[go: up one dir, main page]

TWI563695B - Method for manufacturing optical semiconductor device - Google Patents

Method for manufacturing optical semiconductor device

Info

Publication number
TWI563695B
TWI563695B TW103100550A TW103100550A TWI563695B TW I563695 B TWI563695 B TW I563695B TW 103100550 A TW103100550 A TW 103100550A TW 103100550 A TW103100550 A TW 103100550A TW I563695 B TWI563695 B TW I563695B
Authority
TW
Taiwan
Prior art keywords
semiconductor device
optical semiconductor
manufacturing optical
manufacturing
semiconductor
Prior art date
Application number
TW103100550A
Other languages
English (en)
Other versions
TW201427117A (zh
Inventor
Hiroshi Koizumi
Yasuhide Okada
Susumu Obata
Tomomichi Naka
Kazuhito Higuchi
Kazuo Shimokawa
Yoshiaki Sugizaki
Akihiro Kojima
Original Assignee
Toshiba Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Kk filed Critical Toshiba Kk
Publication of TW201427117A publication Critical patent/TW201427117A/zh
Application granted granted Critical
Publication of TWI563695B publication Critical patent/TWI563695B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0363—Manufacture or treatment of packages of optical field-shaping means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H10W72/07251—
    • H10W72/20—
TW103100550A 2010-06-07 2011-06-07 Method for manufacturing optical semiconductor device TWI563695B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010130526A JP4875185B2 (ja) 2010-06-07 2010-06-07 光半導体装置

Publications (2)

Publication Number Publication Date
TW201427117A TW201427117A (zh) 2014-07-01
TWI563695B true TWI563695B (en) 2016-12-21

Family

ID=45052948

Family Applications (4)

Application Number Title Priority Date Filing Date
TW100119867A TWI462352B (zh) 2010-06-07 2011-06-07 光半導體裝置及其製造方法
TW103134786A TWI587547B (zh) 2010-06-07 2011-06-07 光半導體裝置及其製造方法
TW103100550A TWI563695B (en) 2010-06-07 2011-06-07 Method for manufacturing optical semiconductor device
TW103134787A TW201511368A (zh) 2010-06-07 2011-06-07 光半導體裝置及其製造方法

Family Applications Before (2)

Application Number Title Priority Date Filing Date
TW100119867A TWI462352B (zh) 2010-06-07 2011-06-07 光半導體裝置及其製造方法
TW103134786A TWI587547B (zh) 2010-06-07 2011-06-07 光半導體裝置及其製造方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW103134787A TW201511368A (zh) 2010-06-07 2011-06-07 光半導體裝置及其製造方法

Country Status (5)

Country Link
US (2) US8754429B2 (zh)
JP (1) JP4875185B2 (zh)
KR (1) KR101191488B1 (zh)
CN (4) CN102270733A (zh)
TW (4) TWI462352B (zh)

Families Citing this family (82)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5414627B2 (ja) 2010-06-07 2014-02-12 株式会社東芝 半導体発光装置及びその製造方法
JP5498417B2 (ja) 2011-03-15 2014-05-21 株式会社東芝 半導体発光装置及びその製造方法
JP5746553B2 (ja) 2011-04-28 2015-07-08 株式会社東芝 基板加工システム、および基板加工プログラム
JP5970071B2 (ja) * 2011-09-30 2016-08-17 インテル・コーポレーション デバイス構造の製造方法および構造
KR101969334B1 (ko) * 2011-11-16 2019-04-17 엘지이노텍 주식회사 발광 소자 및 이를 구비한 발광 장치
TWI447975B (zh) * 2012-01-05 2014-08-01 矽品精密工業股份有限公司 發光二極體晶片之結構、發光二極體封裝基板之結構、發光二極體封裝結構及其製法
US8957429B2 (en) * 2012-02-07 2015-02-17 Epistar Corporation Light emitting diode with wavelength conversion layer
CN104081547A (zh) * 2012-02-15 2014-10-01 松下电器产业株式会社 发光装置以及其制造方法
JP2013197310A (ja) 2012-03-19 2013-09-30 Toshiba Corp 発光装置
JP5985322B2 (ja) * 2012-03-23 2016-09-06 株式会社東芝 半導体発光装置及びその製造方法
DE102012204791A1 (de) * 2012-03-26 2013-09-26 Osram Gmbh Leuchtvorrichtung mit leuchtstoffkörper auf kühlkörper
DE102012204786A1 (de) * 2012-03-26 2013-09-26 Osram Gmbh Leuchtvorrichtung mit leuchtstoffkörper auf kühlkörper
JP5943828B2 (ja) * 2012-03-28 2016-07-05 有限会社 ナプラ 発光デバイス、照明装置、ディスプレイ及び信号灯
JP2013232479A (ja) * 2012-04-27 2013-11-14 Toshiba Corp 半導体発光装置
JP2013232504A (ja) * 2012-04-27 2013-11-14 Toshiba Corp 半導体発光装置
JP5816127B2 (ja) * 2012-04-27 2015-11-18 株式会社東芝 半導体発光装置およびその製造方法
WO2013168365A1 (ja) * 2012-05-09 2013-11-14 パナソニック株式会社 発光装置
JP5832956B2 (ja) 2012-05-25 2015-12-16 株式会社東芝 半導体発光装置
CN102769080A (zh) * 2012-05-31 2012-11-07 杭州士兰明芯科技有限公司 一种白光led芯片及其制作方法
WO2014006539A1 (en) * 2012-07-05 2014-01-09 Koninklijke Philips N.V. Phosphor separated from led by transparent spacer
JP2014053506A (ja) 2012-09-07 2014-03-20 Toshiba Corp 半導体発光装置及び発光モジュール
JP2014139999A (ja) * 2013-01-21 2014-07-31 Toshiba Corp 半導体発光装置
CN103113898B (zh) * 2013-01-24 2014-08-13 李迎九 Led导光粉的制备方法
JP2014170902A (ja) 2013-03-05 2014-09-18 Toshiba Corp 半導体発光装置及びその製造方法
JP2014175362A (ja) 2013-03-06 2014-09-22 Toshiba Corp 半導体発光素子及びその製造方法
CN105378952B (zh) 2013-05-13 2018-01-12 首尔半导体（株） 发光器件封装件及其制造方法以及包含该发光器件封装件的车灯和背光单元
KR102135625B1 (ko) * 2013-11-29 2020-07-21 서울반도체 주식회사 발광 소자, 이를 포함하는 차량용 램프 및 백라이트 유닛
WO2014184698A1 (en) * 2013-05-14 2014-11-20 Koninklijke Philips N.V. Chip scale light emitting device package in molded leadframe
CN103258940B (zh) * 2013-05-15 2017-10-24 中国科学院福建物质结构研究所 一种全固态白光发光二极管的封装方法
EP3000138B8 (en) * 2013-05-20 2018-08-22 Lumileds Holding B.V. Chip scale light emitting device package with dome
KR102085897B1 (ko) * 2013-06-10 2020-03-06 엘지이노텍 주식회사 발광 소자 및 발광 소자 패키지
JP6107475B2 (ja) 2013-06-28 2017-04-05 日亜化学工業株式会社 発光装置
CN103346233A (zh) * 2013-07-10 2013-10-09 合肥彩虹蓝光科技有限公司 一种提高发光亮度的led倒装结构
KR20160032236A (ko) * 2013-07-19 2016-03-23 코닌클리케 필립스 엔.브이. 광학 요소를 가지며 기판 캐리어를 갖지 않는 ｐｃ ｌｅｄ
KR102100923B1 (ko) * 2013-09-30 2020-04-16 서울반도체 주식회사 발광 디바이스 및 제조방법
TWI520383B (zh) * 2013-10-14 2016-02-01 新世紀光電股份有限公司 發光二極體封裝結構
JP6387780B2 (ja) * 2013-10-28 2018-09-12 日亜化学工業株式会社 発光装置及びその製造方法
JP6221696B2 (ja) * 2013-11-29 2017-11-01 日亜化学工業株式会社 発光装置の製造方法および発光装置
US10680142B2 (en) * 2014-01-08 2020-06-09 Lumileds Llc Wavelength converted semiconductor light emitting device
JP2015173142A (ja) * 2014-03-11 2015-10-01 株式会社東芝 半導体発光装置
JP2015176960A (ja) * 2014-03-14 2015-10-05 株式会社東芝 発光装置
JP6589259B2 (ja) * 2014-06-20 2019-10-16 日亜化学工業株式会社 発光素子及びこれを用いた発光装置
KR102450966B1 (ko) * 2014-10-27 2022-10-06 루미리즈 홀딩 비.브이. 지향성 발광 배열 및 이를 제조하는 방법
DE102014116935A1 (de) * 2014-11-19 2016-05-19 Osram Opto Semiconductors Gmbh Bauelement und Verfahren zur Herstellung eines Bauelements
DE102015100578A1 (de) 2015-01-15 2016-07-21 Osram Opto Semiconductors Gmbh Bauelement und Verfahren zur Herstellung eines Bauelements
CN105990528B (zh) * 2015-02-16 2018-04-17 上海和辉光电有限公司 Oled显示面板及oled显示面板制备方法
JP6555907B2 (ja) 2015-03-16 2019-08-07 アルパッド株式会社 半導体発光装置
JP2016181674A (ja) * 2015-03-24 2016-10-13 旭化成株式会社 半導体発光装置及びそれを備えた装置
DE102015106367B4 (de) 2015-04-24 2021-08-05 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Lumineszenzdiodenanordnung
DE102015107590A1 (de) * 2015-05-13 2016-11-17 Osram Opto Semiconductors Gmbh Verfahren zur Verspiegelung von Mantelflächen von optischen Bauelementen für die Verwendung in optoelektronischen Halbleiterkörpern und oberflächenmontierbarer optoelektronischer Halbleiterkörper
US10217914B2 (en) * 2015-05-27 2019-02-26 Samsung Electronics Co., Ltd. Semiconductor light emitting device
KR20170003102A (ko) * 2015-06-30 2017-01-09 엘지이노텍 주식회사 발광소자 및 이를 포함하는 발광소자 패키지
DE102015111492B4 (de) * 2015-07-15 2023-02-23 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Bauelemente und Verfahren zur Herstellung von Bauelementen
JP6493053B2 (ja) * 2015-07-17 2019-04-03 日亜化学工業株式会社 発光装置
TWI667813B (zh) * 2015-08-03 2019-08-01 日商創光科學股份有限公司 氮化物半導體晶圓及其製造方法、及氮化物半導體紫外線發光元件及裝置
TWI644454B (zh) * 2015-08-19 2018-12-11 佰鴻工業股份有限公司 Light-emitting diode structure
JP2015216408A (ja) * 2015-09-01 2015-12-03 株式会社東芝 半導体発光装置
JP6230038B2 (ja) * 2015-09-03 2017-11-15 丸文株式会社 深紫外ｌｅｄ及びその製造方法
TWI614907B (zh) * 2015-09-08 2018-02-11 精曜有限公司 半導體元件及其製作方法
JP6434878B2 (ja) 2015-09-10 2018-12-05 株式会社東芝 発光装置
KR102499548B1 (ko) * 2015-11-06 2023-03-03 엘지이노텍 주식회사 발광패키지 및 이를 포함하는 차량용 헤드램프
TWI703744B (zh) * 2016-04-08 2020-09-01 晶元光電股份有限公司 發光元件
WO2018012534A1 (ja) * 2016-07-14 2018-01-18 日本ゼオン株式会社 赤外発光ｌｅｄ
CN106299040B (zh) * 2016-08-18 2019-01-11 厦门市三安光电科技有限公司 一种薄膜倒装发光组件的制作方法及其薄膜倒装发光组件
CN106252470B (zh) * 2016-08-30 2018-08-14 厦门市三安光电科技有限公司 一种氮化镓基发光二极管及其制作方法
TWI705581B (zh) * 2016-09-09 2020-09-21 晶元光電股份有限公司 發光裝置以及其製造方法
KR102734057B1 (ko) * 2017-02-24 2024-11-26 서울바이오시스 주식회사 광 차단층을 가지는 발광 다이오드
WO2018133940A1 (en) * 2017-01-19 2018-07-26 Osram Opto Semiconductors Gmbh Method for producing an optoelectronic element
JP2018148110A (ja) * 2017-03-08 2018-09-20 スタンレー電気株式会社 発光装置及びその製造方法
JP7132502B2 (ja) 2018-03-09 2022-09-07 日亜化学工業株式会社 光源装置
KR102688877B1 (ko) * 2019-03-14 2024-07-29 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광 소자 패키지
JP7148811B2 (ja) * 2019-03-27 2022-10-06 日亜化学工業株式会社 発光装置の製造方法
CN109950385B (zh) * 2019-04-24 2020-09-08 业成科技（成都）有限公司 发光元件、显示装置、发光组件及其制造方法
JP7298111B2 (ja) 2019-06-07 2023-06-27 日亜化学工業株式会社 発光素子及びその製造方法
JP7022284B2 (ja) 2019-06-17 2022-02-18 日亜化学工業株式会社 発光装置の製造方法
KR102301877B1 (ko) * 2019-12-27 2021-09-15 웨이브로드 주식회사 반도체 발광소자
US11462666B2 (en) * 2020-05-15 2022-10-04 Lumileds Llc Light-emitting device with configurable spatial distribution of emission intensity
US11563148B2 (en) 2020-05-15 2023-01-24 Lumileds Llc Light-emitting device with configurable spatial distribution of emission intensity
CN112968102A (zh) * 2020-12-11 2021-06-15 重庆康佳光电技术研究院有限公司 发光器件及具有其的显示面板
JP7328568B2 (ja) 2021-06-30 2023-08-17 日亜化学工業株式会社 光源、光源装置及び光源の製造方法
DE102022201253A1 (de) 2022-02-07 2023-08-10 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Strahlungsemittierendes bauteil und verfahren zur herstellung eines strahlungsemittierenden bauteils
JP2023173280A (ja) * 2022-05-25 2023-12-07 旭化成エレクトロニクス株式会社 紫外線発光装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200937682A (en) * 2007-10-22 2009-09-01 Philips Lumileds Lighting Co Robust LED structure for substrate lift-off

Family Cites Families (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0921577A4 (en) * 1997-01-31 2007-10-31 Matsushita Electric Industrial Co Ltd LIGHT-EMITTING COMPONENT; SEMICONDUCTOR LIGHT EMITTING DEVICE, AND ITS MANUFACTURING METHOD
US6784463B2 (en) * 1997-06-03 2004-08-31 Lumileds Lighting U.S., Llc III-Phospide and III-Arsenide flip chip light-emitting devices
JPH11150295A (ja) * 1997-11-17 1999-06-02 Sony Corp 半導体発光素子、半導体発光素子の製造方法および表示装置
JP2000183407A (ja) 1998-12-16 2000-06-30 Rohm Co Ltd 光半導体装置
JP3328647B2 (ja) 2000-08-22 2002-09-30 サンユレック株式会社 光電子部品の製造方法
JP2002141559A (ja) * 2000-10-31 2002-05-17 Sanken Electric Co Ltd 発光半導体チップ組立体及び発光半導体リードフレーム
JP3991612B2 (ja) * 2001-04-09 2007-10-17 日亜化学工業株式会社 発光素子
TW544826B (en) 2001-05-18 2003-08-01 Nec Electronics Corp Flip-chip-type semiconductor device and manufacturing method thereof
JP4529319B2 (ja) * 2001-06-27 2010-08-25 日亜化学工業株式会社 半導体チップとその製造方法
JP2004363380A (ja) * 2003-06-05 2004-12-24 Sanyo Electric Co Ltd 光半導体装置およびその製造方法
JP2005117020A (ja) * 2003-09-16 2005-04-28 Stanley Electric Co Ltd 窒化ガリウム系化合物半導体素子とその製造方法
KR101127314B1 (ko) * 2003-11-19 2012-03-29 니치아 카가쿠 고교 가부시키가이샤 반도체소자
US7842547B2 (en) 2003-12-24 2010-11-30 Lumination Llc Laser lift-off of sapphire from a nitride flip-chip
JP4622253B2 (ja) * 2004-01-22 2011-02-02 日亜化学工業株式会社 発光デバイス及びその製造方法
ATE524839T1 (de) * 2004-06-30 2011-09-15 Cree Inc Verfahren zum kapseln eines lichtemittierenden bauelements und gekapselte lichtemittierende bauelemente im chip-massstab
JP4667803B2 (ja) * 2004-09-14 2011-04-13 日亜化学工業株式会社 発光装置
US7045375B1 (en) * 2005-01-14 2006-05-16 Au Optronics Corporation White light emitting device and method of making same
JP2006222288A (ja) * 2005-02-10 2006-08-24 Toshiba Corp 白色ｌｅｄ及びその製造方法
US7125734B2 (en) * 2005-03-09 2006-10-24 Gelcore, Llc Increased light extraction from a nitride LED
KR100638813B1 (ko) * 2005-04-15 2006-10-27 삼성전기주식회사 플립칩형 질화물 반도체 발광소자
KR100609118B1 (ko) * 2005-05-03 2006-08-08 삼성전기주식회사 플립 칩 발광다이오드 및 그 제조방법
JP4849866B2 (ja) * 2005-10-25 2012-01-11 京セラ株式会社 照明装置
JP4880329B2 (ja) * 2006-03-06 2012-02-22 株式会社小糸製作所 車両用灯具
TW200807760A (en) * 2006-05-23 2008-02-01 Alps Electric Co Ltd Method for manufacturing semiconductor light emitting element
TWI420691B (zh) * 2006-11-20 2013-12-21 尼康股份有限公司 Ｌｅｄ裝置及其製造方法
US9159888B2 (en) * 2007-01-22 2015-10-13 Cree, Inc. Wafer level phosphor coating method and devices fabricated utilizing method
US20080197378A1 (en) * 2007-02-20 2008-08-21 Hua-Shuang Kong Group III Nitride Diodes on Low Index Carrier Substrates
TWI348229B (en) 2007-07-19 2011-09-01 Advanced Optoelectronic Tech Packaging structure of chemical compound semiconductor device and fabricating method thereof
US9634191B2 (en) 2007-11-14 2017-04-25 Cree, Inc. Wire bond free wafer level LED
CN101878540B (zh) 2007-11-29 2013-11-06 日亚化学工业株式会社 发光装置及其制造方法
US7923272B2 (en) * 2007-12-28 2011-04-12 Hwang-Pao Lee Method of forming a resin cover lens of LED assembly
US20100006864A1 (en) * 2008-07-11 2010-01-14 Philips Lumileds Lighting Company, Llc Implanted connectors in led submount for pec etching bias
JP5426124B2 (ja) * 2008-08-28 2014-02-26 株式会社東芝 半導体発光装置の製造方法及び半導体発光装置
JP5161720B2 (ja) * 2008-09-30 2013-03-13 パナソニック株式会社 半導体発光素子およびその製造方法
JP2010135763A (ja) 2008-11-05 2010-06-17 Toshiba Corp Ｌｅｄデバイスの製造装置、ｌｅｄデバイスの製造方法及びｌｅｄデバイス
JP2010114218A (ja) 2008-11-05 2010-05-20 Toshiba Corp 発光デバイス
JP4799606B2 (ja) * 2008-12-08 2011-10-26 株式会社東芝 光半導体装置及び光半導体装置の製造方法
JP4724222B2 (ja) * 2008-12-12 2011-07-13 株式会社東芝 発光装置の製造方法
JP2011071272A (ja) * 2009-09-25 2011-04-07 Toshiba Corp 半導体発光装置及びその製造方法
JP2011171557A (ja) 2010-02-19 2011-09-01 Toshiba Corp 発光装置、その製造方法および発光装置製造装置
TWI492422B (zh) * 2010-03-18 2015-07-11 億光電子工業股份有限公司 具有螢光粉層之發光二極體晶片的製作方法
JP5101650B2 (ja) * 2010-03-25 2012-12-19 株式会社東芝 半導体発光装置及びその製造方法
US8329482B2 (en) * 2010-04-30 2012-12-11 Cree, Inc. White-emitting LED chips and method for making same
JP5414627B2 (ja) 2010-06-07 2014-02-12 株式会社東芝 半導体発光装置及びその製造方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200937682A (en) * 2007-10-22 2009-09-01 Philips Lumileds Lighting Co Robust LED structure for substrate lift-off

Also Published As

Publication number Publication date
CN102270733A (zh) 2011-12-07
CN103928595A (zh) 2014-07-16
TW201427117A (zh) 2014-07-01
CN104617203A (zh) 2015-05-13
TW201511368A (zh) 2015-03-16
TW201507219A (zh) 2015-02-16
CN103715345A (zh) 2014-04-09
US20140151739A1 (en) 2014-06-05
KR101191488B1 (ko) 2012-10-15
KR20110134322A (ko) 2011-12-14
US20110297987A1 (en) 2011-12-08
TW201201426A (en) 2012-01-01
TWI462352B (zh) 2014-11-21
JP2011258675A (ja) 2011-12-22
US8754429B2 (en) 2014-06-17
JP4875185B2 (ja) 2012-02-15
US8981412B2 (en) 2015-03-17
TWI587547B (zh) 2017-06-11

Similar Documents

Publication Publication Date Title
TWI563695B (en) Method for manufacturing optical semiconductor device
TWI562379B (en) Semiconductor device and method for manufacturing semiconductor device
SG10201403913PA (en) Method for manufacturing semiconductor device
TWI562367B (en) Semiconductor device and method for manufacturing semiconductor device
SG10201505586UA (en) Semiconductor device and method for manufacturing the same
TWI562366B (en) Manufacturing method of semiconductor device
TWI562243B (en) Deposition method and method for manufacturing semiconductor device
EP2602546A4 (en) SEMICONDUCTOR OPTICAL LIGHTING APPARATUS
SG10201510100UA (en) Semiconductor device
TWI563540B (en) Semiconductor device manufacturing method
EP2801746A4 (en) OPTICAL SEMICONDUCTOR LIGHTING APPARATUS
GB2488401B (en) Method of manufacturing semiconductor device structure
PH12014500451A1 (en) Semiconductor device
SG10201601757UA (en) Semiconductor device
EP2631939A4 (en) METHOD FOR MANUFACTURING MEMS DEVICE
PL2415593T3 (pl) Sposób produkcji urządzenia wyświetlacza optycznego
PL2652812T3 (pl) Sposób wytwarzania urządzenia oled
EP2575134B8 (en) Semiconductor device
SG11201402630XA (en) Method for manufacturing soi wafer
EP2811225A4 (en) OPTICAL SEMICONDUCTOR LIGHTING APPARATUS
IL223583A (en) A method for the production of quinoline-3-carboxamides
SG11201402006SA (en) Member for semiconductor manufacturing device
SG11201406661YA (en) Method for manufacturing bonded wafer
SG11201502119TA (en) Method for manufacturing soi wafer
IL228091B (en) Device for harming parasites