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TWI367429B - A plasma chamber utilizing an enhanced process and profile simulator algorithms and a method for operating the same - Google Patents

A plasma chamber utilizing an enhanced process and profile simulator algorithms and a method for operating the same

Info

Publication number
TWI367429B
TWI367429B TW094129688A TW94129688A TWI367429B TW I367429 B TWI367429 B TW I367429B TW 094129688 A TW094129688 A TW 094129688A TW 94129688 A TW94129688 A TW 94129688A TW I367429 B TWI367429 B TW I367429B
Authority
TW
Taiwan
Prior art keywords
operating
same
plasma chamber
enhanced process
chamber utilizing
Prior art date
Application number
TW094129688A
Other languages
Chinese (zh)
Other versions
TW200620016A (en
Inventor
David Cooperberg
Vahid Vahedi
Original Assignee
Lam Res Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/932,926 external-priority patent/US7139632B2/en
Application filed by Lam Res Corp filed Critical Lam Res Corp
Publication of TW200620016A publication Critical patent/TW200620016A/en
Application granted granted Critical
Publication of TWI367429B publication Critical patent/TWI367429B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
TW094129688A 2004-09-01 2005-08-30 A plasma chamber utilizing an enhanced process and profile simulator algorithms and a method for operating the same TWI367429B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/932,926 US7139632B2 (en) 1998-03-03 2004-09-01 Enhanced process and profile simulator algorithms

Publications (2)

Publication Number Publication Date
TW200620016A TW200620016A (en) 2006-06-16
TWI367429B true TWI367429B (en) 2012-07-01

Family

ID=36154254

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094129688A TWI367429B (en) 2004-09-01 2005-08-30 A plasma chamber utilizing an enhanced process and profile simulator algorithms and a method for operating the same

Country Status (4)

Country Link
JP (1) JP5112624B2 (en)
KR (1) KR101273190B1 (en)
CN (1) CN100565788C (en)
TW (1) TWI367429B (en)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5872141B2 (en) 2010-05-20 2016-03-01 東京エレクトロン株式会社 Substrate processing apparatus, control apparatus and control method thereof
US8501499B2 (en) * 2011-03-28 2013-08-06 Tokyo Electron Limited Adaptive recipe selector
CN103020349B (en) * 2012-12-08 2015-05-06 清华大学 Modeling method of etching yield in plasma etching process
US9547233B2 (en) * 2013-03-14 2017-01-17 Kla-Tencor Corporation Film-growth model using level sets
CN103440361B (en) * 2013-07-19 2016-02-24 清华大学 The modeling method of yield is etched in a kind of plasma etch process
US9606519B2 (en) * 2013-10-14 2017-03-28 Applied Materials, Inc. Matching process controllers for improved matching of process
JP6177671B2 (en) * 2013-11-25 2017-08-09 ソニーセミコンダクタソリューションズ株式会社 Simulation method, simulation program, and simulator
US10197908B2 (en) * 2016-06-21 2019-02-05 Lam Research Corporation Photoresist design layout pattern proximity correction through fast edge placement error prediction via a physics-based etch profile modeling framework
US10572697B2 (en) 2018-04-06 2020-02-25 Lam Research Corporation Method of etch model calibration using optical scatterometry
WO2019200015A1 (en) 2018-04-10 2019-10-17 Lam Research Corporation Optical metrology in machine learning to characterize features
US11624981B2 (en) 2018-04-10 2023-04-11 Lam Research Corporation Resist and etch modeling
CN114202654B (en) * 2022-02-17 2022-04-19 广东皓行科技有限公司 Entity target model construction method, storage medium and computer equipment

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2927226B2 (en) * 1995-12-18 1999-07-28 日本電気株式会社 Shape simulation method
US6151532A (en) * 1998-03-03 2000-11-21 Lam Research Corporation Method and apparatus for predicting plasma-process surface profiles
US6255221B1 (en) * 1998-12-17 2001-07-03 Lam Research Corporation Methods for running a high density plasma etcher to achieve reduced transistor device damage
JP2002050553A (en) * 2000-07-31 2002-02-15 Toshiba Corp Computer-readable storage medium storing shape simulation method and shape simulation program

Also Published As

Publication number Publication date
CN1812048A (en) 2006-08-02
KR101273190B1 (en) 2013-06-14
JP5112624B2 (en) 2013-01-09
JP2006074046A (en) 2006-03-16
KR20060050931A (en) 2006-05-19
TW200620016A (en) 2006-06-16
CN100565788C (en) 2009-12-02

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees