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TWI412631B - 用於埋設ULSI(Ultra Large-Scale Integration; 超大型積體電路)微細銅配線之銅電鍍液 - Google Patents

用於埋設ULSI(Ultra Large-Scale Integration; 超大型積體電路)微細銅配線之銅電鍍液 Download PDF

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Publication number
TWI412631B
TWI412631B TW099121020A TW99121020A TWI412631B TW I412631 B TWI412631 B TW I412631B TW 099121020 A TW099121020 A TW 099121020A TW 99121020 A TW99121020 A TW 99121020A TW I412631 B TWI412631 B TW I412631B
Authority
TW
Taiwan
Prior art keywords
plating solution
copper
ulsi
copper plating
embedding
Prior art date
Application number
TW099121020A
Other languages
English (en)
Chinese (zh)
Other versions
TW201107537A (en
Inventor
關口淳之輔
高橋祐史
相場玲宏
Original Assignee
日鑛金屬股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日鑛金屬股份有限公司 filed Critical 日鑛金屬股份有限公司
Publication of TW201107537A publication Critical patent/TW201107537A/zh
Application granted granted Critical
Publication of TWI412631B publication Critical patent/TWI412631B/zh

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Classifications

    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00Electroplating: Baths therefor
    • C25D3/02Electroplating: Baths therefor from solutions
    • C25D3/38Electroplating: Baths therefor from solutions of copper
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00Electroplating characterised by the article coated
    • C25D7/06Wires; Strips; Foils
    • C25D7/0607Wires
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00Electroplating characterised by the article coated
    • C25D7/12Semiconductors
    • C25D7/123Semiconductors first coated with a seed layer or a conductive layer
    • H10P14/47
    • H10W20/056
    • H10W20/425

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electroplating And Plating Baths Therefor (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
TW099121020A 2009-07-01 2010-06-28 用於埋設ULSI(Ultra Large-Scale Integration; 超大型積體電路)微細銅配線之銅電鍍液 TWI412631B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009156929 2009-07-01

Publications (2)

Publication Number Publication Date
TW201107537A TW201107537A (en) 2011-03-01
TWI412631B true TWI412631B (zh) 2013-10-21

Family

ID=43410924

Family Applications (1)

Application Number Title Priority Date Filing Date
TW099121020A TWI412631B (zh) 2009-07-01 2010-06-28 用於埋設ULSI(Ultra Large-Scale Integration; 超大型積體電路)微細銅配線之銅電鍍液

Country Status (4)

Country Link
US (2) US20120103820A1 (ja)
JP (1) JP5809055B2 (ja)
TW (1) TWI412631B (ja)
WO (1) WO2011001847A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI636245B (zh) * 2017-11-21 2018-09-21 財團法人金屬工業研究發展中心 金屬腐蝕監測系統及方法

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012092366A (ja) * 2010-10-25 2012-05-17 Imec 銅の電着方法
JP5903706B2 (ja) * 2011-08-25 2016-04-13 石原ケミカル株式会社 銅フィリング方法及び当該方法を適用した電子部品の製造方法
KR20140135007A (ko) * 2013-05-15 2014-11-25 삼성전기주식회사 인쇄회로기판용 동 도금액 조성물 및 이를 이용한 비아 홀 충전방법
WO2019044651A1 (ja) 2017-08-31 2019-03-07 株式会社Adeka 電解めっき液用添加剤、該電解めっき液用添加剤を含有する電解めっき液及び該電解めっき液を用いた電解めっき方法
CN116888308A (zh) 2021-02-15 2023-10-13 株式会社Adeka 电镀液用添加剂、电镀液、电镀方法和金属层的制造方法
JP7572498B1 (ja) 2023-04-21 2024-10-23 上村工業株式会社 めっき皮膜の製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001083854A2 (en) * 2000-04-27 2001-11-08 Intel Corporation Electroplating bath composition and method of using

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6197181B1 (en) * 1998-03-20 2001-03-06 Semitool, Inc. Apparatus and method for electrolytically depositing a metal on a microelectronic workpiece
US6444110B2 (en) * 1999-05-17 2002-09-03 Shipley Company, L.L.C. Electrolytic copper plating method
US6355153B1 (en) * 1999-09-17 2002-03-12 Nutool, Inc. Chip interconnect and packaging deposition methods and structures
JP3367655B2 (ja) * 1999-12-24 2003-01-14 島田理化工業株式会社 めっき処理装置及びめっき処理方法
JP2002004081A (ja) * 2000-06-16 2002-01-09 Learonal Japan Inc シリコンウエハーへの電気めっき方法
DE60123189T2 (de) * 2000-10-13 2007-10-11 Shipley Co., L.L.C., Marlborough Keimschichtreparatur und Elektroplattierungsbad
KR20020029626A (ko) * 2000-10-13 2002-04-19 마티네즈 길러모 전해질
JP4603812B2 (ja) * 2003-05-12 2010-12-22 ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. 改良されたスズめっき方法
KR101424824B1 (ko) * 2005-11-18 2014-08-01 레플리서러스 그룹 에스에이에스 다중 층 구조 형성 방법
JP2007197809A (ja) * 2006-01-30 2007-08-09 Fujifilm Corp めっき処理方法、導電性膜および透光性電磁波シールド膜
US7799684B1 (en) * 2007-03-05 2010-09-21 Novellus Systems, Inc. Two step process for uniform across wafer deposition and void free filling on ruthenium coated wafers

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001083854A2 (en) * 2000-04-27 2001-11-08 Intel Corporation Electroplating bath composition and method of using

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI636245B (zh) * 2017-11-21 2018-09-21 財團法人金屬工業研究發展中心 金屬腐蝕監測系統及方法

Also Published As

Publication number Publication date
US20120103820A1 (en) 2012-05-03
JPWO2011001847A1 (ja) 2012-12-13
TW201107537A (en) 2011-03-01
US20140158546A1 (en) 2014-06-12
WO2011001847A1 (ja) 2011-01-06
JP5809055B2 (ja) 2015-11-10

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