1322940 九、發明說明： 【發明所屬之技術領域】 本發明涉及一種散熱模組及其製備方法，尤其涉及一種發熱元件 與散熱器間有熱介面材料之散熱模組及其製備方法。 【先前技術】 現辦又’半導ΙΙϋ件如GPU等發熱元件之習知散熱方法主要係使 用空氣對流之冷卻方式，其中具有散熱鰭片之散熱器使用最為廣泛。 最初，散熱器與發熱元件之接觸方式多以散熱鰭片基底與發熱元 件直接接觸。1997年4月30日公告之公告號為CN2253493Y之中國大 陸專利揭示-種散熱裝置，其主要由具有風扇之散髓片製成，利用 散熱鰭片之導熱性將熱量由發熱元件帶離，並借由風扇形成空氣對 流，將熱量由散熱鰭片傳導至週邊空氣中，以提高散熱效率。 隨著半導體器件集成工藝之快速發展，半導體器件之集成化程度 越來越高，器件體積變得越來越,】、、産生之熱量愈來愈多，對散熱之 要求亦越來越高。由於散熱H之賴則基底與賴元件細介面不 平整，一般相互接觸面積不到2%，未有一個理想之接觸介面，從根本 上影響發熱元件向散熱錯片傳遞熱量之效果。2〇〇2年12月25日公告 之公告號為CN1097220C之中國大陸專利即提供一種散熱體組合件，二 散熱籍片基底與發熱元件之間增加—層熱介面材料以增加介面之接觸 程度，以減少接觸間隙所形成之熱阻。 常見熱介面材料包括導熱勝、導熱脂及相變材料，隨著散熱過程 對熱介面材料熱阻要求之提升，常見熱介面材料已 公開於趣年9月17日之第6,451，422號美國專利揭示目 變材料及熱料填充物之齡面材料，通縣加金屬粉末、硼氮化人 物等具有較佳導熱性能之填充物，進—步降健介面材料熱阻，提& 導熱性能。然而此類熱介面材料於使用過程中可能出現 = ㈣於散鋪片基底與發熱元件之接觸介面之㈣現間隙，= 觸熱阻增加，導致導熱性能惡化，溢出之熱介面材料還可能引起電路 6 板或其他電路故障。 因此有必要^供一種散熱籍片基底與發熱元件之間接觸熱阻穩 定、散熱安全之散熱模組。 ...... 【發明内容】 為^決先别技術散熱裝置之散熱鰭片基底與發熱元件之間接觸熱 阻不穩定、散熱不安全之問題’本發明之目的在於提供—種散執 基底與發熱元件之間接驗關定、賴安全之散減組。本發明曰之 另一目的在於提供所述散熱模組之製備方法。 為實現本發明之第—目的，本發明提供—種散難組，其包括： •發…、元件’散熱裝置，該散熱裝置包括—基底及自該基底延伸之 複數個散細;位於所紐鱗置基底與發熱元件之間之熱介面材 料及多孔m其巾，所述纽薄齡㈣述熱介研料卵，且於 所述多孔薄膜孔洞中長有碳奈米管。 、 為實現本發.第二目的’本發縣誠組之製備包細下步驟： 1) 於所述發熱元件之接觸介面巾部塗覆—層熱介面材料； 2) 以長有碳奈米管之多孔_覆蓋於所述熱介面養觸，從而將所 述發熱元件之接觸介面完全覆蓋； 3) 將所述散熱裝置通過扣具與發熱元件姊接，使齡面材料及多孔 薄膜被緊壓於所述散熱裝置基底與發熱元件之間。 為進一步實現本發明之第二 之製備包括以下步驟： 目的，所述長有碳奈米管之多孔薄膜 1)通過電解輯-金屬則進行陽極纽，使其職—多孔氧化層及 一未氧化層； 2) 將所述多孔氧化層與未氧化層分離； 3) 於所述多孔氧化層孔洞中填充凝膠； 4) 去除所述多孔氧化層底部之障壁層，形成一填充凝膠之多孔薄膜； 5) 於所述多孔薄膜一側附著一層金屬催化劑； 6) 去除所述多孔薄膜孔洞中填充之凝膠； 7) 於所述多孔薄膜孔洞中生長碳奈米管； 8)去除所述多孔薄膜一侧附著之金屬催化劑。 Μΐϊϊΐί前ί術’本發明所提供之散熱模組，其基底與發熱元件 j通，熱::面材料及多孔薄膜連接，所述熱介面材料被密封於所述 發熱元件形成之賴空間内，從而有效降低熱介面 禮―，P方止熱介面材料溢出’使基底與發熱元件之間接觸熱阻 太4^散熱安全。所述多孔細之制中生長具有優異導熱性 此之碳奈^，使基底與發熱元件之難觸熱_著降低。 【實施方式】 下面將結合附圖對本發明作進一步詳細說明。 一請參閱第-圖’本發3月提供之散熱模組包括：發熱元件1〇 ;包括 一基底51及自該基底51延伸之複數個散熱鰭片52之散熱裝置5〇;位 於所述基底51與發熱元件1〇之間之熱介面材料％及多孔薄膜;其 中’所述多孔薄膜20設置於所述熱介面材料3〇觸，且於所述多孔 薄膜20之孔洞23中長有碳奈米管28。 ,所述發熱元件10於包括中央處理器(cpu)、功率電晶體視頻圖 形陣列晶片（VGA)、射齡片等電子n件，本實施例巾所述發熱元件1〇 為中央處理器（CPU)。 所述散熱裝置50包括風冷式散熱器、水冷式散熱器、孰管散埶器 等’本實施例中所述散熱裝置50為風冷式散熱器，其基底、51及散熱 鯖片52可為-體成型之銘制散熱韓片，亦可為銅基底與射出成型之銘 制散熱鰭Μ職壓、雜、軟焊、硬焊、擴健合、滾軋、雷射焊 接、塑性變形、金屬粉末燒結等技術接合或通過中間物如導熱膠、導 熱脂等方式連接。 所述熱介面材料30包括導熱膠、導熱脂、相變材料或填充有如金 屬粉末、碳奈米管等高導熱物質之上述材料。 、 請參閱第一圖及第二圖，本發明散熱模組之製備包括以下步驟： 1) 於所述發熱元件10之接觸介面中部塗覆一層熱介面材料3〇 ; 2) 以長有碳奈米管之多孔薄膜2〇覆蓋於所述熱介面材料3〇周圍，從 而將所述發熱元件10之接觸介面完全覆蓋； 3)將所述散熱裝置50通過扣具（圖未示）與發熱元件ίο相扣接，使熱 介面材料30及多孔薄膜20被緊壓於所述基底51與發熱元件10之 間。 ‘、’、 本發明散熱模組之製備方法中，所述長有碳奈米管之多孔薄膜2〇 之製備包括以下步驟： 1) 請參閱第三圖，於15°C±rc，濃度為0.4mol/L之草酸中，以鋁片為 陽極進行陽極處理，室溫下通以電流密度為72mA/cm2之電流3小時， 形成具有多個孔洞23之氧化鋁膜22及鋁基片21，所述氧化鋁膜22厚 度為200"m，所述孔洞23之孔徑為lOOrnn ; 2) 請參閱第四圖，採用氣化汞或鹽酸使鋁基片21與氧化鋁膜22分離， 形成獨立之氧化鋁膜22，所述氧化鋁膜22之孔洞23—端封閉，該封 閉端為障壁層25 ; 3) 請參閱第五圖’以凝膠26填充氧化鋁膜22之孔洞23 ; 4) 請參閱第六圖，通過硫酸或磷酸對氧化鋁膜22底部之障壁層四腐 蝕，將障壁層25去除，形成由凝膠26填充之多孔薄膜2〇 ; 5) 請參閲第七圖，於多孔薄膜2〇底部，即原障壁層25一側鍍上一層金 屬催化劑27，從而使多孔薄膜2〇之孔洞23—端由金屬催化劑27封 閉，所述金屬催化劑27可選用鐵、鈷 '鎳或其合金，其厚度範圍為 1〜99nm ; 6) 請參閱第八圖’將於多孔薄膜2〇之孔洞23中填充之凝膠26去除； 7) 請參閱第九圖，通過化學氣相沈積法於一端鍍有金屬催化劑27之孔 洞23中生長碳奈米管28，本實施例中，所述化學氣相沈積過程所採 用碳源氣為乙炔，金屬催化劑27為鐵，碳奈米管28生長溫度為65〇 °C〜700°C ; 8) 凊參閱第十圖，將多孔薄膜2〇附著之一層金屬催化劑27通過干蝕刻 或濕飯刻去除。 相對於先如技術，本發明所提供之散熱模組，其基底51與發熱元 件10之間通過熱介面材料3〇及多孔薄膜2〇連接，所述熱介面材料3〇被 岔封於所述基底51、多孔薄膜2〇及發熱元件1〇形成之密閉空間内，從 1322940 而有效降低熱介面材獅之揮發，防止熱介面材料3〇溢出，使 與發熱之間接聰阻敎，並確保散熱安全。所述 之孔洞23巾生長具有賴導難能之碳奈歸28 執 件10之間接觸熱阻顯著降低。 炫Ux热兀 & =上所述，本發明確已符合刺翻之要件，碰法提出專 •月。惟’以上所述者僅為本發明之較佳實施方式，自不能以 1申請專利細。舉凡熟悉本案技#之人士援依本發明之( 之等效修飾或變化，皆應涵蓋於以下中請專利範圍内。 所作 【圖式簡單說明】 第一圖本發明之散熱模組示意圖。 第二圖沿第—財Π-ΙΙ線剖視圖。 長有碳奈米f之多孔_形成過程。 【主要TL件符號說明】 10 21 23 26 28 50 52 多孔薄膜 氧化鋁膜 障壁層 金屬催化劑 熱介面材料 基底 20 22 25 27 30 51 發熱元件 鋁基片 孔洞 凝膠 碳奈米管 散熱裝置 散熱續片1322940 IX. Description of the Invention: [Technical Field] The present invention relates to a heat dissipation module and a method of fabricating the same, and more particularly to a heat dissipation module having a thermal interface material between a heat generating component and a heat sink and a method of fabricating the same. [Prior Art] Conventional heat dissipation methods for heat-emitting components such as GPUs, such as GPUs, mainly use air convection cooling, and heat sinks with heat-dissipating fins are most widely used. Initially, the contact between the heat sink and the heating element is mostly in direct contact with the heat sink fin substrate. The Chinese Patent of CN2253493Y, published on April 30, 1997, discloses a kind of heat dissipating device, which is mainly made of a loose-skinned piece with a fan, and utilizes the thermal conductivity of the heat-dissipating fin to carry heat away from the heating element, and Air convection is formed by the fan, and heat is conducted from the heat dissipation fins to the surrounding air to improve heat dissipation efficiency. With the rapid development of semiconductor device integration processes, the integration of semiconductor devices is becoming higher and higher, the device volume is becoming more and more, and more and more heat is generated, and the requirements for heat dissipation are becoming higher and higher. Due to the heat dissipation H, the fine interface between the substrate and the substrate is not flat, and generally the contact area is less than 2%. There is no ideal contact interface, which fundamentally affects the heat transfer element to transfer heat to the heat dissipation chip. The Chinese mainland patent with the announcement number CN1097220C published on December 25, 2002 provides a heat sink assembly, and a layer of thermal interface material is added between the heat sink substrate and the heat generating component to increase the contact degree of the interface. To reduce the thermal resistance formed by the contact gap. Common thermal interface materials include thermal conductivity, thermal grease and phase change materials. As the heat dissipation process increases the thermal resistance requirements of thermal interface materials, common thermal interface materials have been disclosed in US Patent No. 6,451,422 on September 17th. It reveals the age-changing materials of the mesh-changing materials and hot-filled materials, and the fillers with better thermal conductivity such as metal powder and boron nitriding characters in Tongxian, and the thermal resistance of the material of the interface material, and the thermal conductivity. However, such a thermal interface material may appear during use. (4) The gap between the contact surface of the dispersion sheet substrate and the heating element is (4) the existing gap, and the thermal resistance is increased, resulting in deterioration of thermal conductivity. The overflow thermal interface material may also cause the circuit. 6 board or other circuit failure. Therefore, it is necessary to provide a heat dissipation module that is in contact with the heat-dissipating element substrate and the heat-generating element with stable thermal resistance and heat dissipation. ...... [Summary of the Invention] The problem of unstable thermal resistance and unsafe heat dissipation between the heat sink fin substrate and the heat generating component of the heat sink of the prior art is 'the purpose of the present invention is to provide a kind of scatter The connection between the substrate and the heating element is determined and the safety is reduced. Another object of the present invention is to provide a method of fabricating the heat dissipation module. In order to achieve the first object of the present invention, the present invention provides a dispersing group comprising: • a ..., a component 'heat sink, the heat sink comprising a base and a plurality of fines extending from the base; The thermal interface material between the substrate and the heating element and the porous m-cloth, the neo-thin (4), the thermal medium, and the carbon nanotube in the porous film hole. In order to achieve the second object of the present invention, the preparation of the present invention is as follows: 1) coating the contact interface of the heating element with a layer of thermal interface material; 2) having a carbon nanometer The porous layer of the tube covers the contact surface of the heat interface to completely cover the contact interface of the heat generating component; 3) the heat dissipating device is connected to the heat generating component through the buckle to make the ageing material and the porous film tight Pressed between the heat sink base and the heat generating component. In order to further achieve the second preparation of the present invention, the following steps are included: The objective is that the porous film having a carbon nanotube tube 1) is subjected to an electrolysis-metal to carry out an anode and a porous oxide layer and an unoxidized layer. 2) separating the porous oxide layer from the unoxidized layer; 3) filling the pores of the porous oxide layer with a gel; 4) removing the barrier layer at the bottom of the porous oxide layer to form a porous filled gel a film; 5) attaching a layer of a metal catalyst to one side of the porous film; 6) removing a gel filled in the pores of the porous film; 7) growing a carbon nanotube in the porous film hole; 8) removing the film A metal catalyst attached to one side of the porous film. The heat dissipation module provided by the present invention has a substrate connected to the heat generating component j, a heat:: a surface material and a porous film, and the heat interface material is sealed in the space formed by the heat generating component. Therefore, the heat interface ritual is effectively reduced, and the P-side thermal interface material overflows to make the contact thermal resistance between the substrate and the heating element too safe. The growth of the porous thin film has excellent thermal conductivity, and the carbon and the heat of the substrate are lowered. [Embodiment] Hereinafter, the present invention will be further described in detail with reference to the accompanying drawings. A heat dissipation module provided by the present invention in March includes: a heat generating component 1; a heat sink 5 including a substrate 51 and a plurality of heat radiating fins 52 extending from the substrate 51; And a porous film between the heat-generating element 1 and the heat-generating element 1; wherein the porous film 20 is disposed on the thermal interface material 3, and the carbon nanocaps are grown in the pores 23 of the porous film 20. Rice tube 28. The heating element 10 includes an electronic device such as a central processing unit (CPU), a power transistor video graphic array chip (VGA), and an ageing chip. The heating element 1 of the embodiment is a central processing unit (CPU). ). The heat dissipating device 50 includes an air-cooled heat sink, a water-cooled heat sink, a manifold, and the like. In the embodiment, the heat sink 50 is an air-cooled heat sink, and the base, 51 and the heat sink 52 can be For the body-forming molding of the heat-dissipating Korean film, it can also be used for the copper base and injection molding of the heat-dissipating fins, pressure, miscellaneous, soldering, brazing, expansion, rolling, laser welding, plastic deformation, Techniques such as sintering of metal powder are joined or connected by an intermediate such as a thermal conductive adhesive or a thermal grease. The thermal interface material 30 comprises a thermal conductive paste, a thermal grease, a phase change material or the above material filled with a highly thermally conductive material such as a metal powder or a carbon nanotube. Please refer to the first figure and the second figure. The preparation of the heat dissipation module of the present invention comprises the following steps: 1) coating a layer of thermal interface material in the middle of the contact interface of the heating element 10; 2) The porous film 2 of the rice tube covers the periphery of the thermal interface material 3〇, thereby completely covering the contact interface of the heating element 10; 3) passing the heat dissipation device 50 through a fastener (not shown) and the heating element The contact interface is such that the thermal interface material 30 and the porous film 20 are pressed between the substrate 51 and the heat generating component 10. ', ', in the preparation method of the heat dissipation module of the present invention, the preparation of the porous film of the carbon nanotubes comprises the following steps: 1) Please refer to the third figure at 15 ° C ± rc, the concentration is 0.4 mol/L of oxalic acid was anodized with an aluminum sheet as an anode, and a current having a current density of 72 mA/cm 2 was passed for 3 hours at room temperature to form an aluminum oxide film 22 having a plurality of holes 23 and an aluminum substrate 21, The thickness of the aluminum oxide film 22 is 200 " m, and the pore diameter of the hole 23 is 100 rnn; 2) Referring to the fourth figure, the aluminum substrate 21 is separated from the aluminum oxide film 22 by vaporization of mercury or hydrochloric acid to form an independent The aluminum oxide film 22, the hole 23 end of the aluminum oxide film 22 is closed, and the closed end is the barrier layer 25; 3) Please refer to the fifth figure 'filling the hole 23 of the aluminum oxide film 22 with the gel 26; 4) Referring to the sixth figure, the barrier layer 25 at the bottom of the aluminum oxide film 22 is etched by sulfuric acid or phosphoric acid, and the barrier layer 25 is removed to form a porous film 2 filled with the gel 26; 5) See the seventh figure, in the porous The bottom of the film 2, that is, the side of the original barrier layer 25 is plated with a metal catalyst 27, so that the porous film 2 is The 23-end of the hole is closed by a metal catalyst 27, and the metal catalyst 27 may be selected from iron, cobalt 'nickel or an alloy thereof, and has a thickness ranging from 1 to 99 nm; 6) Please refer to the eighth figure, which will be a hole in the porous film 2 23 filled gel 26 is removed; 7) Referring to the ninth figure, the carbon nanotube 28 is grown in a hole 23 plated with a metal catalyst 27 at one end by chemical vapor deposition, in the present embodiment, the chemical gas The carbon source gas used in the phase deposition process is acetylene, the metal catalyst 27 is iron, and the carbon nanotube tube 28 is grown at a temperature of 65 ° C to 700 ° C; 8) 第十 Referring to the tenth figure, one layer of the porous film 2 〇 is attached The metal catalyst 27 is removed by dry etching or wet cooking. The thermal module of the present invention is connected to the heat generating component 10 via a thermal interface material 3〇 and a porous film 2〇, and the thermal interface material 3〇 is sealed on the heat dissipating module provided by the present invention. In the sealed space formed by the substrate 51, the porous film 2〇 and the heating element 1〇, the volatilization of the thermal interface material lion is effectively reduced from 1322940, and the thermal interface material 3〇 is prevented from overflowing, so that the heat is connected to the heat and the heat is ensured. Safety. The growth of the holes 23 has a significant decrease in the contact thermal resistance between the carbon nanotubes and the 10 member 10 which are difficult to conduct. Hyun Ux enthusiasm & = above, the invention has indeed met the requirements of the plucking, the law of the proposed law. However, the above description is only a preferred embodiment of the present invention, and it is not possible to apply for a patent fine by 1. Anyone who is familiar with the present technology will be covered by the following inventions. The equivalent modifications or changes shall be covered by the following patents. [Simplified description of the drawings] The first figure is a schematic diagram of the heat dissipation module of the present invention. The second figure is a cross-sectional view of the first-figure-ΙΙ line. The porous _ formation process with carbon nano-f. [Main TL symbol description] 10 21 23 26 28 50 52 porous film aluminum oxide film barrier layer metal catalyst thermal interface material Substrate 20 22 25 27 30 51 Heating element Aluminum substrate Hole gel Carbon nanotube Heat sink Cooling film
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