TWI480385B - Magnetic sputtering target - Google Patents
Magnetic sputtering target Download PDFInfo
- Publication number
- TWI480385B TWI480385B TW099137403A TW99137403A TWI480385B TW I480385 B TWI480385 B TW I480385B TW 099137403 A TW099137403 A TW 099137403A TW 99137403 A TW99137403 A TW 99137403A TW I480385 B TWI480385 B TW I480385B
- Authority
- TW
- Taiwan
- Prior art keywords
- target
- less
- composition
- wtppm
- magnetic material
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
- G11B5/851—Coating a support with a magnetic layer by sputtering
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C19/00—Alloys based on nickel or cobalt
- C22C19/03—Alloys based on nickel or cobalt based on nickel
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C19/00—Alloys based on nickel or cobalt
- C22C19/07—Alloys based on nickel or cobalt based on cobalt
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C38/00—Ferrous alloys, e.g. steel alloys
- C22C38/002—Ferrous alloys, e.g. steel alloys containing In, Mg, or other elements not provided for in one single group C22C38/001 - C22C38/60
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C38/00—Ferrous alloys, e.g. steel alloys
- C22C38/08—Ferrous alloys, e.g. steel alloys containing nickel
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C38/00—Ferrous alloys, e.g. steel alloys
- C22C38/10—Ferrous alloys, e.g. steel alloys containing cobalt
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C38/00—Ferrous alloys, e.g. steel alloys
- C22C38/10—Ferrous alloys, e.g. steel alloys containing cobalt
- C22C38/105—Ferrous alloys, e.g. steel alloys containing cobalt containing Co and Ni
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
- H01F41/18—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates by cathode sputtering
- H01F41/183—Sputtering targets therefor
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physical Vapour Deposition (AREA)
- Magnetic Heads (AREA)
- Thin Magnetic Films (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009281540 | 2009-12-11 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201120224A TW201120224A (en) | 2011-06-16 |
| TWI480385B true TWI480385B (zh) | 2015-04-11 |
Family
ID=44145413
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW099137403A TWI480385B (zh) | 2009-12-11 | 2010-11-01 | Magnetic sputtering target |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US9269389B2 (ja) |
| EP (1) | EP2511397B1 (ja) |
| JP (1) | JP4837805B2 (ja) |
| CN (1) | CN102652184B (ja) |
| MY (1) | MY160809A (ja) |
| TW (1) | TWI480385B (ja) |
| WO (1) | WO2011070860A1 (ja) |
Families Citing this family (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8679268B2 (en) | 2010-07-20 | 2014-03-25 | Jx Nippon Mining & Metals Corporation | Sputtering target of ferromagnetic material with low generation of particles |
| US9181617B2 (en) | 2010-07-20 | 2015-11-10 | Jx Nippon Mining & Metals Corporation | Sputtering target of ferromagnetic material with low generation of particles |
| MY156386A (en) | 2010-08-31 | 2016-02-15 | Jx Nippon Mining & Metals Corp | Fe-pt-based ferromagnetic material sputtering target |
| SG190773A1 (en) | 2010-12-21 | 2013-07-31 | Jx Nippon Mining & Metals Corp | Sputtering target for magnetic recording film, and process for production thereof |
| MY161774A (en) * | 2011-09-26 | 2017-05-15 | Jx Nippon Mining & Metals Corp | Fe-pt-c based sputtering target |
| CN104126026B (zh) | 2012-02-23 | 2016-03-23 | 吉坤日矿日石金属株式会社 | 含有铬氧化物的强磁性材料溅射靶 |
| CN104170015B (zh) | 2012-03-09 | 2018-08-31 | 吉坤日矿日石金属株式会社 | 磁记录介质用溅射靶及其制造方法 |
| US9540724B2 (en) | 2012-06-18 | 2017-01-10 | Jx Nippon Mining & Metals Corporation | Sputtering target for magnetic recording film |
| SG11201404072YA (en) | 2012-07-20 | 2014-10-30 | Jx Nippon Mining & Metals Corp | Sputtering target for forming magnetic recording film and process for producing same |
| US10090012B2 (en) | 2012-08-31 | 2018-10-02 | Jx Nippon Mining & Metals Corporation | Fe-bases magnetic material sintered compact |
| WO2014045744A1 (ja) * | 2012-09-21 | 2014-03-27 | Jx日鉱日石金属株式会社 | Fe-Pt系磁性材焼結体 |
| CN103489557B (zh) * | 2013-09-22 | 2016-06-15 | 清华大学 | 一种室温透明铁磁半导体材料及其制备方法 |
| KR20180088491A (ko) | 2013-11-28 | 2018-08-03 | 제이엑스금속주식회사 | 자성재 스퍼터링 타깃 및 그 제조 방법 |
| JP6227419B2 (ja) * | 2014-01-08 | 2017-11-08 | Jx金属株式会社 | 磁性材スパッタリングターゲットの製造方法 |
| JP6279326B2 (ja) * | 2014-01-08 | 2018-02-14 | Jx金属株式会社 | スパッタリングターゲットの製造方法 |
| JP6285043B2 (ja) | 2014-09-22 | 2018-03-07 | Jx金属株式会社 | 磁気記録膜形成用スパッタリングターゲット及びその製造方法 |
| KR101953493B1 (ko) * | 2014-09-30 | 2019-02-28 | 제이엑스금속주식회사 | 스퍼터링 타깃용 모합금 및 스퍼터링 타깃의 제조 방법 |
| EP3211116B1 (en) * | 2015-03-04 | 2020-10-21 | JX Nippon Mining & Metals Corporation | Magnetic-material sputtering target and method for producing same |
| US9752377B2 (en) | 2015-03-20 | 2017-09-05 | Cardinal Cg Company | Nickel-aluminum blocker film controlled transmission coating |
| US9469566B2 (en) | 2015-03-20 | 2016-10-18 | Cardinal Cg Company | Nickel-aluminum blocker film low-emissivity coatings |
| US9745792B2 (en) | 2015-03-20 | 2017-08-29 | Cardinal Cg Company | Nickel-aluminum blocker film multiple cavity controlled transmission coating |
| WO2016183502A1 (en) * | 2015-05-14 | 2016-11-17 | Materion Corporation | Sputtering target |
| JP2017057490A (ja) | 2015-09-18 | 2017-03-23 | 山陽特殊製鋼株式会社 | Co−Fe−B系合金ターゲット材 |
| JP6660130B2 (ja) * | 2015-09-18 | 2020-03-04 | 山陽特殊製鋼株式会社 | CoFeB系合金ターゲット材 |
| MY191374A (en) * | 2016-12-28 | 2022-06-21 | Jx Nippon Mining & Metals Corp | Magnetic material sputtering target and method for manufacturing same |
| US11028012B2 (en) | 2018-10-31 | 2021-06-08 | Cardinal Cg Company | Low solar heat gain coatings, laminated glass assemblies, and methods of producing same |
| WO2020166380A1 (ja) * | 2019-02-13 | 2020-08-20 | 三井金属鉱業株式会社 | スパッタリングターゲット材 |
| JP7382142B2 (ja) * | 2019-02-26 | 2023-11-16 | 山陽特殊製鋼株式会社 | スパッタリングターゲット材に適した合金 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020106297A1 (en) * | 2000-12-01 | 2002-08-08 | Hitachi Metals, Ltd. | Co-base target and method of producing the same |
Family Cites Families (31)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5538565A (en) | 1985-08-13 | 1996-07-23 | Seiko Epson Corporation | Rare earth cast alloy permanent magnets and methods of preparation |
| US5282946A (en) | 1991-08-30 | 1994-02-01 | Mitsubishi Materials Corporation | Platinum-cobalt alloy sputtering target and method for manufacturing same |
| US6398880B1 (en) | 1996-11-29 | 2002-06-04 | Heraeus, Inc. | Magnetic data-storage targets and methods for preparation |
| JP2000282229A (ja) | 1999-03-29 | 2000-10-10 | Hitachi Metals Ltd | CoPt系スパッタリングターゲットおよびその製造方法ならびにこれを用いた磁気記録膜およびCoPt系磁気記録媒体 |
| JP2001107226A (ja) | 1999-10-01 | 2001-04-17 | Hitachi Metals Ltd | Co系ターゲットおよびその製造方法 |
| US6599377B2 (en) | 1999-10-01 | 2003-07-29 | Heraeus, Inc. | Wrought processing of brittle target alloy for sputtering applications |
| JP4573381B2 (ja) | 1999-12-24 | 2010-11-04 | 三井金属鉱業株式会社 | スパッタリングターゲットの製造方法 |
| JP2001236643A (ja) | 2000-02-23 | 2001-08-31 | Fuji Electric Co Ltd | 磁気記録媒体製造用スパッタリングターゲット、それを用いた磁気記録媒体の製造方法および磁気記録媒体 |
| JP2002226970A (ja) * | 2000-12-01 | 2002-08-14 | Hitachi Metals Ltd | Co系ターゲットおよびその製造方法 |
| US7141208B2 (en) * | 2003-04-30 | 2006-11-28 | Hitachi Metals, Ltd. | Fe-Co-B alloy target and its production method, and soft magnetic film produced by using such target, and magnetic recording medium and TMR device |
| JP4827033B2 (ja) | 2004-03-01 | 2011-11-30 | Jx日鉱日石金属株式会社 | 表面欠陥の少ないスパッタリングターゲット及びその表面加工方法 |
| WO2005093124A1 (ja) * | 2004-03-26 | 2005-10-06 | Nippon Mining & Metals Co., Ltd. | Co-Cr-Pt-B系合金スパッタリングターゲット |
| US7381282B2 (en) | 2004-04-07 | 2008-06-03 | Hitachi Metals, Ltd. | Co alloy target and its production method, soft magnetic film for perpendicular magnetic recording and perpendicular magnetic recording medium |
| TWI270060B (en) | 2004-06-07 | 2007-01-01 | Showa Denko Kk | Magnetic recording medium, production process thereof, and magnetic recording and reproducing apparatus |
| JP4466925B2 (ja) | 2004-08-10 | 2010-05-26 | 日鉱金属株式会社 | フレキシブル銅基板用バリア膜及びバリア膜形成用スパッタリングターゲット |
| US9034153B2 (en) | 2006-01-13 | 2015-05-19 | Jx Nippon Mining & Metals Corporation | Nonmagnetic material particle dispersed ferromagnetic material sputtering target |
| TW200808980A (en) | 2006-03-31 | 2008-02-16 | Mitsubishi Materials Corp | Method for producing Co-based sintered alloy sputtering target used for forming magnetic recording film with reduced generation of particles, and Co-based sintered alloy sputtering target used for forming magnetic recording film |
| US20080105542A1 (en) * | 2006-11-08 | 2008-05-08 | Purdy Clifford C | System and method of manufacturing sputtering targets |
| JP2008121071A (ja) * | 2006-11-13 | 2008-05-29 | Sanyo Special Steel Co Ltd | 軟磁性FeCo系ターゲット材 |
| JP5155565B2 (ja) | 2007-01-04 | 2013-03-06 | 三井金属鉱業株式会社 | CoCrPt系スパッタリングターゲットおよびその製造方法 |
| US20080173543A1 (en) | 2007-01-19 | 2008-07-24 | Heraeus Inc. | Low oxygen content, crack-free heusler and heusler-like alloys & deposition sources & methods of making same |
| CN101230425A (zh) * | 2007-01-19 | 2008-07-30 | 贺利氏有限公司 | 低氧含量、无裂纹霍伊斯勒和类霍伊斯勒合金以及沉积源及其制造方法 |
| US7754027B2 (en) | 2007-08-27 | 2010-07-13 | China Steel Corporation | Method for manufacturing a sputtering target |
| MY145087A (en) | 2008-03-28 | 2011-12-30 | Jx Nippon Mining & Metals Corp | Sputtering target of nonmagnetic-particle-dispersed ferromagnetic material |
| CN102066025A (zh) | 2008-08-28 | 2011-05-18 | Jx日矿日石金属株式会社 | 包含贵金属粉末和氧化物粉末的混合粉末的制造方法及包含贵金属粉末和氧化物粉末的混合粉末 |
| SG173128A1 (en) | 2009-03-03 | 2011-08-29 | Jx Nippon Mining & Metals Corp | Sputtering target and process for producing same |
| MY150804A (en) | 2009-03-27 | 2014-02-28 | Jx Nippon Mining & Metals Corp | Nonmagnetic material particle-dispersed ferromagnetic material sputtering target |
| CN102482764B (zh) | 2009-08-06 | 2014-06-18 | 吉坤日矿日石金属株式会社 | 无机物粒子分散型溅射靶 |
| US8679268B2 (en) | 2010-07-20 | 2014-03-25 | Jx Nippon Mining & Metals Corporation | Sputtering target of ferromagnetic material with low generation of particles |
| MY157110A (en) | 2010-12-17 | 2016-05-13 | Jx Nippon Mining & Metals Corp | Sputtering target for magnetic recording film and method for producing same |
| JP5654126B2 (ja) | 2011-06-30 | 2015-01-14 | Jx日鉱日石金属株式会社 | Co−Cr−Pt−B系合金スパッタリングターゲット及びその製造方法 |
-
2010
- 2010-10-21 WO PCT/JP2010/068552 patent/WO2011070860A1/ja not_active Ceased
- 2010-10-21 JP JP2011518968A patent/JP4837805B2/ja active Active
- 2010-10-21 EP EP10835782.3A patent/EP2511397B1/en active Active
- 2010-10-21 MY MYPI2012002021A patent/MY160809A/en unknown
- 2010-10-21 CN CN201080056188.1A patent/CN102652184B/zh active Active
- 2010-10-21 US US13/513,387 patent/US9269389B2/en active Active
- 2010-11-01 TW TW099137403A patent/TWI480385B/zh not_active IP Right Cessation
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020106297A1 (en) * | 2000-12-01 | 2002-08-08 | Hitachi Metals, Ltd. | Co-base target and method of producing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| EP2511397A1 (en) | 2012-10-17 |
| US9269389B2 (en) | 2016-02-23 |
| EP2511397B1 (en) | 2018-09-26 |
| EP2511397A4 (en) | 2014-01-01 |
| JP4837805B2 (ja) | 2011-12-14 |
| CN102652184A (zh) | 2012-08-29 |
| CN102652184B (zh) | 2014-08-06 |
| MY160809A (en) | 2017-03-31 |
| JPWO2011070860A1 (ja) | 2013-04-22 |
| US20120241316A1 (en) | 2012-09-27 |
| WO2011070860A1 (ja) | 2011-06-16 |
| TW201120224A (en) | 2011-06-16 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |