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TWI698971B - Package structure - Google Patents

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TWI698971B
TWI698971B TW106116527A TW106116527A TWI698971B TW I698971 B TWI698971 B TW I698971B TW 106116527 A TW106116527 A TW 106116527A TW 106116527 A TW106116527 A TW 106116527A TW I698971 B TWI698971 B TW I698971B
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Taiwan
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layer
package
patterned conductive
metal substrate
conductive layer
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TW106116527A
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Chinese (zh)
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TW201901892A (en
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曾子章
王金勝
譚瑞敏
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欣興電子股份有限公司
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Abstract

A package structure includes a metal substrate, a core structure layer and a package component. The core structure layer is disposed on the metal substrate and has an opening and a patterned conductive layer. The package component is disposed on the metal substrate and located in the opening of the core structure layer. The package component includes a plurality of outer pins, and the outer pins are electrically connected to the patterned conductive layer of the core structure layer. An outer surface of each of the outer pins is flush with a top surface of the patterned conductive layer.

Description

封裝結構Package structure

本發明是有關於一種封裝結構,且特別是有關於一種可內埋封裝元件的封裝結構。The present invention relates to a packaging structure, and more particularly to a packaging structure that can embed packaging components.

當考慮電子裝置或封裝結構的整體厚度時,則需要探討內埋元件的構裝方式。藉由元件的內埋化,可使封裝體積大幅度縮小,能放入更多高功能性元件,以增加基板表面之佈局面積,以達到電子產品薄型化之目的。一般而言,在習知使用內埋式元件的封裝技術中,需先在基板上形成一容置槽,以將元件配置於基板的容置槽內。之後,再進行填充絕緣膠體的步驟,以使元件內埋於基板中。然而,內埋元件往往會面臨到散熱不佳的問題,進而影響電子裝置或封裝結構整體的散熱性能。When considering the overall thickness of the electronic device or packaging structure, it is necessary to discuss the packaging method of the embedded component. By embedding the components, the package volume can be greatly reduced, and more high-functional components can be put in to increase the layout area of the substrate surface to achieve the goal of thinning the electronic product. Generally speaking, in the conventional packaging technology using embedded components, it is necessary to first form an accommodating groove on the substrate so that the components are arranged in the accommodating groove of the substrate. After that, the step of filling the insulating colloid is performed to make the component buried in the substrate. However, the embedded components often face the problem of poor heat dissipation, which further affects the overall heat dissipation performance of the electronic device or the package structure.

本發明提供一種封裝結構,其可內埋封裝元件,具有縮減封裝高度的功效。The invention provides a packaging structure, which can embed packaging components and has the effect of reducing the packaging height.

本發明的一種封裝結構,包括一金屬基板、一核心結構層及一封裝元件。核心結構層配置於金屬基板上,且具有一開口以及一圖案化導電層,封裝元件配置於金屬基板上,且位於核心結構層的開口中。其中封裝元件包括多個外引腳,而外引腳與核心結構層的圖案化導電層電性連接,且每一外引腳的一外表面切齊於圖案化導電層的一上表面。A packaging structure of the present invention includes a metal substrate, a core structure layer and a packaging element. The core structure layer is disposed on the metal substrate and has an opening and a patterned conductive layer. The packaging element is disposed on the metal substrate and is located in the opening of the core structure layer. The package component includes a plurality of external pins, and the external pins are electrically connected to the patterned conductive layer of the core structure layer, and an outer surface of each external pin is aligned with an upper surface of the patterned conductive layer.

在本發明的一實施例中,上述的金屬基板具有一配置表面與一凹槽,核心結構層配置於配置表面上,而封裝元件配置於凹槽內,且配置表面與凹槽的一底面具有一高度差。In an embodiment of the present invention, the above-mentioned metal substrate has a configuration surface and a groove, the core structure layer is disposed on the configuration surface, and the package component is disposed in the groove, and the configuration surface and a bottom surface of the groove have A height difference.

在本發明的一實施例中,上述的凹槽的底面為一粗糙表面。In an embodiment of the present invention, the bottom surface of the aforementioned groove is a rough surface.

在本發明的一實施例中,上述的金屬基板具有一配置表面,而核心結構層與封裝元件配置於配置表面上。In an embodiment of the present invention, the aforementioned metal substrate has a configuration surface, and the core structure layer and the packaging components are disposed on the configuration surface.

在本發明的一實施例中,上述的核心結構層包括一介電層,介電層位於圖案化導電層與金屬基板之間。In an embodiment of the present invention, the aforementioned core structure layer includes a dielectric layer located between the patterned conductive layer and the metal substrate.

在本發明的一實施例中,上述的封裝元件更包括一晶片、一封裝膠體。晶片具有多個接墊。封裝膠體包覆晶片且暴露出每一接墊的一表面,其中外引腳配置於封裝膠體上且分別連接至每一接墊的表面。In an embodiment of the present invention, the above-mentioned packaging component further includes a chip and a packaging compound. The chip has multiple pads. The packaging glue covers the chip and exposes a surface of each pad, wherein the outer pins are arranged on the packaging glue and are respectively connected to the surface of each pad.

在本發明的一實施例中,上述的封裝元件更包括一晶片座、一晶片、一封裝膠體以及多條導線。晶片配置於晶片座上。封裝膠體包覆晶片及晶片座,其中外引腳配置於封裝膠體上,且導線電性連接於晶片與些外引腳之間。In an embodiment of the present invention, the above-mentioned package component further includes a chip holder, a chip, a package compound, and a plurality of wires. The chip is arranged on the chip holder. The package glue covers the chip and the chip holder, wherein the external pins are arranged on the package glue, and the wires are electrically connected between the chip and the external pins.

在本發明的一實施例中,上述的外引腳透過多條導線與核心結構層的圖案化導電層電性連接。In an embodiment of the present invention, the aforementioned external pins are electrically connected to the patterned conductive layer of the core structure layer through a plurality of wires.

在本發明的一實施例中,上述的外引腳結構性且電性連接至核心結構層的圖案化導電層。In an embodiment of the present invention, the aforementioned external pins are structurally and electrically connected to the patterned conductive layer of the core structure layer.

在本發明的一實施例中,上述的封裝結構更包括一絕緣層,填充於封裝元件與核心結構層的開口之間。In an embodiment of the present invention, the aforementioned package structure further includes an insulating layer filled between the package element and the opening of the core structure layer.

在本發明的一實施例中,上述的封裝結構更包括一黏著層,配置於核心結構層與金屬基板之間。In an embodiment of the present invention, the aforementioned package structure further includes an adhesive layer disposed between the core structure layer and the metal substrate.

在本發明的一實施例中,上述的封裝結構更包括一導熱膠層,配置於封裝元件與金屬基板之間。In an embodiment of the present invention, the aforementioned packaging structure further includes a thermally conductive adhesive layer disposed between the packaging element and the metal substrate.

在本發明的一實施例中,上述的封裝結構更包括一表面處理層,配置於圖案化導電層的上表面上與每一外引腳的外表面上。In an embodiment of the present invention, the aforementioned package structure further includes a surface treatment layer disposed on the upper surface of the patterned conductive layer and the outer surface of each external pin.

在本發明的一實施例中,上述的封裝結構更包括一防焊層,配置於核心結構層,且至少覆蓋圖案化導電層與封裝元件的外引腳。In an embodiment of the present invention, the above-mentioned package structure further includes a solder mask layer disposed on the core structure layer and at least covering the patterned conductive layer and the outer pins of the package component.

在本發明的一實施例中,上述的封裝結構更包括一電子元件及多個導電通孔。電子元件配置於防焊層上。導電通孔貫穿防焊層且暴露部分圖案化導電層,其中電子元件通過多個導電通孔而電性連接圖案化導電層。In an embodiment of the present invention, the aforementioned packaging structure further includes an electronic component and a plurality of conductive vias. The electronic components are arranged on the solder mask. The conductive through hole penetrates the solder mask layer and exposes a part of the patterned conductive layer, wherein the electronic component is electrically connected to the patterned conductive layer through a plurality of conductive through holes.

在本發明的一實施例中,上述的封裝結構更包括一防焊層以及一表面處理層。防焊層配置於核心結構層,且覆蓋圖案化導電層,其中防焊層暴露出圖案化導電層的部分上表面。表面處理層,配置於防焊層所暴露出的圖案化導電層的上表面上與每一外引腳的外表面上。In an embodiment of the present invention, the aforementioned package structure further includes a solder mask layer and a surface treatment layer. The solder mask is disposed on the core structure layer and covers the patterned conductive layer, wherein the solder mask exposes part of the upper surface of the patterned conductive layer. The surface treatment layer is arranged on the upper surface of the patterned conductive layer exposed by the solder mask and the outer surface of each external pin.

基於上述,在本發明的封裝結構的配置中,封裝元件是配置在金屬基板上且位於核心結構層的開口中。如此一來,封裝元件是內埋入核心結構層中,且封裝元件的外引腳與核心結構層的圖案化導電層呈共平面,藉此可降低封裝結構的整體封裝高度。此外,封裝元件是配置於金屬基板上,可藉由金屬基板的導熱性質來提升封裝元件的散熱效率。Based on the above, in the configuration of the package structure of the present invention, the package component is arranged on the metal substrate and located in the opening of the core structure layer. In this way, the package component is embedded in the core structure layer, and the outer pins of the package component and the patterned conductive layer of the core structure layer are coplanar, thereby reducing the overall package height of the package structure. In addition, the package component is disposed on the metal substrate, and the heat dissipation efficiency of the package component can be improved by the thermal conductivity of the metal substrate.

為讓本發明的上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。In order to make the above-mentioned features and advantages of the present invention more comprehensible, the following specific embodiments are described in detail in conjunction with the accompanying drawings.

圖1繪示為本發明的一實施例的一種封裝結構的剖面示意圖。請參考圖1,本實施例的封裝結構100A,其包括一金屬基板110、一核心結構層120及一封裝元件130。核心結構層120配置於金屬基板110上,且具有一開口122以及一圖案化導電層124。封裝元件130配置於金屬基板110上且位於核心結構層110的開口122中。封裝元件130包括多個外引腳132,且每一外引腳132電性連接至核心結構層120的圖案化導電層124。特別是,每一外引腳132的一外表面S1切齊於圖案化導電層124的一上表面S2。FIG. 1 is a schematic cross-sectional view of a package structure according to an embodiment of the invention. Please refer to FIG. 1, the package structure 100A of this embodiment includes a metal substrate 110, a core structure layer 120 and a package component 130. The core structure layer 120 is disposed on the metal substrate 110 and has an opening 122 and a patterned conductive layer 124. The package element 130 is disposed on the metal substrate 110 and located in the opening 122 of the core structure layer 110. The package component 130 includes a plurality of external pins 132, and each of the external pins 132 is electrically connected to the patterned conductive layer 124 of the core structure layer 120. In particular, an outer surface S1 of each outer pin 132 is aligned with an upper surface S2 of the patterned conductive layer 124.

詳細而言,本實施例的金屬基板110具有一配置表面112,且核心結構層120與封裝元件130分別配置於配置表面112上。封裝元件130與核心結構層120之間具有一空氣間隙G,意即封裝元件130不接觸核心結構層120的開口122的內壁。核心結構層120更包括一介電層126,其中介電層126位於圖案化導電層124與金屬基板110之間。封裝元件130更包括一晶片134、一封裝膠體136,其中晶片134具有多個接墊1342,而封裝膠體136包覆晶片134且暴露出每一接墊1342的一表面S3。每一外引腳132配置於封裝膠體136上,且分別結構性且電性連接至每一接墊1342的表面S3,以使晶片134可透過外引腳132而電性連接至核心結構層120的圖案化導電層124。如圖1所示,本實施例的封裝元件130具體化為覆晶型態的封裝元件,且封裝元件130的外引腳132是結構性且電性連接至核心結構層120的圖案化導電層124。In detail, the metal substrate 110 of this embodiment has a configuration surface 112, and the core structure layer 120 and the package component 130 are respectively disposed on the configuration surface 112. There is an air gap G between the packaging element 130 and the core structure layer 120, which means that the packaging element 130 does not contact the inner wall of the opening 122 of the core structure layer 120. The core structure layer 120 further includes a dielectric layer 126, wherein the dielectric layer 126 is located between the patterned conductive layer 124 and the metal substrate 110. The package component 130 further includes a chip 134 and a package compound 136. The chip 134 has a plurality of pads 1342, and the package compound 136 covers the chip 134 and exposes a surface S3 of each pad 1342. Each external pin 132 is disposed on the packaging compound 136, and is structurally and electrically connected to the surface S3 of each pad 1342, so that the chip 134 can be electrically connected to the core structure layer 120 through the external pins 132 The patterned conductive layer 124. As shown in FIG. 1, the package component 130 of this embodiment is embodied as a flip-chip package component, and the outer pins 132 of the package component 130 are structurally and electrically connected to the patterned conductive layer of the core structure layer 120 124.

請再參考圖1,為了進一步固定封裝元件130的位置,本實施例的封裝結構100A可包括一絕緣層140,其中絕緣層140填充於封裝元件130與核心結構層120的開口122之間的空氣間隙G內,以將封裝元件130定位於開口122中。再者,本實施例的封裝結構100A可更包括一黏著層150,其中黏著層150配置於核心結構層120與金屬基板110之間,而核心結構層120透過黏著層150而黏著且固定於金屬基板110上。此外,為了增加封裝元件130的散熱效果,本實施例的封裝結構100A亦更包括一導熱膠層160,其中導熱膠層160配置於封裝元件130與金屬基板110之間,而封裝元件130可透過導熱膠層160而黏著且固定於金屬基板110上,且封裝元件130可依序透過導熱膠層160與金屬基板110而將所產生的熱快速地傳遞至外界。1 again, in order to further fix the position of the package element 130, the package structure 100A of this embodiment may include an insulating layer 140, wherein the insulating layer 140 is filled with air between the package element 130 and the opening 122 of the core structure layer 120 Within the gap G, the package component 130 is positioned in the opening 122. Furthermore, the package structure 100A of this embodiment may further include an adhesive layer 150, wherein the adhesive layer 150 is disposed between the core structure layer 120 and the metal substrate 110, and the core structure layer 120 is adhered and fixed to the metal through the adhesive layer 150 On the substrate 110. In addition, in order to increase the heat dissipation effect of the package component 130, the package structure 100A of this embodiment further includes a thermally conductive adhesive layer 160, wherein the thermally conductive adhesive layer 160 is disposed between the package component 130 and the metal substrate 110, and the package component 130 can penetrate The thermally conductive adhesive layer 160 is adhered and fixed on the metal substrate 110, and the package element 130 can quickly transfer the generated heat to the outside through the thermally conductive adhesive layer 160 and the metal substrate 110 in sequence.

簡言之,在本實施例封裝結構100A的配置中,封裝元件130是配置在金屬基板110上且位於核心結構層120的開口122中。如此一來,封裝元件130是內埋入核心結構層120中,且封裝元件130的外引腳132與核心結構層120的圖案化導電層124呈共平面,藉此可降低封裝結構100A的整體封裝高度。此外,封裝元件130是配置於金屬基板110上,可藉由金屬基板110的導熱性質來提升封裝元件130的散熱效率。In short, in the configuration of the packaging structure 100A of this embodiment, the packaging element 130 is disposed on the metal substrate 110 and located in the opening 122 of the core structure layer 120. In this way, the package component 130 is embedded in the core structure layer 120, and the outer pins 132 of the package component 130 and the patterned conductive layer 124 of the core structure layer 120 are coplanar, thereby reducing the overall package structure 100A. Package height. In addition, the package element 130 is disposed on the metal substrate 110, and the heat dissipation efficiency of the package element 130 can be improved by the thermal conductivity of the metal substrate 110.

在此必須說明的是,下述實施例沿用前述實施例的元件標號與部分內容,其中採用相同的標號來表示相同或近似的元件,並且省略了相同技術內容的說明。關於省略部分的說明可參考前述實施例,下述實施例不再重複贅述。It must be noted here that the following embodiments use the element numbers and part of the content of the foregoing embodiments, wherein the same numbers are used to represent the same or similar elements, and the description of the same technical content is omitted. For the description of the omitted parts, please refer to the foregoing embodiments, and the following embodiments will not be repeated.

圖2繪示為本發明的另一實施例的一種封裝結構的剖面示意圖。請同時參考圖1與圖2,本實施例的封裝結構100B與圖1的封裝結構100A相似,兩者的差異在於:本實施例的封裝元件230具體化為打線型態的封裝元件。詳細來說,本實施例的封裝元件230包括一晶片座231、外引腳232、一晶片234、一封裝膠體236以及多條導線238。晶片234配置於晶片座231上,而導線238電性連接於晶片234與外引腳232之間,且封裝膠體236包覆晶片234、晶片座231與導線238且填充於外引腳232之間。外引腳232配置於封裝膠體236上,且每一外引腳232的一外表面S1’切齊於圖案化導電層124的上表面S2。2 is a schematic cross-sectional view of a package structure according to another embodiment of the invention. Please refer to FIGS. 1 and 2 at the same time. The package structure 100B of this embodiment is similar to the package structure 100A of FIG. 1. The difference between the two is that the package component 230 of this embodiment is embodied as a wire-bonded package component. In detail, the packaged component 230 of this embodiment includes a die base 231, external pins 232, a die 234, a packaging compound 236, and a plurality of wires 238. The chip 234 is disposed on the chip holder 231, and the wire 238 is electrically connected between the chip 234 and the outer pins 232, and the encapsulant 236 covers the chip 234, the chip holder 231 and the wires 238 and is filled between the outer pins 232 . The outer pins 232 are disposed on the packaging glue 236, and an outer surface S1' of each outer pin 232 is aligned with the upper surface S2 of the patterned conductive layer 124.

圖3繪示為本發明的另一實施例的一種封裝結構的剖面示意圖。請同時參考圖1與圖3,本實施例的封裝結構100C與圖1的封裝結構100A相似,兩者的差異在於:本實施例的金屬基板110c更具有一凹槽114c,其中封裝元件130配置於凹槽114c內,且配置表面112與凹槽114c的一底面115c具有一高度差H。詳細而言,金屬基板110c的凹槽114c可用於容納厚度較大的封裝元件130,使封裝元件130可被內埋於核心結構層120的開口122中,而達到外引腳132的外表面S1切齊於圖案化導電層124的上表面S2,以降低整體封裝高度的目的。3 is a schematic cross-sectional view of a package structure according to another embodiment of the invention. Please refer to FIGS. 1 and 3 at the same time. The package structure 100C of this embodiment is similar to the package structure 100A of FIG. 1. The difference between the two is that the metal substrate 110c of this embodiment further has a groove 114c in which the package element 130 is configured Inside the groove 114c, the disposition surface 112 and a bottom surface 115c of the groove 114c have a height difference H. In detail, the groove 114c of the metal substrate 110c can be used to accommodate a package component 130 with a relatively large thickness, so that the package component 130 can be embedded in the opening 122 of the core structure layer 120 to reach the outer surface S1 of the outer pin 132 It is cut to the upper surface S2 of the patterned conductive layer 124 to reduce the overall package height.

圖4繪示為本發明的另一實施例的一種封裝結構的剖面示意圖。請同時參考圖3與圖4,本實施例的封裝結構100D與圖3的封裝結構100C相似,兩者的差異在於:本實施例的金屬基板110d的凹槽114d的底面115d具體化為一粗糙表面,其中粗糙表面形例如是矩形鋸齒狀結構,但本發明並不依此為限。本實施例的金屬基板110d的凹槽114d的底面115d可增加絕緣層140與導熱膠層160與金屬基板110d之間接觸面積,以增加與金屬基板110d之間的結合力,藉此可提升絕緣層140、導熱膠層160與金屬基板110d之間的結合強度。4 is a schematic cross-sectional view of a package structure according to another embodiment of the invention. 3 and 4 at the same time, the package structure 100D of this embodiment is similar to the package structure 100C of FIG. 3, the difference between the two is: the bottom surface 115d of the groove 114d of the metal substrate 110d of this embodiment is embodied as a rough The surface, wherein the rough surface shape is, for example, a rectangular saw-tooth structure, but the present invention is not limited thereto. The bottom surface 115d of the groove 114d of the metal substrate 110d of this embodiment can increase the contact area between the insulating layer 140 and the thermally conductive adhesive layer 160 and the metal substrate 110d to increase the bonding force with the metal substrate 110d, thereby improving insulation The bonding strength between the layer 140, the thermally conductive adhesive layer 160 and the metal substrate 110d.

圖5繪示為本發明的另一實施例的一種封裝結構的剖面示意圖。請同時參考圖1與圖5,本實施例的封裝結構100E與圖1的封裝結構100A相似,兩者的差異在於:本實施例的封裝結構100E更包括一表面處理層170,配置於圖案化導電層124的上表面S2上與外引腳132的外表面S1上,其中表面處理層170例如是鎳層、金層、銀層、鎳鈀金層或其他適當的金屬或合金,用以防止圖案化導電層124與外引腳132受水氧侵襲而產生氧化的現象。5 is a schematic cross-sectional view of a package structure according to another embodiment of the invention. 1 and 5 at the same time, the package structure 100E of this embodiment is similar to the package structure 100A of FIG. 1, the difference between the two is: the package structure 100E of this embodiment further includes a surface treatment layer 170, which is configured in the patterning On the upper surface S2 of the conductive layer 124 and on the outer surface S1 of the outer pin 132, the surface treatment layer 170 is, for example, a nickel layer, a gold layer, a silver layer, a nickel-palladium-gold layer or other suitable metals or alloys to prevent The patterned conductive layer 124 and the outer pins 132 are attacked by water and oxygen to cause oxidation.

圖6繪示為本發明的另一實施例的一種封裝結構的剖面示意圖。請同時參考圖1與圖6,本實施例的封裝結構100F與圖1的封裝結構100A相似,兩者的差異在於:本實施例的封裝結構100F更包括一防焊層180,配置於核心結構層120上且至少覆蓋圖案化導電層124與封裝元件130的外引腳132。詳細而言,在本實施例中,防焊層180覆蓋圖案化導電層124、圖案化導電層124所暴露出的介電層126以及封裝元件130的外引腳132與位於外引腳132之間的部分封裝膠體136。防焊層180可用以防止圖案化導電層124或外引腳132的不正常電性接觸,而產生電性干擾或短路等情形。6 is a schematic cross-sectional view of a package structure according to another embodiment of the invention. 1 and 6 at the same time, the package structure 100F of this embodiment is similar to the package structure 100A of FIG. 1, the difference between the two is: the package structure 100F of this embodiment further includes a solder mask layer 180, which is disposed on the core structure The layer 120 at least covers the patterned conductive layer 124 and the outer pins 132 of the package component 130. In detail, in this embodiment, the solder mask layer 180 covers the patterned conductive layer 124, the dielectric layer 126 exposed by the patterned conductive layer 124, and the outer leads 132 of the package component 130 and the outer leads 132 located thereon. Part of the encapsulation gel 136 between. The solder mask layer 180 can be used to prevent abnormal electrical contact of the patterned conductive layer 124 or the outer pins 132 from causing electrical interference or short circuit.

圖7繪示為本發明的另一實施例的一種封裝結構的剖面示意圖。請同時參考圖1與圖7,本實施例的封裝結構100G與圖1的封裝結構100A相似,兩者的差異在於:本實施例的封裝結構100G更包括一表面處理層170’及一防焊層180’。防焊層180’配置於核心結構層120上且覆蓋圖案化導電層124,其中防焊層180’暴露出圖案化導電層124的部分上表面S2。表面處理層170’配置於防焊層180’所暴露出的圖案化導電層124的上表面S2上與每一外引腳132的外表面S1上,以此防止圖案化導電層124與外引腳132受到水氧侵襲而產生氧化。封裝元件130的每一外引腳132透過導線W與核心結構層120的圖案化導電層124電性連接。進一步而言,導線W的兩端是分別電性連接配置在圖案化導電層124與引腳132上的表面處理層170’。換言之,本實施例的封裝元件130是透過導線W的方式與核心結構層120的圖案化導電層124電性連接。FIG. 7 is a schematic cross-sectional view of a package structure according to another embodiment of the invention. 1 and 7 at the same time, the package structure 100G of this embodiment is similar to the package structure 100A of FIG. 1, the difference between the two is: the package structure 100G of this embodiment further includes a surface treatment layer 170' and a solder mask Layer 180'. The solder mask 180' is disposed on the core structure layer 120 and covers the patterned conductive layer 124, wherein the solder mask 180' exposes a part of the upper surface S2 of the patterned conductive layer 124. The surface treatment layer 170' is disposed on the upper surface S2 of the patterned conductive layer 124 exposed by the solder mask layer 180' and on the outer surface S1 of each outer pin 132, so as to prevent the patterned conductive layer 124 and the external lead The feet 132 are attacked by water and oxygen to produce oxidation. Each external pin 132 of the package component 130 is electrically connected to the patterned conductive layer 124 of the core structure layer 120 through a wire W. Furthermore, both ends of the wire W are electrically connected to the surface treatment layer 170' disposed on the patterned conductive layer 124 and the pins 132, respectively. In other words, the package component 130 of this embodiment is electrically connected to the patterned conductive layer 124 of the core structure layer 120 through the wire W.

圖8繪示為本發明的另一實施例的一種封裝結構的剖面示意圖。請同時參考圖6與圖8,本實施例的封裝結構100H與圖6的封裝結構100F相似,兩者的差異在於:本實施例的封裝結構100H更包括一電子元件190及多個導電通孔190A。電子元件190配置於防焊層180上。導電通孔190A貫穿防焊層180且暴露部分圖案化導電層124,其中電子元件190透過導電通孔190A而電性連接圖案化導電層124。此處,電子元件190例如是感測器、發報器、接收器或其他適當的元件,於此並不加以限制。FIG. 8 is a schematic cross-sectional view of a package structure according to another embodiment of the invention. 6 and 8 at the same time, the package structure 100H of this embodiment is similar to the package structure 100F of FIG. 6, the difference between the two is: the package structure 100H of this embodiment further includes an electronic component 190 and a plurality of conductive vias 190A. The electronic component 190 is disposed on the solder mask 180. The conductive via 190A penetrates the solder mask layer 180 and exposes a portion of the patterned conductive layer 124, wherein the electronic component 190 is electrically connected to the patterned conductive layer 124 through the conductive via 190A. Here, the electronic component 190 is, for example, a sensor, a transmitter, a receiver, or other appropriate components, which is not limited herein.

綜上所述,在本發明的封裝結構的配置中,封裝元件是配置在金屬基板上且位於核心結構層的開口中。如此一來,封裝元件是內埋入核心結構層中,且封裝元件的外引腳與核心結構層的圖案化導電層呈共平面,藉此可降低封裝結構的整體封裝高度。此外,封裝元件是配置於金屬基板上,可藉由金屬基板的導熱性質來提升封裝元件的散熱效率。To sum up, in the configuration of the packaging structure of the present invention, the packaging element is configured on the metal substrate and located in the opening of the core structure layer. In this way, the package component is embedded in the core structure layer, and the outer pins of the package component and the patterned conductive layer of the core structure layer are coplanar, thereby reducing the overall package height of the package structure. In addition, the package component is disposed on the metal substrate, and the heat dissipation efficiency of the package component can be improved by the thermal conductivity of the metal substrate.

雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明的精神和範圍內,當可作些許的更動與潤飾,故本發明的保護範圍當視後附的申請專利範圍所界定者為準。Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention. Anyone with ordinary knowledge in the technical field can make slight changes and modifications without departing from the spirit and scope of the present invention. The scope of protection of the present invention shall be subject to those defined by the attached patent scope.

100A、100B、100C、100D、100E、100F、100G、100H‧‧‧封裝結構110、110c、110d‧‧‧金屬基板112‧‧‧配置表面114、114c、114d‧‧‧凹槽115c、115d‧‧‧底面120‧‧‧核心結構層122‧‧‧開口124‧‧‧圖案化導電層126‧‧‧介電層130、230‧‧‧封裝元件231‧‧‧晶片座132、232‧‧‧外引腳134、234‧‧‧晶片1342‧‧‧接墊136、236‧‧‧封裝膠體238‧‧‧導線140‧‧‧絕緣層150‧‧‧黏著層160‧‧‧導熱膠層170、170’‧‧‧表面處理層180、180’‧‧‧防焊層190‧‧‧電子元件190A‧‧‧導電通孔W‧‧‧導線H‧‧‧高度差S1、S1’‧‧‧外表面S2‧‧‧上表面S3‧‧‧表面G‧‧‧空氣間隙100A, 100B, 100C, 100D, 100E, 100F, 100G, 100H‧‧‧Packaging structure 110, 110c, 110d‧‧‧Metal substrate 112‧‧ ‧‧Bottom surface 120‧‧‧Core structure layer 122‧‧‧Opening 124‧‧‧Patterned conductive layer 126‧‧‧Dielectric layer 130,230‧‧Packing component 231‧‧‧Chip holder 132,232‧‧‧ External pins 134, 234‧‧‧Chip 1342‧‧‧Pad 136,236‧‧‧Packaging glue 238‧‧‧Wire 140‧‧‧Insulation layer 150‧‧‧Adhesive layer 160‧‧‧Thermal conductive adhesive layer 170, 170'‧‧‧Surface treatment layer 180, 180'‧‧‧Soldering layer 190‧‧‧Electronic component 190A‧‧‧Conductive through hole W‧‧‧Wire H‧‧‧Height difference S1, S1'‧‧ Outside Surface S2‧‧‧Upper surface S3‧‧‧Surface G‧‧‧Air gap

圖1繪示為本發明的一實施例的一種封裝結構的剖面示意圖。 圖2繪示為本發明的另一實施例的一種封裝結構的剖面示意圖。 圖3繪示為本發明的另一實施例的一種封裝結構的剖面示意圖。 圖4繪示為本發明的另一實施例的一種封裝結構的剖面示意圖。 圖5繪示為本發明的另一實施例的一種封裝結構的剖面示意圖。 圖6繪示為本發明的另一實施例的一種封裝結構的剖面示意圖。 圖7繪示為本發明的另一實施例的一種封裝結構的剖面示意圖。 圖8繪示為本發明的另一實施例的一種封裝結構的剖面示意圖。FIG. 1 is a schematic cross-sectional view of a package structure according to an embodiment of the invention. 2 is a schematic cross-sectional view of a package structure according to another embodiment of the invention. 3 is a schematic cross-sectional view of a package structure according to another embodiment of the invention. 4 is a schematic cross-sectional view of a package structure according to another embodiment of the invention. 5 is a schematic cross-sectional view of a package structure according to another embodiment of the invention. 6 is a schematic cross-sectional view of a package structure according to another embodiment of the invention. FIG. 7 is a schematic cross-sectional view of a package structure according to another embodiment of the invention. FIG. 8 is a schematic cross-sectional view of a package structure according to another embodiment of the invention.

100A‧‧‧封裝結構 100A‧‧‧Packaging structure

110‧‧‧金屬基板 110‧‧‧Metal substrate

112‧‧‧配置表面 112‧‧‧Configuration surface

120‧‧‧核心結構層 120‧‧‧Core structure layer

122‧‧‧開口 122‧‧‧Open

124‧‧‧圖案化導電層 124‧‧‧Patterned conductive layer

126‧‧‧介電層 126‧‧‧Dielectric layer

130‧‧‧封裝元件 130‧‧‧Packaging components

132‧‧‧外引腳 132‧‧‧External pin

134‧‧‧晶片 134‧‧‧chip

1342‧‧‧接墊 1342‧‧‧Connector

136‧‧‧封裝膠體 136‧‧‧Packaging gel

140‧‧‧絕緣層 140‧‧‧Insulation layer

150‧‧‧黏著層 150‧‧‧Adhesive layer

160‧‧‧導熱膠層 160‧‧‧Thermal conductive adhesive layer

S1‧‧‧外表面 S1‧‧‧Outer surface

S2‧‧‧上表面 S2‧‧‧Upper surface

S3‧‧‧表面 S3‧‧‧surface

G‧‧‧空氣間隙 G‧‧‧Air gap

Claims (16)

一種封裝結構,包括:一金屬基板;一核心結構層,配置於該金屬基板上,且具有一開口以及一圖案化導電層,其中該圖案化導電層具有遠離該金屬基板的一上表面;以及一封裝元件,配置於該金屬基板上,且位於該核心結構層的該開口中,其中該封裝元件包括:一晶片,具有彼此相對的第一表面與第二表面,以及連接該第一表面與該第二表面的一周圍表面,其中該第二表面面向該金屬基板;多個外引腳,該些外引腳具有一遠離該金屬基板的一外表面,而該些外引腳與該核心結構層的該圖案化導電層電性連接,且各該外引腳的該外表面切齊於該圖案化導電層的該上表面;以及一封裝膠體,其中該封裝膠體覆蓋該晶片的該第二表面與該周圍表面,且該封裝膠體與該核心結構層之間具有一間隙。 A packaging structure includes: a metal substrate; a core structure layer disposed on the metal substrate and having an opening and a patterned conductive layer, wherein the patterned conductive layer has an upper surface away from the metal substrate; and A package component is disposed on the metal substrate and located in the opening of the core structure layer, wherein the package component includes: a chip having a first surface and a second surface opposite to each other, and connecting the first surface and A peripheral surface of the second surface, wherein the second surface faces the metal substrate; a plurality of outer pins, the outer pins have an outer surface away from the metal substrate, and the outer pins and the core The patterned conductive layer of the structural layer is electrically connected, and the outer surface of each of the outer pins is aligned with the upper surface of the patterned conductive layer; and an encapsulant, wherein the encapsulant covers the second part of the chip There is a gap between the two surfaces and the surrounding surface, and between the packaging glue and the core structure layer. 如申請專利範圍第1項所述的封裝結構,其中該金屬基板具有一配置表面與一凹槽,該核心結構層配置於該配置表面上,而該封裝元件配置於該凹槽內,且該配置表面與該凹槽的一底面具有一高度差。 According to the package structure described in claim 1, wherein the metal substrate has a configuration surface and a groove, the core structure layer is disposed on the configuration surface, and the package component is disposed in the groove, and the There is a height difference between the disposition surface and a bottom surface of the groove. 如申請專利範圍第2項所述的封裝結構,其中該凹槽的該底面為一粗糙表面。 According to the package structure described in item 2 of the scope of patent application, the bottom surface of the groove is a rough surface. 如申請專利範圍第1項所述的封裝結構,其中該金屬基板具有一配置表面,而該核心結構層與該封裝元件配置於該配置表面上。 According to the package structure described in claim 1, wherein the metal substrate has a configuration surface, and the core structure layer and the package component are disposed on the configuration surface. 如申請專利範圍第1項所述的封裝結構,其中該核心結構層包括一介電層,該介電層位於該圖案化導電層與該金屬基板之間。 According to the package structure described in claim 1, wherein the core structure layer includes a dielectric layer, and the dielectric layer is located between the patterned conductive layer and the metal substrate. 如申請專利範圍第1項所述的封裝結構,其中該晶片具有多個接墊,該封裝膠體包覆該晶片且暴露出各該接墊的一表面,其中該些外引腳配置於該封裝膠體上且分別連接至各該接墊的該表面。 According to the package structure described in claim 1, wherein the chip has a plurality of pads, the package glue covers the chip and exposes a surface of each of the pads, wherein the external pins are arranged on the package The glue is connected to the surface of each pad. 如申請專利範圍第1項所述的封裝結構,其中該封裝元件更包括:一晶片座,其中該晶片配置於該晶片座上,該封裝膠體包覆該晶片及該晶片座,其中該些外引腳配置於該封裝膠體上;以及多條導線,電性連接於該晶片與該些外引腳之間。 For the package structure described in claim 1, wherein the package component further includes: a die holder, wherein the chip is disposed on the die holder, the packaging compound covers the chip and the die holder, wherein the outer The pins are arranged on the packaging glue; and a plurality of wires are electrically connected between the chip and the external pins. 如申請專利範圍第1項所述的封裝結構,其中該封裝元件的該些外引腳透過多條導線與該核心結構層的該圖案化導電層電性連接。 According to the package structure described in claim 1, wherein the external pins of the package element are electrically connected to the patterned conductive layer of the core structure layer through a plurality of wires. 如申請專利範圍第1項所述的封裝結構,其中該封裝元件的該些外引腳結構性且電性連接至該核心結構層的該圖案化導電層。 The package structure according to the first item of the scope of patent application, wherein the external pins of the package element are structurally and electrically connected to the patterned conductive layer of the core structure layer. 如申請專利範圍第1項所述的封裝結構,更包括:一絕緣層,填充於該封裝元件與該核心結構層的該開口之間。 The package structure as described in item 1 of the scope of patent application further includes: an insulating layer filled between the package element and the opening of the core structure layer. 如申請專利範圍第1項所述的封裝結構,更包括:一黏著層,配置於該核心結構層與該金屬基板之間。 The package structure described in item 1 of the scope of patent application further includes: an adhesive layer disposed between the core structure layer and the metal substrate. 如申請專利範圍第1項所述的封裝結構,更包括:一導熱膠層,配置於該封裝元件與該金屬基板之間。 The package structure as described in item 1 of the scope of patent application further includes: a thermally conductive adhesive layer disposed between the package element and the metal substrate. 如申請專利範圍第1項所述的封裝結構,更包括:一表面處理層,配置於該圖案化導電層的該上表面上與各該外引腳的該外表面上。 The package structure described in item 1 of the scope of patent application further includes: a surface treatment layer disposed on the upper surface of the patterned conductive layer and the outer surface of each of the outer pins. 如申請專利範圍第1項所述的封裝結構,更包括:一防焊層,配置於該核心結構層,且至少覆蓋該圖案化導電層與該封裝元件的該些外引腳。 The package structure described in item 1 of the scope of patent application further includes: a solder mask layer disposed on the core structure layer and at least covering the patterned conductive layer and the external pins of the package component. 如申請專利範圍第14項所述的封裝結構,更包括:一電子元件,配置於該防焊層上;以及多個導電通孔,貫穿該防焊層且暴露部分該圖案化導電層,該電子元件透過該些導電通孔而電性連接該圖案化導電層。 As described in item 14 of the scope of the patent application, the package structure further includes: an electronic component disposed on the solder mask; and a plurality of conductive vias penetrating the solder mask and exposing a portion of the patterned conductive layer, the Electronic components are electrically connected to the patterned conductive layer through the conductive through holes. 如申請專利範圍第1項所述的封裝結構,更包括:一防焊層,配置於該核心結構層,且覆蓋該圖案化導電層,其中該防焊層暴露出該圖案化導電層的部分該上表面;以及 一表面處理層,配置於該防焊層所暴露出的該圖案化導電層的該上表面上與各該外引腳的該外表面上。 The package structure described in item 1 of the scope of patent application further includes: a solder mask layer disposed on the core structure layer and covering the patterned conductive layer, wherein the solder mask layer exposes a portion of the patterned conductive layer The upper surface; and A surface treatment layer is arranged on the upper surface of the patterned conductive layer exposed by the solder mask layer and the outer surface of each of the outer pins.
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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200625575A (en) * 2005-01-12 2006-07-16 Phoenix Prec Technology Corp Superfine-circuit semiconductor package structure
TW200929462A (en) * 2007-12-19 2009-07-01 Raydium Semiconductor Corp Chip, chip manufacturing method, and chip packaging structure

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200625575A (en) * 2005-01-12 2006-07-16 Phoenix Prec Technology Corp Superfine-circuit semiconductor package structure
TW200929462A (en) * 2007-12-19 2009-07-01 Raydium Semiconductor Corp Chip, chip manufacturing method, and chip packaging structure

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