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AU2003244166A1 - Plasma processing method - Google Patents

Plasma processing method

Info

Publication number
AU2003244166A1
AU2003244166A1 AU2003244166A AU2003244166A AU2003244166A1 AU 2003244166 A1 AU2003244166 A1 AU 2003244166A1 AU 2003244166 A AU2003244166 A AU 2003244166A AU 2003244166 A AU2003244166 A AU 2003244166A AU 2003244166 A1 AU2003244166 A1 AU 2003244166A1
Authority
AU
Australia
Prior art keywords
processing method
plasma processing
plasma
processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2003244166A
Inventor
Takashi Enomoto
Kiwamu Fujimoto
Takashi Fuse
Masanobu Honda
Hiroharu Ito
Akinori Kitamura
Akiteru Koh
Kazuya Nagaseki
Tomoyo Yamaguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of AU2003244166A1 publication Critical patent/AU2003244166A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H10P14/683—
    • H10P50/283—
    • H10P50/73—

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
AU2003244166A 2002-06-27 2003-06-24 Plasma processing method Abandoned AU2003244166A1 (en)

Applications Claiming Priority (19)

Application Number Priority Date Filing Date Title
JP2002-187422 2002-06-27
JP2002187422 2002-06-27
JP2002-214628 2002-07-24
JP2002214628 2002-07-24
JP2002-271588 2002-09-18
JP2002271588 2002-09-18
JP2002271589 2002-09-18
JP2002-271589 2002-09-18
US42078802P 2002-10-24 2002-10-24
US60/420,788 2002-10-24
US42356602P 2002-11-05 2002-11-05
US60/423,566 2002-11-05
JP2003-003540 2003-01-09
JP2003003540 2003-01-09
JP2003-110225 2003-04-15
JP2003110225 2003-04-15
JP2003-151416 2003-05-28
JP2003151416 2003-05-28
PCT/JP2003/007960 WO2004003988A1 (en) 2002-06-27 2003-06-24 Plasma processing method

Publications (1)

Publication Number Publication Date
AU2003244166A1 true AU2003244166A1 (en) 2004-01-19

Family

ID=30004139

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2003244166A Abandoned AU2003244166A1 (en) 2002-06-27 2003-06-24 Plasma processing method

Country Status (5)

Country Link
JP (1) JP5008691B2 (en)
CN (1) CN100440449C (en)
AU (1) AU2003244166A1 (en)
TW (1) TWI265569B (en)
WO (1) WO2004003988A1 (en)

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JP4643916B2 (en) * 2004-03-02 2011-03-02 株式会社アルバック Method and apparatus for dry etching of interlayer insulating film
US7712434B2 (en) * 2004-04-30 2010-05-11 Lam Research Corporation Apparatus including showerhead electrode and heater for plasma processing
US20060011578A1 (en) * 2004-07-16 2006-01-19 Lam Research Corporation Low-k dielectric etch
JP4537818B2 (en) * 2004-09-30 2010-09-08 株式会社日立ハイテクノロジーズ Plasma processing method
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JP4602171B2 (en) * 2005-06-22 2010-12-22 東京エレクトロン株式会社 Plasma etching method, plasma etching apparatus, control program, and computer storage medium
JP2007123766A (en) * 2005-10-31 2007-05-17 Tokyo Electron Ltd Etching method, plasma processing apparatus, and storage medium
JP4827081B2 (en) * 2005-12-28 2011-11-30 東京エレクトロン株式会社 Plasma etching method and computer-readable storage medium
JP4928832B2 (en) * 2006-05-25 2012-05-09 東京エレクトロン株式会社 Etching method and computer-readable recording medium
JP5108489B2 (en) * 2007-01-16 2012-12-26 株式会社日立ハイテクノロジーズ Plasma processing method
CN102089867B (en) * 2008-07-11 2013-11-27 东京毅力科创株式会社 Plasma processing apparatus
JP2010041028A (en) * 2008-07-11 2010-02-18 Tokyo Electron Ltd Substrate processing method
JP5128421B2 (en) * 2008-09-04 2013-01-23 東京エレクトロン株式会社 Plasma processing method and resist pattern modification method
JP5207541B2 (en) * 2008-12-26 2013-06-12 富士フイルム株式会社 Liquid repellent film forming method, nozzle plate, ink jet head, and electronic apparatus
JP5486883B2 (en) * 2009-09-08 2014-05-07 東京エレクトロン株式会社 Processing method of workpiece
CN102041508B (en) * 2009-10-23 2012-07-25 中芯国际集成电路制造(上海)有限公司 Groove etching method
JP5781808B2 (en) * 2010-03-31 2015-09-24 東京エレクトロン株式会社 Plasma processing method and plasma processing apparatus
JP5809396B2 (en) * 2010-06-24 2015-11-10 東京エレクトロン株式会社 Substrate processing method and substrate processing apparatus
JP2012028431A (en) * 2010-07-21 2012-02-09 Toshiba Corp Method of manufacturing semiconductor device
JP5642001B2 (en) * 2011-03-25 2014-12-17 東京エレクトロン株式会社 Plasma etching method
JP5142236B1 (en) 2011-11-15 2013-02-13 エルシード株式会社 Etching method
KR20130063871A (en) * 2011-12-07 2013-06-17 삼성전자주식회사 Magnetic device and method of manufacturing the same
JP6050944B2 (en) * 2012-04-05 2016-12-21 東京エレクトロン株式会社 Plasma etching method and plasma processing apparatus
CN103377885B (en) * 2012-04-27 2016-03-16 南亚科技股份有限公司 method of opening
JP6008608B2 (en) * 2012-06-25 2016-10-19 東京エレクトロン株式会社 Resist mask processing method
JP6030886B2 (en) 2012-08-09 2016-11-24 東京エレクトロン株式会社 Plasma etching method and plasma etching apparatus
WO2014042192A1 (en) * 2012-09-13 2014-03-20 東京エレクトロン株式会社 Method for treatment of treated substrate, and plasma treatment device
JP6063264B2 (en) 2012-09-13 2017-01-18 東京エレクトロン株式会社 Method for processing substrate and plasma processing apparatus
KR102148336B1 (en) * 2013-11-26 2020-08-27 삼성전자주식회사 Method of treating a surface, method of fabricating a semiconductor device and the semiconductor device so fabricated
JP6243722B2 (en) * 2013-12-10 2017-12-06 東京エレクトロン株式会社 Etching method
JP6329839B2 (en) * 2014-07-29 2018-05-23 東京エレクトロン株式会社 Plasma processing apparatus and plasma processing method
JP6438831B2 (en) * 2015-04-20 2018-12-19 東京エレクトロン株式会社 Method for etching an organic film
JP2016027658A (en) * 2015-09-07 2016-02-18 エルシード株式会社 Etching method
JP2017092376A (en) 2015-11-16 2017-05-25 東京エレクトロン株式会社 Etching method
JP6643875B2 (en) * 2015-11-26 2020-02-12 東京エレクトロン株式会社 Etching method
US9508556B1 (en) * 2016-01-29 2016-11-29 Taiwan Semiconductor Manufacturing Co., Ltd. Method for fabricating fin field effect transistor and semiconductor device
JP7137927B2 (en) 2017-12-20 2022-09-15 キオクシア株式会社 Semiconductor device manufacturing method
CN109994379B (en) * 2017-12-29 2021-10-19 长鑫存储技术有限公司 Double patterning method and double patterning structure
US11106126B2 (en) * 2018-09-28 2021-08-31 Taiwan Semiconductor Manufacturing Co., Ltd. Method of manufacturing EUV photo masks
JP7175162B2 (en) * 2018-11-05 2022-11-18 東京エレクトロン株式会社 Plasma etching method and plasma etching apparatus for object to be processed
JP7174634B2 (en) * 2019-01-18 2022-11-17 東京エレクトロン株式会社 Method for etching a film
KR102668527B1 (en) * 2022-03-24 2024-05-23 성균관대학교산학협력단 Plasma processing device for etching comprising consumable metal member

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JPH04184916A (en) * 1990-11-20 1992-07-01 Fujitsu Ltd Resist mask forming method and dry etching method
JP2953348B2 (en) * 1991-12-30 1999-09-27 ソニー株式会社 Resist pattern forming method, antireflection film forming method, antireflection film, and semiconductor device
JPH06163479A (en) * 1992-11-17 1994-06-10 Sony Corp Dry etching method
JP3348454B2 (en) * 1993-02-05 2002-11-20 ソニー株式会社 Antioxidant method
JPH07106310A (en) * 1993-09-29 1995-04-21 Victor Co Of Japan Ltd Dry etching method
JP2882301B2 (en) * 1995-01-13 1999-04-12 日本電気株式会社 Method for manufacturing semiconductor device
US5888413A (en) * 1995-06-06 1999-03-30 Matsushita Electric Industrial Co., Ltd. Plasma processing method and apparatus
JPH09306893A (en) * 1996-05-15 1997-11-28 Tokyo Ohka Kogyo Co Ltd Method of removing antireflective film
JPH10261628A (en) * 1996-10-24 1998-09-29 Hyundai Electron Ind Co Ltd Method for manufacturing contact hole of semiconductor device
JPH10233386A (en) * 1997-02-19 1998-09-02 Sony Corp Dry etching method
JPH10268526A (en) * 1997-03-24 1998-10-09 Toshiba Corp Semiconductor device manufacturing method and pattern forming method
US6013582A (en) * 1997-12-08 2000-01-11 Applied Materials, Inc. Method for etching silicon oxynitride and inorganic antireflection coatings
JP2000269198A (en) * 1999-03-19 2000-09-29 Toshiba Corp Plasma processing method and plasma processing apparatus
JP2001110784A (en) * 1999-10-12 2001-04-20 Hitachi Ltd Apparatus and method for plasma treatment
JP3447647B2 (en) * 2000-02-25 2003-09-16 株式会社日立製作所 Sample etching method
JP2002043590A (en) * 2000-07-24 2002-02-08 Fuji Electric Co Ltd Semiconductor device and method of manufacturing the same
JP4605878B2 (en) * 2000-09-25 2011-01-05 パナソニック株式会社 Semiconductor device and manufacturing method thereof

Also Published As

Publication number Publication date
JP2009164626A (en) 2009-07-23
JP5008691B2 (en) 2012-08-22
CN100440449C (en) 2008-12-03
CN1663030A (en) 2005-08-31
TWI265569B (en) 2006-11-01
TW200401365A (en) 2004-01-16
WO2004003988A1 (en) 2004-01-08

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase