TWI625991B - Circuit board structure and method for forming the same - Google Patents
Circuit board structure and method for forming the same Download PDFInfo
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- TWI625991B TWI625991B TW105133395A TW105133395A TWI625991B TW I625991 B TWI625991 B TW I625991B TW 105133395 A TW105133395 A TW 105133395A TW 105133395 A TW105133395 A TW 105133395A TW I625991 B TWI625991 B TW I625991B
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- circuit
- circuit board
- board structure
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- 238000000034 method Methods 0.000 title claims description 82
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 238000004519 manufacturing process Methods 0.000 claims abstract description 17
- 239000004020 conductor Substances 0.000 claims description 37
- 238000007788 roughening Methods 0.000 claims description 20
- 229920002120 photoresistant polymer Polymers 0.000 claims description 13
- 238000005553 drilling Methods 0.000 claims description 10
- 230000003746 surface roughness Effects 0.000 claims description 7
- 230000002093 peripheral effect Effects 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 135
- 239000010949 copper Substances 0.000 description 14
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 12
- 239000000463 material Substances 0.000 description 12
- 238000005530 etching Methods 0.000 description 11
- 238000007747 plating Methods 0.000 description 8
- 238000000151 deposition Methods 0.000 description 7
- 230000008021 deposition Effects 0.000 description 7
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 229920005989 resin Polymers 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 239000004721 Polyphenylene oxide Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229920006380 polyphenylene oxide Polymers 0.000 description 2
- -1 polytetrafluoroethylene Polymers 0.000 description 2
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 2
- 239000004810 polytetrafluoroethylene Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- XQUPVDVFXZDTLT-UHFFFAOYSA-N 1-[4-[[4-(2,5-dioxopyrrol-1-yl)phenyl]methyl]phenyl]pyrrole-2,5-dione Chemical compound O=C1C=CC(=O)N1C(C=C1)=CC=C1CC1=CC=C(N2C(C=CC2=O)=O)C=C1 XQUPVDVFXZDTLT-UHFFFAOYSA-N 0.000 description 1
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000011162 core material Substances 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- 229920003192 poly(bis maleimide) Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000002893 slag Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910019655 synthetic inorganic crystalline material Inorganic materials 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/11—Printed elements for providing electric connections to or between printed circuits
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/09—Shape and layout
- H05K2201/09209—Shape and layout details of conductors
- H05K2201/09654—Shape and layout details of conductors covering at least two types of conductors provided for in H05K2201/09218 - H05K2201/095
- H05K2201/09672—Superposed layout, i.e. in different planes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Manufacturing Of Printed Wiring (AREA)
Abstract
本發明提供一種電路板結構與其製造方法。電路板結構包括:一基板;一介電層,形成於該基板之上;一第一線路層,形成於該介電層之中,其中該第一線路層具有一上寬下窄的結構;一導電襯層,形成於該第一線路層之上;以及一第二線路層,形成於該導電襯層之上,其中該第二線路層藉由該導電襯層電性連接至該第一線路層。 The invention provides a circuit board structure and a manufacturing method thereof. The circuit board structure includes: a substrate; a dielectric layer formed on the substrate; a first circuit layer formed in the dielectric layer, wherein the first circuit layer has a structure with a wide width and a narrow width; A conductive lining layer is formed on the first circuit layer; and a second circuit layer is formed on the conductive lining layer, wherein the second circuit layer is electrically connected to the first wiring layer through the conductive lining layer. Line layer.
Description
本發明係有關於一種電路板結構,且特別有關於一種具有導電結構之電路板結構。 The present invention relates to a circuit board structure, and more particularly, to a circuit board structure having a conductive structure.
在新一代的電子產品中,不斷地追求輕薄短小,使得積體電路(Intergrated Circuit,IC)朝高密度發展,因此,印刷電路板(Printed Circuit Board,PCB)也隨之對應進行微小化設計,使電性連接線路的配置更加地密集化。 In the new generation of electronic products, the continuous pursuit of lightness, thinness and shortness has led to the development of integrated circuits (ICs) towards high density. Therefore, printed circuit boards (PCBs) have also been designed to be miniaturized accordingly. Make the configuration of electrical connection lines more dense.
目前製作印刷電路板之技術上主要由多層圖案化導電層(patterned conductive layer)及多層介電層(dielectric layer)所交替疊合而成,並利用內部線路結構達成電性連接。而目前高密度佈線之電路板大多以增層法(build up)來進行製作。 At present, the technology of manufacturing printed circuit boards is mainly composed of a plurality of patterned conductive layers and a plurality of dielectric layers alternately stacked, and the internal circuit structure is used to achieve electrical connection. At present, most high-density wiring circuit boards are manufactured by a build-up method.
內部線路結構可包括導電連接結構與內部線路層,其中內部線路層電性連接導電連接結構,而導電連接結構例如是導電通孔結構(conductive through hole structure)或導電埋孔結構(conductive buried hole structure)或導電盲孔結構(conductive blind hole structure)。在製作導電連接結構時,可能需要先對導電材料進行粗化製程處理,但是粗化製程可能導致導電材料被過度移除,而無法達到良好的電件連接效果,因 此,業界亟需對基板之導電連接結構加以改良。 The internal circuit structure may include a conductive connection structure and an internal circuit layer. The internal circuit layer is electrically connected to the conductive connection structure, and the conductive connection structure is, for example, a conductive through hole structure or a conductive buried hole structure. ) Or conductive blind hole structure. When making a conductive connection structure, a roughening process may be performed on the conductive material first, but the roughening process may cause the conductive material to be excessively removed, and a good electrical component connection effect cannot be achieved, because Therefore, the industry urgently needs to improve the conductive connection structure of the substrate.
本發明提供一種電路板結構,包括:一基板;一介電層,形成於該基板之上;一第一線路層,形成於該介電層之中,其中該第一線路層具有一上寬下窄的結構;一導電襯層,形成於該第一線路層之上;以及一第二線路層,形成於該導電襯層之上,其中該第二線路層藉由該導電襯層電性連接至該第一線路層。 The invention provides a circuit board structure including: a substrate; a dielectric layer formed on the substrate; a first circuit layer formed in the dielectric layer, wherein the first circuit layer has an upper width A lower narrow structure; a conductive lining layer formed on the first circuit layer; and a second circuit layer formed on the conductive lining layer, wherein the second circuit layer is electrically conductive through the conductive lining layer Connected to this first line layer.
本發明亦提供一種電路板結構之製造方法,包括以下步驟:提供一基板;形成一介電層於該基板之上;移除該介電層之一部份,以於該介電層之中形成一溝槽;填充一導電材料於該溝槽之中與之上;移除該導電材料之一部份,以露出該溝槽之上部分並形成一第一線路層;形成一導電襯層於該溝槽之中與該介電層之上;以及形成一第二線路層於該導電襯層之上。 The invention also provides a method for manufacturing a circuit board structure, which includes the following steps: providing a substrate; forming a dielectric layer on the substrate; removing a portion of the dielectric layer to be in the dielectric layer Forming a trench; filling a conductive material in and above the trench; removing a portion of the conductive material to expose a portion above the trench and forming a first circuit layer; forming a conductive liner In the trench and on the dielectric layer; and forming a second circuit layer on the conductive liner layer.
10‧‧‧中心區 10‧‧‧ Central District
20‧‧‧周邊區 20‧‧‧Peripheral area
12‧‧‧導電圖案疏離區 12‧‧‧ conductive pattern alienation area
14‧‧‧導電圖案密集區 14‧‧‧ conductive pattern dense area
102‧‧‧基板 102‧‧‧ substrate
104、104’‧‧‧導電層 104、104’‧‧‧conductive layer
106‧‧‧介電層 106‧‧‧ Dielectric layer
107‧‧‧溝槽 107‧‧‧Trench
107a‧‧‧溝槽之上部份 107a‧‧‧ above the trench
108‧‧‧導電材料 108‧‧‧ conductive material
110‧‧‧第一線路層 110‧‧‧First circuit layer
120‧‧‧導電襯層 120‧‧‧ conductive liner
122‧‧‧光阻 122‧‧‧Photoresist
130‧‧‧第二線路層 130‧‧‧Second circuit layer
140‧‧‧導通孔 140‧‧‧via
W1‧‧‧頂面寬度 W 1 ‧‧‧Top width
W2‧‧‧底面寬度 W 2 ‧‧‧ bottom width
D1‧‧‧第一深度 D 1 ‧‧‧ first depth
D2‧‧‧第二深度 D 2 ‧‧‧Second Depth
H1‧‧‧高度 H 1 ‧‧‧ height
T1‧‧‧第一厚度 T 1 ‧‧‧ first thickness
T2‧‧‧第二厚度 T 2 ‧‧‧ second thickness
根據以下的詳細說明並配合所附圖式做完整揭露。應注意的是,根據本產業的一般作業,圖式並未必按照比例繪製。事實上,可能任意的放大或縮小元件的尺寸,以做清楚的說明。 Complete disclosure according to the following detailed description and accompanying drawings. It should be noted that, according to the general operations of the industry, the drawings are not necessarily drawn to scale. In fact, the size of the element may be arbitrarily enlarged or reduced for clarity.
第1A-1J圖顯示依據本發明之一些實施例之形成電路板結構於各個製程階段之剖面圖。 Figures 1A-1J show cross-sectional views of forming a circuit board structure at various process stages according to some embodiments of the present invention.
第2A圖顯示依據本發明之一些實施例之電路板結構之俯視圖。 FIG. 2A shows a top view of a circuit board structure according to some embodiments of the present invention.
第2B圖顯示依據本發明之一些實施例之電路板結構之俯視圖。 FIG. 2B is a top view of a circuit board structure according to some embodiments of the present invention.
以下的發明內容提供許多不同的實施例或範例以實施本案的不同特徵。以下的發明內容敘述各個構件及其排列方式的特定範例,以簡化說明。當然,這些特定的範例並非用以限定。例如,若是本發明書敘述了一第一特徵形成於一第二特徵之上或上方,即表示其可能包含上述第一特徵與上述第二特徵是直接接觸的實施例,亦可能包含了有附加特徵形成於上述第一特徵與上述第二特徵之間,而使上述第一特徵與第二特徵可能未直接接觸的實施例。另外,以下發明書不同範例可能重複使用相同的參考符號及/或標記。這些重複係為了簡化與清晰的目的,並非用以限定所討論的不同實施例及/或結構之間有特定的關係。 The following summary provides many different embodiments or examples to implement different features of the present application. The following summary describes specific examples of each component and its arrangement to simplify the description. Of course, these specific examples are not intended to be limiting. For example, if the present invention describes that a first feature is formed on or above a second feature, it means that it may include an embodiment where the first feature is in direct contact with the second feature, or it may include additional The feature is an embodiment in which the feature is formed between the first feature and the second feature, and the first feature and the second feature may not be in direct contact. In addition, the same reference symbols and / or marks may be repeatedly used in different examples of the following invention. These repetitions are for simplicity and clarity, and are not intended to limit the specific relationship between the different embodiments and / or structures discussed.
下文描述實施例的各種變化。藉由各種視圖與所繪示之實施例,類似的元件標號用於標示類似的元件。應可理解的是,額外的操作步驟可實施於所述方法之前、之間或之後,且在所述方法的其他實施例中,可以取代或省略部分的操作步驟。 Various variations of the embodiments are described below. Through various views and illustrated embodiments, similar component numbers are used to identify similar components. It should be understood that the additional operation steps may be implemented before, during or after the method, and in other embodiments of the method, part of the operation steps may be replaced or omitted.
本發明提供電路板結構與其製造方法之各種實施例。第1A-1J圖顯示依據本發明之一些實施例之形成電路板結構於各個製程階段之剖面圖。第2A圖顯示依據本發明之一些實施例之電路板結構之俯視圖。第1A圖為沿著第2A圖之AA’剖線而得之剖面圖。此處須注意的是,該些圖式均為簡化之示意 圖,以強調本發明之特徵,因此圖中之元件尺寸並非完全依實際比例繪製。且本發明之實施例也可能包含圖中未顯示之元件。 The present invention provides various embodiments of a circuit board structure and a manufacturing method thereof. Figures 1A-1J show cross-sectional views of forming a circuit board structure at various process stages according to some embodiments of the present invention. FIG. 2A shows a top view of a circuit board structure according to some embodiments of the present invention. Fig. 1A is a sectional view taken along the line AA 'in Fig. 2A. It should be noted here that these diagrams are simplified illustrations The drawings emphasize the features of the present invention, so the dimensions of the components in the drawings are not drawn according to actual scale. Moreover, the embodiments of the present invention may also include elements not shown in the figure.
請參見第1A圖與第2A圖,提供基板102,基板102包括中心區10與周邊區20。中心區10為主要線路分佈區,而周邊區並未設置任何電路。中心區10包括導電圖案疏離區12與導電圖案密集區14,導電層104形成於基板102之上且位於導電圖案疏離區12,而導電層104’形成於基板102之上且位於導電圖案密集區14。在導電圖案疏離區12之導電層104之數量少於在導電圖案密集區14之導電層104’的數量。亦即,導電圖案疏離區12之導電層104之密度小於在導電圖案密集區14之導電層104’的密度。當兩個區域的導電圖案密度不同時,當後續進行電鍍過程時,由於不同區域圖案密度會造成電流密度不同,將導致不同區域的導電材料厚度不均勻,進而影響線路結構之品質。 Referring to FIGS. 1A and 2A, a substrate 102 is provided. The substrate 102 includes a central region 10 and a peripheral region 20. The central area 10 is a main line distribution area, and the peripheral area is not provided with any circuits. The central region 10 includes a conductive pattern alienation region 12 and a conductive pattern dense region 14. A conductive layer 104 is formed on the substrate 102 and is located in the conductive pattern alienation region 12. 14. The number of the conductive layers 104 in the conductive pattern alienation region 12 is less than the number of the conductive layers 104 'in the conductive pattern dense region 14. That is, the density of the conductive layer 104 in the conductive pattern alienation region 12 is smaller than the density of the conductive layer 104 'in the conductive pattern dense region 14. When the density of the conductive patterns in the two regions is different, when the subsequent plating process is performed, the current density will be different due to the pattern density in different regions, which will cause the thickness of the conductive material in the different regions to be uneven, and then affect the quality of the circuit structure.
基板102之核心材質包括紙質酚醛樹脂(paper phenolic resin)、複合環氧樹脂(composite epoxy)、聚亞醯胺樹脂(polyimide resin)或玻璃纖維(glass fiber)雙面含浸上述材料。在一些實施例中,導電層104之材料由金屬組成,金屬例如包括銅(Cu)、鋁(Al)、鎳(Ni)、金(Cu)、上述之合金或上述之組合。 The core material of the substrate 102 includes paper phenolic resin, composite epoxy, polyimide resin, or glass fiber. In some embodiments, the material of the conductive layer 104 is composed of a metal, such as copper (Cu), aluminum (Al), nickel (Ni), gold (Cu), the alloy described above, or a combination thereof.
請參見第1B圖,形成介電層106於導電層104之上。介電層106之材料包括非感光性樹脂、環氧樹脂或光感應樹脂,而環氧樹脂例如為雙馬來亞醯胺-三氮雜苯樹脂 (bismaleimide triacine,BT)、ABF膜(ajinomoto build-up film)、聚苯醚(poly phenylene oxide,PPE)、聚四氟乙烯(polytetrafluorethylene,PTFE)或上述之組合。形成介電層106之方法包括化學氣相沉積法(chemical vapor deposition,CVD)、物理氣相沉積法(physical vapor deposition,PVD)、旋轉塗佈法(spin coating)或其他合適的製法。 Referring to FIG. 1B, a dielectric layer 106 is formed on the conductive layer 104. The material of the dielectric layer 106 includes a non-photosensitive resin, an epoxy resin, or a light-sensitive resin, and the epoxy resin is, for example, bismaleimide-triazabenzene resin. (bismaleimide triacine (BT)), ABF (ajinomoto build-up film), polyphenylene oxide (PPE), polytetrafluoroethylene (PTFE), or a combination thereof. The method of forming the dielectric layer 106 includes chemical vapor deposition (CVD), physical vapor deposition (PVD), spin coating, or other suitable manufacturing methods.
請參見第1C圖,移除介電層106之一部份,以於介電層106之中形成溝槽107,並且暴露導電層104。形成溝槽107的製法包括機械鑽孔製程(mechanical drill process)、雷射鑽孔製程(laser drill process)或其他合適的製程。形成溝槽107之目的在於後續要填充導電材料於溝槽107中,以形成導通孔140(請參見1J圖)於導電層104之上,作為電性連接。 Referring to FIG. 1C, a portion of the dielectric layer 106 is removed to form a trench 107 in the dielectric layer 106 and expose the conductive layer 104. The method for forming the trench 107 includes a mechanical drill process, a laser drill process, or other suitable processes. The purpose of forming the trench 107 is to subsequently fill the trench 107 with a conductive material to form a via hole 140 (see FIG. 1J) on the conductive layer 104 as an electrical connection.
在一些實施例中,藉由雷射鑽孔製程(laser drilling process)形成溝槽107。使用雷射鑽孔製程之優點在於鑽孔的深度較容易精準控制,且鑽孔之材料應用範圍較廣,且容易製作較小之鑽孔孔徑,因此能獲得較佳的深寬比。 In some embodiments, the trench 107 is formed by a laser drilling process. The advantages of using the laser drilling process are that the depth of the hole is easier to control accurately, and the range of materials used for drilling is wider, and it is easy to make smaller hole diameters, so a better aspect ratio can be obtained.
由於使用雷射鑽孔製程,因此溝槽107會具有上寬下窄之剖面輪廓,且具有傾斜之側壁。簡言之,溝槽107具有梯形剖面輪廓。溝槽107具有頂面寬度W1與底面寬度W2,頂面寬度W1大於底面寬度W2。溝槽107之深度定義為第一深度D1。在一些實施例中,深度(D1)比寬度(W1)之比例之範圍為約1至3。須注意的是,當溝槽107具有高深寬比時,會不利於導電材料之填充,有可能會導致填孔不完全而產生孔洞,而降低導通孔之導電性。為了避免填充高深寬比的溝槽107可能導致之缺 點,本發明於後續製程步驟中,藉由分段填充導電材料於溝槽107中,以降低填孔不完全之風險。 Because the laser drilling process is used, the trench 107 has a cross-sectional profile that is wide up and narrow, and has inclined sidewalls. In short, the groove 107 has a trapezoidal cross-sectional profile. The trench 107 has a top surface width W 1 and a bottom surface width W 2. The top surface width W 1 is larger than the bottom surface width W 2 . The depth of the trench 107 is defined as a first depth D 1 . In some embodiments, the ratio of the depth (D 1 ) to the width (W 1 ) ranges from about 1 to 3. It should be noted that when the trench 107 has a high aspect ratio, it is not conducive to the filling of the conductive material, which may cause incomplete filling of the holes and generate holes, thereby reducing the conductivity of the vias. In order to avoid the disadvantages caused by filling the trench 107 with a high aspect ratio, in the subsequent process steps of the present invention, the conductive material is filled in the trench 107 in sections to reduce the risk of incomplete hole filling.
在一些實施例中,雷射鑽孔製程所使用的雷射例如為釹釔鋁石榴石(Nd:YAG)雷射。在一些其他實施例中,雷射鑽孔製程所使用的雷射例如為二氧化碳(CO2)雷射或UV雷射。雷射鑽孔製程中施加雷射的能量與時間,可根據介電層106之材質以及所欲形成溝槽107之厚度作適當的調整。於雷射鑽孔製程之後,進行去膠渣(desmear)步驟,用以去除雷射鑽孔所產生之膠渣。 In some embodiments, the laser used in the laser drilling process is, for example, a neodymium yttrium aluminum garnet (Nd: YAG) laser. In some other embodiments, the laser used in the laser drilling process is, for example, a carbon dioxide (CO 2 ) laser or a UV laser. The energy and time of the laser applied during the laser drilling process can be appropriately adjusted according to the material of the dielectric layer 106 and the thickness of the trench 107 to be formed. After the laser drilling process, a desmear step is performed to remove the glue slag generated by the laser drilling.
請參見第1D圖,填充導電材料108於溝槽107之中與之上。在一些實施例中,導電材料108包括銅(Cu)、鋁(Al)、鎳(Ni)、金(Cu)或上述之組合。在一些實施例中,形成導電材料108之方法為全板電鍍法(panel plating)。 Referring to FIG. 1D, a conductive material 108 is filled in and on the trench 107. In some embodiments, the conductive material 108 includes copper (Cu), aluminum (Al), nickel (Ni), gold (Cu), or a combination thereof. In some embodiments, the method of forming the conductive material 108 is panel plating.
請另外參見第2B圖,第2B圖顯示依據本發明之一些實施例之導電材料108之俯視圖。 Please also refer to FIG. 2B, which illustrates a top view of a conductive material 108 according to some embodiments of the present invention.
需注意的是,由於中心區10具有導電圖案疏離區12與導電圖案密集區14,若是對導電圖案疏離區12與導電圖案密集區14上的溝槽107分別進行導電材料之電鍍時,由於兩個區域之導電圖案密度不同,所產生之電流密度亦會不同,亦即電流分佈不均勻,而使整個基板(或稱為電路板)的溝槽107中之導電材料之厚度均勻性變差,將影響電路板結構的導電性。 It should be noted that, since the central region 10 has the conductive pattern alienation region 12 and the conductive pattern dense region 14, if the trench 107 on the conductive pattern alienation region 12 and the conductive pattern dense region 14 is respectively plated with conductive material, The density of the conductive pattern in each area is different, and the current density generated will be different, that is, the current distribution is uneven, which makes the thickness uniformity of the conductive material in the groove 107 of the entire substrate (or circuit board) worse. Will affect the conductivity of the circuit board structure.
為了提高導通孔內導電材料之厚度均勻性,本發明先進行全板電鍍(panel plating),之後再移除不需要的部分金屬層,先確保在基板102每個區域中的導電層104之上的第一線 路層110(請參見第1E圖)具有實質相同的厚度,來防止在後續電鍍所形成之線路層厚度大小不一的情形,因此解決了導通孔中的導電材料厚度均勻性不佳的問題。 In order to improve the thickness uniformity of the conductive material in the vias, the present invention first performs panel plating, and then removes unnecessary portions of the metal layer to ensure that it is above the conductive layer 104 in each region of the substrate 102 Front line The circuit layer 110 (see FIG. 1E) has substantially the same thickness to prevent the thickness of the circuit layer formed by subsequent plating from being different, so the problem of poor uniformity of the thickness of the conductive material in the via is solved.
在一些實施例中,藉由全板電鍍法(panel plating)形成導電材料108的過程中,導電材料108係全部沉積於基板102之所有區域,包括中心區10的導電圖案疏離區12與導電圖案密集區14,因此能提高導電材料108(或是後續形成之第一線路層110)的厚度均勻性。在全板電鍍製程之後,導電材料108之上表面大致上是平整的。 In some embodiments, in the process of forming the conductive material 108 by panel plating, the conductive material 108 is entirely deposited on all regions of the substrate 102, including the conductive pattern detached region 12 and the conductive pattern of the central region 10. The dense region 14 can improve the thickness uniformity of the conductive material 108 (or the first circuit layer 110 formed subsequently). After the full-plate electroplating process, the upper surface of the conductive material 108 is substantially flat.
請參見第1E圖,移除導電材料108之一部份,以露出溝槽107之上部份107a並形成第一線路層110。如此一來,第一線路層110電性連接至導電層104且直接接觸導電層104。在一些實施例中,藉由蝕刻製程(etching process),例如濕式蝕刻製程,移除導電材料108之一部份。在一些實施例中,移除導電材料108之一部份之步驟亦可稱為回蝕刻製程(etching back process)。 Referring to FIG. 1E, a portion of the conductive material 108 is removed to expose a portion 107 a above the trench 107 and form a first circuit layer 110. As such, the first circuit layer 110 is electrically connected to the conductive layer 104 and directly contacts the conductive layer 104. In some embodiments, a portion of the conductive material 108 is removed by an etching process, such as a wet etching process. In some embodiments, the step of removing a portion of the conductive material 108 may also be referred to as an etching back process.
如第1E圖所示,溝槽107之上部份107a的深度定義為第二深度D2。若第二深度D2太小時,將不利於後續導電襯層120以及第二線路層130(如第1I圖所示)之沉積,亦即蝕刻液不易填充到第二深度D2中,而導致後續材料無法填滿第二深度D2,此外有可能導電材料108仍留在介電層106之上,如此將影響後續導電襯層120之沉積,因此,蝕刻製程至少須將位於介電層106之上的導電材料108完全移除。若第二深度D2太大時,亦即第一線路層110之材料厚度太薄,由於後續會進行粗化製 程(如第1G圖所示),粗化製程有可能過度移除導電襯層120,甚至可能移除部份之第一線路層110,而產生凹洞(void)於第一線路層110與導電層104之間。 As shown in FIG. 1E, the depth of the portion 107 a above the trench 107 is defined as the second depth D 2 . If the second depth D 2 is too small, it will be detrimental to the subsequent deposition of the conductive liner layer 120 and the second circuit layer 130 (as shown in FIG. 1I), that is, the etching solution cannot be easily filled into the second depth D 2 , resulting Subsequent materials cannot fill the second depth D 2. In addition, it is possible that the conductive material 108 remains on the dielectric layer 106, which will affect the deposition of the subsequent conductive liner 120. Therefore, the etching process must at least be located on the dielectric layer 106. The conductive material 108 above is completely removed. If the second depth D 2 is too large, that is, the thickness of the material of the first circuit layer 110 is too thin, because the subsequent roughening process (as shown in FIG. 1G), the roughening process may excessively remove the conductive liner. 120, it is even possible to remove a portion of the first circuit layer 110 and create a void between the first circuit layer 110 and the conductive layer 104.
經過蝕刻製程之後,剩餘的導電材料108殘留在溝槽107之下部份,以形成第一線路層110,其中第一線路層110具有第一高度H1。在一些實施例中,第一線路層110之第一高度(H1)比溝槽107之第一深度(D1)之比例範圍為約15%至約97%。若此比例小於15%時,表示第一線路層110之厚度太薄,當後續進行粗化製程時,粗化製程有可能過度移除第一線路層110導致曝露出部份導電層104,而產生不欲形成之凹洞(void)於第一線路層110與導電層104之間。當此比例大於97%時,表示第一線路層110之厚度太厚,而有可能導電材料108仍留在介電層106之上,如此將影響後續導電襯層120之沉積,因此,蝕刻製程至少須將位於介電層106之上的導電材料108完全移除。 After the etching process, the remaining conductive material 108 remains in the lower portion of the trench 107 to form a first circuit layer 110, where the first circuit layer 110 has a first height H 1 . In some embodiments, the ratio of the first height (H 1 ) of the first circuit layer 110 to the first depth (D 1 ) of the trench 107 ranges from about 15% to about 97%. If this ratio is less than 15%, it means that the thickness of the first circuit layer 110 is too thin. When the roughening process is subsequently performed, the roughening process may excessively remove the first circuit layer 110 and cause a part of the conductive layer 104 to be exposed, and Undesirable voids are generated between the first circuit layer 110 and the conductive layer 104. When this ratio is greater than 97%, it means that the thickness of the first circuit layer 110 is too thick, and it is possible that the conductive material 108 remains on the dielectric layer 106, which will affect the subsequent deposition of the conductive liner layer 120. Therefore, the etching process At least the conductive material 108 above the dielectric layer 106 must be completely removed.
由於溝槽107具有上寬下窄之剖面結構,填入溝槽107下部分之第一線路層110同樣具有上寬下窄之剖面結構,且由於第一線路層110係藉由全板電鍍法(panel plating)所形成,因此,在不同區域(例如在導電圖案疏離區12與導電圖案密集區14)的第一線路層110之厚度一致。亦即,藉由此方法,能提高第一線路層110之厚度均勻性。 Since the trench 107 has a cross-sectional structure with a wide upper width and a narrow cross-section, the first circuit layer 110 filling the lower portion of the trench 107 also has a cross-sectional structure with a wide upper width and a narrow cross-section. (Panel plating) is formed, and therefore, the thickness of the first circuit layer 110 is the same in different regions (for example, in the conductive pattern alienation region 12 and the conductive pattern dense region 14). That is, by this method, the thickness uniformity of the first wiring layer 110 can be improved.
請參見第1F圖,形成導電襯層120於溝槽107之上部份107a之中與介電層106之上。更確切而言,導電襯層120順應性(conformally)形成於溝槽107之上部份107a之底部與側壁上,並延伸至介電層106之上,但是導電襯層120並未填滿溝槽 107之上部份107a。因此,導電襯層120直接接觸第一線路層110並且電性連接至第一線路層110。由於溝槽107具有上寬下窄剖面輪廓,因此,導電襯層120具有傾斜之側壁,導電襯層120之底部不垂直於導電襯層120之側壁。 Referring to FIG. 1F, a conductive liner 120 is formed in the upper portion 107a of the trench 107 and on the dielectric layer 106. More specifically, the conductive liner 120 is conformally formed on the bottom and sidewalls of the portion 107a above the trench 107 and extends above the dielectric layer 106, but the conductive liner 120 does not fill the trench groove Part 107a above 107. Therefore, the conductive liner 120 directly contacts the first wiring layer 110 and is electrically connected to the first wiring layer 110. Because the trench 107 has a wide cross section with a narrow upper profile, the conductive liner 120 has inclined sidewalls, and the bottom of the conductive liner 120 is not perpendicular to the sidewall of the conductive liner 120.
形成導電襯層120之目的在於作為後續形成之第二線路層130之晶種層(seed layer),以利後續第二線路層130(請參見第1I圖)之形成。 The purpose of forming the conductive liner layer 120 is to serve as a seed layer of the second circuit layer 130 to be formed later, so as to facilitate the formation of the subsequent second circuit layer 130 (see FIG. 1I).
在一些實施例中,導電襯層120之材料包括銅(Cu)、鋁(Al)、鎳(Ni)、金(Cu)、鈀(Pd)或上述之組合。在一些實施例中,形成導電襯層120之方法為化學鍍法。在一些實施例中,導電襯層120由鈀(Pd)所組成,第一線路層110由銅(Cu)所組成,由於導電襯層120之材料不同於第一線路層110之材料,因此,兩個材料之間具有明顯的介面。 In some embodiments, the material of the conductive liner 120 includes copper (Cu), aluminum (Al), nickel (Ni), gold (Cu), palladium (Pd), or a combination thereof. In some embodiments, the method for forming the conductive liner 120 is an electroless plating method. In some embodiments, the conductive liner layer 120 is composed of palladium (Pd), and the first circuit layer 110 is composed of copper (Cu). Since the material of the conductive liner layer 120 is different from that of the first circuit layer 110, There is a clear interface between the two materials.
由於導電襯層120係順應性地沉積於溝槽107之中,因此,沉積於溝槽107底部的導電襯層120之第一厚度T1會小於沉積於介電層106之上的導電襯層120之第二厚度T2。特別是溝槽107之深度較深時,位於溝槽107底部的導電襯層120之第一厚度T1與沉積於介電層106之上的導電襯層120之第二厚度T2差異會更加地明顯。再者,導電襯層120之沉積厚度相較於整個溝槽107之第一深度D1而言,是相對較薄的,因此,當後續進行粗化製程時(請參見第1G圖),導電襯層120容易被移除而無法作為晶種層或產生不欲形成之凹洞(void),凹洞會影響後續的導電性。在一些實施例中,導電襯層120之第一厚度T1之範圍為約0.1μm至約5μm。在一些實施例中,第一厚度T1 小於第二厚度T2,且第一厚度T1與第二厚度T2之差值為約0.01μm至約4μm。 Since the conductive liner 120 is compliantly deposited in the trench 107, the first thickness T 1 of the conductive liner 120 deposited on the bottom of the trench 107 will be smaller than that of the conductive liner deposited on the dielectric layer 106. The second thickness T 2 of 120. Especially when the depth of the trench 107 is deeper, the difference between the first thickness T 1 of the conductive liner 120 at the bottom of the trench 107 and the second thickness T 2 of the conductive liner 120 deposited on the dielectric layer 106 will be even greater. To obviously. Moreover, the deposition thickness of the conductive liner 120 is relatively thin compared to the first depth D 1 of the entire trench 107. Therefore, when the roughening process is subsequently performed (see FIG. 1G), the conductive The liner layer 120 is easily removed and cannot be used as a seed layer or generates voids that are not intended to be formed. The voids may affect subsequent conductivity. In some embodiments, the first thickness T 1 of the conductive liner 120 ranges from about 0.1 μm to about 5 μm. In some embodiments, the first thickness T 1 is smaller than the second thickness T 2 , and the difference between the first thickness T 1 and the second thickness T 2 is about 0.01 μm to about 4 μm.
請參見第1G圖,粗化導電襯層120,以使導電襯層120具有粗化表面120a。亦即,對導電襯層120進行表面粗化製程處理,以提高導電襯層120之上表面之粗糙度。粗化製程的目的在於使導電襯層120之表面粗糙,以提高後續形成之光阻122(如第1H圖)與導電襯層120之間的黏著力。 Referring to FIG. 1G, the conductive liner 120 is roughened so that the conductive liner 120 has a roughened surface 120a. That is, the surface roughening process is performed on the conductive liner 120 to improve the roughness of the upper surface of the conductive liner 120. The purpose of the roughening process is to roughen the surface of the conductive liner 120 to improve the adhesion between the photoresist 122 (see FIG. 1H) and the conductive liner 120 formed later.
在一實施例中,粗化表面120a具有表面粗糙度(Ra)為約0.01微米(μm)至約0.6微米(μm)。當粗化表面120a之表面粗糙度(Ra)介於上述範圍時,才能有效提高光阻122(如第1H圖)與導電襯層120之間的黏著力。當表面粗糙度低於0.1微米(μm)時,光阻122(如第1H圖)與導電襯層120之間的黏著力太低,可能會導致光阻122剝落或剝離,而無法在想定義的區域形成第二線路層130。當表面粗糙度高於0.4微米(μm)時,可能不利於後續第二線路層130之沉積。 In one embodiment, the roughened surface 120a has a surface roughness (Ra) of about 0.01 micrometer (μm) to about 0.6 micrometer (μm). When the surface roughness (Ra) of the roughened surface 120a is within the above range, the adhesion between the photoresist 122 (as shown in FIG. 1H) and the conductive liner 120 can be effectively improved. When the surface roughness is less than 0.1 micrometer (μm), the adhesion between the photoresist 122 (as shown in FIG. 1H) and the conductive liner 120 is too low, which may cause the photoresist 122 to peel or peel off, and it is impossible to define Area forms a second wiring layer 130. When the surface roughness is higher than 0.4 micrometer (μm), it may be disadvantageous for subsequent deposition of the second circuit layer 130.
在一些實施例中,藉由蝕刻製程對導電襯層120進行表面粗化製程處理,以使導電襯層120之上表面具有一定之粗糙度。在一些實施例中,對導電襯層120進行濕式蝕刻(蝕刻液)製程,讓導電襯層120具有粗化表面120a。進行粗化製程處理時,可依據不同的導電襯層120之材質選擇合適的粗化方式,只要能使導電襯層120之表面達到一定範圍之表面粗糙度即可。 In some embodiments, the conductive liner 120 is subjected to a surface roughening process by an etching process, so that the upper surface of the conductive liner 120 has a certain roughness. In some embodiments, the conductive liner 120 is subjected to a wet etching (etching solution) process, so that the conductive liner 120 has a roughened surface 120a. When the roughening process is performed, a suitable roughening method may be selected according to different materials of the conductive liner 120 as long as the surface of the conductive liner 120 can reach a certain range of surface roughness.
須注意的是,若是沒有預先形成第一線路層110時,直接將導電襯層120直接形成於溝槽107中,當進行粗化製 程時,由於粗化製程會移除部分的導電襯層120,特別是位於溝槽107底部之導電襯層120之沉積厚度較薄,導電襯層120可能被粗化製程完全移除,而形成凹洞(void),進而無法達到良好的電性接觸。 It should be noted that if the first circuit layer 110 is not formed in advance, the conductive liner layer 120 is directly formed in the trench 107 directly. During the roughening process, part of the conductive liner 120 may be removed by the roughening process, especially the thickness of the conductive liner 120 located at the bottom of the trench 107 is relatively thin. The conductive liner 120 may be completely removed by the roughening process and formed. Voids, which makes it impossible to achieve good electrical contact.
請參見第1H圖,形成圖案化之光阻122於粗化表面120a之一部份之上,以暴露粗化表面120a之其他部份。藉由影像轉移製程以形成圖案化之光阻122。影像轉移製程包括微影製程以及蝕刻製程。微影製程包含光阻塗佈(例如,自旋塗佈)、軟烤、遮罩對準、曝光、曝光後烤、光阻顯影、清洗及乾燥(例如,硬烤)。蝕刻製程例如,乾蝕刻製程、濕蝕刻製程、電漿蝕刻製程、反應性離子蝕刻製程或其他合適的製程。 Referring to FIG. 1H, a patterned photoresist 122 is formed on a portion of the roughened surface 120a to expose other portions of the roughened surface 120a. A patterned photoresist 122 is formed by an image transfer process. The image transfer process includes a lithography process and an etching process. Lithography processes include photoresist coating (eg, spin coating), soft baking, mask alignment, exposure, post-exposure baking, photoresist development, cleaning, and drying (eg, hard baking). The etching process is, for example, a dry etching process, a wet etching process, a plasma etching process, a reactive ion etching process, or other suitable processes.
需注意的是,本發明藉由預先形成具有粗化表面120a之導電襯層120,以提高光阻122與導電襯層120之間的黏著性,以進一步提高圖案化製程之準確度。若未形成粗化表面,光阻122容易剝離,將無法正確定位第二線路層130之位置,而降低線路佈局之準確性,進而降低電路板之良率(yield)。 It should be noted that, in the present invention, the conductive liner 120 having a roughened surface 120a is formed in advance to improve the adhesion between the photoresist 122 and the conductive liner 120, so as to further improve the accuracy of the patterning process. If the roughened surface is not formed, the photoresist 122 is easily peeled off, and the position of the second circuit layer 130 cannot be correctly positioned, which reduces the accuracy of the circuit layout and further reduces the yield of the circuit board.
請參見第1I圖,形成第二線路層130於暴露的粗化表面120a之上。第二線路層130藉由導電襯層120電性連接至第一線路層110。 Referring to FIG. 11, a second circuit layer 130 is formed on the exposed roughened surface 120 a. The second circuit layer 130 is electrically connected to the first circuit layer 110 through the conductive liner layer 120.
第二線路層130之材料可以與第一線路層110之材料相同或不同。在一些實施例中,第二線路層130之材料包括銅(Cu)、鋁(Al)、鎳(Ni)、金(Cu)或上述之組合。在一些實施例中,可藉由電鍍製程形成第二線路層130。 The material of the second circuit layer 130 may be the same as or different from that of the first circuit layer 110. In some embodiments, the material of the second circuit layer 130 includes copper (Cu), aluminum (Al), nickel (Ni), gold (Cu), or a combination thereof. In some embodiments, the second circuit layer 130 may be formed by a plating process.
須注意的是,因為已經在溝槽107中預先形成第一 線路層110,溝槽107之下部份已經被部份填滿,當後續欲形成第二線路層130時,所需要填充溝槽107之深度已經降低,亦即,填溝深度已經減少,因而降低後續沉積第二線路層130至溝槽107中之難度。特別是製作高深寬比(aspect ratio)之導通孔結構時,由於能預先形成第一線路層110於溝槽107之中,後續再依序填充導電襯層120與第二線路層130,因此,能更有效地降低第二線路層130之填溝難度,以提升整體製程之良率。 It should be noted that because the first The circuit layer 110 and the portion under the trench 107 have been partially filled. When the second circuit layer 130 is to be formed subsequently, the depth required to fill the trench 107 has been reduced, that is, the depth of the trench filling has been reduced. The difficulty of subsequent deposition of the second circuit layer 130 to the trench 107 is reduced. Especially when making a via structure with a high aspect ratio, since the first circuit layer 110 can be formed in the trench 107 in advance, and the conductive liner layer 120 and the second circuit layer 130 can be filled in sequence subsequently, therefore, It can more effectively reduce the difficulty of trench filling of the second circuit layer 130 to improve the yield of the overall process.
請參見第1J圖,移除光阻122,以得到導通孔140之結構,導通孔140由第一線路層110、導電襯層120與第二線路層130所組成,其中導電襯層120介於第一線路層110與第二線路層130之間,且導電襯層120圍繞一部份之第二線路層130。導電襯層120具有粗糙表面120a,且此粗糙表面120a直接接觸第二線路層130。第二線路層130之下表面寬於第一線路層110之下表面。 Referring to FIG. 1J, the photoresist 122 is removed to obtain the structure of the vias 140. The vias 140 are composed of the first circuit layer 110, the conductive liner layer 120, and the second circuit layer 130. The conductive liner layer 120 is between Between the first circuit layer 110 and the second circuit layer 130, and a conductive liner 120 surrounds a part of the second circuit layer 130. The conductive backing layer 120 has a rough surface 120 a, and the rough surface 120 a directly contacts the second circuit layer 130. The lower surface of the second circuit layer 130 is wider than the lower surface of the first circuit layer 110.
本發明藉由三階段的沉積步驟,依序填充第一線路層110、導電襯層120與第二線路層130於溝槽107中,以使電路板結構中具有導通孔140。首先,如第1D圖中,先對整個基板102(或稱電路板)進行全板電鍍製程,以在溝槽107中形成第一線路層110,以提高基板102所有區域之第一線路層110厚度之均勻性。再者,如第1F圖所示,填充導電襯層120作為晶種層,導電襯層120係直接形成於第一線路層110之上,當後續進行粗化製程之前,由於以第一線路層110當作保護層,以避免粗化製程過度移除導電襯層120,而造成凹洞(Void)等問題。最後,如第1J圖所示,在形成第二線路層130於溝槽107之上部份 之中,本發明藉由分段形成線路結構,以解決線路結構在不同區域厚度不均勻的問題,並避免粗化製程過度移除導電襯層120而導致的凹洞問題。 The present invention sequentially fills the first circuit layer 110, the conductive liner layer 120, and the second circuit layer 130 in the trench 107 through a three-stage deposition step, so that the circuit board structure has a via hole 140. First, as shown in FIG. 1D, the entire substrate 102 (or circuit board) is firstly subjected to a full-plate electroplating process to form a first circuit layer 110 in the trench 107 to improve the first circuit layer 110 in all regions of the substrate 102. Uniformity of thickness. Furthermore, as shown in FIG. 1F, the conductive liner layer 120 is filled as a seed layer, and the conductive liner layer 120 is directly formed on the first circuit layer 110. Before the subsequent roughening process, since the first circuit layer is used, 110 is used as a protective layer to avoid excessive removal of the conductive liner 120 during the roughening process, which causes problems such as pits. Finally, as shown in FIG. 1J, a portion of the second circuit layer 130 over the trench 107 is formed. Among other things, the present invention forms a circuit structure by segmenting to solve the problem of uneven thickness of the circuit structure in different regions, and avoids the problem of pits caused by the excessive removal of the conductive liner 120 during the roughening process.
綜上所述,本發明提供一種電路板結構與其製造方法。電路板結構包括一上寬下窄的導通孔140,製程步驟中在溝槽107內分段填充導電材料,先利用全板電鍍法形成一定厚度比例之第一線路層110,再順應性地形成導電襯層120,最後在具有粗化表面120a的導電襯層120之上形成第二線路層130。本發明電路板結構之優點在於,不但可以提高整個基板之線路圖案之導電層厚度之均勻性,又可以避免粗化製程過度蝕刻導電襯層,且因為分段填充導電材料,降低填充溝槽不完全之風險,因此,增進導通孔之導電能力,並提高電路板結構之良率。 In summary, the present invention provides a circuit board structure and a manufacturing method thereof. The circuit board structure includes a via hole 140 which is wide at the top and narrow at the bottom. The conductive material is filled in the trench 107 in sections during the manufacturing process. First, a first circuit layer 110 having a certain thickness ratio is formed by the full-plate plating method, and then conformally formed. The conductive backing layer 120 is finally formed on the conductive backing layer 120 having the roughened surface 120a. The advantages of the circuit board structure of the present invention are that it can not only improve the uniformity of the thickness of the conductive layer of the circuit pattern of the entire substrate, but also avoid the roughening process from excessively etching the conductive liner, and because the conductive material is filled in sections, the filling trench can be reduced. Complete risk, therefore, improving the conductive ability of the vias and improving the yield of the circuit board structure.
前述內文概述了許多實施例的特徵,使本技術領域中具有通常知識者可以從各個方面更佳地了解本發明。本技術領域中具有通常知識者應可理解,且可輕易地以本發明為基礎來設計或修飾其他製程及結構,並以此達到相同的目的及/或達到與在此介紹的實施例等相同之優點。本技術領域中具有通常知識者也應了解這些相等的結構並未背離本發明的發明精神與範圍。在不背離本發明的發明精神與範圍之前提下,可對本發明進行各種改變、置換或修改。 The foregoing text summarizes the features of many embodiments so that those having ordinary skill in the art can better understand the present invention from various aspects. Those with ordinary knowledge in the technical field should understand that other processes and structures can be easily designed or modified based on the present invention, so as to achieve the same purpose and / or achieve the same as the embodiments and the like described herein. Advantages. Those skilled in the art should also understand that these equivalent structures do not depart from the spirit and scope of the invention. Without departing from the spirit and scope of the invention, various changes, substitutions, or modifications can be made to the invention.
雖然本發明已以數個較佳實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明之精神和範圍內,當可作任意之更動與潤飾, 因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。 Although the present invention has been disclosed above with several preferred embodiments, it is not intended to limit the present invention. Any person with ordinary knowledge in the technical field can make any changes without departing from the spirit and scope of the present invention. And retouching, Therefore, the protection scope of the present invention shall be determined by the scope of the appended patent application.
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