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TWI851751B - Pre-applied underfill material, laminate, semiconductor wafer with pre-applied underfill material layer, substrate for mounting semiconductor with pre-applied underfill material layer, and semiconductor device - Google Patents

Pre-applied underfill material, laminate, semiconductor wafer with pre-applied underfill material layer, substrate for mounting semiconductor with pre-applied underfill material layer, and semiconductor device Download PDF

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TWI851751B
TWI851751B TW109121914A TW109121914A TWI851751B TW I851751 B TWI851751 B TW I851751B TW 109121914 A TW109121914 A TW 109121914A TW 109121914 A TW109121914 A TW 109121914A TW I851751 B TWI851751 B TW I851751B
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TW202112968A (en
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岡庭正志
東口鉱平
関戶隆人
高野健太郎
木田剛
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日商三菱瓦斯化學股份有限公司
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    • C08F22/00Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals each having only one carbon-to-carbon double bond, and at least one being terminated by a carboxyl radical and containing at least one other carboxyl radical in the molecule; Salts, anhydrides, esters, amides, imides or nitriles thereof
    • C08F22/36Amides or imides
    • C08F22/40Imides, e.g. cyclic imides
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
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    • H10W74/47
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
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    • B32B2255/00Coating on the layer surface
    • B32B2255/10Coating on the layer surface on synthetic resin layer or on natural or synthetic rubber layer
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2255/00Coating on the layer surface
    • B32B2255/26Polymeric coating
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2307/00Properties of the layers or laminate
    • B32B2307/30Properties of the layers or laminate having particular thermal properties
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2307/00Properties of the layers or laminate
    • B32B2307/50Properties of the layers or laminate having particular mechanical properties
    • B32B2307/546Flexural strength; Flexion stiffness
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00Electrical equipment
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    • C08J2335/00Characterised by the use of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a carboxyl radical, and containing at least one other carboxyl radical in the molecule, or of salts, anhydrides, esters, amides, imides or nitriles thereof; Derivatives of such polymers
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    • C08J2379/00Characterised by the use of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen, or carbon only, not provided for in groups C08J2361/00 - C08J2377/00
    • C08J2379/04Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
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    • C08J2435/00Characterised by the use of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a carboxyl radical, and containing at least one other carboxyl radical in the molecule, or of salts, anhydrides, esters, amides, imides or nitriles thereof; Derivatives of such polymers
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    • C08J2461/00Characterised by the use of condensation polymers of aldehydes or ketones; Derivatives of such polymers
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Abstract

The present invention provides a film comprising a compound (A) containing at least one compound selected from the group consisting of maleimide compounds and citraconimide compounds, an organic peroxide (B) containing at least one compound selected from the group consisting of organic peroxides represented by a specific formula, and an imidazole compound (C) represented by a specific formula.

Description

預塗型底部填充材料、疊層體、附設預塗型底部填充材料層之半導體晶圓、附設預塗型底部填充材料層之半導體搭載用基板、及半導體裝置 Pre-coated bottom filling material, laminate, semiconductor wafer with pre-coated bottom filling material layer, semiconductor mounting substrate with pre-coated bottom filling material layer, and semiconductor device

本發明關於薄膜、使用該薄膜之疊層體、附設薄膜層之半導體晶圓、附設薄膜層之半導體搭載用基板、及薄膜。詳細而言,本發明關於作為預塗型底部填充材料係為有效的薄膜。 The present invention relates to a film, a laminate using the film, a semiconductor wafer with a film layer, a semiconductor mounting substrate with a film layer, and a film. Specifically, the present invention relates to a film that is effective as a pre-coating bottom filling material.

近年,伴隨半導體裝置的小型化及高性能化,就將半導體晶片(以下有時簡稱為「晶片」)搭載於半導體搭載用基板(以下有時簡稱為「基板」)之方法而言,覆晶安裝正受到關注。在覆晶安裝時,一般工法係於晶片與基板接合後,將底部填充材料填充於晶片與基板的間隙並使其硬化。但是,伴隨半導體裝置的小型化、高性能化,排列於晶片之電極的窄節距化、電極間的窄間隙化也在進展, 填充底部填充材料之長時間化所導致作業性的惡化、漏未填充等填充不良的發生亦成為問題。對此,已有人探討將預塗型底部填充材料供給至晶片或基板後,同時實施晶片與基板之接合以及填充底部填充材料之工法。 In recent years, with the miniaturization and performance improvement of semiconductor devices, flip-chip mounting has attracted attention as a method of mounting a semiconductor chip (hereinafter sometimes referred to as a "chip") on a semiconductor mounting substrate (hereinafter sometimes referred to as a "substrate"). In flip-chip mounting, the general method is to fill the gap between the chip and the substrate with bottom fill material and harden it after the chip and the substrate are bonded. However, with the miniaturization and performance improvement of semiconductor devices, the electrodes arranged on the chip are being narrowed in pitch and the gaps between the electrodes are being narrowed. The long time of filling the bottom fill material has led to the deterioration of workability and the occurrence of poor filling such as leakage and non-filling, which has also become a problem. In response to this, some people have explored a method of supplying a pre-coated bottom fill material to a chip or substrate, and simultaneously bonding the chip and the substrate and filling the bottom fill material.

底部填充材料係和晶片及基板直接接觸的構件,故底部填充材料所要求的重要特性可列舉:在製造半導體裝置的步驟中,確保最適的熔融黏度、以及在製造及使用半導體裝置的環境中,抑制晶片及基板之間的底部填充材料未填充部分(以下有時簡稱為「空隙」)。 The bottom fill material is a component that is in direct contact with the chip and substrate, so the important properties required of the bottom fill material can be listed as follows: ensuring the most appropriate melt viscosity in the steps of manufacturing semiconductor devices, and suppressing the unfilled part of the bottom fill material between the chip and the substrate (hereinafter sometimes referred to as "gap") in the environment of manufacturing and using semiconductor devices.

專利文獻1記載:於主樹脂使用自由基聚合性單體而成的預塗型底部填充材料。該專利文獻1中有針對為了改善和晶片的黏接性之矽烷偶聯劑的摻合之記載。 Patent document 1 states: A pre-coated bottom fill material using a free radical polymerizable monomer in the main resin. Patent document 1 describes the blending of a silane coupling agent to improve adhesion to the chip.

專利文獻2記載:含有環氧樹脂、咪唑化合物、及馬來醯亞胺化合物之底部填充材料。 Patent document 2 states: bottom filling material containing epoxy resin, imidazole compound, and maleimide compound.

專利文獻3記載:使用環氧化合物、含有羧基之助熔劑成分之預塗型底部填充材料,並提及黏接。 Patent document 3 states: A pre-coated bottom filling material using epoxy compounds and flux components containing carboxyl groups, and mentions bonding.

專利文獻4記載:以馬來醯亞胺化合物、環氧樹脂、及環氧樹脂硬化劑作為必要成分之樹脂組成物,並記載:在熱硬化後之樹脂組成物中可獲得高密合性。 Patent document 4 states: A resin composition having maleimide compounds, epoxy resins, and epoxy resin hardeners as essential components, and states: High adhesion can be obtained in the resin composition after thermal curing.

專利文獻5中有針對為了形成印刷配線基板中的絕緣層而使用之熱硬化性樹脂組成物,其係含有具有特定的結構之馬來醯亞胺化合物、苯并

Figure 109121914-A0305-02-0005-132
化合物、及無機填充材(C)之印刷配線基板用樹脂組成物的記載。 Patent document 5 discloses a thermosetting resin composition for forming an insulating layer in a printed wiring board, which contains a maleimide compound having a specific structure, a benzoic acid
Figure 109121914-A0305-02-0005-132
Compound, and an inorganic filler (C) for a resin composition for a printed wiring board.

專利文獻6中有針對含有脂肪族環氧化合物、及苯并

Figure 109121914-A0305-02-0005-133
化合物作為硬化主劑,且含有酚系硬化劑之電子零件用黏接劑的記載。 Patent document 6 discloses a method for treating aliphatic epoxy compounds and benzoic acid
Figure 109121914-A0305-02-0005-133
This document describes adhesives for electronic components that use a compound as the main curing agent and contain a phenolic curing agent.

專利文獻7中有針對含有熱硬化性化合物、具有可和前述熱硬化性化合物反應之官能基的聚合物、及熱硬化劑,於接合溫度之熔融黏度為10Pa.s以上且15000Pa.s以下,於接合溫度之凝膠時間為10秒以上,且於240℃之凝膠時間為1秒以上且10秒以下之黏接劑組成物的記載。 Patent document 7 describes an adhesive composition containing a thermosetting compound, a polymer having a functional group that can react with the aforementioned thermosetting compound, and a thermosetting agent, with a melt viscosity at the bonding temperature of 10 Pa.s or more and 15000 Pa.s or less, a gelation time at the bonding temperature of 10 seconds or more, and a gelation time at 240°C of 1 second or more and 10 seconds or less.

專利文獻8中有使用片狀熱硬化性樹脂組成物之半導體裝置的製造方法之記載。 Patent document 8 describes a method for manufacturing a semiconductor device using a sheet-shaped thermosetting resin composition.

又,將晶片與基板介隔容易氧化之金屬例如焊料、銅而予以接合時,為了將成為接合的妨礙要素之金屬氧化膜從接合部去除,並獲得良好的金屬接合,有時會有在預塗型底部填充材料添加來自羧酸等之助熔劑成分的情況。 Furthermore, when a chip and a substrate are joined via an easily oxidizable metal such as solder or copper, a flux component such as carboxylic acid is sometimes added to the pre-coated bottom fill material in order to remove the metal oxide film that becomes an obstacle to the joining from the joint and obtain a good metal joint.

[先前技術文獻] [Prior Art Literature]

[專利文獻] [Patent Literature]

[專利文獻1] 日本特表2015-503220號公報 [Patent Document 1] Japanese Patent Publication No. 2015-503220

[專利文獻2] 日本特表2014-521754號公報 [Patent Document 2] Japanese Patent Publication No. 2014-521754

[專利文獻3] 日本特開2013-112730號公報 [Patent Document 3] Japanese Patent Publication No. 2013-112730

[專利文獻4] 日本特開2003-221443號公報 [Patent Document 4] Japanese Patent Publication No. 2003-221443

[專利文獻5] 日本特開2016-196548號公報 [Patent Document 5] Japanese Patent Publication No. 2016-196548

[專利文獻6] 日本特開2013-008800號公報 [Patent Document 6] Japanese Patent Publication No. 2013-008800

[專利文獻7] 日本特開2011-157529號公報 [Patent Document 7] Japanese Patent Publication No. 2011-157529

[專利文獻8] 日本特開2006-245242號公報 [Patent Document 8] Japanese Patent Publication No. 2006-245242

但是,一般而言自由基聚合性單體硬化快,且摻合的矽烷偶聯劑之黏接部位的運動性會受到晶片表面的矽醇基、以及在形成足夠的數量之鍵結前已進行聚合之主樹脂而被限制速度。其結果,在專利文獻1所記載之預塗型底部填充材料中,無法確保最適的熔融黏度,而無法獲得和晶片及和印刷配線板等基板之充分的密合性及黏接性,結果會有產生空隙的傾向。又,由於自由基聚合性單體硬化快,因此樹脂組成物會在填埋存在於晶片表面之凹凸前便硬化,故專利文獻1所記載之預塗型底部填充材料,會有無法充分獲得就黏接性改善方面係為有效之增黏(anchor)效果的問題。 However, generally speaking, free radical polymerizable monomers cure quickly, and the mobility of the bonding site of the mixed silane coupling agent is limited by the silanol groups on the chip surface and the main resin that has been polymerized before a sufficient number of bonds are formed. As a result, the pre-coated underfill material described in Patent Document 1 cannot ensure the most suitable melt viscosity, and cannot obtain sufficient adhesion and bonding with the chip and the substrate such as the printed wiring board, resulting in a tendency to generate voids. Furthermore, since the free radical polymerizable monomer cures quickly, the resin composition cures before filling the unevenness on the chip surface. Therefore, the pre-coated bottom filling material described in Patent Document 1 cannot fully obtain the anchor effect, which is effective in improving adhesion.

專利文獻2所記載之材料僅作用於聚醯亞胺鈍化膜,故會有適用範圍狹窄的問題。 The material described in Patent Document 2 only acts on polyimide passivated films, so it has a narrow scope of application.

專利文獻3所記載之技術中,即使在室溫,含羧基之化合物和環氧化合物仍會進行些微地反應,於保存時助熔劑活性會隨時間降低。因此,專利文獻3所記載之預塗型底部填充材料會有接合安定性低並欠缺量產性之問題。 In the technology described in Patent Document 3, carboxyl-containing compounds and epoxy compounds will still react slightly even at room temperature, and the flux activity will decrease over time during storage. Therefore, the pre-coated bottom filling material described in Patent Document 3 has the problem of low bonding stability and lack of mass production.

專利文獻4所記載之技術中,馬來醯亞胺樹脂的吸水率高,故會有吸濕處理後之晶片黏接性大幅降低之問題。黏接性不足的話,水會從剝離界面侵入,絕緣可靠性會大幅降低。另外,僅有馬來醯亞胺樹脂也不易兼顧和晶片之黏接性及和印刷配線基板之黏接性。 In the technology described in Patent Document 4, the water absorption rate of maleimide resin is high, so there is a problem that the chip adhesion is greatly reduced after moisture absorption treatment. If the adhesion is insufficient, water will penetrate from the peeling interface and the insulation reliability will be greatly reduced. In addition, it is not easy to take into account both the adhesion to the chip and the adhesion to the printed wiring board with only maleimide resin.

專利文獻5並無關於助熔劑活性之記載,又,針對助熔劑成分亦無記載。因此,專利文獻5所記載之樹脂組成物會有無法獲得良好的金屬接合之問題。 Patent document 5 does not describe the activity of the flux, nor does it describe the composition of the flux. Therefore, the resin composition described in Patent document 5 will have the problem of not being able to achieve good metal bonding.

在專利文獻6中,環氧化合物的黏接性高,但環氧化合物也會和助熔劑成分反應,並會有無法獲得足以得到良好的金屬接合之助熔劑活性的問題。 In Patent Document 6, epoxy compounds have high adhesion, but epoxy compounds also react with flux components, and there is a problem that the flux activity sufficient to obtain good metal bonding cannot be obtained.

專利文獻7的黏接劑組成物含有具有助熔性之熱硬化劑,但在實施例中使用環氧化合物及含環氧基之聚合物,且由於在比接合溫度更低溫時,兩者會進行反應,不易獲得充分的助熔劑活性。 The adhesive composition of Patent Document 7 contains a thermosetting agent with fluxing properties, but in the embodiment, epoxy compounds and epoxy-containing polymers are used, and since the two react at a temperature lower than the bonding temperature, it is not easy to obtain sufficient fluxing agent activity.

在專利文獻8中也記載環氧樹脂適合作為熱硬化性樹脂組成物中所含的熱硬化性樹脂,但亦如前所述,環氧化合物也會和助熔劑成分反應,並會有無法獲得足以得到良好的金屬接合之助熔劑活性的問題。 Patent document 8 also states that epoxy resin is suitable as the thermosetting resin contained in the thermosetting resin composition, but as mentioned above, epoxy compounds will also react with flux components and there will be a problem that the flux activity sufficient to obtain good metal bonding cannot be obtained.

本發明係鑒於如此的課題而成,並提供保存安定性、可撓性、助熔劑活性、硬化性、低空隙性、熔融黏度之平衡優良的薄膜、疊層體、附設薄膜層之半導體晶圓、附設薄膜層之半導體搭載用基板、及半導體裝置。 The present invention is made in view of such a problem, and provides a film, a laminate, a semiconductor wafer with a thin film layer, a semiconductor mounting substrate with a thin film layer, and a semiconductor device with an excellent balance of storage stability, flexibility, flux activity, hardening, low voids, and melt viscosity.

本發明人們為了解決習知技術所具有的上述課題進行深入探討後之結果發現,藉由合併使用特定成分可解決前述課題,乃至完成本發明。 The inventors of the present invention conducted in-depth research to solve the above-mentioned problems in the prior art and found that the above-mentioned problems can be solved by combining and using specific components, and even the present invention is completed.

亦即,本發明包含如下內容。 That is, the present invention includes the following contents.

[1] [1]

一種薄膜,含有:化合物(A),包含選自於由馬來醯亞胺化合物及檸康醯亞胺化合物構成之群組中之至少1種,有機過氧化物(B),包含選自於由下式(1)及下式(2)表示之有機過氧化物構成之群組中之至少1種,及咪唑化合物(C),以式(5)表示。 A film comprising: a compound (A) comprising at least one selected from the group consisting of maleimide compounds and oxadiazine compounds, an organic peroxide (B) comprising at least one selected from the group consisting of organic peroxides represented by the following formula (1) and the following formula (2), and an imidazole compound (C) represented by formula (5).

Figure 109121914-A0305-02-0008-2
Figure 109121914-A0305-02-0008-2

式(1)中,R1各自獨立地表示氫原子、甲基、或乙基。 In formula (1), R 1 each independently represents a hydrogen atom, a methyl group, or an ethyl group.

Figure 109121914-A0305-02-0008-3
Figure 109121914-A0305-02-0008-3

式(2)中,R2各自獨立地表示氫原子、甲基、或乙基,X1表示下式(3)或(4)表示之基。 In formula (2), R2 each independently represents a hydrogen atom, a methyl group, or an ethyl group, and X1 represents a group represented by the following formula (3) or (4).

Figure 109121914-A0305-02-0008-4
Figure 109121914-A0305-02-0008-4

式(3)中,R3表示氫原子、甲基、或乙基,R4表示碳數1以上且3以下之伸烷基,R5表示氫原子、或碳數1以上且6以下之烷基。 In formula (3), R 3 represents a hydrogen atom, a methyl group, or an ethyl group, R 4 represents an alkylene group having 1 to 3 carbon atoms, and R 5 represents a hydrogen atom, or an alkyl group having 1 to 6 carbon atoms.

Figure 109121914-A0305-02-0009-5
Figure 109121914-A0305-02-0009-5

式(4)中,R6各自獨立地表示氫原子、甲基、或乙基,X2表示下述通式(a)~(c)表示之基。 In formula (4), R 6 each independently represents a hydrogen atom, a methyl group, or an ethyl group, and X 2 represents a group represented by the following general formulas (a) to (c).

Figure 109121914-A0305-02-0009-6
Figure 109121914-A0305-02-0009-6

式(c)中,n1表示1以上且5以下之整數。 In formula (c), n1 represents an integer greater than or equal to 1 and less than or equal to 5.

Figure 109121914-A0305-02-0009-7
Figure 109121914-A0305-02-0009-7

式(5)中,R7表示甲基、或乙基,R8表示氫原子、碳數1以上且5以下之烷基、芳基、或芳烷基,R9表示氫原子、碳數1以上且5以下之烷基、芳基、或芳烷基。 In formula (5), R7 represents a methyl group or an ethyl group, R8 represents a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, an aryl group, or an aralkyl group, and R9 represents a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, an aryl group, or an aralkyl group.

[2] [2]

如[1]所記載之薄膜,其中,前述化合物(A)包含選自於由2,2’-雙[4-(4-馬來醯亞胺基苯氧基)苯基]丙烷、1,2-雙(馬來醯亞胺基)乙烷、1,4-雙(馬來醯亞胺基)丁烷、1,6-雙(馬來醯亞胺基)己烷、N,N’-1,3-伸苯基二馬來醯亞胺、N,N’-1,4-伸苯基二馬來醯亞胺、N-苯基馬來醯亞胺、下式(6)表示之馬來醯亞胺化合物、下式(7)表示之馬來醯亞胺化合物、下式(8)表示之馬來醯亞胺化合物、下式(9)表示之 馬來醯亞胺化合物、及含有下式(10)表示之構成單元與位於兩末端的馬來醯亞胺基之雙馬來醯亞胺化合物構成之群組中之至少1種。 The film as described in [1], wherein the compound (A) comprises a compound selected from 2,2'-bis[4-(4-maleimidophenoxy)phenyl]propane, 1,2-bis(maleimido)ethane, 1,4-bis(maleimido)butane, 1,6-bis(maleimido)hexane, N,N'-1,3-phenylene dimalimidyl, N,N'-1,4-phenylene dimalimidyl At least one of the group consisting of maleimide, N-phenylmaleimide, a maleimide compound represented by the following formula (6), a maleimide compound represented by the following formula (7), a maleimide compound represented by the following formula (8), a maleimide compound represented by the following formula (9), and a dimaleimide compound containing a constituent unit represented by the following formula (10) and maleimide groups at both ends.

Figure 109121914-A0305-02-0010-8
Figure 109121914-A0305-02-0010-8

式(6)中,R10各自獨立地表示氫原子、或甲基,n2表示1以上之整數。 In formula (6), R10 each independently represents a hydrogen atom or a methyl group, and n2 represents an integer greater than 1.

Figure 109121914-A0305-02-0010-10
Figure 109121914-A0305-02-0010-10

式(7)中,n3表示1以上且30以下之整數。 In formula (7), n 3 represents an integer greater than or equal to 1 and less than or equal to 30.

Figure 109121914-A0305-02-0010-11
Figure 109121914-A0305-02-0010-11

式(8)中,R11各自獨立地表示氫原子、甲基、或乙基,R12各自獨立地表示氫原子、或甲基。 In formula (8), R 11 each independently represents a hydrogen atom, a methyl group or an ethyl group, and R 12 each independently represents a hydrogen atom or a methyl group.

[化10]

Figure 109121914-A0305-02-0011-12
[Chemistry 10]
Figure 109121914-A0305-02-0011-12

式(9)中,R13各自獨立地表示氫原子、碳數1~5之烷基、或苯基,n4表示1以上且10以下之整數。 In formula (9), R 13 each independently represents a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a phenyl group, and n 4 represents an integer of 1 to 10.

Figure 109121914-A0305-02-0011-13
Figure 109121914-A0305-02-0011-13

式(10)中,R14表示碳數1以上且16以下之直鏈狀或分支狀之伸烷基、或碳數2以上且16以下之直鏈狀或分支狀之伸烯基,R15表示碳數1以上且16以下之直鏈狀或分支狀之伸烷基、或碳數2以上且16以下之直鏈狀或分支狀之伸烯基,R16各自獨立地表示氫原子、碳數1以上且16以下之直鏈狀或分支狀之烷基、或碳數2以上且16以下之直鏈狀或分支狀之烯基,n5表示1以上且10以下之整數。 In formula (10), R14 represents a linear or branched alkylene group having 1 to 16 carbon atoms, or a linear or branched alkenylene group having 2 to 16 carbon atoms; R15 represents a linear or branched alkylene group having 1 to 16 carbon atoms, or a linear or branched alkenylene group having 2 to 16 carbon atoms; R16 each independently represents a hydrogen atom, a linear or branched alkylene group having 1 to 16 carbon atoms, or a linear or branched alkenylene group having 2 to 16 carbon atoms; and n5 represents an integer of 1 to 10.

[3] [3]

如[2]所記載之薄膜,其中,前述化合物(A)包含選自於由2,2’-雙[4-(4-馬來醯亞胺基苯氧基)苯基]丙烷、前述式(6)表示之馬來醯亞胺化合物、前述式(7)表示之馬來醯亞胺化合物、前述式(8)表示之馬來醯亞胺化合物、前述式(9)表示之馬來醯亞胺化合物、及含有前述式(10)表示之構成單元與位於兩末端的馬來醯亞胺基之雙馬來醯亞胺化合物構成之群組中之至少1種。 The film as described in [2], wherein the compound (A) comprises at least one selected from the group consisting of 2,2'-bis[4-(4-maleimide phenoxy)phenyl]propane, a maleimide compound represented by the above formula (6), a maleimide compound represented by the above formula (7), a maleimide compound represented by the above formula (8), a maleimide compound represented by the above formula (9), and a bismaleimide compound containing a constituent unit represented by the above formula (10) and maleimide groups at both ends.

[4] [4]

如[1]~[3]中任一項所記載之薄膜,其中,前述有機過氧化物(B)包含選自於由過氧化二異丙苯、4,4-二(三級丁基過氧化)戊酸正丁酯、二(2-三級丁基過氧化 異丙基)苯、2,5-二甲基-2,5-雙(三級丁基過氧化)-3-己炔、及2,5-二甲基-2,5-雙(三級丁基過氧化)己烷構成之群組中之至少一種。 A film as described in any one of [1] to [3], wherein the organic peroxide (B) comprises at least one selected from the group consisting of diisopropylbenzene peroxide, 4,4-di(tertiary butylperoxy)butyl valerate, di(2-tertiary butylperoxy isopropyl)benzene, 2,5-dimethyl-2,5-bis(tertiary butylperoxy)-3-hexyne, and 2,5-dimethyl-2,5-bis(tertiary butylperoxy)hexane.

[5] [5]

如[1]~[4]中任一項所記載之薄膜,其中,前述咪唑化合物(C)為下式(11)表示之咪唑化合物。 A film as described in any one of [1] to [4], wherein the imidazole compound (C) is an imidazole compound represented by the following formula (11).

Figure 109121914-A0305-02-0012-14
Figure 109121914-A0305-02-0012-14

式(11)中,R17表示甲基、或乙基,R18表示氫原子、碳數1以上且5以下之烷基、芳基、或芳烷基,R19表示氫原子、或甲基。 In formula (11), R 17 represents a methyl group or an ethyl group, R 18 represents a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, an aryl group, or an aralkyl group, and R 19 represents a hydrogen atom or a methyl group.

[6] [6]

如[5]所記載之薄膜,其中,前述咪唑化合物(C)為下式(12)表示之咪唑化合物。 The film as described in [5], wherein the imidazole compound (C) is an imidazole compound represented by the following formula (12).

Figure 109121914-A0305-02-0012-15
Figure 109121914-A0305-02-0012-15

式(12)中,R20表示甲基、或乙基,R21表示氫原子、甲基、乙基、或苄基,R22表示氫原子、或甲基。 In formula (12), R20 represents a methyl group or an ethyl group, R21 represents a hydrogen atom, a methyl group, an ethyl group or a benzyl group, and R22 represents a hydrogen atom or a methyl group.

[7] [7]

如[5]或[6]所記載之薄膜,其中,前述咪唑化合物(C)包含選自於由1-苄基-2-甲基咪唑、1,2-二甲基咪唑、及2-乙基-4-甲基咪唑構成之群組中之至少一種。 The film as described in [5] or [6], wherein the imidazole compound (C) comprises at least one selected from the group consisting of 1-benzyl-2-methylimidazole, 1,2-dimethylimidazole, and 2-ethyl-4-methylimidazole.

[8] [8]

如[1]~[7]中任一項所記載之薄膜,其中,前述咪唑化合物(C)的含量相對於前述化合物(A)100質量份,為10質量份以下。 A film as described in any one of [1] to [7], wherein the content of the imidazole compound (C) is 10 parts by mass or less relative to 100 parts by mass of the compound (A).

[9] [9]

如[1]~[8]中任一項所記載之薄膜,更含有下式(13)、下式(14)、下式(15)、及下式(16)表示之苯并

Figure 109121914-A0305-02-0013-134
化合物(D)。 The film as described in any one of [1] to [8] further contains benzo[13] represented by the following formula (14), the following formula (15), and the following formula (16):
Figure 109121914-A0305-02-0013-134
Compound (D).

Figure 109121914-A0305-02-0013-16
Figure 109121914-A0305-02-0013-16

式(13)中,R23各自獨立地表示芳基、芳烷基、烯基、烷基、或環烷基,R24表示氫原子、芳基、芳烷基、烯基、烷基、環烷基、或下述通式(d)~(w)表示之1~4價之有機基,n5表示1~4之整數。 In formula (13), R23 each independently represents an aryl group, an aralkyl group, an alkenyl group, an alkyl group, or a cycloalkyl group, R24 represents a hydrogen atom, an aryl group, an aralkyl group, an alkenyl group, an alkyl group, a cycloalkyl group, or a 1-4 valent organic group represented by the following general formulae (d) to (w), and n5 represents an integer of 1 to 4.

Figure 109121914-A0305-02-0013-17
Figure 109121914-A0305-02-0013-17

式(14)中,R25各自獨立地表示氫原子、芳基、芳烷基、烯基、烷基、或環烷基,R26表示芳基、芳烷基、烯基、烷基、環烷基、或下述通式(d)~(r)表示之1~4價之有機基,n6表示1~4之整數。 In formula (14), R25 each independently represents a hydrogen atom, an aryl group, an aralkyl group, an alkenyl group, an alkyl group, or a cycloalkyl group; R26 represents an aryl group, an aralkyl group, an alkenyl group, an alkyl group, a cycloalkyl group, or a 1-4 valent organic group represented by the following general formulae (d) to (r); and n6 represents an integer of 1 to 4.

Figure 109121914-A0305-02-0013-18
Figure 109121914-A0305-02-0013-18

式(15)中,R27表示烷基、環烷基、或亦可具有取代基之苯基。 In formula (15), R 27 represents an alkyl group, a cycloalkyl group, or a phenyl group which may have a substituent.

Figure 109121914-A0305-02-0014-19
Figure 109121914-A0305-02-0014-19

式(16)中,R28表示烷基、環烷基、或亦可具有取代基之苯基。 In formula (16), R 28 represents an alkyl group, a cycloalkyl group, or a phenyl group which may have a substituent.

Figure 109121914-A0305-02-0014-161
Figure 109121914-A0305-02-0014-161

Figure 109121914-A0305-02-0014-21
Figure 109121914-A0305-02-0014-21

Figure 109121914-A0305-02-0014-162
Figure 109121914-A0305-02-0014-162

Figure 109121914-A0305-02-0014-23
Figure 109121914-A0305-02-0014-23

[化22]

Figure 109121914-A0305-02-0015-25
[Chemistry 22]
Figure 109121914-A0305-02-0015-25

Figure 109121914-A0305-02-0015-26
Figure 109121914-A0305-02-0015-26

Figure 109121914-A0305-02-0015-27
Figure 109121914-A0305-02-0015-27

式(d)~(w)中,Ra表示芳基、芳烷基、烯基、烷基、或環烷基,Rb表示氫原子、芳基、芳烷基、烯基、烷基、或環烷基。 In formulae (d) to (w), Ra represents an aryl group, an aralkyl group, an alkenyl group, an alkyl group, or a cycloalkyl group, and Rb represents a hydrogen atom, an aryl group, an aralkyl group, an alkenyl group, an alkyl group, or a cycloalkyl group.

[10] [10]

如[9]所記載之薄膜,其中,前述苯并

Figure 109121914-A0305-02-0015-135
化合物(D)包含選自於由下式(17)及下式(18)表示之化合物構成之群組中之至少1種。 The film as described in [9], wherein the benzo
Figure 109121914-A0305-02-0015-135
The compound (D) comprises at least one selected from the group consisting of compounds represented by the following formula (17) and the following formula (18).

Figure 109121914-A0305-02-0015-28
Figure 109121914-A0305-02-0015-28

式(17)中,R29各自獨立地表示氫原子、芳基、芳烷基、烯基、烷基、或環烷基,R30各自獨立地表示氫原子、芳基、芳烷基、烯基、烷基、或環烷基,X3 表示伸烷基、下式(19)表示之基、式「-SO2-」表示之基、式「-CO-」表示之基、氧原子、或單鍵。 In formula (17), R 29 each independently represents a hydrogen atom, an aryl group, an aralkyl group, an alkenyl group, an alkyl group, or a cycloalkyl group; R 30 each independently represents a hydrogen atom, an aryl group, an aralkyl group, an alkenyl group, an alkyl group, or a cycloalkyl group; X 3 represents an alkylene group, a group represented by the following formula (19), a group represented by the formula "-SO 2 -", a group represented by the formula "-CO-", an oxygen atom, or a single bond.

Figure 109121914-A0305-02-0016-29
Figure 109121914-A0305-02-0016-29

式(18)中,R31各自獨立地表示氫原子、芳基、芳烷基、烯基、烷基、或環烷基,R32各自獨立地表示氫原子、芳基、芳烷基、烯基、烷基、或環烷基,X4表示伸烷基、下式(19)表示之基、式「-SO2-」表示之基、式「-CO-」表示之基、氧原子、或單鍵。 In formula (18), R 31 each independently represents a hydrogen atom, an aryl group, an aralkyl group, an alkenyl group, an alkyl group, or a cycloalkyl group; R 32 each independently represents a hydrogen atom, an aryl group, an aralkyl group, an alkenyl group, an alkyl group, or a cycloalkyl group; X 4 represents an alkylene group, a group represented by the following formula (19), a group represented by the formula "-SO 2 -", a group represented by the formula "-CO-", an oxygen atom, or a single bond.

Figure 109121914-A0305-02-0016-30
Figure 109121914-A0305-02-0016-30

式(19)中,Y為伸烷基、或具有芳香族環之碳數6以上且30以下之烴基,n7表示0以上之整數。 In formula (19), Y is an alkylene group or a alkyl group having 6 or more and 30 or less carbon atoms and having an aromatic ring, and n7 represents an integer of 0 or more.

[11] [11]

如[9]或[10]所記載之薄膜,其中,前述苯并

Figure 109121914-A0305-02-0016-136
化合物(D)包含選自於由下式(20)表示之化合物、下式(21)表示之化合物、下式(22)表示之化合物、下式(23)表示之化合物、下式(24)表示之化合物、及下式(25)表示之化合物構成之群組中之至少1種。 The film as described in [9] or [10], wherein the benzo
Figure 109121914-A0305-02-0016-136
Compound (D) includes at least one selected from the group consisting of a compound represented by the following formula (20), a compound represented by the following formula (21), a compound represented by the following formula (22), a compound represented by the following formula (23), a compound represented by the following formula (24), and a compound represented by the following formula (25).

Figure 109121914-A0305-02-0016-31
Figure 109121914-A0305-02-0016-31

[化29]

Figure 109121914-A0305-02-0017-33
[Chemistry 29]
Figure 109121914-A0305-02-0017-33

Figure 109121914-A0305-02-0017-35
Figure 109121914-A0305-02-0017-35

式(22)中,R33各自獨立地表示氫原子、或碳數1~4之烴基。 In formula (22), R 33 each independently represents a hydrogen atom or a carbon number 1 to 4 alkyl group.

Figure 109121914-A0305-02-0017-36
Figure 109121914-A0305-02-0017-36

Figure 109121914-A0305-02-0017-37
Figure 109121914-A0305-02-0017-37

Figure 109121914-A0305-02-0017-38
Figure 109121914-A0305-02-0017-38

[12] [12]

如[9]~[11]中任一項所記載之薄膜,其中,前述苯并

Figure 109121914-A0305-02-0017-137
化合物(D)的含量相對於前述化合物(A)100質量份,為5質量份以上且50質量份以下。 The film as described in any one of [9] to [11], wherein the benzo
Figure 109121914-A0305-02-0017-137
The content of the compound (D) is 5 parts by mass or more and 50 parts by mass or less based on 100 parts by mass of the compound (A).

[13] [13]

如[1]~[12]中任一項所記載之薄膜,更含有丙烯基化合物(E)。 The film as described in any one of [1] to [12] further contains an acrylic compound (E).

[14] [14]

如[13]所記載之薄膜,其中,前述丙烯基化合物(E)的含量相對於前述化合物(A)100質量份,為5質量份以上且50質量份以下。 The film as described in [13], wherein the content of the aforementioned acrylic compound (E) is 5 parts by mass or more and 50 parts by mass or less relative to 100 parts by mass of the aforementioned compound (A).

[15] [15]

如[1]~[14]中任一項所記載之薄膜,更含有助熔劑成分(F)。 The film described in any one of [1] to [14] further contains a flux component (F).

[16] [16]

如[15]所記載之薄膜,其中,前述助熔劑成分(F)的含量相對於前述化合物(A)100質量份,為5質量份以上且60質量份以下。 The film as described in [15], wherein the content of the flux component (F) is 5 parts by mass or more and 60 parts by mass or less relative to 100 parts by mass of the compound (A).

[17] [17]

如[1]~[16]中任一項所記載之薄膜,更含有無機填充材(G)。 The film described in any one of [1] to [16] further contains an inorganic filler (G).

[18] [18]

如[17]所記載之薄膜,其中,前述無機填充材(G)的平均粒徑為3μm以下。 A film as described in [17], wherein the average particle size of the inorganic filler (G) is less than 3 μm.

[19] [19]

如[17]或[18]所記載之薄膜,其中,前述無機填充材(G)包含選自於由二氧化矽、氫氧化鋁、氧化鋁、軟水鋁石(boehmite)、氮化硼、氮化鋁、氧化鎂、及氫氧化鎂構成之群組中之至少1種。 The film as described in [17] or [18], wherein the inorganic filler (G) comprises at least one selected from the group consisting of silicon dioxide, aluminum hydroxide, aluminum oxide, boehmite, boron nitride, aluminum nitride, magnesium oxide, and magnesium hydroxide.

[20] [20]

如[17]~[19]中任一項所記載之薄膜,其中,前述無機填充材(G)的含量相對於前述化合物(A)100質量份,為300質量份以下。 A film as described in any one of [17] to [19], wherein the content of the inorganic filler (G) is 300 parts by mass or less relative to 100 parts by mass of the compound (A).

[21] [twenty one]

如[1]~[20]中任一項所記載之薄膜,更含有氫過氧化物(H)。 A film as described in any one of [1] to [20], further comprising hydroperoxide (H).

[22] [twenty two]

如[21]所記載之薄膜,其中,前述氫過氧化物(H)的含量相對於前述化合物(A)之合計量100質量份,為10質量份以下。 The film as described in [21], wherein the content of the hydroperoxide (H) is 10 parts by mass or less relative to 100 parts by mass of the total amount of the compound (A).

[23] [twenty three]

如[1]~[22]中任一項所記載之薄膜,厚度為10μm以上且100μm以下。 A film as described in any one of [1] to [22], having a thickness of not less than 10 μm and not more than 100 μm.

[24] [twenty four]

如[1]~[23]中任一項所記載之薄膜,係用於預塗型底部填充材料。 A film as described in any one of [1] to [23] is used for a pre-coated bottom filling material.

[25] [25]

一種疊層體,具備:支持基材,及疊層於前述支持基材上之含有如[1]~[24]中任一項所記載之薄膜之層。 A laminated body comprising: a supporting substrate, and a layer containing a thin film as described in any one of [1] to [24] laminated on the supporting substrate.

[26] [26]

一種附設薄膜層之半導體晶圓,具備:半導體晶圓,及疊層於前述半導體晶圓之如[25]所記載之疊層體;且前述含有薄膜之層疊層於前述半導體晶圓。 A semiconductor wafer with a thin film layer, comprising: a semiconductor wafer, and a stacked body as described in [25] stacked on the semiconductor wafer; and the layer containing the thin film is stacked on the semiconductor wafer.

[27] [27]

一種附設薄膜層之半導體搭載用基板,具備:半導體搭載用基板,及疊層於前述半導體搭載用基板之如[25]所記載之疊層體;且前述含有薄膜之層疊層於前述半導體搭載用基板。 A semiconductor mounting substrate with a thin film layer, comprising: a semiconductor mounting substrate, and a stacked body as described in [25] stacked on the semiconductor mounting substrate; and the thin film-containing layer is stacked on the semiconductor mounting substrate.

[28] [28]

一種半導體裝置,具備如[26]所記載之附設薄膜層之半導體晶圓及/或如[27]所記載之附設薄膜層之半導體搭載用基板。 A semiconductor device comprising a semiconductor wafer with a thin film layer as described in [26] and/or a semiconductor mounting substrate with a thin film layer as described in [27].

根據本發明可提供保存安定性、可撓性、助熔劑活性、低空隙性、熔融黏度之平衡優良的,薄膜、疊層體、附設薄膜層之半導體晶圓、附設薄膜層之半導體搭載用基板、及半導體裝置。 According to the present invention, a film, a laminate, a semiconductor wafer with a thin film layer, a semiconductor mounting substrate with a thin film layer, and a semiconductor device with an excellent balance of storage stability, flexibility, flux activity, low voids, and melt viscosity can be provided.

以下,針對用以實施本發明之形態(以下簡稱為「本實施形態」)進行說明。另外,下列本實施形態係用以說明本發明之例示,本發明不限於僅為本實施形態。 The following is a description of the form used to implement the present invention (hereinafter referred to as "this embodiment"). In addition, the following embodiment is an example used to illustrate the present invention, and the present invention is not limited to this embodiment.

[薄膜] [Thin film]

本實施形態之薄膜含有包含選自於由馬來醯亞胺化合物及檸康醯亞胺化合物構成之群組中之至少1種之化合物(A)(以下也簡稱「化合物(A)」)、包含選自於由下式(1)及下式(2)表示之有機過氧化物構成之群組中之至少1種之有機過氧化物(B)(以下也簡稱「有機過氧化物(B)」)、下式(5)表示之咪唑化合物(C)(以下也簡稱「咪唑化合物(C)」)。由於如此地構成,故本實施形態之薄膜為保存安定性、可撓性、助熔劑活性、硬化性、低空隙性、熔融黏度之平衡優良者。本實施形態之薄膜由於具有如此的性能,故適合使用作為晶片之覆晶安裝所使用的預塗型底部填充材料。 The film of the present embodiment contains at least one compound (A) selected from the group consisting of maleimide compounds and oxadiazine compounds (hereinafter referred to as "compound (A)"), at least one organic peroxide (B) selected from the group consisting of organic peroxides represented by the following formula (1) and the following formula (2) (hereinafter referred to as "organic peroxide (B)"), and an imidazole compound (C) represented by the following formula (5) (hereinafter referred to as "imidazole compound (C)"). Due to such a structure, the film of the present embodiment has an excellent balance of storage stability, flexibility, flux activity, curability, low voids, and melt viscosity. Due to such performance, the film of the present embodiment is suitable for use as a pre-coated bottom filling material used for flip-chip mounting of chips.

Figure 109121914-A0305-02-0020-39
Figure 109121914-A0305-02-0020-39

式(1)中,R1各自獨立地表示氫原子、甲基、或乙基。 In formula (1), R 1 each independently represents a hydrogen atom, a methyl group, or an ethyl group.

Figure 109121914-A0305-02-0021-40
Figure 109121914-A0305-02-0021-40

式(2)中,R2各自獨立地表示氫原子、甲基、或乙基,X1表示下式(3)或(4)表示之基。 In formula (2), R2 each independently represents a hydrogen atom, a methyl group, or an ethyl group, and X1 represents a group represented by the following formula (3) or (4).

Figure 109121914-A0305-02-0021-41
Figure 109121914-A0305-02-0021-41

式(3)中,R3表示氫原子、甲基、或乙基,R4表示碳數1以上且3以下之伸烷基,R5表示氫原子、或碳數1以上且6以下之烷基。 In formula (3), R 3 represents a hydrogen atom, a methyl group, or an ethyl group, R 4 represents an alkylene group having 1 to 3 carbon atoms, and R 5 represents a hydrogen atom, or an alkyl group having 1 to 6 carbon atoms.

Figure 109121914-A0305-02-0021-100
Figure 109121914-A0305-02-0021-100

式(4)中,R6各自獨立地表示氫原子、甲基、或乙基,X2表示下述通式(a)~(c)表示之基。 In formula (4), R 6 each independently represents a hydrogen atom, a methyl group, or an ethyl group, and X 2 represents a group represented by the following general formulas (a) to (c).

Figure 109121914-A0305-02-0021-42
Figure 109121914-A0305-02-0021-42

式(c)中,n1表示1以上且5以下之整數。 In formula (c), n1 represents an integer greater than or equal to 1 and less than or equal to 5.

Figure 109121914-A0305-02-0021-43
Figure 109121914-A0305-02-0021-43

式(5)中,R7表示甲基、或乙基,R8表示氫原子、碳數1以上且5以下之烷基、芳基、或芳烷基,R9表示氫原子、碳數1以上且5以下之烷基、芳基、或芳烷基。 In formula (5), R7 represents a methyl group or an ethyl group, R8 represents a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, an aryl group, or an aralkyl group, and R9 represents a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, an aryl group, or an aralkyl group.

[化合物(A)] [Compound (A)]

考慮絕緣可靠性及耐熱性之觀點,本實施形態之薄膜中含有包含選自於由馬來醯亞胺化合物及檸康醯亞胺化合物構成之群組中之至少1種之化合物(A)。化合物(A)若為於分子內包含選自於由馬來醯亞胺基及檸康醯亞胺基構成之群組中之至少1種者,則無特別限制。化合物(A)宜不會和後述助熔劑成分(F)展現反應性。化合物(A)可單獨使用1種或混合使用2種以上。 From the viewpoint of insulation reliability and heat resistance, the film of this embodiment contains a compound (A) containing at least one selected from the group consisting of maleimide compounds and cisconamide compounds. There is no particular limitation if the compound (A) contains at least one selected from the group consisting of maleimide and cisconamide groups in the molecule. It is preferred that the compound (A) does not show reactivity with the flux component (F) described later. The compound (A) can be used alone or in combination of two or more.

考慮和後述丙烯基化合物(E)獲得優良的反應性、絕緣性可靠性、及耐熱性之觀點,本實施形態中之化合物(A)宜包含馬來醯亞胺化合物。 Considering the fact that the acrylic compound (E) described later has excellent reactivity, insulation reliability, and heat resistance, the compound (A) in this embodiment preferably contains a maleimide compound.

馬來醯亞胺化合物若為分子中具有1個以上之馬來醯亞胺基的樹脂或化合物,則無特別限制。馬來醯亞胺化合物可使用1種或混合使用2種以上。 The maleimide compound is not particularly limited as long as it is a resin or compound having one or more maleimide groups in the molecule. The maleimide compound can be used alone or in combination of two or more.

馬來醯亞胺化合物的具體例可列舉:N-苯基馬來醯亞胺、N-羥基苯基馬來醯亞胺、雙(4-馬來醯亞胺基苯基)甲烷、4,4-二苯基甲烷雙馬來醯亞胺、雙(3,5-二甲基-4-馬來醯亞胺基苯基)甲烷、雙(3-乙基-5-甲基-4-馬來醯亞胺基苯基)甲烷、雙(3,5-二乙基-4-馬來醯亞胺基苯基)甲烷、苯基甲烷馬來醯亞胺、鄰苯雙馬來醯亞胺、間苯雙馬來醯亞胺、對苯雙馬來醯亞胺、2,2-雙(4-(4-馬來醯亞胺基苯氧基)-苯基)丙烷、3,3-二甲基-5,5-二乙基-4,4-二苯基甲烷雙馬來醯亞胺、4-甲基-1,3-伸苯基雙馬來醯亞胺、1,6-雙馬來醯亞胺基-(2,2,4-三甲基)己烷、4,4-二苯基醚雙馬來醯亞胺、4,4-二苯基碸雙馬來醯亞胺、1,3-雙(3-馬來醯亞胺基苯氧基)苯、1,3-雙(4-馬來醯亞胺基苯氧基)苯、聚苯甲烷馬來醯亞胺、酚醛清漆型馬來 醯亞胺化合物、聯苯芳烷基型馬來醯亞胺化合物、2,2-雙(4-(4-馬來醯亞胺基苯氧基)苯基)丙烷、1,2-雙(馬來醯亞胺基)乙烷、1,4-雙(馬來醯亞胺基)丁烷、1,6-雙(馬來醯亞胺基)己烷、N,N’-1,3-伸苯基二馬來醯亞胺、N,N’-1,4-伸苯基二馬來醯亞胺、N-苯基馬來醯亞胺、下式(6)表示之馬來醯亞胺化合物、下式(7)表示之馬來醯亞胺化合物、下式(8)表示之馬來醯亞胺化合物、下式(9)表示之馬來醯亞胺化合物、及含有下式(10)表示之構成單元與位於兩末端的馬來醯亞胺基之馬來醯亞胺化合物等,但不限於此。化合物(A)也能以將馬來醯亞胺化合物進行聚合而得的預聚物及將馬來醯亞胺化合物和胺化合物等其它化合物進行聚合而得的預聚物等之形式,使其含於本實施形態之薄膜中。 Specific examples of maleimide compounds include: N-phenylmaleimide, N-hydroxyphenylmaleimide, bis(4-maleimidophenyl)methane, 4,4-diphenylmethane bismaleimide, bis(3,5-dimethyl-4-maleimidophenyl)methane, bis(3-ethyl-5-methyl-4-maleimidophenyl)methane, bis(3,5-diethyl-4-maleimidophenyl)methane, phenylmethane maleimide, o-phenyl bismaleimide, 2,2-Bis(4-(4-maleimidophenoxy)-phenyl)propane, 3,3-dimethyl-5,5-diethyl-4,4-diphenylmethane bismaleimide, 4-methyl-1,3-phenylene bismaleimide, 1,6-bismaleimido-(2,2,4-trimethyl)hexane, 4,4-diphenyl ether bismaleimide, 4,4-diphenylsulfonium bismaleimide, 1,3-Bis(3-maleimidophenoxy)benzene, 1,3-Bis(4-maleimidophenoxy)benzene, polyphenylmethane maleimide, novolac maleimide compounds, biphenyl aralkyl maleimide compounds, 2,2-bis(4-(4-maleimidophenoxy)phenyl)propane, 1,2-bis(maleimido)ethane, 1,4-bis(maleimido)butane, 1,6-bis(maleimido)hexane, N,N '-1,3-phenylene dimalienyl, N,N'-1,4-phenylene dimalienyl, N-phenyl maleimide, maleimide compounds represented by the following formula (6), maleimide compounds represented by the following formula (7), maleimide compounds represented by the following formula (8), maleimide compounds represented by the following formula (9), and maleimide compounds containing a constituent unit represented by the following formula (10) and maleimide groups at both ends, etc., but not limited thereto. Compound (A) can also be contained in the film of the present embodiment in the form of a prepolymer obtained by polymerizing a maleimide compound and a prepolymer obtained by polymerizing a maleimide compound and other compounds such as an amine compound.

Figure 109121914-A0305-02-0023-44
Figure 109121914-A0305-02-0023-44

式(6)中,R10各自獨立地表示氫原子、或甲基,n2表示1以上之整數,宜表示1以上且10以下之整數。 In formula (6), R10 each independently represents a hydrogen atom or a methyl group, and n2 represents an integer greater than 1, preferably an integer greater than 1 and less than 10.

Figure 109121914-A0305-02-0023-45
Figure 109121914-A0305-02-0023-45

式(7)中,n3表示1以上且30以下之整數。 In formula (7), n 3 represents an integer greater than or equal to 1 and less than or equal to 30.

[化42]

Figure 109121914-A0305-02-0024-46
[Chemistry 42]
Figure 109121914-A0305-02-0024-46

式(8)中,R11各自獨立地表示氫原子、甲基、或乙基,R12各自獨立地表示氫原子、或甲基。 In formula (8), R 11 each independently represents a hydrogen atom, a methyl group or an ethyl group, and R 12 each independently represents a hydrogen atom or a methyl group.

Figure 109121914-A0305-02-0024-47
Figure 109121914-A0305-02-0024-47

式(9)中,R13各自獨立地表示氫原子、碳數1~5之烷基、或苯基,n4表示1以上且10以下之整數。 In formula (9), R 13 each independently represents a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a phenyl group, and n 4 represents an integer of 1 to 10.

Figure 109121914-A0305-02-0024-48
Figure 109121914-A0305-02-0024-48

式(10)中,R14表示碳數1以上且16以下之直鏈狀或分支狀之伸烷基、或碳數2以上且16以下之直鏈狀或分支狀之伸烯基,R15表示碳數1以上且16以下之直鏈狀或分支狀之伸烷基、或碳數2以上且16以下之直鏈狀或分支狀之伸烯基,R16各自獨立地表示氫原子、碳數1以上且16以下之直鏈狀或分支狀之烷基、或碳數2以上且16以下之直鏈狀或分支狀之烯基,n5表示1以上且10以下之整數。 In formula (10), R14 represents a linear or branched alkylene group having 1 to 16 carbon atoms, or a linear or branched alkenylene group having 2 to 16 carbon atoms; R15 represents a linear or branched alkylene group having 1 to 16 carbon atoms, or a linear or branched alkenylene group having 2 to 16 carbon atoms; R16 each independently represents a hydrogen atom, a linear or branched alkylene group having 1 to 16 carbon atoms, or a linear or branched alkenylene group having 2 to 16 carbon atoms; and n5 represents an integer of 1 to 10.

化合物(A)於上述之中,考慮對有機溶劑之溶解性的觀點,宜包含選自於由2,2’-雙[4-(4-馬來醯亞胺基苯氧基)苯基]丙烷、1,2-雙(馬來醯亞胺基)乙烷、1,4-雙(馬來醯亞胺基)丁烷、1,6-雙(馬來醯亞胺基)己烷、N,N’-1,3-伸苯基二馬來醯亞 胺、N,N’-1,4-伸苯基二馬來醯亞胺、N-苯基馬來醯亞胺、上述式(6)表示之馬來醯亞胺化合物、上述式(7)表示之馬來醯亞胺化合物、上述式(8)表示之馬來醯亞胺化合物、上述式(9)表示之馬來醯亞胺化合物、及含有上述式(10)表示之構成單元與位於兩末端的馬來醯亞胺基之雙馬來醯亞胺化合物構成之群組中之至少1種,包含選自於由2,2’-雙[4-(4-馬來醯亞胺基苯氧基)苯基]丙烷、前述式(6)表示之馬來醯亞胺化合物、前述式(7)表示之馬來醯亞胺化合物、前述式(8)表示之馬來醯亞胺化合物、前述式(9)表示之馬來醯亞胺化合物、及含有前述式(10)表示之構成單元與位於兩末端的馬來醯亞胺基之雙馬來醯亞胺化合物構成之群組中之至少1種更佳。此外,化合物(A)考慮維持良好的保存安定性、可撓性、助熔劑活性、硬化性及低空隙性,同時尤其使熔融黏度改善之觀點,就馬來醯亞胺化合物而言,包含上述式(9)表示之馬來醯亞胺化合物再更佳,包含2,2-雙[4-(4-馬來醯亞胺基苯氧基)苯基]丙烷、式(7)表示之馬來醯亞胺化合物、式(8)表示之馬來醯亞胺化合物及式(9)表示之馬來醯亞胺化合物又更佳。 Among the above compounds, the compound (A) preferably includes a compound selected from 2,2'-bis[4-(4-maleimidophenoxy)phenyl]propane, 1,2-bis(maleimido)ethane, 1,4-bis(maleimido)butane, 1,6-bis(maleimido)hexane, N,N'-1,3-phenylene dimalimidamine, N,N'-1,4-phenylene dimalimidamine, N-phenylmaleimide, the maleimide compound represented by the above formula (6), the maleimide compound represented by the above formula (7), the maleimide compound represented by the above formula (8), the maleimide compound represented by the above formula (9), The maleimide compound represented by the above formula (6), the maleimide compound represented by the above formula (7), the maleimide compound represented by the above formula (8), the maleimide compound represented by the above formula (9), and the bismaleimide compound represented by the above formula (10), and the maleimide group. In addition, compound (A) is more preferably a maleimide compound represented by the above formula (9), and more preferably a maleimide compound represented by 2,2-bis[4-(4-maleimide-phenoxy)phenyl]propane, a maleimide compound represented by formula (7), a maleimide compound represented by formula (8), and a maleimide compound represented by formula (9), from the viewpoint of maintaining good storage stability, flexibility, flux activity, hardening property, and low voids, and especially improving melt viscosity.

馬來醯亞胺化合物也可使用市售品,就2,2’-雙[4-(4-馬來醯亞胺基苯氧基)苯基]丙烷而言,可列舉例如:大和化成工業(股)公司製BMI-80(商品名)。就式(6)表示之馬來醯亞胺化合物而言,可列舉例如:大和化成工業(股)公司製BMI-2300(商品名)。就式(7)表示之馬來醯亞胺化合物而言,可列舉例如:K.I化成(股)製BMI-1000P(商品名,式(7)中的n3=14(平均))、K.I化成(股)公司製BMI-650P(商品名,式(7)中的n3=9(平均))、K.I化成(股)公司製BMI-250P(商品名,式(7)中的n3=3~8(平均))、K.I化成(股)公司製CUA-4(商品名,式(7)中的n3=1)等。就式(8)表示之馬來醯亞胺化合物而言,可列舉例如:K.I化成(股)製BMI-70(商品名;雙-(3-乙基-5-甲基-4-馬來醯亞胺基苯基)甲烷)。就式(9)表示之馬來醯亞胺化合物而言,可列舉例如:日本化藥(股)公司製MIR-3000-70MT(商 品名,式(9)中的R13全部為氫原子且n4為1~10之混合物)。就含有式(10)表示之構成單元與位於兩末端的馬來醯亞胺基之馬來醯亞胺化合物而言,可列舉例如:日本化藥(股)公司製MIZ-001(商品名)。 As the maleimide compound, commercial products may be used. For example, 2,2'-bis[4-(4-maleimidophenoxy)phenyl]propane may include BMI-80 (trade name) manufactured by Yamato Chemical Industries, Ltd. For example, the maleimide compound represented by formula (6) may include BMI-2300 (trade name) manufactured by Yamato Chemical Industries, Ltd. For example, the maleimide compound represented by formula (7) may include BMI-1000P (trade name, n 3 = 14 (average) in formula (7)) manufactured by K.I Chemicals Co., Ltd., BMI-650P (trade name, n 3 = 9 (average) in formula (7)) manufactured by K.I Chemicals Co., Ltd., and BMI-700P (trade name, n 3 = 10 (average) in formula (7)) manufactured by K.I Chemicals Co., Ltd. BMI-250P (trade name, n 3 = 3 to 8 (average) in formula (7)) manufactured by K.I Chemical Co., Ltd., CUA-4 (trade name, n 3 = 1 in formula (7)) manufactured by K.I Chemical Co., Ltd., etc. For example, the maleimide compound represented by formula (8) includes BMI-70 (trade name; bis-(3-ethyl-5-methyl-4-maleimidophenyl)methane) manufactured by K.I Chemical Co., Ltd. For example, MIR-3000-70MT (trade name, a mixture in which all R 13 in formula (9) are hydrogen atoms and n 4 is 1 to 10) manufactured by Nippon Kayaku Co., Ltd. Examples of maleimide compounds containing a constituent unit represented by formula (10) and maleimide groups at both ends include MIZ-001 (trade name) manufactured by Nippon Kayaku Co., Ltd.

檸康醯亞胺化合物並無特別限制,可列舉例如:鄰苯雙檸康醯亞胺、間苯雙檸康醯亞胺、對苯雙檸康醯亞胺、4,4-二苯基甲烷雙檸康醯亞胺、2,2-雙[4-(4-檸康醯亞胺基苯氧基)苯基]丙烷、雙(3,5-二甲基-4-檸康醯亞胺基苯基)甲烷、雙(3-乙基-5-甲基-4-檸康醯亞胺基苯基)甲烷、雙(3,5-二乙基-4-檸康醯亞胺基苯基)甲烷、1,3-伸二甲苯基雙(檸康醯亞胺)、N-[3-雙(三甲基矽基)胺基-1-丙基]檸康醯亞胺、N-[3-雙(三乙基矽基)胺基-1-丙基]檸康醯亞胺、N-[3-雙(三苯基矽基)胺基-1-丙基]檸康醯亞胺、N,N’-(間苯二亞甲基)二檸康醯亞胺、N-[3-(亞甲基琥珀醯亞胺基甲基)苄基檸康醯亞胺。檸康醯亞胺化合物可使用1種或混合使用2種以上。 The bisconimide compound is not particularly limited, and examples thereof include o-phenylenediconimide, m-phenylenediconimide, p-phenylenediconimide, 4,4-diphenylmethanediconimide, 2,2-bis[4-(4-coniminophenoxy)phenyl]propane, bis(3,5-dimethyl-4-coniminophenyl)methane, bis(3-ethyl-5-methyl-4-coniminophenyl)methane, bis(3,5-diethyl-4-coniminophenyl)methane, 1,3-diphenylenebis(xylenyl)bis(xylenyl)imide, N-[3-bis(trimethylsilyl)amino-1-propyl]xylenylimide, N-[3-bis(triethylsilyl)amino-1-propyl]xylenylimide, N-[3-bis(triphenylsilyl)amino-1-propyl]xylenylimide, N,N'-(m-xylylene)bis(xylenyl)imide, N-[3-(methylenesuccinimidylmethyl)benzylxylenylimide. The xylenylimide compound may be used alone or in combination of two or more.

本實施形態之薄膜中,化合物(A)的含量並無特別限制,考慮確保安裝後之封裝體的絕緣可靠性及耐熱性之觀點,在薄膜中宜含有10質量%以上且60質量%以下,含有15質量%以上且50質量%以下更佳,含有20質量%以上且40質量%以下再更佳。 In the film of this embodiment, the content of compound (A) is not particularly limited. From the perspective of ensuring the insulation reliability and heat resistance of the package after installation, the content of compound (A) in the film is preferably 10% by mass or more and 60% by mass or less, more preferably 15% by mass or more and 50% by mass or less, and even more preferably 20% by mass or more and 40% by mass or less.

[有機過氧化物(B)] [Organic peroxide (B)]

考慮賦予安裝時的硬化性之觀點,本實施形態之薄膜中含有包含選自於由下式(1)及下式(2)表示之有機過氧化物構成之群組中之至少1種之有機過氧化物(B)。有機過氧化物(B)可單獨使用1種或混合使用2種以上。 From the perspective of providing curability during installation, the film of this embodiment contains at least one organic peroxide (B) selected from the group consisting of organic peroxides represented by the following formula (1) and the following formula (2). The organic peroxide (B) can be used alone or in combination of two or more.

[化45]

Figure 109121914-A0305-02-0027-49
[Chemistry 45]
Figure 109121914-A0305-02-0027-49

式(1)中,R1各自獨立地表示氫原子、甲基、或乙基。 In formula (1), R 1 each independently represents a hydrogen atom, a methyl group, or an ethyl group.

Figure 109121914-A0305-02-0027-50
Figure 109121914-A0305-02-0027-50

式(2)中,R2各自獨立地表示氫原子、甲基、或乙基,X1表示下式(3)或(4)表示之基。 In formula (2), R2 each independently represents a hydrogen atom, a methyl group, or an ethyl group, and X1 represents a group represented by the following formula (3) or (4).

Figure 109121914-A0305-02-0027-101
Figure 109121914-A0305-02-0027-101

式(3)中,R3表示氫原子、甲基、或乙基,R4表示碳數1以上且3以下之伸烷基,R5表示氫原子、或碳數1以上且6以下之烷基。 In formula (3), R 3 represents a hydrogen atom, a methyl group, or an ethyl group, R 4 represents an alkylene group having 1 to 3 carbon atoms, and R 5 represents a hydrogen atom, or an alkyl group having 1 to 6 carbon atoms.

Figure 109121914-A0305-02-0027-51
Figure 109121914-A0305-02-0027-51

式(4)中,R6各自獨立地表示氫原子、甲基、或乙基,X2表示下述通式(a)~(c)表示之基。 In formula (4), R 6 each independently represents a hydrogen atom, a methyl group, or an ethyl group, and X 2 represents a group represented by the following general formulas (a) to (c).

Figure 109121914-A0305-02-0027-52
Figure 109121914-A0305-02-0027-52

式(c)中,n1表示1以上且5以下之整數。 In formula (c), n1 represents an integer greater than or equal to 1 and less than or equal to 5.

本實施形態中,考慮對有機溶劑之溶解性、及抑制薄膜製作時的揮發或熱分解之觀點,有機過氧化物(B)宜含有選自於由過氧化二異丙苯、4,4-二(三級丁基過氧化)戊酸正丁酯、二(2-三級丁基過氧化異丙基)苯、2,5-二甲基-2,5-雙(三級丁基過氧化)-3-己炔、及2,5-二甲基-2,5-雙(三級丁基過氧化)己烷構成之群組中之至少一種。 In this embodiment, considering the solubility in organic solvents and the viewpoint of suppressing volatility or thermal decomposition during film production, the organic peroxide (B) preferably contains at least one selected from the group consisting of diisopropylbenzene peroxide, 4,4-di(tertiary butylperoxy) valerate, di(2-tertiary butylperoxyisopropyl)benzene, 2,5-dimethyl-2,5-bis(tertiary butylperoxy)-3-hexyne, and 2,5-dimethyl-2,5-bis(tertiary butylperoxy)hexane.

本實施形態之薄膜中,有機過氧化物(B)的含量並無特別限制,考慮減少安裝時的揮發分量之觀點,相對於化合物(A)100質量份,宜含有0.01質量份以上且15質量份以下,含有0.05質量份以上且10質量份以下更佳,含有0.1質量份以上且8質量份以下再更佳。 In the film of this embodiment, the content of the organic peroxide (B) is not particularly limited. From the perspective of reducing the volatile amount during installation, it is preferably contained in an amount of 0.01 to 15 parts by mass, more preferably 0.05 to 10 parts by mass, and even more preferably 0.1 to 8 parts by mass, relative to 100 parts by mass of the compound (A).

[咪唑化合物(C)] [Imidazole compound (C)]

考慮賦予安裝時的硬化性之觀點,本實施形態之薄膜中含有下式(5)表示之咪唑化合物(C)。咪唑化合物(C)可單獨使用1種或混合使用2種以上。 From the perspective of providing curability during installation, the film of this embodiment contains an imidazole compound (C) represented by the following formula (5). The imidazole compound (C) can be used alone or in combination of two or more.

Figure 109121914-A0305-02-0028-53
Figure 109121914-A0305-02-0028-53

式(5)中,R7表示甲基、或乙基,R8表示氫原子、碳數1以上且5以下之烷基、芳基、或芳烷基,R9表示氫原子、碳數1以上且5以下之烷基、芳基、或芳烷基。 In formula (5), R7 represents a methyl group or an ethyl group, R8 represents a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, an aryl group, or an aralkyl group, and R9 represents a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, an aryl group, or an aralkyl group.

本實施形態中,考慮對有機溶劑之溶解性及減少安裝時的揮發分量之觀點,咪唑化合物(C)宜為下式(11)表示之咪唑化合物。 In this embodiment, considering the solubility in organic solvents and the reduction of volatility during installation, the imidazole compound (C) is preferably an imidazole compound represented by the following formula (11).

[化51]

Figure 109121914-A0305-02-0029-54
[Chemistry 51]
Figure 109121914-A0305-02-0029-54

式(11)中,R17表示甲基、或乙基,R18表示氫原子、碳數1以上且5以下之烷基、芳基、或芳烷基,R19表示氫原子、或甲基。 In formula (11), R 17 represents a methyl group or an ethyl group, R 18 represents a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, an aryl group, or an aralkyl group, and R 19 represents a hydrogen atom or a methyl group.

本實施形態中,考慮確保安裝時的分子運動性之觀點,咪唑化合物(C)宜為下式(12)表示之咪唑化合物。 In this embodiment, from the perspective of ensuring molecular mobility during packaging, the imidazole compound (C) is preferably an imidazole compound represented by the following formula (12).

Figure 109121914-A0305-02-0029-55
Figure 109121914-A0305-02-0029-55

式(12)中,R20表示甲基、或乙基,R21表示氫原子、甲基、乙基、或苄基,R22表示氫原子、或甲基。 In formula (12), R20 represents a methyl group or an ethyl group, R21 represents a hydrogen atom, a methyl group, an ethyl group or a benzyl group, and R22 represents a hydrogen atom or a methyl group.

本實施形態中,考慮兼顧優良的助熔劑活性及對有機溶劑之溶解性的觀點,咪唑化合物(C)宜包含選自於由1-苄基-2-甲基咪唑、1,2-二甲基咪唑、及2-乙基-4-甲基咪唑構成之群組中之至少一種。 In this embodiment, considering both excellent flux activity and solubility in organic solvents, the imidazole compound (C) preferably includes at least one selected from the group consisting of 1-benzyl-2-methylimidazole, 1,2-dimethylimidazole, and 2-ethyl-4-methylimidazole.

本實施形態之薄膜中,咪唑化合物(C)的含量並無特別限制,考慮兼顧清漆的保存安定性及安裝時的硬化性之觀點,相對於化合物(A)100質量份,宜含有10質量份以下,含有0.1質量份以上且10質量份以下更佳,含有0.5質量份以上且8質量份以下再更佳。 In the film of this embodiment, the content of the imidazole compound (C) is not particularly limited. Considering the storage stability of the varnish and the curability during installation, it is preferably contained in an amount of 10 parts by mass or less, more preferably 0.1 parts by mass or more and 10 parts by mass or less, and even more preferably 0.5 parts by mass or more and 8 parts by mass or less, relative to 100 parts by mass of the compound (A).

[苯并

Figure 109121914-A0305-02-0029-138
化合物(D)] [Benzo
Figure 109121914-A0305-02-0029-138
Compound (D)]

本實施形態之薄膜中,考慮賦予黏接性之觀點,也可含有苯并

Figure 109121914-A0305-02-0030-139
化合物(D)。苯并
Figure 109121914-A0305-02-0030-141
化合物若具有
Figure 109121914-A0305-02-0030-140
環作為基本骨架,則無特別限制。本實施形態中,苯并
Figure 109121914-A0305-02-0030-142
化合物也包含萘并
Figure 109121914-A0305-02-0030-143
化合物等具有多環
Figure 109121914-A0305-02-0030-144
骨架之化合物。本實施形態中,苯并
Figure 109121914-A0305-02-0030-145
化合物(D)可單獨使用1種或混合使用2種以上。本實施形態中,苯并
Figure 109121914-A0305-02-0030-146
化合物(D)宜為下式(13)、下式(14)、下式(15)、及下式(16)表示者。 The film of this embodiment may contain benzophenone from the viewpoint of imparting adhesion.
Figure 109121914-A0305-02-0030-139
Compound (D). Benzo
Figure 109121914-A0305-02-0030-141
If the compound has
Figure 109121914-A0305-02-0030-140
There is no particular limitation on the basic skeleton of benzophenone.
Figure 109121914-A0305-02-0030-142
Compounds also include naphthoxy
Figure 109121914-A0305-02-0030-143
Compounds with polycyclic
Figure 109121914-A0305-02-0030-144
In this embodiment, benzo
Figure 109121914-A0305-02-0030-145
The compound (D) may be used alone or in combination of two or more.
Figure 109121914-A0305-02-0030-146
The compound (D) is preferably represented by the following formula (13), the following formula (14), the following formula (15), or the following formula (16).

Figure 109121914-A0305-02-0030-56
Figure 109121914-A0305-02-0030-56

式(13)中,R23各自獨立地表示芳基、芳烷基、烯基、烷基、或環烷基,R24表示氫原子、芳基、芳烷基、烯基、烷基、環烷基、或下述通式(d)~(w)表示之1~4價之有機基,n5表示1~4之整數。 In formula (13), R23 each independently represents an aryl group, an aralkyl group, an alkenyl group, an alkyl group, or a cycloalkyl group, R24 represents a hydrogen atom, an aryl group, an aralkyl group, an alkenyl group, an alkyl group, a cycloalkyl group, or a 1-4 valent organic group represented by the following general formulae (d) to (w), and n5 represents an integer of 1 to 4.

Figure 109121914-A0305-02-0030-57
Figure 109121914-A0305-02-0030-57

式(14)中,R25各自獨立地表示氫原子、芳基、芳烷基、烯基、烷基、或環烷基,R26表示芳基、芳烷基、烯基、烷基、環烷基、或下述通式(d)~(r)表示之1~4價之有機基,n6表示1~4之整數。 In formula (14), R25 each independently represents a hydrogen atom, an aryl group, an aralkyl group, an alkenyl group, an alkyl group, or a cycloalkyl group; R26 represents an aryl group, an aralkyl group, an alkenyl group, an alkyl group, a cycloalkyl group, or a 1-4 valent organic group represented by the following general formulae (d) to (r); and n6 represents an integer of 1 to 4.

Figure 109121914-A0305-02-0030-60
Figure 109121914-A0305-02-0030-60

式(15)中,R27表示烷基、環烷基、或亦可具有取代基之苯基。 In formula (15), R 27 represents an alkyl group, a cycloalkyl group, or a phenyl group which may have a substituent.

Figure 109121914-A0305-02-0031-61
Figure 109121914-A0305-02-0031-61

式(16)中,R28表示烷基、環烷基、或亦可具有取代基之苯基。 In the formula (16), R 28 represents an alkyl group, a cycloalkyl group, or a phenyl group which may have a substituent.

Figure 109121914-A0305-02-0031-62
Figure 109121914-A0305-02-0031-62

Figure 109121914-A0305-02-0031-63
Figure 109121914-A0305-02-0031-63

Figure 109121914-A0305-02-0031-64
Figure 109121914-A0305-02-0031-64

Figure 109121914-A0305-02-0031-65
Figure 109121914-A0305-02-0031-65

[化61]

Figure 109121914-A0305-02-0032-67
[Chemistry 61]
Figure 109121914-A0305-02-0032-67

Figure 109121914-A0305-02-0032-68
Figure 109121914-A0305-02-0032-68

Figure 109121914-A0305-02-0032-69
Figure 109121914-A0305-02-0032-69

式(d)~(w)中,Ra表示芳基、芳烷基、烯基、烷基、或環烷基,Rb表示氫原子、芳基、芳烷基、烯基、烷基、或環烷基。 In formulae (d) to (w), Ra represents an aryl group, an aralkyl group, an alkenyl group, an alkyl group, or a cycloalkyl group, and Rb represents a hydrogen atom, an aryl group, an aralkyl group, an alkenyl group, an alkyl group, or a cycloalkyl group.

本實施形態中,考慮阻燃性及耐熱性之觀點,苯并

Figure 109121914-A0305-02-0032-147
化合物(D)宜含有選自於由下式(17)及下式(18)表示之化合物構成之群組中之至少1種。 In this embodiment, considering the flame retardancy and heat resistance, benzo
Figure 109121914-A0305-02-0032-147
The compound (D) preferably contains at least one selected from the group consisting of compounds represented by the following formula (17) and the following formula (18).

Figure 109121914-A0305-02-0032-70
Figure 109121914-A0305-02-0032-70

式(17)中,R29各自獨立地表示氫原子、芳基、芳烷基、烯基、烷基、或環烷基,R30各自獨立地表示氫原子、芳基、芳烷基、烯基、烷基、或環烷基,X3 表示伸烷基、下式(19)表示之基、式「-SO2-」表示之基、式「-CO-」表示之基、氧原子、或單鍵。 In formula (17), R 29 each independently represents a hydrogen atom, an aryl group, an aralkyl group, an alkenyl group, an alkyl group, or a cycloalkyl group; R 30 each independently represents a hydrogen atom, an aryl group, an aralkyl group, an alkenyl group, an alkyl group, or a cycloalkyl group; X 3 represents an alkylene group, a group represented by the following formula (19), a group represented by the formula "-SO 2 -", a group represented by the formula "-CO-", an oxygen atom, or a single bond.

Figure 109121914-A0305-02-0033-71
Figure 109121914-A0305-02-0033-71

式(18)中,R31各自獨立地表示氫原子、芳基、芳烷基、烯基、烷基、或環烷基,R32各自獨立地表示氫原子、芳基、芳烷基、烯基、烷基、或環烷基,X4表示伸烷基、下式(19)表示之基、式「-SO2-」表示之基、式「-CO-」表示之基、氧原子、或單鍵。 In formula (18), R 31 each independently represents a hydrogen atom, an aryl group, an aralkyl group, an alkenyl group, an alkyl group, or a cycloalkyl group; R 32 each independently represents a hydrogen atom, an aryl group, an aralkyl group, an alkenyl group, an alkyl group, or a cycloalkyl group; X 4 represents an alkylene group, a group represented by the following formula (19), a group represented by the formula "-SO 2 -", a group represented by the formula "-CO-", an oxygen atom, or a single bond.

Figure 109121914-A0305-02-0033-72
Figure 109121914-A0305-02-0033-72

式(19)中,Y為伸烷基、或具有芳香族環之碳數6以上且30以下之烴基,n7表示0以上之整數,宜表示0以上且5以下之整數。 In formula (19), Y is an alkylene group or a alkyl group having 6 or more and 30 or less carbon atoms and having an aromatic ring, and n7 represents an integer of 0 or more, preferably an integer of 0 or more and 5 or less.

本實施形態中,考慮對有機溶劑之溶解性的觀點,苯并

Figure 109121914-A0305-02-0033-148
化合物(D)宜包含選自於由下式(20)表示之化合物、下式(21)表示之化合物、下式(22)表示之化合物、下式(23)表示之化合物、下式(24)表示之化合物、及下式(25)表示之化合物構成之群組中之至少1種。 In this embodiment, from the viewpoint of solubility in organic solvents, benzo
Figure 109121914-A0305-02-0033-148
Compound (D) preferably comprises at least one selected from the group consisting of a compound represented by the following formula (20), a compound represented by the following formula (21), a compound represented by the following formula (22), a compound represented by the following formula (23), a compound represented by the following formula (24), and a compound represented by the following formula (25).

Figure 109121914-A0305-02-0033-73
Figure 109121914-A0305-02-0033-73

[化68]

Figure 109121914-A0305-02-0034-75
[Chemistry 68]
Figure 109121914-A0305-02-0034-75

Figure 109121914-A0305-02-0034-76
Figure 109121914-A0305-02-0034-76

式(22)中,R33各自獨立地表示氫原子、或碳數1~4之烴基。 In formula (22), R 33 each independently represents a hydrogen atom or a carbon number 1 to 4 alkyl group.

Figure 109121914-A0305-02-0034-77
Figure 109121914-A0305-02-0034-77

Figure 109121914-A0305-02-0034-78
Figure 109121914-A0305-02-0034-78

Figure 109121914-A0305-02-0034-79
Figure 109121914-A0305-02-0034-79

另外,本實施形態中,苯并

Figure 109121914-A0305-02-0034-149
化合物(D)中也可含有由單體聚合而生成的寡聚物等。 In addition, in this embodiment, benzo
Figure 109121914-A0305-02-0034-149
The compound (D) may contain oligomers produced by polymerization of monomers.

本實施形態之薄膜中,苯并

Figure 109121914-A0305-02-0035-150
化合物(D)的含量並無特別限制,考慮兼顧薄膜的黏接性及可撓性之觀點,相對於化合物(A)100質量份,宜含有5質量份以上且60質量份以下,含有10質量份以上且55質量份以下更佳,含有15質量份以上且50質量份以下再更佳。 In the film of this embodiment, benzo
Figure 109121914-A0305-02-0035-150
The content of compound (D) is not particularly limited. From the viewpoint of both the adhesion and flexibility of the film, the content is preferably 5 parts by mass or more and 60 parts by mass or less, more preferably 10 parts by mass or more and 55 parts by mass or less, and even more preferably 15 parts by mass or more and 50 parts by mass or less, relative to 100 parts by mass of compound (A).

[丙烯基化合物(E)] [Propylene compounds (E)]

考慮賦予黏接性及安裝時的硬化性之觀點,本實施形態之薄膜也可含有丙烯基化合物(E)。丙烯基化合物(E)若為含有丙烯基者,則無特別限制。本實施形態中,丙烯基化合物(E)可單獨使用1種或混合使用2種以上。本實施形態中,丙烯基化合物(E)宜在分子內之末端含有下式(26)表示之構成單元。 From the viewpoint of imparting adhesion and hardening during installation, the film of this embodiment may also contain an acryl compound (E). There is no particular limitation on the acryl compound (E) as long as it contains an acryl group. In this embodiment, the acryl compound (E) may be used alone or in combination of two or more. In this embodiment, the acryl compound (E) preferably contains a constituent unit represented by the following formula (26) at the end of the molecule.

Figure 109121914-A0305-02-0035-80
Figure 109121914-A0305-02-0035-80

式(26)中,-*表示原子鍵,並和聚合物之主鏈鍵結。 In formula (26), -* represents an atomic bond and is bonded to the main chain of the polymer.

丙烯基化合物(E)於末端含有反應性高的丙烯基,故在硬化過程中容易發生丙烯基彼此的反應、以及馬來醯亞胺基及檸康醯亞胺基和丙烯基的反應。因此,得到的硬化物之交聯密度會提高,可獲得低空隙性,此外還會改善耐熱性(玻璃 轉移溫度)。又,由於具有極性基,故也會改善晶片及基板等被黏接體和底部填充材料的晶片黏接性。 The acryl compound (E) contains a highly reactive acryl group at the end, so the acryl groups react easily with each other, and the maleimide group and the octanoic acid imide group react with the acryl group during the curing process. Therefore, the crosslinking density of the obtained cured product is increased, low voids can be obtained, and the heat resistance (glass transition temperature) is improved. In addition, since it has a polar group, the chip adhesion of the adherend such as the chip and the substrate and the bottom filling material is also improved.

丙烯基化合物(E)的主鏈之聚合物若含有烯基及羥基,則無特別限制。 There is no particular limitation if the main chain polymer of the acrylic compound (E) contains alkenyl and hydroxyl groups.

烯基並無特別限制,可列舉例如:乙烯基、(甲基)烯丙基、丙烯基、丁烯基、及己烯基。它們之中,宜為丙烯基。 There is no particular limitation on the alkenyl group, and examples thereof include vinyl, (meth)allyl, propenyl, butenyl, and hexenyl. Among them, propenyl is preferred.

聚合物並無特別限制,可列舉例如:雙酚A、四甲基雙酚A、二烯丙基雙酚A、聯苯酚、雙酚F、二烯丙基雙酚F、三苯甲烷型苯酚、肆酚、酚醛清漆型苯酚、甲酚酚醛清漆樹脂、具有聯苯芳烷基骨架之苯酚(聯苯型苯酚)等在酚環具有烯基之聚合物。這些聚合物亦可具有取代基。又,這些聚合物可使用1種或也可適當組合2種以上。 The polymer is not particularly limited, and examples thereof include: bisphenol A, tetramethylbisphenol A, diallylbisphenol A, biphenol, bisphenol F, diallylbisphenol F, triphenylmethane-type phenol, tetraphenol, novolac-type phenol, cresol novolac resin, phenol having a biphenyl aralkyl skeleton (biphenyl-type phenol), and other polymers having alkenyl groups on the phenol ring. These polymers may also have substituents. Moreover, these polymers may be used alone or in combination of two or more.

如此的取代基可列舉:鹵素原子、及直鏈狀或分支狀或環狀之烴基。直鏈狀或分支狀或環狀之烴基中,就取代基而言,宜具有烯基。針對烯基如前所述。 Such substituents include: halogen atoms, and linear, branched, or cyclic hydrocarbon groups. In linear, branched, or cyclic hydrocarbon groups, as substituents, it is preferable to have an alkenyl group. The alkenyl group is as described above.

鹵素原子可列舉:氟原子、氯原子、溴原子、及碘原子等。 Halogen atoms include fluorine atoms, chlorine atoms, bromine atoms, and iodine atoms, etc.

直鏈狀或分支狀之烴基並無特別限制,可列舉例如:甲基、乙基、丙基、異丙基、正丁基、二級丁基、異丁基、三級丁基、正戊基、異戊基、三級戊基、正己基、異己基、二級己基、及三級己基。 There is no particular limitation on the linear or branched alkyl groups, and examples thereof include: methyl, ethyl, propyl, isopropyl, n-butyl, dibutyl, isobutyl, tertiary butyl, n-pentyl, isopentyl, tertiary pentyl, n-hexyl, isohexyl, dihexyl, and tertiary hexyl.

環狀之烴基並無特別限制,可列舉例如:脂肪族環狀烴基及芳香族烴基。脂肪族環狀烴基可列舉例如:環丙基、環丁基、環戊基、環己基、環庚基、環辛基、環癸基、及環十二烷基等單環式脂肪族烴基;雙環[2.2.2]辛基、三環[5.2.1.02,6]癸基、三環[3.3.1.13,7]癸基、四環[6.2.1.13,6.02,7]十二烷基、及金剛烷基等多環式脂肪族烴基。芳香族烴基可列舉例如從苯、聯苯、茀、萘、蒽、及菲等芳香族烴環去除1個氫原子而成的基。 The cyclic alkyl group is not particularly limited, and examples thereof include aliphatic cyclic alkyl groups and aromatic alkyl groups. Examples of aliphatic cyclic alkyl groups include monocyclic aliphatic alkyl groups such as cyclopropyl, cyclobutyl, cyclopentyl, cyclohexyl, cycloheptyl, cyclooctyl, cyclodecyl, and cyclododecyl; and polycyclic aliphatic alkyl groups such as bicyclo[2.2.2]octyl, tricyclo[5.2.1.0 2,6 ]decyl, tricyclo[3.3.1.1 3,7 ]decyl, tetracyclo[6.2.1.1 3,6 .0 2,7 ]dodecyl, and adamantyl. Examples of the aromatic hydrocarbon group include a group obtained by removing one hydrogen atom from an aromatic hydrocarbon ring such as benzene, biphenyl, fluorene, naphthalene, anthracene, and phenanthrene.

丙烯基化合物(E)並無特別限制,考慮在覆晶安裝中防止丙烯基化合物(E)之揮發所導致之空隙的觀點,丙烯基化合物(E)的質量平均分子量以利用凝膠滲透層析(GPC)法所為之聚苯乙烯換算計,宜為300以上且10,000以下,為400以上且7,000以下更佳,為1000以上且3000以下再更佳。 The acrylic compound (E) is not particularly limited. From the perspective of preventing voids caused by the volatility of the acrylic compound (E) during flip chip mounting, the mass average molecular weight of the acrylic compound (E) is preferably 300 or more and 10,000 or less, more preferably 400 or more and 7,000 or less, and even more preferably 1000 or more and 3000 or less, as measured by polystyrene conversion using gel permeation chromatography (GPC).

丙烯基化合物(E)宜包含下式(26-1)表示且分子內的烯基有20%以上為丙烯基之樹脂。本實施形態之薄膜含有如此的丙烯基化合物(E)的話,可獲得優良的耐熱性。 The acryl compound (E) preferably includes a resin represented by the following formula (26-1) in which more than 20% of the alkenyl groups in the molecule are acryl groups. If the film of this embodiment contains such an acryl compound (E), excellent heat resistance can be obtained.

Figure 109121914-A0305-02-0037-81
Figure 109121914-A0305-02-0037-81

式(26-1)中,W各自獨立地表示亦可具有取代基之碳數6~15之烴基。U各自獨立地表示氫原子或碳數2~6之烯基。n1表示重複數,且其平均值為1~20之實數。 In formula (26-1), W each independently represents a alkyl group having 6 to 15 carbon atoms which may have a substituent. U each independently represents a hydrogen atom or an alkenyl group having 2 to 6 carbon atoms. n 1 represents a repeating number, and its average value is a real number of 1 to 20.

式(26-1)中,W各自獨立地表示亦可具有取代基之碳數6~15之烴基。W中的取代基宜含有芳香環,此時,丙烯基化合物(E)宜為後述式(26-2)表示且分子內的烯基有20%以上為丙烯基之樹脂。 In formula (26-1), W each independently represents a alkyl group having 6 to 15 carbon atoms which may have a substituent. The substituent in W preferably contains an aromatic ring. In this case, the propenyl compound (E) is preferably a resin represented by formula (26-2) described below, in which at least 20% of the alkenyl groups in the molecule are propenyl groups.

又,式(26-1)中的W宜為芳香族烴基,為碳數10~15之芳香族烴基更佳。W並無特別限制,可列舉例如下列結構。這些結構可為1種或也可適當組合2種以上。 In addition, W in formula (26-1) is preferably an aromatic alkyl group, and more preferably an aromatic alkyl group having 10 to 15 carbon atoms. W is not particularly limited, and the following structures can be cited as examples. These structures can be one or two or more structures can be appropriately combined.

Figure 109121914-A0305-02-0038-82
Figure 109121914-A0305-02-0038-82

它們之中,考慮耐熱性的觀點,W宜具有烷基型聯苯骨架。 Among them, from the viewpoint of heat resistance, W preferably has an alkyl-type biphenyl skeleton.

式(26-1)中,分子內的烯基有20%以上為丙烯基係指相對於U和末端之丙烯基的合計,其中有20%以上為丙烯基。式(26-1)中,分子內的烯基有40%以上為丙烯基較理想,有60%以上為丙烯基更佳。上限並無特別限制,為100%。分子內的烯基落在前述範圍內的話,可獲得優良的硬化性。 In formula (26-1), more than 20% of the alkenyl groups in the molecule are acryl groups, which means that more than 20% of the total of U and terminal acryl groups are acryl groups. In formula (26-1), more than 40% of the alkenyl groups in the molecule are acryl groups, and more than 60% are acryl groups. There is no particular upper limit, which is 100%. If the alkenyl groups in the molecule fall within the above range, excellent curability can be obtained.

式(26-1)中,丙烯基以外的U各自獨立地表示氫原子或碳數2~6之烯基。碳數2~6之烯基可列舉例如:乙烯基、(甲基)烯丙基、丁烯基、及己烯基。考慮可適當地控制硬化性之觀點,丙烯基以外的U宜為氫原子。 In formula (26-1), U other than the propenyl group independently represents a hydrogen atom or an alkenyl group having 2 to 6 carbon atoms. Examples of alkenyl groups having 2 to 6 carbon atoms include vinyl, (meth)allyl, butenyl, and hexenyl. From the perspective of appropriately controlling the curability, U other than the propenyl group is preferably a hydrogen atom.

式(26-1)中,n1表示重複數,且其平均值為1~20之實數。n1考慮可適當地控制硬化性之觀點,其平均值宜為1~10之實數,其平均值為1~6之實數更佳。 In formula (26-1), n1 represents a repetition number, and its average value is a real number of 1 to 20. From the viewpoint of appropriately controlling the hardenability, n1 preferably has an average value of 1 to 10, and more preferably has an average value of 1 to 6.

式(26-1)中的W含有芳香環作為取代基時,丙烯基化合物(E)宜為下式(26-2)表示且分子內的烯基有20%以上為丙烯基之樹脂。 When W in formula (26-1) contains an aromatic ring as a substituent, the propenyl compound (E) is preferably a resin represented by the following formula (26-2) in which 20% or more of the alkenyl groups in the molecule are propenyl groups.

Figure 109121914-A0305-02-0039-83
Figure 109121914-A0305-02-0039-83

式(26-2)中,Y各自獨立地表示碳數1~6之烴基。X各自獨立地表示氫原子或碳數2~6之烯基。n2表示重複數,且其平均值為1~20之實數。 In formula (26-2), Y each independently represents a alkyl group having 1 to 6 carbon atoms. X each independently represents a hydrogen atom or an alkenyl group having 2 to 6 carbon atoms. n2 represents a repeating number, and its average value is a real number of 1 to 20.

式(26-2)中,Y各自獨立地表示碳數1~6之3價烴基。Y係位於碳數1~6之2價烴基中的1個氫原子經具有烯基之酚環取代而成的結構。Y並無特別限制,宜為碳數1~6且直鏈狀或分支狀或環狀之3價烴基。 In formula (26-2), Y each independently represents a trivalent alkyl group with 1 to 6 carbon atoms. Y is a structure in which a hydrogen atom in a divalent alkyl group with 1 to 6 carbon atoms is substituted by a phenol ring having an alkenyl group. Y is not particularly limited and is preferably a trivalent alkyl group with 1 to 6 carbon atoms in a linear, branched or cyclic form.

直鏈狀之烴基並無特別限制,可列舉例如:亞甲基、伸乙基、伸丙基、伸丁基、伸戊基、及伸己基。支鏈狀之烴基可列舉例如:-C(CH3)2-、-CH(CH3)-、-CH(CH2CH3)-、-C(CH3)(CH2CH3)-、-C(CH3)(CH2CH2CH3)-、及-C(CH2CH3)2-等烷基亞甲基;-CH(CH3)CH2-、-CH(CH3)CH(CH3)-、-C(CH3)2CH2-、-CH(CH2CH3)CH2-、及-C(CH2CH3)2-CH2-等烷基伸乙基。 The linear hydrocarbon group is not particularly limited, and examples thereof include methylene, ethylene, propylene, butylene, pentylene, and hexylene. Examples of branched hydrocarbon groups include alkylmethylene groups such as -C( CH3 ) 2- , -CH( CH3 )-, -CH( CH2CH3 ) -, -C( CH3 )( CH2CH3 ) -, -C(CH3)(CH2CH2CH3 ) - , and -C( CH2CH3 ) 2- ; and alkylethylene groups such as -CH( CH3 ) CH2- , -CH( CH3 )CH( CH3 )-, -C( CH3 ) 2CH2- , -CH( CH2CH3 ) CH2- , and -C( CH2CH3 ) 2 - CH2- .

環狀之烴基並無特別限制,可列舉例如:伸環丙基、伸環丁基、伸環戊基、及伸環己基。 There is no particular limitation on the cyclic hydrocarbon group, and examples thereof include cyclopropylene, cyclobutylene, cyclopentylene, and cyclohexylene.

這些烴基可為1種或也可適當組合2種以上。 These hydroxyl groups may be one type or two or more types may be appropriately combined.

它們之中,考慮可和後述有機過氧化物(B)等其它樹脂獲得良好的相容性之觀點,Y宜為次甲基。 Among them, Y is preferably a methine group from the viewpoint of obtaining good compatibility with other resins such as the organic peroxide (B) described later.

式(26-2)中,分子內的烯基有20%以上為丙烯基係指相對於X和末端之丙烯基的合計,其中有20%以上為丙烯基。式(26-2)中,分子內的烯基有40%以上為丙烯基較理想,有60%以上為丙烯基更佳。上限並無特別限制,為100。分子內的烯基落在前述範圍內的話,可獲得優良的硬化性。 In formula (26-2), more than 20% of the alkenyl groups in the molecule are acryl groups, which means that more than 20% of the total of X and the terminal acryl groups are acryl groups. In formula (26-2), more than 40% of the alkenyl groups in the molecule are acryl groups, and more than 60% are acryl groups. The upper limit is not particularly limited and is 100. If the alkenyl groups in the molecule fall within the above range, excellent curability can be obtained.

式(26-2)中,丙烯基以外的X各自獨立地表示氫原子或碳數2~6之烯基。碳數2~6之烯基如前所述。考慮可適當地控制硬化性之觀點,丙烯基以外的X宜為氫原子。 In formula (26-2), X other than the propenyl group independently represents a hydrogen atom or an alkenyl group having 2 to 6 carbon atoms. The alkenyl group having 2 to 6 carbon atoms is as described above. From the perspective of appropriately controlling the curability, X other than the propenyl group is preferably a hydrogen atom.

式(26-2)中,n2表示重複數,且其平均值為1~20之實數。n2考慮可適當地控制硬化性之觀點,其平均值宜為1~10之實數,其平均值為1~6之實數更佳。 In formula (26-2), n 2 represents a repetition number, and its average value is a real number of 1 to 20. From the viewpoint of appropriately controlling the hardenability, n 2 preferably has an average value of 1 to 10, and more preferably has an average value of 1 to 6.

本實施形態之式(26-1)或式(26-2)表示之丙烯基化合物(E)的製造方法無特別限制,可使用公知的方法製造。 The method for producing the propenyl compound (E) represented by formula (26-1) or formula (26-2) of this embodiment is not particularly limited, and it can be produced using a known method.

製造方法可列舉例如使用酚醛樹脂作為原料之方法。酚醛樹脂並無特別限制,可列舉:雙酚A、四甲基雙酚A、二烯丙基雙酚A、聯苯酚、雙酚F、二烯丙基雙酚F、三苯甲烷型苯酚、肆酚、酚醛清漆型苯酚、甲酚酚醛清漆樹脂、具有聯苯芳烷基骨架之苯酚(聯苯型苯酚)、及具有三苯甲烷骨架之苯酚(三苯甲烷型苯酚)。 The manufacturing method may include, for example, a method using a phenolic resin as a raw material. The phenolic resin is not particularly limited, and may include: bisphenol A, tetramethylbisphenol A, diallylbisphenol A, biphenol, bisphenol F, diallylbisphenol F, triphenylmethane-type phenol, tetraphenol, novolac-type phenol, cresol novolac resin, phenol having a biphenyl aralkyl skeleton (biphenyl-type phenol), and phenol having a triphenylmethane skeleton (triphenylmethane-type phenol).

製造方法可藉由將這些酚醛樹脂中的羥基予以烯丙基化來合成烯丙醚體,其後,使得到的烯丙醚基朝丙烯基醚基進行轉移反應而獲得。又,也可將得到的烯丙醚基利用克來森(Claisen)轉移反應來獲得烯丙基化苯酚,其後依循公知的方法將烯丙基進行轉移反應成為丙烯基來獲得。 The production method can be obtained by allylating the hydroxyl groups in these phenolic resins to synthesize allyl ethers, and then subjecting the obtained allyl ether groups to a transfer reaction to propenyl ether groups. Alternatively, the obtained allyl ether groups can be subjected to a Claisen transfer reaction to obtain allylated phenol, and then subjecting the allyl groups to a transfer reaction to propenyl groups according to a known method to obtain the product.

丙烯基化合物(E)宜為含有下述式(26-3)表示之結構的含丙烯基之樹脂、及含有下述式(26-4)之含丙烯基之樹脂。如此的丙烯基化合物(E)也可使用市售品,例如就含有式(26-3)表示之結構之含丙烯基之樹脂而言,可列舉群榮化學工業(股)製之BPN01-S(商品名,質量平均分子量:1830),就含有下述式(26-4)之含丙烯基之樹脂而言,可列舉群榮化學工業(股)製之TPMP01(商品名,質量平均分子量:2371)。 The propenyl compound (E) is preferably a propenyl-containing resin having a structure represented by the following formula (26-3) and a propenyl-containing resin having a structure represented by the following formula (26-4). Such propenyl compounds (E) may also be commercially available products. For example, BPN01-S (trade name, mass average molecular weight: 1830) manufactured by Qun Rong Chemical Industries, Ltd. may be cited as a propenyl-containing resin having a structure represented by the following formula (26-3), and TPMP01 (trade name, mass average molecular weight: 2371) manufactured by Qun Rong Chemical Industries, Ltd. may be cited as a propenyl-containing resin having a structure represented by the following formula (26-4).

Figure 109121914-A0305-02-0041-84
Figure 109121914-A0305-02-0041-84

上述式(26-3)係n11為1~10的混合物。 The above formula (26-3) is a mixture in which n 11 is 1 to 10.

Figure 109121914-A0305-02-0041-85
Figure 109121914-A0305-02-0041-85

式(26-4)係n12為1~10的混合物。 Formula (26-4) is a mixture in which n 12 is 1 to 10.

本實施形態之薄膜中,丙烯基化合物(E)的含量並無特別限制,考慮兼顧薄膜的可撓性及黏接性之觀點,相對於化合物(A)100質量份,宜含有5質量份以上且50質量份以下。 In the film of this embodiment, the content of the acrylic compound (E) is not particularly limited. Considering the flexibility and adhesion of the film, it is preferably contained in an amount of 5 parts by mass or more and 50 parts by mass or less relative to 100 parts by mass of the compound (A).

[助熔劑成分(F)] [Flux component (F)]

本實施形態之薄膜中,為了在覆晶安裝中使助熔劑活性展現,宜更含有助熔劑成分(F)。助熔劑成分(F)若為分子中具有1個以上之酸性部位的有機化合物,則無特別限制。酸性部位例如宜為磷酸基、酚性羥基、羧基、及磺酸基,在使用本實施形態之薄膜作為預塗型底部填充材料的半導體裝置中,考慮更有效地防止構成接合部之焊料、銅等金屬之遷移及腐蝕的觀點,為酚性羥基或羧基更佳。助熔劑成分(F)可單獨使用1種或可適當混合2種以上來使用。 In order to make the flux active in flip chip mounting, the film of this embodiment preferably contains a flux component (F). There is no particular limitation if the flux component (F) is an organic compound having one or more acidic sites in the molecule. The acidic sites are preferably phosphate groups, phenolic hydroxyl groups, carboxyl groups, and sulfonic acid groups. In semiconductor devices using the film of this embodiment as a pre-coated bottom filling material, phenolic hydroxyl groups or carboxyl groups are more preferred from the perspective of more effectively preventing the migration and corrosion of metals such as solder and copper constituting the joint. The flux component (F) can be used alone or in combination of two or more.

助熔劑成分(F)並無特別限制,為了充分地實施接合部之氧化膜的去除,酸解離常數pKa宜為3.8以上且15.0以下,考慮兼顧清漆及樹脂疊層體的保存安定性與助熔劑活性的觀點,為4.0以上且14.0以下更佳。 There is no particular restriction on the flux component (F). In order to fully remove the oxide film at the joint, the acid dissociation constant pKa is preferably 3.8 or more and 15.0 or less. Considering the storage stability of the varnish and resin laminate and the flux activity, it is more preferably 4.0 or more and 14.0 or less.

本實施形態之薄膜中的助熔劑成分(F)的分子量並無特別限制,考慮防止在覆晶安裝中助熔劑成分(F)於助熔劑活性展現前揮發,亦即防止助熔劑成分(F)在去除接合部的氧化膜前揮發之觀點,分子量宜為200以上,為250以上更佳。為了具有作為酸之運動性並獲得充分的助熔劑活性,分子量宜為8000以下,為1000以下更佳,為500以下再更佳。 The molecular weight of the flux component (F) in the film of this embodiment is not particularly limited. Considering the viewpoint of preventing the flux component (F) from volatilizing before the flux activity is exhibited in flip chip mounting, that is, preventing the flux component (F) from volatilizing before the oxide film of the joint is removed, the molecular weight is preferably 200 or more, preferably 250 or more. In order to have mobility as an acid and obtain sufficient flux activity, the molecular weight is preferably 8000 or less, preferably 1000 or less, and even more preferably 500 or less.

助熔劑成分(F)並無特別限制,可列舉例如:松脂酸(abietic acid)、新松脂酸(neoabietic acid)、去氫松脂酸(dehydroabietic acid)、海松脂酸(pimaric acid)、異海松脂酸(pimaric acid)、長葉松酸(palustric acid)、雙酚酸、二氫松脂酸(dihydroabietic acid)、四氫松脂酸(tetrahydroabietic acid)、松香改性馬來酸樹脂等松香酸改性樹脂、N,N’-雙(2-羥亞苄基)-1,2-丙烷二胺、N,N’-雙(2-羥亞苄基)-1,3-丙烷二胺、及 2-[雙(4-羥苯基)甲基]苯甲酸(phenolphthalin)。這些助熔劑成分(F)考慮溶劑溶解性及保存安定性優良的觀點較理想。 The flux component (F) is not particularly limited, and examples thereof include: abietic acid, neoabietic acid, dehydroabietic acid, pimaric acid, pimaric acid, palustric acid, bisphenolic acid, dihydroabietic acid, tetrahydroabietic acid, rosin-modified maleic acid resin and other rosin-modified maleic acid resins, N,N'-bis(2-hydroxybenzylidene)-1,2-propanediamine, N,N'-bis(2-hydroxybenzylidene)-1,3-propanediamine, and phenolphthalin. These flux components (F) are ideal from the perspective of excellent solvent solubility and storage stability.

它們之中,考慮防止化合物(A)所致之失活的觀點,為去氫松脂酸、雙酚酸、二氫松脂酸、四氫松脂酸、松香改性馬來酸樹脂等松香酸改性樹脂、N,N’-雙(2-羥亞苄基)-1,2-丙烷二胺、及N,N’-雙(2-羥亞苄基)-1,3-丙烷二胺更佳。去氫松脂酸、二氫松脂酸、松香改性馬來酸樹脂等松香酸改性樹脂、N,N’-雙(2-羥亞苄基)-1,2-丙烷二胺、及N,N’-雙(2-羥亞苄基)-1,3-丙烷二胺由於反應性較低,幾乎不會引起和本實施形態之化合物(A)及本實施形態之有機過氧化物(B)之反應,就維持去除氧化膜時所需要之充分的助熔劑活性之觀點更為理想。 Among them, dehydrorosinic acid, bisphenol acid, dihydrorosinic acid, tetrahydrorosinic acid, rosin-modified maleic acid resins, N,N'-bis(2-hydroxybenzylidene)-1,2-propanediamine, and N,N'-bis(2-hydroxybenzylidene)-1,3-propanediamine are more preferred from the viewpoint of preventing deactivation by compound (A). Dehydrorosinic acid, dihydrorosinic acid, rosin-modified maleic acid resin and other rosin-modified resins, N,N'-bis(2-hydroxybenzylidene)-1,2-propanediamine, and N,N'-bis(2-hydroxybenzylidene)-1,3-propanediamine have low reactivity and almost do not cause reaction with the compound (A) of this embodiment and the organic peroxide (B) of this embodiment, and are more ideal from the perspective of maintaining sufficient flux activity required for removing oxide films.

助熔劑成分(F)也可使用市售者,松香改性馬來酸樹脂之例可列舉MALKYDNo32(荒川化學工業(股)製),但不限於此。 The flux component (F) may also be a commercially available one. An example of a rosin-modified maleic acid resin is MALKYD No. 32 (produced by Arakawa Chemical Industries, Ltd.), but the invention is not limited thereto.

本實施形態之薄膜中,助熔劑成分(F)的含量並無特別限制,考慮絕緣可靠性及於安裝時確保充分的助熔劑活性之觀點,相對於化合物(A)100質量份,宜含有5質量份以上且70質量份以下,含有10質量份以上且65質量份以下更佳,含有15質量份以上且60質量份以下再更佳。 In the film of this embodiment, the content of the flux component (F) is not particularly limited. Considering the insulation reliability and ensuring sufficient flux activity during installation, it is preferably contained in an amount of 5 parts by mass or more and 70 parts by mass or less, more preferably 10 parts by mass or more and 65 parts by mass or less, and even more preferably 15 parts by mass or more and 60 parts by mass or less, relative to 100 parts by mass of the compound (A).

[無機填充材(G)] [Inorganic filler (G)]

本實施形態之薄膜中,為了耐燃性的改善、熱傳導率的改善、及熱膨脹率的減少,宜更含有無機填充材(G)。藉由使用無機填充材,可使薄膜等的耐燃性及熱傳導率改善並減少熱膨脹率。 In order to improve the flame retardancy, improve the thermal conductivity, and reduce the thermal expansion rate, the film of this embodiment should preferably contain an inorganic filler (G). By using an inorganic filler, the flame retardancy and thermal conductivity of the film can be improved and the thermal expansion rate can be reduced.

無機填充材(G)的平均粒徑並無特別限制,考慮將本實施形態之薄膜使用作為預塗型底部填充材料時,因應晶片上排列的電極之窄節距化、電極間之窄間隙化的觀點,宜為3μm以下,為1μm以下更佳。其平均粒徑的下限值並無特別限制,例如為10nm。另外,本實施形態中,無機填充材(G)的「平均粒徑」意指無機填充材(G)的中值粒徑。在此,中值粒徑意指以某粒徑作為基準而將粉體的粒度分佈分成2邊時,使粒徑較大側的粒子之體積與粒徑較小側的粒子之體積各佔全部粉體之50%的粒徑。無機填充材(G)的平均粒徑(中值粒徑)係利用濕式雷射繞射-散射法進行測定。 There is no particular restriction on the average particle size of the inorganic filler (G). Considering that the film of this embodiment is used as a pre-coated bottom filling material, it is preferably less than 3 μm, and more preferably less than 1 μm, in view of the narrow pitch of the electrodes arranged on the chip and the narrow gap between the electrodes. The lower limit of the average particle size is not particularly limited, for example, it is 10 nm. In addition, in this embodiment, the "average particle size" of the inorganic filler (G) means the median particle size of the inorganic filler (G). Here, the median particle size means that when the particle size distribution of the powder is divided into two sides based on a certain particle size, the volume of the particles on the larger particle size side and the volume of the particles on the smaller particle size side each account for 50% of the total powder. The average particle size (median particle size) of the inorganic filler (G) is measured using the wet laser diffraction-scattering method.

無機填充材(G)並無特別限制,可列舉例如:天然二氧化矽、熔融二氧化矽、非晶態二氧化矽、及中空二氧化矽等二氧化矽;軟水鋁石(boehmite)、氫氧化鋁、氧化鋁、及氮化鋁等鋁化合物;氧化鎂、及氫氧化鎂等鎂化合物;碳酸鈣、及硫酸鈣等鈣化合物;氧化鉬、及鉬酸鋅等鉬化合物;氮化硼;硫酸鋇;天然滑石、及煅燒滑石等滑石;雲母;短纖維狀玻璃、球狀玻璃、及玻璃微粉(例如E玻璃、T玻璃、D玻璃)等玻璃。又,欲對本實施形態之薄膜賦予導電性或各向異性導電性時,無機填充材(G)也可使用例如:金、銀、鎳、銅、錫合金、及鈀等金屬粒子。 The inorganic filler (G) is not particularly limited, and examples thereof include: silica such as natural silica, fused silica, amorphous silica, and hollow silica; aluminum compounds such as boehmite, aluminum hydroxide, aluminum oxide, and aluminum nitride; magnesium compounds such as magnesium oxide and magnesium hydroxide; calcium compounds such as calcium carbonate and calcium sulfate; molybdenum compounds such as molybdenum oxide and zinc molybdate; boron nitride; barium sulfate; talc such as natural talc and calcined talc; mica; glasses such as short fiber-shaped glass, spherical glass, and glass powder (such as E glass, T glass, D glass). Furthermore, when the thin film of the present embodiment is to be endowed with conductivity or anisotropic conductivity, the inorganic filler (G) may also be metal particles such as gold, silver, nickel, copper, tin alloy, and palladium.

它們之中,考慮本實施形態之薄膜的耐燃性之改善及熱膨脹率的減少之觀點,無機填充材(G)宜包含選自於由二氧化矽、氫氧化鋁、氧化鋁、軟水鋁石(boehmite)、氮化硼、氮化鋁、氧化鎂、及氫氧化鎂構成之群組中之至少1種,為二氧化矽、氧化鋁、氮化硼更佳,其中,為二氧化矽再更佳。二氧化矽可列舉例如:Denka(股)製之SFP-120MC(商品名)、及SFP-130MC(商品名);Admatechs(股)製之0.3μmSX-CM1(商品名)、0.3μmSX-EM1(商品名)、0.3μmSV-EM1(商品名)、 SC1050-MLQ(商品名)、SC2050-MNU(商品名)、SC2050-MTX(商品名)、2.2μmSC6103-SQ(商品名)、SE2053-SQ(商品名)、Y50SZ-AM1(商品名)、YA050C-MJE(商品名)、YA050C-MJF(商品名)、及YA050C-MJA(商品名)。 Among them, from the viewpoint of improving the flame retardancy and reducing the thermal expansion rate of the film of the present embodiment, the inorganic filler (G) preferably includes at least one selected from the group consisting of silica, aluminum hydroxide, aluminum oxide, boehmite, boron nitride, aluminum nitride, magnesium oxide, and magnesium hydroxide, and silica, aluminum oxide, and boron nitride are more preferred, and silica is even more preferred. Examples of silicon dioxide include: SFP-120MC (trade name) and SFP-130MC (trade name) manufactured by Denka Co., Ltd.; 0.3μm SX-CM1 (trade name), 0.3μm SX-EM1 (trade name), 0.3μm SV-EM1 (trade name), SC1050-MLQ (trade name), SC2050-MNU (trade name), SC2050-MTX (trade name), 2.2μm SC6103-SQ (trade name), SE2053-SQ (trade name), Y50SZ-AM1 (trade name), YA050C-MJE (trade name), YA050C-MJF (trade name), and YA050C-MJA (trade name) manufactured by Admatechs Co., Ltd.

這些無機填充材(G)可單獨使用1種或可適當混合2種以上來使用。 These inorganic fillers (G) may be used alone or in combination of two or more.

無機填充材(G)也可使用經矽烷偶聯劑予以表面處理而成者。 Inorganic fillers (G) may also be those that have been surface treated with a silane coupling agent.

矽烷偶聯劑若為通常使用於無機物的表面處理之矽烷偶聯劑,則無特別限制。可列舉例如:乙烯基三甲氧基矽烷、及γ-甲基丙烯醯氧基丙基三甲氧基矽烷等乙烯基矽烷系矽烷偶聯劑;N-苯基-3-胺基丙基三甲氧基矽烷等苯基胺基矽烷系矽烷偶聯劑;三甲氧基苯基矽烷等苯基矽烷系矽烷偶聯劑;咪唑矽烷系矽烷偶聯劑。這些矽烷偶聯劑可單獨使用1種或可適當混合2種以上來使用。 The silane coupling agent is not particularly limited if it is a silane coupling agent commonly used for surface treatment of inorganic substances. Examples include: vinyl silane-based silane coupling agents such as vinyl trimethoxy silane and γ-methacryloyloxypropyl trimethoxy silane; phenyl amino silane-based silane coupling agents such as N-phenyl-3-aminopropyl trimethoxy silane; phenyl silane-based silane coupling agents such as trimethoxyphenyl silane; and imidazole silane-based silane coupling agents. These silane coupling agents may be used alone or in combination of two or more.

本實施形態之薄膜中,無機填充材(G)的含量並無特別限制,考慮兼顧薄膜的耐燃性之改善及熱膨脹率的減少之觀點,相對於化合物(A)100質量份,宜含有300質量份以下,含有20質量份以上且300質量份以下更佳,含有50質量份以上且250質量份以下再更佳。 In the film of this embodiment, the content of the inorganic filler (G) is not particularly limited. Considering the improvement of the flame retardancy of the film and the reduction of the thermal expansion rate, it is preferably contained in an amount of 300 parts by mass or less, more preferably 20 parts by mass or more and 300 parts by mass or less, and even more preferably 50 parts by mass or more and 250 parts by mass or less, relative to 100 parts by mass of the compound (A).

[氫過氧化物(H)] [Hydrogen peroxide (H)]

考慮賦予安裝時的硬化性之觀點,本實施形態之薄膜中也可含有氫過氧化物(H)。氫過氧化物(H)若為過氧化氫的氫原子被有機基取代而成者,則無特別限制。本實施形態中,氫過氧化物(H)可單獨使用1種或混合使用2種以上。 From the perspective of imparting hardening properties during installation, the film of this embodiment may also contain hydroperoxide (H). Hydroperoxide (H) is not particularly limited as long as the hydrogen atom of hydrogen peroxide is substituted by an organic group. In this embodiment, hydroperoxide (H) may be used alone or in combination of two or more.

氫過氧化物(H)可列舉例如:下式(h1)表示之氫過氧化物、下式(h2)表示之氫過氧化物、及下式(h3)表示之氫過氧化物。 Hydroperoxides (H) include, for example, hydroperoxides represented by the following formula (h1), hydroperoxides represented by the following formula (h2), and hydroperoxides represented by the following formula (h3).

Figure 109121914-A0305-02-0046-86
Figure 109121914-A0305-02-0046-86

式(h1)中,R14各自獨立地表示氫原子、或甲基,R15表示氫原子、甲基、異丙基、或三級丁基。 In formula (h1), R 14 each independently represents a hydrogen atom or a methyl group, and R 15 represents a hydrogen atom, a methyl group, an isopropyl group, or a tertiary butyl group.

Figure 109121914-A0305-02-0046-87
Figure 109121914-A0305-02-0046-87

式(h2)中,R16各自獨立地表示氫原子、或甲基,R17表示氫原子、甲基、異丙基、或三級丁基。 In formula (h2), R 16 each independently represents a hydrogen atom or a methyl group, and R 17 represents a hydrogen atom, a methyl group, an isopropyl group, or a tertiary butyl group.

Figure 109121914-A0305-02-0046-88
Figure 109121914-A0305-02-0046-88

式(h3)中,R18各自獨立地表示氫原子、或甲基,R19各自獨立地表示氫原子、或甲基,R20表示氫原子、或甲基。 In formula (h3), R 18 each independently represents a hydrogen atom or a methyl group, R 19 each independently represents a hydrogen atom or a methyl group, and R 20 represents a hydrogen atom or a methyl group.

氫過氧化物(H)的分子量並無特別限制,考慮減少安裝時的揮發分量之觀點,宜為100以上,為130以上更佳。考慮同樣的觀點,氫過氧化物(H)宜包含選自於由對薄荷烷(menthane)過氧化氫、二異丙基苯過氧化氫、異丙苯過氧化氫、1,1,3,3-四甲基丁基過氧化氫、及三級戊基過氧化氫構成之群組中之至少一種。 The molecular weight of the hydroperoxide (H) is not particularly limited. From the perspective of reducing the volatile amount during installation, it is preferably 100 or more, and more preferably 130 or more. From the same perspective, the hydroperoxide (H) preferably includes at least one selected from the group consisting of p-menthane hydroperoxide, diisopropylbenzene hydroperoxide, isopropylbenzene hydroperoxide, 1,1,3,3-tetramethylbutyl hydroperoxide, and tert-amyl hydroperoxide.

本實施形態之薄膜中,氫過氧化物(H)的含量並無特別限制,考慮兼顧安裝時的硬化性及減少揮發分量之觀點,相對於化合物(A)100質量份,宜含有10質量份以下,含有0.01質量份以上且10質量份以下更佳,含有0.1質量份以上且8質量份以下再更佳。 In the film of this embodiment, the content of hydroperoxide (H) is not particularly limited. Considering the curability during installation and the reduction of volatile matter, it is preferably contained in an amount of 10 parts by mass or less, more preferably 0.01 parts by mass or more and 10 parts by mass or less, and even more preferably 0.1 parts by mass or more and 8 parts by mass or less, relative to 100 parts by mass of compound (A).

[其它成分] [Other ingredients]

本實施形態之薄膜除了含有化合物(A)、有機過氧化物(B)、咪唑化合物(C)、苯并

Figure 109121914-A0305-02-0047-151
化合物(D)、丙烯基化合物(E)、助熔劑成分(F)、無機填充材(G)及氫過氧化物(H)之外,也可含有1種或2種以上之其它成分。 The film of this embodiment contains compound (A), organic peroxide (B), imidazole compound (C), benzo
Figure 109121914-A0305-02-0047-151
In addition to the compound (D), the acrylic compound (E), the flux component (F), the inorganic filler (G) and the hydroperoxide (H), one or more other components may be contained.

其它成分並無特別限制,可列舉例如賦予可撓性之成分。賦予可撓性之成分若為可對於含有薄膜之層賦予可撓性之類的成分,則無特別限制可列舉例如本實施形態之化合物(A)、苯并

Figure 109121914-A0305-02-0047-152
化合物(D)、丙烯基化合物(E)及助熔劑成分(F)除外之聚醯亞胺、聚醯胺醯亞胺、聚苯乙烯、聚烯烴、苯乙烯-丁二烯橡膠(SBR)、異戊二烯橡膠(IR)、丁二烯橡膠(BR)、(甲基)丙烯腈丁二烯橡膠(NBR)、聚胺甲酸酯、聚丙烯、(甲基)丙烯酸系寡聚物、(甲基)丙烯酸系聚合物、及聚矽氧樹脂等熱塑性高分子化合物。這些賦予可撓性之成分可單獨使用1種或可適當混合2種以上來使用。 The other components are not particularly limited, and examples thereof include components that impart flexibility. The components that impart flexibility are not particularly limited as long as they can impart flexibility to the layer containing the film, and examples thereof include the compound (A) of this embodiment, benzophenone,
Figure 109121914-A0305-02-0047-152
Thermoplastic polymer compounds such as polyimide, polyamide imide, polystyrene, polyolefin, styrene-butadiene rubber (SBR), isoprene rubber (IR), butadiene rubber (BR), (meth)acrylonitrile butadiene rubber (NBR), polyurethane, polypropylene, (meth)acrylic oligomer, (meth)acrylic polymer, and polysilicone resin, excluding the compound (D), the acrylic compound (E) and the flux component (F). These components imparting flexibility may be used alone or in combination of two or more.

本實施形態之薄膜中,為了樹脂與無機填充材之界面的黏接性之改善及吸濕耐熱性的改善之目的,也可含有矽烷偶聯劑作為其它成分。矽烷偶聯劑可列舉例如:乙烯基三甲氧基矽烷、及γ-甲基丙烯醯氧基丙基三甲氧基矽烷等乙烯基矽烷系矽烷偶聯劑;N-苯基-3-胺基丙基三甲氧基矽烷等苯基胺基矽烷系矽烷偶聯劑;三甲氧基苯基矽烷等苯基矽烷系矽烷偶聯劑;咪唑矽烷系矽烷偶聯劑。這些矽烷偶聯劑可單獨使用1種或可適當混合2種以上來使用。 The film of this embodiment may also contain a silane coupling agent as another component for the purpose of improving the adhesion of the interface between the resin and the inorganic filler and improving the moisture absorption and heat resistance. Examples of the silane coupling agent include: vinyl trimethoxysilane, γ-methacryloyloxypropyl trimethoxysilane and other vinyl silane-based silane coupling agents; N-phenyl-3-aminopropyl trimethoxysilane and other phenylamino silane-based silane coupling agents; trimethoxyphenyl silane and other phenyl silane-based silane coupling agents; imidazole silane-based silane coupling agents. These silane coupling agents may be used alone or in combination of two or more.

使用矽烷偶聯劑時,其含量並無特別限制,考慮吸濕耐熱性的改善及覆晶安裝時之揮發量的減少之觀點,相對於化合物(A)100質量份,宜為0.05質量份以上且20質量份以下。 When a silane coupling agent is used, its content is not particularly limited. From the perspective of improving moisture absorption and heat resistance and reducing volatility during flip chip mounting, it is preferably 0.05 parts by mass or more and 20 parts by mass or less relative to 100 parts by mass of compound (A).

本實施形態之薄膜中,為了疊層體之製造性改善及填充材之分散性等目的,也可含有濕潤分散劑作為其它成分。濕潤分散劑若為通常使用於塗料等的濕潤分散劑,則無特別限制。可列舉例如:BYK Japan(股)製之Disperbyk(註冊商標)-110(商品名)、Disperbyk(註冊商標)-111(商品名)、Disperbyk(註冊商標)-180(商品名)、Disperbyk(註冊商標)-161(商品名)、BYK-W996(商品名)、BYK-W9010(商品名)、及BYK-W903(商品名)。這些濕潤分散劑可單獨使用1種或可適當混合2種以上來使用。 The film of this embodiment may contain a wetting dispersant as another component for the purpose of improving the manufacturability of the laminate and the dispersibility of the filler. There is no particular limitation on the wetting dispersant as long as it is a wetting dispersant commonly used in coatings, etc. Examples include Disperbyk (registered trademark)-110 (trade name), Disperbyk (registered trademark)-111 (trade name), Disperbyk (registered trademark)-180 (trade name), Disperbyk (registered trademark)-161 (trade name), BYK-W996 (trade name), BYK-W9010 (trade name), and BYK-W903 (trade name) manufactured by BYK Japan. These wetting dispersants may be used alone or in combination of two or more.

使用濕潤分散劑時,其含量並無特別限制,考慮疊層體之製造性改善的觀點,相對於無機填充材(G)100質量份,宜設定為0.1質量份以上且5質量份以下,設定為0.5質量份以上且3質量份以下更佳。另外,合併使用2種以上之濕潤分散劑時,它們的合計量宜符合前述比率。 When a wetting dispersant is used, its content is not particularly limited. From the perspective of improving the manufacturability of the laminate, it is preferably set to 0.1 to 5 parts by mass, and more preferably 0.5 to 3 parts by mass, relative to 100 parts by mass of the inorganic filler (G). In addition, when two or more wetting dispersants are used in combination, their total amount should conform to the above ratio.

本實施形態之薄膜中,在不損及所期待的特性之範圍內,因為各種目的,也可含有各種添加劑作為其它成分。添加劑可列舉例如:紫外線吸收劑、抗氧化劑、光聚合起始劑、螢光增白劑、光敏劑、染料、顏料、增黏劑、潤滑劑、消泡劑、整平劑、亮光劑、阻燃劑、及離子捕獲劑。這些添加劑可單獨使用1種或可適當混合2種以上來使用。光聚合起始劑並無特別限制,可列舉例如:烷基苯基酮系光聚合起始劑、醯基氧化膦系光聚合起始劑及二茂鈦系光聚合起始劑。 The film of this embodiment may contain various additives as other components for various purposes within the scope of not damaging the expected properties. The additives include, for example, ultraviolet absorbers, antioxidants, photopolymerization initiators, fluorescent whitening agents, photosensitizers, dyes, pigments, thickeners, lubricants, defoamers, levelers, brighteners, flame retardants, and ion scavengers. These additives may be used alone or in combination of two or more. There is no particular limitation on the photopolymerization initiator, and examples include, for example, alkyl phenyl ketone-based photopolymerization initiators, acyl phosphine oxide-based photopolymerization initiators, and diocene-based photopolymerization initiators.

本實施形態之薄膜中,其它添加劑的含量並無特別限制,通常相對於化合物(A)100質量份,分別為0.01~10質量份。 In the film of this embodiment, the content of other additives is not particularly limited, and is usually 0.01 to 10 parts by mass relative to 100 parts by mass of compound (A).

本實施形態之薄膜由於適合作為預塗型底部填充材料用,故宜為半硬化狀態(B階)。薄膜為半硬化狀態可獲得優良的低空隙性及晶片黏接性。本實施形態中,半硬化狀態(B階)係指薄膜中所含的各成分尚未開始積極地反應(硬化),但薄膜係乾燥狀態,亦即加熱而使溶劑揮發以至無黏著性的程度為止之狀態,也包含不加熱且尚未硬化而僅有溶劑揮發之狀態。本實施形態中,半硬化狀態(B階)的最低熔融黏度通常為50,000Pa.s以下。另外,最低熔融黏度可利用後述實施例所記載之方法進行測定。 The film of this embodiment is suitable for use as a pre-coated bottom filling material, so it is preferably in a semi-hardened state (B stage). The film in a semi-hardened state can obtain excellent low voids and chip adhesion. In this embodiment, the semi-hardened state (B stage) means that the components contained in the film have not yet begun to actively react (harden), but the film is in a dry state, that is, the state in which the solvent is evaporated by heating to the extent that there is no adhesion, and also includes the state in which the solvent is not heated and has not yet hardened but only evaporates. In this embodiment, the minimum melt viscosity of the semi-hardened state (B stage) is usually less than 50,000 Pa. s. In addition, the minimum melt viscosity can be measured using the method described in the embodiment described below.

本實施形態之薄膜的厚度並無特別限制,考慮確保安裝時之連接端子間的底部填充材料之填充性的觀點,宜為10μm以上且100μm以下,為10μm以上且50μm以下更佳。 The thickness of the film of this embodiment is not particularly limited. From the perspective of ensuring the filling of the bottom filling material between the connection terminals during installation, it is preferably greater than 10μm and less than 100μm, and more preferably greater than 10μm and less than 50μm.

[薄膜之製造方法] [Thin film manufacturing method]

本實施形態之薄膜只要可獲得具有前述組成者,則製造方法並無特別限制。本實施形態之薄膜的製造方法例如可藉由適當混合化合物(A)、有機過氧化 物(B)、咪唑化合物(C),並因應需要適當混合苯并

Figure 109121914-A0305-02-0050-153
化合物(D)、丙烯基化合物(E)、助熔劑成分(F)、無機填充材(G)、氫過氧化物(H)、其它成分,其後,製成使這些成分溶解或分散於有機溶劑而成的清漆之形態,並將該清漆塗佈於支持體上以及進行乾燥來獲得。具體的製造方法可參考後述疊層體的製造方法及實施例。本實施形態之薄膜在乾燥後,可從支持體剝離後來使用,也可和支持體一起使用。 The film of the present embodiment is not particularly limited in its production method as long as it can obtain the above-mentioned composition. The film of the present embodiment can be produced by, for example, appropriately mixing the compound (A), the organic peroxide (B), and the imidazole compound (C), and appropriately mixing the benzophenone compound (B) as needed.
Figure 109121914-A0305-02-0050-153
Compound (D), acrylic compound (E), flux component (F), inorganic filler (G), hydroperoxide (H), and other components are prepared, and then these components are dissolved or dispersed in an organic solvent to form a varnish, and the varnish is applied on a support and dried to obtain the film. The specific production method can refer to the production method and embodiment of the laminate described later. The film of this embodiment can be used after being peeled off from the support after drying, or it can be used together with the support.

有機溶劑若為可使前述成分各別適當地溶解或分散且不損及本實施形態之薄膜之期望的效果者,則無特別限制。有機溶劑可列舉例如:甲醇、乙醇、及丙醇等醇類;丙酮、甲乙酮(以下有時略稱為「MEK」)、及甲基異丁基酮等酮類;二甲基乙醯胺、及二甲基甲醯胺等醯胺類;甲苯、及二甲苯等芳香族烴類。這些有機溶劑可單獨使用1種或可適當混合2種以上來使用。 There is no particular limitation on the organic solvent as long as it can properly dissolve or disperse the aforementioned components and does not damage the desired effect of the film of the present embodiment. Examples of organic solvents include: alcohols such as methanol, ethanol, and propanol; ketones such as acetone, methyl ethyl ketone (hereinafter sometimes referred to as "MEK"), and methyl isobutyl ketone; amides such as dimethylacetamide and dimethylformamide; aromatic hydrocarbons such as toluene and xylene. These organic solvents can be used alone or in combination of two or more.

支持體可使用公知者,並無特別限制,宜為樹脂薄膜。樹脂薄膜可列舉例如:聚醯亞胺薄膜、聚醯胺薄膜、聚酯薄膜、聚對苯二甲酸乙二酯(PET)薄膜、聚對苯二甲酸丁二酯(PBT)薄膜、聚丙烯(PP)薄膜、聚乙烯(PE)薄膜、聚萘二甲酸乙二酯薄膜、聚乙烯醇薄膜、及三乙醯基乙酸酯薄膜等。它們之中,宜為PET薄膜。 The support can be a known one without any particular limitation, and is preferably a resin film. Examples of resin films include polyimide film, polyamide film, polyester film, polyethylene terephthalate (PET) film, polybutylene terephthalate (PBT) film, polypropylene (PP) film, polyethylene (PE) film, polyethylene naphthalate film, polyvinyl alcohol film, and triacetyl acetate film. Among them, PET film is preferred.

[疊層體] [Layer]

本實施形態之疊層體具備:支持基材、及疊層於支持基材上之含有本實施形態之薄膜之層。如此的疊層體係本實施形態之薄膜附著於支持基材而得。支持基材並無特別限制,可使用高分子薄膜。可列舉含有就高分子薄膜的材質而言例如為選自於由聚氯乙烯、聚偏二氯乙烯、聚丁烯、聚丁二烯、聚胺甲酸酯、 乙烯-乙酸乙烯酯共聚物、聚對苯二甲酸乙二酯、聚萘二甲酸乙二酯、及聚對苯二甲酸丁二酯等聚酯、聚乙烯、聚丙烯、乙烯-丙烯共聚物、聚甲基戊烯、聚醯亞胺、以及聚醯胺構成之群組中之至少1種以上的樹脂之薄膜、以及將脫模劑塗佈於這些薄膜的表面而成的脫模薄膜。它們之中,宜為聚酯、聚醯亞胺、及聚醯胺,為聚酯的一種之聚對苯二甲酸乙二酯更佳。 The laminate of the present embodiment comprises: a supporting substrate, and a layer containing the film of the present embodiment laminated on the supporting substrate. Such a laminate is obtained by attaching the film of the present embodiment to the supporting substrate. The supporting substrate is not particularly limited, and a polymer film can be used. For example, the material of the polymer film includes a film containing at least one resin selected from the group consisting of polyvinyl chloride, polyvinylidene chloride, polybutylene, polybutadiene, polyurethane, ethylene-vinyl acetate copolymer, polyethylene terephthalate, polyethylene naphthalate, and polyester such as polybutylene terephthalate, polyethylene, polypropylene, ethylene-propylene copolymer, polymethylpentene, polyimide, and polyamide, and a release film formed by applying a release agent on the surface of these films. Among them, polyester, polyimide, and polyamide are preferred, and polyethylene terephthalate, which is a type of polyester, is more preferred.

支持基材的厚度並無特別限制,考慮疊層體的製造性,例如將薄膜塗佈於支持基材時之塗佈厚度的安定性與疊層體的搬運性之觀點,宜為10~100μm。考慮確保製造疊層體時之產量的觀點,支持基板的厚度之下限為12μm以上更佳,為25μm以上再更佳,為30μm以上又更佳。考慮支持基材最終並不會以半導體裝置的構成構件形式存在,而會在步驟的途中剝離的觀點、與疊層體之製造成本的觀點,支持基板的厚度之上限為80μm以下更佳,為50μm以下再更佳。 There is no particular restriction on the thickness of the support substrate. Considering the manufacturability of the laminate, for example, the stability of the coating thickness when the thin film is coated on the support substrate and the transportability of the laminate, it is preferably 10~100μm. Considering the viewpoint of ensuring the yield when manufacturing the laminate, the lower limit of the thickness of the support substrate is preferably 12μm or more, preferably 25μm or more, and even more preferably 30μm or more. Considering that the support substrate will not ultimately exist as a component of the semiconductor device, but will be peeled off during the steps, and the viewpoint of the manufacturing cost of the laminate, the upper limit of the thickness of the support substrate is preferably 80μm or less, and even more preferably 50μm or less.

於支持基材上形成含有本實施形態之薄膜之層(以下也簡稱「薄膜層」)來製造本實施形態之疊層體的方法並無特別限制。如此的製造方法可列舉例如:將使本實施形態之薄膜溶解或分散於有機溶劑而成的清漆塗佈於支持基材的表面,並進行加熱及/或於減壓下進行乾燥,將溶劑去除而使本實施形態之薄膜硬化,並形成薄膜層之方法。乾燥條件並無特別限制,通常以有機溶劑相對於薄膜層之含有比率成為相對於薄膜層的總量(100質量份)為10質量份以下,宜成為5質量份以下的方式使其乾燥。達成該乾燥的條件可取決於清漆中的有機溶劑之種類與摻合量而適當調整。例如,相對於化合物(A)100質量份,含有10~120質量份之甲乙酮的清漆時,大約的標準為於1氣壓下在90~160℃之加熱條件下進行約3~10分鐘的乾燥。 There is no particular limitation on the method of manufacturing a laminate of the present embodiment by forming a layer containing the thin film of the present embodiment on a supporting substrate (hereinafter also referred to as "thin film layer" for short). Such a manufacturing method can be exemplified by applying a varnish obtained by dissolving or dispersing the thin film of the present embodiment in an organic solvent on the surface of a supporting substrate, and heating and/or drying under reduced pressure to remove the solvent and harden the thin film of the present embodiment to form a thin film layer. There is no particular limitation on the drying conditions, and the drying is usually performed in such a manner that the content ratio of the organic solvent relative to the thin film layer becomes 10 parts by mass or less, preferably 5 parts by mass or less, relative to the total amount of the thin film layer (100 parts by mass). The conditions for achieving the drying can be appropriately adjusted depending on the type and amount of the organic solvent in the varnish. For example, when the varnish contains 10 to 120 parts by mass of methyl ethyl ketone relative to 100 parts by mass of compound (A), the standard is to dry for about 3 to 10 minutes under heating conditions of 90 to 160°C at 1 atmosphere.

[附設薄膜層之半導體晶圓、及附設薄膜層之半導體搭載用基板] [Semiconductor wafer with thin film layer, and semiconductor mounting substrate with thin film layer]

本實施形態之附設薄膜層之半導體晶圓具備:半導體晶圓、及疊層於該半導體晶圓之本實施形態之疊層體,且含有薄膜之層係疊層於半導體晶圓。又,本實施形態之附設薄膜層之半導體搭載用基板具備:半導體搭載用基板、及疊層於該半導體搭載用基板之本實施形態之疊層體,且含有薄膜之層係疊層於半導體搭載用基板。 The semiconductor wafer with a thin film layer of the present embodiment comprises: a semiconductor wafer, and a stacking body of the present embodiment stacked on the semiconductor wafer, and the layer containing the thin film is stacked on the semiconductor wafer. In addition, the semiconductor mounting substrate with a thin film layer of the present embodiment comprises: a semiconductor mounting substrate, and a stacking body of the present embodiment stacked on the semiconductor mounting substrate, and the layer containing the thin film is stacked on the semiconductor mounting substrate.

製作本實施形態之附設薄膜層之半導體晶圓的方法並無特別限制,例如可藉由使本實施形態之疊層體的薄膜層相向於半導體晶圓之形成電極的面亦即和基板實施接合的面之方式進行貼合而獲得。又,製作本實施形態之附設薄膜層之半導體搭載用基板的方法並無特別限制,例如可藉由使本實施形態之疊層體的薄膜層相向於半導體搭載用基板之晶片搭載側的面之方式進行貼合而獲得。 There is no particular restriction on the method of manufacturing the semiconductor wafer with the thin film layer of the present embodiment. For example, it can be obtained by laminating the thin film layer of the stacked body of the present embodiment so that it faces the electrode-forming surface of the semiconductor wafer, that is, the surface to be bonded to the substrate. In addition, there is no particular restriction on the method of manufacturing the semiconductor mounting substrate with the thin film layer of the present embodiment. For example, it can be obtained by laminating the thin film layer of the stacked body of the present embodiment so that it faces the chip mounting side surface of the semiconductor mounting substrate.

將本實施形態之疊層體貼合於半導體晶圓或半導體搭載用基板之方法並無特別限制,可適當地使用真空加壓式層合機。此時,宜為對於本實施形態之疊層體介隔橡膠等彈性體進行加壓並貼合之方法。層合條件若為發明所屬技術領域中具有通常知識者所通常使用的條件,則無特別限制,例如於50~140℃之溫度,以1~11kgf/cm2之範圍的接觸壓力,以及在20hPa以下之環境減壓下實施。層合步驟之後也可利用金屬板所為之熱壓製來實施已貼合之疊層體的平滑化。前述層合步驟及平滑化步驟可利用市售的真空加壓式層合機連續地實施。貼附於半導體晶圓或半導體搭載用基板之疊層體在任何場合皆可於晶片之覆晶安裝前實施支持基材的去除。 There is no particular limitation on the method of bonding the stacked body of the present embodiment to a semiconductor wafer or a semiconductor mounting substrate, and a vacuum pressurized laminator can be appropriately used. At this time, it is preferable to pressurize and bond the stacked body of the present embodiment through an elastic body such as rubber. There is no particular limitation on the lamination conditions as long as they are the conditions commonly used by those having ordinary knowledge in the technical field to which the invention belongs. For example, the lamination can be carried out at a temperature of 50 to 140°C, with a contact pressure in the range of 1 to 11 kgf/ cm2 , and in a reduced pressure environment below 20 hPa. After the lamination step, the laminated body can also be smoothed by hot pressing using a metal plate. The above-mentioned lamination step and smoothing step can be continuously implemented using a commercially available vacuum pressure laminator. The stacked body attached to the semiconductor wafer or the semiconductor mounting substrate can be removed from the supporting substrate before the flip-chip mounting of the chip in any case.

[半導體裝置] [Semiconductor devices]

本實施形態之半導體裝置具備:本實施形態之附設薄膜層之半導體晶圓及/或本實施形態之附設薄膜層之半導體搭載用基板。製造本實施形態之半導體裝置的方法並無特別限制,可列舉例如將本實施形態之附設薄膜層之半導體晶圓以研磨等手段進行薄化,以及利用切片鋸等實施單片化,製成附設薄膜層之晶片,再將其搭載於半導體搭載用基板之方法。又,也可將晶片搭載於本實施形態之附設薄膜層之半導體搭載用基板。將附設薄膜層之晶片搭載於半導體搭載用基板的方法及將半導體晶片搭載於附設薄膜層之半導體搭載用基板的方法,可適當地使用和熱壓接工法相對應之覆晶接合器。又,本實施形態為了方便係以將晶片覆晶安裝於半導體搭載用基板的情況進行說明,但將晶片進行覆晶安裝且使用本實施形態之薄膜的對象也可為半導體搭載用基板之外的對象。例如,本實施形態之薄膜也可使用於將晶片搭載到半導體晶圓上之時的半導體晶圓與晶片的接合部、或經由TSV(Through Silicon Via)等實施晶片間連接之晶片疊層體的各晶片間之接合部,任一場合皆可獲得本發明所帶來的優異性。 The semiconductor device of the present embodiment comprises: a semiconductor wafer with a thin film layer of the present embodiment and/or a semiconductor mounting substrate with a thin film layer of the present embodiment. The method of manufacturing the semiconductor device of the present embodiment is not particularly limited, and examples thereof include thinning the semiconductor wafer with a thin film layer of the present embodiment by means of grinding or the like, and singulating the wafer with a thin film layer by means of a slicing saw or the like to produce a chip with a thin film layer, which is then mounted on a semiconductor mounting substrate. Alternatively, the chip may be mounted on the semiconductor mounting substrate with a thin film layer of the present embodiment. The method of mounting a chip with a thin film layer on a semiconductor mounting substrate and the method of mounting a semiconductor chip on a semiconductor mounting substrate with a thin film layer can appropriately use a flip chip bonder corresponding to the hot pressing method. In addition, for convenience, the present embodiment is described in terms of the case where the chip is flip-chip mounted on a semiconductor mounting substrate, but the object for flip-chip mounting the chip and using the thin film of the present embodiment can also be an object other than a semiconductor mounting substrate. For example, the thin film of the present embodiment can also be used in the bonding portion between semiconductor wafers and chips when the chip is mounted on a semiconductor wafer, or in the bonding portion between chips of a chip stack body that implements chip-to-chip connection via TSV (Through Silicon Via), and the superiority brought by the present invention can be obtained in any occasion.

[實施例] [Implementation example]

以下,使用實施例及比較例更具體地說明本實施形態。本實施形態不受下列實施例任何限定。 Hereinafter, the present embodiment will be described in more detail using examples and comparative examples. The present embodiment is not limited in any way by the following examples.

[薄膜及疊層體之製作] [Production of thin films and laminates]

(實施例1) (Implementation Example 1)

合併使用下列4種作為化合物(A)。亦即,準備係以前述式(7)表示且n3為14(平均值)之馬來醯亞胺化合物(BMI-1000P(商品名),K.I化成(股)製)38.47質量份、雙-(3-乙基-5-甲基-4-馬來醯亞胺基苯基)甲烷(BMI-70(商品名),K.I化成(股)製)之MEK溶液(非揮發成分50質量%)11.08質量份(以非揮發成分換算計5.54質量份)、 2,2-雙[4-(4-馬來醯亞胺基苯氧基)苯基]丙烷(BMI-80(商品名),K.I化成(股)製)之MEK溶液(非揮發成分50質量%)22.16質量份(以非揮發成分換算計11.08質量份)、及含有前述式(9)中的R13全部為氫原子之馬來醯亞胺化合物之MEK溶液(MIR-3000-70MT(商品名),日本化藥(股)製,非揮發成分70質量%)64.16質量份(以非揮發成分換算計44.91質量份)。 The following four compounds were used in combination as compound (A). Specifically, 38.47 parts by mass of a maleimide compound represented by the above formula (7) with n 3 being 14 (average value) (BMI-1000P (trade name), manufactured by K.I. Chemicals Co., Ltd.), 11.08 parts by mass (5.54 parts by mass in terms of non-volatile content) of a MEK solution of bis-(3-ethyl-5-methyl-4-maleimidophenyl)methane (BMI-70 (trade name), manufactured by K.I. Chemicals Co., Ltd.) (non-volatile content 50%), 22.16 parts by mass (11.08 parts by mass as non-volatile components) of a MEK solution of 2,2-bis[4-(4-maleimidophenoxy)phenyl]propane (BMI-80 (trade name), manufactured by K.I. Chemicals Co., Ltd.) (non-volatile components 50% by mass), and 64.16 parts by mass (44.91 parts by mass as non-volatile components) of a MEK solution containing a maleimide compound in which all R13 in the above formula (9) are hydrogen atoms (MIR-3000-70MT (trade name), manufactured by Nippon Kayaku Co., Ltd., non-volatile components 70% by mass).

又,將作為苯并

Figure 109121914-A0305-02-0054-154
化合物(D)之P-d型苯并
Figure 109121914-A0305-02-0054-155
(四國化成工業(股)製)之MEK溶液(非揮發成分50質量%)76.94質量份(以非揮發成分換算計38.47質量份)、作為助熔劑成分(F)之松香改性馬來酸樹脂(MALKYDNo32(商品名),荒川化學工業(股)製)之MEK溶液(非揮發成分50質量%)55.38質量份(以非揮發成分換算計27.69質量份)、作為無機填充材(G)之漿體二氧化矽(YA050C-MJE,固體成分50%,平均粒徑:50nm,Admatechs(股)製)276.94質量份(以非揮發成分換算計138.47質量份)、作為有機過氧化物(B)之下式(1-1)表示之有機過氧化物(過氧化二異丙苯,KISHIDA化學(股)製)1.55質量份、及作為咪唑化合物(C)之下式(5-1)表示之咪唑化合物(2E4MZ(商品名),四國化成工業(股)製)1.38質量份和上述4種化合物(A)混合,並使用高速攪拌裝置攪拌40分鐘,獲得清漆。 Also, benzo
Figure 109121914-A0305-02-0054-154
Compound (D) Pd-type benzo
Figure 109121914-A0305-02-0054-155
76.94 parts by mass (38.47 parts by mass as non-volatile component conversion) of MEK solution (50% by mass of non-volatile component) of (manufactured by Shikoku Chemical Industries, Ltd.), 55.38 parts by mass (27.69 parts by mass as non-volatile component conversion) of rosin-modified maleic acid resin (MALKYD No32 (trade name), manufactured by Arakawa Chemical Industries, Ltd.) as flux component (F), slurry silica (YA050C-MJE, solid content 50%, average particle size: 50nm) as inorganic filler (G) m, manufactured by Admatechs Co., Ltd.) 276.94 parts by mass (138.47 parts by mass as non-volatile components), 1.55 parts by mass of an organic peroxide represented by the following formula (1-1) as an organic peroxide (diisopropyl peroxide, manufactured by Kishida Chemical Co., Ltd.), and 1.38 parts by mass of an imidazole compound represented by the following formula (5-1) as an imidazole compound (C) were mixed with the above four compounds (A), and stirred for 40 minutes using a high-speed stirring device to obtain a varnish.

將得到的清漆塗佈於表面塗層有脫模劑之厚度38μm的聚對苯二甲酸乙二酯薄膜(TR1-38(商品名),UNITIKA(股)製),於100℃加熱乾燥5分鐘,獲得薄膜層的厚度為30μm之疊層體。另外,由薄膜的質量算出薄膜中的化合物(A)之含量為32.5質量%。 The obtained varnish was applied to a 38μm thick polyethylene terephthalate film (TR1-38 (trade name), manufactured by UNITIKA Co., Ltd.) with a release agent on the surface, and dried at 100°C for 5 minutes to obtain a laminate with a film layer thickness of 30μm. In addition, the content of compound (A) in the film was calculated from the mass of the film to be 32.5 mass %.

Figure 109121914-A0305-02-0054-89
Figure 109121914-A0305-02-0054-89

Figure 109121914-A0305-02-0055-90
Figure 109121914-A0305-02-0055-90

(實施例2) (Example 2)

將作為咪唑化合物(C)之2E4MZ的摻合量變更為4.15質量份,除此之外,和實施例1同樣地製備清漆,並獲得薄膜層的厚度為30μm之疊層體。 The blending amount of 2E4MZ as the imidazole compound (C) was changed to 4.15 parts by mass. The varnish was prepared in the same manner as in Example 1, and a laminate having a film layer thickness of 30 μm was obtained.

(實施例3) (Implementation Example 3)

就咪唑化合物(C)而言,使用下式(5-2)表示之咪唑化合物(1B2MZ(商品名),四國化成工業(股)製)2.17質量份替換2E4MZ,除此之外,和實施例1同樣地製備清漆,並獲得薄膜層的厚度為30μm之疊層體。 As for the imidazole compound (C), 2.17 parts by mass of an imidazole compound represented by the following formula (5-2) (1B2MZ (trade name), manufactured by Shikoku Chemical Industries, Ltd.) was used to replace 2E4MZ. In addition, a varnish was prepared in the same manner as in Example 1, and a laminate having a film layer thickness of 30 μm was obtained.

Figure 109121914-A0305-02-0055-91
Figure 109121914-A0305-02-0055-91

(實施例4) (Implementation Example 4)

將作為咪唑化合物(C)之1B2MZ的摻合量變更為6.51質量份,除此之外,和實施例3同樣地製備清漆,並獲得薄膜層的厚度為30μm之疊層體。 The blending amount of 1B2MZ as the imidazole compound (C) was changed to 6.51 parts by mass. The varnish was prepared in the same manner as in Example 3, and a laminate having a film layer thickness of 30 μm was obtained.

(實施例5) (Example 5)

就咪唑化合物(C)而言,使用下式(5-3)表示之咪唑化合物(1,2-DMZ(商品名),四國化成工業(股)製)1.20質量份替換2E4MZ,除此之外,和實施例1同樣地製備清漆,並獲得薄膜層的厚度為30μm之疊層體。 As for the imidazole compound (C), 1.20 parts by mass of an imidazole compound represented by the following formula (5-3) (1,2-DMZ (trade name), manufactured by Shikoku Chemical Industries, Ltd.) was used to replace 2E4MZ. In addition, a varnish was prepared in the same manner as in Example 1, and a laminate having a film layer thickness of 30 μm was obtained.

Figure 109121914-A0305-02-0056-92
Figure 109121914-A0305-02-0056-92

(實施例6) (Implementation Example 6)

將作為咪唑化合物(C)之1,2-DMZ的摻合量變更為3.63質量份,除此之外,和實施例5同樣地製備清漆,並獲得薄膜層的厚度為30μm之疊層體。 The blending amount of 1,2-DMZ as the imidazole compound (C) was changed to 3.63 parts by mass. The varnish was prepared in the same manner as in Example 5, and a laminate having a film layer thickness of 30 μm was obtained.

(實施例7) (Implementation Example 7)

將作為有機過氧化物(B)之過氧化二異丙苯的摻合量變更為6.92質量份,除此之外,和實施例2同樣地製備清漆,並獲得薄膜層的厚度為30μm之疊層體。 The blending amount of diisopropylbenzene peroxide as the organic peroxide (B) was changed to 6.92 parts by mass. The varnish was prepared in the same manner as in Example 2, and a laminate having a film layer thickness of 30 μm was obtained.

(實施例8) (Implementation Example 8)

就有機過氧化物(B)而言,使用下式(2-1)表示之有機過氧化物(PERBUTYL P(商品名),日油(股)製)1.55質量份替換過氧化二異丙苯,除此之外,和實施例2同樣地製備清漆,並獲得薄膜層的厚度為30μm之疊層體。 As for the organic peroxide (B), 1.55 parts by weight of an organic peroxide represented by the following formula (2-1) (PERBUTYL P (trade name), manufactured by NOF Corporation) was used to replace diisopropylbenzene peroxide. In addition, a varnish was prepared in the same manner as in Example 2, and a laminate having a film layer thickness of 30 μm was obtained.

Figure 109121914-A0305-02-0057-93
Figure 109121914-A0305-02-0057-93

(實施例9) (Implementation Example 9)

將作為有機過氧化物(B)之PERBUTYL P的摻合量變更為6.92質量份,除此之外,和實施例8同樣地製備清漆,並獲得薄膜層的厚度為30μm之疊層體。 The blending amount of PERBUTYL P as the organic peroxide (B) was changed to 6.92 parts by mass. The varnish was prepared in the same manner as in Example 8, and a laminate having a film layer thickness of 30 μm was obtained.

(實施例10) (Example 10)

就有機過氧化物(B)而言,使用下式(2-2)表示之有機過氧化物(PERHEXA V(商品名),日油(股)製)1.55質量份替換過氧化二異丙苯,除此之外,和實施例2同樣地製備清漆,並獲得薄膜層的厚度為30μm之疊層體。 As for the organic peroxide (B), 1.55 parts by mass of an organic peroxide represented by the following formula (2-2) (PERHEXA V (trade name), manufactured by NOF Corporation) was used to replace diisopropylbenzene peroxide. In addition, a varnish was prepared in the same manner as in Example 2, and a laminate having a film layer thickness of 30 μm was obtained.

Figure 109121914-A0305-02-0057-94
Figure 109121914-A0305-02-0057-94

(實施例11) (Implementation Example 11)

將作為有機過氧化物(B)之PERHEXA V的摻合量變更為6.92質量份,除此之外,和實施例10同樣地製備清漆,並獲得薄膜層的厚度為30μm之疊層體。 The blending amount of PERHEXA V as the organic peroxide (B) was changed to 6.92 parts by mass. The varnish was prepared in the same manner as in Example 10, and a laminate having a film layer thickness of 30 μm was obtained.

(實施例12) (Example 12)

在使用作為化合物(A)之前述4種之中,使用以前述式(6)表示且n2為1~3之馬來醯亞胺化合物(BMI-2300(商品名),大和化成工業(股)公司製)14.29質量份替換MIR-3000-70MT,並將BMI-70的摻合量變更為23.62質量份(以非揮發成分換算),且將BMI-80的摻合量變更為23.62質量份(以非揮發成分換算),除此之外,和實施例2同樣地製備清漆,並獲得薄膜層的厚度為30μm之疊層體。 Among the above four compounds (A), a maleimide compound represented by the above formula (6) and having n2 of 1 to 3 (BMI-2300 (trade name), manufactured by Yamato Chemical Industries, Ltd.) was used in an amount of 14.29 parts by mass in place of MIR-3000-70MT, and the blending amount of BMI-70 was changed to 23.62 parts by mass (calculated as non-volatile components), and the blending amount of BMI-80 was changed to 23.62 parts by mass (calculated as non-volatile components). In addition, a varnish was prepared in the same manner as in Example 2, and a laminate having a film layer thickness of 30 μm was obtained.

(比較例1) (Comparison Example 1)

不使用作為咪唑化合物(C)之2E4MZ,除此之外,和實施例1同樣地製備清漆,並獲得薄膜層的厚度為30μm之疊層體。 Except that 2E4MZ was not used as the imidazole compound (C), a varnish was prepared in the same manner as in Example 1, and a laminate having a film layer thickness of 30 μm was obtained.

(比較例2) (Comparison Example 2)

使用下式(5’-1)表示之咪唑化合物(1B2PZ(商品名),四國化成工業(股)製)2.95質量份替換作為咪唑化合物(C)之2E4MZ,除此之外,和實施例1同樣地製備清漆,並獲得薄膜層的厚度為30μm之疊層體。 The varnish was prepared in the same manner as in Example 1 except that 2.95 parts by mass of an imidazole compound represented by the following formula (5'-1) (1B2PZ (trade name), manufactured by Shikoku Chemical Industries, Ltd.) was used to replace 2E4MZ as the imidazole compound (C), and a laminate having a film layer thickness of 30 μm was obtained.

[化88]

Figure 109121914-A0305-02-0059-95
[Chemistry 88]
Figure 109121914-A0305-02-0059-95

(比較例3) (Comparison Example 3)

將作為咪唑化合物(C)之1B2PZ的摻合量變更為8.86質量份,除此之外,和比較例2同樣地製備清漆,並獲得薄膜層的厚度為30μm之疊層體。 The varnish was prepared in the same manner as in Comparative Example 2 except that the blending amount of 1B2PZ as the imidazole compound (C) was changed to 8.86 parts by mass, and a laminate having a film layer thickness of 30 μm was obtained.

(比較例4) (Comparison Example 4)

使用下式(5’-2)表示之咪唑化合物(2P4MZ(商品名),四國化成工業(股)製)1.99質量份替換作為咪唑化合物(C)之2E4MZ,除此之外,和實施例1同樣地製備清漆,並獲得薄膜層的厚度為30μm之疊層體。 The varnish was prepared in the same manner as in Example 1 except that 1.99 parts by mass of an imidazole compound represented by the following formula (5'-2) (2P4MZ (trade name), manufactured by Shikoku Chemical Industries, Ltd.) was used to replace 2E4MZ as the imidazole compound (C), and a laminate having a film layer thickness of 30 μm was obtained.

Figure 109121914-A0305-02-0059-96
Figure 109121914-A0305-02-0059-96

(比較例5) (Comparison Example 5)

將作為咪唑化合物(C)之2P4MZ的摻合量變更為5.98質量份,除此之外,和比較例4同樣地製備清漆,並獲得薄膜層的厚度為30μm之疊層體。 The varnish was prepared in the same manner as in Comparative Example 4 except that the blending amount of 2P4MZ as the imidazole compound (C) was changed to 5.98 parts by mass, and a laminate having a film layer thickness of 30 μm was obtained.

(比較例6) (Comparison Example 6)

使用下式(5’-3)表示之咪唑化合物(TPIZ(商品名),東京化成工業(股)製)3.74質量份替換作為咪唑化合物(C)之2E4MZ,除此之外,和實施例1同樣地製備清漆,並獲得薄膜層的厚度為30μm之疊層體。 The varnish was prepared in the same manner as in Example 1 except that 3.74 parts by mass of an imidazole compound represented by the following formula (5'-3) (TPIZ (trade name), manufactured by Tokyo Chemical Industry Co., Ltd.) was used to replace 2E4MZ as the imidazole compound (C), and a laminate having a film layer thickness of 30 μm was obtained.

Figure 109121914-A0305-02-0060-97
Figure 109121914-A0305-02-0060-97

(比較例7) (Comparison Example 7)

將作為咪唑化合物(C)之TPIZ的摻合量變更為11.20質量份,除此之外,和比較例6同樣地製備清漆,並獲得薄膜層的厚度為30μm之疊層體。 The varnish was prepared in the same manner as in Comparative Example 6 except that the blending amount of TPIZ as the imidazole compound (C) was changed to 11.20 parts by mass, and a laminate having a film layer thickness of 30 μm was obtained.

(比較例8) (Comparison Example 8)

使用下式(1-4)表示之有機過氧化物(PERBUTYL D(商品名),日油(股)製)1.55質量份替換作為有機過氧化物(B)之過氧化二異丙苯,除此之外,和實施例2同樣地製備清漆,並獲得薄膜層的厚度為30μm之疊層體。 The varnish was prepared in the same manner as in Example 2 except that 1.55 parts by mass of an organic peroxide represented by the following formula (1-4) (PERBUTYL D (trade name), manufactured by NOF Corporation) was used to replace diisopropylbenzene peroxide as the organic peroxide (B), and a laminate having a film layer thickness of 30 μm was obtained.

[化91]

Figure 109121914-A0305-02-0061-98
[Chemistry 91]
Figure 109121914-A0305-02-0061-98

(比較例9) (Comparative Example 9)

使用下式(1-5)表示之氫過氧化物(PERMENTA H(商品名),日油(股)製)1.55質量份替換過氧化二異丙苯,除此之外,和實施例2同樣地製備清漆,並獲得薄膜層的厚度為30μm之疊層體。 1.55 parts by mass of hydroperoxide (PERMENTA H (trade name), manufactured by NOF Corporation) represented by the following formula (1-5) was used to replace diisopropylbenzene peroxide. The varnish was prepared in the same manner as in Example 2, and a laminate having a film layer thickness of 30 μm was obtained.

Figure 109121914-A0305-02-0061-99
Figure 109121914-A0305-02-0061-99

(比較例10) (Comparison Example 10)

不使用作為有機過氧化物(B)之過氧化二異丙苯,除此之外,和實施例2同樣地製備清漆,並獲得薄膜層的厚度為30μm之疊層體。 Except that diisopropylbenzene peroxide was not used as the organic peroxide (B), a varnish was prepared in the same manner as in Example 2, and a laminate having a film layer thickness of 30 μm was obtained.

[疊層體之評價] [Evaluation of the stack]

(1)清漆保存安定性 (1) Storage stability of varnish

於25℃使用B型黏度計(東京儀表(股)製)測定實施例1~12及比較例1~10得到的清漆之黏度(a),再使用B型黏度計測定在密閉容器內於25℃放置1週後之黏度 (b)。利用下式計算經過1週後之黏度變化率,黏度變化率未達10%時記載為AA,為10%以上且未達20%時記載為A,為20%以上且未達40%時記載為B,為40%以上時記載為C,在清漆製作時觀察到清漆的凝膠化時記載為D。結果如表1~2所示。 The viscosity (a) of the varnish obtained in Examples 1 to 12 and Comparative Examples 1 to 10 was measured using a B-type viscometer (manufactured by Tokyo Instruments Co., Ltd.) at 25°C, and the viscosity (b) after being placed in a sealed container at 25°C for one week was measured using a B-type viscometer. The viscosity change rate after one week was calculated using the following formula. When the viscosity change rate was less than 10%, it was recorded as AA, when it was 10% or more and less than 20%, it was recorded as A, when it was 20% or more and less than 40%, it was recorded as B, when it was 40% or more, it was recorded as C, and when gelation of the varnish was observed during the preparation of the varnish, it was recorded as D. The results are shown in Tables 1 to 2.

黏度變化率=[|黏度(b)-黏度(a)|/黏度(a)]×100 Viscosity change rate = [|Viscosity (b) - Viscosity (a)|/Viscosity (a)] × 100

(2)彎曲性 (2)Flexibility

將實施例1~12及比較例1~10得到的疊層體裁斷成5cm×10cm之條狀後,在室溫中,以支持基材之聚對苯二甲酸乙二酯薄膜成為內側的方式捲附於具有預定外徑之金屬管,保持5秒鐘後回復。重複該作業10次後,以目視確認樹脂組成物層是否有裂紋,並實施可撓性之評價。未觀察到樹脂組成物層之裂紋的最小金屬管之外徑為10mm以下時記載為AA,為10mm以上且20mm以下時記載為A,為20mm以上且60mm以下時記載為B,為60mm以上時記載為C。結果如表1~2所示。 The laminated bodies obtained in Examples 1 to 12 and Comparative Examples 1 to 10 were cut into strips of 5 cm × 10 cm, and then rolled onto a metal tube with a predetermined outer diameter at room temperature with the polyethylene terephthalate film supporting the substrate on the inner side, and then returned after 5 seconds. After repeating this operation 10 times, the resin composition layer was visually checked for cracks, and the flexibility was evaluated. The outer diameter of the minimum metal tube in which no cracks were observed in the resin composition layer was recorded as AA when it was less than 10 mm, A when it was greater than 10 mm and less than 20 mm, B when it was greater than 20 mm and less than 60 mm, and C when it was greater than 60 mm. The results are shown in Tables 1 to 2.

(3)助熔劑活性 (3) Flux activity

將實施例1~12及比較例1~10得到的薄膜層粉碎而得的樹脂粉散佈於厚度12μm之電解銅箔(3EC-III(商品名),三井金屬礦業(股)製)的光澤面,並放置直徑0.5mm之焊球(ECO SOLDER(註冊商標)BALL M705(商品名),Sn-3.0Ag-0.5Cu合金,千住金屬工業(股)製)。將其在保持為235℃之加熱板之上加熱1分鐘並於銅箔上使焊料熔融後,以室溫進行冷卻。藉由測定焊球浸潤鋪展至銅箔之焊球的接觸角來評價助熔劑活性。焊球的接觸角係使用數位顯微鏡(KH-7700(商品名),HIROX(股)製),求出銅箔上熔融而浸潤鋪展的焊球之半徑(c)及焊球之高度(d),並利用下式算出接觸角。 The resin powder obtained by crushing the thin film layer obtained in Examples 1 to 12 and Comparative Examples 1 to 10 was spread on the glossy surface of an electrolytic copper foil (3EC-III (trade name), manufactured by Mitsui Metal Mining Co., Ltd.) with a thickness of 12 μm, and a solder ball (ECO SOLDER (registered trademark) BALL M705 (trade name), Sn-3.0Ag-0.5Cu alloy, manufactured by Senju Metal Industries, Ltd.) with a diameter of 0.5 mm was placed. It was heated on a heating plate maintained at 235°C for 1 minute to melt the solder on the copper foil, and then cooled to room temperature. The flux activity was evaluated by measuring the contact angle of the solder ball that was wetted and spread on the copper foil. The contact angle of the solder ball is determined by using a digital microscope (KH-7700 (trade name), manufactured by HIROX Co., Ltd.) to obtain the radius (c) and height (d) of the solder ball that is melted and wetted on the copper foil, and the contact angle is calculated using the following formula.

焊球的接觸角=2arctan[(d)/(c)] Contact angle of solder ball = 2arctan[(d)/(c)]

焊球的接觸角未達1.60弧度時記載為AA,為1.60弧度以上且未達2.00弧度時記載為A,為2.00弧度以上且未達2.20弧度時記載為B,為2.20弧度以上時記載為C。結果如表1~2所示。 When the contact angle of the solder ball is less than 1.60 radians, it is recorded as AA; when it is greater than 1.60 radians and less than 2.00 radians, it is recorded as A; when it is greater than 2.00 radians and less than 2.20 radians, it is recorded as B; when it is greater than 2.20 radians, it is recorded as C. The results are shown in Tables 1 and 2.

(4)硬化性 (4) Hardening

將實施例1~12及比較例1~10得到的疊層體中的薄膜層粉碎而得的樹脂粉使用差示掃描熱量測定裝置(Q100(商品名),TA Instruments(股)製),以昇溫速度10℃/min的條件測定30℃~350℃之範圍內的放熱量。145℃時的放熱量(W/g)為0.04W/g以上時記載為AA,為0.03W/g以上且未達0.04W/g時記載為A,為0.02W/g以上且未達0.03W/g時記載為B,未達0.02W/g時記載為C。結果如表1~2所示。 The resin powder obtained by crushing the thin film layer in the laminate obtained in Examples 1 to 12 and Comparative Examples 1 to 10 was measured for heat release in the range of 30°C to 350°C at a temperature increase rate of 10°C/min using a differential scanning calorimeter (Q100 (trade name), manufactured by TA Instruments). When the heat release (W/g) at 145°C is 0.04W/g or more, it is recorded as AA, when it is 0.03W/g or more and less than 0.04W/g, it is recorded as A, when it is 0.02W/g or more and less than 0.03W/g, it is recorded as B, and when it is less than 0.02W/g, it is recorded as C. The results are shown in Tables 1 to 2.

(5)空隙 (5) Gap

將實施例1~12及比較例1~10得到的疊層體裁切成8mm×8mm之正方形並層合於評價用基板上之後,使用覆晶接合器(LFB-2301(商品名),新川(股)製),以載台溫度70℃、黏合頭溫度260℃、荷重50N、時間6秒之條件,將在電極具有由銅與焊料構成的Cu柱之半導體晶片進行熱壓接並實施安裝。安裝後的樣本使用超音波探傷圖像化裝置(μ-SDS(商品名),KRAUTKRAMER JAPAN(股)製),確認半導體晶片安裝部的範圍內之薄膜層是否有空隙。空隙的比例未達10%時記載為AA,未達15%且為10%以上時記載為A,未達30%且為15%以上時記載為B,為30%以上時記載為C。結果如表1~2所示。 After the laminated bodies obtained in Examples 1 to 12 and Comparative Examples 1 to 10 were cut into 8 mm × 8 mm squares and laminated on an evaluation substrate, a semiconductor chip having a Cu column composed of copper and solder at the electrode was thermally pressed and mounted using a flip chip bonder (LFB-2301 (trade name), manufactured by Shinkawa Co., Ltd.) at a stage temperature of 70°C, a bonding head temperature of 260°C, a load of 50 N, and a time of 6 seconds. The mounted samples were checked for voids in the thin film layer within the range of the semiconductor chip mounting portion using an ultrasonic flaw detection imaging device (μ-SDS (trade name), manufactured by KRAUTKRAMER JAPAN Co., Ltd.). When the void ratio is less than 10%, it is recorded as AA; when it is less than 15% and 10% or more, it is recorded as A; when it is less than 30% and 15% or more, it is recorded as B; when it is more than 30%, it is recorded as C. The results are shown in Tables 1 and 2.

(6)最低熔融黏度 (6) Minimum melt viscosity

量取實施例1~12及比較例1~10得到的薄膜層粉碎而得的樹脂粉1g,使用錠劑成形器(SSP-10A(商品名),島津製作所(股)製),以壓力20kN、時間5分鐘之條 件,成形為直徑25mm、厚度1.5mm之錠片狀,並使用流變儀(ARES-G2(商品名),TA Instruments(股)製),以昇溫速度10℃/min的條件,測定40℃~260℃之範圍內的黏度。最低熔融黏度為5000Pa.s以上且未達15000Pa.s時記載為AA,最低熔融黏度為15000Pa.s以上且未達20000Pa.s或為1000Pa.s以上且未達5000Pa.s時記載為A,最低熔融黏度為20000Pa.s以上且未達25000Pa.s或為100Pa.s以上且未達1000Pa.s時記載為B,最低熔融黏度為25000Pa.s以上或未達100Pa.s時記載為C。結果如表1~2所示。 1 g of the resin powder obtained by crushing the film layer obtained in Examples 1 to 12 and Comparative Examples 1 to 10 was weighed and formed into a tablet with a diameter of 25 mm and a thickness of 1.5 mm using a tablet former (SSP-10A (trade name), manufactured by Shimadzu Corporation) at a pressure of 20 kN and a time of 5 minutes. The viscosity was measured in the range of 40°C to 260°C using a rheometer (ARES-G2 (trade name), manufactured by TA Instruments) at a temperature increase rate of 10°C/min. The lowest melt viscosity was recorded as AA when it was 5000 Pa.s or more and less than 15000 Pa.s, and the lowest melt viscosity was recorded as AA when it was 15000 Pa.s or more and less than 20000 Pa.s or 1000 Pa.s. When the minimum melt viscosity is above 20000Pa.s and below 25000Pa.s or above 100Pa.s and below 1000Pa.s, it is recorded as A; when the minimum melt viscosity is above 25000Pa.s or below 100Pa.s, it is recorded as B; when the minimum melt viscosity is above 25000Pa.s or below 100Pa.s, it is recorded as C. The results are shown in Tables 1~2.

Figure 109121914-A0305-02-0064-58
Figure 109121914-A0305-02-0064-58

[表2]

Figure 109121914-A0305-02-0065-59
[Table 2]
Figure 109121914-A0305-02-0065-59

本申請案係基於2019年6月28日提申之日本國專利申請案(日本特願2019-122352號)者,並將其內容援引於此作為參照。 This application is based on a Japanese patent application filed on June 28, 2019 (Japanese Patent Application No. 2019-122352), and its contents are incorporated herein by reference.

[產業上利用性] [Industrial applicability]

本實施形態之薄膜由於保存安定性、可撓性、助熔劑活性、硬化性、低空隙性、熔融黏度等各種物性之平衡優良,故適合作為預塗型底部填充材料。又,本實施形態之薄膜由於助熔劑活性優良,故可在利用晶片與基板之接合、晶片與半導體晶圓之接合、晶片與晶片之接合而得的疊層體中賦予可耐受長期使用之高可靠性。 The film of this embodiment is suitable as a pre-coating bottom filling material because of its excellent balance of various physical properties such as storage stability, flexibility, flux activity, curability, low voids, and melt viscosity. In addition, the film of this embodiment has excellent flux activity, so it can be used in the stacked body obtained by bonding the chip to the substrate, bonding the chip to the semiconductor wafer, and bonding the chip to the chip to provide high reliability that can withstand long-term use.

Figure 109121914-A0305-02-0002-160
Figure 109121914-A0305-02-0002-160

Claims (27)

一種薄膜形態之預塗型底部填充材料,該薄膜含有:化合物(A),包含選自於由馬來醯亞胺化合物及檸康醯亞胺化合物構成之群組中之至少1種,有機過氧化物(B),包含選自於由下式(1)及下式(2)表示之有機過氧化物構成之群組中之至少1種,及咪唑化合物(C),以式(5)表示;該化合物(A)的含量在該薄膜中為10質量%以上且60質量%以下,該有機過氧化物(B)的含量相對於化合物(A)100質量份,為0.01質量份以上且15質量份以下,該咪唑化合物(C)的含量相對於該化合物(A)100質量份,為10質量份以下;
Figure 109121914-A0305-02-0066-105
式(1)中,R1各自獨立地表示氫原子、甲基、或乙基;
Figure 109121914-A0305-02-0066-103
式(2)中,R2各自獨立地表示氫原子、甲基、或乙基,X1表示下式(3)或(4)表示之基;
Figure 109121914-A0305-02-0066-163
式(3)中,R3表示氫原子、甲基、或乙基,R4表示碳數1以上且3以下之伸烷基,R5表示氫原子、或碳數1以上且6以下之烷基;
Figure 109121914-A0305-02-0067-107
式(4)中,R6各自獨立地表示氫原子、甲基、或乙基,X2表示下述通式(a)~(c)表示之基;
Figure 109121914-A0305-02-0067-106
式(c)中,n1表示1以上且5以下之整數;
Figure 109121914-A0305-02-0067-108
式(5)中,R7表示甲基、或乙基,R8表示氫原子、碳數1以上且5以下之烷基、芳基、或芳烷基,R9表示氫原子、碳數1以上且5以下之烷基、芳基、或芳烷基。
A pre-coated bottom filling material in the form of a film, the film comprising: a compound (A) comprising at least one selected from the group consisting of maleimide compounds and oxadiazine compounds, an organic peroxide (B) comprising at least one selected from the group consisting of organic peroxides represented by the following formula (1) and the following formula (2), and an imidazole compound (C) represented by formula (5); the content of the compound (A) in the film is 10 mass % or more and 60 mass % or less, the content of the organic peroxide (B) is 0.01 mass part or more and 15 mass parts or less relative to 100 mass parts of the compound (A), and the content of the imidazole compound (C) is 10 mass parts or less relative to 100 mass parts of the compound (A);
Figure 109121914-A0305-02-0066-105
In formula (1), R 1 each independently represents a hydrogen atom, a methyl group, or an ethyl group;
Figure 109121914-A0305-02-0066-103
In formula (2), R2 each independently represents a hydrogen atom, a methyl group, or an ethyl group, and X1 represents a group represented by the following formula (3) or (4);
Figure 109121914-A0305-02-0066-163
In formula (3), R 3 represents a hydrogen atom, a methyl group, or an ethyl group, R 4 represents an alkylene group having 1 to 3 carbon atoms, and R 5 represents a hydrogen atom or an alkyl group having 1 to 6 carbon atoms;
Figure 109121914-A0305-02-0067-107
In formula (4), R 6 each independently represents a hydrogen atom, a methyl group, or an ethyl group, and X 2 represents a group represented by the following general formulas (a) to (c);
Figure 109121914-A0305-02-0067-106
In formula (c), n 1 represents an integer greater than or equal to 1 and less than or equal to 5;
Figure 109121914-A0305-02-0067-108
In formula (5), R7 represents a methyl group or an ethyl group, R8 represents a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, an aryl group, or an aralkyl group, and R9 represents a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, an aryl group, or an aralkyl group.
如請求項1之薄膜形態之預塗型底部填充材料,其中,該化合物(A)包含選自於由2,2’-雙[4-(4-馬來醯亞胺基苯氧基)苯基]丙烷、1,2-雙(馬來醯亞胺基)乙烷、1,4-雙(馬來醯亞胺基)丁烷、1,6-雙(馬來醯亞胺基)己烷、N,N’-1,3-伸苯基二馬來醯亞胺、N,N’-1,4-伸苯基二馬來醯亞胺、N-苯基馬來醯亞胺、下式(6)表示之馬來醯亞胺化合物、下式(7)表示之馬來醯亞胺化合物、下式(8)表示之馬來醯亞胺化合物、下式(9)表示之馬來醯亞胺化合物、及含有下式(10)表示之構成單元與位於兩末端的馬來醯亞胺基之雙馬來醯亞胺化合物構成之群組中之至少1種;
Figure 109121914-A0305-02-0067-110
式(6)中,R10各自獨立地表示氫原子、或甲基,n2表示1以上之整數;
Figure 109121914-A0305-02-0068-111
式(7)中,n3表示1以上且30以下之整數;
Figure 109121914-A0305-02-0068-112
式(8)中,R11各自獨立地表示氫原子、甲基、或乙基,R12各自獨立地表示氫原子、或甲基;
Figure 109121914-A0305-02-0068-113
式(9)中,R13各自獨立地表示氫原子、碳數1~5之烷基、或苯基,n4表示1以上且10以下之整數;
Figure 109121914-A0305-02-0068-114
式(10)中,R14表示碳數1以上且16以下之直鏈狀或分支狀之伸烷基、或碳數2以上且16以下之直鏈狀或分支狀之伸烯基,R15表示碳數1以上且16以下之直鏈狀或分支狀之伸烷基、或碳數2以上且16以下之直鏈狀或分支狀之伸烯基,R16 各自獨立地表示氫原子、碳數1以上且16以下之直鏈狀或分支狀之烷基、或碳數2以上且16以下之直鏈狀或分支狀之烯基,n5表示1以上且10以下之整數。
The pre-coated bottom filling material in the form of a thin film as claimed in claim 1, wherein the compound (A) comprises a compound selected from 2,2'-bis[4-(4-maleimidophenoxy)phenyl]propane, 1,2-bis(maleimido)ethane, 1,4-bis(maleimido)butane, 1,6-bis(maleimido)hexane, N,N'-1,3-phenylene dimalimidamide, N,N'-1,4 - at least one selected from the group consisting of phenylene dimaleenide, N-phenylmaleimide, a maleimide compound represented by the following formula (6), a maleimide compound represented by the following formula (7), a maleimide compound represented by the following formula (8), a maleimide compound represented by the following formula (9), and a bismaleimide compound having a constituent unit represented by the following formula (10) and maleimide groups at both ends;
Figure 109121914-A0305-02-0067-110
In formula (6), R 10 each independently represents a hydrogen atom or a methyl group, and n 2 represents an integer greater than 1;
Figure 109121914-A0305-02-0068-111
In formula (7), n 3 represents an integer greater than or equal to 1 and less than or equal to 30;
Figure 109121914-A0305-02-0068-112
In formula (8), R 11 each independently represents a hydrogen atom, a methyl group, or an ethyl group, and R 12 each independently represents a hydrogen atom, or a methyl group;
Figure 109121914-A0305-02-0068-113
In formula (9), R 13 each independently represents a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a phenyl group, and n 4 represents an integer of 1 to 10;
Figure 109121914-A0305-02-0068-114
In formula (10), R14 represents a linear or branched alkylene group having 1 to 16 carbon atoms, or a linear or branched alkenylene group having 2 to 16 carbon atoms; R15 represents a linear or branched alkylene group having 1 to 16 carbon atoms, or a linear or branched alkenylene group having 2 to 16 carbon atoms; R16 each independently represents a hydrogen atom, a linear or branched alkylene group having 1 to 16 carbon atoms, or a linear or branched alkenylene group having 2 to 16 carbon atoms; and n5 represents an integer of 1 to 10.
如請求項2之薄膜形態之預塗型底部填充材料,其中,該化合物(A)包含選自於由2,2’-雙[4-(4-馬來醯亞胺基苯氧基)苯基]丙烷、該式(6)表示之馬來醯亞胺化合物、該式(7)表示之馬來醯亞胺化合物、該式(8)表示之馬來醯亞胺化合物、該式(9)表示之馬來醯亞胺化合物、及含有該式(10)表示之構成單元與位於兩末端的馬來醯亞胺基之雙馬來醯亞胺化合物構成之群組中之至少1種。 A pre-coated bottom filling material in the form of a thin film as claimed in claim 2, wherein the compound (A) comprises at least one selected from the group consisting of 2,2'-bis[4-(4-maleimide phenoxy)phenyl]propane, a maleimide compound represented by the formula (6), a maleimide compound represented by the formula (7), a maleimide compound represented by the formula (8), a maleimide compound represented by the formula (9), and a bismaleimide compound containing a constituent unit represented by the formula (10) and maleimide groups at both ends. 如請求項1之薄膜形態之預塗型底部填充材料,其中,該有機過氧化物(B)包含選自於由過氧化二異丙苯、4,4-二(三級丁基過氧化)戊酸正丁酯、二(2-三級丁基過氧化異丙基)苯、2,5-二甲基-2,5-雙(三級丁基過氧化)-3-己炔、及2,5-二甲基-2,5-雙(三級丁基過氧化)己烷構成之群組中之至少一種。 The pre-coated bottom filling material in the form of a thin film as claimed in claim 1, wherein the organic peroxide (B) comprises at least one selected from the group consisting of diisopropylbenzene peroxide, 4,4-di(tertiary butylperoxy) valerate, di(2-tertiary butylperoxyisopropyl)benzene, 2,5-dimethyl-2,5-bis(tertiary butylperoxy)-3-hexyne, and 2,5-dimethyl-2,5-bis(tertiary butylperoxy)hexane. 如請求項1之薄膜形態之預塗型底部填充材料,其中,該咪唑化合物(C)為下式(11)表示之咪唑化合物;
Figure 109121914-A0305-02-0069-115
式(11)中,R17表示甲基、或乙基,R18表示氫原子、碳數1以上且5以下之烷基、芳基、或芳烷基,R19表示氫原子、或甲基。
The pre-coated bottom filling material in the form of a thin film as claimed in claim 1, wherein the imidazole compound (C) is an imidazole compound represented by the following formula (11);
Figure 109121914-A0305-02-0069-115
In formula (11), R 17 represents a methyl group or an ethyl group, R 18 represents a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, an aryl group, or an aralkyl group, and R 19 represents a hydrogen atom or a methyl group.
如請求項5之薄膜形態之預塗型底部填充材料,其中,該咪唑化合物(C)為下式(12)表示之咪唑化合物;
Figure 109121914-A0305-02-0070-116
式(12)中,R20表示甲基、或乙基,R21表示氫原子、甲基、乙基、或苄基,R22表示氫原子、或甲基。
The pre-coated bottom filling material in the form of a thin film as claimed in claim 5, wherein the imidazole compound (C) is an imidazole compound represented by the following formula (12);
Figure 109121914-A0305-02-0070-116
In formula (12), R20 represents a methyl group or an ethyl group, R21 represents a hydrogen atom, a methyl group, an ethyl group or a benzyl group, and R22 represents a hydrogen atom or a methyl group.
如請求項5之薄膜形態之預塗型底部填充材料,其中,該咪唑化合物(C)包含選自於由1-苄基-2-甲基咪唑、1,2-二甲基咪唑、及2-乙基-4-甲基咪唑構成之群組中之至少一種。 A pre-coated bottom filling material in the form of a thin film as claimed in claim 5, wherein the imidazole compound (C) comprises at least one selected from the group consisting of 1-benzyl-2-methylimidazole, 1,2-dimethylimidazole, and 2-ethyl-4-methylimidazole. 如請求項1之薄膜形態之預塗型底部填充材料,更含有下式(13)、下式(14)、下式(15)、及下式(16)表示之苯并
Figure 109121914-A0305-02-0070-156
化合物(D);
Figure 109121914-A0305-02-0070-117
式(13)中,R23各自獨立地表示芳基、芳烷基、烯基、烷基、或環烷基,R24表示氫原子、芳基、芳烷基、烯基、烷基、環烷基、或下述通式(d)~(w)表示之1~4價之有機基,n5表示1~4之整數;
Figure 109121914-A0305-02-0070-118
式(14)中,R25各自獨立地表示氫原子、芳基、芳烷基、烯基、烷基、或環烷基,R26表示芳基、芳烷基、烯基、烷基、環烷基、或下述通式(d)~(r)表示之1~4價之有機基,n6表示1~4之整數;
Figure 109121914-A0305-02-0071-119
式(15)中,R27表示烷基、環烷基、或亦可具有取代基之苯基;
Figure 109121914-A0305-02-0071-121
式(16)中,R28表示烷基、環烷基、或亦可具有取代基之苯基;
Figure 109121914-A0305-02-0071-124
Figure 109121914-A0305-02-0072-125
式(d)~(w)中,Ra表示芳基、芳烷基、烯基、烷基、或環烷基,Rb表示氫原子、芳基、芳烷基、烯基、烷基、或環烷基。
The pre-coated bottom filling material in the form of a thin film as claimed in claim 1 further contains benzo(13), (14), (15), and (16) represented by the following formulas:
Figure 109121914-A0305-02-0070-156
Compound (D);
Figure 109121914-A0305-02-0070-117
In formula (13), R23 each independently represents an aryl group, an aralkyl group, an alkenyl group, an alkyl group, or a cycloalkyl group, R24 represents a hydrogen atom, an aryl group, an aralkyl group, an alkenyl group, an alkyl group, a cycloalkyl group, or a 1-4 valent organic group represented by the following general formulae (d) to (w), and n5 represents an integer of 1 to 4;
Figure 109121914-A0305-02-0070-118
In formula (14), R25 each independently represents a hydrogen atom, an aryl group, an aralkyl group, an alkenyl group, an alkyl group, or a cycloalkyl group; R26 represents an aryl group, an aralkyl group, an alkenyl group, an alkyl group, a cycloalkyl group, or a 1-4 valent organic group represented by the following general formulas (d) to (r); and n6 represents an integer of 1 to 4;
Figure 109121914-A0305-02-0071-119
In formula (15), R 27 represents an alkyl group, a cycloalkyl group, or a phenyl group which may have a substituent;
Figure 109121914-A0305-02-0071-121
In formula (16), R 28 represents an alkyl group, a cycloalkyl group, or a phenyl group which may have a substituent;
Figure 109121914-A0305-02-0071-124
Figure 109121914-A0305-02-0072-125
In formulae (d) to (w), Ra represents an aryl group, an aralkyl group, an alkenyl group, an alkyl group, or a cycloalkyl group, and Rb represents a hydrogen atom, an aryl group, an aralkyl group, an alkenyl group, an alkyl group, or a cycloalkyl group.
如請求項8之薄膜形態之預塗型底部填充材料,其中,該苯并
Figure 109121914-A0305-02-0072-157
化合物(D)包含選自於由下式(17)及下式(18)表示之化合物構成之群組中之至少1種;
Figure 109121914-A0305-02-0072-127
式(17)中,R29各自獨立地表示氫原子、芳基、芳烷基、烯基、烷基、或環烷基,R30各自獨立地表示氫原子、芳基、芳烷基、烯基、烷基、或環烷基,X3表示伸烷基、下式(19)表示之基、式「-SO2-」表示之基、式「-CO-」表示之基、氧原子、或單鍵;
Figure 109121914-A0305-02-0073-128
式(18)中,R31各自獨立地表示氫原子、芳基、芳烷基、烯基、烷基、或環烷基,R32各自獨立地表示氫原子、芳基、芳烷基、烯基、烷基、或環烷基,X4表示伸烷基、下式(19)表示之基、式「-SO2-」表示之基、式「-CO-」表示之基、氧原子、或單鍵;
Figure 109121914-A0305-02-0073-131
式(19)中,Y為伸烷基、或具有芳香族環之碳數6以上且30以下之烴基,n7表示0以上之整數。
The pre-coated bottom filling material in the form of a thin film as claimed in claim 8, wherein the benzo
Figure 109121914-A0305-02-0072-157
The compound (D) comprises at least one selected from the group consisting of compounds represented by the following formula (17) and the following formula (18);
Figure 109121914-A0305-02-0072-127
In formula (17), R29 each independently represents a hydrogen atom, an aryl group, an aralkyl group, an alkenyl group, an alkyl group, or a cycloalkyl group; R30 each independently represents a hydrogen atom, an aryl group, an aralkyl group, an alkenyl group, an alkyl group, or a cycloalkyl group; X3 represents an alkylene group, a group represented by the following formula (19), a group represented by the formula " -SO2- ", a group represented by the formula "-CO-", an oxygen atom, or a single bond;
Figure 109121914-A0305-02-0073-128
In formula (18), R 31 each independently represents a hydrogen atom, an aryl group, an aralkyl group, an alkenyl group, an alkyl group, or a cycloalkyl group; R 32 each independently represents a hydrogen atom, an aryl group, an aralkyl group, an alkenyl group, an alkyl group, or a cycloalkyl group; X 4 represents an alkylene group, a group represented by the following formula (19), a group represented by the formula "-SO 2 -", a group represented by the formula "-CO-", an oxygen atom, or a single bond;
Figure 109121914-A0305-02-0073-131
In formula (19), Y is an alkylene group or a alkyl group having 6 or more and 30 or less carbon atoms and having an aromatic ring, and n7 represents an integer of 0 or more.
如請求項8之薄膜形態之預塗型底部填充材料,其中,該苯并
Figure 109121914-A0305-02-0073-158
化合物(D)包含選自於由下式(20)表示之化合物、下式(21)表示之化合物、下式(22)表示之化合物、下式(23)表示之化合物、下式(24)表示之化合物、及下式(25)表示之化合物構成之群組中之至少1種;
Figure 109121914-A0305-02-0073-129
式(22)中,R33各自獨立地表示氫原子、或碳數1~4之烴基;
Figure 109121914-A0305-02-0074-130
The pre-coated bottom filling material in the form of a thin film as claimed in claim 8, wherein the benzo
Figure 109121914-A0305-02-0073-158
Compound (D) comprises at least one selected from the group consisting of a compound represented by the following formula (20), a compound represented by the following formula (21), a compound represented by the following formula (22), a compound represented by the following formula (23), a compound represented by the following formula (24), and a compound represented by the following formula (25);
Figure 109121914-A0305-02-0073-129
In formula (22), R 33 each independently represents a hydrogen atom or a carbon number 1 to 4 alkyl group;
Figure 109121914-A0305-02-0074-130
如請求項8之薄膜形態之預塗型底部填充材料,其中,該苯并
Figure 109121914-A0305-02-0074-159
化合物(D)的含量相對於該化合物(A)100質量份,為5質量份以上且50質量份以下。
The pre-coated bottom filling material in the form of a thin film as claimed in claim 8, wherein the benzo
Figure 109121914-A0305-02-0074-159
The content of the compound (D) is 5 parts by mass or more and 50 parts by mass or less based on 100 parts by mass of the compound (A).
如請求項1之薄膜形態之預塗型底部填充材料,其中,更含有丙烯基化合物(E)。 The pre-coated bottom filling material in the form of a thin film as in claim 1 further contains an acrylic compound (E). 如請求項12之薄膜形態之預塗型底部填充材料,其中,該丙烯基化合物(E)的含量相對於該化合物(A)100質量份,為5質量份以上且50質量份以下。 The pre-coated bottom filling material in the form of a thin film as claimed in claim 12, wherein the content of the acrylic compound (E) is 5 parts by mass or more and 50 parts by mass or less relative to 100 parts by mass of the compound (A). 如請求項1之薄膜形態之預塗型底部填充材料,更含有助熔劑成分(F)。 The pre-coated bottom filling material in the form of a thin film as in claim 1 further contains a flux component (F). 如請求項14之薄膜形態之預塗型底部填充材料,其中,該助熔劑成分(F)的含量相對於該化合物(A)100質量份,為5質量份以上且60質量份以下。 The pre-coated bottom filling material in the form of a thin film as claimed in claim 14, wherein the content of the flux component (F) is 5 parts by mass or more and 60 parts by mass or less relative to 100 parts by mass of the compound (A). 如請求項1之薄膜形態之預塗型底部填充材料,更含有無機填充材(G)。 The pre-coated bottom filling material in the form of a thin film as in claim 1 further contains an inorganic filler (G). 如請求項16之薄膜形態之預塗型底部填充材料,其中,該無機填充材(G)的平均粒徑為3μm以下。 A pre-coated bottom filling material in the form of a thin film as claimed in claim 16, wherein the average particle size of the inorganic filler (G) is less than 3 μm. 如請求項16之薄膜形態之預塗型底部填充材料,其中,該無機填充材(G)包含選自於由二氧化矽、氫氧化鋁、氧化鋁、軟水鋁石(boehmite)、氮化硼、氮化鋁、氧化鎂、及氫氧化鎂構成之群組中之至少1種。 A pre-coated bottom filling material in a thin film form as claimed in claim 16, wherein the inorganic filler (G) comprises at least one selected from the group consisting of silicon dioxide, aluminum hydroxide, aluminum oxide, boehmite, boron nitride, aluminum nitride, magnesium oxide, and magnesium hydroxide. 如請求項16之薄膜形態之預塗型底部填充材料,其中,該無機填充材(G)的含量相對於該化合物(A)100質量份,為300質量份以下。 The pre-coated bottom filling material in the form of a thin film as claimed in claim 16, wherein the content of the inorganic filler (G) is less than 300 parts by mass relative to 100 parts by mass of the compound (A). 如請求項1之薄膜形態之預塗型底部填充材料,更含有氫過氧化物(H)。 The pre-coated bottom filling material in the form of a thin film as in claim 1 further contains hydroperoxide (H). 如請求項20之薄膜形態之預塗型底部填充材料,其中,該氫過氧化物(H)的含量相對於該化合物(A)之合計量100質量份,為10質量份以下。 The pre-coated bottom filling material in the form of a thin film as claimed in claim 20, wherein the content of the hydroperoxide (H) is less than 10 parts by mass relative to 100 parts by mass of the total amount of the compound (A). 如請求項1之薄膜形態之預塗型底部填充材料,厚度為10μm以上且100μm以下。 The pre-coated bottom filling material in the form of a thin film as in claim 1 has a thickness of more than 10μm and less than 100μm. 一種疊層體,具備: 支持基材,及疊層於該支持基材上之含有如請求項1至22中任一項之薄膜形態之預塗型底部填充材料之層。 A laminated body comprising: a supporting substrate, and a layer of a pre-coated bottom filling material in the form of a thin film as described in any one of claims 1 to 22 laminated on the supporting substrate. 一種附設預塗型底部填充材料層之半導體晶圓,具備:半導體晶圓,及疊層於該半導體晶圓之如請求項23之疊層體;且該含有薄膜形態之預塗型底部填充材料之層疊層於該半導體晶圓。 A semiconductor wafer with a pre-coated bottom filling material layer, comprising: a semiconductor wafer, and a stacked body as claimed in claim 23 stacked on the semiconductor wafer; and the layer containing the pre-coated bottom filling material in a thin film form is stacked on the semiconductor wafer. 一種附設預塗型底部填充材料層之半導體搭載用基板,具備:半導體搭載用基板,及疊層於該半導體搭載用基板之如請求項23之疊層體;且該含有薄膜形態之預塗型底部填充材料之層疊層於該半導體搭載用基板。 A semiconductor mounting substrate with a pre-coated bottom filling material layer, comprising: a semiconductor mounting substrate, and a stacked body as claimed in claim 23 stacked on the semiconductor mounting substrate; and the layer containing the pre-coated bottom filling material in a thin film form is stacked on the semiconductor mounting substrate. 一種半導體裝置,具備如請求項24之附設預塗型底部填充材料層之半導體晶圓。 A semiconductor device having a semiconductor wafer with a pre-coated bottom filling material layer as in claim 24. 一種半導體裝置,具備如請求項25之附設預塗型底部填充材料層之半導體搭載用基板。 A semiconductor device having a semiconductor mounting substrate with a pre-coated bottom filling material layer as in claim 25.
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