TWI661067B - Manifold for vacuum evaporation device - Google Patents

Abstract

The present invention provides a manifold for a vacuum evaporation device that improves the utilization efficiency of a vapor deposition material. The manifold for a vacuum evaporation device is a manifold for an in-line vacuum evaporation device. A nozzle row (14F, 14F, 14F, 14F) is provided on a substrate opposing surface (11a) of a single manifold (11) opposite to the substrate (12). 14R), the nozzle rows (14F, 14R) are provided with a plurality of ejection nozzles (13) having nozzle openings protruding from a predetermined nozzle pitch (P) in the width direction of the substrate (12), and the nozzle rows (14F, 14R) The substrate (12) is arranged at a predetermined nozzle row interval (Lp) in the moving direction of the substrate (12). The nozzles (13) for ejection of the nozzle row (14R) in the rear of the substrate (12) and the substrate (12) are moved forward. The nozzles (13) for ejection of the nozzle rows (14F) are relatively arranged in the moving direction of the substrate (12).

Description

Manifold for vacuum evaporation device

The present invention relates to a manifold for a vacuum evaporation device suitable for manufacturing an organic EL (electroluminescence) element, and uses a linear source for inline evaporation.

On-line vapor deposition is a method in which a manifold, which is a linear source of vapor deposition material, is arranged opposite to a vapor deposition substrate that moves at a fixed speed in the width direction, and the evaporation material is ejected from a nozzle for ejection provided on the manifold to evaporate. The material is adhered to the surface of the vapor-deposited substrate.

In the vacuum vapor deposition apparatus of the in-line vapor deposition method, Patent Document 1 discloses an apparatus in which a manifold for a linear source is used as a crucible for heating and vaporizing a vapor deposition material, and the crucible is formed on the upper surface of the crucible along the length of the crucible. A plurality of ejection nozzles are formed in the lateral direction, and a nozzle opening for ejecting a vapor deposition material is formed in each ejection nozzle.

Patent Document 1: Japanese Patent Gazette No. 4380319 (Figure 1)

However, it is necessary to improve the utilization efficiency (the ratio of the adhesion amount to the evaporation amount) of a high-priced vapor deposition material such as an organic EL. Therefore, it can be considered that the nozzle for ejection is brought close to the vapor deposition substrate, and the vapor deposition distance between the nozzle opening as the orifice and the vapor deposition substrate can be shortened. When the vapor deposition distance is made short, in order to ensure the uniformity of the adhesion film thickness, it is necessary to increase the nozzle openings, which causes the nozzles for ejection to approach each other. In addition, in order to adjust the ejection amount, the nozzle opening of the ejection nozzle is used as a throttle hole for closing the outlet. Film thickness distribution of set. Therefore, it is difficult to make the nozzle openings close to each other.

As a countermeasure, the diameter of the nozzle opening can be made smaller, but if the diameter of the nozzle opening is made smaller, the conductivity of the discharge flow path becomes smaller. Therefore, in order to ensure a predetermined vapor deposition rate, it is necessary to increase the evaporation temperature (heating temperature) of the vapor deposition material in the crucible. However, if the vaporization temperature is increased, some vapor deposition materials are likely to be deteriorated and the running cost may be increased.

In order to solve the above-mentioned problems, an object of the present invention is to provide a manifold for a vacuum deposition apparatus capable of improving the utilization efficiency of a vapor deposition material.

The invention according to the first aspect provides a manifold for a vacuum evaporation device, which is a manifold for an in-line vacuum evaporation device, and is disposed opposite to a vapor deposition substrate moving at a fixed speed, from a plurality of nozzles provided on the opposite surface. The vapor deposition material is sprayed out of the mouth, and the vapor deposition material is adhered to the surface of the vapor deposition substrate. A row of nozzles is provided on the opposite surface of the single manifold opposite the vapor deposition substrate, and these nozzle lines are arranged along the vapor deposition. A plurality of ejection nozzles having these nozzle openings are protrudingly provided at a predetermined nozzle pitch in the width direction of the substrate, and a plurality of nozzle rows are arranged at predetermined intervals in the moving direction of the vapor deposition substrate. The nozzles for ejection in the nozzle row and the nozzles for ejection in the rear nozzle row are relatively arranged in the moving direction of the vapor deposition substrate.

The invention according to the second aspect provides a manifold for a vacuum vapor deposition device. The manifold is an on-line vacuum vapor deposition device. The manifold is disposed opposite to a vapor deposition substrate moving at a fixed speed, and a plurality of manifolds are provided on the manifold. Each nozzle port sprays out a vapor deposition material and makes the vapor deposition material adhere to the surface of the vapor deposition substrate, wherein a row of nozzles is provided on a single manifold opposite to the vapor deposition substrate, and these nozzle arrays A plurality of ejection nozzles having nozzle openings are protruded at predetermined nozzle intervals along a width direction of the vapor deposition substrate, and a plurality of nozzle rows are arranged along the moving direction of the vapor deposition substrate. The nozzles for ejection in the front nozzle row are arranged at predetermined intervals, and the nozzles for ejection in the rear nozzle row are arranged at staggered positions offset by 1/2 of the nozzle pitch with respect to the nozzle row in the forward direction of the vapor deposition substrate.

In the invention according to aspect 3, in addition to the structure described in aspect 1 or 2, when the nozzle pitch of the ejection nozzles of each nozzle row is P, the diameter of the nozzle opening is D ', and the evaporation distance between the nozzle opening and the deposition substrate is When S, D '<P <1.11 × S.

According to the invention of the fourth aspect, in addition to the structure described in any one of the first to third aspects, when the nozzle inner diameter of the discharge nozzle is D (mm), the nozzle length is L (mm), and the diameter of the nozzle opening is D '( mm), the ejection nozzle is at L Satisfying D 'at 9 × D 2.7 × D ² / L, and satisfy D ′ when L <9 × D D / 3.

The invention of the fifth aspect is based on the structure described in any one of the first to fourth aspects, and corresponds to the width of the vapor-deposited substrate. At least one of the plurality of nozzle rows is provided with a closing plug, and the closing plug has a closed end. Nozzle opening of the ejection nozzle on the part side.

According to the invention described in the first aspect, by arranging the respective nozzles for ejection in the front and rear nozzle rows in the moving direction of the vapor deposition substrate, the vapor deposition rate can be improved compared to the case where the nozzle rows are arranged in a row. . Accordingly, even if the diameter of the nozzle opening is reduced to decrease the conductivity of the discharge flow path, a predetermined vapor deposition rate can be secured by arranging a plurality of rows.

According to the invention described in the second aspect, by arranging the ejection nozzles at the front and rear nozzle rows at staggered positions, even if the ejection nozzles ensure a sufficient nozzle pitch in each nozzle row, the vapor deposition can be observed from the front. The nozzles for ejection at the time of the substrate are arranged close to each other, thereby improving the uniformity of the adhesion film thickness. Thereby, the vapor deposition distance between the nozzle for ejection and the vapor deposition substrate can be shortened, and the uniformity of the thickness of the adhered film is not deteriorated, so that the utilization efficiency of the material can be improved.

According to the invention described in Embodiment 3, if the vapor deposition distance is S, the nozzle pitch P of the nozzles for ejection of each nozzle row is made larger than the diameter of the nozzle opening and smaller than S × 1.11, and can achieve ± 5% as a product. Within the film thickness uniformity, vapor deposition was performed.

According to the invention described in the fourth aspect, the ejection nozzle is used through the L Satisfying D 'at 9 × D 2.7 × D ² / L, and satisfy D ′ when L <9 × D In the nozzle for D / 3 ejection, the diffusion state of the evaporation material ejected from the nozzle opening becomes a uniform state according to the cos ⁿ θ rule, so that the uniformity of the adhesion film thickness can be improved.

According to the invention described in claim 5, when the width of the vapor deposition substrate is narrowed, it is possible to suppress the unnecessary discharge of the evaporation material by attaching a stopper to the nozzle opening of the nozzle for ejection on the end side of the nozzle row and closing it, This can reduce operating costs.

11‧‧‧ manifold

11a‧‧‧ Opposite side

12‧‧‧ substrate

12s‧‧‧ substrate

13‧‧‧ Nozzle for ejection

13a‧‧‧Nozzle body

13b‧‧‧End plate

13E‧‧‧ Nozzle for ejection

14F‧‧‧Nozzle row

14R‧‧‧Nozzle row

14Ff‧‧‧Front nozzle row

14Rr‧‧‧Rear nozzle row

14Rf‧‧‧Front nozzle row

14Rr‧‧‧Rear nozzle row

15‧‧‧Nozzle

16‧‧‧ material inlet

17‧‧‧ material introduction tube

18‧‧‧Pressure detection port

19‧‧‧Evaporation rate detection port

21‧‧‧ closed plug

S‧‧‧Evaporation distance

P‧‧‧Nozzle pitch

L‧‧‧ Nozzle length

D‧‧‧Inner diameter

D’ ‧‧‧ caliber

d‧‧‧inner diameter

CL‧‧‧ Centerline

SL‧‧‧Side line

Hm‧‧‧ height

Wm‧‧‧Width

Wn‧‧‧Width

Ws‧‧‧Width

Lm‧‧‧ length

Lp‧‧‧Nozzle row interval

1A to 1C are a first embodiment of a manifold for a vacuum evaporation device according to the present invention. FIG. 1A is a plan view, FIG. 1B is a side view, and FIG. 1C is a front view.

Fig. 2 is a longitudinal sectional view showing a nozzle for ejection.

FIG. 3A and FIG. 3B are illustrations of the vapor deposition film thickness of the vapor deposition by the in-line vapor deposition method, FIG. 3A is a schematic plan view showing the arrangement of the ejection nozzles, and FIG. 3B is a front view showing the film thickness.

FIG. 4 is a front view showing a change in film thickness due to the nozzle pitch of the ejection nozzle, FIG. 4A shows a case of a narrow nozzle pitch, and FIG. 4B shows a case of a wide nozzle pitch.

Fig. 5 is a graph showing the range of the nozzle pitch with respect to the vapor deposition distance in which the film thickness uniformity is less than ± 5%.

Fig. 6 is a coordinate showing the relationship between (the length of the discharge nozzle L) x (the diameter of the nozzle opening D ') / (the diameter of the discharge nozzle D) and the n value of the cos ⁿ θ rule Illustration.

Fig. 7 is a graph showing the relationship between (nozzle orifice diameter D ') / (nozzle nozzle inner diameter D) and the n value of the cos ⁿ θ rule in the discharge nozzle.

Fig. 8 is a plan view showing a second embodiment of a manifold for a vacuum evaporation apparatus according to the present invention.

Figures 9A to 9C show the use of the manifold when the width of the substrate is changed. Figure 9A shows the movement of the substrate along the center line, Figure 9B shows the movement of the substrate along the side line, and Figure 9C shows the installation of a plug. Longitudinal section of the state of the discharge nozzle. And FIG. 10 is a plan view showing a third embodiment of a manifold for a vacuum deposition apparatus according to the present invention.

[Example 1]

Hereinafter, Embodiment 1 of the manifold for a vacuum deposition apparatus of the in-line vapor deposition method of the present invention will be described based on FIGS. 1 to 4.

As shown in FIG. 1 and FIG. 2, in a vacuum vapor deposition chamber maintained in a vacuum state, the manifold 11 is disposed opposite a vapor deposition surface of a substrate (deposition substrate) 12 moving at a constant speed. On the pair of placement surfaces 11a of the manifold 11, nozzle rows 14F and 14R are provided in front and rear of the substrate 12 in the moving direction, respectively. A plurality of ejection nozzles 13 of the nozzle rows 14F and 14R are arranged at a predetermined nozzle pitch in the width direction. P highlight setting. Here, as shown in FIG. 2, the nozzle pitch P refers to the distance between the nozzle opening 15 and the nozzle opening 15 of the discharge nozzle 13 adjacent to each other in the nozzle rows 14F and 14R.

The front and rear nozzle rows 14F and 14R have nozzles 13 for ejection on the substrate 12 Relative to the moving direction. A nozzle opening 15 is formed on one front end surface of the ejection nozzle 13. In addition, in order to introduce the evaporation material obtained by heating and evaporating the evaporation material from a crucible (not shown) into the manifold 11, a material introduction port 16 is formed on the opposite side of the manifold 11 opposite to the ejection nozzle 13, The material introduction port 16 is connected to a material introduction pipe 17 having an inner diameter d.

The front and rear nozzle rows 14F and 14R are arranged at a predetermined distance from the material introduction port 16 and are further arranged at a nozzle row interval Lp in the moving direction of the substrate 12. The distance between the front and rear nozzle rows 14F and 14R and the material introduction port 16 is to allow the evaporated material supplied from the material introduction port 16 to be uniformly introduced into the discharge nozzle 13. In addition, the ejection nozzles 13 at both ends of the front and rear nozzle rows 14F and 14R are disposed at positions corresponding to both edge portions of the substrate 12 having a width Ws.

The manifold 11 has an internal space capable of uniformly diffusing the evaporating material introduced from the material introduction port 16. The manifold 11 is formed as a rectangular parallelepiped having a length of Lm, a width of Wm, and a height of Hm. The manifold 11 is on the substrate facing surface 11a. A cooling plate (not shown) is provided to block radiant heat from the substrate 12, and a heater (not shown) is provided on the left and right sides and the front and back sides to prevent the evaporation material from adhering. The substrate 12 is moved with respect to the nozzle opening 15 at a predetermined vapor deposition distance S. A pressure detection port 18 is provided on the front side of the manifold 11, and a vapor deposition rate detection port 19 is provided on the rear side of the manifold 11.

As shown in FIG. 2, the cylindrical nozzle body 13 a of the ejection nozzle 13 is erected on the substrate-opposing surface 11 a of the manifold 11. One end plate 13b of the nozzle opening 15.

If the diameter of the nozzle opening 15 is D '(mm), each nozzle row 14F, 14R The nozzle pitch P of the ejection nozzle 13 satisfies the following formula (1).

D ’<P <1.11 × S ... Formula (1)

That is, as shown in FIG. 3A, the arrangement of the discharge nozzles 13 of the on-line manifold 11 is (in theory) an infinite number of rows with respect to the vapor deposition substrate 12 having an arbitrary substrate width. When the discharge flow rate of the nozzle 13 is constant, the film thickness uniformity of the vapor deposition substrate 12 is related to the nozzle pitch P of the discharge nozzle 13. As shown in FIG. 3B, the film thickness distribution of the vapor deposition substrate 12 directly above the arrangement of the ejection nozzles 13 is as follows: The accumulated film thickness of the vapor deposition directly above the ejection nozzles 13 is the thickest, and the adjacent The uppermost point of the middle point (1 / 2P) of the discharge nozzle 13 is the thinnest. In addition, since D '<P, a slit-shaped nozzle opening is not included here. In addition, as shown in FIG. 4A, if the nozzle pitch P is small, the difference in film thickness between the maximum film thickness and the minimum film thickness becomes small. As shown in FIG. 4B, if the nozzle pitch P is large, the maximum film thickness and the minimum film are reduced. The thick film thickness difference becomes large. When the maximum film thickness is dmax and the minimum film thickness is dmin, the film thickness uniformity is expressed by the following formula (2).

Film thickness uniformity = [(dmax-dmin) / (dmax + dmin)] × 100 (%) ... Formula (2)

As such, since the film thickness uniformity is related to the maximum film thickness and the minimum film thickness, it is related to the nozzle pitch P. In addition, the quality of the product can be maintained by making the film thickness uniformity within ± 5%.

FIG. 5 is a simulation showing a nozzle pitch P in which film thickness uniformity is less than ± 5% at a vapor deposition distance S when the same amount of vapor deposition material is ejected from all the ejection nozzles 13 without limitation on the number of the ejection nozzles 13. Graph of maximum values.

According to Fig. 5, as shown in formula (1), by making the nozzle pitch P larger than D 'and smaller than 1.11 times the vapor deposition distance S, the film thickness uniformity can be applied as a product. Within ± 5%.

Here, as the nozzle pitch P becomes smaller, the uniformity of the film thickness can be improved, but the utilization efficiency of the material decreases. Therefore, P is not included D 'is continuous, that is, the slit-shaped ejection nozzle 13. In addition, in each of the nozzle rows 14F and 14R, it is mechanically undesirable that the nozzle pitch P is 20 mm or less. In addition, as in Example 2 described later, when the ejection nozzles 13 of the nozzle rows 14F and 14R are staggered, when the vapor deposition substrate 12 is viewed from the front, the nozzle pitch P can be infinitely close to 0, and thus Can take into account the uniformity of film thickness and the utilization efficiency of materials.

As such, the smaller the nozzle pitch P, the more uniform the film thickness can be improved, but the utilization efficiency of the material decreases. If the uniformity of the film thickness is within about 5%, the nozzle pitch P can be widened and the utilization efficiency of the material can be improved.

When the inner diameter of the nozzle body 13a is D (mm), the nozzle length is L (mm), and the diameter of the nozzle opening 15 is D '(mm), the ejection nozzle 13 satisfies the following formula (3).

L At 9 × D, D ' 2.7 × D ² / L

When L <9 × D, D ' D / 3 ... Formula (3)

The above formula (3) is obtained for an organic material forming an organic EL film. When the above formula (3) is satisfied [Fig. 6 (L (9 × D) LD '/ D ^{2 is} greater than 0 and less than 2.7, or the area in Figure 7 (when L <9 × D) is greater than 0 and less than 1/3], from The evaporation material ejected from the nozzle opening 15 of each of the ejection nozzles 13 to the substrate 12 is approximated by a cos ⁿ θ rule, that is, a cos ⁿ θ curve. At this time, since the evaporation material ejected from the nozzle opening 15 of the ejection nozzle 13 is sufficiently diffused on the surface (evaporation surface) of the substrate 12 for vapor deposition, the uniformity of the film thickness can be improved.

As shown in Figure 6, L At 9 × D, in a region where D ′ × L / D ^{2 is} greater than 0 and less than 2.7, the value of n is about 4.00 to 4.25. In addition, as shown in FIG. 7, when L <9 × D, in a region where D ′ / D is greater than 0 and less than 1/3, the value of n is about 4.05 to 4.25. In the cos ⁿ θ rule, the smaller the value of n, the more the evaporation material diffuses on the surface of the substrate 12 for vapor deposition, thereby improving the uniformity of the film thickness. Most preferably, the value of n is about 4.05 to 4.10. At this time, L shown in FIG. 6 In the case of 9 × D, a region where D ′ × L / D ^{2 is} greater than 1.1 and less than 1.8, and when L <9 × D shown in FIG. 7 is a region in which D ′ / D is greater than 0 and less than 0.18.

Here, if shown in Figure 6, L When D ′ × L / D ^{2 is} greater than 2.7 at 9 × D, or as shown in FIG. 7, when D ′ / D is greater than 1/3 at L × 9 × D, the nozzle opening 15 of each ejection nozzle 13 is directed toward The evaporation material ejected from the substrate 12 does not follow the cos ⁿ θ rule, and vapor deposition is not performed uniformly on the substrate 12. As a result, the film thickness of the portion of the substrate 12 facing the nozzle opening 15 is excessively increased, which impedes uniformity. Here, from the viewpoint of processing accuracy, for example, the diameter D ′ of the nozzle opening 15 is set to 1 mm or more.

According to the first embodiment described above, the nozzle rows 14F and 14R are provided in front and rear of the substrate 12 in the moving direction. The nozzle rows 14F and 14R are arranged with the ejection nozzles 13 at a predetermined nozzle pitch P, and are arranged so as to oppose each other in the moving direction of the substrate 12. Each ejection nozzle 13 can increase the vapor deposition speed. Therefore, even if the diameter of the nozzle opening 15 is small and the conductivity of the discharge flow path is reduced, a predetermined vapor deposition rate can be secured by a multi-row arrangement.

In addition, by making the nozzle pitch P of the ejection nozzles 13 of each of the nozzle rows 14F and 14R larger than the diameter D ′ of the nozzle opening 15 and less than 1.11 times the vapor deposition distance S, it is possible to make the film thickness uniformity within ± Within 5%.

In addition, in each of the ejection nozzles 13, L Satisfying D 'at 9 × D 2.7 × D ² / L, satisfy D 'when L <9 × D The spray nozzle 13 for D / 3 can make the diffusion state of the evaporation material sprayed from the nozzle port 15 uniform and conform to the cos ⁿ θ rule, thereby improving the uniformity of the thickness of the adhered film.

[Example 2]

8 and 9 show a second embodiment of a manifold for a vacuum evaporation apparatus. In the second embodiment, the same components as those in the first embodiment are denoted by the same reference numerals, and descriptions thereof are omitted.

On the facing surface 11a of the single manifold 11 opposite to the substrate 12s, nozzle rows 14F and 14R are provided in front and rear of the substrate 12s in the moving direction, respectively. The nozzle rows 14F and 14R protrude at a predetermined nozzle pitch P in the width direction. A plurality of ejection nozzles 13 having a nozzle opening 15 are provided. Among the above-mentioned front and rear nozzle rows 14F and 14R, the discharge nozzles 13 of the rear nozzle row 14R are arranged at staggered positions shifted by 1 / 2P relative to the discharge nozzles 13 of the front nozzle row 14F. on.

The configuration of the ejection nozzle 13 is the same as that of the first embodiment.

FIG. 9 shows a use state when a substrate 12s having a width Wn is formed in Example 2. The width of the substrate 12s is smaller than that of the substrate 12 having a width Ws in a normal state. In this case, since the evaporation material ejected from the ejection nozzles 13E at the end portions of the nozzle rows 14F and 14R is discharged unnecessarily, as shown in FIG. 9C, a closing plug is attached to the ejection nozzles 13E at the end portions. 21, vapor deposition is performed such that the ejection nozzle 13E at the end portion does not eject the evaporation material.

In the second embodiment described above, the number of the ejection nozzles 13E in the rear nozzle row 14R is one less than the number of the ejection nozzles 13E in the front nozzle row 14F. For example, as shown in FIG. 9A, when the substrate 12s is moved based on the centerline CL, the front nozzle row 14F with a large number of the ejection nozzles 13 is installed and closed on the ejection nozzles 13E at both ends. The plug 21 is vapor-deposited so that the evaporation nozzles 13E on both end sides do not discharge the evaporation material. When the substrate 12s is moved with the side line SL as a reference, the two ejection nozzles 13E on the opposite side of the side line SL from the front nozzle row 14F and the one on the side opposite to the side line SL of the rear nozzle row 14R A closing plug 21 is attached to the ejection nozzle 13E, and vapor deposition is performed so that the ejection nozzle 13E does not eject an evaporation material. Accordingly, even when the substrate 12s having a small width is vapor-deposited, the evaporation material is not discharged unnecessarily, and the utilization efficiency of the vapor-deposition material can be improved. In addition, the above-mentioned closing plug 21 may be attached to the discharge nozzle 13 of the first embodiment.

According to the second embodiment, the nozzle rows 14F and 14R are provided in front and rear of the substrate 12s in the moving direction. The nozzle rows 14F and 14R are arranged with the nozzles 13 at a predetermined nozzle pitch P, and the nozzles 13 are arranged so that The staggered position shifted in the width direction makes it possible to provide a plurality of nozzle ports 15 without causing the discharge nozzles 13 to approach each other. Thereby, the vapor deposition distance between the nozzle opening 15 and the substrate 12s can be shortened, the uniformity of the thickness of the adhered film can be maintained, and the utilization efficiency of the material can be improved.

In addition, when the substrate 12s having a small width is vapor-deposited, by installing the closing plug 21 on the ejection nozzle 13E on the end side of the nozzle rows 14F and 14R, the evaporation material is not ejected unnecessarily, and the utilization of the evaporation material can be improved. effectiveness.

[Example 3]

Fig. 10 shows a third embodiment of a manifold for a vacuum evaporation apparatus. The same components as those in the above-mentioned Embodiments 1 and 2 are assigned the same reference numerals, and descriptions thereof are omitted.

The front and rear nozzle rows 14F and 14R are arranged on the substrate-opposing surface 11a of the manifold 11, and the nozzle rows 14F and 14R are the front and rear rows 14Ff, 14Fr, 14Rf, and 14Rr, respectively. Further, the ejection nozzles 13 of the front rows 14Ff and 14Rf are larger than those of the rear rows 14Fr and 14Rr. The ejection nozzles 13 are shifted by 1 / 2P in the width direction of the substrate 12 and are disposed at staggered positions.

According to the third embodiment described above, the same effects as those of the first and second embodiments can be obtained.

Claims (6)

A manifold for a vacuum evaporation device, which is a manifold for an on-line vacuum evaporation device, is arranged opposite to a vapor deposition substrate moving at a fixed speed, and sprays one from a plurality of nozzle openings provided on a pair of placement surfaces The vapor deposition material is adhered to the surface of the vapor deposition substrate. The manifold for the vacuum vapor deposition device is characterized in that it is on the opposite surface of the single manifold to the vapor deposition substrate Nozzle rows are provided, the nozzle rows are protrudingly arranged along the width direction of the vapor deposition substrate by a predetermined nozzle pitch, and a plurality of spray nozzles having the nozzle ports are arranged, and a plurality of the nozzle rows are arranged along the vapor deposition substrate The moving direction of the material is arranged at a predetermined interval. The ejection nozzles of the nozzle row in front of the moving direction of the vapor deposition substrate and the ejection nozzles of the nozzle row of the rear are relatively arranged in the moving direction of the vapor deposition substrate. When the inner diameter of the nozzle is D, the length of the nozzle is L, and the diameter of the nozzle port is D ', D'

1mm, and at L

9 × D meets D '

2.7 × D ² / L, satisfying D ′ when L <9 × D

D / 3. The manifold for a vacuum vapor deposition apparatus according to claim 1, wherein when the nozzle pitch of the nozzles for each nozzle row is P and the vapor deposition distance between the nozzle port and the vapor deposition substrate is S, D '< P <1.11 × S. The manifold for a vacuum vapor deposition apparatus according to claim 1, wherein at least one nozzle row among the nozzle rows corresponds to a width of the vapor deposition substrate, and a closing plug is installed, and the closing plug closes an end portion Nozzle port of the side spray nozzle. A manifold for a vacuum evaporation device, which is a manifold for an on-line vacuum evaporation device, is arranged opposite to a vapor deposition substrate moving at a fixed speed, and sprays one from a plurality of nozzle openings provided on a pair of placement surfaces The vapor deposition material is adhered to the surface of the vapor deposition substrate. The manifold for the vacuum vapor deposition device is characterized in that it is on the opposite surface of the single manifold to the vapor deposition substrate Nozzle rows are provided, the nozzle rows are protrudingly arranged along the width direction of the vapor deposition substrate by a predetermined nozzle pitch, and a plurality of spray nozzles having the nozzle ports are arranged, and a plurality of the nozzle rows are arranged along the vapor deposition substrate The moving direction of the material is arranged at a predetermined interval. With respect to the ejection nozzles of the nozzle row in the front of the movement direction of the vapor deposition substrate, the ejection nozzles of the nozzle row in the rear are arranged at staggered positions offset by 1/2 nozzle pitch. When the nozzle inner diameter of the discharge nozzle is D, the nozzle length is L, and the diameter of the nozzle opening is D ', D'

1mm, and at L

9 × D meets D '

2.7 × D ² / L, satisfying D ′ when L <9 × D

D / 3. The manifold for a vacuum vapor deposition apparatus according to claim 4, wherein when the nozzle pitch of the nozzles for each nozzle row is P and the vapor deposition distance between the nozzle port and the vapor deposition substrate is S, D '< P <1.11 × S. The manifold for a vacuum vapor deposition apparatus according to claim 4, wherein at least one nozzle row among the nozzle rows corresponds to a width of the vapor deposition substrate, and a closing plug is installed, and the closing plug closes an end portion Nozzle port of the side spray nozzle.