TWI500789B - Film forming device - Google Patents

Description

Film forming device

The present invention relates to a film forming apparatus which evaporates a film forming material by a plasma beam in a vacuum chamber and causes particles of a film forming material to adhere to a film forming object.

As a film forming apparatus that forms a film on the surface of a film formation object, for example, there is a film forming apparatus using an ion plating method. In the ion plating method, particles of the evaporated film forming material are diffused in the vacuum chamber to adhere to the surface of the film formation object. The film forming apparatus comprises: a plasma source for generating a plasma beam; a main furnace as a main anode, which holds a film forming material; and a ring furnace as an auxiliary anode, which surrounds the main hearth (for example, see Patent Document 1). Further, in the film forming apparatus described in Patent Document 1, for example, two sets of plasma sources, a master hearth, and a ring hearth are provided, whereby the film forming material is evaporated from two evaporation sources to expand the range of film formation.

[Previous Technical Literature] [Patent Literature]

[Patent Document 1] Japanese Patent Laid-Open Publication No. Hei 9-256147

Here, it is required to improve the film quality of the film-forming material adhering to the film formation object. For example, by setting a certain film formation condition by changing the film formation conditions such as the oxygen concentration in the vacuum chamber and the state of the plasma, the film quality of the specific region of the film formation object can be improved. However, in a specific region where the film quality is improved and a region around it, the difference in film quality increases, and the film quality distribution may become uneven.

Therefore, an object of the invention is to provide a film forming apparatus capable of achieving uniform film distribution in a film formation surface of a film formation object.

In the film forming apparatus of the present invention, the film forming material is heated by a plasma beam in a vacuum chamber to evaporate, and the evaporated particles of the film forming material are attached to the film forming object; Generating a plasma beam in a vacuum chamber; the main hearth, which serves as a main anode, is filled with a film forming material that becomes an evaporation source, and is introduced into the film forming material into the plasma beam or into a plasma beam; a ring hearth, As an auxiliary anode, it is disposed around the main hearth and guides the plasma beam; and the evaporation direction adjusting portion changes the direction of the evaporated particles evaporated from the evaporation source every predetermined time.

The film forming apparatus is provided with an evaporation direction adjustment in which the direction of the evaporating particles of the film forming material evaporated from the evaporation source is changed every predetermined time period. With the configuration of the portion, it is possible to change the diffusion state of the evaporated particles by changing the direction of the evaporated particles evaporated from the evaporation source over time. Since the degree of activity of the evaporating particles differs depending on the evaporating particles, by changing the diffusion state of the evaporating particles, it is possible to disperse the evaporating particles having high activity and to expand a region having a good film quality. Thereby, variation in the position at which the evaporating particles having high activity are adhered can be suppressed to achieve uniformization of the film quality distribution.

Here, the evaporation direction adjusting portion can adjust the expanded width of the evaporated particles evaporated from the evaporation source. It is possible to change the diffusion state of the evaporated particles by changing the expanded width of the evaporated particles every predetermined time period, and it is possible to suppress the variation in the position at which the evaporating particles having high activity are adhered, thereby achieving uniformization of the film quality distribution.

The film forming apparatus may be provided with a plurality of sets of plasma sources, a main hearth and a ring hearth, and the evaporation direction adjusting portion may periodically adjust the expanded width to shift the phase of the change width of the adjacent evaporation sources. Thereby, the diffusion state can be changed such that the expanded width of the evaporated particles becomes different in the adjacent evaporation source. For example, in a region facing the film formation object at a position corresponding to the center of the adjacent evaporation source, the evaporating particles evaporated from one evaporation source can be adhered, and the evaporated particles evaporated from the other evaporation source can be attached, and The variation in the position at which the evaporating particles having high activity are adhered can be suppressed to achieve uniformization of the film quality distribution.

Further, the evaporation direction adjusting portion can adjust the direction of the diffusion center of the evaporated particles evaporated from the evaporation source. It is possible to change the direction of the diffusion center of the evaporated particles at a predetermined time interval to change the diffusion state of the evaporated particles, and to suppress the position at which the evaporating particles having high activity are attached. Poor to achieve homogenization of the membrane distribution. Further, the direction of the diffusion center means the traveling direction of the evaporated particles at the center of the expanded width of the evaporated particles.

The film forming apparatus may have a plurality of sets of plasma sources, a main hearth and a ring hearth, and the evaporation direction adjusting section may periodically change the direction of the diffusion center so that the direction of the change of the direction of the diffusion center in the adjacent evaporation source is the same. Thereby, the diffusion state can be changed to be the same in the direction of the diffusion center of the evaporated particles evaporated from the adjacent evaporation source. For example, in a region facing the film formation object at a position corresponding to the center of the adjacent evaporation source, it is possible to prevent the evaporating particles from simultaneously arriving from the two evaporation sources, and it is possible to suppress the position where the evaporating particles having high activity are attached. The deviation is to achieve homogenization of the membrane distribution.

Further, the evaporation direction adjusting portion may have an auxiliary coil superposed on the ring hearth to change the direction of the diffusion center by changing the magnetic field formed by the auxiliary coil. Thereby, the direction of the current flowing in the auxiliary coil can be changed to change the magnetic field, so that the direction of the diffusion center of the evaporated particles can be easily changed.

Here, the auxiliary coil may be configured to include a pair of inner coils which are disposed on both sides of the evaporation source when viewed from the axial direction of the ring hearth; and an outer coil disposed in the pair of inner coils The outer side; and the direction of the magnetic field formed by the pair of inner coils and the direction of the magnetic field formed by the outer coil are set to opposite directions. The reaching distance of the magnetic field formed by the pair of inner coils disposed at a position close to the evaporation source is shorter than the reaching distance of the magnetic field formed by an outer coil disposed at a position away from the evaporation source. In other words, in the traveling direction of the evaporating particles, a magnetic field formed by a pair of inner coils can be generated at a position close to the evaporation source, and at a position away from the evaporation source. A magnetic field formed by an outer coil is produced. Thereby, in the vicinity of the evaporation source, a magnetic field formed by a pair of inner coils is generated to eliminate the influence of a magnetic field formed by an outer coil, and at a position away from the evaporation source, the evaporated particles can be changed by a magnetic field formed by an outer coil. The direction of the diffusion center.

According to the invention, it is possible to achieve uniformization of the film quality distribution in the film formation surface of the film formation object.

1‧‧‧ film forming device

6, 41‧‧‧ ring furnace

7‧‧‧ Plasma source

10‧‧‧vacuum chamber

11‧‧‧ Film formation object

17‧‧‧Main hearth

20‧‧‧ permanent magnet

21, 40‧‧‧Evaporation direction adjustment department

42, 43‧‧‧ a pair of inner coils

44, 45‧‧‧ an external coil

46‧‧‧Auxiliary coil

Fig. 1 is a cross-sectional view showing a configuration of an embodiment of a film forming apparatus of the present invention.

Fig. 2 is a schematic view showing a magnetic field in the vicinity of a main hearth.

Fig. 3 is a schematic view showing temporal changes in the expanded width of the film-forming material particles.

Fig. 4 is a plan view showing a ring hearth of a film forming apparatus according to a second embodiment of the present invention.

Fig. 5 is a cross-sectional view taken along line V-V shown in Fig. 3.

Fig. 6 is a schematic view showing temporal changes in the direction of the diffusion center of the film-forming material particles.

Fig. 7 is a view showing the intensity of a magnetic field formed by an inner coil and an outer coil.

Hereinafter, an embodiment of a film forming apparatus formed by the present invention will be described in detail with reference to the accompanying drawings. In the description of the drawings, the same elements are denoted by the same reference numerals, and the repeated description is omitted.

The film forming apparatus 1 shown in Fig. 1 is a so-called ion plating apparatus used in an ion plating method. In addition, for convenience of explanation, the XYZ coordinate system is shown in FIG. The Y-axis direction is a direction in which a film formation object described later is conveyed. The X-axis direction is a direction in which the film formation object and the hearth mechanism described later face each other. The Z-axis direction is a direction orthogonal to the X-axis direction and the Y-axis direction.

[First embodiment]

The film forming apparatus 1 is a so-called vertical film forming apparatus, that is, the film forming object 11 is formed such that the thickness direction of the film forming object 11 is in the horizontal direction (the X-axis direction in FIG. 1). The object 11 is placed upright in the upright state or placed in the vacuum chamber 10 and transported. In this case, the X-axis direction is the horizontal direction and is the thickness direction of the film formation object 11 , the Y-axis direction is the horizontal direction, and the Z-axis direction is the vertical direction. On the other hand, in an embodiment of the film forming apparatus formed by the present invention, a so-called horizontal film forming apparatus may be used, and the film forming object is substantially vertical in the thickness direction of the film forming object. The direction is placed in the vacuum chamber and transported. At this time, the Z-axis and the Y-axis direction are the horizontal direction, and the X-axis direction is the vertical direction and becomes the plate thickness direction. Further, in the following embodiment, an embodiment of the film forming apparatus of the present invention will be described by taking a vertical case as an example.

The film forming apparatus 1 includes a hearth mechanism 2, a conveying mechanism 3, a ring hearth 6, a plasma source 7, a pressure adjusting device 8, and a vacuum chamber 10.

The vacuum chamber 10 has a transfer chamber 10a for transporting a film formation object 11 of a film on which a film formation material is to be formed, a film formation chamber 10b for diffusing the film formation material Ma, and a plasma beam to be irradiated from the plasma source 7. P receives the plasma port 10c in the vacuum chamber 10. The transfer chamber 10a, the film forming chamber 10b, and the plasma port 10c communicate with each other. The transfer chamber 10a is set in a predetermined transport direction (arrow A in the figure) (Y-axis). Further, the vacuum chamber 10 is made of a conductive material and is connected to a ground potential.

The conveyance mechanism 3 conveys the film formation object holding member 16 which holds the film formation object 11 in the state which opposes the film formation material Ma in the conveyance direction A. For example, the holding member 16 is a frame that holds the outer periphery of the film formation object. The transport mechanism 3 is composed of a plurality of transport rollers 15 provided in the transport chamber 10a. The conveyance rollers 15 are arranged at equal intervals in the conveyance direction A, and support the film formation object holding member 16 while being conveyed in the conveyance direction A. In addition, as the film formation object 11, for example, a plate-shaped member such as a glass substrate or a plastic substrate is used.

The plasma source 7 is of a pressure gradient type, and a main body portion thereof is connected to the film forming chamber 10b via a plasma port 10c provided in a side wall of the film forming chamber 10b. The plasma source 7 generates a plasma beam P in the vacuum chamber 10. The plasma bundle P generated in the plasma source 7 is emitted from the plasma port 10c into the film forming chamber 10b. The direction in which the plasma beam P is emitted is controlled by a steering coil (not shown) provided in the plasma port 10c.

The pressure adjusting device 8 is connected to the vacuum chamber 10 to adjust the true The pressure inside the cavity 10. The pressure adjusting device 8 includes a pressure reducing unit such as a turbo molecular pump or a cryopump, and a pressure measuring unit that measures the pressure in the vacuum chamber 10 .

The hearth mechanism 2 is a mechanism for holding the film forming material Ma. The hearth mechanism 2 is disposed in the film forming chamber 10b of the vacuum chamber 10, and is disposed in the negative direction in the X-axis direction when viewed from the conveying mechanism 3. The hearth mechanism 2 has a main hearth 17, which is a main anode that introduces the plasma beam P emitted from the plasma source 7 into the film forming material Ma, or a plasma beam P that is introduced from the plasma source 7. The main anode.

The main hearth 17 has a cylindrical filling portion 17a filled with a film forming material Ma extending in the positive direction in the X-axis direction, and a flange portion 17b protruding from the filling portion 17a. The main hearth 17 is maintained at a positive potential with respect to the ground potential of the vacuum chamber 10, thereby attracting the plasma beam P. A through hole 17c for filling the film forming material Ma is formed in the filling portion 17a of the main hearth 17 into which the plasma beam P is incident. Further, the tip end portion of the film forming material Ma is exposed to the film forming chamber 10b at one end of the through hole 17c.

The ring hearth 6 is an auxiliary anode having an electromagnet for guiding the plasma beam P. The ring hearth 6 is disposed around the filling portion 17a of the main hearth 17 that holds the film forming material Ma. The ring furnace 6 has an annular coil 9, an annular permanent magnet 20, and an annular container 12, and the coil 9 and the permanent magnet 20 are housed in the container 12. The ring hearth 6 controls the direction of the plasma beam P incident on the film forming material Ma or the direction of the plasma beam P incident on the main hearth 17 in accordance with the magnitude of the current flowing in the coil 9. Further, the permanent magnet 20 can adjust the magnetic force so that a desired film thickness distribution can be obtained.

The film forming material Ma can be exemplified by a transparent conductive material such as ITO or ZnO, or an insulating sealing material such as SiON. When the film forming material Ma is made of an insulating material, when the main furnace cylinder 17 is irradiated with the plasma beam P, the main hearth 17 is heated by the current from the plasma beam P, and the front end portion of the film forming material Ma is evaporated. The film-forming material particles (evaporated particles) Mb ionized by the plasma beam P are diffused into the film forming chamber 10b. Further, when the film forming material Ma is made of a conductive material, when the plasma beam P is irradiated to the main furnace cylinder 17, the plasma beam P is directly incident on the film forming material Ma, and the front end portion of the film forming material Ma is heated. The film-forming material particles Mb ionized by the plasma beam P are diffused into the film forming chamber 10b by evaporation. The film-forming material particles Mb diffused into the film forming chamber 10b move in the positive X-axis direction of the film forming chamber 10b, and adhere to the surface of the film forming object 11 in the transfer chamber 10a. Further, the film forming material Ma is a cylindrical solid material formed into a predetermined length, and a plurality of film forming materials Ma are once filled in the hearth mechanism 2. Further, the film forming material Ma is sequentially extruded from the X-axis negative direction side of the hearth mechanism 2 in accordance with the consumption of the film forming material Ma so that the front end portion of the film forming material Ma at the foremost end side and the upper end of the main hearth 17 are provided. Maintain a defined positional relationship.

Further, the film forming apparatus 1 is a combination of a plurality of sets of hearth mechanisms 2, a ring hearth 6 and a plasma source 7, and has a plurality of evaporation sources. The plurality of hearth mechanisms 2 are arranged at equal intervals in the Z-axis direction, and the ring hearth 6 and the plasma source 7 are disposed corresponding to the hearth mechanism 2, respectively. The film forming apparatus 1 can evaporate the film forming material Ma from a plurality of locations in the Z-axis direction and diffuse the film forming material particles Mb.

Here, the film forming apparatus 1 is provided to be changed every predetermined time. The evaporation direction adjusting portion 21 in the direction of the film forming material particles Mb evaporated from the film forming material Ma of the evaporation source. The evaporation direction adjustment unit 21 includes an annular coil 9 of the ring furnace 6 and a hearth coil power supply unit 22 that supplies current to the coil 9. The hearth coil power supply unit 22 supplies a current for superimposing alternating current to the coil 9. The hearth coil power supply unit 22 alternately switches the current value to 20A or 30A every predetermined time period, thereby changing the magnetic field in the vicinity of the main hearth 17 to change the expanded width of the film forming material particles Mb. The period in which the current value is switched can be selected in accordance with the transport speed of the film formation object 11 or the movement time of the film formation material particles Mb from the evaporation source to the film formation object 11. Further, the current value supplied to the coil 9 is not limited to 20A and 30A, and may be a current value of another value.

Fig. 2 shows the magnetic field in the vicinity of the main hearth and the direction of the film-forming material particles Mb. Fig. 2(a) shows a case where a current of 20A is supplied to the coil 9, and Fig. 2(b) shows a case where a current of 30A is supplied to the coil 9. By increasing the current value flowing in the coil 9 and enhancing the magnetic field formed by the coil 9, the directivity of the film forming material particles Mb in the straight direction (X-axis direction) can be enhanced to reduce the expanded width of the film forming material particles Mb. On the other hand, the value of the current flowing in the coil 9 is lowered to weaken the magnetic field formed by the coil 9, whereby the directivity in the direction in which the film-forming material particles Mb travel can be weakened, and the expanded width of the film-forming material particles Mb can be enlarged.

The evaporation direction adjusting portion 21 controls the current values to be different from each other in the coil 9 of the adjacent ring hearth 6. For example, when the current value of the coil 9 of one ring hearth 6 is 20 A, the evaporation direction adjusting portion 21 sets the current value of the coil 9 of the other ring hearth 6 adjacent to one ring hearth 6 to 30A. Further, the evaporation direction adjusting unit 21 sets the timings of switching the current values to be the same so that the current values of the adjacent coils 9 become different.

Fig. 3 shows temporal changes in the expanded width of the film-forming material particles Mb. In FIG. 3, the case where there are three evaporation sources in the Z-axis direction is shown, and the state at the time of the passage is shown in the order of FIG. 3 (a) - FIG. 3 (c). In the state (first state) shown in Fig. 3 (a), the hearth coil power supply unit 22 causes a current of 20 A to flow in the coil 9 of the center ring furnace 6, and the current of 30 A is on the adjacent side. The coil 9 of the ring hearth 6 flows. At this time, the expanded width Wa of the film-forming material particles Mb at the center of 20 A is wider than the expanded width Wb of the film-forming material particles Mb at 30 A on the outer side.

Next, in the state (second state) shown in FIG. 3(b), the hearth coil power supply unit 22 causes the current of 30A to flow in the coil 9 of the center ring furnace 6, and the current of 20A is adjacent. The coil 9 of the ring cylinder 6 on the outer side flows. At this time, the expanded width Wb of the film-forming material particles Mb at the center of 30 A is narrower than the expanded width Wa of the film-forming material particles Mb at the time of 20 A on the outer side. Further, the state (first state) shown in FIG. 3(c) is the same as the state shown in FIG. 3(a), and thus the current value is periodically switched by repeating the first state and the second state, thereby The expanded width of the film-forming material particles Mb is changed.

Next, the action of the film forming apparatus 1 of the present embodiment will be described.

The film forming apparatus 1 performs film formation while conveying the film formation object 11. When the film formation is performed, the film forming apparatus 1 irradiates the plasma beam from the plasma source 7. P heats the film forming material Ma to evaporate. The film-forming material particles Mb evaporated from the film forming material Ma are expanded and diffused at a predetermined angle from the evaporation source. Since the hearth coil power supply unit 22 can periodically switch the current flowing in the coil 9, the magnetic field in the vicinity of the main hearth 17 is adjusted to change the direction of the film forming material particles Mb.

According to this film forming apparatus 1, the direction of the film formation material particles Mb evaporated from the evaporation source can be periodically changed to change the diffusion state. Since the activity of the film-forming material particles Mb differs depending on the film-forming material particles Mb, it is possible to disperse the film-forming material particles Mb having a high degree of activity by changing the diffusion state of the film-forming material particles Mb, thereby expanding the film quality. Good area. Thereby, variation in the position at which the film-forming material particles Mb having high activity are adhered can be suppressed to achieve uniformization of the film quality distribution.

The region where the film quality is good is, for example, a region where the resistance value of the transparent conductive film is low or a region where the transparency is high when the transparent conductive film is formed on the substrate as the film formation object. In the conventional film forming apparatus, for example, the resistance value range is within 5% of the reference value, and the film forming apparatus 1 can suppress the resistance value range within 3% of the reference value.

The film forming apparatus 1 has a plurality of evaporation sources, and can adjust the diffusion state of the film forming material particles Mb so that adjacent evaporation sources become different from each other. For example, in a region facing the film formation object 11 at a position corresponding to the center of the adjacent evaporation source, the film formation material particles Mb evaporated from one evaporation source can be evaporated, and then evaporated from another evaporation source. The film material particles Mb adhere to each other, and it is possible to suppress the variation in the position at which the film-forming material particles Mb having high activity adhere to each other, thereby achieving uniformization of the film quality distribution.

[Second embodiment]

The film forming apparatus of the second embodiment differs from the film forming apparatus 1 of the first embodiment described above in that the configuration of the evaporation direction adjusting unit 40 is different, and the configuration of the ring furnace 41 is mainly different. In addition, the same description as the first embodiment will be omitted. The evaporation direction adjustment unit 40 can periodically oscillate in the direction of the diffusion center of the film formation material particles Mb evaporated from the evaporation source. As shown in FIGS. 4 and 5, the ring hearth 41 is provided with an auxiliary coil 46 which is stacked on the annular permanent magnet 20. The auxiliary coil 46 has a pair of inner coils 42, 43 and an outer coil 44, 45. In addition, in FIG. 5(a), the outer casing 12 of the ring hearth 41 is abbreviate|omitted. The ring hearth 41 has a coil 9, a permanent magnet 20, and an auxiliary coil 46 in the outer casing 12.

The auxiliary coil 46 is disposed on a surface (a surface on one side of the film object) on the opposite side of the coil 9 of the permanent magnet 20 . When viewed from the axial direction of the ring hearth 41, the pair of inner coils 42, 43 are disposed on both sides in the Z-axis direction with the evaporation source. In FIGS. 4 and 5, the inner coil 42 is disposed on the left side, and the inner coil 43 is disposed on the right side. The inner coils 42 and 43 are planar coils that are substantially fan-shaped along the circumferential direction of the annular permanent magnet 20. The axial directions of the inner coils 42 and 43 are arranged along the X-axis direction.

When viewed from the axial direction of the ring hearth 41, the outer coils 44 and 45 are disposed on both sides of the pair of inner coils 42 and 43 so as to be adjacent to the evaporation source in the Z-axis direction. In FIGS. 4 and 5, the outer coil 44 is disposed on the left side, and the outer coil 45 is disposed on the right side. The outer coils 44 and 45 are planar coils that are substantially fan-shaped along the circumferential direction of the annular permanent magnet 20. Outer coil The axial directions of 44 and 45 are arranged along the X-axis direction.

Further, the evaporation direction adjusting unit 40 includes an auxiliary coil power supply unit 47 that supplies an alternating current to the auxiliary coil 46. The auxiliary coil power supply unit 47 supplies an alternating current to generate a magnetism in the opposite direction between the pair of inner coils 42, 43 and between the outer coils 44, 45.

For example, the upper side of the inner coil 42 (the object to be coated) is the N pole and the lower side is the S pole. When the upper side of the inner coil 43 is the S pole and the lower side is the N pole, the auxiliary coil power supply unit 47 supplies a current. The upper side of the outer coil 44 is set to the S pole, and the lower side is set to the N pole, and the upper side of the outer coil 45 is the N pole and the lower side is the S pole. At this time, the rightward magnetic field from the inner coil 42 to the inner coil 43 is formed by the pair of inner coils 42, 43, and the leftward magnetic field from the outer coil 45 to the outer coil 44 is formed by the outer coils 44, 45. Thereby, the magnetic field formed by the inner coils 42, 43 and the magnetic field formed by the outer coils 44, 45 cancel each other in the vicinity of the auxiliary coil 46 on the central axis CL of the ring hearth 41. Further, in the central axis CL of the ring hearth 41, the portion which is moved upward from the auxiliary coil 46 (in the X-axis direction) is greatly affected by the magnetic field formed by the outer coils 44 and 45, and thus the leftward direction is formed. magnetic field. Since the film-forming material particles Mb evaporated from the evaporation source are inclined to the left side from the X-axis direction, the direction of the diffusion center of the film-forming material particles Mb can be made to the left.

Further, the upper side of the inner coil 42 is the S pole and the lower side is the N pole. When the upper side of the inner coil 43 is the N pole and the lower side is the S pole, the auxiliary coil power supply unit 47 supplies a current so that the upper side of the outer coil 44 becomes The N pole and the lower side become the S pole, and the upper side of the outer coil 45 becomes the S pole and the lower side becomes It is N pole. At this time, the leftward magnetic field from the inner coil 43 to the inner coil 44 is formed by the pair of inner coils 42, 43, and the rightward magnetic field from the outer coil 44 to the outer coil 45 is formed by the outer coils 44, 45. Thereby, the magnetic field formed by the inner coils 42, 43 and the magnetic field formed by the outer coils 44, 45 cancel each other in the vicinity of the auxiliary coil 46 on the central axis CL of the ring hearth 41. Further, in the central axis CL of the ring hearth 41, the portion which is moved upward from the auxiliary coil 46 is greatly affected by the magnetic field formed by the outer coils 44 and 45, and thus a rightward magnetic field is formed. Since the film-forming material particles Mb evaporated from the evaporation source are inclined obliquely from the X-axis direction to the right side, the direction of the diffusion center of the film-forming material particles Mb can be made to the right.

FIG. 6 shows temporal changes in the direction of the diffusion center of the film forming material particles Mb. In Fig. 6, the case where there are three evaporation sources in the Z-axis direction is shown, and the state at the time of passage is shown in the order of Fig. 6 (a) to Fig. 6 (c). In the state shown in Fig. 6 (a), the direction of the diffusion center of the film-forming material particles Mb is directed to the left. Next, in the state shown in FIG. 6(b), the direction of the diffusion center of the film-forming material particles Mb is directed to the right. Further, in the state shown in FIG. 6(c), in the same state as the case shown in FIG. 6(a), the direction of the diffusion center of the film-forming material particles Mb is directed to the left. The evaporation direction adjustment unit 40 aligns the timing by setting the change phase to be the same so that the direction of the diffusion center of the film formation material particles Mb becomes the same in the adjacent plurality of evaporation sources. In this manner, the evaporation direction adjusting unit 40 can oscillate the direction of the diffusion center of the film forming material particles Mb to the left and right (Z-axis direction) by periodically switching the current supplied to the auxiliary coil 46.

In Fig. 7, the intensity H ₁ of the magnetic field formed on the central axis CL of the ring cylinder 41 by the pair of inner coils 42, 43 is shown, and the outer coils 44, 45 are formed on the central axis CL of the ring cylinder 41. The intensity H _{2 of the} upper magnetic field and the intensity H ₃ of the combined magnetic field formed on the central axis CL of the ring hearth 41. The intensity H ₃ of the combined magnetic field is the intensity obtained by combining the magnetic field strength H ₁ and the magnetic field strength H ₂ . The vertical axis shown in Fig. 7 indicates the distance from the auxiliary coil 46, and the horizontal axis indicates the intensity of the magnetic field in the Z-axis direction. In the state of Fig. 7, the magnetic field formed by the pair of inner coils 42, 43 is turned to the left, and the magnetic field formed by the outer coils 44, 45 is turned to the right.

For example, the peak intensity of the magnetic field formed by the pair of inner coils of 42,43 H ₁ H _1P of the evaporation source at a position spaced apart of 6cm, peak magnetic field intensity H ₂ H _2P is formed by a pair of outer coils 44 and 45 become the evaporation source 10cm apart. Comparing the magnetic field strengths H ₁ and H ₂ , the magnetic field formed by the pair of inner coils 42 and 43 acts on a portion close to the evaporation source, and the magnetic field formed by the outer coils 44 and 45 acts at a portion away from the evaporation source.

Also, the intensity H _{3 of the} combined magnetic field is almost zero near the evaporation source, becomes maximum at 15 cm from the evaporation source, and faces to the right. Thereby, in the vicinity of the evaporation source, the transverse magnetic field formed by the auxiliary coil 46 is almost zero, and the transverse magnetic field formed by the auxiliary coil 46 at a portion spaced apart from the evaporation source can be applied to the film forming material particles Mb. Further, the direction of the diffusion center of the film-forming material particles Mb evaporated from the evaporation source can be made to the right. In addition, the magnetic field intensity when the direction of the diffusion center is directed to the left is bilaterally symmetrical, and the description thereof is omitted.

According to the film forming apparatus of the second embodiment, the evaporation source is attached Recently, in order to eliminate the influence of the magnetic field formed by the outer coils 44, 45, a magnetic field formed by the pair of inner coils 42, 43 is formed at a position separated from the evaporation source by about 15 cm, and can be formed by an outer coil 44, 45. The magnetic field changes the direction of the diffusion center of the film-forming material particles Mb. By the evaporation direction adjustment unit 40, the direction of the diffusion center of the film formation material particles Mb is periodically oscillated to the left and right (in the width direction of the film formation object), whereby the deposition of the film formation material particles Mb having high activity can be suppressed. The deviation of the position is to achieve uniformization of the membrane distribution.

In a region opposed to the film formation target at a position corresponding to the center of the adjacent evaporation source, the film-forming material particles Mb can alternately arrive from the two evaporation sources, and the position at which the evaporating particles having high activity are adhered can be suppressed. Deviation to achieve homogenization of the membrane distribution.

Further, the magnetism generated by the outer coils 44, 45 can be set to about 2.5 times the magnetic force formed by the pair of inner coils 43, 44. Thereby, in the vicinity of the evaporation source, the transverse magnetic field formed by the auxiliary coil 46 is almost zero, and a magnetic field in the lateral direction (Z-axis direction) can be generated at a position near the hook-shaped magnetic field formed by the permanent magnet 20.

Further, the frequency of the alternating current supplied to the auxiliary coil 46 can be, for example, 10 Hz or more and 170 Hz or less. This frequency is appropriately selected depending on the transport speed of the film formation object. Further, if the frequency is too high, the magnetic force cannot be transmitted from the outer casing 12, and an appropriate magnetic field cannot be formed.

The present invention is not limited to the embodiments described above, and various modifications as described below can be made without departing from the spirit and scope of the invention.

For example, in the above embodiment, there are multiple evaporations The evaporation direction adjustment unit is provided in the film formation apparatus of the source, but the evaporation direction adjustment unit may be provided in the film formation apparatus provided with one evaporation source.

Further, in the above embodiment, the expanded width of the film-forming material particles is changed, or the direction of the diffusion center is changed, but the direction of the diffusion center may be changed while changing the expanded width.

Further, the evaporation direction adjusting unit 40 is configured to include a pair of inner coils and one outer coil, but may be configured to include only a pair of coils, for example. Further, the shape of the pair of auxiliary coils is not limited to a sector shape, and may be other shapes such as a circle or a rectangle.

Further, the evaporation direction adjusting portion 40 changes the direction of the diffusion center of the film forming material particles in the horizontal direction, for example, but the direction of the diffusion center may be changed in the other direction. For example, the direction of the diffusion center can be changed to rotate in the circumferential direction of the magnet 30 when viewed from the X-axis direction.

1‧‧‧ film forming device

2‧‧‧ evaporation source

3‧‧‧Transportation agency

6‧‧‧ ring furnace

7‧‧‧ Plasma source

8‧‧‧ Pressure adjustment device

9‧‧‧ coil

10‧‧‧vacuum chamber

10a‧‧‧Transport room

10b‧‧‧filming room

10c‧‧‧Electric pulp port

11‧‧‧ Film formation object

12‧‧‧ Container

15‧‧‧Transport roller

16‧‧‧ Film-forming object holding member

17‧‧‧Main hearth

17a‧‧‧Filling Department

17b‧‧‧Flange

17c‧‧‧through holes

20‧‧‧ permanent magnet

21‧‧‧Evaporation direction adjustment department

22‧‧‧ Hearth coil power supply department

Ma‧‧‧film forming materials

Mb‧‧‧ film-forming material particles

P‧‧‧plasma beam

A‧‧‧Transfer direction

Claims (7)

A film forming apparatus which evaporates a film forming material by a plasma beam in a vacuum chamber, and causes evaporating particles of the film forming material to adhere to a film forming object; and is characterized by: a plasma source a plasma beam is generated in the vacuum chamber; a main furnace is used as a main anode, and the film forming material serving as an evaporation source is filled, and the plasma beam is introduced into the film forming material or introduced into the plasma. a ring furnace, which is disposed as an auxiliary anode, disposed around the main hearth, and guides the plasma beam; and an evaporation direction adjusting portion that changes the evaporation particles evaporated from the evaporation source at regular intervals direction. The film forming apparatus according to claim 1, wherein the evaporation direction adjusting unit adjusts an expanded width of the evaporated particles evaporated from the evaporation source. The film forming apparatus of claim 2, wherein the plurality of sets of the plasma source, the main hearth, and the ring hearth are provided; and the evaporation direction adjusting unit periodically adjusts the expanded width so as to be adjacent to the evaporation source The change in the aforementioned extended width is shifted in phase. The film forming apparatus according to claim 1, wherein the evaporation direction adjusting unit adjusts a direction of a diffusion center of the evaporated particles evaporated from the evaporation source. The film forming apparatus of claim 4, wherein the plurality of sets of the plasma source, the main hearth, and the ring hearth are provided; The evaporation direction adjustment unit periodically changes the direction of the diffusion center so that the phase of the change in the direction of the diffusion center among the adjacent evaporation sources is the same. The film forming apparatus of claim 4 or 5, wherein the evaporation direction adjusting portion has: an auxiliary coil superposed on a magnet of the ring hearth; and the diffusion center is changed by changing a magnetic field formed by the auxiliary coil The direction. The film forming apparatus according to claim 6, wherein the auxiliary coil includes: a pair of inner coils, which are disposed on both sides of the evaporation source when viewed from an axial direction of the ring hearth; and an outer coil And disposed on an outer side of the pair of inner coils; a direction of a magnetic field formed by the pair of inner coils and a direction of a magnetic field formed by the outer coil are opposite directions.