TWI515711B - Pixel structure - Google Patents
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Description
本發明是有關於一種平面顯示技術,且特別是有關於一種畫素結構。 The present invention relates to a flat display technology, and more particularly to a pixel structure.
發光二極體(light emitting diode,LED)由於具有省電、使用壽命長、啟動快速、體積小…等多種優點,因此近年來被廣泛的應用在平面顯示器中。其中,有機發光二極體(organic light emitting diode,OLED)又因為高亮度、高對比、自發光、無視角限制、無需背光結構與彩色濾光片結構等優點,在目前已逐漸成為平面顯示器中最具有發展潛力的一種技術。 Light emitting diodes (LEDs) have been widely used in flat panel displays in recent years due to their advantages of power saving, long service life, fast startup, and small size. Among them, the organic light emitting diode (OLED) has become a flat display in the past because of its advantages of high brightness, high contrast, self-luminescence, no viewing angle limitation, no backlight structure and color filter structure. One of the most promising technologies.
OLED顯示器又可分為主動式矩陣(active matrix,AM)OLED顯示器以及被動式矩陣(passive matrix,PM)OLED顯示器。AMOLED顯示器與PMOLED顯示器相比,具有使用壽命較長以及耗電量較小等優點,因此常應用於大尺寸的面板。圖1為傳統AMOLED顯示器的畫素結構100的電路圖。畫素結構100包括電晶體M1、電晶體M2、電容C1以及有機發光二極體D1。有機發光二極體D1一端耦接電晶體M1,另一端耦接電壓V2。電晶體M1接收電壓V1用以驅動OLED D1。 資料信號DATA與掃描信號SCAN則藉由電晶體M2的導通或斷開而提供至畫素結構100。 The OLED display can be further divided into an active matrix (AM) OLED display and a passive matrix (PM) OLED display. Compared with PMOLED displays, AMOLED displays have the advantages of long life and low power consumption, so they are often used in large-sized panels. 1 is a circuit diagram of a pixel structure 100 of a conventional AMOLED display. The pixel structure 100 includes a transistor M1, a transistor M2, a capacitor C1, and an organic light-emitting diode D1. The organic light emitting diode D1 is coupled to the transistor M1 at one end and to the voltage V2 at the other end. The transistor M1 receives the voltage V1 for driving the OLED D1. The data signal DATA and the scan signal SCAN are supplied to the pixel structure 100 by the turn-on or turn-off of the transistor M2.
AMOLED顯示器中各畫素結構100的電壓V1是相互連接的,當畫素結構100驅動發光時,電壓V1上會有電流流過。由於電壓V1導線上具有阻抗,所以電流流經電壓V1導線時會產生壓降,造成各畫素結構100之間會存在電流差異。由此可知,流經各OLED D1的電流也不同。另一方面,受到製程的影響,各畫素結構100中電晶體M1的臨界電壓(threshold voltage)也會有所差異。因此,即使在各畫素結構100中都施加相同的資料信號DATA,流經各OLED D1的電流也會不同,因此造成AMOLED顯示器容易產生亮度不均勻的現象。 The voltage V1 of each pixel structure 100 in the AMOLED display is connected to each other. When the pixel structure 100 drives the light, a current flows through the voltage V1. Since the voltage V1 has an impedance on the wire, a voltage drop occurs when the current flows through the voltage V1 wire, causing a current difference between the pixel structures 100. It can be seen that the current flowing through each of the OLEDs D1 is also different. On the other hand, due to the influence of the process, the threshold voltage of the transistor M1 in each pixel structure 100 may also differ. Therefore, even if the same data signal DATA is applied to each of the pixel structures 100, the current flowing through each of the OLEDs D1 is different, thereby causing the AMOLED display to easily cause uneven brightness.
本發明提供一種畫素結構,可改善顯示面板亮度不均勻的問題。 The invention provides a pixel structure, which can improve the problem of uneven brightness of the display panel.
本發明的畫素結構,用以驅動發光二極體。畫素結構包括驅動電晶體、偏壓電壓產生器、初始化開關、第一掃描開關、第二掃描開關以及耦合開關。驅動電晶體具有第一端、第二端以及控制端,驅動電晶體的第二端耦接至發光二極體,驅動電晶體的第一端接收第一參考操作電壓,驅動電晶體的控制端接收偏壓電壓。偏壓電壓產生器耦接驅動電晶體,依據第一參考電壓、第二參考電壓、第一參考操作電壓以及顯示資料以產生偏壓電壓。初始化開關耦接在偏壓電壓產生器與第一參考電壓間,依據初始 控制信號以導通或斷開。第一掃描開關耦接在偏壓電壓產生器與第二參考電壓間,依據前級掃描信號以導通或斷開。第二掃描開關接收顯示資料及目前掃描信號,依據目前掃描信號以導通或斷開。耦合開關耦接在偏壓電壓產生器以及驅動電晶體的第一端間,依據耦合控制信號以導通或斷開。 The pixel structure of the present invention is used to drive a light emitting diode. The pixel structure includes a driving transistor, a bias voltage generator, an initialization switch, a first scan switch, a second scan switch, and a coupling switch. The driving transistor has a first end, a second end, and a control end. The second end of the driving transistor is coupled to the LED, and the first end of the driving transistor receives the first reference operating voltage, and drives the control end of the transistor. Receive bias voltage. The bias voltage generator is coupled to the driving transistor, and generates a bias voltage according to the first reference voltage, the second reference voltage, the first reference operating voltage, and the display data. The initialization switch is coupled between the bias voltage generator and the first reference voltage, according to an initial The control signal is turned on or off. The first scan switch is coupled between the bias voltage generator and the second reference voltage, and is turned on or off according to the pre-scan signal. The second scan switch receives the display data and the current scan signal, and is turned on or off according to the current scan signal. The coupling switch is coupled between the bias voltage generator and the first end of the driving transistor to be turned on or off according to the coupling control signal.
基於上述,本發明的畫素結構是利用驅動電晶體、偏壓電壓產生器、初始化開關、第一掃描開關、第二掃描開關以及耦合開關,可使畫素結構中的發光二極體所呈現的亮度只與提供至畫素結構的第一參考電壓以及顯示資料有關。由另一個觀點來看,顯示面板所呈現的亮度與電晶體的臨界電壓以及畫素結構的第一參考操作電壓無關。因此,本發明的畫素結構能有效的改善傳統顯示面板亮度不均勻的問題。 Based on the above, the pixel structure of the present invention utilizes a driving transistor, a bias voltage generator, an initialization switch, a first scan switch, a second scan switch, and a coupling switch to enable the light emitting diode in the pixel structure to be presented. The brightness is only related to the first reference voltage supplied to the pixel structure and the display material. From another point of view, the brightness exhibited by the display panel is independent of the threshold voltage of the transistor and the first reference operating voltage of the pixel structure. Therefore, the pixel structure of the present invention can effectively improve the problem of uneven brightness of the conventional display panel.
為讓本發明的上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。 The above described features and advantages of the invention will be apparent from the following description.
50‧‧‧顯示面板 50‧‧‧ display panel
100、200、300、400、500‧‧‧畫素結構 100, 200, 300, 400, 500‧‧‧ pixel structure
202、302、402‧‧‧偏壓電壓產生器 202, 302, 402‧‧‧ bias voltage generator
204、304、404‧‧‧初始化開關 204, 304, 404‧‧‧ Initialization switch
206、306、406‧‧‧第一掃描開關 206, 306, 406‧‧‧ first scanning switch
208、308、408‧‧‧第二掃描開關 208, 308, 408‧‧‧ second scan switch
210、310、410‧‧‧耦合開關 210, 310, 410‧‧‧ coupling switch
C1、C2、C3‧‧‧電容 C1, C2, C3‧‧‧ capacitors
D1、D2、D3、D4‧‧‧二極體 D1, D2, D3, D4‧‧‧ diodes
DATA‧‧‧資料信號 DATA‧‧‧ data signal
I、I1、I2‧‧‧電流 I, I1, I2‧‧‧ current
INTA‧‧‧初始控制信號 INTA‧‧‧ initial control signal
M1、M2、MB、MB1、MC、MC1、MD、MD1、MD2、MF、MF1、MI、MI1、MS、MS1‧‧‧電晶體 M1, M2, MB, MB1, MC, MC1, MD, MD1, MD2, MF, MF1, MI, MI1, MS, MS1‧‧‧ transistor
OVDD‧‧‧第一參考操作電壓 OVDD‧‧‧First reference operating voltage
OVSS‧‧‧第二參考操作電壓 OVSS‧‧‧second reference operating voltage
P1‧‧‧初始化期間 P1‧‧‧Initial period
P2‧‧‧顯示期間 P2‧‧‧ display period
P11‧‧‧第一子期間 P11‧‧‧ first child period
P12‧‧‧第二子期間 P12‧‧‧ second sub-period
SCAN‧‧‧掃描信號 SCAN‧‧‧ scan signal
SCAN1‧‧‧前級掃描信號 SCAN1‧‧‧ pre-scanning signal
SCAN2‧‧‧目前掃描信號 SCAN2‧‧‧ current scanning signal
V1、V2、VOLED‧‧‧電壓 V1, V2, V OLED ‧ ‧ voltage
Vbias‧‧‧偏壓電壓 Vbias‧‧‧ bias voltage
Vdata‧‧‧顯示資料 Vdata‧‧‧ Display information
Vint‧‧‧第二參考電壓 Vint‧‧‧second reference voltage
Vstd‧‧‧第一參考電壓 Vstd‧‧‧ first reference voltage
COU‧‧‧耦合控制信號 COU‧‧‧ coupling control signal
圖1繪示一種傳統主動式矩陣有機發光二極體(AMOLED)顯示器的畫素結構100的電路圖。 1 is a circuit diagram of a pixel structure 100 of a conventional active matrix organic light emitting diode (AMOLED) display.
圖2繪示本發明一實施例的一種發光二極體顯示器的畫素結構200的電路圖。 2 is a circuit diagram of a pixel structure 200 of a light emitting diode display according to an embodiment of the invention.
圖3A與圖4A分別繪示本發明另一實施例的一種發光二極體 顯示器的畫素結構300與畫素結構400的電路圖。 3A and FIG. 4A respectively illustrate a light emitting diode according to another embodiment of the present invention. A circuit diagram of the pixel structure 300 of the display and the pixel structure 400.
圖3B與圖4B分別繪示為圖3A與圖4A的畫素結構300與畫素結構400的驅動波形圖。 3B and 4B are respectively diagrams showing driving waveforms of the pixel structure 300 and the pixel structure 400 of FIGS. 3A and 4A.
圖5繪示本發明一實施例的一種顯示面板50的示意圖。 FIG. 5 is a schematic diagram of a display panel 50 according to an embodiment of the invention.
圖2繪示本發明一實施例的一種發光二極體顯示器的畫素結構200的電路圖。畫素結構200用以驅動發光二極體D2。畫素結構200包括驅動電晶體MD、偏壓電壓產生器202、初始化開關204、第一掃描開關206、第二掃描開關208以及耦合開關210。在此實施例中,驅動電晶體MD、初始化開關204、第一掃描開關206、第二掃描開關208以及耦合開關210可以是金氧半場效電晶體(metal-oxide-semiconductor field-effect-transistor,MOSFET),偏壓電壓產生器202可以是電容或是由電容與開關元件所組成的電路,發光二極體D2可以是OLED或其他發光元件。 2 is a circuit diagram of a pixel structure 200 of a light emitting diode display according to an embodiment of the invention. The pixel structure 200 is used to drive the light emitting diode D2. The pixel structure 200 includes a driving transistor MD, a bias voltage generator 202, an initialization switch 204, a first scan switch 206, a second scan switch 208, and a coupling switch 210. In this embodiment, the driving transistor MD, the initialization switch 204, the first scan switch 206, the second scan switch 208, and the coupling switch 210 may be metal-oxide-semiconductor field-effect-transistors (metal-oxide-semiconductor field-effect-transistor, The MOSFET), the bias voltage generator 202 can be a capacitor or a circuit composed of a capacitor and a switching element, and the LED D2 can be an OLED or other illuminating element.
舉例來說,驅動電晶體MD可以是P型MOSFET,驅動電晶體MD具有第一端(例如源極端)、第二端(例如汲極端)以及控制端(例如閘極端)。驅動電晶體MD的第一端接收第一參考操作電壓OVDD,驅動電晶體MD的第二端耦接至發光二極體D2的陽極,驅動電晶體MD的控制端接收偏壓電壓Vbias。發光二極體D2的陰極則耦接至第二參考操作電壓OVSS。 For example, the drive transistor MD can be a P-type MOSFET having a first end (eg, a source terminal), a second end (eg, a drain terminal), and a control terminal (eg, a gate terminal). The first end of the driving transistor MD receives the first reference operating voltage OVDD, the second end of the driving transistor MD is coupled to the anode of the LED D2, and the control terminal of the driving transistor MD receives the bias voltage Vbias. The cathode of the LED D2 is coupled to the second reference operating voltage OVSS.
偏壓電壓產生器202耦接驅動電晶體MD,並依據第一參 考電壓Vstd、第二參考電壓Vint、第一參考操作電壓OVDD以及顯示資料Vdata以產生偏壓電壓Vbias,其中,在本實施例中,第一參考電壓Vstd的電壓值低於第一參考操作電壓OVDD。初始化開關204耦接在偏壓電壓產生器202與第一參考電壓Vstd間,並依據初始控制信號INTA以導通(turn on)或斷開(turn off)。第一掃描開關206耦接在偏壓電壓產生器202與第二參考電壓Vint間,並依據前級掃描信號SCAN1以導通或斷開。第二掃描開關208接收顯示資料Vdata以及目前掃描信號SCAN2,並依據目前掃描信號SCAN2以導通或斷開。耦合開關210耦接偏壓電壓產生器202以及驅動電晶體MD的第一端間,並依據耦合控制信號COU以導通或斷開。 The bias voltage generator 202 is coupled to the driving transistor MD and is based on the first parameter The voltage Vstd, the second reference voltage Vint, the first reference operating voltage OVDD, and the display data Vdata are generated to generate a bias voltage Vbias, wherein, in the embodiment, the voltage value of the first reference voltage Vstd is lower than the first reference operating voltage OVDD. The initialization switch 204 is coupled between the bias voltage generator 202 and the first reference voltage Vstd, and is turned on or off according to the initial control signal INTA. The first scan switch 206 is coupled between the bias voltage generator 202 and the second reference voltage Vint, and is turned on or off according to the pre-scan signal SCAN1. The second scan switch 208 receives the display data Vdata and the current scan signal SCAN2, and is turned on or off according to the current scan signal SCAN2. The coupling switch 210 is coupled between the bias voltage generator 202 and the first end of the driving transistor MD, and is turned on or off according to the coupling control signal COU.
畫素結構200利用驅動電晶體MD來提供驅動電流以驅動發光二極體D2。而其中的第一掃描開關206、第二掃描開關208不會同時被導通,且在本發明實施例中,第一掃描開關206、第二掃描開關208可依序被導通。 The pixel structure 200 utilizes a driving transistor MD to provide a driving current to drive the light emitting diode D2. The first scan switch 206 and the second scan switch 208 are not turned on at the same time, and in the embodiment of the present invention, the first scan switch 206 and the second scan switch 208 can be turned on in sequence.
在畫素結構200的動作細節方面,請同時參照圖3A以及圖3B,其中圖3A繪示本發明另一實施例的一種發光二極體顯示器的畫素結構300的電路圖,圖3B繪示為圖3A的畫素結構300的驅動波形圖。畫素結構300包括驅動電晶體MD1、偏壓電壓產生器302、初始化開關304、第一掃描開關306、第二掃描開關308以及耦合開關310。在此實施例中,驅動電晶體MD1、初始化開關304、第一掃描開關306、第二掃描開關308以及耦合開關310 可以是P型MOSFET。偏壓電壓產生器302包括電容C2以及電晶體MB。電容C2的第一端耦接至初始化開關304以及耦合開關310,電容C2的第二端耦接至驅動電晶體MD1的控制端。電晶體MB可以是P型MOSFET,電晶體MB具有第一端、第二端以及控制端。電晶體MB的第二端與控制端共同耦接至電容C2的第二端,電晶體MB的第一端耦接至第二掃描開關308。 For the details of the operation of the pixel structure 200, please refer to FIG. 3A and FIG. 3B simultaneously. FIG. 3A is a circuit diagram of a pixel structure 300 of a light-emitting diode display according to another embodiment of the present invention, and FIG. A driving waveform diagram of the pixel structure 300 of FIG. 3A. The pixel structure 300 includes a driving transistor MD1, a bias voltage generator 302, an initialization switch 304, a first scan switch 306, a second scan switch 308, and a coupling switch 310. In this embodiment, the driving transistor MD1, the initialization switch 304, the first scan switch 306, the second scan switch 308, and the coupling switch 310 It can be a P-type MOSFET. The bias voltage generator 302 includes a capacitor C2 and a transistor MB. The first end of the capacitor C2 is coupled to the initialization switch 304 and the coupling switch 310. The second end of the capacitor C2 is coupled to the control end of the driving transistor MD1. The transistor MB may be a P-type MOSFET, and the transistor MB has a first end, a second end, and a control terminal. The second end of the transistor MB is coupled to the second end of the capacitor C2, and the first end of the transistor MB is coupled to the second scan switch 308.
初始化開關304為電晶體MI(例如:第一電晶體),具有第一端、第二端以及控制端。電晶體MI的第一端接收第一參考電壓Vstd,電晶體MI的第二端耦接至偏壓電壓產生器302,電晶體MI的控制端接收初始控制信號INTA。第一掃描開關306為電晶體MF(例如:第三電晶體),具有第一端、第二端以及控制端。電晶體MF的第一端耦接至偏壓電壓產生器302,電晶體MF的第二端接收第二參考電壓Vint,電晶體MF的控制端接收前級掃描信號SCAN1。 The initialization switch 304 is a transistor MI (eg, a first transistor) having a first end, a second end, and a control end. The first end of the transistor MI receives the first reference voltage Vstd, and the second end of the transistor MI is coupled to the bias voltage generator 302, and the control terminal of the transistor MI receives the initial control signal INTA. The first scan switch 306 is a transistor MF (eg, a third transistor) having a first end, a second end, and a control end. The first end of the transistor MF is coupled to the bias voltage generator 302, the second end of the transistor MF receives the second reference voltage Vint, and the control terminal of the transistor MF receives the pre-scan signal SCAN1.
第二掃描開關308為電晶體MS(例如:第二電晶體),具有第一端、第二端以及控制端。電晶體MS的第一端接收顯示資料Vdata,電晶體MS的第二端耦接至偏壓電壓產生器302,電晶體MS的控制端接收目前掃描信號SCAN2。耦合開關310為電晶體MC(例如:第四電晶體),具有第一端、第二端以及控制端。電晶體MC的第一端耦接至偏壓電壓產生器302,電晶體MC的第二端接收第一參考操作電壓OVDD,電晶體MC的控制端接收耦合控制信號COU。 The second scan switch 308 is a transistor MS (eg, a second transistor) having a first end, a second end, and a control end. The first end of the transistor MS receives the display data Vdata, and the second end of the transistor MS is coupled to the bias voltage generator 302, and the control end of the transistor MS receives the current scan signal SCAN2. The coupling switch 310 is a transistor MC (eg, a fourth transistor) having a first end, a second end, and a control end. The first end of the transistor MC is coupled to the bias voltage generator 302, the second end of the transistor MC receives the first reference operating voltage OVDD, and the control terminal of the transistor MC receives the coupling control signal COU.
在圖3B中,畫素結構300的運作可分為初始化期間P1以及顯示期間P2,顯示期間P2發生在初始化期間P1之後。其中,初始化期間P1又分為第一子期間P11以及第二子期間P12。在畫素結構300的初始化期間P1,偏壓電壓產生器302依據第一參考電壓Vstd、第二參考電壓Vint以及顯示資料Vdata來產生並調整偏壓電壓Vbias。舉例來說,在初始化期間P1的第一子期間P11,初始控制信號INTA與前級掃描信號SCAN1例如等於邏輯低準位,初始化開關304以及第一掃描開關306被導通。另一方面,目前掃描信號SCAN2與耦合控制信號COU例如皆等於邏輯高準位,第二掃描開關308以及耦合開關310則會斷開。第一參考電壓Vstd以及第二參考電壓Vint被提供至偏壓電壓產生器302。由另一個觀點來看,在第一子期間P11,施加在電容C2的第一端與第二端上的電壓分別為第一參考電壓Vstd以及第二參考電壓Vint。 In FIG. 3B, the operation of the pixel structure 300 can be divided into an initialization period P1 and a display period P2, and the display period P2 occurs after the initialization period P1. The initialization period P1 is further divided into a first sub-period P11 and a second sub-period P12. In the initializing period P1 of the pixel structure 300, the bias voltage generator 302 generates and adjusts the bias voltage Vbias in accordance with the first reference voltage Vstd, the second reference voltage Vint, and the display material Vdata. For example, during the first sub-period P11 of the initialization period P1, the initial control signal INTA and the pre-scan signal SCAN1 are, for example, equal to the logic low level, and the initialization switch 304 and the first scan switch 306 are turned on. On the other hand, the current scan signal SCAN2 and the coupling control signal COU are both equal to the logic high level, for example, and the second scan switch 308 and the coupling switch 310 are turned off. The first reference voltage Vstd and the second reference voltage Vint are supplied to the bias voltage generator 302. From another point of view, during the first sub-period P11, the voltages applied to the first and second ends of the capacitor C2 are the first reference voltage Vstd and the second reference voltage Vint, respectively.
接著,在初始化期間P1的第二子期間P12,初始控制信號INTA與目前掃描信號SCAN2例如等於邏輯低準位,而前級掃描信號SCAN1與耦合控制信號COU等於邏輯高準位。因此,初始化開關304以及第二掃描開關308被導通,第一掃描開關306被斷開,顯示資料Vdata被提供至偏壓電壓產生器302以使偏壓電壓Vbias依據顯示資料Vdata而被調整。此時,施加在電容C2的第一端上的電壓仍然為第一參考電壓Vstd。另一方面,施加在電容C2的第二端上的電壓為顯示資料Vdata的電壓值減去電晶體 MB的臨界電壓值,即為偏壓電壓Vbias,偏壓電壓Vbias可依據顯示資料Vdata而被調整。由另一個觀點來看,在初始化期間P1的第二子期間P12時,顯示資料Vdata藉由電晶體MS提供至畫素結構300。 Next, during the second sub-period P12 of the initialization period P1, the initial control signal INTA and the current scan signal SCAN2 are, for example, equal to a logic low level, and the pre-scan signal SCAN1 and the coupling control signal COU are equal to a logic high level. Therefore, the initialization switch 304 and the second scan switch 308 are turned on, the first scan switch 306 is turned off, and the display material Vdata is supplied to the bias voltage generator 302 so that the bias voltage Vbias is adjusted in accordance with the display material Vdata. At this time, the voltage applied to the first end of the capacitor C2 is still the first reference voltage Vstd. On the other hand, the voltage applied to the second end of the capacitor C2 is the voltage value of the display data Vdata minus the transistor. The threshold voltage value of the MB, that is, the bias voltage Vbias, and the bias voltage Vbias can be adjusted according to the display data Vdata. From another point of view, during the second sub-period P12 of the initialization period P1, the display material Vdata is supplied to the pixel structure 300 by the transistor MS.
最後,在顯示期間P2,初始控制信號INTA、前級掃描信號SCAN1以及目前掃描信號SCAN2皆等於邏輯高準位,而耦合控制信號COU等於邏輯低準位。此時,耦合開關310被導通,第一掃描開關306、第二掃描開關308以及初始化開關304被斷開。第一參考操作電壓OVDD被提供至偏壓電壓產生器302以調整偏壓電壓Vbias,驅動電晶體MD1依據調整後的偏壓電壓Vbias以產生驅動電流來驅動發光二極體D3。值得注意的是,上述初始控制信號INTA、前級掃描信號SCAN1、目前掃描信號SCAN2以及耦合控制信號COU的邏輯準位高低與初始化開關304、第一掃描開關306、第二掃描開關308以及耦合開關310的導通和斷開關係僅為一示範性實施例,但本發明並不侷限於此。 Finally, during the display period P2, the initial control signal INTA, the pre-scan signal SCAN1, and the current scan signal SCAN2 are both equal to the logic high level, and the coupled control signal COU is equal to the logic low level. At this time, the coupling switch 310 is turned on, and the first scan switch 306, the second scan switch 308, and the initialization switch 304 are turned off. The first reference operating voltage OVDD is supplied to the bias voltage generator 302 to adjust the bias voltage Vbias, and the driving transistor MD1 drives the light emitting diode D3 according to the adjusted bias voltage Vbias to generate a driving current. It is noted that the logic level of the initial control signal INTA, the pre-scan signal SCAN1, the current scan signal SCAN2, and the coupling control signal COU and the initialization switch 304, the first scan switch 306, the second scan switch 308, and the coupling switch The conduction and disconnection relationship of 310 is merely an exemplary embodiment, but the present invention is not limited thereto.
電晶體MC被導通後,顯示資料Vdata能夠經由電晶體MD1提供給發光二極體D3。另一方面,在顯示期間P2,施加在電容C2的第一端上的電壓為第一參考操作電壓OVDD,施加在電容C2的第二端上的電壓為顯示資料Vdata的電壓值減去電晶體MB的臨界電壓絕對值加上第一參考操作電壓OVDD的電壓值並減去第一參考電壓的電壓值Vstd。施加在電容C2的第二端上的電壓即為偏壓電壓Vbias,也就是驅動電晶體MD1閘極端上的電壓。 由此可知,在顯示期間P2,流經驅動電晶體MD1的電流I1可由下列公式(1)表示:I1=K(Vsg-| Vth |)2............(1)其中,K為驅動電晶體MD1的導電參數(conduction parameter),Vsg為驅動電晶體MD1源極端與閘極端兩端之間的電壓差,Vth為驅動電晶體MD1的臨界電壓。 After the transistor MC is turned on, the display material Vdata can be supplied to the light-emitting diode D3 via the transistor MD1. On the other hand, during the display period P2, the voltage applied to the first terminal of the capacitor C2 is the first reference operating voltage OVDD, and the voltage applied to the second terminal of the capacitor C2 is the voltage value of the display data Vdata minus the transistor. The absolute value of the threshold voltage of the MB is added to the voltage value of the first reference operating voltage OVDD and the voltage value Vstd of the first reference voltage is subtracted. The voltage applied to the second terminal of the capacitor C2 is the bias voltage Vbias, that is, the voltage across the gate terminal of the driving transistor MD1. From this, it can be seen that during the display period P2, the current I1 flowing through the driving transistor MD1 can be expressed by the following formula (1): I1 = K (Vsg - | Vth |) 2 ............ 1) wherein K is a conduction parameter of the driving transistor MD1, Vsg is a voltage difference between the source terminal of the driving transistor MD1 and both ends of the gate terminal, and Vth is a threshold voltage of the driving transistor MD1.
由於在顯示期間P2,驅動電晶體MD1源極端的電壓即為第一參考操作電壓OVDD。因此,公式(1)可表示為:I1=K[OVDD-(Vdata-| Vth |+OVDD-Vstd-| Vth |)]2=K(Vstd-Vdata)2.........................(2)由公式(2)可知,流經發光二極體D3的電流I1只與第一參考電壓Vstd以及顯示資料Vdata有關,而與驅動電晶體MD1的臨界電壓Vth、第一參考操作電壓OVDD以及發光二極體D3的跨壓無關。因此,本發明的畫素架構300利用六個電晶體與一個電容可以克服電晶體在製作過程上的所產生的臨界電壓差異,也不會發生電流流經第一參考操作電壓OVDD導線時所產生的壓降問題。 Since during the display period P2, the voltage at the source terminal of the driving transistor MD1 is the first reference operating voltage OVDD. Therefore, the formula (1) can be expressed as: I1 = K [OVDD - (Vdata - | Vth | + OVDD - Vstd - | Vth |)] 2 = K (Vstd - Vdata) 2 ......... ........... (2) It can be seen from the formula (2) that the current I1 flowing through the light-emitting diode D3 is only related to the first reference voltage Vstd and the display data Vdata, and It is independent of the threshold voltage Vth of the driving transistor MD1, the first reference operating voltage OVDD, and the voltage across the LED D3. Therefore, the pixel structure 300 of the present invention can overcome the difference in threshold voltage generated by the transistor during the fabrication process by using six transistors and one capacitor, and does not generate current when the current flows through the first reference operating voltage OVDD wire. The pressure drop problem.
圖4A與圖4B為畫素結構200動作細節的又一實施例,請同時參照圖4A以及圖4B,其中圖4A繪示本發明又一實施例的一種發光二極體顯示器的畫素結構400的電路圖。圖4B繪示為圖4A的畫素結構400的驅動波形圖。畫素結構400為圖3A中畫素結構300的一種互補式結構。畫素結構400包括驅動電晶體MD2、偏壓電壓產生器402、初始化開關404、第一掃描開關406、第二 掃描開關408以及耦合開關410。在此實施例中,驅動電晶體MD2、初始化開關404、第一掃描開關406、第二掃描開關408以及耦合開關410可以是N型MOSFET。驅動電晶體MD2具有第一端(例如汲極端)、第二端(例如源極端)以及控制端(例如閘極端)。驅動電晶體MD2的第一端接收第一參考操作電壓OVDD,驅動電晶體MD2的第二端耦接至發光二極體D4的陽極,驅動電晶體MD2的控制端接收偏壓電壓Vbias。發光二極體D4的陰極則耦接至第二參考操作電壓OVSS。偏壓電壓產生器402包括電容C3以及電晶體MB1。電容C3的第一端耦接至初始化開關404以及耦合開關410,電容C3的第二端耦接至驅動電晶體MD2的控制端。電晶體MB1可以是N型MOSFET,電晶體MB1具有第一端、第二端以及控制端。電晶體MB1的第二端與控制端共同耦接至電容C3的第二端,電晶體MB1的第一端耦接至第二掃描開關408。 4A and FIG. 4B are still another embodiment of the operation details of the pixel structure 200. Please refer to FIG. 4A and FIG. 4B simultaneously, wherein FIG. 4A illustrates a pixel structure 400 of a light-emitting diode display according to still another embodiment of the present invention. Circuit diagram. FIG. 4B is a driving waveform diagram of the pixel structure 400 of FIG. 4A. The pixel structure 400 is a complementary structure of the pixel structure 300 of FIG. 3A. The pixel structure 400 includes a driving transistor MD2, a bias voltage generator 402, an initialization switch 404, a first scan switch 406, and a second Scan switch 408 and coupling switch 410. In this embodiment, the driving transistor MD2, the initialization switch 404, the first scan switch 406, the second scan switch 408, and the coupling switch 410 may be N-type MOSFETs. The drive transistor MD2 has a first end (eg, a drain terminal), a second end (eg, a source terminal), and a control terminal (eg, a gate terminal). The first end of the driving transistor MD2 receives the first reference operating voltage OVDD, the second end of the driving transistor MD2 is coupled to the anode of the LED D4, and the control terminal of the driving transistor MD2 receives the bias voltage Vbias. The cathode of the LED D4 is coupled to the second reference operating voltage OVSS. The bias voltage generator 402 includes a capacitor C3 and a transistor MB1. The first end of the capacitor C3 is coupled to the initialization switch 404 and the coupling switch 410. The second end of the capacitor C3 is coupled to the control end of the driving transistor MD2. The transistor MB1 may be an N-type MOSFET, and the transistor MB1 has a first end, a second end, and a control terminal. The second end of the transistor MB1 is coupled to the second end of the capacitor C3, and the first end of the transistor MB1 is coupled to the second scan switch 408.
初始化開關404為電晶體MI1,具有第一端、第二端以及控制端。電晶體MI1的第一端接收第一參考電壓Vstd,電晶體MI1的第二端耦接至偏壓電壓產生器402,電晶體MI1的控制端接收初始控制信號INTA。第一掃描開關406為電晶體MF1,具有第一端、第二端以及控制端。電晶體MF1的第一端耦接至偏壓電壓產生器402,電晶體MF1的第二端接收第二參考電壓Vint,電晶體MF1的控制端接收前級掃描信號SCAN1。 The initialization switch 404 is a transistor MI1 having a first end, a second end, and a control end. The first end of the transistor MI1 receives the first reference voltage Vstd, the second end of the transistor MI1 is coupled to the bias voltage generator 402, and the control terminal of the transistor MI1 receives the initial control signal INTA. The first scan switch 406 is a transistor MF1 having a first end, a second end, and a control end. The first end of the transistor MF1 is coupled to the bias voltage generator 402, the second end of the transistor MF1 receives the second reference voltage Vint, and the control terminal of the transistor MF1 receives the pre-scan signal SCAN1.
第二掃描開關408為電晶體MS1,具有第一端、第二端以及控制端。電晶體MS1的第一端接收顯示資料Vdata,電晶體 MS1的第二端耦接至偏壓電壓產生器402,電晶體MS1的控制端接收目前掃描信號SCAN2。耦合開關410為電晶體MC1,具有第一端、第二端以及控制端。電晶體MC1的第一端耦接至偏壓電壓產生器402,電晶體MC1的第二端接收第二參考操作電壓OVSS及發光二極體D4的電壓值VOLED,電晶體MC1的控制端接收耦合控制信號COU。 The second scan switch 408 is a transistor MS1 having a first end, a second end, and a control end. The first end of the transistor MS1 receives the display data Vdata, the second end of the transistor MS1 is coupled to the bias voltage generator 402, and the control terminal of the transistor MS1 receives the current scan signal SCAN2. The coupling switch 410 is a transistor MC1 having a first end, a second end, and a control end. The first end of the transistor MC1 is coupled to the bias voltage generator 402, and the second end of the transistor MC1 receives the second reference operating voltage OVSS and the voltage value V OLED of the LED D4, and the control terminal of the transistor MC1 receives Coupling control signal COU.
在圖4B中,畫素結構400的運作可分為初始化期間P1以及顯示期間P2,顯示期間P2發生在初始化期間P1之後。其中,初始化期間P1又分為第一子期間P11以及第二子期間P12。在畫素結構400的初始化期間P1,偏壓電壓產生器402依據第一參考電壓Vstd、第二參考電壓Vint以及顯示資料Vdata來產生並調整偏壓電壓Vbias。舉例來說,在初始化期間P1的第一子期間P11,初始控制信號INTA與前級掃描信號SCAN1例如等於邏輯高準位,初始化開關404以及第一掃描開關406被導通。另一方面,目前掃描信號SCAN2與耦合控制信號COU例如皆等於邏輯低準位,第二掃描開關408以及耦合開關410則會斷開。第一參考電壓Vstd以及第二參考電壓Vint被提供至偏壓電壓產生器402。由另一個觀點來看,在第一子期間P11,施加在電容C3的第一端與第二端上的電壓分別為第一參考電壓Vstd以及第二參考電壓Vint。 In FIG. 4B, the operation of the pixel structure 400 can be divided into an initialization period P1 and a display period P2, and the display period P2 occurs after the initialization period P1. The initialization period P1 is further divided into a first sub-period P11 and a second sub-period P12. In the initializing period P1 of the pixel structure 400, the bias voltage generator 402 generates and adjusts the bias voltage Vbias according to the first reference voltage Vstd, the second reference voltage Vint, and the display material Vdata. For example, during the first sub-period P11 of the initialization period P1, the initial control signal INTA and the pre-scan signal SCAN1 are, for example, equal to the logic high level, and the initialization switch 404 and the first scan switch 406 are turned on. On the other hand, the current scan signal SCAN2 and the coupling control signal COU are both equal to a logic low level, for example, and the second scan switch 408 and the coupling switch 410 are turned off. The first reference voltage Vstd and the second reference voltage Vint are supplied to the bias voltage generator 402. From another point of view, during the first sub-period P11, the voltages applied to the first and second ends of the capacitor C3 are the first reference voltage Vstd and the second reference voltage Vint, respectively.
接著,在初始化期間P1的第二子期間P12,初始控制信號INTA與目前掃描信號SCAN2例如等於邏輯高準位,而前級掃 描信號SCAN1與耦合控制信號COU等於邏輯低準位。因此,初始化開關404以及第二掃描開關408被導通,第一掃描開關406被斷開,顯示資料Vdata被提供至偏壓電壓產生器402以使偏壓電壓Vbias依據顯示資料Vdata而被調整。此時,施加在電容C3的第一端上的電壓仍然為第一參考電壓Vstd。另一方面,施加在電容C3的第二端上的電壓為顯示資料Vdata的電壓值減去電晶體MB1的臨界電壓值,即為偏壓電壓Vbias,偏壓電壓Vbias可依據顯示資料Vdata而被調整。由另一個觀點來看,在初始化期間P1的第二子期間P12時,顯示資料Vdata藉由電晶體MS1提供至畫素結構400。 Next, in the second sub-period P12 of the initializing period P1, the initial control signal INTA and the current scan signal SCAN2 are, for example, equal to a logic high level, and the pre-scan The trace signal SCAN1 and the coupled control signal COU are equal to a logic low level. Therefore, the initialization switch 404 and the second scan switch 408 are turned on, the first scan switch 406 is turned off, and the display material Vdata is supplied to the bias voltage generator 402 to adjust the bias voltage Vbias according to the display material Vdata. At this time, the voltage applied to the first end of the capacitor C3 is still the first reference voltage Vstd. On the other hand, the voltage applied to the second end of the capacitor C3 is the voltage value of the display data Vdata minus the threshold voltage value of the transistor MB1, that is, the bias voltage Vbias, and the bias voltage Vbias can be based on the display data Vdata. Adjustment. From another point of view, during the second sub-period P12 of the initialization period P1, the display material Vdata is supplied to the pixel structure 400 by the transistor MS1.
最後,在顯示期間P2,初始控制信號INTA、前級掃描信號SCAN1以及目前掃描信號SCAN2皆等於邏輯低準位,而耦合控制信號COU等於邏輯高準位。此時,耦合開關410被導通,第一掃描開關406、第二掃描開關408以及初始化開關404被斷開。第二參考操作電壓OVSS及發光二極體D4的電壓值VOLED被提供至偏壓電壓產生器402以調整偏壓電壓Vbias,驅動電晶體MD2依據調整後的偏壓電壓Vbias以產生驅動電流來驅動發光二極體D4。值得注意的是,上述初始控制信號INTA、前級掃描信號SCAN1、目前掃描信號SCAN2以及耦合控制信號COU的邏輯準位高低與初始化開關404、第一掃描開關406、第二掃描開關408以及耦合開關410的導通和斷開關係僅為一示範性實施例,但本發明並不侷限於此。 Finally, during the display period P2, the initial control signal INTA, the pre-scan signal SCAN1, and the current scan signal SCAN2 are both equal to the logic low level, and the coupled control signal COU is equal to the logic high level. At this time, the coupling switch 410 is turned on, and the first scan switch 406, the second scan switch 408, and the initialization switch 404 are turned off. The second reference operating voltage OVSS and the voltage value V OLED of the LED D4 are supplied to the bias voltage generator 402 to adjust the bias voltage Vbias, and the driving transistor MD2 generates a driving current according to the adjusted bias voltage Vbias. The light-emitting diode D4 is driven. It should be noted that the logic level of the initial control signal INTA, the pre-scan signal SCAN1, the current scan signal SCAN2, and the coupling control signal COU and the initialization switch 404, the first scan switch 406, the second scan switch 408, and the coupling switch The conduction and disconnection relationship of 410 is merely an exemplary embodiment, but the present invention is not limited thereto.
電晶體MC1被導通後,顯示資料Vdata能夠經由電晶體MD2提供給發光二極體D4。另一方面,在顯示期間P2,施加在電容C3的第一端上的電壓為第二參考操作電壓OVSS加上發光二極體D4的電壓值VOLED,施加在電容C2的第二端上的電壓為顯示資料Vdata的電壓值加上電晶體MB1的臨界電壓絕對值再加上第二參考操作電壓OVSS的電壓值與發光二極體D4的電壓值VOLED並減去第一參考電壓的電壓值Vstd。施加在電容C3的第二端上的電壓即為偏壓電壓Vbias,也就是驅動電晶體MD2閘極端上的電壓。由此可知,在顯示期間P2,流經驅動電晶體MD2的電流I2可由下列公式(3)表示:I2=K(Vgs-| Vth |)2............(3)其中,K為驅動電晶體MD2的導電參數(conduction parameter),Vgs為驅動電晶體MD2閘極端與源極端兩端之間的電壓差,Vth為驅動電晶體MD2的臨界電壓。 After the transistor MC1 is turned on, the display material Vdata can be supplied to the light-emitting diode D4 via the transistor MD2. On the other hand, during the display period P2, the voltage applied to the first end of the capacitor C3 is the second reference operating voltage OVSS plus the voltage value V OLED of the light-emitting diode D4, applied to the second end of the capacitor C2. The voltage is the voltage value of the display data Vdata plus the absolute value of the threshold voltage of the transistor MB1 plus the voltage value of the second reference operating voltage OVSS and the voltage value V OLED of the light-emitting diode D4 minus the voltage of the first reference voltage. The value is Vstd. The voltage applied to the second terminal of the capacitor C3 is the bias voltage Vbias, that is, the voltage across the gate terminal of the driving transistor MD2. From this, it can be seen that during the display period P2, the current I2 flowing through the driving transistor MD2 can be expressed by the following formula (3): I2 = K(Vgs - | Vth |) 2 ............ 3) wherein K is a conduction parameter of the driving transistor MD2, Vgs is a voltage difference between the gate terminal and the source terminal of the driving transistor MD2, and Vth is a threshold voltage of the driving transistor MD2.
由上述說明可知,公式(3)又可表示為:I2=K[(Vdata+| Vth |+OVSS+VOLED-Vstd)-(OVSS+VOLED)-| Vth |)]2=K(Vdata-Vstd)2.........................(4)由公式(4)可知,流經發光二極體D4的電流I2只與第一參考電壓Vstd以及顯示資料Vdata有關,而與驅動電晶體MD2的臨界電壓Vth、第一參考操作電壓OVDD、第二參考操作電壓OVSS以及發光二極體D4的電壓值VOLED無關。因此,本發明的畫素架構400利用六個電晶體與一個電容可以克服電晶體在製作過程上的所產 生的臨界電壓差異,也不會發生電流流經第一參考操作電壓OVDD導線時所產生的壓降問題。 It can be seen from the above description that the formula (3) can be expressed as: I2=K[(Vdata+| Vth |+OVSS+V OLED -Vstd)-(OVSS+V OLED )-| Vth |)] 2 =K(Vdata- Vstd) 2 ......................... (4) From equation (4), the current I2 flowing through the light-emitting diode D4 is only The first reference voltage Vstd is related to the display material Vdata, and is independent of the threshold voltage Vth of the driving transistor MD2, the first reference operating voltage OVDD, the second reference operating voltage OVSS, and the voltage value V OLED of the light-emitting diode D4. Therefore, the pixel structure 400 of the present invention utilizes six transistors and one capacitor to overcome the threshold voltage difference generated by the transistor during the fabrication process, and does not generate current when flowing through the first reference operating voltage OVDD wire. The pressure drop problem.
圖5繪示本發明一實施例的一種顯示面板50的示意圖。顯示面板50包括多數個畫素結構500,多數個畫素結構500配置成多個顯示列,多個顯示列接收對應的初始控制信號INTA、目前掃描信號SCAN1、前級掃描信號SCAN2以及耦合控制信號COU。另一方面,多個顯示列接收對應的第一參考電壓Vstd、第二參考電壓Vint、第一參考操作電壓OVDD以及顯示資料Vdata。其中,多數個畫素結構500的電路配置以及動作細節可參考圖2中的畫素結構200、圖3A中的畫素結構300或是圖4A中的畫素結構400,不在此贅述。與傳統的顯示面板相比,採用畫素結構500的顯示面板50可改善傳統顯示面板在顯示期間亮度不均勻的問題。 FIG. 5 is a schematic diagram of a display panel 50 according to an embodiment of the invention. The display panel 50 includes a plurality of pixel structures 500. The plurality of pixel structures 500 are configured as a plurality of display columns. The plurality of display columns receive the corresponding initial control signal INTA, the current scan signal SCAN1, the pre-scan signal SCAN2, and the coupling control signal. COU. On the other hand, the plurality of display columns receive the corresponding first reference voltage Vstd, second reference voltage Vint, first reference operating voltage OVDD, and display material Vdata. For the circuit configuration and operation details of the plurality of pixel structures 500, reference may be made to the pixel structure 200 in FIG. 2, the pixel structure 300 in FIG. 3A, or the pixel structure 400 in FIG. 4A, and details are not described herein. The display panel 50 employing the pixel structure 500 can improve the brightness unevenness of the conventional display panel during display as compared with the conventional display panel.
綜上所述,本發明的畫素結構是利用驅動電晶體、偏壓電壓產生器、初始化開關、第一掃描開關、第二掃描開關以及耦合開關,在顯示面板的顯示期間,顯示面板所呈現的亮度只與提供至畫素結構的第一參考電壓以及顯示資料有關,而與電晶體的臨界電壓以及畫素結構的第一參考操作電壓無關。因此,本發明的顯示面板與其畫素結構能補償電晶體在製造過程中臨界電壓存在差異的問題。另一方面,由於顯示面板所呈現的亮度與畫素結構的第一參考操作電壓無關,因此,本發明的顯示面板與其畫素結構能有效的改善傳統的顯示面板亮度不均勻的問題。 In summary, the pixel structure of the present invention utilizes a driving transistor, a bias voltage generator, an initialization switch, a first scan switch, a second scan switch, and a coupling switch, and the display panel is presented during display of the display panel. The brightness is only related to the first reference voltage supplied to the pixel structure and the display data, and is independent of the threshold voltage of the transistor and the first reference operating voltage of the pixel structure. Therefore, the display panel of the present invention and its pixel structure can compensate for the problem that the threshold voltage of the transistor is different during the manufacturing process. On the other hand, since the brightness exhibited by the display panel is independent of the first reference operating voltage of the pixel structure, the display panel of the present invention and its pixel structure can effectively improve the brightness unevenness of the conventional display panel.
雖然本發明已以實施例揭露如上,然其並非用以限定本 發明,任何所屬技術領域中具有通常知識者,在不脫離本發明的精神和範圍內,當可作些許的更動與潤飾,故本發明的保護範圍當視後附的申請專利範圍所界定者為準。 Although the present invention has been disclosed above by way of example, it is not intended to limit the present invention. The scope of the present invention is defined by the scope of the appended claims, which are defined by the scope of the appended claims, without departing from the spirit and scope of the invention. quasi.
200‧‧‧畫素結構 200‧‧‧ pixel structure
202‧‧‧偏壓電壓產生器 202‧‧‧Bias voltage generator
204‧‧‧初始化開關 204‧‧‧Initial switch
206‧‧‧第一掃描開關 206‧‧‧First scan switch
208‧‧‧第二掃描開關 208‧‧‧Second scan switch
210‧‧‧耦合開關 210‧‧‧coupled switch
COU‧‧‧耦合控制信號 COU‧‧‧ coupling control signal
D2‧‧‧發光二極體 D2‧‧‧Lighting diode
INTA‧‧‧初始控制信號 INTA‧‧‧ initial control signal
MD‧‧‧驅動電晶體 MD‧‧‧ drive transistor
OVDD‧‧‧第一參考操作電壓 OVDD‧‧‧First reference operating voltage
OVSS‧‧‧第二參考操作電壓 OVSS‧‧‧second reference operating voltage
SCAN1‧‧‧前級掃描信號 SCAN1‧‧‧ pre-scanning signal
SCAN2‧‧‧目前掃描信號 SCAN2‧‧‧ current scanning signal
Vbias‧‧‧偏壓電壓 Vbias‧‧‧ bias voltage
Vdata‧‧‧顯示資料 Vdata‧‧‧ Display information
Vint‧‧‧第二參考電壓 Vint‧‧‧second reference voltage
Vstd‧‧‧第一參考電壓 Vstd‧‧‧ first reference voltage
I‧‧‧電流 I‧‧‧current
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