Claims (10)
一種濕蝕刻基板的方法，用以形成多個通孔以埋置多個晶圓級光學透鏡模組，該濕蝕刻基板的方法包括：提供多個基板；以一罩幕屏蔽每一基板，以形成多個經屏蔽的基板；於一蝕刻槽中提供一蝕刻劑；以及在一預定時間中將該些經屏蔽的基板浸於該蝕刻劑中，以形成多個經蝕刻的基板，其中每一經蝕刻的基板具有適於埋置多個晶圓級光學透鏡模組的多個通孔。A method for wet etching a substrate, comprising forming a plurality of via holes for embedding a plurality of wafer level optical lens modules, the method of wet etching the substrate comprises: providing a plurality of substrates; shielding each substrate with a mask to Forming a plurality of shielded substrates; providing an etchant in an etch bath; and immersing the shielded substrates in the etchant for a predetermined time to form a plurality of etched substrates, each of which The etched substrate has a plurality of vias adapted to embed a plurality of wafer level optical lens modules.
如申請專利範圍第1項所述之濕蝕刻基板的方法，其中每一基板的至少相對兩表面於該預定時間中被蝕刻。The method of wet etching a substrate according to claim 1, wherein at least two opposite surfaces of each substrate are etched in the predetermined time.
如申請專利範圍第2項所述之濕蝕刻基板的方法，其中相鄰兩基板之間存在一間隙。The method of wet etching a substrate according to claim 2, wherein a gap exists between adjacent two substrates.
如申請專利範圍第3項所述之濕蝕刻基板的方法，其中該蝕刻槽的底部具有多個溝渠，且該些溝渠對應容納該些基板的一部分。The method of wet etching a substrate according to claim 3, wherein the bottom of the etching groove has a plurality of trenches, and the trenches correspondingly receive a portion of the substrates.
如申請專利範圍第1項所述之濕蝕刻基板的方法，其中每一基板為一玻璃基板，且該玻璃基板用以作為該些晶圓級光學透鏡模組的間隙層。The method of wet etching a substrate according to claim 1, wherein each substrate is a glass substrate, and the glass substrate is used as a gap layer of the wafer level optical lens modules.
如申請專利範圍第1項所述之濕蝕刻基板的方法，其中該蝕刻劑包括氫氟酸。The method of wet etching a substrate according to claim 1, wherein the etchant comprises hydrofluoric acid.
如申請專利範圍第1項所述之濕蝕刻基板的方法，其中該些基板的數目等於或大於十個。The method of wet etching a substrate according to claim 1, wherein the number of the substrates is equal to or greater than ten.
如申請專利範圍第1項所述之濕蝕刻基板的方法，其中每一罩幕具有一預定圖案，該預定圖案暴露每一基板將被蝕刻的部分，並覆蓋每一基板不被蝕刻的其他部分。The method of wet etching a substrate according to claim 1, wherein each mask has a predetermined pattern exposing a portion of each substrate to be etched and covering other portions of each substrate that are not etched. .
如申請專利範圍第1項所述之濕蝕刻基板的方法，更包括：移除該些經蝕刻之基板的該些罩幕；以及清潔該些經蝕刻的基板。The method of wet etching a substrate according to claim 1, further comprising: removing the masks of the etched substrates; and cleaning the etched substrates.
如申請專利範圍第1項所述之濕蝕刻基板的方法，更包括：在於該蝕刻槽中提供該蝕刻劑之後，加熱該蝕刻劑。The method of wet etching a substrate according to claim 1, further comprising: heating the etchant after the etchant is provided in the etching bath.