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TWI364980B - Solid-state imaging device and imaging apparatus - Google Patents

Solid-state imaging device and imaging apparatus Download PDF

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Publication number
TWI364980B
TWI364980B TW096148102A TW96148102A TWI364980B TW I364980 B TWI364980 B TW I364980B TW 096148102 A TW096148102 A TW 096148102A TW 96148102 A TW96148102 A TW 96148102A TW I364980 B TWI364980 B TW I364980B
Authority
TW
Taiwan
Prior art keywords
signal
pixel
column
addition
count
Prior art date
Application number
TW096148102A
Other languages
English (en)
Chinese (zh)
Other versions
TW200845735A (en
Inventor
Shizunori Matsumoto
Yasuaki Hisamatsu
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of TW200845735A publication Critical patent/TW200845735A/zh
Application granted granted Critical
Publication of TWI364980B publication Critical patent/TWI364980B/zh

Links

Classifications

    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/616Noise processing, e.g. detecting, correcting, reducing or removing noise involving a correlated sampling function, e.g. correlated double sampling [CDS] or triple sampling
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10Integrated devices
    • H10F39/12Image sensors
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50Control of the SSIS exposure
    • H04N25/53Control of the integration time
    • H04N25/533Control of the integration time by using differing integration times for different sensor regions
    • H04N25/534Control of the integration time by using differing integration times for different sensor regions depending on the spectral component
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70SSIS architectures; Circuits associated therewith
    • H04N25/76Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
TW096148102A 2007-01-17 2007-12-14 Solid-state imaging device and imaging apparatus TWI364980B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007008104 2007-01-17
JP2007291467A JP4786631B2 (ja) 2007-01-17 2007-11-09 固体撮像装置、撮像装置

Publications (2)

Publication Number Publication Date
TW200845735A TW200845735A (en) 2008-11-16
TWI364980B true TWI364980B (en) 2012-05-21

Family

ID=39758092

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096148102A TWI364980B (en) 2007-01-17 2007-12-14 Solid-state imaging device and imaging apparatus

Country Status (4)

Country Link
JP (2) JP4786631B2 (ja)
KR (1) KR101439227B1 (ja)
CN (1) CN101227551B (ja)
TW (1) TWI364980B (ja)

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KR101520665B1 (ko) 2008-07-14 2015-05-15 엘지전자 주식회사 의류처리장치의 운전 제어방법
JP5317591B2 (ja) * 2008-09-01 2013-10-16 キヤノン株式会社 撮像装置
JP5165520B2 (ja) 2008-10-01 2013-03-21 ソニー株式会社 固体撮像装置、撮像装置、および固体撮像装置のad変換方法
JP4640507B2 (ja) * 2009-01-06 2011-03-02 ソニー株式会社 固体撮像装置、固体撮像装置の信号処理方法、および撮像装置
JP5636694B2 (ja) * 2009-04-03 2014-12-10 ソニー株式会社 電子機器、ad変換装置、ad変換方法
WO2010137244A1 (ja) * 2009-05-29 2010-12-02 パナソニック株式会社 固体撮像装置及びカメラ
JP5220777B2 (ja) 2010-01-21 2013-06-26 オリンパス株式会社 画像処理装置、撮像装置、プログラム及び画像処理方法
JP2011248576A (ja) * 2010-05-26 2011-12-08 Olympus Corp 画像処理装置、撮像装置、プログラム及び画像処理方法
WO2012144215A1 (ja) * 2011-04-21 2012-10-26 パナソニック株式会社 固体撮像装置
JP5871531B2 (ja) * 2011-09-08 2016-03-01 キヤノン株式会社 撮像装置、撮像システム
US8730081B2 (en) * 2012-03-19 2014-05-20 Omnivision Technologies, Inc. Calibration in multiple slope column parallel analog-to-digital conversion for image sensors
KR101893406B1 (ko) * 2012-03-28 2018-08-30 삼성전자 주식회사 카메라의 이미지처리 장치 및 방법
FR2989219B1 (fr) 2012-04-04 2015-05-29 Commissariat Energie Atomique Circuit de traitement de pixels
JP6037170B2 (ja) * 2013-04-16 2016-11-30 ソニー株式会社 固体撮像装置およびその信号処理方法、並びに電子機器
JP2016519308A (ja) * 2013-05-10 2016-06-30 コーニンクレッカ フィリップス エヌ ヴェKoninklijke Philips N.V. 直接変換放射線検出器デジタル信号処理装置
JP6494160B2 (ja) * 2013-12-27 2019-04-03 キヤノン株式会社 撮像装置およびその制御方法
JP6463002B2 (ja) * 2014-05-08 2019-01-30 キヤノン株式会社 撮像装置の駆動方法、撮像システムの駆動方法
US10021331B2 (en) 2014-07-14 2018-07-10 Sony Corporation Comparator, AD converter, solid-state imaging device, electronic apparatus, and method of controlling comparator
KR102261595B1 (ko) * 2014-09-19 2021-06-04 삼성전자주식회사 이미지 센서, 및 이를 포함하는 이미지 처리 시스템
FR3036247B1 (fr) * 2015-05-12 2017-06-09 Pyxalis Circuit de lecture d'un capteur a matrice de pixels avec conversion analogique - numerique a haute cadence d'acquisition, et capteur d'images comprenant un tel circuit
JP6135797B2 (ja) * 2016-05-09 2017-05-31 ソニー株式会社 固体撮像装置
JP6701001B2 (ja) * 2016-06-22 2020-05-27 キヤノン株式会社 撮像装置及びその制御方法、プログラム、記憶媒体
JP2019153822A (ja) 2016-07-13 2019-09-12 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子、及び、固体撮像素子の制御方法
CN106303313B (zh) * 2016-08-12 2019-04-30 中国科学院上海高等研究院 压缩感知cmos图像传感器的量化求和电路
JP6195142B1 (ja) * 2017-01-30 2017-09-13 テックポイント インクTechpoint, Inc. Ad変換装置及び撮像装置
CN107680030B (zh) * 2017-09-21 2020-10-30 中国科学院半导体研究所 一种图像处理器及处理方法
JP6704893B2 (ja) * 2017-11-30 2020-06-03 キヤノン株式会社 固体撮像装置、撮像システム、および固体撮像装置の駆動方法
KR102507628B1 (ko) 2018-04-24 2023-03-09 에스케이하이닉스 주식회사 램프 신호 발생 장치 및 그를 이용한 씨모스 이미지 센서
KR102851369B1 (ko) * 2020-06-26 2025-08-26 삼성전자주식회사 이미지 센서 및 이미지 센서의 비닝 방법

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JP4560205B2 (ja) * 2000-12-18 2010-10-13 キヤノン株式会社 A/d変換器及びそれを用いた固体撮像装置
JP2004147092A (ja) * 2002-10-24 2004-05-20 Canon Inc 信号処理装置、撮像装置、及び制御方法
JP4086618B2 (ja) * 2002-10-24 2008-05-14 キヤノン株式会社 信号処理装置及び方法
JP4193768B2 (ja) * 2004-07-16 2008-12-10 ソニー株式会社 データ処理方法並びに物理量分布検知の半導体装置および電子機器
JP4380439B2 (ja) * 2004-07-16 2009-12-09 ソニー株式会社 データ処理方法およびデータ処理装置並びに物理量分布検知の半導体装置および電子機器
JP4306603B2 (ja) * 2004-12-20 2009-08-05 ソニー株式会社 固体撮像装置および固体撮像装置の駆動方法
JP2008136043A (ja) * 2006-11-29 2008-06-12 Sony Corp 固体撮像装置、撮像装置

Also Published As

Publication number Publication date
CN101227551A (zh) 2008-07-23
JP4786631B2 (ja) 2011-10-05
KR101439227B1 (ko) 2014-09-12
JP4952758B2 (ja) 2012-06-13
JP2009284553A (ja) 2009-12-03
KR20080067963A (ko) 2008-07-22
CN101227551B (zh) 2013-11-20
JP2008199581A (ja) 2008-08-28
TW200845735A (en) 2008-11-16

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