TWI659262B - 光罩之修正方法、光罩之製造方法、光罩及顯示裝置之製造方法 - Google Patents
光罩之修正方法、光罩之製造方法、光罩及顯示裝置之製造方法 Download PDFInfo
- Publication number
- TWI659262B TWI659262B TW107124915A TW107124915A TWI659262B TW I659262 B TWI659262 B TW I659262B TW 107124915 A TW107124915 A TW 107124915A TW 107124915 A TW107124915 A TW 107124915A TW I659262 B TWI659262 B TW I659262B
- Authority
- TW
- Taiwan
- Prior art keywords
- light
- pattern
- film
- photomask
- correction
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 74
- 238000004519 manufacturing process Methods 0.000 title claims description 30
- 238000012937 correction Methods 0.000 claims abstract description 172
- 238000012546 transfer Methods 0.000 claims abstract description 95
- 230000007547 defect Effects 0.000 claims abstract description 83
- 238000002834 transmittance Methods 0.000 claims abstract description 83
- 239000000758 substrate Substances 0.000 claims abstract description 66
- 230000010363 phase shift Effects 0.000 claims abstract description 56
- 238000000059 patterning Methods 0.000 claims abstract description 6
- 239000000463 material Substances 0.000 claims description 27
- 238000009826 distribution Methods 0.000 claims description 9
- 230000005540 biological transmission Effects 0.000 claims description 3
- 230000001502 supplementing effect Effects 0.000 claims description 2
- 238000005516 engineering process Methods 0.000 abstract description 3
- 239000010408 film Substances 0.000 description 253
- 230000003287 optical effect Effects 0.000 description 27
- 229920002120 photoresistant polymer Polymers 0.000 description 24
- 238000005401 electroluminescence Methods 0.000 description 21
- 230000000694 effects Effects 0.000 description 19
- 230000015572 biosynthetic process Effects 0.000 description 15
- 230000008859 change Effects 0.000 description 11
- 239000011651 chromium Substances 0.000 description 8
- 238000013461 design Methods 0.000 description 8
- 239000002994 raw material Substances 0.000 description 7
- 238000001039 wet etching Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 5
- 229910052804 chromium Inorganic materials 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 239000004973 liquid crystal related substance Substances 0.000 description 5
- 238000004458 analytical method Methods 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000011161 development Methods 0.000 description 4
- 238000001182 laser chemical vapour deposition Methods 0.000 description 4
- 239000010410 layer Substances 0.000 description 4
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 238000007689 inspection Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 238000013041 optical simulation Methods 0.000 description 3
- 238000004088 simulation Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 238000012795 verification Methods 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 239000012788 optical film Substances 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 238000004380 ashing Methods 0.000 description 1
- FQNHWXHRAUXLFU-UHFFFAOYSA-N carbon monoxide;tungsten Chemical compound [W].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-] FQNHWXHRAUXLFU-UHFFFAOYSA-N 0.000 description 1
- 150000001728 carbonyl compounds Chemical class 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- -1 oxynitrides Chemical class 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 238000004513 sizing Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/72—Repair or correction of mask defects
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/1303—Apparatus specially adapted to the manufacture of LCDs
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/28—Phase shift masks [PSM]; PSM blanks; Preparation thereof with three or more diverse phases on the same PSM; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/70—Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
- G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Nonlinear Science (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Optics & Photonics (AREA)
- Health & Medical Sciences (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017-152315 | 2017-08-07 | ||
| JP2017152315 | 2017-08-07 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201910910A TW201910910A (zh) | 2019-03-16 |
| TWI659262B true TWI659262B (zh) | 2019-05-11 |
Family
ID=65367590
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW107124915A TWI659262B (zh) | 2017-08-07 | 2018-07-19 | 光罩之修正方法、光罩之製造方法、光罩及顯示裝置之製造方法 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP7123679B2 (ja) |
| KR (2) | KR102207837B1 (ja) |
| CN (1) | CN109388018B (ja) |
| TW (1) | TWI659262B (ja) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7437959B2 (ja) * | 2019-03-07 | 2024-02-26 | Hoya株式会社 | 修正フォトマスク、及び表示装置の製造方法 |
| JP7429583B2 (ja) | 2020-03-30 | 2024-02-08 | Hoya株式会社 | リソグラフィマスクの製造方法、リソグラフィマスク、および、半導体装置の製造方法 |
| JP7461220B2 (ja) | 2020-05-25 | 2024-04-03 | 株式会社エスケーエレクトロニクス | フォトマスクの修正方法 |
| DE102020208980B4 (de) * | 2020-07-17 | 2026-01-15 | Carl Zeiss Smt Gmbh | Verfahren und Vorrichtung zum Reparieren eines Defekts einer lithographischen Maske |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050158638A1 (en) * | 1992-12-07 | 2005-07-21 | Renesas Technology Corp. | Photomask and pattern forming method employing the same |
| TW200848919A (en) * | 2007-03-31 | 2008-12-16 | Hoya Corp | Method of correcting a defect in a gray tone mask, method of manufacturing a gray tone mask, gray tone mask, and method of transferring a pattern |
| EP2397900A1 (en) * | 2009-02-16 | 2011-12-21 | Dai Nippon Printing Co., Ltd. | Photomask and methods for manufacturing and correcting photomask |
| TW201514609A (zh) * | 2013-08-21 | 2015-04-16 | 大日本印刷股份有限公司 | 遮罩毛胚、附有負型阻劑膜之遮罩毛胚、相位移遮罩及使用其之圖案形成體之製造方法 |
| WO2015156016A1 (ja) * | 2013-08-20 | 2015-10-15 | 大日本印刷株式会社 | マスクブランクス、位相シフトマスク及びその製造方法 |
| TWI604264B (zh) * | 2014-09-29 | 2017-11-01 | Ｈｏｙａ股份有限公司 | 光罩及顯示裝置之製造方法 |
| CN108267927A (zh) * | 2011-12-21 | 2018-07-10 | 大日本印刷株式会社 | 大型相移掩膜 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3354305B2 (ja) * | 1993-09-24 | 2002-12-09 | 大日本印刷株式会社 | 位相シフトマスクおよび位相シフトマスクの欠陥修正方法 |
| US6927003B2 (en) * | 2003-02-11 | 2005-08-09 | Synopsys, Inc. | Simulation based PSM clear defect repair method and system |
| JP4752495B2 (ja) * | 2005-12-22 | 2011-08-17 | 大日本印刷株式会社 | 階調をもつフォトマスクの欠陥修正方法 |
| JP5036349B2 (ja) * | 2007-02-28 | 2012-09-26 | Ｈｏｙａ株式会社 | グレートーンマスクの欠陥修正方法及びグレートーンマスクの製造方法 |
| TWI440964B (zh) | 2009-01-27 | 2014-06-11 | Ｈｏｙａ股份有限公司 | 多調式光罩、多調式光罩之製造方法及圖案轉印方法 |
| JP6581759B2 (ja) * | 2014-07-17 | 2019-09-25 | Hoya株式会社 | フォトマスク、フォトマスクの製造方法、フォトマスクブランク及び表示装置の製造方法 |
| JP2017076146A (ja) * | 2016-12-26 | 2017-04-20 | Hoya株式会社 | フォトマスクの製造方法、フォトマスク、パターン転写方法及び表示装置の製造方法 |
| JP2017068281A (ja) * | 2016-12-27 | 2017-04-06 | Hoya株式会社 | フォトマスクの製造方法、パターン転写方法及び表示装置の製造方法 |
-
2018
- 2018-07-19 TW TW107124915A patent/TWI659262B/zh active
- 2018-07-23 JP JP2018137968A patent/JP7123679B2/ja active Active
- 2018-07-31 KR KR1020180089232A patent/KR102207837B1/ko active Active
- 2018-08-03 CN CN201810877657.4A patent/CN109388018B/zh active Active
-
2021
- 2021-01-20 KR KR1020210008114A patent/KR102384667B1/ko active Active
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050158638A1 (en) * | 1992-12-07 | 2005-07-21 | Renesas Technology Corp. | Photomask and pattern forming method employing the same |
| TW200848919A (en) * | 2007-03-31 | 2008-12-16 | Hoya Corp | Method of correcting a defect in a gray tone mask, method of manufacturing a gray tone mask, gray tone mask, and method of transferring a pattern |
| TWI378318B (en) * | 2007-03-31 | 2012-12-01 | Hoya Corp | Method of correcting a defect in a gray tone mask, method of manufacturing a gray tone mask, gray tone mask, and method of transferring a pattern |
| EP2397900A1 (en) * | 2009-02-16 | 2011-12-21 | Dai Nippon Printing Co., Ltd. | Photomask and methods for manufacturing and correcting photomask |
| EP2738791A2 (en) * | 2009-02-16 | 2014-06-04 | Dai Nippon Printing Co., Ltd. | Method for correcting a photomask |
| US20150140480A1 (en) * | 2009-02-16 | 2015-05-21 | Dai Nippon Printing Co., Ltd. | Photomask and methods for manufacturing and correcting photomask |
| CN108267927A (zh) * | 2011-12-21 | 2018-07-10 | 大日本印刷株式会社 | 大型相移掩膜 |
| WO2015156016A1 (ja) * | 2013-08-20 | 2015-10-15 | 大日本印刷株式会社 | マスクブランクス、位相シフトマスク及びその製造方法 |
| TW201514609A (zh) * | 2013-08-21 | 2015-04-16 | 大日本印刷股份有限公司 | 遮罩毛胚、附有負型阻劑膜之遮罩毛胚、相位移遮罩及使用其之圖案形成體之製造方法 |
| TWI604264B (zh) * | 2014-09-29 | 2017-11-01 | Ｈｏｙａ股份有限公司 | 光罩及顯示裝置之製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20190015997A (ko) | 2019-02-15 |
| JP7123679B2 (ja) | 2022-08-23 |
| CN109388018A (zh) | 2019-02-26 |
| CN109388018B (zh) | 2022-06-17 |
| KR102207837B1 (ko) | 2021-01-26 |
| KR102384667B1 (ko) | 2022-04-08 |
| JP2019032520A (ja) | 2019-02-28 |
| KR20210010610A (ko) | 2021-01-27 |
| TW201910910A (zh) | 2019-03-16 |
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