1352371 九、發明說明： 【發明所屬之技術領域】 本發明涉及-種場發射電子器件的製備方法，尤其涉 及-種基於奈米碳管的大面積場發射電子器件的製備二 法。 【先前技術】 場發射電子器件在低溫或者室溫下工作，盘電真空器 二=射電子器件相比具有能耗低、回應速度快以及 低放虱等優點，故以用場發射電子器件有望替代 件中的熱發射電子器件。大面積場發射電子器件在平板顯 =等裝置中有著廣闊的應用前景，故，製備大面積場發 射電子器件成為目前研究的一個熱點。 請參閱圖i，先前技術t提供一種大面積場發射電子 器件酬，包括-絕緣基底繼，複數個電子發射單元12〇 j = 1Q2上’以及複數個行電極引線104與 複數個列電極引線⑽設置於該絕緣基底搬上。立中， 所述的複數個行電極引線104與複數個列電極引線⑽分 別t订且等間搞設置於絕緣基底102上，而且，在行電極 ^線綱與列電極引線⑽交又處由一介質絕緣層116隔 以防止短路。每兩個相鄰的行電極引線與兩個相 :列電極引線106形成一網格118，且每個網格ιΐ8定 位:個電子發射單元12〇。每個電子發射單元12〇與一個 1 設置。每個電子發射單元120包括-行電極 ” 4電極U2以及一電子發射體1〇8設置於該行電 1352371. 1 極110與列電極112上。該行電極110與列電極112對應 且間隔設置。該電子發射體108兩端分別與行電極110和 '列電極I12電連接。每個行電極110分別與其對應的行電 極引線104電連接，每個列電極112分別與其對應的列電 極引線106電連接。所述的電子發射體1〇8包括一電子發 射區114 (請參見，表面傳導電子發射顯示技術進展，液 晶與顯示，V21，P226-231 ( 2006))。 先刖技術中，製備上述大面積場發射電子器件1〇〇具 體包括以下步驟：提供一絕緣基底1〇2，並在該絕緣基底 102上製備複數個行電極引線1〇4與列電極引線且複 數個行電極引線104與複數個列電極引線1〇6相互交又形 成網絡，每兩個相鄰的行電極引線1〇4與每兩個相鄰的列 電極引線106交叉形成一網格ι18 ;在每個網格118中製 備一行電極110與一列電極112，且行電極n〇與列電極 112間隔設置；採用噴墨裝置以一滴或多滴的方式向每兩 鲁個對應的行電極110與列電極112上施加包含待形成導電 膜的初始材料的液體，形成初始膜；對初始膜進行加熱， 开；成一導電薄膜作為電子發射體1〇8 ;以及，對上述導電 薄膜進行啟動或賦能處理，形成一電子發射區114，從而 得到一大面積場發射電子器件。其中，所述的對導電 薄膜進行啟動或賦能處理通過在兩個對應的行電極11〇與 列電極112之間施加一電壓實現。當電流過導電薄膜時， 造成導電薄膜局域被毀壞或變形，從而形成一電子發射區 114。然而，先前技術中，必須對製備的電子發射體1〇8， 即導電薄膜進行啟動或賦能處理，該方法工藝較為複雜。 2 ’採用先讀術“電子發射體⑽， =射區m的位置，即電子發射區ιΐ4的形餘 機性，從而會影響電子發射的均勻性。 ，、有隨 有鑒於此，提供一種工藝簡單 發射電子器件的製備方法實為必要。-的大面積、 【發明内容】 -種場發射電子器件的製備方法，其包括以. =絕緣基底；在該絕緣基底上分別製備複數個平行且 行電極引線與複數個列電極引線，該複數個 二電極引線與列電極引線交又設置興誠網絡，每兩個相鄰 H極引線與每兩個相鄰的列電極引線相互交叉形成一 在上述、遇緣基底上製備複數個陽極電極與複數個卜 極電極，在每個網格令間隔設置一陽極電極與一陰極； 極；形成一奈米碳管薄膜結構覆蓋於上述設置有電極和電 極引線的絕緣基底上，該奈米碳管薄膜結構巾的奈米碳管 的排列方向從陰極電極向陽極電極延伸；切割奈米碳管薄 膜結構，使陽極電極與陰極電極之間的奈米碳管薄膜結構 斷開’形成複數個平行_的奈米碳管長_定於陰極電 極上作為陰極發射體，從而得到一場發射電子器件。 相較于先前技術，所述場發射電子器件的製備方法 中，通過鋪設奈米碳管薄膜結構，然後切割該奈米碳管薄 膜製備陰極發射體，無需對陰極發射體啟動或賦能處理的 過程，工藝簡單。而且，切割該奈米碳管薄膜製備的陰極 發射體位於陽極電極與陰極電極之間的位置相同，故，該 1352371. 場發射電子器件發射的電子均勻性好。 【實施方式】 以下將結合附圖對本技術方案作進一步的詳細說明。1352371 IX. Description of the Invention: [Technical Field] The present invention relates to a method for preparing a field emission electronic device, and more particularly to a method for preparing a large-area field emission electronic device based on a carbon nanotube. [Prior Art] Field-emitting electronic devices operate at low temperature or room temperature, and disk-electric vacuum devices have lower power consumption, faster response speed, and lower bleed. Therefore, it is expected that field emission electronic devices will be used. Thermal emission electronics in the replacement. Large-area field emission electronic devices have broad application prospects in flat panel display devices. Therefore, the preparation of large-area field emission electronic devices has become a hot topic in current research. Referring to FIG. 1, prior art t provides a large-area field emission electronic device, including an insulating substrate, a plurality of electron-emitting units 12〇j=1Q2', and a plurality of row electrode leads 104 and a plurality of column electrode leads (10). It is disposed on the insulating substrate. In the middle, the plurality of row electrode leads 104 and the plurality of column electrode leads (10) are respectively t-shaped and disposed on the insulating substrate 102, and the row electrode assembly and the column electrode lead (10) are intersected by A dielectric insulating layer 116 is interposed to prevent short circuits. Each two adjacent row electrode leads and two phases: column electrode leads 106 form a grid 118, and each grid ι 8 is positioned: an electron-emitting unit 12 〇. Each electron-emitting unit 12 is set with a 1 . Each of the electron-emitting units 120 includes a row electrode 4 electrode U2 and an electron emitter 1 8 is disposed on the row electrode 1335271. The pole 110 and the column electrode 112. The row electrode 110 corresponds to the column electrode 112 and is spaced apart The electron emitter 108 is electrically connected to the row electrode 110 and the column electrode I12, respectively. Each row electrode 110 is electrically connected to its corresponding row electrode lead 104, and each column electrode 112 is respectively associated with its column electrode lead 106. The electron emitter 1 8 includes an electron-emitting region 114 (see, Progress in Surface-Conduction Electron Emission Display Technology, Liquid Crystal and Display, V21, P226-231 (2006)). The above-mentioned large-area field emission electronic device 1 〇〇 specifically includes the steps of: providing an insulating substrate 1 〇 2, and preparing a plurality of row electrode leads 1 〇 4 and column electrode leads and a plurality of row electrode leads 104 on the insulating substrate 102 Intersecting with a plurality of column electrode leads 1〇6 to form a network, each two adjacent row electrode leads 1〇4 and each two adjacent column electrode leads 106 intersect to form a mesh ι18; in each grid 118 A row of electrodes 110 and a column of electrodes 112 are provided, and the row electrodes n〇 are spaced apart from the column electrodes 112; an inkjet device is applied to each of the two corresponding row electrodes 110 and the column electrodes 112 in a drop or droplets to be formed. The liquid of the initial material of the conductive film forms an initial film; the initial film is heated, opened; a conductive film is formed as an electron emitter 1; and the conductive film is activated or energized to form an electron-emitting region 114. Thereby, a large area field emission electronic device is obtained, wherein the starting or energizing treatment of the conductive film is realized by applying a voltage between two corresponding row electrodes 11 〇 and the column electrodes 112. When the current is over conductive In the case of the film, the conductive film is locally destroyed or deformed to form an electron-emitting region 114. However, in the prior art, the prepared electron emitter 1〇8, that is, the conductive film must be activated or energized. The process is more complicated. 2 'Use the first reading "electron emitter (10), = the position of the shot area m, that is, the shape of the electron emission area ιΐ4, from It will affect the uniformity of electron emission. In view of this, it is necessary to provide a process for preparing a simple electron-emitting device. - a large area, [invention] - a method of preparing a field emission electronic device, comprising: an insulating substrate; preparing a plurality of parallel and row electrode leads and a plurality of column electrode leads on the insulating substrate, the plurality of The two electrode lead and the column electrode lead are disposed together with a Xingcheng network, and each two adjacent H-pole leads and each two adjacent column electrode leads cross each other to form a plurality of anode electrodes and plural numbers on the above-mentioned edge substrate a dipole electrode, an anode electrode and a cathode are disposed at intervals of each grid; a pole; a carbon nanotube film structure is formed on the insulating substrate provided with the electrode and the electrode lead, the carbon nanotube film The arrangement of the carbon nanotubes of the structural towel extends from the cathode electrode to the anode electrode; the structure of the carbon nanotube film is cut to break the structure of the carbon nanotube film between the anode electrode and the cathode electrode to form a plurality of parallel _ The carbon nanotube length is set on the cathode electrode as a cathode emitter, thereby obtaining a field emission device. Compared with the prior art, in the preparation method of the field emission electronic device, a cathode emitter is prepared by laying a carbon nanotube film structure and then cutting the carbon nanotube film without starting or energizing the cathode emitter. Process, process is simple. Moreover, the cathode emitter prepared by cutting the carbon nanotube film is located at the same position between the anode electrode and the cathode electrode, so that the electron emission emitted by the field emission electron device is good. [Embodiment] Hereinafter, the technical solution will be further described in detail with reference to the accompanying drawings.
請參閱圖2及圖3，本技術方案實施例提供—種場發 射電子器件200的製備方法，具體包括以下步驟： X 步驟一’提供一絕緣基底2〇2。 所述的絕緣基底202為一絕緣基板，如陶瓷絕緣基 #板、玻璃絕緣基板、樹脂絕緣基板、石英絕緣基板等。ς 緣基底202大小與厚度不限，本領域技術人員可以根據實 際需要選擇。本實施例中’絕緣基底观優選為_玻璃絕 緣基板，其厚度為大於丄毫米，邊長大於i厘米。 步驟二，在該絕緣基底202上分別製備複數個平行且 等間隔設置的行電極引線綱與列電極引線2〇6， 個行電極引線204與列電極引線2〇6 $又設置形成網絡， 每兩個相鄰的行電極引線綱與每兩個相鄰的列電極 • 206相互交又形成一網格214。 所述製備複數個行電極引線204與複數個列電極引 206可以通過綵網印刷法、㈣法或蒸鐘法等方法實現。 可以理解’在製備過程中，可以通過上述製備方法控制， 使=述複數個行電極引線綱與複數個列電極引線2〇^ 又置同時，需確保行電極引線204與列電極引锿 之間電絕緣，形成可尋址電路，以便於在不同行 綱與列電極引線206之間施加可定址電塵。本實施例中 知用絲網印刷法製備複數個行電極引線綱與複數個列屬 1352371 極引線206，其具體包括以下步驟： ： 首先，採用絲網印刷法在絕緣基底202上印刷複數個 ' 平行且等間隔設置的行電極引線204。 其次，採用絲網印刷法在行電極引線204與待形成的 列電極引線206交叉處印刷複數個介質絕緣層216。 最後，採用絲網印刷法在絕緣基底202上印刷複數個 平行且等間隔設置的列電極引線206，且複數個行電極引 φ線204與複數個列電極引線206相互交叉形成複數個網格 214 ° 可以理解，本實施例中，也可以先印刷複數個平行且 等間隔設置的列電極引線206，再印刷複數個介質絕緣層 216，最後印刷複數個平行且等間隔設置的行電極引線 204，且複數個行電極引線204與複數個列電極引線206 相互交叉形成複數個網格214。 本實施例中，該複數個行電極引線204與複數個列電 鲁極引線206的行距和列距為300微米〜500微米。該行電極 引線204與列電極引線206的交叉角度為10度到90度， 優選為90度。該行電極引線204與列電極引線206的寬度 為30微米〜100微米，厚度為10微米~50微米。 本實施例中，通過絲網印刷法製備行電極引線204與 列電極引線206的材料為導電漿料。該導電漿料的成分包 括金屬粉、低熔點玻璃粉和粘結劑。其中，該金屬粉優選 為銀粉，該粘結劑優選為松油醇或乙基纖維素。該導電漿 料中，金屬粉的重量比為50~90%，低熔點玻璃粉的重量 11 1352371 比為2〜10%，粘結劑的重量比為10〜40%。 : 步驟三，在上述絕緣基底202上製備複數個陽極電極 ' 210與複數個陰極電極212,在每個網格214中間隔設置一 陽極電極210與一陰極電極212。 製備複數個陽極電極210與陰極電極212可以通過絲 網印刷法、濺射法或蒸鍍法等方法實現。本實施例中，採 用絲網印刷法按照預定圖案製備複數個陽極電極210與陰 |極電極212。同時，使陽極電極210與陰極電極212分別 與行電極引線204與列電極引線206電連接。可以理解， 本實施例中，可以將同一列的陰極電極212與同一列電極 引線206電連接，同一行的陽極電極210與同一行電極引 線204電連接；也可以將同一列的陽極電極210與同一列 電極引線206電連接，同一行的陰極電極212與同一行電 極引線204電連接。每個網格214中的陽極電極210與陰 極電極212製備成完全相同的圖形以及位置。每一個網格 _ 214中等間隔設置一個陽極電極210與一陰極電極212。該 陽極電極210與陰極電極212之間保持一間距，用於設置 陰極發射體208。 本實施例中，所述陽極電極210與陰極電極212的長 度為100微米〜400微米，寬度為30微米〜100微米，厚度 為10微米~100微米。所述每個網格214中的陽極電極210 與陰極電極212之間的間距為150微米〜450微米。本實施 例中，所述陽極電極210與陰極電極212的長度優選為150 微米，寬度優選為50微米，厚度優選為50微米。其中， 12 1352371 該陽極電極210盘降搞蕾权Referring to FIG. 2 and FIG. 3, the embodiment of the present invention provides a method for preparing a field emission electronic device 200, which specifically includes the following steps: X Step 1 provides an insulating substrate 2〇2. The insulating substrate 202 is an insulating substrate, such as a ceramic insulating substrate, a glass insulating substrate, a resin insulating substrate, a quartz insulating substrate, or the like. The size and thickness of the rim substrate 202 are not limited, and those skilled in the art can select according to actual needs. The insulating substrate in this embodiment is preferably a glass insulating substrate having a thickness greater than 丄 mm and a side length greater than i cm. Step 2, a plurality of parallel and equally spaced row electrode lead and column electrode leads 2〇6 are respectively prepared on the insulating substrate 202, and the row electrode leads 204 and the column electrode leads 2〇6$ are further formed into a network, and each is formed into a network. Two adjacent row electrode leads and two adjacent column electrodes 206 intersect each other to form a grid 214. The preparation of the plurality of row electrode leads 204 and the plurality of column electrode leads 206 can be achieved by a method such as a color screen printing method, a (four) method, or a steam clock method. It can be understood that, in the preparation process, it can be controlled by the above preparation method, so that a plurality of row electrode leads and a plurality of column electrode leads 2 are simultaneously disposed, and it is necessary to ensure between the row electrode leads 204 and the column electrode leads. Electrically insulated, an addressable circuit is formed to facilitate application of addressable electrical dust between different rows and column electrode leads 206. In this embodiment, a plurality of row electrode leads and a plurality of column 1325271 pole leads 206 are prepared by screen printing, which specifically includes the following steps: First, a plurality of printed on the insulating substrate 202 are printed by screen printing. Row electrode leads 204 are arranged in parallel and at equal intervals. Next, a plurality of dielectric insulating layers 216 are printed by screen printing at the intersection of the row electrode leads 204 and the column electrode leads 206 to be formed. Finally, a plurality of parallel and equally spaced column electrode leads 206 are printed on the insulating substrate 202 by screen printing, and the plurality of row electrode indexing lines 204 and the plurality of column electrode leads 206 intersect each other to form a plurality of grids 214. ° It can be understood that, in this embodiment, a plurality of parallel and equally spaced column electrode leads 206 may be printed, a plurality of dielectric insulating layers 216 are printed, and a plurality of parallel and equally spaced row electrode leads 204 are printed. A plurality of row electrode leads 204 and a plurality of column electrode leads 206 intersect each other to form a plurality of grids 214. In this embodiment, the row and column pitch of the plurality of row electrode leads 204 and the plurality of columnar pole leads 206 are from 300 micrometers to 500 micrometers. The row electrode electrode 204 and the column electrode lead 206 have an angle of intersection of 10 to 90 degrees, preferably 90 degrees. The row electrode lead 204 and the column electrode lead 206 have a width of 30 μm to 100 μm and a thickness of 10 μm to 50 μm. In the present embodiment, the material for preparing the row electrode lead 204 and the column electrode lead 206 by the screen printing method is a conductive paste. The composition of the conductive paste includes metal powder, low-melting glass frit, and a binder. Among them, the metal powder is preferably silver powder, and the binder is preferably terpineol or ethyl cellulose. In the conductive paste, the weight ratio of the metal powder is 50 to 90%, the weight of the low-melting glass powder is 11 to 352371, and the weight ratio of the binder is 10 to 40%. Step 3: A plurality of anode electrodes '210 and a plurality of cathode electrodes 212 are prepared on the insulating substrate 202, and an anode electrode 210 and a cathode electrode 212 are disposed in each of the grids 214. The preparation of the plurality of anode electrodes 210 and cathode electrodes 212 can be carried out by a method such as a screen printing method, a sputtering method, or a vapor deposition method. In this embodiment, a plurality of anode electrodes 210 and cathode electrodes 212 are prepared in accordance with a predetermined pattern by screen printing. At the same time, the anode electrode 210 and the cathode electrode 212 are electrically connected to the row electrode lead 204 and the column electrode lead 206, respectively. It can be understood that, in this embodiment, the cathode electrode 212 of the same column and the same column electrode lead 206 can be electrically connected, and the anode electrode 210 of the same row is electrically connected to the same row of electrode leads 204; the anode electrode 210 of the same column can also be The same column electrode lead 206 is electrically connected, and the cathode electrode 212 of the same row is electrically connected to the same row electrode lead 204. The anode electrode 210 and the cathode electrode 212 in each of the grids 214 are prepared in exactly the same pattern and position. Each of the grids 214 is provided with an anode electrode 210 and a cathode electrode 212 at intervals. A gap is maintained between the anode electrode 210 and the cathode electrode 212 for providing the cathode emitter 208. In this embodiment, the anode electrode 210 and the cathode electrode 212 have a length of 100 μm to 400 μm, a width of 30 μm to 100 μm, and a thickness of 10 μm to 100 μm. The spacing between the anode electrode 210 and the cathode electrode 212 in each of the grids 214 is from 150 micrometers to 450 micrometers. In this embodiment, the anode electrode 210 and the cathode electrode 212 preferably have a length of 150 μm, a width of preferably 50 μm, and a thickness of preferably 50 μm. Among them, 12 1352371 the anode electrode 210
，、陰極電極212的厚度大於上述行電極 線204與列電極引線 丁冤極弓I 太半心_ 厚度，以利於後續步驟中設置 I 2:: 述陽極電極210與陰極電極212的材料 為導電漿料’其成分與上述行電極引線綱 206的材料成分相同。 』电則1綠 步驟四’製備至少一奈米碳管薄膜。 該奈米，管薄膜的製備方法具體包括以下步驟： 提供τ'米碳官陣列，優選地，該奈米碳管陣 列為超順排奈米碳管陣列。 本實施例中’奈米碳管陣列的製備方法採用化學氣相 沈積法，其具體步驟包括：（a)提供一平整基底，該基底 可選用P型或N型石夕基底，或選用形成有氧化層的石夕基 底，本實施例優選為採用4英寸的石夕基底；⑴在基底表 面均勻形《冑化劑詹，該催化劑層材料可選用鐵（以）、 鈷（Co)、鎳（Ni)或其任意組合的合金之一；（c)將上 ♦述形成有催化_的基底在以帆的空氣中退火約 30二分鐘〜90分鐘；（d)將處理過的基底置於反應爐中在 保護氣體環境下加熱到5〇(rc〜74(rc，然後通入碳源氣體 反應約5分鐘〜30分鐘，生長得到奈米碳管陣列，其高度 大於100微米。該奈米碳管陣列為複數個彼此平行且垂^ 於基底生長的奈米碳管形成的純奈米碳管陣列。該奈米碳 管陣列與上述基底面積基本相同。通過上述控制2長條 件，該超順排奈米碳管陣列中基本不含有雜質，如無定型 碳或殘留的催化劑金屬顆粒等。 13 i 1352371· 本實施例中碳源氣可選用乙炔、乙烯、曱烷等化學性 .質較活潑的碳氫化合物，本實施例優選的碳源氣為乙炔； .保護氣體為氮氣或惰性氣體，本實施例優選的保護氣體為 氬氣。 … 可以理解，本實施例提供的奈米碳管陣列不限於上述 製備方法。本實施例提供的奈米碳管陣列中的奈米碳管為 單壁奈米碳管'雙壁奈米碳管及多壁奈米碳管中的一種或 φ多種。其中，該單壁奈米碳管的直徑為〇 5奈米〜5〇奈米， 該雙壁奈米碳管的直徑為10奈米〜50奈米，該多壁奈米 碳管的直徑為1.5奈米〜50奈米。 其次，採用一拉伸工具從奈米碳管陣列中拉取獲得一 奈米碳管薄膜。 該奈米碳管薄膜的製備具體包括以下步驟：（a)從上 述奈米碳管陣列中選定一定寬度的複數個奈米碳管片斷， 本實施例優選為採用具有一定寬度的膠帶接觸奈米碳管陣 •列以選定一定寬度的複數個奈米碳管束；（b)以一定速度 /σ基本垂直于奈米碳管陣列生長方向拉伸複數個該奈米碳 官束’以形成一連續的奈米碳管薄膜。 在上述拉伸過程中，該複數個奈米碳管束在拉力作用 下沿拉伸方向逐漸脫離基底的同時，由於凡德瓦而力作 用，該選定的複數個奈米碳管束分別與其他奈米碳管束首 尾相連地連續地被拉出，從而形成一奈米碳管薄膜。所述 奈米碳管薄膜包括複數個首尾相連且擇優取向排列的奈米 石反官束，相鄰的奈米碳管束之間通過凡德瓦而力連接。該 1352371 . 不未碳管束包括複數個長度相等且相互平行排列的奈米碳 官，相鄰奈米碳管之間通過凡德瓦而力連接，且奈米碳管 -的排列方向基本平行于奈米碳管薄膜的拉伸方向。 可以理解，本實施例中，該奈米碳管薄膜的寬度與奈 米石岌管陣列所生長的基底的尺寸有關，該奈米碳管薄膜的 長度不限，可根據實際需求制得。本實施例中採用4英寸 的基底生長超順排奈米碳管陣列，所製備的奈米碳管薄膜 #的寬度為0.01厘米〜1〇厘米，厚度為1〇奈米〜1〇〇微米。 可以理解’虽採用較大的基底生長超順排奈米碳管陣列 時，可以得到更寬的奈米碳管薄膜。 由於本實施例製備的超順排奈米碳管陣列中的奈米碳 管非常純淨，且由於奈米碳管本身的比表面積非常大，故， 該奈米碳管薄膜本身具有較強的粘性。 步驟五，將至少一上述奈米碳管薄膜鋪設覆蓋於上述 設置有電極和電極引線的絕緣基底2〇2上形成一奈米碳管 i薄膜結構’且奈米碳管薄膜結構中的奈米碳管的排列方向 從陰極電極212向陽極電極21〇延伸。 可以理解，所述將至少一上述奈米碳管薄膜設置於上 述設置有電極和電極引線的絕緣基底2〇2上的步驟可以為 直接將至少一奈米碳管薄膜鋪設覆蓋於上述設置有 電極引線的絕緣基底202上形成一奈米碳管薄膜結構，或 先將至少一上述奈米碳管薄膜製備成一自支撐的奈米碳管 薄膜結構，再將該自支撐的奈米碳管薄膜結構設置於上述 設置有電極和電極引線的絕緣基底2〇2上，使該奈米碳管The thickness of the cathode electrode 212 is greater than the thickness of the row electrode line 204 and the column electrode lead, so as to facilitate the setting of I 2 in the subsequent step: the material of the anode electrode 210 and the cathode electrode 212 is electrically conductive. The slurry 'its composition is the same as that of the above-described row electrode lead 206. 』Electric 1 Green Step 4' Prepare at least one carbon nanotube film. The nano, tube film preparation method specifically comprises the steps of: providing a τ' m carbon officer array, preferably, the carbon nanotube array is a super-sequential carbon nanotube array. In the present embodiment, the method for preparing the carbon nanotube array adopts a chemical vapor deposition method, and the specific steps thereof include: (a) providing a flat substrate, the substrate may be selected from a P-type or N-type Shi Xi substrate, or alternatively formed The Shihua base of the oxide layer, in this embodiment is preferably a 4-inch stone base; (1) uniformly shaped on the surface of the substrate, the catalyst layer material may be iron, cobalt or cobalt. One of the alloys of Ni) or any combination thereof; (c) annealing the substrate on which the catalyst is formed in the air of the sail for about 30 minutes to 90 minutes; (d) placing the treated substrate in the reaction The furnace is heated to 5 〇 in a protective gas atmosphere (rc~74 (rc, then passed through a carbon source gas for about 5 minutes to 30 minutes to grow to obtain a carbon nanotube array having a height greater than 100 μm. The nanocarbon) The tube array is a plurality of pure carbon nanotube arrays formed by carbon nanotubes which are parallel to each other and are grown on the substrate. The carbon nanotube array is substantially the same area as the above substrate. The carbon nanotube array is basically free of impurities. For example, amorphous carbon or residual catalyst metal particles, etc. 13 i 1352371· In this embodiment, the carbon source gas may be selected from chemically active hydrocarbons such as acetylene, ethylene, and decane, and the preferred carbon source in this embodiment. The gas is acetylene; the shielding gas is nitrogen or an inert gas, and the preferred shielding gas in this embodiment is argon. It is understood that the carbon nanotube array provided in this embodiment is not limited to the above preparation method. The carbon nanotubes in the carbon nanotube array are one or a plurality of single-walled carbon nanotubes 'double-walled carbon nanotubes and multi-walled carbon nanotubes. The diameter of the single-walled carbon nanotubes is 〇 5 nm ~ 5 〇 nanometer, the diameter of the double-walled carbon nanotube is 10 nm to 50 nm, and the diameter of the multi-walled carbon nanotube is 1.5 nm to 50 nm. The stretching tool extracts a carbon nanotube film from the carbon nanotube array. The preparation of the carbon nanotube film specifically comprises the following steps: (a) selecting a plurality of widths from the carbon nanotube array. The carbon nanotube segment, the embodiment preferably has a certain Width of the tape contacts the carbon nanotube array • Lists a plurality of carbon nanotube bundles of a certain width; (b) Stretches a plurality of the nanocarbons at a certain speed / σ substantially perpendicular to the growth direction of the carbon nanotube array The bundle 'to form a continuous carbon nanotube film. During the above stretching process, the plurality of carbon nanotube bundles gradually disengage from the substrate in the stretching direction under the action of tension, and the force acts due to van der Waals. The selected plurality of carbon nanotube bundles are continuously drawn out end to end with the other carbon nanotube bundles to form a carbon nanotube film. The carbon nanotube film comprises a plurality of end-to-end and preferred orientations. The nano-stone is opposite to the official beam, and the adjacent carbon nanotube bundles are connected by van der Waals force. The 1352337. The non-carbon tube bundle includes a plurality of carbon nanotubes of equal length and arranged in parallel with each other, adjacent nanometers. The carbon tubes are connected by van der Waals force, and the arrangement of the carbon nanotubes is substantially parallel to the stretching direction of the carbon nanotube film. It can be understood that, in this embodiment, the width of the carbon nanotube film is related to the size of the substrate on which the nano-tube array is grown, and the length of the carbon nanotube film is not limited and can be obtained according to actual needs. In this embodiment, a 4-inch substrate is used to grow a super-sequential carbon nanotube array, and the prepared carbon nanotube film # has a width of 0.01 cm to 1 cm and a thickness of 1 nm to 1 μm. It can be understood that a wider carbon nanotube film can be obtained while using a larger substrate to grow a super-sequential carbon nanotube array. Since the carbon nanotubes in the super-sequential carbon nanotube array prepared in this embodiment are very pure, and since the specific surface area of the carbon nanotube itself is very large, the carbon nanotube film itself has strong viscosity. . Step 5, laying at least one of the above-mentioned carbon nanotube films on the insulating substrate 2〇2 provided with the electrode and the electrode lead to form a carbon nanotube i film structure' and the nanometer in the carbon nanotube film structure The arrangement direction of the carbon tubes extends from the cathode electrode 212 to the anode electrode 21A. It can be understood that the step of disposing at least one of the above-mentioned carbon nanotube films on the insulating substrate 2〇2 provided with the electrode and the electrode lead may be to directly lay at least one carbon nanotube film on the electrode provided above. Forming a carbon nanotube film structure on the insulating substrate 202 of the lead, or first preparing at least one of the above-mentioned carbon nanotube film into a self-supporting carbon nanotube film structure, and then the self-supporting carbon nanotube film structure Provided on the insulating substrate 2〇2 provided with the electrode and the electrode lead described above to make the carbon nanotube
15 薄膜結構將絕緣基底2D9 μ aa恭j·*· * 底202上的電極和電極引線完全覆蓋。 有電椏：直接將至少一奈米碳管薄膜鋪設覆蓋於上述設置 '!=Γ線的絕緣基底2°2上形成-奈米碳管薄膜 直接將至少一奈米碳管薄膜鋪設覆蓋 個叹置有電極和電極引線的絕緣基底202i，通過盆 面電極212與陽極電 於不米碳管薄膜本身具有良好的導電性，故，盘陰 電極212和陽極電極21〇實現電連接。可以理解，； 場發射電子器件_時，本實施例中還可以將至 奈米碳管薄财行且無間__設覆蓋於上述設 =電極和電極引線的絕緣基底202上，形成一奈米碳管 重最:構。進一步’還可以將至少兩個奈米碳管薄膜直接 且舖设，或平行^無間隙排列和重疊較於上述設置有 2和電極引線的絕緣基底202上，形成一奈米碳管薄膜 1。本實施例中，要確保該奈米碳管薄膜結構中的奈米 反S的排列方向相同’且奈米碳管的排列方向從陰極電極 212向陽極電極21〇延伸。本實施例中，由於在後續步騾 中要將不米碳f薄膜結構加工成複數個平行且等間隔排列 的不米妷管長線，因此，奈米碳管薄臈的層數不易太多， 優選為1〜5層。 可以理解’為了將該奈米碳管薄膜結構更牢固的固定 於陰極f極212之上，並更有效的與陰極電極212電連接， 將至少一奈米碳管薄膜鋪設覆蓋於整個設置有電極和電極 引線的絕緣基底202上形成一奈米碳管薄膜結構之前，還 16 < S ) 1352371. 可以先在陰極電極212上塗敷一層導電勝。 本實施例還可進一步使用有機溶劑處理上述夺其 薄膜結構。具體的，可通過試管將有機溶劑滴落在所二 米碳管薄膜結構表面浸满整個奈米碳管薄膜結構。不 也可將奈米碳管薄膜結構體整個浸入盛有有機溶劑的容器 令浸潤。該有機溶劑為揮發性有機溶劑，如乙醇、甲 丙嗣、二氣乙燒或氯仿，本實施例中優選採用乙醇。註太 $碳管薄臈經有機溶劑㈣處理後，在揮發性有機溶^ 表面張力的作用下，奈米碳管薄膜結構中的: ^片斷會部分聚集成奈米碳管束，因此，該奈米碳；= 積比小，難降低，且具有良好的機械強度及物性， 應用有機溶劑處理後的奈米碳管薄膜性能更加優異。 太所述先將至少-上述奈米碳管薄膜製備成一自支樓的 膜結構，再將該奈米碳管薄膜結構設置於上述 α置有電極和電極引線的絕緣基底加 以下步驟：提供一支撐體；將？,,、初太㈣八體匕括 於并 奈米碳管薄膜粘附 支樓體外多餘的奈米碳管薄臈，形 =奈米碳讀膜結構；採用有機溶劑處理上述奈米碳管 支=取:有機溶劑處理後的奈米碳管薄膜結構從上述 Ϊ = 並鋪設覆蓋於上述設置有電極和電極引線 兩個可以理解’本實施例令還可以將至少 不未奴f薄膜平行且無間隙排列 撐體上，形成一太氺π其贫 里且领·»又π又 構令的奈米碳管:列構。所述奈米碳管薄膜結 排列方向相同。將有機溶劑處理後的奈米 17 < S ) 1352371 碳官薄膜結構從上述支撐體上取下，並鋪設覆蓋於上述設 .^電極和電極引線的絕緣基底202上時，要確該保奈米 碳管薄膜結構令的奈米碳管排列方向從陰極電極212向陽 極210延仲。本實施例中，由於在後續步驟中要將奈 $碳官薄膜結構加工成複數個平行且等間隔排列的奈米碳 管長線，因此，奈米碳管薄膜結構的層數不易太多，優選 為1〜5層。 • 本實施例尹，該支撐體的大小可依據實際需求確定。 上述支撐體可選用-基板或框架，上述奈米碳管薄膜可利 用其本身的粘性直接粘附於基板或框架上。奈米碳管薄膜 粘附在基板或框架上，基板或框架外多餘的奈米碳管薄膜 部分可以用小刀刮去。該奈米碳管薄膜結構經有機溶劑浸 潤處理後，在揮發性有機溶劑的表面張力的作用下，奈米 碳管薄膜結構_的平行的奈米碳管片斷會部分聚集成奈米 碳管束。而且，使得奈米碳管薄膜結構粘性降低，具有良 癱好的機械強度及韌性，容易從支撐體上取下，得到一自支 撐的奈米碳管薄膜結構。 本實施例令，將自支撐的奈米碳管薄臈結構鋪設覆蓋 於上述設置有電極和電極引線的絕緣基底202上之前，可 以先在陰極電極212表面塗敷一層導電膠，以利於更牢固 的將奈米碳管薄膜結構固定於陰極電極212上，並與陰極 電極212有效電連接。 本實施例t，可進一步包括採用絲網印刷法製備一固 定電極（圖中未顯示）設置於陰極電極212之上，該固定電 18 1352371 定於固定電極與陰極電極 極將奈米碳管薄膜結構牢固的固 212之間。 步驟'、’切割奈米碳管薄膜結構，使陽極電極210與 陰極電極212之間的奈米碳管薄膜結構斷開，形成複數個 平订排列的奈米碳管長線固定於陰極電極21 發射體施，從而得到一場發射電子器件200。 所述刀。J不米碳官薄膜結構的方法為雷射燒姓法、電 籲子束掃描法或加熱_法。本實_巾，優選㈣雷射燒 姓法切割奈求碳管薄膜結構，具體包括以下步驟： 首先採用一疋寬度的雷射光束沿著每個行電極引線 204進行掃描’去除不同行的電極之間的奈米碳管薄膜結 構，使得留下的奈米碳管薄膜結構僅設置于同一行的陰極 電極犯與陽極電極21〇之上。其中，所述雷射光束的寬 度等於，於相鄰兩行的陰極電極212之間的行間距離。 八；人採用疋寬度的雷射光束沿著每個列電極引線 〇6進行掃& ’去除列電極引線施與相鄰陽極電極 之間的不来碳f薄膜結構，並使得同一網格214巾的陰極 電極212與陽極電極21〇之間的奈米碳管薄膜結構與陽極 電極210斷開。該步驟中，在奈来碳管薄膜的斷裂處會形 成複數個電子發射端222，且電子發射端222與陽極電極 ㈣之間形成一間隔。其中，所述雷射光束的寬度大於列 電極引線206與相鄰陽極電極21〇之間的距離。 可以理解，上述採用雷射燒蝕法切割奈米碳管薄膜結 構的方法還可以通過較窄的雷射光束多次掃描實現。 19 1352371 . 由於該奈米碳管薄膜結構經有機溶劑浸潤處理後，在 揮發性有機溶劑的表面張力的作用下，奈米碳管薄獏结構 中的平行的奈米碳管片斷會部分聚集收縮成奈米碳管^， 且奈米碳管束首尾相歧向排列，故，採用f射燒钱法切 割奈米碳官薄膜結構後，在陽極電極21〇與陰極電極 之間形成複數個平行且等間隔排列的奈米碳管長線 極發射體208。 w # 可以理解，本實施例中，還可以先採用寬度的雷 射光束沿著每個列電極引線襄進行掃插，去除列電極引 線206與相鄰陽極電極21〇之間的奈米碳管薄膜結構，並 使得同-網格214中的陰極電極212與陽極電極21〇 的奈米碳管薄膜結構與陽極電極21〇斷開；再採用 度的雷射光束沿著每個行電極引線施進行掃描去除不 同行的電極之間的奈米碳管薄膜。 桊貫施例中15 The film structure completely covers the electrodes and electrode leads on the insulating substrate 2D9 μ aa. There is electric shovel: directly at least one carbon nanotube film is laid over the above-mentioned setting '!= 的 line of insulating substrate 2 ° 2 formed - the carbon nanotube film directly lays at least one carbon nanotube film to cover a sigh The insulating substrate 202i provided with the electrodes and the electrode leads is electrically connected to the anode of the carbon nanotube film by the basin electrode 212 and the anode, so that the cathode electrode 212 and the anode electrode 21 are electrically connected. It can be understood that, in the case of the field emission electronic device, in this embodiment, the carbon nanotubes can be thinned and covered on the insulating substrate 202 of the above-mentioned electrode and the electrode lead to form a nanometer. The carbon tube is the most important: structure. Further, it is also possible to form at least two carbon nanotube films directly or in parallel, or in parallel and without gaps, and to form a carbon nanotube film 1 on the insulating substrate 202 provided with the electrode lead and the electrode lead. In the present embodiment, it is necessary to ensure that the arrangement direction of the nano-S in the carbon nanotube film structure is the same 'and the arrangement direction of the carbon nanotubes extends from the cathode electrode 212 toward the anode electrode 21'. In this embodiment, since the non-carbon carbon film structure is processed into a plurality of parallel and equally spaced non-rice tube long lines in the subsequent step, the number of layers of the carbon nanotubes is not too much. It is preferably 1 to 5 layers. It can be understood that 'in order to fix the structure of the carbon nanotube film more firmly on the cathode f-pole 212, and more effectively electrically connect with the cathode electrode 212, at least one carbon nanotube film is laid over the entire electrode. Before forming a carbon nanotube film structure on the insulating substrate 202 of the electrode lead, 16 < S ) 1352371. A conductive layer may be applied to the cathode electrode 212 first. This embodiment can further treat the above-mentioned film structure by using an organic solvent. Specifically, the organic solvent may be dropped on the surface of the carbon nanotube film structure through a test tube to impregnate the entire carbon nanotube film structure. It is also possible to infiltrate the entire carbon nanotube film structure by immersing it in a container containing an organic solvent. The organic solvent is a volatile organic solvent such as ethanol, propylene glycol, diethylene bromide or chloroform, and ethanol is preferably used in this embodiment. Note: After treatment with organic solvent (4), the surface of the carbon nanotube film structure will be partially aggregated into the carbon nanotube bundle under the action of the surface tension of the volatile organic solvent. Therefore, the Rice carbon; = small in proportion, difficult to reduce, and has good mechanical strength and physical properties, the performance of the carbon nanotube film treated with organic solvent is more excellent. Too long, at least the above-mentioned carbon nanotube film is prepared into a film structure of a self-supporting building, and the carbon nanotube film structure is disposed on the insulating substrate with the electrode and the electrode lead, and the following steps are added: Support; will? ,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,, = take: the carbon nanotube film structure after the organic solvent treatment from the above Ϊ = and laying over the above provided with the electrode and electrode lead two can be understood 'this embodiment can also be at least not unfollowed f film parallel and no The gaps are arranged on the support to form a carbon nanotube which is too 氺 π, which is poor, and has a π and a π structure. The carbon nanotube film is arranged in the same direction. When the organic solvent-treated nano 17 < S ) 1352371 carbon official film structure is removed from the support and laid on the insulating substrate 202 of the above-mentioned electrode and electrode lead, it is necessary to confirm the The carbon nanotube film structure allows the arrangement of the carbon nanotubes from the cathode electrode 212 to the anode 210. In this embodiment, since the nano-carbon film structure is processed into a plurality of parallel and equally spaced carbon nanotube long lines in the subsequent step, the number of layers of the carbon nanotube film structure is not too much, preferably It is 1 to 5 layers. • In this embodiment, the size of the support body can be determined according to actual needs. The support may be selected from a substrate or a frame, and the above-mentioned carbon nanotube film may be directly adhered to the substrate or the frame by its own adhesiveness. The carbon nanotube film adheres to the substrate or frame, and the excess portion of the carbon nanotube film outside the substrate or frame can be scraped off with a knife. After the carbon nanotube film structure is immersed in an organic solvent, the parallel carbon nanotube segments of the carbon nanotube film structure are partially aggregated into the carbon nanotube bundle under the surface tension of the volatile organic solvent. Moreover, the structure of the carbon nanotube film is reduced in viscosity, has good mechanical strength and toughness, and is easily removed from the support to obtain a self-supporting carbon nanotube film structure. In this embodiment, before the self-supporting carbon nanotube thin crucible structure is laid on the insulating substrate 202 provided with the electrode and the electrode lead, a conductive adhesive may be applied on the surface of the cathode electrode 212 to facilitate the stronger. The carbon nanotube film structure is fixed on the cathode electrode 212 and is electrically connected to the cathode electrode 212. The embodiment t may further include: preparing a fixed electrode (not shown) by using a screen printing method, and placing the fixed electrode on the cathode electrode 212. The fixed electrode 18 1352371 is fixed on the fixed electrode and the cathode electrode. The structure is solid between the solid 212. Step ', 'cutting the carbon nanotube film structure, the carbon nanotube film structure between the anode electrode 210 and the cathode electrode 212 is broken, forming a plurality of aligned carbon nanotube long wires fixed to the cathode electrode 21 for emission The body is applied to obtain a field emission device 200. The knife. The method of J carbon-free carbon film structure is a laser burning method, an electric beam scanning method or a heating method. The actual _ towel, preferably (four) laser burning method to cut the carbon tube film structure, specifically comprising the following steps: First, a laser beam of width is used to scan along each row electrode lead 204 'removing electrodes of different rows The interlayer of the carbon nanotube film is such that the remaining carbon nanotube film structure is disposed only on the cathode electrode of the same row and the anode electrode 21〇. Wherein the width of the laser beam is equal to the inter-row distance between the cathode electrodes 212 of two adjacent rows. Eight; a person adopts a laser beam of a width of 疋 along each column electrode lead 〇6 to perform a sweeping & 'removing the column electrode lead to apply a non-carbon f film structure between adjacent anode electrodes, and making the same grid 214 The carbon nanotube film structure between the cathode electrode 212 and the anode electrode 21A of the towel is disconnected from the anode electrode 210. In this step, a plurality of electron-emitting ends 222 are formed at the break of the carbon nanotube film, and a space is formed between the electron-emitting end 222 and the anode electrode (four). Wherein, the width of the laser beam is greater than the distance between the column electrode lead 206 and the adjacent anode electrode 21A. It can be understood that the above method of cutting the structure of the carbon nanotube film by laser ablation can also be realized by multiple scanning of a narrow laser beam. 19 1352371 . Because of the infiltration of the carbon nanotube film structure by organic solvent, the parallel carbon nanotube fragments in the thin carbon nanotube structure will partially aggregate and shrink under the surface tension of the volatile organic solvent. The carbon nanotubes are formed, and the carbon nanotube bundles are arranged in a head-to-tail phase. Therefore, after the nano-carbon film structure is cut by the f-burning method, a plurality of parallels are formed between the anode electrode 21 and the cathode electrode. The carbon nanotube long-line emitters 208 are arranged at equal intervals. w # It can be understood that, in this embodiment, the laser beam of the width may be firstly swept along each column electrode lead , to remove the carbon nanotube between the column electrode lead 206 and the adjacent anode electrode 21〇. The film structure is such that the carbon nanotube film structure of the cathode electrode 212 and the anode electrode 21 in the same-grid 214 is disconnected from the anode electrode 21〇; and the laser beam of the degree is applied along each row electrode lead Scanning is performed to remove the carbon nanotube film between the electrodes of different rows. In the case of the case
--------- 上述切割奈米碳管薄膜結構的方法可以 2氣環㈣其他含氧的環境下進行1用雷射燒餘法去 除多餘的奈米碳管，雷射功率與掃描速度可以根據實際情 二ΙΓϊγ。本J施例中’優選地’所用的雷射光束的功率為 10〜50瓦’掃描速度為10〜⑽〇毫米/分鐘。所述雷射光束 的寬度為100微米〜400微米。 本實施例中、，還可以先將至少一上述奈米 厌g 4膜扠置於上述絕緣基底2〇2上形成一太 算 ，構，且該奈米碳管薄膜結構將該絕緣基底:^，再 在該奈米碳管薄膜結構上製備電極引線以及電極，最後； 20 c S ) 1352371 切割奈米碳管薄膜結構形成一場發射電子器件200。該方 ' 法製備的場發射電子器件200中，陰極發射體208與絕緣 基底202接觸設置。 本實施例中，採用絲網印刷法製備大面積場發射電子 器件200的電極和電極引線，且通過雷射燒蝕法切割和去 除奈米碳管薄膜製作陰極發射體208,無需對陰極發射體 208啟動或賦能處理的過程，步驟簡單，易於操作，成本 φ較低。而且，切割該奈米碳管薄膜製備的陰極發射體208 位於陽極電極210與陰極電極212之間的位置相同，故， 該場發射電子器件200發射的電子均勻性好。 請參閱圖3,本技術方案實施例進一步提供一種場發 射電子器件200,包括一絕緣基底202,複數個電子發射單 元220設置於該絕緣基底202上，以及複數個行電極引線 204與複數個列電極引線206設置於該絕緣基底202上。 所述複數個行電極引線204與列電極引線206分別平行且 •等間隔設置於絕緣基底202上，且，在行電極引線204與 列電極引線206交叉處由一介質絕緣層216隔離，以防止 短路。每兩個相鄰的行電極引線204與兩個相鄰的列電極 引線206形成一網格214，且每個網格214定位一個電子 發射單元220。 所述複數個電子發射單元220對應設置於上述網格 214中，且每個網格214中設置一個電子發射單元220。每 個電子發射單元220包括一陽極電極210與一陰極電極 212，以及一陰極發射體208。該陽極電極210與陰極電極 21 1352371 . 212對應且間隔設置。該陰極發射體208設置於陽極電極 .210與陰極電極212之間，且，陰極發射體2〇8 一端與陰 極電極212電連接，另一端指向陽極電極21〇。該陰極發 射體208與絕緣基底202間隔設置或設置於絕緣基底202 上。本實施例中’同一行的電子發射單元22〇中的陽極電 極210與同一行電極引線2〇4電連接，同一列的電子發射 單元220中的陰極電極212與同一列電極引線206電連接。 _ 所述陰極發射體208包括複數個平行且等間隔排列的 奈米兔管長線，每個奈米碳管長線的一端與陰極電極2工2 電連接，另一端指向陽極電極210,作為電子發射體218 的電子發射端222。該電子發射端222與陽極電極210之 間的距離為1〇微米〜200微米。該陰極發射體2〇8 一端與 陰極電極212的電連接方式可以為通過一導電膠電連接， 也可以通過分子間力或者其他方式實現。該奈米碳管長線 的長度為200微米〜400微米，且相鄰的奈米碳管長線之間 的間距為1奈米〜1〇〇奈米。該奈米碳管長線中包括複數個 首尾相連且擇優取向排列的奈米碳管束，相鄰的奈米碳管 束之間通過凡德瓦而力連接。該奈来碳管束中包括複數個 平行且緊密排列的奈米碳管。所述奈米碳管長線中的奈米 厌k為單壁、雙壁或多壁奈米碳管。所述奈米碳管的長度 範圍為10微米〜100微米，且奈米碳管的直徑小於15奈米。 θ綜上所述，本發明確已符合發明專利之要件，遂依法 提出專射請m所述者僅為本發明之較佳實施例， 自不能以此限制本案之申請專利範圍。舉凡熟悉本案技藝 22 (S ) 1352371 之人士援依本發明之精神所作之等效修飾或變化，皆應涵 蓋於以下申請專利範圍内。 【圖式簡單說明】 圖1為先前技術中的場發射電子器件的俯視圖。 圖2為本技術方案實施例的場發射電子器件的製備方 法流程圖。 圖3為本技術方案實施例的場發射電子器件的俯視 圖。 【主要元件符號說明】 場發射電子器件 100, 200 絕緣基底 102, 202 行電極引線 104, 204 列電極引線 106, 206 電子發射體 108, 218 行電極 110 列電極 112 電子發射區 114 介質絕緣層 116, 216 網格 118, 214 電子發射單元 120, 220 陰極發射體 208 陽極電極 210 陰極電極 212 電子發射端 222 23--------- The above method for cutting the structure of the carbon nanotube film can be carried out by using 2 gas rings (4) in other oxygen-containing environments to remove excess carbon nanotubes by laser burn-out method, and the laser power and The scanning speed can be based on the actual situation. The laser beam used in the 'preferably' embodiment of this J has a power of 10 to 50 watts and a scanning speed of 10 to 10 〇 mm/min. The laser beam has a width of from 100 micrometers to 400 micrometers. In this embodiment, at least one of the above-mentioned nano-optical film 4 forks may be first placed on the insulating substrate 2〇2 to form a solar cell structure, and the carbon nanotube film structure is used to: And preparing an electrode lead and an electrode on the carbon nanotube film structure, and finally; 20 c S ) 1352371 cutting the carbon nanotube film structure to form an electron-emitting device 200. In the field emission electronic device 200 prepared by the method, the cathode emitter 208 is placed in contact with the insulating substrate 202. In this embodiment, the electrodes and electrode leads of the large-area field emission electronic device 200 are prepared by screen printing, and the cathode emitter 208 is formed by cutting and removing the carbon nanotube film by laser ablation, without the need for a cathode emitter. 208 start or empower process, the steps are simple, easy to operate, and the cost φ is low. Moreover, the cathode emitter 208 prepared by cutting the carbon nanotube film is located at the same position between the anode electrode 210 and the cathode electrode 212, so that the field emission electron-emitting device 200 emits electrons with good uniformity. Referring to FIG. 3 , the embodiment of the present invention further provides a field emission electronic device 200 including an insulating substrate 202 , a plurality of electron emitting units 220 disposed on the insulating substrate 202 , and a plurality of row electrode leads 204 and a plurality of columns The electrode lead 206 is disposed on the insulating substrate 202. The plurality of row electrode leads 204 and the column electrode leads 206 are respectively disposed in parallel and at equal intervals on the insulating substrate 202, and are separated by a dielectric insulating layer 216 at the intersection of the row electrode leads 204 and the column electrode leads 206 to prevent Short circuit. Each two adjacent row electrode leads 204 and two adjacent column electrode leads 206 form a grid 214, and each grid 214 positions an electron-emitting unit 220. The plurality of electron emission units 220 are correspondingly disposed in the grid 214, and one electron emission unit 220 is disposed in each of the grids 214. Each electron-emitting unit 220 includes an anode electrode 210 and a cathode electrode 212, and a cathode emitter 208. The anode electrode 210 corresponds to the cathode electrode 21 1352371 . 212 and is spaced apart. The cathode emitter 208 is disposed between the anode electrode .210 and the cathode electrode 212, and one end of the cathode emitter 2〇8 is electrically connected to the cathode electrode 212, and the other end is directed to the anode electrode 21〇. The cathode emitter 208 is spaced apart from or disposed on the insulating substrate 202. In the present embodiment, the anode electrode 210 in the electron emission unit 22A of the same row is electrically connected to the same row electrode lead 2〇4, and the cathode electrode 212 in the electron emission unit 220 of the same column is electrically connected to the same column electrode lead 206. The cathode emitter 208 includes a plurality of parallel and equally spaced nanotube long wires, one end of each of the long carbon nanotubes is electrically connected to the cathode electrode 2, and the other end is directed to the anode electrode 210 as an electron emission. The electron emitting end 222 of the body 218. The distance between the electron-emitting end 222 and the anode electrode 210 is from 1 μm to 200 μm. The electrical connection between one end of the cathode emitter 2〇8 and the cathode electrode 212 may be electrically connected through a conductive paste, or may be achieved by intermolecular force or other means. The length of the long carbon nanotubes is from 200 micrometers to 400 micrometers, and the spacing between adjacent nanocarbon tubes is from 1 nanometer to 1 nanometer. The long carbon nanotube line includes a plurality of carbon nanotube bundles arranged end to end and preferentially oriented, and adjacent carbon nanotube bundles are connected by van der Waals force. The carbon nanotube bundle includes a plurality of parallel and closely packed carbon nanotubes. The nano-portion in the long line of the carbon nanotubes is a single-walled, double-walled or multi-walled carbon nanotube. The carbon nanotubes have a length ranging from 10 micrometers to 100 micrometers, and the carbon nanotubes have a diameter of less than 15 nanometers. As described above, the present invention has indeed met the requirements of the invention patent, and the only one of the inventions described above is only a preferred embodiment of the present invention, and it is not possible to limit the scope of the patent application in this case. Equivalent modifications or variations made by persons skilled in the art of the present invention in the spirit of the present invention are intended to be within the scope of the following claims. BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a top plan view of a field emission electronic device of the prior art. 2 is a flow chart of a method for preparing a field emission electronic device according to an embodiment of the present technical solution. Figure 3 is a top plan view of a field emission electronic device in accordance with an embodiment of the present technology. [Main component symbol description] Field emission electronic device 100, 200 Insulation substrate 102, 202 row electrode lead 104, 204 column electrode lead 106, 206 electron emitter 108, 218 row electrode 110 column electrode 112 electron emission region 114 dielectric insulating layer 116 , 216 grid 118, 214 electron emission unit 120, 220 cathode emitter 208 anode electrode 210 cathode electrode 212 electron emission end 222 23