TWI698971B - Package structure - Google Patents
Package structure Download PDFInfo
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- TWI698971B TWI698971B TW106116527A TW106116527A TWI698971B TW I698971 B TWI698971 B TW I698971B TW 106116527 A TW106116527 A TW 106116527A TW 106116527 A TW106116527 A TW 106116527A TW I698971 B TWI698971 B TW I698971B
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- layer
- package
- patterned conductive
- metal substrate
- conductive layer
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- 239000000758 substrate Substances 0.000 claims abstract description 54
- 239000002184 metal Substances 0.000 claims abstract description 51
- 229910052751 metal Inorganic materials 0.000 claims abstract description 51
- 239000010410 layer Substances 0.000 claims description 144
- 238000004806 packaging method and process Methods 0.000 claims description 37
- 229910000679 solder Inorganic materials 0.000 claims description 22
- 239000012790 adhesive layer Substances 0.000 claims description 17
- 239000002335 surface treatment layer Substances 0.000 claims description 11
- 239000003292 glue Substances 0.000 claims description 10
- 150000001875 compounds Chemical class 0.000 claims description 7
- 239000008393 encapsulating agent Substances 0.000 claims description 3
- 230000000149 penetrating effect Effects 0.000 claims 1
- 230000002093 peripheral effect Effects 0.000 claims 1
- 230000017525 heat dissipation Effects 0.000 description 6
- 238000009413 insulation Methods 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000000084 colloidal system Substances 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
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- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Description
本發明是有關於一種封裝結構,且特別是有關於一種可內埋封裝元件的封裝結構。The present invention relates to a packaging structure, and more particularly to a packaging structure that can embed packaging components.
當考慮電子裝置或封裝結構的整體厚度時,則需要探討內埋元件的構裝方式。藉由元件的內埋化,可使封裝體積大幅度縮小,能放入更多高功能性元件,以增加基板表面之佈局面積,以達到電子產品薄型化之目的。一般而言,在習知使用內埋式元件的封裝技術中,需先在基板上形成一容置槽,以將元件配置於基板的容置槽內。之後,再進行填充絕緣膠體的步驟,以使元件內埋於基板中。然而,內埋元件往往會面臨到散熱不佳的問題,進而影響電子裝置或封裝結構整體的散熱性能。When considering the overall thickness of the electronic device or packaging structure, it is necessary to discuss the packaging method of the embedded component. By embedding the components, the package volume can be greatly reduced, and more high-functional components can be put in to increase the layout area of the substrate surface to achieve the goal of thinning the electronic product. Generally speaking, in the conventional packaging technology using embedded components, it is necessary to first form an accommodating groove on the substrate so that the components are arranged in the accommodating groove of the substrate. After that, the step of filling the insulating colloid is performed to make the component buried in the substrate. However, the embedded components often face the problem of poor heat dissipation, which further affects the overall heat dissipation performance of the electronic device or the package structure.
本發明提供一種封裝結構,其可內埋封裝元件,具有縮減封裝高度的功效。The invention provides a packaging structure, which can embed packaging components and has the effect of reducing the packaging height.
本發明的一種封裝結構,包括一金屬基板、一核心結構層及一封裝元件。核心結構層配置於金屬基板上,且具有一開口以及一圖案化導電層,封裝元件配置於金屬基板上,且位於核心結構層的開口中。其中封裝元件包括多個外引腳,而外引腳與核心結構層的圖案化導電層電性連接,且每一外引腳的一外表面切齊於圖案化導電層的一上表面。A packaging structure of the present invention includes a metal substrate, a core structure layer and a packaging element. The core structure layer is disposed on the metal substrate and has an opening and a patterned conductive layer. The packaging element is disposed on the metal substrate and is located in the opening of the core structure layer. The package component includes a plurality of external pins, and the external pins are electrically connected to the patterned conductive layer of the core structure layer, and an outer surface of each external pin is aligned with an upper surface of the patterned conductive layer.
在本發明的一實施例中,上述的金屬基板具有一配置表面與一凹槽,核心結構層配置於配置表面上,而封裝元件配置於凹槽內,且配置表面與凹槽的一底面具有一高度差。In an embodiment of the present invention, the above-mentioned metal substrate has a configuration surface and a groove, the core structure layer is disposed on the configuration surface, and the package component is disposed in the groove, and the configuration surface and a bottom surface of the groove have A height difference.
在本發明的一實施例中,上述的凹槽的底面為一粗糙表面。In an embodiment of the present invention, the bottom surface of the aforementioned groove is a rough surface.
在本發明的一實施例中,上述的金屬基板具有一配置表面,而核心結構層與封裝元件配置於配置表面上。In an embodiment of the present invention, the aforementioned metal substrate has a configuration surface, and the core structure layer and the packaging components are disposed on the configuration surface.
在本發明的一實施例中,上述的核心結構層包括一介電層,介電層位於圖案化導電層與金屬基板之間。In an embodiment of the present invention, the aforementioned core structure layer includes a dielectric layer located between the patterned conductive layer and the metal substrate.
在本發明的一實施例中,上述的封裝元件更包括一晶片、一封裝膠體。晶片具有多個接墊。封裝膠體包覆晶片且暴露出每一接墊的一表面,其中外引腳配置於封裝膠體上且分別連接至每一接墊的表面。In an embodiment of the present invention, the above-mentioned packaging component further includes a chip and a packaging compound. The chip has multiple pads. The packaging glue covers the chip and exposes a surface of each pad, wherein the outer pins are arranged on the packaging glue and are respectively connected to the surface of each pad.
在本發明的一實施例中,上述的封裝元件更包括一晶片座、一晶片、一封裝膠體以及多條導線。晶片配置於晶片座上。封裝膠體包覆晶片及晶片座,其中外引腳配置於封裝膠體上,且導線電性連接於晶片與些外引腳之間。In an embodiment of the present invention, the above-mentioned package component further includes a chip holder, a chip, a package compound, and a plurality of wires. The chip is arranged on the chip holder. The package glue covers the chip and the chip holder, wherein the external pins are arranged on the package glue, and the wires are electrically connected between the chip and the external pins.
在本發明的一實施例中,上述的外引腳透過多條導線與核心結構層的圖案化導電層電性連接。In an embodiment of the present invention, the aforementioned external pins are electrically connected to the patterned conductive layer of the core structure layer through a plurality of wires.
在本發明的一實施例中,上述的外引腳結構性且電性連接至核心結構層的圖案化導電層。In an embodiment of the present invention, the aforementioned external pins are structurally and electrically connected to the patterned conductive layer of the core structure layer.
在本發明的一實施例中,上述的封裝結構更包括一絕緣層,填充於封裝元件與核心結構層的開口之間。In an embodiment of the present invention, the aforementioned package structure further includes an insulating layer filled between the package element and the opening of the core structure layer.
在本發明的一實施例中,上述的封裝結構更包括一黏著層,配置於核心結構層與金屬基板之間。In an embodiment of the present invention, the aforementioned package structure further includes an adhesive layer disposed between the core structure layer and the metal substrate.
在本發明的一實施例中,上述的封裝結構更包括一導熱膠層,配置於封裝元件與金屬基板之間。In an embodiment of the present invention, the aforementioned packaging structure further includes a thermally conductive adhesive layer disposed between the packaging element and the metal substrate.
在本發明的一實施例中,上述的封裝結構更包括一表面處理層,配置於圖案化導電層的上表面上與每一外引腳的外表面上。In an embodiment of the present invention, the aforementioned package structure further includes a surface treatment layer disposed on the upper surface of the patterned conductive layer and the outer surface of each external pin.
在本發明的一實施例中,上述的封裝結構更包括一防焊層,配置於核心結構層,且至少覆蓋圖案化導電層與封裝元件的外引腳。In an embodiment of the present invention, the above-mentioned package structure further includes a solder mask layer disposed on the core structure layer and at least covering the patterned conductive layer and the outer pins of the package component.
在本發明的一實施例中,上述的封裝結構更包括一電子元件及多個導電通孔。電子元件配置於防焊層上。導電通孔貫穿防焊層且暴露部分圖案化導電層,其中電子元件通過多個導電通孔而電性連接圖案化導電層。In an embodiment of the present invention, the aforementioned packaging structure further includes an electronic component and a plurality of conductive vias. The electronic components are arranged on the solder mask. The conductive through hole penetrates the solder mask layer and exposes a part of the patterned conductive layer, wherein the electronic component is electrically connected to the patterned conductive layer through a plurality of conductive through holes.
在本發明的一實施例中,上述的封裝結構更包括一防焊層以及一表面處理層。防焊層配置於核心結構層,且覆蓋圖案化導電層,其中防焊層暴露出圖案化導電層的部分上表面。表面處理層,配置於防焊層所暴露出的圖案化導電層的上表面上與每一外引腳的外表面上。In an embodiment of the present invention, the aforementioned package structure further includes a solder mask layer and a surface treatment layer. The solder mask is disposed on the core structure layer and covers the patterned conductive layer, wherein the solder mask exposes part of the upper surface of the patterned conductive layer. The surface treatment layer is arranged on the upper surface of the patterned conductive layer exposed by the solder mask and the outer surface of each external pin.
基於上述,在本發明的封裝結構的配置中,封裝元件是配置在金屬基板上且位於核心結構層的開口中。如此一來,封裝元件是內埋入核心結構層中,且封裝元件的外引腳與核心結構層的圖案化導電層呈共平面,藉此可降低封裝結構的整體封裝高度。此外,封裝元件是配置於金屬基板上,可藉由金屬基板的導熱性質來提升封裝元件的散熱效率。Based on the above, in the configuration of the package structure of the present invention, the package component is arranged on the metal substrate and located in the opening of the core structure layer. In this way, the package component is embedded in the core structure layer, and the outer pins of the package component and the patterned conductive layer of the core structure layer are coplanar, thereby reducing the overall package height of the package structure. In addition, the package component is disposed on the metal substrate, and the heat dissipation efficiency of the package component can be improved by the thermal conductivity of the metal substrate.
為讓本發明的上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。In order to make the above-mentioned features and advantages of the present invention more comprehensible, the following specific embodiments are described in detail in conjunction with the accompanying drawings.
圖1繪示為本發明的一實施例的一種封裝結構的剖面示意圖。請參考圖1,本實施例的封裝結構100A,其包括一金屬基板110、一核心結構層120及一封裝元件130。核心結構層120配置於金屬基板110上,且具有一開口122以及一圖案化導電層124。封裝元件130配置於金屬基板110上且位於核心結構層110的開口122中。封裝元件130包括多個外引腳132,且每一外引腳132電性連接至核心結構層120的圖案化導電層124。特別是,每一外引腳132的一外表面S1切齊於圖案化導電層124的一上表面S2。FIG. 1 is a schematic cross-sectional view of a package structure according to an embodiment of the invention. Please refer to FIG. 1, the
詳細而言,本實施例的金屬基板110具有一配置表面112,且核心結構層120與封裝元件130分別配置於配置表面112上。封裝元件130與核心結構層120之間具有一空氣間隙G,意即封裝元件130不接觸核心結構層120的開口122的內壁。核心結構層120更包括一介電層126,其中介電層126位於圖案化導電層124與金屬基板110之間。封裝元件130更包括一晶片134、一封裝膠體136,其中晶片134具有多個接墊1342,而封裝膠體136包覆晶片134且暴露出每一接墊1342的一表面S3。每一外引腳132配置於封裝膠體136上,且分別結構性且電性連接至每一接墊1342的表面S3,以使晶片134可透過外引腳132而電性連接至核心結構層120的圖案化導電層124。如圖1所示,本實施例的封裝元件130具體化為覆晶型態的封裝元件,且封裝元件130的外引腳132是結構性且電性連接至核心結構層120的圖案化導電層124。In detail, the
請再參考圖1,為了進一步固定封裝元件130的位置,本實施例的封裝結構100A可包括一絕緣層140,其中絕緣層140填充於封裝元件130與核心結構層120的開口122之間的空氣間隙G內,以將封裝元件130定位於開口122中。再者,本實施例的封裝結構100A可更包括一黏著層150,其中黏著層150配置於核心結構層120與金屬基板110之間,而核心結構層120透過黏著層150而黏著且固定於金屬基板110上。此外,為了增加封裝元件130的散熱效果,本實施例的封裝結構100A亦更包括一導熱膠層160,其中導熱膠層160配置於封裝元件130與金屬基板110之間,而封裝元件130可透過導熱膠層160而黏著且固定於金屬基板110上,且封裝元件130可依序透過導熱膠層160與金屬基板110而將所產生的熱快速地傳遞至外界。1 again, in order to further fix the position of the
簡言之,在本實施例封裝結構100A的配置中,封裝元件130是配置在金屬基板110上且位於核心結構層120的開口122中。如此一來,封裝元件130是內埋入核心結構層120中,且封裝元件130的外引腳132與核心結構層120的圖案化導電層124呈共平面,藉此可降低封裝結構100A的整體封裝高度。此外,封裝元件130是配置於金屬基板110上,可藉由金屬基板110的導熱性質來提升封裝元件130的散熱效率。In short, in the configuration of the
在此必須說明的是,下述實施例沿用前述實施例的元件標號與部分內容,其中採用相同的標號來表示相同或近似的元件,並且省略了相同技術內容的說明。關於省略部分的說明可參考前述實施例,下述實施例不再重複贅述。It must be noted here that the following embodiments use the element numbers and part of the content of the foregoing embodiments, wherein the same numbers are used to represent the same or similar elements, and the description of the same technical content is omitted. For the description of the omitted parts, please refer to the foregoing embodiments, and the following embodiments will not be repeated.
圖2繪示為本發明的另一實施例的一種封裝結構的剖面示意圖。請同時參考圖1與圖2,本實施例的封裝結構100B與圖1的封裝結構100A相似,兩者的差異在於:本實施例的封裝元件230具體化為打線型態的封裝元件。詳細來說,本實施例的封裝元件230包括一晶片座231、外引腳232、一晶片234、一封裝膠體236以及多條導線238。晶片234配置於晶片座231上,而導線238電性連接於晶片234與外引腳232之間,且封裝膠體236包覆晶片234、晶片座231與導線238且填充於外引腳232之間。外引腳232配置於封裝膠體236上,且每一外引腳232的一外表面S1’切齊於圖案化導電層124的上表面S2。2 is a schematic cross-sectional view of a package structure according to another embodiment of the invention. Please refer to FIGS. 1 and 2 at the same time. The
圖3繪示為本發明的另一實施例的一種封裝結構的剖面示意圖。請同時參考圖1與圖3,本實施例的封裝結構100C與圖1的封裝結構100A相似,兩者的差異在於:本實施例的金屬基板110c更具有一凹槽114c,其中封裝元件130配置於凹槽114c內,且配置表面112與凹槽114c的一底面115c具有一高度差H。詳細而言,金屬基板110c的凹槽114c可用於容納厚度較大的封裝元件130,使封裝元件130可被內埋於核心結構層120的開口122中,而達到外引腳132的外表面S1切齊於圖案化導電層124的上表面S2,以降低整體封裝高度的目的。3 is a schematic cross-sectional view of a package structure according to another embodiment of the invention. Please refer to FIGS. 1 and 3 at the same time. The
圖4繪示為本發明的另一實施例的一種封裝結構的剖面示意圖。請同時參考圖3與圖4,本實施例的封裝結構100D與圖3的封裝結構100C相似,兩者的差異在於:本實施例的金屬基板110d的凹槽114d的底面115d具體化為一粗糙表面,其中粗糙表面形例如是矩形鋸齒狀結構,但本發明並不依此為限。本實施例的金屬基板110d的凹槽114d的底面115d可增加絕緣層140與導熱膠層160與金屬基板110d之間接觸面積,以增加與金屬基板110d之間的結合力,藉此可提升絕緣層140、導熱膠層160與金屬基板110d之間的結合強度。4 is a schematic cross-sectional view of a package structure according to another embodiment of the invention. 3 and 4 at the same time, the
圖5繪示為本發明的另一實施例的一種封裝結構的剖面示意圖。請同時參考圖1與圖5,本實施例的封裝結構100E與圖1的封裝結構100A相似,兩者的差異在於:本實施例的封裝結構100E更包括一表面處理層170,配置於圖案化導電層124的上表面S2上與外引腳132的外表面S1上,其中表面處理層170例如是鎳層、金層、銀層、鎳鈀金層或其他適當的金屬或合金,用以防止圖案化導電層124與外引腳132受水氧侵襲而產生氧化的現象。5 is a schematic cross-sectional view of a package structure according to another embodiment of the invention. 1 and 5 at the same time, the
圖6繪示為本發明的另一實施例的一種封裝結構的剖面示意圖。請同時參考圖1與圖6,本實施例的封裝結構100F與圖1的封裝結構100A相似,兩者的差異在於:本實施例的封裝結構100F更包括一防焊層180,配置於核心結構層120上且至少覆蓋圖案化導電層124與封裝元件130的外引腳132。詳細而言,在本實施例中,防焊層180覆蓋圖案化導電層124、圖案化導電層124所暴露出的介電層126以及封裝元件130的外引腳132與位於外引腳132之間的部分封裝膠體136。防焊層180可用以防止圖案化導電層124或外引腳132的不正常電性接觸,而產生電性干擾或短路等情形。6 is a schematic cross-sectional view of a package structure according to another embodiment of the invention. 1 and 6 at the same time, the
圖7繪示為本發明的另一實施例的一種封裝結構的剖面示意圖。請同時參考圖1與圖7,本實施例的封裝結構100G與圖1的封裝結構100A相似,兩者的差異在於:本實施例的封裝結構100G更包括一表面處理層170’及一防焊層180’。防焊層180’配置於核心結構層120上且覆蓋圖案化導電層124,其中防焊層180’暴露出圖案化導電層124的部分上表面S2。表面處理層170’配置於防焊層180’所暴露出的圖案化導電層124的上表面S2上與每一外引腳132的外表面S1上,以此防止圖案化導電層124與外引腳132受到水氧侵襲而產生氧化。封裝元件130的每一外引腳132透過導線W與核心結構層120的圖案化導電層124電性連接。進一步而言,導線W的兩端是分別電性連接配置在圖案化導電層124與引腳132上的表面處理層170’。換言之,本實施例的封裝元件130是透過導線W的方式與核心結構層120的圖案化導電層124電性連接。FIG. 7 is a schematic cross-sectional view of a package structure according to another embodiment of the invention. 1 and 7 at the same time, the
圖8繪示為本發明的另一實施例的一種封裝結構的剖面示意圖。請同時參考圖6與圖8,本實施例的封裝結構100H與圖6的封裝結構100F相似,兩者的差異在於:本實施例的封裝結構100H更包括一電子元件190及多個導電通孔190A。電子元件190配置於防焊層180上。導電通孔190A貫穿防焊層180且暴露部分圖案化導電層124,其中電子元件190透過導電通孔190A而電性連接圖案化導電層124。此處,電子元件190例如是感測器、發報器、接收器或其他適當的元件,於此並不加以限制。FIG. 8 is a schematic cross-sectional view of a package structure according to another embodiment of the invention. 6 and 8 at the same time, the
綜上所述,在本發明的封裝結構的配置中,封裝元件是配置在金屬基板上且位於核心結構層的開口中。如此一來,封裝元件是內埋入核心結構層中,且封裝元件的外引腳與核心結構層的圖案化導電層呈共平面,藉此可降低封裝結構的整體封裝高度。此外,封裝元件是配置於金屬基板上,可藉由金屬基板的導熱性質來提升封裝元件的散熱效率。To sum up, in the configuration of the packaging structure of the present invention, the packaging element is configured on the metal substrate and located in the opening of the core structure layer. In this way, the package component is embedded in the core structure layer, and the outer pins of the package component and the patterned conductive layer of the core structure layer are coplanar, thereby reducing the overall package height of the package structure. In addition, the package component is disposed on the metal substrate, and the heat dissipation efficiency of the package component can be improved by the thermal conductivity of the metal substrate.
雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明的精神和範圍內,當可作些許的更動與潤飾,故本發明的保護範圍當視後附的申請專利範圍所界定者為準。Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention. Anyone with ordinary knowledge in the technical field can make slight changes and modifications without departing from the spirit and scope of the present invention. The scope of protection of the present invention shall be subject to those defined by the attached patent scope.
100A、100B、100C、100D、100E、100F、100G、100H‧‧‧封裝結構110、110c、110d‧‧‧金屬基板112‧‧‧配置表面114、114c、114d‧‧‧凹槽115c、115d‧‧‧底面120‧‧‧核心結構層122‧‧‧開口124‧‧‧圖案化導電層126‧‧‧介電層130、230‧‧‧封裝元件231‧‧‧晶片座132、232‧‧‧外引腳134、234‧‧‧晶片1342‧‧‧接墊136、236‧‧‧封裝膠體238‧‧‧導線140‧‧‧絕緣層150‧‧‧黏著層160‧‧‧導熱膠層170、170’‧‧‧表面處理層180、180’‧‧‧防焊層190‧‧‧電子元件190A‧‧‧導電通孔W‧‧‧導線H‧‧‧高度差S1、S1’‧‧‧外表面S2‧‧‧上表面S3‧‧‧表面G‧‧‧空氣間隙100A, 100B, 100C, 100D, 100E, 100F, 100G, 100H‧‧‧
圖1繪示為本發明的一實施例的一種封裝結構的剖面示意圖。 圖2繪示為本發明的另一實施例的一種封裝結構的剖面示意圖。 圖3繪示為本發明的另一實施例的一種封裝結構的剖面示意圖。 圖4繪示為本發明的另一實施例的一種封裝結構的剖面示意圖。 圖5繪示為本發明的另一實施例的一種封裝結構的剖面示意圖。 圖6繪示為本發明的另一實施例的一種封裝結構的剖面示意圖。 圖7繪示為本發明的另一實施例的一種封裝結構的剖面示意圖。 圖8繪示為本發明的另一實施例的一種封裝結構的剖面示意圖。FIG. 1 is a schematic cross-sectional view of a package structure according to an embodiment of the invention. 2 is a schematic cross-sectional view of a package structure according to another embodiment of the invention. 3 is a schematic cross-sectional view of a package structure according to another embodiment of the invention. 4 is a schematic cross-sectional view of a package structure according to another embodiment of the invention. 5 is a schematic cross-sectional view of a package structure according to another embodiment of the invention. 6 is a schematic cross-sectional view of a package structure according to another embodiment of the invention. FIG. 7 is a schematic cross-sectional view of a package structure according to another embodiment of the invention. FIG. 8 is a schematic cross-sectional view of a package structure according to another embodiment of the invention.
100A‧‧‧封裝結構 100A‧‧‧Packaging structure
110‧‧‧金屬基板 110‧‧‧Metal substrate
112‧‧‧配置表面 112‧‧‧Configuration surface
120‧‧‧核心結構層 120‧‧‧Core structure layer
122‧‧‧開口 122‧‧‧Open
124‧‧‧圖案化導電層 124‧‧‧Patterned conductive layer
126‧‧‧介電層 126‧‧‧Dielectric layer
130‧‧‧封裝元件 130‧‧‧Packaging components
132‧‧‧外引腳 132‧‧‧External pin
134‧‧‧晶片 134‧‧‧chip
1342‧‧‧接墊 1342‧‧‧Connector
136‧‧‧封裝膠體 136‧‧‧Packaging gel
140‧‧‧絕緣層 140‧‧‧Insulation layer
150‧‧‧黏著層 150‧‧‧Adhesive layer
160‧‧‧導熱膠層 160‧‧‧Thermal conductive adhesive layer
S1‧‧‧外表面 S1‧‧‧Outer surface
S2‧‧‧上表面 S2‧‧‧Upper surface
S3‧‧‧表面 S3‧‧‧surface
G‧‧‧空氣間隙 G‧‧‧Air gap
Claims (16)
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| TW106116527A TWI698971B (en) | 2017-05-18 | 2017-05-18 | Package structure |
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| Application Number | Priority Date | Filing Date | Title |
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| TW106116527A TWI698971B (en) | 2017-05-18 | 2017-05-18 | Package structure |
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| TW201901892A TW201901892A (en) | 2019-01-01 |
| TWI698971B true TWI698971B (en) | 2020-07-11 |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200625575A (en) * | 2005-01-12 | 2006-07-16 | Phoenix Prec Technology Corp | Superfine-circuit semiconductor package structure |
| TW200929462A (en) * | 2007-12-19 | 2009-07-01 | Raydium Semiconductor Corp | Chip, chip manufacturing method, and chip packaging structure |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200625575A (en) * | 2005-01-12 | 2006-07-16 | Phoenix Prec Technology Corp | Superfine-circuit semiconductor package structure |
| TW200929462A (en) * | 2007-12-19 | 2009-07-01 | Raydium Semiconductor Corp | Chip, chip manufacturing method, and chip packaging structure |
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