1338190 (1) 九、發明說明 【發明所屬之技術領域】 本發明係關於，敏輻射線性樹脂組成物，敏輻射線性 樹脂組成物所形成層間絕緣膜及微透鏡，以及層間絕緣膜 及微透鏡之形成方法。 【先前技術】 薄膜電晶體（以下，稱爲「TFT」）型液晶顯示元件 或磁頭元件，積體電路元件，固體攝像元件等之電子構件 中，一般係爲了使配置成層狀之配線之間予以絶緣而設置 層間絕緣膜。在形成層間絕緣膜之材料方面，爲獲得必要 之圖型形成之步驟數減少而且貝有良好膜厚均勻性爲佳， 故敏輻射線性樹脂組成物被廣泛的使用（請參照曰本特開 2001-354822號公報及特開2001-343743號公報）。 在上述電子構件中，例如TFT型液晶顯示元件，係 在層間絕緣膜之上形成透明電極膜，進而經過在其上形成 液晶定向膜之步驟而製造，故層間絕緣膜，在透明電極膜 之形成步驟中曝曬於高溫條件，或暴露於電極之圖型形成 所使用之光阻之剝離液，因此對該等則需要充分之耐性。 又近年，在TFT型液晶顯示元件中，有傾向於大畫 面化、高亮度化、高精細化、高速響應（response )化、 薄型化等之動向，在使用於該等層間絕緣膜形成用敏輻射 線性樹脂組成物方面，對輻射線爲高感度者爲所企望，又 在層間絕緣膜則被要求耐熱性，光透過率等爲高者。 (2) (2)1338190 又，傳真機、電子影印機、固體攝像元件等之晶片上 (on-chip )彩色濾光片之結像光學系或者光纖連接器之 光學系材料，係使用具有3〜1 ΟΟμη!左右透鏡徑之微透鏡 ，或將此等微透鏡以規則配列之微透鏡列陣（array )。 在微透鏡之形成，在形成對應於於透鏡之光阻圖型後 ，藉由加熱處理使熔體流動，就這樣以透鏡來利用之方法 或使熔體流動之透鏡圖型成爲光罩，藉由乾蝕刻在基層將 透鏡形狀予以轉印之方法等被廣爲採用。在此透鏡圖型之 形成，敏輻射線性樹脂組成物被廣泛地使用（請參照曰本 特開平6 - 1 8 7 0 2號公報及特開平6 - 1 3 6 2 3 9號公報）。 微透鏡所形成之元件，在其後，爲除去爲配線形成部 分之結合片（b ο n d i n g p a d )上之各種絶緣膜則使平坦化 膜及蝕刻用光阻膜形成，使用所望之光罩予以曝光，顯影 ，將結合片部分之蝕刻光阻予以除去，接著提供，藉由蝕 刻將平坦化膜或各種絶緣膜除去以將結合片部分露出之步 驟。因此在微透鏡，在平坦化膜及蝕刻光阻之塗膜形成步 驟以及蝕刻步驟中，耐溶劑性或耐熱性爲必要。 因此，形成微透鏡所使用之敏輻射線性樹脂組成物， 相對於輻射線爲高感度’又，所形成之微透鏡具有所望之 曲率半徑且爲高光透過率，故尚耐熱性，高耐溶劑性等被 要求。 又，習知之層間絕緣膜或微透鏡，在形成該等之際之 顯影時間比最適時間即使稍稍過長，在該等與基板間會有 顯影液浸透而易於剝離之故，而要迴避此等問題有必要嚴 -6- (3) (3)1338190 密地控制顯影時間’而在製品之原料利用率之點而言有其 問題。 如此’在將層間絕緣膜或微透鏡由敏輻射線性樹脂組 成物來形成時’所使用之敏輻射線性組成物被要求相對於 輻射線爲高感度’且在形成層間絕緣膜或微透鏡中之顯影 時間即使比所定時間爲長之情形並不會產生自基板之剝離 而顯示充分之顯影界限（m a r g i η )爲所期望，且所形成之 層間絕緣膜則高耐熱性，高耐溶劑性，高光透過率等被要 求’在形成微透鏡係被要求可獲得所望之曲率半徑之良好 的熔融形狀’而具有高耐熱性，高耐溶劑性，高光透過率 被要求’但要充分滿足此種要求之敏輻射線性樹脂組成物 在習知尙無所知。 再者，形成層間絕緣膜或微透鏡之基板隨之大型化， 其塗布方法’亦由習知之旋轉塗布而使得縫隙（s 1 i t )塗 布’縫隙及旋轉塗布等漸成爲主流，反映此等動向，相對 於大型基板亦顯示良好塗布性，不僅止於單純之膜厚均勻 性’使基板之端部與中心部之膜厚差變小之材料之開發亦 強烈地爲所期望。 —方面’近年來在美國，在以乙二醇乙醚乙酸酯（ ECA )之勞動作業環境下之濃度規制爲契機，對於使用於 每女Ιΐ射線性樹脂組成物之有機溶劑之安全性之關心則曰益 高漲。因此’在因規制而禁止使用乃至成爲該同業界自主 規制對象之主要有機溶劑方面，可例舉在活體内可被代謝 之可生成甲氧乙酸或乙氧乙酸，其代表例爲乙二醇類，二 (4) (4)1338190 乙二醇類，三乙二醇類等。因此，可採用對活體爲安全之 有機溶劑，爲滿足層間絕緣膜或微透鏡有關之前述諸要求 之敏輻射線性樹脂組成物之開發爲當務之急。 【發明內容】 本發明係根據以上之情事而完成者。因此，本發明之 目的係提供，對活體無安全性問題，而且對於大型基板亦 具有良好塗布性，相對於輻射線爲高感度，在顯影步驟中 ，即使超過最適顯影時間亦可形成良好圖型形狀，而具有 充分顯影界限（m a r g ί π )，進而可容易形成高耐溶劑性， 高耐熱性及高光透過率之層間絕緣膜，又具有高耐溶劑性 ，高耐熱性及高光透過率，可容易形成具有良好剖面形狀 與底部尺寸之微透鏡之敏輻射線性樹脂組成物。 再者，本發明之其他目的係提供，該敏輻射線性樹脂 組成物所形成層間絕緣膜及微透鏡，以及該等之形成方法 〇 本發明之再其他目的及優點可由以下說明可明白。 根據本發明，本發明之前述目的及優點，第..一，可由 ，含有 (A )鹼可溶性樹脂，（B )敏輻射線性酸產生劑及 (C )選自下述式（〗）所示之化合物所成群之有機溶劑爲 其特徴之敏輻射線性樹脂組成物，來達成。 (I) (5) (I) (5)13381901338190 (1) VENTION DESCRIPTION OF THE INVENTION [Technical Field] The present invention relates to a radiation sensitive linear resin composition, an interlayer insulating film and a microlens formed by a radiation sensitive linear resin composition, and an interlayer insulating film and a microlens Forming method. [Prior Art] In an electronic component such as a thin film transistor (hereinafter referred to as a "TFT") type liquid crystal display element or a magnetic head element, an integrated circuit element, or a solid-state image sensor, generally, in order to arrange a layered wiring An interlayer insulating film is provided to be insulated. In terms of the material for forming the interlayer insulating film, the number of steps for obtaining the necessary pattern formation is reduced and the film thickness uniformity is preferably good, so that the sensitive radiation linear resin composition is widely used (refer to 曰本特开2001). Japanese Patent Publication No. -354822 and JP-A-2001-343743. In the above electronic component, for example, a TFT-type liquid crystal display element is formed by forming a transparent electrode film on the interlayer insulating film and then forming a liquid crystal alignment film thereon, so that the interlayer insulating film is formed in the transparent electrode film. The step is exposed to high temperature conditions, or the pattern exposed to the electrode forms a stripper of the photoresist used, so that sufficient resistance is required for such. In recent years, in the liquid crystal display device of the TFT type, there is a tendency to increase the brightness of the screen, increase the brightness, increase the definition, high-speed response, and reduce the thickness of the liquid crystal display device. In terms of the radiation-linear resin composition, it is desirable for the radiation to be highly sensitive, and the interlayer insulating film is required to have high heat resistance and light transmittance. (2) (2) 1338190 In addition, the optical system material of the on-chip color filter of the on-chip color filter such as a facsimile machine, an electronic photocopier, or a solid-state image sensor is used. ~1 ΟΟμη! The microlens of the left and right lens diameters, or a microlens array of such microlenses arranged regularly. In the formation of the microlens, after forming the photoresist pattern corresponding to the lens, the melt is caused to flow by the heat treatment, so that the lens is utilized or the lens pattern of the melt flow is used as a mask. A method of transferring a lens shape by a dry etching in a base layer or the like is widely used. In the formation of the lens pattern, the sensitive radiation linear resin composition is widely used (refer to Japanese Patent Laid-Open Publication No. Hei 6-108- No. Hei. No. Hei. No. Hei 6- 1 3 6 2 3 9). The element formed by the microlens is formed by removing the planarization film and the etching photoresist film for removing the various insulating films on the bonding pad (b odding pad) which is the wiring forming portion, and exposing it using the desired mask. And developing, removing the etching photoresist of the bonding sheet portion, and then providing a step of removing the planarizing film or various insulating films by etching to expose the bonding sheet portion. Therefore, in the microlens, in the coating film forming step of the planarizing film and the etching photoresist and the etching step, solvent resistance or heat resistance is necessary. Therefore, the linear composition of the sensitive radiation used for forming the microlens is high in sensitivity with respect to the radiation. Further, the formed microlens has a desired radius of curvature and high light transmittance, so heat resistance and high solvent resistance are obtained. Etc. Further, in the conventional interlayer insulating film or microlens, even when the development time for forming the above is slightly longer than the optimum time, the developer penetrates between the substrates and is easily peeled off, and it is necessary to avoid such The problem is that it is necessary to strict -6- (3) (3) 1338190 tight control of the development time' and there is a problem in the point of utilization of the raw materials of the product. Thus, the linear composition of the sensitive radiation used when the interlayer insulating film or the microlens is formed of the sensitive radiation linear resin composition is required to be highly sensitive with respect to the radiation and is formed in the interlayer insulating film or the microlens. Even if the development time is longer than the predetermined time, it does not cause peeling from the substrate, and a sufficient development limit (margi η ) is exhibited, and the formed interlayer insulating film has high heat resistance, high solvent resistance, and high light. The transmittance and the like are required to have high heat resistance, high solvent resistance, and high light transmittance, which are required to obtain a good melt shape of a desired radius of curvature in forming a microlens system, but it is required to sufficiently satisfy such a requirement. The sensitive radiation linear resin composition is not known at all. Further, the substrate on which the interlayer insulating film or the microlens is formed is increased in size, and the coating method is also gradually applied to the gap by the conventional spin coating to make the slit (s1 it) coating, and the spin coating is gradually mainstreamed, reflecting these trends. The development of a material which exhibits good coatability with respect to a large-sized substrate and which is not limited to a simple film thickness uniformity, and which has a small film thickness difference between the end portion and the center portion of the substrate, is strongly desired. -In the past, in the United States, in the concentration of ethylene glycol ethyl acetate (ECA) in the labor environment, the safety of the organic solvent used in each radiant resin composition is concerned. Then the benefits are high. Therefore, in the case of prohibiting the use of regulations and becoming the main organic solvent for the self-regulation of the industry, it is exemplified that it can be metabolized in vivo to produce methoxyacetic acid or ethoxyacetic acid, and representative examples thereof are ethylene glycols. , two (4) (4) 1338190 ethylene glycol, triethylene glycol and the like. Therefore, it is an urgent matter to develop an organic solvent which is safe for living organisms, and to develop a linear composition of a sensitive radiation which satisfies the aforementioned requirements relating to an interlayer insulating film or a microlens. SUMMARY OF THE INVENTION The present invention has been completed in light of the above. Therefore, the object of the present invention is to provide a problem of no safety to a living body, and also good coating property for a large substrate, and high sensitivity with respect to radiation, and a good pattern can be formed even in an image development process even if the optimum development time is exceeded. The shape has a sufficient development limit (marg ί π ), which in turn can easily form an interlayer insulating film having high solvent resistance, high heat resistance and high light transmittance, high solvent resistance, high heat resistance and high light transmittance. It is easy to form a sensitive radiation linear resin composition of a microlens having a good cross-sectional shape and a bottom size. Further, another object of the present invention is to provide an interlayer insulating film and a microlens formed by the radiation sensitive linear resin composition, and a method of forming the same. Other objects and advantages of the present invention will be apparent from the following description. According to the present invention, the above objects and advantages of the present invention, the first one, may contain (A) an alkali-soluble resin, (B) a radiation-sensitive linear acid generator, and (C) are selected from the following formula (〗) The organic solvent in which the compounds are grouped is a special linear composition of the radiation sensitive resin. (I) (5) (I) (5) 1338190
^中’ n爲i或2, n = 1時’（丨）…表示甲越或乙基 ，R2表示碳原子數！〜4之烷或-C0_R3 (在此’ r3爲碳 原子數2〜4之烷基），⑤（2)Rl表示甲基羰基，R2表 示碳原子數3〜4之院㈣_C0-R”在此，r4爲碳原子數 1〜4之烷基），或（3 ) Ri表示碳原子數3〜4之烷基或- CO-R3 (在此，R3爲碳原子數2〜4之烷_ ) ’ r2表示碳 原子數】〜4之烷基或_c〇_R4 (但，R4爲碳原子數丨〜4之 烷基）； n = 2時，…及R2爲相互獨立之碳原子數ι〜4之烷基 或-CO-R4 (在此，r4爲碳原子數1〜4之院基）。 根據本發明’本發明之前述目的及優點，第二，可由 (A )使鹼可溶性樹脂，在含有前述式（丨）所示之化 合物之溶媒中藉由聚合來製造’接著將所得（A )鹼可溶 性樹脂之溶液與（B )敏輻射線性酸產生劑混合爲其特徴 之敏輻射線性樹脂組成物之調製方法來達成。 根據本發明，本發明之前述目的及優點，第三，可由 本發明之敏輻射線性樹脂組成物所形成層間絕緣膜來 達成。 根據本發明’本發明之前述目的及優點’第四’可由 至少下述（甲）〜（丁）之步驟依此順序實施爲其特 徵層間絕緣膜之形成方法’來達成。 -9- (6) (6)1338190 (甲）本發明之敏輻射線性樹脂組成物之塗膜在基板 上形成之步驟。 (乙）在該塗膜之至少.-部份使輻射線曝光之步驟。 (丙）曝光後之塗膜予以顯影之步驟。 (丁）顯影後之塗膜予以加熱之步驟。 根據本發明，本發明之前述目的及優點，第五，可由 本發明之敏輻射線性樹脂組成物所形成微透鏡來達成 〇 再者’根據本發明’本發明之前述目的及優點，第六 ，可由 至少下述（戊）〜（辛）之步驟依此順序實施爲其特 徵微透鏡之形成方法來達成。 (戊）本發明之敏輻射線性樹脂組成物之塗膜在基板 上形成之步驟。 (己）在該塗膜之至少一部份使輻射線曝光之步驟。 (庚）使曝光後之塗膜顯影之步驟。 (辛）使顯影後之塗膜加熱之步驟。 &下，關於本發明予以詳細說明。 敏輻射線性樹脂組成物 一（A )鹼可溶性樹脂一 本發明中鹼可溶性樹脂方面，係在鹼顯影液爲可溶， ig da鹼顯影液顯影，若可使所定形狀之層間絕緣膜及微透 鏡容易形成則並無特別限定，加成聚合系樹脂，加聚聚合 -10- (7) (7)1338190 系樹脂’縮聚系樹脂等之任..一種均可。其中，本發明中較 佳之驗可溶性樹脂，（al )具有選自羧基，羧酸酐基及羥 基所成群之至少1種之基之自由基聚合性單體（以下，稱 爲「單體（a 1 )」與（a 2 )具有環氣基之自由基聚合性單 體（以下，稱爲「單體（a2 )」）與（a 3 )單體（a 1 )及 單體（a2 )以外之其他自由基聚合性單體（以下，稱爲「 單體（a 3 )」）之共聚物（以下，稱爲「共聚物（a )」 )。 單體（a I )方面，具有羧基及/或羧酸酐基之化合物 方面，可例舉例如不飽和單羧酸類，不飽和二羧酸類，不 飽和二羧酸酐類，多元羧酸之單〔（甲基）丙烯醯氧基烷 基〕酯類，在兩末端具有羧基與羥基之聚合物之單（甲基 )丙烯酸酯類，具有羧基之不飽和多環式化合物，具有羧 酸酐基之不飽和多環式化合物等。又具有羥基之化合物， 例如具有羥蕋之（甲基）丙烯醆類，具有羥基之不飽和多 環式化合物等。 單體（a 1 )中，不飽和單羧酸類之具體例方面，有（ 甲基）丙烯酸，巴豆酸等；不飽和二羧酸類之具體例方面 ，則有順丁烯二酸，反式丁烯二酸’檸康酸’中康酸（ mesaconic acid)，衣康酸等，不跑和一孩酸軒類Z具體 例方面，有前述不飽和二羧酸類之酐等；在多元羧酸之單 〔（甲基）丙烯醯氧基烷基〕酯之具體例方面’則有琥珀 酸單〔2-(甲莛）丙烯醯氧基乙基〕’苯二甲酸單〔2-( 甲基）丙烯醯氧基乙基〕等； -11 - (8) 1338190 在兩末端具有羧基與羥基之聚合物之單（甲基 酸酯則有ω -羧基聚己內酯單（甲基）丙烯酸酯等 羧基之不飽和多環式化合物之具體例可例舉5 -羧 〔2.2. 1〕庚-2-烯，5,6-二羧基雙環〔2.2. 1〕-庚-2 羧基-5-甲基雙環〔2.2.1〕-庚-2-烯，5-羧基-5-乙 〔2.2.1〕庚-2-烯，5 -羧基-6-甲基雙環〔2.2.1〕 ，5 -羧基-6 -乙基雙環〔2.2.1〕庚-2 -烯等；具有羧 之不飽和多環式化合物之具體例方面，可各自例舉 羧基雙環〔2.2.1〕庚-2-烯酐等。 又，具有羥基之（甲基）丙烯酸酯類之具體例 有（甲基）丙烯酸羥甲酯，（甲基）丙烯酸2-羥 (甲基）丙烯酸2 -羥丙酯，（甲基）丙烯酸3 -羥 (甲基）丙烯酸4-羥丁酯，二乙二醇單（甲基） 酯，丙二醇單（甲基）丙烯酸酯，單〔2 -(甲基） 氧基乙基〕苷（glycoside)，（甲基）丙烯酸4-等；具有羥基之不飽和多環式化合物之具體例方面 自例舉 5-羥雙環〔2.2.1〕庚-2-烯，5,6-二羥雙環 〕庚-2-烯，5-羥-5-甲基雙環〔2.2.1〕庚-2-烯，5-基雙環〔2.2.1〕庚-2-烯，5-羥-6-甲基雙環〔2.2.1 烯，5·羥-6-乙基雙環〔2.2.1〕庚-2-烯，5-羥甲基 2.2.1〕庚-2-烯，5- ( 2-羥乙基）雙環〔2.2.1〕庚. 5,6-二（羥甲基）雙環〔2.2.1〕庚-2-烯，5,6-二（ 基）雙環〔2.2.1〕庚-2-烯，5-經甲編-5-甲基雙環 〕庚-2 -烯等。 )丙烯 ;具有 基雙環 -烯，5-基雙環 茇-2-烯 酸酐基 5,6-二 方面， 乙酯， 丙酯， 丙烯酸 丙烯醯 羥苯基 ，可各 [2.2.1 徑-5 -乙 〕庚-2-雙環〔 2-Μ 5 2-羥乙 [2.2.1 -12- (9) (9)1338190 在該等單體（a 1 )中，以單羧酸類，二羧酸酐類等爲 佳’尤其是’以（甲基）丙烯酸，順丁烯二酸酐等就共聚 合反應性’對於鹼顯影液之溶解性及獲得容易性之點較佳 〇 前述單體（a 1 )，可單獨或混合兩種以上使用。 單體（a2 )方面，可例舉例如，具有環氧基之（甲基 )丙烯酸酯類，具有環氧基之苯乙烯類，具有環氧基之不 飽和醚類等。 單體（a2 )中，具有環氧基之（甲菡）丙烯酸酯類之 具體例方面，有環氧丙基（甲基）丙烯酸酯，3，4 -環氧丁 基（甲基）丙烯酸酯< 6,7-環氧戊基（甲基）丙烯酸酯， 2,3-環氧環戊基（甲基）丙烯酸酯，3,4-環氣環己基（甲 基）丙烯酸酯，環氧丙基α-乙基丙烯酸酯，6,7-環氧戊基 α-乙基丙烯酸酯，α-正丙基丙烯酸環氧丙基，α-正丁基丙 烯酸環氧丙基等：具有環氧基之苯乙烯類之具體例方面， 可例舉鄰乙烯苄基環氧丙基醚，間乙烯苄基環氧丙基醚， 對乙烯苄基環氧丙基醚等；具有環氧基之不飽和醚類之具 體例方面，乙烯環氧丙甚醚’烯丙基環氧丙基醚等。 該等單體（a2)中，以具有環氧基之（甲基）丙烯酸 酯類，具有環氧基之苯乙烯類爲佳’尤其是’甲基丙烯酸 環氧丙酯，甲基丙烯酸6,7 -環氧戊酯，甲基丙烯酸3,4 -環 氧環己酯，鄰乙烯苄基環氧丙基醚’間乙烯；基環氧丙基 醚，對乙烯平基環氧丙莪醚等’就共聚合反應性或，所得 層間絕緣膜及微透鏡之耐熱性及表面硬度可提高之點較佳 -13- (10) 1338190 前述單體（a2)可單獨或混合兩種以上使用。 單體（a3 )方面，可例舉單體（a 1 )及單體（a2 外之單體例如，（甲基）丙烯酸酯類，不飽和二羧酸 類，不飽和多環式化合物，順丁烯二醯亞胺化合物’ 烯類，共軛二烯類等。該等單體（a 3 )並不具羧基’ 酐基及環氧基。 單體（a3 )中，（甲基）丙烯酸酯類之具體例方 有（甲基）丙烯酸甲酯，（甲甚）丙烯酸乙酯，（甲 丙烯酸正丙酯，（甲基）丙烯酸i -丙酯，（甲基）丙 正丁酯’（甲基）丙烯酸i-丁酯，（甲基）丙烯酸二 酯’（甲基）丙烯酸三級丁酯，2 -乙基己基（甲基） 酸醋’ i -癸基（甲基）丙烯酸酯，月桂基（甲基）丙 酷’正十三基（甲基）丙烯酸酯，（甲基）丙烯酸硬 醋’環戊基（甲基）丙烯酸酯，環己甚（甲基）丙烯 ’（甲基）丙稀酸2 -甲基環己酯，（甲基）丙烯酸 〔5.2.1.〇26〕癸-8-基，（甲基）丙烯酸2_(三 5.2·1.〇2 6〕癸8_莛氧）乙基，（甲基）丙烯酸異硼 寺’一殘酸二醋類之具體例方面，則有順丁烯二酸二 ，反式丁燒二酸二乙酯，衣康酸二乙酯等；不飽和多 化合物之具體例方面’雙環〔2.2 . 1〕庚-2 -烯，5 -甲 環〔2.2.1〕庚·2·烯，5_乙基雙環〔22]〕庚.2•烯， 妈雙環〔2.2.1〕庚-2-烯，％乙氧雙環〔22丨〕庚·2_ 5,6·—甲氧雙環〔2·2 ]〕庚·2_烯，5,6·二乙氧雙環〔 )以 二酯 苯乙 羧酸 面， m ) 烯酸 級丁 丙烯 烯酸 脂醯 酸酯 — rna 二㊆ 環〔 院基 乙酯 環式 基雙 5-甲 燒， -14 - (11) 1338190 〕庚-2-烯，5-三級丁氧基羰基雙環〔2.2. 1〕庚-2-烯 環己基氧羰基雙環〔2.2·]〕庚-2-烯，5-苯氧羰基雙 2.2 . 1〕庚-2 -烯，5，6 -二（三級丁氧基羰基）雙環〔 〕庚-2-烯，5,6-二（環己基氧羰基）雙環〔2.2. 1〕j 烯等； 順丁烯二醯亞胺化合物則有N-苯基順丁烯二醯 ，N -苄基順丁烯二醯亞胺，N -環己基順丁烯二醯亞 N-琥珀醯亞胺基-3-丨暝丁烯二醯亞胺苯甲酸酯，N-琥 亞胺基-4-順丁烯二醯亞胺丁酸酯，N-琥珀醯亞胺基· 丁烯二醯亞胺己酸酯，N-琥珀醯亞胺基-3-順丁烯二 胺丙酸酯，N - ( 9 -吖啶基）順丁烯二醯亞胺等； 苯乙烯類之具體例方面，有苯乙烯，α -甲基苯 ，鄰甲基苯乙烯，間甲基苯乙烯，對甲基苯乙烯，對 苯乙烯等； 共軛二烯類之具體例方面，可例舉1，3 -丁二烯， 間二烯，2,3-二甲基-1,3-丁二烯等。 再者，前述以外之單體（a3 )之具體例方面，可 (甲基）丙烯腈，（甲基）丙烯醯胺，氯乙烯，乙烯 氯，乙酸乙烯等。 該等單體（a 3 )中，以甲基丙烯酸酯類，不飽和 式化合物，苯乙烯類，共軛二烯類等爲佳，尤以，甲 烯酸三級丁酯，丙烯酸2 -甲基環己酯，甲基丙烯酸 〔5.2.】.02'6〕癸-8-基，雙環〔2.2.1〕庚-2-烯，苯乙 對甲氧苯乙烯，1，3 - 丁二烯等，就相對於共聚合反應 環〔 2.2.1 η -2- 亞胺 胺， 珀醯 .6 -順 醯亞 乙烯 甲氧 異戊 例舉 叉二 多環 基丙 ·—* ΤΡΗ. 二 ^ 烯， 性及 -15- (12) (12)1338190 鹼顯影液之溶解性之點較佳。 前述單體（a 3 ) 可單獨或混合兩種以上使用。 共聚物（A )中，來自單體（a 1 )之重覆單元之含有· 率’相對於全重覆單元’較佳爲5〜40重量％’特佳爲10 〜3 0重量％。該重覆單元之含有率爲不足5重量％時’所 得共聚物顯影時會有難以溶解於鹸顯影液之傾向’ 一方面 超過40重量％時，相對於所得共聚物之鹼顯影液之溶解 性會傾向於變得過大。 又，來自單體（a2 )之重覆單元之含有率’相對於全 重覆單元，較佳爲1〇〜7〇重量％，特佳爲20〜60重量％ 。該重覆單元之含有率在不足丨〇重量％時，所得之層間絕 緣膜或微透鏡之耐熱性或表面硬度會有降低之傾向’一方 面超過7 0重量％時，會有組成物之保存安定性降低之傾 .向。 又，來自單體（a3)之重覆單元之含有率’相對於全 重覆單元，較佳爲1 〇〜7 〇重量％ ’特佳爲1 5〜5 0重量。/〇 。該重覆單元之含有率不足1 0重量％時’會有組成物之 保存安定性降低之傾向，一方面超過70重量％時’所得 共聚物在顯影時會有難以溶解於鹼顯影液之傾向。 共聚物（A)之特佳之具體例方面’ 甲基丙烯酸/甲基丙烯酸3:4 -環氧環己基/甲基丙燦 酸三環〔5.2.1.02.6〕癸-8-基/苯乙烯共聚物’ 甲基丙烯酸/丙烯酸3,4-環氧環己基/甲签丙燃酸三 環〔5.2. 1 ·〇2 6〕癸-8-基/ N·環己基順丁烯二醯亞胺/苯 -16- (13) (13)1338190 乙烯共聚物， 甲蕋丙烯酸/甲基丙烯酸3，心環氧環己基/甲基丙烯 酸三環〔5.2 .〗.02 6〕癸-8 -甚/ N -環己蕋順丁烯二醯亞胺 /苯乙烯共聚物， 甲基丙烯酸/甲基丙烯酸3,4 -環氧環己基/甲基丙烯 酸三環〔5.2.丨.026〕癸-8-基/甲基丙烯酸2·羥乙_/苯 乙烯共聚物， 甲基丙烯酸/甲基丙烯酸3,4 -環氧環己基/甲基丙烯 酸三環，〔5.2.1.026〕癸-8 -基/甲基丙烯酸月桂基/苯 乙烯共聚物，甲基丙烯酸/甲基丙烯酸3,4 -環氧環己基/ 對乙烯；基環氧丙基醚/甲基丙烯酸月桂甲基丙烯酸 〔5.2 · 1 . 〇2 6〕癸-8 ·基/苯乙烯共聚物等。 共聚物（A )之聚苯乙烯換算重量平均分子量（以下 ’稱爲「Mw」。）較佳爲2,000〜〗〇〇,〇〇〇’更佳爲5,〇〇0 〜50,〇〇〇。共聚物（a )之Mw不足2,000時，顯影界線 會不充分’在顯影時塗膜之殘膜率會降低，又會有損及所 得=之層間絕緣膜或微透鏡之圖型形狀或耐熱性等之虞，一 方面超過】〇〇,〇〇〇時，會有感度降低，或損及圖型形狀之 虞。如前述使用具有Mw之共聚物（A )，可在顯影時不 致產生顯影殘留’可容易形成所定形狀之圖型。 本發明中，共聚物（A )，可單獨或混合兩種以上使 用。 共聚物（A )，係將單體（al )，單體（a2 )及單體 (a3 ) ’在溶媒中，聚合引發劑之存在下，可藉由自由基 -17- (14) (14)1338190 之聚合來製造。在製造共聚物（A )之際所用之溶媒方面 ，可例舉例如，與後述之有機溶劑（])相同之物以外， 亦可使用醇類，乙二醇烷醚類，乙二醇烷醚乙酸酯類，二 乙二醇烷醚類，丙二醇單烷醚類，丙二醇烷醚乙酸酯類（ 但，烷基之碳原子數爲1或2。），二丙二醇單烷醚類， 其他醚類，芳香族烴類，酮類，其他之酯類等。 該等溶媒中，有機溶劑（1 )以外之溶媒之具體例方 面， 醇類係指，甲醇，乙醇等； 乙二醇烷醚類係指，乙二醇單甲基醚，乙二醇單乙基 醚等； 乙二醇烷醚乙酸酯類係指，乙二醇甲基醚乙酸酯，乙 二醇乙基醚乙酸酯等； 二乙二醇烷醚類係指，二乙二醇單甲基醚，二乙二醇 單乙基醚，二乙二醇二甲基醚，二乙二醇二乙基醚，二乙 二醇乙基甲基醚等； 丙二醇單烷醚類係指，丙二醇單甲基醚，丙二醇單乙 基醚等； 丙二醇烷醚乙酸酯類（但，烷基之碳原子數爲]或2 。）則有，丙二醇甲基醚乙酸酯，丙二醇乙基醚乙酸酯等 » 二丙二醇單烷醚類方面則有，二丙二醇單甲基醚，二 丙二醇單乙基醚等； 其他之醚類有，四氫呋喃，二噁烷等： -18- (15) (15)1338190 芳香族烴類則有，甲苯，二甲苯等； 酮類則有，甲基乙基酮，環己酮，4-羥-4-甲基-2-戊 酮等； 其他之酯類則有，乙酸甲酯，乙酸乙酯，乙酸正丙酯 ，乙酸正丁酯，羥乙酸乙酯，羥乙酸正丙酯，羥乙酸正丁 酯，甲氧乙酸甲酯，甲氧乙酸乙酯，甲氧乙酸正丙酯，甲 氣乙酸正丁酯，乙氧乙酸甲酯，乙氧乙酸乙酯，乙氧乙酸 正丙酯，乙氧乙酸正丁酯，正丙氧乙酸甲酯，正丙氧乙酸 乙酯，正丙氧乙酸正丙酯，正丙氧乙酸正丁酯，正丁氧乙 酸甲酯，正丁氧乙酸乙酯，正丁氧乙酸正丙酯，正丁氧乙 酸正丁酯，乳酸甲酯，乳酸乙酯，乳酸正丙酯，乳酸正丁 酯，3 -羥丙酸甲酯，3 -羥丙酸乙酯，3 -羥丙酸正丙酯，3 -羥丙酸正丁酯，2 -甲氧丙酸甲酯，2 -甲氧丙酸乙酯，2 -甲 氧丙酸正丙酯，2 -甲氧丙酸正丁酯，2 -乙氧丙酸甲酯，2-乙氧丙酸乙酯，2 -乙氧丙酸正丙酯，2-乙氧丙酸正丁酯， 2 -正丁氧丙酸甲酯，2 -正丁氧丙酸乙酯，2 -正丁氧丙酸正 丙酯，2 -正丁氧丙酸正丁酯，3 -甲氧丙酸甲酯，3 -甲氧丙 酸乙酯，3 -甲氧丙酸正丙酯，3 -甲氧丙酸正丁酯，3 -乙氧 丙酸甲酯，3-乙氧丙酸乙酯，3-乙氧丙酸正丙酯，3-乙氧 丙酸正丁酯，3 -正丙氧丙酸甲酯，3 -正丙氧丙酸乙酯，3 -丙氧丙酸正丙酯，3 -丙氧丙酸正丁酯，3 -正丁氧丙酸甲酯 ，3 -正丁氧丙酸乙酯，3 -正丁氧丙酸正丙酯，3 -正丁氧丙 酸正丁酯，2-羥-2-甲基丙酸甲酯，2-羥-2-甲基丙酸乙酯 ，2 -羥-3 -甲鎏丁酸甲酯等。 -19 - (16) (16)1338190 該等溶媒中，以丙二醇二烷醚類，丙二醇醚乙酸酯類 ，二丙二醇二醚類，二丙二醇烷醚乙酸酯類等之有機溶劑 (I )或，乙二醇烷醚乙酸酯類，二乙二醇烷醚類，丙二 醇烷醚乙酸酯類等爲佳，尤其是，丙二醇二烷醚類，丙二 醇烷醚乙酸酯類（但，烷基之碳原子數爲3或4。），丙 二醇烷醚乙酸酯類（但，烷基之碳原子數爲】或2。）等 較佳。 前述溶媒，或可單獨或混合兩種以上使用。 本發明中，將共聚物（A )在後述之含有有機溶劑（ 1 )之溶媒中予以聚合來製造，將所得共聚物（A )之溶 液就這樣供與敏輻射線性樹脂組成物之調製較佳。又，在 製造共聚物（A )之際使用有機溶劑（])以外之溶媒之 情形，係在聚合後，將共聚物（A )以弱溶劑析出後，再 溶解於有機溶劑（1 )，以供與敏輻射線性樹脂組成物之 調製之方法；在聚合後，以有機溶劑（1 )來置換溶劑， 以供與敏輻射線性樹脂組成物之調製之方法等均可予以採 用。 在使用於共聚物（A )之製造之聚合引發劑方面，一 般可使用自由基聚合引發劑所知之物。 前述自由基聚合引發劑可例舉例如2 ; 2 ’ -偶氮雙異丁 腈，2.2’-偶氮雙-(2,4-二甲基戊腈），2,2’-偶氮雙-(4-甲氧基-2.4-二甲基戊腈）等之偶氮化合物：過氧化二苯甲 醯，月桂醯基過氧化物，三級丁基過氧特戊酸酯（ pivalate ) ，1 ,1’-雙-(三級丁基過氧）環己烷等之有機過 -20- (17) (17)1338190 氧化物：及過氧化氫等’又將該等過氧化物與還原劑組合 亦可作爲氧化還原型引發劑使用。 該等自由基聚合引發劑’可單獨或混合兩種以上使用 〇 在共聚物（A )之製造之聚合之際，爲調整分子量用 口!使用分子量調整劑。 前述分子量調整劑方面’例如，三氯甲烷，四溴化碳 等之鹵化烴類：正己基硫醇’正辛_硫醇，正十二基硫醇 ’二級十二基硫醇’锍基乙酸（t h i 0 g 1 y c 〇丨1 i c a c i d )等之 硫臨類；二甲基黃原酸（x a n t h i c )硫化物，二異丙基黃原 @二.硫化物等之黃原酸類；葱品油烯（terpin〇丨ene ) , Q. 甲基苯乙烯二聚物等。 該等分子量調整劑，可單獨或混合兩種以上使用。 〜（Β)敏輻射線性酸產生劑一 本發明中敏輻射線性酸產生劑係，藉由輻射線之曝光 吏1¾產生之成分（以下，稱爲「（ Β )酸產生劑」）所成 〇 (B )酸產生劑方面，在具有前述特性之範圍並無特 別限定，但本發明中較佳之（B )酸產生劑係，含有丨，2_ 蔡酿二疊氮磺酸酯。 則述1，2 -蔡醌二鹽氣磺酸醋方面，可例舉例如，酸性 化合物或醇性化合物（以下，該等化合物稱爲「酚性化合 物」等）。）與，]，2-萘醌二疊氮磺酸鹵化物之縮合物， -21 - (18) (18)1338190 該1 ,2-萘醌二疊氮磺酸鹵化物方面，以1，2-萘醌二疊氮磺 酸氯化物較佳。 酚性化合物等方面，可例舉例如，三羥二苯基酮類， 四羥二苯基酮類，五羥二苯基酮類，六羥二苯基酮類，聚 (羥苯基）鏈烷類等。 該等化合物之具體例方面， 三羥二苯基酮類則有，2,3,4-三羥二苯基酮，2,4,6-三 羥二苯基酮等； 四羥二苯基酮類則有，2,2’，4,4’-四羥二苯莛酮， 2,3,4,3’-四羥二苯基酮，2,3,4,4’-四羥二苯基酮， 2,3,4，2 ’ -四羥-4、甲基二苯基酮，2，3,4,4 ’ -四羥-3 ’ -甲氧二 苯基酮等； 五羥二苯基酮類則有，2,3,4,2’，6’-五羥二苯基酮等； 六羥二苯基酮類則有，2,4,6,3’，4’，5’-六羥二苯基酮 ，3,4,5,3’，4’：5’-六羥二苯基酮等； 聚（羥苯基）鏈烷類可例舉，2-甲基-2- ( 2,4-二羥苯 基）-4- ( 4-羥苯基）-7-羥色滿，2-〔雙{ ( 5-i-丙基-4-羥-2-甲基）苯基丨甲_〕酚，I -〔 1-〔 3-{〗-(4-羥苯基）-1-甲基乙基}-4,6-二羥苯基〕-1-甲基乙基〕-3-〔 1-〔 3-{1-(4-羥苯基）-]-甲基乙蕋}-4,6-二羥苯基〕-1-甲基乙基〕 苯，4,6-雙〔1-(4-經苯基）-1-甲基乙基〕-]，3-二羥苯雙 (2,4-二羥苯基）甲烷，雙（4-羥苯基）甲烷，三（4-羥 苯莛）甲烷，1，1，1 -三（4 -羥苯基）乙烷，雙（2，3，4 -三羥 苯甚）甲烷，2,2-雙（2,3，4-三羥苯基）丙烷，丨，〗，3-三個 -22- (19) 1338190 (2，5 -二甲越-4 -羥苯基）-3 -苯驻丙烷，4,4，-〔 1 -〔 4 - {]-(4-羥苯基）-】-甲基乙基丨苯基〕亞乙基〕雙酚，雙（ 2，5 -二甲基-4 -羥苯基）-2 -羥苯基甲烷，3,3,3 ’，3 ’ -四甲基-1，1 ’ -螺雙茚（i n d e n e ) · 5，6，7，5 ’，6，，7，-己醇，2，2，4 -三甲 基-7,2’，4’-三羥黃烷（fUvan )等。 酚性化合物等與1，2-萘醌二疊氮磺酸鹵化物之縮合反 應’在無溶媒下或溶媒中，可於觸媒之存在下實施。 前述溶媒方面，可例舉例如，酮類，環狀醚類等，更 具體言之，丙酮，甲基乙基酮，甲基異戊酮，甲基異丁越 酮，1,4-二噁烷，1,3,5-三噁烷等。 在使用溶媒之場合，其使用量，相對於酚化合物等與 ]，2 -萘醌二疊氡磺酸鹵化物之合計]〇 〇重量份，較佳爲 1 0 0〜5 0 0重量份。 又，前述觸媒方面’可使用驗性化合物。 前述鹸性化合物方面’例如’三乙胺’氯化四甲基錢 ，溴化四甲基銨，吡啶等較佳。 觸媒之使用量，相對於1，2 -萘醌二疊氮磺酸鹵化物1 莫耳，較佳爲】莫耳以上，更佳爲〗·05〜桌耳。 酣性化合物等與1，2-萘醌二疊氮磺酸鹵化物之縮合反 應之條件中，反應溫度，較佳爲0〜5(rc，更佳爲〇〜40 t ,特佳爲1 〇〜3 5 °c，反應時間，較佳爲〇 ·5〜1 〇小時， 3小時 更佳爲1〜5小時’特佳爲 縮合反應後 ，將不溶部分濾出後’將據液投入大量之 1〜3 0重景％稀鹽酸水溶液中，使反應生成物析出。其 -23- (20) (20)1338190 後’將析出物過濾，水洗之使濾液成爲中性爲止後，乾燥 之，而可獲得]，2 -萘醌二#氮磺酸酯。 本發明中，（B )酸產生劑’可單獨或混合兩種以上 使用。 (B )酸產生劑之使用量，相對於（A )鹼可溶性樹 脂爲1 00重量份，較佳爲5〜1 〇〇重量份，更佳爲]0〜5 0 重量份。 (B )酸產生劑之使用量不足5重量份，相對於鹼顯 影液之曝光部分與未曝光部分之溶解度之差變小，使得圖 型形成爲困難，所得之層間絶緣膜或微透鏡之耐熱性或耐 溶劑性有降低之虞，一方面超過】〇〇重量份時，對曝光部 分之鹼顯影液之溶解度會降低，會有顯影困難之虞。 -其他添加劑- 本發明之敏輻射線性樹脂組成物係，將前述（A )鹼 可溶性樹脂及（B )酸產生劑溶解於後述之（C )有機溶 劑中之組成物所成，但可因應需要，可進而含有感熱性酸 產生劑，具有至少1個聚合性不飽和鍵結之聚合性化合物 (以下，單稱爲「聚合性化合物」），（A )鹼可溶性樹 脂以外之環氧樹脂（以下，稱爲「其他之環氧樹脂」。） ，界面活性劑，密接助劑等其他之添加劑。 前述感熱性酸產生劑，可具有藉由加熱使酸產生之成 分，可使層間絕緣膜及微透鏡之耐熱性或硬度進而提高之 作用之成分。 -24 - (21) (21)1338190 感熱性酸產生劑方面，可例舉，鎏鹽，苯并噻唑鏺鹽 ，銨鹽，锬鹽等之鏺鹽。較佳爲鎏鹽，苯并噻唑鐵鹽。 上述鎏鹽之方面具體例方面，可例舉，烷基鎏鹽，苄 基鎏鹽，二苄基鎏鹽，取代苄基鎏鹽等。更具體言之， 烷基鎏鹽則有4 -乙醯苯基二甲基鎏六氟銻酸鹽，4 -乙 醯氧基苯基二甲基鎏六氟砷酸鹽，二甲基-4 -(苄基氧羰 基氧）苯基鎏六氟銻酸鹽，二甲基-4-(苯甲醯氧基）苯 基鎏六氟銻酸鹽，二甲基-4-(苯甲醯氧基）苯基鎏六氟 砷酸鹽，二甲基-3-氯-4-乙醯氧基苯基鎏六氟銻酸鹽等； 苄基鎏鹽則有苄基-4-羥苯基甲基鎏六氟銻酸鹽，苄 基-4-羥苯基甲基鎏六氟磷酸鹽，苄基-4-乙醯氧基苯基甲 基鎏六氟銻酸鹽，苄基-4-甲氧基苯基甲基鎏六氟銻酸鹽 ，苄基-2-甲基-4-羥苯基甲基鎏六氟銻酸鹽，苄基-3-氯-4-'經苯基甲基鎏六氟砷酸鹽等； 二苄基鎏鹽則有二苄基-4-羥苯基鎏六氟銻酸鹽，二 苄基-4-羥苯基鎏六氟磷酸鹽，二爷基-4-乙醯氧基苯基鎏 六氟銻酸鹽，二苄基-4 -甲氧基苯基鎏六氟銻酸鹽，二苄 基-3-氯-4-經苯基鎏六氟砷酸鹽，二苄基-3-甲基-4-羥-5-三級丁基苯基鎏六氟銻酸鹽，苄基-4-甲氧基苄基-4-羥苯 基鎏六氟磷酸鹽等； 取代苄基鎏鹽則有對4-甲氧基苄基-4-羥苯基甲基鎏 六氟銻酸鹽，4-氯苄基-4-羥苯基甲基鎏六氟銻酸鹽，4-硝 苄基-4-羥苯基甲基鎏六氟銻酸鹽，4-氯苄基-4-羥苯基甲 基鎏六氟磷酸鹽，4_硝苄基-3-甲基-4-羥苯基甲基鎏六氟 -25- (22) (22)1338190 銻酸鹽，3,5-二氯苄基-4-羥苯基甲基鎏六氟銻酸鹽，2-氯 苄基-3-氯-4-羥苯基甲基鎏六氟銻酸鹽等。 上述苯并噻唑鏺鹽之具體例方面可例舉3 -苄基苯并 噻唑鎰六氟銻酸鹽，3-苄·基苯并噻唑鐺六氟磷酸鹽，3-苄 基苯并噻唑鐵四氟硼酸鹽，3 - ( 4 -甲氣基苄基）苯并噻唑 鑰六氟銻酸鹽，3 -苄基-2 -甲蕋硫代苯并噻唑鎩六氟銻酸 鹽，3 -苄蕋-5 -氯苯并噻唑鐵六氟銻酸鹽等之苄基苯并噻 唑鐵鹽。 該等感熱性酸產生劑中，尤其是4 -乙醯氧基苯基二 甲基鎏六氟砷酸鹽，苄基-4-羥苯基甲基鎏六氟銻酸鹽， 苄基-4-乙醯氧基苯基甲基鎏六氟銻酸鹽，二苄基-4-羥苯 基鎏六氟銻酸鹽，3-苄基苯并噻唑鎰六氟銻酸鹽爲佳。 又，該等較佳之感熱性酸產生劑販售品方面，可例舉 San-Aid SI-L85，同 SI-L110，同 SI-L145，同 SI-L150, 同SI-L1 60 (三新化學工業公司製）等。 前述感熱性酸產生劑，可單獨或混合兩種以上使用。 感熱性酸產生劑之使用量，相對於（A )鹼可溶性樹 脂1 〇〇重量份，較佳爲20重量份以下，更佳爲5重量份 以下。感熱性酸產生劑之使用量超過2 0重量份時，塗膜 形成步驟中析出物易於析出，會有在塗膜形成上造成障礙 之虞。 聚合性化合物方面，例如，單官能（甲基）丙烯酸酯 類’ 2官能（甲基）丙烯酸酯類，3官能以上之（甲基） 丙烯酸酯類等較佳。 -26- (23) (23)1338190 前述單官能（甲3S )丙烯酸酯方面，可例舉例如2 -羥乙基（甲基）丙烯酸酯，卡必醇（甲基）丙烯酸酯，（ 甲基）丙烯酸異硼烷酯，3 -甲氧丁基（甲基）丙烯酸酯， 2 -(甲基）丙烯醯氧乙莛-2 -羥内基酞酸酯等。 又，該等單官能（甲基）丙烯酸酯類之販售品方面， 可例舉例如 A r ο n i X Μ - 1 0 1，同 Μ - 1 1 1，同 Μ - 1 1 4 (以上， 柬亞合成公司）製），KAYARAD TC-110S，同 TC-120S (以上，日本化藥公司）製），Biscoat 158，同23Π ( 以上，大阪有機化學工業公司））製）等。 前述2官能（甲基）丙烯酸酯方面，可例舉例如乙二 醇二（甲基）丙烯酸酯，1,6 -己二醇二（甲基）丙烯酸酯 ’ 1，9 -壬二醇二（甲基）丙烯酸酯，四乙二醇（甲基）丙 烯酸酯’聚丙二醇二（甲基）丙烯酸酯，雙苯氧乙醇葬二 (甲基）丙烯酸酯’雙苯氧乙醇茜二（甲基）丙烯酸酯等 〇 又’該等2官能（甲基）丙烯酸酯類之販售品方面， 可例舉例如AronixM-210，同M-240，同M-6200 (以上， 東亞合成公司製）’ KAYARAD HDDA，同HX-22〇，同 R-604 (以上’日本化藥公司製），BiSC0at 260，同312 ，同335HP (以上，大阪有機化學工業公司製）等。 前述3官能以上之（甲茲）丙烯酸酯類方面，可例舉 例如二羥甲基丙烷三（甲基）丙烯酸酯，新戊四醇三（甲 基）丙燒酸醋’三（（甲基）丙烯醯氧签乙基）磷酸醋， 新戊四四（甲基）丙稀酸酷’二新戊四醇五（甲基）丙 -27- (24) (24)1338190 烯酸酯，二新戊四醇六（甲基）丙烯酸酯等， 又，該等3官能以上之（甲基）丙烯酸酯類之'吸售品 方面，可例舉例如Aronix M-3〇9 ’同M-4 0 0 ’同M·405 ’ 同 Μ - 4 5 0，同 Μ - 7 1 0 0 ’ 同 Μ - 8 0 3 0，同 Μ - 8 0 6 0 (以上’東 亞合成公司）製）’ KAYARAD ΤΜΡΤΑ ’同 DPHA ’同 DPCA-20，同 DPCA-30，同 DPCA-60，同 DPCA-】2〇(以 上，日本化藥公司製）’ B i s c 〇 a t 2 9 5，同3 0 0 ’同3 6 0 ’ 同GPT，同3PA ’ （以上，大阪有機化學工業公司）製） 等。 該等聚合性化合物中，以3官能以上之（甲基）丙烯 酸酯類爲佳，以三羥甲越丙烷三（（甲基）丙烯酸酯’新 戊四醇四（甲基）丙烯酸酯，二新戊四醇六（甲基）丙烯 酸酯爲特佳 前述聚合性化合物可單獨或混合兩種以上使用。 聚合性化合物之使用量，相對於（A )鹼可溶性樹脂 1 0 0重量份’較佳爲5 0重量份以下，更佳爲3 0重量份以 下。聚合性化合物之使用量超過5 〇重量份，在塗膜會有 膜皸裂產生之虞。 本發明之敏輻射線性樹脂組成物因含有聚合性化合物 ’故可使所得之層間絕緣膜及微透鏡之耐熱性，表面硬度 等進而提高。 其他之環氧樹脂方面，（A )若爲可與鹼可溶性樹脂 相溶之範圍則無特別限定。其中以雙酚A型環氧樹脂， 酣酌醛淸漆型環氧樹脂，甲酚酚醛淸漆型環氧樹脂，環狀 •28- (25) (25)1338190 脂肪族環氧樹脂，環氧丙基酯型環氧樹脂，環氧丙基胺型 環氧樹脂，雜環式環氧樹脂，（甲基）丙烯酸環氧丙基之 共聚物等爲佳，更佳爲雙酚A型環氧樹脂，甲酚酚醛淸 漆型環氧樹脂，環氧丙基酯型環氣樹脂等。 其他之環氧樹脂之使用量，相對於（A )鹼可溶性樹 脂1 00重量份’較佳爲30 m量份以下。其他環氧樹脂之 使用量超過3 〇 m量份時，塗膜之膜厚均勻性爲不充分。 本發明之敏輻射線性樹脂組成物可含有其他環氧樹脂 ’而可進而提高所得之層間絕緣膜及微透鏡之耐熱性，表 面硬度等。 前述界面活性劑，具有可使塗布性提高之作用之成分 〇 界面活性劑方面’以例如氟系界面活性劑，聚矽氧系 界面活性劑及非離子系界面活性劑爲佳。 在前述氟系界面活性劑之方面具體例方面，可例舉例 如’丨，1，2,2-四氟正辛基（1;1;2;2 -四氟丙基）醚， 1，，]，2,2-四氟正辛基己基醚，八乙二醇二（1，1,22_四氟 正]基）酸’六乙二醇（151，2,2,3,3_六氟-正戊蕋）醚， 八丙—— ( I，1，2，2 -四氣正丁基）醚，六丙二醇二（ ,,，-’3,3-八藏正戊基）酿，全氣正十二基購酸納， 1，1 ’ 2 ’ 2，8 ’ 8 ’ 9，9，1 0 , 1 0 -十氟正十二基，】，丨，2 : 2，3,3 _ 六氟正 癸基等以外’可例舉氟烷基苯磺酸鈉類；氟烷基氧乙烯醚 類’姚化氟烷莛銨類’氟烷基聚氧化乙烯醚類，全氟烷基 聚^乙醇類：全氟烷装烷氧酸酯類；氟系烷酯類等。 -29- (26) (26)1338190 又，該等氟系界面活性劑之販售品方面，可例舉BM-1000，BM-1100 (以上，BM Chemie 社製），Megafuck F142D，同 F172，同 F]73，同 F183，同 F]78，同 F191 ，同 F471 (以上，大日本墨水化學工業公司製）， Fulorade FC-170C，同 FC-171，同 FC-430，同 FC-431 ( 以上，住友3 Μ公司製），S u fu r ο n S - 1 1 2，同S - 1 1 3，同 S-131’ 同 S-141，同 S-145，同 S-382，同 SC-101，同 SC-102，同 SC-103，同 SC-104，同 SC-105，同 SC-106 (旭硝子）公司）製），EF Top EF30]，同303，同352 (新秋田化成公司製）SH-28PA，同-190，同-193'SZ-6032 ， SF-8428 ， DC-57 ，同-190 ((以上，東麗^中' n is i or 2, n = 1 '(丨)... means A or E, and R2 means the number of carbon atoms! ~4 alkane or -C0_R3 (wherein 'r3 is an alkyl group having 2 to 4 carbon atoms), 5(2) Rl represents a methylcarbonyl group, and R2 represents a hospital having a carbon number of 3 to 4 (four)_C0-R" , r4 is an alkyl group having 1 to 4 carbon atoms, or (3) Ri represents an alkyl group having 3 to 4 carbon atoms or -CO-R3 (wherein R3 is an alkane having 2 to 4 carbon atoms) 'r2 represents the number of carbon atoms】~4 alkyl or _c〇_R4 (however, R4 is an alkyl group having a carbon number of 丨~4); when n = 2, ... and R2 are mutually independent carbon atoms ι ～4 alkyl or -CO-R4 (here, r4 is a hospital group having 1 to 4 carbon atoms). According to the present invention, the foregoing objects and advantages of the present invention, and second, (A) an alkali-soluble resin Manufactured by polymerization in a solvent containing a compound represented by the above formula (丨), and then mixing the solution of the obtained (A) alkali-soluble resin with (B) a radiation-sensitive linear acid generator to a characteristic radiation linearity thereof According to the present invention, the foregoing objects and advantages of the present invention, and thirdly, can be achieved by the interlayer insulating film formed by the sensitive radiation linear resin composition of the present invention. According to the present invention, the above-mentioned objects and advantages of the present invention 'fourth' can be achieved by at least the following steps (A) to (d) being carried out in this order as a method of forming a characteristic interlayer insulating film. -9- ( 6) (6) 1338190 (a) The step of forming a coating film of the sensitive radiation linear resin composition of the present invention on a substrate. (b) a step of exposing the radiation to at least a portion of the coating film. a step of developing the coated film after exposure. (D) a step of heating the coated film after development. According to the present invention, the above objects and advantages of the present invention, and fifth, can be made of the sensitive radiation linear resin composition of the present invention. Forming a microlens to achieve the above object and advantages of the present invention according to the present invention. Sixth, the method of forming the characteristic microlens can be carried out in this order by at least the following steps (pent) to (xin). (a) a step of forming a coating film of the sensitive radiation linear resin composition of the present invention on a substrate. (a) a step of exposing the radiation to at least a portion of the coating film. Film development Step (Xin) The step of heating the coating film after development is described in detail with respect to the present invention. The radiation sensitive linear resin composition-(A) alkali-soluble resin, in the alkali-soluble resin of the present invention, The alkali developing solution is soluble, and is developed by an igda alkali developing solution. The interlayer insulating film and the microlens of a predetermined shape are easily formed, and the addition polymerization resin is added to the polymerization--10-(7) ( 7) 1338190 is a resin which is a polycondensation resin, etc. Among them, a soluble resin is preferably used in the present invention, and (al) has at least one selected from the group consisting of a carboxyl group, a carboxylic anhydride group, and a hydroxyl group. The radically polymerizable monomer (hereinafter referred to as "monomer (a 1 )" and (a 2 ) a radical polymerizable monomer having a ring gas group (hereinafter referred to as "monomer (a2)") a copolymer of (a 3 ) a monomer (a 1 ) and a radical polymerizable monomer other than the monomer (a2) (hereinafter referred to as "monomer (a 3 ))" (hereinafter referred to as "copolymerization") (a)"). In the case of the monomer (a I), the compound having a carboxyl group and/or a carboxylic acid anhydride group may, for example, be an unsaturated monocarboxylic acid, an unsaturated dicarboxylic acid, an unsaturated dicarboxylic anhydride or a polycarboxylic acid. a methyl (meth) decyloxyalkyl] ester, a mono(meth) acrylate having a polymer of a carboxyl group and a hydroxyl group at both terminals, an unsaturated polycyclic compound having a carboxyl group, and an unsaturated group of a carboxylic anhydride group Polycyclic compounds and the like. Further, a compound having a hydroxyl group, for example, a (meth)acryl oxime having oxindole, an unsaturated polycyclic compound having a hydroxyl group, or the like. In the monomer (a 1 ), specific examples of the unsaturated monocarboxylic acid include (meth)acrylic acid, crotonic acid and the like; and specific examples of the unsaturated dicarboxylic acid are maleic acid and trans-butyl The enedic acid 'citratenic acid' mesaconic acid, itaconic acid, etc., does not run, and the specific example of the Z-acid acid Z, the aforementioned unsaturated dicarboxylic acid anhydride, etc.; The specific example of mono[(meth)acryloxyalkylene] is succinic acid mono [2-(methyl hydrazide) propylene oxyethyl] phthalic acid mono [2-(methyl) Propylene methoxyethyl], etc.; -11 - (8) 1338190 A single polymer having a carboxyl group and a hydroxyl group at both terminals (the methyl ester has ω-carboxypolycaprolactone mono(meth)acrylate, etc. Specific examples of the unsaturated polycyclic compound of a carboxyl group include 5-carboxy[2.2.1]hept-2-ene, 5,6-dicarboxybicyclo[2.2.1]-hept-2carboxy-5-methyl. Bicyclo [2.2.1]-hept-2-ene, 5-carboxy-5-ethyl [2.2.1]hept-2-ene, 5-carboxy-6-methylbicyclo[2.2.1], 5-carboxy- 6-ethylbicyclo[2.2.1]hept-2-ene; Specific examples of the unsaturated polycyclic compound include carboxybicyclo[2.2.1]hept-2-ene anhydride and the like. Specific examples of the (meth) acrylate having a hydroxyl group are (methyl). Hydroxymethyl acrylate, 2-hydroxypropyl 2-hydroxy(meth)acrylate, 4-hydroxybutyl 3-hydroxy(meth)acrylate, diethylene glycol mono(A) Ester, propylene glycol mono(meth)acrylate, mono[2-(methyl)oxyethyl]glycoside, (meth)acrylic acid 4-, etc.; unsaturated polycyclic compound having a hydroxyl group Specific examples are exemplified by 5-hydroxybicyclo[2.2.1]hept-2-ene, 5,6-dihydroxybicyclo]hept-2-ene, 5-hydroxy-5-methylbicyclo[2.2.1]g 2-ene, 5-ylbicyclo[2.2.1]hept-2-ene, 5-hydroxy-6-methylbicyclo[2.2.1 olefin, 5·hydroxy-6-ethylbicyclo[2.2.1]g 2-ene, 5-hydroxymethyl 2.2.1]hept-2-ene, 5-(2-hydroxyethyl)bicyclo[2.2.1]hept. 5,6-bis(hydroxymethyl)bicyclo[2.2 .1]hept-2-ene, 5,6-di(yl)bicyclo[2.2.1]hept-2-ene, 5--azyl-5-methylbicyclo]hept-2-ene, etc.) ; having a bis-cyclo-ene, 5-ylbicycloindole-2-ene anhydride group 5,6-dimer, ethyl ester, propyl ester, propylene hydroxyphenyl acrylate, each [2.2.1 diameter-5-B] Hept-2-bicyclo[2-Μ 5 2-hydroxyethyl [2.2.1 -12- (9) (9) 1338190 In these monomers (a 1 ), monocarboxylic acids, dicarboxylic anhydrides, etc. In particular, it is preferable that the (comon polymerization reactivity of (meth)acrylic acid, maleic anhydride or the like is good for the solubility and availability of the alkali developer), and the monomer (a 1 ) alone may be used alone. Or use two or more types. The monomer (a2) may, for example, be a (meth) acrylate having an epoxy group, a styrene having an epoxy group, an unsaturated ether having an epoxy group or the like. Specific examples of the (meth) acrylate having an epoxy group in the monomer (a2) include a glycidyl (meth) acrylate and a 3,4-epoxybutyl (meth) acrylate. < 6,7-epoxypentyl (meth) acrylate, 2,3-epoxycyclopentyl (meth) acrylate, 3,4-cyclohexacyclohexyl (meth) acrylate, epoxy Propyl α-ethyl acrylate, 6,7-epoxypentyl α-ethyl acrylate, α-n-propyl acrylate epoxypropyl, α-n-butyl acrylate epoxy propyl, etc.: with epoxy Specific examples of the styrene group include o-vinylbenzylepoxypropyl ether, m-vinylbenzylepoxypropyl ether, p-vinylbenzylepoxypropyl ether, etc.; Specific examples of the saturated ethers include ethylene propylene oxide and 'allyl epoxypropyl ether. Among the monomers (a2), a (meth) acrylate having an epoxy group, a styrene having an epoxy group is preferred, especially a glycidyl methacrylate, methacrylic acid 6, 7-epoxypentyl ester, 3,4-epoxycyclohexyl methacrylate, o-vinylbenzylepoxypropyl ether 'inter-ethylene; epoxidized propyl ether, vinyl flat epoxidized propyl ether 'The copolymerization reactivity or the heat resistance and surface hardness of the obtained interlayer insulating film and microlens can be improved. -13 (10) 1338190 The above monomers (a2) can be used singly or in combination of two or more. The monomer (a3) may, for example, be a monomer (a1) and a monomer (a monomer other than a2, for example, a (meth) acrylate, an unsaturated dicarboxylic acid, an unsaturated polycyclic compound, a cis-butane An enediquinone imine compound 'olefins, conjugated dienes, etc. These monomers (a 3 ) do not have a carboxyl group anhydride group and an epoxy group. Among the monomers (a3), (meth)acrylates Specific examples are methyl (meth) acrylate, ethyl (meth) acrylate, (n-propyl methacrylate, i-propyl (meth) acrylate, (methyl) propyl n-butyl acrylate (methyl) ) i-butyl acrylate, (meth) acrylate diester 'butyl methacrylate (meth) acrylate, 2-ethylhexyl (meth) vinegar ' i - fluorenyl (meth) acrylate, lauryl (methyl) propyl cool 'n-tridecyl (meth) acrylate, (meth) acrylate hard vinegar 'cyclopentyl (meth) acrylate, cycloheximide (meth) propylene '(methyl) propyl Diluted acid 2-methylcyclohexyl ester, (meth)acrylic acid [5.2.1.〇26]癸-8-yl, (meth)acrylic acid 2_(three 5.2·1.〇2 6]癸8_莛oxygen ) B Specific examples of the (meth)acrylic acid-isoborate'-residual acid diacetate include maleic acid di, di-butyl butyrate, diethyl itaconate, etc.; Specific examples of saturated multi-compounds are 'bicyclo[2.2.1]hept-2-ene, 5-methylcyclo[2.2.1]hept-2-ene, 5-ethylbicyclo[22]]heptan-2-ene, Mom bicyclo[2.2.1]hept-2-ene,% ethoxybicyclo[22丨]gg·2_ 5,6·-methoxybicyclo[2·2]]hept-2-ene, 5,6·di Oxybicyclo[) with diester phenylethyl carboxylic acid, m) enoic butyl acrylate acrylate - rna bis(cyclohexyl) oxime ethyl ester cycline bis 5-carbazide, -14 - (11 1338190 〕hept-2-ene, 5-tris-butoxycarbonylbicyclo[2.2.1]hept-2-enecyclohexyloxycarbonylbicyclo[2.2.]hept-2-ene, 5-phenyloxycarbonyl double 2.2. 1]hept-2-ene, 5,6-di(tertiarybutoxycarbonyl)bicyclo[]hept-2-ene, 5,6-di(cyclohexyloxycarbonyl)bicyclo[2.2.1]j Alkene, etc.; maleimide compound has N-phenyl maleic acid, N-benzyl maleimide, N-cyclohexyl-n-butene Diterpenoid N-amber quinone imino-3-pyrene quinone imide benzoate, N-succinyl-4-butyl succinimide butyrate, N-amber Imino-butenylene diimide hexanoate, N-succinimide-3-butanediamine propionate, N-(9-acridinyl) maleimide, etc. Specific examples of the styrene include styrene, α-methylbenzene, o-methylstyrene, m-methylstyrene, p-methylstyrene, p-styrene, etc.; specific examples of conjugated dienes In terms of 1, 3-butadiene, meta-diene, 2,3-dimethyl-1,3-butadiene, and the like. Further, specific examples of the monomer (a3) other than the above may be (meth)acrylonitrile, (meth)acrylamide, vinyl chloride, ethylene chloride, vinyl acetate or the like. Among the monomers (a 3 ), methacrylates, unsaturated compounds, styrenes, conjugated dienes, and the like are preferred, and in particular, tertiary butyl methacrylate, 2-methyl acrylate Cyclohexyl ester, methacrylic acid [5.2.].02'6]癸-8-yl, bicyclo[2.2.1]hept-2-ene, phenylethyl p-methoxystyrene, 1,3-butadiene Etc., relative to the copolymerization ring [2.2.1 η-2-imineamine, perylene. 6-cis-vinylidene methoxyisoamyl exemplified fork dipolycyclopropyl--* ΤΡΗ. di- ene , Sex and -15- (12) (12) 1338190 The solubility of the alkali developer is preferred. The above monomers (a 3 ) may be used singly or in combination of two or more. In the copolymer (A), the content rate of the repeating unit derived from the monomer (a 1 ) is preferably from 5 to 40% by weight, particularly preferably from 10 to 30% by weight, based on the total amount of the unit. When the content of the repeating unit is less than 5% by weight, the tendency of the obtained copolymer to be difficult to dissolve in the developing solution when developing is carried out, and the solubility of the alkali developing solution with respect to the obtained copolymer is more than 40% by weight. Will tend to become too big. Further, the content ratio of the repeating unit derived from the monomer (a2) is preferably from 1 to 7% by weight, particularly preferably from 20 to 60% by weight, based on the total weight of the unit. When the content of the repeating unit is less than 丨〇% by weight, the heat resistance or surface hardness of the resulting interlayer insulating film or microlens tends to decrease. When the content exceeds 70% by weight, the composition may be preserved. The stability is reduced. Further, the content ratio of the repeating unit derived from the monomer (a3) is preferably from 1 〇 to 7 〇% by weight, particularly preferably from 1 5 to 50% by weight, based on the total repeating unit. /〇. When the content of the repeating unit is less than 10% by weight, the storage stability of the composition tends to decrease. When the content exceeds 70% by weight, the copolymer obtained tends to be difficult to dissolve in the alkali developing solution during development. . Specific examples of the copolymer (A) are excellent methacrylic acid/methacrylic acid 3:4-epoxycyclohexyl/methylpropanoic acid tricyclo[5.2.1.02.6]癸-8-yl/styrene Copolymer 'methacrylic acid/acrylic acid 3,4-epoxycyclohexyl/methylidene glyceride tricyclic [5.2. 1 ·〇2 6]癸-8-yl/N·cyclohexyl maleimide / benzene-16- (13) (13) 1338190 ethylene copolymer, formazan acrylic acid / methacrylic acid 3, heart epoxy cyclohexyl / methacrylic acid tricyclo [5.2.〗. 02 6] 癸-8 - even / N-cyclohexanyl maleimide/styrene copolymer, methacrylic acid/methacrylic acid 3,4-epoxycyclohexyl/methacrylic acid tricyclic [5.2.丨.026]癸-8- Base / methacrylic acid 2 · hydroxyethyl _ / styrene copolymer, methacrylic acid / methacrylic acid 3,4-epoxycyclohexyl / methacrylic acid tricyclic, [5.2.1.026] 癸-8-based / A Lauryl styrene/styrene copolymer, methacrylic acid/methacrylic acid 3,4-epoxycyclohexyl/p-ethylene; epoxidized propyl ether/methacrylic acid lauryl methacrylate [5.2 · 1 . 〇2 6] 癸-8 · styrene/styrene copolymer, and the like. The polystyrene-equivalent weight average molecular weight of the copolymer (A) (hereinafter referred to as "Mw") is preferably 2,000 〜 〇〇, 〇〇〇 'more preferably 5, 〇〇 0 〜 50, 〇〇〇 . When the Mw of the copolymer (a) is less than 2,000, the development boundary may be insufficient. The residual film ratio of the coating film may decrease during development, and the pattern shape or heat resistance of the interlayer insulating film or microlens obtained may be impaired. On the other hand, if you exceed 〇〇, 〇〇〇, there will be a decrease in sensitivity or damage to the shape of the pattern. When the copolymer (A) having Mw is used as described above, development residue can be prevented from being developed, and a pattern of a predetermined shape can be easily formed. In the present invention, the copolymer (A) may be used singly or in combination of two or more. The copolymer (A) is a monomer (al), a monomer (a2) and a monomer (a3)' in a solvent, in the presence of a polymerization initiator, by a radical -17-(14) (14) ) 1338190 is made by polymerization. The solvent to be used in the production of the copolymer (A) may, for example, be the same as the organic solvent (hereinafter) described later, and may be an alcohol, an ethylene glycol alkyl ether or a glycol alkyl ether. Acetate, diethylene glycol alkyl ether, propylene glycol monoalkyl ether, propylene glycol alkyl ether acetate (however, the alkyl group has 1 or 2 carbon atoms), dipropylene glycol monoalkyl ether, other ethers , aromatic hydrocarbons, ketones, other esters, and the like. In the solvent, specific examples of the solvent other than the organic solvent (1), alcohol refers to methanol, ethanol, etc.; ethylene glycol alkyl ether refers to ethylene glycol monomethyl ether, ethylene glycol monoethyl Ethylene glycol alkyl ether acetate; ethylene glycol alkyl ether acetate, ethylene glycol methyl ether acetate, ethylene glycol ether ether, etc.; diethylene glycol alkyl ether type, diethylene glycol Monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol dimethyl ether, diethylene glycol diethyl ether, diethylene glycol ethyl methyl ether, etc.; propylene glycol monoalkyl ether type , propylene glycol monomethyl ether, propylene glycol monoethyl ether, etc.; propylene glycol alkyl ether acetate (but, the number of carbon atoms of the alkyl group) or 2.), propylene glycol methyl ether acetate, propylene glycol ethyl ether Acetate, etc. » Dipropylene glycol monoalkyl ethers, dipropylene glycol monomethyl ether, dipropylene glycol monoethyl ether, etc.; other ethers, tetrahydrofuran, dioxane, etc.: -18- (15) ( 15) 1338190 aromatic hydrocarbons are, toluene, xylene, etc.; ketones are, methyl ethyl ketone, cyclohexanone, 4-hydroxy-4-methyl-2-pentanone, etc.; Esters are, methyl acetate, ethyl acetate, n-propyl acetate, n-butyl acetate, ethyl hydroxyacetate, n-propyl glycolate, n-butyl glycolate, methyl methoxyacetate, methoxyacetate Ester, n-propyl methoxyacetate, n-butyl acetate, methyl ethoxyacetate, ethyl ethoxyacetate, n-propyl ethoxyacetate, n-butyl ethoxyacetate, methyl n-propoxyacetate, positive Ethylpropionate, n-propyl n-propoxyacetate, n-butyl n-propoxyacetate, methyl n-butoxyacetate, ethyl n-butoxide, n-propyl n-butoxide, n-butoxyacetate Ester, methyl lactate, ethyl lactate, n-propyl lactate, n-butyl lactate, methyl 3-hydroxypropionate, ethyl 3-hydroxypropionate, n-propyl 3-hydroxypropionate, 3-hydroxypropionic acid N-butyl ester, methyl 2-methoxypropionate, ethyl 2-methoxypropionate, n-propyl 2-methoxypropionate, n-butyl 2-methoxypropionate, methyl 2-ethoxypropionate Ethyl 2-ethoxypropionate, n-propyl 2-ethoxypropionate, n-butyl 2-ethoxypropionate, methyl 2-n-butoxypropionate, ethyl 2-n-butoxypropionate, 2-n-butoxypropionate n-propyl ester, 2-n-butoxypropionic acid positive Ester, methyl 3-methoxypropionate, ethyl 3-methoxypropionate, n-propyl 3-methoxypropionate, n-butyl 3-methoxypropionate, methyl 3-ethoxypropionate, 3 -ethyl ethoxypropionate, n-propyl 3-ethoxypropionate, n-butyl 3-ethoxypropionate, methyl 3-n-propoxypropionate, ethyl 3-n-propoxypropionate, 3- N-propyl propoxypropionate, n-butyl 3-propoxypropionate, methyl 3-n-butoxypropionate, ethyl 3-n-butoxypropionate, n-propyl 3-n-butoxypropionate, 3 - n-butyl n-butoxypropionate, methyl 2-hydroxy-2-methylpropionate, ethyl 2-hydroxy-2-methylpropionate, methyl 2-hydroxy-3-methylformate or the like. -19 - (16) (16) 1338190 Among these solvents, organic solvents (I) such as propylene glycol dialkyl ethers, propylene glycol ether acetates, dipropylene glycol diethers, dipropylene glycol alkyl ether acetates, etc. Ethylene glycol alkyl ether acetates, diethylene glycol alkyl ethers, propylene glycol alkyl ether acetates, etc., especially, propylene glycol dialkyl ethers, propylene glycol alkyl ether acetates (however, carbon atoms of alkyl groups) The number is 3 or 4.), and propylene glycol alkyl ether acetate (however, the number of carbon atoms of the alkyl group is 2 or 2) is preferable. These solvents may be used singly or in combination of two or more. In the present invention, the copolymer (A) is produced by polymerizing a solvent containing the organic solvent (1) to be described later, and the solution of the obtained copolymer (A) is preferably prepared by the composition of the linear radiation-sensitive resin composition. . Further, in the case of using a solvent other than the organic solvent (]) in the production of the copolymer (A), after the polymerization, the copolymer (A) is precipitated as a weak solvent, and then dissolved in the organic solvent (1). A method for preparing a linear resin composition with a radiation; after the polymerization, a solvent is replaced with an organic solvent (1), and a method for preparing a linear resin composition with a radiation sensitive agent can be employed. As the polymerization initiator to be used for the production of the copolymer (A), a known product of a radical polymerization initiator can be generally used. The above-mentioned radical polymerization initiator may, for example, be 2; 2 '-azobisisobutyronitrile, 2.2'-azobis-(2,4-dimethylvaleronitrile), 2,2'-azobis- An azo compound such as (4-methoxy-2.4-dimethylvaleronitrile): benzhydrin peroxide, lauryl peroxide, tertiary butyl peroxy pivalate (pivalate), 1 , 1'-bis-(tri-butylperoxy)cyclohexane, etc., organic -20- (17) (17) 1338190 oxide: and hydrogen peroxide, etc. The combination can also be used as a redox type initiator. These radical polymerization initiators can be used singly or in combination of two or more kinds. In the polymerization of the production of the copolymer (A), a molecular weight adjusting agent is used. In the foregoing molecular weight modifier, for example, a halogenated hydrocarbon such as chloroform or carbon tetrabromide: n-hexyl mercaptan 'n-octyl-thiol, n-dodecyl mercaptan 'secondary dodecyl mercaptan' Sulphuric acid (thi 0 g 1 yc 〇丨1 icacid ) and the like; dimethyl xanthate (xanthic) sulfide, diisopropyl xanthogen @二. sulfide, etc. xanthogen; onion oil Terpin(R), Q. Methylstyrene dimer, and the like. These molecular weight modifiers may be used alone or in combination of two or more. ~(Β)-sensitive radiation linear acid generator The sensitized radiation linear acid generator of the present invention is formed by the composition of the radiation 吏13⁄4 (hereinafter referred to as "(Β) acid generator"). (B) The acid generator is not particularly limited insofar as it has the above-described characteristics. However, the preferred (B) acid generator of the present invention contains ruthenium, 2 - brominated diazide sulfonate. In the case of the 1,2-cai-2 salt sulfonic acid vinegar, for example, an acidic compound or an alcoholic compound (hereinafter, these compounds are referred to as "phenolic compounds"). Condensate with,], 2-naphthoquinonediazidesulfonic acid halide, -21 - (18) (18) 1338190 The 1,2-naphthoquinonediazidesulfonic acid halide is 1,2 - Naphthoquinonediazidesulfonic acid chloride is preferred. Examples of the phenolic compound include, for example, trishydroxydiphenyl ketones, tetrahydroxydiphenyl ketones, pentahydroxydiphenyl ketones, hexahydroxydiphenyl ketones, poly(hydroxyphenyl) chains. Alkanes and the like. Specific examples of such compounds include trishydroxydiphenyl ketones, 2,3,4-trihydroxydiphenyl ketone, 2,4,6-trihydroxydiphenyl ketone, etc.; tetrahydroxydiphenyl Ketones are, 2,2',4,4'-tetrahydroxydibenzophenone, 2,3,4,3'-tetrahydroxydiphenyl ketone, 2,3,4,4'-tetrahydroxy Phenyl ketone, 2,3,4,2 '-tetrahydroxy-4, methyldiphenyl ketone, 2,3,4,4 '-tetrahydroxy-3 '-methoxydiphenyl ketone, etc.; Diphenyl ketones are, 2,3,4,2',6'-pentahydroxydiphenyl ketone; hexahydrodiphenyl ketones are available, 2,4,6,3',4', 5'-hexahydroxydiphenyl ketone, 3,4,5,3',4':5'-hexahydroxydiphenyl ketone, etc.; poly(hydroxyphenyl)alkanes can be exemplified by 2-methyl -2- ( 2,4-dihydroxyphenyl)-4-( 4-hydroxyphenyl)-7-hydroxychroman, 2-[double { ( 5-i-propyl-4-hydroxy-2-methyl) Phenyl hydrazone _]phenol, I -[ 1-[ 3-{]-(4-hydroxyphenyl)-1-methylethyl}-4,6-dihydroxyphenyl]-1-yl Benzyl]-3-[1-[3-{1-(4-hydroxyphenyl)-]-methylethyl}-4,6-dihydroxyphenyl]-1-methylethyl]benzene ,4,6-bis[1-(4-phenyl)-1-methylethyl]-],3-dihydroxybenzene bis(2,4-dihydroxyphenyl) Alkane, bis(4-hydroxyphenyl)methane, tris(4-hydroxyphenylhydrazine)methane, 1,1,1-tris(4-hydroxyphenyl)ethane, bis(2,3,4-trihydroxybenzene ——) methane, 2,2-bis(2,3,4-trihydroxyphenyl)propane, hydrazine, 〗 〖3-three-22-(19) 1338190 (2,5-dimethylidene-4-hydroxyl Phenyl)-3-phenylene propane, 4,4,-[1-[4-{]-(4-hydroxyphenyl)-]-methylethylphosphonium phenyl]ethylidene bisphenol, double ( 2,5 -Dimethyl-4 hydroxyphenyl)-2-hydroxyphenylmethane, 3,3,3 ',3 '-tetramethyl-1,1 '-spirobifluorene (indene) · 5 6,6,5 ',6,7,-hexanol, 2,2,4-trimethyl-7,2',4'-trihydroxyflavan (fUvan), and the like. The condensation reaction of a phenolic compound or the like with a 1,2-naphthoquinonediazidesulfonic acid halide can be carried out in the absence of a solvent or a solvent in the presence of a catalyst. The solvent may, for example, be a ketone, a cyclic ether or the like, more specifically, acetone, methyl ethyl ketone, methyl isoamyl ketone, methyl isobutyl ketone, 1,4-dioxin. Alkane, 1,3,5-trioxane, and the like. In the case of using a solvent, the amount thereof is preferably from 10 to 500 parts by weight based on the total of the phenol compound and the like, and the total amount of the 2-naphthoquinonedihydrofluorene halide. Further, an experimental compound can be used in the above-mentioned catalyst aspect. In the case of the above-mentioned inert compound, for example, 'triethylamine' tetrachloromethane chloride, tetramethylammonium bromide, pyridine or the like is preferred. The amount of the catalyst used is preferably 1 mol% or more of the 1,2-naphthoquinonediazidesulfonic acid halide 1 mol, more preferably ??? In the condition of the condensation reaction of an inert compound with a 1,2-naphthoquinonediazidesulfonic acid halide, the reaction temperature is preferably 0 to 5 (rc, more preferably 〇~40 t, particularly preferably 1 〇). ~3 5 °c, reaction time, preferably 〇·5~1 〇 hours, 3 hours is more preferably 1~5 hours'. After the condensation reaction, the insoluble fraction is filtered out and the liquid is put into a large amount. The reaction product was precipitated in 1 to 30% of the diluted hydrochloric acid aqueous solution. After -23-(20) (20)1338190, the precipitate was filtered, washed with water to make the filtrate neutral, and dried. In the present invention, the (B) acid generator ' can be used singly or in combination of two or more. (B) The amount of the acid generator used, relative to (A) The alkali-soluble resin is 100 parts by weight, preferably 5 to 1 part by weight, more preferably 0 to 50 parts by weight. (B) The acid generator is used in an amount of less than 5 parts by weight, relative to the alkali developer The difference in solubility between the exposed portion and the unexposed portion becomes small, making pattern formation difficult, and heat resistance or solvent resistance of the resulting interlayer insulating film or microlens If there is a decrease in the amount of 〇〇 〇〇, the solubility of the alkali developing solution in the exposed portion may be lowered, and development may be difficult. - Other additives - the sensitive radiation linear resin composition of the present invention, The (A) alkali-soluble resin and the (B) acid generator are prepared by dissolving the composition in the organic solvent (C) described later, but may further contain a heat-sensitive acid generator if necessary, and have at least one polymerizable property. Unsaturated bonded polymerizable compound (hereinafter referred to as "polymerizable compound"), (A) epoxy resin other than alkali-soluble resin (hereinafter referred to as "other epoxy resin"), surfactant Other additives such as an adhesion promoter. The heat-sensitive acid generator may have a component which generates an acid by heating, and further improves the heat resistance or hardness of the interlayer insulating film and the microlens. (21) (21) 1338190 The thermosensitive acid generator may, for example, be an onium salt, a benzothiazolium salt, an ammonium salt or a phosphonium salt, preferably a phosphonium salt or a benzothiazole iron salt. Salt square Specific examples include, for example, an alkyl sulfonium salt, a benzyl sulfonium salt, a dibenzyl sulfonium salt, a substituted benzyl sulfonium salt, etc. More specifically, the alkyl sulfonium salt has a 4-acetyl phenyl phenyl group. Hexafluoroantimonate, 4-ethoxycarbonyl phenyl dimethyl hexafluoroarsenate, dimethyl-4 -(benzyloxycarbonyloxy)phenyl hexafluoroantimonate, dimethyl 4-(benzylideneoxy)phenylphosphonium hexafluoroantimonate, dimethyl-4-(benzylideneoxy)phenylphosphonium hexafluoroarsenate, dimethyl-3-chloro- 4-acetoxyphenyl hexafluoroantimonate; benzyl sulfonium salt benzyl-4-hydroxyphenylmethyl hexafluoroantimonate, benzyl-4-hydroxyphenylmethyl hydrazine Hexafluorophosphate, benzyl-4-acetoxyphenylmethyl hexafluoroantimonate, benzyl-4-methoxyphenylmethyl hexafluoroantimonate, benzyl-2-methyl 4-hydroxyphenylmethyl hydrazine hexafluoroantimonate, benzyl-3-chloro-4-' phenylmethyl hydrazine hexafluoroarsenate, etc.; dibenzyl sulfonium salt has dibenzyl- 4-hydroxyphenylphosphonium hexafluoroantimonate, dibenzyl-4-hydroxyphenylphosphonium hexafluorophosphate, diyl-4-ethoxycarbonylphenylphosphonium hexafluoroantimonate, dibenzyl- 4-methoxyphenyl fluorene Fluoroantimonate, dibenzyl-3-chloro-4-phenylpyridinium hexafluoroarsenate, dibenzyl-3-methyl-4-hydroxy-5-tertiary butylphenylphosphonium hexafluoroantimonate Acid salt, benzyl-4-methoxybenzyl-4-hydroxyphenylphosphonium hexafluorophosphate, etc.; substituted benzyl sulfonium salt, 4-methoxybenzyl-4-hydroxyphenylmethylhydrazine Hexafluoroantimonate, 4-chlorobenzyl-4-hydroxyphenylmethylphosphonium hexafluoroantimonate, 4-nitrobenzyl-4-hydroxyphenylmethylphosphonium hexafluoroantimonate, 4-chlorobenzyl 4-hydroxyphenylmethylphosphonium hexafluorophosphate, 4-nitrobenzyl-3-methyl-4-hydroxyphenylmethylphosphonium hexafluoro-25- (22) (22) 1338190 citrate, 3,5-Dichlorobenzyl-4-hydroxyphenylmethylphosphonium hexafluoroantimonate, 2-chlorobenzyl-3-chloro-4-hydroxyphenylmethylphosphonium hexafluoroantimonate, and the like. Specific examples of the above benzothiazolium salt include 3-benzylbenzothiazolium hexafluoroantimonate, 3-benzyl benzothiazole hexafluorophosphate, and 3-benzylbenzothiazole iron IV. Fluoroborate, 3-(4-carbobenzyl)benzothiazole hexafluoroantimonate, 3-benzyl-2-methylsulfonylbenzothiazolium hexafluoroantimonate, 3-benzylhydrazine -5-Benzylbenzothiazole iron salt such as chlorobenzothiazolyl hexafluoroantimonate. Among the sensible acid generators, especially 4-ethoxymethoxyphenyl dimethyl hexafluoroarsenate, benzyl-4-hydroxyphenylmethyl hexafluoroantimonate, benzyl-4 - Ethyloxyphenylmethyl hexafluoroantimonate, dibenzyl-4-hydroxyphenylphosphonium hexafluoroantimonate, 3-benzylbenzothiazolium hexafluoroantimonate is preferred. Moreover, the preferred heat-sensitive acid generator sales agent may, for example, be San-Aid SI-L85, the same as SI-L110, the same SI-L145, the same SI-L150, and the same SI-L1 60 (Sanxin Chemical) Industrial company system). The above-mentioned thermosensitive acid generators may be used singly or in combination of two or more. The amount of the heat-sensitive acid generator to be used is preferably 20 parts by weight or less, more preferably 5 parts by weight or less based on 1 part by weight of the (A) alkali-soluble resin. When the amount of the heat-sensitive acid generator used exceeds 20 parts by weight, the precipitates in the coating film forming step are liable to be precipitated, which may cause an obstacle in the formation of the coating film. In terms of the polymerizable compound, for example, a monofunctional (meth) acrylate type "bifunctional" (meth) acrylate, a trifunctional or higher (meth) acrylate or the like is preferable. -26- (23) (23) 1338190 The aforementioned monofunctional (methyl 3S) acrylate may, for example, be 2-hydroxyethyl (meth) acrylate, carbitol (meth) acrylate, (methyl Isoborane acrylate, 3-methoxybutyl (meth) acrylate, 2-(meth) propylene oxirane-2-hydroxyl phthalate, and the like. Further, in the case of the monofunctional (meth) acrylate-based commercial products, for example, A r ο ni X Μ - 1 0 1, the same Μ - 1 1 1, the same Μ - 1 1 4 (above, Kawasaki TC-110S, the same as TC-120S (above, Nippon Kayaku Co., Ltd.), Biscoat 158, 23 (above, Osaka Organic Chemical Industry Co., Ltd.)). The above-mentioned bifunctional (meth) acrylate may, for example, be ethylene glycol di(meth)acrylate or 1,6-hexanediol di(meth)acrylate ' 1,9-nonanediol II ( Methyl) acrylate, tetraethylene glycol (meth) acrylate 'polypropylene glycol di(meth) acrylate, bisphenoxyethanol burial di(meth) acrylate 'bisphenoxyethanol oxime (methyl) For example, Aronix M-210, M-240, and M-6200 (above, manufactured by Toagosei Co., Ltd.) can be exemplified as the acryl-ester or the like. HDDA, similar to HX-22, R-604 (above 'Nippon Chemical Co., Ltd.'), BiSC0at 260, 312, 335HP (above, Osaka Organic Chemical Industry Co., Ltd.). The above-mentioned trifunctional or higher (meth) acrylate may, for example, be dimethylolpropane tri(meth) acrylate or neopentyl alcohol tris(methyl) propyl sulphuric acid vinegar 'three ((methyl) Acetylene oxime ethyl) phosphate vinegar, neopentyltetrakis(methyl)propionic acid cool 'dipentaerythritol penta(methyl)propane-27- (24) (24)1338190 enoate, two For example, Aronix M-3〇9' and M-4 may be mentioned as a "selling product" of such a trifunctional or higher (meth) acrylate. 0 0 '同同M·405 ' 同Μ - 4 5 0,同Μ - 7 1 0 0 ' 同Μ - 8 0 3 0,同Μ - 8 0 6 0 (above 'East Asia Synthetic Company))' KAYARAD ΤΜΡΤΑ 'With DPHA' with DPCA-20, with DPCA-30, with DPCA-60, with DPCA-] 2〇 (above, manufactured by Nippon Kayaku Co., Ltd.) ' B isc 〇at 2 9 5, same as 3 0 0 '3 6 0 'With GPT, the same as 3PA ' (above, Osaka Organic Chemical Industry Co., Ltd.) and so on. Among these polymerizable compounds, a trifunctional or higher (meth) acrylate is preferred, and trishydroxypropane tris((meth) acrylate 'neopentitol tetrakis(meth) acrylate, two The pentaerythritol hexa(meth) acrylate is particularly preferably used alone or in combination of two or more. The polymerizable compound is preferably used in an amount of 100 parts by weight based on (A) the alkali-soluble resin. It is 50 parts by weight or less, more preferably 30 parts by weight or less. The polymerizable compound is used in an amount of more than 5 parts by weight, and there is a film splitting in the coating film. The sensitive radiation linear resin composition of the present invention contains The polymerizable compound can improve the heat resistance and surface hardness of the obtained interlayer insulating film and microlens. In the case of other epoxy resins, (A) is not particularly limited as long as it is compatible with the alkali-soluble resin. Among them, bisphenol A type epoxy resin, aldehyde lacquer type epoxy resin, cresol novolac lacquer type epoxy resin, ring • 28- (25) (25) 1338190 aliphatic epoxy resin, ring Oxypropyl acrylate epoxy resin, Oxypropyl propyl type epoxy resin, heterocyclic epoxy resin, (meth)acrylic acid epoxy propyl copolymer, etc., more preferably bisphenol A type epoxy resin, cresol novolac lacquer type ring Oxygen resin, epoxy propyl ester type ring gas resin, etc. The amount of the other epoxy resin used is preferably 30 parts by weight or less with respect to (A) the alkali-soluble resin 100 parts by weight. When the amount used exceeds 3 〇m, the uniformity of the film thickness of the coating film is insufficient. The sensitive radiation linear resin composition of the present invention may contain other epoxy resins, and the resulting interlayer insulating film and microlens may be further improved. Heat resistance, surface hardness, etc. The surfactant has a function of improving coatability and a surfactant. For example, a fluorine-based surfactant, a polysiloxane surfactant, and a nonionic surfactant In the specific example of the fluorine-based surfactant, for example, '丨,1,2,2-tetrafluoro-n-octyl (1; 1; 2; 2-tetrafluoropropyl) ether can be exemplified, 1,,],2,2-tetrafluoro-n-octylhexyl ether, octaethylene glycol di(1,1,2 2_tetrafluoro-n-yl) acid hexaethylene glycol (151,2,2,3,3_hexafluoro-n-pentamethylene) ether, eight propylene - (I, 1, 2, 2 - four gas positive Butyl)ether, hexapropanediol di( ,,,-'3,3-octa-s-n-pentyl), whole gas, n-dodecyl sulphate, 1,1 ' 2 ' 2,8 ' 8 ' 9, 9,1 0 , 1 0 -decafluoro-n-decyl,], fluorene, 2: 2,3,3 _ hexafluoro-n-decyl, etc., may be exemplified as sodium fluoroalkylbenzenesulfonate; fluoroalkyl Oxyethylene ethers 'Yaohua fluorocarbon oxime ammonium' fluoroalkyl polyoxyethylene ethers, perfluoroalkyl poly(ethanol): perfluoroalkane alkoxylates; fluoroalkyl esters, etc. -29 (26) (26) 1338190 In addition, BM-1000, BM-1100 (above, BM Chemie), Megafuck F142D, and F172, the same F, may be mentioned as a product of such a fluorine-based surfactant. ]73, with F183, with F]78, with F191, with F471 (above, manufactured by Dainippon Ink Chemical Industry Co., Ltd.), Fulorade FC-170C, with FC-171, with FC-430, with FC-431 (above, Sumitomo 3 Μ company system), S u fu r ο n S - 1 1 2, same as S - 1 1 3, same as S-131' with S-141, with S-145, with S-382 Same as SC-101, same as SC-102, with SC-103, with SC-104, with SC-105, with SC-106 (Asahi Glass), EF Top EF30], with 303, with 352 (New Akita) Chemical company) SH-28PA, same -190, same -193'SZ-6032, SF-8428, DC-57, same -190 (above, Toray
Dowcorning聚砂氧公司製）等。 前述聚矽氧系界面活性劑方面，市販品有，可例舉例 如 ’ Toray siliconeDC3PA，同 DC7PA，同 SH11PA，同 SH21PA，同 SH28PA，同 SH2 9PA -同 SH3 0PA > 同 FS-1265-300 (以上，東麗 Dow corning聚砂氧公司製）， TSF-4300，同-4440，同-4445，同-4446，同-4452，同-4460 (以上，GE東芝聚矽氧公司製）等。 前述非離子系界面活性劑方面，可使用例如，聚氧化 乙烯月桂基醚，聚氧化乙烯硬脂醚，聚氧化乙烯油醚等之 聚氧化乙烯烷基醚類；聚氧化乙烯正辛基苯基醚，聚氧化 乙烯壬基苯基醚等之聚氧化乙烯芳基醚類；聚氧化乙烯二 月桂酸酯，聚氧化乙烯二硬脂酸酯等之聚氧化乙烯二烷酯 類等；（甲基）丙烯酸系共聚物Polyf]OW-No.5 7, 9 5 (共 -30- (27) (27)1338190 榮社化學公司製）等。 該等之界面活性劑可單獨或組合2種以上使用。 界面活性劑之使用量’相對於（A )鹼可溶性樹脂 1 0 〇重量份，較佳爲5重童份以下，更佳爲2重量份以下 。界面活性劑之使用量超過5重量份，在塗膜會有膜皸裂 易於產生之傾向。 前述黏接助劑，具有與基體之黏接性進而提高之作用 之成分。 黏接助劑方面，以例如羧基，甲基丙烯醯基，異氰酸 酯基，環氧基等之具有反應性取代基之矽烷偶合劑較佳。 前述官能性矽烷偶合劑方面，可例舉例如三甲氧基單 矽烷基苯甲酸，7 -甲基丙烯醯氧丙基三甲氧基矽烷， 乙烯三乙醯氧基矽烷，乙烯三甲氧基矽烷，r -異氰酸酯 丙基三乙氧基矽烷，7 -環氧丙氧基丙基三甲氧基矽烷， /3 - ( 3,4-環氧基環己基）乙基三甲氧基矽烷等。i黏接助 劑之使用量，相對於（A )鹼可溶性樹脂1 0 〇重量份’較 佳爲2 0重量份以下，更佳爲1 〇重量份以下。黏接助劑之 使用量超過2 0重量份時’顯影時會有顯影殘留產生之傾 向0 一（C )有機溶劑- 本發明中有機溶劑含有’前述式（1 )所示之化合物 (以下，稱爲「有機溶劑（1 )」。）。 以下，有機溶劑（1 )中’ n= 1時，（1 ) R1爲甲_或 -31 - (28) (28)1338190 乙基，R2爲碳原子數1〜4之烷基或-CO-R3 (在此，R3爲 碳原子數2〜4之烷基）稱爲「有機溶劑（I- 1 )」，（2 )R1表示甲基羰基，R2表示碳原子數3〜4之烷基或-CO-R4 (在此，R4爲碳原子數1〜4之烷基）稱爲「有機溶劑 (1 - 2 )」，（3 ) R 1表示碳原子數3〜4之烷基或-C Ο - R3 (在此，R3表示碳原子數2〜4之烷基），R2表示碳原子 數1〜4之烷基或-CO-R4 (在此，R4爲碳原子數1〜4之 烷基）稱爲「有機溶劑（1 -3 )」，n = 2之稱爲「有機溶 劑（1 -4 )」。 有機溶劑（】）方面，該等中以有機溶劑（1 - 4 )特佳 〇 有機溶劑（]-1 )方面， 丙二醇二烷醚類：（R2爲碳原子數1〜4之烷基）係 指，例如1，2-二甲氧丙烷，1-甲氧-2-乙氧丙烷，1-甲氧-2-正丙氧丙烷，1-甲氧-2-i-丙氧丙烷，]-甲氧-2-正丁氧丙 烷，1 -甲氧-2 - i - 丁氧丙烷，1 -甲氧-2 -三級丁氧丙烷，1 -乙 氧-2 -甲氧丙烷，1，2 -二乙氧丙烷，]-乙氧-2 -正丙氧丙烷 ，卜乙氧-2-i-丙氧丙烷，1-乙氧-2-正丁氧丙烷，]-乙 氧-2 - i - 丁氧丙烷，1 -乙氧-2 -三級丁氧丙烷等； 丙二醇烷醚酯類：（R2爲-CO-R3 )係指，例如丙酸 1 -甲基-2 -甲氧乙酯，丙酸1 -甲基-2 -乙氧乙酯，丁酸1 -甲 基-2-甲氧乙酯，丁酸]-甲基-2-乙氧乙酯，異丁酸丨-甲 基-2-甲氧乙酯，異丁酸1-甲基-2-乙氧乙酯，戊酸1-甲 基-2-甲氧乙酯，戊酸1-甲基-2-乙氧乙酯，3-甲基丁酸Ι α- (29) (29)1338190 甲基-2-甲氧乙酯，3-甲基丁酸-1-甲基-2-乙氧乙酯，2,2-二甲基丙酸〗-甲基-2-甲氧乙酯，2,2-二甲基丙酸1-甲基-2 -乙氧乙酯等。 有機溶劑（1 - 2 )方面， 丙二醇烷醚乙酸酯類（R2爲碳原子數3〜4之烷基） 係指，例如乙酸2-正丙氧丙酯，乙酸2-i-丙氧丙酯，乙酸 2-正丁氧丙酯，乙酸2-i-丁氧丙酯，乙酸2-三級丁氧丙酯 等； 丙二醇二酯類（R2爲-CO-R4 )可例舉，例如乙酸2-甲基羰氧丙酯，乙酸 2 -乙基羰氧丙酯，乙酸 2 -正丙基羰 氧丙酯，乙酸2-i -丙基羰氧丙酯，乙酸2 -正丁基羰氧丙酯 ，乙酸2 - i - 丁基羰氧丙酯，乙酸：2 -三級丁基羰氧丙酯等 〇 有機溶劑（1-3 )方面， 丙二醇二烷醚類（R 1爲碳原子數3〜4之烷基，R2爲 碳原子數1〜4之烷越）係指，例如1 -正丙氧-2 -甲氧丙烷 ，卜正丙氧· 2 -乙氧丙烷，],2 -二-正丙氧丙烷，丨-正丙氧· 2 - i -丙氧丙烷，1 -正丙氧-2 -正丁氧丙烷，丨-正-丙氧-2 - i - 丁 氧丙烷，1-正丙氧-2-t-丁氧丙烷， 1 - i -丙氧-2 -甲氧丙烷，]-i -丙氧-2 -乙氧丙烷，]-i -丙 氧-2 -正丙氧丙烷，1，2 -二-1 -丙氧丙烷，1 - i -丙氧-2 -正丁 氧丙烷，1 - i -丙氧-2 - i - 丁氧丙烷，1 - i -丙氧-2 -三級丁氧丙 烷，1 -正丁氧-2 -甲氧丙烷，1 -正丁氧-2 -乙氧丙烷，1 -正 丁氧-2 -正丙氧丙烷，]-正丁氧-2 - i -丙氧丙烷，1，2 -二-正 -33- (30) (30)1338190 丁氧丙烷，1 -正丁氧-2-i-丁氧丙烷，1 -正丁氧-2-三級丁氧 丙烷， 1 - i - 丁氧-2 -甲氧丙烷，1 - i - 丁氧-2 -乙氧丙烷，1 - i - 丁 氧-2-正丙氣丙烷，Ι-i-丁氧-2-i-丙氧丙烷，Ι-i-丁氧-2-正 丁氧丙烷，1,2-二-1-丁氧丙烷，Ι-i-丁氧-2-三級丁氧丙烷 > 三級丁氧-2-甲氧丙烷，1-三級丁氧-2-乙氧丙烷，1-三級丁氧-2-正丙氧丙烷，1-三級丁氣-2-1-丙氧丙烷，1-三 級丁氧-2-正丁氧丙烷，1-三級丁氧-2-i-丁氧丙烷，1，2-二-三級丁氧丙烷等； 丙二醇烷醚酯類（R1爲碳原子數3〜4之烷基，R2 爲-CO-R4，或R1爲-CO-R3，R2爲碳原子數1〜4之烷基 )係指，例如 乙酸1-甲基-2 -正丙氧乙酯，乙酸1-甲基- 2- i-丙氧乙 酯，乙酸1-甲基-2-正丁氧乙酯，乙酸1-甲基-2-i-丁氧乙 酯，乙酸1 -甲基-2-三級丁氧乙酯， 丙酸2 -甲氧丙酯，丙酸2 -乙氧丙酯，丙酸2 -正丙氧 丙酯，丙酸2 - i -丙氧丙酯，丙酸2 -正丁氧丙酯，丙酸2 - i -丁氧丙酯，丙酸2-三級丁氧丙酯， 丙酸1-甲基-2-正丙氧乙酯，丙酸2-i-丙氧-1-甲基乙 酯，丙酸2 -正丁氣-]-甲菡乙酯，丙酸2 - i - 丁氧-1 -甲基乙 酯，丙酸2 -三級丁氧-1 -甲基乙酯， 丁酸2-甲氧丙酯，丁酸2-乙氧丙基酯，丁酸2-正丙 氧丙酯，丁酸 2 - i -丙氧丙酯，丁酸 2 -正丁氧丙酯，丁酸 -34 - (31) (31)1338190 2 - i - 丁氧丙酯，丁酸2 -三級丁氧丙酯， 丁酸1-甲基-2-正丙氧乙酯，丁酸甲基-2-i-丙氧乙 酯，丁酸1 -甲基-2-正丁氧乙酯，丁酸1-甲基-2-i-丁氧乙 酯，丁酸1 -甲越-2-t-丁氣乙酯， 異丁酸2 -甲氧丙酯，異丁酸2 -乙氧.丙酯，異丁酸2-正丙氧丙酯，異丁酸2-i-丙氧丙酯，異丁酸2-正丁氧丙酯 ，異丁酸2 - i - 丁氧丙酯，異丁酸2 -三級丁氧丙酯， 異丁酸卜甲基· -2-正丙氧乙基，異丁酸1-甲基-2-i-丙 氧乙基，異丁酸1-甲基-2-正丁氧乙酯，異丁酸1-甲基- 2-i-丁氧乙酯，異丁酸I-甲基-2-三級丁氧乙酯， 戊酸2-甲氧丙酯，戊酸2-乙氧丙酯，戊酸2-正丙氧 丙酯，戊酸2-i-丙氣丙酯，戊酸2-正丁氧丙酯，戊酸2-i-丁氧丙酯，戊酸2-三級丁氧丙酯， 戊酸1-甲基-2-正丙氧乙酯，戊酸1-甲基-2-i-丙氧乙 酯，戊酸1-甲基· -2-正丁氧乙酯，戊酸]-甲莲-2-ί-丁氧乙 酯，戊酸】-甲基-2 -三級丁氧乙酯， 3 -甲基丁酸2 -甲氧丙酯，3 -甲基丁酸2 -乙氧丙酯，3-甲基丁酸2-正丙氧丙酯，3-甲基丁酸2-i-丙氧丙酯，3·甲 基丁酸2 -正丁氧丙基，3 -甲基丁酸2 - i - 丁氧丙基，3 -甲甚 丁酸2-t-丁氧丙基， 3-甲基丁酸1-甲基-2-正丙氧乙酯，3-甲基丁酸]-甲 基-2-i-丙氧乙酯，3-甲基丁酸1-甲基-2-正丁氧乙酯，3-甲基丁酸1 -甲基-2 - i - 丁氧乙酯，3 -甲基丁酸]-甲基-2 -三 級丁氧乙酯， -35 - (32) (32)1338190 2，2 -二甲基丙酸2 -甲氧丙酯，2,2 -二甲基丙酸2 -乙氧 丙酯，2，2 -二甲基丙酸2 -正丙氧丙酯，2，2 -二甲基丙酸： 2-i-丙氧丙酯，2,2-二甲基丙酸：2-正丁氧丙酯，2,2-二甲 基丙酸2 - i - 丁氧丙酯，2,2 -二φ蕋丙酸2 -三級丁氣丙基酯 2 : 2 -二甲基丙酸1 -甲基-2 -正丙氧乙酯，2，2 -二甲基丙 酸1 -甲基-2-i-丙氧乙酯，2,2-二甲基丙酸1-甲基-2-正丁 氧乙酯，2,2-二甲基丙酸1-甲基-2-i-丁氧乙酯，2,2-二甲 基丙酸1 -甲基· 2 - Η級丁氧乙酯等； 丙二醇二酯類（R1爲-CO-R3，R2爲-CO-R4 )係指， 例如 丙酸2 -甲基羰氧丙酯，丙酸 2 -乙基羰氧丙酯，丙酸 2 -正丙基羰氧丙酯，丙酸2 - i -丙基羰氧丙酯，丙酸2 -正丁 基羰氧丙酯，丙酸2 - i - 丁基羰氣丙酯，丙酸2 -三級丁基羰 氧丙酯，丁酸2 -甲基羰氧丙酯，丁酸2 -乙基羰氧丙酯， 丁酸2-正丙基羰氧丙酯，丁酸2-!-丙基羰氧丙酯，丁酸 2 -正丁基羰氧丙酯，丁酸2 - i - 丁基羰氧丙酯，丁酸2 -三級 丁基羰氧丙酯， 異丁酸2 -甲基羰氧丙酯，異丁酸2 -乙基羰氧丙酯， 異丁酸2-正丙基羰氧丙酯，異丁酸2-i-丙基羰氧丙酯，異 丁酸2-正丁基羰氣丙酯，異丁酸2-】-丁甚羰氧丙酯，異丁 酸2 -三級丁基羰氧丙酯， 戊酸2-甲基羰氧丙酯，戊酸2 -乙基羰氧丙酯，戊酸 2-正丙基羰氧丙酯，戊酸2-i-丙基羰氣丙酯，戊酸2-正丁 -36- (33) (33)1338190 基羰氣丙酯，戊酸2-i-丁基羰氧丙酯，戊酸2-三級丁基羰 氧丙酯， 3 -甲基丁酸2 -甲基羰氧丙酯，3 -甲基丁酸2 -乙基羰氧 丙酯，3 -甲基丁酸2 -正丙基羰氣丙酯，3 -甲丛丁酸2 - i -丙 基羰氣丙酯，3 -甲基丁酸2 -正丁基羰氧丙酯，。3 -甲基丁 酸2-i-丁基羰氣丙酯，3-甲基丁酸2-三級丁基羰氣丙酯， 2,2 -二甲基丙酸2 -甲基羰氧丙酯，2，2 -二甲基丙酸2 -乙基羰氧丙酯，2,2-二甲基丙酸2-正丙基羰氧丙酯，2,2-二甲基丙酸2-i-丙®羰氧丙酯，2,2-二甲基丙酸2-正丁基 羰氧丙酯，2,2-二甲基丙酸2-i-丁基羰氧丙酯，2,2-二甲 基丙酸2 -三級丁基羰氧丙酯等。 有機溶劑（1-4)方面， 二丙二醇二烷醚類可例舉，例如， 1 -(】-甲S - 2 -甲氧乙氧）-2 -甲氧丙烷，1 - ( 1 -甲基-2-甲氧乙氧）-2 -乙氧丙烷，1-(1-甲基--2-甲氧乙氧）-2-正丙氧丙烷，]-(1 -甲基-2 -甲氧乙氧）-2 - i -丙氧丙烷，1 -(1-甲基-2-甲氧乙氧）-2-正丁氧丙烷，b(l-甲基-2-甲 氧乙氧）-2-i-丁氧丙烷，1-(]-甲基-2-甲氧乙氧）-2-三 級丁氧丙烷， 1 -乙氧-2- ( 2-甲氧丙氧）丙烷，1 -正丙氧-2- ( 2-甲氧 丙氧）丙烷，1 - i -丙氧-2 - ( 2 -甲氧丙氧） 丙烷，1 -正丁 氧-2- ( 2-甲氧丙氧）丙烷，Ι-i-丁氧-2- ( 2-甲氧丙氧）丙 烷，】-三級丁氧-2- ( 2-甲氧丙氧）丙烷， 1-(1-甲基-2-乙氣乙氧）-2-乙氣丙烷，〗-(：1-甲基- -37- (34) (34)1338190 2-乙氧乙氧）-2-正丙氧丙烷，1-(】-甲基-2-乙氧乙氧）-2-i-丙氧丙烷，]-(1-甲基-2-乙氧乙氧）-2-正丁氧丙烷， 1- ( 1-甲基-2-乙氧乙氧）-2-i-丁氧丙烷，1- ( ：!-甲基-2-乙 氧乙氧）-2-三級丁氧丙烷， 1-正丙氧-2- ( 2-乙氧丙氧）丙烷，Ι-i-丙氧-2- ( 2·乙 氧丙氧）丙烷，〗-正丁氧-2- ( 2-乙氧丙氧）丙烷，Ι-i-丁 氧-2- ( 2-乙氧丙氧）丙烷，1 -三級丁氧-2-(乙氧丙氧） 丙烷， 1- ( 1-甲基-2-正丙氧乙氧）-2_正丙氧丙烷，]-(1-甲 基-2-正丙氧乙氧）-2-i-丙氧丙烷，1- ( 1-甲基-2-正丙氧 乙氧）-2-正丁氧丙烷，]-(]-甲基-2-正丙氧乙氧）-2-!- 丁氧丙烷，1- ( 1-甲甚-2-正丙氧乙氧）-2-三級丁氧丙烷 ， bi-丙氧-2- ( 2-正丙氧丙氧）丙烷，丨-正丁氧-2- ( 2-正丙氧丙氧）丙烷，】-i - 丁氧-2 - ( 2 -正-丙氧丙氧）丙烷 ，1-三級丁氧-2- ( 2-正丙氧丙氧）丙烷， 卜（卜甲基- 2_i-丙氧乙氧）-2-卜丙氧丙烷，]-(卜甲 基- 2-1-丙氧乙氧）-2-正丁氧丙烷，1 - ( 1-甲基- 2-N丙氧乙 氧）-2 - i - 丁氧丙烷，1 -(]-甲基-2 - i -丙氧乙氧）-2 -三級丁 氧丙烷， 1-正丁氧-2- ( 2-i-丙氧丙氧）丙烷，]-i-丁氧-2- ( 2-i-丙氧丙氧基）丙烷，1-三級丁氧-2- ( 2-i-丙氧丙氧）丙 烷，1-(丨-甲基-2-正丁氧乙氧）-2-正丁氧丙烷， 1 -(]-甲基-2 -正丁氧乙氧）-2 - i - 丁氧丙烷，：!-(丨-甲 -38- (35) 1338190 蕋-2-i-丁氧乙氧）-2-三級丁氧丙烷，1 -i-丁氧-2- ( 2-正丁 氧丙氧）丙烷，]-三級丁氧-2- ( 2-正丁氧丙氧）丙烷， (丨-甲基-2小丁氧乙氧）-2_i_丁氧丙烷，1-(丨-甲 S -2-i-丁氣乙氧）-2-三級丁氧丙烷，1-三級丁氧-2- ( 2-i-丁氧丙氧）丙烷， 1 -三級丁氧-2- ( 2-t-丁氧丙氧）丙烷等； 二丙二醇烷醚乙酸酯類可例舉，例如 乙酸2- ( 2-甲氧丙氧）丙酯，乙酸2- ( 2-乙氧丙氧） 丙酯，乙酸2 - ( 2 -正丙氧丙氧）丙酯，乙酸2 - ( 2 - i -丙氧 丙氣）丙酯，乙酸2- ( 2-正丁氧丙氧）丙酯，乙酸2- ( 2-i-丁氧丙氧）丙酯，乙酸2- ( 2-三級丁氧丙氧）丙酯， 乙酸1-甲基-2- ( 1-甲基-2-甲氧乙氧）乙酯，乙酸1-甲基- 2-U-甲蕋-2-乙氧乙氧）乙酯，乙酸1-甲基- 2-(1-甲基-2-正丙氧乙氧）乙酯，乙酸1-甲基-2- ( 1-甲基- 2-i-丙氧乙氧）乙酯，乙酸1-甲基- 2-(1-甲基-2-正丁氧乙氧 )乙酯，乙酸卜甲基-2 -(】-甲蕋-2 - i - 丁氣乙氧）乙酯， 乙酸1·甲基- 2-(1-甲基-2-三級丁氧乙氧）乙酯， 丙酸2- ( 2-甲氧丙氧）丙酯，丙酸2- ( 2-乙氧丙氧） 丙酯，丙酸2- ( 2-正丙氧丙氧）丙酯，丙酸2- ( 2-i-丙氧 丙氧）丙酯，丙酸2-(2 -正丁氧丙氧）丙酯，丙酸2-(2-i - 丁氧丙氧）丙酯，丙酸2 - ( 2 -三級丁氧丙氧）丙酯，丙 酸1-甲基- 2-(1-甲基-2-甲氧乙氧）乙酯，丙酸】-甲基- 2-(1-甲基-2-乙氧乙氧）乙酯，丙酸丨-甲基-2- ( 1 -甲基- 2-正丙氧乙氧）乙酯，丙酸1-甲基-2-(]-甲基-2-i-丙氧乙 -39- (36) (36)1338190 氧）乙酯，丙酸1-甲基-2- ( 1-甲基-2-正丁氧乙氧）乙酯 ，丙酸]-甲蕋-2 - ( 1 -甲基-2 -! -丁氧乙氧）乙酯，丙酸1 -甲基- 2-(1-甲基-2-三級丁氧乙氧）乙酯， 丁酸2 - ( 2 -甲氧丙氣）丙酯，丁酸2 - ( 2 -乙氧丙氧） 丙酯，丁酸2 - ( 2 -正丙氧丙氧）丙酯，丁酸2 - ( 2 - i -丙氧 丙氧）丙酯，丁酸2- ( 2-正丁氧丙氧）丙酯，丁酸2- ( 2-i - 丁氧丙氧）丙酯，丁酸2 - ( 2 -三級丁氧丙氧）丙酯， 丁酸1-甲基- 2-(1-甲基-2-甲氧乙氧）乙酯，丁酸1-甲基- 2-( 1-甲基-2-乙氧乙氧）乙酯，丁酸1-甲基- 2-( 1-甲基-2-正丙氧乙氧）乙酯，丁酸1-甲基- 2-(1-甲基- 2- i-丙氧乙氧）乙酯，丁酸1-甲基- 2-(】-甲基-2-正丁氧乙氧 )乙酯，丁酸1 -甲基-2 - ( 1 -甲基-2 - i - 丁氧乙氧）乙酯， 丁酸1-甲基-2- ( 1-甲基-2-三級丁氧乙氧）乙酯， 異丁酸2 - ( 2 -甲氧丙氧）丙酯，異丁酸2 ·( 2 -乙氧丙 氧）丙酯，異丁酸2- ( 2-正丙氧丙氧）丙酯，異丁酸2-(2 - i -丙氧丙氧）丙酯，異丁酸2 - ( 2 -正丁氧丙氧）丙酯 ，異丁酸2- ( 2-i-丁氧丙氧）丙酯，異丁酸2- ( 2-三級丁 氧丙氧）丙酯，異丁酸卜甲基-2- ( 1-甲基-2-甲氧乙氧） 乙酯，異丁酸卜甲基-2- ( 1-甲基-2-乙氧乙氧）乙酯，異 丁酸]-甲基-2-(1-甲基-2-正丙氧乙氧）乙酯，異丁酸1-甲基-2- ( 1-甲基- 2-i-丙氧乙氧）乙酯，異丁酸1-甲基-2-(1 -甲基-2 -正丁氧乙氧）乙酯，異丁酸1 -甲基-2 - ( 1 -甲 基-2 - i - 丁氧乙氧）乙酯，異丁酸〗-甲莛-2 -(】-甲基-2 -三 級丁氧乙氧）乙酯， -40- (37) (37)1338190 戊酸2 - ( 2 -甲氧丙氧）丙酯，戊酸2 - ( 2 -乙氧丙氧） 丙酯，戊酸2- ( 2-正丙氧丙氣）丙酯，戊酸2- ( 2-i-丙氧 丙氧）丙酯，戊酸2- ( 2-正丁氧丙氧）丙酯，戊酸2- ( 2- 1 - 丁氣丙氧）丙酯，戊酸2-(2 -三級丁氧丙氧）丙酯， 戊酸1-甲基- 2-(1-甲基-2-甲氧乙氧）乙酯，戊酸1· 甲基-2- ( 1-甲基-2-乙氧乙氣）乙酯，戊酸1-甲基-2- ( 1-甲基-2-正丙氧乙氧）乙酯，戊酸1-甲基- 2-(1-甲基- 2-i-丙氧乙氧）乙酯，戊酸1-甲基- 2-(1-甲基-2-正丁氧乙氧 )乙酯，戊酸1-甲基- 2-(1-甲基- 2-i-丁氧乙氧）乙酯， 戊酸1-甲基-2- ( 1-甲基-2-三級丁氧乙氧）乙酯， 3 -甲基丁酸2-(2 -甲氧丙氧）丙酯，3 -甲基丁酸2-( 2 -乙氧丙氣）丙酯，3 -甲基丁酸2 - ( 2 -正丙氧丙氧）丙酯 ，3-甲基丁酸2-(2-i-丙氧丙氧）丙酯，3-甲基丁酸2-( 2 -正丁氧丙氧）丙酯，3 -甲基丁酸 2 - ( 2 - i - 丁氧丙氧）丙 酯，3 -甲基丁酸2 - ( 2 -三級丁氧丙氧）丙酯， 3-甲基丁酸卜甲基-2- ( 1-甲莛-2-甲氧乙氧）乙酯， 3-甲基丁酸1-甲基- 2-(1-甲基-2-乙氧乙氧）乙酯，3-甲 基丁酸1-甲基- 2-(1-甲基-2-正丙氧乙氧）乙酯，3-甲基 丁酸]-甲基-2 - ( 1 -甲基-2 -1 -丙氧乙氧）乙酯，3 -甲基丁 酸1-甲基- 2-(1-甲基-2-正丁氧乙氧）乙酯，3-甲基丁酸 1-甲基- 2-(1-甲基- 2-i-丁氧乙氧）乙酯，3-甲基丁酸1·甲 基·2· ( 1-甲基-2-三級丁氧乙氧）乙酯， 2，2 -二甲基丙酸2 - ( 2 -甲氧丙氧）丙酯，2，2 -二甲基 丙酸2- ( 2-乙氧丙氧）丙酯，2,2-二甲基丙酸2- ( 2-正丙 -41 - (38) (38)1338190 氧丙氧）丙酯，2,2 -二甲基丙酸2 - ( 2 - i -丙氧丙氧）丙酯 ，2，2 -二甲基丙酸2 - ( 2 -正丁氧丙氧）丙酯，2,2 -二甲基 丙酸2- ( 2-i-丁氣丙氧）丙酯，2,2-二甲基丙酸2- ( 2-三 級丁氧丙氧）丙酯， 2,2 -二甲基丙酸1-甲基- 2-(]-甲基-2-甲氧乙氧）乙 酯，2,2-二甲基丙酸丨-甲基- 2-(1-甲越-2-乙氧乙氧）乙 酯，2,2-二甲基丙酸1 -甲基-2- ( 1 -甲基-2-正丙氧乙氧） 乙酯，2，2-二甲基丙酸1-甲基- 2-( 1-甲基- 2-i-丙氧乙氧） 乙酯，2,2 -二甲基丙酸1-甲基- 2-(1-甲基-2-正丁氧乙氧 )乙酯，2,2-二甲基丙酸1-甲基- 2-(1-甲基- 2-i-丁氧乙氧 )乙酯，2,2-二甲基丙酸]-甲基- 2·(]-甲基-2-三級丁氧 乙氧）乙酯等。 二丙二醇二酯類可例舉，例如 乙酸2-(2 -甲基羰氧丙氧）丙酯，乙酸2-(2 -乙基羰 氧丙氣）丙酯，乙酸2 - ( 2 -正丙基羰氧丙氧）丙酯，乙酸 2- ( 2-i-丙基羰氧丙氧）丙酯，乙酸2- ( 2-正丁基羰氧丙 氧）丙酯，乙酸2 - ( 2 - i - 丁基羰氧丙氧）丙酯，乙酸2 -( 2-三級丁基羰氧丙氧）丙酯，乙酸1-甲基-2-(]-甲基-2-乙基羰氧乙氧）乙酯，乙酸】-甲基- 2-( 1-甲基-2-正丙基 羰氧乙氧）乙酯，乙酸1-甲基-2- ( 1-甲基- 2-i-丙基羰氧 乙氧）乙酯，乙酸1-甲基- 2-(1-甲基-2-正丁基羰氧乙氧 )乙酯，乙酸1-甲基- 2-(1-甲基-2-i-丁基羰氧乙氧）乙 酯，乙酸1 -甲基-2 - ( 1 -甲基-2 -三級丁基羰氧乙氧）乙酯 -42 - (39) (39)1338190 丙酸2- ( 2-乙基羰氧丙氧）丙酯，丙酸2- ( 2-n-丙基 羰氧丙氣）丙酯，丙酸2 - ( 2 - i -丙基羰氧丙氧）丙酯，丙 酸2 - ( 2 -正丁越羰氧丙氧）丙酯，丙酸2 - ( 2 - i - 丁基羰氧 丙氧）丙酯，丙酸2 - ( 2 -三級T基羰氧丙氧）丙酯， 丙酸]-甲基- 2-M -甲基-2-正丙基羰氧乙氧）乙酯， 丙酸1-甲基-2-(卜甲基- 2-i-丙基羰氧乙氧）乙酯，丙酸 】-甲基- 2-(1-甲基-2-正丁基羰氧乙氧）乙酯，丙酸]-甲 基- 2-(1-甲基-2-i-丁甚羰氧乙氧）乙酯，丙酸1-甲基- 2-(1-甲基-2-三級丁基羰氧乙氧）乙酯， 丁酸2 - ( 2 -正丙基羰氧丙氧）丙酯，丁酸2 - ( 2 - i -丙 基羰氧丙氧）丙酯，丁酸2-(2 -正丁基羰氧丙氧）丙酯， 丁酸2 - ( 2 - i - 丁基羰氧丙氧）丙酯，丁酸2 - ( 2 -三級丁基 羰氧丙氧）丙酯， 丁酸1-甲基- 2-(1-甲基- 2-i-丙基羰氧乙氧）乙酯， 丁酸1-甲基- 2-(1-甲基-2-正丁基羰氧乙氧）乙酯，丁酸 ]-甲基-2-(]-甲基- 2-i-丁基羰氧乙氧）乙酯，丁酸1-甲 基-2 - ( 1 -甲基-2 -三級丁基羰氧乙氧）乙酯， 異丁酸2- ( 2-i-丙基羰氧丙氧）丙酯，異丁酸2- ( 2-正丁基羰氧丙氧）丙酯，異丁酸2 - ( 2 - i - 丁基羰氧丙氧） 丙酯，異丁酸2 - ( 2 -三級丁基羰氧丙氧）丙酯， 異丁酸1-甲基-2-(]-甲基-2-正丁基羰氧乙氧）乙酯 ，異丁酸1 -甲基-2 - ( 1 -甲基-2 - i - 丁基羰氧乙氧）乙酯， 異丁酸】-甲基-2- ( 1-甲基-2-三級丁基羰氧乙氧）乙酯， 戊酸2 - ( 2 -正丁基羰氧丙氧）丙酯，戊酸2 - ( 2 - i - 丁 -43- (40) (40)1338190 基羰氧丙氧）丙酯，戊酸2 - ( 2 -三級丁基羰氣丙氧）丙基 酯， 戊酸1-甲基- 2-(1-甲基- 2-i-丁基羰氧乙氧）乙酯， 戊酸1-甲丛-2- ( 1-甲基-2-三級丁基羰氧乙氧）乙酯， 3 -甲基丁酸2-(2-i -丁基羰氧丙氧）丙酯，3 -甲基丁 酸2 - ( 2 -三級丁基羰氧丙氣）丙酯， 3-甲基丁酸1-甲基-2- ( 1-甲基-2-三級丁基羰氧乙氧 )乙酯， 2,2 -二甲基丙酸2-(2-三級丁基羰氧丙氧）丙酯等。 該等有機溶劑（1 )中， 有機溶劑（I - 1 )方面，有1，2 -二乙氧丙烷，1 -甲氧-2-乙氧丙烷，1-甲氧-2-正丙氧丙烷，丙酸 1-甲基-2-甲氣 乙酯，丙酸1-甲基-2-乙氧乙酯，丁酸1-甲基-2-甲氧乙酯 ，丁酸1-甲基-2-乙氧乙酯等； 有機溶劑（1-2 )方面，有乙酸2-正丙氧丙酯，乙酸 2-正丁氧丙酯，乙酸2-甲基羰氧丙酯，乙酸2-乙基羰氧 丙酯等； 有機溶劑（I - 3 )方面，有1 -正丙氧-2 -甲氧丙烷，1 -正丙氧-2 -乙氧丙烷，乙酸1 -甲基-2 -正丙氧乙酯，乙酸1 -甲基-2-正丁氧乙酯，丙酸1-甲基-2-正丙氧乙酯，丙酸1-甲基-2-正丁氧乙酯，丙酸2-正丙氧丙酯，丙酸2-正丁氧 丙酯，乙酸2 -甲基羰氧丙酯，乙酸2 -乙基羰氧丙酯，丙 酸2 -甲基羰氧丙酯，丙酸2 -乙基羰氧丙酯等； 有機溶劑（1-4 )可例舉， -44 - (41) (41)1338190 卜（1-甲甚-2-甲氧乙氧）-2_甲氧丙烷，丨·（丨_甲越· 2-甲氧乙氧）-2-乙氧丙烷，甲基-厂乙氧乙氧）-2· 乙氧丙’ 1-乙氧- 2-(2 -甲氧丙氧）丙院’乙酸2-(2 -甲 氧丙氧）丙醋，乙酸2 - ( 2 _乙氧丙氣）丙酯，乙酸2 - ( 2 -甲基羰氧丙氧）丙酯，乙酸2_ ( 2乙基羰氧丙氧）丙酯等 較佳。 本發明中’有機溶劑（I )可單獨或混合兩種以上使 用。 有機溶劑（I ) ’在活體内代謝，並不會產生甲氧乙 酸或乙氧乙酸’在安全之同時，對大型基板具有良好塗布 性’在顯影步驟中即使超過最適顯影時間亦可形成更良好 的圖型形狀’而可獲得具有充分顯影界限之敏輻射線性樹 脂組成物。 本發明中’與有機溶劑（1 ) 一起’可與其他有機溶 劑併用。 前述其他之有機溶劑方面，（A )鹼可溶性樹脂及（ B )酸產生劑以及依照情形所添加之其他添加劑予以均勻 地溶解，可使用不與各成分反應者。此種其他有機溶劑方 面，例如，丙二醇甲签醚乙酸酯，丙二醇乙基醚乙酸酯， 二丙二醇單乙基醚，二丙二醇單正丁基醚，三丙二醇單甲 基醚，三丙二醇眾乙基醚，三丙二醇單正丁基醚或，具有 可提高塗膜之膜厚均勻性作用者可例舉’ N -甲基甲醯胺， Ν,Ν -二甲蕋甲醯胺，N -甲基甲醯苯胺’ N -甲基乙醯胺， Ν，Ν -二甲蕋乙醯胺，：Ν -甲基吡咯啶酮’二甲基亞颯，苄基 -45- (42) (42)1338190 乙基醚，二己基醚，丙酮基丙酮，異佛爾酮，己酸，癸酸 ，1 -辛醇，1 -壬醇，苄基醇’乙酸苄酯，苯甲酸乙酯，草 酸二乙酯，順丁烯二酸二乙酯，7 - 丁內酯，碳酸乙烯酯 ，碳酸丙烯酯，乙二醇苯醚乙酸酯等。 該等其他之有機溶劑中’尤其是N -甲基吡咯啶酮， r - 丁內酯，N , N ·二甲基乙醯胺等較佳。 前述其他之有機溶劑可單獨或混合兩種以上使用。 本發明之感放射性樹脂組成物中，其他有機溶劑之使 用量，相對於有機溶劑全量，較佳爲50重量％以下，更 佳爲4 0重量％以下’再佳爲3 0重量。/。以下。其他有機溶 劑之使用量超過5 0重量％時，會有塗膜之膜厚均勻性， 感度或殘膜率降低之虞。 本發明中，（A )使鹼可溶性樹脂，在含有有機溶劑 (1 )之溶媒中聚合來製造，接著將所得（A )鹼可溶性樹 脂之溶液’經（B )與敏輻射線性酸產生劑及依情況所使 用之其他添加劑混合之步驟，來調製敏輻射線性樹脂組成 物較佳。 本發明之敏輻射線性樹脂組成物中，有機溶劑以外之 成分（亦即’ （A )成分，（B )成分及因情況所配合之 其他添加劑之合計）之含有率，可因應組成物之使用目的 或所望Z 0吴厚等而適宜設定，但較佳爲5〜5 0重量％，更 佳爲]〇〜4 0重量％ ’再佳爲丨5〜3 5重量％。 如此調製之敏輻射線性樹脂組成物，係供作使用孔徑 0.2 μ ηι左右之微孔過濾器等予以過濾後使用。 -46 - (43) (43)U38190 本發明之敏輻射線性樹脂組成物，尤其在，層間絕緣 膜或微透鏡之形成極爲有用。 層間絕緣膜或微透鏡之形成方法 fe者，使用本發明之層間絕緣膜形成用敏輻射線性樹 脂組成物或微透鏡形成用敏輻射線性樹脂組成物（以下， 總括e之稱爲「特定物品形成用敏輻射線性樹脂組成物」 。），就形成本發明之層間絕緣膜或微透鏡之方法加以說 明。 本發明之層間絕緣膜或微透鏡之形成方法，至少含有 以下（i )〜（i v )之步驟。該等步驟依照記載順序予以 依次實施。 (i )使特定物品形成用敏輻射線性樹脂組成物之塗 膜形成於基板上之步驟。 (i Ο在該塗膜之至少一部份使輻射線曝光之步驟。 (i i 〇使曝光後之塗膜顯影處理之步驟。 (i v )使顯影後之塗膜予以加熱處理之步驟。 以下，就該等各步驟加以說明。 (i )之步驟中，係將特定物品形成用敏輻射線性樹 脂組成物塗布於基板表面，進行預烘烤藉以將溶劑除去， 在基板上形成塗膜。 前述基板方面，可例舉例如，玻璃越板，矽晶圓或在 該等表面可形成各種金屬層之基板等。 敏輻射線性樹脂組成物之塗布方法方面，並無特別限 -47- (44) (44)1338190 定’例如可採用噴灑法，輥塗布法，旋轉塗布法，棒塗布 法等適宜之方法。 預烘烤之條件方面，依各成分之種類或使用量等而不 同’例如，可在6 0〜1 1 〇 C，3 0秒〜1 5分左右。 所形成塗膜之膜厚，作爲預烘烤後之値，在形成層間 絕緣膜之情況以3〜6 μηι爲佳，在形成微透鏡之情況則以 0.5〜3μηι較佳。 前述（i i )之步驟中，係在所形成塗膜之至少一部份 使輻射線曝光。在僅使塗膜之一部份以輻射線曝光之際， 透過具有所定圖型之掩罩予以曝光。 此時所使用之輻射線方面’可例舉例如，g線（波長 4 3 6 n m ) ，i線（波長3 6 5 n m )等之紫外線，κ r F準分子雷 射，ArF準分子雷射等之遠紫外線’同步加速器幅射線等 X線電子線等帶電粒子線等。該等中以紫外線爲佳。 曝光量，在形成層間絕緣膜之情形以50〜1 ,5 00 j/m 2 爲佳，在形成微透鏡之情形以50〜2,000 j/m2爲佳。 前述（i i i )之步驟中’使用顯影液進行顯影處理將輻 射線之曝光部分除去，藉以形成圖型。 顯影處理所用之顯影液方面，例如’氫氧化鈉，氫氧 化鉀，碳酸鈉，矽酸鈉，矽酸鈉（m e 1 a s i 1 i c i c a c i d )，氨 ，乙越胺，正丙基胺’二乙基胺’二乙基胺乙醇，二正丙 基胺，三乙基胺’甲基二乙基胺’二甲基乙醇胺，三乙醇 胺，氫氧化四甲基銨’氫氧化四乙基銨’吡咯，吡啶， 1,8-二氮雜雙環〔5,4,0〕-7-十一烯’〗，5-二氮雜雙環〔 -48 - (45) (45)1338190 4,3,0〕- 5 -壬烷等之水溶液所成鹼顯影液。 又’在前述鹼顯影液，可使用添加有甲醇，乙醇等水 溶性有機溶媒，界面活性劑或各種有機溶媒。 在邊影方法方面’可適宜利用盛液法，沒漬（ d i p p i n g )法’搖動浸漬法，沖浴法等之適宜方法。顯影 時間’因敏輻射線性樹脂組成物之組成而不同，但較佳爲 3 0〜1 2 0秒左右。 周知之敏輻射線性樹脂組成物，顯影時間自最適値超 過2〇〜25秒左右時因在形成之圖型會有剝離產生，故有 嚴密地控制顯影時間之必要’但在本發明之特定物品形成 用敏幅射線性樹脂組成物之情形’自最適顯影時間超過時 間3 0秒以上，並不會產生圖型之剝離，而可形成所定形 狀之圖型’可使製品原料利用率提高，作業性亦優異。 前述（W)之步驟中，在加熱處理之前，係將顯影後 之塗膜，藉由例如流水洗淨等予以洗淨後，藉由高壓水銀 燈等將輻射線在塗膜全面予以後曝光，可使該塗膜中殘存 之（B )敏輻射線性酸產生劑分解爲佳。 其後’將此塗膜’藉由熱板，烤爐等之加熱裝置予以 加熱處理（事後烘烤處理），可使該塗膜硬化。 則述後曝光中曝光量’較佳爲2,〇〇〇〜5,〇〇〇j/m2左右 〇 在此加熱處理中’加熱溫度，較佳爲1 2 0〜2 5 0。(：， 更佳爲2 0 0〜2 4 〇°C。又加熱時間，因加熱手段而異，但 &例如熱板上進行加熱處理之情形，爲5〜3 〇分鐘，在烤 -49- (46) (46)1338190 爐中進行加熱處理之情形爲3 0〜9 0分鐘。此時，可使用 進行二次以上加熱步驟步進烘烤法（s t e p b a k e )等。 如此，對應於爲目的之層間絕緣膜或微透鏡，可將圖 型狀薄膜形成於驻板之表而上。根據此種層問絕緣膜或微 透鏡之形成方法，可使具有優異特性之層間絕緣膜及微透 鏡高之製品原料利用率容易地形成。 層間絕緣膜 本發明之層間絕緣膜具有，耐溶劑性及耐熱性優異， 具有高光透過率，作爲TFT型液晶顯示元件，磁頭元件 ，積體電路元件，固體攝像元件等之電子部件之層間絕緣 膜可極爲恰當地使用。 微透鏡 本發明之微透鏡，耐溶劑性及耐熱性優異，且具有高 光透過率及良好剖面形狀與底部尺寸，作爲傳真機，電子 影印機，固體攝像元件等之晶片上彩色濾光片之結像光學 系或光纖連接器等中作爲微透鏡或微透鏡陣列可極爲恰當 地使用。 發明之效果 本發明之敏輻射線性樹脂組成物，對活體並無安全性 之問題而且對大型基板亦具有良好塗布性，相對於輻射線 爲高感度’在顯影步驟中即使超過最適顯影時間亦可形成 -50- (47) (47)1338190 良好的圖型形狀之具有充分顯影界限，可使具有高耐溶劑 性’高耐熱性及高光透過率之層間絕緣膜容易形成，又具 有高耐溶劑性，高耐熱性及高光透過率，同時，可形成具 有良好剖面形狀與良好底部尺寸之微透鏡，尤其是，在層 間絕緣膜或微透鏡之形成極爲恰當。 根據本發明之層間絶緣膜或微透鏡之形成方法，可使 具有前述優異特性之層間絕緣膜或微透鏡以高度製品原料 利用率在作業性良好下形成。 【實施方式】 實施例 以下例示實施例’進而具體說明本發明之實施之形態 ’但本發明並非限定於該等實施例者。 在此，份係指重量基準。 共聚物（A )之合成 合成例] 在具備冷却管及攪拌機之燒瓶，裝入2，2，_偶氮雙（ 2,4 -二甲基戊腈）10份，及1-(1-甲基-2-甲氧乙氧）-2-甲氧丙烷250份’接著裝入甲基丙烯酸22份，苯乙烯5 份’三環〔5.2. ] ·0 2 6〕癸-8·基甲甚丙烯酸酯28份，3,4-環氧環己基甲基丙烯酸酯45份及α -甲基苯乙烯二聚物5 份’予以氮取代後’開始緩慢地攪拌。將反應溶液溫度上 升至7 (TC，保持此溫度進行4小時聚合得到含有共聚物 (48) (48)1338190 (A )之聚合物溶液（固形分濃度=2 9.8重量％ )。 此共聚物之M w爲爲8,0 0 0。此共聚物作爲共聚物（ A- 1 )。 合成例2 在具備冷却管，攪拌機之燒瓶裝入，2,2’-偶氮雙（ 2,4-二甲基戊腈）7重量份及1 ,2-二乙氧丙烷2 00份，接 著，裝入甲基丙烯酸1 8份，苯乙烯 5份，三環〔 5.2.1.0 2 6〕癸-8-基甲基丙烯酸酯17重量份，3,4-環氧環 己基甲基丙烯酸酯40份，Ν-環己基順丁烯二醯亞胺20份 及a-甲基苯乙烯二聚物3份，以氮取代後，開始緩慢攪 拌。使反應溶液溫度上升至7 0 °C，保持此溫度5小時， 得到含有共聚物（A )之溶液（固形分濃度=3 1 .5重量％ ) 。。此此共聚物之M w爲爲Π , 0 0 0。此共聚物作爲共聚物 (Α-2)。 合成例3 在具備冷却管，攪拌機之燒瓶，裝入2,2’-偶氮雙（ 2,4-二甲基戊腈）6份及]-乙氧-2- ( 2-甲氧丙氧）丙烷 2 0 0份，接著裝入甲基丙烯酸1 5份，苯乙烯5份，甲基 丙烯酸三環〔5.2.1 ·02’6〕癸-8-基20份，甲莛丙烯酸3,4-環氣環己酯40份，甲基丙烯酸：2-羥乙酯20份及α-甲基 苯乙烯二聚物 3份以氮取代後，開始緩慢攪拌。使反應 溶液之溫度上升至7 0 t，將此溫度保持4.5小時予以聚合 -52- (49) (49)1338190 ，得到含有共聚物（Λ )之溶液（固形分濃度=3 2.7重量％ )° 此共聚物之Mw爲1 3,000。使此共聚物作爲共聚物（ A - 3 ) 〇 合成例4 在具備冷却管，攪拌機之燒瓶，裝入2,2’-偶氮雙（ 2,4-二甲基戊腈）8.5份及1- ( 1-甲基-2-乙氧乙氧）-2-乙 氧丙烷2 2 0份，接著裝入甲基丙烯酸1 5份，苯乙烯5份 ，三環〔5.2·].02·6〕癸-8-基甲基丙烯酸酯 30份，3,4-環 氧環己基甲基丙烯酸酯40份，月桂基甲基丙烯酸酯10份 及α-甲基苯乙烯二聚物3份以氮取代後，開始緩慢攪拌 。將反應溶液之溫度上升至7 (TC，保持此溫度進行4.5小 時聚合獲得含有共聚物（A )之溶液（固形分濃度=3 1 .5 重量％ ) 此共聚物之M w爲8，0 0 0。使此共聚物作爲共聚物（ A - 4 )。 合成例5 在具備冷却管，攪拌機之燒瓶，裝入2,2’-偶氮雙（ 2,4-二甲基戊腈）8.5份及]-(】-甲基-2-甲氧乙氧）-2-甲 氧丙烷2 2 0份，接著裝入甲基丙烯酸1 5份，苯乙烯5份 ，三環〔5·2· 1 ·02’6〕癸-8-越甲基丙烯酸酯30份，3,4-環 氣環己基甲基丙烯酸酯2 0份，對乙烯苄基環氧丙基醚2 0 -53- (50) (50)1338190 份，月桂基甲基丙烯酸酯1 0份及α ·甲越苯乙燒二聚物3 份’以氮取代後，開始緩慢攪拌。將反應溶液之溫度上升 至7 (TC，將此溫度保持4.5小時，得到含有共聚物（Α ) 之溶液（固形分濃度=3 1 . 7 m m % )。此共聚物之M W爲 8,5〇〇。使此共聚物作爲共聚物（Α-5 ) ° 合成例6 在具備冷却管，攪拌機之燒瓶’裝入2，2 ’ -偶氦雙（ 2，4 -二甲基戊腈）8 · 5份及1 -(丨-甲基-2 -甲氧乙氧）-2 -甲 氧丙烷2 2 0份，接著裝入甲基丙烯酸1 5份’苯乙燒5份 ，三環〔5.2.].02,6〕癸-8-基甲基丙烯酸酯30份’ 3,4·環 氧環己基甲基丙烯酸酯20份，環氧丙基甲基丙燃酸酷2〇 份，月桂蕋甲基丙烯酸酯】0份及α-甲基苯乙燦二聚物3 份’以氮取代後’開始緩慢攪拌。將溶液之溫度上升至 7 〇 〇C，使此溫度保持4.5小時，得到含有共聚物（Α )之 溶液（固形分濃度=3 1 · 9重量％ )。 此共聚物之M w爲9，〇 〇 0。使此共聚物作爲共聚物（ Α-6 )。 (Β )酸產生劑之合成 合成例7 在遮光下，於具備攪拌機’滴下漏斗及溫度計之燒瓶 ’裝入2-甲菡-2- ( 2,4-二羥苯基）·4- ( 4 _ ϋ本恶）-7 -經 色滿（chroman) 36.4]¾ ( 100 毫莫耳、 j ’ ]:2-萘醌二 # -54- (51) (51)1338190 氮-5 -磺酸氯化物8 5.4 9 g ( 3 0 0毫莫耳）及丙酮7 3 5毫升， 予以均勻溶解。其後’使此丨谷液之溫度保持於2 〇〜3 0 °C ，並且使三乙胺3 3 _ 3 7 g ( 3 3 0毫莫耳）經3 〇分滴〒後， 在同溫度反應2小時。 反應後’將析出物過濾除去，使濾液投入大過剩之1 重量％鹽酸水溶液，使生成物析出予以漉出，水洗之使濾 液成爲中性爲止後’在真空乾燥機中，於40。(：乾燥1日 ’獲得2 -甲基-2 - ( 2，4 -二經苯基）-4 - ( 4 -經苯基）-7 -經 色滿（1 . 0莫耳）與1，2 -萘醌二疊氮-5 -磺酸氯化物（3.0 莫耳）之縮合物。將此化合物作爲酸產生劑（B - 1 )。 合成例.7中反應成分之種類與使用量如表1所示。 合成例8〜1 2 合成例7中，酚性化合物等之種類與使用量及】，2 _萘 醌二疊氮-5 -磺酸氯化物之使用量如表1所示以外，與合 成例7相同，獲得酸產生劑（B-2 )〜（B-6 )。 -55- (52) (52)1338190 (B) 酸產生劑 酚性化合物等 1,2-萘醌二疊 氮-5-磺酸氯化 物 種類 量 Γνί Μ g 毫莫耳 g 毫莫耳 合成例7 B-1 2-甲基-2-(2,4-二羥苯基)-4-(4-羥苯基)-7-羥基色滿 36.41 100 85.49 300 合成例8 B-2 2-[雙{5-i-丙基-4-羥-2-甲越}苯 基]甲基]酚 40.42 100 55.57 195 合成例9 B-3 1,] ,3-三(2,5-二甲基-4-羥苯蕋-3-苯基)丙烷 48.03 100 54.14 190 合成例10 B-4 4,4’-[1-[4-{]-(4-羥苯基)-1-甲 基乙基}苯基]亞乙基]雙酚 42.42 100 56.99 200 合成例11 B-5 2,3,4-三羥基二苯基酮 23.00 100 74.09 260 合成例]2 B-6 2,3,4,4’-四羥二苯基酮 24.61 100 71.24 250 敏輻射線性樹脂組成物之調製 實施例1 (Λ )成分係將合成例1所得共聚物（A - 1 )之溶液 ，以相當於聚合體（A- 1 ) 1 00份（固形成分）之量，及 酸產生劑（B - 1 ) 2 0份，在丙酸1 -甲基-2 -甲氧乙酯，使 固形分濃度成爲3 0重量％之方式予以溶解後，以口徑 -56- (53) (53)1338190 Q.2pni之膜過濾器過濾 組成物（s - 1 ))。 組成物（S-丨）之組成如表2所示 貿施例2〜1 1 實施例丨中’使（A)成分，（B)成分及（c)成分 之棟類與使用量如表2所示’在實施例"及實施例"余了 如表2所示添加其他添加劑以外，其他與實施例丨相同， 來調製敏輻射線性：樹脂組成物（組成物（S ·2 )〜（s · 11))° 表2中（C )成分及其他添加劑，係如下述，又表 2中實施例7〜1 〇之（b )成分及實施例丨〜n之（c )成 分之記載’係表示各自倂用2種類之化合物。 (c)成分 C-l : 1- ( 1-甲基-2-甲氧乙氧）-2 -甲氧丙烷 C-2 : 1 ,2-二乙氧丙烷 C-3: 1-乙氧_2-(2·甲氧丙氧）丙烷 C-4 : 1- ( ι_甲基·2·乙氧乙氧）-2-乙氧丙烷 C-5 :丙酸1-甲基·2_甲氧乙酯 其他添加劑 D-1 : cymei 300 (三井 Cyanimide 公司製） H Epicoat 828 (油化Shell環氧公司製） -57- (54)1338190 實施例 二 S-ll A-ll (100) ^ & 03 C-l (236) C-5 (56) 1 〇 S-10 _1 A-10 (100) B-4 (15) B-6 (10) C-l (236) C-5 (56) 1 Ο crs ιλ A-9 (100) C〇 C- CQ 3 C-l (236) C-5 (56) 1 oo OO CO A-8 (100) B-2 (15) B-4 (10) C-l (236) C-5 (56) D-2 (5) 卜 r^- in A-7 (100) B-2 (15) B-4 (10) C-l (236) C-5 (56) Q ^ GO A-6 (100) *7 〇 ffl ci- C-l (2]3) C-5 (67) 1 c/b A-5 (100) co Ci C-l (215) C-5 (65) 1 寸 乂 CO A-4 (100) B-4 (20) C-4 (217) C-5 (63) 1 m ΓΟ in A-3 (100) B-4 (20) C-3 (206) C-5 (74) 1 <N cs ob A-2 (100) s § C-2 (217) C-5 (75) 1 — A-l (100) ώ 1 C-l (236) C-5 (44) 1 組成物 (A)成分 (份） (B)成分 (份） (c)成分 (份） 其他添加劑 (份） -58- (55) (55)1338190 層間絕緣膜之性能評價 實施例1 2〜2 2及比較例] 在實施例1 2〜2 2，使用前述實施例1〜1 1所調製之 各組成物，在比較例1，含有使用間甲酚與對甲酚之共縮 聚酚醛淸漆樹脂，多元酚之1,2-萘醌二疊氮-5-磺酸酯及 有機溶劑係使用乳酸乙酯與乙酸1 -甲基-2 -甲氣乙酯（亦 即，丙二醇單甲基醚乙酸酯）之2 : 1 (重量比）混合物 之敏輻射線性樹脂組成物（商品名T F R - 7 9 0，東京應化工 業公司製）（組成物（S - 1 2 ))，以以下之順序進行層間 絕緣膜之性能評價。 組成物之種類及評價結果如表3所示。 -塗布性之評價- 在55Ommx650mm之玻璃基板（厚0.7mm)上，將各 組成物以旋轉速度1 ,4 OOrpm進行30秒旋轉塗佈後，在熱 板上與9(TC預烘烤2分鐘，形成膜厚3.0 μιη之塗膜。 接著，測定除了此基板之各邊之端部起5 c m以内之 中央部分之膜厚，自最大膜厚（Tmax )，最小膜厚（ Tmin )及平均膜厚（Tave )，藉由下述式來計算出膜厚均 勻性進行塗布性之評價。 膜厚均勻性（％) =(Tmax-Tmin) xlOO/Tave -感度之評價- 在矽基板上’使各組成物’以旋轉速度l,400rpm， -59- (56) (56)1338190 旋轉塗佈30秒後’在熱板上於9(TC預烘烤2分，來形成 膜厚3.0 μ m之塗膜。 接著’在所得各塗膜透過具有所定圖型之圖型掩罩， 使用P L A - 5 0 1 F曝光機（佳能公司製超高壓水銀燈），使 曝光時間改變予以曝光後，使用如表3或表4所示顯影液 濃度之氫氧化四甲莲錢水溶液’藉由在2 5 t , 9 0秒之盛 液法予以顯影。其後，以超純水進行1分鐘流水洗淨，乾 燥之，在基板上形成圖型。此時，爲使線之線寬3.0 μ m之 線與間隙（丨0L1S )之圖型完全解像，則使必要之曝光量 作爲最適曝光量，使此最適曝光量作爲感度。此値在 1 7 00 0J/m2以下之情形，感度可謂良好。 -顯影界限之評價- 在矽越板上，使各組成物，以旋轉速度1 ,400 rpm進 行3 0秒旋轉塗佈後，在熱板上於9 0 °C進行2分鐘預烘烤 ’來形成膜厚3·0μιη之塗膜。 接著，在所得之各塗膜透過具有線之線寬3.0 μηι之線 與間隙（10L1S )之圖型之掩罩，使用PLA-501F曝光機 (佳能公司製超高壓水銀燈），在前述「感度之評價」中 以最適曝光量進行曝光後，使用如表3或表4所示顯影液 濃度之氫氧化四甲基銨水溶液藉由在2 5 °C，9 0秒之盛液 法進行顯影。其後，以超純水進行1分鐘流水洗淨，乾燥 之’在基板上形成圖型。此時，要使線之線寬成爲3.〇μηι 爲必要之顯影時間作爲最適顯影時間，又超過最適顯影時 -60- (57) (57)1338190 間進而使顯影持續之際，測定線之線寬3 · 〇 μπ1之圖型至剝 離爲止之時間作爲顯影界限。顯影界限在3 〇秒以上時， 顯影界限可謂良好。 -耐溶劑性之評價- 在矽基板上’將各組成物，以旋轉速度1 , 4 0 〇 r p m旋 轉塗佈3 0秒後’在熱板上以9 0 °C預烘烤2分，來形成膜 厚3.0μηι之塗膜。 接著’在所得各塗膜使用PLA-501F曝光機（佳能公_ 司製超高壓水銀燈），使累計曝光量成爲3，0 0 0 j / m 2之方 式予以曝光後’使基板在潔淨烤爐内於220 °C加熱1小時 獲得硬化膜。其後，測定所得之各硬化膜之膜厚（T丨}， 又在硬化膜所形成之各基板予以控制於7 0 °C溫度之二$ 基亞颯中予以浸漬20分鐘後，測定硬化膜之膜厚（t】） ’藉由下述式’計算出浸漬前後之膜厚變化率，來評價耐 溶劑性。此値在5%以下時，耐溶劑性可謂良好。 膜厚變化率（％) = ( |tl - T1 |xl00) /T1 又，耐溶劑性之評價中，因在塗膜並無形成圖型之必 要，故並不進行曝光處理及顯影處理。 -耐熱性之評價一 與前述「耐溶劑性之評價」相同，形成硬化膜，來測 定各硬化膜之膜厚（Τ2 )。 接著，將硬化膜所形成基板在淨爐内以2 4 0 °C進行1 -61 - (58) (58)1338190 小時追加加熱處理後，來測定該硬化膜之膜厚（t2 ) ’並 由下式箅出追加之加熱處理前後之膜厚變化率，來評價其 耐熱性。此値在5%以下時’耐熱性可謂良好。 膜厚變化率〔％〕= ( | t2-T2 | X 1 00 ) / T2 〔透明性之評價〕 上述之耐溶劑性之評價中，以玻璃基板「corning 7059 (Dow Corning公司製）」替代砂基板以外，其他則 同樣方式，在玻璃基板上形成硬化膜。 接著，在可形成硬化膜之各基板之400〜8 OOnm之波 長範圍中之光透過率，使用分光光度計^ 1 5 0 -2 0型 Double beam」（□立製作所公司製）來测定。此値爲 9 0 °/。以上時，透明性可謂良好。 -62- (59)1338190 比較例 S-12 CN 1 1 2.38 2200 Ο Ο (Ν 9 〇 (N — 〇 ι〇 CN … m 〇〇 實施例 (N (N S-ll OO κτ) Ο • 〇 ΙΛ) Ο ο 卜 ^ - ^ - m On S-10 ^Ν〇 0.5 550 Ο ο ν〇 m r^i (Ν On C/5 0.4 500 Ο ΙΟ Ο m - 苳 ON OO κλ O) 0.4 600 ο ο Γ^· m ^ - 5； 〇〇 卜 ζλ OO 寸 2 ο § ο κη oc ro rsi ^ oi ^ (Ν Ο 卜 t/) 2.38 550 Ο Ο 卜 m η - Η ^ m ON \〇 CO I 2.38 1 500 Ο ο cn ^ - (Ν ^ 5； cA 卜 2.38 1 600 Ο ιο ν〇 m (Ν ^ - m O 寸 r^i cA 2.38 550 Ο Ο 卜 r") Η - S - m ON m (N C/) 卜 0.5 550 Ο Ο 〇〇 r-) Η 。 ^ - (N 〇 <N 1 m 0.4 500 Ο ^ "- ^ - 組成物 塗佈^丨‘生（％) 感度 顯影液濃度（ms%) 感度（.丨/m2) 顯影界限 最適顯影時間（秒） 顯影界限（秒） 耐溶劑性 Τ3 (μηι) 膜厚變化率（％) _ 耐熱性 Τ4 (μηι) 膜厚變化率（％) 透明性（％)Dowcorning polysilicon system) and so on. The polyfluorene-based surfactant may be, for example, 'Toray silicone DC3PA, the same as DC7PA, the same SH11PA, the same SH21PA, the same SH28PA, the same SH2 9PA - the same SH3 0PA > the same as FS-1265-300 ( Above, Dongli Dow Corning Co., Ltd.), TSF-4300, same as -4440, with -4445, with -4446, with -4452, with -4460 (above, GE Toshiba Polyoxo Co., Ltd.). As the nonionic surfactant, for example, polyoxyethylene alkyl ethers such as polyoxyethylene lauryl ether, polyoxyethylene stearyl ether, polyethylene oxide oleyl ether, and the like; polyoxyethylene n-octylphenyl group; a polyoxyethylene aryl ether such as an ether or a polyoxyethylene nonylphenyl ether; a polyoxyethylene dialkyl ester such as polyoxyethylene dilaurate or polyoxyethylene distearate; Acrylic copolymer Polyf]OW-No. 5 7, 9 5 (total -30- (27) (27) 1338190 manufactured by Wings Chemical Co., Ltd.), etc. These surfactants can be used individually or in combination of 2 or more types. The amount of the surfactant used is preferably 5 parts by weight or less, more preferably 2 parts by weight or less based on 100 parts by weight of the (A) alkali-soluble resin. When the surfactant is used in an amount of more than 5 parts by weight, there is a tendency that film splitting tends to occur in the coating film. The adhesion aid has a component which has an effect of improving the adhesion to the substrate. As the bonding aid, a decane coupling agent having a reactive substituent such as a carboxyl group, a methacryl oxime group, an isocyanate group or an epoxy group is preferred. The above-mentioned functional decane coupling agent may, for example, be trimethoxymonodecyl benzoic acid, 7-methacryloxypropyltrimethoxy decane, ethylene triethoxy decane, ethylene trimethoxy decane, r - Isocyanatepropyltriethoxydecane, 7-glycidoxypropyltrimethoxydecane, /3 - (3,4-epoxycyclohexyl)ethyltrimethoxydecane, and the like. The amount of the adhesion aid to be used is preferably 20 parts by weight or less, more preferably 1 part by weight or less, based on 100 parts by weight of the (A) alkali-soluble resin. When the amount of the adhesion aid used exceeds 20 parts by weight, the development residue tends to occur during development. 0 (C) Organic solvent - The organic solvent in the present invention contains the compound represented by the above formula (1) (hereinafter, It is called "organic solvent (1)".). Hereinafter, when 'n=1 in the organic solvent (1), (1) R1 is methyl- or -31-(28) (28)1338190 ethyl, R2 is an alkyl group having 1 to 4 carbon atoms or -CO- R3 (herein, R3 is an alkyl group having 2 to 4 carbon atoms) is referred to as "organic solvent (I-1)", (2) R1 represents a methylcarbonyl group, and R2 represents an alkyl group having 3 to 4 carbon atoms or -CO-R4 (wherein R4 is an alkyl group having 1 to 4 carbon atoms) is referred to as "organic solvent (1 - 2 )", and (3) R 1 represents an alkyl group having 3 to 4 carbon atoms or -C Ο - R3 (wherein R3 represents an alkyl group having 2 to 4 carbon atoms), R2 represents an alkyl group having 1 to 4 carbon atoms or -CO-R4 (wherein R4 is an alkane having 1 to 4 carbon atoms) The base is called "organic solvent (1 -3 )", and n = 2 is called "organic solvent (1 -4 )". In the case of an organic solvent (]), in the case of an organic solvent (1 - 4 ), an organic solvent (]-1), a propylene glycol dialkyl ether: (R2 is an alkyl group having 1 to 4 carbon atoms) Means, for example, 1,2-dimethoxypropane, 1-methoxy-2-ethoxypropane, 1-methoxy-2-n-propoxypropane, 1-methoxy-2-i-propoxypropane,]- Methoxy-2-n-butoxypropane, 1-methoxy-2-butoxypropane, 1-methoxy-2-tributoxypropane, 1-ethoxy-2-methoxypropane, 1,2 -diethoxypropane,]-ethoxy-2-n-propoxypropane, ethoxylated 2-i-propoxypropane, 1-ethoxy-2-n-butoxypropane,]-ethoxy-2-i - butoxypropane, 1-ethoxy-2-triethoxypropane, etc.; propylene glycol alkyl ether esters: (R2 is -CO-R3) means, for example, 1-methyl-2-methoxyethyl propionate , 1-methyl-2-ethoxyethyl propionate, 1-methyl-2-methoxyethyl butyrate, butyrate]-methyl-2-ethoxyethyl ester, cesium-methyl isobutyrate 2-methoxyethyl ester, 1-methyl-2-ethoxyethyl isobutyrate, 1-methyl-2-methoxyethyl valerate, 1-methyl-2-ethoxyethyl valerate , 3-methylbutyrate Ι α- (29) (29) 1338190 methyl-2-methoxyethyl ester, 3-methyl Acid-1-methyl-2-ethoxyethyl ester, 2,2-dimethylpropionic acid-methyl-2-methoxyethyl ester, 2,2-dimethylpropionic acid 1-methyl-2 - Ethoxyethyl ester and the like. In terms of organic solvent (1 - 2 ), propylene glycol alkyl ether acetate (R2 is an alkyl group having 3 to 4 carbon atoms) means, for example, 2-n-propoxypropyl acetate, 2-i-propoxypropyl acetate 2-n-butoxypropyl acetate, 2-i-butoxypropyl acetate, 2-tert-butoxypropyl acetate, etc.; propylene glycol diester (R2 is -CO-R4), for example, acetic acid 2 - methyl carbonyl propyl ester, 2-ethyl carbonyl propyl acetate, 2-n-propyl carbonyl propyl acetate, 2-i-propyl carbonyl oxypropyl acetate, 2-n-butyl carbonyl oxyacetate Ester, 2 - i - butyl carbonyl propyl acetate, acetic acid: 2 - ternary butyl carbonyl propyl ester and other organic solvents (1-3 ), propylene glycol dialkyl ethers (R 1 is carbon number 3 ～4 alkyl, R 2 is an alkyl having a carbon number of 1 to 4), for example, 1-n-propoxy-2-methoxypropane, bu-propoxy-2-electropropane,], 2 - 2 - n-propoxypropane, 丨-n-propoxy 2, i-propoxypropane, 1-n-propoxy-2-n-butoxypropane, 丨-n-propoxy-2 - i-butoxypropane, 1- N-propoxy-2-t-butoxypropane, 1 - i -propoxy-2-methoxypropane,]-i-propoxy-2-ethoxypropane,]-i-propoxy-2-benzol Propane, 1,2 -di-1 -propoxypropane, 1 - i -propoxy-2-butoxypropane, 1 - i -propoxy-2- i-butoxypropane, 1 - i - propoxy- 2-tertiary butoxypropane, 1-n-butoxy-2-methoxypropane, 1-n-butoxy-2-ethoxypropane, 1-n-butoxy-2-n-propoxypropane,]-n-butoxy -2 - i -propoxypropane, 1,2 -di-n-33- (30) (30)1338190 butoxypropane, 1-n-butoxy-2-i-butoxypropane, 1-n-butoxy- 2-tertiary butoxypropane, 1-i-butoxy-2-methoxypropane, 1-i-butoxy-2-ethoxypropane, 1-i-butoxy-2-n-propane, propane- I-butoxy-2-i-propoxypropane, Ι-i-butoxy-2-n-butoxypropane, 1,2-di-1-butoxypropane, Ι-i-butoxy-2-triode Butoxypropane > Tert-butylbutoxy-2-methoxypropane, 1-tertiary butoxy-2-ethoxypropane, 1-tertiary butoxy-2-n-propoxypropane, 1-tertiary butane- 2-1-propoxypropane, 1-tertiary butoxy-2-n-butoxypropane, 1-tertiary butoxy-2-i-butoxypropane, 1,2-di-tertiary butoxypropane, etc.; Propylene glycol alkyl ether esters (R1 is an alkyl group having 3 to 4 carbon atoms, R2 is -CO-R4, or R1 is -CO-R3, and R2 is an alkyl group having 1 to 4 carbon atoms) means For example, 1-methyl-2-n-propoxyethyl acetate, 1-methyl-2-ethyl-propoxyacetate, 1-methyl-2-n-butoxyethyl acetate, 1-methyl-acetate- 2-i-butoxyethyl ester, 1-methyl-2-tributyloxyacetate acetate, 2-methoxypropyl propionate, 2-ethoxypropyl propionate, 2-propoxypropionic acid propionate Ester, 2 - i -propoxypropyl propionate, 2-n-butoxypropionate, 2 - i - butoxypropyl propionate, 2-tertiary butoxypropyl propionate, 1-methyl propionate 2--2-propoxyethyl ester, 2-i-propoxy-1-methylethyl propionate, 2-n-butylene propionate-]-formamidine ethyl ester, propionic acid 2 - i - butoxy- 1-methylethyl ester, 2-tris-butoxy-1-methylethyl propionate, 2-methoxypropyl butyrate, 2-ethoxypropyl butyrate, 2-n-propoxypropane butyrate Ester, 2 - i -propoxypropyl butyrate, 2-n-butoxypropyl butyrate, butyric acid - 34 - (31) (31) 1338190 2 - i - butoxypropyl ester, butyric acid 2 - 3 Butoxypropyl, 1-methyl-2-n-propoxyethyl butyrate, methyl-2-i-propoxyethyl butyrate, 1-methyl-2-n-butoxyethyl butyrate, butyl Acid 1-methyl-2-i-butoxyethyl ester, butyric acid 1-methylidene-2-t-butane ethyl ester, isobutyric acid 2-methoxypropyl ester, isobutyric acid 2 - Oxygen. Propyl ester, 2-n-propoxypropyl isobutyrate, 2-i-propoxypropyl isobutyrate, 2-n-butoxypropyl isobutyrate, 2-i-butoxypropyl isobutyrate, different Butyric acid 2-tris-butoxypropyl ester, isobutyric acid methyl -2-n-propoxyethyl, isobutyric acid 1-methyl-2-i-propoxyethyl, isobutyric acid 1-methyl- 2-n-butoxyethyl ester, 1-methyl-2-i-butoxyethyl isobutyrate, isobutylbutyric acid I-methyl-2-tributoxyethyl ester, 2-methoxypropyl valerate , 2-ethoxypropyl valerate, 2-n-propoxypropyl valerate, 2-i-propoxypropyl valerate, 2-n-butoxypropyl valerate, 2-i-butoxypropane valerate Ester, 2-tertiary butoxypropyl valerate, 1-methyl-2-n-propoxyethyl valerate, 1-methyl-2-i-propoxyethyl valerate, 1-methyl valerate · -2-n-butoxyethyl ester, valeric acid]-methyl lotus-2-ί-butoxyethyl ester, valeric acid]-methyl-2 -tertiary butoxyethyl ester, 3-methylbutyric acid 2 - Methoxypropyl ester, 2-ethoxypropyl 3-methylbutyrate, 2-n-propoxypropyl 3-methylbutyrate, 2-i-propoxypropyl 3-methylbutyrate, 3·A 2-butoxypropyl 3-butyrate, 2-butoxypropyl 3-methylbutanoate, 2-t-butoxypropyl 3-methylbutanoate, 1-methyl 3-methylbutyrate Base-2-positive Oxyethyl ester, 3-methylbutyric acid]-methyl-2-i-propoxyethyl ester, 1-methyl-2-n-butoxyethyl 3-methylbutyrate, 3-methylbutyric acid 1 -methyl-2 - i -butoxyethyl ester, 3-methylbutyric acid]-methyl-2 -tertiary butoxyethyl ester, -35 - (32) (32)1338190 2,2-dimethyl 2-methoxypropionate, 2-ethoxypropane 2,2-dimethylpropanoate, 2-n-propoxypropyl 2,2-dimethylpropanoate, 2,2-dimethylpropane Acid: 2-i-propoxypropyl ester, 2,2-dimethylpropionic acid: 2-n-butoxypropyl ester, 2,2-dimethylpropionic acid 2-i-butoxypropyl ester, 2,2 -2 φ 蕋 propionic acid 2 -tri-n-butyl propyl ester 2 : 2 -dimethylpropionic acid 1-methyl-2-n-propoxyethyl ester, 2,2-dimethylpropionic acid 1-methyl -2-i-propoxyethyl ester, 2-methyl-2-n-butoxyethyl 2,2-dimethylpropanoate, 1-methyl-2-i- 2,2-dimethylpropanoic acid Butyloxyethyl ester, 2,2-dimethylpropionic acid 1-methyl·2-anthracene butoxyethyl ester; propylene glycol diester (R1 is -CO-R3, R2 is -CO-R4) means For example, 2-methylcarbonyloxypropionate propionate, 2-ethylcarbonyloxypropyl propionate, 2-n-propylcarbonyloxypropyl propionate, 2-i-propylcarbonyloxypropyl propionate, C 2-n-butylcarbonyloxypropyl acrylate , propionic acid 2 - i - butyl carbonyl propyl ester, propionic acid 2 - ternary butyl carbonyl propyl ester, butyric acid 2-methyl carbonyl propyl ester, butyric acid 2-ethyl carbonyl propyl ester, butyl 2-n-propylcarbonyloxypropyl acrylate, 2-!-propylcarbonyloxypropyl butyrate, 2-n-butylcarbonyloxypropyl butyrate, 2-i-butylcarbonyloxypropyl butyrate, butyl Acid 2-tris-butylcarbonyloxypropyl propylate, 2-methylcarbonyloxypropyl isobutyrate, 2-ethylcarbonyloxypropyl isobutyrate, 2-n-propylcarbonyloxypropyl isobutyrate, different 2-i-propylcarbonyloxypropyl butyrate, 2-n-butylcarbonyl isopropyl isobutyrate, 2-]-butanol oxypropyl isobutyrate, 2-tertiary butyl carbonyl isobutyrate Oxypropyl propyl ester, 2-methylcarbonyloxypropyl valerate, 2-ethylcarbonyloxypropyl valerate, 2-n-propylcarbonyloxypropyl valerate, 2-i-propyl carbonyl propyl valerate , 2-n-butyl-penta-36-(33) (33)1338190 propyl carbonyl, 2-i-butyl carbonyl propyl valerate, 2-tris-butyl carbonyl propyl valerate, 3 2-methylbutyric acid 2-methylcarbonyloxypropyl ester, 3-methylcarbonyloxypropyl 3-methylbutyrate, 2-n-propylcarbonyl propyl 3-methylbutyrate, 3-cylidine Acid 2 - i -propyl carbonyl propyl ester, 3-methylbutyric acid 2-n-butyl carbonyl oxide Ester. 2-i-butyl carbonyl propyl 3-methylbutyrate, 2-trimethyl butyl carbonyl 3-methylbutyrate, 2-methyl carbonyl oxypropane 2,2-dimethylpropanoate Ester, 2,2-dimethylpropionic acid 2-ethylcarbonyloxypropyl ester, 2,2-dimethylpropionic acid 2-n-propylcarbonyloxypropyl ester, 2,2-dimethylpropionic acid 2- I-propyl® carbonyl propyl ester, 2-n-butylcarbonyloxypropyl 2,2-dimethylpropanoate, 2-i-butylcarbonyloxypropyl 2,2-dimethylpropanoate, 2, 2-Dimethyl butyl carbonyl propyl 2-dimethylpropionate and the like. As the organic solvent (1-4), a dipropylene glycol dialkyl ether can be exemplified, for example, 1 -(]-methyl S - 2 -methoxyethoxy)-2-methoxypropane, 1-(1-methyl group) 2-methoxyethoxy)-2-ethoxypropane, 1-(1-methyl--2-methoxyethoxy)-2-n-propoxypropane,]-(1-methyl-2-methyl Oxyethoxy)-2 - i -propoxypropane, 1-(1-methyl-2-methoxyethoxy)-2-n-butoxypropane, b (l-methyl-2-methoxyethoxy) -2-i-butoxypropane, 1-(]-methyl-2-methoxyethoxy)-2-tributoxypropane, 1-ethoxy-2-(2-methoxypropoxy)propane, 1-n-propoxy-2-(2-methoxypropoxy)propane, 1-i-propoxy-2-(2-methoxypropoxy)propane, 1-n-butoxy-2-(2-methoxy) Propoxy)propane, Ι-i-butoxy-2-(2-methoxypropoxy)propane,]-tertiary butoxy-2-(2-methoxypropoxy)propane, 1-(1-methyl -2-Ethyl ethoxy)-2-ethyl propylene, 〖-(: 1-methyl--37-(34) (34)1338190 2-ethoxyethoxy)-2-n-propoxypropane, 1 -(]-Methyl-2-ethoxyethoxy)-2-i-propoxypropane,]-(1-methyl-2-ethoxyethoxy)-2-n-butoxypropane, 1- ( 1 -methyl-2-ethoxyethoxy)-2-i-butoxypropane, 1- ( :!- 2--2-ethoxyethoxy)-2-tertiary butoxypropane, 1-n-propoxy-2-(2-ethoxypropoxy)propane, Ι-i-propoxy-2-(2. ethoxy) Propoxy)propane, n-butoxy-2-(2-ethoxypropoxy)propane, Ι-i-butoxy-2-(2-ethoxypropoxy)propane, 1-tertiary butoxy-2 -(ethoxypropoxy)propane, 1-(1-methyl-2-n-propoxyethoxy)-2_n-propoxypropane,]-(1-methyl-2-n-propoxyethoxy)- 2-i-propoxypropane, 1-(1-methyl-2-n-propoxyethoxy)-2-n-butoxypropane,]-(]-methyl-2-n-propoxyethoxy)-2 -!- Butoxypropane, 1-(1-methyl-l-n-propoxyethoxy)-2-tributoxypropane, bi-propoxy-2-(2-n-propoxypropoxy)propane,丨-n-butoxy-2-(2-n-propoxypropoxy)propane,]-i-butoxy-2 -(2-n-propoxypropoxy)propane, 1-tertiary butoxy-2-( 2-n-propoxypropoxypropane, propane (b-methyl-2I-propoxyethoxy)-2-propoxypropane,]-(bu-methyl-2-phenylpropoxyethoxy)-2-n-butoxypropane , 1 - (1-methyl-2-N-propoxyethoxy)-2 - i -butoxypropane, 1-(]-methyl-2 - i -propoxyethoxy)-2 -triodeoxy Propane, 1-n-butoxy-2-(2-i-propyl Oxypropoxypropane,]-i-butoxy-2-(2-i-propoxypropoxy)propane, 1-tertiary butoxy-2-(2-i-propoxypropoxy)propane, 1 -(丨-Methyl-2-n-butoxyethoxy)-2-n-butoxypropane, 1-(]-methyl-2-n-butoxyethoxy)-2 - i-butoxypropane,:! -(丨-甲-38-(35) 1338190 蕋-2-i-butoxyethoxy)-2-tertiary butoxypropane, 1-i-butoxy-2-(2-n-butoxypropoxy) Propane,]-tertiary butoxy-2-(2-n-butoxypropoxy)propane, (丨-methyl-2butylbutoxyethoxy)-2_i-butoxypropane, 1-(丨-甲 S- 2-i-butane ethoxy)-2-tertiary butoxypropane, 1-tertiary butoxy-2-(2-i-butoxypropoxy)propane, 1-tertiary butoxy-2-( 2 -t-butoxypropoxypropane or the like; dipropylene glycol alkyl ether acetates, for example, 2-(2-methoxypropoxy)propyl acetate, 2-(2-ethoxypropoxy)propyl acetate , 2-(2-propoxypropoxy)propyl acetate, 2-(2-I-propoxyprop) propyl acetate, 2-(2-n-butoxypropoxy)propyl acetate, 2-ethyl acetate (2-i-butoxypropoxy)propyl ester, 2-(2-tertiary butoxypropoxy)propyl acetate, 1-methyl-2-(1-methyl-2-methoxyethoxy)acetate B , 1-methyl-2-U-formaldehyde-2-ethoxyethoxy)ethyl acetate, 1-methyl-2-(1-methyl-2-n-propoxyethoxy)ethyl acetate, acetic acid 1-methyl-2-(1-methyl-2-i-propoxyethoxy)ethyl ester, 1-methyl-2-(1-methyl-2-n-butoxyethoxy)ethyl acetate, Acetate methyl 2-(]-formam-2-(i)-butane ethoxy)ethyl acetate, 1·methyl-2-(1-methyl-2-triethoxybutoxy)ethyl acetate, C 2-(2-methoxypropoxy)propyl acrylate, 2-(2-ethoxypropoxy)propyl propionate, 2-(2-n-propoxypropoxy)propyl propionate, 2-propionic acid 2-i-propoxypropoxy)propyl ester, 2-(2-n-butoxypropoxy)propyl propionate, 2-(2-i-butoxypropoxy)propyl propionate, propionic acid 2 - ( 2-tertiary butoxypropoxyl)propyl, 1-methyl-2-(1-methyl-2-methoxyethoxy)ethyl propionate, propionic acid]-methyl-2-(1-methyl Ethyl-2-ethoxyethoxy)ethyl ester, cesium propionate-methyl-2-(1-methyl-2-n-propoxyethoxy)ethyl ester, 1-methyl-2-(]-propionic acid Methyl-2-i-propoxyethoxy-39-(36) (36)1338190 Oxy)ethyl ester, 1-methyl-2-(1-methyl-2-n-butoxyethoxy)ethyl propionate , propionic acid]-formamidine-2 - (1-methyl-2-!-butoxyethoxy)B , 1-methyl-2-(1-methyl-2-triethoxybutoxy)ethyl propionate, 2-(2-methoxypropenyl)butyrate, butyric acid 2- (2- Propyl oxypropyl) propyl ester, 2-(2-propoxypropoxy) propyl butyrate, 2-(2-i-propoxypropoxy) propyl butyrate, 2-(2-n-butyric acid) Oxypropoxy)propyl ester, 2-(2-i-butoxypropoxy)propyl butyrate, 2-(2-tris-butoxypropoxy)propyl butyrate, 1-methyl-2-butyrate (1-methyl-2-methoxyethoxy)ethyl ester, 1-methyl-2-(1-methyl-2-ethoxyethoxy)ethyl butyrate, 1-methyl-2-butyrate (1-methyl-2-n-propoxyethoxy)ethyl ester, 1-methyl-2-(1-methyl-2-ethyl-propoxyethoxy)ethyl butyrate, 1-methyl butyrate 2-(]-Methyl-2-n-butoxyethoxy)ethyl ester, butyric acid 1-methyl-2 - (1-methyl-2-i-butoxyethoxy)ethyl ester, butyric acid 1 -methyl-2-(1-methyl-2-triethoxybutoxy)ethyl ester, 2-(2-methoxypropoxy)propyl isobutyrate, isobutyric acid 2 ·(2-ethoxy Propoxy)propyl ester, 2-(2-n-propoxypropoxy)propyl isobutyrate, 2-(2-an-propoxypropoxy)propyl isobutyrate, isobutyric acid 2 - (2-positive Butoxypropoxy)propyl ester, isobutyric acid 2- ( 2 -i-butoxypropoxy)propyl ester, 2-(2-tertiary butoxypropoxy)propyl isobutyrate, isobutylbutyric acid methyl-2-(1-methyl-2-methoxyethoxy) Ester, isobutyric acid, methyl-2-(1-methyl-2-ethoxyethoxy)ethyl ester, isobutyric acid]-methyl-2-(1-methyl-2-n-propoxy ethoxy) Ester, 1-methyl-2-(1-methyl-2-i-propoxyethoxy)ethyl isobutyrate, 1-methyl-2-(1-methyl-2-n-butyl) isobutyrate Oxyethoxyethyl)ethyl ester, isobutyric acid 1-methyl-2-(1-methyl-2-indolyloxy)ethyl ester, isobutyric acid-carbamidine-2-(]-methyl -2 - Tert-butyloxyethoxyethyl ester, -40- (37) (37) 1338190 2-(2-methoxypropoxy) propyl valerate, 2-(2-ethoxypropoxy) valerate Propyl ester, 2-(2-n-propoxypropane) propyl valerate, 2-(2-i-propoxypropoxy)propyl valerate, 2-(2-n-butoxypropoxy)propyl pentanoate Ester, 2-(2- 1 -butanepropoxy)propyl valerate, 2-(2-tris-butoxypropoxy)propyl valerate, 1-methyl-2-(pentyl) valerate 2-methoxyethoxy)ethyl ester, valeric acid 1·methyl-2-(1-methyl-2-ethoxyethane)ethyl ester, pentanoic acid 1-methyl-2-(1-methyl -2-n-propoxyethoxyethyl ester, 1-methyl valerate 2-(1-Methyl-2-i-propoxyethoxy)ethyl ester, 1-methyl-2-(1-methyl-2-n-butoxyethoxy)ethyl valerate, valeric acid 1 -methyl 2-(1-methyl-2-i-butoxyethoxy)ethyl ester, 1-methyl-2-(1-methyl-2-triethoxybutoxy)ethyl valerate , 2-(2-methoxypropoxy)propyl 3-methylbutyrate, 2-(2-ethoxypropenyl)propyl 3-methylbutyrate, 3-methylbutyric acid 2- (2- N-propoxypropoxyl)propyl, 2-(2-i-propoxypropoxy)propyl 3-methylbutyrate, 2-(2-n-butoxypropoxy)propyl 3-methylbutyrate, 2-(2-I-butoxypropoxy)propyl 3-methylbutyrate, 2-(2-tris-butoxypropoxy)propyl 3-methylbutyrate, 3-methylbutyrate-methyl 2-(1-Methyl-2-methoxyethoxy)ethyl ester, 3-methyl-2-(1-methyl-2-ethoxyethoxy)ethyl 3-methylbutyrate, 3-methyl 1-methyl-2-(1-methyl-2-n-propoxyethoxy)ethyl ester, 3-methylbutyric acid]-methyl-2 - (1-methyl-2 -1 - Propoxyethoxyethyl ester, 1-methyl-2-(1-methyl-2-n-butoxyethoxy)ethyl 3-methylbutyrate, 1-methyl- 2 -methylbutyric acid -(1-Methyl-2-i-butoxyethoxy)ethyl ester, 3-methylbutyric acid 1·methyl·2· (1-A Benzyl-2-tert-butyloxyethoxy)ethyl ester, 2,2-dimethylpropionic acid 2-(2-methoxypropoxy)propyl ester, 2,2-dimethylpropionic acid 2-(2- Ethoxypropoxyl)propyl, 2,2-dimethylpropionic acid 2-(2-n-propyl-41 - (38) (38) 1338190 oxypropoxy) propyl ester, 2,2-dimethylpropionic acid 2 - ( 2 - i -propoxypropoxy) propyl ester, 2 - ( 2 - n-butoxypropoxy) propyl 2,2-dimethylpropanoate, 2,2-dimethylpropionic acid 2- ( 2-i-butane propoxy)propyl ester, 2-(2-tertiary butoxypropoxy)propyl 2,2-dimethylpropanoate, 1-methyl-2,2-dimethylpropanoate 2-(]-methyl-2-methoxyethoxy)ethyl ester, 2,2-dimethylpropionic acid bismuth-methyl-2-(1-methylidene-2-ethoxyethoxy)ethyl ester, 2-methyl-2-(1-methyl-2-n-propoxyethoxy)ethyl 2,2-dimethylpropanoate, 2-methyl-2-(2,2-dimethylpropionic acid) 1-methyl-2-i-propoxyethoxy) ethyl ester, 2-methyl-2-(1-methyl-2-n-butoxyethoxy)ethyl 2,2-dimethylpropanoate, 2-methyl-2-(1-methyl-2-i-butoxyethoxy)ethyl 2,2-dimethylpropanoate, 2,2-dimethylpropionic acid]-methyl-2 (]-Methyl-2-tertiary butoxyethoxy)ethyl ester and the like. The dipropylene glycol diester may, for example, be 2-(2-methylcarbonyloxypropoxy)propyl acetate, 2-(2-ethylcarbonyloxyprop)acetate acetate, 2-(2-propane-acetic acid) acetate Carbopoloxyprop), 2-(2-i-propylcarbonyloxypropoxy)propyl acetate, 2-(2-n-butylcarbonyloxypropoxy)propyl acetate, acetic acid 2 - ( 2 - i - butylcarbonyloxypropoxy)propyl ester, 2-(2-tris-butylcarbonyloxypropoxy)propyl acetate, 1-methyl-2-(]-methyl-2-ethylcarbonyloxyacetate Ethoxyethyl ester, acetic acid]-methyl-2-(1-methyl-2-n-propylcarbonyloxyethoxy)ethyl acetate, 1-methyl-2-(1-methyl-2-i-acetic acid) -propylcarbonyloxyethoxy)ethyl ester, 1-methyl-2-(1-methyl-2-n-butylcarbonyloxyethoxy)ethyl acetate, 1-methyl-2-(2-ethyl acetate) Benzyl-2-i-butylcarbonyloxyethoxy)ethyl acetate, 1-methyl-2-(1-methyl-2-tris-butylcarbonyloxyethoxy)ethyl acetate-42-(39) ( 39) 1338190 2-(2-ethylcarbonyloxypropoxy)propyl propionate, 2-(2-n-propylcarbonyloxypropane) propionate, 2-(2-i-propyl)propionate Carbonyloxypropoxy)propyl ester, 2-(2-n-butoxycarbonyloxypropoxy)propyl propionate, 2-(2-i-butylcarbonyloxypropoxylate) propionate Propyl ester, 2-(2-tris-T-carbonyloxypropoxy)propyl propionate, propionate]-methyl-2-M-methyl-2-n-propylcarbonyloxyethoxy)ethyl ester Acid 1-methyl-2-(bu-methyl-2-i-propylcarbonyloxyethoxy)ethyl ester, propionic acid]-methyl-2-(1-methyl-2-n-butylcarbonyloxyethoxy) Ethyl ester, propionic acid]-methyl-2-(1-methyl-2-i-butylcarbomethoxyethoxy)ethyl ester, 1-methyl-2-(1-methyl-2-tripropionate) Butyl carbonyloxyethoxy)ethyl ester, 2-(2-n-propylcarbonyloxypropoxy)propyl butyrate, 2-(2-I-propylcarbonyloxypropoxy)propyl butyrate, butyric acid 2-(2-n-butylcarbonyloxypropoxy)propyl ester, 2-(2-I-butylcarbonyloxypropoxy)propyl butyrate, 2-(2-tert-butylcarbonyloxypropoxylate) butyrate Propyl ester, 1-methyl-2-(1-methyl-2-i-propylcarbonyloxyethoxy)ethyl butyrate, 1-methyl-2-(2-methyl-2-butyrate) n-Butylcarbonyloxyethoxy)ethyl ester, butyric acid]-methyl-2-(]-methyl-2-i-butylcarbonyloxyethoxy)ethyl ester, butyric acid 1-methyl-2 - ( 1-methyl-2-tributyloxycarbonylethoxyethyl ester, 2-(2-i-propylcarbonyloxypropoxy)propyl isobutyrate, 2-(2-n-butylbutyl isobutyrate Carbonyloxypropoxyl)propyl isobutyric acid 2 - ( 2 - i - butylcarbonyloxypropoxy) propyl ester, 2-(2-tert-butylcarbonyloxypropoxy)propyl isobutyrate, 1-methyl-2-(]--isobutyric acid Ethyl-2-n-butylcarbonyloxyethoxy)ethyl ester, isobutyric acid 1-methyl-2 - (1-methyl-2-i-butylcarbonyloxyethoxy)ethyl ester, isobutyric acid]- Methyl-2-(1-methyl-2-tris-butylcarbonyloxyethoxy)ethyl ester, 2-(2-n-butylcarbonyloxypropoxy)propyl valerate, valeric acid 2-(2- i - butyl-43- (40) (40) 1338190 carbonyloxypropoxy) propyl ester, 2-(2-tert-butylcarbonyl propyloxy) propyl valerate, 1-methyl-2 valeric acid -(1-Methyl-2-i-butylcarbonyloxyethoxy)ethyl ester, 1-methyl bromo-2-(1-methyl-2-tributyloxycarbonyl)ethyl valerate, 2-(2-i-butylcarbonyloxypropoxy)propyl 3-methylbutyrate, 2-(2-tris-butylcarbonyloxyprop) propyl 3-methylbutyrate, 3-methyl 1-methyl-2-(1-methyl-2-tributyloxycarbonyl)ethyl butyrate, 2-(2-tris-butylcarbonyloxypropane) 2,2-dimethylpropanoate Oxy) propyl ester and the like. In the organic solvent (1), in terms of the organic solvent (I-1), there are 1,2-diethoxypropane, 1-methoxy-2-ethoxypropane, 1-methoxy-2-n-propoxypropane , 1-methyl-2-methoxyethyl propionate, 1-methyl-2-ethoxyethyl propionate, 1-methyl-2-methoxyethyl butyrate, 1-methyl butyrate- 2-ethoxyethyl ester; etc.; organic solvent (1-2), 2-nonpropoxypropyl acetate, 2-n-butoxypropyl acetate, 2-methylcarbonyloxypropyl acetate, 2-ethyl acetate Carboethoxy propyl ester; etc.; in the organic solvent (I - 3 ), there is 1-n-propoxy-2-methoxypropane, 1-n-propoxy-2-ethoxypropane, 1-methyl-2-acetate Propoxyethyl ester, 1-methyl-2-n-butoxyethyl acetate, 1-methyl-2-n-propoxyethyl propionate, 1-methyl-2-n-butoxyethyl propionate, C 2-n-propoxypropyl acrylate, 2-n-butoxypropyl propionate, 2-methylcarbonyloxypropyl acetate, 2-ethylcarbonyloxypropyl acetate, 2-methylcarbonyloxypropyl propionate, 2-ethylcarbonyloxypropyl propionate, etc.; organic solvent (1-4) can be exemplified, -44 - (41) (41) 1338190 (1-carbo-2-methoxyethoxy)-2_ Methoxypropane, 丨·(丨_甲越·2-methoxyethoxy)-2-ethoxy Alkane, methyl-factor ethoxyethoxy)-2·ethoxypropanol 1- 1-oxo-2-(2-methoxypropoxy)propylamine 2-(2-methoxypropoxy)propaneacetic acid, Preferably, 2-(2-ethoxypropane)propyl acetate, 2-(2-methylcarbonyloxypropoxy)propyl acetate, 2-(2-ethylcarbonyloxypropoxy)propyl acetate or the like is preferred. In the present invention, the organic solvent (I) may be used singly or in combination of two or more. The organic solvent (I) 'is metabolized in the living body and does not produce methoxyacetic acid or ethoxyacetic acid'. While it is safe, it has good coating properties for large substrates. It can form better even in the development step even if it exceeds the optimum development time. The pattern shape' is such that a sensitive radiation linear resin composition having a sufficient development limit can be obtained. In the present invention, 'with the organic solvent (1)' can be used in combination with other organic solvents. In the case of the above-mentioned other organic solvents, the (A) alkali-soluble resin and the (B) acid generator and other additives added as the case may be uniformly dissolved, and those which do not react with the respective components may be used. Such other organic solvents, for example, propylene glycol methyl ether acetate, propylene glycol ethyl ether acetate, dipropylene glycol monoethyl ether, dipropylene glycol mono-n-butyl ether, tripropylene glycol monomethyl ether, tripropylene glycol Ethyl ether, tripropylene glycol mono-n-butyl ether or the like, which can improve the film thickness uniformity of the coating film, can be exemplified as 'N-methylformamide, hydrazine, hydrazine-dimethylformamide, N- Methylformamide ' N -methylacetamide, hydrazine, hydrazine - dimethyl acetamide, hydrazine - methylpyrrolidone 'dimethyl hydrazide, benzyl-45- (42) (42 ) 1338190 ethyl ether, dihexyl ether, acetone acetone, isophorone, hexanoic acid, citric acid, 1-octyl alcohol, 1-nonanol, benzyl alcohol 'benzyl acetate, ethyl benzoate, oxalic acid Ethyl ester, diethyl maleate, 7-butyrolactone, ethylene carbonate, propylene carbonate, ethylene glycol phenyl ether acetate, and the like. Among these other organic solvents, particularly N-methylpyrrolidone, r-butyrolactone, N,N-dimethylacetamide, and the like are preferred. The other organic solvents may be used singly or in combination of two or more. In the radiation-sensitive resin composition of the present invention, the amount of the other organic solvent to be used is preferably 50% by weight or less, more preferably 40% by weight or less based on the total amount of the organic solvent, and more preferably 30% by weight. /. the following. When the amount of the other organic solvent used exceeds 50% by weight, the film thickness uniformity of the coating film may be lowered, and the sensitivity or the residual film ratio may be lowered. In the present invention, (A) an alkali-soluble resin is produced by polymerization in a solvent containing an organic solvent (1), and then the solution (B) of the obtained (A) alkali-soluble resin is subjected to (B) and a radiation-sensitive linear acid generator. It is preferred to modulate the radiation sensitive linear resin composition in accordance with the step of mixing other additives used as the case may be. In the sensitive radiation linear resin composition of the present invention, the content of components other than the organic solvent (that is, the sum of the components (A), (B) and other additives as the case may be used according to the composition) The purpose or the desired Z 0 Wu thickness is suitably set, but is preferably 5 to 50% by weight, more preferably 〇~40% by weight, and then more preferably 5 to 35% by weight. The radiation-sensitive linear resin composition thus prepared is used for the use of the aperture. A micropore filter of about 2 μ ηι or the like is filtered and used. -46 - (43) (43) U38190 The sensitive radiation linear resin composition of the present invention is particularly useful in the formation of an interlayer insulating film or a microlens. The method of forming an interlayer insulating film or a microlens, using the interlayer insulating film of the present invention to form a linear composition for a radiation sensitive resin or a linear resin composition for forming a microlens (hereinafter, collectively referred to as "special article formation" The method of forming the interlayer insulating film or the microlens of the present invention will be described using a sensitive radiation linear resin composition. The method for forming an interlayer insulating film or a microlens of the present invention comprises at least the following steps (i) to (i v ). These steps are carried out in order according to the order of description. (i) a step of forming a coating film of a specific material-forming radiation-sensitive linear resin composition on a substrate. (i) a step of exposing the radiation to at least a portion of the coating film. (ii) a step of developing the coating film after exposure. (iv) a step of heat-treating the coating film after development. In the step (i), a specific resin-forming radiation-sensitive linear resin composition is applied onto the surface of the substrate, and pre-baked to remove the solvent to form a coating film on the substrate. For example, a glass cross-over, a germanium wafer or a substrate on which various metal layers can be formed, etc. The coating method of the sensitive radiation linear resin composition is not particularly limited -47- (44) ( 44) 1338190 For example, a suitable method such as a spray method, a roll coating method, a spin coating method, or a bar coating method may be employed. The conditions of the pre-baking differ depending on the type or amount of each component, for example, 6 0 to 1 1 〇C, 30 seconds to about 1 5 minutes. The thickness of the coating film formed is preferably 3 to 6 μηι in the case of forming an interlayer insulating film. The case of the microlens is 0. 5~3μηι is preferred. In the step (i i ), the radiation is exposed at least in part of the formed coating film. Exposure is performed through a mask having a predetermined pattern when only a portion of the coating film is exposed to radiation. The radiation aspect used at this time can be exemplified by ultraviolet rays such as g line (wavelength 4 3 6 nm), i line (wavelength 3 6 5 nm), κ r F excimer laser, and ArF excimer laser. Waiting for the ultraviolet rays, such as X-ray electron lines such as synchrotron radiation, etc., such as charged particle lines. Ultraviolet light is preferred in these. The amount of exposure is preferably 50 to 1, 5 00 j/m 2 in the case of forming the interlayer insulating film, and preferably 50 to 2,000 j/m 2 in the case of forming the microlens. In the above step (i i i ), development treatment using a developing solution removes the exposed portion of the radiation to form a pattern. For the developer used in the development treatment, for example, 'sodium hydroxide, potassium hydroxide, sodium carbonate, sodium citrate, sodium citrate (me 1 asi 1 icicacid), ammonia, acetaminophen, n-propylamine 'diethyl Amine 'diethylamine ethanol, di-n-propylamine, triethylamine 'methyldiethylamine' dimethylethanolamine, triethanolamine, tetramethylammonium hydroxide 'tetraethylammonium hydroxide' pyrrole, Pyridine, 1,8-diazabicyclo[5,4,0]-7-undecene', 5-diazabicyclo[-48-(45)(45)1338190 4,3,0]- An alkali developing solution obtained by an aqueous solution of 5-oxane or the like. Further, in the alkali developing solution, a water-soluble organic solvent such as methanol or ethanol, a surfactant or various organic solvents may be used. In the side shadow method, a suitable method such as a liquid-filling method, a no-staining method (d i p p i n g method), a shaking method, a bathing method, or the like can be suitably employed. The development time ' differs depending on the composition of the sensitive radiation linear resin composition, but is preferably about 30 to 12 seconds. It is known that the radiation linear resin composition has a development time of more than about 2 〇 to 25 seconds since the optimum 値 is caused by peeling off in the formed pattern, so it is necessary to strictly control the development time. In the case of forming a photosensitive radiation-sensitive resin composition, the optimum development time exceeds 30 seconds, and the pattern is not peeled off, and the pattern of the shape can be formed, which can improve the utilization rate of the raw material of the product. Excellent also. In the step (W), before the heat treatment, the developed coating film is washed by, for example, running water, and then the radiation is completely exposed to the coating film by a high pressure mercury lamp or the like. It is preferred to decompose the (B) sensitive radiation linear acid generator remaining in the coating film. Thereafter, the coating film is subjected to heat treatment (post-baking treatment) by a heating means such as a hot plate or an oven to cure the coating film. The exposure amount in the post-exposure is preferably 2, 〇〇〇~5, 〇〇〇j/m2 〇 In the heat treatment, the heating temperature is preferably 1 2 0 to 2 50. (:, more preferably 2 0 0~2 4 〇 ° C. The heating time varies depending on the heating means, but & for example, the heat treatment on the hot plate is 5 to 3 minutes, in the baking -49 - (46) (46) 1338190 The heat treatment in the furnace is 30 to 90 minutes. In this case, the step bake method may be used for the second or more heating steps, etc. The interlayer insulating film or the microlens can form a pattern-shaped film on the surface of the plate. According to the method of forming the interlayer insulating film or the microlens, the interlayer insulating film and the microlens having excellent characteristics can be made high. Interlayer insulating film The interlayer insulating film of the present invention has excellent solvent resistance and heat resistance, and has high light transmittance, and is a TFT type liquid crystal display element, a magnetic head element, an integrated circuit element, and a solid-state imaging device. The interlayer insulating film of an electronic component such as a component can be used extremely suitably. The microlens of the present invention is excellent in solvent resistance and heat resistance, and has high light transmittance and good cross-sectional shape and bottom size as It is extremely suitable to use as a microlens or microlens array in a junction optical system or an optical fiber connector of a color filter on a wafer such as a facsimile machine, an electronic photocopier, a solid-state image sensor, etc. Effect of the Invention The sensitive radiation of the present invention Linear resin composition, which has no safety problem for living organisms and good coating properties for large substrates, and high sensitivity with respect to radiation. 'In the development step, even if it exceeds the optimum development time, it can form -50- (47) ( 47) 1338190 Good pattern shape with sufficient development limit, easy to form interlayer insulating film with high solvent resistance, high heat resistance and high light transmittance, high solvent resistance, high heat resistance and high light transmittance At the same time, a microlens having a good cross-sectional shape and a good bottom size can be formed, and in particular, the formation of an interlayer insulating film or a microlens is extremely appropriate. The method for forming an interlayer insulating film or a microlens according to the present invention can be carried out as described above. The interlayer insulating film or the microlens having excellent characteristics is formed with high workability of the material of the product, and is excellent in workability. EXAMPLES Hereinafter, the examples of the present invention will be specifically described, but the present invention is not limited to the examples. The present invention is not limited to the examples. Here, the parts are based on the weight. The synthetic synthesis example of the copolymer (A) is provided. The flask of the cooling tube and the mixer was charged with 10 parts of 2,2,-azobis(2,4-dimethylvaleronitrile), and 1-(1-methyl-2-methoxyethoxy)-2- 250 parts of methoxypropane' followed by 22 parts of methacrylic acid, 5 parts of styrene 'tricyclic ring [5. 2. · · 0 2 6] 癸-8· carbaryl acrylate 28 parts, 3,4-epoxycyclohexyl methacrylate 45 parts and α-methyl styrene dimer 5 parts 'after nitrogen substitution' Start stirring slowly. The temperature of the reaction solution was raised to 7 (TC, and the temperature was maintained for 4 hours to obtain a polymer solution containing the copolymer (48) (48) 1338190 (A) (solid content concentration = 2 9. 8 wt%). The M w of this copolymer was 8,0 0 0. This copolymer was used as a copolymer (A-1). Synthesis Example 2 In a flask equipped with a cooling tube and a stirrer, 7 parts by weight of 2,2'-azobis(2,4-dimethylvaleronitrile) and 200 parts of 1,2-diethoxypropane were placed, followed by , loaded with 18 parts of methacrylic acid, 5 parts of styrene, three rings [5. 2. 1. 0 2 6] 癸-8-yl methacrylate 17 parts by weight, 3,4-epoxycyclohexyl methacrylate 40 parts, fluorene-cyclohexyl maleimide 20 parts and a-methyl group Three parts of the styrene dimer, after substituting with nitrogen, began to stir slowly. The temperature of the reaction solution was raised to 70 ° C, and the temperature was maintained for 5 hours to obtain a solution containing the copolymer (A) (solid content concentration = 31). 5 wt%). . The M w of this copolymer is Π , 0 0 0. This copolymer was used as a copolymer (Α-2). Synthesis Example 3 In a flask equipped with a cooling tube and a stirrer, 6 parts of 2,2'-azobis(2,4-dimethylvaleronitrile) and]-ethoxy-2-(2-methoxypropoxyl) were charged. ) 200 parts of propane, followed by 15 parts of methacrylic acid, 5 parts of styrene, tricyclomethyline [5. 2. 1 · 02'6] 癸-8-based 20 parts, formazan acrylic acid 3,4-cyclohexyl cyclohexyl ester 40 parts, methacrylic acid: 2-hydroxyethyl ester 20 parts and α-methyl styrene dimer After 3 parts were replaced with nitrogen, slow stirring was started. The temperature of the reaction solution was raised to 70 t, and the temperature was maintained at 4. Polymerization was carried out for 5 hours -52- (49) (49) 1338190 to obtain a solution containing a copolymer (Λ) (solid content concentration = 3 2. 7 wt%) ° The Mw of this copolymer was 13,000. This copolymer was used as a copolymer (A - 3 ) 〇 Synthesis Example 4 In a flask equipped with a cooling tube and a stirrer, 2,2'-azobis(2,4-dimethylvaleronitrile) was charged. 5 parts and 2 2 parts of 1-(1-methyl-2-ethoxyethoxy)-2-ethoxypropane, followed by loading of 5 parts of methacrylic acid, 5 parts of styrene, and tricyclic [5. 2·]. 02·6] 30 parts of 癸-8-yl methacrylate, 40 parts of 3,4-epoxycyclohexyl methacrylate, 10 parts of lauryl methacrylate and α-methyl styrene dimer 3 After the portion was replaced with nitrogen, stirring was started slowly. Raise the temperature of the reaction solution to 7 (TC, keep this temperature for 4. A solution containing the copolymer (A) was obtained by polymerization for 5 hours (solid content concentration = 3 1 . 5 wt%) The M w of this copolymer was 8,0 0 0. This copolymer was used as a copolymer (A-4). Synthesis Example 5 In a flask equipped with a cooling tube and a stirrer, 2,2'-azobis(2,4-dimethylvaleronitrile) was charged. 5 parts and 2,200 parts of]-(]-methyl-2-methoxyethoxy)-2-methoxypropane, followed by 15 parts of methacrylic acid, 5 parts of styrene, tricyclic [5·2 · 1 · 02 '6 ] 癸 -8 - more methacrylate 30 parts, 3, 4-cyclohexane cyclohexyl methacrylate 20 parts, p-vinylbenzyl epoxy propyl ether 2 0 -53- ( 50) (50) 1338190 parts, 10 parts of lauryl methacrylate and 3 parts of α·methyl acetophenone dimer. After being replaced by nitrogen, stirring was started slowly. Raise the temperature of the reaction solution to 7 (TC, keep this temperature at 4. After 5 hours, a solution containing a copolymer (Α) was obtained (solid content concentration = 3 1 . 7 m m % ). The copolymer had an M W of 8,5 Å. This copolymer was used as a copolymer (Α-5) ° Synthesis Example 6 In a flask equipped with a cooling tube, a stirrer was charged with 2,2 '-di-bis(2,4-dimethylvaleronitrile) 8 · 5 parts And 2 - 2 parts of 1-(丨-methyl-2-methoxyethoxy)-2-methoxypropane, followed by loading of 5 parts of methacrylic acid, 5 parts of benzene, and tricyclic [5. 2. ]. 02,6]癸-8-yl methacrylate 30 parts '3,4·epoxycyclohexyl methacrylate 20 parts, epoxy propyl methyl glycerin acid 2 〇, laurel methacrylate Ester] 0 parts and α-methylphenethyl dimer 3 parts 'after nitrogen substitution' began to stir slowly. Raise the temperature of the solution to 7 〇 〇C to maintain this temperature at 4. After 5 hours, a solution containing a copolymer (Α) (solid content concentration = 31.9% by weight) was obtained. The copolymer has a M w of 9, 〇 〇 0. This copolymer was used as a copolymer (Α-6). (Synthesis Synthesis Example 7 of Acid Generator) Under light-shielding, a flask containing a stirrer 'dropping funnel and a thermometer' was charged with 2-methylindole-2-(2,4-dihydroxyphenyl)·4- (4) _ ϋ本恶)-7 - by color (chroman) 36. 4] 3⁄4 (100 mAh, j ′ ]: 2-naphthoquinone II # -54- (51) (51) 1338190 Nitro-5-sulfonic acid chloride 8 5. 4 9 g (300 mmol) and acetone 7 3 5 ml were dissolved uniformly. Thereafter, the temperature of the glutinous solution was maintained at 2 〇 to 30 ° C, and the triethylamine 3 3 _ 3 7 g (3 30 mAh) was drips after 3 Torr, at the same temperature. Reaction for 2 hours. After the reaction, the precipitate was removed by filtration, and the filtrate was poured into a large excess of 1% by weight aqueous hydrochloric acid solution, and the product was precipitated and decanted. After washing with water to make the filtrate neutral, it was 40 in a vacuum dryer. (: 1 day of drying 'obtained 2 -methyl-2 - ( 2,4-diphenyl)-4 - ( 4 -phenyl)-7 -chromate (1. 0 molar) and 1,2-naphthoquinonediazide-5-sulfonic acid chloride (3. 0 moles of condensate. This compound was used as an acid generator (B-1). Synthesis example. The types and amounts of the reaction components in 7 are shown in Table 1. Synthesis Example 8 to 1 2 In the synthesis example 7, the type and amount of the phenolic compound and the like, and the amount of the 2-naphthoquinonediazide-5-sulfonic acid chloride used are as shown in Table 1, and the synthesis example 7 is the same, and an acid generator (B-2)~(B-6) is obtained. -55- (52) (52)1338190 (B) Acid generator phenolic compound, etc. 1,2-naphthoquinonediazide-5-sulfonic acid chloride species Γνί Μ g millimoles g millimolar synthesis 7 B-1 2-methyl-2-(2,4-dihydroxyphenyl)-4-(4-hydroxyphenyl)-7-hydroxychroman 36. 41 100 85. 49 300 Synthesis Example 8 B-2 2-[Double {5-i-propyl-4-hydroxy-2-methylidene}phenyl]methyl]phenol 40. 42 100 55. 57 195 Synthesis Example 9 B-3 1,],3-tris(2,5-dimethyl-4-hydroxyphenylindole-3-phenyl)propane 48. 03 100 54. 14 190 Synthesis Example 10 B-4 4,4'-[1-[4-{]-(4-Hydroxyphenyl)-1-methylethyl}phenyl]ethylidene]bisphenol 42. 42 100 56. 99 200 Synthesis Example 11 B-5 2,3,4-Trihydroxydiphenyl ketone 23. 00 100 74. 09 260 Synthesis Example] 2 B-6 2,3,4,4'-tetrahydroxydiphenyl ketone 24. 61 100 71. Preparation of 24 250 sensitized radiation linear resin composition Example 1 (Λ) component A solution of the copolymer (A-1) obtained in Synthesis Example 1 was equivalent to 100 parts (solid component) of the polymer (A-1). The amount, and the acid generator (B - 1 ) 20 parts, dissolved in 1-methyl-2-methoxyethyl propionate, so that the solid content concentration is 30% by weight, with a diameter of -56 - (53) (53) 1338190 Q. A 2pni membrane filter was used to filter the composition (s - 1 )). The composition of the composition (S-丨) is shown in Table 2, and the examples of the use of the components (A), (B) and (c) are shown in Table 2. The following shows the same as in Example ' except that other additives were added as shown in Table 2 in the Examples " and Examples", to modulate the linearity of the sensitive radiation: resin composition (composition (S·2)~ (s · 11)) ° The components (C) and other additives in Table 2 are as follows, and the components of (b) of the examples 7 to 1 and the components (c) of the examples 丨 to n in Table 2 are described. 'The system indicates that each of the two types of compounds is used. (c) Component Cl : 1-( 1-methyl-2-methoxyethoxy)-2-methoxypropane C-2 : 1 ,2-diethoxypropane C-3: 1-ethoxy 2 - (2. methoxypropoxy) propane C-4 : 1-( ι_methyl·2·ethoxyethoxy)-2-ethoxypropane C-5 : 1-methyl·2_methoxypropane Ester other additive D-1 : cymei 300 (manufactured by Mitsui Cyanimide Co., Ltd.) H Epicoat 828 (manufactured by Oily Shell Epoxy Co., Ltd.) -57- (54) 1338190 Example 2 S-ll A-ll (100) ^ & 03 Cl (236) C-5 (56) 1 〇S-10 _1 A-10 (100) B-4 (15) B-6 (10) Cl (236) C-5 (56) 1 Ο crs ιλ A- 9 (100) C〇C- CQ 3 Cl (236) C-5 (56) 1 oo OO CO A-8 (100) B-2 (15) B-4 (10) Cl (236) C-5 ( 56) D-2 (5) 卜r^- in A-7 (100) B-2 (15) B-4 (10) Cl (236) C-5 (56) Q ^ GO A-6 (100) *7 〇ffl ci- Cl (2]3) C-5 (67) 1 c/b A-5 (100) co Ci Cl (215) C-5 (65) 1 inch 乂CO A-4 (100) B-4 (20) C-4 (217) C-5 (63) 1 m ΓΟ in A-3 (100) B-4 (20) C-3 (206) C-5 (74) 1 <N cs ob A-2 (100) s § C-2 (217) C-5 (75) 1 — Al (100) ώ 1 Cl (236) C-5 (44) 1 Composition (A) (Part) (B) Ingredients (parts) (c) Ingredients (parts) Other additives (parts) -58- (55) (55) 1338190 Performance evaluation of interlayer insulating film Example 1 2 to 2 2 and Comparative Example] Example 1 2 to 2 2, each of the compositions prepared in the above Examples 1 to 1 was used, and in Comparative Example 1, a copolycondensed phenolic enamel resin containing m-cresol and p-cresol was used, and a polyphenol was used. 2-naphthoquinonediazide-5-sulfonate and organic solvent using ethyl lactate and 1-methyl-2-methylacetate acetate (ie, propylene glycol monomethyl ether acetate) 2 : 1 (by weight) mixture of a sensitive radiation linear resin composition (trade name: TFR - 790, manufactured by Tokyo Ohka Kogyo Co., Ltd.) (composition (S - 1 2 )), the performance of the interlayer insulating film was performed in the following order Evaluation. The types of the compositions and the evaluation results are shown in Table 3. - Evaluation of coating property - Each composition was spin-coated at a rotational speed of 1,400 rpm for 30 seconds on a glass substrate of 55 Omm x 650 mm (thickness: 0.7 mm), and then pre-baked on a hot plate with 9 (TC for 2 minutes). A film thickness of 3.0 μm was formed. Next, the film thickness of the central portion within 5 cm from the end of each side of the substrate was measured, from the maximum film thickness (Tmax), the minimum film thickness (Tmin), and the average film. Thickness (Tave), the film thickness uniformity was calculated by the following formula to evaluate the coating property. Film thickness uniformity (%) = (Tmax - Tmin) xlOO / Tave - Evaluation of sensitivity - on the substrate Each composition was spin-coated at a rotational speed of 1,400 rpm, -59-(56) (56) 1338190 for 30 seconds, and then pre-baked on a hot plate at 9 (TC for 2 minutes to form a film thickness of 3.0 μm. Coating film. Then, after each of the obtained coating films was passed through a pattern mask having a predetermined pattern, and the exposure time was changed and exposed using a PLA-500 F exposure machine (super high pressure mercury lamp manufactured by Canon Inc.), the use was as follows. 3 or the developing solution concentration shown in Table 4, the aqueous solution of tetramethylammonium hydroxide is displayed by the liquid solution method at 25 t, 90 seconds. Then, it was washed with ultrapure water for 1 minute, and dried to form a pattern on the substrate. At this time, the pattern of the line width of 3.0 μm and the gap (丨0L1S) was completely solved. For example, the necessary exposure amount is taken as the optimum exposure amount, and the optimum exposure amount is used as the sensitivity. The sensitivity is good in the case of 1 7000 0 J/m 2 or less. - Evaluation of the development limit - On the 矽 board, Each of the compositions was spin-coated at a rotational speed of 1,400 rpm for 30 seconds, and then prebaked on a hot plate at 90 ° C for 2 minutes to form a coating film having a film thickness of 3·0 μm. Each of the obtained coating films was passed through a mask having a line width of 3.0 μηι line and a gap (10L1S), and a PLA-501F exposure machine (super high pressure mercury lamp manufactured by Canon Inc.) was used, and the above "sensitivity evaluation" was performed. After exposure with an optimum exposure amount, development was carried out by using a tetramethylammonium hydroxide aqueous solution having a developing solution concentration as shown in Table 3 or Table 4 by a liquid filling method at 25 ° C for 90 seconds. It is washed with ultrapure water for 1 minute, and dried to form a pattern on the substrate. At this time, To make the line width of the line 3. 〇μηι is the necessary development time as the optimum development time, and exceed the optimum development time -60- (57) (57) 1338190 and then the development continues, the line width of the measurement line is 3 · The time from the pattern of 〇μπ1 to the time of peeling is the development limit. When the development limit is 3 sec or more, the development limit is good. - Evaluation of solvent resistance - On the ruthenium substrate, the composition is rotated at a speed of 1 After 40 seconds of spin coating at 40 rpm, the film was prebaked at 90 ° C for 2 minutes on a hot plate to form a coating film having a film thickness of 3.0 μm. Then, 'the PLA film was obtained by using a PLA-501F exposure machine (Super Canon mercury lamp manufactured by Canon Co., Ltd.), and the total exposure amount was 3,0 0 j / m 2 to expose the substrate. The cured film was obtained by heating at 220 ° C for 1 hour. Thereafter, the film thickness (T丨} of each of the obtained cured films was measured, and each substrate formed of the cured film was immersed in a two-base yttrium controlled at 70 ° C for 20 minutes, and then the cured film was measured. Film thickness (t)) The solvent resistance was evaluated by calculating the film thickness change rate before and after immersion. When the 値 was 5% or less, the solvent resistance was good. The film thickness change rate (%) ) = ( |tl - T1 |xl00) /T1 Further, in the evaluation of solvent resistance, since the coating film is not required to form a pattern, exposure processing and development processing are not performed. - Evaluation of heat resistance In the same manner as the "evaluation of solvent resistance", a cured film was formed to measure the film thickness (Τ2) of each cured film. Next, the substrate formed of the cured film was subjected to 1 - 61 ° at 240 ° C in a clean furnace. 58) (58) After 1338190 additional heat treatment, the film thickness (t2) of the cured film was measured, and the film thickness change rate before and after the additional heat treatment was extracted by the following formula to evaluate the heat resistance. When the temperature is 5% or less, the heat resistance is good. The film thickness change rate [%] = ( | t2-T2 | X 1 00 ) / T2 [ In the evaluation of the solvent resistance, a glass substrate "corning 7059 (manufactured by Dow Corning Co., Ltd.)" was used instead of the sand substrate, and a cured film was formed on the glass substrate in the same manner. The light transmittance in the wavelength range of 400 to 800 nm of each of the substrates of the film was measured using a spectrophotometer (1,500-200 type Double beam) (manufactured by Konica Minolta Co., Ltd.). In the above case, the transparency is good. -62- (59)1338190 Comparative Example S-12 CN 1 1 2.38 2200 Ο Ο (Ν 9 〇(N — 〇ι〇CN ... m 〇〇Example (N (N S -ll OO κτ) Ο • 〇ΙΛ) Ο ο 卜 ^ - ^ - m On S-10 ^Ν〇0.5 550 Ο ο ν〇mr^i (Ν On C/5 0.4 500 Ο ΙΟ Ο m - 苳ON OO Κλ O) 0.4 600 ο ο Γ^· m ^ - 5; 〇〇卜ζλ OO 寸 2 ο § ο κη oc ro rsi ^ oi ^ (Ν Ο 卜 t/) 2.38 550 Ο Ο 卜 m η - Η ^ m ON \〇CO I 2.38 1 500 Ο ο cn ^ - (Ν ^ 5; cA 卜 2.38 1 600 Ο ιο ν〇m (Ν ^ - m O inch r^i cA 2.38 550 Ο Ο 卜 r") Η - S - m O N m (N C/) Bu 0.5 550 Ο Ο 〇〇 r-) Η . ^ - (N 〇 <N 1 m 0.4 500 Ο ^ "- ^ - Composition coating ^% '% (%) Sensitivity developer concentration (ms%) Sensitivity (.丨/m2) Development limit optimum development time (seconds) Development limit (second) Solvent resistance Τ3 (μηι) Film thickness change rate (%) _ Heat resistance Τ4 (μηι) Film thickness change rate (%) Transparency (%)
-63- (60) (60)1338190 微透鏡之性能評價 實施例2 3〜3 3及比較例2 在實施例2 3〜3 3，使用以前述實施例1〜1 1所調製 之各組成物，在比較例2使用組成物（S - 1 2 )，與前述「 層間絕緣膜之性能評價」相同，進行塗布性，耐熱性及透 明性之評價，又以以下之順序來進行微透鏡之性能評價。 各組成物及評價結果如表4所示。 -感度之許價- 在矽基板上，使各組成物，以旋轉速度l,400rpm， 旋轉塗佈30秒後，在熱板上於90 °C預烘烤2分，來形成 膜厚3.0μιη之塗膜。 接著，在所得塗膜透過具有所定圖型之圖型光罩，以 NSR 1 7 5 5Ϊ7Α 縮小投影曝光機（N A = 0 · 5 0，λ = 3 6 5 n m N i k ο η 公司製）使曝光時間變化予以曝光後，以表5或表6所示 顯影液濃度之氫氧化四甲基銨水溶液以2 5 °C，1分之盛液 法進行顯影。其後，以超純水進行1分鐘流水洗淨，乾燥 之，在基板上形成圖型。此時，線之線寬〇 · 8 之線與間 隙圖型（1 L 1 S )之間隙線寬成爲0 · 8 μη!，卻使爲必要之曝 光量成爲最適曝光量，而使此最適曝光量成爲感度。此値 在2,5 00 j/m2以下之場合，感度可謂良好。 -顯影界限之評價- 在矽基板上，使各組成物，以旋轉速度l，40〇rpm進 行3 0秒旋轉塗佈後，在熱板上於9 0 ΐ進行2分鐘預烘烤 ，來形成膜厚3.0 μΓη之塗膜。 -64 - (61) (61)1338190 接著’在所得之各塗膜透過具有所定圖型之圖型掩罩 ’使用NSR1755i7A縮小投影曝光機（ΝΑ = 0·50，λ = 365 nm，Nikon公司製），在前述「感度之評價」中以最適曝 光量進行曝光後’使用表5或表6所示顯影液濃度之氫氧 化四甲基銨水溶液’藉由2 5 t，1分鐘之盛液法予以顯影 。其後’以超純水進行]分鐘流水洗淨，乾燥之，在基板 上形成圖型。此時，線之線寬0 · 8 μ m之線與間隙圖型（ 1LIS )之間隙線幅成爲〇.8μπι，卻爲必要之顯影時間作爲 最適顯影時間，又超過最適顯影時間進而在持績顯影之際 ’測定間隙線寬3 ·0μηι之圖型至剝離爲止之時間作爲顯影 界限。顯影界限在3 0秒以上時，可謂顯影界限良好。 -耐溶劑性之評價一 在矽基板上，將各組成物，以旋轉速度1,4 OOrpm旋 轉塗佈3 0秒後，在熱板上以9 0。(：預烘烤2分，來形成膜 摩3.〇μηι之塗膜。 接著，在所得各塗膜使用PLA-501F曝光機（佳能公 司製超高壓水銀燈），使累計曝光量成爲3,OOOJ/m2之方 #予以曝光後，使基板在潔淨烤爐内於220 °C加熱〗小時 _得硬化膜。其後，來測定所得硬化膜之膜厚（T3 )。又 ’將形成有此硬化膜之基板控制溫度在5 (TC於異丙基醇 中予以浸漬1 〇分後，來測定硬化膜之膜厚（t3 )，由下 遞式，來計算出浸漬前後之膜厚變化率，並予以耐溶劑性 _價。此値在5%以下之情形，耐溶劑性可謂良好。 膜厚變化率（％ ) = ( I t3-T3 | X 1 00 ) /T3 -65- (62) (62)1338190 又，在耐溶劑性之評價中，因在塗膜並無必要形成圖 型，故並不進行曝光處理及顯影處理。 -耐熱性之評價- 與前述「耐溶劑性之評價」相同來形成硬化膜，並測 定各硬化膜之膜厚（丁4)。 又，將可形成硬化膜之各基板在潔淨烤爐内於24(TC 進行1小時追加之加熱處理後’測定硬化膜之膜厚（t4 ) ，藉由下述式，計算出追加之加熱處理前後之膜厚變化率 ，來評價耐熱性。此値爲5%以下時，耐熱性可謂良好。 膜厚變化率（％ ) = ( | t4-T4 I X 1 00 ) /T4 -透明性之評價- 在上述「耐溶劑性」之評價中，以玻璃基板「 Corning 7059 (Dow Corning公司製）」替代矽基板以外 ，其他則同樣方式在玻璃基板上形成硬化膜。 接著，在硬化膜所形成之各基板之4〇〇〜800nm之波 長範圍中光透過率係以，分光光度計「150-20型Double beam」（曰立製作所公司製）來測定。此値爲9 0 %以上時 ，透明性可謂良好。 -微透鏡之評價- 在矽基板上，使各組成物，以旋轉速度1 ,40〇rpm進 行30秒旋轉塗佈後，在熱板上於90°C進行預烘焙2分， 來形成膜厚3.0μηι之塗膜。 接著，在所得之各塗膜透過具有4· Ομπι點（dot ) 2·0μηι間隙圖型之圖型掩罩，使用NSR 1 7 5 5 i7A縮小投影 -66 - (63) 1338190-63- (60) (60) 1338190 Performance Evaluation of Microlens Example 2 3 to 3 3 and Comparative Example 2 In Example 2 3 to 3 3, each composition prepared in the above Examples 1 to 1 1 was used. In the second comparative example, the composition (S - 1 2 ) was used, and the applicability, heat resistance, and transparency were evaluated in the same manner as in the above "Evaluation of the performance of the interlayer insulating film", and the performance of the microlens was performed in the following order. Evaluation. The composition and evaluation results are shown in Table 4. - the price of the sensitivity - the composition was spin-coated at a rotational speed of 1,400 rpm for 30 seconds on a ruthenium substrate, and then prebaked on a hot plate at 90 ° C for 2 minutes to form a film thickness of 3.0 μm. Coating film. Next, the obtained coating film is passed through a pattern mask having a predetermined pattern, and the projection exposure machine (NA = 0 · 50, λ = 3 6 5 nm N ik ο η) is exposed by NSR 1 7 5 5 Ϊ 7 使 to expose the film. After the time change was exposed, the aqueous solution of tetramethylammonium hydroxide having the developer concentration shown in Table 5 or Table 6 was developed at 25 ° C for 1 minute. Thereafter, it was washed with ultrapure water for 1 minute, and dried to form a pattern on the substrate. At this time, the line width of the line width 〇·8 and the gap pattern (1 L 1 S ) becomes 0 · 8 μη!, but the necessary exposure amount becomes the optimum exposure amount, and this optimum exposure is made. The amount becomes sensitivity. In this case, the sensitivity is good at 2,5 00 j/m2 or less. - Evaluation of development limit - Each composition was spin-coated at a rotation speed of 1,40 rpm for 30 seconds on a ruthenium substrate, and then prebaked on a hot plate at 90 rpm for 2 minutes to form a composition. A film having a film thickness of 3.0 μΓη. -64 - (61) (61)1338190 Then use the NSR1755i7A to reduce the projection exposure machine by using each of the obtained coating films through a pattern mask having a predetermined pattern (ΝΑ = 0·50, λ = 365 nm, manufactured by Nikon Corporation) In the above-mentioned "sensitivity evaluation", after exposure at an optimum exposure amount, 'using a solution of a developing solution having a concentration of a solution of tetramethylammonium hydroxide shown in Table 5 or Table 6' by a liquid percolation method of 2 5 t, 1 minute Developed. Thereafter, it was washed with ultrapure water for 10 minutes, and dried to form a pattern on the substrate. At this time, the line width of the line width of 0·8 μ m and the gap pattern (1LIS) are 〇.8μπι, but the necessary development time is the optimum development time, and the optimum development time is exceeded. At the time of development, the time from the pattern of the gap line width of 3·0 μηι to the peeling was measured as the development limit. When the development limit is 30 seconds or more, the development limit is good. - Evaluation of solvent resistance A each composition was spin-coated at a rotational speed of 1,400 rpm for 30 seconds on a crucible substrate, and then 90% on a hot plate. (: pre-bake for 2 minutes to form a film of the film. 3. Then, using the PLA-501F exposure machine (super high pressure mercury lamp manufactured by Canon Inc.) for each of the obtained coating films, the cumulative exposure amount was 3, OOOJ. /m2 of the side # After exposure, the substrate is heated in a clean oven at 220 ° C for a few hours to obtain a cured film. Thereafter, the film thickness (T3 ) of the obtained cured film is measured. The substrate control temperature of the film is 5 (TC is immersed in isopropyl alcohol for 1 〇, the film thickness (t3) of the cured film is measured, and the film thickness change rate before and after the immersion is calculated by the following formula, and The solvent resistance is priced. When the enthalpy is less than 5%, the solvent resistance is good. The film thickness change rate (%) = (I t3-T3 | X 1 00 ) /T3 -65- (62) (62 1338190 In addition, in the evaluation of the solvent resistance, since it is not necessary to form a pattern on the coating film, the exposure treatment and the development treatment are not performed. - Evaluation of heat resistance - The same as the "evaluation of solvent resistance" A cured film is formed, and the film thickness of each cured film is measured (D. 4). Further, each substrate on which the cured film can be formed is in a clean oven After 24 (the TC was subjected to heat treatment for 1 hour), the film thickness (t4) of the cured film was measured, and the film thickness change rate before and after the additional heat treatment was calculated by the following formula to evaluate the heat resistance. When the temperature is 5% or less, the heat resistance is good. The film thickness change rate (%) = ( | t4-T4 IX 1 00 ) / T4 - Evaluation of transparency - In the evaluation of the above "solvent resistance", the glass substrate " Corning 7059 (manufactured by Dow Corning Co., Ltd.), in addition to the ruthenium substrate, forms a cured film on the glass substrate in the same manner. Next, the light transmittance is in the wavelength range of 4 Å to 800 nm of each substrate formed by the cured film. The measurement was carried out by using a spectrophotometer "150-20 Double beam" (manufactured by KK Seiko Co., Ltd.). When the 値 is 90% or more, the transparency is good. - Evaluation of microlenses - On the ruthenium substrate, each The composition was spin-coated at a rotation speed of 1,40 rpm for 30 seconds, and then prebaked on a hot plate at 90 ° C for 2 minutes to form a coating film having a film thickness of 3.0 μm. The film has a gap pattern of 4· Ομπι (dot) 2·0μηι The pattern-mask, using NSR 1 7 5 5 i7A reduced projection -66-- (63) 1338190
曝光機i(NA = O.50，λ= 365nm，Nikon公司製），在前述 「感度之評價」中以最適曝光量曝光後，使用表5或表6 所示顯影液濃度之氫氧化四甲基敍水溶液，藉由在2 5 °C ，1分鐘之盛液法予以顯影。其後，以超純水進行1分鐘 流水洗淨，乾燥之，在基板上形成圖型。其後，使用 PLA-5 01F曝光機（佳能公司製超高壓水銀燈），使累計 曝光量成爲3,00(H/m2之方式予以曝光，在熱板上改變加 熱溫度進行1 〇分鐘加熱處理，使圖型進行熔體流動後， 進而在230 °C進行10分鐘加熱處理，來形成微透鏡。此 時’測定圖型之熔體流動之可能溫度範圍（透鏡形成溫度 )’又所形成之各微透鏡之剖面形狀以掃瞄型電子顯微鏡 予以觀察並評價，進而測定各微透鏡之底部尺寸（與基板 接觸之面之直徑）。Exposure machine i (NA = O.50, λ = 365 nm, manufactured by Nikon Corporation), after exposure to the optimum exposure amount in the "Evaluation of Sensitivity", using the developer concentration of the developing solution shown in Table 5 or Table 6 The aqueous solution of the base was developed by a liquid filling method at 25 ° C for 1 minute. Thereafter, it was washed with ultrapure water for 1 minute, and dried to form a pattern on the substrate. Thereafter, a PLA-5 01F exposure machine (an ultra-high pressure mercury lamp manufactured by Canon Inc.) was used, and the total exposure amount was exposed to 3,00 (H/m2), and the heating temperature was changed on a hot plate to perform heat treatment for 1 minute. After the pattern is melt-flowed, it is further heated at 230 ° C for 10 minutes to form a microlens. At this time, the possible temperature range (lens forming temperature) of the melt flow of the measurement pattern is formed. The cross-sectional shape of the microlens was observed and evaluated by a scanning electron microscope, and the bottom size (diameter of the surface in contact with the substrate) of each microlens was measured.
微透鏡之剖面形狀，係如第1圖之〔A〕之模式例示 圖，在半凸透鏡狀之情形爲良好，如第1圖之〔B〕之模 式例示圖，在底部過渡流動之情形爲不良。又，微透鏡之 底部尺寸，在超過4.0 μηι，不足5.0 μ m之情形，可謂良好 。底部尺寸成爲5.0 μηι以上者，則爲鄰接之透鏡彼此之間 爲接觸之狀態，並不佳。 -67- (64)1338190 1比較例1 CN 1 S-12 1 (N 2.38 2200 Ο Ό (Ν ^ 〇 CN — 〇 m (N ^ 〇〇 120〜 150 B 1超過5.0 實施例 m m 1 S-ll OO 0.5 550 Ο Ο 卜 ΓΛ ^ - "- m ON 1 s < ^ CM m 1 S-10 in 〇 〇 in Ο ο (N ^ m (N °° <N Os 上0 >… 〇 < · rn On OO in 0.4 500 Ο ΙΟ Η - ^ - 上0 >… Ο <ζ ♦ r〇 — 寸 o ΓΟ OO 00 Os· 0.4 550 Ο Ο m S - S - 5； ^ ^^寸 Ο ^ < · r"i 一 々 On (N Γγ ob OO 0.4 600 Ο oo m (Ν ΓΊ 一 (N (Ν Os 丄 〇 > α Ο ^ <； · ΓΟ — 寸 oo (N o 00 VO 2.38 550 ο ο Η ^ m (N ^ ON 上0 ^… 〇 in -< · r~i — 守 〇0 2.38 500 Ο ο 卜 ΓΛ in η ^ (N 豕 上0 >⑺ O i〇 <； ♦ m 一 々 v〇 fN OO 卜 2.38 600 Ο u〇 ν〇 m (Ν ^ ^ - m O 上0 >⑺ ο ό <; · — 呀 in (N cyb vq 2.38 550 ο ο r^] "- ^ - ri ON i, 〇 . ΓΛ Ο ^ *< · (Ν — ^ 艺 (N CO Γ-； 0.5 550 ο ο oo m ^ m (N m (N ^ <N ON 1 S < 3 CnJ VO 0.4 500 ο ^ ^ - ^ ^ (Ν O u〇 < . n — 寸 .成物 塗佈性（％) 感度 顯影液濃度（重M%) 感度（J/m2) 顯影界限 最適顯影時間（秒） 顯影界限（秒） 耐溶劑性 ΤΙ (μηι) 膜厚變化率（％) 耐熱性 Τ2 (μηι) 膜厚變化率（％) 透明性（％) 微透鏡 透鏡形成溫度（t：) 熔融形狀 底部尺寸（μηι) -68- (65)1338190 【圖式簡單說明】 第1圖係例示微透鏡之剖面形狀之模式圖。The cross-sectional shape of the microlens is a schematic diagram of the pattern of [A] in Fig. 1 , and is good in the case of a semi-convex lens shape. As shown in the pattern diagram of [B] in Fig. 1, the transient flow at the bottom is bad. . Further, the bottom size of the microlens is good when it exceeds 4.0 μm and is less than 5.0 μm. If the bottom size is 5.0 μm or more, the adjacent lenses are in contact with each other, which is not preferable. -67- (64) 1338190 1Comparative Example 1 CN 1 S-12 1 (N 2.38 2200 Ο Ό (Ν ^ 〇CN — 〇m (N ^ 〇〇120~ 150 B 1 exceeds 5.0 Example mm 1 S-ll OO 0.5 550 Ο Ο ΓΛ ΓΛ ^ - "- m ON 1 s < ^ CM m 1 S-10 in 〇〇in Ο ο (N ^ m (N °° <N Os on 0 >... 〇< · rn On OO in 0.4 500 Ο ΙΟ Η - ^ - upper 0 >... Ο <ζ ♦ r〇—inch o ΓΟ OO 00 Os· 0.4 550 Ο Ο m S - S - 5; ^ ^^ inchΟ ^ < · r"i 々On (N Γγ ob OO 0.4 600 Ο oo m (Ν ΓΊ (N (Ν Os 丄〇> α Ο ^ <; · ΓΟ — inch oo (N o 00 VO 2.38 550 ο ο Η ^ m (N ^ ON on 0 ^... 〇in -< · r~i - 守〇0 2.38 500 Ο ο 卜ΓΛ in η ^ (N 豕上0 >(7) O i〇<; ♦ m 々v〇fN OO 卜 2.38 600 Ο u〇ν〇m (Ν ^ ^ - m O on 0 >(7) ο ό <; · — 呀 in (N cyb vq 2.38 550 ο ο r^] "- ^ - ri ON i, 〇. ΓΛ Ο ^ *< · (Ν - ^ 艺(N CO Γ-; 0.5 550 ο ο oo m ^ m (N m (N ^ <N ON 1 S < 3 CnJ VO 0.4 500 ο ^ ^ - ^ ^ (Ν O u〇< . n - inch. Applicability (%) Sensitivity developer concentration (weight M%) Sensitivity (J/m2) Development limit optimum development time (seconds) Development limit (seconds) Solvent resistance Properties μ (μηι) Film thickness change rate (%) Heat resistance Τ 2 (μηι) Film thickness change rate (%) Transparency (%) Microlens lens formation temperature (t:) Melt shape bottom size (μηι) -68- ( 65) 1338190 [Simplified description of the drawings] Fig. 1 is a schematic view showing a sectional shape of a microlens.
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