TWI683374B - Die bonding device and manufacturing method of semiconductor device - Google Patents

Abstract

[Problem] To provide a die bonding device that can determine the pre-maintenance time without complicating the device configuration of the die bonding device.　　 [Solution Means] The die bonding apparatus is provided with: a bonding portion that bonds the crystal grains supplied from the crystal grain supply portion to the substrate supplied from the substrate supply portion; and a control portion that controls the bonding portion. The control unit (a) photographs the substrate with an imaging device to identify the position of the substrate, and (b) photographs the substrate and the die bonded to the substrate with the imaging device to identify the substrate and The position of the die bonded to the substrate, inspecting the relative position of the substrate and the die, (c) according to the position of the substrate identified in (a) and the position of the substrate identified in (b), Diagnose the fixed state of the board.

Description

Die bonding device and manufacturing method of semiconductor device

The present disclosure relates to a die bonding device, which can be applied to a die bonding device having a self-diagnostic function, for example.

As part of the manufacturing process of semiconductor devices, there is a process of mounting a semiconductor wafer (hereinafter, simply referred to as a die.) on a wiring board or lead frame (hereinafter, simply referred to as a substrate.) As part of the process, there is a process of dividing a die from a semiconductor wafer (hereinafter, simply referred to as a wafer.) (a dicing process) and a bonding process of mounting the divided die on a substrate. The semiconductor manufacturing device used in the bonding process is a die bonding device such as a die bonder. [Prior Technical Literature] [Patent Literature]

[Patent Document 1] Japanese Patent Laid-Open No. 7-141021

[Problems to be solved by the present invention]

In the conventional die bonder, it is impossible to know that the device is malfunctioning until a defective product occurs. Therefore, in order to prevent defective joints caused by poor operation of the device, pre-maintenance of the die bonder is carried out periodically or according to the production number. However, in this method, it is necessary to increase the safety margin in order to completely prevent defects, and therefore, the increase in the number of maintenance will cause a decrease in productivity.

An object of the present invention is to provide a die bonding device that can determine the pre-maintenance time without complicating the device configuration of the die bonding device.　　 Other topics and novel features can be clearly seen from the description in this manual and the attached drawings. [Means to solve the problem]

The following is a brief description of the representative of the present invention. That is, the die bonding apparatus includes: a die supply portion; a substrate supply portion; and a bonding portion, which bonds the die supplied from the die supply portion to the substrate supplied from the substrate supply portion Bonded to the crystal grains of the substrate; and a control section to control the crystal grain supply section and the substrate supply section and the bonding section. The bonding portion includes a bonding head including a chuck that attracts the crystal grains; and a first imaging device that can image the substrate and the crystal grains bonded to the substrate. The control unit (a) photographs the substrate with the first imaging device to identify the position of the substrate, and (b) photographs the substrate and the die bonded to the substrate with the first imaging device , Identify the position of the substrate and the die bonded to the substrate, check the relative position of the substrate and the die, (c) according to the position of the substrate identified in (a) and the identification in (b) The position of the substrate to diagnose the fixed state of the substrate. [Effect of invention]

According to the above-mentioned die bonding device, the pre-maintenance time can be determined without complicating the device configuration of the die bonding device.

As a result of the review of the method for accurately determining the timing of the pre-maintenance, the inventors and others have obtained the following insights: using the identification results during continuous operation (during production) and diagnosing the mechanism that affects the accuracy of joining, etc. To judge the period. The present invention was completed based on this new insight.

For example, when the substrate cannot be fixed normally, the joining accuracy is unstable. Whether the substrate is fixed normally can be judged by more than two identifications. In addition, by comparing the position and stability of the crystal grains before bonding and the appearance results of the crystal grains after bonding, the process of poor state is limited.

Specifically, although the identification of the substrate is usually performed before and after bonding (visual inspection), for example, it is possible to perform a comparison before and after to diagnose the substrate fixing state, or to monitor the position of the crystal grain on the back of the crystal grain and diagnose before bonding The pickup state and bonding state of the crystal grains.

Thereby, without adding a new mechanism or the like, defects of the mechanism that affects the joining accuracy can be found. In addition, the timing of pre-maintenance can be correctly judged, and productivity can be improved without degrading quality.

Hereinafter, the embodiment and the modification will be described using the drawings. However, in the following description, the same symbols are given to the same constituent elements, and repeated explanations are omitted. In addition, although the drawings are for illustrative purposes, the widths, thicknesses, shapes, etc. of the parts may be schematically shown in comparison with the actual form, but after all, they are only examples and do not limit the interpretation of the present invention. [Example]

FIG. 1 is a schematic top view of the die bonder of the embodiment. FIG. 2 is a schematic side view for explaining the schematic configuration and operation of the bonding head and its peripheral portion seen from the arrow A shown in FIG. 1.

The die bonder 10 is a die bonder having a single conveying path and a single bonding head. The die bonder 10 roughly includes a die supply unit 1 that supplies the mounted die D to a product area where one or a plurality of final one packages including wiring are printed (hereinafter, referred to as a package area P). ) (In FIG. 1, 15 parts)" substrate 9; the bonding portion 4, picking up the crystal grain D from the crystal grain supplying portion 1, and bonding it to the substrate 9 or the bonded crystal grain D; transport Section 5, which transports the substrate 9 to the mounting position; substrate supply section 6, which supplies the substrate 9 to the transport section 5; substrate transfer section 7, which receives the mounted substrate 9; and control section 8, which monitors and controls the operation of each section .

First, the die supply unit 1 includes: a wafer holding table 12 that holds a wafer 11 having a plurality of grades of crystal grains D; and a push-up unit 13 that pushes the crystal grains D up from the wafer 11 As shown by the dotted line. In the die supply unit 1, the wafer holding table 12 is moved in the XY direction by a driving means (not shown) disposed at the lower part thereof, and when picking up the die D from the wafer 11, a predetermined The die is moved so as to overlap with the push-up unit 13 on the plane.

The bonding part 4 has a chuck 42 that attracts and holds the crystal grains D stacked on the push-up unit 13 at the front end, and has: a bonding head 41 that picks up the crystal grains D and joins it to the substrate 9 that has been transported Package area P; Y drive unit 43 moves the bonding head 41 in the Y direction; a substrate recognition camera (first imaging device) 44 captures the position recognition mark (not shown) of the package area P of the substrate 9 being transported To identify the joining position of the die D to be joined; and a die recognition camera (second camera device) 45 to photograph the back of the picked die D to identify the position of the die. The picking is performed according to the classification map, which indicates the level of the crystal grains possessed by the wafer 11. The classification map is stored in the control unit 8 in advance. In addition, the bonding head 41 has drive units (not shown) that move the chuck 42 up and down and move in the X direction, and can move up, down, left, and right as indicated by arrows in FIG. 2.

With such a configuration, the bonding head 41 corrects the pickup position and posture based on the imaging data of the die recognition camera 45, picks up the die D, and joins the die D to the substrate based on the imaging data of the substrate recognition camera 44 Package area 9 of 9.

The transport unit 5 includes two transport units that transport the substrate 9. For example, the substrate 9 is moved by a conveying belt (not shown) provided in two conveying units.

With such a configuration, the substrate 9 is placed on the transfer path 51 by the substrate supply section 6 and moves to the bonding position along the transfer unit. After bonding, it moves to the substrate transfer section 7. In addition, after that, moving from the substrate carrying-out portion 7 toward the substrate supply portion 6 allows the die to be bonded to another package area of the substrate 9 or to be further bonded to the die. A plurality of times of reciprocation between the substrate supply unit 6 and the substrate carrying-out unit 7 may be performed to join the crystal grains in multiple layers.

Next, referring to FIGS. 3 and 4, the configuration of the crystal grain supplying section 1 will be described. Fig. 3 is a diagram showing an external perspective view of a crystal grain supplying portion. FIG. 4 is a schematic cross-sectional view showing the main part of the crystal grain supplying part.

The die supply unit 1 includes a wafer holding table 12 that moves in the horizontal direction (XY direction), and a push-up unit 13 that moves in the vertical direction. The wafer holding table 12 includes an expansion ring 15 that holds the wafer ring 14 and a support ring 17 that is held by the wafer ring 14 and is horizontally positioned, followed by a dicing tape 16 with a plurality of dies D. The push-up unit 13 is arranged inside the support ring 17.

When the crystal grain supply part 1 is stacked on the crystal grain D, the expansion ring 15 holding the wafer ring 14 is lowered. As a result, the dicing tape 16 held on the wafer ring 14 is elongated, and the interval between the dies D is enlarged. By the push-up unit 13, the dies D are pushed up from below the dies D, so that the pick-up of the dies D is improved . A film-like bonding material called a die attach film (DAF) 18 is attached between the wafer 11 and the dicing tape 16. In the wafer 11 having the die attach film 18, the dicing is performed on the wafer 11 and the die attach film 18. Therefore, in the peeling process, the wafer 11 and the die attach film 18 are peeled from the dicing tape 16.

The control unit 8 is provided with: a memory, a stored program (software), which monitors and controls the operations of each part of the die bonder 10; and a central processing unit (CPU), which executes the program stored in the memory . For example, the control unit 8 captures various information such as image information from the substrate recognition camera 44 and the substrate recognition camera 44, the position of the bonding head 41, and controls the movement of each constituent element such as the bonding operation of the bonding head 41.

As described above, the die bonder 10 has: a wafer recognition camera 24 to recognize the posture of the die D on the wafer 11; a die recognition camera 45 to photograph the back of the picked die D to identify The position of the die; and the substrate identification camera 44 to identify the installation position on the bonding platform BS. It is necessary to correct the posture deviation between the identification cameras, which is related to the wafer identification camera 24 and the die identification camera 45 picked up by the bonding head 41, and the substrate identification camera 44 bonded to the mounting position by the related bonding head 41 . In this embodiment, the wafer recognition camera 24 is used to locate the die D, and the substrate recognition camera 44 is used to locate the package area P and the relative position of the package area P and the die bonded to the package area P "Check.

FIG. 5 is a flowchart illustrating the die bonding process in the die bonding device of the embodiment. In the die bonding process of the embodiment, first, the control unit 8 takes out the wafer ring 14 holding the wafer 11 from the wafer cassette and places it on the wafer holding table 12, and transports the wafer holding table 12 To the reference position (wafer loading) for picking up the die D. Next, the control unit 8 performs fine adjustment so that the arrangement position of the wafer 11 accurately matches the reference position from the image acquired by the wafer recognition camera 24.

Next, the control unit 8 moves the wafer holding table 12 on which the wafer 11 is placed at a predetermined pitch and horizontally holds it, thereby arranging the initially picked die D at the pickup position (die transfer ). The wafer 11 is an inspection device, such as a detector, which generates image data indicating good and bad for each wafer by inspection for each die, and stores it in the memory device of the control unit 8. The determination that the grain D of the pickup object is a good product or a bad product is performed by drawing data. The control unit 8 moves the wafer holding table 12 on which the wafer 11 is placed at a predetermined pitch when the die D is a defective product, and then arranges the picked die D at the pickup position, And skip the grain D of defective products.

The control unit 8 uses the wafer recognition camera 24 to photograph the main surface (upper surface) of the pick-up die D, and calculates the positional deviation of the pick-up position of the pick-up die D from the acquired image Displacement. The control unit 8 moves the wafer holding table 12 on which the wafer 11 is mounted based on the positional deviation amount, and correctly arranges the pick-up die D at the pick-up position (die confirmation (step S1)).

The control unit 8 is attached to the substrate supply unit 6 and places the substrate 9 on the transfer path 51 (substrate loading). The control unit 8 moves the substrate 9 to the bonding position (substrate transfer).

In order to perform the bonding, the control unit 8 photographs the substrate by the substrate recognition camera 44 before the bonding, recognizes the position of the package area P of the substrate 9 and performs positioning (substrate recognition (step S4)).

The control unit 8 picks up the die D from the dicing tape 16 by the bonding head 41 including the chuck 42 after the die D to be picked up is correctly placed at the pickup position (step S2), and the substrate according to step S4 As a result of the identification, the die bonded to the package area P of the substrate 9 or the die that has been bonded to the package area P of the substrate 9 (step S5). The position of the die D can also be checked by the die recognition camera 45 photographing the back of the picked die D (step S3). This step is optional.

The control unit 8 checks whether the bonding position is correct after joining the crystal grains D. In order to check the bonding and mounting results, the control unit 8 again photographs the package area P of the substrate 9 by the substrate recognition camera 44 and recognizes the position of the package area P of the substrate 9 (step S6). The control unit 8 captures the die D by the substrate recognition camera 44 and performs the position recognition of the die D (step S7), and the position of the die D after bonding from the substrate recognition and die recognition results an examination. The control unit 8 compares with the previously registered joint position, and performs numerical output and inspection/judgment.

The control unit 8 performs a self-diagnosis described later (step S9), and if there is no abnormality, the next engagement is performed (step S8).

Thereafter, according to the same procedure, the dies D will be bonded to the package area P of the substrate 9 one by one. When the bonding of one substrate is completed, the substrate 9 is moved to the substrate carrying-out portion 7 (substrate transfer), and the substrate 9 is transferred to the substrate carrying-out portion 7 (substrate unloading).

In addition, according to the same procedure, the crystal grains D will be peeled from the dicing tape 16 one by one. When the picking up of all the dies D with defective products removed is completed, the dicing tape 16 and the wafer ring 14 holding the dies D in the shape of the wafer 11 are unloaded to the wafer cassette.

Next, the self-diagnosis will be described using FIG. 6 (step S9). FIG. 6 is a diagram showing the results of substrate identification and appearance inspection. FIG. 6(A) shows the case where the substrate is not fixed sufficiently, and FIG. 6(B) shows the case where the substrate is fixed normally. The horizontal axis in FIG. 6 represents the number of joinings (the number of starts), and the vertical axis represents the position of the substrate relative to the reference (μm). The number of joints in Fig. 6(B) is from 1 to 304, and the number of joints in Fig. 6(A) is from 870 to 1000.

The controller 8 compares the substrate recognition results before and after bonding to calculate the amount of positional movement of the substrate. If the amount of positional movement of the substrate is more than a predetermined amount, it determines that the substrate is insufficiently fixed and issues a warning.

Specifically, the control unit 8 compares the position of the package area P (P _S4 ) in the substrate identification in step _S4 and the position (P _S6 ) of the package area P in the substrate identification in step S6, and calculates the difference (substrate The amount of position movement). In FIG. 6(A) where the number of starts is large, the variations of P _S4 and P _{S6 are} large, and the amount of positional movement of the substrate is also large. In FIG. 6(B) where the number of starts is small, the variation of P _S4 and P _S6 is smaller than that of FIG. 6(A), and the amount of positional movement of the substrate is also small. In addition, in FIG. 6(A) and (B), although the positional movement amount of the substrate is not shown, the positional movement amount of the substrate is the difference between the positions of the substrates before and after bonding, and can be easily grasped from the figure. As shown in FIG. 6(A), the control unit 8 determines that the substrate is insufficiently fixed when the positional movement amount of the substrate is large, and as shown in FIG. 6(B), when the positional movement amount is small Next, it is determined that the substrate is fixed properly.

For example, the control unit 8 determines that the substrate is sufficiently fixed (normal) when the positional movement amount of the substrate is 1 to 5 μm, and determines the general deviation range when it is 5 to 10 μm, and is more than 10 μm , It is determined that the substrate is insufficiently fixed. When it is determined that the substrate is insufficiently fixed, for example, it is thought that the mechanical clamping is insufficient, the fixing due to suction is insufficient, and the camera/lens is insufficiently fixed. If the mechanical clamping is insufficient, re-examine the height. If the fixation is insufficient, the leak or piping bend will be reviewed again. If the camera and lens are not fixed sufficiently, the looseness or peeling will be reviewed.

According to the above embodiments, it is possible to provide a die bonder and a bonding method that can determine the pre-maintenance time without complicating the device configuration of the die bonder. Thereby, a high-precision die bonder can be provided, and high precision can be maintained.

<Modifications> 　　The following are some representative modifications. In the description of the following modified examples, the same symbols as those in the above-mentioned embodiment are used for the parts having the same configuration and function as those described in the above-mentioned embodiment. However, the descriptions of the parts are within the scope of no technical contradiction, and the descriptions in the above embodiments are appropriately cited. In addition, to the extent that there is no technical contradiction, a part of the above-mentioned embodiments and all or a part of the plurality of modifications can be used in appropriate combination.

(Modification 1) In the embodiment, step S3 is optional (OPTION), but in modification 1, step S3 is performed. Modification 1 is the same as the embodiment except for self-diagnosis. With reference to Fig. 7, self-diagnosis (Step SA) concerning Modification 1 will be described. FIG. 7 is a flowchart showing the joining operation of Modification 1. FIG.

The control unit 8 performs position inspection of the back surface of the die before bonding (depending on the result of the position inspection, position correction may or may not be performed). The position of the crystal grain D in the position inspection of the back surface of the crystal grain in step S3 is compared with the position of the registered crystal grain, and the difference (the amount of movement of the crystal grain position) is calculated.

For example, the control unit 8 determines that the crystal grain identification and pickup are normal when the positional movement amount of the crystal grains is 1 to 5 μm, and the general deviation range is determined to be 10 μm or more when it is 5 to 10 μm. Next, it is determined that the pickup position is abnormal. When it is determined that the pickup position is abnormal, for example, it is considered that the grain recognition is poor or the pickup is shifted. If the grain recognition is poor, the resolution and registration pattern are reviewed. If the pickup is shifted, the suction pressure is reviewed. , Timing, height.

(Modification 2) In the embodiment, step S3 is optional (OPTION), but in modification 2, step S3 is performed in the same manner as modification 1. Modification 2 is the same as the embodiment except for self-diagnosis. The self-diagnosis concerning modification 2 (steps S9, SB) will be described using FIGS. 8 and 9.

FIG. 8 is a flowchart showing the joining operation of Modification 2. FIG. FIG. 9 is a diagram showing the inspection result of the back surface of the die and the appearance inspection result when the pickup is abnormal and the bonding is normal. 9, the horizontal axis represents the number of joinings (the number of starts), and the vertical axis represents the position of the crystal grains relative to the reference (μm). The number of joints in Fig. 9 is 1 to 320.

The control unit 8 compares the results of the identification of the crystal grains before and after bonding, and calculates the amount of movement of the position of the crystal grains. If the position of the back surface of the crystal grains before bonding differs greatly from the appearance inspection results, it is determined that the substrate is fixed or the bonding process is Defective and warn.

Specifically, the control unit 8 compares the position of the crystal grain D (P _S3 ) in the inspection of the back surface of the crystal grain in step _S3 with the position of the crystal grain (P _S7 ) in the identification of the crystal grain position in step S7, and calculates the Poor (amount of movement of the grain). In FIG. 9, the direction of change of _PS3 and _PS7 has the same tendency, and the amount of position shift is relatively small.

For example, the control unit 8 determines that the substrate is sufficiently fixed (normal) when the positional displacement of the crystal grains is 1 to 5 μm (when the positional deviation of the crystal grains from the reference before and after bonding is the same tendency) And the bonding is normal. In the case of 5 to 10 μm (before and after bonding, the positional deviation of the crystal grains from the reference has the same tendency), it is judged as a general deviation range, and when it is 10 μm or more, it is judged that the substrate is not fixed Fully or abnormally engaged. The control unit 8 compares the results of substrate recognition before and after bonding to calculate the positional displacement of the substrate when it is determined that the substrate is insufficiently fixed or abnormally bonded, and determines if the positional displacement of the substrate is more than a predetermined amount Insufficient fixation for the substrate. The control unit 8 determines that the bonding is abnormal when it is determined that the substrate fixing is normal. When it is determined that the joint is abnormal, it is considered that the joint head or the chuck is abnormal, or the joint crimping is poor. If the joint head or chuck is abnormal, check the mechanical backlash, and if the joint crimp is not good, re-check the height or temperature.

(Modification 3) Although the embodiment is configured to pick up the die D from the wafer with the bonding head 41, the modification 3 is to shorten the processing distance of the bonding head 41 and shorten the processing time. An intermediate platform 31 is provided between the part 1 and the joint part 4.

10 and 11, a die bonder according to Modification 3 will be described. FIG. 10 is a schematic top view of a die bonder of Modification 3. FIG. FIG. 11 is a schematic side view for explaining the schematic configuration and operation of the pickup head or the bonding head and its peripheral portion seen from the arrow A shown in FIG. 10.

The die bonder 10A of the modification is a die bonder having a single conveying path and a single bonding head. The die bonder 10A roughly includes: a die supply portion 1 that supplies the mounted die D to the package area P of the substrate 9; a pickup portion 2 that picks up the die from the die supply portion 1; a positioning portion 3, the middle Temporarily place the picked die D; the bonding part 4 picks up the die D of the positioning part and joins it to the package area P of the substrate 9 or the die D that has been joined; the transfer part 5 will The substrate 9 is transferred to the mounting position; the substrate supply section 6 supplies the substrate 9 to the transfer section 5; the substrate transfer section 7 receives the mounted substrate 9; and the control section 8 monitors and controls the operation of each section.

The pickup section 2 has a chuck 42 that attracts and holds the crystal grains D stacked on the push-up unit 13 to the front end, and has: a pickup head 21 that picks up the crystal grains D and places it on the positioning section 3; and The Y drive section 23 of the pickup head moves the pickup head 21 in the Y direction. The picking is performed according to the classification map, which indicates the level of the crystal grains possessed by the wafer 11. The classification map is stored in the control unit 8 in advance. In addition, the pick-up head 21 includes drive units (not shown) that move the chuck 22 up and down and move in the X direction, and can move up, down, left, and right as shown by arrows in FIG. 2.

The positioning part 3 includes: an intermediate platform 31 to temporarily place the die D; and a platform identification camera 32 for identifying the die D on the intermediate platform 31.

The bonding part 4 has the same structure as the pickup head 21 and has: a bonding head 41 that picks up the die D from the intermediate stage 31 and bonds it to the package area P of the substrate 9 that is being transported; a chuck 42 that sucks The die D mounted on the front end of the bonding head 41 is held; the Y driving part 43 moves the bonding head 41 in the Y direction; and the substrate recognition camera 44 recognizes the position of the package area P of the substrate 9 that has been transferred (not recognized (Illustration) Take a picture and identify the bonding position of the die D to be bonded. BS is the joint area. In addition, the bonding head 41 includes drive units (not shown) that move the chuck 42 up and down and move in the X direction, and can move up, down, left, and right as indicated by arrows in FIG. 11.

With such a configuration, the bonding head 41 corrects the pickup position and posture based on the imaging data of the platform recognition camera 32, and picks up the die D from the intermediate platform 31, and the die D according to the imaging data of the substrate recognition camera 44 It is bonded to the package region P of the substrate 9.

Next, the die bonding process concerning the die bonder of Modification 3 will be described using FIG. 5. The die bonding process of Modification 3 is the same as the embodiment except for the pickup in step S2.

The control unit 8 arranges the pick-up die D at the pick-up position correctly, and then picks up the die D from the dicing tape 16 by the pick-up head 21 including the chuck 22 and places it on the intermediate platform 31 (die deal with). The control unit 8 takes pictures by the platform recognition camera 32 and detects the posture deviation (rotational deviation) of the die mounted on the intermediate platform 31. The control unit 8 rotates the intermediate platform 31 with a parallel surface on a mounting surface having an installation position by a rotation driving device (not shown) provided on the intermediate platform 31 when there is a deviation in posture To correct posture deviation.

The control unit 8 picks up the die D from the intermediate stage 31 by the bonding head 41 including the chuck 42 (step S2), and is bonded to the package area P of the substrate 9 or the crystal that has been bonded to the package area P of the substrate 9 Grains (step S5). The back surface of the picked-up die D may also be photographed by the die recognition camera 45 to check the position of the back surface of the die (step S3).

The die bonder of Modification 3 can perform the same self-diagnosis as the embodiment and Modifications 1,2. In addition, since the die adapter 10A is provided with the platform recognition camera 32, the platform recognition camera 32 may be used in place of the die recognition camera 45 to perform self-diagnosis of Modifications 1 and 2. It is also possible to use the identification camera 25 instead of the die identification camera 45 or to use it together with the die identification camera 45, which takes pictures of the back of the die picked up by the pickup head.

Although the invention developed by the inventors has been specifically described above based on the embodiments, examples, and modified examples, the present invention is not limited to the above-described embodiments, examples, and modified examples, and of course various changes can be made.

In Modifications 1 and 2, although a die recognition camera that photographs the back of the die is used to identify the position of the die before bonding, a wafer recognition camera may be used.

Alternatively, it may be a flip chip bonder, which is provided with a driving part for rotating the chuck, and is provided as a flip head that can reverse the picked up and down crystal grains. Also, it may be a die bonder equipped with a mounting unit and a transport path that includes a picking unit and a positioning unit and a joining unit, or may be a mounting unit including a picking unit and a positioning unit and a joining unit And a single-channel die bonder.

1‧‧‧ Die supply part 11‧‧‧ Wafer 12‧‧‧ Wafer holding table 13‧‧‧Push up unit 2‧‧‧ Pick up part 21‧‧‧ Pick up head 22‧‧‧Chuck 23‧‧ ‧Pickup Y drive part 3‧‧‧Positioning part 31‧‧‧Intermediate platform 32‧‧‧Platform recognition camera 4‧‧‧Joint part 41‧‧‧Joint head 42‧‧‧Chuck 43‧‧‧Joint head Y drive unit 44‧‧‧ substrate recognition camera 5‧‧‧ transport unit 51‧‧‧ transport lane 6‧‧‧ substrate supply unit 7‧‧‧ substrate transport unit 8‧‧‧ control unit 9‧‧‧ substrate 10‧‧ ‧ Die Bonder BS‧‧‧ Bonding platform D‧‧‧ Die P‧‧‧ Package area

[FIG. 1] A schematic side view showing the die bonder of the embodiment. [FIG. 2] A schematic side view for explaining the movement of the bonding head and the like seen from the direction of arrow A shown in FIG. 1. [FIG. 3] FIG. 4 is a schematic cross-sectional view of the main part of the die supply part. [FIG. 5] A flowchart showing the bonding operation of FIG. 1. [FIG. 6] A figure showing the results of substrate recognition before and after bonding. [FIG. 7] A flowchart showing the bonding operation of the modification 1 [FIG. 8] A flowchart showing the bonding operation of the modification 2 [FIG. 9] A diagram showing the results of the grain identification before and after bonding [FIG. 10] showing a modification 3 Overall outline of the die bonder [FIG. 11] A schematic side view for explaining the movement of the pickup head, bonding head, etc. seen from the direction of arrow A shown in FIG.

Claims (14)

A die bonding apparatus is provided with: a die supply portion; a substrate supply portion; a bonding portion that bonds the die supplied from the die supply portion to the substrate supplied from the substrate supply portion or has been bonded to On the crystal grains of the substrate; and a control section that controls the crystal grain supplying section and the substrate supplying section and the bonding section, the bonding section is provided with: a bonding head having a chuck that attracts the crystal grains; and 1. An imaging device that can photograph the substrate and the die bonded to the substrate. The control unit (a) photographs the substrate with the first imaging device to recognize the position of the substrate, (b) The first imaging device photographs the substrate and the crystal grains bonded to the substrate, recognizes the positions of the substrate and the crystal grains bonded to the substrate, and checks the relative positions of the substrate and the crystal grains, (c) Based on the position of the substrate identified in (a) and the position of the substrate identified in (b), the fixed state of the substrate is diagnosed. For example, in the die bonding device of claim 1, the control unit calculates the position of the substrate identified in (a) and The difference in the positions of the substrates identified in (b) above is the amount of movement of the substrate position. When the amount of movement of the substrate position is a predetermined amount or more, it is determined that the fixing of the substrate is insufficient. A die bonding apparatus is provided with: a die supply portion; a substrate supply portion; a bonding portion that bonds the die supplied from the die supply portion to the substrate supplied from the substrate supply portion or has been bonded to On the crystal grains of the substrate; and a control section that controls the crystal grain supplying section and the substrate supplying section and the bonding section, the bonding section is provided with: a bonding head having a chuck that attracts the crystal grains; and 2 An imaging device capable of photographing the back surface of the die picked up by the bonding head, the control unit is (a) photographing the die with the second imaging device to identify the position of the die, (b ) According to the position of the die identified in (a) above and the position of the pre-registered die, diagnose the pickup deviation of the die or the state of die identification, and calculate the die identified in (a) above The difference between the position and the position of the pre-registered crystal grain is the amount of movement of the crystal grain position. When the amount of movement of the crystal grain position is greater than or equal to a predetermined amount, it is determined that the pickup of the crystal grain is shifted or the crystal grain recognition is poor. A die bonding apparatus is provided with: a die supply portion; a substrate supply portion; a bonding portion that bonds the die supplied from the die supply portion to the substrate supplied from the substrate supply portion or has been bonded to On the crystal grains of the substrate; and a control part that controls the crystal grain supply part and the substrate supply part and the bonding part, the bonding part is provided with: a bonding head provided with a chuck that attracts the crystal grain; first The imaging device can image the substrate and the die bonded to the substrate; and the second imaging device can image the back surface of the die picked up by the bonding head. The control unit is (a) to The first imaging device photographs the substrate to identify the position of the substrate, (b) photographs the die with the second imaging device, identifies the position of the die, and (c) uses the first imaging device, Photographing the substrate and the crystal grains bonded to the substrate, identifying the positions of the substrate and the crystal grains bonded to the substrate, and checking the relative positions of the substrate and the crystal grains, (d) according to (b) The position of the identified die and the position of the identified die in (c) above are used to diagnose the substrate fixing state and the bonding state. For example, in the die bonding apparatus of claim 4, the control unit calculates the difference between the position of the grain identified in (b) and the position of the grain identified in (c). The amount of grain position movement is determined to be insufficient fixing of the substrate or abnormal bonding when the amount of grain position movement is equal to or greater than a predetermined amount. According to the die bonding apparatus of claim 5 of the patent application range, the control unit calculates the position of the substrate identified in (a) and the aforementioned (a) when it is determined that the substrate is insufficiently fixed or the bonding is abnormal. c) The difference between the positions of the substrates identified in c) is the amount of movement of the substrate position. When the amount of movement of the substrate position is greater than or equal to a predetermined amount, it is determined that the substrate is insufficiently fixed, and the amount of movement at the position of the substrate is less than the predetermined amount In this case, it is determined that the joint is abnormal. The die bonding apparatus according to any one of claims 1 to 6, wherein the die supply portion holds a wafer ring, and the wafer ring holds a dicing tape to which the die is attached, The bonding head picks up the crystal grains from the dicing tape. For example, the die bonding device of any one of the items 1 to 6 of the patent scope, Among them, a pick-up portion and a positioning portion are further provided between the die supply portion and the joint portion, the pick-up portion has a pick-up head provided with a chuck that attracts the die, and the positioning portion has an intermediate platform, The intermediate stage is configured to mount the die picked up by the pickup head, and the bonding head is configured to pick up the die from the intermediate stage. A method of manufacturing a semiconductor device includes: (a) a process of photographing a substrate and identifying the position of the substrate; (b) a process of bonding a die to the substrate or a die that has been bonded to the substrate (C) photographing the substrate and the crystal grains bonded to the substrate, identifying the positions of the substrate and the crystal grains bonded to the substrate, and checking the relative position of the substrate and the crystal grains; and (d ) A project to diagnose the fixed state of the board based on the position of the board identified in the aforementioned (a) project and the position of the board identified in the aforementioned (c) project. For example, in the method of manufacturing a semiconductor device according to item 9 of the patent application scope, in the (d) project, the position of the substrate identified in the (a) project and the position of the substrate identified in the (c) project are calculated Substrate position The amount of displacement is determined to be insufficient fixing of the substrate when the amount of displacement of the substrate position is a predetermined amount or more. A method of manufacturing a semiconductor device includes: (a) a process of photographing the back surface of a die picked by a bonding head to identify the position of the die; (b) bonding the die to the substrate or The process of being bonded on the die of the aforementioned substrate; and (c) Diagnosing the pick-up deviation of the die or die identification based on the position of the die identified in (a) and the position of the pre-registered die State, and calculate the difference between the position of the grain identified in (a) and the position of the previously registered grain, that is, the amount of movement of the grain position. If the amount of movement of the grain position is more than a predetermined amount, determine It is the process of the aforementioned pick-up shift of the die or poor die recognition. A method of manufacturing a semiconductor device includes: (a) photographing a substrate and identifying the position of the substrate; (b) photographing the back surface of the die picked by the bonding head to identify the position of the die Engineering; (c) the process of bonding the die to the substrate or the die that has been bonded to the substrate; (d) photographing the substrate and the die bonded to the substrate to identify the substrate and The process of inspecting the position of the die bonded to the substrate, and checking the relative position of the substrate and the die; and (e) Based on the position of the die identified in the aforementioned (b) process and the position of the die identified in the aforementioned (d) process, diagnose the substrate identification and bonding state. For example, in the method of manufacturing a semiconductor device according to item 12 of the patent application scope, in the above (e) process, the position of the crystal grain identified in the above (b) and the position of the crystal grain identified in the (d) above are calculated The difference is the amount of movement of the crystal grain position. When the amount of movement of the crystal grain position is a predetermined amount or more, it is determined that the substrate is insufficiently fixed or the bonding is abnormal. For example, in the method of manufacturing a semiconductor device according to item 13 of the patent application, the aforementioned (e) process is to calculate the substrate identified in the aforementioned (a) process when it is determined that the aforementioned substrate is insufficiently fixed or the bonding is abnormal. The difference between the position and the position of the substrate identified in the aforementioned (d) project is the amount of substrate position movement. When the amount of substrate position movement is more than a predetermined amount, it is determined that the substrate is insufficiently fixed and the amount of movement at the substrate position If the predetermined amount is not reached, it is determined that the engagement is abnormal.

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