TWI534281B - Film forming device - Google Patents

Description

Film forming device

The present invention relates to a film forming apparatus which evaporates a film forming material by a plasma beam in a vacuum chamber and causes particles of a film forming material to adhere to a film forming object.

As a film forming apparatus that forms a film on the surface of a film formation object, for example, there is a film forming apparatus using an ion plating method. In the ion plating method, particles of the evaporated film forming material are diffused in the vacuum chamber to adhere to the surface of the film formation object. The film forming apparatus comprises: a plasma source disposed on a side wall of the vacuum container and configured to generate a plasma beam; a steering coil to introduce a plasma beam generated by the plasma source into the vacuum container; and a main furnace as a main anode A film forming material is retained; and a ring hearth as an auxiliary anode surrounds the main hearth (for example, refer to Patent Document 1). Further, the film forming apparatus described in Patent Document 1 includes, for example, two sets of plasma sources, a steering coil, a main hearth, and a ring hearth, thereby evaporating the film forming material from two evaporation sources to expand the film formation. range.

[Previous Technical Literature] [Patent Document]

[Patent Document 1] Japanese Patent Laid-Open No. Hei 9-256147

In the film forming apparatus described above, the magnetic field generated by the steering coil and the self-induced magnetic field generated by the current in the plasma beam are added to the magnetic field generated in the ring furnace near the main hearth, thereby causing the vicinity of the main hearth. Magnetic field symmetry is destroyed. Therefore, even if the film forming material is disposed in alignment with the central axis of the ring hearth in the main hearth, the plasma beam is not incident on the center of the film forming material, but is incident on the center of the film forming material. The location of the degree of distance. When the plasma beam is not incident on the center of the film forming material, the film forming material partially sublimes or evaporates. Thus, it is difficult to continuously supply (extrude the film forming material from the main hearth), and it is difficult to stably perform sublimation or evaporation of the film forming material for a long period of time.

In order to cope with the occurrence of an offset at the position where the plasma beam is incident, it is conceivable that the position of the master hearth is shifted with respect to the central axis of the ring hearth in accordance with the offset. However, the amount of shift of the position at which the plasma beam is incident varies depending on the operating conditions of the film forming apparatus. Therefore, when the operating conditions are not constant, it is difficult to arrange the main hearth at an appropriate position. Moreover, manually changing the mounting position of the main hearth is very troublesome and difficult to install in an accurate position.

Accordingly, it is an object of the present invention to provide a film forming material which is an evaporation source which can be easily adjusted to a position where a plasma beam is introduced. Membrane device.

In the film forming apparatus of the present invention, the film forming material is heated by a plasma beam in a vacuum chamber to evaporate, and the evaporating particles of the film forming material are attached to the film forming object; Generating a plasma beam in a vacuum chamber; the main hearth, which serves as a main anode, is filled with a film forming material that becomes an evaporation source, and is introduced into a plasma beam into a film forming material or introduced into a plasma beam; As an auxiliary anode, disposed around the main hearth and guiding the plasma beam; a pair of auxiliary coils are disposed on both sides of the evaporation source when viewed from the axial direction of the ring hearth; and the auxiliary coil power supply unit When the surface on which the film formation object is placed is set to the front surface, a direct current is supplied to the pair of auxiliary coils so that the polarities of the front side of the pair of auxiliary coils are different from each other.

The film forming apparatus includes one pair of auxiliary coils disposed on both sides of the evaporation source when viewed from the axial direction of the ring hearth. A direct current is supplied to the pair of auxiliary coils so that the polarities on the front side are different from each other. Thereby, a magnetic field can be generated in a direction intersecting the axial direction of the ring hearth on the front side of the evaporation source by the pair of auxiliary coils.

Thereby, the position at which the plasma beam is introduced into the evaporation source can be easily adjusted. Further, by adjusting the plasma beam to the center of the film forming material, local deposition or evaporation of the film forming material can be suppressed, and the film forming material can be uniformly sublimated or evaporated. As a result, the sublimation or evaporation of the film forming material can be stabilized to extend the time of continuous operation.

Here, the film forming apparatus may be configured to have at least two pairs of auxiliary coils, and the pair of auxiliary coils are disposed so as to surround the main hearth in different directions. According to the film forming apparatus of this configuration, since the two pairs of auxiliary coils are disposed so as to surround the main hearth in mutually different directions, the magnetic field formed by the pair of auxiliary coils can be generated in a plurality of different directions. Therefore, the direction of the magnetic field can be adjusted in a plurality of different directions by the magnetic field generated by the two pairs of auxiliary coils. As a result, since the adjustment range of the position where the plasma beam is introduced can be enlarged, it is easy to adjust the position at which the plasma beam is introduced to be aligned with the center of the film formation material.

Further, the pair of auxiliary coils may be arranged on the front side of the ring hearth.

When the pair of auxiliary coils are disposed on the front side of the ring hearth, the magnetic field formed by the pair of auxiliary coils can be generated on the front side of the ring hearth to easily adjust the position at which the plasma beam is introduced.

Further, the film forming apparatus may further include a magnetic field adjusting unit that adjusts a direct current supplied to the auxiliary coil to adjust a magnetic field generated by the auxiliary coil. According to the film forming apparatus of this configuration, since the direct current supplied to the auxiliary coil can be adjusted to adjust the intensity of the magnetic field generated by the pair of auxiliary coils, it is possible to easily adjust the introduction of the plasma beam to the evaporation source by adjusting the current. The location. Thereby, the plasma beam can be easily introduced into the center of the film forming material, so that local evaporation or sublimation of the film forming material can be suppressed.

Further, the film forming apparatus may be provided with a plurality of sets of main hearths and ring hearths in the vacuum chamber, and respectively provided corresponding to the main hearth and the ring hearth There is a plasma source and a pair of auxiliary coils.

For example, when the film forming apparatus includes a plurality of main hearths and ring hearths, it is very troublesome to adjust the relative positions of the respective master hearths and the ring hearths. Since the film forming apparatus of the present invention can easily adjust the position at which the plasma is introduced, it is particularly effective when a plurality of main hearths and ring hearths are provided.

The film forming apparatus of the present invention can easily adjust the position at which the plasma is introduced to the film forming material as the evaporation source by adjusting the magnetic field generated by the pair of auxiliary coils.

1‧‧‧ film forming device

6‧‧‧ ring furnace

7‧‧‧ Plasma source

10‧‧‧vacuum chamber

11‧‧‧ Film formation object

17‧‧‧Main hearth

20‧‧‧ permanent magnet

23‧‧‧Auxiliary coil set

26, 27‧‧‧A pair of first auxiliary coils

28, 29‧‧‧A pair of second auxiliary coils

Fig. 1 is a cross-sectional view showing a configuration of an embodiment of a film forming apparatus of the present invention.

Fig. 2 is a schematic view showing a magnetic field in the vicinity of the main hearth.

[Fig. 3] (a) is a plan view showing a ring magnet and an auxiliary coil of the ring hearth; (b) is a cross-sectional view showing a ring magnet and an auxiliary coil of the ring hearth.

Fig. 4 is a view showing the intensity of the magnetic field on the central axis formed by the auxiliary coil.

Fig. 5 is an enlarged cross-sectional view showing a main hearth and a ring hearth portion.

Fig. 6 is a cross-sectional view showing a vacuum chamber in which a plurality of plasma sources are provided.

Hereinafter, an embodiment of a film forming apparatus formed by the present invention will be described in detail with reference to the accompanying drawings. In the description of the drawings, the same elements are denoted by the same reference numerals, and the repeated description is omitted.

The film forming apparatus 1 shown in Fig. 1 is a so-called ion plating apparatus used in an ion plating method. In addition, for convenience of explanation, the XYZ coordinate system is shown in FIG. The Y-axis direction is a direction in which a film formation object described later is conveyed. The X-axis direction is a direction in which the film formation object and the hearth mechanism described later face each other. The Z-axis direction is a direction orthogonal to the X-axis direction and the Y-axis direction.

The film forming apparatus 1 is a so-called vertical film forming apparatus, that is, the film forming object 11 is formed such that the thickness direction of the film forming object 11 is in the horizontal direction (the X-axis direction in FIG. 1). The object 11 is placed upright in the upright state or placed in the vacuum chamber 10 and transported. In this case, the X-axis direction is the horizontal direction and is the thickness direction of the film formation object 11 , the Y-axis direction is the horizontal direction, and the Z-axis direction is the vertical direction. On the other hand, in an embodiment of the film forming apparatus formed by the present invention, a so-called horizontal film forming apparatus may be used, and the film forming object is substantially vertical in the thickness direction of the film forming object. The direction is placed in the vacuum chamber and transported. At this time, the Z-axis and the Y-axis direction are the horizontal direction, and the X-axis direction is the vertical direction and becomes the plate thickness direction. Further, in the following embodiment, an embodiment of the film forming apparatus of the present invention will be described by taking a vertical case as an example.

The film forming apparatus 1 includes a hearth mechanism 2, a conveying mechanism 3, and a ring The hearth portion 4, the steering coil 5, the plasma source 7, the pressure adjusting device 8, and the vacuum chamber 10.

The vacuum chamber 10 has a transfer chamber 10a for transporting a film formation object 11 of a film on which a film formation material is to be formed, a film formation chamber 10b for diffusing the film formation material Ma, and a plasma beam to be irradiated from the plasma source 7. P receives the plasma port 10c in the vacuum chamber 10. The transfer chamber 10a, the film forming chamber 10b, and the plasma port 10c communicate with each other. The transfer chamber 10a is set in a predetermined transport direction (arrow A in the figure) (Y-axis). Further, the vacuum chamber 10 is made of a conductive material and is connected to a ground potential.

The conveyance mechanism 3 conveys the film formation object holding member 16 which holds the film formation object 11 in the state which opposes the film formation material Ma in the conveyance direction A. For example, the holding member 16 is a frame that holds the outer periphery of the film formation object. The transport mechanism 3 is composed of a plurality of transport rollers 15 provided in the transport chamber 10a. The conveyance rollers 15 are arranged at equal intervals in the conveyance direction A, and support the film formation object holding member 16 while being conveyed in the conveyance direction A. In addition, as the film formation object 11, for example, a plate-shaped member such as a glass substrate or a plastic substrate is used.

The plasma source 7 is of a pressure gradient type, and a main body portion thereof is connected to the film forming chamber 10b via a plasma port 10c provided in a side wall of the film forming chamber 10b. The plasma source 7 generates a plasma beam P in the vacuum chamber 10. The plasma bundle P generated in the plasma source 7 is emitted from the plasma port 10c into the film forming chamber 10b. The injection direction of the plasma jet P is controlled by the steering coil 5 provided to surround the plasma port 10c. The steering coil 5 generates a magnetic field in the Y-axis direction and introduces the plasma beam generated by the plasma source 7 into the center of the vacuum container. Coil.

The pressure adjusting device 8 is connected to the vacuum chamber 10 to adjust the pressure in the vacuum chamber 10. The pressure adjusting device 8 includes a pressure reducing unit such as a turbo molecular pump or a cryopump, and a pressure measuring unit that measures the pressure in the vacuum chamber 10 .

The hearth mechanism 2 is a mechanism for holding the film forming material Ma. The hearth mechanism 2 is disposed in the film forming chamber 10b of the vacuum chamber 10, and is disposed in the negative direction in the X-axis direction when viewed from the conveying mechanism 3. The hearth mechanism 2 has a main hearth 17, which is a main anode that introduces the plasma beam P emitted from the plasma source 7 into the film forming material Ma, or a plasma beam P that is introduced from the plasma source 7. The main anode.

The main hearth 17 has a cylindrical filling portion 17a filled with a film forming material Ma extending in the positive direction in the X-axis direction, and a flange portion 17b protruding from the filling portion 17a. The main hearth 17 is maintained at a positive potential with respect to the ground potential of the vacuum chamber 10, thereby attracting the plasma beam P. A through hole 17c for filling the film forming material Ma is formed in the filling portion 17a of the main hearth 17 into which the plasma beam P is incident. Further, the tip end portion of the film forming material Ma is exposed to the film forming chamber 10b at one end of the through hole 17c.

The ring hearth portion 4 has a ring hearth 6 as an auxiliary anode provided with an electromagnet for guiding the plasma beam P. The ring hearth 6 is disposed around the filling portion 17a of the main hearth 17 that holds the film forming material Ma. A film forming material Ma is disposed on the central axis CL6 of the ring hearth 6. Further, the film forming material Ma may be disposed at a position offset from the center of the ring hearth 6. The ring hearth 6 has an annular coil 9, an annular permanent magnet 20, and an annular container 12. The coil 9 and the permanent magnet 20 are housed in the container 12.

The film forming material Ma can be exemplified by a transparent conductive material such as ITO or ZnO, or an insulating sealing material such as SiON. When the film forming material Ma is made of an insulating material, when the main furnace cylinder 17 is irradiated with the plasma beam P, the main hearth 17 is heated by the current from the plasma beam P, and the front end portion of the film forming material Ma is evaporated. Or sublimation, the film-forming material particles (evaporated particles) Mb ionized by the plasma beam P are diffused into the film forming chamber 10b. Further, when the film forming material Ma is made of a conductive material, when the plasma beam P is irradiated to the main furnace cylinder 17, the plasma beam P is directly incident on the film forming material Ma, and the front end portion of the film forming material Ma is heated and evaporated. Or sublimation, the film-forming material particles Mb ionized by the plasma beam P are diffused into the film forming chamber 10b. The film-forming material particles Mb diffused into the film forming chamber 10b move in the positive X-axis direction of the film forming chamber 10b, and adhere to the surface of the film forming object 11 in the transfer chamber 10a. Further, the film forming material Ma is a cylindrical solid material formed into a predetermined length, and a plurality of film forming materials Ma are once filled in the hearth mechanism 2. Further, the film forming material Ma is sequentially extruded from the X-axis negative direction side of the hearth mechanism 2 in accordance with the consumption of the film forming material Ma so that the front end portion of the film forming material Ma at the foremost end side and the upper end of the main hearth 17 are provided. Maintain a defined positional relationship.

Further, the film forming apparatus 1 includes a combination of a plurality of sets of hearth mechanisms 2, a ring hearth portion 4, and a plasma source 7 in the film forming chamber 10b, and has a plurality of evaporation sources. The plurality of hearth mechanisms 2 are arranged at equal intervals in the Z-axis direction, and the ring hearth unit 4, the plasma source 7, and the steering coil 5 are disposed corresponding to the hearth mechanism 2, respectively. The film forming apparatus 1 can evaporate the film forming material Ma from a plurality of locations in the Z-axis direction and diffuse the film forming material particles Mb.

Next, the magnetic field distribution in the vicinity of the main hearth 17 will be described with reference to Fig. 2 . 2 shows the magnetic field distribution in a state in which the plasma beam emitted from the plasma source 7 is introduced into the main furnace cylinder 17 by the ring hearth 6. The arrows in the figure indicate the direction of the magnetic lines of force. The magnetic field in the vicinity of the main hearth 17 is affected by the magnetic field formed by the ring hearth 6, the magnetic field formed by the steering coil 5, and the magnetic field formed by the self-induction of the plasma beam P, as shown in Fig. 2, relative to the ring furnace. The central axis CL6 of the cylinder 6 is asymmetrically distributed. Therefore, the incident position of the plasma beam P is shifted from the central axis CL6 of the ring hearth 6, and is displaced from the center of the film forming material Ma disposed on the central axis CL6.

Here, the film forming apparatus 1 includes an auxiliary coil group 23 disposed around the filling portion 17a of the master cylinder 17 as viewed from the direction of the central axis CL6 of the ring hearth 6, and an auxiliary coil power source for supplying a direct current to the auxiliary coil group 23. The portion 24 and a current adjustment unit (magnetic field adjustment unit) 25 that adjusts a direct current supplied to the auxiliary coil group 23.

As shown in FIG. 3, the auxiliary coil group 23 has a pair of first auxiliary coils 26 and 27 and a pair of second auxiliary coils 28 and 29. In addition, in FIG. 3(a), the outer casing 12 of the ring hearth portion 4 is omitted. The auxiliary coil group 23 is housed in the outer casing 12.

When the surface on which the transport mechanism 3 (film formation target) is placed is the front surface, the auxiliary coil group 23 is disposed on the front surface of the permanent magnet 20 (the surface on the opposite side of the coil 9). When the pair of first auxiliary coils 26 and 27 are viewed from the X-axis direction, the evaporation source is disposed on both sides in the Y-axis direction. In Fig. 3, the first auxiliary coil 26 is disposed on the left side, and the first auxiliary coil 26 is disposed on the right side. Auxiliary coil 27. The first auxiliary coils 26 and 27 are planar coils wound in a substantially fan shape along the circumferential direction of the annular permanent magnet 20. The axial directions of the first auxiliary coils 26 and 27 are arranged along the X-axis direction.

When the pair of second auxiliary coils 28 and 29 are viewed from the X-axis direction, the evaporation source is disposed on both sides in the Z-axis direction. In FIG. 3(a), the second auxiliary coil 28 is disposed on the upper side, and the second auxiliary coil 29 is disposed on the lower side. The second auxiliary coils 28 and 29 are planar coils wound in a substantially fan shape along the circumferential direction of the annular permanent magnet 20. The axial directions of the second auxiliary coils 28 and 29 are arranged along the X-axis direction.

The auxiliary coil power supply unit 24 supplies a direct current to the pair of first auxiliary coils 26 and 27 and the pair of second auxiliary coils 28 and 29, respectively. The auxiliary coil power supply unit 24 supplies a direct current so that the polarities of the front sides of the pair of first auxiliary coils 26 and 27 are different from each other. For example, a DC current is supplied so that the polarity of the front side of the first auxiliary coil 26 becomes the S pole and the polarity of the front side of the first auxiliary coil 27 becomes the N pole. At this time, the magnetic field in the Y-axis direction is formed from the first auxiliary coil 27 to the first auxiliary coil 26 by the pair of first auxiliary coils 26 and 27. The current values of the first auxiliary coils 26 and 27 are appropriately set in accordance with the magnitude of the magnetic field formed by the pair of first auxiliary coils 26 and 27.

Further, the auxiliary coil power supply unit 24 supplies a direct current so that the polarities on the front sides of the pair of second auxiliary coils 28 and 29 are different from each other. For example, a DC current is supplied so that the polarity of the front side of the second auxiliary coil 28 becomes the S pole and the polarity of the front side of the second auxiliary coil 29 becomes the N pole. At this time, by the pair of second auxiliary coils 28, 29 from the first The auxiliary coil 29 forms a magnetic field in the Z-axis direction to the second auxiliary coil 28. The current values of the second auxiliary coils 28 and 29 are appropriately set in accordance with the magnitude of the magnetic field formed by the pair of second auxiliary coils 28 and 29.

The current adjustment unit 25 adjusts the direct current supplied to the first auxiliary coils 26 and 27 and the second auxiliary coils 28 and 29. The current adjustment unit 25 adjusts the current values supplied to the first auxiliary coils 26 and 27 and the second auxiliary coils 28 and 29 by changing, for example, the resistance value. The current adjustment unit 25 can adjust the intensity of the magnetic field generated by the first auxiliary coils 26 and 27 by adjusting the current values supplied to the first auxiliary coils 26 and 27 and the second auxiliary coils 28 and 29, and by the second The strength of the magnetic field generated by the auxiliary coils 28, 29.

Further, the current adjustment unit 25 can reverse the direction of the direct current supplied to the pair of first auxiliary coils 26 and 27, and invert the polarity of the first auxiliary coils 26 and 27 and change the first auxiliary coils 26 and 27 to generate the first auxiliary coils 26 and 27. The direction of the magnetic field. The current adjustment unit 25 may reverse the direction of the direct current supplied to the pair of second auxiliary coils 28 and 29 to invert the polarity of the second auxiliary coils 28 and 29 and change the generation by the second auxiliary coils 28 and 29. The direction of the magnetic field.

4 shows the intensity H ₁ of the magnetic field formed on the central axis CL6 of the ring hearth 6 by the pair of first auxiliary coils 26, 27. The vertical axis shown in FIG. 4 indicates the distance from the first auxiliary coils 26 and 27 in the central axis direction, and the horizontal axis indicates the intensity of the magnetic field in the Y-axis direction. In the state of Fig. 4, the magnetic field formed by the pair of first auxiliary coils 26, 27 is directed to the left.

As shown in Fig. 2, the magnetic field generated by the coil 9 and the permanent magnet 20 of the ring hearth 6 is weakened at a position that travels a predetermined distance from the ring hearth 6 toward the front side. At the position where the magnetic field is weakened, a magnetic field is generated by the pair of first auxiliary coils 26, 27 so as to exhibit the peak value H _{1P of the} magnetic field intensity H ₁ . Thereby, the influence of the magnetic field generated by the steering coil 5 or the self-induced magnetic field generated by the plasma beam can be effectively canceled to cause the plasma beam P to enter the center of the film forming material Ma (the central axis CL6 of the ring furnace 6) . For example, the peak value H _1P of the magnetic field intensity H ₁ formed by the pair of first auxiliary coils 26 and 27 is a position spaced apart from the first auxiliary coils 26 and 27 by 6 cm in the direction of the central axis CL6.

Next, the action of the film forming apparatus 1 of the present embodiment will be described.

First, before the film forming apparatus 1 is used, the irradiation position of the plasma beam P is confirmed. The film forming material Ma is filled in the filling portion 17a of the main hearth 17. The film forming apparatus 1 irradiates the plasma beam P from the plasma source 7. At this time, it is confirmed that the position of the plasma beam P is introduced. When the plasma beam P is introduced to the precise position (center) with respect to the film forming material Ma, the amount of reduction of the center of the film forming material Ma is the largest, and the amount of the film forming material Ma is symmetrically reduced by the same amount. In addition, the reduced portion of the film forming material Ma is shown by a broken line in FIG. When the plasma beam P is not introduced into the center of the film forming material Ma, the amount of reduction of the film forming material Ma is asymmetrical with respect to the central axis, and the decrease in one side is increased. In addition, when the irradiation position (incident position) of the plasma beam P is confirmed, as described above, the method of reducing the film formation material Ma can be confirmed, and the irradiation position itself of the plasma beam P can be measured using a plasma measuring instrument.

In the film forming apparatus 1, a pair of first auxiliary coils 26, 27 and a pair of second auxiliary coils 28 and 29 generate a magnetic field to correct the introduction position of the plasma beam P. The current value supplied to the pair of first auxiliary coils 26 and 27 and the pair of second auxiliary coils 28 and 29 is adjusted according to the offset amount of the plasma beam P to adjust the intensity of the magnetic field, thereby correcting the plasma beam P relative to the formation. The introduction position of the film material Ma. For example, the shift of the plasma beam P in the Y-axis direction is corrected by the magnetic field generated by the pair of first auxiliary coils 26, 27. The shift of the plasma beam P in the Z-axis direction is corrected by the magnetic field generated by the pair of second auxiliary coils 28, 29. After the position where the plasma beam P is introduced is corrected as described above, the film forming process is performed.

According to the film forming apparatus 1, the DC current is supplied to the pair of first auxiliary coils 26 and 27 so that the polarities on the front side are different from each other. Therefore, the pair of first auxiliary coils 26 and 27 can be on the front side of the evaporation source. The side generates a magnetic field along the Y-axis direction. Further, in the film forming apparatus 1, the direct current is supplied to the pair of second auxiliary coils 28 and 29 so that the polarities on the front side are different from each other. Therefore, the pair of second auxiliary coils 28 and 29 can be on the front side of the evaporation source. The side generates a magnetic field along the Z-axis direction.

Further, since the film forming apparatus 1 includes the current adjusting unit 25 that adjusts the direct current supplied to the first auxiliary coils 26 and 27, it is possible to adjust the direct current supplied to the pair of first auxiliary coils 26 and 27 to adjust the pair. 1 The strength of the magnetic field formed by the auxiliary coils 26, 27. Similarly, since the current adjustment unit 25 can adjust the current supplied to the pair of second auxiliary coils 28 and 29, the strength of the magnetic field formed by the pair of second auxiliary coils 28 and 29 can be adjusted.

The film forming apparatus 1 can be automatically adjusted by the current adjusting unit 25 The currents of the pair of first auxiliary coils 26 and 27 and/or the pair of second auxiliary coils 28 and 29 may be adjusted by the worker to operate the current adjustment unit 25 to finely adjust the pair of first auxiliary coils 26, 27 and/or The current of the pair of second auxiliary coils 28, 29.

As described above, in the film forming apparatus 1, the position where the plasma beam P is introduced and the center of the film forming material Ma can be easily made by merely adjusting the current formed by the first auxiliary coils 26 and 27 and the second auxiliary coils 28 and 29. Align. Thereby, the plasma beam P is introduced into the center of the film forming material Ma, so that the film forming material can be prevented from being locally evaporated or sublimated at a position shifted from the central axis, and the film forming material can be stably evaporated or sublimated. As a result, in the film forming apparatus 1, the film forming material can be continuously supplied, and evaporation or sublimation of the film forming material can be performed, whereby the continuous operation can be stably performed, and the continuous execution time can be extended.

Further, in the film forming apparatus 1, it is not necessary to change the mounting position of the master cylinder by a worker, and it is possible to generate the pair of first auxiliary coils 26 and 27 and/or the pair of second auxiliary coils 28 and 29. The magnetic field adjusts the position at which the plasma beam P is incident. Further, even if the operating conditions are changed, the position at which the plasma beam P is incident can be easily adjusted in the film forming apparatus 1.

The present invention is not limited to the embodiments described above, and various modifications as described below can be made without departing from the spirit and scope of the invention.

For example, in the above embodiment, a plurality of sets of the main hearth 17 and the ring hearth 6 are provided, and the plasma source 7, the steering coil 5, and the auxiliary coil group 23 are provided corresponding to the main hearth 17 and the ring hearth 6, respectively. Current adjustment unit 25, but it may be a film forming apparatus having only one set of the main hearth 17 and the ring hearth 6. Further, as shown in FIG. 6, a film forming apparatus including a plurality of evaporation sources in the Y-axis direction (transport direction) and the Z-axis direction may be used. In addition, in FIG. 6, the auxiliary coil group 23 is abbreviate|omitted. In the film forming apparatus including a plurality of evaporation sources, if the auxiliary coil group 23 is provided corresponding to each evaporation source, the introduction position of the plasma bundle P on each evaporation source can be easily adjusted, which is particularly effective.

Further, in the above-described embodiment, the auxiliary coil group 23 includes the pair of first auxiliary coils 26 and 27 and the pair of second auxiliary coils 28 and 29. However, only the pair of first or second auxiliary coils may be provided. Composition. Further, the auxiliary coil group 23 may be an auxiliary coil group including three or more pairs of auxiliary coils disposed to face each other in different directions. Further, the opposing direction of the auxiliary coil is not limited to the Y-axis direction or the Z-axis direction, and may be disposed to face each other in other directions.

Further, the shape of the pair of auxiliary coils is not limited to a sector shape, and may be other shapes such as a circle or a rectangle.

Further, in the above embodiment, the auxiliary coil group 23 is disposed on the front side of the permanent magnet 20. However, the auxiliary coil group 23 may be disposed between the permanent magnet 20 and the coil 9, or may be disposed at another position.

Further, the auxiliary coil group 23 may not be housed in the outer casing 12 of the ring hearth portion 4, or may be housed in a casing separately provided from the outer casing 12.

4‧‧‧ Ring furnace department

6‧‧‧ ring furnace

9‧‧‧ coil

12‧‧‧ Container

20‧‧‧ permanent magnet

26‧‧‧1st auxiliary coil

27‧‧‧1st auxiliary coil

28‧‧‧2nd auxiliary coil

29‧‧‧2nd auxiliary coil

CL6‧‧‧ center axis

Claims (5)

A film forming apparatus which evaporates a film forming material by a plasma beam in a vacuum chamber, and causes evaporating particles of the film forming material to adhere to a film forming object; and is characterized by: a plasma source a plasma beam is generated in the vacuum chamber; a main furnace is used as a main anode, and the film forming material serving as an evaporation source is filled, and the plasma beam is introduced into the film forming material or introduced into the plasma. a ring furnace; as an auxiliary anode, disposed around the main hearth and guiding the plasma beam; and a pair of auxiliary coils for enveloping the evaporation when viewed from the axial direction of the ring hearth The source is disposed on both sides, and the auxiliary coil power supply unit supplies a direct current to the pair of auxiliary coils when the surface on which the film formation object is placed is provided on the front side, so that the polarities of the front side of the pair of auxiliary coils are different from each other. . The film forming apparatus of claim 1, wherein the film forming apparatus has at least two pairs of the auxiliary coils; and the pair of auxiliary coils are disposed to surround the main hearth in different directions. The film forming apparatus according to claim 1 or 2, wherein the pair of auxiliary coils are disposed on a front side of the ring hearth. The film forming apparatus according to claim 1 or 2, further comprising: a magnetic field adjusting unit that adjusts a direct current supplied to the auxiliary coil to adjust a magnetic force generated by a direct current of the auxiliary coil field. The film forming apparatus of claim 1 or 2, wherein a plurality of sets of the main hearth and the ring hearth are provided in the vacuum chamber; and the plasma source is respectively provided corresponding to the main hearth and the ring hearth And the aforementioned pair of auxiliary coils.