TWI878293B - Film forming device - Google Patents

Abstract

[Topic] A film forming device capable of delaying the growth of a deposit is provided. [Solution] The film forming device (1) has a power source (50) for supplying power to the coil (6a) of the annular furnace (6). The power source (50) changes the magnetic flux density above the main furnace (21). In this way, by changing the area where the magnetic flux density is zero, the position of the diffused film forming material concentrated and attached to the main furnace (21) and the annular furnace (6) can be changed. The deposit thus formed grows more slowly than the deposit formed by concentrating the film forming material in a narrow range. In this way, the growth of the deposit can be delayed.

Description

Film forming device

The present invention relates to a film forming device. This application claims priority based on Japanese Patent Application No. 2019-093049 filed on May 16, 2019. The entire contents of the Japanese application are incorporated by reference in this specification.

As a film-forming device for forming a film on the surface of a film-forming object, there is a device using an ion plating method, for example. In the ion plating method, particles of evaporated film-forming material are diffused in a vacuum chamber and attached to the surface of the film-forming object. Such a film-forming device includes: a plasma source, which is arranged on the side wall of a vacuum container and is used to generate a plasma beam; a steering coil, which guides the plasma beam generated by the plasma source into the vacuum container; a main furnace, which is a main anode that holds the film-forming material; and a ring furnace, which is an auxiliary anode surrounding the main furnace (for example, see patent document 1). [Prior art document]

[Patent Document 1] Japanese Patent Application Laid-Open No. 9-256147

Here, in the film forming apparatus as described above, sometimes part of the diffused film forming material stays near the film forming material and accumulates around the main furnace and the ring furnace. If such an accumulation grows, it is possible to affect the uniformity of the film formed on the surface of the film forming object. Moreover, if the accumulation amount increases and the main furnace and the ring furnace are short-circuited with each other, it is possible to hinder the implementation of film formation. Therefore, it is necessary to remove the accumulation, but in order to reduce such removal work, it is required to delay the growth of the accumulation.

[The problem the invention is trying to solve]

Therefore, the purpose of the present invention is to provide a film-forming device capable of delaying the growth of deposits. [Technical means for solving the problem]

The film-forming device of the present invention heats the film-forming material by a plasma beam so that particles vaporized from the film-forming material adhere to the film-forming object, and comprises: a main anode filled with the film-forming material and guiding the plasma beam to the film-forming material; an auxiliary anode having a permanent magnet and an electromagnet, arranged around the main anode and inducing the plasma beam; and a power source, which supplies power to the electromagnet of the auxiliary anode, and the power source changes the magnetic flux density above the main anode.

The film forming device is equipped with a power source for supplying electric power to the electromagnetic body of the auxiliary anode. The power source changes the magnetic flux density above the main anode. In this way, when the magnetic flux density is changed, the position of the diffused film forming material attached to the main anode and the auxiliary anode can be changed. The deposit formed in this way grows slower than the deposit formed by concentrating the film forming material in a narrow range. In this way, the growth of the deposit can be delayed.

A power source can easily change the magnetic flux density by superimposing an alternating current on an electromagnetic body. A power source can easily change the magnetic flux density by superimposing an alternating current on an electromagnetic body.

The change of magnetic flux density can be a change of the area where the magnetic flux density is zero. In this way, when the area where the magnetic flux density is zero is changed, the position where the diffused film-forming material is concentrated and attached to the main anode and the auxiliary anode can be changed. The pile formed in this way grows slower than the pile formed by concentrating the film-forming material in a narrow range. In this way, the growth of the pile can be delayed.

In a film forming device, a power source changes the magnetic flux density by superimposing an alternating current on an electromagnet. When the amplitude of the formation position of the deposit of the film forming material that changes by superimposing the alternating current is set to a and the thickness of the deposit when the alternating current is not superimposed on the electromagnet is set to σ, the power source can superimpose the alternating current on the electromagnet under the condition that a/σ is greater than 2. Alternatively, the power source can superimpose the alternating current on the electromagnet under the condition that a/σ is greater than 4. In this case, the film forming material can be diffused with an amplitude a that is wider than the thickness σ of the deposit. Therefore, the growth of the deposit can be delayed. [Effect of the invention]

According to the present invention, a film forming device capable of delaying the growth of a deposit can be provided.

Hereinafter, an embodiment of a film forming device according to the present invention will be described in detail with reference to the drawings. In the description of the drawings, the same elements are marked with the same symbols, and repeated descriptions are omitted.

The film forming apparatus 1 of the first embodiment shown in FIG. 1 is an ion plating apparatus used in the so-called ion plating method. In addition, for the convenience of explanation, FIG. 1 shows an XYZ coordinate system. The Y-axis direction is the direction in which the film forming object described later is transported. The X-axis direction is the direction in which the film forming object and the furnace mechanism described later are opposite. The Z-axis direction is a direction orthogonal to the X-axis direction and the Y-axis direction.

The film forming apparatus 1 is a so-called vertical film forming apparatus in which the film forming object 11 is arranged in a vacuum chamber 10 and transported in a state where the film forming object 11 is upright or tilted from an upright state in such a manner that the thickness direction of the film forming object 11 becomes a horizontal direction (X-axis direction in FIG. 1 ). At this time, the X-axis direction is a horizontal direction and the thickness direction of the film forming object 11, the Y-axis direction is a horizontal direction, and the Z-axis direction is a vertical direction. On the other hand, in one embodiment of the film forming apparatus based on the present invention, a so-called horizontal film forming apparatus can be used in which the film forming object is arranged in a vacuum chamber and transported in such a manner that the thickness direction of the film forming object becomes approximately a vertical direction. At this time, the Z-axis and Y-axis directions are horizontal directions, and the X-axis direction is a vertical direction and the thickness direction. In the following embodiments, a vertical case is used as an example to describe an embodiment of the film forming apparatus of the present invention.

The film forming device 1 includes a furnace mechanism 2, a conveying mechanism 3, an annular furnace 6, a steering coil 5, a plasma source 7, a pressure regulating device 8, a power source 50 and a vacuum chamber 10.

The vacuum chamber 10 has: a transport chamber 10a for transporting a film-forming object 11 for forming a film of a film-forming material; a film-forming chamber 10b for diffusing the film-forming material Ma; and a plasma port 10c for receiving a plasma beam P irradiated from a plasma source 7 into the vacuum chamber 10. The transport chamber 10a, the film-forming chamber 10b, and the plasma port 10c are connected to each other. The transport chamber 10a is set along a predetermined transport direction (arrow D1 in the figure) (along the Y axis). In addition, the vacuum chamber 10 is made of a conductive material and is connected to a ground potential.

The conveying mechanism 3 conveys the holding member 16 holding the film-forming object 11 in a state opposite to the film-forming material Ma along the conveying direction D1. For example, the holding member 16 is a frame that holds the outer periphery of the film-forming object. The conveying mechanism 3 is composed of a plurality of conveying rollers 15 arranged in the conveying chamber 10a. The conveying rollers 15 are arranged at equal intervals along the conveying direction D1, support the holding member 16, and convey along the conveying direction D1. In addition, the film-forming object 11 uses a plate-shaped member such as a glass substrate or a plastic substrate.

The plasma source 7 is a pressure gradient type, and its main body is connected to the film forming chamber 10b via a plasma port 10c provided on the side wall of the film forming chamber 10b. The plasma source 7 generates a plasma beam P in the vacuum chamber 10. The plasma beam P generated in the plasma source 7 is ejected from the plasma port 10c into the film forming chamber 10b. The ejection direction of the plasma beam P is controlled by a steering coil 5 provided in a manner surrounding the plasma port 10c. The steering coil 5 generates a magnetic field in the Y-axis direction and guides the plasma beam generated by the plasma source 7 to the center of the vacuum container.

The pressure regulating device 8 is connected to the vacuum chamber 10 and regulates the pressure in the vacuum chamber 10. The pressure regulating device 8 includes a pressure reducing unit such as a turbomolecular pump or a cryogenic pump and a pressure measuring unit for measuring the pressure in the vacuum chamber 10, for example.

The furnace mechanism 2 is a mechanism for holding the film-forming material Ma. The furnace mechanism 2 is disposed in the film-forming chamber 10b of the vacuum chamber 10 and is arranged in the negative direction of the X-axis direction when viewed from the conveying mechanism 3. The furnace mechanism 2 has a main furnace 21 that serves as a main anode for guiding the plasma beam P emitted from the plasma source 7 to the film-forming material Ma or a main anode for guiding the plasma beam P emitted from the plasma source 7.

As shown in FIG2 , the main furnace 21 has a cylindrical filling portion 21a extending in the positive direction of the Z-axis direction and filled with the film-forming material Ma, and a flange portion 21b protruding from the filling portion 21a. The main furnace 21 is maintained at a positive potential relative to the ground potential of the vacuum chamber 10, thereby attracting the plasma beam P (see FIG1 ). A through hole 21c for filling the film-forming material Ma is formed in the filling portion 21a of the main furnace 21 into which the plasma beam P is incident. Moreover, the top end portion of the film-forming material Ma is exposed to the film-forming chamber 10b at one end of the through hole 21c.

The annular furnace 6 has an auxiliary anode of an electromagnetic body for inducing the plasma beam P. The annular furnace 6 is arranged around the filling part 21a of the main furnace 21 that holds the film-forming material Ma. The annular furnace 6 has a coil 6a (electromagnet), a permanent magnet 6b and an annular container 6c, and the coil 6a and the permanent magnet 6b are accommodated in the annular container 6c. The annular furnace 6 controls the direction of the plasma beam P incident on the film-forming material Ma or the direction of the plasma beam P incident on the main furnace 21 according to the magnitude of the current flowing through the coil 6a.

The film-forming material Ma can be exemplified by transparent conductive materials such as ITO or ZnO. When the film-forming material Ma is composed of a conductive substance, if the main furnace 21 is irradiated with a plasma beam P, the plasma beam P directly enters the film-forming material Ma, and the top portion of the film-forming material Ma is heated and vaporized, and the film-forming material particles Mb ionized by the plasma beam P diffuse into the film-forming chamber 10b. The film-forming material particles Mb diffused into the film-forming chamber 10b move upward (in the positive direction of the Z axis) of the film-forming chamber 10b and adhere to the surface of the film-forming object 11 in the conveying chamber 10a. In addition, the film-forming material Ma is a solid object formed into a cylindrical shape of a specified length, and a plurality of film-forming materials Ma are filled in the furnace mechanism 2 at one time. Moreover, according to the consumption of the film-forming material Ma, the film-forming material Ma is sequentially extruded from the bottom of the furnace mechanism 2 so that the top end portion of the uppermost film-forming material Ma maintains a prescribed positional relationship with the upper end of the main furnace 21.

The furnace mechanism 2 further includes an outer rim 28 disposed around the main furnace 21. The outer rim 28 prevents the main furnace 21 and the annular furnace 6 from being short-circuited due to the deposition of the film forming material Ma around the main furnace 21 during film deposition.

The outer rim 28 is a cylindrical bottomed container. The outer rim 28 has a side wall portion 28b surrounding the filling portion 21a of the main furnace 21 and a bottom portion 28c at the end of the side wall portion 28b provided on the flange portion 21b side of the main furnace 21. A circular opening 28a is formed at the bottom 28c of the outer rim 28 through which the filling portion 21a of the main furnace 21 is inserted. Furthermore, the upper portion of the side wall portion 28b of the outer rim 28 is gradually curved toward the side of the outer rim 28 and is open toward the film forming chamber 10b side.

The power source 50 is a device for supplying power to the coil 6a of the annular hearth 6. The power source 50 changes the magnetic flux density above the main hearth 21. Specifically, the power source 50 changes the magnetic flux density by superimposing an alternating current on the coil 6a. In the present embodiment, the change in magnetic flux density is to change the area above the main hearth 21 where the magnetic flux density is zero. The current from the power source 50 describes a sine wave (see FIG. 5(b)). The power source 50 sets the frequency, the current value at the center (offset), and the amplitude (the magnitude of the current that changes to the positive and negative sides relative to the current value at the center).

The power source 50 superimposes an alternating current on the coil 6a under the condition that a/σ is greater than 2. It is more preferable that the power source 50 superimposes an alternating current on the coil 6a under the condition that a/σ is greater than 4. Here, "a" refers to the amplitude of the formation position of the deposit of the film-forming material that changes due to the superposition of the alternating current. The detailed description of the amplitude a will be described later. "σ" refers to the thickness of the deposit when no alternating current is superimposed on the coil 6a.

In FIG. 2 , it is easy to form a pile A at the curved portion near the upper end of the outer rim 28. Also, it is easy to form a pile B at the bottom 28c. Also, it is easy to form a pile C at the top end of the main furnace bed 21. Among them, the piles A and B grow in a manner that extends greatly at specific locations. When the power source 50 does not superimpose an alternating current, the piles A and B extend in a manner that has a prescribed thickness. At this time, the thickness of the extended portion of the piles A and B is "σ". The thickness σ can be obtained by actually measuring while the piles A and B are being formed at a stage before setting the conditions for the alternating power of the power source 50, such as when the film forming device 1 is introduced or manufactured.

Next, the condition of "a/σ" is described in further detail with reference to Figs. 3 to 7. The magnetic field distribution near the main furnace 21 is described with reference to Fig. 3. Fig. 3 shows the magnetic field distribution in a state where the plasma beam emitted from the plasma source 7 is guided to the main furnace 21 by the annular furnace 6. The arrows in the figure indicate the direction of the magnetic lines of force. The magnetic field near the main furnace 21 is affected by the magnetic field generated by the annular furnace 6, the magnetic field generated by the steering coil 5, and the magnetic field generated by the self-induction of the plasma beam P. A region where the magnetic flux density is 0 is formed by these influences. In addition, as shown in FIG3 , in the structure of the film forming apparatus 1 of the present embodiment, the magnetic field is distributed asymmetrically with respect to the central axis CL of the annular furnace bed 6. Therefore, the position where the magnetic flux density is 0 is formed at a position deviated from the central axis CL. However, in the simulation experiment for setting the condition of "a/σ", it is assumed that the plasma beam P is not eccentric and the magnetic field is distributed symmetrically with respect to the central axis CL, and the calculation is performed. At this time, the regions E1 and E2 where the magnetic flux density is 0 exist on the central axis CL above the main furnace bed 21.

When the current supplied to the coil 6a of the annular furnace 6 (hereinafter, sometimes referred to as the furnace coil current) is set to a specified value, if the area where the magnetic flux density is 0 is set as "area E1", and the furnace coil current is increased, the area where the magnetic flux density is 0 moves to "area E2" at a position higher than area E1. Each time the value of the furnace coil current is increased, the area with high magnetic flux density expands in the upward direction. It can be inferred that if the furnace coil current is increased, the position of the area where the magnetic flux density is 0 moves upward, and therefore the flow of the plasma beam P also moves upward. Therefore, when the power source 50 superimposes an alternating current, the magnetic field distribution changes repeatedly, and the area where the magnetic flux density is 0 changes in a manner of reciprocating in the up and down directions.

As with the change in magnetic field distribution described above, the potential distribution also changes with the change in the furnace coil current. As the potential distribution changes, the ion scattering pattern changes, and the position or speed of the deposits A and B changes.

For example, as shown in FIG2 , the formation positions when the piles A and B are formed with a predetermined furnace coil current without superimposing an alternating current are set as “PA” and “PB”. When an axis extending along the extending direction of the piles A and B and passing through the peak positions of the piles A and B is set, the formation positions PA and PB are set at the intersection of the axis and the formation surface of the piles A and B (the surface of the outer rim 28 in FIG2 ). At this time, when the furnace coil current is low, the formation position PA1 is set at a position far from the main furnace 21, and when the furnace coil current is high, the formation position PA2 is set at a position close to the main furnace 21. Furthermore, when the furnace coil current is low, the forming position PB1 is set at a position close to the main furnace 21, and when the furnace coil current is high, the forming position PB2 is set at a position far from the main furnace 21. FIG. 4 shows the relationship between the furnace coil current and the variation of the accumulations A, B, and C. The results shown in FIG. 4 are obtained by simulation experiments. Here, a DC furnace coil current of a specified current value flows through the coil 6a without superimposing an AC current. The horizontal axis represents the magnitude of the furnace coil current, and the vertical axis represents the distance from the reference position to the forming position of the accumulations A, B, and C. In addition, in FIG. 4 , the formation positions of the respective deposits A, B, and C when the furnace coil current is set to 0 A are reference positions.

As described above, the formation positions PA and PB of the deposits A and B change with the change of the furnace coil current. Therefore, when the power source 50 superimposes the AC current, as the furnace coil current changes periodically in a manner of describing a sine wave (see FIG. 5(b)), the formation positions PA and PB of the deposits A and B also change periodically. As shown in FIG. 5(b), the furnace coil current describes a sine wave with the current value C1 as the center value, the current value C2 as the maximum value, and the current value C3 as the minimum value. The growth model of the deposits A and B at this time is shown in FIG. 5(a). The horizontal axis represents the position of the formation positions PA and PB, and the vertical axis represents the flux intensity. Flux intensity is a parameter that indicates the amount (height) of film-forming material particles attached at a certain position. In addition, the peak position of the flux intensity is the formation position PA, PB of the deposits A, B. The distribution of flux intensity when the furnace coil current is the current value C1 is shown by curve G1, the distribution of flux intensity when the furnace coil current is the current value C2 is shown by curve G2, and the distribution of flux intensity when the furnace coil current is the current value C3 is shown by curve G3. In this way, the variation amplitude 2a of the formation positions PA, PB of the deposits A, B is represented by the distance between the peak position of curve G2 and the peak position of curve G3. At this time, the amplitude a of the formation positions PA, PB of the deposits A, B is defined by half the size of the variation amplitude 2a. For example, when AC current is not superimposed, the film-forming material is concentrated at one formation position PA, PB, so the growth of the deposits A, B becomes faster. In contrast, when AC current is superimposed, as shown in FIG5(a), the position where the film-forming material is attached changes periodically within the range of the variation amplitude 2a. Therefore, the film-forming material is dispersed, so that the growth of the deposits A, B can be delayed (extended in the extension direction).

FIG6 is a graph in which the values of the formation positions PA and PB of the deposit A and the deposit B are extracted and plotted in the curve graph of FIG4. By setting any furnace coil current in the curve graph as the center value and setting the amplitude of the AC current, the variation range 2a is determined, thereby determining the amplitude a. For example, if the center value of the furnace coil current is set to 20A and the amplitude is set to 10A, the distance between the formation position PA in 30A and the formation position PA in 10A becomes the variation range 2a when the deposit A is formed. Moreover, the value of half of the variation range 2a becomes the amplitude a (=10mm). Moreover, the distance between the formation position PB in 30A and the formation position PB in 10A becomes the variation range 2a when the deposit B is formed. Moreover, the value of half of the variation amplitude 2a becomes the amplitude a (=3.5mm). Here, the amplitude a can be expressed as "a/σ" as a standard value by dividing by the thickness σ of the stacks A and B. The thickness σ of the stack A is actually measured to be 5mm, and the thickness σ of the stack B is actually measured to be 1mm. Therefore, when the center value of the furnace coil current is set to 20A and the amplitude is set to 10A, the standard value "a/σ" of the stack A becomes 2, and the standard value "a/σ" of the stack B becomes 3.5. In this way, by referring to the standard value "a/σ", it is possible to compare the amplitude a of the area where the ion flux is concentrated relative to the expansion of the ion flux (thickness σ).

FIG7 shows the relationship between the time average value of the flux intensity at any position around the main furnace 21 and the standard value "a/σ". The horizontal axis of FIG7 represents the standard value "a/σ", and the vertical axis represents the standard value of the time average value of the flux intensity. The standard value of the time average value of the flux intensity is a value indicating the magnitude relative to the standard value (=1) when the standard value "a/σ=1" is used as the reference value. As shown in FIG7, it can be understood that as the standard value "a/σ" increases, the flux intensity attached to any place decreases. In particular, the flux intensity can be drastically reduced in the period before the standard value "a/σ" becomes 2. Therefore, it can be understood that it is better for the power source 50 to superimpose an alternating current on the coil 6a under the condition that a/σ is 2 or more. Furthermore, the flux intensity can be reduced rapidly before the standard value "a/σ" reaches 4. Therefore, it can be understood that it is better for the power source 50 to superimpose an alternating current on the coil 6a under the condition that a/σ is 4 or more.

In addition, there is no particular limitation on how the power source 50 sets the frequency, the center current value, and the amplitude in order to set the standard value "a/σ" to the above-mentioned condition. As an example, the frequency can be set in the range of 10 to 100 Hz. Within this range, energy loss due to heat loss of the copper plate caused by excessively high frequency can be suppressed, and layer structure formation on the film caused by excessively low frequency can be suppressed. In addition, the center current value only needs to be set in the range of 20 to 40A. In addition, the amplitude only needs to be set in the range of 2 to 20A.

Next, the functions and effects of the film-forming apparatus 1 of this embodiment will be described.

The film-forming device 1 of this embodiment heats the film-forming material Ma by means of a plasma beam P, so that particles vaporized from the film-forming material Ma adhere to a film-forming object 11. The film-forming device 1 comprises: a main furnace bed 21 as a main anode, which is filled with the film-forming material Ma and guides the plasma beam P to the film-forming material Ma; an annular furnace bed 6 as an auxiliary anode, which has a permanent magnet 6b and a coil 6a, which are arranged around the main furnace bed 21 and induce the plasma beam P; and a power source 50, which supplies power to the coil 6a of the annular furnace bed 6 and changes the magnetic flux density above the main furnace bed 21.

The film forming device 1 changes the magnetic flux density above the main furnace bed 21. In this way, when the magnetic flux density is changed, the position where the diffused film forming material is concentrated and attached to the main furnace bed 21 and the surrounding of the ring furnace bed 6 can be changed. The pile formed in this way grows slower than the pile formed by concentrating the film forming material in a narrow range. In this way, the growth of the pile can be delayed.

The power supply 50 can change the magnetic flux density by superimposing an alternating current on the coil 6a. The power supply 50 can easily change the magnetic flux density by superimposing an alternating current on the coil 6a.

The change of magnetic flux density can be a change of the area where the magnetic flux density is 0. In this way, when the area where the magnetic flux density is 0 is changed, the position where the diffused film-forming material is concentrated and attached to the main furnace bed 21 and the ring furnace bed 6 can be changed. The pile formed in this way grows slower than the pile formed by concentrating the film-forming material in a narrow range. In this way, the growth of the pile can be delayed.

In the film forming device 1, the power source 50 changes the magnetic flux density by superimposing an alternating current on the coil a. When the amplitude of the formation position of the deposit of the film forming material that changes by superimposing the alternating current is set to a, and the thickness of the deposit when the alternating current is not superimposed on the coil 6a is set to σ, the power source 50 can superimpose the alternating current on the coil 6a under the condition that a/σ is greater than 2. Alternatively, the power source 50 can superimpose the alternating current on the coil 6a under the condition that a/σ is greater than 4. In this case, the film forming material can be diffused with an amplitude a that is wider than the thickness σ of the deposit. Therefore, the growth of the deposit can be delayed.

The present invention is not limited to the above-mentioned embodiments, and various modifications as described below can be made without departing from the spirit of the present invention.

In the above-mentioned embodiment, a film forming apparatus based on ion plating method is exemplified. Alternatively, the present invention can be applied to any film forming apparatus as long as it is a type of apparatus that has an evaporation source fixed thereto, such as a general plasma evaporation apparatus, a dust plasma apparatus, or a plasma apparatus.

In the above-mentioned embodiment, the power source changes the region where the magnetic flux density is zero above the main anode by superimposing an alternating current on the electromagnetic body. However, the method for changing the region where the magnetic flux density is zero is not particularly limited.

For example, the power supply can finely switch the value of the DC current. For example, the power supply can form a waveform similar to FIG. 5(b) by finely switching the DC current. In addition, when the annular furnace is set so that the magnet faces the direction described in the above embodiment (that is, the current of the coil is 0), a point where the magnetic flux density is 0 is formed, so the flow of the current can also be appropriately changed.

Furthermore, in the above-mentioned embodiment, the power source changes the area where the accumulation is generated by changing the area where the magnetic flux density is 0, thereby delaying the growth of the accumulation. However, the power source can change the area where the accumulation is generated by changing the magnetic flux density, and is not limited to the method of changing the area where the magnetic flux density is 0.

For example, in addition to the coil 6a of the above-mentioned embodiment, other coils may be added to change the magnetic flux density at the location where the accumulation is generated by turning the current on/off or changing the current value. Alternatively, the magnetic flux density at the location where the accumulation is generated may be changed by disposing a permanent magnet and moving its position.

1: Film forming device 6: Ring furnace 6a: Coil (electromagnet) 6b: Permanent magnet 7: Plasma source 11: Film forming object 21: Main furnace 50: Power source

[Fig. 1] is a cross-sectional view showing the structure of a film forming apparatus according to an embodiment of the present invention. [Fig. 2] is an enlarged view showing the structure near the main furnace. [Fig. 3] is a schematic diagram showing the magnetic field near the main furnace. [Fig. 4] shows the relationship between the furnace coil current and the variation of the deposits A, B, and C. [Fig. 5] (a) is a diagram showing the growth model of the deposits A and B, and (b) is a diagram showing the waveform of the alternating current. [Fig. 6] is a graph in which the values of the formation positions PA and PB of the deposits A and B are extracted and plotted in the graph of Fig. 4. [Fig. 7] is a graph showing the relationship between the time average value of the flux intensity at any position around the main furnace and the standard value "a/σ".

2: Furnace mechanism

6: Ring furnace bed

6a: Coil

6b: Permanent magnet

6c:Container

21: Main hearth bed

21a: Filling part

21b: flange

21c: Through hole

28: Outer rim

28b: Side wall

28c: bottom

50: Power supply

A,B,C: Accumulation

Ma: Film-forming material

PA,PA1,PA2,PB,PB1,PB2: formation position

X,Y,Z: axis direction

σ: thickness

Claims (5)

A film-forming device, which heats a film-forming material by a plasma beam so that particles vaporized from the film-forming material adhere to a film-forming object, comprises: a main anode filled with the film-forming material and guiding the plasma beam to the film-forming material; an auxiliary anode having a permanent magnet and an electromagnet, arranged around the main anode and inducing the plasma beam; and a power source for supplying power to the electromagnet of the auxiliary anode, the power source is configured to change the magnetic flux density above the main anode so that the position where the film-forming material is concentrated and adhered to around the main anode and the auxiliary anode changes with time. A film forming device as described in claim 1, wherein the power source changes the magnetic flux density by superimposing an alternating current on the electromagnetic body. The film forming device as described in claim 1 or claim 2, wherein: the plasma beam is supplied by a plasma source; the change in magnetic flux density is a change in the region where the magnetic flux density is zero between the main anode and the auxiliary anode and the plasma source. A film forming device as described in claim 2 or claim 3, wherein the power source changes the magnetic flux density by superimposing an alternating current on the electromagnet, when the amplitude of the formation position of the deposit of the film forming material before the change caused by the superimposition of the alternating current is set to a, and the thickness of the deposit when the alternating current is not superimposed on the electromagnet is set to σ, the power source superimposes the alternating current on the electromagnet under the condition that a/σ is greater than 2. A film forming apparatus as described in claim 4, wherein the power source superimposes an alternating current on the electromagnetic body under the condition that a/σ is greater than 4.

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