TWI500795B - Film forming device - Google Patents

Description

Film forming device

The present invention relates to a film forming apparatus, and more particularly to a film forming apparatus for a magnetoresistive effect element used in a sensor of an MRAM (magnetic random access memory) or a magnetic head.

In a sensor of MRAM (magnetic random access memory) or a magnetic head, a device that utilizes a magnetoresistance effect is used. Such devices are known to cause deterioration in the performance of TMR characteristics and the like due to impurities in the device. Therefore, as a vacuum environment in a sputtering apparatus for fabricating an MRAM device, an ultra-high vacuum of 10 ^-7 Pa to 10 ^-8 Pa is required. Under such a degree of vacuum, hydrogen and water constitute most of the impurities. In order to remove it, it is desirable to use a film which is attached to a wall of a sputtering apparatus in a vacuum environment to adsorb an impurity of a material such as titanium or tantalum to trap impurities. Refer to Patent Document 1).

According to the technique of Patent Document 1, a film of titanium or the like is formed at a portion of the inner wall or the gate in the film forming apparatus of the forming apparatus, and the effect of removing impurities is obtained. As a sputtering source for forming a film of titanium or the like, A target mounting portion to which titanium or the like is attached is used.

[Previous Technical Literature]

[Patent Literature]

Patent Document 1: International Publication No. WO2007/105472

However, in the technique of Patent Document 1, if the material to be mounted on the cathode is limited to titanium or tantalum having a degaussing effect in the case of an MRAM device requiring a large number of laminated films, there is a further increase. The number of cathodes is necessary. However, since the increase in the number of cathodes causes an increase in the size of the vacuum vessel or an increase in the number of vacuum vessels, there is a hindrance to the cost reduction of the film forming apparatus.

The present invention has been made in view of the above problems, and an object thereof is to provide a film forming apparatus which can form a material having a deburring effect in a device without being affected by the size or the number of vacuum containers.

The film forming apparatus of the present invention includes a plurality of first target electrodes, a first mounting portion capable of attaching a target for film formation, and a substrate holder in accordance with the plurality of 1 target electrode The substrate is held at a position facing the second position; and the second target electrode has a second mounting portion that can be mounted with a target for removing the target and is smaller than the first mounting portion; and the first shutter member is The first target electrode and the second mounting portion are shielded between the first target electrode and the substrate holder.

In the film forming apparatus of the present invention, a small target for mounting titanium or tantalum having a high degaussing effect as a target G is provided in a space at a mounting position of a target electrode for film formation. electrode. Therefore, the de-ruthenium material is sputtered from the target G to the space (film forming chamber) where the MRAM is fabricated or the back side of the shutter plate, and the ultra-high vacuum can be obtained by the de-twisting effect. Further, since the small target electrode mounted on the target G is adjusted so as to be able to be disposed between the gaps of the target electrode for film formation provided in plural, vacuum is not required. The increase in the size of the container or the increase in the number of vacuum containers is such that the space occupied by the film forming apparatus is suppressed.

Other features and advantages of the present invention will become apparent from the following description of the appended drawings. In addition, in the attached drawings, the same component symbols are attached to the same or the same components.

10‧‧‧ film forming device

11‧‧‧Robot transport device

12‧‧‧Transport chamber

14‧‧‧Hand

15‧‧‧Loading/unloading chamber

16‧‧‧Loading/unloading chamber

17A‧‧‧filming chamber

17B‧‧‧filming chamber

17C‧‧‧filming chamber

17D‧‧‧film cavity

17E‧‧‧filming chamber

18‧‧‧Vacuum exhaust

19‧‧‧Based gate

20‧‧‧ gate valve

21‧‧‧Inside shield

33‧‧‧Substrate holder

34‧‧‧Substrate

35‧‧‧ target electrode

36‧‧‧Target electrode

37‧‧‧ target electrode

38‧‧‧Target electrode

41‧‧‧ target electrode

51‧‧‧ Container

54‧‧‧Rotary gate device

61‧‧‧Target electrode holder

61a‧‧‧Support Department

61b‧‧‧Support Department

63‧‧‧Upper shield

63a‧‧‧ openings

63b‧‧‧ openings

65‧‧‧1st gate panel

65a‧‧‧ openings

65b‧‧‧Rotary axis

65c‧‧‧ openings

65d‧‧‧Area

67‧‧‧2nd gate panel

67a‧‧‧ openings

67b‧‧‧Rotary axis

67c‧‧‧ openings

67d‧‧‧Area

85‧‧‧1st gate panel

87‧‧‧2nd gate panel

A‧‧‧ target

B‧‧‧ Target

C‧‧‧target

D‧‧‧ Target

G‧‧‧ Target

The accompanying drawings, which are incorporated in and constitute a

Fig. 1 is a plan view showing a configuration of a representative embodiment of a film forming apparatus of the present invention.

Fig. 2 is a top view schematically showing a configuration of one of the film forming chambers of the film forming apparatus according to the first embodiment of the present invention.

FIG. 3 is a cross-sectional view taken along line X-X of FIG. 2.

Fig. 4 is a perspective view showing each member constituting the shutter device according to the first embodiment of the present invention.

Fig. 5 is an explanatory view of the operation of the shutter device and the substance to be sputtered in the first embodiment of the present invention.

Fig. 6 is an explanatory view showing the operation of the shutter device and the substance to be sputtered in connection with another embodiment of the present invention.

Fig. 7 is a view showing the effect of the film forming apparatus of the first embodiment of the present invention.

Hereinafter, suitable embodiments of the present invention will be described based on the attached drawings. The components, the configurations, and the like described below are examples of the present invention, and are not intended to limit the present invention. Of course, various modifications can be made in accordance with the gist of the present invention. The application of the film forming apparatus of the present invention is not limited to the sputtering apparatus, but can be applied to a vacuum container and can be used by a shutter device. The evaporation material is selected among various PVD devices.

(First embodiment)

Fig. 1 is a plan view showing a typical configuration of a film forming apparatus according to a first embodiment of the present invention, and showing a schematic configuration of an internal mechanism. The film forming apparatus 10 is of a cluster type and has a plurality of film forming cavities. The transport chamber 12 including the robot transport device 11 is provided at a central position. The robot transfer device 11 can mount a substrate by a hand 14 provided on an arm that can be freely extended and contracted. The base end portion of the arm is rotatably attached to the center portion of the transfer chamber 12.

In the transfer chamber 12 of the film forming apparatus 10, loading/unloading chambers 15, 16 are provided. By loading/unloading the chamber 15, the substrate as the material to be processed is carried into the film forming apparatus 10 from the outside, and the substrate on which the film formation process of the multilayer film is completed is carried out to the outside of the film forming apparatus 10. The loading/unloading chamber 16 is also provided with the same function, and the substrate carried in through the loading/unloading chamber 16 is carried out from the chamber.

In the film forming apparatus 10, five film forming chambers 17A, 17B, 17C, 17D, and 17E (hereinafter referred to as film chambers 17A to 17E) are provided around the transfer chamber 12. Between two adjacent chambers, a gate valve 20 is provided which is provided to isolate the two chambers from each other and is freely openable and closable.

Each of the film forming chambers 17A to 17E is a film forming chamber for continuously forming a film of a different type of film in the same cavity. According to this implementation The form is formed by dividing a multilayer film deposited on a substrate into a plurality of groups, and forming a film of a plurality of films belonging to each group in any of the film forming chambers set in advance. In each of the film forming chambers 17A to 17E, the magnetic film is deposited by a PVD (Physical Vapor Deposition) method using sputtering. Further, of course, it is possible to adopt a configuration in which the film formation chambers of the films belonging to the same group are formed in a plurality of configurations to increase the yield.

In the film forming apparatus 10, the substrate 34 that has been carried into the inside by the loading/unloading chambers 15 and 16 is preliminarily prepared in accordance with the order of the multilayer film device to be manufactured by the robot transfer device 11. Each of them is introduced into each of the film forming chambers 17A to 17E, and a predetermined film forming process is performed in each cavity. Examples of the multilayer film device to be produced include LED, MRAM, TMR head, ADVENCED (modified) GMR, and the like.

In addition, in FIG. 1, a vacuum exhaust device 18 for setting the inside of the film forming chambers 17A to 17E to a desired vacuum state, and a power supply device for supplying electric power applied to the target electrodes 35 to 38 are provided. The means to be attached to each of the target electrodes 35 to 38, the apparatus for introducing a process gas introducing means for plasma, and the like are omitted.

Further, an oxide film forming chamber or a clean chamber may be disposed instead of the film forming chamber as needed. The oxide film forming chamber is a chamber for performing a surface chemical reaction for oxidizing the metal layer, and in the surface chemical reaction, plasma oxidation, natural oxidation, ozone oxidation, ultraviolet-ozone oxidation, radical oxygen, and the like are used. Clean cavity by ion beam etching mechanism or RF sputtering The chamber is planarized by etching the mechanism. The film forming chambers 17A to 17E of the present embodiment are all of the same configuration. However, of course, they are mounted on the target electrode of each film forming chamber in accordance with the film configuration of the multilayer film device to be produced. The type of target has also been changed.

The characteristic structure provided in each of the film forming chambers 17A to 17E will be described based on FIGS. 2 and 3. The film forming chambers 17A, 17B, 17C, 17D, and 17E of the present embodiment have the same configuration. Therefore, the film forming chambers 17A are schematically shown in Figs. 2 and 3. Fig. 2 is a schematic view showing the film forming chamber 17A from above, and the target electrode 35 to 38 (first target electrode) and the target electrode 41 for removing the target are known (second The positional relationship between the target electrodes is depicted. Fig. 3 is a longitudinal sectional view of the film forming chamber 17A. In FIGS. 2 and 3, elements that are substantially the same as those described in FIG. 1 are denoted by the same reference numerals.

In the top plate portion of the container 51 (vacuum container) of the film forming chamber 17A, four target electrodes 35 to 38 (first target electrode) for film formation and a target electrode 41 for removing the film are provided ( Second target electrode). The target electrodes 35 to 38 are known cathodes including a mounting portion (first mounting portion) capable of attaching a target material to which a film formation material is bonded to the substrate.

A substrate holder 33 is rotatably provided at the center of the bottom surface portion of the film forming chamber 17A. The substrate holder 33 is capable of holding the substrate 34 in a rotated state when performing sputtering on the substrate 34. Each of the target electrodes 35 to 38 that are tilted At the mounting portion, the targets A to D can be arranged to face the upper surface of the substrate 34 which is disposed horizontally below. At the targets A to D, the film-forming materials used in the film formation process are bonded, respectively. In addition, the state in which the targets A to D and the substrate 34 are opposed to each other means that the target electrodes 35 to 38 (more precisely, the mounting portions of the target electrodes 35 to 38) are directed toward the periphery of the substrate. The state of the arrangement is the state in which the sputtering surface of the targets A to D is inclined toward the substrate 34 as shown in FIG.

The target electrode 41 to be used is a mounting portion (second mounting portion) having a target G for attaching and lowering the target material A to D smaller than the film forming target. Therefore, the target electrode 41 has a smaller size than the target electrodes 35 to 38. Further, since the mounting portion of the target electrode 41 is small compared to the target electrodes 35 to 38, the target G attached to the target electrode 41 is compared to the target A for film formation. ~D, also small. Therefore, the target electrode 41 can be attached to the gap of the mounting position of the target electrodes 35 to 38. For example, the second target electrode of the target electrode 41 can be mounted between any two adjacent target electrodes of the first target electrode of each of the target electrodes 35 to 38.

In the present embodiment, the target electrode 41 is mounted between the target electrode 36 and the target electrode 38, but may be mounted between other target electrodes. That is, since the arrangement of the target electrodes 35 to 38 is not required even if the target electrode 41 is provided, it is not necessary to change the size of the vacuum container. Of course, it is not necessary to increase the provision of the vacuum container due to the presence of the target electrode 41. Here, the so-called target The mounting portion (second mounting portion) of the material electrode 41 is smaller than the mounting portion (first mounting portion) of the target electrodes 35 to 38, and specifically refers to a portion where the mounting portion of the target is mounted. The area is small.

A rotary shutter device 54 is disposed between the targets A to D, G and the substrate 34. The rotary gate device 54 has a double gate plate. By the operation of the rotary shutter device 54, the target electrode systems of the targets A to D and G used in the sputtering film formation are selected among the target electrodes 35 to 38 and 41.

A rotary shutter device 54 is disposed between the targets A to D, G and the substrate holder 33. The rotary shutter device 54 will be described later. Further, a substrate shutter 19 is disposed between the rotary shutter device 54 and the substrate holder 33. The substrate shutter 19 is a metal plate-like member that is configured to be movable on the substrate holder 33, and is coupled to a motor that moves the substrate shutter 19. The motor is coupled to the control unit. In the case of pre-sputtering, since the sputtering is performed in a state where the substrate 34 does not exist on the substrate holder 33, the substrate holder 33 is covered by the substrate shutter 19. At the time of film formation, it is configured to be movable so that the substrate shutter 19 is retracted from the substrate placed on the substrate holder 33.

The rotary gate device 54 will be described based on FIGS. 3 to 6. 4 is a perspective view of the members constituting the rotary shutter device 54. The rotary shutter device 54 includes a target electrode holder 61, an upper shielding plate (shielding member) 63, a first shutter plate (first shutter member) 65, and a second shutter plate (second shutter member) 67. . First gate plate 65 The second shutter plate 67 is constructed as a shutter plate of a double rotary gate. Further, the upper shielding plate 63, the first shutter plate 65, and the second shutter plate 67 are substantially parallel to each other, and are each formed into a convex curved shape.

The target electrode holder 61 is a member provided with a support portion 61a of four places for holding the target electrodes 35 to 38 and a support portion 61b of the target electrode 41, and is provided on the upper portion of the container 51. The target electrode holder 61 of the present embodiment is also provided with a function as a lid of the container 51. However, a support portion 61a and a support portion 61b may be provided in one portion of the container 51.

At the target electrodes 35 to 38 held by the support portion 61a, the targets A to D to which any of the film-forming substances used in the film formation process are bonded can be held in the direction of the substrate 34. . At the target electrode 41 supported by the support portion 61b, the target G to which the titanium is bonded can be held in the direction of the substrate holder 33. Further, the portions of the target electrodes 35 to 38 and 41 that hold the targets A to D and G are used as the target mounting faces. The material of the target G is exemplified by titanium (Ti). However, any film-formed material used for the ruthenium can be used. For example, in addition to titanium, Ta, Zr, Cr, Mg, or the like can also be considered.

The upper shielding plate (shielding member) 63 is a stainless steel anti-adhesion shielding plate provided at the side of the substrate holder 33 of the target electrode holder 61, and prevents atoms sputtered from the targets A to D. The case of being attached to the target electrode holder 61. Upper shielding plate 63, tied to the target Openings 63a and 63b are formed in regions where the target mounting surfaces (mounting surfaces) of the material electrodes 35 to 38 and 41 face each other. Since a total of five target electrodes 35 to 38, 41 are held at the target electrode holder 61, the upper shield plate 63 is opposed to the target mounting faces of the respective target electrodes 35 to 38, 41. At the positions of the directions, openings are formed, respectively.

The first shutter plate (first shutter member) 65 is a stainless steel shutter plate that is rotatably provided on the side of the substrate holder 33 of the upper shielding plate 63, and is rotatable by rotation on the rotating shaft 65b. Angle for control. The first shutter plate 65 is formed with an opening 65a at each of the regions facing the target mounting portion of the target electrode for film formation, and is used for the target electrode 41 for use in the removal. An opening 65c is formed at a region where the target mounting portion faces. The two openings 65a formed in the first shutter plate 65 are formed at positions symmetrical with respect to the rotation shaft 65b. The opening 65c of the present embodiment is formed at an adjacent position of the opening 65a of one of the openings. Further, the first shutter plate 65 can shield the mounting portions of the target electrodes 35 to 38 and the mounting portion of the target electrode 41 by rotating to a predetermined position, and can be mounted in any one or plural. The portion is exposed on the substrate 34 side.

The second shutter plate (second shutter member) 67 is a stainless steel shutter plate that is rotatably provided on the side of the substrate holder 33 of the first shutter plate 65, and is rotatable on the rotating shaft 67b. The angle of rotation is controlled. The rotating shaft 65b and the rotating shaft 67b are configured to be rotatable independently of each other. The second shutter plate 67 is located at a region facing the target mounting portion of the target electrode for film formation. An opening 67a is formed, and an opening 67c is formed in a region facing the target mounting portion of the target electrode 41 for de-turning. Further, the two openings 67a formed in the second shutter plate 67 are formed so as to be able to face the openings 65a formed in the first shutter plate 65. Further, the second shutter plate 67 can be shielded by the mounting portion of the target electrodes 35 to 38 and the mounting portion of the target electrode 41 by being rotated to a predetermined position together with the first shutter plate 65. One or a plurality of mounting portions are exposed on the substrate 34 side.

The operation of the rotary shutter device 54 when a deburring film is formed at a predetermined place will be described using Figs. 5a to 5c and Figs. 6a to 6e. 5a to 5c of FIG. 5 are for the use of the timings of the respective targets A to D, G and the respective gate plates in the case where a gate device suitable for simultaneous sputtering (Co-spatter) is used. Description of the configuration.

5a to 5c of Fig. 5 are views for observing the upper shielding plate 63, the first shutter plate 65, and the second shutter plate 67 among the members constituting the rotary shutter device 54 from above. The rotary shutter device 54 is configured such that the first shutter plate 65 and the first target plate 65 are exposed to the substrate through the openings 65a and 67a when the substrate 34 is sputter-deposited. The shutter plate 67 is rotated for the user. In the film forming apparatus of the present invention, it is possible to form a ruthenium film at a predetermined place by the target G for use in the target electrode 41 before being sputter-deposited on the substrate 34. . Examples of the place where the decant film is formed include the first shutter plate 65, the second shutter plate 67, the horizontal shutter plate, the inner wall of the vacuum container, or the shielding plate.

5a of FIG. 5 is an arrangement for forming a Ti film for removing from the target electrode 41 on the second shutter plate 67. The first shutter plate 65 is rotated after the opening 65c is positioned in front of the target G for removing the target, and the second shutter plate 67 is such that the opening 67c is not positioned at the target G. It was stopped in the previous way. At this time, when electric power is applied to the target electrode 41, Ti which is sputtered from the target G attached to the mounting portion passes through the opening 65c and is formed on the upper surface of the second shutter plate 67. 67d.

Thereby, the material to be removed which is formed in the region 67d functions as a vacuum pump, and the inside of the vacuum vessel is exhausted. The impurities existing in the gaps between the first shutter plate 65 and the second shutter plate 67 can be effectively removed. Since the first shutter plate 65 is positioned between the target G and the second shutter plate 67, there is no contamination from the targets A to D from the target G. In addition, by the arrangement of the first shutter plate 65 and the second shutter plate 67 shown in FIG. 5(a), the target materials A and D are not subjected to sputtering from the target G. In the case of sputtering, it is possible to perform simultaneous sputtering of the targets A and D.

In addition, although the embodiment in which the squeezing film is formed in a state in which the rotation of the second shutter plate 67 is stopped is described in FIG. 5A, the second shutter plate 67 may be rotated. Film formation is performed on one side. In this case, the region 67d is formed into a ring shape, and the deburring film can be formed at a wider range than the embodiment of Fig. 5(a).

5b of FIG. 5 is an arrangement for forming a Ti film for removing from the target electrode 41 on the first shutter plate 65. First gate board 65 is stopped after being rotated so that the opening 65c is not positioned before the target G for use. At this time, when electric power is applied to the target electrode 41, Ti which is sputtered from the target G is formed on the upper surface 65d of the first shutter plate 65. Thereby, the material to be removed which is formed in the region 65d functions as a vacuum pump, and the inside of the vacuum vessel is exhausted. In addition, by the arrangement of the first shutter plate 65 and the second shutter plate 67 shown in FIG. 5B, the sputtering from the target G is performed without performing the sputtering from the target B and C. In the case of sputtering, it is possible to perform simultaneous sputtering of the targets B and C.

In addition, although the embodiment in which the squeezing film is formed in a state in which the rotation of the first shutter plate 65 is stopped is described in FIG. 5 and 5b, the first shutter plate 65 may be rotated. Film formation is performed on one side. In this case, the region 65d is formed into a ring shape, and the deburring film can be formed at a wider range than the embodiment of FIG. 5(b).

5c of FIG. 5 is an arrangement for forming a Ti film for removing germanium in a film forming space in which the substrate is disposed. The opening 65c and the opening 67c are both positioned in front of the target G for use. At this time, when electric power is applied to the target electrode 41, Ti which is sputtered from the target G is formed into the film forming chamber through the openings 65c and 67c. Specifically, a Ti film having a deburring effect is formed on the upper surface of the substrate shutter 19 or the inner shielding plate 21 provided along the inner wall of the container 51. Further, since the opening 67c is formed to be larger than the opening 65c, the Ti which is sputtered from the target G is diffused while being released into the film forming chamber. Therefore, it is possible to form a wide range in the film forming chamber. Into the aponeurosis.

Thereby, impurities existing in the film forming chamber can be effectively removed. In the film forming apparatus of the present embodiment, the target G is oriented in the direction of the substrate, and the deburring film can be formed on the upper surface of the substrate shutter 19 or the shielding plate 21. However, it is also possible to make the orientation of the target G away from the substrate 34, and to form more deburring film at the inner side of the shielding plate 21.

6a to 6e are explanatory views of the timings of using the respective targets A to D, G and the arrangement of the respective shutter plates when the shutter device of the film forming apparatus of the other embodiment is used. This gate device is provided with a structure suitable for single sputtering. Incidentally, the same components as those of the above-described embodiment are denoted by the same reference numerals, and their description will be omitted. 6a of FIG. 6 is an arrangement for forming a Ti film for removing from the target electrode 41 on the second shutter plate 87. The opening 65c of the first shutter plate 85 is positioned in front of the target G for use and the opening 67c of the second shutter 87 is not positioned in front of the target G for use. Configuration. At this time, when electric power is applied to the target electrode 41, Ti which is sputtered from the target G is formed in the region 67d on the upper surface of the second shutter plate 87 through the opening 65c.

Thereby, the material to be removed which is formed in the region 67d functions as a vacuum pump, and the inside of the vacuum vessel is exhausted. Since the first shutter plate 85 is positioned between the target G and the second shutter plate 87, there is no contamination from the targets A to D from the target G. In addition, the first shutter plate 85 and the second shutter plate 87 shown in 6a of FIG. 6 can be used. The arrangement is performed in place of the target G to perform sputtering deposition from the target A.

6b of FIG. 6 is an arrangement for forming a Ti film for removing from the target electrode 41 at the region 67e of the second shutter plate 87. The opening 65c of the first shutter plate 85 is positioned in front of the target G for use and the opening 67c of the second shutter 87 is not positioned in front of the target G for use. Configuration. The positions of the regions 67e and 67d are different.

Thereby, the material which is formed in the region 67e in the case where the contamination of the target material A to D from the target G is suppressed is exerted as a vacuum pump, and the vacuum container is placed in the vacuum container. exhaust. In addition, by the arrangement of the first shutter plate 85 and the second shutter plate 87 shown in FIG. 6B, the sputtering of the target material B can be performed instead of the target G.

6c of FIG. 6 is an arrangement for forming a Ti film for removing from the target electrode 41 at the region 65d of the first shutter plate 85. The region 65d of the first shutter plate 85 is disposed so as to face the front surface of the target G for deburring. Therefore, in the case where the contamination of the other targets A to D from the target G is suppressed, the material which is formed in the region 65d is subjected to a vacuum pump, and the vacuum container is used. Internal exhaust. Further, by the arrangement of the first shutter plate 85 and the second shutter plate 87 shown in FIG. 6(c), the sputtering of the target material C can be performed instead of the target G.

6d of Figure 6 is the same as 6c of Figure 6, for use in the target The material electrode 41 is formed in the region 65d of the first shutter plate 85 at the region 65d for removing the Ti film. The region 65d of the first shutter plate 85 is disposed so as to face the front surface of the target G for deburring. The sputtering of the target material D can be performed by replacing the target G by the arrangement of the first shutter plate 85 and the second shutter plate 87 shown in 6d of Fig. 6 .

6E of Fig. 6 is an arrangement for forming a Ti film for deintercalation in a film formation space in which a substrate is placed, and the same effect as 5C of Fig. 5 can be expected. The opening 65c and the opening 67c are both positioned in front of the target G for use. At this time, if electric power is applied to the target electrode 41, Ti which is sputtered from the target G passes through the opening 65c and the opening 67c, and is on the upper surface of the substrate shutter 19 in the film forming chamber or on the inner shielding plate 21. A Ti film having a deuterium effect is formed.

In the above-described embodiment, the film forming apparatus using one target G for removing the object is described, but the number of the target G is not limited. For example, it is of course possible to have a configuration in which two targets G are provided.

The effect of the film forming apparatus of the present embodiment will be described. Although the vacuum apparatus of the first embodiment has been described, the same effects can be exhibited in other embodiments. By forming a deicing film in a vacuum vessel, it is possible to achieve ultra-high vacuum in a short period of time. In Fig. 7, a change in the degree of vacuum when a degumming film is formed in the film forming chamber is shown. In Fig. 7, 0 to 600 seconds is a gas analysis result of a film forming chamber before the formation of the ruthenium film, and after 600 seconds, a ruthenium film is formed in the film forming chamber.

Before the formation of the decant film, it is the state of the vacuum container (film forming chamber) after being exhausted for 46 hours by the vacuum exhaust device 18 after baking, and the measured value obtained by the ionization vacuum gauge is It is 1.4 × 10 ^-6 Pa. After 600 seconds, a ruthenium film was formed in a vacuum vessel (film formation chamber) by sputtering 0.5 kWh for the target G to which Ti was bonded. The measured value in the film forming chamber obtained by the ionization vacuum gauge after forming the decant film was 2.5 × 10 ^-7 Pa.

In the film forming apparatus of the present embodiment, titanium or tantalum having a high degaussing effect is provided as a target G in a space at a position where the target electrodes 35 to 38 for film formation are mounted. Small target electrode 41. By setting the target electrode 41 to a size that can be disposed in the gap between the target electrodes 35 to 38, since the size of the module is not affected, and the number of modules is not required to be increased, it is possible to suppress the formation. The area occupied by the membrane device. Further, it is possible to sputter the decarburizing material from the target G to the space (film forming chamber) where the MRAM is formed or the back side of the shielding plate, and it is possible to obtain an ultra-high vacuum with a deburring effect.

In the film forming apparatus of the present embodiment, the rotary shutter device is configured so as not to contaminate the other target material from the target G. Since the system can also sputter the rotating gate from the target G, it is possible to increase the sputtering area of the titanium to be a pump. At the target G, sputtering can be performed for a few minutes to 60 minutes at a higher power density than the targets A to D, and the effect can be sufficiently obtained.

The present invention is not limited to the embodiments described above, and various modifications can be made without departing from the spirit and scope of the invention. Changes and variants. Therefore, in order to disclose the scope of the present invention, the following claims are attached.

17A‧‧‧filming chamber

18‧‧‧Vacuum exhaust

19‧‧‧Based gate

21‧‧‧Inside shield

33‧‧‧Substrate holder

34‧‧‧Substrate

35‧‧‧ Target

41‧‧‧ target electrode

51‧‧‧ Container

54‧‧‧Rotary gate device

61‧‧‧Target electrode holder

63‧‧‧Upper shield

65‧‧‧1st gate panel

65b‧‧‧Rotary axis

67‧‧‧2nd gate panel

67b‧‧‧Rotary axis

A~D‧‧‧ target

G‧‧‧ Target

Claims (6)

A film forming apparatus comprising: a plurality of first target electrodes; a first mounting portion capable of mounting a target for film formation; and a substrate holder and a plurality of first targets a substrate is held at a position facing the material electrode; and the second target electrode has a second mounting portion that can be mounted with a target for removing the target and is smaller than the first mounting portion; and the first shutter member. The first target electrode and the second mounting portion are shielded between the first target electrode and the substrate holder. The film forming apparatus according to the first aspect of the invention, wherein the first target electrode is disposed such that the position is at a position of a rectangular corner, and the second target electrode is disposed. Is disposed on the middle line of the two adjacent first target electrode electrodes of the four first target electrode electrodes, and is formed by the two adjacent first target electrode electrodes Connect the line and the outer side. The film forming apparatus according to the second aspect of the invention, wherein the first shutter member is rotatably provided between the first target electrode and the substrate holder, and is provided When rotating, the opening facing the first mounting portion and the opening facing the second mounting portion are opposed to each other. The film forming apparatus according to claim 3, further comprising: a second shutter member that is rotatably provided The first shutter member and the substrate holder are provided with an opening that faces the first mounting portion and an opening that faces the second mounting portion when the rotation is performed. The film forming apparatus according to the fourth aspect of the invention, wherein the opening of the second shutter member facing the second mounting portion is larger in size than the second mounting portion of the first shutter member The opening is bigger. The film forming apparatus according to any one of the first to fifth aspect, wherein the second target electrode is provided in any one of the plurality of first target electrodes. Between the two first target electrodes.