JP2006037119A - Film forming apparatus and film forming method using the same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a target-facing type film-forming apparatus for keeping a high film-forming condition, and to provide a film-forming method using it. <P>SOLUTION: The film-forming apparatus comprises: a vessel 1; first and second electrodes 4 and 5 arranged so as to face each other in the vessel 1; first and second holding means for holding first and second targets 6 and 7 which respectively correspond to the first and second electrodes 4 and 5; power sources 11 and 12 for supplying electrical energy to each of the first and second electrodes; a third holding means for holding a film-forming body 8 in a place other than a portion in which the first and second electrodes 4 and 5 face each other, in the vessel 1; and a gas supply means for supplying a sputtering gas into the vessel 1. At least one target out of the first and the second targets 6 and 7 is made from a substantially insulating material, and at the same time, the power sources 11 and 12 are structured so as to apply negative voltage normally and positive voltage intermittently to at least one of the first and second electrodes 4 and 5. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a facing target type film forming apparatus and a film forming method using the same.

  The following facing target system has been proposed as a film forming apparatus for improving the film forming efficiency.

  That is, a container, first and second electrodes opposed to each other in the container, and first and second targets for holding the first and second targets corresponding to the first and second electrodes, respectively. Second holding means, a power source for supplying electrical energy to the first and second electrodes, respectively, and a film forming body for holding the film-forming body at a place other than the first and second electrode facing portions in the container. 3 and a gas supply means for supplying a sputtering gas into the container, and the power source is configured to apply a high-frequency voltage to the first and second electrodes.

  That is, the first and second targets are opposed to each other, and a negative bias is applied thereto, whereby gamma electrons are reciprocated between the first and second targets, thereby promoting plasma formation and film formation efficiency. It is trying to raise.

As prior art document information related to the invention of this application, for example, Patent Document 1 is known.
JP-A-1-55379

  In the above conventional example, stable sputtering is performed by making the wavelength and phase of the high-frequency voltage applied to the first and second electrodes the same.

  However, it is extremely difficult to make the wavelength and phase of the high-frequency voltage the same, and it is immediately affected by the wiring length to the first and second electrodes, and as a result, the wavelength and phase are shifted, resulting in stable film formation. There was a possibility that could not be.

  Accordingly, an object of the present invention is to enable stable film formation.

  In order to achieve this object, the present invention provides a container, first and second electrodes opposed to each other in the container, and first and second electrodes corresponding to the first and second electrodes, respectively. First and second holding means for holding the second target, a power source for supplying electric energy to the first and second electrodes, respectively, and portions other than the first and second electrode facing portions in the container A third holding means for holding the film-forming body at the location, and a gas supply means for supplying a sputtering gas into the container, wherein at least one of the first and second targets is substantially insulated. In addition, the power source is configured to apply a negative voltage and an intermittent positive voltage to at least one of the first and second electrodes.

  As described above, according to the present invention, the first and second targets are disposed opposite to each other in the container, and the first and second targets are supplied by supplying electric energy from the power source to the first and second electrodes. The target is biased to a negative voltage, and a gamma-electron mirror effect is obtained between the first and second targets to promote plasma formation. As a result, the efficiency of film formation can be increased.

  In addition, since at least one of the first and second targets is a substantial insulator, a positive charge occurs in the insulating target due to the collision of ions, and the negative bias becomes shallow. The repulsive force against the gamma electrons is reduced, that is, the mirror effect is reduced, thereby causing a situation where the plasma is suppressed.

  However, in the present invention, since a positive voltage is intermittently applied to at least one of the first and second electrodes from the power source, the suppression state of the plasma generation can be made small. That is, by intermittently applying a positive voltage to the first and second electrodes, the insulating target is temporarily biased to positive, whereby electrons in the plasma are drawn into the positively biased target, The positive charge state is neutralized.

  Therefore, if a normal negative voltage is applied from the power source to at least one of the first and second electrodes after the positive voltage is applied, the first and second targets are biased to an appropriate negative voltage. As a result, the mirror effect of gamma electrons is exhibited between the first and second targets, and the plasma conversion is promoted, so that high film formation efficiency can be maintained.

  Hereinafter, an embodiment of the present invention will be described with reference to the accompanying drawings.

  In FIG. 1, reference numeral 1 denotes a container capable of creating a substantial vacuum state, and after the exhaust, argon gas or the like is supplied into the container 1 as an example of a sputtering gas.

  In the container 1, magnets 2 and 3 for forming a magnetic field are arranged at a predetermined interval.

  Furthermore, electrodes 4 and 5 are provided in the vicinity of the facing surfaces of the magnets 2 and 3, and silicon oxide targets 6 and 7 are held on the surfaces of these electrodes 4 and 5 by holding means (not shown). Yes.

  In addition, a film forming body 8 such as a substrate is held by a holding means (not shown) at a place outside of these targets 6 and 7. In addition, 9 and 10 are anodes.

  In the above configuration, electrical energy is supplied to the electrodes 4 and 5 from the power sources 11 and 12 as shown in FIG.

  Specifically, each of the power supplies 11 and 12 is configured to apply a negative voltage of minus 500 volts to the first and second electrodes 4 and 5 at all times and a positive voltage of plus 200 volts intermittently. It has become.

  The positive voltage is a substantially rectangular wave, the application time of the negative voltage and the positive voltage is 2: 1 to 100: 1, and the application time of the rectangular wave is 10 to 0.01 μsec.

  When such electrical energy is applied, the gamma electrons separated from the argon atoms in the argon gas supplied into the container 1 are directed to the targets 6 and 7 while being constrained by the magnetic fields of the magnets 2 and 3. However, since the targets 6 and 7 are basically negatively biased, they are repelled by the targets 6 and 7 and are continuously reciprocated between them. This is called the mirror effect.

  Moreover, since such gamma electrons collide with argon atoms, argon ions are generated, and in the vicinity of the targets 6 and 7, the targets 6 and 7 are negatively biased. 7, and as a result, silicon oxide is ejected from the targets 6 and 7, reaching the surface of the film-forming body 8 and forming a thin film of silicon oxide.

  In addition, since the first and second targets 6 and 7 are substantially insulators, when the ions collide, the insulating targets 6 and 7 are positively charged, and the negative bias becomes shallow. The repulsive force with respect to the gamma electrons is reduced, that is, the mirror effect is reduced, thereby causing a situation in which plasma formation is suppressed.

  However, in the present embodiment, since a positive voltage is intermittently applied from the power supplies 11 and 12 to the first and second electrodes 4 and 5, the plasma generation suppression state is made small. I can do it.

  That is, by intermittently applying a positive voltage to the first and second electrodes 4 and 5, the insulating targets 6 and 7 are temporarily biased to positive, whereby electrons in the plasma are biased to this positive. The target is drawn into the target and the positive charge state is neutralized.

  Therefore, if a normal negative voltage is applied from the power source to at least one of the first and second electrodes 4 and 5 after application of the positive voltage, the first and second targets 6 and 7 are appropriate. As a result, a gamma electron mirror effect is exerted between the first and second targets 6 and 7, plasmaization is promoted, and high film formation efficiency can be maintained. .

  As shown in FIG. 1, the positive voltage is a substantially rectangular wave, the application time of the negative voltage and the positive voltage is 2: 1 to 100: 1, and the application time of the rectangular wave is 10 to 0. Since it is set to 01 μs, that is, a short time, even if the first and second targets 6 and 7 are temporarily biased to be positive by the application of the positive voltage, the plasma formation is not stopped.

  Of course, since the application time of the positive voltage is short as described above, even when the pulse voltage is applied to both the power supplies 11 and 12, it is not necessary that the positive voltage in the pulse state is synchronized.

  As described above, according to the present invention, the first and second targets are disposed opposite to each other in the container, and the first and second targets are supplied by supplying electric energy from the power source to the first and second electrodes. The target is biased to a negative voltage, and a gamma-electron mirror effect is obtained between the first and second targets to promote plasma formation. As a result, the efficiency of film formation can be increased.

  In addition, since at least one of the first and second targets is a substantially insulating material, when the ions collide, a positive charge is generated in the insulating target, and the negative bias becomes shallow. The repulsive force with respect to electrons is reduced, that is, the mirror effect is reduced, thereby causing a situation in which plasma formation is suppressed.

  However, in the present invention, since a positive voltage is intermittently applied to at least one of the first and second electrodes from the power source, the suppression state of the plasma generation can be made small. That is, by intermittently applying a positive voltage to the first and second electrodes, the insulating target is temporarily biased to positive, whereby electrons in the plasma are drawn into the positively biased target, The positive charge state is neutralized.

  Therefore, if a normal negative voltage is applied from the power source to at least one of the first and second electrodes after the positive voltage is applied, the first and second targets are biased to an appropriate negative voltage. As a result, the mirror effect of gamma electrons is exhibited between the first and second targets, and the plasma conversion is promoted, so that high film formation efficiency can be maintained.

  Therefore, according to the present invention, even if the target is substantially an insulating material, an efficient film formation can be performed by the opposed target method, and the insulating property to electronic components, electronic substrates, and other materials can be formed. A film can be made.

The block diagram which shows one Embodiment of this invention

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Container 2 Magnet 3 Magnet 4 Electrode 5 Electrode 6 Target 7 Target 8 Film-forming body 9 Anode 10 Anode 11 Power supply 12 Power supply

Claims (8)

A container, first and second electrodes opposed to each other in the container, and first and second holding the first and second targets corresponding to the first and second electrodes, respectively. Holding means, a power source for supplying electrical energy to the first and second electrodes, respectively, and a third body for holding the film-forming body in a place other than the first and second electrode facing portions in the container. A holding means and a gas supply means for supplying a sputtering gas into the container, wherein at least one of the first and second targets is a substantially insulating material, and the power A film forming apparatus configured to apply a negative voltage to at least one of the two electrodes at all times and a positive voltage intermittently. 2. The configuration according to claim 1, wherein the first and second electrodes are configured to hold a substantially insulating target on an electrode to which a negative voltage is constantly applied from a power source and a positive voltage is intermittently applied. Deposition device. The film forming apparatus according to claim 2, wherein the positive voltage is a substantially rectangular wave, and the application time of the negative voltage and the positive voltage is 2: 1 to 100: 1. The film forming apparatus according to claim 3, wherein the application time of the rectangular wave is 10 to 0.01 μsec. The first and second targets are held corresponding to the first and second electrodes opposed to each other in the container, and formed in a place other than the first and second electrode facing portions in the container. A film body is held, a sputtering gas is supplied into the container, at least one of the first and second targets is made a substantial insulator, and at least one of the first and second electrodes A film forming method in which a negative voltage is always applied from a power source and a positive voltage is intermittently applied to form a film on the surface of the film forming body. The film formation according to claim 5, wherein a substantially insulating target is held by an electrode to which a negative voltage is constantly applied from a power source and an intermittently positive voltage is applied, from among the first and second electrodes. Method. The film forming method according to claim 6, wherein the positive voltage is substantially a rectangular wave, and the application time of the negative voltage and the positive voltage is 2: 1 to 100: 1. The film forming method according to claim 7, wherein the application time of the rectangular wave is 10 to 0.01 μsec.

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