TWI703689B - Leadframe substrate having modulator and crack inhibiting structure and flip chip assembly using the same - Google Patents

Abstract

The leadframe substrate mainly includes a modulator, a plurality of metal leads, a resin layer and a crack inhibiting structure. The resin layer provides mechanical bonds between the modulator and the metal leads disposed about peripheral sidewalls of the modulator. The crack inhibiting structure includes a continuous interlocking fiber sheet that covers the modulator/resin interfaces, so that the segregation induced along the modulator/resin interfaces or cracks formed within the resin layer can be prevented or restrained from extending to the top surfaces, thereby ensuring the signal integrity of the flip chip assembly.

Description

Lead frame substrate with adjusting part and anti-cracking structure and flip chip assembly

The present invention relates to a lead frame substrate and a flip chip assembly thereof, in particular to a lead frame substrate and a flip chip assembly having an adjusting member and an anti-cracking structure on the adjusting member/resin interface.

High-performance microprocessors and ASICs require high-performance circuit boards to be interconnected by signals. However, as the power increases, the large amount of heat generated by the semiconductor chip will degrade the performance of the device and cause thermal stress on the chip. U.S. Patent No. 8,859,908 of Wang et al., U.S. Patent No. 8,415,780 of Sun, U.S. Patent No. 9,185,791 of Wang et al., and U.S. Patent No. 9,706,639 of Lee disclose various package substrates, which dispose heat dissipation elements on a resin laminate. Through the opening, so that the heat generated by the semiconductor chip can be directly dissipated through the heat dissipation element below. As shown in FIG. 1, the heat dissipation element 12 is joined to the surrounding resin laminate 14, which is usually joined to each other via an adhesive 17 between the two. However, due to the significant coefficient of thermal expansion (CTE) mismatch between the heat dissipation element 12 and the resin laminate 14, the contact area between the heat dissipation element 12 and the resin laminate 14 is prone to cracks. In this case, the routing circuit 19 must be set In the resin laminate part of the substrate, the semiconductor chip placed on the heat sink can only be connected to the resin laminate through bonding wires. The bonding wires electrically connect the semiconductor chip I/O pads (not shown) to the routing circuit on the resin laminate, and are separated from the interface cracked area to avoid electrical disconnection. Therefore, these substrates are not suitable for flip-chip assemblies, where the routing circuits in the flip-chip assemblies must be provided on the heat dissipation element and extend beyond the interface boundary to the resin laminate.

In view of the recent development stages and limitations of substrates, there is an urgent need to fundamentally improve the thermal-mechanical properties of substrates used in flip-chip assemblies.

The main purpose of the present invention is to provide a lead frame substrate provided with a high thermal conductivity and low coefficient of thermal expansion (CTE) adjusting member. The adjusting member can not only provide an effective heat dissipation path for the chip assembled on it, but also can reduce the defects of solder ball cracking caused by the CTE mismatch between the flip chip and the substrate, thereby ensuring the reliability of the flip chip.

Another object of the present invention is to provide a lead frame substrate whose anti-cracking structure covers the adjustment member/resin interface and extends laterally to the adjustment member and the resin layer. The anti-cracking structure includes continuous interlaced fiber sheets, so it can avoid or prevent the peeling caused by the adjustment member/resin interface or the cracks formed in the resin layer from extending into the top surface of the structure. Therefore, the signal integrity of the routing lines of the substrate and the flip chip assembly can be ensured.

According to the above and other objectives, the present invention provides a lead frame substrate, which includes: a plurality of metal leads having top and bottom ends; and an adjustment member having flat and parallel top and bottom sides, and a top on the top side The contact pad and the bottom contact pad located on the bottom side, the adjusting member is arranged in a designated position surrounded by the metal leads, wherein the thermal conductivity of the adjusting member is greater than 10W/mk, and the thermal expansion coefficient is less than 10ppm/°C; A resin layer filled in the space between the metal leads and attached to the peripheral side wall of the adjusting member; and a first anti-cracking structure including a first continuous interlaced fiber sheet, the first continuous interlacing The fiber sheet covers the interface between the adjustment member and the resin layer, and further extends laterally on the top side of the adjustment member, the top ends of the metal leads, and the top surface of the resin layer, and covers the adjustment member The top side, the top ends of the metal leads, and the top surface of the resin layer.

In another aspect, the present invention further provides a flip chip assembly, which includes: the lead frame substrate described above; and a semiconductor chip, which is electrically connected to the lead frame substrate through a plurality of bumps, and the bumps are provided with In the space between the semiconductor chip and the lead frame substrate, at least one of the bumps overlaps the adjustment member and is electrically connected to the metals through a first routing line on the first anti-crack structure lead.

The lead frame substrate of the present invention has many advantages. For example, it is particularly advantageous to provide a low-CTE adjuster in the resin layer, because the CTE of the adjuster can match the CTE of the semiconductor wafer. Therefore, it is possible to avoid the problem of interconnect bump cracking related to the mismatch of wafer/substrate CTE. In addition, providing a crack-proof structure containing continuous interlaced fiber sheets can play a protective role to avoid peeling along the adjustment member/resin interface (related to the CTE mismatch between the adjustment member and the resin), and the fiber sheet can further prevent the formation of Any cracks in the resin layer extend to the surface of the substrate and damage the top routing line.

The above and other features and advantages of the present invention can be more clearly understood by the detailed description of the following preferred embodiments.

100, 120, 130, 200, 220, 230, 300, 400, 410, 420, 500, 600, 700‧‧‧Interconnect substrate

110, 210, 310, 510, 610‧‧‧ Semiconductor assembly

10‧‧‧Wire frame

11、15‧‧‧Metal frame

13‧‧‧Metal Lead

131‧‧‧External

133‧‧‧Inner end

136‧‧‧Horizontal extension

137‧‧‧Vertical protrusion

16‧‧‧Connecting rod

20‧‧‧Adjustment piece

21‧‧‧Heat conduction and electrical insulation block

23‧‧‧Top contact pad

25‧‧‧Bottom contact pad

27‧‧‧Metal through hole

30‧‧‧Resin layer

41、47‧‧‧First bonding resin

42、52‧‧‧Internal routing line

424、464、484‧‧‧Blind metal hole on top

43‧‧‧First circuit layer

45‧‧‧The first anti-cracking structure

451‧‧‧The first continuous interlaced fiber sheet

453‧‧‧First joint base

454‧‧‧Blind hole

46‧‧‧First Route

48、58‧‧‧External routing line

51‧‧‧Second bonding resin

53‧‧‧Second circuit layer

55‧‧‧Second anti-cracking structure

551‧‧‧Second continuous interlaced fiber sheet

553‧‧‧Second Joint Base

56‧‧‧Second routing line

524、564、584‧‧‧Blind metal holes at the bottom

57‧‧‧Second bonding resin

61‧‧‧Semiconductor chip

71‧‧‧ bump

81‧‧‧ Primer

91‧‧‧Solder Ball

With reference to the accompanying drawings, the present invention can be more clearly understood by the detailed description of the following preferred embodiments, in which: Figure 1 is a cross-sectional view of the conventional wire bonding assembly; Figures 2 and 3 are respectively the first embodiment of the present invention , The cross-sectional view and top perspective schematic view of the lead frame; Figures 4 and 5 are respectively the cross-sectional view and top perspective schematic view of the adjusting member provided in the structure of Figures 2 and 3 in the first embodiment of the present invention; Figures 6 and 7 are respectively the first embodiment of the present invention In the embodiment, the cross-sectional view and top perspective view of the resin layer formed on the structure of FIGS. 4 and 5; FIG. 8 is a cross-sectional view of the first anti-cracking structure formed on the structure of FIG. 6 in the first embodiment of the present invention; In one embodiment, FIG. 8 is a cross-sectional view of a blind hole formed on the structure; FIGS. 10 and 11 are respectively a cross-sectional view and a top perspective view of a first routing line formed on the structure of FIG. 9 to complete the production of the lead frame substrate in the first embodiment of the present invention 12 is a cross-sectional view of the semiconductor assembly of the semiconductor chip electrically connected to the lead frame substrate of FIG. 10 in the first embodiment of the present invention; FIG. 13 is the first embodiment of the present invention, the primer is formed in the semiconductor assembly of FIG. 12 14 is a cross-sectional view of the solder balls formed in the semiconductor assembly of FIG. 13 in the first embodiment of the present invention; FIG. 15 is a cross-sectional view of the lead frame substrate in another aspect of the first embodiment of the present invention; FIG. Figure 17 is a cross-sectional view of the lead frame substrate in the second embodiment of the present invention; Figure 18 is a cross-sectional view of the lead frame substrate in the second embodiment of the present invention; 17 is a cross-sectional view of the semiconductor assembly connected to the lead frame substrate in FIG. 17; FIG. 19 is a cross-sectional view of the lead frame substrate in another aspect in the second embodiment of the present invention; FIG. 20 is another aspect in the second embodiment of the present invention Fig. 21 is a cross-sectional view of the lead frame substrate in the third embodiment of the present invention; Fig. 22 is a cross-sectional view of the semiconductor assembly in which the semiconductor chip is electrically connected to the lead frame substrate of Fig. 21 in the third embodiment of the present invention Figure 23 is a cross-sectional view of the lead frame substrate in the fourth embodiment of the present invention; Figure 24 is a cross-sectional view of the lead frame substrate in another aspect of the fourth embodiment of the present invention; Figure 25 is the fourth embodiment of the present invention, A cross-sectional view of a lead frame substrate of another aspect; FIGS. 26 and 27 are respectively a cross-sectional view and a top perspective view of a lead frame, an adjusting member, a resin layer, and a first circuit layer in the fifth embodiment of the present invention; FIG. 28 is the present invention In the fifth embodiment, the first anti-crack structure and the first routing line are formed on the structure of FIG. 26 to complete the production of the lead frame substrate; FIG. 29 is the fifth embodiment of the present invention, the semiconductor chip is electrically connected to the wires of FIG. 28 A cross-sectional view of the semiconductor assembly of the rack substrate; FIG. 30 is a cross-sectional view of the structure of FIG. 29 after the cutting step in the fifth embodiment of the present invention; FIG. 31 is the sixth embodiment of the present invention, with a lead frame, an adjusting member and a resin layer 32 is a cross-sectional view of the first circuit layer and the second circuit layer formed on the structure of FIG. 31 in the sixth embodiment of the present invention; FIG. 33 is the sixth embodiment of the present invention, and the first protective layer is formed on the structure of FIG. 32 Crack structure, first routing line, second anti-cracking structure and second route Fig. 34 is a cross-sectional view of the semiconductor assembly in which the semiconductor chip is electrically connected to the lead frame substrate of Fig. 33 in the sixth embodiment of the present invention; Fig. 35 is the seventh embodiment of the present invention, A cross-sectional view of the lead frame; FIG. 36 is a cross-sectional view taken along line AA of FIG. 35 in the seventh embodiment of the present invention; FIG. 37 is a top plan view of the adjustment member provided in the structure of FIG. 35 in the seventh embodiment of the present invention; In the seventh embodiment of the present invention, a cross-sectional view taken along line AA in FIG. 37; FIGS. 39 and 40 are respectively top and bottom plan views of the resin layer formed on the structure of FIG. 38 in the seventh embodiment of the present invention; FIG. 41 is the seventh embodiment of the present invention In an example, a cross-sectional view taken along line AA of FIG. 39; FIG. 42 is a cross-sectional view of the first anti-cracking structure and the first routing line formed on the structure of FIG. 41 in the seventh embodiment of the present invention; and FIG. 43 is the seventh embodiment of the present invention In the bottom plan view of the lead frame substrate cut out from the structure of FIG. 42.

Hereinafter, an example will be provided to illustrate the implementation aspects of the present invention in detail. The advantages and effects of the present invention will be more obvious through the content disclosed by the present invention. The drawings attached to this description are simplified and used as examples. The number, shape, and size of the components shown in the drawings can be modified according to actual conditions, and the configuration of the components may be more complicated. The present invention can also be practiced or applied in other aspects, and various changes and adjustments can be made without departing from the spirit and scope defined by the present invention.

[Example 1]

Figures 2-11 are diagrams of a manufacturing method of an uncut lead frame substrate in the first embodiment of the present invention. The lead frame substrate includes a metal frame, a plurality of metal leads, an adjusting member, a resin layer, and a first protective film. Split structure and a first routing line.

2 and 3 are a cross-sectional view and a top perspective view of the lead frame 10, respectively. The lead frame 10 is usually made of copper alloy, steel, or alloy 42, which can be formed by wet etching or stamping/punching a rolled metal strip. Here, the etching process can be performed on one side or both sides to etch through the metal strips to make the metal strips into the lead frame 10 with a predetermined overall pattern. In this embodiment, the lead frame 10 has a uniform thickness ranging from about 0.15 mm to about 1.0 mm, and includes a metal frame 11 and a plurality of metal leads 13. The metal frame 11 has a flat top surface/bottom surface and a through hole 101, and is surrounded by the metal lead 13 and keeps a distance from the metal lead 13.

4 and 5 are respectively a cross-sectional view and a top perspective schematic view of the adjusting member 20 arranged at a designated position in the central area of the metal frame 11, wherein the adjusting member 20 is kept at a distance from the inner side wall of the metal frame 11. At this stage, the metal frame 11 can be used as a positioning member of the adjusting member 20. In this figure, the adjusting member 20 includes a thermally conductive and electrically insulating block 21, a top contact pad 23 on the top side, and a bottom contact pad 25 on the bottom side. The adjustment member 20 generally has a thermal conductivity greater than 10W / mk, the higher the elastic modulus of 200Gpa, below and / ℃ thermal expansion coefficient of 10 ppm (eg 2 x 10 ^-6 K ^-1 to 10 x 10 ^-6 K ^{- 1} ).

6 and 7 are respectively a cross-sectional view and a top perspective view of the resin layer 30 formed. The resin layer 30 can be deposited in the remaining space in the metal frame 11 and the space between the metal leads 13. At this stage, the metal frame 11 can prevent the adjustment member 20 from being misaligned when the resin layer is disposed. The elastic modulus of the resin layer 30 is generally lower than the elastic modulus of the adjusting member 20, or/and the thermal expansion coefficient of the resin layer 30 is higher than the thermal expansion coefficient of the adjusting member 20. Therefore, the resin layer 30 laterally covers, surrounds and coats the metal lead 13 and the adjusting member 20 in the lateral direction, and provides a stable mechanical bonding force between the lead frame 10 and the adjusting member 20. Through the planarization process, the top surface of the resin layer 30 is substantially coplanar with the top side of the lead frame 10 and the outer surface of the top contact pad 23, and the bottom surface of the resin layer 30 is substantially coplanar with the bottom side and bottom contact pad 23 of the lead frame 10 The outer surface is substantially coplanar.

8 is a cross-sectional view of the first anti-crack structure 45 formed on the adjusting member 20, the resin layer 30 and the lead frame 10 from above. The first anti-cracking structure 45 covers the top surface of the metal frame 11, the top end of the metal lead 13, the top side of the adjusting member 20 and the top surface of the resin layer 30 to provide protection from above. In this embodiment, the first anti-crack structure 45 includes a first continuous interlaced fiber sheet 451, which covers the interface between the adjusting member 20 and the resin layer 30 from above, and further extends laterally on the top surface of the metal frame 11 , The top side of the adjustment member 20, the top side of the metal lead 13 and the top surface of the resin layer 30, and cover the top surface of the metal frame 11, the top side of the adjustment member 20, the top side of the metal lead 13 and the top surface of the resin layer 30 . The continuous interlaced fiber can be carbon fiber, silicon carbide fiber, glass fiber, nylon fiber, polyester fiber or polyamide fiber. Accordingly, even if cracks are generated in the resin layer 30 or at the interface between the adjusting member 20 and the resin layer 30 during thermal cycling, the fiber interlaced structure formed in the first crack prevention structure 45 can prevent the cracks from extending into the first crack prevention structure 45. In this figure, the first anti-cracking structure 45 further includes a first bonding base 453, and the first continuous interlaced fiber sheet 451 is blended in the first bonding base 453.

9 is a cross-sectional view of a blind hole 454 formed, which exposes the top of the metal lead 13 and the outer surface of the top contact pad 23 from above, and optionally exposes the top surface of the metal frame 11. The blind hole 454 can be formed by various techniques, including laser drilling, plasma etching, and lithography, and it usually has a diameter of 50 microns. Pulse laser can be used to improve the efficiency of laser drilling. Alternatively, a scanning laser beam can be used with a metal mask. The blind hole 454 extends through the first anti-crack structure 45 and is aligned with the selected location of the metal frame 11, the selected location of the metal lead 13, and the selected location of the top contact pad 23.

10 and 11 are respectively a cross-sectional view and a top perspective schematic view of forming the first routing line 46 on the first anti-crack structure 45 by metal deposition and metal patterning processes. The first routing line 46 is usually made of copper, and extends upward from the top contact pad 23 of the metal frame 11, the metal lead 13 and the adjusting member 20, and fills the blind hole 454 to form a direct contact with the metal frame 11 and the metal lead 13. And the top metal blind hole 464 of the top contact pad 23, while extending laterally on the first anti-crack structure 45. Therefore, the first routing line 46 is attached to the first bonding base layer 453, and is thermally conducted to the metal frame 11 and the top contact pad 23 of the adjusting member 20 through the top metal blind hole 464 penetrating through the first anti-crack structure 45, and Electrically connected to the metal lead 13.

In this stage, the completed uncut lead frame substrate 100 includes the metal frame 11, the metal leads 13, the adjustment member 20, the resin layer 30, the first anti-cracking structure 45 and the first routing wire 46. The metal frame 11 laterally surrounds the adjusting member 20, and can be used as a positioning member of the adjusting member 20, and provides a heat dissipation path. The metal leads 13 laterally surround the metal frame 11 and serve as vertical connection channels. The adjusting member 20 can be used as a heat sink for the substrate and can help maintain the flatness of the substrate when it is under external or internal tension/stress, thereby ensuring the reliability of the flip chip assembly. The resin layer 30 fills the space between the metal leads 13 and the space between the metal frame 11 and the adjusting member 20, and provides a mechanical bonding force between the lead frame 10 and the adjusting member 20. The first anti-crack structure 45 can be used to prevent peeling along the regulating member/resin interface, and can also be used as a crack stopper to prevent undesirable cracks formed in the resin layer 30 from extending to the first routing line 46, so as to ensure The signal integrity of the flip chip assembly. The first routing line 46 provides horizontal routing in the X and Y directions, and is separated from the adjusting member/resin interface by the first anti-cracking structure 45.

12 is a cross-sectional view of the semiconductor assembly 110, which electrically connects the semiconductor chip 61 to the lead frame substrate 100 shown in FIG. The semiconductor chip 61 (shown as a bare chip) is placed face down on the first routing line 46 by bumps 71. Therefore, the heat generated by the semiconductor chip 61 can be conducted out through the first routing wire 46, the adjusting member 20 and the metal frame 11. In addition, the low CTE of the adjustment member 20 can reduce the CTE mismatch between the semiconductor chip 61 and the bump contact area (covered by the adjustment member 20 from below), and can prevent the bump contact area from warping during thermal cycling Therefore, the bump 71 that is aligned with the adjusting member 20 and the adjusted member 20 is completely covered from below can be prevented from cracking, thereby avoiding the problem of connection failure between the semiconductor chip 61 and the lead frame substrate 100.

13 is a cross-sectional view of a primer 81 further formed in the semiconductor assembly 110 shown in FIG. 12. Optionally, a primer 81 is further provided to fill the gap between the semiconductor chip 61 and the lead frame substrate 100.

FIG. 14 is a cross-sectional view of the solder balls 91 formed in the semiconductor assembly 110 shown in FIG. 13. Optionally, a solder ball 91 is further connected to the bottom surface of the metal frame 11, the bottom end of the metal lead 13 and the bottom contact pad 25 of the adjustment member 20 for the next level of connection.

15 is a cross-sectional view of a lead frame substrate in another aspect in the first embodiment of the present invention. The lead frame substrate 120 is substantially the same as that shown in FIG. 10, except that the lead frame substrate 120 further includes a first bonding resin 47 and an external routing wire 48 alternately formed from above. The first bonding resin 47 covers the first anti-crack structure 45 and the first routing line 46 from above. The outer routing line 48 extends laterally on the first bonding resin 47 and contacts the first routing line 46 through the top metal blind hole 484 in the first bonding resin 47. Therefore, the external routing wire 48 is thermally conducted to the adjusting member 20 and the metal frame 11 through the first routing wire 46, and is electrically connected to the metal lead 13.

FIG. 16 is a cross-sectional view of a lead frame substrate in another aspect in the first embodiment of the present invention. The lead frame substrate 130 is substantially the same as that shown in FIG. 10, except that the lead frame substrate 130 further includes alternately formed and located between the first anti-crack structure 45/first routing line 46 and the adjusting member 20/resin layer 30 A first bonding resin 41 and an internal routing wire 42. The first bonding resin 41 covers and contacts the top surface of the metal frame 11, the top side of the adjusting member 20, the top end of the metal lead 13, and the top surface of the resin layer 30. The internal routing line 42 extends laterally on the first bonding resin 41 and includes a top metal blind hole 424 that contacts the top contact pad 23, the metal lead 13 and the metal frame 11. The first anti-cracking structure 45 covers the first bonding resin 41 and the internal routing wire 42 from above, and is separated from the adjusting member 20 and the resin layer 30 by the first bonding resin 41 and the internal routing wire 42. The first routing line 46 extends laterally on the first anti-cracking structure 45, and is thermally connected to the top contact pad 23 of the adjusting member 20 and the metal frame 11 through the top metal blind hole 464 contacting the internal routing line 42, and It is electrically coupled to the metal lead 13.

[Example 2]

FIG. 17 is a cross-sectional view of the lead frame substrate of the second embodiment of the present invention.

For the purpose of brief description, any description that can be used for the same application in the above embodiment 1 is incorporated herein, and the same description is not required to be repeated.

The lead frame substrate 200 is substantially the same as that shown in FIG. 10, except that it further includes a second anti-cracking structure 55 and a second routing line 56 alternately formed from below. The second anti-cracking structure 55 covers the bottom surface of the metal frame 11, the bottom end of the metal lead 13, the bottom side of the adjusting member 20, and the bottom surface of the resin layer 30 to provide protection from below. The second routing line 56 extends laterally on the second anti-crack structure 55, and through the bottom metal blind hole 564, is thermally conducted to the bottom contact pad 25 of the adjusting member 20 and the metal frame 11, and is electrically connected to the metal lead 13 . Like the first anti-cracking structure 45, the second anti-cracking structure 55 may include a second continuous interlaced fiber sheet 551, which covers the interface between the adjusting member 20 and the resin layer 30 from below, and further extends laterally on the metal frame 11 The bottom surface, the bottom side of the adjustment member 20, the bottom end of the metal lead 13 and the bottom surface of the resin layer 30, and cover the bottom surface of the metal frame 11, the bottom side of the adjustment member 20, the bottom end of the metal lead 13 and the resin layer 30 Underside. Accordingly, the staggered structure formed in the second anti-cracking structure 55 can prevent cracks in the resin layer 30 from extending into the second anti-cracking structure 55 to ensure the reliability of the second routing line 56 on the second anti-cracking structure 55 . Through the double protection of the first anti-crack structure 45 and the second anti-crack structure 55, it is possible to avoid or prevent peeling caused by the cracks formed along the adjusting member/resin interface or in the resin layer 30. In this figure, the second anti-crack structure 55 further includes a second bonding base layer 553, and the second continuous interlaced fiber sheet 551 is blended in the second bonding base layer 553.

At this stage, the completed uncut lead frame substrate 200 includes the metal frame 11, the metal lead 13, the adjustment member 20, the resin layer 30, the first anti-cracking structure 45, the first routing line 46, and the second anti-cracking structure 55 and second routing line 56. The first anti-cracking structure 45 and the second anti-cracking structure 55 can provide protection to ensure the reliability of the first routing line 46 and the second routing line 56. The first routing line 46 is thermally connected to the second routing line 56 through the adjusting member 20 and the metal frame 11 for heat dissipation, and is electrically connected to the second routing line 56 through the metal lead 13 for signal transmission.

18 is a cross-sectional view of the semiconductor assembly 210, which electrically connects the semiconductor chip 61 to the lead frame substrate 200 shown in FIG. The semiconductor chip 61 is placed face down on the first routing line 46 by the bumps 71. In this embodiment, the heat generated by the semiconductor chip 61 can be conducted through the first routing wire 46, the adjusting member 20, the metal frame 11, and the second routing wire 56.

19 is a cross-sectional view of a lead frame substrate in another aspect in the second embodiment of the present invention. The lead frame substrate 220 is substantially the same as that shown in FIG. 17, except that it further includes a second bonding resin 57 and an external routing wire 58 alternately formed from below. The second bonding resin 57 covers the second anti-crack structure 55 and the second routing line 56 from below. The outer routing line 58 extends laterally on the second bonding resin 57 and includes a bottom metal blind hole 584 contacting the second routing line 56. Therefore, the first routing line 46 is thermally conducted to the external routing line 58 through the metal frame 11, the adjusting member 20 and the second routing line 56, and is electrically connected to the external routing line 58 through the metal lead 13 and the second routing line 56 .

20 is a cross-sectional view of a lead frame substrate in another aspect in the second embodiment of the present invention. The lead frame substrate 230 is roughly the same as that shown in FIG. 17, except that it further includes a second one formed alternately and located between the second anti-crack structure 55/the second routing line 56 and the adjusting member 20/the resin layer 30 Bond resin 51 and an internal routing wire 52. The second bonding resin 51 covers and contacts the bottom surface of the metal frame 11, the bottom side of the adjusting member 20, the bottom end of the metal lead 13, and the bottom surface of the resin layer 30. The internal routing line 52 extends laterally on the second bonding resin 51 and includes a bottom metal blind hole 524 that contacts the metal frame 11, the metal lead 13 and the bottom contact pad 23 of the adjusting member 20. The second anti-cracking structure 55 covers the second bonding resin 51 and the internal routing wire 52 from below, and is separated from the adjusting member 20 and the resin layer 30 by the second bonding resin 51 and the internal routing wire 52. The second routing wire 56 extends laterally on the second anti-crack structure 55, and is thermally conducted to the bottom contact pad 25 of the adjusting member 20 and the metal frame 11 through the bottom metal blind hole 564 contacting the internal routing wire 52, and It is electrically coupled to the metal lead 13.

[Example 3]

21 is a cross-sectional view of the lead frame substrate of the third embodiment of the present invention.

For the purpose of brief description, any description that can be used for the same application in the above-mentioned embodiments is incorporated herein, and the same description does not need to be repeated.

The lead frame substrate 300 is substantially the same as that shown in FIG. 10, except that the adjusting member 20 further has a metal through hole 27 for contacting the top contact pad 23 and the bottom contact pad 25. The metal through holes 27 extend through the thermally conductive and electrically insulating block 21 to provide an electrical connection between the top contact pad 23 and the bottom contact pad 25 for grounding/power connection.

FIG. 22 is a cross-sectional view of the semiconductor assembly 310, which electrically connects the semiconductor chip 61 to the lead frame substrate 300 shown in FIG. 21. The semiconductor chip 61 is placed face down on the first routing line 46 by the bumps 71. Therefore, the semiconductor chip 61 is electrically connected to the metal lead 13 through the first routing line 46 for signal transmission, and is electrically connected to the regulator 20 to form a ground/power connection.

[Example 4]

FIG. 23 is a cross-sectional view of the lead frame substrate of the fourth embodiment of the present invention.

For the purpose of brief description, any description that can be used for the same application in the above-mentioned embodiments is incorporated herein, and the same description does not need to be repeated.

The lead frame substrate 400 is substantially the same as that shown in FIG. 21, except that it further includes a second anti-cracking structure 55 and a second routing line 56 alternately formed from below. The second anti-cracking structure 55 covers the bottom surface of the metal frame 11, the bottom end of the metal lead 13, the bottom side of the adjusting member 20 and the bottom surface of the resin layer 30. The second routing line 56 extends laterally on the second anti-crack structure 55 and includes a bottom metal blind hole 564 that contacts the metal frame 11, the metal lead 13 and the bottom contact pad 25. Therefore, the second routing wire 56 is thermally conductive and electrically coupled to the bottom contact pad 25 of the adjusting member 20 and the metal frame 11 for heat dissipation and grounding/power connection, and is electrically connected to the metal lead 13 for Signal transmission.

24 is a cross-sectional view of a lead frame substrate in another aspect in the fourth embodiment of the present invention. The lead frame substrate 410 is substantially the same as that shown in FIG. 23, except that it further includes a first bonding resin 47 located between the first anti-cracking structure 45 and the first routing line 46, and a second anti-cracking structure 55 A second bonding resin 57 with the second routing wire 56. The first routing line 46 extends laterally on the first bonding resin 47, and is electrically coupled to the metal frame 11 and the adjusting member by passing through the first anti-crack structure 45 and the top metal blind hole 464 of the first bonding resin 47 The top of 20 contacts the pad 23 and the top of the metal lead 13. The second routing wire 56 extends laterally on the second bonding resin 57, and is electrically coupled to the metal frame 11 and the adjusting member by penetrating the second anti-crack structure 55 and the bottom metal blind hole 564 of the second bonding resin 57 The bottom of 20 contacts the pad 25 and the bottom of the metal lead 13.

FIG. 25 is a cross-sectional view of a lead frame substrate in another aspect in the fourth embodiment of the present invention. The lead frame substrate 420 is substantially the same as that shown in FIG. 23, except that the first anti-cracking structure 45 and the second anti-cracking structure 55 are combined with the adjusting member 20 through the first bonding resin 41 and the second bonding resin 51. It is separated from the resin layer 30. The first routing line 46 extends laterally on the first anti-crack structure 45, and is electrically coupled to the metal frame 11 and the adjusting member through the top metal blind hole 464 that penetrates the first bonding resin 41 and the first anti-crack structure 45 The top of 20 contacts the pad 23 and the top of the metal lead 13. The second routing line 56 extends laterally on the second anti-crack structure 55, and is electrically coupled to the metal frame 11 and the adjusting member through the bottom metal blind hole 564 that penetrates the second bonding resin 51 and the second anti-crack structure 55 The bottom of 20 contacts the pad 25 and the bottom of the metal lead 13.

[Example 5]

26-28 are diagrams of a manufacturing method of a lead frame substrate according to a fifth embodiment of the present invention, which has a first circuit layer.

26 and 27 are respectively a cross-sectional view and a top perspective schematic view of the metal frame 11, the plurality of metal leads 13, the adjusting member 20, the resin layer 30, and the first circuit layer 43. The adjusting member 20 includes a top contact pad 23 and a bottom contact pad 25 on both sides thereof. The metal leads 13 are located in the metal frame 11, keep a distance from the metal frame 11, and surround the adjusting member 20 laterally to serve as a vertical connection channel. The resin layer 30 is bonded to the peripheral sidewalls of the metal lead 13 and the adjusting member 20 to provide a mechanical bonding force between the metal lead 13 and the adjusting member 20. The first circuit layer 43 is usually made of copper, extends laterally on the top surface of the resin layer 30 and is electrically coupled to the metal lead 13 and thermally connected to the top contact pad 23 of the adjusting member 20.

28 is a cross-sectional view of alternately forming the first anti-crack structure 45 and the first routing line 46 from above. The first anti-crack structure 45 covers the adjusting member 20, the resin layer 30 and the first circuit layer 43 from above. The first routing line 46 extends laterally on the first anti-crack structure 45 and is electrically connected to the metal lead 13 and thermally connected to the adjusting member 20 through the top metal blind hole 464 of the first circuit layer 43.

According to this, the completed uncut lead frame substrate 500 includes the metal frame 11, the metal lead 13, the adjustment member 20, the resin layer 30, the first circuit layer 43, the first anti-cracking structure 45 and the first routing wire 46.

FIG. 29 is a cross-sectional view of the semiconductor assembly 510, which electrically connects the semiconductor chip 61 to the lead frame substrate 500 shown in FIG. 28. The semiconductor chip 61 is flip-chip connected to the first routing line 46 by the bumps 71, and is electrically connected to the metal lead 13 through the first routing line 46 and the first circuit layer 43.

FIG. 30 is a cross-sectional view of the semiconductor assembly 510 of FIG. 29 with the metal frame 11 and selected parts of the first anti-cracking structure 45 removed. The removal step can be performed by various methods, including chemical etching, mechanical cutting/cutting, or sawing to separate the metal frame 11 from the outer edge of the resin layer 30.

[Example 6]

31-33 are diagrams of a manufacturing method of a lead frame substrate according to a sixth embodiment of the present invention, which has a first circuit layer and a second circuit layer.

FIG. 31 is a cross-sectional view of the adjustment member 20 being joined to the lead frame 10 through the resin layer 30. The adjusting member 20 is located in the metal frame 11 of the lead frame 10 and is laterally surrounded by the metal leads 13 of the lead frame 10. The resin layer 30 is filled between the metal leads 13 and attached to the peripheral sidewall of the adjusting member 20. In this embodiment, the adjusting member 20 includes a top contact pad 23 and a bottom contact pad 25 at two sides thereof, and they are electrically connected to each other through the metal through hole 27.

32 is a cross-sectional view of forming the first circuit layer 43 and the second circuit layer 53 on the top and bottom surfaces of the resin layer 30, respectively. The first circuit layer 43 extends laterally on the top surface of the resin layer 30 and is electrically coupled to the metal lead 13 and the top contact pad 23 of the adjusting member 20. The second circuit layer 53 extends laterally on the bottom surface of the resin layer 30 and is electrically coupled to the metal lead 13 and the bottom contact pad 25 of the adjusting member 20.

33 is a cross-sectional view of alternately forming the first anti-cracking structure 45 and the first routing line 46 from above, and alternately forming the second anti-cracking structure 55 and the second routing line 56 from below. The first anti-crack structure 45 covers the adjusting member 20, the resin layer 30 and the first circuit layer 43 from above. The second anti-crack structure 55 covers the adjusting member 20, the resin layer 30 and the second circuit layer 53 from below. The first routing line 46 extends laterally on the first anti-crack structure 45 and is electrically connected to the metal lead 13 and the adjusting member 20 through the top metal blind hole 464 of the first circuit layer 43. The second routing line 56 extends laterally on the second anti-crack structure 55 and is electrically connected to the metal lead 13 and the adjustment member 20 through the bottom metal blind hole 564 of the second circuit layer 53.

Accordingly, the completed uncut lead frame substrate 600 includes the metal frame 11, the metal lead 13, the adjustment member 20, the resin layer 30, the first circuit layer 43, the first anti-cracking structure 45, the first routing line 46, and the The second circuit layer 53, the second anti-cracking structure 55 and the second routing line 56.

FIG. 34 is a cross-sectional view of the semiconductor assembly 610, which electrically connects the semiconductor chip 61 to the lead frame substrate 600 shown in FIG. 33. The semiconductor chip 61 is electrically connected to the first routing line 46 via the bumps 71 by flip-chip ground. Therefore, the semiconductor chip 61 is electrically connected to the second routing line 56 through the first routing line 46, the first line layer 43, the metal lead 13, and the second line layer 53, and the heat generated by the semiconductor chip 61 can be transmitted through The first routing line 46, the first circuit layer 43, the adjusting member 20, the second training layer 53 and the second routing line 56 are conducted out.

[Example 7]

35-43 are diagrams of the manufacturing method of the lead frame substrate according to the seventh embodiment of the present invention, which has another aspect of the lead frame.

35 and 36 are a top plan view and a cross-sectional view of the lead frame 10, respectively. The lead frame 10 includes an outer metal frame 11, a plurality of metal leads 13, an inner metal frame 15 and a plurality of connecting rods 16. Each metal lead 13 has an outer end 131 and an inner end 133. The outer end 131 is integrally connected to the outer metal frame 11, and the inner end 133 faces away from the outer metal frame 11 inward. The inner metal frame 15 surrounds the central area of the outer metal frame 11 and is connected to the outer metal frame 11 through a connecting rod 16. In this embodiment, the lead frame 10 is further subjected to a selective half-etching process from its top side. Accordingly, the thicknesses of the outer metal frame 11, the inner metal frame 15 and the connecting rod 16 are reduced, and the metal lead 13 has a stepped cross-sectional profile, which is formed by a horizontal extension 136 and a vertical protrusion 137. In this figure, the vertical protrusion 137 is directed upward and protrudes from the upper surface of the horizontal extension 136.

37 and 38 are respectively a top plan view and a cross-sectional view of the adjusting member 20, which is set at the central area of the inner metal frame 15. The inner metal frame 15 can control the accuracy when the adjusting member 20 is placed, and the inner metal frame 15 is close to the peripheral side wall of the adjusting member 20. The thickness of the adjusting member 20 is greater than the thickness of the outer metal frame 11, the inner metal frame 15 and the connecting rod 16, and is substantially equal to the thickness of the horizontal extension portion 136 plus the vertical protrusion portion 137. In this embodiment, the adjusting member 20 includes a top contact pad 23 and a bottom contact pad 25 at two sides thereof, and they are electrically connected to each other through the metal through hole 27.

39, 40, and 41 are a top plan view, a bottom plan view, and a cross-sectional view of forming the resin layer 30, respectively. The resin layer 30 fills the space between the metal leads 13 and between the inner metal frame 15 and the adjusting member 20, and further covers the outer metal frame 11, the horizontal extension 136 of the metal lead 13, the inner metal frame 15 and the connection from above. Rod 16.

42 is a cross-sectional view of alternately forming the first anti-crack structure 45 and the first routing line 46 from above. The first anti-crack structure 45 covers the metal lead 13, the adjusting member 20 and the resin layer 30 from above. The first routing line 46 extends laterally on the first anti-crack structure 45, and is electrically connected to the metal lead 13 through the top metal blind hole 464 in the first anti-crack structure 45 for signal transmission. Connect to the top contact pad 23 of the adjustment member 20 to form a ground/power connection.

FIG. 43 is a bottom plan view of the lead frame substrate 700 separated from the outer metal frame 11. After the outer metal frame 11 is cut away, the metal leads 13 are electrically isolated from each other, and the outer ends 131 of the metal leads 13 are located at the outer edge of the lead frame 700.

As shown in the above embodiments, the present invention constructs a unique lead frame substrate, which has a regulating member combined with the lead frame and an anti-cracking structure on the regulating member/resin interface to exhibit better reliability. In a preferred embodiment of the present invention, the lead frame substrate includes an adjusting member, a plurality of metal leads, a resin layer, a first anti-cracking structure and a first routing wire. The lead frame substrate can be manufactured by the following steps: providing a lead frame, which includes a plurality of metal leads, and further includes an inner metal frame and/or an outer metal frame, wherein the metal leads are located in the outer metal frame, and Encircle a predetermined area in the outer metal frame laterally, or/and the metal leads are located outside the inner metal frame and surround the inner metal frame laterally; set an adjusting member at the predetermined area in the outer/inner metal frame , Wherein the adjusting member has a top contact pad on its top side and a bottom contact pad on its bottom side; a resin layer is provided, which covers the peripheral side wall of the adjusting member and fills the space between the metal leads; forms a first barrier The crack structure is on the top side of the adjusting member, the top of the metal leads and the top surface of the resin layer; and a first routing line is formed, which extends laterally on the first anti-crack structure and passes through the top metal blind hole , Thermally conducts to the top contact pad of the regulator, and is electrically coupled to the top of the metal lead. After depositing the resin layer, the outer metal frame can be removed. Optionally, the lead frame substrate of the present invention may further include a second anti-cracking structure and a second routing line by the following steps: forming a second anti-cracking structure on the bottom side of the adjusting member, the metal The bottom end of the lead wire and the bottom surface of the resin layer; and a second routing line is formed, which extends laterally under the second anti-crack structure and is thermally conducted to the bottom contact pad of the adjusting member through the bottom metal blind hole, And electrically coupled to the bottom end of the metal lead.

Unless specifically described or steps that must occur sequentially, the order of the above steps is not limited to the above list, and can be changed or rearranged according to the required design.

The adjusting member is a non-electronic component, which can be used as a heat sink and helps maintain the flatness of the substrate when under external or internal tension/stress. In a preferred embodiment, the thermal conductivity of the adjusting member is greater than 10W/mK, and includes a thermally conductive and electrically insulating block, a top contact pad on the top side of the thermally conductive and electrically insulating block, and a bottom on the bottom side of the thermally conductive and electrically insulating block Contact pad. In order to improve the structural strength, the mechanical strength of the adjusting member is usually greater than the mechanical strength of the resin layer. For example, compared to the epoxy resin elastic modulus of about 10 GPa of the resin layer, the elastic modulus of the adjusting member is preferably greater than 200 GPa. In addition, the coefficient of thermal expansion (CTE) of the adjusting member is preferably lower than 10 ppm/°C to reduce the problem of chip/substrate CTE mismatch. Specifically, because the low CTE of the adjustment member can reduce the CTE mismatch between the wafer and the pad setting area (covered by the adjustment member), and prevent the pad setting area from warping during thermal cycling, the alignment adjustment can be avoided The conductive contacts (such as bumps) that are completely covered by the adjusting member are cracked. Optionally, the top contact pad and the bottom contact pad of the adjusting member can be electrically connected to each other. For example, in order to achieve grounding/power connection, the adjusting member may further have a metal through hole extending through the thermally conductive and electrically insulating block to provide electrical connection between the top contact pad and the bottom contact pad

These metal leads can be used as vertical signal conduction paths, and can optionally provide a ground/power plane for energy transfer and return. In a preferred embodiment, part of the metal leads can pass through the first circuit layer to be electrically connected to a part of the top contact pad of the regulator, wherein the first circuit layer is deposited on the top surface of the resin layer and contacts the top contact pad and The top of the metal lead; or/and part of the metal lead can pass through the second circuit layer and be electrically connected to part of the bottom contact pad of the regulator, wherein the second circuit layer is deposited on the bottom surface of the resin layer and contacts the bottom contact pad and the metal lead Bottom end. The first circuit layer and the second circuit layer can be patterned metal layers, which can improve the wiring flexibility of the lead frame substrate.

The resin layer can be joined to the adjustment member and the metal lead. Through the planarization process, the top surface of the resin layer can be substantially coplanar with the outer surface of the top contact pad of the regulator and the top of the metal lead, and the bottom surface of the resin layer can contact the outer surface of the pad and the bottom of the metal lead with the bottom of the regulator It is substantially coplanar.

The first anti-cracking structure and the second anti-cracking structure are electrically insulating, and can be used as crack stoppers to prevent bad cracks from forming in the resin layer. In a preferred embodiment, the first anti-crack structure includes a first joint base layer and a first continuous interlaced fiber sheet mixed in the first joint base layer, and the second anti-crack structure includes a second joint The base layer and a second continuous interlaced fiber sheet mixed in the second joining base layer. The first and second continuous interlaced fiber sheets respectively cover the top and bottom ends of the regulator/resin interface. With the interlaced structure of the first and second continuous interlaced fiber sheets, the cracks generated at the adjusting member/resin interface or/and formed in the resin layer can be prevented from extending into the first and second anti-cracking layer structures, thereby ensuring The reliability of the routing lines on the first and second anti-cracking structures.

The first routing line is a patterned metal layer, which extends laterally on the top side of the adjusting member and the top surface of the resin layer, and is separated from the adjusting member/resin interface through the first anti-cracking structure. The reliability of the first routing wire can be ensured by the first anti-cracking structure between the first routing wire and the adjusting member/resin interface. Similarly, the second routing line is a patterned metal layer, which extends laterally below the bottom side of the adjusting member and the bottom surface of the resin layer, and is separated from the adjusting member/resin interface through the second anti-cracking structure to ensure the second routing The reliability of the line. In a preferred embodiment, the first routing line passes through the top metal blind via, thermally conducts to the top contact pad of the adjusting element, and is electrically coupled to the top of the metal lead, and the second routing line passes through the bottom metal blind The hole is thermally conducted to the bottom contact pad of the adjusting member, and is electrically coupled to the bottom end of the metal lead.

The present invention also provides a semiconductor assembly, in which the semiconductor chip is electrically connected to the lead frame substrate through various connection media, including conductive bumps (such as gold bumps or solder bumps). For example, the semiconductor chip can be electrically connected to the first routing line through a plurality of bumps that are aligned and covered by the adjusting member. In a preferred embodiment, each bump for connecting the chip is completely located in the area completely covered by the adjusting member, and each bump does not extend laterally beyond the peripheral edge of the adjusting member.

The assembly can be a first-stage or second-stage single crystal or polycrystalline device. For example, the assembly may be a first-level package including a single chip or multiple chips. Alternatively, the assembly may be a second-level module including a single package or multiple packages, wherein each package may include a single or multiple chips. The semiconductor chip can be a packaged chip or an unpackaged chip. In addition, the semiconductor chip can be a bare chip, or a wafer-level package die.

The term "covering" means incomplete and complete coverage in the vertical and/or lateral directions. For example, in a preferred embodiment, the first anti-cracking structure covers the top side of the adjusting member, the top surface of the resin layer, and the adjusting member/resin interface, regardless of whether another element (such as the first bonding resin) is located in the first anti-cracking structure. Between the structure and the adjusting member and between the first anti-cracking structure and the resin layer.

The semantics of "connected to" and "attached to" include contact and non-contact with a single or multiple components. For example, in a preferred embodiment, the first routing wire can be attached to the first bonding base layer, regardless of whether the first routing wire contacts the first bonding base layer or is separated from the first bonding base layer by the first bonding resin.

The terms "electrical connection" and "electrical coupling" mean direct or indirect electrical connection. For example, in a preferred embodiment, the semiconductor chip is electrically connected to the metal lead through the first routing line, and is not in contact with the metal lead.

The lead frame substrate prepared by this method has high reliability, low price, and is very suitable for mass production. The manufacturing method of the present invention has high applicability, and combines various mature electrical and mechanical connection technologies in a unique and progressive way. In addition, the manufacturing method of the present invention can be implemented without expensive tools. Therefore, compared with traditional technology, this manufacturing method can greatly improve the yield, yield, performance and cost-effectiveness.

The embodiments described here are for illustrative purposes, and these embodiments may simplify or omit elements or steps that are well known in the art so as not to obscure the characteristics of the present invention. Similarly, in order to make the drawings clear, the drawings may omit repeated or unnecessary components and component symbols.

100: Lead frame substrate

10: Lead frame

11: Metal frame

13: Metal lead

20: Adjusting parts

23: Top contact pad

25: bottom contact pad

30: resin layer

45: The first anti-cracking structure

451: The first continuous interlaced fiber sheet

453: first joint base layer

454: Blind Hole

46: The first routing line

464: Top metal blind hole

Claims (10)

A lead frame substrate comprising: a plurality of metal leads having top and bottom ends; an adjustment member having flat and parallel top and bottom sides, a top contact pad on the top side, and a bottom contact on the bottom side Pad, the adjusting member is arranged in a designated position surrounded by the metal leads, wherein the adjusting member has a thermal expansion coefficient of less than 10ppm/°C and a thermal conductivity greater than 10W/mk; a resin layer filled in the metal leads In the space between the adjusting member and attached to the peripheral side wall of the adjusting member; and a first anti-cracking structure including a first continuous interlaced fiber sheet covering the gap between the adjusting member and the resin layer The interface further extends laterally on the top side of the adjusting member, the top ends of the metal leads, and the top surface of the resin layer, and covers the top side of the adjusting member and the metal leads The top and the top surface of the resin layer. In the lead frame substrate described in claim 1, wherein the first anti-cracking structure further includes a first bonding base layer, and the first continuous interlaced fiber sheet is mixed in the first bonding base layer. The lead frame substrate as described in item 2 of the scope of patent application further includes: a first routing wire attached to the first bonding base layer and extending laterally to the adjusting member and the resin layer, wherein The first routing line is separated from the interface between the adjusting member and the resin layer by the first continuous interlaced fiber sheet and the first bonding base layer, and is thermally conducted through the top metal blind hole of the first anti-cracking structure The top contact pads of the adjusting member are electrically coupled to the metal leads. As described in item 3 of the scope of patent application, the lead frame substrate further includes: a metal frame having flat top and bottom surfaces and a through hole, wherein the metal frame is surrounded by the metal leads, and the adjusting member It is arranged in the opening and keeps a distance from the inner side wall of the metal frame. In the lead frame substrate described in item 1 of the scope of patent application, the thermal expansion coefficient of the resin layer is higher than the thermal expansion coefficient of the adjusting member. In the lead frame substrate as described in item 1 of the scope of patent application, the elastic modulus of the adjusting member is greater than 200 GPa. The lead frame substrate described in item 3 of the scope of patent application further includes: a second anti-crack structure covering the bottom side of the adjusting member, the bottom ends of the metal leads, and the bottom surface of the resin layer , Wherein the second anti-cracking structure includes a second continuous interlaced fiber sheet extending laterally at the interface between the adjusting member and the resin layer. As described in item 7 of the scope of patent application, the lead frame substrate further includes: a second routing wire extending laterally to the adjusting member and the resin layer, wherein the second routing wire uses the second anti-crack The structure is separated from the interface between the adjusting element and the resin layer, and is thermally conducted to the bottom contact pads of the adjusting element through the bottom metal blind hole of the second anti-cracking structure, and electrically coupled to the Some metal leads. In the lead frame substrate described in claim 1, wherein the top contact pads of the adjusting member are electrically coupled to the bottom contact pads. A flip chip assembly comprising: the lead frame substrate as described in item 3, item 4, item 7 or item 8 of the scope of patent application; and a semiconductor chip, which is electrically connected through a plurality of bumps To the lead frame substrate, the bumps are arranged in the space between the semiconductor chip and the lead frame substrate, and at least one of the bumps overlaps the adjustment member and is electrically connected through the first routing line To these metal leads.

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