JP2015078320A - Semiconductor sealing resin composition and semiconductor device - Google Patents

Abstract

A semiconductor sealing resin composition capable of forming a semiconductor sealing material having excellent heat resistance, and a semiconductor device in which a semiconductor element is sealed with a cured product of the semiconductor sealing resin composition. about. The resin composition for semiconductor encapsulation of the present invention comprises a maleimide compound represented by the following general formula (1), an isocyanuric represented by the following formula (2-1) and the following formula (2-2). It contains at least one of compounds, an aromatic diamine, an imidazole compound, and an organic peroxide. In the following general formula (1), X represents an alkylene group having 1 to 10 carbon atoms, an oxygen atom, or a single bond. [Selection figure] None

Description

  The present invention relates to a resin composition for semiconductor encapsulation and a semiconductor device.

  In recent years, SiC / GaN power semiconductor devices equipped with elements using SiC (silicon carbide) or GaN (gallium nitride) have attracted attention from the viewpoint of effective use of electrical energy (for example, see Patent Document 1). .

  These devices can not only significantly reduce power loss compared to conventional Si-based devices, but can also operate at higher voltages, higher currents, and temperatures as high as 300 ° C. For this reason, it is expected to expand to applications that have been difficult to apply to conventional Si power semiconductor devices.

  Thus, since the element (semiconductor element) using SiC / GaN itself can operate under the severe conditions as described above, a semiconductor sealing material provided in the semiconductor device to protect these elements is used. On the other hand, heat resistance more than conventional is required.

  Here, in a conventional Si power semiconductor device, a semiconductor encapsulant is generally used that is composed of a cured product of an epoxy resin composition as a main material from the viewpoint of adhesiveness, electrical stability, and the like. It has been.

  In such an epoxy resin composition, the epoxy equivalent of the constituent epoxy resin, or the hydroxyl equivalent of the curing agent (phenolic resin curing agent) is lowered to increase the crosslinking density, or the functional groups ( It has been studied to improve the heat resistance of a semiconductor sealing material obtained by using such a resin composition by using a technique such as making a structure connecting between an epoxy group and a hydroxyl group a rigid structure.

  However, even with such studies, it has not been said that the heat resistance of the semiconductor encapsulant obtained using the epoxy resin composition is sufficiently improved.

  Then, it replaces with an epoxy-type resin composition, and using the hardened | cured material of the resin composition containing a bismaleimide and an allyl compound is examined as a semiconductor sealing material (for example, nonpatent literature 1).

  By making the resin composition to have such a configuration, the heat resistance can be improved as compared with the epoxy resin composition, but the semiconductor has a heat resistance more suitable for the use conditions of the Si power semiconductor device. As for the resin composition capable of forming the sealing material, the actual situation is that further studies are currently being made.

Japanese Patent Laying-Open No. 2005-167035

Keiko Otsuka et al., Proceedings of the 62nd Annual Meeting of the Society of Polymer Science (2013)

  The present invention provides a semiconductor sealing resin composition capable of forming a semiconductor sealing material having excellent heat resistance, and a semiconductor device formed by sealing a semiconductor element with a cured product of the semiconductor sealing resin composition. There is to do.

［一般式（１）中、Ｘは、炭素数１〜１０のアルキレン基、酸素原子、または単結合を表す。］

Such an object is achieved by the present invention described in the following (1) to (10).
(1) a maleimide compound represented by the following general formula (1);
At least one of the isocyanuric compounds represented by the following formula (2-1) and the following formula (2-2);
An aromatic diamine,
An imidazole compound,
A resin composition for encapsulating a semiconductor, comprising an organic peroxide.

[In General Formula (1), X represents a C1-C10 alkylene group, an oxygen atom, or a single bond. ]

  (2) The resin composition for semiconductor encapsulation according to (1), wherein the aromatic diamine is metaphenylenediamine.

  (3) The resin composition for semiconductor encapsulation according to (1) or (2), wherein the imidazole compound is 2-methylimidazole.

  (4) The resin composition for semiconductor encapsulation according to any one of (1) to (3), wherein the organic peroxide is dicumyl peroxide.

  (5) The blending ratio of the maleimide compound and the isocyanuric compound is any one of the above (1) to (4), which is 3.0: 1.0 to 3.0: 0.1 by weight. The resin composition for semiconductor encapsulation as described in 2.

  (6) The blend ratio of the maleimide compound and the aromatic diamine is 3.0: 1.0 to 3.0: 0.1 in weight ratio, and any one of (1) to (5) above A resin composition for encapsulating a semiconductor according to Item.

  (7) The content of the imidazole compound is any one of the above (1) to (6), which is 0.1 to 5.0 parts by mass with respect to a total of 100 parts by mass of the maleimide compound and the isocyanuric compound. The resin composition for semiconductor encapsulation according to Item 1.

  (8) Content of the said organic peroxide is 0.1-5.0 mass parts with respect to a total of 100 mass parts of the said maleimide compound and the said isocyanuric compound of said (1) thru | or (7). The resin composition for semiconductor sealing of any one of Claims 1.

  (9) A semiconductor device, wherein a semiconductor element is sealed with a cured product of the resin composition for semiconductor encapsulation according to any one of (1) to (8).

  (10) The semiconductor device according to (9), wherein the semiconductor element uses SiC (silicon carbide) and / or GaN (gallium nitride).

  According to the present invention, in the resin composition for semiconductor encapsulation, the maleimide compound represented by the above general formula (1) and the isocyanuric represented by the above formula (2-1) and the above formula (2-2). To improve the heat resistance of a semiconductor encapsulant composed of a cured product resulting from containing at least one of the compounds, an aromatic diamine, an imidazole compound, and an organic peroxide. Can do. Furthermore, this semiconductor sealing material can have a high fracture toughness value and be excellent in flame retardancy and metal adhesion.

It is a longitudinal cross-sectional view which shows an example of the semiconductor device using the resin composition for semiconductor sealing of this invention. It is process schematic which shows an example of the manufacturing method of the resin composition for semiconductor sealing.

  Hereinafter, the resin composition for semiconductor encapsulation and the semiconductor device of the present invention will be described in detail based on preferred embodiments.

  First, prior to describing the resin composition for semiconductor encapsulation of the present invention, a semiconductor device (semiconductor device of the present invention) using the resin composition for semiconductor encapsulation of the present invention will be described.

<Semiconductor device>
FIG. 1 is a longitudinal sectional view showing an example of a semiconductor device using the semiconductor sealing resin composition of the present invention. In the following description, the upper side in FIG. 1 is referred to as “upper” and the lower side is referred to as “lower”.

  A semiconductor device 10 illustrated in FIG. 1 is a QFP (Quad Flat Package) type semiconductor package, and includes a semiconductor chip (semiconductor element) 20, a die pad 30 that supports the semiconductor chip 20 via an adhesive layer 60, and the semiconductor chip 20. And leads 40 electrically connected to each other and a mold part (sealing part) 50 for sealing the semiconductor chip 20.

  The die pad 30 is composed of a metal substrate and functions as a support for supporting the semiconductor chip 20.

  The die pad 30 includes, for example, a metal substrate made of various metal materials such as Cu, Fe, Ni, and alloys thereof (for example, Cu-based alloys and iron / nickel-based alloys such as Fe-42Ni), The surface of the metal substrate is plated with silver or Ni—Pd, and the surface of the Ni—Pd plating is provided with a gold plating (gold flash) layer provided to improve the stability of the Pd layer. Are used.

  Moreover, the planar view shape of the die pad 30 usually corresponds to the planar view shape of the semiconductor chip 20 and is, for example, a square such as a square or a rectangle.

A plurality of leads 40 are provided radially on the outer periphery of the die pad 30.
An end portion of the lead 40 opposite to the die pad 30 protrudes (exposes) from the mold portion 50.

  The lead 40 is made of a conductive material, and for example, the same material as that of the die pad 30 described above can be used.

  Further, the lead 40 may be tin-plated on the surface thereof. Thereby, when the semiconductor device 10 is connected to the terminals provided on the mother board via the solder, the adhesion between the solder and the leads 40 can be improved.

  The semiconductor chip 20 is fixed (fixed) to the die pad 30 via the adhesive layer 60.

  Although this adhesive layer 60 is not specifically limited, For example, it forms using various adhesive agents, such as an epoxy-type adhesive agent, an acrylic adhesive agent, a polyimide-type adhesive agent, and a cyanate-type adhesive agent.

  Further, the semiconductor chip 20 is configured by using, for example, SiC (silicon carbide) or GaN (gallium nitride).

  The semiconductor chip 20 has an electrode pad 21, and the electrode pad 21 and the lead 40 are electrically connected by a wire 22. Thereby, the semiconductor chip 20 and each lead 40 are electrically connected.

  Although the material of this wire 22 is not specifically limited, The wire 22 can be comprised by Au wire or Al wire, for example.

  The die pad 30, each member provided on the upper surface side of the die pad 30, and the inner portion of the lead 40 are sealed by the mold unit 50. As a result, the outer end portion of the lead 40 protrudes from the mold portion 50.

  This mold part (semiconductor sealing material) 50 is comprised by the hardened | cured material of the resin composition for semiconductor sealing of this invention.

  Hereinafter, this resin composition for encapsulating a semiconductor (hereinafter sometimes simply referred to as “resin composition”) will be described.

<Resin composition for semiconductor encapsulation>
The resin composition for semiconductor encapsulation of the present invention includes a maleimide compound represented by the following general formula (1) and an isocyanuric compound represented by the following formula (2-1) and the following formula (2-2). It contains at least one kind, an aromatic diamine, an imidazole compound, and an organic peroxide.

［一般式（１）中、Ｘは、炭素数１〜１０のアルキレン基、酸素原子、または単結合を表す。］

[In General Formula (1), X represents a C1-C10 alkylene group, an oxygen atom, or a single bond. ]

  As described above, when the semiconductor chip 20 is made of SiC (silicon carbide) or GaN (gallium nitride), the semiconductor chip 20 can operate even under a high temperature reaching 300 ° C. Therefore, although it is calculated | required that it has the outstanding heat resistance as the mold part 50, the mold part 50 exhibits the outstanding heat resistance by making the mold part 50 into the hardened | cured material of the resin composition of this structure. Will be. Furthermore, this mold part 50 can have a high fracture toughness value and be excellent in flame retardancy and metal adhesion.

[Maleimide compound]
The maleimide compound is a compound represented by the general formula (1) (hereinafter sometimes simply referred to as “compound (1)”) and is one of the main materials contained in the resin composition. .

  By using the compound (1) as the maleimide compound, the mold part 50 composed of a cured product obtained from the resin composition exhibits excellent heat resistance and flame resistance.

  In the compound represented by the general formula (1), X represents an alkylene group having 1 to 10 carbon atoms, an oxygen atom, or a single bond.

  Although it does not specifically limit as a C1-C10 alkylene group in X, A linear or branched alkylene group is preferable.

  Specific examples of the linear alkylene group include methylene group, ethylene group, propylene group, butylene group, pentylene group, hexylene group, heptylene group, octylene group, nonylene group, decanylene group, trimethylene group, tetramethylene group. Group, pentamethylene group, hexamethylene group and the like.

Specific examples of the branched alkylene group include —C (CH ₃ ) ₂ — (isopropylene group), —CH (CH ₃ ) —, —CH (CH ₂ CH ₃ ) —, and —C. _{(CH 3) (CH 2 CH} 3) -, - C (CH 3) (CH 2 CH 2 CH 3) -, - C (CH 2 CH 3) 2 - alkyl methylene groups such as; -CH (CH _{3 ) CH 2 -, - CH (} CH 3) CH (CH 3) -, - C (CH 3) 2 CH 2 -, - CH (CH 2 CH 3) CH 2 -, - C (CH 2 CH 3) 2 Examples thereof include an alkylethylene group such as —CH ₂ —.

  In addition, although carbon number of the alkylene group in X should just be 1-10, it is preferable that it is 1-3, and it is more preferable that it is 1 or 2. Specifically, examples of the alkylene group having such a carbon number include a methylene group and an ethylene group. Thereby, the mold part 50 comprised with the hardened | cured material obtained from the resin composition provided with this group as X exhibits more excellent heat resistance.

  Accordingly, preferred specific examples of the compound represented by the general formula (1) include those represented by the following formulas (1-1) and (1-2).

[Isocyanur compound]
The isocyanuric compound is a compound represented by the formula (2-1) (hereinafter sometimes simply referred to as “compound (2-1)”) and a compound represented by the formula (2-2) (hereinafter referred to as “compound (2-1)”). And may be simply referred to as “compound (2-2)”) and is one of the main materials contained in the resin composition.

  By using the compound containing the compound (2-1) and / or the compound (2-2) as the isocyanuric compound, the mold part 50 composed of a cured product obtained from the resin composition exhibits excellent heat resistance. To be. Furthermore, the mold part 50 can have a high fracture toughness value and be excellent in flame retardancy and metal adhesion.

  Moreover, in the resin composition, the blending ratio of the maleimide compound represented by the general formula (1) and the isocyanuric compound represented by the formula (2-1) and / or the formula (2-2) is as follows. The weight ratio is preferably 3.0: 1.0 to 3.0: 0.1, and more preferably 3.0: 0.8 to 3.0: 0.3. Thereby, while being able to make the heat resistance of the mold part 50 comprised with the hardened | cured material obtained from a resin composition more excellent, the mold part 50 can have a high fracture toughness value. .

[Aromatic diamine]
The aromatic diamine is one of the main materials contained in the resin composition, and the maleimide compound represented by the general formula (1), the formula (2-1) and / or the formula (2- It has a function as a curing agent in the polymerization reaction with at least one of the isocyanuric compounds represented by 2).

  By including such an aromatic diamine, in the cured product obtained from the resin composition, the network formed by the polymerization reaction of the maleimide compound and the isocyanuric compound is made more precise. be able to.

  The aromatic diamine is not particularly limited. For example, metaphenylenediamine (MPDA), paraphenylenediamine (PPD), 4,4′-diaminobiphenyl, 4,4′-diaminodiphenylmethane (MDA), 2,2 ′. -Bis (4-aminophenyl) hexafluoropropane (Bis-A-AF), 4,4'-diaminodiphenyl ether (ODA), 4,4'-diaminodiphenyl sulfone, etc., and one of these or Two or more kinds can be used in combination. Of these, metaphenylenediamine is preferred. Thereby, the said network can be made denser and the hardened | cured material obtained, ie, the mold part 50, can have the intensity | strength which was more excellent.

  In addition, the aromatic ring with which these aromatic diamine is provided may be provided with substituents, such as alkyl groups, such as a methyl group and an ethyl group, and a hydroxyl group.

  Further, in the resin composition, the blending ratio of the maleimide compound and the aromatic diamine is preferably 3.0: 1.0 to 3.0: 0.1 by weight, and 3.0: 0. It is more preferable that it is 0.8-3.0: 0.3. Thereby, the heat resistance of the mold part 50 comprised with the hardened | cured material obtained from a resin composition can be made more excellent.

[Imidazole compound]
The imidazole compound is one of the main materials contained in the resin composition, and the maleimide compound represented by the general formula (1), the formula (2-1) and / or the formula (2-2). It has a function as a curing catalyst (curing accelerator) that accelerates the polymerization reaction with at least one of the isocyanuric compounds represented by ().

  The imidazole compound is not particularly limited. For example, 2-ethyl-4-methylimidazole, 2-methylimidazole, 2-ethylimidazole, 2,4-dimethylimidazole, 2-undecylimidazole, 2-heptadecylimidazole, 2-phenylimidazole, 2-phenyl-4-methylimidazole, 1-benzyl-2-methylimidazole, 2-phenyl-4,5-dihydroxymethylimidazole, 2-phenyl-4-methyl-5-hydroxymethylimidazole, 1 -Vinyl-2-methylimidazole, 1-propyl-2-methylimidazole, 2-isopropylimidazole, 1-cyanomethyl-2-methyl-imidazole, 1-cyanoethyl-2-ethyl-4-methylimidazole, 1-cyanoethyl-2 -U Decyl imidazole, 1-cyanoethyl-2-phenylimidazole and the like, it can be used in combination of one or more of them. Among these, 2-methylimidazole, 2-phenylimidazole, and 2-ethyl-4-methylimidazole are preferable, and 2-methylimidazole (2MZ) is particularly preferable. Since these compounds have a particularly excellent function as the curing catalyst, the maleimide compound represented by the general formula (1), the formula (2-1) and / or the formula (2) The polymerization reaction with at least one of the isocyanuric compounds represented by -2) can be promoted more reliably. As a result, the moldability of the mold part 50 is improved and the heat resistance of the mold part 50 is improved.

  The content of the imidazole compound is the sum of the maleimide compound represented by the general formula (1) and at least one isocyanuric compound represented by the formula (2-1) and / or the formula (2-2). It is preferable that it is 0.1-5.0 mass part with respect to 100 mass parts, and it is more preferable that it is 0.1-3.0 mass part. By setting the content of the imidazole compound within such a range, the heat resistance of the mold part 50 composed of a cured product obtained from the resin composition can be made more excellent.

[Organic peroxide]
The organic peroxide is represented by the general formula: R—O—O—R (two Rs are each an independent organic group), and a radical is generated by the decomposition thereof. A polymerization reaction between the maleimide compound represented by the general formula (1) and at least one of the isocyanuric compounds represented by the formula (2-1) and / or the formula (2-2). It has a function as a curing catalyst (curing accelerator) that promotes.

  In the present invention, both the organic peroxide and the imidazole compound described above are contained as a functioning as a curing catalyst. Thus, by including two curing catalysts as described above, A polymerization reaction between the maleimide compound represented by the general formula (1) and at least one of the isocyanuric compounds represented by the formula (2-1) and / or the formula (2-2); The polymerization reaction via the aromatic diamine as the curing agent can be more reliably advanced.

  The organic peroxide is not particularly limited, and examples thereof include dicumyl peroxide, α, α′-bis (t-butylperoxy) diisopropylbenzene, 2,5-dimethyl-2,5-bis (t-butyl). Peroxy) hexane, 2,5-dimethyl-2,5-bis (t-butylperoxy) hexyne-3, di-t-hexyl peroxide, 1,1-bis (t-butylperoxy) -3, 3,5-trimethylcyclohexane, t-butylperoxy-2-ethylhexanoate, t-butylperoxyisopropyl monocarbonate and the like can be mentioned, and one or more of these can be used in combination. . Among these, dicumyl peroxide is preferable. Since this compound has a particularly excellent function as the curing catalyst, the maleimide compound represented by the general formula (1), the formula (2-1) and / or the formula (2- The polymerization reaction with at least one of the isocyanuric compounds represented by 2) can be promoted more reliably. As a result, the moldability of the mold part 50 is improved and the heat resistance of the mold part 50 is improved.

  The content of the organic peroxide is at least one of the maleimide compound represented by the general formula (1) and the isocyanuric compound represented by the formula (2-1) and / or the formula (2-2). It is preferable that it is 0.1-5.0 mass part with respect to a total of 100 mass parts, and it is more preferable that it is 0.1-3.0 mass part. By setting the content of the organic peroxide within such a range, the heat resistance of the mold part 50 made of a cured product obtained from the resin composition can be made more excellent.

[Other compounds]
In addition to the above-mentioned various compounds, the semiconductor sealing resin composition of the present invention includes, as necessary, at least one of an inorganic filler, an adhesion aid, and a coupling agent as other compounds. It may be included. Hereinafter, these compounds will be described.

(Inorganic filler)
The inorganic filler has a function of reducing an increase in moisture absorption of the resin composition and a decrease in strength.

  The inorganic filler is not particularly limited, and examples thereof include fused silica, crystalline silica, alumina, silicon nitride, and aluminum nitride, and the most preferably used is spherical fused silica. These inorganic fillers may be used alone or in combination of two or more. These may be surface-treated with a coupling agent.

  The lower limit of the amount of the inorganic filler in the resin composition is preferably 65% by mass or more, and more preferably 70% by mass or more with respect to the total mass of the resin composition. When the lower limit value is within the above range, an increase in moisture absorption and a decrease in strength due to curing of the resulting resin composition can be reduced, and therefore a cured product having good solder crack resistance can be obtained.

  Moreover, the upper limit of the amount of the inorganic filler in the resin composition is preferably 93% by mass or less, more preferably 90% by mass or less, with respect to the total mass of the resin composition. When the upper limit is within the above range, the resulting resin composition has good fluidity and good moldability.

(Adhesion aid)
The adhesion assistant includes a mold part 50 made of a cured product obtained by curing the resin composition, and other members (for example, the die pad 30 and the leads 40) other than the mold part 50 in the semiconductor device 10. It has a function to improve adhesion.

  The adhesion assistant is not particularly limited, and examples thereof include a triazole compound. Examples of the triazole compound include a compound having a 1,2,4-triazole ring and a compound having a 1,2,3-triazole ring. Can be mentioned. Specific examples of the compound include 3-amino-1,2,4-triazole, 4-amino-1,2,3-triazole, 3-amino-1,2,4-triazole-5-carboxylic acid, 3-mercapto-1,2,4-triazole, 4-mercapto-1,2,3-triazole, 3,5-diamino-1,2,4-triazole, 3,5-dimercapto-1,2,4- Triazole, 4,5-dimercapto-1,2,3-triazole, 3-amino-5-mercapto-1,2,4-triazole, 4-amino-5-mercapto-1,2,3-triazole, 3- And hydrazino-4-amino-5-mercapto-1,2,4-triazole and 5-mercapto-1,2,4-triazole-3-methanol, and the like, one or two of these It can be used in combination on. Of these, a compound having at least one mercapto group is preferable.

  The content of the adhesion assistant in the resin composition is preferably 0.01 to 2 parts by mass and more preferably 0.03 to 1 part by mass with respect to the total mass of the resin composition. By setting the content of the adhesion assistant within such a range, the effect can be exhibited more remarkably.

(Coupling agent)
A coupling agent has a function which improves the adhesiveness of the resin component and inorganic filler which are contained in a resin composition, for example, a silane coupling agent etc. are used.

  Various types of silane coupling agents can be used, and examples thereof include epoxy silane, amino silane, alkyl silane, ureido silane, mercapto silane, and vinyl silane.

  Specific examples of the compound include γ-aminopropyltriethoxysilane, γ-aminopropyltrimethoxysilane, N-β (aminoethyl) γ-aminopropyltrimethoxysilane, and N-β (aminoethyl) γ-amino. Propylmethyldimethoxysilane, N-phenylγ-aminopropyltriethoxysilane, N-phenylγ-aminopropyltrimethoxysilane, N-β (aminoethyl) γ-aminopropyltriethoxysilane, N-6- (aminohexyl) 3-aminopropyltrimethoxysilane, N- (3- (trimethoxysilylpropyl) -1,3-benzenedimethanane, γ-glycidoxypropyltriethoxysilane, γ-glycidoxypropyltrimethoxysilane, γ -Glycidoxypropylmethyldimethoxysilane, β- (3,4 Poxycyclohexyl) ethyltrimethoxysilane, γ-mercaptopropyltrimethoxysilane, methyltrimethoxysilane, γ-ureidopropyltriethoxysilane, vinyltriethoxysilane, etc., and one or more of these are combined Of these, epoxy silane, mercapto silane, and amino silane are preferable, and the amino silane is more preferably primary amino silane or anilino silane.

  The lower limit of the blending ratio of the coupling agent such as a silane coupling agent is preferably 0.01% by mass or more, more preferably 0.05% by mass or more, and particularly preferably 0.1% by mass in the total resin composition. That's it. If the lower limit of the blending ratio of a coupling agent such as a silane coupling agent is within the above range, the interface strength between the resin component and the inorganic filler does not decrease, and good solder crack resistance in a semiconductor device Can be obtained.

  Moreover, as an upper limit of the mixture ratio of coupling agents, such as a silane coupling agent, 1 mass% or less is preferable in all the resin compositions, More preferably, it is 0.8 mass% or less, Most preferably, it is 0.6 mass%. It is as follows. When the upper limit of the blending ratio of the silane coupling agent is within the above range, the interface strength between the resin component and the inorganic filler does not decrease, and good solder crack resistance in the semiconductor device can be obtained.

  Furthermore, the resin composition for semiconductor encapsulation of the present invention comprises a maleimide compound represented by the general formula (1) and an isocyanuric compound represented by the above formula (2-1) and the above formula (2-2). It contains at least one of them, an aromatic diamine, an imidazole compound, and an organic peroxide. In addition to the above-mentioned other compounds, if necessary, natural wax such as carnauba wax, polyethylene wax Synthetic waxes such as higher fatty acids such as stearic acid and zinc stearate and metal salts thereof and mold release agents such as paraffin; colorants such as carbon black, bengara, titanium oxide, phthalocyanine, perylene black; hydrotalcites, Ion troughs such as hydrous oxides of elements selected from magnesium, aluminum, bismuth, titanium and zirconium Low stress additives such as silicone oil and rubber; Flame retardants such as brominated epoxy resin, antimony trioxide, aluminum hydroxide, magnesium hydroxide, zinc borate, zinc molybdate, and phosphazene; hindered phenols and phosphorus compounds Various additives such as antioxidants may be appropriately blended.

  The resin composition for semiconductor encapsulation as described above can be produced using, for example, the following method for producing a resin composition for semiconductor encapsulation.

<Method for Producing Semiconductor Sealing Resin Composition>
FIG. 2 is a process schematic diagram showing an example of a method for producing a semiconductor sealing resin composition.

Hereinafter, each process of the manufacturing method of a resin composition is demonstrated one by one.
(Kneading process)
This step comprises at least one of a maleimide compound represented by the general formula (1), an isocyanuric compound represented by the above formula (2-1) and the above formula (2-2), and an aromatic diamine. And an imidazole compound, an organic peroxide, and, if necessary, other compounds are mixed (dispersed and mixed), heated, melted, and kneaded to obtain a kneaded product.

Hereinafter, this step will be described in detail.
<1> First, the constituent material of the resin composition described above, that is, the maleimide compound represented by the above general formula (1), and the isocyanuric represented by the above formula (2-1) and the above formula (2-2). A predetermined amount of at least one of the compounds, an aromatic diamine, an imidazole compound, an organic peroxide, and, if necessary, other compounds are weighed and blended to prepare a composition. Then, this composition is uniformly pulverized and mixed (dispersed and mixed) at room temperature using, for example, a mixer, a jet mill, a ball mill, or the like.

<2> Next, the composition is melted and kneaded while heating using a kneader to obtain a kneaded product, and then the kneaded product is cooled.

  Although it does not specifically limit as a kneading machine, For example, a heating roll, a kneader, an extruder, etc. can be used.

  In addition, the temperature at which the composition is melted is slightly different depending on the constituent material of the composition, but is usually preferably set to 50 to 150 ° C, more preferably 90 to 130 ° C. Thereby, both the maleimide compound represented by the general formula (1) and the isocyanuric compound represented by the formula (2-1) and / or the formula (2-2) are brought into a molten state. Therefore, it is possible to reliably obtain a kneaded product composed of a composition in which each resin component contained in the composition is uniformly dispersed.

(Crushing process)
This step is a step of obtaining a resin composition (kneaded product made into a pulverized product) composed of powder by pulverizing the kneaded product obtained in the kneading step.

  At this time, the kneaded product can be pulverized by at least one external force selected from the group consisting of compression, impact, shear, friction (milling), and freezing. More specifically, for example, a wing mill (manufactured by Sanjo Industry Co., Ltd.), a mighty mill (manufactured by Sanjo Industry Co., Ltd.), a jet mill and other airflow type pulverizers; Ball mills; wet pot mills, planetary pot mills and other pot mills; hammer mills; roller mills and other pulverizers, and one or more of these can be used in combination. Among these, a jet mill, a ball mill, a hammer mill, and a pot mill are preferable, and a jet mill is more preferable. Thereby, the powder which has a median diameter as mentioned later can be obtained reliably.

  The temperature at which the kneaded product is pulverized to obtain a powder is preferably set to 40 ° C. or less, and more preferably 10 to 30 ° C. Thereby, the powder formed by pulverizing the kneaded product is in a molten state, and due to this, it can be reliably prevented that adjacent powders aggregate to form lumps, The powder will maintain a particulate form.

  In the present invention, the temperature at which the kneaded product is pulverized to obtain powder is the temperature immediately after the kneaded product is pulverized.

  In addition, in the case of using each constituent material included in the resin composition without the concept of melting point, the “melting point” itself means “softening point” in the present specification. .

  By passing through the above steps, a resin composition composed of powder can be obtained.

  As described above, the resin composition may be stored and transported as a powder, but may be a resin molded body from the viewpoint of ease of storage, transport, and molding operation.

  Hereinafter, a case where a tablet is obtained using the above-described powder as a resin molded body will be described as an example.

(Resin molding process)
In this step, the resin composition composed of the powder obtained in the pulverization step is molded (resin molded body molding) into a tablet shape. It is a process to obtain.

  A tablet (resin molding) can be obtained, for example, by pressing the powder and molding it into a tablet.

  By passing through the above processes, the resin composition comprised with a tablet can be obtained.

  In addition, a resin molding is not limited to a tablet-like tablet, A sheet shape, a strip shape, a pellet shape, etc. may be sufficient.

  Moreover, using the resin composition as described above, the semiconductor device 10 is manufactured using, for example, the following semiconductor device manufacturing method.

<Method for Manufacturing Semiconductor Device>
Any of powders and tablets composed of the resin composition described above can be used in the method for manufacturing a semiconductor device.

  As a method of manufacturing a semiconductor device using a tablet, for example, after each member excluding the mold part 50 among the members constituting the semiconductor device 10 described above is placed in a mold cavity, the tablet is transferred by molding, The method of sealing each member except the mold part 50 by shaping | molding and hardening with shaping | molding methods, such as a compression mold, is mentioned.

  As a method of manufacturing a semiconductor device using powder, for example, using a powder whose particle size is adjusted by sieving or the like, a compression molding method is applied to form a resin composition composed of powder, The method of sealing each member except the mold part 50 by hardening is mentioned.

  The molding temperature is preferably set to 150 to 250 ° C, more preferably 160 to 220 ° C, and still more preferably 175 to 200 ° C.

  Furthermore, the molding time is preferably set to 30 to 600 seconds, more preferably 45 to 240 seconds, and still more preferably 60 to 180 seconds.

  The heating temperature when PMC (post mold cure) is performed after molding the resin composition is not particularly limited, but is preferably 150 to 250 ° C, and more preferably 180 to 220 ° C, for example.

  In addition, the heating time in the case of PMC (post mold curing) after molding is not particularly limited, but for example, it is preferably 0.5 to 10 hours, and more preferably 1 to 5 hours.

  By setting the conditions for PMC (post mold curing) after molding the resin composition within the above range, the resin composition can be cured more reliably.

  In this embodiment, the case where the semiconductor device 10 is applied to a quad flat package (QFP) has been described. However, the present invention is not limited to such a case, and can be applied to various types of semiconductor packages. , Dual Inline Package (DIP), Plastic Leaded Chip Carrier (PLCC), Low Profile Quad Flat Package (LQFP), Small Outline Package (SOP), Small Outline J Lead Package (SOJ), Thin Small Outline Package (TSOP), Thin Quad Flat Package (TQFP), Tape Carrier Package (TCP), Ball Grid Array (BGA), Chip Size Package (C P), Matrix Array Package Ball Grid Array (MAPBGA), Chip Stacked Chip Size Package, etc. It can be applied to packages applied to memory and logic system elements, and power systems such as power transistors The present invention can also be applied to a package such as TO-220 on which an element is mounted.

  As mentioned above, although the resin composition for semiconductor sealing and the semiconductor device of this invention were demonstrated, this invention is not limited to these.

  For example, the resin composition for encapsulating a semiconductor of the present invention may contain an optional component that can exhibit the same function.

  In addition, the configuration of each part of the semiconductor device of the present invention can be replaced with an arbitrary one that can exhibit the same function, or an arbitrary configuration can be added.

Next, specific examples of the present invention will be described.
In addition, this invention is not limited to description of these Examples at all.
1. Preparation of raw materials First, raw materials used in the resin compositions of the examples and comparative examples are shown below.
Unless otherwise specified, the amount of each component is part by mass.

(Maleimide compound 1)
As the maleimide compound (BMI) 1, a compound represented by the formula (1-1) was prepared. The molecular weight of this compound is 358.

(Isocyanur compound 1)
As the isocyanuric compound 1, a compound represented by the formula (2-1) was prepared. The molecular weight of this compound is 281.

(Isocyanur compound 2)
As the isocyanuric compound 2, the compound represented by the above (2-2) was prepared. The molecular weight of this compound is 265.

(Allyl compound 1)
As allyl compound 1, diallyl phthalate (o-DAP) was prepared.

(Epoxy compound 1)
As the epoxy compound 1, a tetramethylbiphenyl type epoxy resin (manufactured by Mitsubishi Chemical Corporation, YX4000K, epoxy equivalent 185 g / eq) was prepared.

(Phenol compound 1)
As the phenol compound 1, a phenol novolac type phenol resin (manufactured by Sumitomo Bakelite Co., Ltd., PR-51714, hydroxyl group equivalent of 104 g / eq) was prepared.

(Aromatic diamine 1)
As the aromatic diamine 1, metaphenylenediamine was prepared.

(Aromatic diamine 2)
As the aromatic diamine 2, 4,4′-diaminodiphenylmethane was prepared.

(Imidazole compound 1)
As imidazole compound 1, 2-methylimidazole was prepared.

(Imidazole compound 2)
As imidazole compound 2, 2-phenylimidazole was prepared.

(Organic peroxide 1)
Dicumyl peroxide was prepared as the organic peroxide 1.

(Curing catalyst 1)
As the curing catalyst 1, triphenylphosphine was prepared.

(Inorganic filler 1)
As the inorganic filler 1, fused spherical silica (average particle size 30 μm) was prepared.

2. Production of Resin Composition [Example 1]
First, maleimide compound 1 (17.25 parts by mass), isocyanuric compound 2 (2.85 parts by mass), aromatic diamine 1 (1.73 parts by mass), imidazole compound 1 (0.04 parts by mass), organic peroxide By weighing oxide 1 (0.13 parts by mass) and inorganic filler 1 (78.00 parts by mass), mixing them using a mixer, and then kneading them at 100 ° C. for 5 minutes using a roll. A kneaded product was obtained. Next, the kneaded product was pulverized after cooling to obtain a resin composition of Example 1 composed of powder.

[Examples 2 to 5, Comparative Examples 1 and 2]
Examples similar to Example 1 except that the maleimide compound, isocyanuric compound, aromatic diamine, imidazole compound, organic peroxide, inorganic filler, and the amount to be weighed were changed as shown in Table 1. The resin compositions of 2 to 5 and Comparative Examples 1 and 2 were obtained.

[Comparative Example 3]
A resin composition of Comparative Example 3 was obtained in the same manner as in Example 1 except that allyl compound 1 (2.85 parts by mass) was added instead of isocyanuric compound 1.

[Comparative Example 4]
Epoxy compound 1 (13.86 parts by mass), phenol compound 1 (7.74 parts by mass), curing catalyst 1 (0.40 parts by mass), and inorganic filler 1 (78.0 parts by mass) were added. Except for this, the resin composition of Comparative Example 4 was obtained in the same manner as in Example 1.

3. Evaluation The obtained resin compositions of Examples and Comparative Examples were evaluated by the following methods.

3-1. Evaluation of curability Gel time was evaluated as an evaluation of curability. The time from when the resin composition of each Example and Comparative Example was put on a hot plate with a surface temperature of 175 ° C. until tack-free was measured to obtain a gel time.

  In addition, as a judgment criterion, a gel time value of 10 seconds or more and 70 seconds or less was evaluated as ◯, and a gel time value of less than 10 seconds or more than 70 seconds was evaluated as x.

3-2. Evaluation of molding processability Using a low-pressure transfer molding machine (“KTS-30” manufactured by Kotaki Seiki Co., Ltd.), a mold for spiral flow measurement according to EMMI-1-66, mold temperature of 175 ° C., injection pressure The sealing resin compositions of the examples and comparative examples were injected and cured under the conditions of 6.9 MPa and holding time of 120 s, and the spiral flow was measured.

  In addition, as a judgment criterion, a spiral flow of 80 cm or more and 250 cm or less was evaluated as ◯, and a sample having a spiral flow of less than 80 cm or more than 250 cm was evaluated as x.

3-3. Evaluation of Glass Transition Temperature (Tg) The glass transition temperature of the resin composition of each Example and each Comparative Example was measured according to JIS K 6911.

  That is, for the resin compositions of the examples and comparative examples, using a low-pressure transfer molding machine (“KTS-30” manufactured by Kotaki Seiki Co., Ltd.), the mold temperature was 175 ° C., the injection pressure was 9.8 MPa, and the curing time was 120 s. Then, a test piece of 80 mm × 10 mm × 4 mm was molded, post-cured at 250 ° C. for 4 hours, and measured for dynamic viscoelasticity (A & D, “DDV-25GP”) (temperature increase rate: 5 ° C. / Min, frequency: 10 Hz, load: 800 g), and the tan δ peak temperature was read as the glass transition temperature.

3-4.5% Evaluation of Weight Reduction Temperature (Td ⁵ ) Using a low-pressure transfer molding machine (“KTS-30”, manufactured by Kotaki Seiki Co., Ltd.), a mold temperature of 175 ° C., an injection pressure of 9.8 MPa, and a curing time of 120 s The resin compositions of the examples and comparative examples were injection molded under the conditions described above, formed into a disk shape having a diameter of 50 mm and a thickness of 3 mm, and cured at 250 ° C. for 4 hours, whereby the heat resistance of the examples and comparative examples was A test piece was prepared.

Next, the test pieces of Examples and Comparative Examples, heat balance device (Bruker AXS, Inc., "TG-DTA2000") was used to measure the 5% weight loss temperature in air (Td ⁵⁾ did.

3-5. Evaluation of Flame Resistance Each Example and each Comparative Example using a low-pressure transfer molding machine (“KTS-30” manufactured by Kotaki Seiki Co., Ltd.) under conditions of a mold temperature of 175 ° C., an injection pressure of 9.8 MPa, and a curing time of 120 s. The flame retardant test piece having a thickness of 3.2 mm was produced by injection molding the resin composition.

About the obtained heat-resistant test piece, the flame resistance test was done according to the specification of UL94 vertical method.
Table 1 shows the fire resistance rank (class) after the determination.

  The evaluation results in the resin compositions of Examples and Comparative Examples obtained as described above are shown in Table 1 below.

  As shown in Table 1, in each Example, the results showed excellent curability, molding processability, heat resistance, and flame resistance.

On the other hand, Comparative Examples 1 and 2 had poor curability and molding processability, and a test sample could not be produced.
Moreover, in the comparative examples 3 and 4, it became a result inferior to flame resistance compared with each Example.

DESCRIPTION OF SYMBOLS 10 Semiconductor device 20 Semiconductor chip 21 Electrode pad 22 Wire 30 Die pad 40 Lead 50 Mold part (semiconductor sealing material)
60 Adhesive layer

Claims (10)

A maleimide compound represented by the following general formula (1);
At least one of the isocyanuric compounds represented by the following formula (2-1) and the following formula (2-2);
An aromatic diamine,
An imidazole compound,
A resin composition for encapsulating a semiconductor, comprising an organic peroxide.

[In General Formula (1), X represents a C1-C10 alkylene group, an oxygen atom, or a single bond. ]

  The resin composition for semiconductor encapsulation according to claim 1, wherein the aromatic diamine is metaphenylenediamine.   The resin composition for semiconductor encapsulation according to claim 1, wherein the imidazole compound is 2-methylimidazole.   The resin composition for semiconductor encapsulation according to claim 1, wherein the organic peroxide is dicumyl peroxide.   The compounding ratio of the said maleimide compound and the said isocyanuric compound is 3.0: 1.0-3.0: 0.1 by weight ratio, The semiconductor sealing of any one of Claim 1 thru | or 4 Resin composition.   The semiconductor encapsulation according to any one of claims 1 to 5, wherein a blending ratio of the maleimide compound and the aromatic diamine is 3.0: 1.0 to 3.0: 0.1 by weight ratio. Resin composition for stopping.   7. The semiconductor according to claim 1, wherein the content of the imidazole compound is 0.1 to 5.0 parts by mass with respect to 100 parts by mass in total of the maleimide compound and the isocyanuric compound. Resin composition for sealing.   The content of the organic peroxide is 0.1 to 5.0 parts by mass with respect to 100 parts by mass in total of the maleimide compound and the isocyanuric compound. A semiconductor sealing resin composition.   A semiconductor device comprising a semiconductor element sealed with a cured product of the resin composition for semiconductor encapsulation according to claim 1.   The semiconductor device according to claim 9, wherein the semiconductor element uses SiC (silicon carbide) and / or GaN (gallium nitride).

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