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TWI450042B - 具有團塊化異氰酸酯基之含矽光阻下層膜形成組成物 - Google Patents

具有團塊化異氰酸酯基之含矽光阻下層膜形成組成物 Download PDF

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Publication number
TWI450042B
TWI450042B TW097146378A TW97146378A TWI450042B TW I450042 B TWI450042 B TW I450042B TW 097146378 A TW097146378 A TW 097146378A TW 97146378 A TW97146378 A TW 97146378A TW I450042 B TWI450042 B TW I450042B
Authority
TW
Taiwan
Prior art keywords
group
photoresist
underlayer film
formula
forming composition
Prior art date
Application number
TW097146378A
Other languages
English (en)
Chinese (zh)
Other versions
TW200941145A (en
Inventor
中島誠
菅野裕太
柴山亘
Original Assignee
日產化學工業股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日產化學工業股份有限公司 filed Critical 日產化學工業股份有限公司
Publication of TW200941145A publication Critical patent/TW200941145A/zh
Application granted granted Critical
Publication of TWI450042B publication Critical patent/TWI450042B/zh

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • H10P76/204—
    • H10P76/2041—

Landscapes

  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Silicon Polymers (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW097146378A 2007-11-30 2008-11-28 具有團塊化異氰酸酯基之含矽光阻下層膜形成組成物 TWI450042B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007311268 2007-11-30
JP2008011115 2008-01-22

Publications (2)

Publication Number Publication Date
TW200941145A TW200941145A (en) 2009-10-01
TWI450042B true TWI450042B (zh) 2014-08-21

Family

ID=40678604

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097146378A TWI450042B (zh) 2007-11-30 2008-11-28 具有團塊化異氰酸酯基之含矽光阻下層膜形成組成物

Country Status (5)

Country Link
JP (1) JP5252234B2 (fr)
KR (1) KR101524712B1 (fr)
CN (1) CN101878451B (fr)
TW (1) TWI450042B (fr)
WO (1) WO2009069712A1 (fr)

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US7833692B2 (en) * 2007-03-12 2010-11-16 Brewer Science Inc. Amine-arresting additives for materials used in photolithographic processes
US8557877B2 (en) 2009-06-10 2013-10-15 Honeywell International Inc. Anti-reflective coatings for optically transparent substrates
EP2669737A1 (fr) * 2011-01-24 2013-12-04 Nissan Chemical Industries, Ltd. Composition permettant de former des films de sous-couche de réserve qui contiennent du silicium portant un groupe organique comportant une structure dicétone
WO2013012068A1 (fr) * 2011-07-20 2013-01-24 日産化学工業株式会社 Composition de formation de film mince pour une lithographie qui contient du titane et du silicium
US9011591B2 (en) * 2011-09-21 2015-04-21 Dow Global Technologies Llc Compositions and antireflective coatings for photolithography
JP6510161B2 (ja) * 2011-12-21 2019-05-08 ダウ グローバル テクノロジーズ エルエルシー 反射防止被膜用の組成物
CN104380199A (zh) * 2012-06-12 2015-02-25 株式会社Adeka 感光性组合物
WO2014034688A1 (fr) * 2012-08-30 2014-03-06 東京応化工業株式会社 Procédé de modification de surface de substrat, film de modification et solution de revêtement utilisés pour une modification de surface de substrat
KR102099712B1 (ko) 2013-01-15 2020-04-10 삼성전자주식회사 패턴 형성 방법 및 이를 이용한 반도체 소자의 제조 방법
JP5830044B2 (ja) * 2013-02-15 2015-12-09 信越化学工業株式会社 レジスト下層膜形成用組成物及びパターン形成方法
US11194251B2 (en) * 2014-05-22 2021-12-07 Nissan Chemical Industries, Ltd. Resist underlayer film-forming composition for lithography containing polymer having blocked isocyanate structure
US11815815B2 (en) * 2014-11-19 2023-11-14 Nissan Chemical Industries, Ltd. Composition for forming silicon-containing resist underlayer film removable by wet process
KR102462194B1 (ko) * 2014-12-08 2022-11-02 닛산 가가쿠 가부시키가이샤 할로겐함유 카르본산아미드기를 가지는 가수분해성 실란을 포함하는 리소그래피용 레지스트 하층막 형성 조성물
CN107430344B (zh) * 2015-04-07 2021-03-26 三菱瓦斯化学株式会社 光刻用下层膜形成用材料、光刻用下层膜形成用组合物、光刻用下层膜及图案形成方法
US12025915B2 (en) * 2017-02-03 2024-07-02 Nissan Chemical Corporation Resist underlayer film-forming composition comprising polymer having structural unit having urea linkage
JP7315900B2 (ja) * 2017-12-20 2023-07-27 日産化学株式会社 光硬化性シリコン含有被覆膜形成組成物
US11326017B2 (en) * 2018-09-10 2022-05-10 Evonik Operations Gmbh Tin-free catalysis of silane-functional polyurethane crosslinkers
CN109111124A (zh) * 2018-09-12 2019-01-01 江苏世泰实验器材有限公司 一种防粘连盖玻片及其制备方法
JP6981945B2 (ja) * 2018-09-13 2021-12-17 信越化学工業株式会社 パターン形成方法
KR102855457B1 (ko) * 2020-03-27 2025-09-05 제이에스알 가부시키가이샤 전자선 또는 극단 자외선 리소그래피용 레지스트 하층막 형성 조성물, 전자선 또는 극단 자외선 리소그래피용 레지스트 하층막 및 반도체 기판의 제조 방법
KR102769796B1 (ko) * 2023-08-23 2025-02-20 유한회사 디씨티머티리얼 표면 개질된 금속 산화물 입자를 이용한 하드마스크 막의 제조 방법 및 레지스트 패턴 형성 방법

Citations (1)

* Cited by examiner, † Cited by third party
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JP2003122018A (ja) * 2001-10-18 2003-04-25 Shin Etsu Chem Co Ltd 化学増幅型レジストパターン用表面処理剤及びパターン形成方法

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TW457403B (en) * 1998-07-03 2001-10-01 Clariant Int Ltd Composition for forming a radiation absorbing coating containing blocked isocyanate compound and anti-reflective coating formed therefrom
TWI388876B (zh) * 2003-12-26 2013-03-11 Fujifilm Corp 抗反射膜、偏光板，其製造方法，液晶顯示元件，液晶顯示裝置，及影像顯示裝置
JP4491283B2 (ja) * 2004-06-10 2010-06-30 信越化学工業株式会社 反射防止膜形成用組成物を用いたパターン形成方法
JP2007178455A (ja) * 2005-12-26 2007-07-12 Tokyo Ohka Kogyo Co Ltd レジスト下層膜用組成物、これを用いたレジスト下層膜及び基板のパターン形成方法
JP2007192875A (ja) * 2006-01-17 2007-08-02 Tokyo Ohka Kogyo Co Ltd 下層膜形成用材料、積層体およびパターン形成方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003122018A (ja) * 2001-10-18 2003-04-25 Shin Etsu Chem Co Ltd 化学増幅型レジストパターン用表面処理剤及びパターン形成方法

Also Published As

Publication number Publication date
KR20100099240A (ko) 2010-09-10
WO2009069712A1 (fr) 2009-06-04
JP5252234B2 (ja) 2013-07-31
KR101524712B1 (ko) 2015-06-01
JPWO2009069712A1 (ja) 2011-04-14
TW200941145A (en) 2009-10-01
CN101878451B (zh) 2013-04-24
CN101878451A (zh) 2010-11-03

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