TWI769459B - Substrate structure and manufacturing method thereof - Google Patents
Substrate structure and manufacturing method thereof Download PDFInfo
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- TWI769459B TWI769459B TW109117146A TW109117146A TWI769459B TW I769459 B TWI769459 B TW I769459B TW 109117146 A TW109117146 A TW 109117146A TW 109117146 A TW109117146 A TW 109117146A TW I769459 B TWI769459 B TW I769459B
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Abstract
Description
本發明係有關一種封裝基板,尤指一種改變線體外觀之基板結構及其製法。 The present invention relates to a packaging substrate, in particular to a substrate structure for changing the appearance of a wire body and a manufacturing method thereof.
隨著科技的演進與電子產業的蓬勃發展,電子產品也逐漸邁向多高性能的趨勢,其中,訴求高頻高速(如5G)的電子產品愈來愈多。 With the evolution of technology and the vigorous development of the electronic industry, electronic products are gradually moving towards a trend of high performance. Among them, there are more and more electronic products that require high frequency and high speed (such as 5G).
第1A圖係為習知封裝基板1之剖面示意圖。如第1A圖所示,習知封裝基板1包含有一具有導電通孔100之核心層10、設於該核心層10上之線路層11與增層結構13以及一覆蓋該增層結構13之防銲層15,其中,該導電通孔100係填有絕緣填充材100a,且該增層結構13係具有至少一介電層130、設於該介電層130上之佈線層131及複數電性連接該佈線層131與該線路層11之導電盲孔132,而該防銲層15係具有複數開孔150,且令該最外側佈線層131外露於該開孔150,以結合銲球17,使該封裝基板1藉由該銲球17外接半導體晶片(圖略)或電路板(圖略)。
FIG. 1A is a schematic cross-sectional view of a conventional package substrate 1 . As shown in FIG. 1A , a conventional package substrate 1 includes a
隨著電子產品對於訊號傳送之高頻高速的需求提高,習知封裝基板1中的傳輸線路(如該線路層11及佈線層131)的電性插入損耗(Insertion Loss)
愈趨嚴重,故可藉由採用低損耗(低Dk/Df)的介電材製作該封裝基板1之絕緣部(例如該防銲層15及介電層130),以降低訊號的衰減而提高信號完整性。
With the increasing demand for high-frequency and high-speed signal transmission in electronic products, the electrical insertion loss (Insertion Loss) of the transmission lines (such as the
然而,習知封裝基板1因選用低損耗的介電材製作絕緣部,容易增加其它電性及製程上的不穩定,如低損耗的介電材對熱的敏感度增加,易使該封裝基板1呈現不穩定的狀態。 However, the conventional packaging substrate 1 uses a low-loss dielectric material to form the insulating portion, which tends to increase other electrical properties and process instability. 1 presents an unstable state.
再者,由於金屬線路(如該線路層11及佈線層131)之外觀表面愈平坦,如第1B圖所示,則插入損耗愈小,故業界亦可採用降低金屬線路的表面粗糙度之方式,取代選用低損耗介電材之方式,但該金屬線路之平坦表面與絕緣材(該防銲層15及介電層130)之結合性不佳,容易發生脫層之間題。
Furthermore, since the appearance surface of the metal lines (such as the
因此,如何克服上述習知技術之種種問題,實已成為目前業界亟待克服之難題。 Therefore, how to overcome the above-mentioned various problems of the conventional technology has become an urgent problem to be overcome in the current industry.
鑑於上述習知技術之缺失,本發明提供一種基板結構,係包括:基板本體;以及線路本體,係基於該基板本體之型態作配置且定義有導電跡線及至少一形成於該導電跡線上之凹部。 In view of the above-mentioned lack of the prior art, the present invention provides a substrate structure, which includes: a substrate body; and a circuit body, which are configured based on the shape of the substrate body and define conductive traces and at least one formed on the conductive traces the recess.
本發明復提供一種基板結構之製法,係包括:提供一配置有至少一導電體之基板本體;移除該導電體之部分材質,以形成線路本體,其中,該線路本體定義有導電跡線及至少一形成於該導電跡線上之凹部。 The present invention further provides a method for manufacturing a substrate structure, which includes: providing a substrate body configured with at least one conductor; removing part of the material of the conductor to form a circuit body, wherein the circuit body defines conductive traces and At least one recess is formed on the conductive trace.
前述之基板結構及其製法中,該導電跡線係具有一體相連之第一導電線體及第二導電線體,且該第一導電線體之厚度係大於該第二導電線體之厚度,以令該第一導電線體與該第二導電線體形成該凹部。例如,該凹部之深度 係為該線路本體之厚度的1/2至1/3。或者,該凹部之寬度係為該線路本體之寬度的1/3。 In the aforementioned substrate structure and its manufacturing method, the conductive traces have a first conductive wire body and a second conductive wire body that are integrally connected, and the thickness of the first conductive wire body is greater than the thickness of the second conductive wire body, The concave portion is formed by the first conductive wire body and the second conductive wire body. For example, the depth of the recess It is 1/2 to 1/3 of the thickness of the circuit body. Alternatively, the width of the recess is 1/3 of the width of the circuit body.
前述之基板結構及其製法中,該凹部係為上下貫穿的穿孔狀。例如,該凹部之寬度係為該線路本體之寬度的1/3。或者,該線路本體係具有複數相互間隔配置之該凹部。 In the aforementioned substrate structure and its manufacturing method, the concave portion is in the shape of a perforation penetrating up and down. For example, the width of the recess is 1/3 of the width of the circuit body. Alternatively, the circuit body may have a plurality of the recesses arranged at a distance from each other.
前述之基板結構及其製法中,該凹部係形成於該線路本體之相對兩側。例如,該線路本體之相對兩側之其中一凹部之深度係為該線路本體之厚度的1/2至1/3。或者,該線路本體之相對兩側之其中一凹部之寬度係為該線路本體之寬度的1/3。 In the aforementioned substrate structure and its manufacturing method, the recesses are formed on opposite sides of the circuit body. For example, the depth of one of the recesses on the opposite sides of the circuit body is 1/2 to 1/3 of the thickness of the circuit body. Alternatively, the width of one of the recesses on the opposite sides of the circuit body is 1/3 of the width of the circuit body.
由上可知,本發明之基板結構及其製法中,主要藉由該線路本體佈設該凹部之設計,使線路本體與絕緣材之間的結合性增強,因而該線路本體之表面不需粗糙化,即可有效結合該絕緣材,以避免脫層之問題,故相較於習知技術,本發明之線路本體之表面可依需求平坦化,因而有利於降低該線路本體之電性插入損耗。 As can be seen from the above, in the substrate structure and the manufacturing method of the present invention, the bonding between the circuit body and the insulating material is enhanced mainly by the design of the circuit body arranging the concave portion, so that the surface of the circuit body does not need to be roughened, The insulating material can be effectively combined to avoid the problem of delamination. Therefore, compared with the prior art, the surface of the circuit body of the present invention can be flattened as required, which is beneficial to reduce the electrical insertion loss of the circuit body.
再者,藉由該凹部之設計,即可降低插入損耗,故相較於習知技術,本發明之基板結構無需選用低損耗的介電材製作該基板本體之絕緣材,因而能避免其它電性及製程上的不穩定等問題。 Furthermore, the insertion loss can be reduced by the design of the concave portion. Therefore, compared with the prior art, the substrate structure of the present invention does not need to use low-loss dielectric materials to form the insulating material of the substrate body, thereby avoiding other electrical currents. performance and process instability.
1:封裝基板 1: Package substrate
10,20,30’:核心層 10, 20, 30': core layer
100,201,301:導電通孔 100, 201, 301: Conductive Vias
100a:絕緣填充材 100a: Insulating filler
11,2b,3b:線路層 11,2b,3b: circuit layer
13:增層結構 13: Build-up structure
130,260,360:介電層 130, 260, 360: Dielectric layer
131,261,361:佈線層 131, 261, 361: wiring layer
132,262,362:導電盲孔 132,262,362: Conductive blind vias
15:防銲層 15: Solder mask
150,250,350,350’:開孔 150, 250, 350, 350': opening
17:銲球 17: Solder Ball
2,2’,2”,3,3’,3”,5:基板結構 2,2',2",3,3',3",5: Substrate structure
2a,2a’,2a”,3a,3a’,5a:基板本體 2a, 2a', 2a", 3a, 3a', 5a: Substrate body
20a:第一金屬層 20a: first metal layer
20b:第二金屬層 20b: second metal layer
200:通孔 200: Through hole
203,203’,263,363:電性接觸墊 203, 203', 263, 363: Electrical contact pads
21,21’,31,31’,31”,51,51’,51”:線路本體 21, 21', 31, 31', 31", 51, 51', 51": line body
21a,31a:第一導電線體 21a, 31a: first conductive wire body
21b,31b:第二導電線體 21b, 31b: the second conductive wire
210,210’,310,310’,310”,510,510’,510”:凹部 210, 210’, 310, 310’, 310”, 510, 510’, 510”: Recess
211,311,511:導電跡線 211, 311, 511: Conductive traces
22,32,52:導電體 22, 32, 52: Conductors
23:第一阻層 23: The first resistance layer
230:第一開口區 230: First opening area
24:第二阻層 24: Second resistance layer
240:第二開口區 240: Second open area
25,35,35’:絕緣保護層 25, 35, 35': insulating protective layer
26,36:增層部 26,36: Buildup Department
30:承載件 30: Bearer
30a:金屬層 30a: Metal layer
34:阻層 34: Resist layer
340:開口區 340: Open area
d1,d2:厚度 d1,d2: thickness
h:深度 h: depth
L:基準曲線 L: benchmark curve
L1:第一曲線 L1: first curve
L2:第二曲線 L2: Second curve
L3:第三曲線 L3: Third Curve
R,t:寬度 R,t: width
第1A圖係為習知封裝基板之剖面示意圖。 FIG. 1A is a schematic cross-sectional view of a conventional package substrate.
第1B圖係為第1A圖之局部立體示意圖。 FIG. 1B is a partial perspective view of FIG. 1A .
第2A至2H圖係為本發明之基板結構之製法之第一實施例之剖面示意圖。 2A to 2H are schematic cross-sectional views of the first embodiment of the manufacturing method of the substrate structure of the present invention.
第2G’圖係為第2G圖之另一態樣。 Picture 2G' is another aspect of picture 2G.
第2G”圖係為第2G圖之局部平面示意圖。 Figure 2G" is a partial plan view of Figure 2G.
第2H’圖係為第2H圖之另一態樣之剖面示意圖。 Fig. 2H' is a schematic cross-sectional view of another aspect of Fig. 2H.
第3A至3F圖係為本發明之基板結構之製法之第二實施例之剖面示意圖。 FIGS. 3A to 3F are schematic cross-sectional views of the second embodiment of the manufacturing method of the substrate structure of the present invention.
第3F’圖係為第3F圖之另一態樣。 Figure 3F' is another aspect of Figure 3F.
第3G至3H圖係為第3F圖之後續製程之剖面示意圖。 FIGS. 3G to 3H are schematic cross-sectional views of subsequent processes of FIG. 3F.
第3H’圖係為第3G圖之後續製程之另一實施例的剖面示意圖。 Fig. 3H' is a schematic cross-sectional view of another embodiment of the subsequent process of Fig. 3G.
第4A圖係為第2H或3F圖之局部立體示意圖。 Fig. 4A is a partial perspective view of Fig. 2H or 3F.
第4B圖係為第2G’或3F’圖之局部立體示意圖。 Fig. 4B is a partial perspective view of Fig. 2G' or 3F'.
第4C圖係為第3H圖之局部立體示意圖。 Fig. 4C is a partial perspective view of Fig. 3H.
第5A圖係為第2H圖之另一實施例之剖面示意圖。 FIG. 5A is a schematic cross-sectional view of another embodiment of FIG. 2H.
第5B圖係為第5A圖之局部放大立體示意圖。 FIG. 5B is a partially enlarged perspective view of FIG. 5A .
第6圖係為本發明之基板結構與習知封裝基板之線路傳輸損耗比較圖。 FIG. 6 is a comparison diagram of the line transmission loss between the substrate structure of the present invention and the conventional package substrate.
以下藉由特定的具體實施例說明本發明之實施方式,熟悉此技藝之人士可由本說明書所揭示之內容輕易地瞭解本發明之其他優點及功效。 The following specific embodiments are used to illustrate the implementation of the present invention, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification.
須知,本說明書所附圖式所繪示之結構、比例、大小等,均僅用以配合說明書所揭示之內容,以供熟悉此技藝之人士之瞭解與閱讀,並非用以限定本發明可實施之限定條件,故不具技術上之實質意義,任何結構之修飾、比例 關係之改變或大小之調整,在不影響本發明所能產生之功效及所能達成之目的下,均應仍落在本發明所揭示之技術內容得能涵蓋之範圍內。同時,本說明書中所引用之如「上」、「第一」及「第二」等之用語,亦僅為便於敘述之明瞭,而非用以限定本發明可實施之範圍,其相對關係之改變或調整,在無實質變更技術內容下,當亦視為本發明可實施之範疇。 It should be noted that the structures, proportions, sizes, etc. shown in the drawings in this specification are only used to cooperate with the contents disclosed in the specification for the understanding and reading of those who are familiar with the art, and are not intended to limit the implementation of the present invention. Therefore, it does not have technical substantive significance, and any structural modifications and proportions The change of the relationship or the adjustment of the size should still fall within the scope that the technical content disclosed in the present invention can cover, without affecting the effect that the present invention can produce and the purpose that can be achieved. At the same time, terms such as "above", "first" and "second" quoted in this specification are only for the convenience of description, and are not used to limit the scope of the present invention. Changes or adjustments, without substantial changes to the technical content, should also be regarded as the scope of the present invention.
第2A至2H圖係為本發明之基板結構2之製法之第一實施例之剖視示意圖。於本實施例中,該基板結構2係為線路板,其製法係採用具核心層(core layer)之封裝基板之製程。
FIGS. 2A to 2H are schematic cross-sectional views of the first embodiment of the manufacturing method of the
如第2A圖所示,提供一基材,其由一核心層20及結合該核心層20相對兩側之第一金屬層20a所構成。接著,形成一貫穿該核心層20之通孔200,再形成第二金屬層20b於該第一金屬層20a上及該通孔200中,以於該通孔200中形成導電通孔201。
As shown in FIG. 2A , a base material is provided, which is composed of a
於本實施例中,該第一金屬層20a及該第二金屬層20b係為銅材。例如,該基材係為銅箔基板(Copper coated laminated,簡稱CCL)或其它態樣,且該核心層20之材質可選自如ABF(Ajinomoto Build-up Film)、聚乙烯醚(PPE)、聚四氟乙烯(PTFE)、FR4、FR5、雙順丁醯二酸醯亞胺/三氮阱(Bismaleimide triazine,簡稱BT)、液晶聚合物(Liquid Crystal Polymer)、聯二苯環丁二烯(benzocyclo-butene,簡稱BCB)、聚醯亞胺(Polyimide,簡稱PI)、芳香尼龍(Aramide)、環氧樹脂以及玻璃纖維等感光或非感光有機樹脂材料,但亦不限於上述材料種類。
In this embodiment, the
於其他實施例中,可於該導電通孔201內形成塞孔材料(圖略),如為絕緣材。 In other embodiments, a plug hole material (not shown), such as an insulating material, may be formed in the conductive via 201 .
如第2B圖所示,於該第二金屬層20b上形成一如乾膜或其它光阻態樣之第一阻層23,其具有複數外露部分該第二金屬層20b之第一開口區230。
As shown in FIG. 2B, a first resist
如第2C圖所示,蝕刻移除該些第一開口區230中之第二金屬層20b及其下方之第一金屬層20a,以形成電性連接該導電通孔201之圖案化導電體22。
As shown in FIG. 2C , the
如第2D圖所示,移除該第一阻層23,以露出該導電體22。
As shown in FIG. 2D , the first resist
如第2E圖所示,於該導電體22上形成一如乾膜或其它光阻態樣之第二阻層24,其具有至少一外露部分該導電體22之第二開口區240。
As shown in FIG. 2E , a second resist
如第2F至2G圖所示,蝕刻移除該第二開口區240中之部分導電體22,以構成具有凹部210之線路本體21,且令該線路本體21(形成有凹部210)與該導電體22(未形成凹部210)作為線路層2b。之後,移除該第二阻層24,以外露線路層2b,其中,該線路本體21係定義有一導電跡線211及至少一形成於該導電跡線211上之凹部210。
As shown in FIGS. 2F to 2G, part of the
於本實施例中,將形成有凹部210之線路本體21(或該導電跡線211)係定義有一體相連之第一導電線體21a與第二導電線體21b,該第一導電線體21a之厚度d1係大於該第二導電線體21b之厚度d2,以令該第一導電線體21a與該第二導電線體21b形成該凹部210,如第4A圖所示。例如,該凹部210係為溝渠狀,且該第一導電線體21a係作為溝渠側壁,而該第二導電線體21b係作為溝渠底部。較佳地,該凹部210之深度h係為該第一導電線體21a(或該線路本體21)之厚度d1的1/2至1/3,且該凹部210之寬度t係為該線路本體21之寬度R的1/3。
In this embodiment, the circuit body 21 (or the conductive trace 211 ) formed with the
再者,該凹部210未貫穿該導電跡線211,也未斷開該導電跡線211。或者,如第2G’圖所示之線路本體21’,該凹部210’可為穿孔狀,其上下貫穿該導電跡線211,且如第4B圖所示,可於該導電跡線211上形成複數相互間隔配置之矩形穿孔,其中,該凹部210’之寬度t係為該導電跡線211之寬度R的1/3。
Furthermore, the
如第2H圖所示,接續第2G圖之製程,於該核心層20、線路層2b及導電通孔201上形成一如防銲層之絕緣保護層25,以獲取一基板結構2,且該絕緣保護層25填滿該凹部210。
As shown in FIG. 2H, following the process of FIG. 2G, an insulating
於本實施例中,該基板結構2係包括一基板本體2a以及一設置於該基板本體2a內的線路本體21,其中,該基板本體2a係包含該具有導電通孔201之核心層20、導電體22及絕緣保護層25。
In this embodiment, the
於另一實施例中,如第2H’圖所示之基板結構2’,其基板本體2a’可包含一形成於該核心層20及線路層2b上之增層部26。例如,該增層部26係包含至少一可填滿該凹部210之介電層260、設於該介電層260上之佈線層261及電性連接該佈線層261與該線路層2b之導電盲孔262,且該絕緣保護層25係設於該增層部26之最外側佈線層261上,並令該最外側佈線層261之部分表面外露於該絕緣保護層25之開孔250,以作為電性接觸墊263,俾供結合如銲球之導電元件(圖略),使該基板結構2’可藉由該導電元件(圖略)外接如半導體晶片之電子元件(圖略)或電路板(圖略)。具體地,該介電層260之材質係例如為聚對二唑苯(Polybenzoxazole,簡稱PBO)、聚醯亞胺(Polyimide,簡稱PI)、預浸材(Prepreg,簡稱PP)等,且該佈線層261與該導電盲孔262係為線路重佈層(Redistribution layer,簡稱RDL)形式,其材質均為銅材或其它金屬材。
In another embodiment, as shown in FIG. 2H' of the substrate structure 2', the
另外,該線路本體21復具有連接該導電跡線211端處之電性接觸墊203,如第2G”圖所示,以導通各層電路,且該凹部210,210’不會形成於該電性接觸墊203及該增層部26之電性接觸墊263上。應可理解地,該導電體22亦形成有導通各層電路之電性接觸墊203’,且該凹部210,210’亦不會形成於各該電性接觸墊203’上。需注意,於電路設計中,有關高頻傳輸訊號(如5G行動通訊裝置所用之頻率28GHz以上)的導電跡線可作為該線路本體21,21’。
In addition, the
第3A至3H圖係本發明之基板結構3之製法之第二實施例之剖面示意圖。於本實施例中,該基板結構3係為線路板,其製法係採用無核心層(coreless)之封裝基板之製程。
FIGS. 3A to 3H are schematic cross-sectional views of the second embodiment of the manufacturing method of the
如第3A圖所示,提供一表面具有金屬層30a(如銅材或其它金屬材)之承載件30,如銅箔基板,再以電鍍方式形成一如銅材或其它金屬材之圖案化之導電體32於該金屬層30a上。
As shown in FIG. 3A, a
如第3B圖所示,於該導電體32上形成一如乾膜或其它光阻態樣之阻層34,其具有至少一外露部分該導電體32之開口區340。
As shown in FIG. 3B , a resist
如第3C圖所示,蝕刻移除該開口區340中之部分導電體32,以構成具有凹部310之線路本體31,且令該線路本體31與該導電體32作為線路層3b。之後,移除該阻層34,其中,該線路本體31係定義有一導電跡線311及至少一形成於該導電跡線311上之凹部310。
As shown in FIG. 3C, part of the
於本實施例中,將形成有凹部310之線路本體31(或該導電跡線311)定義有一體相連之第一導電線體31a與第二導電線體31b,該第一導電線體31a之厚度d1係大於該第二導電線體31b之厚度d2,以令該第一導電線體31a與該第二導電線體31b形成該有凹部310,如第4A圖所示。例如,該凹部310係為溝渠狀,且該第一導電線體31a係作為溝渠側壁,而該第二導電線體31b係作為溝渠底部。較佳地,該凹部310之深度h係為該第一導電線體31a(或該線路本體31)之厚度d1的1/2至1/3,且該凹部310之寬度t係為該線路本體31之寬度R的1/3。
In this embodiment, the circuit body 31 (or the conductive traces 311 ) formed with the
再者,如第4B圖所示之線路本體31’,該凹部310’亦可為穿孔狀,其貫穿該導電跡線311,且如第4B圖所示,可於該導電跡線311上形成複數相互間隔配置之矩形穿孔,其中,該凹部310’之寬度t係為該導電跡線311之寬度R的1/3。
Furthermore, as shown in the
如第3D圖所示,於該承載件30與該線路層3b上形成一增層部36。
As shown in FIG. 3D, a build-up
於本實施例中,該增層部36係包含至少一介電層360、設於該介電層360上之佈線層361及電性連接該佈線層361與該線路層3b之導電盲孔362。具體地,該介電層360之材質係例如為聚對二唑苯(Polybenzoxazole,簡稱PBO)、
聚醯亞胺(Polyimide,簡稱PI)、預浸材(Prcpreg,簡稱PP)等,且該佈線層361與該導電盲孔362係為線路重佈層(Redistribution layer,簡稱RDL)形式,其之材質均為銅材或其它金屬材。
In this embodiment, the build-up
如第3E至3F圖所示,以剝離方式移除該承載件30,再蝕刻移除該金屬層30a,以獲取兩基板結構3,使該線路本體31外露於該介電層360,且該凹部310埋設於該介電層360中。
As shown in FIGS. 3E to 3F, the
於本實施例中,該基板結構3係包括一基板本體3a以及一設置於該基板本體3a內的線路本體31,且該基板本體3a係包含該增層部36及導電體32。
In this embodiment, the
再者,於移除該承載件30之前,可先形成一如防銲層之絕緣保護層35於該增層部36之最外側佈線層361上,故該基板本體3a可包含該絕緣保護層35。例如,該絕緣保護層35具有至少一開孔350,以令該最外側佈線層361外露於該絕緣保護層35之開孔350,供作為電性接觸墊363,以結合如銲球之導電元件(圖略),使該基板結構3可藉由該導電元件(圖略)外接如半導體晶片之電子元件(圖略)或電路板(圖略)。
Furthermore, before removing the
又,若第3C圖改採第4B圖所示之凹部310’形態進行後續製程,將得到如第3F’圖所示之基板結構3’。 In addition, if the shape of the concave portion 310' shown in Fig. 4B is changed to be used in the subsequent process in Fig. 3C, the substrate structure 3' shown in Fig. 3F' will be obtained.
另外,基於第3F圖之製程,如第3G圖所示,可於該線路本體31之外露表面上形成阻層34,並可藉由阻層34蝕刻形成對應該凹部310之另一凹部310”,以於該線路本體31”之相對兩側均形成凹部310,310”,再移除該阻層34,以獲取如第3H及4C圖所示之基板結構3”,其線路本體31”之剖面大致呈H形,即該線路本體31’之相對兩側均具有溝渠狀凹部310,310”。進一步,可形成一如防銲層之絕緣保護層35’於該介電層360上以覆蓋該線路本體31”及其凹部310”,故該基板本體3a’可包含兩層絕緣保護層35,35’。例如,該絕緣保護層35’具有至少一開孔350’,以令部分該導電體32外露於該開孔350’,供結合如銲球之導電元件(圖
略),使該基板結構3”可藉由該導電元件(圖略)外接如半導體晶片之電子元件(圖略)或電路板(圖略)。
In addition, based on the process of FIG. 3F, as shown in FIG. 3G, a resist
或者,如第3H’圖所示,接續於第3G圖後,於移除該阻層34後,可將兩基板結構3”(僅具一層絕緣保護層35)壓合於一具有導電通孔301之核心層30’之相對兩側上,以形成另一基板結構2”,其基板本體2a”係包含該具有導電通孔301之核心層30’、導電體32、絕緣保護層35及該增層部36,且該導電體32電性連接該導電通孔301。
Alternatively, as shown in Fig. 3H', following Fig. 3G, after removing the resist
因此,本發明之基板結構2,2’,2”,3,3’,3”之製法中,主要藉由沿該線路本體21,21’,31,31’,31”之延伸路徑佈設該凹部210,210’,310,310’,310”,以增加該線路本體21,21’,31,31’,31”的表面積,使該線路層2b,3b與絕緣材(如介電層260,360或絕緣保護層25,35’)之間的結合性增強,因而該線路層2b,3b之金屬表面不需粗糙化,即可有效結合該絕緣材,以避免脫層之問題,故相較於習知技術,本發明之線路層2b,3b之金屬表面可依需求平坦化,且線路層2b,3b之金屬表面積增加,因而有利於降低該線路層2b,3b及佈線層261,361與導電盲孔262,362之整體電性插入損耗(Insertion Loss)。具體地,如第6圖所示,於高頻下,相較於習知矩形線路本體(即未形成凹部)在高頻範圍(如40GHz以上)的插入損耗(如第6圖所示之基準曲線L),本發明之基板結構2,2’,2”,3,3’,3”藉由溝渠狀凹部210,310之設計(如第4A圖所示)能降低5%至7%的插入損耗(如第6圖所示之第一曲線L1),且藉由穿孔狀凹部210’,310’之設計(如第4B圖所示)能降低30%至42%的插入損耗(如第6圖所示之第二曲線L2),而藉由兩側凹部310,310”之設計(如第4C圖所示)能降低17%至24%的插入損耗(如第6圖所示之第三曲線L3)。
Therefore, in the manufacturing method of the
再者,藉由該凹部210,210’,310,310’,310”之設計,即可降低插入損耗,故相較於習知技術,本發明之基板結構2,2’,2”,3,3’,3”無需選用低損耗的介電
材製作該基板本體2a,2a’,2a”,3a’,3a之絕緣材(如介電層261,361或絕緣保護層25,35,35’),因而能避免其它電性及製程上的不穩定等問題。
Furthermore, the insertion loss can be reduced by the design of the
又,第4B圖所示之穿孔狀凹部210’,310’可視圖案化線路層2b,3b之設計作調整,其穿孔數量愈多愈好。
In addition, the perforated recesses 210', 310' shown in Fig. 4B can be adjusted according to the design of the patterned
進一步,本發明之製法更可應用於導線架形式之基板結構5,如第5A及5B圖所示。例如,該基板結構5係包含有一如板體之基板本體5a及複數配置於該基板本體5a周圍之如導腳狀之導電體52,且令該些導電體52之至少其中一者進行蝕刻製程,以移除該導電體52之部分材質,供作為具有導電跡線511及凹部510,510’,510”之線路本體51,51’,51”。
Further, the manufacturing method of the present invention can be applied to the
本發明復提供一種基板結構2,2’,2”,3,3’,3”,5,係包括:一基板本體2a,2a’,2a”,3a,3a’,5a以及一線路本體21,21’,31,31’,31”,51,51’,51”。
The present invention further provides a
所述之基板本體2a,2a’,2a”,3a,3a’,5a係為封裝基板或導線架形式。
The
所述之線路本體21,21’,31,31’,31”,51,51’,51”係基於該基板本體2a,2a’,2a”,3a,3a’,5a之型態作配置且定義有一導電跡線211,311,511及至少一形成於該導電跡線211,311,511上之凹部210,210’,310,310’,310”,510,510’,510”。
The
於一實施例中,該導電跡線211,311,511係具有一體相連之第一導電線體21a,31a及第二導電線體21b,31b,且該第一導電線體21a,31a之厚度d1係大於該第二導電線體21b,31b之厚度d2,以令該第一導電線體21a,31a與該第二導電線體21b,31b形成該凹部210,310,510。例如,該凹部210,310,510之深度h係為該線路本體21,31,51之厚度d1的1/2至1/3。或者,該凹部210,310,510之寬度t係為該線路本體21,31,51之寬度R的1/3。
In one embodiment, the conductive traces 211 , 311 , 511 have a first
於一實施例中,該凹部210’,310’,510’係為上下貫穿的穿孔狀。例如,該凹部210’,310’,510’之寬度t係為該線路本體21’,31’,51’之寬度R的1/3。進一步,該線路本體21’,31’,51’係具有複數相互間隔配置之該凹部210’,310’,510’。 In one embodiment, the concave portions 210', 310', 510' are in the shape of perforations penetrating up and down. For example, the width t of the recesses 210', 310', 510' is 1/3 of the width R of the circuit bodies 21', 31', 51'. Further, the circuit bodies 21', 31', 51' have a plurality of the concave portions 210', 310', 510' which are spaced apart from each other.
於一實施例中,該凹部310,310”,510,510”係形成於該線路本體31”,51”之相對兩側。例如,該線路本體31”,51”之相對兩側之其中一凹部310,310”,510,510”之深度h係為該線路本體31”,51”之厚度d1的1/2至1/3。或者,該線路本體31”,51”之相對兩側之其中一凹部310,310”,510,510”之寬度t係為該線路本體31”,51”之寬度R的1/3。
In one embodiment, the
綜上所述,本發明之基板結構及其製法,係藉由該線路本體具有凹部之設計,以降低電性插入損耗,且能強化各層之間的結合性,以避免脫層之問題。 To sum up, in the substrate structure and the manufacturing method of the present invention, the circuit body is designed with a concave portion to reduce the electrical insertion loss, and can strengthen the bonding between the layers to avoid the problem of delamination.
上述實施例係用以例示性說明本發明之原理及其功效,而非用於限制本發明。任何熟習此項技藝之人士均可在不違背本發明之精神及範疇下,對上述實施例進行修改。因此本發明之權利保護範圍,應如後述之申請專利範圍所列。 The above embodiments are used to illustrate the principles and effects of the present invention, but not to limit the present invention. Any person skilled in the art can make modifications to the above embodiments without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the right of the present invention should be listed in the scope of the patent application described later.
2a,3a:基板本體 2a, 3a: Substrate body
21,31:線路本體 21,31: Line body
21a,31a:第一導電線體 21a, 31a: first conductive wire body
21b,31b:第二導電線體 21b, 31b: the second conductive wire
210,310:凹部 210, 310: Recess
211,311:導電跡線 211, 311: Conductive traces
22,32:導電體 22,32: Conductor
R,t:寬度 R,t: width
Claims (16)
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| TW200708219A (en) * | 2005-08-09 | 2007-02-16 | Phoenix Prec Technology Corp | Circuit board structure and fabricating method thereof |
| CN103718656A (en) * | 2011-11-10 | 2014-04-09 | 株式会社村田制作所 | High-frequency signal line and electronic equipment including the high-frequency signal line |
| TW201717716A (en) * | 2015-09-17 | 2017-05-16 | 味之素股份有限公司 | Wiring board manufacturing method |
| TW201722231A (en) * | 2015-11-30 | 2017-06-16 | 碁鼎科技秦皇島有限公司 | Printed circuit board and method for manufacturing same |
| CN111050466A (en) * | 2019-12-31 | 2020-04-21 | 安捷利(番禺)电子实业有限公司 | PCB with low insertion loss and high peeling strength and manufacturing method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| TW202145843A (en) | 2021-12-01 |
| CN113707638A (en) | 2021-11-26 |
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