CN102006030B - Reinforced-airtightness oscillator device wafer-grade packaging structure - Google Patents
Reinforced-airtightness oscillator device wafer-grade packaging structure Download PDFInfo
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- CN102006030B CN102006030B CN201010510183.3A CN201010510183A CN102006030B CN 102006030 B CN102006030 B CN 102006030B CN 201010510183 A CN201010510183 A CN 201010510183A CN 102006030 B CN102006030 B CN 102006030B
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- 238000004806 packaging method and process Methods 0.000 title claims abstract description 67
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 91
- 238000005538 encapsulation Methods 0.000 claims description 37
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 28
- 229910052751 metal Inorganic materials 0.000 claims description 26
- 239000002184 metal Substances 0.000 claims description 26
- 239000010453 quartz Substances 0.000 claims description 26
- 239000000463 material Substances 0.000 claims description 22
- 238000005728 strengthening Methods 0.000 claims description 19
- 239000013078 crystal Substances 0.000 claims description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 10
- 239000010703 silicon Substances 0.000 claims description 10
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- 239000011521 glass Substances 0.000 claims description 8
- 238000005516 engineering process Methods 0.000 claims description 7
- 229920000620 organic polymer Polymers 0.000 claims description 6
- 239000007769 metal material Substances 0.000 claims description 5
- 230000008878 coupling Effects 0.000 claims description 4
- 238000010168 coupling process Methods 0.000 claims description 4
- 238000005859 coupling reaction Methods 0.000 claims description 4
- 238000000465 moulding Methods 0.000 claims description 4
- 239000011347 resin Substances 0.000 claims description 4
- 229920005989 resin Polymers 0.000 claims description 4
- 229910010293 ceramic material Inorganic materials 0.000 claims description 3
- 230000006641 stabilisation Effects 0.000 claims description 3
- 238000011105 stabilization Methods 0.000 claims description 3
- 239000000919 ceramic Substances 0.000 abstract description 11
- 230000008646 thermal stress Effects 0.000 abstract description 7
- 239000010953 base metal Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 description 24
- 238000010586 diagram Methods 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 229910001316 Ag alloy Inorganic materials 0.000 description 3
- 229910001020 Au alloy Inorganic materials 0.000 description 3
- 229910000881 Cu alloy Inorganic materials 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 238000009825 accumulation Methods 0.000 description 3
- 239000003344 environmental pollutant Substances 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 238000005304 joining Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 231100000719 pollutant Toxicity 0.000 description 3
- 239000011135 tin Substances 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910000846 In alloy Inorganic materials 0.000 description 2
- 229910001128 Sn alloy Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910001080 W alloy Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000002322 conducting polymer Substances 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 230000009916 joint effect Effects 0.000 description 1
- 238000004021 metal welding Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- -1 pottery Substances 0.000 description 1
- 239000011342 resin composition Substances 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Landscapes
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
- Oscillators With Electromechanical Resonators (AREA)
Abstract
The invention relates to a reinforced-airtightness oscillator device wafer-grade packaging structure, which comprises an oscillator unit, an upper cover, a base and at least one conductive through hole. The oscillator unit is arranged on the base. A packaging circular groove is formed at the position close to the edge of the upper surface of the base. A base packaging ring is arranged in the packaging circular groove. The lower surface of the upper cover is provided with an upper cover packaging ring corresponding to the packaging circular groove. The upper cover packaging ring is jointed with the base packaging ring so that the upper cover is positioned on the base, covers the oscillator unit and packages the oscillator unit. The conductive through hole vertically passes through the base. The upper surface and the lower surface of the oscillator device are respectively provided with an upper surface electrode and a lower surface electrode electrically connected with the upper end of the conductive through hole. The bottom of the base is provided with a base metal pad electrically connected with the lower end of the conductive through hole. The structure gets rid of the awkward situation of currently packaging the ceramic base and solves the problem of thermal stress caused by a sandwich packaging structure.
Description
Technical field
The present invention relates to oscillator device field, particularly relate to the bubble-tight wafer-level package structure for vibrator device of a kind of strengthening.
Background technology
Quartz component has stable piezoelectric property, and the functions such as accurate and broad reference frequency, FREQUENCY CONTROL, timing function and filtered noise can be provided, and in addition, quartz component also can be as transducers such as motion and pressure, and important optical module; Therefore,, for electronic product, quartz component is being played the part of very important status.
And for the encapsulation of quartz vibrator crystal, perhaps kinds of schemes has been proposed before, for example No. 5030875 patent of U.S. Patent Bulletin " sacrificial quartz crystal bracing frame " (Sacrificial Quartz-crystal Mount), belong to the packaged type of early stage metal cap body (Metal Cap), its overall package complex structure, volume cannot dwindle.No. 6545392 patent of U.S. Patent Bulletin " encapsulating structure of piezoelectric resonator " (PackageStructure for a Piezoelectric Resonator), the main ceramic packaging body that adopts encapsulates quartz tuning-fork oscillator, and improve the structure of base of ceramic (Package) and upper cover (Lid), make quartz tuning-fork oscillator there is preferably shock resistance, but the high and size of this packaging body cost cannot further reduce.
No. 6531807 patent of U.S. Patent Bulletin " piezo-electric device " (Piezoelectric Device), carry out the encapsulation of quartz vibrator and oscillating circuit chip mainly for the base of ceramic in zones of different, and utilize the wire on base of ceramic to be electrically connected, oscillating circuit chip is with resin-encapsulated simultaneously, and quartz vibrator does welding encapsulation (Seam Welding) with upper cover; But, because two chips are respectively placed on different blocks, and taking base of ceramic as packaging body, therefore make area increasing and cost of manufacture high.
And for example No. 7098580 patent of U.S. Patent Bulletin " piezoelectric oscillator " (Piezoelectric Oscillator), mainly by quartz chip and integrated circuit respectively with after ceramic packaging body encapsulation, the action being electrically connected again, though can effectively dwindle area for cutting, but overall volume still cannot effectively reduce, the cost of manufacture of this packaged type is also relatively high simultaneously.
And No. 7608986 patent of U.S. Patent Bulletin " quartz oscillator " (Quartz Crystal Resonator), be mainly wafer-level packaging form, it mainly, by lid and bottom base on glass material (Blue Plate Glass), completes a sandwich structure with quartz chip by anodic bonding.But this sandwich structure, because base material is different from the thermal coefficient of expansion of quartz, therefore can cause inner quartz chip to produce thermal stress in the time of variations in temperature, makes frequency produce shift phenomenon with temperature.Therefore, need the special corner cut of quartz chip and the thermal coefficient of expansion of upper cover and bottom base material selected, just have way to overcome this difficulty, but all relatively take a lot of work on making and on cost.
Above-mentioned prior art, all cannot escape adopts the awkward situation of base of ceramic encapsulation at present, and not only product cost is high and the source of goods is unstable, and the thermal stress issues that causes of the encapsulating structure of sandwich-like, still cannot effectively be solved.
Summary of the invention
Technical problem to be solved by this invention is to provide the bubble-tight wafer-level package structure for vibrator device of a kind of strengthening, by the design of encapsulation annular groove, except can auxiliary para, have more than metal bond and anode oxidation engaging zones simultaneously and plant and engage, strengthen intensity and the air-tightness in when encapsulation, and increase the reliability of product, escape adopts the awkward situation of base of ceramic encapsulation at present simultaneously, product cost reduces and the source of goods is stablized, and improves the thermal stress issues that sandwich encapsulating structure causes.
The technical solution adopted for the present invention to solve the technical problems is: provide a kind of strengthening bubble-tight wafer-level package structure for vibrator device, comprise oscillator unit, upper cover, pedestal and at least one conductive through hole, described oscillator unit is arranged on described pedestal; The neighboring edge place of described pedestal upper surface has encapsulation annular groove; In described encapsulation annular groove, be provided with pedestal packaging ring; Described upper cover lower surface is provided with the upper cover packaging ring mutual corresponding with described encapsulation annular groove; Described upper cover packaging ring engages with described pedestal packaging ring, and described upper cover is positioned on described pedestal, covers at outside described oscillator unit, and described oscillator unit is encapsulated; Described conductive through hole vertically runs through described pedestal; Described oscillator unit upper surface has upper surface electrode, and lower surface has lower surface electrode; Described upper surface electrode and lower surface electrode are electrically connected by conductive projection and described conductive through hole upper end respectively; Described base bottom is provided with pedestal metal pad; Described pedestal metal pad and described conductive through hole lower end are electrically connected.
Described oscillator unit is quartz-crystal unit or mechanical resonance pattern oscillator.
Described quartz-crystal unit is temperature stabilization corner cut quartz-crystal unit or tuning fork-shaped quartz crystal oscillator.
Described upper cover is made up of silicon or glass or quartz or pottery or metal material; Described pedestal is made up of silicon or glass or quartz or ceramic material; Described upper cover packaging ring is made up of metal or organic polymer or oxide material; Described pedestal packaging ring is made up of metal or organic polymer or oxide material.
Described upper cover and pedestal are selected identical material.
Described conductive projection is conducting resin material or metal coupling.
Described upper surface electrode and lower surface electrode are arranged on same side or the opposite side of described oscillator unit.
Described conductive through hole gives moulding by silicon conducting technology.
Described upper cover lower surface central authorities have groove, and described pedestal upper surface is smooth, or described upper cover lower surface is smooth, and described pedestal upper surface central authorities have groove.
Described pedestal and cover rim are closely sealed and trim.
Beneficial effect
Owing to having adopted above-mentioned technical scheme, the present invention compared with prior art, there is following advantage and good effect: the present invention is by the vertical conductive through hole that runs through pedestal, make the pedestal metal pad of oscillator unit and base bottom form electric connection, therefore, escape adopts the awkward situation (comprise the high and source of goods of product cost unstable etc.) of base of ceramic encapsulation at present, and improves the thermal stress issues that sandwich encapsulating structure is caused.Can batch produce quartz-crystal unit by wafer joining technique, reduce manpower and production time, reduce production costs.Meanwhile, encapsulation annular groove and upper cover packaging ring are carried out concavo-convex assist location, the reliability of location while increasing encapsulation, and the encapsulation annular groove of pedestal is in encapsulation process, can not produce overflow problem because of the packaging ring material of liquid state.In addition, by multiple engaging zones such as upper cover, pedestal, upper cover packaging ring and pedestal packaging rings, strengthen intensity and the air-tightness in when encapsulation, and increase the reliability of product.After upper cover packaging ring engages with pedestal packaging ring, the marginal fit of upper cover and pedestal also trims, and the plane of complete has reduced the accumulation of pollutant.
Brief description of the drawings
Fig. 1 is the bubble-tight wafer-level package structure for vibrator device schematic diagram of the strengthening of first embodiment of the invention;
Fig. 2 is upper/lower electrode schematic diagram in first embodiment of the invention;
Fig. 3 is Fig. 1 upper cover and pedestal disintegration figure;
Fig. 4 is the bubble-tight wafer-level package structure for vibrator device schematic diagram of the strengthening of second embodiment of the invention;
Fig. 5 is upper/lower electrode schematic diagram in second embodiment of the invention;
Fig. 6 is the schematic diagram of first embodiment of the invention further groove change aspect;
Fig. 7 is the schematic diagram of second embodiment of the invention further groove change aspect.
Embodiment
Below in conjunction with specific embodiment, further set forth the present invention.Should be understood that these embodiment are only not used in and limit the scope of the invention for the present invention is described.In addition should be understood that those skilled in the art can make various changes or modifications the present invention after having read the content of the present invention's instruction, these equivalent form of values fall within the application's appended claims limited range equally.
Shown in Fig. 1 is the bubble-tight wafer-level package structure for vibrator device of strengthening of first embodiment of the invention.The bubble-tight wafer-level package structure for vibrator device oscillator of this strengthening unit 20, upper cover 10, pedestal 40 and conductive through hole 50.Oscillator unit 20 is quartz-crystal unit or mechanical resonance pattern oscillator, and wherein, quartz-crystal unit can be temperature stabilization corner cut quartz-crystal unit or tuning fork-shaped quartz crystal oscillator.The upper surface of oscillator unit 20 and lower surface have respectively upper surface electrode 21 and lower surface electrode 22, and exciting oscillator unit 20 is thus electrically connected to the pedestal metal pad 41 of pedestal 40 bottoms by conductive projection 23.Upper surface electrode 21 and lower surface electrode 22 lay respectively at the opposite side of oscillator unit 20, and conductive projection 23 can be conducting resin material or metal coupling, and wherein, conducting resin material can obtain by silver powder particles and resin composition; Metal coupling can be made up of one of gold, copper, tin, silver, indium or its alloy.
As shown in Figure 3, oscillator unit 20 is configured on pedestal 40, and pedestal 40 upper surface neighboring edge places have encapsulation annular groove 30, in encapsulation annular groove 30, has pedestal packaging ring 32, and the lower surface of upper cover 10 has the upper cover packaging ring 31 mutual corresponding with encapsulation annular groove 30.Upper cover packaging ring 31 and pedestal packaging ring 32 all can be made up of materials such as the alloy of copper, tin, gold, silver, indium and above-mentioned metal, organic polymer, oxides.If when upper cover packaging ring 31 and pedestal packaging ring 32 are metal material, and upper cover 10 and pedestal 40 all can conduct electricity, and between upper cover packaging ring 31 and pedestal packaging ring 32, must have one deck insulant, to avoid upper cover 10 and pedestal 40 that the situation of conducting occurs.Design by encapsulation annular groove 30 with upper cover packaging ring 31, the auxiliary para of pedestal 40 with upper cover 10 is provided, upper cover packaging ring 31 is inserted in encapsulation annular groove 30, and be bonded with each other with pedestal packaging ring 32, make upper cover 10 be positioned at the top of pedestal 40, the groove 11 of upper cover 10 lower surfaces for being installed with oscillator unit 20, provides the encapsulation of oscillator device just.Therefore upper cover 10 and pedestal 40 are by encapsulation annular groove 30, upper cover packaging ring 31 and pedestal packaging ring 32 by oscillator unit 20 level Hermetic Package, its internal environment is vacuum state or filling nitrogen.Upper cover 10 can be silicon, glass, quartz, pottery, metal material etc., the material of pedestal 40 can be the non-conducting materials such as silicon, glass, quartz, pottery equally, moreover, if both (upper covers 10 and pedestal 40) are selected to identical material, can further prevent the problem of thermal stress.
After upper cover packaging ring 31 and pedestal packaging ring 32 are bonded with each other, can and trim the marginal fit of upper cover 10 and pedestal 40, thereby the plane of complete reduces the accumulation of pollutant.In the time that upper cover packaging ring 31 and pedestal packaging ring 32 are the alloy of copper, tin, gold, silver, indium and above-mentioned metal, can engage or the mode of hot press gives moulding by metal welding; In the time that upper cover packaging ring 31 and pedestal packaging ring 32 are organic polymer, can utilize bonding technique to reach encapsulation; In the time of the oxidizability materials such as upper cover packaging ring 31 and pedestal packaging ring 32 are silicon dioxide, can utilize anodic bonding technology to reach encapsulation.Meanwhile, when upper cover packaging ring 31 engages with pedestal packaging ring 32, pedestal 40 is also engaged with the contact-making surface of upper cover 10 simultaneously, in the time that pedestal 40 and upper cover 10 are the materials such as silicon, quartz or glass, can be engaged by anodic bonding technology; In the time of the materials such as pedestal 40 and upper cover 10 are Si oxide, can be engaged by oxidation joining technique; When pedestal 40 is ceramic material, and upper cover 10 is while being metal material, can engage encapsulation by Metal Melting connection technology.Therefore, this encapsulating structure is by multiple engaging zones such as upper cover 10, pedestal 40, upper cover packaging ring 31 and pedestal packaging rings 32, intensity and air-tightness while strengthening encapsulation, and increase the reliability of product.Moreover, if when pedestal packaging ring 32 is selected the metal of low melting point, while doing welding with upper cover packaging ring 31, can produce melting coated joint effect or metal eutectic and engage, and then increase package strength and air-tightness.
Conductive through hole 50 vertically runs through pedestal 40, its material can be can be metal conductive materials, such as the alloy of copper, tungsten, aluminium, silver, gold and above-mentioned metal etc., can be also polysilicon or conducting polymer, as long as all can conduct electricity, and utilize silicon through hole technology to give moulding.Conductive through hole 50 upper ends are electrically connected at the upper surface electrode 21 and lower surface electrode 22 of oscillator unit 20, lower end and pedestal metal pad 41 are electrically connected, upper surface electrode 21 and lower surface electrode 22 can be electrically connected with pedestal metal pad 41, oscillator unit 20 can be electrically connected with outside, electric energy and signal input and output are provided.
On the other hand, except above-mentioned upper surface electrode 21 is positioned at the opposite side of oscillator unit 20 with lower surface electrode 22, also can be designed to be positioned at same side.Shown in Fig. 4 is the schematic diagram that the present invention strengthens bubble-tight wafer-level package structure for vibrator device the second embodiment.Upper surface electrode 21 and lower surface electrode 22 are positioned at the same side of oscillator unit 20 as we know from the figure, and shown in Fig. 5 is the second upper and lower surface electrode schematic diagram in embodiment oscillator unit.
In the same manner, the design of upper cover 10 lower surface grooves 11, in order to be installed with oscillator unit 20, therefore also pedestal 40 upper surfaces can be designed to have the shape of groove 42, and upper cover 10 lower surfaces are designed to smooth, also can reach identical effect, as shown in Figure 6 and Figure 7, the groove that corresponds respectively to the first embodiment and the second embodiment changes aspect.
Be not difficult to find, the present invention is by vertically running through the conductive through hole of pedestal, make the pedestal metal pad of oscillator unit and base bottom form electric connection, therefore, escape adopts the awkward situation (comprise the high and source of goods of product cost unstable etc.) of base of ceramic encapsulation at present, and improves the thermal stress issues that sandwich encapsulating structure is caused.Can batch produce quartz-crystal unit by wafer joining technique, reduce manpower and production time, reduce production costs.Meanwhile, encapsulation annular groove and upper cover packaging ring are carried out concavo-convex assist location, the reliability of location while increasing encapsulation, and the encapsulation annular groove of pedestal is in encapsulation process, can not produce overflow problem because of the packaging ring material of liquid state.In addition, by multiple engaging zones such as upper cover, pedestal, upper cover packaging ring and pedestal packaging rings, strengthen intensity and the air-tightness in when encapsulation, and increase the reliability of product.After upper cover packaging ring engages with pedestal packaging ring, the marginal fit of upper cover and pedestal also trims, and the plane of complete has reduced the accumulation of pollutant.
Claims (10)
1. the bubble-tight wafer-level package structure for vibrator device of strengthening, comprise oscillator unit (20), upper cover (10), pedestal (40) and at least one conductive through hole (50), it is characterized in that, described oscillator unit (20) is arranged on described pedestal (40); The neighboring edge place of described pedestal (40) upper surface has encapsulation annular groove (30); In described encapsulation annular groove (30), be provided with pedestal packaging ring (32); Described upper cover (10) lower surface is provided with the upper cover packaging ring (31) mutual corresponding with described encapsulation annular groove (30); Described upper cover packaging ring (31) engages with described pedestal packaging ring (32), described upper cover (10) is positioned on described pedestal (40), cover at outside described oscillator unit (20), and described oscillator unit (20) is encapsulated; Described conductive through hole (50) vertically runs through described pedestal (40); Described oscillator unit (20) upper surface has upper surface electrode (21), and lower surface has lower surface electrode (22); Described upper surface electrode (21) and lower surface electrode (22) are electrically connected by conductive projection (23) and described conductive through hole (50) upper end respectively; Described pedestal (40) bottom is provided with pedestal metal pad (41); Described pedestal metal pad (41) is electrically connected with described conductive through hole (50) lower end.
2. the bubble-tight wafer-level package structure for vibrator device of strengthening according to claim 1, is characterized in that, described oscillator unit (20) is quartz-crystal unit or mechanical resonance pattern oscillator.
3. the bubble-tight wafer-level package structure for vibrator device of strengthening according to claim 2, is characterized in that, described quartz-crystal unit is temperature stabilization corner cut quartz-crystal unit or tuning fork-shaped quartz crystal oscillator.
4. the bubble-tight wafer-level package structure for vibrator device of strengthening according to claim 1, is characterized in that, described upper cover (10) is made up of silicon or glass or quartz or pottery or metal material; Described pedestal (40) is made up of silicon or glass or quartz or ceramic material; Described upper cover packaging ring (31) is made up of metal or organic polymer or oxide material; Described pedestal packaging ring (32) is made up of metal or organic polymer or oxide material.
5. the bubble-tight wafer-level package structure for vibrator device of strengthening according to claim 4, is characterized in that, described upper cover (10) and pedestal (40) are selected identical material.
6. the bubble-tight wafer-level package structure for vibrator device of strengthening according to claim 1, is characterized in that, described conductive projection (23) is conducting resin material or metal coupling.
7. the bubble-tight wafer-level package structure for vibrator device of strengthening according to claim 1, it is characterized in that, described upper surface electrode (21) and lower surface electrode (22) are arranged on same side or the opposite side of described oscillator unit (20).
8. the bubble-tight wafer-level package structure for vibrator device of strengthening according to claim 1, is characterized in that, described conductive through hole (50) gives moulding by silicon conducting technology.
9. the bubble-tight wafer-level package structure for vibrator device of strengthening according to claim 1, it is characterized in that, described upper cover (10) lower surface central authorities have groove, described pedestal (40) upper surface is smooth, or described upper cover (10) lower surface is smooth, described pedestal (40) upper face center has groove.
10. the bubble-tight wafer-level package structure for vibrator device of strengthening according to claim 1, is characterized in that, described pedestal (40) and upper cover (10) marginal fit also trim.
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| CN201010510183.3A CN102006030B (en) | 2010-10-18 | 2010-10-18 | Reinforced-airtightness oscillator device wafer-grade packaging structure |
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| CN201010510183.3A CN102006030B (en) | 2010-10-18 | 2010-10-18 | Reinforced-airtightness oscillator device wafer-grade packaging structure |
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| CN107888159B (en) * | 2017-11-22 | 2021-04-16 | 铜陵日兴电子有限公司 | A high-sealing quartz crystal resonator |
| CN108249385A (en) * | 2018-01-15 | 2018-07-06 | 烟台艾睿光电科技有限公司 | A kind of MEMS package weld assembly |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101425790A (en) * | 2003-05-16 | 2009-05-06 | 精工爱普生株式会社 | Tuning-fork-type piezoelectric resonator element and tuning-fork-type piezoelectric vibrator |
| CN201298830Y (en) * | 2008-11-12 | 2009-08-26 | 东莞创群石英晶体有限公司 | Novel sheet type quartz crystal resonator |
| CN101820264A (en) * | 2010-04-06 | 2010-09-01 | 台晶(宁波)电子有限公司 | Through-hole type wafer-level package structure for vibrator device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN201821326U (en) * | 2010-10-18 | 2011-05-04 | 台晶(宁波)电子有限公司 | Wafer-level package structure of oscillator device with enhanced air tightness |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101425790A (en) * | 2003-05-16 | 2009-05-06 | 精工爱普生株式会社 | Tuning-fork-type piezoelectric resonator element and tuning-fork-type piezoelectric vibrator |
| CN201298830Y (en) * | 2008-11-12 | 2009-08-26 | 东莞创群石英晶体有限公司 | Novel sheet type quartz crystal resonator |
| CN101820264A (en) * | 2010-04-06 | 2010-09-01 | 台晶(宁波)电子有限公司 | Through-hole type wafer-level package structure for vibrator device |
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