CN104561903B - Vacuum deposition apparatus menifold - Google Patents
Vacuum deposition apparatus menifold Download PDFInfo
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- CN104561903B CN104561903B CN201410520985.0A CN201410520985A CN104561903B CN 104561903 B CN104561903 B CN 104561903B CN 201410520985 A CN201410520985 A CN 201410520985A CN 104561903 B CN104561903 B CN 104561903B
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- 238000001771 vacuum deposition Methods 0.000 title claims description 24
- 239000000758 substrate Substances 0.000 claims abstract description 81
- 238000007740 vapor deposition Methods 0.000 claims abstract description 64
- 239000000463 material Substances 0.000 claims abstract description 60
- 238000001704 evaporation Methods 0.000 claims description 41
- 230000008020 evaporation Effects 0.000 claims description 39
- 239000007921 spray Substances 0.000 claims description 27
- 238000000034 method Methods 0.000 claims description 6
- 238000003491 array Methods 0.000 abstract 2
- 238000010586 diagram Methods 0.000 description 5
- 238000005507 spraying Methods 0.000 description 4
- 238000001514 detection method Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 238000010025 steaming Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/12—Organic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/243—Crucibles for source material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Physical Vapour Deposition (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
本发明提供一种提高蒸镀材料的利用效率的真空蒸镀装置用岐管。该真空蒸镀装置用岐管是联机式真空蒸镀装置用岐管，在单一岐管(11)的与基板(12)相对的基板对置面(11a)上设置有喷嘴列(14F、14R)，上述喷嘴列(14F、14R)沿基板(12)的宽度方向隔开规定的喷嘴间距(P)突出设置多个具有喷嘴口的喷出用喷嘴(13)，并且将喷嘴列(14F、14R)在基板(12)的移动方向上隔开规定的喷嘴列间隔(Lp)进行配置，基板(12)移动方向后方的喷嘴列(14R)的喷出用喷嘴(13)与基板(12)移动方向前方的喷嘴列(14F)的喷出用喷嘴(13)在基板(12)的移动方向上相对配置。
The present invention provides a manifold for a vacuum vapor deposition apparatus which improves the utilization efficiency of a vapor deposition material. The manifold for a vacuum vapor deposition apparatus is a manifold for an in-line vacuum vapor deposition apparatus, and nozzle rows (14F, 14R) are provided on a substrate opposing surface (11a) of a single manifold (11) facing a substrate (12). ), the nozzle arrays (14F, 14R) protrude a plurality of ejection nozzles (13) having nozzle openings at a predetermined nozzle pitch (P) in the width direction of the substrate (12), and the nozzle arrays (14F, 14R) 14R) are arranged at a predetermined nozzle row interval (Lp) in the moving direction of the substrate (12), and the ejection nozzles (13) of the nozzle row (14R) behind the moving direction of the substrate (12) and the substrate (12) The ejection nozzles (13) of the nozzle row (14F) ahead in the moving direction are arranged to face each other in the moving direction of the substrate (12).
Description
Technical field
The present invention relates to a kind of vacuum deposition apparatus menifolds for being suitable for the manufacture of organic EL (electroluminescent) element, use
Linear sources carry out online (Inline) vapor deposition.
Background technique
Online vapor deposition mode is to make as by the menifold of the linear sources of evaporation material, is moved in the width direction with fixed speed
Dynamic is oppositely disposed by vapor deposition substrate, and sprays evaporation material from the ejection being arranged on menifold nozzle, makes to evaporate material
Material is attached to by the surface of vapor deposition substrate.
In the vacuum deposition apparatus of online vapor deposition mode, patent document 1 discloses following device: by linear sources menifold
As the crucible being vaporized for heating evaporation material, the longitudinal direction on the upper surface of crucible along crucible is formed with multiple
It sprays and uses nozzle, and in each ejection jet hole being respectively formed on nozzle for spraying evaporation material.
Patent document 1: Japanese patent gazette the 4380319th (Fig. 1)
However, it is necessary to which (adhesion amount is relative to evaporation capacity for the utilization efficiency for the evaporation materials such as high organic EL of improving price
Ratio).Therefore, it may be considered that keep ejection nozzle close by vapor deposition substrate, to make the jet hole as throttle orifice and be steamed
The vapor deposition distance of plating substrate shortens.When making vapor deposition distance shorten, in order to ensure adhering to the uniformity of film thickness, need to increase nozzle
Mouthful, it is close to each other so as to cause ejection nozzle.In addition, spraying becomes outlet with the jet hole of nozzle in order to adjust spray volume
The throttle orifice of gathering, but if the ratio between the bore of jet hole/ejection nozzle inside diameter is not ensured to be certain value or more, from
The film thickness distribution for the evaporation material that one ejection nozzle sprays is unstable.Accordingly, it is difficult to make jet hole close to setting.
As countermeasure, the bore of jet hole can be made to become smaller, but if the bore of jet hole is made to become smaller, spray runner
Conductivity become smaller.Therefore, in order to ensure defined vapor deposition rate, it is necessary to which the evaporating temperature for improving the evaporation material in crucible (adds
Hot temperature), but if improving evaporating temperature, some evaporation materials are easy deterioration, and are likely to increase operating cost.
Summary of the invention
To solve the above-mentioned problems, the purpose of the present invention is to provide the vacuum for the utilization efficiency that can be improved evaporation material
Evaporation coating device menifold.
The invention of mode 1 provides a kind of vacuum deposition apparatus menifold, be inline process type vacuum deposition apparatus menifold, with
Fixed speed is mobile to be oppositely disposed by vapor deposition substrate, sprays evaporation material from the multiple jet holes being arranged in opposed faces, and
Be attached to the evaporation material by the surface of vapor deposition substrate, wherein single menifold with by opposite pair of vapor deposition substrate
It sets and is provided with nozzle rows on face, the nozzle rows edge separates defined injector spacing by the width direction of vapor deposition substrate and is provided projectingly
Multiple ejection nozzles with the jet hole, and the edge of nozzle rows described in multiple row separates rule by the moving direction of vapor deposition substrate
Fixed interval configuration, is sprayed by the ejection of the ejection nozzle of the nozzle rows in front of vapor deposition base material moving direction and the nozzle rows at rear
Mouth is oppositely disposed on by the moving direction of vapor deposition substrate, when the nozzle inside diameter of ejection nozzle is D, nozzle length L, nozzle
When the bore of mouth is D ', D ' >=1mm, and meet D '≤2.7 × D in L >=9 × D2/ L meets D '≤D/ in L 9 × D of <
3。
The invention of mode 2 provides a kind of vacuum deposition apparatus menifold, be inline process type vacuum deposition apparatus menifold, with
Fixed speed movement is relatively configured menifold by vapor deposition substrate, sprays vapor deposition material from the multiple jet holes being arranged on menifold
Material, and it is attached to the evaporation material by the surface of vapor deposition substrate, wherein in the opposite with by vapor deposition substrate of single menifold
Opposed faces on be provided with nozzle rows, nozzle rows injector spacing as defined in separated by the width direction of vapor deposition substrate is prominent
Multiple ejection nozzles with jet hole are set, and the edge of nozzle rows described in multiple row separates rule by the moving direction of vapor deposition substrate
Fixed interval configuration, relative to by the ejection nozzle of the nozzle rows in front of vapor deposition base material moving direction, the spray of the nozzle rows at rear
It is configured on the intervening portion for deviating 1/2 injector spacing with nozzle out, when the nozzle inside diameter of ejection nozzle is D, nozzle length
When bore for L, jet hole is D ', D ' >=1mm, and meet D '≤2.7 × D in L >=9 × D2/ L expires in L 9 × D of <
Sufficient D '≤D/3.
The invention of mode 3 is on the basis of the structure that mode 1 or 2 is recorded, when the nozzle of the ejection nozzle of each nozzle rows
Spacing is P, jet hole and when being S by the vapor deposition distance of vapor deposition substrate, 1.11 × S of D ' < P <.
The invention of mode 4 is on the basis of the structure that any one of mode 1 to 3 is recorded, and by the width of vapor deposition substrate
It is corresponding, closing cock, the ejection of the closing cock closing end side are installed at least one nozzle rows in multiple nozzle rows
With the jet hole of nozzle.
According to invention described in mode 1, by by each ejection nozzle of the nozzle rows of front and back by vapor deposition base
It is oppositely disposed on the moving direction of material, compared with the case where nozzle rows are configured to a column, can be improved vapor deposition rate.It is as a result,
Make to reduce and the conductivity for spraying runner is made to become smaller the bore of jet hole, defined steaming can also be ensured by configuring multiple row
Plating rate.In addition, ejection nozzle meets D '≤2.7 × D by using in L >=9 × D according to invention described in mode 12/L、
And meeting D '≤D/3 ejection nozzle in L 9 × D of <, the disperse state of the evaporation material sprayed from jet hole is according to cosn
θ rule and become uniform state, so as to improve attachment film thickness uniformity.
According to invention described in mode 2, by configuring each ejection of the nozzle rows of front and back nozzle staggeredly
On position, even if ejection nozzle is made to ensure enough injector spacings in each nozzle rows, front observation can also be made to be deposited
Ejection nozzle configuration close to each other when substrate, to improve the uniformity of attachment film thickness.Thus, it is possible to make to spray with spray
It mouth and is shortened by the vapor deposition distance of vapor deposition substrate, and the uniformity for adhering to film thickness is made not to be deteriorated, so as to improve material
Utilization efficiency.
According to invention described in mode 3, if vapor deposition distance is S, the spray of the ejection nozzle by making each nozzle rows
Mouth spacing P is greater than the bore of jet hole and is less than S × 1.11, may be implemented as the film thickness within required for product ± 5%
Uniformity is deposited.
According to invention described in mode 4, when being narrowed by the width of vapor deposition substrate, pass through the spray of the end side in nozzle rows
It is closed out with closing cock is installed on the jet hole of nozzle, can inhibit unnecessarily to spray evaporation material, so as to drop
Low operating cost.
Detailed description of the invention
Figure 1A~Fig. 1 C indicates the embodiment 1 of vacuum deposition apparatus menifold of the invention, and Figure 1A is top view, Tu1BShi
Side view, Fig. 1 C are main views.
Fig. 2 is the skiagraph for indicating ejection nozzle.
Fig. 3 A, Fig. 3 B are the explanatory diagrams of the vapor deposition film thickness of the vapor deposition carried out in the way of online vapor deposition, and Fig. 3 A is to indicate to spray
Out with the schematic top of the configuration of nozzle, Fig. 3 B is the main view for indicating film thickness.
Fig. 4 is the main view for the Thickness Variation for indicating that the injector spacing because of ejection nozzle generates, and Fig. 4 A indicates narrow spray
The case where the case where mouth spacing, Fig. 4 B indicates wide injector spacing.
Fig. 5 is the coordinate diagram for indicating the range for making injector spacing of the film thickness uniformity less than ± 5% relative to vapor deposition distance.
Fig. 6 is indicated in ejection nozzle, (spraying the length L for using nozzle), and × (the bore D ' of jet hole)/(is sprayed and is used
Nozzle inside diameter D) and cosnThe coordinate diagram of relationship between the n value of θ rule.
Fig. 7 is indicated in ejection nozzle, (the bore D ' of jet hole)/(spray and use nozzle inside diameter D) and cosnθ rule
N value between relationship coordinate diagram.
Fig. 8 is the top view for indicating the embodiment 2 of vacuum deposition apparatus menifold of the invention.
Fig. 9 A~Fig. 9 C indicates the use state of menifold when substrate width changes, and Fig. 9 A indicates that substrate is moved along center line
The case where, Fig. 9 B indicates the situation that substrate is moved along side line, and Fig. 9 C indicates the vertical of the ejection nozzle for being equipped with closing cock state
Section.
Figure 10 is the top view for indicating the embodiment 3 of vacuum deposition apparatus menifold of the invention.
Specific embodiment
[embodiment 1]
Below based on FIG. 1 to FIG. 4, illustrate the embodiment of the vacuum deposition apparatus menifold of online vapor deposition mode of the invention
1。
As shown in Figure 1 and Figure 2, in the vacuum evaporation room for remaining vacuum state, above-mentioned menifold 11 is moved with fixed speed
The vapor deposited surface of dynamic substrate (by vapor deposition substrate) 12 is oppositely disposed.On the opposed faces 11a of menifold 11, moved respectively in substrate 12
The front and back in dynamic direction is provided with nozzle rows 14F, 14R, and multiple ejections of said nozzle column 14F, 14R are with nozzle 13 along width
Degree direction is provided projectingly with defined injector spacing P.Here, as shown in Fig. 2, injector spacing P refers in each nozzle rows 14F, 14R
The jet hole 15 of adjacent ejection nozzle 13 and the distance of jet hole 15.
The ejection of nozzle rows 14F, 14R of front and back is oppositely disposed on the moving direction of substrate 12 with nozzle 13.
In above-mentioned ejection with being respectively formed with jet hole 15 on the front end face of nozzle 13.In addition, in order to will be by crucible (not shown) to steaming
It plates material to carry out in evaporation material importing menifold 11 obtained from heating evaporation, in the opposite with nozzle 13 with ejection of menifold 11
Material introducing port 16 is formed on opposing face, material introducing port 16 is connect with the material ingress pipe 17 that internal diameter is d.
Nozzle rows 14F, 14R of front and back are configured to separate defined distance with material introducing port 16, and into one
Step is configured to separate nozzle rows interval Lp on the moving direction of substrate 12.Nozzle rows 14F, 14R and material introducing port of front and back
16 distance is to make the evaporation material supplied from material introducing port 16 equably import ejection nozzle 13.In addition, front and back
Nozzle rows 14F, 14R in both ends ejection with nozzle 13 configure corresponding with the both sides edge of substrate 12 of width Ws
On position.
Menifold 11 has the inner space that the evaporation material imported from material introducing port 16 can be made uniformly to spread, the menifold
11 formation anterior-posterior lengths are Lm, width Wm, are highly the cuboid of Hm, and are provided with and block on substrate opposed faces 11a
The coldplate (not shown) for carrying out the radiant heat of self-reference substrate 12, being provided on left and right side and front and back sides prevents evaporation material attached
Heater (not shown).Also, substrate 12 separates defined vapor deposition distance S relative to jet hole 15 and is moved.Pressure
The leading flank of menifold 11 is arranged in detection mouth 18, and the trailing flank of menifold 11 is arranged in vapor deposition rate detection mouth 19.
As shown in Fig. 2, the substrate that menifold 11 is uprightly arranged in the cylindric nozzle body 13a of ejection nozzle 13 is opposed
On the 11a of face, on the front end face of nozzle body 13a, the end plate 13b with jet hole 15 is installed to form throttle orifice.
If the bore of jet hole 15 is D ' (mm), the nozzle of the ejection nozzle 13 of each nozzle rows 14F, 14R
Spacing P meets formula below (1).
D ' < P < 1.11 × S ... formula (1)
That is, the configuration of the ejection nozzle 13 of inline process type menifold 11 is as shown in Figure 3A, relative to any substrate width
Deposited substrate 12, (theoretically) become limitless number column, when assuming that the ejection flow from whole ejections nozzle 13
When fixed, the film thickness uniformity of above-mentioned deposited substrate 12 is related with the injector spacing P of nozzle 13 to ejection.As shown in Figure 3B,
Right above the arrangement of ejection nozzle 13 to deposited substrate 12 be deposited film thickness distribution it is as follows: ejection nozzle 13 just
The accumulative film thickness that top is deposited is most thick, and the top of the intermediate point (1/2P) of adjacent ejection nozzle 13 is most thin.In addition,
Herein due to D ' < P, so not including the jet hole of slit-shaped.It is maximum also, as shown in Figure 4 A, if injector spacing P is small
The film thickness difference of film thickness and minimum thickness becomes smaller, as shown in Figure 4 B, if injector spacing P is big, maximum film thickness and minimum thickness
Film thickness difference becomes larger.When maximum film thickness is dmax, minimum thickness is dmin, film thickness uniformity is indicated using formula below (2).
Film thickness uniformity=[(dmax-dmin)/(dmax+dmin)] × 100 (%) ... formula (2)
In this way, since film thickness uniformity is related to maximum film thickness and minimum thickness, so related to injector spacing P.Also,
By making above-mentioned film thickness uniformity within ± 5%, it is able to maintain the quality of product.
Fig. 5 is that analog representation does not limit the number of ejection nozzle 13 and sprays from whole ejection nozzles 13 same amount of
When evaporation material, the coordinate diagram of the maximum value of injector spacing P of the film thickness uniformity less than ± 5% is made in the case where distance S is deposited.
It,, can by making injector spacing P be greater than D ' and less than 1.11 times of vapor deposition distance S as shown in formula (1) according to Fig. 5
So that film thickness uniformity is within ± 5% as product with practicability.
Although the utilization efficiency of material declines here, injector spacing P is smaller, more can be improved the uniformity of film thickness.
Therefore, the ejection nozzle 13 of the sequential like not comprising P≤D ', i.e. slit-shaped.In addition, in each nozzle rows 14F, 14R, it is mechanical
It is not intended to injector spacing P in 20mm or less in structure.In addition, as aftermentioned embodiment 2, when interconnected nozzle rows 14F,
When the ejection nozzle 13 of 14R, in the case where being observed from the front deposited substrate 12, injector spacing P can be approached ad infinitum
In 0, thereby, it is possible to take into account the utilization efficiency of film thickness uniformity and material.
In this way, injector spacing P is smaller, more can be improved the uniformity of film thickness, but the utilization efficiency of material declines.If
Make the uniformity of film thickness left and right within ± 5%, then injector spacing P can be made to broaden and improve the utilization efficiency of material.
Here, when the internal diameter of nozzle body 13a is D (mm), nozzle length is L (mm), the bore of jet hole 15 is D '
(mm) when, ejection nozzle 13 meets following formula (3).
When L >=9 × D, D '≤2.7 × D2/L
When L 9 × D of <, D '≤D/3 ... formula (3)
Organic material for forming organic EL film obtains above-mentioned formula (3).When meeting above-mentioned formula (3) [in Fig. 6 (L >=
When 9 × D) LD '/D2Greater than 0 and in 2.7 regions below or Fig. 7 (when L 9 × D of <) D '/D be greater than 0 and 1/3 with
Under region], the evaporation material sprayed from the jet hole 15 of each ejection nozzle 13 to substrate 12 is according to cosnθ rule, i.e. with
cosnθ curve approximation.At this point, since the evaporation material sprayed from the jet hole 15 of ejection nozzle 13 is on the surface of substrate 12
(vapor deposited surface) sufficiently diffusion is to be deposited, so can be improved the uniformity of film thickness.
As shown in fig. 6, when L >=9 × D, in D ' × L/D2Greater than 0 and in 2.7 regions below, n value is about 4.00~
4.25.In addition, as shown in fig. 7, when L 9 × D of <, it is greater than 0 in D '/D and in 1/3 region below, n value is about 4.05~
4.25.In cosnN value is smaller in θ rule, evaporates material gets over the diffusion into the surface in substrate 12 to be deposited, to improve film
Thick uniformity.Most preferably n value is about 4.05~4.10, at this point, being D ' × L/D when L >=9 shown in fig. 6 × D2Greater than 1.1
And at 1.8 regions below, 9 × D of L < shown in Fig. 7, it is greater than 0 for D '/D and in 0.18 region below.
Here, if it is as shown in fig. 6, D ' × L/D when L >=9 × D2Greater than 2.7, or as shown in fig. 7,9 × D of L <
When D '/D be greater than 1/3, then the evaporation material sprayed from the jet hole 15 of each ejection nozzle 13 to substrate 12 is not according to cosnθ is fixed
Then, it is not deposited equably on the substrate 12.As a result, the film thickness of the part opposite with jet hole 15 of substrate 12 excessively becomes
Thickness hampers uniformity.In addition, herein from the viewpoint of machining accuracy, such as the bore D ' of jet hole 15 is set in 1mm
More than.
In accordance with the above-mentioned embodiment 1, the front and back of 12 moving direction of substrate is provided with nozzle rows 14F, 14R, it is above-mentioned
Nozzle rows 14F, 14R configure ejection nozzle 13 with defined injector spacing P, are matched by opposite on the moving direction of substrate 12
Each ejection nozzle 13 is set, evaporation rate can be improved.Even if as a result, the bore of jet hole 15 it is small and make spray runner conduction
Rate becomes smaller, and defined vapor deposition rate can also be configured to ensure that by multiple row.
In addition, by making the injector spacing P of the ejection of each nozzle rows 14F, 14R nozzle 13 be greater than the bore of jet hole 15
D ' and be less than vapor deposition 1.11 times of distance S, can make film thickness uniformity ± 5% required for as product within.
In addition, meeting D '≤2.7 × D when by using L >=9 × D in nozzle 13 in each ejection2When/L, L 9 × D of <
Meet D '≤D/3 ejection nozzle 13, the disperse state of the evaporation material sprayed from jet hole 15 can be made according to cosnθ is fixed
Then become uniformly, so as to improve the uniformity of attachment film thickness.
[embodiment 2]
The embodiment 2 of Fig. 8, Fig. 9 expression vacuum deposition apparatus menifold.It is same as Example 1 in the present embodiment 2
Component uses identical appended drawing reference, and explanation is omitted.
On the opposed faces 11a opposite with substrate 12s of single menifold 11, in the front of substrate 12s moving direction with after
Side is respectively arranged with nozzle rows 14F, 14R, and said nozzle column 14F, 14R are set in the width direction with defined injector spacing P protrusion
Set multiple ejection nozzles 13 with jet hole 15.The ejection of nozzle rows 14F, 14R of above-mentioned front and back nozzle 13
In, ejection nozzle 13 of the ejection of the nozzle rows 14R at rear with nozzle 13 relative to the nozzle rows 14F in front is configured in position
On the intervening portion for deviating 1/2P.
It sprays same as Example 1 with the structure of nozzle 13.
Fig. 9 indicates use state when forming a film in example 2 to the substrate 12s that width is Wn, the substrate 12s
Width be less than it is usual when width be Ws substrate 12.In this case, due to the spray from the end of nozzle rows 14F, 14R
It is unnecessarily sprayed with the evaporation material that nozzle 13E sprays out, so as shown in Figure 9 C, pacifying on the ejection nozzle 13E of end
Equipped with closing cock 21, it is deposited in such a way that the ejection of the end does not spray evaporation material with nozzle 13E.
In above-described embodiment 2, the setting quantity of the ejection nozzle 13E of the nozzle rows 14F relative to front, rear
The ejection of nozzle rows 14R is one few with nozzle 13.Such as shown in Fig. 9 A, when making substrate 12s mobile on the basis of center line CL,
In the nozzle rows 14F in the front more than the ejection setting quantity of nozzle 13, ejection installation on nozzle 13E in two end sides is closed
Plug 21 is deposited in such a way that the ejection of two end sides does not spray evaporation material with nozzle 13E.In addition, when using side line SL as base
When standard keeps substrate 12s mobile, two ejections with side line SL opposite side in the nozzle rows 14F in front with nozzle 13E and
An ejection with side line SL opposite side in the nozzle rows 14R at rear is with closing cock 21 is installed on nozzle 13E, with above-mentioned ejection
It is deposited with the mode that nozzle 13E does not spray evaporation material.Even the substrate 12s small to width is deposited as a result,
Evaporation material will not be sprayed, unnecessarily so as to improve the utilization efficiency of evaporation material.Also, it can also be by above-mentioned closing
Plug 21 is installed on the ejection nozzle 13 of embodiment 1.
According to above-described embodiment 2, the front and back of substrate 12s moving direction is provided with nozzle rows 14F, 14R, it is above-mentioned
Nozzle rows 14F, 14R configure ejection nozzle 13 with defined injector spacing P, by being configured to each ejection nozzle 13 in width
Positional shift is staggered on degree direction, does not make ejection nozzle 13 is close to each other multiple jet holes 15 can be arranged.As a result,
The vapor deposition distance of jet hole 15 and substrate 12s can be made to shorten, and the uniformity of attachment film thickness can be kept and improve material
Utilization efficiency.
In addition, passing through the ejection use in nozzle rows 14F, 14R end side when the substrate 12s small to width is deposited
Closing cock 21 is installed on nozzle 13E, will not unnecessarily spray evaporation material, so as to improve the utilization efficiency of evaporation material.
[embodiment 3]
The embodiment 3 of Figure 10 expression vacuum deposition apparatus menifold.With above-described embodiment 1,2 identical components using identical
Appended drawing reference, and explanation is omitted.
It is configured with nozzle rows 14F, 14R of front and back on the substrate opposed faces 11a of above-mentioned menifold 11, and makes
State next two columns 14Ff, 14Fr, 14Rf, 14Rr before nozzle rows 14F, 14R are respectively.Also, the ejection of each forefront 14Ff, 14Rf are used
Nozzle 13 deviates 1/2P in the width direction of substrate 12 relative to the ejection nozzle 13 of rank rear 14Fr, 14Rr and configures and handing over
On wrong position.
According to above-described embodiment 3, function and effect identical with embodiment 1 and embodiment 2 can be obtained.
Claims (6)
1. a kind of vacuum deposition apparatus menifold is inline process type vacuum deposition apparatus menifold, with the quilt mobile with fixed speed
Substrate relative configuration is deposited, sprays evaporation material from the multiple jet holes being arranged in opposed faces, and keep the evaporation material attached
On by the surface of vapor deposition substrate,
The vacuum deposition apparatus menifold is characterized in that,
Nozzle rows are provided in the opposed faces opposite with by vapor deposition substrate of single menifold, the nozzle rows are along by vapor deposition substrate
Width direction separate as defined in injector spacing be provided projectingly multiple ejection nozzles with the jet hole, and multiple row institute
It states nozzle rows and separates specified interval configuration along by the moving direction of vapor deposition substrate,
By the ejection nozzle of the nozzle rows in front of vapor deposition base material moving direction and the ejection nozzle of the nozzle rows at rear in quilt
It is deposited on the moving direction of substrate and is oppositely disposed,
When the nozzle inside diameter of ejection nozzle is D, the bore of nozzle length L, jet hole is D ',
D ' >=1mm, and
Meet D '≤2.7 × D in L >=9 × D2/ L,
Meet D '≤D/3 in L 9 × D of <.
2. vacuum deposition apparatus menifold according to claim 1, which is characterized in that
When the injector spacing of the ejection of each nozzle rows nozzle is P, jet hole and when by the vapor deposition distance of vapor deposition substrate being S,
1.11 × S of D ' < P <.
3. vacuum deposition apparatus menifold according to claim 1, which is characterized in that with by the width pair of vapor deposition substrate
It answers, closing cock is installed at least one nozzle rows in multiple nozzle rows, the ejection of the closing cock closing end side is used
The jet hole of nozzle.
4. a kind of vacuum deposition apparatus menifold is inline process type vacuum deposition apparatus menifold, with the quilt mobile with fixed speed
Substrate relative configuration is deposited, sprays evaporation material from the multiple jet holes being arranged in opposed faces, and keep the evaporation material attached
On by the surface of vapor deposition substrate,
The vacuum deposition apparatus menifold is characterized in that,
Nozzle rows are provided in the opposed faces opposite with by vapor deposition substrate of single menifold, the nozzle rows are along by vapor deposition substrate
Width direction separate as defined in injector spacing be provided projectingly multiple ejection nozzles with the jet hole, and multiple row institute
It states nozzle rows and separates specified interval configuration along by the moving direction of vapor deposition substrate,
Relative to by the ejection nozzle of the nozzle rows in front of vapor deposition base material moving direction, the ejection nozzle of the nozzle rows at rear
It configures on the intervening portion for deviating 1/2 injector spacing,
When the nozzle inside diameter of ejection nozzle is D, the bore of nozzle length L, jet hole is D ',
D ' >=1mm, and
Meet D '≤2.7 × D in L >=9 × D2/ L,
Meet D '≤D/3 in L 9 × D of <.
5. vacuum deposition apparatus menifold according to claim 4, which is characterized in that
When the injector spacing of the ejection of each nozzle rows nozzle is P, jet hole and when by the vapor deposition distance of vapor deposition substrate being S,
1.11 × S of D ' < P <.
6. vacuum deposition apparatus menifold according to claim 4, which is characterized in that with by the width pair of vapor deposition substrate
It answers, closing cock is installed at least one nozzle rows in multiple nozzle rows, the ejection of the closing cock closing end side is used
The jet hole of nozzle.
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| JP2013220694 | 2013-10-24 | ||
| JP2013-220694 | 2013-10-24 |
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| KR (1) | KR102192500B1 (en) |
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| WO2017018314A1 (en) * | 2015-07-28 | 2017-02-02 | シャープ株式会社 | Vapor deposition source, vapor deposition apparatus and method for producing vapor-deposited film |
| KR102367988B1 (en) * | 2017-07-31 | 2022-02-28 | 삼성디스플레이 주식회사 | Apparatus and method for manufacturing a display apparatus |
| CN108570645B (en) * | 2017-11-30 | 2023-09-29 | 上海微电子装备（集团）股份有限公司 | Vacuum evaporation device, evaporation head thereof and vacuum evaporation method |
| CN114341357B (en) | 2019-08-30 | 2024-09-10 | 国立大学法人筑波大学 | Fruit plants showing high temperature tolerance, high yield and parthenocarpy |
| JP7247142B2 (en) * | 2020-06-25 | 2023-03-28 | キヤノントッキ株式会社 | Vapor deposition device and evaporation source |
| KR20230030645A (en) * | 2020-06-29 | 2023-03-06 | 어플라이드 머티어리얼스, 인코포레이티드 | Nozzle assembly, evaporation source, and method for depositing evaporated material onto a substrate |
| US20220033958A1 (en) * | 2020-07-31 | 2022-02-03 | Applied Materials, Inc. | Evaporation source, vapor deposition apparatus, and method for coating a substrate in a vacuum chamber |
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| TWI661067B (en) | 2019-06-01 |
| KR20150048620A (en) | 2015-05-07 |
| CN104561903A (en) | 2015-04-29 |
| JP2015108185A (en) | 2015-06-11 |
| TW201516166A (en) | 2015-05-01 |
| JP6671095B2 (en) | 2020-03-25 |
| KR102192500B1 (en) | 2020-12-17 |
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