TWI721859B - Fluoropolymer high-frequency substrate, cover film, bondply and preparation method thereof - Google Patents
Fluoropolymer high-frequency substrate, cover film, bondply and preparation method thereof Download PDFInfo
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- TWI721859B TWI721859B TW109112188A TW109112188A TWI721859B TW I721859 B TWI721859 B TW I721859B TW 109112188 A TW109112188 A TW 109112188A TW 109112188 A TW109112188 A TW 109112188A TW I721859 B TWI721859 B TW I721859B
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- Prior art keywords
- layer
- low
- fluorine
- adhesive layer
- based polymer
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- 239000000758 substrate Substances 0.000 title claims abstract description 132
- 239000013039 cover film Substances 0.000 title claims abstract description 31
- 229920002313 fluoropolymer Polymers 0.000 title claims abstract description 25
- 239000004811 fluoropolymer Substances 0.000 title claims abstract description 24
- 238000002360 preparation method Methods 0.000 title description 21
- 239000010410 layer Substances 0.000 claims abstract description 297
- 239000012790 adhesive layer Substances 0.000 claims abstract description 201
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 175
- 239000011737 fluorine Substances 0.000 claims abstract description 175
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims abstract description 174
- 229920000642 polymer Polymers 0.000 claims abstract description 174
- 229920001721 polyimide Polymers 0.000 claims abstract description 107
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 104
- 239000004642 Polyimide Substances 0.000 claims abstract description 102
- 239000011889 copper foil Substances 0.000 claims abstract description 90
- 239000011265 semifinished product Substances 0.000 claims description 56
- 239000011347 resin Substances 0.000 claims description 49
- 229920005989 resin Polymers 0.000 claims description 49
- 239000002904 solvent Substances 0.000 claims description 39
- 239000000853 adhesive Substances 0.000 claims description 35
- 230000001070 adhesive effect Effects 0.000 claims description 35
- 229920001577 copolymer Polymers 0.000 claims description 20
- 239000010408 film Substances 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 11
- -1 polytetrafluoroethylene Polymers 0.000 claims description 10
- 229920001343 polytetrafluoroethylene Polymers 0.000 claims description 10
- 239000004810 polytetrafluoroethylene Substances 0.000 claims description 10
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 claims description 8
- 239000005977 Ethylene Substances 0.000 claims description 8
- 238000010521 absorption reaction Methods 0.000 claims description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 8
- 239000003822 epoxy resin Substances 0.000 claims description 7
- 229920000647 polyepoxide Polymers 0.000 claims description 7
- 239000004925 Acrylic resin Substances 0.000 claims description 6
- 229920000178 Acrylic resin Polymers 0.000 claims description 6
- 229920000052 poly(p-xylylene) Polymers 0.000 claims description 6
- 229920002379 silicone rubber Polymers 0.000 claims description 6
- 239000004945 silicone rubber Substances 0.000 claims description 6
- XQUPVDVFXZDTLT-UHFFFAOYSA-N 1-[4-[[4-(2,5-dioxopyrrol-1-yl)phenyl]methyl]phenyl]pyrrole-2,5-dione Chemical compound O=C1C=CC(=O)N1C(C=C1)=CC=C1CC1=CC=C(N2C(C=CC2=O)=O)C=C1 XQUPVDVFXZDTLT-UHFFFAOYSA-N 0.000 claims description 5
- 229920003192 poly(bis maleimide) Polymers 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 4
- 239000009719 polyimide resin Substances 0.000 claims description 4
- 229920002803 thermoplastic polyurethane Polymers 0.000 claims description 4
- BQCIDUSAKPWEOX-UHFFFAOYSA-N 1,1-Difluoroethene Chemical compound FC(F)=C BQCIDUSAKPWEOX-UHFFFAOYSA-N 0.000 claims description 3
- 239000002033 PVDF binder Substances 0.000 claims description 3
- QYKIQEUNHZKYBP-UHFFFAOYSA-N Vinyl ether Chemical compound C=COC=C QYKIQEUNHZKYBP-UHFFFAOYSA-N 0.000 claims description 3
- XUCNUKMRBVNAPB-UHFFFAOYSA-N fluoroethene Chemical compound FC=C XUCNUKMRBVNAPB-UHFFFAOYSA-N 0.000 claims description 3
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 claims description 3
- HCDGVLDPFQMKDK-UHFFFAOYSA-N hexafluoropropylene Chemical group FC(F)=C(F)C(F)(F)F HCDGVLDPFQMKDK-UHFFFAOYSA-N 0.000 claims description 3
- 229920002981 polyvinylidene fluoride Polymers 0.000 claims description 3
- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical group FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 claims description 3
- 239000002952 polymeric resin Substances 0.000 claims description 2
- 229920003002 synthetic resin Polymers 0.000 claims description 2
- 239000011248 coating agent Substances 0.000 claims 6
- 238000000576 coating method Methods 0.000 claims 6
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 claims 1
- 125000001153 fluoro group Chemical group F* 0.000 claims 1
- 150000002466 imines Chemical class 0.000 claims 1
- 230000005540 biological transmission Effects 0.000 abstract description 6
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 239000003292 glue Substances 0.000 description 18
- 229910052802 copper Inorganic materials 0.000 description 14
- 239000010949 copper Substances 0.000 description 14
- 238000004519 manufacturing process Methods 0.000 description 10
- 239000000047 product Substances 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 9
- 238000010586 diagram Methods 0.000 description 9
- 239000004696 Poly ether ether ketone Substances 0.000 description 5
- 229920002530 polyetherether ketone Polymers 0.000 description 5
- 239000002131 composite material Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000003475 lamination Methods 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000006835 compression Effects 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 229920002493 poly(chlorotrifluoroethylene) Polymers 0.000 description 2
- 239000005023 polychlorotrifluoroethylene (PCTFE) polymer Substances 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- RNFJDJUURJAICM-UHFFFAOYSA-N 2,2,4,4,6,6-hexaphenoxy-1,3,5-triaza-2$l^{5},4$l^{5},6$l^{5}-triphosphacyclohexa-1,3,5-triene Chemical compound N=1P(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP=1(OC=1C=CC=CC=1)OC1=CC=CC=C1 RNFJDJUURJAICM-UHFFFAOYSA-N 0.000 description 1
- 229920002799 BoPET Polymers 0.000 description 1
- KXDHJXZQYSOELW-UHFFFAOYSA-M Carbamate Chemical compound NC([O-])=O KXDHJXZQYSOELW-UHFFFAOYSA-M 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 229920006378 biaxially oriented polypropylene Polymers 0.000 description 1
- 239000011127 biaxially oriented polypropylene Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229920001038 ethylene copolymer Polymers 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 239000011094 fiberboard Substances 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000003063 flame retardant Substances 0.000 description 1
- 239000006261 foam material Substances 0.000 description 1
- 150000003949 imides Chemical class 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000000123 paper Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 229920000307 polymer substrate Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920005574 polyvinylidene vinyl fluoride Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0313—Organic insulating material
- H05K1/032—Organic insulating material consisting of one material
- H05K1/0346—Organic insulating material consisting of one material containing N
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
- B32B15/08—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/20—Layered products comprising a layer of metal comprising aluminium or copper
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/06—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material
- B32B27/08—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/28—Layered products comprising a layer of synthetic resin comprising synthetic resins not wholly covered by any one of the sub-groups B32B27/30 - B32B27/42
- B32B27/281—Layered products comprising a layer of synthetic resin comprising synthetic resins not wholly covered by any one of the sub-groups B32B27/30 - B32B27/42 comprising polyimides
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B33/00—Layered products characterised by particular properties or particular surface features, e.g. particular surface coatings; Layered products designed for particular purposes not covered by another single class
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
- B32B37/10—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the pressing technique, e.g. using action of vacuum or fluid pressure
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
- B32B37/12—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by using adhesives
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B38/00—Ancillary operations in connection with laminating processes
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B38/00—Ancillary operations in connection with laminating processes
- B32B38/16—Drying; Softening; Cleaning
- B32B38/164—Drying
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
- B32B7/04—Interconnection of layers
- B32B7/08—Interconnection of layers by mechanical means
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
- B32B7/04—Interconnection of layers
- B32B7/12—Interconnection of layers using interposed adhesives or interposed materials with bonding properties
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/20—Adhesives in the form of films or foils characterised by their carriers
- C09J7/29—Laminated material
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B38/00—Ancillary operations in connection with laminating processes
- B32B2038/0052—Other operations not otherwise provided for
- B32B2038/0076—Curing, vulcanising, cross-linking
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B38/00—Ancillary operations in connection with laminating processes
- B32B38/16—Drying; Softening; Cleaning
- B32B38/164—Drying
- B32B2038/168—Removing solvent
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2307/00—Properties of the layers or laminate
- B32B2307/70—Other properties
- B32B2307/732—Dimensional properties
- B32B2307/734—Dimensional stability
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2457/00—Electrical equipment
- B32B2457/08—PCBs, i.e. printed circuit boards
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2479/00—Presence of polyamine or polyimide
- C09J2479/08—Presence of polyamine or polyimide polyimide
- C09J2479/086—Presence of polyamine or polyimide polyimide in the substrate
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/01—Dielectrics
- H05K2201/0137—Materials
- H05K2201/015—Fluoropolymer, e.g. polytetrafluoroethylene [PTFE]
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/01—Dielectrics
- H05K2201/0137—Materials
- H05K2201/0154—Polyimide
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Fluid Mechanics (AREA)
- Laminated Bodies (AREA)
Abstract
Description
本發明係關於可撓性線路板(FPC)之技術領域,特別是關於低Dk/Df的高頻單面銅箔基板、可撓性背膠銅箔基板(FRCC)、雙面銅箔基板、覆蓋膜及黏結片(Bondply),提供5G及毫米波應用解決方案。 The present invention relates to the technical field of flexible circuit boards (FPC), especially low-Dk/Df high-frequency single-sided copper foil substrates, flexible back adhesive copper foil substrates (FRCC), double-sided copper foil substrates, Cover film and bonding sheet (Bondply), provide 5G and millimeter wave application solutions.
印刷電路板是電子產品中不可或缺的材料,隨著消費性電子產品需求成長,對於印刷電路板的需求亦是與日俱增。由於軟性印刷電路板具有可撓曲性及可三度空間配線等特性,在科技化電子產品強調輕薄短小以及可撓曲性的發展趨勢下,目前已被廣泛應用電腦及其週邊設備、通訊產品以及消費性電子產品等領域。 Printed circuit boards are an indispensable material in electronic products. As the demand for consumer electronic products grows, the demand for printed circuit boards is also increasing day by day. Because flexible printed circuit boards have the characteristics of flexibility and three-dimensional wiring, under the development trend of scientific and technological electronic products emphasizing lightness, thinness, shortness, and flexibility, they have been widely used in computers and their peripherals and communication products. And consumer electronics and other fields.
再者,由於電子產品朝高頻高速的應用趨勢發展,使得現今電子產品都需要使用高頻電路用之軟性印刷電路基板,以使電子產品能高頻及高速運作。在眾多被用作為高頻電路用印刷電路基板的材料中,除了陶瓷和發泡材料外,以氟系樹脂居多,其原因在於氟系樹脂具有低介電常數和低介電損耗等優異的電氣特性,如聚四氟乙烯(PTFE)氟系基板在頻率10GHz下之介電常數 (Dielectric constant,Dk)約為2.1、介電損耗因子(Dielectric loss factor,Df)約為0.0004,其亦具有約為0.03%的低吸水率的優異性質。 Furthermore, due to the development of electronic products toward high-frequency and high-speed applications, today's electronic products need to use flexible printed circuit substrates for high-frequency circuits to enable electronic products to operate at high frequencies and high speeds. Among the many materials used as printed circuit boards for high-frequency circuits, in addition to ceramics and foam materials, fluorine-based resins are mostly used. The reason is that fluorine-based resins have excellent electrical properties such as low dielectric constant and low dielectric loss. Characteristics, such as the dielectric constant of polytetrafluoroethylene (PTFE) fluorine-based substrates at a frequency of 10GHz (Dielectric constant, Dk) is about 2.1, and dielectric loss factor (Df) is about 0.0004. It also has excellent properties of low water absorption of about 0.03%.
然而,氟系樹脂的表面性質具有極低表面能,因此不易黏著於金屬,而容易造成脫層現象,使氟系基板的良率不高,需要表面處理,對銅箔的選擇較少,難以使用具低傳輸損失的低粗糙度銅箔,或須藉由其他膠黏層加以黏著。另外,其高熱膨脹係數(約200ppm/℃)易造成尺寸安定性不佳,尺寸的變化會直接影響到導體線路的製作及對位偏移等問題,尤其是高密度化要求,線路越來越微細的狀況下,影響程度則更為明顯。此外,氟系樹脂亦受到製程技術的限制,對製造設備的要求高且需要在較高溫環境(>280℃)下才可以操作,隨之也造成了其膜厚不均勻的問題。膜厚不均會造成電路板的阻抗值控制不易,且高溫壓合制程會造成PTFE擠壓影響鍍銅的導通性、形成斷路,進而造成信賴度不佳,可靠度下降;此外,又面臨了PTFE多為片狀不能使用卷對卷的壓合工藝,導致加工困難、量產性低、耗材更多。另外在表面貼裝(SMT)高溫制程或其它FPC制程,例如彎折、強酸強鹼藥液制程時,接著強度不足,造成良率下降。 However, the surface properties of fluorine-based resins have extremely low surface energy, so they are not easy to adhere to metals and easily cause delamination, which makes the yield of fluorine-based substrates low, requires surface treatment, and has fewer choices of copper foils. Use low-roughness copper foil with low transmission loss, or need to be adhered by other adhesive layers. In addition, its high thermal expansion coefficient (approximately 200ppm/℃) is likely to cause poor dimensional stability, and dimensional changes will directly affect the production of conductor lines and alignment problems, especially for high-density requirements. Lines are becoming more and more demanding. Under subtle conditions, the degree of influence is even more obvious. In addition, fluorine-based resins are also limited by process technology, require high manufacturing equipment and need to be operated in a higher temperature environment (>280°C), which also causes the problem of uneven film thickness. Uneven film thickness will make it difficult to control the impedance value of the circuit board, and the high-temperature pressing process will cause the PTFE extrusion to affect the continuity of the copper plating and form an open circuit, which will result in poor reliability and reduced reliability; in addition, it is facing PTFE is mostly in the form of sheets and cannot use the roll-to-roll lamination process, resulting in processing difficulties, low mass production, and more consumables. In addition, in surface mount (SMT) high temperature manufacturing processes or other FPC manufacturing processes, such as bending, strong acid and strong alkali chemical solutions, the bonding strength is insufficient, resulting in a decrease in yield.
舉凡於第US 3676566 A號美國專利提出聚醯亞胺和氟碳聚合物的複合層狀結構,第TW M531056 U號臺灣專利、CN 103096612 B號中國專利、第CN 202276545 U號中國專利、第TW M422159 U1號臺灣專利、第TW M436933 U1號臺灣專利、第CN 202773176 U號中國專利等提出高頻基板結構,第CN 105269884 B號中國專利提出複合式高頻雙面銅箔基板及其製造方法,第TW I645977 B號臺灣專利提出PI型高頻高速傳輸用雙面銅箔基板及其製備方法,第CN 207772540 U號中國專利提出LCP或氟系聚合物高頻高傳輸雙面銅箔基板,第CN 207744230 U號中國專利提出複合式氟系聚合物高頻高傳輸雙面銅箔基板 及製備方法,第CN 105295753 B號中國專利提出高頻黏著膠水層的結構及其製備方法,第CN 105282959 B號中國專利提出具有低Dk和Df特性的高頻覆蓋膜及其製備方法,上述前期專利並無揭露與本發明相同結構及性質的氟系聚合物基板、覆蓋膜及黏結片。 For example, US Patent No. US 3676566 A proposes a composite layered structure of polyimide and fluorocarbon polymer, Taiwan Patent No. TW M531056 U, Chinese Patent No. CN 103096612 B, Chinese Patent No. CN 202276545 U, and Chinese Patent No. TW Taiwan Patent No. M422159 U1, Taiwan Patent No. TW M436933 U1, Chinese Patent No. CN 202773176 U, etc. propose high-frequency substrate structures, and Chinese patent No. CN 105269884 B proposes a composite high-frequency double-sided copper foil substrate and its manufacturing method. Taiwan Patent No. TW I645977 B proposes PI-type double-sided copper foil substrate for high-frequency and high-speed transmission and its preparation method. Chinese Patent No. CN 207772540 U proposes LCP or fluorine-based polymer high-frequency and high-transmission double-sided copper foil substrate. CN 207744230 No. U Chinese patent proposes a composite fluorine-based polymer high-frequency and high-transmission double-sided copper foil substrate And the preparation method, the Chinese patent No. CN 105295753 B proposes the structure of the high-frequency adhesive layer and the preparation method thereof, and the Chinese patent No. CN 105282959 B proposes a high-frequency cover film with low Dk and Df characteristics and the preparation method thereof. The patent does not disclose the fluorine-based polymer substrate, cover film and adhesive sheet with the same structure and properties as the present invention.
本發明主要解決的技術問題是提供一種氟系聚合物高頻基板、覆蓋膜、黏結片及其製備方法,具有極低的Dk/Df特性,能夠大幅度減少信號傳輸的損失,並具有高接著強度、低熱膨脹係數及高尺寸安定性,且能夠使用低溫壓合以及快壓機設備。 The main technical problem to be solved by the present invention is to provide a fluorine-based polymer high-frequency substrate, cover film, adhesive sheet and preparation method thereof, which has extremely low Dk/Df characteristics, can greatly reduce the loss of signal transmission, and has high adhesion. Strength, low thermal expansion coefficient and high dimensional stability, and can use low-temperature compression and fast press equipment.
為解決上述技術問題,本發明提供一種氟系聚合物高頻基板,其係單面覆銅基板,包括依序疊合之銅箔層、第一低介電膠層、氟系聚合物層、第二低介電膠層以及聚醯亞胺層之結構,且該單面覆銅基板的總厚度為41μm至385μm。 In order to solve the above technical problems, the present invention provides a fluorine-based polymer high-frequency substrate, which is a single-sided copper-clad substrate, including a copper foil layer, a first low-dielectric adhesive layer, a fluorine-based polymer layer, The structure of the second low dielectric adhesive layer and the polyimide layer, and the total thickness of the single-sided copper-clad substrate is 41 μm to 385 μm.
於一具體實施態樣中,該氟系聚合物高頻基板復包括第三低介電膠層,成為一可撓性背膠銅箔基板(FRCC),該第三低介電膠層係形成於該聚醯亞胺層上,使該聚醯亞胺層位於該第二低介電膠層和第三低介電膠層之間,且該氟系聚合物高頻基板的總厚度為46μm至435μm。 In a specific embodiment, the fluorine-based polymer high-frequency substrate includes a third low-dielectric adhesive layer to become a flexible back adhesive copper foil substrate (FRCC), and the third low-dielectric adhesive layer is formed On the polyimide layer, the polyimide layer is positioned between the second low-dielectric glue layer and the third low-dielectric glue layer, and the total thickness of the fluorine-based polymer high-frequency substrate is 46 μm To 435μm.
於一具體實施態樣中,該氟系聚合物高頻基板復包括形成於該第三低介電膠層上之另一銅箔層,成為一雙面覆銅基板,且該氟系聚合物高頻基板的總厚度為47μm至470μm。 In a specific embodiment, the fluorine-based polymer high-frequency substrate includes another copper foil layer formed on the third low-dielectric adhesive layer to become a double-sided copper-clad substrate, and the fluorine-based polymer The total thickness of the high-frequency substrate is 47 μm to 470 μm.
本發明亦提供一種氟系聚合物高頻基板,其係單面覆銅基板,包括依序疊合之銅箔層、第一低介電膠層、第一聚醯亞胺層、第二低介電膠層、 氟系聚合物層、第三低介電膠層以及第二聚醯亞胺層之結構,且該單面覆銅基板的總厚度為51μm至485μm。 The present invention also provides a fluorine-based polymer high-frequency substrate, which is a single-sided copper-clad substrate, including a copper foil layer, a first low-dielectric adhesive layer, a first polyimide layer, and a second low-dielectric layer laminated in sequence. Dielectric glue layer, The structure of the fluorine-based polymer layer, the third low dielectric adhesive layer and the second polyimide layer, and the total thickness of the single-sided copper-clad substrate is 51 μm to 485 μm.
於一具體實施態樣中,該氟系聚合物高頻基板復包括第四低介電膠層,成為一可撓性背膠銅箔基板(FRCC),該第四低介電膠層係形成於該第二聚醯亞胺層上,使該第二聚醯亞胺層位於該第三低介電膠層和第四低介電膠層之間,且該氟系聚合物高頻基板的總厚度為56μm至535μm。 In a specific embodiment, the fluorine-based polymer high-frequency substrate includes a fourth low-dielectric adhesive layer to become a flexible back adhesive copper foil substrate (FRCC), and the fourth low-dielectric adhesive layer is formed On the second polyimide layer, the second polyimide layer is located between the third low-dielectric glue layer and the fourth low-dielectric glue layer, and the fluorine-based polymer high-frequency substrate The total thickness is 56 μm to 535 μm.
於一具體實施態樣中,該氟系聚合物高頻基板復包括形成於該第四低介電膠層上之另一銅箔層,成為一雙面覆銅基板,且該氟系聚合物高頻基板的總厚度為57μm至570μm。 In a specific embodiment, the fluorine-based polymer high-frequency substrate includes another copper foil layer formed on the fourth low-dielectric adhesive layer to become a double-sided copper-clad substrate, and the fluorine-based polymer The total thickness of the high-frequency substrate is 57 μm to 570 μm.
於一具體實施態樣中,所使用的氟系聚合物層係介電常數(Dk)值為1.0至3.0(10GHz)、介電損失因子(Df)值為0.0001至0.002(10GHz)且吸水率為0.001至0.1%之絕緣聚合物層。 In a specific embodiment, the dielectric constant (Dk) of the fluorine-based polymer layer used is 1.0 to 3.0 (10GHz), the dielectric loss factor (Df) is 0.0001 to 0.002 (10GHz), and the water absorption is It is 0.001 to 0.1% of insulating polymer layer.
於一具體實施態樣中,所使用的銅箔層的厚度為1μm至35μm,所使用的第一、第二、第三及第四低介電膠層各者的厚度為5μm至50μm,所使用的氟系聚合物層的厚度為25μm至200μm,所使用的聚醯亞胺層、第一及第二聚醯亞胺層各者的厚度為5μm至50μm。 In a specific embodiment, the thickness of the copper foil layer used is 1 μm to 35 μm, and the thickness of each of the first, second, third, and fourth low-dielectric adhesive layers used is 5 μm to 50 μm. The thickness of the fluorine-based polymer layer used is 25 μm to 200 μm, and the thickness of each of the polyimide layer and the first and second polyimide layers used is 5 μm to 50 μm.
於一具體實施態樣中,所使用的銅箔層係Rz值為0μm至1.2μm、Ra值為0μm至0.4μm之低輪廓銅箔層,且該銅箔層為壓延銅箔層或電解銅箔層。 In a specific embodiment, the copper foil layer used is a low-profile copper foil layer with an Rz value of 0 μm to 1.2 μm and an Ra value of 0 μm to 0.4 μm, and the copper foil layer is a rolled copper foil layer or electrolytic copper Foil layer.
於一具體實施態樣中,所使用的第一、第二、第三及第四低介電膠層各者係Dk值為2.0至3.5(10GHz)且Df值為0.001至0.010(10GHz)之膠層,而所使用的聚醯亞胺層、第一及第二聚醯亞胺層各者係Dk值為2.0至3.5(10GHz)且Df值為0.002至0.010(10GHz)之絕緣聚合物層。 In a specific implementation aspect, each of the first, second, third, and fourth low-k layer used has a Dk value of 2.0 to 3.5 (10GHz) and a Df value of 0.001 to 0.010 (10GHz) Adhesive layer, and the polyimide layer, the first and second polyimide layers used are each an insulating polymer layer with a Dk value of 2.0 to 3.5 (10GHz) and a Df value of 0.002 to 0.010 (10GHz) .
於一具體實施態樣中,所使用的氟系聚合物層包括氟系聚合物樹脂,該氟系聚合物樹脂係選自聚四氟乙烯、聚偏氟乙烯、氟乙烯與乙烯基醚共 聚物、四氟乙烯與乙烯的共聚物、聚三氟氯乙烯與乙烯的共聚物、六氟丙烯與偏氟乙烯的共聚物、四氟乙烯-全氟烷基乙烯基醚共聚物、聚三氟氯乙烯、四氟乙烯-六氟丙稀共聚物、乙烯-氟乙烯共聚物以及四氟乙烯-六氟丙烯-三氟乙烯共聚物中的至少一種。 In a specific embodiment, the fluorine-based polymer layer used includes a fluorine-based polymer resin selected from the group consisting of polytetrafluoroethylene, polyvinylidene fluoride, vinyl fluoride and vinyl ether. Polymers, copolymers of tetrafluoroethylene and ethylene, copolymers of polychlorotrifluoroethylene and ethylene, copolymers of hexafluoropropylene and vinylidene fluoride, tetrafluoroethylene-perfluoroalkyl vinyl ether copolymer, polytrifluoroethylene At least one of chlorofluoroethylene, tetrafluoroethylene-hexafluoropropylene copolymer, ethylene-fluoroethylene copolymer, and tetrafluoroethylene-hexafluoropropylene-trifluoroethylene copolymer.
於一具體實施態樣中,所使用的第一、第二、第三及第四低介電膠層各者包括樹脂,該樹脂係選自氟系樹脂、環氧樹脂、丙烯酸系樹脂、胺基甲酸酯系樹脂、矽橡膠系樹脂、聚對環二甲苯系樹脂、雙馬來醯亞胺系樹脂和聚醯亞胺系樹脂中的至少一種。 In a specific embodiment, each of the first, second, third, and fourth low-dielectric adhesive layers used includes a resin selected from the group consisting of fluorine resins, epoxy resins, acrylic resins, and amines. At least one of carbamate-based resin, silicone rubber-based resin, parylene-based resin, bismaleimide-based resin, and polyimide-based resin.
除了氟系聚合物高頻基板之外,本發明亦提供一種氟系聚合物覆蓋膜,包括依序疊合之第一低介電膠層、氟系聚合物層、第二低介電膠層以及聚醯亞胺層之結構,且該氟系聚合物覆蓋膜的總厚度為40μm至350μm。 In addition to the fluorine-based polymer high-frequency substrate, the present invention also provides a fluorine-based polymer cover film, which includes a first low-dielectric adhesive layer, a fluorine-based polymer layer, and a second low-dielectric adhesive layer laminated in sequence And the structure of the polyimide layer, and the total thickness of the fluorine-based polymer cover film is 40 μm to 350 μm.
本發明亦提供一種氟系聚合物覆蓋膜,包括依序疊合之第一低介電膠層、第一聚醯亞胺層、第二低介電膠層、氟系聚合物層、第三低介電膠層以及第二聚醯亞胺層之結構,且該氟系聚合物覆蓋膜的總厚度為50μm至450μm。 The present invention also provides a fluorine-based polymer cover film, including a first low-dielectric adhesive layer, a first polyimide layer, a second low-dielectric adhesive layer, a fluorine-based polymer layer, and a third The structure of the low dielectric adhesive layer and the second polyimide layer, and the total thickness of the fluorine-based polymer covering film is 50 μm to 450 μm.
除了上述產品以外,本發明還提供一種氟系聚合物黏結片,包括依序疊合之第一低介電膠層、氟系聚合物層、第二低介電膠層、聚醯亞胺層以及第三低介電膠層之結構,且該氟系聚合物黏結片的總厚度為45μm至400μm。 In addition to the above products, the present invention also provides a fluorine-based polymer adhesive sheet, which includes a first low-dielectric adhesive layer, a fluorine-based polymer layer, a second low-dielectric adhesive layer, and a polyimide layer laminated in sequence. And the structure of the third low-dielectric adhesive layer, and the total thickness of the fluorine-based polymer bonding sheet is 45 μm to 400 μm.
本發明還提供一種氟系聚合物黏結片,包括依序疊合之第一低介電膠層、第一聚醯亞胺層、第二低介電膠層、氟系聚合物層、第三低介電膠層、第二聚醯亞胺層以及第四低介電膠層之結構,且該氟系聚合物黏結片的總厚度為55μm至500μm。 The present invention also provides a fluorine-based polymer adhesive sheet, which includes a first low-dielectric adhesive layer, a first polyimide layer, a second low-dielectric adhesive layer, a fluorine-based polymer layer, and a third The structure of the low dielectric adhesive layer, the second polyimide layer and the fourth low dielectric adhesive layer, and the total thickness of the fluorine-based polymer bonding sheet is 55 μm to 500 μm.
本發明之氟系聚合物高頻基板(氟系聚合物單面覆銅基板)的製備方法,包括: The preparation method of the fluorine-based polymer high-frequency substrate (fluorine-based polymer single-sided copper-clad substrate) of the present invention includes:
將該第一低介電膠層塗布於該氟系聚合物層的表面上,於60℃至180℃溫度範圍內去除溶劑,再將該第一低介電膠層與該銅箔層壓合,得到半成品A; Coat the first low-dielectric adhesive layer on the surface of the fluoropolymer layer, remove the solvent at a temperature range of 60°C to 180°C, and then laminate the first low-dielectric adhesive layer with the copper foil , Get semi-finished product A;
將該第二低介電膠層塗布於該聚醯亞胺層的表面上,於60℃至180℃溫度範圍內去除溶劑,再將該第二低介電膠層與該半成品A之氟系聚合物層壓合,得到半成品B;以及 The second low-dielectric adhesive layer is coated on the surface of the polyimide layer, the solvent is removed at a temperature range of 60°C to 180°C, and then the second low-dielectric adhesive layer and the fluorine-based layer of the semi-finished product A The polymer is laminated to obtain semi-finished product B; and
將該半成品B進行160℃至200℃、5小時以上之固化,得到成品氟系聚合物單面覆銅基板。 The semi-finished product B is cured at 160°C to 200°C for more than 5 hours to obtain a finished fluorine-based polymer single-sided copper-clad substrate.
本發明之氟系聚合物高頻基板(氟系聚合物FRCC)的製備方法,包括: The preparation method of the fluorine-based polymer high-frequency substrate (fluorine-based polymer FRCC) of the present invention includes:
將該第一低介電膠層塗布於該氟系聚合物層的表面上,於60℃至180℃溫度範圍內去除溶劑,再將該第一低介電膠層與該銅箔層壓合,得到半成品A; Coat the first low-dielectric adhesive layer on the surface of the fluoropolymer layer, remove the solvent at a temperature range of 60°C to 180°C, and then laminate the first low-dielectric adhesive layer with the copper foil , Get semi-finished product A;
將該第二低介電膠層塗布於該聚醯亞胺層的表面上,於60℃至180℃溫度範圍內去除溶劑,再將該第二低介電膠層與該半成品A之氟系聚合物層壓合,得到半成品B; The second low-dielectric adhesive layer is coated on the surface of the polyimide layer, the solvent is removed at a temperature range of 60°C to 180°C, and then the second low-dielectric adhesive layer and the fluorine-based layer of the semi-finished product A The polymer is laminated to obtain semi-finished product B;
將該半成品B進行160℃至200℃、5小時以上之固化,得到半成品C;以及 Curing the semi-finished product B at 160°C to 200°C for more than 5 hours to obtain the semi-finished product C; and
將該第三低介電膠層塗布於該半成品C之聚醯亞胺層的另一表面上,於60℃至180℃溫度範圍內去除溶劑,再將該第三低介電膠層與離型層壓合,得到成品氟系聚合物可撓性背膠銅箔基板。 The third low-dielectric adhesive layer is coated on the other surface of the polyimide layer of the semi-finished product C, the solvent is removed in the temperature range of 60°C to 180°C, and the third low-dielectric adhesive layer is separated from the Type lamination to obtain a finished fluorine-based polymer flexible back adhesive copper foil substrate.
本發明之氟系聚合物高頻基板(氟系聚合物雙面覆銅基板)的製備方法,包括: The preparation method of the fluorine-based polymer high-frequency substrate (fluorine-based polymer double-sided copper-clad substrate) of the present invention includes:
將該第一低介電膠層塗布於該氟系聚合物層的表面上,於60℃至180℃溫度範圍內去除溶劑,再將該第一低介電膠層與該銅箔層壓合,得到半成品A; Coat the first low-dielectric adhesive layer on the surface of the fluoropolymer layer, remove the solvent at a temperature range of 60°C to 180°C, and then laminate the first low-dielectric adhesive layer with the copper foil , Get semi-finished product A;
將該第三低介電膠層塗布於該聚醯亞胺層的表面上,於60℃至180℃溫度範圍內去除溶劑,再將該第三低介電膠層與該另一銅箔層壓合,得到半成品B; The third low-dielectric adhesive layer is coated on the surface of the polyimide layer, and the solvent is removed in a temperature range of 60°C to 180°C, and then the third low-dielectric adhesive layer and the other copper foil layer Press to obtain semi-finished product B;
將該第二低介電膠層塗布於該半成品A之氟系聚合物層的另一表面上,於60℃至180℃溫度範圍內去除溶劑,再將該第二低介電膠層與該半成品B之聚醯亞胺層壓合,得到半成品C;以及 The second low-dielectric adhesive layer is coated on the other surface of the fluorine-based polymer layer of the semi-finished product A, and the solvent is removed within a temperature range of 60°C to 180°C, and then the second low-dielectric adhesive layer and the The polyimide of semi-finished product B is laminated to obtain semi-finished product C; and
將該半成品C進行160℃至200℃、5小時以上之固化,得到成品氟系聚合物雙面覆銅基板。 The semi-finished product C is cured at 160°C to 200°C for more than 5 hours to obtain a finished fluoropolymer double-sided copper-clad substrate.
本發明之氟系聚合物覆蓋膜的製備方法,包括: The preparation method of the fluorine-based polymer covering film of the present invention includes:
將該第二低介電膠層塗布於該聚醯亞胺層的表面上,於60℃至180℃溫度範圍內去除溶劑,再將該第二低介電膠層與該氟系聚合物層壓合;以及 The second low-dielectric adhesive layer is coated on the surface of the polyimide layer, the solvent is removed at a temperature range of 60°C to 180°C, and then the second low-dielectric adhesive layer and the fluorine-based polymer layer Pressing; and
將該第一低介電膠層塗布於該氟系聚合物層的另一表面上,於60℃至180℃溫度範圍內去除溶劑,再將該第一低介電膠層與離型層壓合,得到成品氟系聚合物覆蓋膜。 The first low-dielectric adhesive layer is coated on the other surface of the fluorine-based polymer layer, the solvent is removed in a temperature range of 60°C to 180°C, and then the first low-dielectric adhesive layer is laminated with a release Together, the finished fluoropolymer covering film is obtained.
本發明之氟系聚合物黏結片的製備方法,包括: The preparation method of the fluorine-based polymer adhesive sheet of the present invention includes:
將該第二低介電膠層塗布於該聚醯亞胺層的表面上,於60℃至180℃溫度範圍內去除溶劑,再將該第二低介電膠層與該氟系聚合物層壓合; The second low-dielectric adhesive layer is coated on the surface of the polyimide layer, the solvent is removed at a temperature range of 60°C to 180°C, and then the second low-dielectric adhesive layer and the fluorine-based polymer layer Lamination;
將該第一低介電膠層塗布於該氟系聚合物層的另一表面上,於60℃至180℃溫度範圍內去除溶劑,再將該第一低介電膠層與離型層壓合;以及 The first low-dielectric adhesive layer is coated on the other surface of the fluorine-based polymer layer, the solvent is removed in a temperature range of 60°C to 180°C, and then the first low-dielectric adhesive layer is laminated with a release合; and
將該第三低介電膠層塗布於該聚醯亞胺層的另一表面上,於60℃至180℃溫度範圍內去除溶劑,再將該第三低介電膠層與離型層壓合,得到成品氟系聚合物黏結片。 The third low-dielectric adhesive layer is coated on the other surface of the polyimide layer, the solvent is removed in a temperature range of 60°C to 180°C, and the third low-dielectric adhesive layer is laminated with release Combined to obtain the finished fluorine-based polymer bonding sheet.
本發明至少具有下述的有益效果: The present invention has at least the following beneficial effects:
本發明的高頻基板、覆蓋膜及黏結片均利用氟系聚合物本身的低Dk/Df特性,搭配具有低Dk/Df的低介電膠層、低粗糙度的銅箔,使成品具低介電損失,有利於高頻高速傳輸。此外,利用低介電膠層黏接銅箔及氟系聚合物層, 並利用聚醯亞胺(PI)膜作為支撐,使基板擁有良好接著強度、低熱膨脹係數及高尺寸安定性。 The high-frequency substrate, cover film and adhesive sheet of the present invention all use the low Dk/Df characteristics of the fluoropolymer itself, combined with a low-dielectric adhesive layer with low Dk/Df, and a copper foil with low roughness, so that the finished product has a low Dk/Df characteristic. Dielectric loss is conducive to high-frequency and high-speed transmission. In addition, the copper foil and the fluorine-based polymer layer are bonded by a low-dielectric adhesive layer, And use polyimide (PI) film as a support, so that the substrate has good bonding strength, low thermal expansion coefficient and high dimensional stability.
本發明中的低介電膠層使FRCC和雙面銅箔基板適合低溫(低於180℃),可快速壓合而製得本發明的FPC,工藝加工性強,而且對製作設備要求低,進而降低生產成本,其設備操作性和加工性以及可量產性均優於現有的PTFE纖維板;更佳的是,由於適合低溫壓合,大大降低了製備FPC過程中線路氧化的風險。 The low-dielectric adhesive layer in the present invention makes FRCC and double-sided copper foil substrate suitable for low temperature (less than 180°C), and can be quickly laminated to make the FPC of the present invention, which has strong processability and low requirements for manufacturing equipment. Furthermore, the production cost is reduced, and the equipment operability, processability, and mass production are better than the existing PTFE fiberboard; better yet, because it is suitable for low-temperature compression, the risk of circuit oxidation during the preparation of FPC is greatly reduced.
本發明的氟系聚合物高頻基板/覆蓋膜,相較於PI及聚醚醚酮(PEEK)基板/覆蓋膜,具有極低Dk/Df,有利於高頻高速傳輸;而相較於PTFE基板,本發明的氟系聚合物高頻基板具良好的接著強度、低熱膨脹係數及高尺寸安定性。 The fluorine-based polymer high-frequency substrate/covering film of the present invention has extremely low Dk/Df compared to PI and polyether ether ketone (PEEK) substrates/covering films, which is conducive to high-frequency and high-speed transmission; and compared with PTFE The substrate, the fluorine-based polymer high-frequency substrate of the present invention has good bonding strength, low thermal expansion coefficient and high dimensional stability.
另外,本發明的製備方法不僅可以製造適宜厚度的單面及雙面銅箔基板,更可以輕易得到100μm以上的基材,可以應用于毫米波雷達、5G智慧型手機、Apple watch等設備。 In addition, the preparation method of the present invention can not only manufacture single-sided and double-sided copper foil substrates of suitable thickness, but also can easily obtain substrates of 100 μm or more, which can be applied to millimeter wave radar, 5G smart phones, Apple watches and other equipment.
100,200:單面覆銅基板 100,200: Single-sided copper clad substrate
101,201,301,401:銅箔層 101, 201, 301, 401: copper foil layer
102,202,302,402,502,602,701,801,901,1001:第一低介電膠層 102, 202, 302, 402, 502, 602, 701, 801, 901, 1001: the first low dielectric adhesive layer
103,205,303,405,503,605,702,804,902,1004:氟系聚合物層 103,205,303,405,503,605,702,804,902,1004: Fluorine-based polymer layer
104,204,304,404,504,604,703,803,903,1003:第二低介電膠層 104,204,304,404,504,604,703,803,903,1003: the second low dielectric layer
105,305,505,704,904:聚醯亞胺層 105,305,505,704,904: Polyimide layer
203,403,603,802,1002:第一聚醯亞胺層 203, 403, 603, 802, 1002: the first polyimide layer
206,306,406,506,606,805,905,1005:第三低介電膠層 206,306,406,506,606,805,905,1005: the third low dielectric layer
207,407,607,806,1006:第二聚醯亞胺層 207,407,607,806,1006: the second polyimide layer
300,400:可撓性背膠銅箔基板 300, 400: Flexible back adhesive copper foil substrate
307,409,705,807,906,1008:離型層 307,409,705,807,906,1008: Release layer
408,608,1007:第四低介電膠層 408,608,1007: the fourth low-dielectric adhesive layer
500,600:雙面覆銅基板 500, 600: Double-sided copper clad substrate
501,601:銅箔層 501,601: Copper foil layer
507,609:另一銅箔層 507,609: Another copper foil layer
700,800:覆蓋膜 700,800: Cover film
900,1000:黏結片 900, 1000: adhesive sheet
第1圖是本發明單面覆銅基板之具體實施態樣的結構示意圖。 Figure 1 is a schematic structural diagram of a specific implementation aspect of the single-sided copper clad substrate of the present invention.
第2圖是本發明單面覆銅基板之另一具體實施態樣的結構示意圖。 Figure 2 is a schematic structural view of another specific embodiment of the single-sided copper clad substrate of the present invention.
第3圖是本發明可撓性背膠銅箔基板(FRCC)之具體實施態樣的結構示意圖。 Figure 3 is a schematic structural diagram of a specific implementation aspect of the flexible back adhesive copper foil substrate (FRCC) of the present invention.
第4圖是本發明FRCC之另一具體實施態樣的結構示意圖。 Figure 4 is a schematic structural diagram of another specific embodiment of the FRCC of the present invention.
第5圖是本發明雙面覆銅基板之具體實施態樣的結構示意圖。 Fig. 5 is a schematic structural diagram of a specific implementation aspect of the double-sided copper clad substrate of the present invention.
第6圖是本發明雙面覆銅基板之另一具體實施態樣的結構示意圖。 FIG. 6 is a schematic structural diagram of another embodiment of the double-sided copper clad substrate of the present invention.
第7圖是本發明覆蓋膜之具體實施態樣的結構示意圖。 Figure 7 is a schematic structural diagram of a specific implementation aspect of the cover film of the present invention.
第8圖是本發明覆蓋膜之另一具體實施態樣的結構示意圖。 Figure 8 is a schematic structural diagram of another specific embodiment of the cover film of the present invention.
第9圖是本發明黏結片之具體實施態樣的結構示意圖。 Figure 9 is a schematic structural view of a specific implementation aspect of the adhesive sheet of the present invention.
第10圖是本發明黏結片之另一具體實施態樣的結構示意圖。 Figure 10 is a schematic structural view of another specific embodiment of the adhesive sheet of the present invention.
以下藉由特定的具體實施例說明本發明之實施方式,熟悉此技藝之人士可由本說明書所揭示之內容輕易地瞭解本發明之其他優點及功效。 The following specific examples illustrate the implementation of the present invention. Those familiar with the art can easily understand the other advantages and effects of the present invention from the content disclosed in this specification.
須知,本說明書所附圖式所繪示之結構、比例、大小等,均僅用以配合說明書所揭示之內容,以供熟悉此技藝之人士之瞭解與閱讀,並非用以限定本發明可實施之限定條件,故不具技術上之實質意義,任何結構之修飾、比例關係之改變或大小之調整,在不影響本發明所能產生之功效及所能達成之目的下,均應仍落在本發明所揭示之技術內容得能涵蓋之範圍內。同時,本說明書中所引用之如「上」、「第一」、「第二」、「第三」、「第四」、「半成品A」、「半成品B」、「半成品C」等之用語,亦僅為便於敘述之明瞭,而非用以限定本發明可實施之範圍,其相對關係之改變或調整,在無實質變更技術內容下,當亦視為本發明可實施之範疇。 It should be noted that the structure, ratio, size, etc. shown in the drawings in this manual are only used to match the content disclosed in the manual for the understanding and reading of those who are familiar with the art, and are not intended to limit the implementation of the present invention. Therefore, it does not have any technical significance. Any structural modification, proportional relationship change or size adjustment, without affecting the effects and objectives that can be achieved by the present invention, should still fall within the scope of the present invention. The technical content disclosed by the invention can be covered. At the same time, terms such as "on", "first", "second", "third", "fourth", "semi-finished product A", "semi-finished product B", "semi-finished product C", etc. are quoted in this manual It is also only for ease of description, not to limit the scope of implementation of the present invention. The change or adjustment of the relative relationship should be regarded as the scope of the implementation of the present invention without substantially changing the technical content.
如第1圖所示,其係氟系聚合物高頻基板之具體實施態樣的結構示意圖,具體而言,其係一種單面覆銅基板100,從上至下之結構依次為銅箔層101、第一低介電膠層102、氟系聚合物層103、第二低介電膠層104以及聚醯亞胺層105。本發明之單面覆銅基板100的總厚度可為41μm至385μm。
As shown in Figure 1, it is a schematic structural diagram of a specific implementation aspect of a fluorine-based polymer high-frequency substrate. Specifically, it is a single-sided copper-clad
如第2圖所示,係本發明氟系聚合物高頻基板之另一具體實施態樣,其係一種單面覆銅基板200,從上至下之結構依次為銅箔層201、第一低介電膠層202、第一聚醯亞胺層203、第二低介電膠層204、氟系聚合物層205、第三低介電膠層206以及第二聚醯亞胺層207。本發明之單面覆銅基板200的總厚度可為51μm至485μm。
As shown in Figure 2, it is another specific embodiment of the fluorine-based polymer high-frequency substrate of the present invention, which is a single-sided copper-clad
參照第3圖,係本發明氟系聚合物高頻基板之又一具體實施態樣,其係一種可撓性背膠銅箔基板(FRCC)300,從上至下之結構依次為銅箔層301、第一低介電膠層302、氟系聚合物層303、第二低介電膠層304、聚醯亞胺層305以及第三低介電膠層306,且第三低介電膠層306的表面貼合有離型層307。本發明之可撓性背膠銅箔基板300的總厚度可為46μm至435μm。
Referring to Figure 3, it is another embodiment of the fluorine-based polymer high-frequency substrate of the present invention, which is a flexible back adhesive copper foil substrate (FRCC) 300, and the structure from top to bottom is the copper foil layer. 301, the first low-
參照第4圖,係本發明氟系聚合物高頻基板之又一具體實施態樣,其亦為一種FRCC 400,從上至下之結構依次為銅箔層401、第一低介電膠層402、第一聚醯亞胺層403、第二低介電膠層404、氟系聚合物層405、第三低介電膠層406、第二聚醯亞胺層407以及第四低介電膠層408,且第四低介電膠層408的表面貼合有離型層409。本發明之FRCC 400的總厚度可為56μm至535μm。
Referring to Figure 4, it is another specific embodiment of the fluorine-based polymer high-frequency substrate of the present invention, which is also a
復參照第5圖,係本發明氟系聚合物高頻基板之又一具體實施態樣,其係一種雙面覆銅基板500,從上至下之結構依次為銅箔層501、第一低介電膠層502、氟系聚合物層503、第二低介電膠層504、聚醯亞胺層505、第三低介電膠層506以及另一銅箔層507。本發明之雙面覆銅基板500的總厚度可為47μm至470μm。
Referring again to Figure 5, it is another embodiment of the fluorine-based polymer high-frequency substrate of the present invention, which is a double-sided copper-clad
再參照第6圖,係本發明氟系聚合物高頻基板之又一具體實施態樣,其亦為一種雙面覆銅基板600,從上至下之結構依次為銅箔層601、第一低介電膠層602、第一聚醯亞胺層603、第二低介電膠層604、氟系聚合物層605、第三
低介電膠層606、第二聚醯亞胺層607、第四低介電膠層608以及另一銅箔層609。本發明之雙面覆銅基板600的總厚度可為57μm至570μm。
Referring again to Figure 6, it is another specific implementation of the fluorine-based polymer high-frequency substrate of the present invention, which is also a double-sided copper-clad
第7圖顯示本發明氟系聚合物覆蓋膜700之具體實施態樣,除離型層705之外,其從上至下之結構依次為第一低介電膠層701、氟系聚合物層702、第二低介電膠層703以及聚醯亞胺層704,且該第一低介電膠層701的表面貼合有離型層705。本發明之氟系聚合物覆蓋膜700的總厚度可為40μm至350μm。
Figure 7 shows the specific implementation of the fluorine-based
第8圖顯示本發明氟系聚合物覆蓋膜800之另一具體實施態樣,除離型層807之外,其從上至下之結構依次為第一低介電膠層801、第一聚醯亞胺層802、第二低介電膠層803、氟系聚合物層804、第三低介電膠層805以及第二聚醯亞胺層806,且該第一低介電膠層801的表面貼合有離型層807。本發明之氟系聚合物覆蓋膜800的總厚度可為50μm至450μm。
Figure 8 shows another specific embodiment of the fluorine-based
第9圖係本發明氟系聚合物黏結片900之具體實施態樣的結構示意圖,除上方之離型層906之外,其從上至下之結構依次為第一低介電膠層901、氟系聚合物層902、第二低介電膠層903、聚醯亞胺層904以及第三低介電膠層905,且該第一低介電膠層901以及該第三低介電膠層905的表面分别貼合有離型層906。本發明之氟系聚合物黏結片900的總厚度可為45μm至400μm。
Figure 9 is a schematic structural diagram of a specific implementation aspect of the fluorine-based polymer
第10圖係本發明氟系聚合物黏結片1000之另一具體實施態樣的結構示意圖,除上方之離型層1008之外,其從上至下之結構依次為第一低介電膠層1001、第一聚醯亞胺層1002、第二低介電膠層1003、氟系聚合物層1004、第三低介電膠層1005、第二聚醯亞胺層1006以及第四低介電膠層1007,且該第一低介電膠層1001以及該第四低介電膠層1007的表面分别貼合有離型層1008。本發明之氟系聚合物黏結片1000的總厚度可為55μm至500μm。
Figure 10 is a schematic structural view of another specific embodiment of the fluorine-based polymer
於一具體實施態樣中,上述單面覆銅基板、FRCC、雙面覆銅基板、覆蓋膜以及黏結片中的該氟系聚合物層係介電常數(Dk)值為1.0至3.0(10 GHz)、介電損失因子(Df)值為0.0001至0.002(10GHz)且吸水率為0.001至0.1%之絕緣聚合物層。 In a specific embodiment, the dielectric constant (Dk) of the fluorine-based polymer layer in the single-sided copper-clad substrate, FRCC, double-sided copper-clad substrate, cover film, and bonding sheet is 1.0 to 3.0 (10 GHz), an insulating polymer layer with a dielectric loss factor (Df) value of 0.0001 to 0.002 (10 GHz) and a water absorption rate of 0.001 to 0.1%.
於一具體實施態樣中,上述單面覆銅基板、FRCC、雙面覆銅基板、覆蓋膜以及黏結片中的該銅箔層的厚度為1μm至35μm,該低介電膠層的厚度為5μm至50μm,該氟系聚合物層的厚度為25μm至200μm,該聚醯亞胺層的厚度為5μm至50μm。 In a specific embodiment, the thickness of the copper foil layer in the single-sided copper-clad substrate, FRCC, double-sided copper-clad substrate, cover film, and bonding sheet is 1 μm to 35 μm, and the thickness of the low dielectric adhesive layer is The thickness of the fluoropolymer layer is from 25 μm to 200 μm, and the thickness of the polyimide layer is from 5 μm to 50 μm.
於一具體實施態樣中,上述單面覆銅基板、FRCC、雙面覆銅基板、覆蓋膜以及黏結片中的該銅箔層係Rz值為0μm至1.2μm、Ra值為0μm至0.4μm之低輪廓銅箔層,且該銅箔層為壓延銅箔層或電解銅箔層。 In a specific embodiment, the copper foil layer in the single-sided copper-clad substrate, FRCC, double-sided copper-clad substrate, cover film, and bonding sheet has an Rz value of 0 μm to 1.2 μm, and a Ra value of 0 μm to 0.4 μm. The low profile copper foil layer, and the copper foil layer is a rolled copper foil layer or an electrolytic copper foil layer.
於一具體實施態樣中,上述單面覆銅基板、FRCC、雙面覆銅基板、覆蓋膜以及黏結片中的該低介電膠層係Dk值為2.0至3.5(10GHz)且Df值為0.001至0.010(10GHz)之膠層,而該聚醯亞胺層係Dk值為2.0至3.5(10GHz)且Df值為0.002至0.010(10GHz)之絕緣聚合物層。 In a specific implementation aspect, the low-dielectric adhesive layer in the single-sided copper-clad substrate, FRCC, double-sided copper-clad substrate, cover film, and bonding sheet has a Dk value of 2.0 to 3.5 (10 GHz) and a Df value of The adhesive layer is 0.001 to 0.010 (10 GHz), and the polyimide layer is an insulating polymer layer with a Dk value of 2.0 to 3.5 (10 GHz) and a Df value of 0.002 to 0.010 (10 GHz).
於一具體實施態樣中,上述單面覆銅基板、FRCC、雙面覆銅基板、覆蓋膜以及黏結片中的該氟系聚合物層包括氟系聚合物樹脂,該氟系聚合物樹脂係選自聚四氟乙烯、聚偏氟乙烯、氟乙烯與乙烯基醚共聚物、四氟乙烯與乙烯的共聚物、聚三氟氯乙烯與乙烯的共聚物、六氟丙烯與偏氟乙烯的共聚物、四氟乙烯-全氟烷基乙烯基醚共聚物、聚三氟氯乙烯、四氟乙烯-六氟丙稀共聚物、乙烯-氟乙烯共聚物以及四氟乙烯-六氟丙烯-三氟乙烯共聚物中的至少一種。 In a specific embodiment, the fluoropolymer layer in the single-sided copper-clad substrate, FRCC, double-sided copper-clad substrate, cover film, and bonding sheet includes a fluoropolymer resin, and the fluoropolymer resin Selected from polytetrafluoroethylene, polyvinylidene fluoride, copolymers of vinyl fluoride and vinyl ether, copolymers of tetrafluoroethylene and ethylene, copolymers of polychlorotrifluoroethylene and ethylene, copolymers of hexafluoropropylene and vinylidene fluoride Tetrafluoroethylene-perfluoroalkyl vinyl ether copolymer, polychlorotrifluoroethylene, tetrafluoroethylene-hexafluoropropylene copolymer, ethylene-fluoroethylene copolymer and tetrafluoroethylene-hexafluoropropylene-trifluoroethylene At least one of ethylene copolymers.
於一具體實施態樣中,上述單面覆銅基板、FRCC、雙面覆銅基板、覆蓋膜以及黏結片中的該低介電膠層包括樹脂,該樹脂係選自氟系樹脂、環氧樹脂、丙烯酸系樹脂、胺基甲酸酯系樹脂、矽橡膠系樹脂、聚對環二甲苯系樹脂、雙馬來醯亞胺系樹脂和聚醯亞胺系樹脂中的至少一種。 In a specific embodiment, the low-dielectric adhesive layer in the single-sided copper-clad substrate, FRCC, double-sided copper-clad substrate, cover film, and bonding sheet includes a resin, and the resin is selected from fluorine-based resins, epoxy resins, etc. At least one of resin, acrylic resin, urethane resin, silicone rubber resin, parylene resin, bismaleimide resin, and polyimide resin.
所述銅箔層即上述銅箔層及另一銅箔層;所述低介電膠層即上述第一低介電膠層、第二低介電膠層、第三低介電膠層及第四低介電膠層;所述聚醯亞胺層即上述聚醯亞胺層、第一聚醯亞胺層及第二聚醯亞胺層。 The copper foil layer is the copper foil layer and the other copper foil layer; the low-dielectric adhesive layer is the first low-dielectric adhesive layer, the second low-dielectric adhesive layer, the third low-dielectric adhesive layer, and The fourth low-dielectric adhesive layer; the polyimide layer is the above-mentioned polyimide layer, the first polyimide layer, and the second polyimide layer.
所述離型層可以是離型膜,其材料為聚丙烯、雙向拉伸聚丙烯以及聚對苯二甲酸乙二醇酯中的至少一種,且可以是具雙面離型能力的離型膜,又或是使用離型紙。 The release layer may be a release film, the material of which is at least one of polypropylene, biaxially oriented polypropylene and polyethylene terephthalate, and may be a release film with double-sided release capability , Or use release paper.
本發明之單面覆銅基板的製備方法,以第1圖所示之單面覆銅基板100為例,包括:
The preparation method of the single-sided copper-clad substrate of the present invention, taking the single-sided copper-clad
將該第一低介電膠層102塗布於該氟系聚合物層103的表面上,於60℃至180℃溫度範圍內去除溶劑,再將該第一低介電膠層102與該銅箔層101壓合,得到半成品A;
The first low-
將該第二低介電膠層104塗布於該聚醯亞胺層105的表面上,於60℃至180℃溫度範圍內去除溶劑,再將該第二低介電膠層104與該半成品A之氟系聚合物層103壓合,得到半成品B;
The second low dielectric
將該半成品B進行160℃至200℃、5小時以上之固化,得到成品氟系聚合物單面覆銅基板100。
The semi-finished product B is cured at 160°C to 200°C for more than 5 hours to obtain a finished fluorine-based polymer single-sided copper-clad
如第2圖所示之單面覆銅基板200的製備方法亦可如上述步驟進行,將各低介電膠層202,204,206分別塗佈於氟系聚合物層205或聚醯亞胺層203,207上,再與其他層或半成品壓合。
The preparation method of the single-sided copper-clad
本發明之FRCC的製備方法,以第3圖所示之FRCC 300為例,包括:
The preparation method of FRCC of the present invention, taking
將該第一低介電膠層302塗布於該氟系聚合物層303的表面上,於60℃至180℃溫度範圍內去除溶劑,再將該第一低介電膠層302與該銅箔層301壓合,得到半成品A;
The first low-
將該第二低介電膠層304塗布於該聚醯亞胺層305的表面上,於60℃至180℃溫度範圍內去除溶劑,再將該第二低介電膠層304與該半成品A之氟系聚合物層303壓合,得到半成品B;
The second low dielectric
將該半成品B進行160℃至200℃、5小時以上之固化,得到半成品C; The semi-finished product B is cured at 160°C to 200°C for more than 5 hours to obtain the semi-finished product C;
將該第三低介電膠層306塗布於該半成品C之聚醯亞胺層305的另一表面上,於60℃至180℃溫度範圍內去除溶劑,再將該第三低介電膠層306與該離型層307壓合,得到成品氟系聚合物FRCC 300。
The third low-
如第4圖所示之FRCC 400的製備方法亦可如上述步驟進行,將各低介電膠層402,404,406,408分別塗佈於氟系聚合物層405或聚醯亞胺層403,407上,再與其他層或半成品壓合。
As shown in Figure 4, the preparation method of
本發明之雙面覆銅基板的製備方法,以第5圖所示之雙面覆銅基板500為例,包括:
The preparation method of the double-sided copper-clad substrate of the present invention, taking the double-sided copper-clad
將該第一低介電膠層502塗布於該氟系聚合物層503的表面上,於60℃至180℃溫度範圍內去除溶劑,再將該第一低介電膠層502與該銅箔層501壓合,得到半成品A;
The first low dielectric
將該第三低介電膠層506塗布於該聚醯亞胺層505的表面上,於60℃至180℃溫度範圍內去除溶劑,再將該第三低介電膠層506與該另一銅箔層507壓合,得到半成品B;
The third low-
將該第二低介電膠層504塗布於該半成品A之氟系聚合物層503的另一表面上,於60℃至180℃溫度範圍內去除溶劑,再將該第二低介電膠層504與該半成品B之聚醯亞胺層505壓合,得到半成品C;
The second low-
將該半成品C進行160℃至200℃、5小時以上之固化,得到成品氟系聚合物雙面覆銅基板500。
The semi-finished product C is cured at 160°C to 200°C for more than 5 hours to obtain a finished fluoropolymer double-sided copper-clad
如第6圖所示之雙面覆銅基板600的製備方法亦可如上述步驟進行,將各低介電膠層602,604,606,608分別塗佈於氟系聚合物層605或聚醯亞胺層603,607上,再與其他層或半成品壓合。
The preparation method of the double-sided copper-clad
本發明之覆蓋膜的製備方法,以第7圖所示之覆蓋膜700為例,包括:
The method for preparing the cover film of the present invention, taking the
將該第二低介電膠層703塗布於該聚醯亞胺層704的表面上,於60℃至180℃溫度範圍內去除溶劑,再將該第二低介電膠層703與該氟系聚合物層702壓合;
The second low-
將該第一低介電膠層701塗布於該氟系聚合物層702的另一表面上,於60℃至180℃溫度範圍內去除溶劑,再將該第一低介電膠層701與該離型層705壓合,得到成品氟系聚合物覆蓋膜700。
The first low-
如第8圖所示之覆蓋膜800的製備方法亦可如上述步驟進行,將各低介電膠層801,803,805分別塗佈於氟系聚合物層804或聚醯亞胺層802,806上,再與其他層或半成品壓合。
The method for preparing the
本發明之黏結片的製備方法,以第9圖所示之黏結片900為例,包括:
The preparation method of the adhesive sheet of the present invention, taking the
將該第二低介電膠層903塗布於該聚醯亞胺層904的表面上,於60℃至180℃溫度範圍內去除溶劑,再將該第二低介電膠層903與該氟系聚合物層902壓合;
The second low-
將該第一低介電膠層901塗布於該氟系聚合物層902的另一表面上,於60℃至180℃溫度範圍內去除溶劑,再將該第一低介電膠層901與該離型層906壓合;
The first low-
將該第三低介電膠層905塗布於該聚醯亞胺層904的另一表面上,於60℃至180℃溫度範圍內去除溶劑,再將該第三低介電膠層905與該離型層906壓合,得到成品氟系聚合物黏結片900。
The third low-
如第10圖所示之黏結片1000的製備方法亦可如上述步驟進行,將各低介電膠層1001,1003,1005,1007分別塗佈於氟系聚合物層1004或聚醯亞胺層1002,1006上,再與其他層或半成品壓合。
The preparation method of the
實施例Example
實施例1至實施例7為本發明單面覆銅基板、FRCC和雙面覆銅基板之實施例,比較例1為不含氟系聚合物層的雙面覆銅基板,比較例2則為不含氟系聚合物層且含PEEK的雙面覆銅基板,而比較例3為僅有氟系聚合物層的雙面覆銅基板,各結構的具體數值見表1。 Examples 1 to 7 are examples of single-sided copper-clad substrates, FRCCs and double-sided copper-clad substrates of the present invention. Comparative Example 1 is a double-sided copper-clad substrate without a fluorine-based polymer layer, and Comparative Example 2 is A double-sided copper clad substrate containing no fluorine-based polymer layer and containing PEEK, while Comparative Example 3 is a double-sided copper clad substrate with only a fluorine-based polymer layer. The specific values of each structure are shown in Table 1.
其中,實施例1至實施例7中的氟系聚合物層係選用聖戈班PFA雙面處理薄膜(CHEMFILM),其係Dk值為1.98(10GHz)、Df值為0.0005(10GHz)、熱膨脹係數為293(ppm/℃)、吸水率為0.01%且表面經過易接著處理的絕緣聚合物層。低介電膠層之成分包含改質聚醯亞胺樹脂、環氧樹脂、填充粉體(燒結二氧化矽)以及阻燃劑(由亞洲電材公司所製)。 Among them, the fluorine-based polymer layer in Example 1 to Example 7 is a Saint-Gobain PFA double-sided treated film (CHEMFILM), which has a Dk value of 1.98 (10GHz), a Df value of 0.0005 (10GHz), and a thermal expansion coefficient of 293 (ppm/°C), an insulating polymer layer with a water absorption rate of 0.01% and an easy-to-adhesion treatment on the surface. The composition of the low-dielectric adhesive layer includes modified polyimide resin, epoxy resin, filler powder (sintered silica) and flame retardant (manufactured by Asia Electronics Corporation).
表1
對實施例1至實施例7以及比較例1至比較例3的Dk值、Df值、接著強度、熱膨脹係數和尺寸安定性進行測試,測試結果見表2。 The Dk value, Df value, adhesive strength, thermal expansion coefficient and dimensional stability of Example 1 to Example 7 and Comparative Example 1 to Comparative Example 3 were tested, and the test results are shown in Table 2.
表2
實施例8至實施例12為本發明覆蓋膜和黏結片之實施例,比較例4為PI覆蓋膜,比較例5則為PEEK覆蓋膜,各結構的具體數值見表3。 Examples 8 to 12 are examples of covering films and adhesive sheets of the present invention. Comparative Example 4 is a PI covering film, and Comparative Example 5 is a PEEK covering film. The specific values of each structure are shown in Table 3.
其中,實施例8至實施例12中的氟系聚合物層係Dk值為1.98(10GHz)、Df值為0.0005(10GHz)、熱膨脹係數為293(ppm/℃)、吸水率為0.01%且表面經過易接著處理的絕緣聚合物層。 Among them, the fluorine-based polymer layer system in Examples 8 to 12 has a Dk value of 1.98 (10GHz), a Df value of 0.0005 (10GHz), a thermal expansion coefficient of 293 (ppm/°C), a water absorption rate of 0.01%, and a surface Insulating polymer layer that is easy to bond.
表3
對實施例8至實施例12以及比較例4、比較例5的Dk值、Df值、接著強度和熱膨脹係數進行測試,測試結果見表4。 The Dk value, Df value, adhesive strength and thermal expansion coefficient of Example 8 to Example 12, Comparative Example 4 and Comparative Example 5 were tested. The test results are shown in Table 4.
表4
由表2和表4的測試結果可知,本發明的氟系聚合物高頻基板、覆蓋膜以及黏結片,相較於習知採用PI及PEEK的基板/覆蓋膜,具有極低Dk/Df,有利於高頻高速傳輸;而相較於PTFE基板,本發明的氟系聚合物高頻基板具良好的接著強度、低熱膨脹係數及高尺寸安定性。 From the test results in Table 2 and Table 4, it can be seen that the fluoropolymer high-frequency substrate, cover film and adhesive sheet of the present invention have extremely low Dk/Df compared to conventional substrates/cover films using PI and PEEK. Conducive to high-frequency and high-speed transmission; and compared with PTFE substrates, the fluorine-based polymer high-frequency substrate of the present invention has good bonding strength, low thermal expansion coefficient and high dimensional stability.
上述實施例係用以例示性說明本發明之原理及其功效,而非用於限制本發明。任何熟習此項技藝之人士均可在不違背本發明之精神及範疇下,對上述實施例進行修改。因此本發明之權利保護範圍,應如後述之申請專利範圍所列。 The above-mentioned embodiments are used to exemplify the principles and effects of the present invention, but not to limit the present invention. Anyone who is familiar with this technique can modify the above-mentioned embodiments without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the rights of the present invention should be listed in the scope of patent application described later.
應當理解地,在本發明所揭示之技術內容得能涵蓋之範圍內,各技術特徵(例如具體實施態樣及實施例所揭示者)可以自由地相互組合以形成新的或更佳的技術方案,為簡潔起見,在此不贅述。且本發明所揭示之由端值所構成之數值範圍中,只要數值落於上下兩端值之間,即應包含在本發明所揭示的範圍內,且其與端點或其他數值所形成之次範圍亦應理所當然地包含在本發明所揭示的範圍內。 It should be understood that, within the scope of the technical content disclosed in the present invention, various technical features (such as those disclosed in specific implementations and embodiments) can be freely combined with each other to form new or better technical solutions , For the sake of brevity, I won’t repeat it here. In addition, in the numerical range formed by the end values disclosed in the present invention, as long as the value falls between the upper and lower end values, it shall be included in the range disclosed in the present invention, and it should be combined with the end points or other values. The sub-range should naturally be included in the scope disclosed by the present invention.
500:雙面覆銅基板 500: Double-sided copper clad substrate
501:銅箔層 501: Copper foil layer
502:第一低介電膠層 502: The first low dielectric adhesive layer
503:氟系聚合物層 503: Fluorine-based polymer layer
504:第二低介電膠層 504: second low dielectric adhesive layer
505:聚醯亞胺層 505: Polyimide layer
506:第三低介電膠層 506: The third low dielectric adhesive layer
507:另一銅箔層 507: Another copper foil layer
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| TW (1) | TWI721859B (en) |
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| CN115209607A (en) * | 2021-04-14 | 2022-10-18 | 昆山雅森电子材料科技有限公司 | Composite high-frequency substrate and preparation method thereof |
| CN115891355A (en) * | 2022-10-20 | 2023-04-04 | 昆山雅森电子材料科技有限公司 | Fluorine-based composite film and reinforcing plate |
| CN116751392A (en) * | 2023-07-20 | 2023-09-15 | 昆山雅森电子材料科技有限公司 | High-temperature-resistant covering film and preparation method thereof |
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| TWI664086B (en) * | 2018-01-18 | 2019-07-01 | 亞洲電材股份有限公司 | Double-sided copper foil substrate with fluorine-based polymer and high frequency and high transmission property, preparation method and composite material |
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| CN103635015A (en) * | 2012-08-28 | 2014-03-12 | 昆山雅森电子材料科技有限公司 | High-frequency substrate structure and manufacturing method thereof |
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| KR102390263B1 (en) * | 2015-11-26 | 2022-04-22 | 셍기 테크놀로지 코. 엘티디. | Bonding sheet and flexible printed circuit board |
| JP2017197597A (en) * | 2016-04-25 | 2017-11-02 | 京セラ株式会社 | Adhesive composition, adhesive sheet, copper foil with adhesive layer, copper-clad laminate, and circuit board |
| CN207744230U (en) * | 2018-01-18 | 2018-08-17 | 昆山雅森电子材料科技有限公司 | Combined type fluorine system polymer high frequency high-transmission Double-sided copper clad laminate and FPC |
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| TW201831320A (en) * | 2017-02-17 | 2018-09-01 | 亞洲電材股份有限公司 | Pi-type double-sided copper clad laminate for high frequency high speed transmission and its preparation method |
| CN107160772A (en) * | 2017-05-10 | 2017-09-15 | 珠海亚泰电子科技有限公司 | High-frequency copper-clad plate manufacture craft |
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| TWI664086B (en) * | 2018-01-18 | 2019-07-01 | 亞洲電材股份有限公司 | Double-sided copper foil substrate with fluorine-based polymer and high frequency and high transmission property, preparation method and composite material |
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| TW202102362A (en) | 2021-01-16 |
| CN112261779A (en) | 2021-01-22 |
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