[go: up one dir, main page]

TWI456641B - 濕蝕刻基板之方法 - Google Patents

濕蝕刻基板之方法 Download PDF

Info

Publication number
TWI456641B
TWI456641B TW100123517A TW100123517A TWI456641B TW I456641 B TWI456641 B TW I456641B TW 100123517 A TW100123517 A TW 100123517A TW 100123517 A TW100123517 A TW 100123517A TW I456641 B TWI456641 B TW I456641B
Authority
TW
Taiwan
Prior art keywords
substrate
wet etching
substrates
etched
substrate according
Prior art date
Application number
TW100123517A
Other languages
English (en)
Other versions
TW201303986A (zh
Inventor
Cheng Heng Chen
Original Assignee
Himax Tech Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Himax Tech Ltd filed Critical Himax Tech Ltd
Priority to TW100123517A priority Critical patent/TWI456641B/zh
Publication of TW201303986A publication Critical patent/TW201303986A/zh
Application granted granted Critical
Publication of TWI456641B publication Critical patent/TWI456641B/zh

Links

Landscapes

  • Surface Treatment Of Glass (AREA)

Claims (10)

  1. 一種濕蝕刻基板的方法,用以形成多個通孔以埋置多個晶圓級光學透鏡模組,該濕蝕刻基板的方法包括:提供多個基板;以一罩幕屏蔽每一基板,以形成多個經屏蔽的基板;於一蝕刻槽中提供一蝕刻劑;以及在一預定時間中將該些經屏蔽的基板浸於該蝕刻劑中,以形成多個經蝕刻的基板,其中每一經蝕刻的基板具有適於埋置多個晶圓級光學透鏡模組的多個通孔。
  2. 如申請專利範圍第1項所述之濕蝕刻基板的方法,其中每一基板的至少相對兩表面於該預定時間中被蝕刻。
  3. 如申請專利範圍第2項所述之濕蝕刻基板的方法,其中相鄰兩基板之間存在一間隙。
  4. 如申請專利範圍第3項所述之濕蝕刻基板的方法,其中該蝕刻槽的底部具有多個溝渠,且該些溝渠對應容納該些基板的一部分。
  5. 如申請專利範圍第1項所述之濕蝕刻基板的方法,其中每一基板為一玻璃基板,且該玻璃基板用以作為該些晶圓級光學透鏡模組的間隙層。
  6. 如申請專利範圍第1項所述之濕蝕刻基板的方法,其中該蝕刻劑包括氫氟酸。
  7. 如申請專利範圍第1項所述之濕蝕刻基板的方法,其中該些基板的數目等於或大於十個。
  8. 如申請專利範圍第1項所述之濕蝕刻基板的方法,其中每一罩幕具有一預定圖案,該預定圖案暴露每一基板將被蝕刻的部分,並覆蓋每一基板不被蝕刻的其他部分。
  9. 如申請專利範圍第1項所述之濕蝕刻基板的方法,更包括:移除該些經蝕刻之基板的該些罩幕;以及清潔該些經蝕刻的基板。
  10. 如申請專利範圍第1項所述之濕蝕刻基板的方法,更包括:在於該蝕刻槽中提供該蝕刻劑之後,加熱該蝕刻劑。
TW100123517A 2011-07-04 2011-07-04 濕蝕刻基板之方法 TWI456641B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW100123517A TWI456641B (zh) 2011-07-04 2011-07-04 濕蝕刻基板之方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW100123517A TWI456641B (zh) 2011-07-04 2011-07-04 濕蝕刻基板之方法

Publications (2)

Publication Number Publication Date
TW201303986A TW201303986A (zh) 2013-01-16
TWI456641B true TWI456641B (zh) 2014-10-11

Family

ID=48138178

Family Applications (1)

Application Number Title Priority Date Filing Date
TW100123517A TWI456641B (zh) 2011-07-04 2011-07-04 濕蝕刻基板之方法

Country Status (1)

Country Link
TW (1) TWI456641B (zh)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020139475A1 (en) * 2001-03-30 2002-10-03 Industrial Technology Research Institute Apparatus and method for etching glass panels
CN101230226A (zh) * 2007-01-25 2008-07-30 新应材股份有限公司 一种双面微影蚀刻新制程及其保护层的组成
TW200921234A (en) * 2007-11-02 2009-05-16 Hon Hai Prec Ind Co Ltd Miniature camera module and method for making same

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020139475A1 (en) * 2001-03-30 2002-10-03 Industrial Technology Research Institute Apparatus and method for etching glass panels
CN101230226A (zh) * 2007-01-25 2008-07-30 新应材股份有限公司 一种双面微影蚀刻新制程及其保护层的组成
TW200921234A (en) * 2007-11-02 2009-05-16 Hon Hai Prec Ind Co Ltd Miniature camera module and method for making same

Also Published As

Publication number Publication date
TW201303986A (zh) 2013-01-16

Similar Documents

Publication Publication Date Title
JP7226459B2 (ja) メタルマスク基材、および、メタルマスクの製造方法
TWI601223B (zh) 延長使用期限之紋理腔室元件與製造之方法
JP2008277748A5 (zh)
JP2009111363A5 (zh)
JP2014123740A5 (ja) 貫通電極を有する半導体素子及びその製造方法
JP2009111354A5 (zh)
JP2009003434A5 (zh)
WO2012173790A3 (en) Hybrid laser and plasma etch wafer dicing using substrate carrier
JP2017520906A5 (zh)
JP2015114381A5 (zh)
GB2491930B (en) Method for controlled removal of a semiconductor device layer from a base substrate
KR101407066B1 (ko) 아치형 표면을 갖는 유리 기판의 제조 방법
JP2016035967A5 (zh)
TWI470677B (zh) 觸控結構之成形方法
CN103854972A (zh) 改善晶圆表面翘曲的方法
JP2017069524A5 (zh)
JP2009194374A5 (ja) Soi基板の作製方法
JP2013174728A5 (zh)
KR20160008941A (ko) 미세 피치 패턴의 배선 구조
TWI456641B (zh) 濕蝕刻基板之方法
WO2012013214A3 (en) Method for marking a solar cell, and solar cell
JP2015154054A5 (zh)
JP2014138067A5 (zh)
JP2011504299A5 (zh)
JP2009141249A5 (zh)

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees