2018-10-16 | 思鷺科技股份有限公司 | Package structure |
| TW202131479A (en) * | 2018-03-23 | 2021-08-16 | 愛爾蘭商亞德諾半導體國際無限公司 | Semiconductor packages and apparatus having the same |
| US20220181299A1 (en) * | 2020-12-08 | 2022-06-09 | Samsung Electronics Co., Ltd. | Semiconductor package and method of manufacturing the semiconductor package |
| US20220359439A1 (en) * | 2021-05-06 | 2022-11-10 | Samsung Electronics Co., Ltd. | Semiconductor package and method of manufacturing the semiconductor package |
| US20230154910A1 (en) * | 2021-11-17 | 2023-05-18 | Samsung Electronics Co., Ltd. | Semiconductor chip, semiconductor package, and method of manufacturing the same |
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| Publication number | Publication date |
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| CN119230507A (en) | 2024-12-31 |
| TW202501728A (en) | 2025-01-01 |
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