TWI315751B - A method for plasma etching performance enhancement - Google Patents

A method for plasma etching performance enhancement

Info

Publication number: TWI315751B
Authority: TW; Taiwan
Prior art keywords: plasma etching; performance enhancement; etching performance; enhancement; plasma
Prior art date: 2002-10-11

Application number

TW092128179A

Other languages

Chinese (zh)

Other versions

TW200408732A (en

Inventor

Zhisong Huang

Lumin Li

Reza Sadjadi

Original Assignee

Lam Res Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2002-10-11

Filing date

2003-10-09

Publication date

2009-10-11

2002-11-14 Priority claimed from US10/295,601 external-priority patent/US6833325B2/en

2003-09-29 Priority claimed from US10/674,675 external-priority patent/US7169695B2/en

2003-10-09 Application filed by Lam Res Corp filed Critical Lam Res Corp

2004-06-01 Publication of TW200408732A publication Critical patent/TW200408732A/en

2009-10-11 Application granted granted Critical

2009-10-11 Publication of TWI315751B publication Critical patent/TWI315751B/en

Classifications

- H10P50/283—
- H10P50/73—
- H10W20/084—
- H10W20/085—
- H10P50/244—
- H10W20/076—

TW092128179A 2002-10-11 2003-10-09 A method for plasma etching performance enhancement TWI315751B (en)

Applications Claiming Priority (3)

Application Number	Priority Date	Filing Date	Title
US41780602P	2002-10-11	2002-10-11
US10/295,601 US6833325B2 (en)	2002-10-11	2002-11-14	Method for plasma etching performance enhancement
US10/674,675 US7169695B2 (en)	2002-10-11	2003-09-29	Method for forming a dual damascene structure

Publications (2)

Publication Number	Publication Date
TW200408732A TW200408732A (en)	2004-06-01
TWI315751B true TWI315751B (en)	2009-10-11

Family

ID=46123508

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
TW092128179A TWI315751B (en)	2002-10-11	2003-10-09	A method for plasma etching performance enhancement

Country Status (5)

Country	Link
KR (1)	KR101075045B1 (en)
CN (1)	CN1723549B (en)
IL (2)	IL167935A (en)
SG (1)	SG152920A1 (en)
TW (1)	TWI315751B (en)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US7910489B2 (en) *	2006-02-17	2011-03-22	Lam Research Corporation	Infinitely selective photoresist mask etch
CN104037065A (en) *	2007-11-08	2014-09-10	朗姆研究公司	Pitch reduction using oxide spacer
KR20110002017A (en) *	2008-03-31	2011-01-06	제온 코포레이션	Plasma etching method
US8277670B2 (en) *	2008-05-13	2012-10-02	Lam Research Corporation	Plasma process with photoresist mask pretreatment
CN101988196B (en) *	2009-08-07	2013-09-04	中微半导体设备(上海)有限公司	Deep reactive ion etching method and gas-flow control device thereof
US8304262B2 (en) *	2011-02-17	2012-11-06	Lam Research Corporation	Wiggling control for pseudo-hardmask
US8501499B2 (en) *	2011-03-28	2013-08-06	Tokyo Electron Limited	Adaptive recipe selector
US8598040B2 (en) *	2011-09-06	2013-12-03	Lam Research Corporation	ETCH process for 3D flash structures
JP6030886B2 (en) *	2012-08-09	2016-11-24	東京エレクトロン株式会社	Plasma etching method and plasma etching apparatus
JP6320282B2 (en) *	2014-12-05	2018-05-09	東京エレクトロン株式会社	Etching method
JP6232037B2 (en) *	2015-12-04	2017-11-15	株式会社日本トリム	Electrolyzed water generation system
CN107994026B (en) *	2017-11-16	2020-07-10	长江存储科技有限责任公司	A Process for Protecting Sidewalls in High Aspect Ratio Channel Hole Etching
CN107910294A (en) *	2017-11-24	2018-04-13	睿力集成电路有限公司	The interconnecting construction of semiconductor devices and the interconnection line manufacture method of semiconductor devices
US10453684B1 (en) *	2018-05-09	2019-10-22	Applied Materials, Inc.	Method for patterning a material layer with desired dimensions
US10964587B2 (en) *	2018-05-21	2021-03-30	Tokyo Electron Limited	Atomic layer deposition for low-K trench protection during etch
JP7071884B2 (en) *	2018-06-15	2022-05-19	東京エレクトロン株式会社	Etching method and plasma processing equipment
CN109524415B (en) *	2018-11-14	2021-03-30	长江存储科技有限责任公司	Manufacturing method of three-dimensional memory and three-dimensional memory
CN113035694B (en) *	2019-12-25	2024-09-10	中微半导体设备(上海)股份有限公司	Etching method
US11776811B2 (en)	2020-05-12	2023-10-03	Applied Materials, Inc.	Selective deposition of carbon on photoresist layer for lithography applications
CN114068321A (en) *	2020-07-30	2022-02-18	中国科学院微电子研究所	Hard mask removing method and DRAM manufacturing method
CN117976607B (en) *	2024-03-27	2024-06-21	粤芯半导体技术股份有限公司	Method for preparing trench isolation of semiconductor device and semiconductor device
CN119230396A (en) *	2024-11-28	2024-12-31	上海邦芯半导体科技有限公司	Amorphous carbon layer etching method and semiconductor structure

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US6127258A (en) *	1998-06-25	2000-10-03	Motorola Inc.	Method for forming a semiconductor device
US6025255A (en) *	1998-06-25	2000-02-15	Vanguard International Semiconductor Corporation	Two-step etching process for forming self-aligned contacts
US6326307B1 (en) *	1999-11-15	2001-12-04	Appllied Materials, Inc.	Plasma pretreatment of photoresist in an oxide etch process
US6403491B1 (en) *	2000-11-01	2002-06-11	Applied Materials, Inc.	Etch method using a dielectric etch chamber with expanded process window

2003
- 2003-10-06 KR KR1020107021194A patent/KR101075045B1/en not_active Expired - Fee Related
- 2003-10-06 CN CN200380105311.4A patent/CN1723549B/en not_active Expired - Lifetime
- 2003-10-06 SG SG200702280-9A patent/SG152920A1/en unknown
- 2003-10-09 TW TW092128179A patent/TWI315751B/en not_active IP Right Cessation
2005
- 2005-04-10 IL IL167935A patent/IL167935A/en not_active IP Right Cessation
2008
- 2008-04-08 IL IL190716A patent/IL190716A/en not_active IP Right Cessation

Also Published As

Publication number	Publication date
TW200408732A (en)	2004-06-01
IL167935A (en)	2009-12-24
KR20100108467A (en)	2010-10-06
IL190716A (en)	2011-07-31
CN1723549A (en)	2006-01-18
IL190716A0 (en)	2008-11-03
SG152920A1 (en)	2009-06-29
CN1723549B (en)	2012-01-18
KR101075045B1 (en)	2011-10-19

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Legal Events

Date	Code	Title	Description
2020-07-11	MM4A	Annulment or lapse of patent due to non-payment of fees