TWI476301B - Fine crystalline and amorphous coexisting gold alloy, plating film, plating solution, and plating method for said film - Google Patents
Fine crystalline and amorphous coexisting gold alloy, plating film, plating solution, and plating method for said film Download PDFInfo
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- TWI476301B TWI476301B TW099104998A TW99104998A TWI476301B TW I476301 B TWI476301 B TW I476301B TW 099104998 A TW099104998 A TW 099104998A TW 99104998 A TW99104998 A TW 99104998A TW I476301 B TWI476301 B TW I476301B
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- plating film
- gold
- gold alloy
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- 238000007747 plating Methods 0.000 title claims description 117
- 229910001020 Au alloy Inorganic materials 0.000 title claims description 54
- 239000003353 gold alloy Substances 0.000 title claims description 54
- 238000000034 method Methods 0.000 title claims description 14
- 239000013078 crystal Substances 0.000 claims description 67
- 239000010931 gold Substances 0.000 claims description 41
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 34
- 238000002441 X-ray diffraction Methods 0.000 claims description 28
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 24
- 238000009713 electroplating Methods 0.000 claims description 20
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 15
- 239000000203 mixture Substances 0.000 claims description 12
- 239000002245 particle Substances 0.000 claims description 11
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 8
- 229910052799 carbon Inorganic materials 0.000 claims description 8
- 235000015165 citric acid Nutrition 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 8
- 150000003839 salts Chemical class 0.000 claims description 7
- 150000002815 nickel Chemical class 0.000 claims description 6
- WOFVPNPAVMKHCX-UHFFFAOYSA-N N#C[Au](C#N)C#N Chemical class N#C[Au](C#N)C#N WOFVPNPAVMKHCX-UHFFFAOYSA-N 0.000 claims description 5
- 239000007788 liquid Substances 0.000 claims description 5
- 238000002156 mixing Methods 0.000 claims description 5
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical group [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 4
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 4
- 235000011114 ammonium hydroxide Nutrition 0.000 claims description 4
- 239000003795 chemical substances by application Substances 0.000 claims description 4
- 239000003002 pH adjusting agent Substances 0.000 claims description 4
- SIOXPEMLGUPBBT-UHFFFAOYSA-N picolinic acid Chemical compound OC(=O)C1=CC=CC=N1 SIOXPEMLGUPBBT-UHFFFAOYSA-N 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 4
- 150000003863 ammonium salts Chemical class 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- BJEPYKJPYRNKOW-REOHCLBHSA-N (S)-malic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O BJEPYKJPYRNKOW-REOHCLBHSA-N 0.000 claims description 2
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 claims description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 2
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims description 2
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 claims description 2
- 239000002253 acid Substances 0.000 claims description 2
- BJEPYKJPYRNKOW-UHFFFAOYSA-N alpha-hydroxysuccinic acid Natural products OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 claims description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 2
- 235000011090 malic acid Nutrition 0.000 claims description 2
- 239000001630 malic acid Substances 0.000 claims description 2
- 229940081066 picolinic acid Drugs 0.000 claims description 2
- 229910052700 potassium Inorganic materials 0.000 claims description 2
- 239000011591 potassium Substances 0.000 claims description 2
- 229910052708 sodium Inorganic materials 0.000 claims description 2
- 239000011734 sodium Substances 0.000 claims description 2
- 235000002906 tartaric acid Nutrition 0.000 claims description 2
- 239000011975 tartaric acid Substances 0.000 claims description 2
- 150000001869 cobalt compounds Chemical class 0.000 claims 1
- 239000000138 intercalating agent Substances 0.000 claims 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 35
- 229910052737 gold Inorganic materials 0.000 description 35
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 20
- 238000004458 analytical method Methods 0.000 description 15
- 229910052759 nickel Inorganic materials 0.000 description 15
- 229910052751 metal Inorganic materials 0.000 description 14
- 230000001788 irregular Effects 0.000 description 11
- 239000002184 metal Substances 0.000 description 11
- 229910021529 ammonia Inorganic materials 0.000 description 10
- 239000000126 substance Substances 0.000 description 10
- 229910017052 cobalt Inorganic materials 0.000 description 9
- 239000010941 cobalt Substances 0.000 description 9
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 9
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- 150000001868 cobalt Chemical class 0.000 description 5
- 229910052755 nonmetal Inorganic materials 0.000 description 5
- -1 ammonium ions Chemical class 0.000 description 4
- 239000008139 complexing agent Substances 0.000 description 4
- 150000007524 organic acids Chemical class 0.000 description 4
- 229910052697 platinum Inorganic materials 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 150000007522 mineralic acids Chemical class 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 241000080590 Niso Species 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 238000007772 electroless plating Methods 0.000 description 2
- MXZVHYUSLJAVOE-UHFFFAOYSA-N gold(3+);tricyanide Chemical compound [Au+3].N#[C-].N#[C-].N#[C-] MXZVHYUSLJAVOE-UHFFFAOYSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000000097 high energy electron diffraction Methods 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- 229910017398 Au—Ni Inorganic materials 0.000 description 1
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- 229910001080 W alloy Inorganic materials 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- BFNBIHQBYMNNAN-UHFFFAOYSA-N ammonium sulfate Chemical compound N.N.OS(O)(=O)=O BFNBIHQBYMNNAN-UHFFFAOYSA-N 0.000 description 1
- 229910052921 ammonium sulfate Inorganic materials 0.000 description 1
- 235000011130 ammonium sulphate Nutrition 0.000 description 1
- 229910000808 amorphous metal alloy Inorganic materials 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- UFMZWBIQTDUYBN-UHFFFAOYSA-N cobalt dinitrate Chemical compound [Co+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O UFMZWBIQTDUYBN-UHFFFAOYSA-N 0.000 description 1
- 229910001981 cobalt nitrate Inorganic materials 0.000 description 1
- 229910000361 cobalt sulfate Inorganic materials 0.000 description 1
- 229940044175 cobalt sulfate Drugs 0.000 description 1
- KTVIXTQDYHMGHF-UHFFFAOYSA-L cobalt(2+) sulfate Chemical compound [Co+2].[O-]S([O-])(=O)=O KTVIXTQDYHMGHF-UHFFFAOYSA-L 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000007822 coupling agent Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001493 electron microscopy Methods 0.000 description 1
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 1
- MSNOMDLPLDYDME-UHFFFAOYSA-N gold nickel Chemical compound [Ni].[Au] MSNOMDLPLDYDME-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
- 239000011707 mineral Substances 0.000 description 1
- LGQLOGILCSXPEA-UHFFFAOYSA-L nickel sulfate Chemical compound [Ni+2].[O-]S([O-])(=O)=O LGQLOGILCSXPEA-UHFFFAOYSA-L 0.000 description 1
- 229910000363 nickel(II) sulfate Inorganic materials 0.000 description 1
- KBJMLQFLOWQJNF-UHFFFAOYSA-N nickel(ii) nitrate Chemical compound [Ni+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O KBJMLQFLOWQJNF-UHFFFAOYSA-N 0.000 description 1
- 238000010979 pH adjustment Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- NRTDAKURTMLAFN-UHFFFAOYSA-N potassium;gold(3+);tetracyanide Chemical compound [K+].[Au+3].N#[C-].N#[C-].N#[C-].N#[C-] NRTDAKURTMLAFN-UHFFFAOYSA-N 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- VMDSWYDTKFSTQH-UHFFFAOYSA-N sodium;gold(1+);dicyanide Chemical compound [Na+].[Au+].N#[C-].N#[C-] VMDSWYDTKFSTQH-UHFFFAOYSA-N 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- YWYZEGXAUVWDED-UHFFFAOYSA-N triammonium citrate Chemical compound [NH4+].[NH4+].[NH4+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O YWYZEGXAUVWDED-UHFFFAOYSA-N 0.000 description 1
- 239000001393 triammonium citrate Substances 0.000 description 1
- 235000011046 triammonium citrate Nutrition 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/56—Electroplating: Baths therefor from solutions of alloys
- C25D3/62—Electroplating: Baths therefor from solutions of alloys containing more than 50% by weight of gold
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/60—Electroplating characterised by the structure or texture of the layers
- C25D5/615—Microstructure of the layers, e.g. mixed structure
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Electroplating And Plating Baths Therefor (AREA)
- Electroplating Methods And Accessories (AREA)
Description
本發明係關於一種有效用來做為電子機器零件的端子之鍍敷膜、一種電氣特性及機械特性均優異之微細結晶-非定形混雜金合金鍍敷膜、一種能夠形成該微細結晶-非定形混雜金合金鍍敷膜之電性鍍敷液、一種使用該電性鍍敷液之電氣鍍敷方法。The present invention relates to a plating film which is effective as a terminal for an electronic machine part, a fine crystal-unshaped hybrid gold alloy plating film excellent in electrical properties and mechanical properties, and a method capable of forming the fine crystal-deformed An electroplating solution of a mixed gold alloy plating film, and an electroplating method using the electroplating liquid.
在電氣/電子零件的連接器、電氣機械式小型繼電器、印刷配線板等方面,特別是就做為要求高信頼性的部位之電氣接點材料而論,現在一直廣泛地使用一種被稱為硬質金鍍敷膜的金鍍敷膜。硬質金鍍敷膜是一種在金中添加鈷、鎳等而成、既不會降低金本來的良好導電性及化學安定性、且可提昇膜的硬度之物。此種硬質金鍍敷膜是一種具有由金的微細結晶(20~30nm)聚集而成的微細構造,可視為是一種由於此種微細構造而能得到用以獲得接點材料所要求的耐磨耗性所需之最低限的硬度(努普硬度(Knoop hardness):Hk 170左右)之物質。In electrical/electronic parts connectors, electromechanical small relays, printed wiring boards, etc., especially as electrical contact materials for parts requiring high reliability, a type of hard material has been widely used. A gold plated film of gold plated film. The hard gold plating film is a material obtained by adding cobalt, nickel, or the like to gold, which does not lower the good electrical conductivity and chemical stability of gold, and can increase the hardness of the film. Such a hard gold plating film is a fine structure having a fine crystal of gold (20 to 30 nm), which can be regarded as a kind of wear resistance required for obtaining a contact material due to such a fine structure. The minimum hardness required for the consumption (Knoop hardness: Hk 170 or so).
另一方面,近年來雖然隨著電子零件之小型化,電氣接點的尺寸亦隨之微小化了,然而在被形成於此種微小接點中的鍍敷膜亦小尺寸化、薄膜化,因而也要求將硬度更進一步地向上提昇以得到高的磨耗性。On the other hand, in recent years, the size of electrical contacts has been miniaturized with the miniaturization of electronic components. However, the plating film formed in such minute contacts has been reduced in size and thinned. Therefore, it is also required to further increase the hardness upward to obtain high wearability.
又,在不久的將來,接點的尺寸想必是會近似於上述之硬質金鍍敷膜的微細結晶尺寸;在像這樣的微細接點上形成如上述之硬質金鍍敷膜的情況下,由於構成膜的微細結晶的絶對數量變少,料想就得不到和形成於現在適用程度大小的接點上之硬質金鍍敷膜的情況下同等的耐久性。所以,本發明人等乃發明以不具有微細結晶之均質非定形相所形成的非定形金合金鍍敷膜(例如,專利文獻6~8)。然而,就所謂得到既能將金本來的良好比電阻及化學安定性維持在實用上沒有問題的程度並同時提昇硬度之目的而論,可以說是尚有改善的餘地。Further, in the near future, the size of the contact is necessarily similar to the fine crystal size of the hard gold plating film described above, and when the hard gold plating film as described above is formed on such a fine contact, The absolute number of fine crystals constituting the film is small, and it is expected that durability equivalent to that of the hard gold plating film formed on the joint of the currently applicable size is not obtained. Therefore, the inventors of the present invention have invented an amorphous gold alloy plating film formed by a homogeneous amorphous phase having no fine crystals (for example, Patent Documents 6 to 8). However, it can be said that there is still room for improvement in order to maintain the good specific resistance and chemical stability of gold to the extent that it is practically problem-free and at the same time to increase the hardness.
[先前技術文獻][Previous Technical Literature]
[專利文獻][Patent Literature]
另外,本發明之相關先前技術文獻資訊係如以下所述。Further, the related prior art document information of the present invention is as follows.
[專利文獻1]特開昭60-33382號公報[Patent Document 1] JP-A-60-33382
[專利文獻2]特開昭62-290893號公報[Patent Document 2] JP-A-62-290893
[專利文獻3]專利第3452724號公報[Patent Document 3] Patent No. 3452724
[專利文獻4]專利第3983207號公報[Patent Document 4] Patent No. 3983207
[專利文獻5]特開2004-300483號公報[Patent Document 5] JP-A-2004-300483
[專利文獻6]特開2006-241594號公報[Patent Document 6] JP-A-2006-241594
[專利文獻7]特開2007-92157號公報[Patent Document 7] JP-A-2007-92157
[專利文獻8]特開2007-169706號公報[Patent Document 8] JP-A-2007-169706
[非專利文獻][Non-patent literature]
[非專利文獻1]川合慧,「金-鎳合金鍍敷析出構造之研究」,金屬表面技術,1968年,第19冊,第12卷,第487-491頁[Non-Patent Document 1] Chuan Hehui, "Study on the Precipitation Structure of Gold-Nickel Alloy Plating", Metal Surface Technology, 1968, Vol. 19, Vol. 12, pp. 487-491
[非專利文獻2]清水保雄及另1名,「關於電析Au-Ni合金之微細構造與相的電子顯微鏡之研究」,金屬表面技術,1976年,第27冊,第1卷,第20-24頁[Non-Patent Document 2] Shimizu Kazuo and the other, "Study on Electron Microscopy of Electrodeposited Au-Ni Alloys and Microstructures", Metal Surface Technology, 1976, Vol. 27, Vol. 1, No. 20 -24 pages
[非專利文獻3]渡邊徹著,「精密電鍍 鍍敷膜構造之控制技術及其解析法」,技術情報協會,2002年2月,第256-262頁[Non-Patent Document 3] Watanabe Thorough, "Control Technology and Analytical Method for Precision Electroplating Coating Structure", Technical Information Society, February 2002, pp. 256-262
[非專利文獻4]小見崇及另2名,「Ni-W合金鍍敷皮膜之高W含有率化與皮膜特性」,金屬表面技術,1988年,第39冊,第12卷,第809-812頁[Non-Patent Document 4] Xiao seeong and two others, "High W content and film properties of Ni-W alloy plating film", Metal Surface Technology, 1988, Vol. 39, Vol. 12, No. 809 -812 pages
[非專利文獻5]渡邊徹,「鍍敷法形成非晶質合金的機構」,表面技術,1989年,第40冊,第3卷,第21-26頁[Non-Patent Document 5] Watanabe Toru, "Mechanism for Forming Amorphous Alloy by Plating", Surface Technology, 1989, Vol. 40, Vol. 3, pp. 21-26
本發明係鑑於上述情事而成者,目的在於:提供一種既具有良好的導電性及化學安定性並同時提高硬度之耐磨耗性優異的微細結晶-非定形混雜金合金鍍敷膜、一種能夠形成該微細結晶-非定形混雜金合金鍍敷膜之電性鍍敷液、及一種使用該電性鍍敷液之電氣鍍敷方法。The present invention has been made in view of the above circumstances, and an object thereof is to provide a fine crystal-non-shaped hybrid gold alloy plating film which is excellent in abrasion resistance and excellent in electrical conductivity and chemical stability while improving hardness. An electroplating solution for forming the fine crystal-deformed mixed gold alloy plating film, and an electroplating method using the electroplating solution.
本發明人是在為了達成上記目的而重複地銳意檢討當中,基於預判:就即使是微小接點也不會降低硬度的鍍敷膜之微細構造而論,雖然結晶性構造相比之下,非定形相構造方面是既可以將金本來的良好比電阻及化學安定性維持在實用上沒有問題的程度並可以同時提昇硬度及耐磨耗性,然而電子的平均自由行程係短於結晶膜的緣故以致電氣傳導性低、又且由於內部應力導致在鍍敷膜上容易發生龜裂的想法而進行研究時,發現:藉由使用一種含有特定濃度的氰化金鹽、鎳鹽及/或鈷鹽、較佳者為更進一步地含有有機酸、無機酸或其鹽等之錯合劑及氨或銨離子之液安定性良好的電性鍍敷液來進行電性鍍敷,能得到令人驚奇的由微細結晶相和非定形相混雜而形成的微細結晶-非定形混雜金合金鍍敷膜、以及此種膜既可將金本來的良好比電阻值及化學安定性保持在實用上有用的程度並可同時提昇硬度,經更進一步地實施研究的結果而完成本發明。The present inventors have repeatedly made a careful review in order to achieve the above-mentioned purpose, and based on the preliminary judgment, the fine structure of the plating film which does not reduce the hardness even in the case of minute contacts, although the crystal structure is compared, In terms of the structure of the amorphous phase, it is possible to maintain the good specific resistance and chemical stability of gold to a practically no problem and to simultaneously improve hardness and wear resistance. However, the average free path of electrons is shorter than that of the crystalline film. When the study was conducted with the idea that the electrical conductivity was low and cracking easily occurred on the plating film due to internal stress, it was found that a specific concentration of gold cyanide salt, nickel salt and/or cobalt was used. It is surprising that the salt further preferably contains a compounding agent such as an organic acid, an inorganic acid or a salt thereof, and an electroplating solution having good liquid stability of ammonia or ammonium ions for electrical plating. A fine crystalline-unshaped hybrid gold alloy plating film formed by mixing a fine crystalline phase and an amorphous phase, and the film can maintain the good specific resistance value and chemical stability of gold. Practically useful and can also enhance the degree of hardness, the results of further research and completed embodiment of the present invention.
也就是說,本發明係提供:(1)一種以由微細結晶相和非定形相混雜形成做為特徴之微細結晶-非定形混雜金合金鍍敷膜、(2)一種含有以金基準計為0.0001~0.4 mol/dm3 的濃度之氰化金鹽、以鎳基準計為0.001~0.5 mol/dm3 的濃度之鎳鹽、及/或以鈷基準計為0.001~0.5 mol/dm3 的濃度之鈷鹽、較佳為更進一步地含有0.001~2.0 mol/dm3 的濃度之有機酸、無機酸或其鹽等之錯合劑、0.001~5.0 mol/dm3 的濃度之氨或銨離子做為特徴之液安定性良好的電性鍍敷液、以及(3)一種以使用該電性鍍敷液而在被鍍敷物上形成微細結晶-非定形混雜金合金鍍敷膜做為特徴之電氣鍍敷方法。That is, the present invention provides: (1) a fine crystal-non-shaped hybrid gold alloy plating film which is formed by mixing a fine crystal phase and an amorphous phase, and (2) one containing gold as a basis gold cyanide salt concentration of 0.0001 ~ 0.4 mol / dm 3, the nickel basis of 0.001 ~ 0.5 mol / dm 3 concentration of the nickel salt, and / or cobalt basis of 0.001 ~ 0.5 mol / concentration of DM 3 The cobalt salt, preferably further containing a concentration of 0.001 to 2.0 mol/dm 3 of an organic acid, a mineral acid or a salt thereof, or a mixture of ammonia or ammonium ions at a concentration of 0.001 to 5.0 mol/dm 3 An electroplating solution having a good liquid stability and (3) an electroplating which is characterized by the use of the electroless plating solution to form a fine crystal-deformed mixed gold alloy plating film on the object to be plated. Application method.
本發明之微細結晶-非定形混雜金合金鍍敷膜係由微細結晶相和非定形相混雜而形成,其結果為:由於它是一種既可將金本來的良好比電阻值及化學安定性保持在實用上有用的程度並可提昇硬度的物質,所以可有效地用來做為繼電器等之電氣/電子零件的接點材料。一般而言,已知道:在由微細結晶構成結晶膜之情況下,雖然當構成結晶粒的大小變小時,硬度會増大到某種限度(例如,在鎳的情況下:4 nm左右);然而,當結晶粒更進一步地縮小時,硬度就恐怕會下降。即使是在金的方面,雖然也是沒有能否適用一般理論的實測例子,然而,藉由在金之中首次實現微結晶-非定形混雜結晶膜的本發明,首次確認:微細結晶-非定形混雜金合金鍍敷膜可完全地解決像那樣的問題點,而且由於電氣傳導體也是高的、不容易發生龜裂的緣故,因而能夠充分地適合用來做為連接器或繼電器等之電氣/電子零件之微小接點材料。The fine crystal-unshaped hybrid gold alloy plating film of the present invention is formed by mixing a fine crystal phase and an amorphous phase, and as a result, it is a kind which can maintain the good specific resistance value and chemical stability of gold. A material that is practically useful and can increase hardness, so it can be effectively used as a contact material for electrical/electronic parts such as relays. In general, it is known that in the case where the crystal film is composed of fine crystals, although the size of the constituent crystal grains becomes small, the hardness is increased to a certain limit (for example, in the case of nickel: about 4 nm); When the crystal grains are further reduced, the hardness may be lowered. Even in the case of gold, although there is no practical example of whether or not the general theory can be applied, the present invention for the first time to realize a microcrystalline-unshaped hybrid crystal film in gold is confirmed for the first time: fine crystal-deformed hybrid The gold alloy plating film can completely solve such problems as described above, and since the electric conductor is also high and is unlikely to be cracked, it can be sufficiently suitable as an electric/electronic device such as a connector or a relay. The tiny contact material of the part.
以下,更進一步地針對本發明進行詳細的說明。Hereinafter, the present invention will be further described in detail.
本發明之微細結晶-非定形混雜金合金鍍敷膜係由微細結晶相和非定形相混雜所形成。The fine crystal-unshaped hybrid gold alloy plating film of the present invention is formed by mixing a fine crystal phase and an amorphous phase.
本發明之微細結晶-非定形混雜金合金鍍敷膜係在金中含有鎳及/或鈷之物,並且該微細構造係一種由微細結晶相和非定形相混雜而成的構造;藉由此等特徴而達成:比純非定形構造之非定形金合金鍍敷膜還要良好的比電阻值及化學安定性、以及更高的硬度。像這樣的由微細結晶相和非定形相混雜而成之構造係可以藉由X線繞射(XRD)圖、穿透式電子顯微鏡(TEM)照片及穿透式高能電子線繞射(THEED)照片來加以確認。The fine crystal-unshaped hybrid gold alloy plating film of the present invention contains nickel and/or cobalt in gold, and the fine structure is a structure in which a fine crystal phase and an amorphous phase are mixed; It is achieved by special features: better specific resistance and chemical stability, and higher hardness than amorphous non-formed gold alloy plating. Such a structure in which a fine crystal phase and an amorphous phase are mixed may be formed by an X-ray diffraction (XRD) pattern, a transmission electron microscope (TEM) photograph, and a transmissive high-energy electron diffraction (THEED). Photo to confirm.
本發明之微細結晶-非定形混雜金合金鍍敷膜,從維持高硬度的觀點來看,其微細結晶之平均粒徑宜是30 nm以下,尤其,較佳為20 nm以下,更佳為15 nm以下。The fine crystal-unshaped hybrid gold alloy plating film of the present invention preferably has an average particle diameter of fine crystals of 30 nm or less, particularly preferably 20 nm or less, more preferably 15 from the viewpoint of maintaining high hardness. Below nm.
又,本發明之微細結晶-非定形混雜金合金鍍敷膜,從維持金本來之特性(良好的比電阻值及化學安定性)或維持習用的金或金合金鍍敷膜上所沒有的高硬度之觀點來看,其微細結晶的體積分率宜是10~90%、特佳為15~60%。Further, the fine crystal-unshaped hybrid gold alloy plating film of the present invention has high properties from the maintenance of the original properties of gold (good specific resistance and chemical stability) or maintenance of conventional gold or gold alloy plating films. From the viewpoint of hardness, the volume fraction of fine crystals is preferably from 10 to 90%, particularly preferably from 15 to 60%.
若依照本發明的話,就能夠得到一種具有優異的硬度和比電阻之微細結晶-非定形混雜金合金鍍敷膜,即能夠得到一種具有:努普硬度宜是Hk 180以上;尤其,較佳為Hk 220以上,更佳為Hk 300以上,特佳為Hk 350以上;又,比電阻宜是200μΩ‧cm以下,特佳為150μΩ‧cm以下,尤佳為100μΩ‧cm以下之膜。又,本發明之微細結晶-非定形混雜金合金鍍敷膜是一種在300℃以下之退火處理(保持1小時)時不會改變微細結晶相和非定形相混雜而成的構造(即,引起結晶化而増大微細結晶的平均粒徑及體積分率)。According to the present invention, it is possible to obtain a fine crystalline-unshaped hybrid gold alloy plating film having excellent hardness and specific resistance, that is, it is possible to obtain a method having a Knoop hardness of preferably Hk 180 or more; in particular, preferably Hk 220 or more, more preferably Hk 300 or more, particularly preferably Hk 350 or more; further, the specific resistance is preferably 200 μΩ ‧ cm or less, particularly preferably 150 μΩ ‧ cm or less, and particularly preferably 100 μΩ ‧ cm or less. Further, the fine crystal-unshaped hybrid gold alloy plating film of the present invention is a structure in which the fine crystal phase and the amorphous phase are not mixed when the annealing treatment (holding for 1 hour) is performed at 300 ° C or lower (ie, causes The average particle diameter and volume fraction of the fine crystals which are crystallized and enlarged.
本發明之微細結晶-非定形混雜金合金鍍敷膜,因為它的比電阻值及化學安定性是優異的、並且具有習用的金或金合金鍍敷膜所未有的高硬度之特徴的緣故,所以可有效地用來做為電磁開關器、剎車器、恆溫器、繼電器、計時器、各種開關、印刷配線基板等之電氣/電子零件的端子等之導通接點。The fine crystal-unshaped hybrid gold alloy plating film of the present invention is excellent in specific resistance value and chemical stability, and has the characteristics of high hardness which is not possessed by conventional gold or gold alloy plating films. Therefore, it can be effectively used as a conduction contact for terminals of electrical/electronic parts such as electromagnetic switches, brakes, thermostats, relays, timers, various switches, printed wiring boards, and the like.
本發明之微細結晶-非定形混雜金合金鍍敷膜係能夠以組成式:Au100-x-y Mx Cy (但,Au或M為主成分,可以含有不可避免的不純物;M係Ni及/或Co;C為碳;1原子%≦X≦80原子%;1原子%≦y≦30原子%)來表示。The fine crystal-unshaped hybrid gold alloy plating film of the present invention can have a composition formula: Au 100-xy M x C y (however, Au or M is a main component, and may contain unavoidable impurities; M system Ni and / Or Co; C is carbon; 1 atom% ≦X≦80 atom%; 1 atom% ≦y≦30 atom%).
本發明之微細結晶-非定形混雜金合金鍍敷膜係能夠藉由使用含有氰化金鹽、鎳鹽及/或鈷鹽的電性鍍敷液之電性鍍敷來形成。The fine crystal-unshaped hybrid gold alloy plating film of the present invention can be formed by electrical plating using an electrical plating solution containing a gold cyanide salt, a nickel salt and/or a cobalt salt.
在該電性鍍敷液中,雖然是含有氰化金鹽、鎳鹽及/或鈷鹽,但舉例來說,例如,氰化金鹽的具體例可以是氰化金鉀、氰化金鈉、氰化金鋰等;鎳鹽的具體例,舉例來說,例如它可以是硫酸鎳、硝酸鎳等,鈷鹽的具體例,舉例來說,例如它可以是硫酸鈷、硝酸鈷等。鍍敷液中之氰化金鹽濃度,以金為基準計,宜是0.0001~0.4 mol/dm3 、較佳為0.001~0.2 mol/dm3 、更佳為0.01~0.1 mol/dm3 ;鎳鹽濃度,以鎳為基準計,宜是0.001~0.5 mol/dm3 、較佳為0.01~0.2 mol/dm3 ;鈷鹽濃度,以鈷為基準計,宜是0.001~0.5 mol/dm3 、較佳為0.01~0.2 mol/dm3 。鍍敷液中的金和鎳及/或鈷之比率((Ni+Co)/Au),以莫耳比計,較佳為0.01~300、更佳為1~30之範圍。In the electric plating solution, although it contains a gold cyanide salt, a nickel salt, and/or a cobalt salt, for example, a specific example of the cyanide gold salt may be gold potassium cyanide or sodium gold cyanide. Specific examples of the nickel salt, for example, nickel sulfate, nickel nitrate, etc., and specific examples of the cobalt salt, for example, it may be cobalt sulfate, cobalt nitrate or the like. The concentration of the cyanide gold salt in the plating solution is preferably 0.0001 to 0.4 mol/dm 3 , preferably 0.001 to 0.2 mol/dm 3 , more preferably 0.01 to 0.1 mol/dm 3 , based on gold. The salt concentration, based on nickel, is preferably 0.001 to 0.5 mol/dm 3 , preferably 0.01 to 0.2 mol/dm 3 ; and the cobalt salt concentration is preferably 0.001 to 0.5 mol/dm 3 based on cobalt. It is preferably 0.01 to 0.2 mol/dm 3 . The ratio of gold to nickel and/or cobalt in the plating solution ((Ni + Co) / Au) is preferably in the range of 0.01 to 300, more preferably 1 to 30, in terms of molar ratio.
又,該電性鍍敷液,較佳為更進一步地含有錯合劑。用來做為該錯合劑者,舉例來說,例如,它可以是具有錯合作用及pH緩衝作用之有機酸、無機酸或其鹽;用來做為有機酸、無機酸及其鹽者,舉例來說,例如其可以是檸檬酸、酒石酸、蘋果酸、吡啶甲酸、磷酸、胺磺酸及彼等之鈉鹽、鉀鹽、銨鹽等。鍍敷液中的錯合劑之濃度,較佳為0.001~2.0 mol/dm3 ;尤其,特佳為0.01~1.0 mol/dm3 ,尤佳為0.1~0.3 mol/dm3 。鍍敷液中之錯合劑和鎳及/或鈷的比率(錯合劑/(Ni+Co)],以莫耳比計,較佳為0.01~100,更佳為1~4之範圍。Moreover, it is preferable that the electrical plating solution further contains a coupling agent. As the reagent for the wrong agent, for example, it may be an organic acid having an wrong cooperation and pH buffering function, an inorganic acid or a salt thereof; and used as an organic acid, an inorganic acid or a salt thereof, For example, it may be citric acid, tartaric acid, malic acid, picolinic acid, phosphoric acid, amine sulfonic acid, and the sodium, potassium, ammonium salts thereof and the like. The concentration of the complexing agent in the plating solution is preferably 0.001 to 2.0 mol/dm 3 ; particularly preferably 0.01 to 1.0 mol/dm 3 , particularly preferably 0.1 to 0.3 mol/dm 3 . The ratio of the complexing agent to the nickel and/or cobalt in the plating solution (the complexing agent / (Ni + Co)) is preferably in the range of 0.01 to 100, more preferably 1 to 4 in terms of the molar ratio.
又,該電性鍍敷液較佳為更進一步地含有氨或銨離子。用來做氨或銨離子之具體例,舉例來說,例如,它可以是氨水、硫酸銨、錯合劑之銨鹽等。鍍敷液中的氨或銨離子之濃度宜是0.001~5.0 mol/dm3 ,特佳為0.01~2.0 mol/dm3 。該氨係與所謂之結晶相的平均粒徑、微細結晶(或非定形)的體積分率之鍍敷膜的結晶狀態、鍍敷浴之安定性大有關連。Further, the electrical plating solution preferably further contains ammonia or ammonium ions. Specific examples of the ammonia or ammonium ion used may be, for example, ammonia water, ammonium sulfate, an ammonium salt of a complexing agent, or the like. The concentration of ammonia or ammonium ions in the plating solution is preferably 0.001 to 5.0 mol/dm 3 , particularly preferably 0.01 to 2.0 mol/dm 3 . This ammonia system is associated with the average particle diameter of the so-called crystal phase, the crystal state of the plating film of the fine crystal (or amorphous) volume fraction, and the stability of the plating bath.
另外,該電性鍍敷液之pH宜是3~11;尤其,較佳為pH 5~9,尤佳為pH 6左右。pH調整係能夠以使用氨水、氫氧化鉀等之習用公知的pH調整劑來進行。Further, the pH of the electroplating solution is preferably from 3 to 11; in particular, it is preferably pH 5 to 9, more preferably about pH 6. The pH adjustment system can be carried out by using a conventionally known pH adjuster such as ammonia water or potassium hydroxide.
更且,在該電性鍍敷液之中,只要是不會對鍍敷膜之膜物性(微細結晶的體積分率及平均粒徑、XRD曲線圖的峰半值幅度、努普硬度、比電阻)及膜組成產生大的影響,可以視需要地含有以提昇光澤性、防止凹陷、賦予導電性、提供緩衝性、擴大能使用的電流密度範圍、促進析出速度、提高耐熱性、改善潤溼性等做為目的之界面活性劑、溶劑等各種的添加劑(例如,參照特開平7-11476號公報、特開2004-76026號公報、特開2006-37164號公報)。Further, among the electroplating solutions, the physical properties of the coating film (the volume fraction and the average particle diameter of the fine crystal, the peak value of the peak value of the XRD pattern, the Knoop hardness, and the ratio) are not provided. The resistance) and the film composition have a large influence, and may be optionally contained to enhance gloss, prevent dishing, impart conductivity, provide cushioning properties, expand the range of current density that can be used, promote deposition speed, improve heat resistance, and improve wetting. Various additives such as a surfactant and a solvent are used for the purpose of the present invention (for example, Japanese Laid-Open Patent Publication No. Hei 7-11476, JP-A-2004-76026, JP-A-2006-37164).
電氣鍍敷條件雖然是沒有特別的限定,然而鍍敷溫度宜為20~95℃、尤其50~90℃特別合適。陰極電流密度也隨著鍍敷液的組成而變化,雖然沒有特別的限定,然而在低電流密度域(例如,1 mA/cm2 以上至小於10 mA/cm2 )及高電流密度域(例如,超過10 mA/cm2 至200 mA/cm2 以下)處之兩者均能夠得到微細結晶-非定形混雜金合金鍍敷膜。又,在陽極上可以使用白金等之不溶性陽極。又,也可以使用鎳及/或鈷來做為陽極。另一方面,做為被鍍敷物者,舉例來說,例如,它可以是在電氣配線等上所使用的銅、鎳等之金屬材料。此種金屬材料也可以是形成於金屬基材或非金屬基材上而做為基底層的物質。另外,雖然不論有無攪拌均可,然而較佳為在攪拌下進行鍍敷;又,也可以利用脈衝電流來施加電流。Although the electroplating conditions are not particularly limited, the plating temperature is preferably 20 to 95 ° C, particularly 50 to 90 ° C. The cathode current density also varies depending on the composition of the plating solution, although not particularly limited, but in a low current density domain (for example, 1 mA/cm 2 or more to less than 10 mA/cm 2 ) and a high current density domain (for example) Both of them, more than 10 mA/cm 2 to 200 mA/cm 2 or less, can obtain a fine crystal-deformed mixed gold alloy plating film. Further, an insoluble anode such as platinum may be used on the anode. Further, nickel and/or cobalt may also be used as the anode. On the other hand, as the object to be plated, for example, it may be a metal material such as copper or nickel used for electric wiring or the like. Such a metal material may also be a substance formed on a metal substrate or a non-metal substrate as a base layer. Further, although it may be stirred or not, it is preferable to perform plating under stirring; or, a pulse current may be used to apply a current.
以下,雖然例示實施例及比較例來具體地說明本發明,然而本發明卻未受限下述之實施例而已。另外,在實施例之中,各分析、測定的方法及條件如以下所述。Hereinafter, the present invention will be specifically described by way of examples and comparative examples, but the present invention is not limited to the following examples. Further, in the examples, the methods and conditions for each analysis and measurement are as follows.
[結晶性、結晶粒徑][Crystallinity, crystal grain size]
利用理學電機公司製RINT2100-Ultima+:XRD法CuKα(40 kV/4OmA)RINT2100-Ultima+: XRD method CuKα (40 kV/4OmA) manufactured by Rigaku Motor Co., Ltd.
或利用日立高科技公司製HF-2200:TEM及THEED法,加速電壓200V明視野像Or use the HF-2200: TEM and THEED method made by Hitachi High-Tech Co., Ltd. to accelerate the 200V bright field image
[體積分率][Volume fraction]
利用日立高科技公司製HF-2200:TEM法及THEED法,加速電壓200V明視野像Acceleration voltage 200V bright field image using HF-2200: TEM method and THEED method manufactured by Hitachi High-Tech Co., Ltd.
[金屬組成][Metal composition]
利用SII科技公司製SEA5100:EDXRF法Using the SEA5100: EDXRF method of SII Technology
[非金屬元素測定][Measurement of non-metallic elements]
利用堀場製作所公司製EMIA-920V、美國LECO公司製TC-436EMI-920V manufactured by Horiba, Ltd., TC-436 manufactured by LECO, USA
[努普硬度][Nup hardness]
以JIS Z 2251為基準,測定:荷重5gf荷重保持時間30秒,對被形成於銅板上的30μm厚之鍍敷膜進行測定Based on JIS Z 2251, it was measured that the load of 5 gf was held for 30 seconds, and the 30 μm thick plating film formed on the copper plate was measured.
[比電阻][specific resistance]
利用共和理研公司製K-705RS:以JIS K 7194為基準測定(四探針法)K-705RS manufactured by Kyowa Riken Co., Ltd.: based on JIS K 7194 (four-probe method)
[實施例1][Example 1]
使用含有KAu(CN)2 0.035 mol/dm3 、NiSO4 ‧6H2 O 0.076 mol/dm3 、檸檬酸三銨0.21 mol/dm3 、經以KOH及硫酸將pH調整成6的電性鍍敷液,於溫度70℃、以電流密度10mA/cm2 在純度為99.96%之銅板上形成微細結晶-非定形混雜金合金鍍敷膜(膜厚1μm)。另外,在陽極上係使用白金被覆鈦電極(網狀);對於鍍敷中的鍍敷浴進行激烈的攪拌。Electrical plating using KAu(CN) 2 0.035 mol/dm 3 , NiSO 4 ‧6H 2 O 0.076 mol/dm 3 , triammonium citrate 0.21 mol/dm 3 , pH adjusted to 6 with KOH and sulfuric acid The liquid was subjected to a fine crystal-deformed mixed gold alloy plating film (film thickness: 1 μm) on a copper plate having a purity of 99.96% at a current density of 10 mA/cm 2 at a temperature of 70 °C. Further, a titanium electrode (mesh) was coated on the anode with platinum; and the plating bath in the plating was vigorously stirred.
藉由XRD、TEM及THE ED分析所得到的微細結晶-非定形混雜金合金鍍敷膜。將XRD曲線圖示於第1圖中,將TEM照片及THEED圖示於第2~4圖中。可確認:在XRD曲線之2θ=40度附近具有微細結晶或非定形特有的峰半值幅度1度以上之寬廣峰。又,在TEM照片中可觀察到:結晶特有的結晶紋和非定形特有的不規則構造之混雜的樣子。再者,在THEED圖上可觀察到:結晶特有的繞射斑點和非定形特有的中空環之混雜的樣子。由此結果,可知:所得到的鍍敷膜係具有微細結晶-非定形混雜構造。又,觀察TEM照片的結果,可知:微細結晶的平均粒徑為10 nm,而微細結晶相的體積分率為50%。另一方面,對所得到的微細結晶-非定形混雜金合金鍍敷膜進行組成分析、努普硬度及比電阻之測定。被檢測出的含有率:金屬元素部分是金為41.2原子%、鎳為46.0原子%;非金屬元素部分:碳為13.8原子%。努普硬度為Hk 347;比電阻為89μΩ‧cm。A fine crystalline-unshaped hybrid gold alloy plating film obtained by XRD, TEM, and THE ED analysis. The XRD curve is shown in Fig. 1, and the TEM photograph and the THEED graph are shown in Figs. 2 to 4. It was confirmed that there is a broad peak having a peak crystal half-value width of 1 degree or more peculiar to fine crystal or amorphous in the vicinity of 2θ=40 degrees of the XRD curve. Further, in the TEM photograph, it was observed that the crystal grains characteristic of the crystal and the irregular structure unique to the irregular shape were mixed. Further, on the THEED map, it is observed that the diffraction spots unique to the crystal and the hollow rings unique to the amorphous shape are mixed. From this result, it was found that the obtained plating film had a fine crystal-unshaped hybrid structure. Further, as a result of observing the TEM photograph, it was found that the average particle diameter of the fine crystal was 10 nm, and the volume fraction of the fine crystal phase was 50%. On the other hand, composition analysis, Knoop hardness, and specific resistance of the obtained fine crystal-unshaped mixed gold alloy plating film were measured. The detected content ratio: the metal element portion was 41.2 atom% of gold, the nickel was 46.0 atom%, and the non-metal element portion: carbon was 13.8 atom%. The Knoop hardness is Hk 347; the specific resistance is 89 μΩ ‧ cm.
[實施例2][Embodiment 2]
除了添加n-丙醇20voL%以外,以和實施例1同樣地進行鍍敷,對於所得到的鍍敷膜進行X RD、TEM及THEED分析。將XRD曲線圖示於第1圖中,將TEM照片及THEED圖示於第5~7圖中。可確認:在XRD曲線之2θ=40度附近具有微細結晶或非定形特有的峰半值幅度1度以上之寬廣峰。又,在TEM照片中可觀察到:結晶特有的結晶紋和非定形特有的不規則構造之混雜的樣子。再者,在THEED圖上可觀察到:結晶特有的繞射斑點和非定形特有的中空環之混雜的樣子。由此結果,可知:所得到的鍍敷膜係具有微細結晶-非定形混雜構造。又,觀察TEM照片的結果,可知:微細結晶的平均粒徑為10 nm,而微細結晶相的體積分率為50%。另一方面,對所得到的微細結晶-非定形混雜金合金鍍敷膜進行組成分析、努普硬度及比電阻之測定。被檢測出的含有率:金屬元素部分是金為48.1原子%、鎳為38.1原子%。非金屬元素部分:碳為12.8原子%。努普硬度為Hk 348;比電阻為89μΩ‧cm。The plating was performed in the same manner as in Example 1 except that 20 voL of n-propanol was added, and XRD, TEM, and THEED analysis were performed on the obtained plating film. The XRD curve is shown in Fig. 1, and the TEM photograph and the THEED graph are shown in Figs. 5-7. It was confirmed that there is a broad peak having a peak crystal half-value width of 1 degree or more peculiar to fine crystal or amorphous in the vicinity of 2θ=40 degrees of the XRD curve. Further, in the TEM photograph, it was observed that the crystal grains characteristic of the crystal and the irregular structure unique to the irregular shape were mixed. Further, on the THEED chart, it is observed that the diffraction spots unique to the crystal and the hollow rings unique to the amorphous shape are mixed. From this result, it was found that the obtained plating film had a fine crystal-unshaped hybrid structure. Further, as a result of observing the TEM photograph, it was found that the average particle diameter of the fine crystal was 10 nm, and the volume fraction of the fine crystal phase was 50%. On the other hand, composition analysis, Knoop hardness, and specific resistance of the obtained fine crystal-unshaped mixed gold alloy plating film were measured. The detected content ratio: the metal element portion was 48.1 atom% for gold and 38.1 atom% for nickel. Non-metallic element portion: carbon is 12.8 atom%. The Knoop hardness is Hk 348; the specific resistance is 89 μΩ‧cm.
[實施例3][Example 3]
除了檸檬酸濃度設為0.143 mol/dm3 、氨濃度設為1.2 mol/dm3 、電流密度1 mA/cm2 (通電時間50秒)和10 mA/cm2 (通電時間5秒)毫髮不差地交互進行電解鍍敷以外,和實施例1同樣地進行鍍敷,對於所得到的鍍敷膜進行XRD、TEM及THEED分析。將XRD曲線圖示於第1圖中,將TEM照片及THEED圖示於第8~10圖中。可確認:在XRD曲線之2θ=40度附近具有微細結晶或非定形特有的峰半值幅度1度以上之寬廣峰。又,在TEM照片中可觀察到:結晶特有的結晶紋和非定形特有的不規則構造之混雜的樣子。再者,在THEED圖上可觀察到:結晶特有的繞射斑點和非定形特有的中空環之混雜的樣子。定電流鍍敷的情況下,電流密度1 mA/cm2 時只得到結晶相,而10 mA/cm2 時只得到非定形相。由此結果,可知:脈衝鍍敷所得到的鍍敷膜係具有微細結晶-非定形混雜構造。又,觀察TEM照片的結果,可知:微細結晶的平均粒徑為10 nm,而微細結晶相的體積分率為60%。另一方面,對所得到的鍍敷膜進行組成分析、努普硬度及比電阻之測定。被檢測出的含有率:金屬元素部分是金為47.4原子%、鎳為47.0原子%。非金屬元素部分:碳為5.6原子%。努普硬度為Hk 222;比電阻為57μΩ‧cm。Except that the citric acid concentration was set to 0.143 mol/dm 3 , the ammonia concentration was set to 1.2 mol/dm 3 , the current density was 1 mA/cm 2 (the energization time was 50 seconds), and the 10 mA/cm 2 (the energization time was 5 seconds). Electroplating was carried out in the same manner as in Example 1 except that electrolytic plating was alternately performed, and XRD, TEM, and THEED analysis were performed on the obtained plating film. The XRD curve is shown in Fig. 1, and the TEM photograph and the THEED graph are shown in Figs. 8-10. It was confirmed that there is a broad peak having a peak crystal half-value width of 1 degree or more peculiar to fine crystal or amorphous in the vicinity of 2θ=40 degrees of the XRD curve. Further, in the TEM photograph, it was observed that the crystal grains characteristic of the crystal and the irregular structure unique to the irregular shape were mixed. Further, on the THEED chart, it is observed that the diffraction spots unique to the crystal and the hollow rings unique to the amorphous shape are mixed. In the case of constant current plating, only a crystalline phase was obtained at a current density of 1 mA/cm 2 , and only an amorphous phase was obtained at 10 mA/cm 2 . From this result, it is understood that the plating film obtained by pulse plating has a fine crystal-unshaped hybrid structure. Further, as a result of observing the TEM photograph, it was found that the average particle diameter of the fine crystals was 10 nm, and the volume fraction of the fine crystal phase was 60%. On the other hand, the obtained plating film was subjected to composition analysis, Knoop hardness, and specific resistance measurement. The detected content ratio: the metal element portion was 47.4 atom% in gold and 47.0 atom% in nickel. Non-metallic element portion: carbon is 5.6 atom%. The Knoop hardness is Hk 222; the specific resistance is 57 μΩ ‧ cm.
[實施例4][Example 4]
除了檸檬酸濃度設定為0.143 mol/dm3 、氨濃度設定為1.2 mol/dm3 、電流密度設定為50 mA/cm2 以外,和實施例1同樣地進行鍍敷,將所得到的非定形金合金鍍敷膜於退火溫度(保溫溫度)400℃、昇溫速度10℃/分鐘、保溫1小時、大氣雰圍氣下進行退火處理,對所得到的鍍敷膜進行XRD、TEM及T HEED分析。將XRD曲線圖示於第1圖中,將TEM照片及THEED圖示於第11~13圖中。可確認:在XRD曲線之2θ=40度附近具有微細結晶或非定形特有的峰半值幅度1度以上之寬廣峰。又,在TEM照片中可觀察到:結晶特有的結晶紋和非定形特有的不規則構造之混雜的樣子。再者,在THEED圖上可觀察到:結晶特有的繞射斑點和非定形特有的中空環之混雜的樣子。由此結果,可知:所得到的鍍敷膜係具有微細結晶-非定形混雜構造。又,觀察TEM照片的結果,可知:微細結晶的平均粒徑為15 nm,而微細結晶相的體積分率為60%。Plating was carried out in the same manner as in Example 1 except that the citric acid concentration was set to 0.143 mol/dm 3 , the ammonia concentration was set to 1.2 mol/dm 3 , and the current density was set to 50 mA/cm 2 , and the obtained amorphous gold was obtained. The alloy plating film was annealed at an annealing temperature (heating temperature) of 400 ° C, a heating rate of 10 ° C / min, and kept for 1 hour under an atmospheric atmosphere, and the obtained plating film was subjected to XRD, TEM, and T HEED analysis. The XRD curve is shown in Fig. 1, and the TEM photograph and the THEED graph are shown in Figs. 11-13. It was confirmed that there is a broad peak having a peak crystal half-value width of 1 degree or more peculiar to fine crystal or amorphous in the vicinity of 2θ=40 degrees of the XRD curve. Further, in the TEM photograph, it was observed that the crystal grains characteristic of the crystal and the irregular structure unique to the irregular shape were mixed. Further, on the THEED map, it is observed that the diffraction spots unique to the crystal and the hollow rings unique to the amorphous shape are mixed. From this result, it was found that the obtained plating film had a fine crystal-unshaped hybrid structure. Further, as a result of observing the TEM photograph, it was found that the average particle diameter of the fine crystal was 15 nm, and the volume fraction of the fine crystal phase was 60%.
[實施例5][Example 5]
使用含有KAu(CN)2 0.035 mol/dm3 、CoSO4 ‧7H2 O 0.076 mol/dm3 、檸檬酸‧H2 O 0.1 mol/dm3 、氨濃度設為0.44 mol/dm3 並經以KOH及硫酸將pH調整成6的電性鍍敷液,於溫度70℃、以電流密度10mA/cm2 在純度為99.96%之銅板上形成微細結晶-非定形混雜金合金鍍敷膜(膜厚1μm)。另外,在陽極上係使用白金被覆鈦電極(網狀);對於鍍敷中的鍍敷浴進行激烈的攪拌。It contains KAu(CN) 2 0.035 mol/dm 3 , CoSO 4 ‧7H 2 O 0.076 mol/dm 3 , citric acid ‧H 2 O 0.1 mol/dm 3 , ammonia concentration 0.44 mol/dm 3 and KOH And an electroless plating solution adjusted to pH 6 by sulfuric acid, and a fine crystal-non-shaped mixed gold alloy plating film (film thickness 1 μm) was formed on a copper plate having a purity of 99.96% at a current density of 10 mA/cm 2 at a temperature of 70 ° C. ). Further, a titanium electrode (mesh) was coated on the anode with platinum; and the plating bath in the plating was vigorously stirred.
藉由XRD、TEM及THEED分析所得到的微細結晶-非定形混雜金合金鍍敷膜。將XRD曲線圖示於第1圖中,將TEM照片及THEED圖示於第14~16圖中。可確認:在XRD曲線之2θ=40度附近具有微細結晶或非定形特有的峰半值幅度1度以上之寬廣峰。又,在TEM照片中可觀察到:結晶特有的結晶紋和非定形特有的不規則構造之混雜的樣子。再者,在THEED圖上可觀察到:結晶特有的繞射斑點和非定形特有的中空環之混雜的樣子。由此結果,可知:所得到的鍍敷膜係具有微細結晶-非定形混雜構造。又,觀察TEM照片的結果,可知:微細結晶的平均粒徑為5 nm,而微細結晶相的體積分率為15%。另一方面,對所得到的微細結晶-非定形混雜金合金鍍敷膜進行組成分析、努普硬度之測定。被檢測出的含有率:金屬元素部分是金為36.4原子%、鈷為40.6原子%;非金屬元素部分:碳為23.0原子%。努普硬度為Hk 180。A fine crystalline-unshaped hybrid gold alloy plating film obtained by XRD, TEM, and THEED analysis. The XRD curve is shown in Fig. 1, and the TEM photograph and the THEED graph are shown in Figs. It was confirmed that there is a broad peak having a peak crystal half-value width of 1 degree or more peculiar to fine crystal or amorphous in the vicinity of 2θ=40 degrees of the XRD curve. Further, in the TEM photograph, it was observed that the crystal grains characteristic of the crystal and the irregular structure unique to the irregular shape were mixed. Further, on the THEED chart, it is observed that the diffraction spots unique to the crystal and the hollow rings unique to the amorphous shape are mixed. From this result, it was found that the obtained plating film had a fine crystal-unshaped hybrid structure. Further, as a result of observing the TEM photograph, it was found that the average particle diameter of the fine crystals was 5 nm, and the volume fraction of the fine crystal phase was 15%. On the other hand, the composition analysis and the Knoop hardness of the obtained fine crystal-unshaped mixed gold alloy plating film were measured. The detected content ratio: the metal element portion was 36.4 atom% of gold, the cobalt was 40.6 atom%, and the non-metal element portion: carbon was 23.0 atom%. The Knoop hardness is Hk 180.
[比較例1][Comparative Example 1]
除了檸檬酸濃度設定為0.143 mol/dm3 、氨濃度設定為0.46 mol/dm3 以外,和實施例1同樣地進行鍍敷,並對所得到的鍍敷膜進行XRD、TEM及THEED分析。將XRD曲線圖示於第1圖中,將TEM照片及THEED圖示於第17~18圖中。可確認:在XRD曲線之2θ=40度附近具有非定形特有的峰半值幅度1度以上之寬廣峰。又,在TEM照片中可以確認非定形特有的不規則構造,但不能確認出如結晶粒界及結晶紋之這樣規則的構造。再者,THEED圖中可以確認非定形特有的中空環。由此結果可知:所得到的鍍敷膜是不具有微細結晶的均質非定形構造。又,測定所得到的鍍敷膜的組成分析、努普硬度及比電阻。被檢測出的含有率:金屬元素部分是金為15.2原子%、鎳為67.5原子%;非金屬元素部分:碳為17.3原子%。努普硬度為Hk 435;比電阻為251μΩ‧cm。The plating was performed in the same manner as in Example 1 except that the citric acid concentration was set to 0.143 mol/dm 3 and the ammonia concentration was set to 0.46 mol/dm 3 , and the obtained plating film was subjected to XRD, TEM, and THEED analysis. The XRD curve is shown in Fig. 1, and the TEM photograph and the THEED graph are shown in Figs. 17-18. It was confirmed that there is a broad peak having a non-fixed peak half-value width of 1 degree or more in the vicinity of 2θ=40 degrees of the XRD curve. Further, in the TEM photograph, an irregular structure unique to the amorphous shape was confirmed, but a regular structure such as a crystal grain boundary and a crystal grain was not confirmed. Furthermore, the hollow ring unique to the amorphous shape can be confirmed in the THEED chart. From this result, it was found that the obtained plating film was a homogeneous amorphous structure having no fine crystals. Further, composition analysis, Knoop hardness and specific resistance of the obtained plating film were measured. The detected content ratio: the metal element portion was 15.2 atom% of gold, the nickel was 67.5 atom%, and the non-metal element portion: carbon was 17.3 atom%. The Knoop hardness is Hk 435; the specific resistance is 251 μΩ ‧ cm.
[比較例2][Comparative Example 2]
使用含有KAu(CN)2 0.04 mol/dm3 、NiSO4 ‧6H2 O 0.0085 mol/dm3 、檸檬酸‧H2 O 0.5 mol/dm3 、KOH 0.7 mol/dm3 並經以硫酸將pH調整成3.5的電性鍍敷液,於溫度30℃、以電流密度10 mA/cm2 在純度為99.96%之銅板上形成硬質金鍍敷膜(膜厚1μm)。另外,在陽極上係使用白金被覆鈦電極(網狀);對於鍍敷中的鍍敷浴進行緩慢的攪拌。Use KAu(CN) 2 0.04 mol/dm 3 , NiSO 4 ‧6H 2 O 0.0085 mol/dm 3 , citric acid ‧H 2 O 0.5 mol/dm 3 , KOH 0.7 mol/dm 3 and adjust the pH with sulfuric acid A 3.5% electrolytic plating solution was formed into a hard gold plating film (film thickness: 1 μm) on a copper plate having a purity of 99.96% at a current density of 10 mA/cm 2 at a temperature of 30 °C. Further, a titanium electrode (mesh) was coated on the anode with platinum, and the plating bath in the plating was slowly stirred.
藉由XRD、TEM及THEED分析所得到的硬質金鍍敷膜。將XRD曲線圖示於第1圖中。可確認:在XRD曲線之2θ=38度附近具有來自Au(111)之尖銳峰。又,從TEM照片及THEED圖亦可確認出結晶。由此結果,可知:所得到的鍍敷膜係不具有非定形相之多結晶構造。又,從XRD曲線圖計算出的結果,可知:結晶的平均粒徑為13 nm。另一方面,測定所得到的鍍敷膜之組成分析、努普硬度及比電阻。被檢測出的含有率:金屬元素部分是金為96.5原子%、鎳為0.77原子%;非金屬元素部分:碳為2.7原子%。努普硬度為Hk 160;比電阻為17μΩ‧cm。A hard gold plating film obtained by XRD, TEM, and THEED analysis. The XRD curve is shown in Figure 1. It was confirmed that there was a sharp peak derived from Au (111) in the vicinity of 2θ = 38 degrees of the XRD curve. Further, crystals were also confirmed from the TEM photograph and the THEED map. From this result, it was found that the obtained plating film was a polycrystalline structure having no amorphous phase. Further, from the results calculated from the XRD graph, it was found that the average particle diameter of the crystal was 13 nm. On the other hand, the composition analysis, the Knoop hardness and the specific resistance of the obtained plating film were measured. The detected content ratio: the metal element portion was 96.5 atom% of gold, the nickel was 0.77 atom%, and the non-metal element portion: carbon was 2.7 atom%. The Knoop hardness is Hk 160; the specific resistance is 17 μΩ‧cm.
另外,在第1圖所示的XRD曲線之2θ=50°附近所見到的尖銳峰係由基板之銅所引起的。Further, the sharp peak seen in the vicinity of 2θ = 50° of the XRD curve shown in Fig. 1 is caused by copper of the substrate.
又,相對於在金鍍敷膜中被認為高硬度的無添加硬金(AFHG)、鎳硬金(NiHG)、CoHG的努普硬度仍達不到Hk 200的程度而言,可知:實施例1之微細結晶-非定形混雜金合金鍍敷膜的努普硬度係具有相當於彼等的2~3倍高之硬度。Moreover, it is understood that the Knoop hardness of the non-added hard gold (AFHG), the nickel hard gold (NiHG), and the CoHG which are considered to have high hardness in the gold plating film is still less than Hk 200. The Knoop hardness of the fine crystal-unshaped hybrid gold alloy plating film of 1 has a hardness equivalent to 2 to 3 times higher than that of the Nup.
第1圖係顯示在實施例1、2、3、4、5所得到之微細結晶-非定形混雜金合金鍍敷膜及在比較例1、2所得到之金合金鍍敷膜的XRD曲線圖之圖。Fig. 1 is a view showing XRD patterns of the fine crystal-deformed mixed gold alloy plating film obtained in Examples 1, 2, 3, 4, and 5 and the gold alloy plating film obtained in Comparative Examples 1 and 2. Picture.
第2圖係顯示在實施例1所得到之微細結晶-非定形混雜金合金鍍敷膜的TEM照片(10萬倍)之圖。Fig. 2 is a view showing a TEM photograph (100,000 times) of the fine crystal-non-shaped mixed gold alloy plating film obtained in Example 1.
第3圖係顯示在實施例1所得到之微細結晶-非定形混雜金合金鍍敷膜的TEM照片(100萬倍)之圖。Fig. 3 is a view showing a TEM photograph (1 million times) of the fine crystal-deformed mixed gold alloy plating film obtained in Example 1.
第4圖係顯示在實施例1所得到之微細結晶-非定形混雜金合金鍍敷膜的THEED圖之圖。Fig. 4 is a view showing the THEED chart of the fine crystal-non-shaped mixed gold alloy plating film obtained in Example 1.
第5圖係顯示在實施例2所得到之微細結晶-非定形混雜金合金鍍敷膜的TEM照片(50萬倍)之圖。Fig. 5 is a view showing a TEM photograph (500,000 times) of the fine crystal-non-shaped mixed gold alloy plating film obtained in Example 2.
第6圖係顯示在實施例2所得到之微細結晶-非定形混雜金合金鍍敷膜的TEM照片(100萬倍)之圖。Fig. 6 is a view showing a TEM photograph (1 million times) of the fine crystal-non-shaped mixed gold alloy plating film obtained in Example 2.
第7圖係顯示在實施例2所得到之微細結晶-非定形混雜金合金鍍敷膜的THEED圖之圖。Fig. 7 is a view showing the THEED chart of the fine crystal-deformed mixed gold alloy plating film obtained in Example 2.
第8圖係顯示在實施例3所得到之微細結晶-非定形混雜金合金鍍敷膜的TEM照片(30萬倍)之圖。Fig. 8 is a view showing a TEM photograph (300,000 times) of the fine crystal-non-shaped mixed gold alloy plating film obtained in Example 3.
第9圖係顯示在實施例3所得到之微細結晶-非定形混雜金合金鍍敷膜的TEM照片(100萬倍)之圖。Fig. 9 is a view showing a TEM photograph (1 million times) of the fine crystal-deformed mixed gold alloy plating film obtained in Example 3.
第10圖係顯示在實施例3所得到之微細結晶-非定形混雜金合金鍍敷膜的THEED圖之圖。Fig. 10 is a view showing the THEED chart of the fine crystal-deformed mixed gold alloy plating film obtained in Example 3.
第11圖係顯示在實施例4所得到之微細結晶-非定形混雜金合金鍍敷膜的TEM照片(20萬倍)之圖。Fig. 11 is a view showing a TEM photograph (200,000 times) of the fine crystal-deformed mixed gold alloy plating film obtained in Example 4.
第12圖係顯示在實施例4所得到之微細結晶-非定形混雜金合金鍍敷膜的TEM照片(70萬倍)之圖。Fig. 12 is a view showing a TEM photograph (700,000 times) of the fine crystal-non-shaped mixed gold alloy plating film obtained in Example 4.
第13圖係顯示在實施例4所得到之微細結晶-非定形混雜金合金鍍敷膜的THEED圖之圖。Fig. 13 is a view showing the THEED chart of the fine crystal-deformed mixed gold alloy plating film obtained in Example 4.
第14圖係顯示在實施例5所得到之微細結晶-非定形混雜金合金鍍敷膜的TEM照片(40萬倍)之圖。Fig. 14 is a view showing a TEM photograph (400,000 times) of the fine crystal-deformed mixed gold alloy plating film obtained in Example 5.
第15圖係顯示在實施例5所得到之微細結晶-非定形混雜金合金鍍敷膜的TEM照片(100萬倍)之圖。Fig. 15 is a view showing a TEM photograph (1 million times) of the fine crystal-deformed mixed gold alloy plating film obtained in Example 5.
第16圖係顯示在實施例5所得到之微細結晶-非定形混雜金合金鍍敷膜的THEED圖之圖。Fig. 16 is a view showing the THEED chart of the fine crystal-deformed mixed gold alloy plating film obtained in Example 5.
第17圖係顯示在比較例1所得到之非定形金合金鍍敷膜的TEM照片(100萬倍)之圖。Fig. 17 is a view showing a TEM photograph (1 million times) of the amorphous gold alloy plating film obtained in Comparative Example 1.
第18圖係顯示在比較例1所得到之非定形金合金鍍敷膜的THEED圖之圖。Fig. 18 is a view showing the THEED chart of the amorphous gold alloy plating film obtained in Comparative Example 1.
Claims (13)
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| JP2009033632A JP5424666B2 (en) | 2009-02-17 | 2009-02-17 | Fine crystal-amorphous mixed gold alloy and plating film, and plating solution and plating film forming method therefor |
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| US (1) | US20120031764A1 (en) |
| JP (1) | JP5424666B2 (en) |
| KR (1) | KR20110132356A (en) |
| CN (1) | CN102317508A (en) |
| DE (1) | DE112010000791T5 (en) |
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| JP2012184468A (en) * | 2011-03-04 | 2012-09-27 | Waseda Univ | Plating film, electronic part, plating liquid, and method for forming plating film |
| JP5896508B2 (en) * | 2011-04-28 | 2016-03-30 | 学校法人早稲田大学 | Electroplating solution for production of plating film having composition and nickel carbide Ni3C as main phase |
| DE102017002472A1 (en) * | 2017-03-14 | 2018-09-20 | Diehl Metal Applications Gmbh | Connectors |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2000026989A (en) * | 1998-07-10 | 2000-01-25 | Nau Chemical:Kk | Production of gold-tin foil |
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| JPS6033382A (en) | 1983-08-03 | 1985-02-20 | Nippon Pureeteingu Kk | Electrodeposition of amorphous alloy by pulse electrolysis |
| JPS62290893A (en) | 1986-06-09 | 1987-12-17 | Nippon Mining Co Ltd | Gold-nickel alloy plating solution and plating method |
| JPH0711476A (en) | 1993-06-23 | 1995-01-13 | Kojima Kagaku Yakuhin Kk | Palladium plating solution |
| JP3989795B2 (en) | 2002-08-09 | 2007-10-10 | エヌ・イーケムキャット株式会社 | Electrolytic hard gold plating solution and plating method using the same |
| JP2004300483A (en) | 2003-03-28 | 2004-10-28 | Asahi Kasei Chemicals Corp | Materials consisting of crystalline and amorphous structures |
| JP4614052B2 (en) | 2004-07-27 | 2011-01-19 | 石原薬品株式会社 | Nickel barrel plating method |
| US20080260607A1 (en) * | 2004-11-05 | 2008-10-23 | Maria Flytzani-Stephanopoulos | Treatment of Gold-Ceria Catalysts with Oxygen to Improve Stability Thereof in the Water-Gas Shift and Selective Co Oxidation Reactions |
| JP4868123B2 (en) | 2005-02-04 | 2012-02-01 | 学校法人早稲田大学 | Gold-nickel amorphous alloy plating film, electroplating solution and electroplating method |
| JP4868116B2 (en) * | 2005-09-30 | 2012-02-01 | 学校法人早稲田大学 | Gold-cobalt amorphous alloy plating film, electroplating solution and electroplating method |
| JP4868121B2 (en) * | 2005-12-21 | 2012-02-01 | 学校法人早稲田大学 | Electroplating solution and method for forming amorphous gold-nickel alloy plating film |
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| JP2000026989A (en) * | 1998-07-10 | 2000-01-25 | Nau Chemical:Kk | Production of gold-tin foil |
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| JP5424666B2 (en) | 2014-02-26 |
| CN102317508A (en) | 2012-01-11 |
| WO2010095658A1 (en) | 2010-08-26 |
| US20120031764A1 (en) | 2012-02-09 |
| JP2010189685A (en) | 2010-09-02 |
| DE112010000791T5 (en) | 2012-07-26 |
| TW201111560A (en) | 2011-04-01 |
| KR20110132356A (en) | 2011-12-07 |
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