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TWI560877B - Recessed field plate transistor structures - Google Patents

Recessed field plate transistor structures

Info

Publication number
TWI560877B
TWI560877B TW103119694A TW103119694A TWI560877B TW I560877 B TWI560877 B TW I560877B TW 103119694 A TW103119694 A TW 103119694A TW 103119694 A TW103119694 A TW 103119694A TW I560877 B TWI560877 B TW I560877B
Authority
TW
Taiwan
Prior art keywords
field plate
transistor structures
recessed field
plate transistor
recessed
Prior art date
Application number
TW103119694A
Other languages
English (en)
Other versions
TW201511261A (zh
Inventor
Saptharishi Sriram
Terry Alcorn
Fabian Radulescu
Scott Sheppard
Original Assignee
Cree Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US13/913,490 external-priority patent/US9679981B2/en
Application filed by Cree Inc filed Critical Cree Inc
Publication of TW201511261A publication Critical patent/TW201511261A/zh
Application granted granted Critical
Publication of TWI560877B publication Critical patent/TWI560877B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H10D30/4755—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/117—Recessed field plates, e.g. trench field plates or buried field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
TW103119694A 2013-06-09 2014-06-06 Recessed field plate transistor structures TWI560877B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/913,490 US9679981B2 (en) 2013-06-09 2013-06-09 Cascode structures for GaN HEMTs
US13/929,487 US9847411B2 (en) 2013-06-09 2013-06-27 Recessed field plate transistor structures

Publications (2)

Publication Number Publication Date
TW201511261A TW201511261A (zh) 2015-03-16
TWI560877B true TWI560877B (en) 2016-12-01

Family

ID=51033542

Family Applications (2)

Application Number Title Priority Date Filing Date
TW105134046A TWI624945B (zh) 2013-06-09 2014-06-06 凹入式場板電晶體結構
TW103119694A TWI560877B (en) 2013-06-09 2014-06-06 Recessed field plate transistor structures

Family Applications Before (1)

Application Number Title Priority Date Filing Date
TW105134046A TWI624945B (zh) 2013-06-09 2014-06-06 凹入式場板電晶體結構

Country Status (4)

Country Link
US (1) US9847411B2 (zh)
EP (1) EP3008760B1 (zh)
TW (2) TWI624945B (zh)
WO (1) WO2014200753A2 (zh)

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