IL167935A - Method for plasma etching - Google Patents

Claims (20)

167935/2 What is claimed is:

1. A method for etching a feature in a layer through an etching mask comprising: forming a protective coating on exposed surfaces of the etching mask and vertical sidewalls of the feature with a passivation gas mixture; and etching the feature through the etching mask with reactive etching mixtures containing at least one etching chemical and at least one passivation chemical, wherein the forming the protective coating provides no protective coating on a bottom of the feature.

2. The method, as recited in claim 1, wherein the etching comprises providing an ion bombardment energy of greater than 200 electron volts to the substrate.

3. The method, as recited in claim 2, wherein the etching chemical contains a polymer former and an etch enabler.

4. The method, as recited in claim 3, wherein the passivation and etching are performed in a common plasma processing chamber.

5. The method, as recited in claim 4, wherein the deposition uses a non-directional deposition and the etching step uses a directional etching.

6. The method, as recited in claim 5, wherein the passivation is a non-etching or a negligibly etching deposition.

7. The method, as recited in claim 6, wherein the deposition process is selected from at least one of chemical vapor deposition and sputtering.

8. The method, as recited in claim 7, wherein the layer is only a single layer, wherein the feature is etched only in the single layer during the forming the protective coating and etching the feature, wherein the forming the protective layer and etching are performed in a sequentially alternating fashion at least four times, to etch only the single layer. ^ 167935/2

9. The method, as recited in claim 1, wherein the etching mask is a photoresist mask 193 nm or below generation.

10. The method, as recited in claim 1, wherein at least one passivation chemical releases a polymerizing agent that is more chemically active to the layer than the mask materials.

11. The method, as recited in claim 10, wherein at least one passivation chemical is a hydrofluorocarbon with F:C ratio of less than 2: 1.

12. The method, as recited in claim 10, wherein at least one of the passivation chemical is one of the CH.sub.3 F, CH.sub.2 F.sub.2, C.sub.2 H.sub.5 F, C.sub.2 H.sub.4 F.sub.2, C.sub.3 H.sub.7 F, C.sub.3 H.sub.6 F.sub.2, C.sub.2 H.sub.3 F, CH.sub.4, C.sub.2 H.sub.6, C.sub.2 H.sub.4, C.sub.3 H.sub.8, C.sub.2 H.sub.2.

13. The method, as recited in claim 10, wherein the at least one passivation chemical is a mixture of Ar and CH.sub.3 F.

14. The method, as recited in claim 10, wherein the ion energy provided in the passivation step is greater than 100 electron volts.

15. The method, as recited in claim 1, wherein the layer is only a single layer, wherein the feature is etched only in the single layer during the forming the protective coating and etching the feature.

16. The method, as recited in claim 1, wherein forming the protective coating is accomplished using a selective chemical vapor deposition, which forms the protective coating on exposed surfaces of the etch mask and vertical sidewalls of the feature, but not on the bottom of the feature.

17. The method, as recited in claim 1, wherein the etch mask is a photoresist mask, and wherein the forming a protective coating forms a protective coating that is more etch resistant than the etch mask. 167935/2

18. The method, as recited in claim 17, wherein the forming the protective coating forms a protective coating of amorphous carbon.

19. The method, as recited in claim 17, wherein the forming the protective coating forms a protective coating of polyamorphous silicon.

20. The method, as recited in claim 17, wherein the forming the protective coating forms a pseudo hardmask. For the Applicant, Jeremy M. Ben-David & Co. Ltd. LAMR 90001/2.8