TWI422080B - Enhanced gas - tightness of the oscillator device wafer - level package structure - Google Patents
Enhanced gas - tightness of the oscillator device wafer - level package structure Download PDFInfo
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- 239000011135 tin Substances 0.000 claims description 4
- 229910052718 tin Inorganic materials 0.000 claims description 4
- 229910052797 bismuth Inorganic materials 0.000 claims description 3
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 3
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- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
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Landscapes
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Description
本發明係有關一種振子裝置,應用於譬如為手機、筆記型電腦、汽車電子等各種電子產品,特別是指一種強化氣密性之振子裝置晶圓級封裝結構。The invention relates to a vibrator device, which is applied to various electronic products such as mobile phones, notebook computers, automobile electronics, etc., in particular to a wafer level packaging structure of a vibrator device for enhancing airtightness.
石英元件具有穩定的壓電特性,能夠提供精準且寬廣的參考頻率、時脈控制、定時功能與過濾雜訊等功能,此外,石英元件也能做為運動及壓力等感測器,以及重要的光學元件;因此,對於電子產品而言,石英元件扮演著舉足輕重的地位。Quartz components have stable piezoelectric characteristics, providing accurate and wide reference frequency, clock control, timing functions and filtering noise. In addition, quartz components can also be used as sensors for motion and pressure, as well as important Optical components; therefore, for electronic products, quartz components play a pivotal role.
而針對石英振子晶體的封裝,前案提出了許多種方案,譬如美國專利公告第5030875號專利「犧牲式石英晶體支撐架」(sacrificial quartz-crystal mount),屬於早期金屬蓋體(Metal Cap)的封裝方式,整體封裝結構複雜、體積無法縮小。美國專利公告第6545392號專利「壓電共振器之封裝結構」(Package structure for a piezoelectric resonator),主要採用陶瓷封裝體來封裝石英音叉振子,並改良陶瓷基座(Package)與上蓋(Lid)結構,使得石英音叉振子具有較佳的抗震性,然而,該封裝體成本高且尺寸無法進一步降低。For the encapsulation of quartz crystal oscillator crystals, many proposals have been made in the prior art, such as the "sacrificial quartz-crystal mount" of the US Patent Publication No. 5030875, which belongs to the early metal cap (Metal Cap). The package method has a complicated package structure and cannot be reduced in size. U.S. Patent No. 6,654,392, "Package structure for a piezoelectric resonator", which mainly uses a ceramic package to encapsulate a quartz tuning fork vibrator, and improves the ceramic package and the lid structure. Therefore, the quartz tuning fork vibrator has better shock resistance, however, the package is costly and the size cannot be further reduced.
美國專利公告第6531807號專利「壓電裝置」(Piezoelectric Device),主要針對在不同區域之陶瓷基座進行石英振子與振盪電路晶片之封裝,並利用陶瓷基座上之導線做電氣連接,同時振盪電路晶片以樹脂封裝,石英振子則以上蓋做焊接封裝(seam welding);然而,由於兩晶片各放在不同區塊,且以陶瓷基座為封裝體,因此使得面積加大且製作成本居高不下。U.S. Patent No. 6,531,807, "Piezoelectric Device", which is mainly used for encapsulating a quartz crystal oscillator and an oscillating circuit chip on ceramic pedestals in different regions, and electrically connecting the wires on the ceramic pedestal while oscillating The circuit chip is packaged in resin, and the quartz vibrator is covered by the above cover; however, since the two wafers are placed in different blocks and the ceramic base is used as the package, the area is increased and the manufacturing cost is high. No less.
又如美國專利公告第7098580號專利「壓電振盪器」(Piezoelectric Oscillator),主要將石英晶片與積體電路分別以陶瓷封裝體封裝後,再進行電氣連接的動作,雖可有效縮小面積問題,但整體體積仍無法有效降低,同時該封裝方式之製作成本也相對較高。In addition, the "Piezoelectric Oscillator" of the Japanese Patent Publication No. 7098580, which mainly encapsulates a quartz wafer and an integrated circuit in a ceramic package, and then performs an electrical connection operation, can effectively reduce the area problem. However, the overall volume cannot be effectively reduced, and the manufacturing cost of the packaging method is relatively high.
而美國專利公告第7608986號專利「石英晶體振盪器」(Quartz crystal resonator),主要為晶圓級封裝形式,其主要將玻璃材質(blue plate glass)之上蓋與下基座,與石英晶片藉由陽極接合完成一三明治結構。然而,此一三明治結構由於基材與石英之熱膨脹係數不同,因此當溫度變化時會造成內部石英晶片產生熱應力,使得頻率隨溫度而產生偏移現象。因此,需要特別選擇石英晶片之切角與上蓋和下基座材料之熱膨脹係數,才有辦法克服此困難點,然而在製作上和成本上都比較費工。The US Patent Publication No. 7608986 "Quartz crystal resonator" is mainly a wafer-level package form, which mainly uses a blue plate glass upper cover and a lower base, and a quartz wafer. Anode bonding completes a sandwich structure. However, this sandwich structure differs in thermal expansion coefficient between the substrate and the quartz, so that when the temperature changes, the internal quartz wafer generates thermal stress, so that the frequency shifts with temperature. Therefore, it is necessary to specifically select the chamfer angle of the quartz wafer and the thermal expansion coefficient of the upper and lower base materials in order to overcome this difficulty, but it is laborious in terms of production and cost.
上述專利之先前技術,皆無法跳脫目前採用陶瓷基座封裝的窘境,不僅產品成本高且貨源不穩定,且三明治狀的封裝結構所導致之熱應力問題,仍舊無法有效予以解決。The prior art of the above patents cannot escape the current dilemma of using a ceramic pedestal package, which not only has high product cost and unstable supply, but also the thermal stress problem caused by the sandwich-like package structure cannot be effectively solved.
鑒於以上的問題,本發明的主要目的在於提供一種強化氣密性之振子裝置晶圓級封裝結構,跳脫目前採用陶瓷基座封裝的窘境,產品成本降低且貨源穩定,並改善三明治封裝結構所導致之熱應力問題,利用貫孔連接方式,使得製程可批次生產並在晶圓上完成整體封裝;同時,藉由槽狀的封裝環結構設計,除了可輔助對位外,同時具有金屬接合、陽極接合與氧化接合區域之多種接合,加強封裝時之強度與氣密性,並增加產品之可靠度。In view of the above problems, the main object of the present invention is to provide a wafer-level package structure of a vibrator device which is enhanced in airtightness, which is suitable for the current use of a ceramic base package, which has reduced product cost and stable supply, and improves the sandwich package structure. The thermal stress problem caused by the through-hole connection method enables the process to be batch-produced and complete packaged on the wafer. At the same time, the groove-like package ring structure design, in addition to assisting the alignment, has a metal joint. The combination of anodic bonding and oxidative bonding regions enhances the strength and airtightness of the package and increases the reliability of the product.
因此,為達上述目的,本發明所揭露之一種強化氣密性之振子裝置晶圓級封裝結構,乃包含有振子單元、上蓋、基座、封裝環槽以及導電通孔,振子單元設置於基座上,且封裝環槽設置於基座鄰近外緣處,且封裝環槽內具有基座封裝環,供上蓋底部之上蓋封裝環接合而罩設振子單元,並將其予以氣密封裝,而導電通孔垂直貫穿基座並與振子單元電性連接,而提供振子單元之訊號輸出/輸入。故,藉由導電通孔垂直貫穿設置,減少連接線之長度,從而降低因高頻化而衍生的寄生電容/電感效應;同時,藉由封裝環槽與上蓋封裝環、基座封裝環之設計,除了可輔助對位外,同時配合上蓋、基座之接合區域,而可提供多種接合區域,加強封裝時之強度與氣密性,並增加產品之可靠度;另一方面,上蓋封裝環與基座封裝環接合後,使基座與上蓋之邊緣構成完整平面,減少污染物的堆積。Therefore, in order to achieve the above object, a wafer level package structure of a vibrator device for enhancing airtightness disclosed in the present invention includes a vibrator unit, an upper cover, a base, a package ring groove, and a conductive through hole, and the vibrator unit is disposed at the base. a socket, and the package ring groove is disposed adjacent to the outer edge of the base, and the base ring is provided in the package ring groove for engaging the cover ring of the upper cover and covering the vibrator unit, and sealing the air unit. The conductive via extends vertically through the pedestal and is electrically connected to the vibrator unit to provide signal output/input of the vibrator unit. Therefore, by vertically penetrating through the conductive vias, the length of the connection lines is reduced, thereby reducing the parasitic capacitance/inductance effect caused by the high frequency; and at the same time, the design of the package ring groove and the upper cover package ring and the base package ring In addition to assisting the alignment, it also cooperates with the joint area of the upper cover and the base, and can provide various joint areas, strengthen the strength and airtightness of the package, and increase the reliability of the product; on the other hand, the upper cover ring and the cover After the pedestal encapsulation ring is joined, the pedestal and the edge of the upper cover form a complete plane, reducing the accumulation of contaminants.
為使對本發明的目的、特徵及其功能有進一步的了解,茲配合圖式詳細說明如下:In order to further understand the purpose, features and functions of the present invention, the drawings are described in detail as follows:
根據本發明所揭露之強化氣密性之振子裝置晶圓級封裝結構,首先請參閱第1A、1B圖,為本發明強化氣密性之振子裝置晶圓級封裝結構第一實施例之示意圖。According to the wafer level packaging structure of the vibrator device for enhancing airtightness disclosed in the present invention, first, referring to FIGS. 1A and 1B, FIG. 1 is a schematic view showing a first embodiment of a wafer level package structure of a vibrator device for enhancing airtightness according to the present invention.
根據本發明所揭露之強化氣密性之振子裝置晶圓級封裝結構包含有振子單元20、上蓋10、基座40、封裝環槽30以及導電通孔50,振子單元20可為溫度穩定切角(AT-cut)石英晶體振子、音叉型石英晶體振子等石英晶體振子或其它機械共振型式振子,且振子單元20之上、下表面分別具有上表面電極21與下表面電極22(見第2圖),藉以激振振子單元20,並透過導電凸塊23電性連接至底部基座40之基座金屬焊墊41。其中,上表面電極21與下表面電極22分別位於振子單元20之相對側,且導電凸塊23可為銀粉顆粒與樹脂等組成之導電膠材或金屬凸塊,其中金屬凸塊可由金、銅、錫、銀、銦或其合金之一構成。The vibrator device of the enhanced airtightness according to the present invention includes a vibrator unit 20, an upper cover 10, a base 40, a package ring groove 30, and a conductive via 50. The vibrator unit 20 can be a temperature stable chamfer. (AT-cut) a quartz crystal vibrator such as a quartz crystal vibrator or a tuning fork quartz crystal vibrator or other mechanical resonance type vibrator, and the upper surface and the lower surface of the vibrator unit 20 have an upper surface electrode 21 and a lower surface electrode 22, respectively (see FIG. 2) Therefore, the vibrator unit 20 is excited and electrically connected to the base metal pad 41 of the bottom base 40 through the conductive bumps 23. The upper surface electrode 21 and the lower surface electrode 22 are respectively located on opposite sides of the vibrator unit 20, and the conductive bumps 23 may be conductive rubber materials or metal bumps composed of silver powder particles and resin, wherein the metal bumps may be gold or copper. One of tin, silver, indium or one of its alloys.
因此,振子單元20配置於基座40之上,而基座40之鄰近外緣處設置有封裝環槽30,封裝環槽30內具有基座封裝環32,而上蓋10具有對應之上蓋封裝環31;上蓋封裝環31以及基座封裝環32可藉由銅、錫、金、銀、銦及上述金屬之合金、有機聚合物、氧化物等材質所構成;若上蓋封裝環31以及基座封裝環32為金屬材質,且上蓋10及基座40若可導電,則兩者間必須有一層絕緣物,以避免上蓋10及基座40發生導通之情形。因此,可藉由封裝環槽30與上蓋封裝環31之設計,提供對位之功能,藉由上蓋封裝環31置入封裝環槽30內,並與基座封裝環32接合,且上蓋10具有凹槽11來容設振子單元20,而提供振子裝置之封裝。故,上蓋10、基座40透過封裝環槽30、上蓋封裝環31以及基座封裝環32,而可將振子單元20作氣密封裝,其內部環境可為真空或是充填氮氣;上蓋10的材質可為矽、玻璃、石英、陶瓷、金屬材料等,基座40的材質亦可為矽、玻璃、石英、陶瓷等非導電材料,再者,若將其兩者(上蓋10與基座40)選用相同材質,可進一步防止熱應力之問題。Therefore, the vibrator unit 20 is disposed on the base 40, and the package ring groove 30 is disposed adjacent to the outer edge of the base 40, the base ring 32 is provided in the package ring groove 30, and the upper cover 10 has a corresponding upper cover ring. 31; the upper cover ring 31 and the base package ring 32 may be made of copper, tin, gold, silver, indium, and an alloy of the above metals, an organic polymer, an oxide or the like; if the upper cover ring 31 and the base package The ring 32 is made of metal, and if the upper cover 10 and the base 40 are electrically conductive, a layer of insulation must be provided between the two to prevent the upper cover 10 and the base 40 from being electrically connected. Therefore, the function of the alignment can be provided by the design of the package ring groove 30 and the upper cover package ring 31. The upper cover package ring 31 is inserted into the package ring groove 30 and engaged with the base package ring 32, and the upper cover 10 has The recess 11 accommodates the vibrator unit 20 and provides a package for the vibrator assembly. Therefore, the upper cover 10 and the base 40 are transmitted through the package ring groove 30, the upper cover ring 31 and the base package ring 32, and the vibrator unit 20 can be hermetically sealed, and the internal environment can be vacuum or filled with nitrogen; The material may be bismuth, glass, quartz, ceramic, metal material, etc. The material of the susceptor 40 may also be non-conductive materials such as enamel, glass, quartz, ceramic, etc., and if both are used (top cover 10 and pedestal 40) The same material is used to further prevent thermal stress.
同時,上蓋封裝環31與基座封裝環32接合後,上蓋10與基座40之邊緣密合併切齊,而構成完整之平面,以減少污染物的堆積。At the same time, after the upper cover ring 31 is engaged with the base package ring 32, the upper cover 10 and the edge of the base 40 are closely combined and aligned to form a complete plane to reduce the accumulation of contaminants.
導電通孔50垂直貫穿基座40設置,其材質可為金屬導電材質,譬如銅、鎢、鋁、銀、金及上述金屬之合金等,或者,導電通孔50亦可為多晶矽或是導電高分子,只要能導電均可,並且利用矽導通孔(Through silicon via;TSV)技術予以成型。導電通孔50上面電性連接於振子單元20之上表面電極21與下表面電極22,並將其電性連接至基座金屬焊墊41,使其可與外部做電性連接,提供電能與訊號輸入與輸出。The conductive vias 50 are vertically disposed through the susceptor 40 and may be made of a metal conductive material such as copper, tungsten, aluminum, silver, gold, or an alloy of the above metals. Alternatively, the conductive vias 50 may be polysilicon or conductive. Molecules, as long as they can conduct electricity, are formed by using a through silicon via (TSV) technique. The conductive via 50 is electrically connected to the upper surface electrode 21 and the lower surface electrode 22 of the vibrator unit 20, and is electrically connected to the pedestal metal pad 41 so as to be electrically connected to the outside to provide electrical energy. Signal input and output.
而其中,當上蓋封裝環31與基座封裝環32為銅、錫、金、銀、銦及上述金屬之合金時,可藉由金屬熔接接合或熱壓接合(thermal-compression bonding)的方式予以成型;當上蓋封裝環31與基座封裝環32為有機聚合物時,則可利用膠合技術達成封裝;而上蓋封裝環31與基座封裝環32譬如為二氧化矽等氧化性材質時,則可利用陽極接合技術(anodic bonding)達成封裝。同時,上蓋封裝環31與基座封裝環32接合時,基座40與上蓋10的接觸面亦同時予以接合,當基座40與上蓋10為矽、石英與玻璃等材質時,可透過陽極接合技術予以接合;當基座40與上蓋10為矽氧化物等材質時,可透過氧化接合技術(oxide bonding)予以接合;當基座40為陶瓷材料,而上蓋10為金屬材料時,則可透過金屬熔接技術來接合完成封裝。因此,此一封裝結構藉由上蓋10、基座40、以及上蓋封裝環31與基座封裝環32等多重接合區域,加強封裝時之強度與氣密性,並增加產品之可靠度。再者,若是基座封裝環32選擇低熔點之金屬時,與上蓋封裝環31作熔接時,可產生熔融包覆接合效果或金屬共晶接合,進而增加封裝強度與氣密性。Wherein, when the upper cover ring 31 and the base package ring 32 are alloys of copper, tin, gold, silver, indium and the above metal, they may be bonded by means of metal fusion bonding or thermal-compression bonding. When the upper cover ring 31 and the base package ring 32 are organic polymers, the package can be achieved by a bonding technique; and when the upper cover ring 31 and the base package ring 32 are made of an oxidizing material such as cerium oxide, The package can be achieved by anodic bonding. At the same time, when the upper cover ring 31 is engaged with the base package ring 32, the contact faces of the base 40 and the upper cover 10 are simultaneously joined. When the base 40 and the upper cover 10 are made of enamel, quartz and glass, the anodic bonding is possible. The technology is bonded; when the susceptor 40 and the upper cover 10 are made of bismuth oxide or the like, they can be joined by an oxide bonding technique; when the susceptor 40 is made of a ceramic material and the upper cover 10 is made of a metal material, it is permeable. Metal fusion technology is used to join the completed package. Therefore, the package structure has multiple joint areas such as the upper cover 10, the base 40, and the upper cover package ring 31 and the base package ring 32, thereby enhancing the strength and airtightness of the package and increasing the reliability of the product. Further, when the base package ring 32 is made of a metal having a low melting point, when it is welded to the upper cover ring 31, a fusion coating effect or a metal eutectic bonding can be produced, thereby increasing the package strength and airtightness.
另一方面,除了上述上表面電極21與下表面電極22位於振子單元20之相對側外,亦可將其設計為位於相同側。請參閱第3圖,為本發明強化氣密性之振子裝置晶圓級封裝結構第二實施例之示意圖;其中繪示有上表面電極21與下表面電極22位於振子單元20之相同側(見第4圖)。On the other hand, in addition to the above-described upper surface electrode 21 and lower surface electrode 22 being located on opposite sides of the vibrator unit 20, they may be designed to be located on the same side. Please refer to FIG. 3 , which is a schematic diagram of a second embodiment of a wafer level package structure of a vibrator device for enhancing airtightness according to the present invention; wherein the upper surface electrode 21 and the lower surface electrode 22 are located on the same side of the vibrator unit 20 (see Figure 4).
相同地,上蓋10之凹槽11的設計,乃是為了容設振子單元20,故亦可將基座40設計具有凹槽42,而上蓋10設計為平坦,也可達到相同之效果,如第5A、5B圖所示,分別對應於上述第一實施例、第二實施例之變化態樣;此時,封裝環30之內緣則切其於基座40之凹槽42的邊緣,同樣,亦可作為形成基座40之凹槽42的遮罩。Similarly, the recess 11 of the upper cover 10 is designed to accommodate the vibrator unit 20, so that the base 40 can also be designed with a recess 42 and the upper cover 10 is designed to be flat, and the same effect can be achieved. 5A, 5B, respectively, corresponding to the first embodiment and the second embodiment; in this case, the inner edge of the package ring 30 is cut at the edge of the groove 42 of the base 40, too, It can also serve as a mask for forming the recess 42 of the susceptor 40.
本發明所揭露之強化氣密性之振子裝置晶圓級封裝結構,藉由垂直貫穿開設於基座的導電通孔,來使振子單元與底部的基座金屬焊墊形成電性連接,因此,跳脫目前採用陶瓷基座封裝的窘境(包括產品成本高且貨源不穩定等),並改善三明治封裝結構所導致之熱應力問題;同時,減少貴金屬材料用料與進一步微縮尺寸,減少連接線之長度,從而降低因高頻化而衍生的寄生電容/電感效應。且藉由晶圓接合技術可批次生產石英晶體振子,減少人力與生產時間,降低生產成本。同時,封裝環槽以及上蓋封裝環之凹凸輔助定位效果,增加封裝時定位的可靠度;同時封裝環槽之設計使得在封裝過程中,不會因為液態狀之封裝環材質而產生溢流問題。再者,藉由上蓋、基座、以及上蓋封裝環與基座封裝環等多重接合區域,加強封裝時之強度與氣密性,並增加產品之可靠度;且上蓋封裝環與基座封裝環接合後,上蓋與基座之邊緣密合併切齊,而構成完整之平面,以減少污染物的堆積。The wafer-level package structure of the vibrator device for enhancing airtightness disclosed in the present invention electrically connects the vibrator unit to the base metal pad of the bottom portion by vertically penetrating through the conductive via hole opened in the base. The current dip environment of ceramic base package (including high product cost and unstable supply), and improve the thermal stress caused by the sandwich package structure; at the same time, reduce the use of precious metal materials and further shrinkage, reduce the connection line Length, thereby reducing parasitic capacitance/inductance effects due to high frequency. And through the wafer bonding technology, quartz crystal oscillators can be batch-produced, reducing labor and production time and reducing production costs. At the same time, the package ring groove and the upper cover package ring have the concave-convex auxiliary positioning effect, which increases the reliability of the positioning when the package is packaged; at the same time, the design of the package ring groove makes it not overflow due to the liquid package ring material during the packaging process. Furthermore, the upper cover, the base, and the multiple joint areas such as the upper cover package ring and the base package ring enhance the strength and airtightness of the package and increase the reliability of the product; and the upper cover ring and the base package ring After joining, the upper cover is closely combined with the edge of the base to form a complete plane to reduce the accumulation of contaminants.
雖然本發明以前述之實施例揭露如上,然其並非用以限定本發明。在不脫離本發明之精神和範圍內,所為之更動與潤飾,均屬本發明之專利保護範圍。關於本發明所界定之保護範圍請參考所附之申請專利範圍。Although the present invention has been disclosed above in the foregoing embodiments, it is not intended to limit the invention. It is within the scope of the invention to be modified and modified without departing from the spirit and scope of the invention. Please refer to the attached patent application for the scope of protection defined by the present invention.
10...上蓋10. . . Upper cover
11...凹槽11. . . Groove
20...振子單元20. . . Vibrator unit
21...上表面電極twenty one. . . Upper surface electrode
22...下表面電極twenty two. . . Lower surface electrode
23...導電凸塊twenty three. . . Conductive bump
30...封裝環槽30. . . Package ring groove
31...上蓋封裝環31. . . Top cover ring
32...基座封裝環32. . . Base package ring
40...基座40. . . Pedestal
41...基座金屬焊墊41. . . Base metal pad
42...凹槽42. . . Groove
50...導電通孔50. . . Conductive through hole
第1A、1B圖為本發明強化氣密性之振子裝置晶圓級封裝結構第一實施例之示意圖。1A and 1B are schematic views showing a first embodiment of a wafer level package structure of a vibrator device for enhancing airtightness according to the present invention.
第2圖為本發明強化氣密性之振子裝置晶圓級封裝結構之第一實施例中振子單元上、下電極之示意圖。2 is a schematic view showing the upper and lower electrodes of the vibrator unit in the first embodiment of the wafer level package structure of the vibrator device for enhancing airtightness according to the present invention.
第3圖為本發明強化氣密性之振子裝置晶圓級封裝結構第二實施例之示意圖。Fig. 3 is a schematic view showing a second embodiment of the wafer level package structure of the vibrator device for enhancing airtightness according to the present invention.
第4圖為本發明強化氣密性之振子裝置晶圓級封裝結構之第二實施例中振子單元上、下電極之示意圖。4 is a schematic view showing the upper and lower electrodes of the vibrator unit in the second embodiment of the wafer level package structure of the vibrator device for enhancing airtightness according to the present invention.
第5A圖為本發明強化氣密性之振子裝置晶圓級封裝結構之第一實施例中凹槽之變化實施態樣示意圖。FIG. 5A is a schematic view showing a variation of the groove in the first embodiment of the wafer level package structure of the vibrator device for enhancing airtightness according to the present invention.
第5B圖為本發明強化氣密性之振子裝置晶圓級封裝結構之第二實施例中凹槽之變化實施態樣示意圖。FIG. 5B is a schematic view showing a variation of the groove in the second embodiment of the wafer level package structure of the vibrator device for enhancing airtightness according to the present invention.
10...上蓋10. . . Upper cover
11...凹槽11. . . Groove
20...振子單元20. . . Vibrator unit
21...上表面電極twenty one. . . Upper surface electrode
22...下表面電極twenty two. . . Lower surface electrode
23...導電凸塊twenty three. . . Conductive bump
30...封裝環槽30. . . Package ring groove
31...上蓋封裝環31. . . Top cover ring
32...基座封裝環32. . . Base package ring
40...基座40. . . Pedestal
41...基座金屬焊墊41. . . Base metal pad
50...導電通孔50. . . Conductive through hole
Claims (10)
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| CN102874739A (en) * | 2012-10-10 | 2013-01-16 | 中国科学院上海微系统与信息技术研究所 | Self-locking wafer bonding structure and manufacturing method thereof |
| US10002844B1 (en) | 2016-12-21 | 2018-06-19 | Invensas Bonding Technologies, Inc. | Bonded structures |
| US10508030B2 (en) | 2017-03-21 | 2019-12-17 | Invensas Bonding Technologies, Inc. | Seal for microelectronic assembly |
| US11380597B2 (en) | 2017-12-22 | 2022-07-05 | Invensas Bonding Technologies, Inc. | Bonded structures |
| US11004757B2 (en) | 2018-05-14 | 2021-05-11 | Invensas Bonding Technologies, Inc. | Bonded structures |
| US12374641B2 (en) | 2019-06-12 | 2025-07-29 | Adeia Semiconductor Bonding Technologies Inc. | Sealed bonded structures and methods for forming the same |
| CN113555213B (en) * | 2021-08-23 | 2024-12-10 | 姜健偉 | A capacitor packaging structure |
| CN113852360B (en) * | 2021-11-30 | 2022-02-15 | 深圳新声半导体有限公司 | Surface acoustic wave filter packaging method and packaging structure |
| TWI830448B (en) * | 2022-10-19 | 2024-01-21 | 同欣電子工業股份有限公司 | Chip package structure and method for fabricating the same |
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