TWI378318B - Method of correcting a defect in a gray tone mask, method of manufacturing a gray tone mask, gray tone mask, and method of transferring a pattern - Google Patents
Method of correcting a defect in a gray tone mask, method of manufacturing a gray tone mask, gray tone mask, and method of transferring a pattern Download PDFInfo
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- TWI378318B TWI378318B TW097111158A TW97111158A TWI378318B TW I378318 B TWI378318 B TW I378318B TW 097111158 A TW097111158 A TW 097111158A TW 97111158 A TW97111158 A TW 97111158A TW I378318 B TWI378318 B TW I378318B
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/72—Repair or correction of mask defects
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
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Description
1378318 修正本 九、發明說明： 【發明所屬之技術領域】 本發明係關於用於液晶顯示裝置製造等之衣階遮罩 的缺陷修正方法、灰階遮罩的製造方法及灰階遮罩以及 . 圖案轉印方法。本發明特別是關於灰階遮罩的缺陷修正 方法、灰階遮罩的製造方法及灰階遮罩，其適合使用於 薄膜電晶體液晶顯示裝置之製造所使用的薄膜電晶體基 板之製造。 & 【先前技術】 在現在之液晶顯示裝置（Liquid Crystal Display :以 下稱為LCD)的領域中，薄膜電晶體液晶顯示裝置（ΤΙιίη[Technical Field] The present invention relates to a defect correction method for a clothing level mask for manufacturing a liquid crystal display device, a gray scale mask manufacturing method, and a gray scale mask. Pattern transfer method. More particularly, the present invention relates to a defect correction method for a gray scale mask, a method of manufacturing a gray scale mask, and a gray scale mask, which is suitable for use in the manufacture of a thin film transistor substrate used in the manufacture of a thin film transistor liquid crystal display device. & [Prior Art] In the field of liquid crystal display (hereinafter referred to as LCD), thin film transistor liquid crystal display device (ΤΙιίη
Film Transistor Liquid Crystal Display :以下稱為 TFT- LCD)與CRT(陰極射線管）比較，因其容易作成輕薄且耗 電小的優點，所以，其商品化程度已獲得迅速的普及。 TFT-LCD具有在液晶相之介設-p，使TFT基板與彩色滤光 片重疊的大致構造’其中，TFT基板係在排列成矩陣狀 _ 之各像素配置TFT的構造，而彩色濾光片係對應於各像 素配置有紅（red)、綠（green)及藍（blue)之像素圖案。 TFT-LCD之製造步驟數繁多，單就tft基板，便須使用5 〜6片之光罩進行製造。在此種之狀況下，提出使用4片 之光罩進行TFT基板之製造的方法（例如，非專利文獻1 :「月刊FPD Intelligence」、1999年 5月、ρ·31-35)。 此方法係藉由使用具有遮光部、透光部及半透光部（ 灰階部）之光罩（以下稱為灰階遮罩），以減低使用之遮罩 月數。在此’半透光部係指在使用遮罩將圖案轉印於被 1378318 修正本 轉印體上時’使透過之曝光光線的透光量減低預定量， 以控制被轉印體上之光阻膜顯像後的殘膜量之部分。在 此’稱同時具備此種半透光部、遮光部、透光部之光罩 為灰階遮罩。 . 第1A〜第1 C圖及第2A〜第2C圖顯示使用灰階遮罩 的TFT基板之製造步驟的一例。第2a〜第2c圖顯示第… 圖之製造步轉的後續步帮。 在玻璃基板1上形成閘極電極用金屬膜，藉由使用光 籲罩之光微影製程，形成閘極電極2。其後，依序形成閉極 •絕緣膜3、第1半導體膜4(a_Si :非晶矽）、第2半導體膜 5(N + a-Si)、源極_汲極用金屬膜6、及正型光阻膜”第以 圖）。接著，使用具有遮光部u、透光部12及半透光部13 之灰階遮罩10，對正型光阻膜7進行曝光及顯像。藉此， 形成第1光阻圖案7a，其被覆TFT通道部形成區域及源極_ 汲極形成區域 '和資料線形成區域，且以TFT通道部形 成區域成為比源極-汲極形成區域更薄的方式所形成（第 φ 1B圖）。接著’將第1光阻圖案7a作為遮罩，對源極_汲極 用金屬膜6及第2,第1半導體膜5,4進行蝕刻（第1(：圖）。 接者藉由氧之β洗除去TFT通道部形成區域的薄 光阻膜，形成第2光阻圖案7b(第2A圖）。然後，將第2光 阻圖案7b作為遮罩，對源極-汲極用金屬膜6進行蝕刻， 以形成源極/汲極6a，6b，然後蝕刻處理第2半導體膜5( 第2B圖）最後，將殘留之第2光阻圖案7b剝離（第2C圖） 〇 作為在此處所使用之灰階遮罩，已知一種以微細圖 1378318 修正本 案形成半透光部之構造者。例如，如第3圖所示，灰階遮 罩10具有：遮光部11a，lib’其對應於源極-汲極形成區域 ’透光部12;及半透光部（灰階部）13，其對應於tft通道 部形成區域。半透光部13係形成了遮光圖案13a的區域， . 此遮光圖案13a係由使用灰階遮罩之LCD用曝光機的析 像界限以下之微細圖案所構成。遮光部11a，lib及遮光圖 案13a’通常’皆由鉻或鉻化合物等之相同材料所構成的 相同厚度之膜所形成。使用灰階遮罩之LCD用曝光機的 φ 析像界限，在多數之情況下，步進式曝光機約為3μιη， 而反射投影型的曝光機約為4 μιη。因此，例如在第3圖中 ’可設半透光部13之透光部13b的線間寬度為未滿3μπ1， 設遮光圖案13a之線寬為曝光機的析像界限以下且未滿 3 μπι。 在形成上述微細圖案型之半透光部的情況，被進行 灰階部分之設計。具體而言，進行使具有遮光部及透光 部之中間半色調效果的微細圖案，為線-線間型、或點（ 網點）型、或其他之圖案的選擇。又，在線-線間型之情 況’需考慮到將線寬作成多少大小、或透光之部分與遮 光之部分的比率為多少、或將整體之透光率設計成多少 大小等，進行設計。 另一方面’提出將欲進行半色調曝光之部分作為半 透光性之半色調膜（半透光膜）（例如，專利文獻1:日本特 開2 0 0 2 -1 8 9 2 8 0號公報）。利用此半色調膜，可減少半色 調部分之曝光量，來進行半色調曝光。在使用半色調膜 之情況，在設計上需要檢討整體透光率為多少大小，且 修正本 f遮罩上選擇半色調膜之膜種（素材）或是膜厚便可進 ^遮罩之生產。在遮罩製造中，進行半色調膜之膜厚控 ^1。在由灰階遮罩之灰階部形成TFT通道部之情況，若 .是半色調膜的話，可藉由光微影步驟而容易進行圖案加 ‘工，所以，具有即使TFT通道部之形狀為複雜之圖案形 狀’仍可形成之優點。 另外’在專利文獻2(日本特開2004-3095 1 5號公報） 揭示一種灰階遮罩的缺陷修正方法，其記載有在具有遮 •光部、透光部及灰階部之灰階遮罩中，在修正灰階部的 缺陷時，以灰階部之膜成為可獲得正常灰階效果的膜厚 的方式，藉由使用 FIB(F〇CUSed I0n Beam Dep〇siti〇n)之 钱刻，進行膜厚之減薄或膜形成。 【發明内容】 在該專利文獻Is己載的灰階遮罩中，無法避免在由半 透光膜所構成之灰階部產生的缺陷。 另一方面’根據該專利文獻2之缺陷修正方法，在灰 φ階部具有微細圖案之灰階遮罩中’可對此微細圖案部分 所產生之缺陷，進行較為容易且修正度高之修正。亦即 ’專利文獻2之缺陷修正方法，解決了當正常圖案係微細 圖案’所以，在產生缺陷時難以將此微細圖案復原成相 同形狀的情況’所採例如’在使用雷射CVD裝置而於白 缺陷部分形成遮光膜、或是除去黑缺陷部分後再度形成 遮光膜的方法中’不容易控制透光率以獲得適宜之灰階 效果的課題。 又，在此’分別稱因膜圖案的剩餘、或遮光膜成分 1378318 修正本 之附著、或異物，而使得透光率比預定更低之缺陷為黑 缺Pta，稱因膜圖案之不足，而使得透光率比預定更高之 缺陷為白缺陷。 另一方面，在半透光部’使用半透光膜來控制曝光 光線之透光量的類型之灰階遮罩中，在因該半透光膜之 欠缺而產生白缺陷的情況，理想上，只要可位置精度高 地形成與有欠缺之該缺陷部分相同尺寸及相同形狀之修 正膜來進行修正即可。在黑缺陷的情況，在除去黑缺陷 部分之膜後，同樣只要可形成與除去部分相同尺寸及相 同形狀之修正膜即可。然而，在實際情況中卻很難進 行此種L正》例如，當為了缺陷修正而形成之膜部分與 缺陷周邊部分相重疊時’此部分之透光量變得比所需值 低，而有形成新的黑缺陷之掛慮。或是，若在為了缺陷 修正而形成之膜部分與缺陷周邊部分之間形成有間隙的 5此P刀之透光率成為與透光部相等而形成白缺陷。 參照第4A，4B圖、第5A〜5C圖、第6八〜6(：圖、及第 7A〜7C圖來說明上述問題點。此等之圖顯示將半透光部 作為半色調膜（半透光膜）的灰階遮罩之一例。亦即，灰 階遮罩6〇具備形成為預定圖案狀之遮光部61、透光部62 及半透光部63»例如，如第5A，5B圖所示，遮光部η係構 成為於透明基板64上具有遮光膜65 ’透光部62係由透明 基板64露出之部分所構成。又，半透光部63係構成為於 透明基板64上具有半透光膜66。又，第5B圖為沿第5AB| 中之L_L線的剖視圖，第5C圖顯示第5B圖所示截面之透 光率（T)。第6A〜6C圖及第7A〜7C圖亦相同。 1378318 修正本 如第4 A圖所示Film Transistor Liquid Crystal Display (hereinafter referred to as TFT-LCD) is popular in comparison with CRT (Cathode Ray Tube) because it is easy to be thin and consumes power. Therefore, the degree of commercialization has been rapidly spread. The TFT-LCD has a structure in which -p is placed in the liquid crystal phase to overlap the TFT substrate and the color filter. The TFT substrate is arranged in a matrix in which pixels are arranged in a matrix, and the color filter corresponds to the color filter. A pixel pattern of red, green, and blue is disposed in each pixel. TFT-LCDs have a large number of manufacturing steps. For a single tft substrate, a 5 to 6 photomask must be used for fabrication. In such a case, a method of manufacturing a TFT substrate using four photomasks has been proposed (for example, Non-Patent Document 1: "French FMD Intelligence", May 1999, ρ. 31-35). In this method, a mask having a light-shielding portion, a light-transmitting portion, and a semi-transmissive portion (gray-scale portion) (hereinafter referred to as a gray scale mask) is used to reduce the number of mask months used. Here, the 'semi-transmissive portion' means that when the pattern is transferred onto the 1378318 correction type transfer body by using a mask, the amount of light transmitted through the exposure light is reduced by a predetermined amount to control the light on the transfer target. The portion of the residual film after the film is developed. Here, the photomask having such a semi-transmissive portion, a light-shielding portion, and a light-transmitting portion is referred to as a gray scale mask. 1A to 1C and 2A to 2C show an example of a manufacturing procedure of a TFT substrate using a gray scale mask. Figures 2a to 2c show the next step of the manufacturing step of the figure. A metal film for a gate electrode is formed on the glass substrate 1, and the gate electrode 2 is formed by a photolithography process using a photomask. Thereafter, the closed/insulating film 3, the first semiconductor film 4 (a_Si: amorphous germanium), the second semiconductor film 5 (N + a-Si), the source/drain metal film 6, and the like are sequentially formed. The positive-type resist film is shown in Fig. 1. Next, the positive-type resist film 7 is exposed and developed by using the gray-scale mask 10 having the light-shielding portion u, the light-transmitting portion 12, and the semi-light-transmitting portion 13. Thus, the first photoresist pattern 7a is formed, which covers the TFT channel portion forming region and the source/drain forming region' and the data line forming region, and the TFT channel portion forming region is thinner than the source-drain forming region. In the first step, the first photoresist pattern 7a is used as a mask, and the source/drain metal film 6 and the second and first semiconductor films 5 and 4 are etched (first). (: Fig.) The second photoresist pattern 7b (Fig. 2A) is formed by removing the thin photoresist film in the TFT channel portion forming region by oxygen β. Then, the second photoresist pattern 7b is used as a mask. The source-drain is etched by the metal film 6 to form the source/drain electrodes 6a, 6b, and then the second semiconductor film 5 is etched (Fig. 2B). Finally, the remaining second photoresist pattern 7b is left. Peeling (Fig. 2C) As a gray scale mask used herein, a structure in which the semi-transmissive portion is formed by the micrograph 1378318 is known. For example, as shown in Fig. 3, the gray scale mask 10 The light-shielding portion 11a, lib' corresponds to the source-drain formation region 'transmissive portion 12; and the semi-transmissive portion (gray-scale portion) 13 corresponding to the tft channel portion forming region. A region in which the light-shielding pattern 13a is formed, and the light-shielding pattern 13a is formed of a fine pattern below the resolution limit of the exposure machine for LCD using a gray scale mask. The light-shielding portions 11a, lib and the light-shielding pattern 13a' are generally Formed by a film of the same thickness composed of the same material such as chrome or a chromium compound. The φ resolution limit of the exposure machine for LCD using a gray scale mask, in most cases, the stepper is about 3 μm, The reflective projection type exposure machine is about 4 μm. Therefore, for example, in Fig. 3, the line width of the light transmitting portion 13b of the semi-transmissive portion 13 may be less than 3 μπ1, and the line width of the light shielding pattern 13a is Below the resolution limit of the exposure machine and less than 3 μπι. In the case of the semi-transmissive portion of the fine pattern type, the design of the gray scale portion is performed. Specifically, the fine pattern having the intermediate halftone effect of the light shielding portion and the light transmitting portion is made to be a line-to-line type, or The choice of point (mesh) type, or other patterns. In addition, the case of online-line type should take into account how much the line width is made, or the ratio of the light-transmitting portion to the light-shielding portion, or the whole On the other hand, it is proposed to design a portion to be subjected to halftone exposure as a semi-transmissive halftone film (semi-transmissive film) (for example, Patent Document 1: Japanese Patent) Open 2 0 0 2 -1 8 9 2 8 0 bulletin). With this halftone film, the amount of exposure of the halftone portion can be reduced to perform halftone exposure. In the case of using a halftone film, it is necessary to review the overall light transmittance in the design, and to correct the film type (material) or film thickness of the halftone film on the f mask to produce the mask. . In the mask manufacturing, the film thickness control of the halftone film is performed. In the case where the TFT channel portion is formed by the gray scale portion of the gray scale mask, if it is a halftone film, the pattern can be easily applied by the photolithography step, so that even if the shape of the TFT channel portion is The complex pattern shape 'can still form the advantage. In the method of correcting a defect of a gray scale mask, a method of correcting a defect having a light-shielding portion, a light-transmitting portion, and a gray-scale portion is disclosed in Japanese Laid-Open Patent Publication No. 2004-3095-15. In the cover, when the defect of the gray scale portion is corrected, the film of the gray scale portion becomes a film thickness at which a normal gray scale effect can be obtained, by using the money of FIB (F〇CUSed I0n Beam Dep〇siti〇n) To reduce film thickness or film formation. SUMMARY OF THE INVENTION In the gray scale mask of the patent document Is, defects occurring in the gray scale portion composed of the semi-transmissive film cannot be avoided. On the other hand, according to the defect correction method of Patent Document 2, in the gray scale mask having the fine pattern of the gray φ step portion, the defect generated in the fine pattern portion can be easily corrected with high correction. In other words, the defect correction method of Patent Document 2 solves the problem that when the normal pattern is a fine pattern, it is difficult to restore the fine pattern to the same shape when a defect occurs, and the laser CVD apparatus is used. In the method of forming a light-shielding film on a white defect portion or forming a light-shielding film after removing a black defect portion, it is difficult to control the light transmittance to obtain a suitable gray-scale effect. Further, here, the defect of the film pattern or the light-shielding film component 1378318 is corrected, and the defect whose transmittance is lower than a predetermined value is a black defect Pta, which is called a deficiency of the film pattern. A defect that makes the light transmittance higher than a predetermined one is a white defect. On the other hand, in the gray scale mask of the type in which the semi-transmissive portion uses a semi-transmissive film to control the amount of light transmitted by the exposure light, in the case where white defects are caused by the lack of the semi-transmissive film, it is desirable. As long as the correction film having the same size and the same shape as the defective portion is formed with high positional accuracy, it can be corrected. In the case of a black defect, after removing the film of the black defect portion, it is also possible to form a correction film having the same size and the same shape as the removed portion. However, it is difficult to carry out such an L positive in the actual case. For example, when the film portion formed for the defect correction overlaps with the peripheral portion of the defect, the amount of light transmitted in this portion becomes lower than the required value, and is formed. New black defects are a concern. Alternatively, if a gap is formed between the film portion formed for the defect correction and the peripheral portion of the defect, the light transmittance of the P blade becomes equal to that of the light transmitting portion to form a white defect. The above problem will be explained with reference to FIGS. 4A, 4B, 5A to 5C, and 6:8 to 6 (:, and 7A to 7C. These figures show that the semi-transmissive portion is used as a halftone film (half An example of a gray scale mask of a light transmissive film, that is, the gray scale mask 6 has a light shielding portion 61, a light transmitting portion 62, and a semi-light transmitting portion 63 formed in a predetermined pattern shape, for example, as in 5A, 5B. As shown in the figure, the light-shielding portion η is configured to have a light-shielding film 65' on the transparent substrate 64. The light-transmitting portion 62 is formed by a portion exposed by the transparent substrate 64. Further, the semi-transmissive portion 63 is formed on the transparent substrate 64. There is a semi-transmissive film 66. Further, Fig. 5B is a cross-sectional view taken along line L_L of the 5AB|, and Fig. 5C is a view showing light transmittance (T) of the cross section shown in Fig. 5B. Figs. 6A to 6C and 7A The ~7C picture is also the same. 1378318 The revised version is shown in Figure 4A.
在半透光部63因半透光膜之欠缺而 產生白缺陷70的情況，如第4B圖所示，若可位置精度高 地形成與冑欠缺之該白缺陷部分相0尺寸及_形^之 修正膜67的話’即可進行理想的修正 '然而，在實際情 況中，卻很難進行此種理想的修正。例如，如第5AT5B 圖所示’因修正膜67之成膜區域71相對於白缺陷區域7〇 產生偏移’所以’產生修正膜67與缺陷周邊部分相重疊 的區域70b ’並在修正膜67與缺陷周邊部分之間產生間隙 區域70a。在此情況時，如第5C圖所示，在前者之重疊區 域70b的透光量，變得比所需值更低（接近於遮光部之透 光量），而有可能成為新的黑缺陷。另一方面，後者之門 隙區域70a之透光率變得與透光部之透光率相等，而形成In the case where the semi-transmissive portion 63 is caused by the lack of the semi-transmissive film, the white defect 70 is generated. As shown in FIG. 4B, if the positional accuracy is high, the white defect portion and the defect are formed. If the film 67 is corrected, an ideal correction can be performed. However, in practice, it is difficult to perform such an ideal correction. For example, as shown in the fifth AT5B diagram, 'the film formation region 71 of the correction film 67 is offset with respect to the white defect region 7', so that the correction film 67 is overlapped with the peripheral portion of the defect 70b' and is in the correction film 67. A gap region 70a is created between the peripheral portion of the defect. In this case, as shown in Fig. 5C, the amount of light transmitted in the overlapping region 70b of the former becomes lower than the required value (close to the amount of light transmitted from the light shielding portion), and may become a new black defect. . On the other hand, the light transmittance of the latter gate region 70a becomes equal to the light transmittance of the light transmitting portion, and is formed.
另外，如第6A〜6C圖所示， 7 2比白缺陷區域7 〇更大，所以， 周邊部分相重疊的區域70b的情 上述，有可能使得透光率變低而 又，如第7A〜7C圖所示 比白缺陷區域7 0更小，所以 分之間產生間隙區域7 0 a的情 70a形成白缺陷。 因修正膜67之成膜區域 在產生修正膜67與缺陷 況’在重疊區域7〇b，如 形成黑缺陷。 ，因修正膜67之成膜區域73 ’在修正膜67與缺陷周邊部 况，如上述，會在間隙區域 本發明係馨於上述習知問題點而提出之發明，立第i 目的在於，提供-種可適宜於修正產生於半透光部之缺 陷的灰階遮罩的缺陷修正方法。 本發明之第2目的在於，提供一種具有應用此種缺陷 -10- 1378318 修正本 修正方法之缺陷修正步驟的灰階遮罩的製造方 本發明之第3目的在於，提供一種能將產生 部之缺陷適宜地加以修正的灰階遮罩。 . 本發明之第4目的在於，提供一種使用上述 . 之圖案轉印方法。 為了解決上述課題，本發明具有以下之任 (構成1) 一種灰階遮罩的缺陷修正方法，該灰階遮 % 遮蔽曝光光線之遮光部、使曝光光線透過之透 將曝光光線之透光量減低預定量之半透光部， 被轉印體上形成使膜厚階段性或連續性不同之 ’該灰階遮罩的缺陷修正方法之特徵為：具備 光膜形成該半透光部’並在該半透光部上指定 的步驟；及在包含該缺陷區域之範圍形成修正 ，該修正膜係在比中心部靠近周緣側的部分， 光線的透光量比中心部大之區域。 Φ (構成2) 如構成1所記載之灰階遮罩的缺陷修正方9 修正膜係自其中心部朝向周緣部，曝光光線的 續性或階段性地增大。 (構成3) 如構成1所記載之灰階遮罩的缺陷修正方^ 修正膜係在比中心部靠近周緣側的部分，具有 心部薄之區域。 (構成4) 法。 於半透光 灰階遮罩 一構成。 罩係具有 光部、及 並用以在 光阻圖案 藉由半透 缺陷區域 膜的步驟 具有曝光 t，其_該 透光量連 •，其中該 膜厚比中 -11· 修正本 如構成3所記載之灰階遮罩的缺陷修正方法， 修正膜係自1中心邱翻6用络加 /、中該 、中p朝向周緣部，其膜厚連續性$ π 性地變薄。 貝改或階段 (構成5) :構广4中任一構成所記載之灰階遮罩的缺陷修 方法，λ中該缺陷區域係相對於正常置 =透光膜之膜厚小或半透光膜缺落之部位，2曝： 光線之透光量比正常半透光部大的區域。 ’"、光 (構成6) 如構成1〜4中任一構忐斯與 . 正方法，甘士 構成所圮载之灰階遮罩的缺陷修 ，、中該缺陷區域係相對Further, as shown in Figs. 6A to 6C, 7 2 is larger than the white defect region 7 ,, so that the region 70b in which the peripheral portions overlap is as described above, and it is possible to make the light transmittance low, as in the case of 7A~ The 7C figure is smaller than the white defect area 70, so that the situation 70a in which the gap area 70a is generated between the points forms a white defect. The film formation region of the correction film 67 is such that a correction film 67 is generated and the defect is in the overlap region 7〇b, such that a black defect is formed. Since the film forming region 73' of the correction film 67 is in the state of the correction film 67 and the peripheral portion of the defect, as described above, the present invention is proposed in the above-mentioned conventional problems in the gap region, and the object is to provide A defect correction method suitable for correcting a gray scale mask generated in a defect of a semi-transmissive portion. A second object of the present invention is to provide a gray scale mask having a defect correction step of applying the above-mentioned defect -10- 1378318, and a third aspect of the present invention to provide a generating portion A grayscale mask whose defect is suitably corrected. A fourth object of the present invention is to provide a pattern transfer method using the above. In order to solve the above problems, the present invention has the following (Configuration 1) A method for correcting a defect of a gray scale mask, which blocks a light-shielding portion of an exposure light, and transmits a light-transmitting amount of the exposure light through the exposure light. The semi-transmissive portion is reduced by a predetermined amount, and a defect correction method for forming the gray-scale mask having a different film thickness step or continuity is characterized in that a light film is formed to form the semi-transmissive portion a step of designating the semi-transmissive portion; and correcting a range including the defect region, the correction film being in a region closer to the peripheral side than the center portion, and a light-transmitting amount larger than a central portion. Φ (Structure 2) The defect correcting side 9 of the gray scale mask described in the first embodiment is such that the correction film is continuously or stepwisely increased from the center portion toward the peripheral portion. (Structure 3) The defect correction method of the gray scale mask described in the first embodiment is a region having a thin core portion in a portion closer to the peripheral side than the center portion. (Form 4) Method. In a semi-transparent gray-scale mask, a composition. The cover has a light portion and is used to have an exposure t in the step of the photoresist pattern by the semi-transparent defect region film, wherein the light transmission amount is connected, wherein the film thickness ratio is -11. In the method of correcting the defect of the gray scale mask described above, the correction film system is thinned by a π-thickness from the center of the center to the peripheral portion. Bayer modification or stage (Configuration 5): a defect repairing method of the gray scale mask described in any of the configurations of the structure 4, wherein the defect area is small or semi-transparent with respect to the film thickness of the normal light-transmissive film The part where the film is missing, 2 exposure: the area where the light transmission amount is larger than the normal semi-transmission portion. '", light (constituent 6), if any of the constituents 1 to 4 is constructed and the positive method, the cane constitutes the defect repair of the gray-scale mask contained in the load, and the defect area is relatively
坐，秦业μ 予之+透光部，A :透光膜之膜厚大或附著有半 ： 曝光光線之透光量比正常半透光部小的區域而為 (構成7) 如構成1〜6中任一構成所記載之 正方法，纟中該修正 €皁的缺陷修 w止 形成步驟係具有二次以上之Λ 膜步驟，在各成膜步驟形 之成 提供半透光部之所需灰階 膜，八具有比 透光I 果的^光線之透光量大的 (構成8) 如構成7所§己载之灰階掉 ^ x ^ 次階遮罩的缺陷修正方法，苴中哕 修正膜之二次以上的成膜 八中該 ^ , ,, ^ ^ ^ ' ，係包含在該缺陷區域内 而比缺陷區域小之區域， •域内 陷區域且比缺陷區域大 、之步驟’及在包含缺 (構成9) A…’進行成膜之步驟。 -12- 1378318 修正本 如構成1〜8中任一構成所記載之灰階遮罩的缺 正方法，其中該修正膜之形成步驟係應用聚焦離子 陷修 束法 (構成10) 如構成9所記載之灰階遮罩的缺陷修正方法，其 使離子束散焦之狀態下進行照射β (構成11) 一種灰階遮罩的製造方法，其特徵為包含有： 構成1〜10中任一構成所記載之灰階遮罩的缺陷修 法之缺陷修正步驟。 (構成12) 一種灰階遮罩’係具有遮蔽曝光光線之遮光部 曝光光線透過之透光部、及將曝光光線之透光量減 定量之半透光部，並用以在被轉印體上形成使膜厚 性或連續性不同之光阻圖案，其特徵為：該半透光 藉由半透光膜所形成，且在該半透光膜之預定部分 在比中〜部罪近周緣侧的部分，形成具有曝光光線 光量比中心部大之區域的修正膜。 (構成13) 如構成12所記載之灰階遮罩，其中該修正膜係 中〜°卩朝向周緣部，曝光光線的透光量連續性或階 地增大。 (構成14) 如構成12所記栽之灰階遮罩，其中該修正膜係在 心部靠近周緣側的部分，具有膜厚比中心部薄之區, 中在 根據 正方 、使 低預 階段 部係 ，並 的透 自其 段性 比中 -13- 1378318 修正本 (構成15) 如構成14所記載之灰階遮罩，其中該修正膜係自其 中心部朝向周緣部，其膜厚連續性或階段性地變薄。 .(構成16) . —種®案轉印方法，其特徵為：使用構成u所記載 之製造方法的灰階遮罩、或構成12〜15中任—構成所記 載之灰階遮罩，及曝光機，將形成於該灰階遮罩上之圖 案轉印於被轉印體上。 • 在本發明之灰階遮罩的缺陷修正方法中，具備藉由 半透光膜形成料透光部，並在該半透光部上指定缺陷 區域的步驟；及在包含該缺陷區域之範圍形成修正膜的 步驟，該修正膜係在比中心部靠近周緣側的部分，具有 曝光光線的透光量比中心部大之區域。 根據本發明之灰階遮罩的缺陷修正方法，即使在修 正膜與缺陷周邊部分相重疊之情況，仍可抑制該部分之 透光量的降低，並可抑制因在修正膜與缺陷周邊部分之 •間產生間隙而形成白缺陷的掛慮。其結果，修正缺陷後 之區域，可獲得與半透光部之正常灰階部分所允許的透 光率範圍大致相同的灰階效果，可报好地修正產生於半 透光部之缺陷。又，利用上述效果，可預先將修正膜設 計成比白缺陷部分大。此尤其是適合於對白缺陷之允許 度低的材料。 另外’根據本發明之灰階遮罩的缺陷修正方法，藉 由具有應用此種本發明之缺陷修正方法的缺陷修正步驟 ，可獲得能適宜於修正產生於半透光部之缺陷的灰階遮 -14 - 1378318 . 修正本 罩。 另夕卜 ’根據本發明之灰階遮罩，半透光部係藉由半 透」所形成，且在該半透光膜之預定部分，並在比中 °部罪近周緣側的部分’形成具有曝光光線的透光量比 中大之區域的修正膜。藉此，即使在修正膜與缺陷 周邊邛刀相重疊之情況，仍可抑制該重疊部分之透光量 的降低，並可抑制因在修正膜與缺陷周邊部分之間產生 間隙而形成白缺陷的掛慮。其結果，修正缺陷後之區域 ，可獲得與半透光部之正常灰階部分所允許的透光率範 圍大致相同的灰階效果，可獲得能很好地修正產生於半 透光部之缺陷的灰階遮罩。 【實施方式】 以下’參照圖式說明本發明之較佳實施形態。 (第1實施形態） 第8圖為說明使用本發明之灰階遮罩的圖案轉印方 法用的剖視圖。第9A至9E圖顯示本發明之灰階遮罩的缺 陷修正方法的第1實施形態，第9 A圖為缺陷修正前之俯視 圖，第9B圖為修正途中之俯視圖，第9c圖為缺陷修正後 之俯視圖’第9D圖為沿第9C圖中之線L-L所作的側剖視 圖，第9E圖為表示第9D圖之截面中的透光率（τ)的曲線圖 〇 第8圖所示本發明之灰階遮罩2〇(未顯示修正後之缺 陷區域），係用於例如、液晶顯示裝置（LCD)之薄膜電a 體（TFT)、彩色濾光片、或電漿顯示器面板（pdp)等之製 造者’用以在第8圖所示之被轉印體30上，形成使膜厚比 -15- 1378318 修正本 段性或連續性變化之光阻圖案33。又，第8圖中，符號 3 2A，32B顯示在被轉印體3〇上被積層於基板3丨上之膜。 具體而言，灰階遮罩20在構造上具有：遮光部21， 係在該灰階遮罩20之使用時用以遮蔽（透光率大致為〇%) •曝光光線；透光部22 ’係利用透明基板24之表面露出而 使曝光光線透過；及半透光部23,在設透光部之曝光光 線透過率為1 〇 〇 %時，將透光率減低至2 〇 %〜6 〇 %、較佳 則為40%〜60%左右。半透光部23係利用在玻璃基板等之 • 透明基板24上形成半透光性的半透光膜26所構成。另外 ’遮光部2 1係利用在透明基板24上設置遮光性之遮光膜 25所構成。又，第8圖及第9A〜9D圖所示之遮光部21、 透光部22、及半透光部23的圖案形狀，至多僅為一例示 而已，本發明之旨趣當然不受此等所限定。 半透光膜26可列舉絡化合物、MoSi、Si、W、Α1。 其中’鉻化合物具有氧化鉻（CrOx)、氮化鉻（CrNx)、氧 氮化鉻（CrOxN)、氟化鉻（CrFx)或該等中含有碳、氫者。 φ Mo化合物係除MoSix以外’還包含MoSi之氮化物、氧化 物、氧化氮化物、碳化物等。另外，遮光膜2 5係可列舉 Cr ' Si ' W ' A1等。遮光部21之透光率，係藉由遮光膜 25之膜材質及膜厚的選定所設定。另外，半透光部23之 透光率’係藉由半透光膜26之膜材質及膜厚的選定所設 定。 在使用如上述之灰階遮罩20時，實質上在遮光部21 無曝光光線透過’而曝光光線在半透光部23被減低。因 此’塗布於被轉印體30上之光阻膜（正型光阻膜），在轉 • 16 - 1378318 修正本 印後並經過顯像時’在對應於遮光部2丨之部八 【刀,.Η» rg 變厚，而在對應於半透光部23之部分，其膜厚變薄、 對應於透光部22之部分形成無膜之光阻圖案33(參照 .圖）。在此光阻圖案33中，稱在對應於半透光部幻之部八 其膜厚變薄的效果為灰階效果。又，在使用負型光1 情況’需要考慮將與遮光部及透光部對應之光阻膜厚顛 倒來進行設計，但在此種情況，亦可充分獲得本發明之 效果。 • 另外，在第8圖所示之光阻圖案33的無膜的部分，對 被轉印體30之例如膜32A及32B實施第！蝕刻，並在藉由 清洗等除去光阻圖案3 3的薄膜部分之部分，對被轉印體 30之例如膜32B實施第2蝕刻。如此，藉由使用—片之灰 階遮罩2 0 ’貫施習知之2片光罩量的步驟，以削減光罩數 〇 其次，說明第1實施形態之缺陷修正方法。在第【實 施形態中’在透明基板上分別形成含鉬石夕化物之半透光 _ 膜（曝光光線透光率50 %)、以鉻為主成分之遮光膜，並實 施預定之圖案加工，藉以使用具備遮光部、透光部及半 透光部之τΡτ基板製造用的灰階遮罩。有關製造方法， 容待後述。 參照第9 Α至9Ε圖，說明第1實施形態之產生於該半 透光部之白缺陷的修正方法。 '(1)有關製造之灰階遮罩，係使用缺陷檢查裝置，進 行遮罩圖案之缺陷檢查。另外，在半透光部存在缺陷時 ’指定該缺陷區域之位置資訊及形狀資訊。此情況之缺 -17- 丄： 修正本 ，係相對於正常之半透光部， 七1右主泳，、平透光膜之膜厚薄、 或具有半透光膜欠缺之部位， ^ ., T ^ ^ k 4 V’其是曝光光線之透 光里比正常之半透光部大的 ^ ^ ^ 刀的所謂白缺陷》 缺檢查之結果，如第9a圖所_ ^ 8 m ^ Μ ^ , 口所不，在由半透光膜26( 第8圖）所構成之半透光部幻上 方*认ώτβ 在有白缺陷區域50。又 ，產生於遮罩之實際缺陷，多 .^ _ η0 虿不規則之形狀，在此， 為便於說月，僅顯示大致橢圓形者。 (2)再者，作為修正之第 > F Μ & — # 階奴，在比該缺陷區域小 之&域進仃修正膜的成膜。 ^ ^ ^ 首先，決定形成修正 膜用之成膜手段及成膜材料。在 ^ ^ ^ Α 在第1實施形態中，應用fib 裝置作為成膜手段。另外， 成膜材料雖可使用與半透光 ::同：含㈣化物之材料，但以使用適合於FIB裝置之 营姑：t ί進仃透光量之控制的原材料為較佳。在第1 / : 成膜材料係碳。碳係不僅適合於FIB裝置之 成膜及谷易進行透光晋夕如^连丨 — 丁笾尤重之控制，而且係在耐藥品性、黏 者強度上亦優良的原材料。Sit, Qinye μ to the + light-transmitting part, A: The film thickness of the light-transmissive film is large or half is attached: the light-transmitting amount of the exposure light is smaller than the area of the normal semi-transmissive portion (constitution 7) The positive method described in any one of the above-mentioned structures, wherein the defect forming step of the modified soap has a second or more film forming step, and the film forming step is formed to provide a semi-transmissive portion. A gray-scale film is required, and the light transmittance of the light having a larger light transmittance than that of the light-transmitting I (constituent 8) is a defect correction method of the gray-scaled ^^^ second-order mask which constitutes the § The film of the second or more film of the correction film is ^, ,, ^ ^ ^ ', which is included in the defect region and is smaller than the defect region, and the step of the domain intrusion region is larger than the defect region. And in the process of forming a film by including a defect (constitution 9) A...'. -12- 1378318 A method for correcting a gray scale mask according to any one of the configurations 1 to 8, wherein the step of forming the correction film is to apply a focused ion trap beam method (constitution 10). A method for correcting a defect of a gray scale mask according to the invention, wherein the ion beam is defocused and irradiated with a β (constitution 11). A method for manufacturing a gray scale mask, comprising: constituting any one of the configurations 1 to 10 The defect correction step of the defect modification method of the described gray scale mask. (Structure 12) A gray-scale mask is a light-transmitting portion through which a light-shielding portion that shields exposure light passes, and a semi-transmissive portion that reduces a light-transmitting amount of exposure light, and is used for the transfer-receiving body Forming a photoresist pattern having different film thickness or continuity, wherein the semi-transparent film is formed by a semi-transparent film, and a predetermined portion of the semi-transmissive film is near the peripheral side of the middle portion The portion is formed with a correction film having a region where the amount of light of the exposure light is larger than the center portion. (Structure 13) The gray-scale mask according to the configuration 12, wherein the correction film has a distance of ~°卩 toward the peripheral edge portion, and the amount of light transmitted by the exposure light is continuously increased or stepwise. (Structure 14) The gray-scale mask which is recorded in the configuration 12, wherein the correction film is in a portion where the core portion is close to the peripheral side, and has a thinner film than the central portion, and is in a low-pre-stage portion according to the square side. And the gradation ratio of the medium-level 13-1378318 (Construction 15). The gray-scale mask as described in the composition 14, wherein the correction film is continuous from the central portion toward the peripheral portion thereof, or has a film thickness continuity or It is thinned step by step. (Structure 16). A method of transferring a type of product, characterized in that a gray scale mask comprising the manufacturing method described in u or a gray scale mask of any one of 12 to 15 is formed, and The exposure machine transfers the pattern formed on the gray scale mask onto the object to be transferred. In the defect correction method of the gray scale mask of the present invention, there is provided a step of forming a light transmitting portion by the semi-transmissive film and designating a defective region on the semi-transmissive portion; and a range including the defective region In the step of forming a correction film, the correction film is in a portion closer to the peripheral side than the center portion, and has a region in which the amount of light transmitted by the exposure light is larger than the center portion. According to the defect correction method of the gray scale mask of the present invention, even when the correction film overlaps with the peripheral portion of the defect, the decrease in the amount of light transmission of the portion can be suppressed, and the correction film and the peripheral portion of the defect can be suppressed. • A gap is created to create a white defect. As a result, the area after the defect is corrected, and the gray scale effect which is substantially the same as the allowable range of the light transmittance of the normal gray scale portion of the semi-transmissive portion can be obtained, and the defect generated in the semi-transmissive portion can be corrected. Further, with the above effects, the correction film can be designed to be larger than the white defect portion in advance. This is especially suitable for materials with low tolerance to white defects. Further, according to the defect correction method of the gray scale mask according to the present invention, by having the defect correction step to which the defect correction method of the present invention is applied, gray scale mask which can be adapted to correct the defect generated in the semi-transmissive portion can be obtained. -14 - 1378318 . Correct the cover. In addition, according to the gray scale mask of the present invention, the semi-transmissive portion is formed by semi-transparent, and is in a predetermined portion of the semi-transmissive film, and is in a portion closer to the peripheral side than the middle portion. A correction film having a region in which the amount of light transmitted by the exposure light is larger than the medium is formed. Thereby, even in the case where the correction film overlaps with the defect peripheral trowel, the decrease in the amount of light transmitted by the overlapping portion can be suppressed, and the occurrence of white defects due to the occurrence of a gap between the correction film and the peripheral portion of the defect can be suppressed. Care. As a result, the area after the defect is corrected, and the gray scale effect which is substantially the same as the allowable light transmittance range of the normal gray-scale portion of the semi-transmissive portion can be obtained, and the defect which is generated in the semi-transmissive portion can be corrected well. Grayscale matte. [Embodiment] Hereinafter, preferred embodiments of the present invention will be described with reference to the drawings. (First Embodiment) Fig. 8 is a cross-sectional view for explaining a pattern transfer method using a gray scale mask of the present invention. 9A to 9E are views showing a first embodiment of the defect correction method for the gray scale mask of the present invention, wherein FIG. 9A is a plan view before the defect correction, FIG. 9B is a plan view during the correction, and FIG. 9c is a defect correction. FIG. 9D is a side cross-sectional view taken along line LL in FIG. 9C, and FIG. 9E is a graph showing light transmittance (τ) in a cross section of FIG. 9D. FIG. 8 shows the present invention. Grayscale mask 2〇 (not shown in the modified defect area) is used for, for example, a thin film dielectric (TFT), a color filter, or a plasma display panel (pdp) of a liquid crystal display device (LCD). The manufacturer's is used to form a photoresist pattern 33 having a film thickness ratio of -15 to 1378318 corrected for the segment or continuity on the transfer target body 30 shown in Fig. 8. Further, in Fig. 8, reference numerals 3 2A and 32B show a film which is laminated on the substrate 3 on the transfer target 3A. Specifically, the gray scale mask 20 has a structure: a light shielding portion 21 for shielding when the gray scale mask 20 is used (a light transmittance is approximately 〇%) • exposure light; the light transmitting portion 22 ' The surface of the transparent substrate 24 is exposed to expose the exposure light, and the semi-transmissive portion 23 reduces the light transmittance to 2 〇% to 6 when the transmittance of the light transmitting portion is 1%%. %, preferably 40% to 60% or so. The semi-transmissive portion 23 is formed by forming a semi-transmissive semi-transmissive film 26 on a transparent substrate 24 such as a glass substrate. Further, the light-shielding portion 21 is formed by providing a light-shielding light-shielding film 25 on the transparent substrate 24. Further, the pattern shapes of the light shielding portion 21, the light transmitting portion 22, and the semi-transmissive portion 23 shown in Figs. 8 and 9A to 9D are at most only an example, and the object of the present invention is of course not limited thereto. limited. The semi-transmissive film 26 is exemplified by a complex compound, MoSi, Si, W, and Α1. Among them, the chromium compound has chromium oxide (CrOx), chromium nitride (CrNx), chromium oxynitride (CrOxN), chromium fluoride (CrFx) or carbon or hydrogen. The φ Mo compound contains a nitride, an oxide, an oxynitride, a carbide, or the like of MoSi in addition to MoSix. Further, examples of the light shielding film 25 are Cr 'Si 'W ' A1 and the like. The light transmittance of the light shielding portion 21 is set by the film material and film thickness of the light shielding film 25. Further, the light transmittance ' of the semi-transmissive portion 23 is set by the film material and film thickness of the semi-transmissive film 26. When the gray scale mask 20 as described above is used, substantially no light is transmitted through the light-shielding portion 21, and the exposure light is reduced in the semi-light-transmitting portion 23. Therefore, the photoresist film (positive photoresist film) applied to the transfer-receiving body 30, after the correction of the printing and the development of the image after the printing of the 16- 1378318, is in the section corresponding to the light-shielding portion 2 Rb becomes thicker, and in the portion corresponding to the semi-transmissive portion 23, the film thickness is thinned, and a portion corresponding to the light transmitting portion 22 forms a film-free photoresist pattern 33 (see Fig.). In this resist pattern 33, the effect of thinning the film thickness corresponding to the portion of the semi-transmissive portion is a gray scale effect. Further, in the case where the negative-type light 1 is used, it is necessary to design the thickness of the photoresist film corresponding to the light-shielding portion and the light-transmitting portion to be reversed. However, in this case, the effects of the present invention can be sufficiently obtained. Further, in the film-free portion of the resist pattern 33 shown in Fig. 8, for example, the films 32A and 32B of the transfer target 30 are subjected to the first! The second etching is performed on, for example, the film 32B of the transfer target body 30 by etching and removing portions of the film portion of the resist pattern 33 by cleaning or the like. In this manner, the number of masks is conventionally reduced by using a gray scale mask of 20 Å to reduce the number of masks. Next, the defect correction method of the first embodiment will be described. In the first embodiment, a semi-transmissive film containing a molybdenum cerium (a light transmittance of 50%) and a light-shielding film containing chromium as a main component are formed on the transparent substrate, and predetermined pattern processing is performed. A grayscale mask for manufacturing a τΡτ substrate including a light shielding portion, a light transmitting portion, and a semi-light transmitting portion is used. The manufacturing method will be described later. A method of correcting white defects generated in the semi-transmissive portion according to the first embodiment will be described with reference to Figs. 9 to 9 . '(1) Regarding the manufacturing of the gray scale mask, the defect inspection device is used to perform the defect inspection of the mask pattern. Further, when there is a defect in the semi-transmissive portion, the position information and the shape information of the defective region are designated. The lack of this situation -17- 丄: The revised version is relative to the normal semi-transparent part, the 7 1 right main swimming, the thin film thickness of the flat transparent film, or the part with the semi-transparent film missing, ^ ., T ^ ^ k 4 V' is the result of the lack of inspection of the so-called white defect of the ^ ^ ^ knife which is larger than the normal semi-transmissive portion in the light transmission of the exposure light, as shown in Fig. 9a _ ^ 8 m ^ Μ ^ The mouth is not, and the opaque portion of the semi-transmissive portion composed of the semi-transmissive film 26 (Fig. 8) has a white defect region 50. Moreover, the actual defect caused by the mask is more than .^ _ η0 虿 an irregular shape. Here, for the convenience of the month, only the substantially elliptical shape is displayed. (2) In addition, as the correction of the > F Μ & - # step slave, the film is formed in the smaller & ^ ^ ^ First, it is decided to form a film forming means and a film forming material for the correction film. In ^^^ Α In the first embodiment, a fib device is applied as a film forming means. Further, although the film-forming material can be used as a material which is semi-transparent::: (4), it is preferable to use a material suitable for the control of the FIB device. In the 1st / : film-forming material is carbon. The carbon system is not only suitable for the film formation of the FIB device, but also for the easy-to-transform Jinxi ^ 丨 丨 笾 笾 笾 丨 丨 笾 笾 笾 笾 笾 笾 笾 笾 笾 笾 笾 笾 笾 笾 笾 笾 笾 笾 笾 笾 笾 笾 笾 笾 笾
在匕針對FIB裝置進行說明。如第10圖所示，FIB 、置40係構成為具備：產生㈤離子之離子源化電磁 :學系42 ^出用α中和以+離子之電子的電子搶43 ; 地出β孔體之蝕刻用氣搶49;及用以射出嵌二萘氣體之氣 4電磁光學系42係將自離子源41產生之Ga+離子構 成離子束47，此離子束47係藉由掃描放大器進行掃描 〇 在χγ作業台45上載置作為被修正對象物的灰階遮 罩20藉由使ΧΥ作業台45移動，將此灰階遮罩20上之施 -18- 1378318 修正本 以修正的缺陷區域移動至離子束照射區域。接著，由離 子束47對施以修正的缺陷區域進行掃描，卩用檢測此時 所產生之二次離子的二次離子檢測器48的作用，檢測施 以修正之缺陷區域的位置。離子束47係透過電磁光學系 42對灰階遮罩2〇之施以修正的缺陷區域進㈣射藉以 實施修正膜之形成、黑缺陷區域之半透光膜的除去。又 ，離子束之光束直徑係φ 〇·1μιη以下。 在形成修正膜之情況，—面透過電磁光學系42射出 離子束47, 一面藉由氣搶44射出嵌二萘氣體。藉此，嵌 二萘氣體與離子束47接觸並進行聚合（化學反應），於離 子束4 7之照射區域堆積修正膜而進行成膜。 另外，在除去黑缺陷區域之半透光膜的情況，藉由 蝕刻用氣搶49射出ρ氣體，並在此狀態之下，透過電磁光 學系42照射離子束47，藉以除去該半透光膜。 第1階段之修正係用以進行修正膜的成膜者，該修正 膜係具有比半透光膜26之透光率（50%)高之透光率，在此 決疋使用FIB裝置的成膜條件，其用以形成例如具有 70%之透光率的修正膜。在使用FIB裝置之成膜的情況， 控制膜之透光率的參數，主要係離子束之每單位面積的 放射量（dose、與成膜時之電流值成比例）。另外，第1階 段之修正膜的成膜區域，係在白缺陷區域50内，設定為 比該白缺陷區域5〇小之區域52(第9B圖）。缺陷區域與成 膜區域之尺寸差（尺寸邊界）’係考量到成膜裝置（FIB裝 置）之定位精度等’在此，例如以可產生丨μπι之間隙的方 式來設定成膜區域。作為修正膜之成膜區域52，係將必 -19- 1378318 修正本 要之位置資訊等輸入FiB裝置， ,叮榭入上述之成膜條件 而於成膜區域52形成修正膜28(參照第把圖）。 (3)另外，修正之第2階段係用以在比白缺陷區域 :的行修正膜的成膜。第2階段之修正膜的成膜區 域，係包含白缺陷區域50,且設定為比該白缺陷區域5〇 大之區域53(第9C圖）。缺陷區域與成膜區域之尺寸差（尺 寸邊界）’料量到成膜裝置（FIB裝置）之定位精度等， 在此例如以可成為ίμιη之尺寸邊界的方式來設The description will be given for the FIB device. As shown in Fig. 10, the FIB and the 40-series are configured to have an ion-sourced electromagnetic that generates (five) ions: the electrons of the electrons are neutralized by α-neutralization with an ion of + ions; The etch gas 49; and the gas for injecting the helium naphthalene gas 4 electromagnetic optical system 42 to form the ion beam 47 from the Ga + ion generated from the ion source 41, the ion beam 47 is scanned by the scan amplifier χ χ γ The gray scale mask 20 as the object to be corrected is placed on the work table 45, and by moving the boring table 45, the erroneous defect area on the gray scale mask 20 is moved to the ion beam. Irradiation area. Next, the corrected defect region is scanned by the ion beam 47, and the position of the corrected defect region is detected by the action of the secondary ion detector 48 which detects the secondary ions generated at this time. The ion beam 47 is transmitted through the electromagnetic field system 42 to correct the defective region of the gray scale mask 2 to perform the formation of the correction film and the removal of the semi-transmissive film in the black defect region. Further, the beam diameter of the ion beam is φ 〇·1 μmη or less. In the case where the correction film is formed, the surface is transmitted through the electromagnetic optical system 42 to emit the ion beam 47, and the gas is trapped by the gas blast 44 to emit the pentaphthalene gas. Thereby, the pentaphthalene gas is brought into contact with the ion beam 47 to carry out polymerization (chemical reaction), and a correction film is deposited on the irradiation region of the ion beam 47 to form a film. Further, in the case where the semi-transmissive film of the black defect region is removed, the ρ gas is emitted by the etching gas, and in this state, the ion beam 47 is irradiated through the electromagnetic optical system 42, thereby removing the semi-transparent film. . The correction of the first stage is for the film formation of the correction film which has a light transmittance higher than the light transmittance (50%) of the semi-transmissive film 26, and it is decided to use the FIB device. A film condition for forming a correction film having, for example, a light transmittance of 70%. In the case of film formation using a FIB device, the parameter for controlling the light transmittance of the film is mainly the amount of radiation per unit area of the ion beam (dose, which is proportional to the current value at the time of film formation). Further, the film formation region of the correction film of the first stage is set in the white defect region 50 to be smaller than the white defect region 5 (region 9B). The difference in size (size boundary) between the defect region and the film formation region is considered to be the positioning accuracy of the film formation apparatus (FIB device). Here, for example, the film formation region is set in such a manner that a gap of 丨μπι can be generated. As the film formation region 52 of the correction film, the position information and the like of the correction film are input to the FiB device, and the film formation conditions are formed, and the correction film 28 is formed in the film formation region 52 (refer to the first film). Figure). (3) In addition, the second stage of the correction is to form a film for correcting the film in the row of the white defect region. The film formation region of the second-stage correction film includes a white defect region 50 and is set to a region 53 larger than the white defect region 5 (Fig. 9C). The difference in size between the defect area and the film formation area (size boundary) is the amount of the material to the film forming apparatus (FIB device), and the like, for example, is set to be a size boundary of ίμιη.
區域。 义耿肤 作為修正膜之成膜區域53,係將必要之位置資訊等 輸入FIB裝置’其他之成膜條件、成膜材料則與第i階段 相同，於成膜區域53形成修正膜29(參照第％、第9D圖） 以上之缺陷修正之結果，如第9E圖所示，在白缺陷 區域50之中心附近，藉由第i階段之修正膜28與第2階段 之修正膜29之積層，形成曝光光線之透光率大致成^ 鲁50%(由第9E圖的A所示），具有與正常之半透光告⑺相同 的灰階效果。另外，在白缺陷區域5〇之周邊部分僅形成 曝光光線透光率比中心部（修正膜28與29之積層部分）大 的修正膜29，而在未滿2μιη之邊界範圍形成透光率比半 透光部23略高之部分及略低之部分（由第9Ε圖中之β c所 示），但在使用遮罩時之曝光條件下，因不析像且透光率 亦在允許範圍内’所以’可無任何問題地使用。 如第9D圖所示，修正膜具有自其中心部朝向周緣部 ’呈階段狀地減少膜厚之部分，其結果，如第9 £圖所示 -20- 1378318 修正本 ’修正膜具有自其中心部朝向届结加 句初Π周緣部，階段狀地增大 光光線的透光率的部分。當然，修正膜亦可具有自其_ 心部朝向周緣部，連續性地減少膜厚之部分，其結果， .修正膜具有自其中心部朝向周緣部，連續性地增:曝光 光線的透光率的部分。 以上，雖說明了白缺陷之修正方法但在半透光部 上因遮光膜成分之附|#而存在有黑缺陷的情〉兄，當使 用FIB裝置等欲僅除去黑缺陷時，因對半透光膜亦產生破 •壞，所以’要對半透光膜不產生影響卻又能除去黑缺陷 ，會有困難。因此，利用fib裝置、雷射裝置等除去含黑 缺陷之區域的半透光膜，並將此除去之區域作為缺陷區 域，藉由實施與上述白缺陷之情況相同的修正，在黑缺 陷的情況亦適宜進行修正。 如上述，根據第丨實施形態，藉由形成於包含缺陷區 域之修正膜，在比中心部靠近周緣侧的部分，具有曝光 光線的透光量比中心部大之區域，可減小修正膜與缺陷 •周邊部分相重疊之部分的透光量的降低。另外，因在修 正膜與缺陷周邊部分之間不產生間隙，所以，修正缺陷 後之區域’可獲得與半透光部之正常灰階部分相同的灰 階效果’可很好地修正產生於半透光部之缺陷。 又’在第1實施形態中’雖在二次之修正膜的成膜步 驟中應用相同的成膜條件，但是只要能滿足二次成膜之 積層結果’可獲得例如5 0 %之曝光光光線透光率的條件 的話’亦可應用不同之成膜條件，另外，若滿足相同之 條件’亦可實施三次以上之成膜步驟。另外，亦可在比 -21- 1378318 修正本 缺陷區域小之區域内形成修正膜之步驟、及在比缺陷區 域大之區域形成修正膜之步驟的順序，與上述顛倒。即 可先在比缺陷區域大之區域形成修正膜，並在其上， •在比缺陷區域小之區域内形成修正膜。 另外’在第1實施形態中，可應用FIB裝置作為修正 膜之成膜手段，但成膜手段不限定於FIB裝置例如亦可 應用雷射CVD等其他之成膜手段。 又，在第1實施形態中’修正膜之中心部係設定為與 • 指定於無缺陷之半透光部的預定曝光光線透光率大致相 同之透光率’但若是對於白缺陷之允許度大的遮罩，亦 可設定為比該預定曝光光線透光率高之曝光光線透光率 。相反’若是對於黑缺陷之允許度大的遮罩，則可設定 為比该預定曝光光線透光率低之曝光光線透光率。這在 以後之實施形態中亦相同。 (第2實施形態） 第11A至11D圖顯示本發明之灰階遮罩的缺陷修正 鲁方法的第2貫施形態，第11A圖為缺陷修正前之俯視圖， 第11 B圖為缺陷修正後之俯視圖，第1 1 c圖為沿第1 1 b圖 中之線L-L所作的側剖視圖，第ud圖為表示第lie圖之 截面中的透光率（T)的曲線圖。 以下，針對第2實施形態之產生於半透光部之白缺陷 的修正方法進行說明。 (1)與第1實施形態相同，有關製造之灰階遮罩，係 使用缺陷檢查裝置，進行遮罩圖案之缺陷檢查，並在半 透光部存在缺陷時，指定該缺陷區域之位置資訊及形狀 -22- 1378318 修正本 資訊。缺陷檢查之結果，如第11AF1沉-^ ^ u 那弟11A圖所不，在由半透 26(第11C圖）所構成之半透光邱 、 卞延元邛23上存在有白缺陷區 50。 取 (2)其次，在比白缺陷區域5〇大之區域進行修正膜的 成膜。作I形成此修正膜用之成膜手段，係與第i實施形 態相同，應用FIB裝置，而成膜材料係碳。 " 在第2實施形態之修正中，在藉由FIB裝置進行修正 膜之成膜時，考慮成膜裝置之精度，使焦點偏移預定量（ 例如丨μπΟ，在比恰好對焦之位置散焦的狀態下照射離子 束。藉此，在比修正膜之中心部靠近周緣側的部分，成 膜量變小，而以曝光光線透光率成為比中心部增大此變 小部分之方式進行成膜，且在缺陷區域之中心部分，以 滿足與正常之半透光部相同程度的曝光光線透光率的方 式進行成膜。又，因散焦而散光之區域（寬度）係無法藉 由半透光部之透光率、因散焦產生的透光率分布、製程 界限等而一概而論，但以2μιη左右（可否顯像之境界程度） 為較佳。 另外’在第2實施形態中，修正膜之成膜區域，係包 含白缺陷區域50’且設定為比該白缺陷區域5〇大之區域 51(第11Β圖）》缺陷區域與成膜區域之尺寸差（尺寸邊界） ’係考量到成膜裝置（FIB裝置）之定位精度等，在此，例 如以可產生Ιμιη之尺寸邊界的方式來設定成膜區域。 作為修正膜之成膜區域5 1，係將必要之位置資訊等 輸入FIB裝置，同時輸入上述必要之成膜條件，而於成膜 區域51形成修正膜27(參照第11B，11C圖）。 -23- 1378318 修正本 以上之缺陷修正之結果，如第11D圖所 在白缺陷 fc-l 區域50之中心附近，使得曝光光 <元年大致成為 5〇〇/。（由第11D圖的A所示），且具有與正常之半透光才 同的灰階效果。另外，在白缺陷區域5Q之周邊部分= 曝光光線透光率比中心部大的修正膜27， 吻在未滿2μιη 之散光範圍形成透光率比正常半彡光料高之部分及略 低之部分（由第11D圖中之B，c所示），但在使用遮罩時之region. As the film formation region 53 of the correction film, the position information and the like are input to the FIB device. Other film formation conditions and film formation materials are the same as the i-th phase, and the correction film 29 is formed in the film formation region 53 (refer to The results of the above-mentioned defect correction, as shown in Fig. 9E, in the vicinity of the center of the white defect region 50, by the layer of the correction film 28 of the i-th stage and the correction film 29 of the second stage, The light transmittance for forming the exposure light is approximately 50% (shown by A in Fig. 9E), and has the same gray scale effect as the normal half transmittance (7). Further, in the peripheral portion of the white defect region 5, only the correction film 29 having a light transmittance higher than that of the central portion (the laminated portion of the correction films 28 and 29) is formed, and a transmittance ratio is formed at a boundary range of less than 2 μm. The portion of the semi-transmissive portion 23 that is slightly higher and the portion that is slightly lower (indicated by β c in Fig. 9), but under the exposure conditions when the mask is used, the resolution is not allowed because of the resolution and the transmittance is also within the allowable range. The inside 'so' can be used without any problems. As shown in Fig. 9D, the correction film has a portion in which the film thickness is reduced stepwise from the central portion toward the peripheral portion. As a result, as shown in Fig. 9 Fig. -20-1378318, the modified film has its own correction film. The center portion is oriented toward the beginning of the sentence, and the portion of the light transmittance of the light ray is increased stepwise. Needless to say, the correction film may have a portion in which the film thickness is continuously reduced from the center portion toward the peripheral portion, and as a result, the correction film is continuously increased from the center portion toward the peripheral portion thereof: light transmission of the exposure light The rate of the part. As described above, although the method of correcting the white defect has been described, the black light defect is present in the semi-transmissive portion due to the light-shielding film component |#, and when only the black defect is to be removed by using a FIB device or the like, The light-transmissive film also breaks and breaks, so it is difficult to remove the black defect without affecting the semi-transparent film. Therefore, the semi-transmissive film in the region containing the black defect is removed by a fib device, a laser device, or the like, and the removed region is used as a defect region, and the same correction as in the case of the above-described white defect is performed, in the case of black defects. It is also suitable for amendments. As described above, according to the third embodiment, the correction film formed on the defect region has a region where the amount of light transmitted by the exposure light is larger than the center portion in the portion closer to the peripheral side than the center portion, and the correction film can be reduced. Defect • A decrease in the amount of light transmitted by the portion where the peripheral portions overlap. In addition, since no gap is formed between the correction film and the peripheral portion of the defect, the region after the defect is corrected can obtain the same gray-scale effect as the normal gray-scale portion of the semi-transmissive portion, which is well corrected in half. Defects in the light transmitting portion. In the first embodiment, the same film formation conditions are applied to the film formation step of the secondary correction film. However, as long as the laminate result of the secondary film formation can be satisfied, for example, 50% of the exposure light can be obtained. In the case of the light transmittance condition, different film formation conditions may be applied, and if the same conditions are satisfied, a film formation step of three or more times may be performed. Further, the step of forming the correction film in the region where the defect region is smaller than -21 - 1378318 and the step of forming the correction film in the region larger than the defect region may be reversed as described above. That is, the correction film can be formed first in a region larger than the defect region, and on the above, • a correction film is formed in a region smaller than the defect region. Further, in the first embodiment, the FIB device can be applied as a film forming means for the correction film. However, the film forming means is not limited to the FIB device, and other film forming means such as laser CVD can be applied. Further, in the first embodiment, the center portion of the correction film is set to have a light transmittance which is substantially the same as the transmittance of the predetermined exposure light specified in the semi-transmissive portion having no defect, but the tolerance for white defects. The large mask can also be set to a light transmittance of the exposure light that is higher than the transmittance of the predetermined exposure light. On the contrary, if it is a mask having a large degree of tolerance for black defects, it can be set to a light transmittance of the exposure light which is lower than the transmittance of the predetermined exposure light. This is also the same in the later embodiments. (Second Embodiment) Figs. 11A to 11D are views showing a second embodiment of the defect correction method of the gray scale mask of the present invention, wherein Fig. 11A is a plan view before defect correction, and Fig. 11B is a defect correction. In the plan view, the 1st 1cth is a side cross-sectional view taken along line LL in Fig. 1b, and the udth is a graph showing the light transmittance (T) in the cross section of the lie diagram. Hereinafter, a method of correcting white defects generated in the semi-transmissive portion of the second embodiment will be described. (1) In the same manner as in the first embodiment, the gray scale mask produced by the method uses a defect inspection device to perform a defect inspection of the mask pattern, and when there is a defect in the semi-transmissive portion, specifies the position information of the defect region and Shape -22- 1378318 Fix this information. As a result of the defect inspection, as in the 11th AF1 sinking-^^u, the younger face 11A, there is a white defect region 50 on the semi-transparent Qiu and the Yanyanyuan 23 formed by the semi-transparent 26 (Fig. 11C). (2) Next, the film formation of the correction film is performed in a region larger than the white defect region. The film formation means for forming the correction film was the same as the i-th embodiment, and the FIB device was used to form a film material. < In the correction of the second embodiment, when the film formation of the correction film is performed by the FIB device, the focus is shifted by a predetermined amount in consideration of the precision of the film formation device (for example, 丨μπΟ, defocusing at a position closer than the focus) In this state, the ion beam is irradiated, whereby the amount of film formation becomes smaller at a portion closer to the peripheral side than the center portion of the correction film, and film formation is performed such that the light transmittance of the exposure light becomes larger than the center portion. And forming a film in the center portion of the defect region so as to satisfy the same degree of exposure light transmittance as the normal semi-transmissive portion. Further, the region (width) of astigmatism due to defocus cannot be semi-transparent. The light transmittance of the light portion, the light transmittance distribution due to defocusing, the process limit, and the like are generalized, but it is preferably about 2 μmη (the degree of development can be achieved). In the second embodiment, the correction film is used. The film formation region is a region 51 including a white defect region 50' and is set to be larger than the white defect region 5 (Fig. 11). The size difference (size boundary) between the defect region and the film formation region is considered to be Membrane loading Here, the positioning accuracy of the FIB device is set, for example, the film formation region is set so that the size boundary of the film can be generated. As the film formation region 51 of the correction film, necessary position information and the like are input to the FIB device. At the same time, the above-mentioned necessary film forming conditions are input, and the correction film 27 is formed in the film formation region 51 (refer to Figs. 11B and 11C). -23- 1378318 Corrects the result of the above defect correction, such as the white defect fc- in the 11th figure. l Near the center of the area 50, the exposure light < the first year is approximately 5 〇〇 /. (shown by A in Figure 11D), and has the same gray-scale effect as the normal half-light transmission. In addition, The peripheral portion of the white defect region 5Q = the correction film 27 having a light transmittance higher than that of the center portion, and the portion of the light having a light transmittance higher than that of the normal half-bright material and a slightly lower portion in the astigmatism range of less than 2 μm B, c) in Figure 11D, but when using a mask
曝光條件下，因不析像且透光率亦在允許範圍内所以 ’可無任何問題地使用。 以上，雖說明了第2實施形態之白缺陷的修正方法， 但對於黑缺陷的情況，藉由除去該黑缺陷之半透光膜， 實施與上述白缺陷之情況相同的修正，在黑缺陷的情況 亦可進行較.好的修正。 如上述，在第2實施形態中，藉由形成於包含缺陷區 域之修正膜，在比中心部靠近周緣侧的部分，具有曝光 光線的透光量比中心部大之區域，亦可減小修正膜與缺 φ 陷周邊部分相重疊之部分的透光量的降低。另外，因在 修正膜與缺陷周邊部分之間不產生間隙，所以，修正缺 陷後之區域，可獲得與半透光部之正常灰階部分相同的 灰階效果，可报好地修正產生於半透光部之缺陷。 以下’參照第1 2 A至1 2F圖，說明使用於上述實施形 態之灰階遮罩的製造方法之一實施例。 使用之空白遮罩係於透明基板24上形成遮光膜25( 參照第12A圖）。遮光膜25之材質係使用Cr及其化合物之 複合物。 -24- 修正本 光阻：先’在此空白遮罩之遮光膜25上塗布光阻以形成 、至於描繪，雖通常多使用電子線或光（短波長光 )’但在本實施例中使用 祚盔μ ·+.上 珩元藉此，作為上述光阻係 正型光阻。另外’藉由對於光阻膜描繪預定之圖案( 類似形成對應於遮光部之総圖案的圖案），並於描繪後 進行顯像，以形成對應於遮光部之光阻圖案8參昭 12Β圖）。 … 其•人，將光阻圖案80作為蝕刻遮罩，對遮光膜以進 ㈣刻以形成遮光膜圖案。在本實施例中，因為於遮光 膜使用Ci·及其化合物之複合物，所以，作為㈣手段可 為乾式㈣或濕式㈣之任—鞋刻。在本實施例中利 用濕式姓刻。 在除去殘留之光阻圖案之後（參照第12C圖），於透明 基板24之上面形成半透光膜26(參照第12d圖）。半透光膜 26係對透明基板24之曝光光線之透光量具有5〇〜2〇%程 度的m在本實施例中’採用依濺鍍成膜之 Cr氧化物（透光率50%)作為半透光膜26。 其次，在半透光膜26上，與上述相同地形成光阻膜 ，並進行第2次之描繪。在第2次之描繪中，以形成對應 於半透光部之光阻圖案（在半透光部上形成光阻圖案）的 方式描繪預定之圖案。在描繪後進行顯像，藉以在對應 於半透光部之區域形成光阻圖案81(參照第12E圖）。 接著，將光阻圖案81作為姓刻遮罩，對露出之半透 光膜26進行#刻以形成構成半透光部之半光膜圖案。在 本實施例中’此情況時之姓刻手段，係利用可在半透光 -25- 1378318 修正本 膜2 6與遮光膜2 5之間獲得高钮刻選擇性的乾式姓刻。 然後’除去殘留之光阻圖案’製成灰階遮罩2〇(參照 第12F圖）。 又’本發明之灰階遮罩之製造方法，不限定於上述 實施例。在上述實施例中，雖使用在透明基板上形成遮 光膜之空白遮罩，在製造步驟的途中進行半透光膜之成 膜，但亦可使用例如在透明基板上依序形成半透光膜及 遮光膜之空白遮罩來進行製造。此情況時之遮光部係由 φ 半透光膜及遮光膜的積層膜所構成。 【圖式簡單說明】 第1A至1C圖為顯示使用灰階遮罩之tft基板的製造 步驟之概略剖視圖。 苐2A至2C圖為接續第1C圖而顯示使用灰階遮罩之 TFT基板的製造步驟之概略剖視圖。 第3圖為顯示習知之微細圖案型的灰階遮罩之一例 的俯視圖。 • 第4A，4B圖為說明理想之缺陷修正方法用的俯視圖。 第5 A至5C圖為說明習知之缺陷修正方法的問題點 用的圖。 ” 第6A至6C圖為說明習知之缺陷修正方法的問題點 第 用的圖 7A至7C圖為說明習知之缺 陷修正方法的問題點 法用 第8圖為說明使用本發明之灰階遮罩的圖案轉印方 的剖視圖。 -26- 1378318 修正本 法 圖Under the exposure conditions, it can be used without any problem because it is not resolved and the light transmittance is within the allowable range. Although the method of correcting the white defect in the second embodiment has been described above, in the case of the black defect, the same correction as in the case of the white defect is performed by removing the semi-transmissive film of the black defect, and the black defect is The situation can also be better corrected. As described above, in the second embodiment, the correction film formed in the defect region has a region where the amount of light transmitted by the exposure light is larger than the center portion in a portion closer to the peripheral side than the center portion, and the correction can be reduced. The decrease in the amount of light transmitted from the portion where the film overlaps with the peripheral portion of the defect. In addition, since no gap is formed between the correction film and the peripheral portion of the defect, the area after the defect is corrected, and the same gray-scale effect as that of the normal gray-scale portion of the semi-transmissive portion can be obtained, which can be reported to be corrected in half. Defects in the light transmitting portion. Hereinafter, an embodiment of a method of manufacturing a gray scale mask used in the above-described embodiment will be described with reference to Figs. 1 2 A to 1 2F. The blank mask used is formed on the transparent substrate 24 to form a light shielding film 25 (refer to Fig. 12A). The material of the light shielding film 25 is a composite of Cr and a compound thereof. -24- Correcting the photoresist: First, apply a photoresist on the light-shielding film 25 of the blank mask to form, as for drawing, although electron lines or light (short-wavelength light) are often used', but it is used in this embodiment. The 祚 μ μ · +. upper 珩 element is used as the above-mentioned photoresist type positive resist. In addition, by drawing a predetermined pattern for the photoresist film (similar to forming a pattern corresponding to the ruthenium pattern of the light-shielding portion), and performing development after the drawing to form a photoresist pattern 8 corresponding to the light-shielding portion, reference is made to FIG. . ... the person, the photoresist pattern 80 is used as an etch mask, and the light-shielding film is inscribed (4) to form a light-shielding film pattern. In the present embodiment, since the composite of Ci· and its compound is used for the light-shielding film, it may be dry (four) or wet (four) as the means of (4). In the present embodiment, a wet type of engraving is used. After the residual photoresist pattern is removed (see Fig. 12C), a semi-transmissive film 26 is formed on the transparent substrate 24 (see Fig. 12d). The semi-transmissive film 26 has a light transmission amount of the exposure light of the transparent substrate 24 of about 5 〇 to 2 〇%. In the present embodiment, 'the oxide film formed by sputtering is used (the light transmittance is 50%). As the semi-transmissive film 26. Next, a photoresist film was formed on the semi-transmissive film 26 in the same manner as described above, and the second drawing was performed. In the second drawing, a predetermined pattern is drawn in such a manner as to form a photoresist pattern corresponding to the semi-transmissive portion (a photoresist pattern is formed on the semi-transmissive portion). After the drawing, development is performed to form a photoresist pattern 81 in a region corresponding to the semi-transmissive portion (refer to Fig. 12E). Next, the photoresist pattern 81 is masked as a surname, and the exposed semi-transmissive film 26 is patterned to form a semi-light film pattern constituting the semi-transmissive portion. In the present embodiment, the surname means in this case is to use a dry type which can obtain a high button selectivity between the film 26 and the light-shielding film 25 in the semi-transmissive -25-1378318. Then, the residual photoresist pattern is removed to form a gray scale mask 2 (refer to Fig. 12F). Further, the method of manufacturing the gray scale mask of the present invention is not limited to the above embodiment. In the above embodiment, although a blank mask in which a light shielding film is formed on a transparent substrate is used, film formation of the semi-transmissive film is performed in the middle of the manufacturing step, but a semi-transparent film may be sequentially formed, for example, on the transparent substrate. And a blank mask of the light-shielding film for manufacturing. In this case, the light-shielding portion is composed of a laminated film of φ semi-transmissive film and light-shielding film. BRIEF DESCRIPTION OF THE DRAWINGS FIGS. 1A to 1C are schematic cross-sectional views showing a manufacturing step of a tft substrate using a gray scale mask.苐2A to 2C are schematic cross-sectional views showing the manufacturing steps of the TFT substrate using the gray scale mask, which is continued from Fig. 1C. Fig. 3 is a plan view showing an example of a conventional gray pattern mask of a fine pattern type. • Figures 4A and 4B are top views showing the ideal defect correction method. Figs. 5A to 5C are diagrams for explaining the problem points of the conventional defect correction method. 6A to 6C are diagrams for explaining the problem of the conventional defect correction method. Figs. 7A to 7C are diagrams for explaining the problem of the conventional defect correction method. Fig. 8 is a view for explaining the use of the gray scale mask of the present invention. Cutaway view of the pattern transfer side. -26- 1378318
方第中 第9A至9E圖顯示本發明之灰階遮罩的缺陷修正方 的第1實施形態’第9A圖為缺陷修正前之俯視圖，第9b :修正途中之俯視圖，第9C圖為缺陷修正後之俯視圖 第9D圖圖中之線L_L所作的側剖視圖第Μ 為表示第9D圖之截面中的透光率（τ)的曲線圖。 =10圖為顯示FIB裝置之構造的概略側視圖。 弟11A至11D圖顯示本發明之灰階遮罩的缺陷修正 法的第2實施形態’第11A圖為缺陷修正前之俯視圖， 11B圖為缺陷修正後之俯視 之線L-L所作的側剖視圖， 圖’第1 1 C圖為沿第丨丨B圖 第11D圖為表示第11C圖之 截面中的透光率（T)的曲線圖。 第12A至12F圖為顯示本發明夕右抛i、命守 只| 咧之及階遮罩的製造步 驟之一例的剖視圖。 【主要元件符號說明】Fig. 9A to Fig. 9E show a first embodiment of the defect corrector of the gray scale mask of the present invention. Fig. 9A is a plan view before defect correction, 9b is a plan view in the middle of correction, and Fig. 9C is a defect correction. A side cross-sectional view of the line L_L in the 9D drawing of the rear plan view is a graph showing the light transmittance (τ) in the cross section of the 9D drawing. The =10 figure is a schematic side view showing the configuration of the FIB device. 11A to 11D are views showing a second embodiment of the defect correction method of the gray scale mask of the present invention. FIG. 11A is a plan view before the defect correction, and FIG. 11B is a side cross-sectional view of the line LL after the defect correction. 'The 1 1 C picture is a graph showing the light transmittance (T) in the section of Fig. 11C along the 11th line of Fig. B. Figs. 12A to 12F are cross-sectional views showing an example of the manufacturing steps of the present invention, which is the same as the mask of the present invention. [Main component symbol description]
1 玻璃基板 2 閘極電極 3 閘極絕緣膜 4 第1半導體膜 5 第2半導體膜 6 源極-;及極用金屬膜 6a 源極 6b 汲極 7 正型光阻膜 7a 第1光阻圖案 7b 第2光阻圖案 -27- 1378318 修正本1 glass substrate 2 gate electrode 3 gate insulating film 4 first semiconductor film 5 second semiconductor film 6 source-- and electrode metal film 6a source 6b drain 7 positive-type photoresist film 7a first photoresist pattern 7b second photoresist pattern -27- 1378318 revision
ίο 11 1 la, 1 lb 12 13 13a 20 21 22 23 24 25 26 27, 28, 29 30 31 33 40 41 42 43 44 45 46 灰階遮罩 遮光部 遮光部 透光部 半透光部 遮光圖案 灰階遮罩 遮光部 透光部 半透光部 透明基板 遮光膜 半透光膜 修正膜 被轉印體 基板 光阻圖案 FIB(Focused Ion Beam Deposition ；聚 焦離子束沉積）裝置 離子源 電磁光學系 電子搶 氣搶 XY作業台 掃描放大器 -28- 1378318 修正本Οο 11 1 la, 1 lb 12 13 13a 20 21 22 23 24 25 26 27, 28, 29 30 31 33 40 41 42 43 44 45 46 Grayscale mask shading part shading part translucent part semi-transmissive part shading pattern gray Step mask shade portion translucent portion semi-transmissive portion transparent substrate light-shielding film semi-transparent film correction film transfer substrate substrate resist pattern FIB (Focused Ion Beam Deposition; focused ion beam deposition) device ion source electromagnetic optical system electronic grab Gas grab XY workbench scan amplifier -28- 1378318
47 離子束 48 二次離子檢測器 49 蝕刻用氣搶 50 白缺陷區域 51，52, 53 成膜區域 60 灰階遮罩 61 遮光部 62 透光部 63 半透光部 64 透明基板 65 遮光膜 66 半透光膜 67 修正膜 70 白缺陷區域 80 光阻圖案 81 光阻圖案47 Ion beam 48 Secondary ion detector 49 Etching gas grab 50 White defect area 51, 52, 53 Film forming area 60 Gray scale mask 61 Light blocking portion 62 Light transmitting portion 63 Semi-transmissive portion 64 Transparent substrate 65 Light shielding film 66 Semi-transmissive film 67 correction film 70 white defect region 80 photoresist pattern 81 photoresist pattern
-29--29-
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| Application Number | Priority Date | Filing Date | Title |
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| JP2007095881A JP5102912B2 (en) | 2007-03-31 | 2007-03-31 | Gray-tone mask defect correcting method, gray-tone mask manufacturing method, and pattern transfer method |
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| TW200848919A TW200848919A (en) | 2008-12-16 |
| TWI378318B true TWI378318B (en) | 2012-12-01 |
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| TW097111158A TWI378318B (en) | 2007-03-31 | 2008-03-28 | Method of correcting a defect in a gray tone mask, method of manufacturing a gray tone mask, gray tone mask, and method of transferring a pattern |
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| Country | Link |
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| JP (1) | JP5102912B2 (en) |
| KR (1) | KR101444463B1 (en) |
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| TWI659262B (en) * | 2017-08-07 | 2019-05-11 | 日商Ｈｏｙａ股份有限公司 | Method of repairing a photomask, method of manufacturing a photomask, photomask and method of manufacturing a display device |
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| JP5336226B2 (en) * | 2008-02-26 | 2013-11-06 | Ｈｏｙａ株式会社 | Multi-tone photomask manufacturing method |
| CN101943854B (en) * | 2009-07-03 | 2012-07-04 | 深圳清溢光电股份有限公司 | Design method of half-exposure region of half-gray-scale mask plate and manufacture method thereof |
| JP2011081282A (en) * | 2009-10-09 | 2011-04-21 | Hoya Corp | Method, device, and head for correcting defect of photomask, device for detecting defect of photomask, and method for manufacturing photomask |
| KR101032695B1 (en) | 2010-04-26 | 2011-06-10 | 주식회사 에스앤에스텍 | Defect Fixing Method of Graytone Photomask, Grayton Photomask Blank, Grayton Photomask, and Manufacturing Method thereof |
| CN104746041B (en) * | 2015-03-04 | 2018-02-13 | 深圳清溢光电股份有限公司 | The method that laser Gaseous depositional mode repairs white defect |
| JP6666694B2 (en) * | 2015-11-12 | 2020-03-18 | 株式会社エスケーエレクトロニクス | Multi-tone halftone mask and manufacturing method thereof |
| JP6235643B2 (en) | 2016-03-25 | 2017-11-22 | Hoya株式会社 | Pattern correction method, photomask manufacturing method, photomask, and correction film forming apparatus |
| JP6557638B2 (en) | 2016-07-06 | 2019-08-07 | 株式会社エスケーエレクトロニクス | Halftone mask and halftone mask blanks |
| KR20180066354A (en) * | 2016-12-08 | 2018-06-19 | 주식회사 피케이엘 | Defect repairing method for transflective area of half tone mask and defect repair half tone mask using the same |
| US11086222B2 (en) | 2018-11-23 | 2021-08-10 | Nanya Technology Corporation | Method of manufacturing semiconductor structure |
| JP6741893B1 (en) * | 2020-03-04 | 2020-08-19 | 株式会社エスケーエレクトロニクス | Halftone mask defect correction method, halftone mask manufacturing method, and halftone mask |
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| JP3630935B2 (en) * | 1997-08-18 | 2005-03-23 | Ｈｏｙａ株式会社 | Defect correction method for halftone phase shift mask |
| JPH11109605A (en) * | 1997-10-03 | 1999-04-23 | Toshiba Corp | Correction method of exposure mask |
| JP3556591B2 (en) * | 2000-09-29 | 2004-08-18 | Ｈｏｙａ株式会社 | Defect repair method of gray tone part in gray tone mask |
| JP4297693B2 (en) * | 2003-01-31 | 2009-07-15 | 株式会社ルネサステクノロジ | Photomask, photomask manufacturing method, and photomask manufacturing apparatus |
| JP3993125B2 (en) * | 2003-04-01 | 2007-10-17 | Ｈｏｙａ株式会社 | Gray tone mask defect correction method |
| JP4559921B2 (en) * | 2005-06-20 | 2010-10-13 | エスアイアイ・ナノテクノロジー株式会社 | Gray tone pattern film defect correction method |
| KR100936716B1 (en) * | 2005-09-23 | 2010-01-13 | 엘지이노텍 주식회사 | Method for repairing defect of half tone mask and repaired half tone mask |
| JP2007151850A (en) * | 2005-12-06 | 2007-06-21 | Taito Corp | Terminal game device |
| JP4446395B2 (en) * | 2006-02-02 | 2010-04-07 | Ｈｏｙａ株式会社 | Gray-tone mask defect correcting method and gray-tone mask |
| JP5036349B2 (en) * | 2007-02-28 | 2012-09-26 | Ｈｏｙａ株式会社 | Gray-tone mask defect correcting method and gray-tone mask manufacturing method |
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| TWI659262B (en) * | 2017-08-07 | 2019-05-11 | 日商Ｈｏｙａ股份有限公司 | Method of repairing a photomask, method of manufacturing a photomask, photomask and method of manufacturing a display device |
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| CN101276140A (en) | 2008-10-01 |
| JP5102912B2 (en) | 2012-12-19 |
| CN101276140B (en) | 2012-02-22 |
| KR101444463B1 (en) | 2014-09-24 |
| KR20080089269A (en) | 2008-10-06 |
| TW200848919A (en) | 2008-12-16 |
| JP2008256759A (en) | 2008-10-23 |
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