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TWI469839B - Ultrasonic vibration joint device - Google Patents

Ultrasonic vibration joint device Download PDF

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Publication number
TWI469839B
TWI469839B TW100120831A TW100120831A TWI469839B TW I469839 B TWI469839 B TW I469839B TW 100120831 A TW100120831 A TW 100120831A TW 100120831 A TW100120831 A TW 100120831A TW I469839 B TWI469839 B TW I469839B
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ultrasonic vibration
receiving portion
substrate
glass substrate
contact
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TW100120831A
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Chinese (zh)
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TW201228757A (en
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三浦秀樹
西中大之
吉田章男
米澤重之
小林宏
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東芝三菱電機產業系統股份有限公司
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/002Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating specially adapted for particular articles or work
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/10Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating making use of vibrations, e.g. ultrasonic welding

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)
  • Joining Of Glass To Other Materials (AREA)

Description

超音波振動接合裝置Ultrasonic vibration joint device

本發明係關於超音波振動接合裝置之發明,本發明之超音波振動接合裝置係可利用在例如對薄厚度之基板進行被處理體的超音波振動接合之時。The present invention relates to an ultrasonic vibration bonding apparatus, and the ultrasonic vibration bonding apparatus of the present invention can be utilized, for example, when ultrasonically vibrating bonding of a substrate to a thin substrate is performed.

就用以對基板進行接合導電性部件等被處理體之技術而言,有稱為超音波振動接合之技術(參照例如專利文獻1、2)。In the technique for bonding a substrate to a target object such as a conductive member, there is a technique called ultrasonic vibration bonding (see, for example, Patent Documents 1 and 2).

使在基板上配置被處理體,以預定之壓力將接合工具(tool)予以抵接在該被處理體上,並使該接合工具向水平方向超音波振動。藉此,被處理體就接合在基板上。The object to be processed is placed on the substrate, and a bonding tool is brought into contact with the object to be processed at a predetermined pressure, and the bonding tool is ultrasonically vibrated in the horizontal direction. Thereby, the object to be processed is bonded to the substrate.

在太陽電池之領域中,於形成在玻璃(glass)基板之電極層接合引線(lead)之際,例如可考慮利用該超音波振動接合處理。In the field of solar cells, when forming an electrode layer bonding lead on a glass substrate, for example, the ultrasonic vibration bonding process can be considered.

(先前技術文獻)(previous technical literature)

(專利文獻)(Patent Literature)

專利文獻1:日本特開2008-155240號公報。Patent Document 1: Japanese Laid-Open Patent Publication No. 2008-155240.

專利文獻2:日本特開H11-54678號公報。Patent Document 2: Japanese Laid-Open Patent Publication No. H11-54678.

然而,當對厚度為數毫米(mm)以下之基板,施予成膜處理及/或熱處理時,會有發生局部性或者擴及廣範圍之形變及/或翹曲。對於發生該形變等之基板,若施予超音波振動接合處理,則超音波振動就會不正常地被予以傳送,而發生接合不良。However, when a film forming process and/or a heat treatment is applied to a substrate having a thickness of several millimeters (mm) or less, localization or a wide range of deformation and/or warpage may occur. When the ultrasonic vibration bonding process is applied to the substrate on which the deformation or the like occurs, the ultrasonic vibration is abnormally transmitted, and the bonding failure occurs.

雖可考慮在超音波振動接合處理前,矯正基板之形變及/或翹曲。然而,為執行該矯正,必需有給予非常高之壓力於基板上,且例如於基板為屬於薄厚度之玻璃基板等之情形,會因該矯正導致基板受損傷。Although it is considered to correct the deformation and/or warpage of the substrate before the ultrasonic vibration bonding process. However, in order to perform the correction, it is necessary to give a very high pressure to the substrate, and for example, when the substrate is a glass substrate of a thin thickness or the like, the substrate may be damaged by the correction.

因此,本發明之目的係為提供一種超音波振動接合裝置,該超音波振動接合裝置係可在例如基板即使發生形變及/或翹曲,對於該基板也不會造成損壞(damage),可正常地進行被處理體在基板上之超音波振動接合。SUMMARY OF THE INVENTION Accordingly, it is an object of the present invention to provide an ultrasonic vibration bonding apparatus which can cause damage to a substrate even if deformation and/or warpage occurs, for example, on a substrate. Ultrasonic vibration bonding of the object to be processed on the substrate is performed.

為達成前述之目的,本發明之超音波接合裝置,係可進行被處理體對基板之超音波振動接合,其具備有:超音波振動部,係可將同時進行來自上方向之加壓的水平方向之超音波振動,予以施加在前述被處理體;承載台,用以載置前述基板;以及承受部,位在對應於前述超音波振動部之與前述被處理體之抵接部的位置,且可從下方向承接前述基板;前述超音波振動部係在藉由前述承受部承接前述基板之狀態,對前述被處理體進行前述超音波振動之施加。In order to achieve the above object, the ultrasonic bonding apparatus of the present invention can perform ultrasonic vibration bonding of a substrate to a substrate, and includes an ultrasonic vibration unit that can simultaneously perform pressure from the upper direction. Ultrasonic vibration in the direction is applied to the object to be processed; the stage is placed on the substrate; and the receiving portion is located at a position corresponding to the abutting portion of the ultrasonic vibrating portion and the object to be processed. The substrate is received from the lower side, and the ultrasonic vibration unit applies the ultrasonic vibration to the object to be processed in a state in which the substrate is received by the receiving portion.

本發明之超音波振動接合裝置係可進行被處理體對基板之超音波振動接合,其具備有:超音波振動部,係可將同時進行來自上方向之加壓的水平方向之超音波振動,予以施加在前述被處理體;承載台,用以載置前述基板;以及承受部,位在對應於前述超音波振動部之與前述被處理體之抵接部的位置,且可從下方向承接前述基板;前述超音波振動部係在藉由前述承受部承接前述基板之狀態,對前述被處理體進行前述超音波振動之施加。The ultrasonic vibration bonding device of the present invention is capable of ultrasonically vibrating the substrate to be processed by the object to be processed, and includes an ultrasonic vibration unit that can simultaneously perform ultrasonic vibration in the horizontal direction from the upward direction. The object to be processed is placed on the substrate; the substrate is placed on the substrate; and the receiving portion is located at a position corresponding to the abutting portion of the ultrasonic vibration portion and the object to be processed, and is receivable from the bottom In the above-described substrate, the ultrasonic vibration unit applies the ultrasonic vibration to the object to be processed in a state in which the substrate is received by the receiving portion.

因此,本發明之超音波振動接合裝置,即使在例如基板發生形變及/或翹曲,亦對於該基板不會造成損壞(damage),且可正常地在該基板上進行超音波振動接合被處理體。Therefore, the ultrasonic vibration bonding device of the present invention does not cause damage to the substrate even if, for example, the substrate is deformed and/or warped, and the ultrasonic vibration bonding can be normally performed on the substrate. body.

本發明之目的、特徵、態樣、以及優點,藉由下述之詳細說明與檢附圖式,即可更加明瞭。The objects, features, aspects and advantages of the present invention will become more apparent from

在以下之實施形態係舉對於厚度小於4mm之玻璃基板,進行超音波振動接合作為被處理體之導電性引線之情形為例而說明。In the following embodiments, a case where ultrasonically vibrating bonding is performed as a conductive lead of a target object for a glass substrate having a thickness of less than 4 mm will be described as an example.

例如對於使用在太陽電池之玻璃基板,為了形成PN接合等而施予成膜處理及/或熱處理。由於該成膜處理及/或熱處理,會在薄厚度之玻璃基板上,產生各式各樣之形狀、大小之形變及/或翹曲。For example, a glass substrate used in a solar cell is subjected to a film formation process and/or a heat treatment in order to form a PN junction or the like. Due to the film formation treatment and/or heat treatment, various shapes and sizes of deformation and/or warpage are generated on a thin glass substrate.

在下述中係根據圖式具體地說明使用本發明之超音波振動接合裝置,來對產生有該形變及/或翹曲之玻璃基板之電極層,進行接合引線之情形。In the following, a case will be described in which the electrode layer of the glass substrate on which the deformation and/or warpage is generated is bonded using the ultrasonic vibration bonding device of the present invention.

<第一實施形態><First Embodiment>

第1圖係為顯示本實施形態之超音波振動接合裝置100之構成之剖面圖。另外,在第1圖所示之例係在玻璃基板1產生有局部性的翹曲1a。在第1圖所示之例中係圖示對於產生該翹曲1a之部分之玻璃基板,進行超音波振動接合引線2之情形。Fig. 1 is a cross-sectional view showing the configuration of the ultrasonic vibration bonding apparatus 100 of the present embodiment. Further, in the example shown in Fig. 1, a local warp 1a is generated in the glass substrate 1. In the example shown in Fig. 1, the case where the glass substrate of the portion where the warpage 1a is generated is ultrasonically bonded to the lead wire 2 is shown.

超音波振動接合裝置100係由加壓機構11、接合工具12、超音波振動子13、承載台(table)14、以及承受部15所構成。其中,由加壓機構11、接合工具12以及超音波振動子13,來構成超音波振動部。The ultrasonic vibration bonding apparatus 100 is composed of a pressurizing mechanism 11, a bonding tool 12, an ultrasonic vibrator 13, a table 14, and a receiving portion 15. Among these, the ultrasonic mechanism is constituted by the pressurizing mechanism 11, the bonding tool 12, and the ultrasonic vibrator 13.

在超音波振動部11、12、13中,加壓機構11係可對於接合工具12,從第1圖之上方方向朝下方向施加預定之壓力(例如,50公斤(Kg)左右之壓力)。此外,超音波振動子13係可對接合工具12,施加水平方向(例如,向第1圖之紙面表背方向20千赫茲(kHz))之超音波振動。In the ultrasonic vibration units 11, 12, and 13, the pressurizing mechanism 11 can apply a predetermined pressure (for example, a pressure of about 50 kg (Kg)) downward from the upper direction of the first drawing to the bonding tool 12. Further, the ultrasonic vibrator 13 is capable of applying ultrasonic vibration to the bonding tool 12 in the horizontal direction (for example, 20 kHz in the front and back of the first drawing).

如第1圖所示,於超音波振動接合處理之際,在承載台14上載置、固定有玻璃基板1,且該玻璃基板1上之預定之部位,配置引線2。接著,將接合工具12予以抵接在該引線2上。然後,一邊透過該接合工具12對於引線2從上方向施加預定之壓力,一邊使該接合工具12向水平方向進行超音波振動。藉此,即可在玻離基板上進行超音波振動接合引線2。As shown in Fig. 1, in the ultrasonic vibration bonding process, the glass substrate 1 is placed and fixed on the stage 14, and the lead 2 is placed on a predetermined portion of the glass substrate 1. Next, the bonding tool 12 is abutted on the lead 2. Then, while the bonding tool 12 applies a predetermined pressure to the lead 2 from the upper direction, the bonding tool 12 is ultrasonically vibrated in the horizontal direction. Thereby, the ultrasonic vibration bonding lead 2 can be performed on the glass substrate.

在承載有玻璃基板1之承載台14上,貫穿地設置有期望之大小、形狀之孔14a。另外,與第1圖所示之孔14a之形狀不相同,在進行例如線狀之引線2之接合之情形,亦可在承載台14貫穿地設置有對合該引線2之接合位置之 細長孔14a。A hole 14a having a desired size and shape is provided through the stage 14 on which the glass substrate 1 is placed. Further, unlike the shape of the hole 14a shown in Fig. 1, in the case where, for example, the wire lead 2 is joined, the bonding position of the lead 2 may be provided in the carrying table 14 so as to be penetrated. An elongated hole 14a.

承受部15係以能夠接觸、非接觸玻璃基板1之方式,可於上下方向進行移動。此外,承受部15係位在於接合工具12之與引線2的近接部之位置,並可從下方向承載玻璃基板1。在本實施形態之超音波振動接合裝置100中,承受部15之上表面部係經由孔14a而直接與玻璃基板1之下表面接觸,承受部15係承接固定在承載台14之玻璃基板1。另外,在本實施形態中,承載台14係為固定,不上下移動者。The receiving portion 15 is movable in the vertical direction so as to be in contact with and in contact with the glass substrate 1. Further, the receiving portion 15 is located at a position where the bonding tool 12 is in contact with the lead 2, and can carry the glass substrate 1 from the lower direction. In the ultrasonic vibration bonding apparatus 100 of the present embodiment, the upper surface portion of the receiving portion 15 is in direct contact with the lower surface of the glass substrate 1 via the hole 14a, and the receiving portion 15 is received and fixed to the glass substrate 1 of the stage 14. Further, in the present embodiment, the stage 14 is fixed and does not move up and down.

從前述構成可了解到,在超音波振動接合裝置100中,在超音波振動接合處理之際,承受部15係向上方向移動。而且,藉由接合工具12與承受部15,經由孔14a,將玻璃基板1與引線2予以挾持在接合部分中。然後,在承受部15承接玻璃基板1之下表面之狀態,接合工具12係對引線2上一邊施加壓力一邊進行超音波振動。As can be understood from the above configuration, in the ultrasonic vibration bonding apparatus 100, the receiving portion 15 moves in the upward direction during the ultrasonic vibration bonding processing. Moreover, the glass substrate 1 and the lead 2 are held in the joint portion via the hole 14a by the bonding tool 12 and the receiving portion 15. Then, in a state where the receiving portion 15 receives the lower surface of the glass substrate 1, the bonding tool 12 performs ultrasonic vibration while applying pressure to the lead 2.

進行說明針對本實施形態之超音波振動接合裝置100之動作。The operation of the ultrasonic vibration bonding apparatus 100 of the present embodiment will be described.

首先,在承載台14上載置、固定玻璃基板1,使引線2配置在玻璃基板1上之接合位置。接著,使承受部15於上方向移動,經由孔14a,使承受部15之上表面部接觸於玻璃基板1之下表面。復使接合工具12抵接在引線2上。如第1圖所示,藉由到此為止之動作,在接合部分中透過接合工具12與承受部15,經由孔14a,將玻璃基板1與引線2予以挾持。First, the glass substrate 1 is placed and fixed on the stage 14 so that the lead 2 is placed at the bonding position on the glass substrate 1. Next, the receiving portion 15 is moved in the upward direction, and the upper surface portion of the receiving portion 15 is brought into contact with the lower surface of the glass substrate 1 via the hole 14a. The bonding tool 12 is repetitively abutted on the lead 2. As shown in Fig. 1, the glass substrate 1 and the lead 2 are held by the bonding tool 12 and the receiving portion 15 through the hole 14a in the joint portion by the operation up to this point.

在前述狀態中,藉由加壓機構11之控制,對接合工具12施加朝第1圖之下方向之預定之壓力。一邊進行該壓力之施加,一邊藉由超音波振動子13,對接合工具12施加第1圖之水平方向之超音波振動(超音波振動接合處理)。藉由該超音波振動接合處理,即可使玻璃基板1與引線2接合在接合位置。In the foregoing state, the bonding tool 12 is applied with a predetermined pressure in the downward direction of the first drawing by the control of the pressurizing mechanism 11. Ultrasonic vibration (ultrasonic vibration bonding processing) in the horizontal direction of the first drawing is applied to the bonding tool 12 while the pressure is applied by the ultrasonic vibrator 13. By this ultrasonic vibration bonding process, the glass substrate 1 and the lead 2 can be joined to the bonding position.

該超音波振動接合處理之後,使承受部15向第1圖之下方向移動,來解除藉由承受部15之玻璃基板1之「承受」。After the ultrasonic vibration bonding process, the receiving portion 15 is moved in the downward direction of the first drawing to release the "bearing" of the glass substrate 1 by the receiving portion 15.

如前述,在本實施形態之超音波振動接合裝置100中,係為能夠藉由承受部15來承接玻璃基板1之下表面。而且,在該承受部15之上方中,對於配置在玻璃基板1上之引線2,可實施藉由超音波振動部11、12、13之超音波振動接合。As described above, in the ultrasonic vibration bonding apparatus 100 of the present embodiment, the lower surface of the glass substrate 1 can be received by the receiving portion 15. Further, in the upper portion of the receiving portion 15, ultrasonic welding by the ultrasonic vibration portions 11, 12, and 13 can be performed on the lead wires 2 disposed on the glass substrate 1.

因此,即使在例如玻璃基板1即使產生形變及/或翹曲,超音波振動接合裝置100亦不會對玻璃基板1造成損壞,而可正常地在玻璃基板1上進行超音波振動接合引線2。Therefore, even in the case where, for example, the glass substrate 1 is deformed and/or warped, the ultrasonic vibration bonding apparatus 100 does not damage the glass substrate 1, and the ultrasonic vibration bonding lead 2 can be normally performed on the glass substrate 1.

另外,對被處理體進行複數個接合之情形,亦能以配合複數個接合位置,在俯視下開孔與該接合位置相對應的承載台14之方式,在承載台14設置複數個孔14a或者1個預定形狀之孔14a。例如,在線狀引線2之複數部位施予接合處理之情形,亦可在承載台14貫穿地設置有長細孔14a來對準該引線2之接合位置(該孔14a係位在與各接合位置相對應之位置)。Further, in the case where a plurality of joints are to be joined to the object to be processed, a plurality of holes 14a may be provided in the stage 14 in such a manner that the plurality of joint positions are combined to open the hole 14 corresponding to the joint position in plan view. A hole 14a of a predetermined shape. For example, in the case where a plurality of portions of the wire lead 2 are subjected to the bonding process, a long hole 14a may be provided in the carrier table 14 to align the bonding position of the wire 2 (the hole 14a is tied to each bonding position). Corresponding position).

藉此,由於能夠於水平方向移動超音波振動部11、12、13、以及承受部15,或者,承載台14;即可連續進行在玻璃基板1與引線2之複數點之超音波振動接合處理。Thereby, the ultrasonic vibration vibrating portions 11, 12, 13, and the receiving portion 15, or the carrier 14 can be moved in the horizontal direction, and the ultrasonic vibration bonding processing at the plurality of points of the glass substrate 1 and the lead 2 can be continuously performed. .

<第二實施形態><Second embodiment>

在本實施形態中,係針對在第一實施形態所說明之承受部15之控制進行說明。In the present embodiment, the control of the receiving portion 15 described in the first embodiment will be described.

承受部15係由氣壓缸(air cylinder)或者油壓缸所構成者,來實施下述之控制。在此,第2圖之縱軸係為承受部施加在玻璃基板1之壓力;第2圖之橫軸係為時間。The receiving portion 15 is constituted by an air cylinder or a hydraulic cylinder to perform the following control. Here, the vertical axis of Fig. 2 is the pressure applied to the glass substrate 1 by the receiving portion, and the horizontal axis of Fig. 2 is time.

首先,在進行超音波振動接合處理時,使承受部15於第1圖之上方向移動,經由孔14a,使承受部15之上表面接觸(接觸開始)在載置、固定於承載台14之玻璃基板1之下表面。在該接觸後,藉由連續前述之上方向之移動,使藉由承受部15向玻璃基板1之前述上方向之加壓予以增加。First, when the ultrasonic vibration bonding process is performed, the receiving portion 15 is moved in the upward direction of the first drawing, and the upper surface of the receiving portion 15 is brought into contact (start of contact) via the hole 14a to be placed and fixed on the stage 14 The lower surface of the glass substrate 1. After the contact, the pressure in the upward direction of the glass substrate 1 is increased by the continuous movement in the upward direction.

於是,當藉由承受部15向玻璃基板1之加壓,到達預先所設定之預定壓力值時,即停止(以預定之壓力值鎖住)承受部15之前述上方向之移動(換言之,前述之加壓)。之後,承受部15在以預定之壓力值承載玻璃基板1之狀態,實施藉由超音波振動部11、12、13之超音波振動接合處理。Then, when the pressure is applied to the glass substrate 1 by the receiving portion 15 and reaches a predetermined pressure value set in advance, the movement in the upward direction of the receiving portion 15 is stopped (locked at a predetermined pressure value) (in other words, the foregoing Pressurization). Thereafter, the receiving portion 15 performs ultrasonic vibration bonding processing by the ultrasonic vibration portions 11, 12, and 13 in a state where the glass substrate 1 is carried at a predetermined pressure value.

其中,該預定之壓力值係依據玻璃基板1之材質及厚度來決定,以及在不對玻璃基板1給予損壞之範圍下來決定。Here, the predetermined pressure value is determined depending on the material and thickness of the glass substrate 1, and is determined without giving damage to the glass substrate 1.

超音波振動接合處理之後,承受部15開始第1圖之下方向之移動,來解除藉由承受部15之玻璃基板1之承接(接觸結束)。再者,至預定之位置為止承受部15係繼續其下方向之移動。After the ultrasonic vibration bonding process, the receiving portion 15 starts moving in the downward direction of the first drawing to release the glass substrate 1 by the receiving portion 15 (contact end). Further, the receiving portion 15 continues to move in the downward direction until the predetermined position.

如此,藉由進行本實施形態之承受部15之控制,超音波振動接合裝置100即可一邊以預定之壓力值承載玻璃基板1,一邊由超音波振動部11、12、13對引線2進行超音波振動接合處理。By performing the control of the receiving portion 15 of the present embodiment, the ultrasonic vibration bonding apparatus 100 can carry the lead substrate 2 by the ultrasonic vibration units 11, 12, 13 while carrying the glass substrate 1 at a predetermined pressure value. Sonic vibration bonding processing.

<第三實施形態><Third embodiment>

在本實施形態中,針對偵測承受部15與玻璃基板1之接觸之感測器進行說明。In the present embodiment, a sensor that detects contact between the receiving portion 15 and the glass substrate 1 will be described.

第3、第4、第5圖係為顯示配設在承受部15之接觸型之接觸偵測感測器。The third, fourth, and fifth figures are contact type sensors that are provided in contact with the receiving portion 15.

第3圖係在承受部15嵌入壓電元件等接觸偵測感測器20。承受部15之上表面與接觸偵測感測器20之上表面係形成齊平,接觸感測器20係可感測玻璃基板1之下表面與承受部15之接觸。In the third drawing, the contact detecting sensor 20 such as a piezoelectric element is embedded in the receiving portion 15. The upper surface of the receiving portion 15 is flush with the upper surface of the contact detecting sensor 20, and the contact sensor 20 senses the contact between the lower surface of the glass substrate 1 and the receiving portion 15.

第4圖,在承受部15之上表面配設有突出之針(pin)狀之接觸偵測感測器21。如第5圖所示,當玻璃基板1之下表面與承受部15接觸時,接觸偵測感測器21即向承受部15內下降,藉此偵測承受部15之上表面與玻璃基板1接觸。In Fig. 4, a pin-shaped contact detecting sensor 21 is disposed on the upper surface of the receiving portion 15. As shown in FIG. 5, when the lower surface of the glass substrate 1 is in contact with the receiving portion 15, the contact detecting sensor 21 is lowered into the receiving portion 15, thereby detecting the upper surface of the receiving portion 15 and the glass substrate 1 contact.

另外,雖然在前述中,針對接觸型之感測器進行說明,但亦可採用例如利用雷射(laser)等之屬於非接觸型,來偵測玻璃基板1與承受部15之接觸之感測器。Further, although the contact type sensor has been described above, it is also possible to detect the contact between the glass substrate 1 and the receiving portion 15 by using, for example, a non-contact type such as a laser. Device.

在本實施形態中,當承受部15向第1圖上方向移動,且藉由感測器20、21,偵測出承受部15之上表面與固定在承載台14之玻璃基板1之下表面接觸時,承受部15就停止該上方向之移動。然後,在玻璃基板1與承受部15接觸之狀態,實施藉由超音波振動部11、12、13之超音波振動接合處理。In the present embodiment, when the receiving portion 15 is moved in the upward direction of the first drawing, and the sensors 20 and 21 are used, the upper surface of the receiving portion 15 and the lower surface of the glass substrate 1 fixed to the stage 14 are detected. At the time of contact, the receiving portion 15 stops the movement in the upward direction. Then, ultrasonic vibration bonding processing by the ultrasonic vibration units 11, 12, and 13 is performed in a state where the glass substrate 1 is in contact with the receiving portion 15.

超音波振動接合處理之後,承受部15開始第1圖之下方向之移動,來解除藉由承受部15之玻璃基板1之承接(接觸結束)。再者,至預定之位置為止,承受部15繼續該下方向之移動。After the ultrasonic vibration bonding process, the receiving portion 15 starts moving in the downward direction of the first drawing to release the glass substrate 1 by the receiving portion 15 (contact end). Further, the receiving portion 15 continues the movement in the downward direction until the predetermined position.

如此,在本實施形態中,在承受部15配設有偵測與玻璃基板1之接觸之感測器。因此,超音波振動接合裝置100係在承受部15確實承接玻璃基板1之狀態下,超音波振動部11、12、13,即可對引線2進行超音波振動接合處理。As described above, in the present embodiment, the receiving portion 15 is provided with a sensor for detecting contact with the glass substrate 1. Therefore, in the ultrasonic vibration bonding apparatus 100, the ultrasonic vibration unit 11, 12, and 13 can perform the ultrasonic vibration bonding processing on the lead 2 in a state where the receiving portion 15 is surely received by the glass substrate 1.

<第四實施形態><Fourth embodiment>

第6圖係為顯示本實施形態之超音波振動接合裝置200之構成之剖面圖。另外,在第1圖所示之例中,在玻璃基板1產生了局部性之翹曲1a。Fig. 6 is a cross-sectional view showing the configuration of the ultrasonic vibration bonding apparatus 200 of the present embodiment. Further, in the example shown in Fig. 1, a local warp 1a is generated in the glass substrate 1.

本實施形態之超音波振動接合裝置200與第一實施形態之超音波振動接合裝置100,在下述之點構成不相同。The ultrasonic vibration bonding apparatus 200 of the present embodiment is different from the ultrasonic vibration bonding apparatus 100 of the first embodiment in the following points.

亦即,在本實施形態之超音波振動接合裝置200中,設置有由薄厚度(例如5mm以下)之硬質樹脂所構成之承載台31,來取帶承載台14。此外,在本實施形態之承載台31,與承載台14不相同,不貫穿設置有孔14a。除此以外之構成,在兩超音波振動接合裝置100、200中係為相同。In other words, in the ultrasonic vibration bonding apparatus 200 of the present embodiment, the stage 31 composed of a hard resin having a small thickness (for example, 5 mm or less) is provided to take the tape stage 14. Further, in the stage 31 of the present embodiment, unlike the stage 14, the hole 14a is not provided. The other configuration is the same in the two ultrasonic vibration bonding devices 100 and 200.

從前述構成可了解到,在超音波振動接合裝置200中,在超音波振動接合處理之際,承受部15係於上方向移動。而且,在接合部分中,藉由接合工具12與承受部15,挾入承載台31、玻璃基板1以及引線2。而,承受部15係在隔介承載台31間接地承接玻璃基板1之下表面之狀態,接合工具12對引線2上,一邊施加壓力一邊進行超音波振動。As is apparent from the above configuration, in the ultrasonic vibration bonding apparatus 200, the receiving portion 15 moves in the upward direction during the ultrasonic vibration bonding processing. Further, in the joint portion, the carrier 31, the glass substrate 1, and the lead 2 are inserted by the bonding tool 12 and the receiving portion 15. On the other hand, the receiving portion 15 is in a state in which the lower surface of the glass substrate 1 is indirectly received by the spacer stage 31, and the bonding tool 12 performs ultrasonic vibration on the lead 2 while applying pressure.

另外,在本實施形態中,承受部15亦於上下方向進行移動,但承載台31係為固定,不上下移動者。Further, in the present embodiment, the receiving portion 15 is also moved in the vertical direction, but the stage 31 is fixed and does not move up and down.

針對本實施形態之超音波振動接合裝置200之動作進行說明。The operation of the ultrasonic vibration bonding apparatus 200 of the present embodiment will be described.

首先,在承載台31上載置、固定玻璃基板1,且在玻璃基板1上之接合位置,配置引線2。接著,使承受部15於上方向移動。藉此,如第7圖所示,在與承受部15之上表面接觸部分中,承載台31變形。接著,透過該變形之承載台31,承受部15之上表面部間接地承接固定在承載台31之玻璃基板1之下表面。First, the glass substrate 1 is placed and fixed on the stage 31, and the lead 2 is placed at the bonding position on the glass substrate 1. Next, the receiving portion 15 is moved in the upward direction. Thereby, as shown in Fig. 7, the stage 31 is deformed in a portion in contact with the upper surface of the receiving portion 15. Next, the upper surface portion of the receiving portion 15 is indirectly received and fixed to the lower surface of the glass substrate 1 of the stage 31 through the deformed stage 31.

復使接合工具12抵接在引線2上。藉由到此為止之動作,如第7圖所示,在抵接部分,藉由接合工具12與承受部15,挾入承載台31、玻璃基板1以及引線2。The bonding tool 12 is repetitively abutted on the lead 2. As a result of the operation up to this point, as shown in FIG. 7, the bonding table 31, the glass substrate 1, and the lead 2 are inserted into the contact portion by the bonding tool 12 and the receiving portion 15.

在前述狀態中,藉由加壓機構11之控制,對接合工具12施加第7圖之下方向之預定之壓力。一邊進行該壓力之施加,一邊藉由超音波振動子13,對接合工具12施加第7圖之水平方向之超音波振動(超音波振動接合處理)。藉由該超音波振動接合處理,即可使玻璃基板1與引線2在接合位置接合。In the foregoing state, the predetermined pressure in the direction of the lower side of Fig. 7 is applied to the bonding tool 12 by the control of the pressurizing mechanism 11. Ultrasonic vibration (ultrasonic vibration bonding processing) in the horizontal direction of Fig. 7 is applied to the bonding tool 12 by the ultrasonic vibrator 13 while applying the pressure. By the ultrasonic vibration bonding process, the glass substrate 1 and the lead 2 can be joined at the bonding position.

該超音波振動接合處理之後,使承受部150於第7圖之下方向移動,來解除藉由承受部15之玻璃基板1之間接性的「承接」。再者,如第6圖所示,解除藉由承受部15之「承接」,在承載台31所產生之「變形」亦恢復至原狀。After the ultrasonic vibration bonding process, the receiving portion 150 is moved in the downward direction of FIG. 7 to release the "receiving" of the interface between the glass substrates 1 of the receiving portion 15. Further, as shown in Fig. 6, the "reduction" by the receiving portion 15 is released, and the "deformation" generated on the stage 31 is restored to its original state.

如前述,在本實施形態之超音波振動接合裝置200中,即可藉由承受部15間接地承接玻璃基板1之下表面。而且,在該承受部15之上方中,即可對配置在玻璃基板1上之引線2,實施藉由超音波振動部11、12、13之超音波振動接合。As described above, in the ultrasonic vibration bonding apparatus 200 of the present embodiment, the lower surface of the glass substrate 1 can be indirectly received by the receiving portion 15. Further, the lead wires 2 disposed on the glass substrate 1 can be ultrasonically vibrated by the ultrasonic vibration portions 11, 12, and 13 above the receiving portion 15.

因此,即使在例如玻璃基板1產生形變及/或翹曲,超音波振動接合裝置200亦不會對玻璃基板1造成損壞,且可正常地在玻璃基板1上進行超音波振動接合引線2。Therefore, even if, for example, the glass substrate 1 is deformed and/or warped, the ultrasonic vibration bonding apparatus 200 does not cause damage to the glass substrate 1, and the ultrasonic vibration bonding lead 2 can be normally performed on the glass substrate 1.

此外,本實施形態之承載台31係由薄厚度之硬質樹脂所構成。因此,由於因來自承受部15之推舉,而使承載台31容易變形,故無必要在承載台31設置如在第一實施形態所說明之孔14a。Further, the stage 31 of the present embodiment is made of a hard resin having a small thickness. Therefore, since the stage 31 is easily deformed by the push from the receiving portion 15, it is not necessary to provide the hole 14a as described in the first embodiment on the stage 31.

此外,藉由可於水平方向移動超音波振動裝置11、12、13與承受部15,或者,承載台31;即可連續進行在玻璃基板1與引線2之複數點之超音波振動接合處理。換言之,藉由可於水平方向移動超音波振動裝置11、12、13與承受部15,或者,承載台31,即可在承載台31之任意之部位中,實施玻璃基板1與引線2之超音波振動接合處理。Further, the ultrasonic vibration bonding process at the plurality of points of the glass substrate 1 and the lead 2 can be continuously performed by moving the ultrasonic vibration devices 11, 12, 13 and the receiving portion 15 in the horizontal direction, or the stage 31; In other words, by moving the ultrasonic vibration devices 11, 12, 13 and the receiving portion 15 in the horizontal direction, or the carrier 31, the glass substrate 1 and the lead 2 can be implemented in any portion of the stage 31. Sonic vibration bonding processing.

<第五實施形態><Fifth Embodiment>

在第四實施形態之超音波振動接合裝置200中,藉由固定承載台31,而承受部15於上下方向移動,來進行藉由承受部15透過變形之承載台31的玻璃基板1之「承接」。In the ultrasonic vibration bonding apparatus 200 of the fourth embodiment, the receiving portion 15 is moved in the vertical direction by the fixed stage 31, and the glass substrate 1 of the stage 31 through which the receiving portion 15 is transmitted and deformed is "received". "."

在本實施形態5之超音波振動接合裝置300中,藉由以固定承受部15,承載台31於上下方向移動,來進形藉由承受部15透過變形之承載台31之玻璃基板1之「承接」。另外,該動作以外,兩超音波振動接合裝置200、300之構成、動作係為相同。In the ultrasonic vibration bonding apparatus 300 of the fifth embodiment, the carrier 31 is moved in the vertical direction by the fixed receiving portion 15, and the glass substrate 1 of the stage 31 through which the receiving portion 15 is transmitted is deformed. Undertake". In addition to this operation, the configuration and operation of the two ultrasonic vibration bonding devices 200 and 300 are the same.

以下,具體地說明針對本實施形態之超音波振動接合裝置300之動作。Hereinafter, the operation of the ultrasonic vibration bonding apparatus 300 of the present embodiment will be specifically described.

首先,在承載台31上載置、固定玻璃基板1,且在玻璃基板1上之接合位置,配置引線2。接著,使承載台31於下方向移動。藉此,如第8圖所示,在與承受部15之上表面接觸部分,承載台31變形。接著,透過該變形之承載台31,承受部15之上表面部間接地承接固定在承載台31之玻璃基板1之下表面。First, the glass substrate 1 is placed and fixed on the stage 31, and the lead 2 is placed at the bonding position on the glass substrate 1. Next, the stage 31 is moved in the downward direction. Thereby, as shown in Fig. 8, the stage 31 is deformed at a portion in contact with the upper surface of the receiving portion 15. Next, the upper surface portion of the receiving portion 15 is indirectly received and fixed to the lower surface of the glass substrate 1 of the stage 31 through the deformed stage 31.

復使接合工具12抵接在引線2上。藉由到此為止之動作,如第8圖所示,在抵接部分,藉由接合工具12與承受部15,挾入承載台31、玻璃基板1以及引線2。The bonding tool 12 is repetitively abutted on the lead 2. As a result of the operation up to this point, as shown in Fig. 8, the bonding table 12, the glass substrate 1, and the lead 2 are inserted into the contact portion by the bonding tool 12 and the receiving portion 15.

在前述狀態中,藉由加壓機構11之控制,對接合工具12施加第8圖之下方向之預定之壓力。一邊進行該壓力之施加,一邊藉由超音波振動子13,對接合工具12施加第8圖之水平方向之超音波振動(超音波振動接合處理)。藉由該超音波振動接合處理,即可使玻璃基板1與引線2在接合位置接合。In the foregoing state, the predetermined pressure in the direction below the eighth drawing is applied to the bonding tool 12 by the control of the pressurizing mechanism 11. Ultrasonic vibration (ultrasonic vibration bonding processing) in the horizontal direction of FIG. 8 is applied to the bonding tool 12 while the pressure is applied by the ultrasonic vibrator 13. By the ultrasonic vibration bonding process, the glass substrate 1 and the lead 2 can be joined at the bonding position.

該超音波振動接合處理之後,使承載台31於第8圖之上方向移動,來解除藉由承受部15之玻璃基板1之間接性的「承接」。而且,如第6圖所示,藉由解除藉由承受部15之「承接」,在承載台31所產生之「變形」亦恢復至原狀。After the ultrasonic vibration bonding process, the stage 31 is moved in the upward direction of FIG. 8 to release the "take" of the interface between the glass substrates 1 of the receiving portion 15. Further, as shown in Fig. 6, by "receiving" the receiving portion 15, the "deformation" generated on the stage 31 is restored to its original state.

如前述,在本實施形態之超音波振動接合裝置300中,即可藉由承受部15間接地承接玻璃基板1之下表面。而且,在該承受部15之上方中,即可對配置在玻璃基板1上之引線2,實施藉由超音波振動部11、12、13之超音波振動接合。As described above, in the ultrasonic vibration bonding apparatus 300 of the present embodiment, the lower surface of the glass substrate 1 can be indirectly received by the receiving portion 15. Further, the lead wires 2 disposed on the glass substrate 1 can be ultrasonically vibrated by the ultrasonic vibration portions 11, 12, and 13 above the receiving portion 15.

因此,即使在例如玻璃基板1即使產生形變及/或翹曲,超音波振動接合裝置300亦不會對玻璃基板1造成損壞,可正常地在玻璃基板1上進行超音波振動接合引線2。Therefore, even if, for example, the glass substrate 1 is deformed and/or warped, the ultrasonic vibration bonding apparatus 300 does not damage the glass substrate 1, and the ultrasonic vibration bonding lead 2 can be normally performed on the glass substrate 1.

此外,本實施形態之承載台31係由薄厚度之硬質樹脂所構成。因此,由於因與承受部15之抵接,而承載台31容易變形,故無必要在承載台31,設置如在第一實施形態所說明之孔14a。Further, the stage 31 of the present embodiment is made of a hard resin having a small thickness. Therefore, since the stage 31 is easily deformed by the contact with the receiving portion 15, it is not necessary to provide the hole 14a as described in the first embodiment on the stage 31.

此外,在本實施形態中,由於承載台31於上下方向移動,故例如在由於裝置構成之因素承受部15難以上下移動之情形時,亦可構成具有前述效果之超音波振動接合裝置300。Further, in the present embodiment, since the stage 31 is moved in the vertical direction, for example, when the receiving portion 15 is difficult to move up and down due to the configuration of the device, the ultrasonic vibration bonding device 300 having the above-described effects can be configured.

此外,藉由可於水平方向移動超音波振動裝置11、12、13與承受部15,或者,承載台31,即可連續進行在玻璃基板1與引線2之複數點之超音波振動接合處理。換言之,藉由可於水平方向移動超音波振動裝置11、12、13與承受部15,或者,承載台31,即可在承載台31之任意之部位,實施玻璃基板1與引線2之超音波振動接合處理。Further, by moving the ultrasonic vibration devices 11, 12, 13 and the receiving portion 15 in the horizontal direction, or the stage 31, the ultrasonic vibration bonding process at the plurality of points of the glass substrate 1 and the lead 2 can be continuously performed. In other words, by moving the ultrasonic vibration devices 11, 12, 13 and the receiving portion 15 in the horizontal direction, or the carrier 31, the ultrasonic waves of the glass substrate 1 and the lead 2 can be performed at any portion of the stage 31. Vibration bonding treatment.

雖已詳細說明本發明,但前述之說明係為在全部情況中之例示者,本發明並不以此為限。未加以例示之無數之變形例,係可理解為不脫離本發明之範圍而推想得到者。The present invention has been described in detail, but the foregoing description is intended to be illustrative, and the invention is not limited thereto. Numerous modifications that are not exemplified are to be understood as not departing from the scope of the invention.

1...玻璃基板1. . . glass substrate

1a...翹曲(或者形變)1a. . . Warpage (or deformation)

2...引線2. . . lead

11...加壓機構11. . . Pressurizing mechanism

12...接合工具12. . . Bonding tool

13...超音波振動子13. . . Ultrasonic vibrator

14、31...承載台14, 31. . . Carrying platform

14a...孔14a. . . hole

15...承受部15. . . Bearing department

20、21...接觸偵測感測器20, 21. . . Contact detection sensor

100、200、300...超音波振動接合裝置100, 200, 300. . . Ultrasonic vibration joint device

第1圖係為顯示第一實施形態之超音波振動裝置100之概略構成之剖面圖。Fig. 1 is a cross-sectional view showing a schematic configuration of an ultrasonic vibration device 100 according to the first embodiment.

第2圖係為用以說明第二實施形態之承受部15之控制動作之圖。Fig. 2 is a view for explaining the control operation of the receiving portion 15 of the second embodiment.

第3圖係為顯示第三實施形態之配設有接觸偵測感測器20之承受部15之構成之放大剖面圖。Fig. 3 is an enlarged cross-sectional view showing the configuration of the receiving portion 15 provided with the contact detecting sensor 20 of the third embodiment.

第4圖係為顯示第三實施形態之配設有接觸偵測感測器21之承受部15之構成之放大剖面圖。Fig. 4 is an enlarged cross-sectional view showing the configuration of the receiving portion 15 provided with the contact detecting sensor 21 of the third embodiment.

第5圖係為用以說明配設在承受部15之接觸偵測感測器21之動作之放大剖面圖。Fig. 5 is an enlarged cross-sectional view for explaining the operation of the contact detecting sensor 21 disposed in the receiving portion 15.

第6圖係為顯示第四實施形態之超音波振動接合裝置200之概略構成之剖面圖。Fig. 6 is a cross-sectional view showing a schematic configuration of the ultrasonic vibration bonding apparatus 200 of the fourth embodiment.

第7圖係為用以說明第四實施形態之超音波振動接合裝置200之動作之剖面圖。Fig. 7 is a cross-sectional view for explaining the operation of the ultrasonic vibration bonding apparatus 200 of the fourth embodiment.

第8圖係為顯示第五實施形態之超音波振動接合裝置300之概略構成之剖面圖。Fig. 8 is a cross-sectional view showing a schematic configuration of the ultrasonic vibration bonding apparatus 300 of the fifth embodiment.

1...玻璃基板1. . . glass substrate

1a...翹曲(或者形變)1a. . . Warpage (or deformation)

2...引線2. . . lead

11...加壓機構11. . . Pressurizing mechanism

12...接合工具12. . . Bonding tool

13...超音波振動子13. . . Ultrasonic vibrator

14...承載台14. . . Carrying platform

14a...孔14a. . . hole

15...承受部15. . . Bearing department

100...超音波振動接合裝置100. . . Ultrasonic vibration joint device

Claims (10)

一種超音波振動接合裝置,係可進行被處理體對基板之超音波振動接合,其具備有:超音波振動部,係可將同時進行來自上方向之加壓的水平方向之超音波振動,予以施加在前述被處理體;承載台,用以載置前述基板;以及承受部,位在對應於前述超音波振動部之與前述被處理體之抵接部的位置,且可從下方向承接前述基板;前述超音波振動部係在前述基板成為被前述承受部承接之狀態之後,對前述被處理體進行前述超音波振動之施加。 An ultrasonic vibration bonding device capable of performing ultrasonic vibration bonding of a substrate to a substrate, and comprising: an ultrasonic vibration unit for simultaneously performing ultrasonic vibration in a horizontal direction from the upward direction of pressure a substrate to be processed; a stage for placing the substrate; and a receiving portion positioned at a position corresponding to the abutting portion of the ultrasonic vibrating portion and the object to be processed, and capable of receiving the aforementioned from the lower side The substrate; the ultrasonic vibration unit applies the ultrasonic vibration to the object to be processed after the substrate is brought into the receiving portion. 如申請專利範圍第1項所述之超音波振動接合裝置,其中,在前述承載台係貫穿地設置有預定形狀之孔;前述承受部係經由前述孔直接地與前述基板接觸。 The ultrasonic vibration bonding apparatus according to claim 1, wherein the mounting base is provided with a hole having a predetermined shape, and the receiving portion is in direct contact with the substrate via the hole. 如申請專利範圍第2項所述之超音波振動接合裝置,其中,前述承受部係以能夠與前述基板接觸、非接觸之方式於上下方向進行移動。 The ultrasonic vibration bonding apparatus according to claim 2, wherein the receiving portion is moved in the vertical direction so as to be in contact with and non-contact with the substrate. 如申請專利範圍第3項所述之超音波振動接合裝置,其中,前述承受部係於上方向上昇至對前述基板之壓力達到預定之壓力值為止,且在到達至前述預定之壓力值後停止前述上昇,而維持該預定之壓力值。 The ultrasonic vibration bonding apparatus according to claim 3, wherein the receiving portion rises in an upward direction until a pressure on the substrate reaches a predetermined pressure value, and stops after reaching the predetermined pressure value. The aforementioned rise is maintained while maintaining the predetermined pressure value. 如申請專利範圍第3項所述之超音波振動接合裝置,其中,在前述承受部配設有偵測與前述基板之接觸之感測器。 The ultrasonic vibration bonding apparatus according to claim 3, wherein the receiving portion is provided with a sensor for detecting contact with the substrate. 如申請專利範圍第1項所述之超音波振動接合裝置,其中,前述承載台係由薄厚度之樹脂所構成;前述承受部係透過前述承載台而間接地承接前述基板。 The ultrasonic vibration bonding apparatus according to claim 1, wherein the carrier is made of a resin having a small thickness, and the receiving portion indirectly receives the substrate through the carrier. 如申請專利範圍第6項所述之超音波振動接合裝置,其中,前述承受部係以能夠與前述基板接觸、非接觸之方式於上下方向進行移動。 The ultrasonic vibration bonding apparatus according to claim 6, wherein the receiving portion is moved in the vertical direction so as to be in contact with and non-contact with the substrate. 如申請專利範圍第6項所述之超音波振動接合裝置,其中,前述承載台係以能夠與前述承受部接觸、非接觸之方式於上下方向進行移動。 The ultrasonic vibration bonding apparatus according to claim 6, wherein the carrier is moved in the vertical direction so as to be in contact with and not in contact with the receiving portion. 如申請專利範圍第1項所述之超音波振動接合裝置,其中,前述超音波振動部與前述承受部係能夠於水平方向移動。 The ultrasonic vibration bonding apparatus according to the first aspect of the invention, wherein the ultrasonic vibration unit and the receiving unit are movable in a horizontal direction. 如申請專利範圍第1項所述之超音波振動接合裝置,其中,前述承載台係能夠於水平方向移動。 The ultrasonic vibration bonding apparatus according to claim 1, wherein the carrier platform is movable in a horizontal direction.
TW100120831A 2010-11-30 2011-06-15 Ultrasonic vibration joint device TWI469839B (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0929445A (en) * 1995-07-26 1997-02-04 Sumitomo Wiring Syst Ltd Conductor fixing jig and welding device including the same
JP2001073129A (en) * 1999-09-07 2001-03-21 Vacuum Metallurgical Co Ltd Method and device for joining sputtering target and supporting board therefor

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* Cited by examiner, † Cited by third party
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JP2003154467A (en) * 2001-11-19 2003-05-27 Sony Corp Electric connection processing device, electric connection method and battery
JP2006239749A (en) * 2005-03-04 2006-09-14 Toray Eng Co Ltd Ultrasonic bonding method and ultrasonic bonding apparatus

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0929445A (en) * 1995-07-26 1997-02-04 Sumitomo Wiring Syst Ltd Conductor fixing jig and welding device including the same
JP2001073129A (en) * 1999-09-07 2001-03-21 Vacuum Metallurgical Co Ltd Method and device for joining sputtering target and supporting board therefor

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