TWI388041B - Semiconductor package with heat dissipation structure - Google Patents

Description

Semiconductor package with heat dissipation structure

BACKGROUND OF THE INVENTION 1. Field of the Invention This invention relates to a semiconductor package having a heat sink, and more particularly to a semiconductor package in which a heat sink is used to dissipate heat generated by a semiconductor wafer into the atmosphere.

As the demand for electronic products in terms of function and processing speed increases, semiconductor chips, which are the core components of electronic products, must be equipped with higher-density electronic components and electronic circuits (Electronic Circuits). However, the higher the integrated density of the semiconductor wafer, the greater the heat generated during operation, and if the heat generated is not effectively dissipated, the semiconductor wafer may be damaged. Therefore, the design of a heat sink (Heat Sink or Heat Spreader) in a semiconductor package has been developed to dissipate the heat generated by the semiconductor wafer by the heat sink.

A semiconductor package having a heat sink is disclosed in U.S. Patent Nos. 5,883,430, 5,604,978, 6, 008, 536, 6, 376, 907, 6, 403, 882, 6, 472, 762 and 6, 504, 723. These U.S. patents disclose the use of different types of heat sinks, but it is preferred to expose the encapsulant on the top surface of the heat sink or directly exposed to the atmosphere to achieve better heat dissipation. However, if the heat sink only exposes the encapsulant on the top surface and does not directly adhere to the semiconductor wafer, and the semiconductor wafer and the heat sink are filled with the encapsulant, the epoxy resin (Epoxy Resin) is formed by the encapsulant. Thermal conductivity of the compound compound (Mold Compound) Very poor, so that the heat generated by the semiconductor wafer can not be effectively transmitted to the heat sink and escape to the atmosphere; therefore, it has also been proposed in the prior art to heat the heat sink on the semiconductor wafer to make the semiconductor wafer The heat can be transferred to the heat sink by the heat transfer adhesive with better thermal conductivity to escape to the atmosphere, as shown in Fig. 8.

The heat sink 80 of the semiconductor package 8 shown in FIG. 8 is bonded to the semiconductor wafer 82 by the heat dissipating adhesive 81. However, the heat dissipating adhesive 81 is an expensive material, which can improve the heat dissipation efficiency, but causes a large packaging cost. Moreover, the coefficient of thermal expansion (CTE) of the heat sink 80, the heat sink 81 and the semiconductor wafer 82 are different, so in the temperature cycle of the packaging process, the coefficient of thermal expansion is often different (CTE). The thermal stress generated by Mismatch causes the interface between the heat sink 80 and the heat sink 81 and/or the interface between the heat sink 81 and the semiconductor wafer 82 to be delaminated. Once the delamination occurs, the semiconductor The heat generated by the wafer 82 cannot be effectively dissipated, and the reliability of the finished product is also affected. In addition, when the heat sink 80 is adhered to the semiconductor wafer 82 by the heat sink 81, since the heat sink 81 is not cured, it is difficult to control the heat sink 80 relative to the semiconductor wafer 82 or the substrate 83 carrying the semiconductor wafer 82. The gradation of the heat sink 80 affects the appearance of the finished product, and the encapsulating compound forming the encapsulant 84 for covering the heat sink 80 and the semiconductor wafer 82 overflows to the heat dissipation. The top surface 80a of the sheet 80 affects the heat dissipation efficiency of the heat sink 80.

No. 5,166,772 discloses a semiconductor package having a mesh metal cover. As shown in FIG. 9, the semiconductor package 9 disclosed in U.S. Patent No. 5,166,772 is attached to a substrate 90 with a mesh metal cover (Meshed Metallic Lass) 92, and the semiconductor wafer 91 is housed therein, and then packaged. The colloid 93 completely covers the mesh metal cover 92 and the semiconductor wafer 91. The semiconductor package 9 is provided by the mesh metal cover 92 to shield electromagnetic interference (EMI) generated by the semiconductor wafer 91 or electromagnetic interference generated by an external device, because the mesh metal cover 92 is Covered in the encapsulant 93, there is no known problem in that a metal cover is added to the package to cause an excessive volume and an increase in cost.

However, although the semiconductor package 9 shown in FIG. 9 can solve the problem of electromagnetic interference, since the mesh metal cover 92 is completely covered by the encapsulant 93 and cannot be connected to the semiconductor wafer 91, the semiconductor The heat generated by the wafer 91 is transmitted through a poorly thermally conductive encapsulant, so that the heat generated by the highly integrated semiconductor wafer cannot be effectively dissipated, thereby damaging the semiconductor wafer 91; and the mesh The metal cover 92 is completely covered in the encapsulant 93 without any exposed portion of the atmosphere, since the heat dissipation effect cannot be effectively produced. What is more, U.S. Patent No. 6,504,723, the entire disclosure of which is incorporated herein by reference in its entirety, the entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all The device disclosed is preferred; however, the device disclosed in U.S. Patent No. 6,504,723 still has the aforementioned level of difficulty in controlling the use of expensive heat-dissipating glue and metal cover. problem.

Therefore, how to combine the heat sink and the semiconductor wafer does not cause the aforementioned problems, which is an urgent problem to be solved in the packaging industry.

In order to solve the above problems, the present invention provides a semiconductor package with a heat dissipation structure, which can reduce the cost of packaging by eliminating the use of expensive heat-dissipating glue, can avoid the occurrence of delamination, improve the heat dissipation efficiency, and can solve the heat sink adhesion. When the semiconductor wafer is mounted, the flatness of the heat sink is not easily controlled.

The semiconductor package with a heat dissipation structure provided by the present invention comprises a substrate, at least one semiconductor wafer disposed on the substrate and electrically connected to the substrate; and a heat dissipation structure adhered to the semiconductor wafer, the heat dissipation structure A first heat dissipating member combined with the adhesive and having a top surface and a bottom surface, and a second heat dissipating member having a top surface and a bottom surface bonded to the adhesive (Second Heat Dissipating) Member, wherein the heat dissipating structure is adhered to the semiconductor wafer by an adhesive, so that the adhesive is located between the second heat dissipating member and the semiconductor wafer, and the first heat dissipating member is respectively connected to the second a bottom surface of the heat dissipating member and the semiconductor wafer, and the first heat dissipating member has a plurality of passages penetrating through the top surface and the bottom surface of the first heat dissipating member for filling the adhesive, and the thickness of the adhesive is equivalent to the first heat dissipation The height of the piece from the top surface to the bottom surface allows the adhesive to be bonded to the second heat sink and the semiconductor wafer, respectively, and the top surface and the bottom surface of the first heat sink are simultaneously touched To a second heat sink and the semiconductor wafer.

The first heat dissipating member is made of a metal material having good thermal conductivity, and its shape The shape is a mesh-shaped metal sheet body, a metal sheet body formed with a plurality of openings, a sheet-like structure composed of a wavy metal wire or a sheet-like structure in which a plurality of short metal wires are formed in a curved shape. The foregoing shapes are all required to have a plurality of channels formed therein, so that the adhesive can be filled in each of the channels to form a good bonding relationship with the first heat dissipating member, and at the same time, the upper surface of the adhesive and the first heat dissipating member can be formed. The top surface of the adhesive is flush and the lower surface of the adhesive is flush with the bottom surface of the first heat dissipating member, so that the adhesive can be effectively bonded to the second heat dissipating member and the semiconductor wafer, respectively. Therefore, since the first heat dissipating member is combined with the adhesive, the thermal effect generated in the subsequent temperature cycle can be effectively released, and the delamination between the adhesive and the semiconductor wafer and the adhesive and the second heat dissipating member can be avoided. phenomenon. At the same time, since the first heat dissipating member is respectively connected to the second heat dissipating member and the semiconductor wafer, the heat generated by the semiconductor chip can be transferred to the second heat dissipating member by the first heat dissipating member, and the second heat dissipating portion is The top surface of the device is dissipated into the atmosphere, so the heat dissipation efficiency of the semiconductor package of the present invention can be further improved. Furthermore, since the first heat dissipating member is interposed between the second heat dissipating member and the semiconductor wafer, when the second heat dissipating member is adhered to the semiconductor wafer by the adhesive, the second heat dissipating member is the first heat dissipating member. Supported, there is no concern about tilting, and there is no Appearance Issue. In addition, the thermal conductivity of the first heat dissipating member is better than that of the adhesive or the conventional thermal dissipating adhesive, so that the use of the conventional thermal dissipating adhesive can be eliminated, and the packaging cost can be reduced.

The area of the first heat sink is equivalent to or larger than the area where the adhesive is applied. When the area of the first heat dissipating member is larger than the laying area of the adhesive, at least one side or a portion of the first heat dissipating member can extend to the substrate And electrically connected to a passive component or a ground pad or a ground ring on the substrate to further improve the electrical properties of the semiconductor package of the present invention; in addition, the first heat sink is also The extension is extended to the extent that the semiconductor wafer is covered, and the semiconductor wafer is provided with an EMI resistance.

The embodiments of the present invention are described below by way of specific embodiments, and those skilled in the art can readily understand the functions and features of the present invention from the disclosure of the present disclosure.

It should be noted that the "top surface" and "bottom surface" and "upper surface" and "lower surface" described in this specification are not absolute spatial concepts, but vary with the spatial relationship of the constituent elements, that is, When inverting the semiconductor package shown in the drawings, the "top surface" becomes the "bottom surface" and the "bottom surface" becomes the "top surface", and the others are the same. Therefore, the use of the terms "top surface", "bottom surface", "upper surface" and "lower surface" is used to describe the connection relationship between constituent elements in the semiconductor package disclosed in the present invention, so as to be disclosed by the present invention. The semiconductor package has reasonable variations and substitutions within the equivalent scope, and is not intended to limit the scope of the invention to a particular aspect.

First embodiment

A first embodiment of the present invention is a cross-sectional view of a semiconductor package according to a first embodiment of the present invention. The semiconductor package 1 of the first embodiment is composed of a substrate 10, a semiconductor wafer 11 adhered to the substrate 10, a heat dissipation structure 12 adhered to the semiconductor wafer 11, and a package formed on the substrate 10. a package colloid covering the semiconductor wafer 11 and a portion of the heat dissipation structure 12 13 members.

The substrate 10 is a conventional flip-chip substrate in this embodiment, so that the semiconductor wafer 11 is electrically connected to the upper surface 100 of the substrate 10 by a Flip Chip by a plurality of solder bumps 14 . At the same time, at the same time, relative to the lower surface 101 of the upper surface 100, a plurality of Arrays of solder balls 15 are arranged to enable the semiconductor wafer 11 to be borrowed. The solder ball 15 is electrically connected to an external device such as a printed circuit board. Since the substrate 10 is a conventional one, and the semiconductor wafer 11 is provided on the substrate 10 and the solder ball in a flip chip manner, it is also a conventional technique, and thus will not be described herein.

The heat dissipation structure 12 is composed of an adhesive 120, a first heat dissipation member 121 coupled to the adhesive 120, and a second heat dissipation member 122 bonded to the adhesive 120. The adhesive 120 is used by a conventional manufacturer such as Silver Paste or Epoxy Resin Adhesive. In the embodiment, the first heat dissipating member 121 is a mesh sheet formed by a metal wire, and has a top surface 121a and an opposite bottom surface 121b, as shown in FIG. 1B. The first heat sink 121 is The wire is made of a metal wire, so that there are a plurality of meshes (Meshes), and a channel 121c for the adhesive 120 to pass through and fill therein is formed, so that the adhesive 120 can be provided with the first heat dissipation by the channels 121c. The piece 121 is fully combined. At the same time, the first heat dissipating member 121 has the same height as the thickness H of the adhesive 120. After the adhesive 120 is combined with the first heat dissipating member 121, the upper surface 120a of the adhesive 120 and the first heat dissipating member 121 The top surface 121a can be flush, and the lower surface 120b of the adhesive 120 and the first heat dissipation The bottom surface 121b of the member 121 can be flushed so that the first heat dissipating member 121 can abut the bottom surface 122b of the second heat dissipating member 122 and the semiconductor wafer 11 with the top surface 121a and the bottom surface 121b, respectively. The generated heat can be efficiently transmitted to the second heat sink 122 via the first heat sink 121, and the heat is dissipated into the atmosphere by the second heat sink 122. In addition, since the upper surface 120a of the adhesive 120 is flush with the top surface 121a of the first heat sink 121 and exposed outside the channel (mesh) 121c of the first heat sink 121, the adhesive 120 can be effectively used. The second heat dissipating member 122 is adhered to the heat dissipating structure 12; and the lower surface 120b of the adhesive 120 is flush with the bottom surface 121b of the first heat dissipating member 121, and is exposed from the channel 121c of the first heat dissipating member 121. Therefore, the heat dissipation structure 12 can be effectively adhered to the semiconductor wafer 11 by the adhesive 120.

The second heat dissipating member 122 is formed of a metal sheet made of a metal material such as copper or an alloy thereof, and the thickness thereof is not limited, and is determined by design choice. The top surface 122a of the second heat dissipating member 122 is exposed to the outside of the encapsulant 13 after the encapsulant 13 is formed, and the bottom surface 122b is in contact with the first heat dissipating member 121. Therefore, the semiconductor wafer 11 is The generated heat energy can be transmitted from the first heat sink 121 to the second heat sink 122 as described above, and then escaped by the second heat sink 122 exposed to the top surface 122a of the atmosphere.

In addition, as shown in the figure, after the heat dissipating structure 12 is adhered to the semiconductor wafer 11 by the adhesive 120, the adhesive 120 and the first heat dissipating member 121 are interposed on the second heat dissipating member 122 and the semiconductor wafer 11. between. The area of the first heat sink 121 is smaller than that of the adhesive 120 or the semiconductor wafer 11, so that the first heat sink 121 is completely bonded to the adhesive 120, as shown in FIG. 1A; the area of the first heat sink 121 It is also required to have an area corresponding to the adhesive 120 or the semiconductor wafer 11, so that the periphery of the first heat dissipating member 121 is exposed to the adhesive 120, but for simplification of the description, it will not be shown here; of course, The area of the first heat sink 121 is greater than the area of the adhesive 120 or the semiconductor wafer 11. In this case, the first heat sink 121 can be combined with the encapsulant 13 and can be coupled to the encapsulant 13 by the first heat sink 121. The combination of the heat-dissipating structure 12 and the encapsulant 13 is partially reinforced, but it is not illustrated here for the sake of simplicity. It should be noted that the first heat dissipating member 121 can also be extended to the substrate 10 to form a grounding relationship with the substrate 10. This structure will be described in detail in another embodiment.

It can be seen from the above description that the heat dissipation structure 12 in the semiconductor package 1 of the first embodiment of the present invention is combined with the first heat dissipation member 121 in the adhesive 120 for bonding the second heat dissipation member 122 and the semiconductor wafer 11. The first heat dissipating member 121 has the same height design as the thickness H of the adhesive 120, so that the first heat dissipating member 121 can simultaneously abut the top surface 122a to expose the second heat dissipating member 122 of the encapsulant 13 and the semiconductor wafer 11. Therefore, the heat generated by the semiconductor wafer 11 can be effectively dissipated into the atmosphere through the heat dissipation path formed by the first heat sink 121 and the second heat sink 122, so that it is not necessary to use an expensive heat sink adhesive as an adhesive to achieve the desired heat dissipation. The effect is to bond the second heat sink 122 and the semiconductor wafer 11 with a conventional adhesive, which can reduce the packaging cost. Again, because of the first The heat member 121 is formed with a plurality of channels 121c for the adhesive 120 to be filled and passed therethrough, so that the influence of the generation of thermal stress on the adhesive 120 in the subsequent temperature cycle can be reduced by the metal characteristic of the first heat sink 121, thereby avoiding The influence of the thermal stress causes the bonding interface between the adhesive 120 and the semiconductor wafer 11 and the bonding interface between the adhesive 120 and the second heat sink 122 to delaminate, and the heat dissipation efficiency caused by the delamination is deteriorated and trusted. Reliability Concern does not happen. In addition, since the first heat dissipating member 121 is interposed between the second heat dissipating member 122 and the semiconductor wafer 11, and the first heat dissipating member 121 is bonded to the adhesive 120, the second heat dissipating member 122 is bonded to the semiconductor by the adhesive 120. When the wafer 11 is on the surface, the support of the first heat dissipating member 121 does not cause a tilt (Tilt) phenomenon, and the conventional technology effectively solves the problem that only the adhesive layer between the heat sink and the semiconductor wafer is not easy to control the level of the heat sink. problem.

Second embodiment

As shown in Fig. 2A, a cross-sectional view of a semiconductor package in accordance with a second embodiment of the present invention. As shown, the structure of the semiconductor package 2 of the second embodiment is substantially the same as that disclosed in the first embodiment, except that the first heat sink 221 is formed into a wavy sheet structure. As can be seen from the perspective view of the first heat dissipating member 221 of FIG. 2B, the first heat dissipating member 221 is formed with a plurality of openings 221d, which together with the grooves 221e formed between any two adjacent waves constitute the adhesive 220. Fill in the passages. The undulating first heat dissipating member 221 is identical to the first heat dissipating member 121 disclosed in the first embodiment, and has a wave-like structure that can be elastically deformed and extended, so that the first heat dissipating member 221 can have Elastically placed Between the second heat sink 222 and the semiconductor wafer 21, the occurrence of the semiconductor wafer 21 is inadvertently damaged when the heat dissipation structure 22 is adhered to the semiconductor wafer 21 via the adhesive 220.

Third embodiment

As shown in Fig. 3A, a cross-sectional view of a semiconductor package in accordance with a third embodiment of the present invention. As shown in the figure, the structure of the semiconductor package 3 of the third embodiment is substantially the same as that disclosed in the first embodiment, except that the first heat sink 321 is formed into a flat metal sheet. As shown in the perspective view of the first heat sink 321 of FIG. 3B, the first heat sink 321 is formed with a plurality of channels 321c for the adhesive 320 to pass through and fill therein. The channel 321c is rectangular in the figure. Any geometric shape such as a circle, an ellipse, or a polygon is also applicable.

Fourth embodiment

As shown in Fig. 4A, a cross-sectional view of a semiconductor package in accordance with a fourth embodiment of the present invention. As shown in the figure, the structure of the semiconductor package 4 of the fourth embodiment is substantially the same as that disclosed in the first embodiment, except that the first heat dissipating member 421 is formed by a plurality of irregular shapes or rules. The shape is composed of short metal wires. As can be seen from the perspective view of the first heat dissipating member 421 of the fourth embodiment shown in FIG. 4B, the first heat dissipating member 421 which is pressed and synthesized by a plurality of irregularly shaped or curved regular shaped short metal wires may have The plural also has an irregularly sized passage 421c for the adhesive 420 to pass through and fill therein. The short metal wire constituting the first heat dissipating member 421 can use any metal material to generate waste materials or scraps after processing, thereby reducing the material cost; and because the short metal wires are interlaced The first heat dissipating member 421 is formed, so that the first heat dissipating member 421 can also have good elastic deformation characteristics. The heat dissipating structure 42 composed of the adhesive 420, the first heat dissipating member 421 and the second heat dissipating member 422 is adhered to the heat dissipating agent 420. When bonded to the semiconductor wafer 41, the semiconductor wafer 41 is not damaged.

Fifth embodiment

As shown in FIG. 5A, a cross-sectional view of a semiconductor package according to a fifth embodiment of the present invention. As shown, the structure of the semiconductor package 5 of the fifth embodiment is substantially the same as that disclosed in the first embodiment. The difference is that the first heat dissipating member 521 is formed of a metal sheet body having a plurality of channels 521c, and has a flat portion 521f and an extending portion 521g extending outward from the flat portion 521f as shown in FIG. 5B. The extending portion 521g extends to the substrate 50 to be electrically connected to the ground pad or the grounding ring on the substrate 50. The first heat sink 521 and the substrate 50 are grounded by the extending portion 521g, and the semiconductor package is lifted. 5 Electrical properties (Electrical Performance). At the same time, the first heat dissipating member 521 composed of the extending portion 521g and the flat portion 521f forms a cover covering the semiconductor wafer 51, and can shield electromagnetic interference (EMI), thereby further enhancing the semiconductor package. The electrical properties of piece 5. Of course, the extending portion 521g can also be grounded to a passive component (not shown) disposed on the substrate 50, and can also achieve a grounding effect; and the extending portion 521g can also be formed only on one side of the planar portion 521f, or Both sides (not shown) are formed on the four sides of the flat portion 521f.

Sixth embodiment

As shown in FIG. 6, the semiconductor package of the sixth embodiment of the present invention A cross-sectional view of the piece. As shown in the figure, the structure of the semiconductor package 6 of the sixth embodiment is substantially the same as that of the first embodiment, except that the semiconductor wafer 61 is electrically connected to the substrate by a plurality of bonding wires 64. 60. In order to avoid the short circuit problem caused by the heat sink structure 62 formed by the adhesive 620, the first heat sink 621 and the second heat sink 622 touching or interfering with the bonding wire 64, a dummy wafer is bonded on the semiconductor wafer 61. (Dummy Chip) 66, the heat dissipation structure 62 is adhered to the dummy wafer 66 by the adhesive 620, so that the heat dissipation structure 62 does not touch or interfere with the bonding wire 64. Moreover, the dummy wafer 66 is made of waste wafer or waste wafer, and is the same as the semiconductor wafer 61. Therefore, the heat generated by the semiconductor wafer 61 can be effectively transferred to the heat dissipation structure 62 by the dummy wafer 66 without Affects the efficiency of heat dissipation. It is to be understood that the first heat dissipating member 621 shown in the drawings is in the form of a metal sheet body having a passage, which is merely for exemplification, and other variations or modifications of the disclosed aspects or equivalents thereof are also applicable.

Seventh embodiment

As shown in Fig. 7, a cross-sectional view of a semiconductor package of a seventh embodiment of the present invention. As shown in the figure, the structure of the semiconductor package 7 of the seventh embodiment is substantially the same as that disclosed in the first embodiment, except that the second heat sink 722 is formed as a metal cover (Metallic Casing). After the adhesive 720 is adhered to the semiconductor wafer 71, the semiconductor wafer 71 is covered, and the leg portion 722e of the second heat sink 722 is adhered to the substrate 70 by the adhesive material 77. 71 is hermetically sealed for the second heat sink 722, so that it is not necessary to form an encapsulant to cover the semiconductor wafer 71.

The first heat dissipating member 721 shown in this embodiment is also presented in the form of a metal piece having a channel, which is merely for illustration, and other aspects of the present invention or equivalent changes or changes thereof. Also applicable.

The above-described embodiments are merely illustrative of the principles of the invention and its effects, and are not intended to limit the invention. Modifications and variations of the above-described embodiments can be made by those skilled in the art without departing from the spirit and scope of the invention. Therefore, the scope of protection of the present invention should be as set forth in the scope of the claims described below.

1, 2, 3, 4, 5, 6, 7, 8, 9‧‧‧ semiconductor packages

10, 50, 60, 70, 83, 90‧‧‧ substrates

100, 120a‧‧‧ upper surface

101, 120b‧‧‧ lower surface

11, 21, 41, 61, 71, 82, 91‧‧‧ semiconductor wafers

12, 62‧‧‧ heat dissipation structure

120, 220, 320, 420, 620, 720‧‧‧ adhesives

121, 221, 321, 421, 521, 621, 721‧‧‧ first heat sink

121a, 122a‧‧‧ top

121b, 122b‧‧‧ bottom

121c, 321c, 421c, 521c‧‧‧ channels

122, 222, 422, 622, 722‧‧‧ second heat sink

13,84,93‧‧‧Package colloid

14‧‧‧ solder bumps

15‧‧‧ solder balls

22, 42‧‧‧ heat dissipation structure

221d‧‧‧Opening

221e‧‧‧ trench

521f‧‧‧Flat Department

521g‧‧‧Extension

64‧‧‧welding line

66‧‧‧false wafer

722e‧‧‧foot

77‧‧‧Adhesive material

80‧‧‧ Heat sink

80a‧‧‧ top

81‧‧‧Solution glue

92‧‧‧Metal cover

1A is a cross-sectional view of a semiconductor package of a first embodiment of the present invention; FIG. 1B is a perspective view of the first heat sink shown in FIG. 1A; and FIG. 2A is a semiconductor package of a second embodiment of the present invention; 2B is a perspective view of the first heat sink illustrated in FIG. 2A; FIG. 3A is a cross-sectional view of the semiconductor package of the third embodiment of the present invention; FIG. 3B is a diagram of FIG. 3A FIG. 4A is a cross-sectional view of a semiconductor package according to a fourth embodiment of the present invention; FIG. 4B is a perspective view of the first heat sink illustrated in FIG. 4A 5A is a cross-sectional view of a semiconductor package of a fifth embodiment of the present invention; FIG. 5B is a perspective view of the first heat sink shown in FIG. 5A; and FIG. 6 is a semiconductor of a sixth embodiment of the present invention; Figure 7 is a cross-sectional view of a semiconductor package of a seventh embodiment of the present invention; Figure 8 is a cross-sectional view of a conventional semiconductor package; and Figure 9 is a cross-sectional view of another conventional semiconductor package.

1‧‧‧Semiconductor package

10‧‧‧Substrate

100, 120a‧‧‧ upper surface

101, 120b‧‧‧ lower surface

11‧‧‧Semiconductor wafer

12‧‧‧ Heat dissipation structure

120‧‧‧Adhesive

121‧‧‧First heat sink

121a, 122a‧‧‧ top

121b, 122b‧‧‧ bottom

122‧‧‧second heat sink

13‧‧‧Package colloid

14‧‧‧ solder bumps

15‧‧‧ solder balls

Claims (15)

A semiconductor package having a heat dissipation structure includes: a substrate; at least one semiconductor wafer disposed on the substrate and electrically connected to the substrate; and the heat dissipation structure adhered to the semiconductor wafer, the heat dissipation structure comprising: An adhesive; a first heat sink combined with the adhesive and having a top surface and a bottom surface, the first heat sink having a plurality of passages connecting the top surface and the bottom surface for filling the adhesive; and bonding to the adhesive a second heat dissipating member on the adhesive, wherein the adhesive and the first heat dissipating member are interposed between the second heat dissipating member and the semiconductor wafer, so that the second heat dissipating member and the semiconductor wafer can directly contact the adhesive Bonding. The semiconductor package having a heat dissipation structure according to claim 1, further comprising an encapsulant formed on the substrate to cover the semiconductor wafer and a portion of the heat dissipation structure, but the second heat dissipation member of the heat dissipation structure is The encapsulant is exposed on the top surface. A semiconductor package having a heat dissipation structure according to claim 1, further comprising a plurality of solder balls implanted on the substrate, wherein the substrate is provided with a surface of the solder ball relative to a surface on which the semiconductor wafer is disposed . The semiconductor package with a heat dissipation structure according to claim 1, wherein the adhesive filled in the first heat dissipation member can be exposed a top surface and a bottom surface of the first heat dissipating member, wherein a height from a top surface to a bottom surface of the first heat dissipating member is the same as a thickness of the adhesive, and a top surface and a bottom surface of the first heat dissipating member are respectively abutted to the The second heat sink and the semiconductor wafer. The semiconductor package having a heat dissipation structure according to claim 1, wherein the first heat dissipation member is a mesh metal sheet having a plurality of meshes as the channel. A semiconductor package having a heat dissipation structure according to claim 5, wherein the mesh metal sheet system has a wavy wire. A semiconductor package having a heat dissipation structure according to claim 1, wherein the first heat dissipation member is a metal sheet having a plurality of openings for the channel. A semiconductor package having a heat dissipation structure according to claim 7 of the patent application, wherein the metal piece system has a wave shape. A semiconductor package having a heat dissipation structure according to claim 1, wherein the first heat dissipation member is composed of a plurality of regular or irregular short metal wires. A semiconductor package having a heat dissipation structure according to claim 1, wherein the first heat dissipation member has an outwardly extending extension. A semiconductor package having a heat dissipation structure according to claim 10, wherein the extension extends to the substrate to form a ground relationship with the substrate. The semiconductor package with a heat dissipation structure according to claim 1, wherein the first heat dissipation member is a metal cover for the half The conductor wafer is hermetically sealed on the substrate. A semiconductor package having a heat dissipation structure according to claim 1, wherein the semiconductor wafer is electrically connected to the substrate by a plurality of solder bumps in a flip chip manner. A semiconductor package having a heat dissipation structure according to claim 1, wherein the semiconductor wafer is electrically connected to the substrate by a plurality of bonding wires. A semiconductor package having a heat dissipation structure according to claim 14 of the patent application, comprising a dummy wafer adhered to the semiconductor wafer, wherein the heat dissipation structure is adhered to the dummy wafer.