TWI500762B - Cleaning composition for electronic devices - Google Patents
Cleaning composition for electronic devices Download PDFInfo
- Publication number
- TWI500762B TWI500762B TW100117537A TW100117537A TWI500762B TW I500762 B TWI500762 B TW I500762B TW 100117537 A TW100117537 A TW 100117537A TW 100117537 A TW100117537 A TW 100117537A TW I500762 B TWI500762 B TW I500762B
- Authority
- TW
- Taiwan
- Prior art keywords
- group
- acid
- methyl
- cleaning liquid
- liquid composition
- Prior art date
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- 238000004140 cleaning Methods 0.000 title claims description 74
- 239000000203 mixture Substances 0.000 title claims description 62
- 239000007788 liquid Substances 0.000 claims description 45
- -1 phosphoric acid compound Chemical class 0.000 claims description 41
- 239000000758 substrate Substances 0.000 claims description 38
- 229920001577 copolymer Polymers 0.000 claims description 20
- 239000002253 acid Substances 0.000 claims description 17
- 150000003839 salts Chemical class 0.000 claims description 16
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 15
- 125000001841 imino group Chemical group [H]N=* 0.000 claims description 13
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 claims description 12
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 12
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 claims description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 10
- KAESVJOAVNADME-UHFFFAOYSA-N 1H-pyrrole Natural products C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 claims description 9
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 8
- 125000000217 alkyl group Chemical group 0.000 claims description 8
- 150000007514 bases Chemical class 0.000 claims description 8
- 125000004432 carbon atom Chemical group C* 0.000 claims description 8
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 7
- 239000003495 polar organic solvent Substances 0.000 claims description 7
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 claims description 6
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims description 6
- BAVYZALUXZFZLV-UHFFFAOYSA-N Methylamine Chemical compound NC BAVYZALUXZFZLV-UHFFFAOYSA-N 0.000 claims description 6
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 claims description 6
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 claims description 6
- UAOMVDZJSHZZME-UHFFFAOYSA-N diisopropylamine Chemical compound CC(C)NC(C)C UAOMVDZJSHZZME-UHFFFAOYSA-N 0.000 claims description 6
- 229940073455 tetraethylammonium hydroxide Drugs 0.000 claims description 6
- LRGJRHZIDJQFCL-UHFFFAOYSA-M tetraethylazanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CC LRGJRHZIDJQFCL-UHFFFAOYSA-M 0.000 claims description 6
- 229920002125 Sokalan® Polymers 0.000 claims description 5
- 125000003277 amino group Chemical group 0.000 claims description 5
- VDZOOKBUILJEDG-UHFFFAOYSA-M tetrabutylammonium hydroxide Chemical compound [OH-].CCCC[N+](CCCC)(CCCC)CCCC VDZOOKBUILJEDG-UHFFFAOYSA-M 0.000 claims description 5
- HXKKHQJGJAFBHI-UHFFFAOYSA-N 1-aminopropan-2-ol Chemical compound CC(O)CN HXKKHQJGJAFBHI-UHFFFAOYSA-N 0.000 claims description 4
- CJLVUYQFKQNEJT-UHFFFAOYSA-N CN([CH-][NH+](C)C1)C1=O Chemical compound CN([CH-][NH+](C)C1)C1=O CJLVUYQFKQNEJT-UHFFFAOYSA-N 0.000 claims description 4
- QUSNBJAOOMFDIB-UHFFFAOYSA-N Ethylamine Chemical compound CCN QUSNBJAOOMFDIB-UHFFFAOYSA-N 0.000 claims description 4
- SIKJAQJRHWYJAI-UHFFFAOYSA-N Indole Chemical compound C1=CC=C2NC=CC2=C1 SIKJAQJRHWYJAI-UHFFFAOYSA-N 0.000 claims description 4
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 claims description 4
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 4
- 125000003118 aryl group Chemical group 0.000 claims description 4
- JQVDAXLFBXTEQA-UHFFFAOYSA-N dibutylamine Chemical compound CCCCNCCCC JQVDAXLFBXTEQA-UHFFFAOYSA-N 0.000 claims description 4
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 claims description 4
- 125000000623 heterocyclic group Chemical group 0.000 claims description 4
- NAQMVNRVTILPCV-UHFFFAOYSA-N hexane-1,6-diamine Chemical compound NCCCCCCN NAQMVNRVTILPCV-UHFFFAOYSA-N 0.000 claims description 4
- HJOVHMDZYOCNQW-UHFFFAOYSA-N isophorone Chemical compound CC1=CC(=O)CC(C)(C)C1 HJOVHMDZYOCNQW-UHFFFAOYSA-N 0.000 claims description 4
- JJWLVOIRVHMVIS-UHFFFAOYSA-N isopropylamine Chemical compound CC(C)N JJWLVOIRVHMVIS-UHFFFAOYSA-N 0.000 claims description 4
- 239000004973 liquid crystal related substance Substances 0.000 claims description 4
- 150000002923 oximes Chemical class 0.000 claims description 4
- NBIIXXVUZAFLBC-UHFFFAOYSA-N phosphoric acid Substances OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 4
- LPSKDVINWQNWFE-UHFFFAOYSA-M tetrapropylazanium;hydroxide Chemical compound [OH-].CCC[N+](CCC)(CCC)CCC LPSKDVINWQNWFE-UHFFFAOYSA-M 0.000 claims description 4
- GETQZCLCWQTVFV-UHFFFAOYSA-N trimethylamine Chemical compound CN(C)C GETQZCLCWQTVFV-UHFFFAOYSA-N 0.000 claims description 4
- MBBOMCVGYCRMEA-UHFFFAOYSA-N tryptophol Chemical compound C1=CC=C2C(CCO)=CNC2=C1 MBBOMCVGYCRMEA-UHFFFAOYSA-N 0.000 claims description 4
- DBVJJBKOTRCVKF-UHFFFAOYSA-N Etidronic acid Chemical compound OP(=O)(O)C(O)(C)P(O)(O)=O DBVJJBKOTRCVKF-UHFFFAOYSA-N 0.000 claims description 3
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical class OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 claims description 3
- 229910052783 alkali metal Inorganic materials 0.000 claims description 3
- 150000001340 alkali metals Chemical class 0.000 claims description 3
- 125000003545 alkoxy group Chemical group 0.000 claims description 3
- 125000002704 decyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 claims description 3
- 229940113088 dimethylacetamide Drugs 0.000 claims description 3
- 125000002768 hydroxyalkyl group Chemical group 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims description 3
- KQIXMZWXFFHRAQ-UHFFFAOYSA-N 1-(2-hydroxybutylamino)butan-2-ol Chemical compound CCC(O)CNCC(O)CC KQIXMZWXFFHRAQ-UHFFFAOYSA-N 0.000 claims description 2
- GEWWCWZGHNIUBW-UHFFFAOYSA-N 1-(4-nitrophenyl)propan-2-one Chemical compound CC(=O)CC1=CC=C([N+]([O-])=O)C=C1 GEWWCWZGHNIUBW-UHFFFAOYSA-N 0.000 claims description 2
- GIAFURWZWWWBQT-UHFFFAOYSA-N 2-(2-aminoethoxy)ethanol Chemical compound NCCOCCO GIAFURWZWWWBQT-UHFFFAOYSA-N 0.000 claims description 2
- MIJDSYMOBYNHOT-UHFFFAOYSA-N 2-(ethylamino)ethanol Chemical compound CCNCCO MIJDSYMOBYNHOT-UHFFFAOYSA-N 0.000 claims description 2
- BFSVOASYOCHEOV-UHFFFAOYSA-N 2-diethylaminoethanol Chemical compound CCN(CC)CCO BFSVOASYOCHEOV-UHFFFAOYSA-N 0.000 claims description 2
- XYJLPCAKKYOLGU-UHFFFAOYSA-N 2-phosphonoethylphosphonic acid Chemical compound OP(O)(=O)CCP(O)(O)=O XYJLPCAKKYOLGU-UHFFFAOYSA-N 0.000 claims description 2
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 claims description 2
- VIZORQUEIQEFRT-UHFFFAOYSA-N Diethyl adipate Chemical compound CCOC(=O)CCCCC(=O)OCC VIZORQUEIQEFRT-UHFFFAOYSA-N 0.000 claims description 2
- UEEJHVSXFDXPFK-UHFFFAOYSA-N N-dimethylaminoethanol Chemical compound CN(C)CCO UEEJHVSXFDXPFK-UHFFFAOYSA-N 0.000 claims description 2
- OPKOKAMJFNKNAS-UHFFFAOYSA-N N-methylethanolamine Chemical compound CNCCO OPKOKAMJFNKNAS-UHFFFAOYSA-N 0.000 claims description 2
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical group O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 claims description 2
- ABLZXFCXXLZCGV-UHFFFAOYSA-N Phosphorous acid Chemical compound OP(O)=O ABLZXFCXXLZCGV-UHFFFAOYSA-N 0.000 claims description 2
- 239000001089 [(2R)-oxolan-2-yl]methanol Substances 0.000 claims description 2
- QYLNGILICSHHBY-UHFFFAOYSA-N [N].CCO.CCO.CCO Chemical compound [N].CCO.CCO.CCO QYLNGILICSHHBY-UHFFFAOYSA-N 0.000 claims description 2
- 229910052784 alkaline earth metal Inorganic materials 0.000 claims description 2
- 150000001342 alkaline earth metals Chemical class 0.000 claims description 2
- 125000003282 alkyl amino group Chemical group 0.000 claims description 2
- 239000002585 base Substances 0.000 claims description 2
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims description 2
- 125000004181 carboxyalkyl group Chemical group 0.000 claims description 2
- OEYIOHPDSNJKLS-UHFFFAOYSA-N choline Chemical compound C[N+](C)(C)CCO OEYIOHPDSNJKLS-UHFFFAOYSA-N 0.000 claims description 2
- 229960001231 choline Drugs 0.000 claims description 2
- 125000004093 cyano group Chemical group *C#N 0.000 claims description 2
- 125000000753 cycloalkyl group Chemical group 0.000 claims description 2
- YMHQVDAATAEZLO-UHFFFAOYSA-N cyclohexane-1,1-diamine Chemical compound NC1(N)CCCCC1 YMHQVDAATAEZLO-UHFFFAOYSA-N 0.000 claims description 2
- 229960002887 deanol Drugs 0.000 claims description 2
- HPNMFZURTQLUMO-UHFFFAOYSA-N diethylamine Chemical compound CCNCC HPNMFZURTQLUMO-UHFFFAOYSA-N 0.000 claims description 2
- LVTYICIALWPMFW-UHFFFAOYSA-N diisopropanolamine Chemical class CC(O)CNCC(C)O LVTYICIALWPMFW-UHFFFAOYSA-N 0.000 claims description 2
- 229940043279 diisopropylamine Drugs 0.000 claims description 2
- DUYCTCQXNHFCSJ-UHFFFAOYSA-N dtpmp Chemical compound OP(=O)(O)CN(CP(O)(O)=O)CCN(CP(O)(=O)O)CCN(CP(O)(O)=O)CP(O)(O)=O DUYCTCQXNHFCSJ-UHFFFAOYSA-N 0.000 claims description 2
- 150000002169 ethanolamines Chemical class 0.000 claims description 2
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims description 2
- 125000005843 halogen group Chemical group 0.000 claims description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 2
- PZOUSPYUWWUPPK-UHFFFAOYSA-N indole Natural products CC1=CC=CC2=C1C=CN2 PZOUSPYUWWUPPK-UHFFFAOYSA-N 0.000 claims description 2
- RKJUIXBNRJVNHR-UHFFFAOYSA-N indolenine Natural products C1=CC=C2CC=NC2=C1 RKJUIXBNRJVNHR-UHFFFAOYSA-N 0.000 claims description 2
- 239000011159 matrix material Substances 0.000 claims description 2
- CRVGTESFCCXCTH-UHFFFAOYSA-N methyl diethanolamine Chemical compound OCCN(C)CCO CRVGTESFCCXCTH-UHFFFAOYSA-N 0.000 claims description 2
- 239000000178 monomer Substances 0.000 claims description 2
- VTVXDZVCSHVLIS-UHFFFAOYSA-N n-ethyl-7h-purin-2-amine Chemical compound N1C(NCC)=NC=C2N=CN=C21 VTVXDZVCSHVLIS-UHFFFAOYSA-N 0.000 claims description 2
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 claims description 2
- 229920001444 polymaleic acid Polymers 0.000 claims description 2
- BSYVTEYKTMYBMK-UHFFFAOYSA-N tetrahydrofurfuryl alcohol Chemical compound OCC1CCCO1 BSYVTEYKTMYBMK-UHFFFAOYSA-N 0.000 claims description 2
- IMFACGCPASFAPR-UHFFFAOYSA-N tributylamine Chemical compound CCCCN(CCCC)CCCC IMFACGCPASFAPR-UHFFFAOYSA-N 0.000 claims description 2
- RKBCYCFRFCNLTO-UHFFFAOYSA-N triisopropylamine Chemical compound CC(C)N(C(C)C)C(C)C RKBCYCFRFCNLTO-UHFFFAOYSA-N 0.000 claims description 2
- DIIIISSCIXVANO-UHFFFAOYSA-N 1,2-Dimethylhydrazine Chemical compound CNNC DIIIISSCIXVANO-UHFFFAOYSA-N 0.000 claims 1
- VXNZUUAINFGPBY-UHFFFAOYSA-N 1-Butene Chemical compound CCC=C VXNZUUAINFGPBY-UHFFFAOYSA-N 0.000 claims 1
- RTBFRGCFXZNCOE-UHFFFAOYSA-N 1-methylsulfonylpiperidin-4-one Chemical compound CS(=O)(=O)N1CCC(=O)CC1 RTBFRGCFXZNCOE-UHFFFAOYSA-N 0.000 claims 1
- AHLWZBVXSWOPPL-RGYGYFBISA-N 20-deoxy-20-oxophorbol 12-myristate 13-acetate Chemical compound C([C@]1(O)C(=O)C(C)=C[C@H]1[C@@]1(O)[C@H](C)[C@H]2OC(=O)CCCCCCCCCCCCC)C(C=O)=C[C@H]1[C@H]1[C@]2(OC(C)=O)C1(C)C AHLWZBVXSWOPPL-RGYGYFBISA-N 0.000 claims 1
- HCUARRIEZVDMPT-UHFFFAOYSA-N Indole-2-carboxylic acid Chemical compound C1=CC=C2NC(C(=O)O)=CC2=C1 HCUARRIEZVDMPT-UHFFFAOYSA-N 0.000 claims 1
- VXMCDGDNIVYMCX-UHFFFAOYSA-N NN.CCCCCCCCCCCCN Chemical compound NN.CCCCCCCCCCCCN VXMCDGDNIVYMCX-UHFFFAOYSA-N 0.000 claims 1
- 241001602688 Pama Species 0.000 claims 1
- YSMRWXYRXBRSND-UHFFFAOYSA-N TOTP Chemical compound CC1=CC=CC=C1OP(=O)(OC=1C(=CC=CC=1)C)OC1=CC=CC=C1C YSMRWXYRXBRSND-UHFFFAOYSA-N 0.000 claims 1
- 150000003863 ammonium salts Chemical class 0.000 claims 1
- JFCQEDHGNNZCLN-UHFFFAOYSA-N anhydrous glutaric acid Natural products OC(=O)CCCC(O)=O JFCQEDHGNNZCLN-UHFFFAOYSA-N 0.000 claims 1
- IAQRGUVFOMOMEM-UHFFFAOYSA-N butene Natural products CC=CC IAQRGUVFOMOMEM-UHFFFAOYSA-N 0.000 claims 1
- 229910052799 carbon Inorganic materials 0.000 claims 1
- HQFQTTNMBUPQAY-UHFFFAOYSA-N cyclobutylhydrazine Chemical compound NNC1CCC1 HQFQTTNMBUPQAY-UHFFFAOYSA-N 0.000 claims 1
- UYMKPFRHYYNDTL-UHFFFAOYSA-N ethenamine Chemical compound NC=C UYMKPFRHYYNDTL-UHFFFAOYSA-N 0.000 claims 1
- 125000003983 fluorenyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3CC12)* 0.000 claims 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 claims 1
- 150000004702 methyl esters Chemical class 0.000 claims 1
- AOHJOMMDDJHIJH-UHFFFAOYSA-N propylenediamine Chemical compound CC(N)CN AOHJOMMDDJHIJH-UHFFFAOYSA-N 0.000 claims 1
- DZLFLBLQUQXARW-UHFFFAOYSA-N tetrabutylammonium Chemical compound CCCC[N+](CCCC)(CCCC)CCCC DZLFLBLQUQXARW-UHFFFAOYSA-N 0.000 claims 1
- 230000008901 benefit Effects 0.000 description 26
- 239000011521 glass Substances 0.000 description 21
- 229910052751 metal Inorganic materials 0.000 description 18
- 239000002184 metal Substances 0.000 description 18
- 239000000356 contaminant Substances 0.000 description 16
- 239000002245 particle Substances 0.000 description 12
- 239000010949 copper Substances 0.000 description 11
- 239000010410 layer Substances 0.000 description 11
- 238000005260 corrosion Methods 0.000 description 9
- 230000007797 corrosion Effects 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-O ammonium group Chemical group [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 229910000881 Cu alloy Inorganic materials 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 229910021642 ultra pure water Inorganic materials 0.000 description 4
- 239000012498 ultrapure water Substances 0.000 description 4
- 150000001412 amines Chemical class 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 3
- 239000011146 organic particle Substances 0.000 description 3
- 239000002957 persistent organic pollutant Substances 0.000 description 3
- 239000002516 radical scavenger Substances 0.000 description 3
- 239000007921 spray Substances 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- 241000208340 Araliaceae Species 0.000 description 2
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 description 2
- 235000003140 Panax quinquefolius Nutrition 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 230000003139 buffering effect Effects 0.000 description 2
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 239000003599 detergent Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- LNTHITQWFMADLM-UHFFFAOYSA-N gallic acid Chemical compound OC(=O)C1=CC(O)=C(O)C(O)=C1 LNTHITQWFMADLM-UHFFFAOYSA-N 0.000 description 2
- 235000008434 ginseng Nutrition 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000011976 maleic acid Substances 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000002791 soaking Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 125000001424 substituent group Chemical group 0.000 description 2
- CCFAKBRKTKVJPO-UHFFFAOYSA-N 1-anthroic acid Chemical compound C1=CC=C2C=C3C(C(=O)O)=CC=CC3=CC2=C1 CCFAKBRKTKVJPO-UHFFFAOYSA-N 0.000 description 1
- KFZMGEQAYNKOFK-UHFFFAOYSA-N 2-propanol Substances CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 1
- LBOQZDCAYYCJBU-UHFFFAOYSA-N 4-methyl-2h-benzotriazole;5-methyl-2h-benzotriazole Chemical compound C1=C(C)C=CC2=NNN=C21.CC1=CC=CC2=NNN=C12 LBOQZDCAYYCJBU-UHFFFAOYSA-N 0.000 description 1
- LKYCXBONRPBYSS-UHFFFAOYSA-N C1CCC1.C1=CC=CC2=CC3=CC=CC=C3C=C12 Chemical compound C1CCC1.C1=CC=CC2=CC3=CC=CC=C3C=C12 LKYCXBONRPBYSS-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- SLINHMUFWFWBMU-UHFFFAOYSA-N Triisopropanolamine Chemical class CC(O)CN(CC(C)O)CC(C)O SLINHMUFWFWBMU-UHFFFAOYSA-N 0.000 description 1
- PQNAAOKRFYXTFZ-UHFFFAOYSA-N [PH2](=O)C(CC(=O)O)(CCC(=O)O)C(=O)O Chemical compound [PH2](=O)C(CC(=O)O)(CCC(=O)O)C(=O)O PQNAAOKRFYXTFZ-UHFFFAOYSA-N 0.000 description 1
- 239000003929 acidic solution Substances 0.000 description 1
- BAPJBEWLBFYGME-UHFFFAOYSA-N acrylic acid methyl ester Natural products COC(=O)C=C BAPJBEWLBFYGME-UHFFFAOYSA-N 0.000 description 1
- 125000005210 alkyl ammonium group Chemical group 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052792 caesium Inorganic materials 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 description 1
- XTDYIOOONNVFMA-UHFFFAOYSA-N dimethyl pentanedioate Chemical compound COC(=O)CCCC(=O)OC XTDYIOOONNVFMA-UHFFFAOYSA-N 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- JRBPAEWTRLWTQC-UHFFFAOYSA-N dodecylamine Chemical compound CCCCCCCCCCCCN JRBPAEWTRLWTQC-UHFFFAOYSA-N 0.000 description 1
- NFDRPXJGHKJRLJ-UHFFFAOYSA-N edtmp Chemical compound OP(O)(=O)CN(CP(O)(O)=O)CCN(CP(O)(O)=O)CP(O)(O)=O NFDRPXJGHKJRLJ-UHFFFAOYSA-N 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 229940074391 gallic acid Drugs 0.000 description 1
- 235000004515 gallic acid Nutrition 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000010954 inorganic particle Substances 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 239000002736 nonionic surfactant Substances 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 150000002903 organophosphorus compounds Chemical class 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- 239000004584 polyacrylic acid Substances 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 150000003141 primary amines Chemical class 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 229910052701 rubidium Inorganic materials 0.000 description 1
- 150000003335 secondary amines Chemical class 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- 150000005846 sugar alcohols Chemical class 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 150000003512 tertiary amines Chemical class 0.000 description 1
- 125000003396 thiol group Chemical group [H]S* 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/37—Polymers
- C11D3/3746—Macromolecular compounds obtained by reactions only involving carbon-to-carbon unsaturated bonds
- C11D3/3757—(Co)polymerised carboxylic acids, -anhydrides, -esters in solid and liquid compositions
- C11D3/3765—(Co)polymerised carboxylic acids, -anhydrides, -esters in solid and liquid compositions in liquid compositions
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
- C11D7/04—Water-soluble compounds
- C11D7/06—Hydroxides
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3218—Alkanolamines or alkanolimines
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3281—Heterocyclic compounds
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/36—Organic compounds containing phosphorus
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
Landscapes
- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Wood Science & Technology (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Detergent Compositions (AREA)
Description
本申請案請求在2010年5月19日提出之韓國專利申請案第10-2010-0046886號的權益,其在此全部併入本申請案作為參考。The present application claims the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the present disclosure.
本發明關於一種用於包括液晶顯示器、電漿顯示器、可撓性顯示器等之平板顯示器(FPD)用基板的清潔液組成物。The present invention relates to a cleaning liquid composition for a substrate for a flat panel display (FPD) including a liquid crystal display, a plasma display, a flexible display or the like.
如同半導體裝置,一般以液晶顯示器例示之FPD係經膜形成、照相曝光、線路蝕刻等而製造。在此程序期間,尺寸不大於1微米之粒子,如各種有機或無機材料,本身可能附著基板表面,且造成基板被污染。在基板以此污染物仍附著之狀態接受後續程序的情形可能發生膜之針孔或坑、及線路切削或橋接,而戲劇性地降低產品之良率。因此在各程序之間實行用於移除污染物之清潔程序,且已引介各種清潔液。Like a semiconductor device, FPD which is exemplified by a liquid crystal display is generally manufactured by film formation, photographic exposure, line etching, or the like. During this procedure, particles having a size of no more than 1 micron, such as various organic or inorganic materials, may themselves adhere to the surface of the substrate and cause contamination of the substrate. In the case where the substrate is subjected to a subsequent procedure in a state in which the contaminant remains attached, pinholes or pits of the film, and line cutting or bridging may occur, and the yield of the product is drastically reduced. Therefore, a cleaning procedure for removing contaminants is carried out between the programs, and various cleaning liquids have been introduced.
韓國專利申請案第10-2008-7003568號揭示一種用於半導體裝置之清除劑組成物,其係包含有機胺、有機膦酸、線形糖醇,及其餘為水。然而該清除劑係有限地用於半導體裝置,因此難以應用於各種領域。此外,該清除劑無法防止銅(Cu)及Cu合金製線路被腐蝕,因此難以應用於包括Cu或Cu合金製線路的FPD裝置。Korean Patent Application No. 10-2008-7003568 discloses a scavenger composition for a semiconductor device comprising an organic amine, an organic phosphonic acid, a linear sugar alcohol, and the balance being water. However, the scavenger is limitedly used in semiconductor devices, and thus it is difficult to apply to various fields. Further, the scavenger cannot prevent copper (Cu) and Cu alloy wiring from being corroded, and thus it is difficult to apply to an FPD device including a Cu or Cu alloy wiring.
韓國專利第10-0503231號揭示一種具有防止如鋁(Al)、Cu等半導體及TFT-LCD用金屬被腐蝕之能力的清潔劑組成物,其係包含特定之烷醇胺化合物、有機溶劑、鉗合劑化合物、非離子性界面活性劑、及水。然而該清潔劑組成物因為使用僅烷醇胺與有機溶劑之組合故移除有機污染物與粒子的能力不良,又為聚羥基苯鉗合劑化合物的兒茶酚或五倍子酸在長期使用時可能造成沉積問題,所以出問題。Korean Patent No. 10-0503231 discloses a detergent composition having the ability to prevent corrosion of a metal such as aluminum (Al), Cu, or the like, and a metal for TFT-LCD, which comprises a specific alkanolamine compound, an organic solvent, and a pliers. Mixture compounds, nonionic surfactants, and water. However, the detergent composition may have a poor ability to remove organic contaminants and particles by using only a combination of an alkanolamine and an organic solvent, and may be caused by long-term use of a catechol or gallic acid of a polyhydroxybenzene clamp compound. Deposition problems, so there is a problem.
韓國專利申請案第10-2006-7015165號揭示一種用於半導體裝置之基板清潔液,其係包含有機酸、有機鹼成分、界面活性劑、及水,且pH為1.5至小於6.5。然而因為該清潔液為酸性溶液,其在起初清潔階段不足以移除不大於1微米之非常小的有機或無機粒子。Korean Patent Application No. 10-2006-7015165 discloses a substrate cleaning liquid for a semiconductor device which comprises an organic acid, an organic alkali component, a surfactant, and water, and has a pH of from 1.5 to less than 6.5. However, since the cleaning solution is an acidic solution, it is insufficient in the initial cleaning stage to remove very small organic or inorganic particles of no more than 1 micron.
因此本發明已切記以上相關技藝所遭遇之問題,且本發明之一個目的為提供一種清潔液組成物,其移除在製造FPD期間污染玻璃基板或金屬層之有機污染物或粒子的能力高,且防止在FPD用基板上所形成之Al、Al合金、Cu、Cu合金等金屬線路被腐蝕的能力亦高。Accordingly, the present invention has been made in mind the problems encountered in the above related art, and it is an object of the present invention to provide a cleaning liquid composition which has high ability to remove organic contaminants or particles contaminating a glass substrate or a metal layer during the manufacture of FPD, Further, the ability to prevent metal lines such as Al, Al alloy, Cu, and Cu alloy formed on the FPD substrate from being corroded is also high.
本發明之一個態樣為提供一種清潔液組成物,其按組成物之總重量計係包含0.05~20重量%之鹼性化合物、0.1~40重量%之水溶性極性有機溶劑、0.01~10重量%之有機磷酸化合物、0.01~10重量%之多羧酸系共聚物、0.001~10重量%之烷醇胺鹽、0.001~10重量%之吡咯系化合物,及其餘為水。One aspect of the present invention provides a cleaning liquid composition comprising 0.05 to 20% by weight of a basic compound, 0.1 to 40% by weight of a water-soluble polar organic solvent, and 0.01 to 10 parts by weight based on the total weight of the composition. % organic phosphate compound, 0.01 to 10% by weight of a polycarboxylic acid copolymer, 0.001 to 10% by weight of an alkanolamine salt, 0.001 to 10% by weight of a pyrrole compound, and the balance being water.
本發明之另一個態樣為提供一種製造液晶顯示器用矩陣基板之方法,其係包含使用以上之清潔液組成物清潔該基板。Another aspect of the present invention provides a method of manufacturing a matrix substrate for a liquid crystal display, which comprises cleaning the substrate using the above cleaning liquid composition.
以下詳述本發明。The invention is described in detail below.
依照本發明,一種清潔液組成物按組成物之總重量計係包含0.05~20重量%之鹼性化合物、0.1~40重量%之水溶性極性有機溶劑、0.01~10重量%之有機磷酸化合物、0.01~10重量%之多羧酸系共聚物、0.001~10重量%之烷醇胺鹽、0.001~10重量%之吡咯系化合物,及其餘為水。According to the present invention, a cleaning liquid composition comprises 0.05 to 20% by weight of a basic compound, 0.1 to 40% by weight of a water-soluble polar organic solvent, 0.01 to 10% by weight of an organic phosphoric acid compound, based on the total weight of the composition. 0.01 to 10% by weight of the polycarboxylic acid copolymer, 0.001 to 10% by weight of the alkanolamine salt, 0.001 to 10% by weight of the pyrrole compound, and the balance being water.
依照本發明之清潔液組成物所含有之鹼性化合物可包括四級銨鹽化合物,如氫氧化四甲銨(TMAH)、氫氧化四乙銨(TEAH)、氫氧化四丙銨(TPAH)、氫氧化四丁銨(TBAH)等;有機鹼性化合物,其係包括一級胺,如甲胺、乙胺、單異丙胺等,二級胺,如二乙胺、二異丙胺、二丁胺等,三級胺,如三甲胺、三乙胺、三異丙胺、三丁胺等;烷醇胺,如膽鹼、單乙醇胺、二乙醇胺、2-胺基乙醇、2-(乙胺基)乙醇、2-(甲胺基)乙醇、N-甲基二乙醇胺、二甲胺基乙醇、二乙胺基乙醇、氮基三乙醇、2-(2-胺基乙氧基)乙醇、1-胺基-2-丙醇、三乙醇胺、單丙醇胺、二丁醇胺等,其可單獨或以二者或以上之混合物使用。The basic compound contained in the cleaning liquid composition according to the present invention may include a quaternary ammonium salt compound such as tetramethylammonium hydroxide (TMAH), tetraethylammonium hydroxide (TEAH), tetrapropylammonium hydroxide (TPAH), Tetrabutylammonium hydroxide (TBAH) or the like; an organic basic compound including a primary amine such as methylamine, ethylamine, monoisopropylamine, etc., a secondary amine such as diethylamine, diisopropylamine, dibutylamine, etc. , tertiary amines such as trimethylamine, triethylamine, triisopropylamine, tributylamine, etc.; alkanolamines such as choline, monoethanolamine, diethanolamine, 2-aminoethanol, 2-(ethylamino)ethanol , 2-(methylamino)ethanol, N-methyldiethanolamine, dimethylaminoethanol, diethylaminoethanol, nitrogen triethanol, 2-(2-aminoethoxy)ethanol, 1-amine The base-2-propanol, triethanolamine, monopropanolamine, dibutanolamine or the like may be used singly or in combination of two or more thereof.
該鹼性化合物可以按組成物之總重量計為0.05~20重量%,且較佳為0.1~10重量%之量使用。如果該鹼性化合物之量小於0.05重量%,則無法充分地移除微粒、有機污染物與無機污染物。相反地,如果其量超過20重量%,則組成物之pH可能增加,因此金屬線路腐蝕可能增加。The basic compound may be used in an amount of from 0.05 to 20% by weight, and preferably from 0.1 to 10% by weight, based on the total mass of the composition. If the amount of the basic compound is less than 0.05% by weight, particulates, organic contaminants and inorganic contaminants cannot be sufficiently removed. Conversely, if the amount exceeds 20% by weight, the pH of the composition may increase, and thus metal line corrosion may increase.
依照本發明之清潔液組成物所含有之水溶性極性有機溶劑可包括N-甲基吡咯啶酮(NMP)、1,3-二甲基-2-四氫咪唑酮(DMI)、二甲基亞碸(DMSO)、二甲基乙醯胺(DMAc)、二甲基甲醯胺(DMF)、四氫糠醇、異佛酮、己二酸二乙酯、戊二酸二甲酯、環丁碸、γ-丁內酯(GBL)等,其可單獨或以二者或以上之混合物使用。The water-soluble polar organic solvent contained in the cleaning liquid composition according to the present invention may include N-methylpyrrolidone (NMP), 1,3-dimethyl-2-tetrahydroimidazolidone (DMI), dimethyl group. Acetone (DMSO), dimethylacetamide (DMAc), dimethylformamide (DMF), tetrahydrofurfuryl alcohol, isophorone, diethyl adipate, dimethyl glutarate, cyclobutane Anthracene, γ-butyrolactone (GBL), etc., which may be used singly or in a mixture of two or more thereof.
該水溶性極性有機溶劑可以按組成物之總重量計為0.1~40重量%,且較佳為0.5~20重量%之量使用。如果該水溶性極性有機溶劑之量小於0.1重量%,則因溶劑增加而無法預期清潔液組成物溶解污染物的能力增加。相反地,如果其量超過40重量%則減損經濟益處,且無法預期環境優點。The water-soluble polar organic solvent may be used in an amount of 0.1 to 40% by weight, and preferably 0.5 to 20% by weight, based on the total mass of the composition. If the amount of the water-soluble polar organic solvent is less than 0.1% by weight, the ability of the cleaning liquid composition to dissolve the contaminant cannot be expected to increase due to an increase in the solvent. Conversely, if the amount exceeds 40% by weight, the economic benefit is degraded and environmental advantages cannot be expected.
依照本發明之清潔液組成物所含有之有機磷酸化合物非常有效地從玻璃基板之上表面移除有機污染物或粒子,且亦控制清潔液組成物之總pH,因此對於防止金屬被腐蝕及呈現清潔效果均扮演重要之角色。The organophosphoric acid compound contained in the cleaning liquid composition according to the present invention is very effective in removing organic contaminants or particles from the upper surface of the glass substrate, and also controls the total pH of the cleaning liquid composition, thereby preventing corrosion and presentation of the metal Cleaning effects play an important role.
該有機磷酸化合物可包括胺基參(亞甲基膦酸)、亞乙基二膦酸、1-羥基亞乙基-1,1-二膦酸、1-羥基亞丙基-1,1-二膦酸、1-羥基亞丁基-1,1-二膦酸、乙胺基貳(亞甲基膦酸)、1,2-丙二胺四(亞甲基膦酸)、十二碳胺基貳(亞甲基膦酸)、硝基參(亞甲基膦酸)、乙二胺貳(亞甲基膦酸)、乙二胺四(亞甲基膦酸)、己二胺四(亞甲基膦酸)、二伸乙三胺五(亞甲基膦酸)、環己烷二胺四(亞甲基膦酸)、羥基膦醯基乙酸、與2-膦醯基-丁烷-1,2,4-三羧酸,其可單獨或以二者或以上之混合物使用。The organophosphorus compound may include an amine ginseng (methylene phosphonic acid), ethylene diphosphonic acid, 1-hydroxyethylidene-1,1-diphosphonic acid, 1-hydroxypropylidene-1,1- Diphosphonic acid, 1-hydroxybutylidene-1,1-diphosphonic acid, ethylaminopurine (methylene phosphonic acid), 1,2-propylenediaminetetrakis (methylenephosphonic acid), dodecylamine Base (methylene phosphonic acid), nitrosyl (methylene phosphonic acid), ethylene diamine oxime (methylene phosphonic acid), ethylene diamine tetra (methylene phosphonic acid), hexamethylene diamine tetra ( Methylene phosphonic acid), diethylenetriamine penta (methylene phosphonic acid), cyclohexanediamine tetra (methylene phosphonic acid), hydroxyphosphoninoacetic acid, and 2-phosphinyl-butane -1,2,4-tricarboxylic acid, which may be used singly or in combination of two or more.
該有機磷酸化合物可以按組成物之總重量計為0.01~10重量%,且較佳為0.05~5重量%之量使用。如果該有機磷酸化合物之量小於0.01重量%,則清潔液組成物移除污染物或粒子的能力可能降低,且難以控制清潔液組成物之pH。相反地,如果其量超過10重量%,則組成物之pH可能降低,因而移除粒子的能力降低且增加金屬線路腐蝕。The organic phosphoric acid compound may be used in an amount of from 0.01 to 10% by weight, and preferably from 0.05 to 5% by weight, based on the total mass of the composition. If the amount of the organophosphoric acid compound is less than 0.01% by weight, the ability of the cleaning liquid composition to remove contaminants or particles may be lowered, and it is difficult to control the pH of the cleaning liquid composition. Conversely, if the amount exceeds 10% by weight, the pH of the composition may be lowered, and thus the ability to remove particles is lowered and metal line corrosion is increased.
依照本發明之清潔液組成物所含有之多羧酸共聚物係在金屬表面上形成保護層而抑制金屬與鹼離子之間的過度反應,如此防止金屬被腐蝕,且功能如pH控制劑。該多羧酸共聚物可包含由以下式1所表示之單體。The polycarboxylic acid copolymer contained in the cleaning liquid composition according to the present invention forms a protective layer on the metal surface to suppress an excessive reaction between the metal and the alkali ion, thus preventing the metal from being corroded, and functions as a pH controlling agent. The polycarboxylic acid copolymer may contain a monomer represented by the following formula 1.
在式1中,R1 ~R3 係獨立地為氫原子、甲基、乙基、或-(CH2 )m2 COOM2 ,M1 與M2 係獨立地為氫原子、鹼金屬、鹼土金屬、或銨基,及m1 與m2 係獨立地為0~2之整數。In Formula 1, R 1 to R 3 are independently a hydrogen atom, a methyl group, an ethyl group, or a -(CH 2 )m 2 COOM 2 , and the M 1 and M 2 systems are independently a hydrogen atom, an alkali metal, or an alkaline earth. The metal or ammonium group, and m 1 and m 2 are independently an integer of 0 to 2.
其中之名詞「銨基」不僅表示銨(NH4 + ),亦表示其中鍵結氮原子的氫原子之一者或以上被其他取代基所取代之銨。例如該銨基可包含烷基銨。The term "ammonium group" refers to not only ammonium (NH 4 + ) but also ammonium which is one of the hydrogen atoms bonded to the nitrogen atom or more substituted with other substituents. For example, the ammonium group can comprise an alkylammonium.
該鹼金屬可包括Li、Na、K、Rb、Cs、或Fr,,及該鹼土金屬可包括Ca、Sr、Ba、或Ra。The alkali metal may include Li, Na, K, Rb, Cs, or Fr, and the alkaline earth metal may include Ca, Sr, Ba, or Ra.
該多羧酸共聚物之指定實施例可包括聚丙烯酸聚合物(PAA)、聚(甲基)丙烯酸甲酯共聚物(PMAA)、聚丙烯酸-順丁烯二酸共聚物(PAMA)、聚丙烯酸-聚(甲基)丙烯酸甲酯共聚物(PAMAA)、聚順丁烯二酸共聚物(PMA)、聚(甲基)丙烯酸甲酯-順丁烯二酸共聚物(PMAMA)、及其鹽,其可單獨或以二者或以上之混合物使用。Specific examples of the polycarboxylic acid copolymer may include polyacrylic acid polymer (PAA), poly(methyl)methyl acrylate copolymer (PMAA), polyacrylic acid-maleic acid copolymer (PAMA), polyacrylic acid. - poly(methyl) methacrylate copolymer (PAMAA), polymaleic acid copolymer (PMA), poly(methyl) methacrylate-maleic acid copolymer (PMAMA), and salts thereof It may be used singly or in combination of two or more.
該多羧酸共聚物可以按組成物之總重量計為0.01~10重量%,且較佳為0.05~5重量%之量使用。如果該多羧酸共聚物之量小於0.01重量%,則防止金屬線路被腐蝕的效果可能不良,且移除有機污染物的能力可能退化。相反地,如果其量超過10重量%,則組成物之pH可能降低,因而移除粒子的能力可能降低,且清潔液之黏度可能增加而不欲地將清洗力退化。The polycarboxylic acid copolymer may be used in an amount of from 0.01 to 10% by weight, and preferably from 0.05 to 5% by weight, based on the total mass of the composition. If the amount of the polycarboxylic acid copolymer is less than 0.01% by weight, the effect of preventing corrosion of the metal wiring may be poor, and the ability to remove organic contaminants may be degraded. Conversely, if the amount exceeds 10% by weight, the pH of the composition may be lowered, and thus the ability to remove particles may be lowered, and the viscosity of the cleaning liquid may increase without deteriorating the cleaning power.
依照本發明之清潔液組成物所含有之烷醇胺鹽係在清潔具有金屬圖案與氧化物層之基板時防止金屬被腐蝕及氧化物層之過度蝕刻,且賦與抑制清潔液之pH變化的pH緩衝效果。用於製備該烷醇胺鹽之鹽製造溫度可維持在90℃或更低。The alkanolamine salt contained in the cleaning liquid composition according to the present invention prevents corrosion of the metal and excessive etching of the oxide layer when cleaning the substrate having the metal pattern and the oxide layer, and imparts inhibition of pH change of the cleaning liquid. pH buffering effect. The salt used for the preparation of the alkanolamine salt can be maintained at a temperature of 90 ° C or lower.
該烷醇胺鹽可由包括低碳烷基(例如C1~C5烷基)之烷醇胺製備。又在胺基係具有一或兩個羥烷基之情形,則可將其他取代基與該胺基鍵聯,如此可使用其他之低碳烷醇胺鹽,如二甲基甲醇胺鹽。該烷醇胺鹽之指定實施例係包括單乙醇胺鹽、二乙醇胺鹽、三乙醇胺鹽、單異丙醇胺鹽、二異丙醇胺鹽、與三異丙醇胺鹽,其可單獨或以二者或以上之混合物使用。The alkanolamine salt can be prepared from an alkanolamine comprising a lower alkyl group (e.g., a C1 to C5 alkyl group). Further, in the case where the amine group has one or two hydroxyalkyl groups, other substituents may be bonded to the amine group, and other lower alkanolamine salts such as dimethylmethanolamine salts may be used. Specific examples of the alkanolamine salt include monoethanolamine salt, diethanolamine salt, triethanolamine salt, monoisopropanolamine salt, diisopropanolamine salt, and triisopropanolamine salt, either alone or in Use of a mixture of two or more.
該烷醇胺鹽可包括市售產品,例如AB RUST CM(得自LABEMA Co.)、AB RUST A4(得自LABEMA Co.)、EMADOX-NA(得自LABEMA Co.)、EMADOX-NB(得自LABEMA Co.)、EMADOX-NCAL(得自LABEMA Co.)、EMADOX-102(得自LABEMA Co.)、EMADOX-103(得自LABEMA Co.)、EMADOX-D520(得自LABEMA Co.)、及AB RUST AT(得自LABEMA Co.)。The alkanolamine salt may include commercially available products such as AB RUST CM (available from LABEMA Co.), AB RUST A4 (available from LABEMA Co.), EMADOX-NA (available from LABEMA Co.), EMADOX-NB (obtained) From LABEMA Co.), EMADOX-NCAL (from LABEMA Co.), EMADOX-102 (from LABEMA Co.), EMADOX-103 (from LABEMA Co.), EMADOX-D520 (from LABEMA Co.), And AB RUST AT (available from LABEMA Co.).
該烷醇胺鹽可以按組成物之總重量計為0.001~10重量%,且較佳為0.01~3重量%之量使用。如果該烷醇胺鹽之量小於0.001重量%,則pH緩衝效果及防止金屬線路被腐蝕的能力可能不良。相反地,如果其量超過10重量%,則pH可能降低,如此降低清潔力,且抗腐蝕力未與其量增加成正比而線性地增加。The alkanolamine salt may be used in an amount of 0.001 to 10% by weight, and preferably 0.01 to 3% by weight, based on the total mass of the composition. If the amount of the alkanolamine salt is less than 0.001% by weight, the pH buffering effect and the ability to prevent corrosion of the metal wiring may be poor. Conversely, if the amount exceeds 10% by weight, the pH may be lowered, thus the cleaning power is lowered, and the corrosion resistance is not linearly increased in proportion to the amount thereof.
依照本發明之清潔液組成物所含有之吡咯系化合物可由以下式2所表示。The pyrrole compound contained in the cleaning liquid composition according to the present invention can be represented by the following formula 2.
在式2中,R4 、R5 與R6 係獨立地為氫原子、鹵素原子、烷基、環烷基、烯丙基、芳基、胺基、烷胺基、硝基、氰基、巰基、烷巰基、羥基、羥烷基、羧基、羧烷基、醯基、烷氧基、或具有雜環之單價基。In Formula 2, R 4 , R 5 and R 6 are independently a hydrogen atom, a halogen atom, an alkyl group, a cycloalkyl group, an allyl group, an aryl group, an amine group, an alkylamino group, a nitro group, a cyano group, A mercapto group, an alkyl group, a hydroxyl group, a hydroxyalkyl group, a carboxyl group, a carboxyalkyl group, a decyl group, an alkoxy group, or a monovalent group having a heterocyclic ring.
其中該烷基係具有1~10個碳原子,該芳基係具有5~12個碳原子,該烷氧基係具有1~10個碳原子,及該雜環係具有4~12個碳原子。Wherein the alkyl group has 1 to 10 carbon atoms, the aryl group has 5 to 12 carbon atoms, the alkoxy group has 1 to 10 carbon atoms, and the heterocyclic ring has 4 to 12 carbon atoms. .
該吡咯系化合物之指定實施例係包括2,2’-[[[苯并三唑-1-基]甲基]亞胺基]貳乙醇、2,2’-[[[甲基-1H-苯并三唑-1-基]甲基]亞胺基]貳甲醇、2,2’-[[[乙基-1H-苯并三唑-1-基]甲基]亞胺基]貳乙醇、2,2’-[[[甲基-1H-苯并三唑-1-基]甲基]亞胺基]貳乙醇、2,2’-[[[甲基-1H-苯并三唑-1-基]甲基]亞胺基]貳羧酸、2,2’-[[[甲基-1H-苯并三唑-1-基]甲基]亞胺基]貳甲胺、與2,2’-[[[胺-1H-苯并三唑-1-基]甲基]亞胺基]貳乙醇,其可單獨或以二者或以上之混合物使用。Specific examples of the pyrrole-based compound include 2,2'-[[[benzotriazol-1-yl]methyl]imino]oxime ethanol, 2,2'-[[[methyl-1H- Benzotriazol-1-yl]methyl]imino]indole methanol, 2,2'-[[[ethyl-1H-benzotriazol-1-yl]methyl]imino]indoleethanol , 2,2'-[[[methyl-1H-benzotriazol-1-yl]methyl]imino]indoleethanol, 2,2'-[[[methyl-1H-benzotriazole] -1-yl]methyl]imino]anthracenecarboxylic acid, 2,2'-[[[methyl-1H-benzotriazol-1-yl]methyl]imino]]methylamine, and 2,2'-[[[Amine-1H-benzotriazol-1-yl]methyl]imino]oximeethanol, which may be used singly or in a mixture of two or more thereof.
該吡咯系化合物可以按組成物之總重量計為0.001~10重量%,且較佳為0.01~3重量%之量使用。在該成分之量係在以上範圍內時可使金屬層損壞最小,且可確保經濟益處。The azole compound can be used in an amount of 0.001 to 10% by weight, and preferably 0.01 to 3% by weight, based on the total weight of the composition. When the amount of the component is within the above range, the metal layer can be minimized and economic benefits can be ensured.
又依照本發明之清潔液組成物所含有之水並未特別地限制,但是可包括電阻率(其為離子從水被移除之程度)為至少18 MΩ/公分之去離子水。Further, the water contained in the cleaning liquid composition according to the present invention is not particularly limited, but may include deionized water having a resistivity (which is a degree to which ions are removed from water) of at least 18 MΩ/cm.
使用依照本發明之清潔液組成物的基板清潔可藉此技藝一般已知之方法進行。該清潔方法可包括例如噴灑、旋轉、浸泡、及使用超音波浸泡。依照本發明之清潔液組成物可呈現最大清潔效果的溫度係設為20~80℃,且較佳為20~50℃之範圍。又使用依照本發明之清潔液組成物的基板清潔可實行30秒至10分鐘之時間。Substrate cleaning using the cleaning fluid composition in accordance with the present invention can be carried out by methods generally known in the art. The cleaning method can include, for example, spraying, spinning, soaking, and using ultrasonic soaking. The temperature at which the cleaning liquid composition according to the present invention exhibits the maximum cleaning effect is set to be 20 to 80 ° C, and preferably 20 to 50 ° C. Further, substrate cleaning using the cleaning liquid composition according to the present invention can be carried out for a period of 30 seconds to 10 minutes.
由以下之實施例可較佳地了解本發明,其係敘述以例證但不視為限制本發明。以下之實施例可由熟悉此技藝者在本發明之範圍內適當地修改。The invention is best understood by the following examples, which are not to be construed as limiting. The following embodiments are appropriately modified within the scope of the invention by those skilled in the art.
實施例1~20及比較例1~3:清潔液組成物之製備Examples 1 to 20 and Comparative Examples 1 to 3: Preparation of cleaning liquid composition
將預定量之以下表1所示成分混合及攪拌,如此製備清潔液組成物。A predetermined amount of the components shown in Table 1 below were mixed and stirred to prepare a cleaning liquid composition.
A-1:氫氧化四甲銨(TMAH)A-1: tetramethylammonium hydroxide (TMAH)
A-2:氫氧化四乙銨(TEAH)A-2: Tetraethylammonium hydroxide (TEAH)
A-3:單異丙胺(MIPA)A-3: monoisopropylamine (MIPA)
A-4:單乙醇胺(MEA)A-4: monoethanolamine (MEA)
B-1:N-甲基吡咯啶酮(NMP)B-1: N-methylpyrrolidone (NMP)
B-2:1,3-二甲基-2-四氫咪唑酮(DMI)B-2: 1,3-dimethyl-2-tetrahydroimidazolidone (DMI)
C-1:1-羥基亞乙基-1,1-二膦酸C-1:1-hydroxyethylidene-1,1-diphosphonic acid
C-2:胺基參(亞甲基膦酸)C-2: amine ginseng (methylene phosphonic acid)
D-1:聚丙烯酸-順丁烯二酸共聚物(PAMA)D-1: Polyacrylic acid-maleic acid copolymer (PAMA)
D-2:聚(甲基)丙烯酸甲酯-順丁烯二酸共聚物(PMAMA)D-2: Poly(methyl) methacrylate-maleic acid copolymer (PMAMA)
E-1:EMADOX-NB(得自LABEMA Co.)E-1: EMADOX-NB (available from LABEMA Co.)
E-2:EMADOX-D520(得自LABEMA Co.)E-2: EMADOX-D520 (available from LABEMA Co.)
F-1:2,2’-[[[乙基-1H-苯并三唑-1-基]甲基]亞胺基]貳乙醇F-1: 2,2'-[[[Ethyl-1H-benzotriazol-1-yl]methyl]imino]indoleethanol
測試例:清潔液組成物的性質之評估Test case: Evaluation of the properties of the cleaning liquid composition
1) Al、Cu蝕刻率之評估1) Evaluation of Al and Cu etch rates
將具有2000埃厚的Al層之玻璃基板、及具有2500埃厚的Cu層之玻璃基板在實施例1~9、13、17、及比較例1~~3之清潔液組成物中浸泡30分鐘。其中清潔液之溫度為40℃,且在浸泡前後測量Al層與Cu層之厚度,及由厚度變化計算Al層與Cu層之溶解率。結果係示於以下表2。A glass substrate having an Al layer of 2000 angstroms and a glass substrate having a Cu layer of 2,500 angstroms were immersed in the cleaning liquid compositions of Examples 1 to 9, 13, 17, and Comparative Examples 1 to 3 for 30 minutes. . The temperature of the cleaning liquid is 40 ° C, and the thicknesses of the Al layer and the Cu layer are measured before and after the immersion, and the dissolution rates of the Al layer and the Cu layer are calculated from the thickness changes. The results are shown in Table 2 below.
2) 移除有機污染物-1的能力之評估2) Assessment of the ability to remove organic pollutants-1
為了評估有機污染物的能力,將尺寸為5公分x5公分之玻璃基板的表面以人指紋或以有機氈尖筆污染,且使用噴灑型玻璃基板清潔裝置將被污染之表面以實施例3、4、7~20之40℃清潔液組成物清潔2分鐘。然後將基板以超純水清洗30秒然後使用氮乾燥。在判斷有機污染物已被移除時係以○表示,及在判斷有機污染物仍未被移除時係以X表示。結果係示於以下表2。In order to evaluate the ability of organic contaminants, the surface of a glass substrate having a size of 5 cm x 5 cm was contaminated with a human fingerprint or with an organic felt tip pen, and the surface to be contaminated was treated with a spray type glass substrate cleaning device as in Examples 3, 4. , 4~20 of 40 ° C cleaning solution composition cleaned for 2 minutes. The substrate was then washed with ultrapure water for 30 seconds and then dried using nitrogen. It is indicated by ○ when it is judged that the organic pollutant has been removed, and is represented by X when it is judged that the organic pollutant has not been removed. The results are shown in Table 2 below.
另外,將使用實施例4之清潔液組成物移除有機污染物的結果示於圖1~4。圖1為顯示被有機氈尖筆標示之有機污染物污染的玻璃基板在清潔前之相片,及圖2為顯示被有機氈尖筆標示污染的玻璃基板在清潔後之相片。圖3為顯示被人指紋之有機污染物污染的玻璃基板在清潔前之相片,及圖4為顯示被指紋污染的玻璃基板在清潔後之相片。Further, the results of removing the organic contaminant using the cleaning liquid composition of Example 4 are shown in Figs. 1 is a photograph showing a glass substrate contaminated with organic contaminants marked with an organic felt tip before cleaning, and FIG. 2 is a photograph showing the glass substrate contaminated with an organic felt tip pen after cleaning. 3 is a photograph showing a glass substrate contaminated with organic pollutants of a human fingerprint before cleaning, and FIG. 4 is a photograph showing a glass substrate contaminated with fingerprints after cleaning.
3) 移除有機污染物-2的能力之評估3) Assessment of the ability to remove organic pollutants-2
將玻璃基板在空氣中靜置24小時,如此被空氣中之各種有機物、無機物、粒子污染,然後使用噴灑型玻璃基板清潔裝置以實施例3、4、7~20之40℃清潔液組成物清潔2分鐘。然後將基板以超純水清洗30秒然後使用氮乾燥。繼而將0.5微升之超純水滴在玻璃基板上,且測量清潔後之接觸角。結果係示於以下表2。The glass substrate was allowed to stand in the air for 24 hours, so as to be contaminated with various organic substances, inorganic substances, and particles in the air, and then cleaned with the spray type glass substrate cleaning device at 40 ° C of the cleaning liquid composition of Examples 3, 4, and 7-20. 2 minutes. The substrate was then washed with ultrapure water for 30 seconds and then dried using nitrogen. Then, 0.5 μl of ultrapure water was dropped on the glass substrate, and the contact angle after cleaning was measured. The results are shown in Table 2 below.
4) 移除有機污染物-3的能力之評估4) Assessment of the ability to remove organic pollutants-3
將被有機粒子溶液污染之玻璃基板以實施例3、9、13、17之清潔液組成物清潔。具體而言,該玻璃基板係以平均粒度為0.8微米之有機粒子溶液污染,以3000 rpm旋乾1分鐘,然後使用噴灑型玻璃基板清潔裝置以40℃之以上清潔液組成物清潔2分鐘。然後將基板以超純水清洗30秒然後使用氮乾燥。使用表面粒子計數器(Topcon WM-1500)計算清潔前後尺寸為0.1微米或以上之粒子的數量。結果係示於以下表2。The glass substrate contaminated with the organic particle solution was cleaned with the cleaning liquid compositions of Examples 3, 9, 13, and 17. Specifically, the glass substrate was contaminated with an organic particle solution having an average particle size of 0.8 μm, spun at 3000 rpm for 1 minute, and then cleaned with a spray type glass substrate cleaning device at a temperature of 40 ° C or more for 2 minutes. The substrate was then washed with ultrapure water for 30 seconds and then dried using nitrogen. The number of particles having a size of 0.1 μm or more before and after cleaning was calculated using a surface particle counter (Topcon WM-1500). The results are shown in Table 2 below.
由表2之結果及圖1~4明顯可知,依照本發明之清潔液組成物對Al或Cu之抗腐蝕性能高,且移除有機污染物與粒子的能力非常高。As is apparent from the results of Table 2 and Figs. 1 to 4, the cleaning liquid composition according to the present invention has high corrosion resistance to Al or Cu, and the ability to remove organic contaminants and particles is very high.
如前所述,本發明提供一種用於半導體裝置之清潔液組成物。依照本發明,該清潔液組成物從FPD用玻璃基板或金屬層之表面移除有機污染物的能力高,且防止在基板上所形成之Al、Al合金、Cu、Cu合金等製金屬線路被腐蝕的能力亦高。此外,該清潔液組成物係含有大量水,因此易於處理且為環境友善性。As described above, the present invention provides a cleaning liquid composition for a semiconductor device. According to the present invention, the cleaning liquid composition has high ability to remove organic contaminants from the surface of the FPD glass substrate or the metal layer, and prevents metal lines such as Al, Al alloy, Cu, Cu alloy formed on the substrate from being The ability to corrode is also high. Further, the cleaning liquid composition contains a large amount of water, and thus is easy to handle and environmentally friendly.
雖然已為了例證之目的而揭示本發明之各種態樣及具體實施例,熟悉此技藝者應了解,各種修改、添加及取代為可行的,而不背離所附申請專利範圍所揭示之本發明的範圍及精神。While the invention has been described with respect to the embodiments of the present invention, it will be understood that Scope and spirit.
本發明之特點及優點由以上之詳細說明結合附圖而更明確地了解,其中:圖1為顯示被有機氈尖筆標示之有機污染物污染的玻璃基板在清潔前之相片;圖2為顯示被有機氈尖筆標示污染之玻璃基板在使用實施例4的清潔液組成物清潔後之相片;圖3為顯示被人指紋之有機污染物污染的玻璃基板在清潔前之相片;及圖4為顯示被指紋污染之玻璃基板在使用實施例4的清潔液組成物清潔後之相片。The features and advantages of the present invention are more clearly understood from the following detailed description in conjunction with the accompanying drawings in which: FIG. 1 is a photograph showing a glass substrate contaminated with organic contaminants marked by an organic felt tip before cleaning; FIG. 2 is a view Photograph of the glass substrate contaminated by the organic felt tip pen after cleaning using the cleaning liquid composition of Example 4; FIG. 3 is a photograph showing the glass substrate contaminated by organic fingerprints of the human fingerprint before cleaning; and FIG. A photograph of the glass substrate contaminated with the fingerprint after cleaning using the cleaning liquid composition of Example 4 is displayed.
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| KR101880306B1 (en) * | 2011-12-19 | 2018-07-20 | 동우 화인켐 주식회사 | Cleaning composition using electronic material |
| KR101956388B1 (en) * | 2013-03-27 | 2019-03-08 | 동우 화인켐 주식회사 | Cleaning solution composition for sapphire wafer |
| CN103773630A (en) * | 2013-12-31 | 2014-05-07 | 遂宁市广天电子有限公司 | Novel quick drying screen washing agent |
| CN105368611B (en) * | 2014-08-06 | 2018-12-07 | 东友精细化工有限公司 | Cleaning compositions |
| KR102153087B1 (en) * | 2016-09-29 | 2020-09-07 | 주식회사 엘지화학 | Composition for cleaning substrate of display device and preparing method of display device using the same |
| CN109055026B (en) * | 2018-07-26 | 2020-10-23 | 广州华望汽车电子有限公司 | Maintenance cleaning agent and maintenance cleaning method for selective wave soldering nozzles |
| JP2020094152A (en) * | 2018-12-14 | 2020-06-18 | メルク、パテント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングMerck Patent GmbH | Substrate cleaning liquid, method of manufacturing cleaned substrate using the same, and method of manufacturing device |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101398638A (en) * | 2007-09-29 | 2009-04-01 | 安集微电子(上海)有限公司 | Detergent for photo resist |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP3516446B2 (en) * | 2002-04-26 | 2004-04-05 | 東京応化工業株式会社 | Photoresist stripping method |
| JP4267359B2 (en) | 2002-04-26 | 2009-05-27 | 花王株式会社 | Resist stripper composition |
| KR100503231B1 (en) * | 2002-10-22 | 2005-07-22 | 주식회사 엘지화학 | Rinse composition for semiconductor and tft-lcd |
| JP4175540B2 (en) * | 2002-11-13 | 2008-11-05 | 花王株式会社 | Composition for semiconductor substrate manufacturing process |
| KR101166002B1 (en) * | 2004-02-09 | 2012-07-18 | 미쓰비시 가가꾸 가부시키가이샤 | Substrate cleaning liquid for semiconductor device and cleaning method |
| JP4628209B2 (en) * | 2004-11-18 | 2011-02-09 | 花王株式会社 | Release agent composition |
| CN101373340B (en) * | 2007-08-23 | 2013-07-10 | 安集微电子(上海)有限公司 | Cleaning agent of photoresist |
| CN101614971B (en) * | 2008-06-27 | 2013-06-12 | 安集微电子(上海)有限公司 | Photoresist cleaning agent |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101398638A (en) * | 2007-09-29 | 2009-04-01 | 安集微电子(上海)有限公司 | Detergent for photo resist |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102834500B (en) | 2015-12-02 |
| KR101799591B1 (en) | 2017-12-20 |
| TW201200592A (en) | 2012-01-01 |
| CN102834500A (en) | 2012-12-19 |
| WO2011145880A3 (en) | 2012-04-19 |
| KR20110127421A (en) | 2011-11-25 |
| WO2011145880A2 (en) | 2011-11-24 |
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