TW201516166A - Manifold used for vacuum evaporation device - Google Patents

Abstract

The present invention provides a manifold used for vacuum evaporation device that can improve the utilization efficiency of evaporation materials. The manifold for vacuum evaporation device is an inline type manifold used for vacuum evaporation device. Nozzle rows (14F, 14R) are disposed at a single manifold (11) on the opposed surface (11a) that is opposite to the substrate. A plurality of spraying nozzles (13) with nozzle orifices are protrudingly arranged on the nozzle rows (14F, 14R) at a specified nozzle spacing (P) along the width direction of the substrate (12), and the nozzle rows (14F, 14R) are disposed at a specified nozzle row spacing (Lp) along the movement direction of the substrate (12). The spraying nozzles (13) of the nozzle row (14R) behind the substrate (12) moving direction are disposed opposite to the substrate (12) moving direction against the spraying nozzles (13) of the nozzle row (14F) in front of the substrate (12) moving direction.

Description

Vacuum tube for vacuum evaporation device

The present invention relates to a tantalum tube for a vacuum vapor deposition apparatus which is suitable for the manufacture of an organic EL (electroluminescence) element, and is subjected to inline vapor deposition using a linear source.

In the on-line vapor deposition method, a crucible tube as a linear source of a vapor deposition material is disposed to face the vapor deposition substrate moving at a fixed speed in the width direction, and evaporating material is ejected from a discharge nozzle provided on the manifold to evaporate. The material adheres to the surface of the vapor-deposited substrate.

In the vacuum evaporation apparatus of the in-line vapor deposition method, Patent Document 1 discloses a device in which a tantalum tube for a linear source is used as a crucible for heating a vapor deposition material to vaporize it, and the length of the crucible on the upper surface of the crucible. A plurality of discharge nozzles are formed in the side direction, and nozzle ports for discharging the vapor deposition material are formed in each of the discharge nozzles.

Patent Document 1: Japanese Patent Publication No. 4380319 (Fig. 1)

However, there is a need to increase the utilization efficiency (the ratio of the amount of adhesion to the amount of evaporation) of a vapor deposition material such as an organic EL having a high price. Therefore, it is conceivable that the discharge nozzle is brought close to the vapor deposition substrate, so that the vapor deposition distance of the nozzle opening as the orifice and the vapor deposition substrate becomes short. When the vapor deposition distance is made short, in order to ensure the uniformity of the adhesion film thickness, it is necessary to increase the nozzle opening, and the ejection nozzles are brought close to each other. In addition, in order to adjust the discharge amount, the nozzle opening of the discharge nozzle is an orifice that is closed at the outlet. However, if the ratio of the diameter of the nozzle opening/the inner diameter of the discharge nozzle is not constant, the discharge is performed from one discharge nozzle. The film thickness of the vapor deposition material is unstable set. Therefore, it is difficult to make the nozzle opening close to the setting.

As a countermeasure, the diameter of the nozzle opening can be made small, but if the diameter of the nozzle opening is made small, the conductivity of the discharge flow path becomes small. Therefore, in order to secure a predetermined vapor deposition rate, it is necessary to increase the evaporation temperature (heating temperature) of the vapor deposition material in the crucible. However, if the evaporation temperature is increased, some vapor deposition materials are likely to be deteriorated, and the running cost may be increased.

In order to solve the above problems, an object of the present invention is to provide a manifold for a vacuum vapor deposition apparatus which can improve the utilization efficiency of a vapor deposition material.

The invention of the first aspect provides a manifold for a vacuum vapor deposition apparatus, which is a manifold for an in-line vacuum vapor deposition apparatus, and is disposed opposite to an evaporation substrate that moves at a fixed speed, from a plurality of nozzles disposed on opposite surfaces The vapor deposition material is ejected from the mouth, and the vapor deposition material is attached to the surface of the vapor deposition substrate, wherein a nozzle row is disposed on the opposite surface of the single manifold opposite to the vapor deposition substrate, and the nozzle columns are vapor-deposited A plurality of ejection nozzles having the nozzle openings are protruded from the nozzle direction by a predetermined nozzle pitch in the width direction of the substrate, and the plurality of nozzle rows are arranged at predetermined intervals along the moving direction of the vapor deposition substrate, and the vapor deposition substrate is moved forward in the moving direction. The nozzle for discharging the nozzle row and the nozzle for discharging the nozzle row at the rear are arranged to face each other in the moving direction of the vapor deposition substrate.

According to a second aspect of the invention, there is provided a manifold for a vacuum vapor deposition apparatus, which is a manifold for an in-line vacuum vapor deposition apparatus, and a manifold is disposed opposite to a vapor deposition substrate that moves at a fixed speed, from a plurality of tubes disposed on the manifold a nozzle material ejects a vapor deposition material, and causes the vapor deposition material to adhere to the surface of the vapor deposition substrate, wherein a nozzle row is disposed on an opposite surface of the single manifold opposite to the vapor deposition substrate, and the nozzle columns A plurality of ejection nozzles having nozzle openings are protruded from a predetermined nozzle pitch in the width direction of the vapor deposition substrate, and a plurality of rows of nozzle rows are moved along the vapor deposition substrate. The discharge nozzles of the nozzle rows in the front direction in the moving direction of the vapor deposition substrate are disposed at a predetermined interval, and the discharge nozzles of the nozzle rows in the rear are arranged at a staggered position shifted by 1/2 nozzle pitch.

According to the aspect of the invention of the third aspect, the nozzle pitch of the nozzle for discharge of each nozzle row is P, the diameter of the nozzle opening is D', and the vapor deposition distance of the nozzle opening and the vapor deposition substrate is When S, D'<P<1.11×S.

According to the invention of any one of the aspects 1 to 3, the nozzle inner diameter of the nozzle for discharge is D (mm), the nozzle length is L (mm), and the diameter of the nozzle opening is D' ( When mm), the nozzle for ejection is in L Meets D' at 9×D 2.7 × D ² /L, and satisfy D' when L < 9 × D D/3.

According to a fifth aspect of the invention, in the configuration of any one of the first to fourth aspects, the closing plug is attached to at least one of the plurality of nozzle rows in accordance with the width of the vapor deposition substrate, and the closed end of the closing plug is closed. The nozzle opening of the nozzle for discharge on the side.

According to the invention of the first aspect, the discharge nozzles of the front and rear nozzle rows are arranged to face each other in the moving direction of the vapor deposition substrate, and the vapor deposition rate can be improved as compared with the case where the nozzle rows are arranged in a row. . Thereby, even if the diameter of the nozzle opening is reduced and the conductivity of the discharge flow path is made small, a plurality of rows can be arranged to ensure a predetermined vapor deposition rate.

According to the invention of the second aspect, by arranging the respective discharge nozzles of the front and rear nozzle rows at the staggered positions, even if the nozzles for the nozzles ensure a sufficient nozzle pitch in each of the nozzle rows, the front side can be vapor-deposited. The nozzles for discharging at the time of the substrate are arranged close to each other, thereby improving the uniformity of the thickness of the adhering film. Thereby, the vapor deposition distance of the discharge nozzle and the vapor deposition substrate can be shortened, and the uniformity of the adhesion film thickness can be prevented from being deteriorated, and the material utilization efficiency can be improved.

According to the invention of the third aspect, when the vapor deposition distance is S, the nozzle pitch P of the discharge nozzles of the nozzle rows is made larger than the diameter of the nozzle opening and smaller than S × 1.11, thereby achieving ±5% required as a product. The vapor deposition was performed within the film thickness uniformity.

According to the invention of the fourth aspect, the nozzle for ejection is used in the L Meets D' at 9×D 2.7 × D ² /L, and satisfy D' when L < 9 × D In the D/3 discharge nozzle, the diffusion state of the evaporation material ejected from the nozzle opening is uniform in accordance with cos ⁿ θ, and the uniformity of the adhesion film thickness can be improved.

According to the invention of the fifth aspect, when the width of the vapor-deposited substrate is narrowed, the closing plug is attached to the nozzle opening of the discharge nozzle on the end side of the nozzle row, and the evaporating material can be suppressed from being discharged. This can reduce operating costs.

11‧‧‧岐管

11a‧‧‧ facing

12‧‧‧Substrate

12s‧‧‧Substrate

13‧‧‧Spray nozzle

13a‧‧‧Nozzle body

13b‧‧‧End board

13E‧‧‧Spray nozzle

14F‧‧‧Nozzle column

14R‧‧‧Nozzle column

14Ff‧‧‧Forefront nozzle column

14Rr‧‧‧After nozzle row

14Rf‧‧‧Forefront nozzle column

14Rr‧‧‧After nozzle row

15‧‧‧Nozzle mouth

16‧‧‧Material import

17‧‧‧Material introduction tube

18‧‧‧ Pressure detection port

19‧‧‧ evaporation rate detection port

21‧‧‧ Closed plug

S‧‧‧ evaporation distance

P‧‧‧Nozzle spacing

L‧‧‧ nozzle length

D‧‧‧Inner diameter

D’‧‧‧ caliber

d‧‧‧Inner diameter

CL‧‧‧ center line

SL‧‧‧ side line

Hm‧‧‧ Height

Wm‧‧‧Width

Wn‧‧‧Width

Ws‧‧‧Width

Lm‧‧‧ length

Lp‧‧‧nozzle column spacing

1A to 1C are views showing a first embodiment of a crucible for a vacuum vapor deposition device according to the present invention. FIG. 1A is a plan view, FIG. 1B is a side view, and FIG. 1C is a front view.

Fig. 2 is a longitudinal sectional view showing a nozzle for discharge.

3A and 3B are explanatory views of the vapor deposition film thickness of the vapor deposition by the in-line vapor deposition method, FIG. 3A is a schematic plan view showing the arrangement of the discharge nozzles, and FIG. 3B is a front view showing the film thickness.

Fig. 4 is a front view showing a change in film thickness due to a nozzle pitch of a discharge nozzle, wherein Fig. 4A shows a narrow nozzle pitch, and Fig. 4B shows a wide nozzle pitch.

Fig. 5 is a graph showing the range of the nozzle pitch with respect to the vapor deposition distance in which the film thickness uniformity is less than ±5%.

Fig. 6 is a view showing the relationship between (the length L of the discharge nozzle) × (the diameter D' of the nozzle opening) / (the inner diameter D of the discharge nozzle) and the value of n of the cos ⁿ θ rule in the discharge nozzle. Figure.

Fig. 7 is a graph showing the relationship between the nozzle opening (diameter D') / (the nozzle inner diameter D of the discharge nozzle) and the n value of cos ⁿ θ in the discharge nozzle.

Fig. 8 is a plan view showing a second embodiment of the manifold for a vacuum vapor deposition device of the present invention.

9A to 9C are diagrams showing the use state of the manifold when the substrate width is changed, FIG. 9A shows the substrate moving along the center line, FIG. 9B shows the substrate moving along the side line, and FIG. 9C shows the closed plug. The longitudinal section of the nozzle for discharge of the state. And Fig. 10 is a plan view showing a third embodiment of the manifold for a vacuum vapor deposition device of the present invention.

[Example 1]

Next, a first embodiment of a crucible for a vacuum vapor deposition apparatus of the in-line vapor deposition method of the present invention will be described based on Figs. 1 to 4 .

As shown in FIGS. 1 and 2, the manifold 11 is disposed to face a vapor deposition surface of a substrate (vapor deposition substrate) 12 that is moved at a fixed speed in a vacuum deposition chamber that is kept in a vacuum state. In the pair of surfaces 11a of the manifold 11, nozzle rows 14F and 14R are provided in front of and behind the moving direction of the substrate 12, and a plurality of nozzles 13 of the nozzle rows 14F and 14R are spaced apart in the width direction by a predetermined nozzle pitch. P is highlighted. Here, as shown in FIG. 2, the nozzle pitch P means the distance between the nozzle opening 15 and the nozzle opening 15 of the adjacent discharge nozzles 13 among the nozzle rows 14F and 14R.

The nozzles 13 for discharging the nozzle rows 14F and 14R on the front and the rear are on the substrate 12 The relative orientation of the moving direction. A nozzle opening 15 is formed in each of the front end faces of the discharge nozzles 13. Further, in order to introduce the evaporation material obtained by heating and evaporating the vapor deposition material by 坩埚 (not shown) into the manifold 11, a material introduction port 16 is formed on the opposite surface of the manifold 11 opposite to the discharge nozzle 13, The material introduction port 16 is connected to a material introduction pipe 17 having an inner diameter d.

The front and rear nozzle rows 14F, 14R are disposed to be spaced apart from the material introduction port 16 by a predetermined distance, and are further arranged to separate the nozzle row spacing Lp in the moving direction of the substrate 12. The distance between the front and rear nozzle rows 14F and 14R and the material introduction port 16 is such that the evaporation material supplied from the material introduction port 16 is uniformly introduced into the discharge nozzle 13 . Further, the discharge nozzles 13 at both end portions of the front and rear nozzle rows 14F and 14R are disposed at positions corresponding to both edge portions of the substrate 12 having the width Ws.

The manifold 11 has an internal space capable of uniformly diffusing the evaporation material introduced from the material introduction port 16, and the manifold 11 is formed as a rectangular parallelepiped having a front-rear length Lm, a width Wm, and a height Hm, and is on the substrate opposing surface 11a. A cooling plate (not shown) for shielding radiant heat from the substrate 12 is provided, and a heater (not shown) for preventing adhesion of the evaporation material is provided on the left and right side surfaces and the front and rear side surfaces. Further, the substrate 12 is moved with respect to the nozzle opening 15 by a predetermined vapor deposition distance S. A pressure detecting port 18 is provided on the front side of the manifold 11, and an evaporation rate detecting port 19 is provided on the rear side of the manifold 11.

As shown in Fig. 2, the cylindrical nozzle body 13a of the discharge nozzle 13 is erected on the substrate facing surface 11a of the manifold 11, and is attached to the front end surface of the nozzle body 13a so as to form an orifice. One end plate 13b of the nozzle opening 15.

If the diameter of the nozzle opening 15 is D' (mm), each nozzle row 14F, 14R The nozzle pitch P of the discharge nozzle 13 satisfies the following formula (1).

D'<P<1.11×S...Formula (1)

In other words, as shown in FIG. 3A, the arrangement of the discharge nozzles 13 of the in-line manifold 11 is (in theory) an infinite number of columns for the vapor deposition substrate 12 having an arbitrary substrate width, and it is assumed that all of the discharge nozzles are used for all discharges. When the discharge flow rate of the nozzle 13 is fixed, the film thickness uniformity of the vapor deposition substrate 12 is related to the nozzle pitch P of the discharge nozzle 13. As shown in FIG. 3B, the film thickness distribution of the vapor deposition substrate 12 directly above the arrangement of the discharge nozzles 13 is as follows: the cumulative film thickness of the vapor deposition plate directly above the discharge nozzle 13 is the thickest, and adjacent The uppermost point (1/2P) of the discharge nozzle 13 is the thinnest at the top. Further, since D' < P, the slit-shaped nozzle opening is not included. Further, as shown in Fig. 4A, if the nozzle pitch P is small, the difference in film thickness between the maximum film thickness and the minimum film thickness becomes small, as shown in Fig. 4B, if the nozzle pitch P is large, the maximum film thickness and the minimum film are obtained. The thick film thickness difference becomes large. When the maximum film thickness is dmax and the minimum film thickness is dmin, the film thickness uniformity is expressed by the following formula (2).

Film thickness uniformity = [(dmax - dmin) / (dmax + dmin)] × 100 (%)... Formula (2)

Thus, since the film thickness uniformity is related to the maximum film thickness and the minimum film thickness, it is related to the nozzle pitch P. Further, by making the film thickness uniformity within ±5%, the quality of the product can be maintained.

5 is a simulation showing a nozzle pitch P in which the film thickness uniformity is less than ±5% at the vapor deposition distance S when the number of the discharge nozzles 13 is not limited and the same amount of the vapor deposition material is ejected from all the discharge nozzles 13. A graph of the maximum value.

According to Fig. 5, as shown in the formula (1), by making the nozzle pitch P larger than D' and smaller than 1.11 times the vapor deposition distance S, the film thickness uniformity can be made practical as a product. Within ±5%.

Here, the smaller the nozzle pitch P is, the more uniform the film thickness can be, but the utilization efficiency of the material is lowered. Therefore, does not contain P A continuous nozzle of D', that is, a slit-shaped discharge nozzle 13. Further, in each of the nozzle rows 14F and 14R, it is not preferable that the nozzle pitch P is 20 mm or less in mechanical configuration. Further, when the discharge nozzles 13 of the nozzle rows 14F and 14R are alternately arranged as in the second embodiment to be described later, when the vapor deposition substrate 12 is viewed from the front, the nozzle pitch P can be infinitely close to zero. It is possible to achieve both film thickness uniformity and material utilization efficiency.

As described above, the smaller the nozzle pitch P is, the more uniform the film thickness can be, but the utilization efficiency of the material is lowered. When the uniformity of the film thickness is within about ±5%, the nozzle pitch P can be widened to improve the utilization efficiency of the material.

Here, when the inner diameter of the nozzle body 13a is D (mm), the nozzle length is L (mm), and the diameter of the nozzle opening 15 is D' (mm), the discharge nozzle 13 satisfies the following formula (3).

L When 9×D, D' 2.7×D ² /L

When L<9×D, D' D/3...Formula (3)

The above formula (3) is obtained for the organic material forming the organic EL film. When the above formula (3) is satisfied [Fig. 6 (L) 9 × D) LD' / D ^{2 is} greater than 0 and below 2.7, or in Figure 7 (L <9 × D) D' / D is greater than 0 and below 1/3 of the region], from each discharge nozzle 13 of the nozzle opening 15 θ cos ⁿ set according to the discharged with the evaporation material for the substrate 12, i.e., approximately the cos ⁿ θ curve. At this time, since the evaporation material discharged from the nozzle opening 15 of the discharge nozzle 13 is sufficiently diffused on the surface (vapor deposition surface) of the substrate 12 to perform vapor deposition, the uniformity of the film thickness can be improved.

As shown in Figure 6, L In the case of 9 × D, the value of n is about 4.00 to 4.25 in a region where D' × L / D ^{2 is} larger than 0 and is less than 2.7. Further, as shown in Fig. 7, when L < 9 × D, the value of n is about 4.05 to 4.25 in a region where D'/D is larger than 0 and is 1/3 or less. In the cos ⁿ θ rule, the smaller the value of n, the more the evaporation material diffuses on the surface of the substrate 12 to perform vapor deposition, thereby improving the uniformity of the film thickness. Most preferably, the value of n is about 4.05 to 4.10. At this time, the L shown in Fig. 6 In the case of 9 × D, where D' × L / D ^{2 is} larger than 1.1 and 1.8 or less, when L < 9 × D shown in Fig. 7, D'/D is larger than 0 and is not more than 0.18.

Here, if it is as shown in Figure 6, L When 9 × D, D' × L / D ^{2 is} larger than 2.7, or as shown in Fig. 7, when L < 9 × D, D' / D is larger than 1/3, from the nozzle opening 15 of each of the discharge nozzles 13 The evaporation material ejected from the substrate 12 is not fixed in accordance with cos ⁿ θ, and is not uniformly vapor-deposited on the substrate 12. As a result, the film thickness of the portion of the substrate 12 facing the nozzle opening 15 is excessively thick, which hinders uniformity. In addition, from the viewpoint of processing accuracy, for example, the diameter D′ of the nozzle opening 15 is set to 1 mm or more.

According to the first embodiment, the nozzle rows 14F and 14R are provided in front of and behind the moving direction of the substrate 12, and the nozzle rows 14F and 14R are disposed at a predetermined nozzle pitch P, and the discharge nozzles 13 are arranged to face each other in the moving direction of the substrate 12. Each of the discharge nozzles 13 can increase the vapor deposition speed. Thereby, even if the diameter of the nozzle opening 15 is small and the conductivity of the discharge flow path becomes small, it is possible to ensure a predetermined vapor deposition rate through a plurality of rows.

Further, by making the nozzle pitch P of the discharge nozzles 13 of the nozzle rows 14F and 14R larger than the diameter D' of the nozzle opening 15 and smaller than 1.11 times the vapor deposition distance S, the film thickness uniformity can be made ± as a product. Within 5%.

Further, in each of the discharge nozzles 13, the passage of L is used. Meets D' at 9×D 2.7×D ² /L, L<9×D satisfies D' The discharge nozzle 13 of the D/3 can make the diffusion state of the evaporation material discharged from the nozzle opening 15 uniform according to the cos ⁿ θ rule, and the uniformity of the adhesion film thickness can be improved.

[Embodiment 2]

Fig. 8 and Fig. 9 show a second embodiment of a manifold for a vacuum vapor deposition apparatus. In the second embodiment, the same members as those in the first embodiment are denoted by the same reference numerals, and the description thereof will be omitted.

On the opposing surface 11a of the single manifold 11 facing the substrate 12s, nozzle rows 14F and 14R are provided in front of and behind the moving direction of the substrate 12s, and the nozzle rows 14F and 14R protrude at a predetermined nozzle pitch P in the width direction. A plurality of discharge nozzles 13 having nozzle openings 15 are provided. In the discharge nozzles 13 of the front and rear nozzle rows 14F and 14R, the discharge nozzles 13 of the rear nozzle row 14R are disposed at a position shifted by 1/2 P with respect to the discharge nozzles 13 of the front nozzle row 14F. on.

The structure of the discharge nozzle 13 is the same as that of the first embodiment.

Fig. 9 is a view showing a state of use in the case where a substrate 12s having a width Wn is formed in the second embodiment, and the width of the substrate 12s is smaller than the substrate 12 having a width Ws in a normal state. In this case, since the evaporating material ejected from the discharge nozzles 13E at the end portions of the nozzle rows 14F and 14R is unnecessarily ejected, as shown in FIG. 9C, a closing plug is attached to the end discharge nozzle 13E. 21, the discharge nozzle 13E at the end portion is vapor-deposited so that the evaporation material is not ejected.

In the second embodiment, the number of the discharge nozzles 13E of the nozzle row 14F in the front is smaller than the number of the nozzles 13 for the nozzle row 14R in the rear. For example, as shown in FIG. 9A, when the substrate 12s is moved with respect to the center line CL, the nozzle row 14F in the front side in which the number of the discharge nozzles 13 is provided is closed on the discharge nozzles 13E on both end sides. The plug 21 is vapor-deposited so that the ejecting nozzle 13E on both end sides does not eject the evaporating material. Further, when the substrate 12s is moved with respect to the side line SL, one of the two discharge nozzles 13E on the side opposite to the side line SL and the nozzle line 14R on the rear side opposite to the side line SL in the front nozzle row 14F The closing plug 21 is attached to the discharge nozzle 13E, and vapor deposition is performed so that the discharge nozzle 13E does not discharge the evaporation material. Thereby, even when the substrate 12s having a small width is vapor-deposited, the evaporation material is not unnecessarily ejected, and the utilization efficiency of the vapor deposition material can be improved. Further, the closing plug 21 may be attached to the discharge nozzle 13 of the first embodiment.

According to the second embodiment, the nozzle rows 14F and 14R are provided in front of and behind the moving direction of the substrate 12s. The nozzle rows 14F and 14R are disposed at a predetermined nozzle pitch P, and the discharge nozzles 13 are disposed so that the discharge nozzles 13 are arranged so that In the staggered manner in which the positions are shifted in the width direction, a plurality of nozzle openings 15 can be provided without causing the discharge nozzles 13 to approach each other. Thereby, the vapor deposition distance between the nozzle opening 15 and the substrate 12s can be shortened, and the uniformity of the adhesion film thickness can be maintained and the utilization efficiency of the material can be improved.

In addition, when the substrate 12s having a small width is vapor-deposited, the sealing plug 21 is attached to the discharge nozzle 13E on the end side of the nozzle rows 14F and 14R, so that the evaporation material is not unnecessarily discharged, and the use of the evaporation material can be improved. effectiveness.

[Example 3]

Fig. 10 shows a third embodiment of a manifold for a vacuum vapor deposition apparatus. The same members as those of the above-described first and second embodiments are denoted by the same reference numerals, and the description thereof will be omitted.

The front and rear nozzle rows 14F and 14R are disposed on the substrate facing surface 11a of the manifold 11, and the nozzle rows 14F and 14R are respectively front and rear rows 14Ff, 14Fr, 14Rf, and 14Rr. Further, the discharge nozzles 13 of the front rows 14Ff and 14Rf are opposed to the rear rows 14Fr and 14Rr. The discharge nozzles 13 are arranged at the staggered position by shifting by 1/2P in the width direction of the substrate 12.

According to the above embodiment 3, the same operational effects as those of the embodiment 1 and the embodiment 2 can be obtained.

11‧‧‧岐管

11a‧‧‧ facing

12‧‧‧Substrate

13‧‧‧Spray nozzle

14F‧‧‧Nozzle column

14R‧‧‧Nozzle column

16‧‧‧Material import

18‧‧‧ Pressure detection port

19‧‧‧ evaporation rate detection port

P‧‧‧Nozzle spacing

Wm‧‧‧Width

Ws‧‧‧Width

Lm‧‧‧ length

Lp‧‧‧nozzle column spacing

Claims (8)

The utility model relates to a manifold for a vacuum evaporation device, which is a manifold for an in-line vacuum evaporation device, which is arranged opposite to an evaporation substrate which is moved at a fixed speed, and is ejected from a plurality of nozzle openings provided on a pair of surfaces. Evaporating the material, and causing the vapor deposition material to adhere to the surface of the vapor-deposited substrate, the manifold for the vacuum evaporation apparatus characterized by being on an opposite surface of the single manifold opposite to the vapor-deposited substrate a nozzle row is provided, and the plurality of ejection nozzles having the nozzle openings are protruded from the nozzle row at a predetermined nozzle pitch in the width direction of the vapor deposition substrate, and the plurality of nozzle rows are arranged along the evaporation substrate The moving direction of the material is arranged at a predetermined interval, and the nozzle for discharging the nozzle row in the moving direction of the vapor deposition substrate and the nozzle for discharging the nozzle row in the rear are arranged to face each other in the moving direction of the vapor deposition substrate. The manifold for a vacuum vapor deposition apparatus according to claim 1, wherein a nozzle pitch of the nozzles for discharge of each nozzle row is P, a diameter of the nozzle opening is D', a nozzle opening, and evaporation of the vapor deposition substrate. When the distance is S, D'<P<1.11×S. The manifold for a vacuum vapor deposition apparatus according to claim 1, wherein when the nozzle inner diameter of the nozzle for discharge is D, the nozzle length is L, and the diameter of the nozzle opening is D', the discharge nozzle is at L. Meets D' at 9×D 2.7 × D ² /L, and satisfy D' when L <9×D D/3. The manifold for a vacuum evaporation apparatus according to claim 1, wherein a closure plug is attached to at least one of the nozzle rows corresponding to a width of the vapor deposition substrate, the closure plug closing the end The nozzle opening of the nozzle for the side discharge. The utility model relates to a manifold for a vacuum evaporation device, which is a manifold for an in-line vacuum evaporation device, which is arranged opposite to an evaporation substrate which is moved at a fixed speed, and is ejected from a plurality of nozzle openings provided on a pair of surfaces. Evaporating the material, and causing the vapor deposition material to adhere to the surface of the vapor-deposited substrate, the manifold for the vacuum evaporation apparatus characterized by being on an opposite surface of the single manifold opposite to the vapor-deposited substrate a nozzle row is provided, and the plurality of ejection nozzles having the nozzle openings are protruded from the nozzle row at a predetermined nozzle pitch in the width direction of the vapor deposition substrate, and the plurality of nozzle rows are arranged along the evaporation substrate The moving direction of the material is arranged at a predetermined interval, and the discharge nozzles of the nozzle rows in the front direction of the vapor deposition substrate are disposed at the staggered positions offset by the 1/2 nozzle pitch. The manifold for a vacuum vapor deposition apparatus according to claim 5, wherein a nozzle pitch of the nozzles for ejection of each nozzle row is P, a diameter of the nozzle opening is D', a nozzle opening, and evaporation of the vapor deposition substrate When the distance is S, D'<P<1.11×S. The manifold for a vacuum vapor deposition apparatus according to claim 5, wherein when the nozzle inner diameter of the nozzle for discharge is D, the nozzle length is L, and the diameter of the nozzle opening is D', the discharge nozzle is L. Meets D' at 9×D 2.7 × D ² /L, and satisfy D' when L < 9 × D D/3. The manifold for a vacuum evaporation apparatus according to claim 5, wherein a closing plug is attached to at least one of the nozzle rows corresponding to the width of the vapor-deposited substrate, and the closing plug closes the end The nozzle opening of the nozzle for the side discharge.