1352369 九、發明說明·· 【發明所屬之技術領域】 本發明涉及一種電子發射器件及其製備方法，尤其涉 及一種基於奈米碳管的熱發射電子器件及其製備方法。 【先前技術】 從1991年曰本科學家Iijima首次發現奈米碳管以來 (請參見 Helical microtubules of graphitic carbon, Nature, 參Siimio Iijima, v〇l 354, p56(1991))，以奈米碳管為代表的奈 米材料以其獨特的結構和性質引起了人們極大的關注。近 幾年來，大量有關其在電子發射器件、感測器、新型光學 材料、軟鐵磁材料等領域的應用研究不斷被報導。 先前的電子發射器件依據電子發射原理的不同，可以 分為熱發射電子器件和熱發射電子器件。先前技術中的熱 發射電子器件，包括一絕緣基底，複數個電子發射單元設 置於該絕緣基底上，及複數個行電極引線與複數個列電極 引線设置於該絕緣基底上。其中，所述的複數個行電極引 線”複數個列電極引線分別平行且等間隔^置於絕緣基底 士。所述複數個行電極引線與複數個列電極引線相互交又 Γ置且在仃電極弓1線與列電極引線交又處由—介質絕緣 層隔離，以防止短政。生L k 相鄰的列電極引線开成=相鄰的行電極引線與每兩個 、’’ V成凋格，且每個網格定位一個電子 射::電子發射單元包括-行電極與-列電極及 電極對應且間該行電極與列電極上。該行電極與列 1352369 、 先前技術中的熱發射電子器件通常包括複數個單個熱 .電子發射單元組裝而成。熱電子發射單元一般包括一熱電 —·子發射體和兩個電極^所述熱電子發射體設置於兩個電極 之間並與所述兩個電極電接觸。通常採用金屬、硼化物材 料或者氧化物材料作為熱電子發射體材料。將金屬加工成 帶狀或者極細的絲，通過焊接等技術將金屬固定到所述兩 個電極之間。或者將以硼化物材料或者氧化物材料製成的 鲁漿料直接塗覆或者等離子噴塗在一加熱子上；通過焊接等 技術將加熱子固定到所述兩個電極之間。然而，由於製備 工藝和熱電子發射體材料所限制，很難將複數個單個熱電 子發射單元集成為熱發射電子器件，而不能實現發射性能 均勻一致且具有複數個熱電子發射單元的大面積陣列形式 的平面顯示裝置。而且，以金屬、硼化物材料或者鹼土金 屬碳酸鹽材料製作的熱電子發射體難以做到較小的尺寸， 從而限制了其在微型器件方面的應用。由於含金屬、硼化 鲁物材料或者鹼土金屬碳酸鹽材料的塗層具有相當高的電阻 率’所製備熱電子發射單元在加熱而發射時產生的功耗比 較大，限制了其對於快速開關的响應，因此不適合於高清 晰度和高亮度的應用。 有雲於此，提供一種具有優良的熱發射性能，可用于 同清晰度和高亮度的平板顯示和邏輯電路等複數個領域的 熱發射電子器件及其製備方法實為必要。 【發明内容】 一種熱發射電子器件’其包括：一絕緣基底；複數個 1352369 行電極引線與列電極引線分別平行且等間隔設置於絕緣基 底上，該複數個行電極引線與複數個列電極引線相互交= 設置，每兩個相鄰的行電極引線與每兩個相鄰的列電 線形成-個網格，且行電㈣線與列電極引線之間電絕 緣；複數個熱電子發射單元，每個熱電子發射單元對應， 個網格設置，每個熱電子發射單元包括一第一電極、: =電極和一熱電子發射體’該第一電極與第二電極間隔設 置於母個網格t，訪別與料行電㈣線和㈣極 電連接，所述熱電子發射體與所述第—電極和第二電極 連接，所述熱電子發射料—奈米碳㈣膜結構。 一種熱發射電子器件的製備方法，其包括以下步驟. 提供-絕緣基底；在該絕緣基底上製備複數個平 隔設置的行電極引線與列電極引線’且每兩個相鄰的行‘ 極引線與列電極引線相互交叉形成一網格；在上述網格中 複數個第一電極與複數個第二電極，且每個網格 一電極與一第二電極;形成-奈米 碳官薄膜結構覆盍上述含有電極和電極引線的絕緣基底上 作為熱電子發射體；切割並去除多餘的奈米碳管薄膜社 構：保留每個網格中覆蓋所述第一電極與第二電極的二： 碳管薄膜結構，從而得到一熱發射電子器件。 '、 與先前技術相比較’所述的熱發射電子器件及 方法可通過鋪設覆蓋奈米碳管薄膜結構製備複數個均 佈的熱電子發射單it，方法簡單。因採用奈米碳管薄^ 故具有優異的熱電子發射性能。而且，所述奈米碳管薄膜 1352369 結構電阻率低，在較低的熱功率下即可實現熱電子的發 - ^ 射，降低了所述熱發射電子器件在加熱時發射電子而產生 的功耗，可用于高清晰度和高亮度的平板顯示和邏輯電路 等複數個領域。 【實施方式】 以下將結合附圖詳細說明本技術方案熱發射電子器件 及其製備方法。 請參閱圖1，本技術方案實施例提供一種熱發射電子 器件200，包括一絕緣基底202，複數個熱電子發射單元 220設置於該絕緣基底202上，及複數個行電極引線204 與複數個列電極引線206設置於該絕緣基底202上。所述 複數個行電極引線204與列電極引線206分別平行且等間 隔設置於絕緣基底202上。所述複數個行電極引線204與 複數個列電極引線206相互交叉設置，而且，在行電極引 線204與列電極引線206交叉處設置有一介質絕緣層 鲁216，該介質絕緣層216將行電極引線204與列電極引線 206電隔離，以防止短路。每兩個相鄰的行電極引線204 與每兩個相鄰的列電極引線206形成一網格214，且每個 網格214定位一個熱電子發射單元220。 所述複數個熱電子發射單元220對應設置於上述網格 214中，且每個網格214中設置一個熱電子發射單元220。 每個熱電子發射單元220包括一第一電極210, 一第二電 極212，及一奈米碳管薄膜結構208。每一行的網格214 中的第一電極210與同一行電極引線204電連接，每一列 1352369 =二叫的第二電極212與同一列電極引線2〇6電連 袼214 ^電極210與第二電極212間隔設置於每個網 f2心，並與所述奈米碳管薄膜結構綱電連接。所述 薄膜結構綱至少部分通過所述第—電極21〇與 一厂電極212與絕緣基底搬間隔設置。本實施例中，同 订的熱電子發射單元22()中的第—電極2ig與同一行電 一引線綱電連接，同—列的熱電子發射單元220中的第 一電極212與同一列電極引線2〇6電連接。 :述的絕緣基底202為一絕緣基底，如陶£基底、玻 f基底、樹脂基底、石英基底等。絕緣基底2〇2大小與厚 又不限’本領域技術人員可以根據實際需要選擇。本實施 例中’絕緣基底202優選為-玻璃絕緣基底，其厚度為大 於1毫米’邊長大於1厘米。進一步’所述絕緣基底皿 的表面具有複數個對應於所述網格214設置的凹槽。該凹 槽等大且等間隔地分佈於所述絕緣基底2〇2表面。所述夺 米碳管薄膜結構208通過所述絕緣基底2〇2表面的凹槽= 二述絕緣基底202間隔設置，從而不會將加熱所述奈米碳 官薄膜結構208而產生的熱量傳導進大氣中，使所述熱發 射電子器件200具有優異的熱電子發射性能。 所述複數個行電極引線204與複數個列電極引線2〇6 為一導電體，如金屬層等。本實施例中，該複數個行電極 引線204與複數個列電極引線206優選為採用導電漿料印 刷的平面導電體，且該複數個行電極引線2〇4與複數個列 電極引線206的行距和列距為300微米〜5〇〇微米。該行電1352369 IX. INSTRUCTION DESCRIPTION OF THE INVENTION The present invention relates to an electron-emitting device and a method of fabricating the same, and more particularly to a carbon nanotube-based thermal emission electron device and a method of fabricating the same. [Prior Art] Since the discovery of carbon nanotubes by Ijima, the first scientist in 1991 (see Helical microtubules of graphitic carbon, Nature, Siimio Iijima, v〇l 354, p56 (1991)), the carbon nanotubes are used. The representative nanomaterials have attracted great attention due to their unique structure and properties. In recent years, a large number of applications in the fields of electron-emitting devices, sensors, new optical materials, and soft ferromagnetic materials have been reported. Previous electron-emitting devices can be classified into thermal-emitting electronic devices and thermal-emitting electronic devices depending on the principle of electron emission. The prior art thermal emitting electronic device includes an insulating substrate, a plurality of electron emitting units disposed on the insulating substrate, and a plurality of row electrode leads and a plurality of column electrode leads disposed on the insulating substrate. Wherein, the plurality of row electrode leads" of the plurality of column electrode leads are respectively disposed in parallel and at equal intervals in the insulating substrate. The plurality of row electrode leads and the plurality of column electrode leads are interdigitated and disposed on the germanium electrode The bow 1 line and the column electrode lead are separated by a dielectric insulating layer to prevent short-term administration. The adjacent Lk adjacent column electrode leads are opened = adjacent row electrode leads are separated from each of the two, ''V And each grid is positioned with an electron emission: the electron emission unit includes a row electrode corresponding to the column electrode and the electrode and between the row electrode and the column electrode. The row electrode and column 1352369, prior art thermal emission The electronic device usually comprises a plurality of individual thermal electron emission units assembled. The thermal electron emission unit generally comprises a thermoelectric--sub-emitter and two electrodes. The thermal electron emitter is disposed between the two electrodes and The two electrodes are electrically contacted. A metal, a boride material or an oxide material is usually used as the thermal electron emitter material. The metal is processed into a strip or a very fine wire, and the metal is solidified by welding or the like. Between the two electrodes, either directly coated with a boride material or an oxide material or plasma sprayed onto a heater; the heater is fixed to the two by welding or the like Between the electrodes. However, due to the limitations of the fabrication process and the thermal electron emitter material, it is difficult to integrate a plurality of individual thermal electron emission units into the thermal emission electrons, and it is not possible to achieve uniform emission performance and a plurality of thermal electron emission units. A planar display device in the form of a large area array. Moreover, a thermal electron emitter made of a metal, a boride material or an alkaline earth metal carbonate material is difficult to achieve a small size, thereby limiting its application in micro devices. Coatings containing metal, borated or alkaline earth metal carbonate materials have a relatively high electrical resistivity. The heat generated by the prepared thermoelectron emitting unit when heated and emitted is relatively large, which limits its response to fast switching. Should, therefore, not suitable for high-definition and high-brightness applications. The thermal emission performance, which can be used for a plurality of fields of heat-emitting electronic devices such as flat panel display and logic circuits of the same definition and high brightness, and a preparation method thereof are required. [A SUMMARY] A heat-emitting electronic device includes: An insulating substrate; a plurality of 1352369 row electrode leads and column electrode leads are respectively disposed in parallel and equally spaced on the insulating substrate, the plurality of row electrode leads and the plurality of column electrode leads intersecting each other, and each two adjacent row electrode leads are disposed Forming a grid with each two adjacent column wires, and electrically insulating between the row (four) wires and the column electrode leads; a plurality of thermal electron emission units, each corresponding to the thermoelectron emission unit, each grid setting, each The thermal electron emission unit includes a first electrode, a = electrode, and a thermal electron emitter. The first electrode and the second electrode are spaced apart from each other in a parent grid t, and the visitor is electrically connected to the (four) line and the (four) pole. The thermal electron emitter is connected to the first electrode and the second electrode, and the thermoelectron emitting material is a nanocarbon (tetra) film structure. A method of fabricating a thermal electron-emitting device, comprising the steps of: providing an insulating substrate; preparing a plurality of spaced-apart row electrode leads and column electrode leads ' on the insulating substrate and each two adjacent row 'pole leads Forming a grid with the column electrode leads; forming a plurality of first electrodes and a plurality of second electrodes in the grid, and each grid-electrode and a second electrode; forming a nano-carbon film structure盍 as the thermal electron emitter on the above insulating substrate containing the electrode and the electrode lead; cutting and removing the excess carbon nanotube film structure: retaining two of each grid covering the first electrode and the second electrode: carbon The film structure is such that a thermal electron-emitting device is obtained. The thermal emissive electronic device and method described in the 'Comparative with the prior art' can be prepared by laminating a carbon nanotube film structure to form a plurality of uniform thermal electron emission singles, which is simple. Excellent thermal electron emission performance due to the thinness of the carbon nanotubes. Moreover, the carbon nanotube film 1352369 has a low structural resistivity, and can realize the emission of hot electrons at a low thermal power, thereby reducing the work generated by the electron-emitting electrons when the electron-emitting device is heated. It can be used in a variety of fields such as high-definition and high-brightness flat panel displays and logic circuits. [Embodiment] Hereinafter, a thermal emission electronic device of the present technical solution and a preparation method thereof will be described in detail with reference to the accompanying drawings. Referring to FIG. 1 , an embodiment of the present disclosure provides a thermal emitting electronic device 200 including an insulating substrate 202 , a plurality of thermal electron emission units 220 disposed on the insulating substrate 202 , and a plurality of row electrode leads 204 and a plurality of columns The electrode lead 206 is disposed on the insulating substrate 202. The plurality of row electrode leads 204 and the column electrode leads 206 are respectively parallel and equally spaced on the insulating substrate 202. The plurality of row electrode leads 204 and the plurality of column electrode leads 206 are disposed to cross each other, and a dielectric insulating layer 216 is disposed at a intersection of the row electrode leads 204 and the column electrode leads 206, and the dielectric insulating layer 216 is provided with row electrode leads 204 is electrically isolated from column electrode leads 206 to prevent short circuits. Each two adjacent row electrode leads 204 and each two adjacent column electrode leads 206 form a grid 214, and each grid 214 positions a thermal electron emission unit 220. The plurality of thermal electron emission units 220 are correspondingly disposed in the mesh 214, and one thermal electron emission unit 220 is disposed in each of the grids 214. Each of the thermal electron emission units 220 includes a first electrode 210, a second electrode 212, and a carbon nanotube film structure 208. The first electrode 210 in the grid 214 of each row is electrically connected to the same row of electrode leads 204, and each column 1352369 = the second electrode 212 of the second row is electrically connected to the same column electrode lead 2〇6 214 ^ the electrode 210 and the second The electrodes 212 are spaced apart from the center of each mesh f2 and electrically connected to the carbon nanotube film structure. The film structure is disposed at least partially through the first electrode 21 and the factory electrode 212 and the insulating substrate. In this embodiment, the first electrode 2ig in the same thermal electron emission unit 22() is electrically connected to the same row and one lead, and the first electrode 212 and the same column electrode in the same-column thermal electron emission unit 220 are electrically connected. The leads 2〇6 are electrically connected. The insulating substrate 202 is an insulating substrate such as a substrate, a glass substrate, a resin substrate, a quartz substrate or the like. The size and thickness of the insulating substrate 2〇2 are not limited. Those skilled in the art can select according to actual needs. In the present embodiment, the insulating substrate 202 is preferably a glass insulating substrate having a thickness of more than 1 mm and a side length of more than 1 cm. Further, the surface of the insulating substrate has a plurality of grooves corresponding to the grid 214. The grooves are equally spaced and distributed at equal intervals on the surface of the insulating substrate 2〇2. The carbon nanotube film structure 208 is spaced apart by the grooves of the surface of the insulating substrate 2 = 2 = the insulating substrate 202 so as not to conduct heat generated by heating the nano carbon film structure 208 The heat-emitting electronic device 200 is made to have excellent thermal electron emission performance in the atmosphere. The plurality of row electrode leads 204 and the plurality of column electrode leads 2〇6 are an electrical conductor such as a metal layer or the like. In this embodiment, the plurality of row electrode leads 204 and the plurality of column electrode leads 206 are preferably planar conductors printed with conductive paste, and the row spacing of the plurality of row electrode leads 2〇4 and the plurality of column electrode leads 206 And the column spacing is 300 microns ~ 5 〇〇 microns. The line
11 < S 1352369 極引線204與列電極引線206的寬度為3〇微米〜1〇〇微米， 厚度為10微米〜50微米。本實施例中，該行電極引線2〇4 與列電極引線206的交叉角度為1〇度到9〇度，優選為9〇 度。本實施例中，通過絲網印刷法將導電漿料印刷於絕緣 基底202上製備行電極引線2G4與列電極引線裏。該導 電漿料的成分包括金屬粉、低熔點玻璃粉和粘結劑。其中， 該金屬粉優選為銀粉，該钻結劑優選為松油醇或乙基纖維 素。該導電聚料中’金屬粉的重量比為5〇〜9〇%，低溶點 玻璃粉的重量比為2〜1G%，钻結劑的重量比為1〇〜4〇%。 所述第一電極210與第二電極212為一導電體，如金 屬層等。本實施例中，該第-電極21〇與第二電極212為 一平面導電體，其尺寸依據網格214的尺寸蚊。該第一 和第二電極212直接與上述電極引線連接，從而 實現電連接。所述第-電極21〇與第二電極212的長度為 0:米〜90微米’寬度為3〇微米〜6〇微米’厚度為忉微 所述第一電極210與第二電極212之間的間 =為150微米〜微米。本實施例中，所述第一電極 二與第二電極212的長度優選為6〇微求，寬度優選為 210、愈^ ^選為2〇微米。本實施例中，所述第一電極 印刷：ί Μ的材料為導電襞料，通過絲網印刷法 /^緣基底202上。該導電襞料的成分與 線所用的導電漿料的成分相同。 电不5丨 所述奈米碳管薄臈結構包括一奈米 夕兩個重疊設置的奈米碳管薄 、- 目屬膜該奈米碳管薄膜中的11 < S 1352369 The pole lead 204 and the column electrode lead 206 have a width of 3 μm to 1 μm and a thickness of 10 μm to 50 μm. In this embodiment, the intersection angle of the row electrode lead 2〇4 and the column electrode lead 206 is from 1 to 9 degrees, preferably 9 degrees. In this embodiment, a conductive paste is printed on an insulating substrate 202 by a screen printing method to prepare a row electrode lead 2G4 and a column electrode lead. The composition of the conductive paste includes metal powder, low melting point glass frit, and a binder. Among them, the metal powder is preferably silver powder, and the binder is preferably terpineol or ethyl cellulose. The weight ratio of the metal powder in the conductive polymer is 5 〇 to 9 〇%, the weight ratio of the low melting point glass powder is 2 to 1 G%, and the weight ratio of the binder is 1 〇 to 4 〇%. The first electrode 210 and the second electrode 212 are an electric conductor such as a metal layer or the like. In this embodiment, the first electrode 21 〇 and the second electrode 212 are a planar electrical conductor whose size depends on the size of the mesh 214. The first and second electrodes 212 are directly connected to the above electrode leads to achieve electrical connection. The length of the first electrode 21 〇 and the second electrode 212 is 0: m to 90 μm and the width is 3 〇 micrometers to 6 〇 micrometers. The thickness is between the first electrode 210 and the second electrode 212. Between = 150 microns ~ micron. In this embodiment, the length of the first electrode 2 and the second electrode 212 is preferably 6 〇, the width is preferably 210, and the width is selected to be 2 〇 micrometer. In this embodiment, the first electrode is printed: the material of the crucible is a conductive crucible, and is printed on the substrate 202 by a screen printing method. The composition of the conductive paste is the same as the composition of the conductive paste used for the wire. The carbon nanotube thin crucible structure comprises a nanometer thin carbon nanotube thinly disposed on one nanometer, and is in the film of the carbon nanotube film.
12 1352369 、一奈米碳管沿同一方向擇優取向排列。所述單層奈米碳管薄 膜中的奈米碳管沿從所述第一電極210向所述第二電極 —212延伸的方向排列。所述重疊設置的奈米碳管薄膜中相 鄰的兩個奈米碳管薄膜中的奈米碳管的排列方向具有一交 又角度cx，0%c^9〇。。所述奈米碳管薄膜包括複數個首尾 相連且擇優取向排列的奈米碳管束，相鄰的奈米碳管束之 間通過凡德瓦爾力連接。該奈米碳管束包括複數個長度相 鲁等且相互平行排列的奈米碳管，相鄰奈米碳管之間通過凡 德瓦爾力連接。 本技術方案實施例中，由於採用CVD法在4英寸的 基底上生長超順排奈米碳管陣列，並進行進一步地處理得 到一奈米碳管薄膜，故該奈米碳管薄膜的寬度為〇 〇1厘米 〜10厘米，厚度為10奈米〜1〇〇微米。所述奈米碳管薄膜 可根據實際需要切割成具有預定尺寸和形狀的奈米碳管薄 膜。可以理解，當採用較大的基底生長超順排奈米碳管陣 釀列時，可以得到更寬的奈米碳管薄膜。上述奈米碳管薄膜 中的奈米碳管為單壁奈米碳管、雙壁奈米碳管或者多壁奈 米石厌官。當奈米碳管薄膜中的奈米碳管為單壁奈米碳管 時該單壁奈米碳管的直徑為0.5奈米〜50奈米。當奈米 反笞薄膜中的奈米碳管為雙壁奈米碳管時，該雙壁奈^碳 :，直徑為1.〇奈米〜5〇奈米。當奈米碳管薄膜中的奈米 碳管為多壁奈米碳管時，該多壁奈米碳管的直徑為U奈 米〜50奈米。所述奈米碳管薄膜結構208與第一電極21〇 和第二電極212的電連接方式可以為通過一導電膠電連 13 1352369 '接’也可以通過分子間力或者其他方式實現。 、 另外，所述熱發射電子器件200的每個熱電子發射單 兀220可以進一步包括至少一固定電極設置於所述第一電 ，210和第二電極212，將所述奈米碳管薄膜結構2〇8固 定於所述第一電極210和第二電極212。 請參閱圖2,本技術方案實施例提供一種上述熱發射 電子器件200的製備方法，具體包括以下步驟： φ 步驟一：提供一絕緣基底2〇2。 所述的絕緣基底202為一玻璃絕緣基底。進一步，通 過刻蝕在所述絕緣基底202表面形成複數個等大且等間隔 設置的凹槽。 步驟一.在該絕緣基底202上製備複數個平行且等間 隔設置的行電極引線204與列電極引線2〇6，該行電極引 線204與列電極引線2〇6交又設置，且每兩個相鄰的行電 極引線204與每兩個相鄰的列電極引線2〇6相互交又形成 鲁一網格214。 可以理解’也可以在所述絕緣基底202上形成複數個 網格214後再通過刻蝕在所述絕緣基底2〇2表面形成複數 個等大且等間隔設置的凹槽。該複數個凹槽分別與複數個 網格214對應並設置於所述絕緣基底2〇2上。 可以通過絲網印刷法、蒸鍵法或濺射法等方法製備複 數個灯電極引線204與複數個列電極引線2〇6。本實施例 中，採用絲網印刷法製備複數個行電極引線204與複數個 列電極引線206,其具體包括以下步驟： 14 C S ) 丄妁2369 ' 首先，採用絲網印刷法在絕緣基底202上印刷複數個 平行且等間隔設置的行電極引線2〇4。 .· 其次，採用絲網印刷法在行電極引線204與待形成的 幻電極引線206交叉處印刷複數個介質絕緣層216。 最後，採用絲網印刷法在絕緣基底202上印刷複數個 平行且等間隔設置的列電極引線2〇6，且複數個行電極引 線204與複數個列電極引線2〇6才目互交叉形成複數個網格 214 ° 可以理解，本實施例中，也可以先印刷複數個平行且 等間隔設置的列電極引線施，再印刷複數個介質絕緣層 216，最後印刷複數個平行且等間隔設置的行電極引線 204，且複數個行電極引線2〇4與複數個列電極引線2恥 相互交叉形成複數個網格214。 步驟三：在所述絕緣基底202上製備複數個第一電極 210與複數個第二電極212，在每個網格214中間隔設置一 鲁第一電極210與一第二電極212。 。又 製備複數個第一電極210與第二電極212可以通過絲 網印刷法、蒸鍍法或濺射法等方法實現。本實施例中，採 用絲網印刷法製備在每一行的網格214中行電極弓丨線2〇4 上製備一第一電極210,該第一電極210與同一行電極引 線204形成電連接；通過絲網印刷法、蒸鍍法或濺射法在 每一列的網格214中列電極引線206上製備一第二電極 212，該第一電極212與同一列電極引線2〇6形成電連接。 所述第一電極210與第二電極212之間保持一間距，用於 15 設置奈米碳管薄臈結構208 e所 丨叹·第—電極210盘第二雪 極212的厚度大於行電極引線2 /、 声，α_丄 與列電極引線206的厚 度，以利於後續步驟中設置奈米 饰站 ,-.,, 唧g溥膜結構208。可以 理解’本實知例中，也可以將所印刷的 應的列電極引線206直接接觸，從杳 且莜丧蜩從而實現電連接，第二電 極212與對應的行電極引線2〇 且筏接觸，從而實現電連 接012 1352369, one carbon nanotubes arranged in the same direction. The carbon nanotubes in the single-layered carbon nanotube film are arranged in a direction extending from the first electrode 210 to the second electrode - 212. The arrangement of the carbon nanotubes in the adjacent two carbon nanotube films in the overlapped carbon nanotube film has an angle of intersection cx, 0% c^9〇. . The carbon nanotube film comprises a plurality of carbon nanotube bundles arranged end to end and arranged in a preferred orientation, and adjacent carbon nanotube bundles are connected by van der Waals force. The carbon nanotube bundle includes a plurality of carbon nanotubes of equal length and arranged in parallel with each other, and adjacent carbon nanotubes are connected by van der Waals force. In the embodiment of the technical solution, since the ultra-sequential carbon nanotube array is grown on a 4-inch substrate by a CVD method and further processed to obtain a carbon nanotube film, the width of the carbon nanotube film is 〇〇 1 cm ~ 10 cm, thickness 10 nm ~ 1 〇〇 micron. The carbon nanotube film can be cut into a carbon nanotube film having a predetermined size and shape according to actual needs. It will be appreciated that a wider carbon nanotube film can be obtained when a larger substrate is used to grow a super-sequential carbon nanotube array. The carbon nanotubes in the above carbon nanotube film are single-walled carbon nanotubes, double-walled carbon nanotubes or multi-walled nano-stones. When the carbon nanotube in the carbon nanotube film is a single-walled carbon nanotube, the single-walled carbon nanotube has a diameter of 0.5 nm to 50 nm. When the carbon nanotube in the nano ruthenium film is a double-walled carbon nanotube, the double-walled carbon nanotube has a diameter of 1. 〇 nanometer ~ 5 〇 nanometer. When the carbon nanotube in the carbon nanotube film is a multi-walled carbon nanotube, the diameter of the multi-walled carbon nanotube is U nm to 50 nm. The electrical connection between the carbon nanotube film structure 208 and the first electrode 21A and the second electrode 212 may be made by a conductive adhesive 13 1352369 'connected' or by intermolecular force or other means. In addition, each of the thermionic emission cells 220 of the heat-emitting electronic device 200 may further include at least one fixed electrode disposed on the first electrode 210 and the second electrode 212, and the carbon nanotube film structure 2〇8 is fixed to the first electrode 210 and the second electrode 212. Referring to FIG. 2, an embodiment of the present invention provides a method for fabricating the above-described thermal-emitting electronic device 200, which specifically includes the following steps: φ Step 1: Provide an insulating substrate 2〇2. The insulating substrate 202 is a glass insulating substrate. Further, a plurality of equally large and equally spaced grooves are formed on the surface of the insulating substrate 202 by etching. Step 1. Prepare a plurality of parallel and equally spaced row electrode leads 204 and column electrode leads 2〇6 on the insulating substrate 202. The row electrode leads 204 and the column electrode leads 2〇6 are disposed again, and each two Adjacent row electrode leads 204 and each two adjacent column electrode leads 2〇6 intersect each other to form a Lu grid 214. It can be understood that a plurality of equal-sized grids 214 may be formed on the insulating substrate 202, and then a plurality of equally large and equally spaced grooves may be formed on the surface of the insulating substrate 2〇2 by etching. The plurality of grooves respectively correspond to the plurality of grids 214 and are disposed on the insulating substrate 2〇2. A plurality of lamp electrode leads 204 and a plurality of column electrode leads 2 〇 6 may be prepared by a screen printing method, a steam bonding method, or a sputtering method. In this embodiment, a plurality of row electrode leads 204 and a plurality of column electrode leads 206 are prepared by screen printing, which specifically includes the following steps: 14 CS ) 丄妁 2369 ' First, screen printing is performed on the insulating substrate 202. A plurality of parallel and equally spaced row electrode leads 2〇4 are printed. Second, a plurality of dielectric insulating layers 216 are printed by screen printing at the intersection of the row electrode leads 204 and the phantom electrode leads 206 to be formed. Finally, a plurality of parallel and equally spaced column electrode leads 2 〇 6 are printed on the insulating substrate 202 by screen printing, and the plurality of row electrode leads 204 and the plurality of column electrode leads 2 〇 6 intersect each other to form a plurality Grid 214 ° It can be understood that in this embodiment, a plurality of parallel and equally spaced column electrode leads can be printed first, then a plurality of dielectric insulating layers 216 are printed, and finally a plurality of parallel and equally spaced rows are printed. The electrode lead 204, and the plurality of row electrode leads 2〇4 and the plurality of column electrode leads 2 intersect each other to form a plurality of grids 214. Step 3: A plurality of first electrodes 210 and a plurality of second electrodes 212 are prepared on the insulating substrate 202, and a first electrode 210 and a second electrode 212 are disposed in each of the grids 214. . Further, the plurality of first electrodes 210 and the second electrodes 212 may be formed by a method such as a screen printing method, an evaporation method, or a sputtering method. In this embodiment, a first electrode 210 is prepared on the row electrode bow line 2〇4 in the grid 214 of each row by screen printing, and the first electrode 210 is electrically connected to the same row of electrode leads 204; A second electrode 212 is formed on the column electrode 206 in the grid 214 of each column by screen printing, evaporation or sputtering, and the first electrode 212 is electrically connected to the same column electrode lead 2〇6. A spacing is maintained between the first electrode 210 and the second electrode 212 for 15 setting the carbon nanotube thin structure 208 e to sigh · the first electrode 210 the thickness of the second snow pole 212 is greater than the row electrode lead 2 /, the sound, α_丄 and the thickness of the column electrode lead 206, in order to facilitate the setting of the nano-station station, -.,, 唧g溥 film structure 208 in the subsequent steps. It can be understood that in the present embodiment, the printed column electrode leads 206 may be directly contacted, and the electrical connection may be made from the sputum and the second electrode 212 is in contact with the corresponding row electrode lead 2 To achieve electrical connection 0
步驟四：形成一奈米碳管薄膜結構期 電極和電極引線的絕緣基底加上作為熱電子發射體。 所述形成-奈米碳管薄膜結構2〇8覆蓋上述含有電極 和電極引線的絕緣基底皿上作為熱電子發射體的方法具 體包括以下步驟： (1)製備至少一奈米碳管薄膜。 首先，提供一奈米碳管陣列，優選地，該陣列為超順 排奈米碳管陣列。 籲 ㈣施例中’奈米碳管陣列的製備方法採用化學氣相 ^積法，其具體步驟包括：（a)提供—平整基底，該基底 可選用P型或N型矽基底，或選用形成有氧化層的矽基 底本實轭例優選為採用4英寸的矽基底；（b)在基底表 面均勻形成一催化劑層，該催化劑層材料可選用鐵（h )、 錄（Co )、鎳（Ni )或其任意組合的合金之一；（c )將上 述形成有催化劑層的基底在700°C〜900°C的空氣中退火約 3〇分鐘〜90分鐘；（d)將處理過的基底置於反應爐中，在 保護氣體環境下加熱到50(TC〜74(TC，然後通入碳源氣體 C S > 16 1352369 反應約5分鐘~30分鐘’生長得到奈米碳管陣列，其高度 大於100微米。該奈米碳管陣列為複數個彼此平行且垂直 •於基底生長的奈米碳管形成的純奈米碳管陣列。該奈米碳 管陣列的面積與上述基底面積基本相同。通過上述控制生 長條件’該超順排奈米碳管陣列中基本不含有雜質，如無 定型碳或殘留的催化劑金屬顆粒等。 上述碳源氣可選用乙炔、乙烯、曱烧等化學性質較活 鲁潑的碳氫化合物’本實施例優選的碳源氣為乙炔；保護氣 體為氮氣或惰性氣體，本實施例優選的保護氣體為氬氣。 可以理解，本實施例提供的奈米碳管陣列不限於上述 製借方法，也可為石墨電極恒流電弧放電沈積法、 蒗 發沈積法等。 ^ 其-人’採用一拉伸工具從奈米碳管陣列中拉取獲得一 奈米碳管薄膜。 該奈米碳管薄膜的製備具體包括以下步驟：（a)從上 _述奈米碳管陣列中選定一定寬度的複數個奈米碳管片斷， 本實施例優選為採用具有一定寬度的膠帶接觸奈米碳管陣 列以選定一定寬度的複數個奈米碳管束；（b)以一定速度 =基本垂直于奈米碳管陣列生長方向拉伸複數個該奈米^ 官束’以形成一連續的奈米碳管薄臈。 在上述拉伸過程中，該複數個奈米碳管束在拉力作用 下&拉伸方向逐漸脫離基底的同時，由於凡德瓦爾力作 用，該選定的複數個奈米碳管束片斷分別與其他奈米碳管 束片斷首尾相連地連續地被拉出，從而形成一奈米碳管薄 17 1352369 膜f奈米兔管薄膜包括複數個首尾相連且定向排列的奈 米碳=束，且複數個首尾相連且定向排列的奈米碳管束形 成:米碳官線。該奈米碳管束包括複數個平行排列的奈 米碳官，且奈米碳管的排列方向基本平行于奈米碳管薄膜 的拉伸方向。 (2)將上述至少一奈米碳管薄膜鋪設於上述含有電極 和電極引線的絕緣基底2〇2上形成一奈米碳管薄膜結構 208 ° 所述將至少一奈米碳管薄膜鋪設於所述含有電極和電 極引線的絕緣基底202的方法包括以下步驟：將一奈米碳 管薄膜或者至少兩個奈米碳管薄膜平行且無間隙沿從所述 第電極210向所述第二電極212延伸的方向直接鋪設於 所述含有電極和電極引線的絕緣基底2〇2的表面。進一步 還可將至少兩個奈米碳管薄臈依據奈米碳管的排列方向以 一父又角度α重疊鋪設於所述含有電極和電極引線的絕緣 φ基底202的表面，〇%α$9〇。。 可以理解，所述將至少一奈米碳管薄膜鋪設於所述含 有電極和電極引線的絕緣基底2〇2的方法還可以包括以下 步驟·提供-支樓體；將至少兩個奈米碳管薄膜平行且無 間隙沿從所述第一電極210向所述第二電極212延伸的 向直接鋪設於所述支樓體表面’得到一奈米碳管薄膜結構 208 ;去除支稽體外多餘的奈米碳管薄膜；採用有機溶劑處 理該奈米峻官薄膜結構208 ;將使用有機溶劑處理後的奈 米碳管薄膜結構208從所述支樓體上取下，形成 ^ 18 c S ) 1352369 、的奈米碳管薄膜結構208 ;將該奈米碳管薄膜結構2〇8鋪 設於所述含有電極和電極引線的絕緣基底202的表面。進 一步還可將至少兩個奈米碳管薄膜依據奈米碳管的排列方 向以一交又角度α重疊鋪設於所述支撐體表面， 0°S〇^90°。由於本實施例提供的超順排奈米碳管陣列中的 奈米碳管非常純淨，且由於奈米碳管本身的比表面積非常 大，所以該奈米碳管薄膜本身具有較強的粘性，該奈米碳 暴官薄膜可利用其本身的粘性直接粘附於支撐體。 本實施例中，上述支撐體的大小可依據實際需求確 定。當支撐體的寬度大於上述奈米碳管薄膜的寬度時，可 以將至少兩個奈米碳管薄膜平行且無間隙或/和重疊鋪設 於所述支撐體，形成一自支撐的奈米碳管薄膜結構2〇8。 一本實施例令，由於本實施例步驟四中提供的超順排奈 米碳管陣列中的奈米碳管非常純淨，且由於奈米碳管本身 的比表面積非常大，所以該奈米碳管薄膜結構本身具有較 籲強的㈣。該奈米碳管薄膜可利用其本身的枯性直接枯附 於所述含有電極和電極引線的絕緣基底2〇2的表面。或者 在所述所述含有電極和電極引線的絕緣基底2〇2的表面塗 敷一層導電膠；將至少-奈米碳管薄膜於整個含有電極和 電極引線的絕緣基底202上，使所述至少一奈米碳管薄膜 與所述含有電極和電極引線的絕緣基底2〇2的表面電連 接，將大於絕緣基底202面積的奈米碳管薄膜剪去。 一本實施例令，進一步包括採用絲網印刷法製備至少一 固定電極（圖中未顯示）設置於所述第—電極細與第二電 19 < S ) 1352369 極212，將奈米碳管薄膜結構208牢固地固定於所述第一 電極210第二電極212上。 另外，本實施例還可進一步在將奈米碳管薄膜直接鋪 設於所述含有電極和電極引線的絕緣基底形成一奈米碳管 薄膜結構208的步驟之後採用有機溶劑處理該奈米碳管等 膜結構208。具體的，可通過試管將有機溶劑滴落在所述 奈米碳管薄膜結構208表面浸潤整個奈米碳管薄膜結構 籲208。或者，也可將奈米碳管薄膜結構2〇8整個浸入盛有有 機溶劑的容器尹浸潤。該有機溶劑為揮發性有機溶劑如 乙醇、甲醇、賴、二氣乙貌或氣仿，本實施财優選採 用乙醇。該奈米碳管薄膜經有機溶劑浸潤處理後，在揮發 '^機溶劑的表面張力的作用下’奈米碳管薄膜結構咖 中的平行的奈米碳管片斷會部分聚集成奈米碳管束，因 此，該奈米碳管薄膜表面體積、，純降低，且 好的機械強度及韌性，應用右 八 ^ 膜性能更加優異。』有機騎丨處理後的奈米碳管薄 步驟五·切割並去除多餘的 保留每個網格214中覆蓋 “ 4膜、〜構208， 212的奈米碳管薄膜結構，從—，21G與第二電極 2〇〇。 從而侍到一熱發射電子器件 所述切割並去除多餘 為雷射燒㈣或電子束碳管薄膜結構通的方法 射燒钱法切_述奈 2 °本實施例中，優選採用雷 步驟： 、反B溥膜結構208，具體包括以下 20 1352369 疋寬度的雷射光束沿著每個行電 204進行掃描。該步驟 丁电極Μ線 乂驟的目的係去除不同行的電極（包括 第一電極210與第-雷杌。n、 、匕栝 遍m+ )之間的奈米碳管薄膜結構 八 〔雷射光束的寬度等於位於不同行的兩個彳目 鄰的第二電極212夕P卩认日日 丁刃两個相 ^ 之間的仃間距離，為100微米〜500微米。 206谁:旙^用一定寬度的雷射光束沿著每個列電極引線 進仃知描，去除不同列的電極（包括第-電極210與 第-電極212)之間的奈米碳管薄臈結構剔。從而保留每 個:格f14中覆蓋所述第一電極210與第二電極212的奈 米碳管薄膜結冑2〇8。其中，所述雷射光束的寬度等於位 於不同列的兩個相鄰的第一電極21〇之間的行間距離，為 100微米〜500微米。 ㈤本實施例令，上述方法可以在大氣環境或其他含氧的 裒境下進行。採用雷射燒餘法去除多餘的奈米碳管，所用 的雷射功率為10瓦〜50瓦，掃描速度為10毫米/分鐘〜1000 #毫米/分鐘。本實施例中，優選地，雷射功率為3〇瓦掃 描速度為100毫米/分鐘。 與先前技術相比較，所述的熱發射電子器件具有以下 優點：其一，採用奈米碳管薄膜作為熱電子發射體，該奈 米碳管薄膜中的奈米碳管均勻分佈，所製備的熱發射電子 器件可以發射均勻而穩定的熱電子流；其二，奈米碳管薄 膜與絕緣基底間隔設置，絕緣基底不會將加熱所述奈米碳 官薄膜而產生的熱量傳導進大氣中，故所製備的熱發射電 子器件的熱電子發射性能優異；其三’所述奈米礙管薄膜 21 Ϊ352369 結構的尺寸小可直接鋪設覆蓋所述電極， 器件中熱電子發射單元的微型化，從而。現熱發射電子 高亮度的平板顯示和邏輯電路等複數個清晰度和 綜上所述，本發明確已符合發明利之要 提出專利申請。惟，以上所述者僅為太恭】之要件遂依法 工所义有偟為本發明之較佳實施例， 自不能以此限制本案之中請專利範圍。舉凡熟悉本案技藝 之人士援依本發明之精神所作之等效修飾或變化，皆應涵 蓋於以下申請專利範圍内。Step 4: Forming a carbon nanotube film structure period The insulating substrate of the electrode and the electrode lead is added as a thermal electron emitter. The method of forming the carbon nanotube film structure 2〇8 covering the above-mentioned insulating substrate containing the electrode and the electrode lead as a thermal electron emitter comprises the following steps: (1) preparing at least one carbon nanotube film. First, a carbon nanotube array is provided, preferably the array is a super-sequential carbon nanotube array. (4) The method for preparing a nanocarbon tube array adopts a chemical vapor deposition method, and the specific steps thereof include: (a) providing a flat substrate, the substrate may be selected from a P-type or N-type germanium substrate, or may be selected to form The yoke substrate having an oxide layer is preferably a 4-inch ruthenium substrate; (b) a catalyst layer is uniformly formed on the surface of the substrate, and the catalyst layer material may be selected from the group consisting of iron (h), recording (Co), and nickel (Ni). Or one of the alloys of any combination thereof; (c) annealing the substrate on which the catalyst layer is formed in air at 700 ° C to 900 ° C for about 3 minutes to 90 minutes; (d) placing the treated substrate In a reaction furnace, heat up to 50 (TC~74 (TC, then pass into the carbon source gas CS > 16 1352369 reaction for about 5 minutes to 30 minutes) to obtain a carbon nanotube array with a height greater than that in a protective gas atmosphere. 100 micrometers. The carbon nanotube array is a plurality of pure carbon nanotube arrays formed by carbon nanotubes which are parallel to each other and vertically grown on the substrate. The area of the carbon nanotube array is substantially the same as the area of the substrate. The above controlled growth conditions 'the super-shunned nano The tube array contains substantially no impurities, such as amorphous carbon or residual catalyst metal particles, etc. The above carbon source gas may be selected from acetylene, ethylene, cesium or the like, which are more chemically active than the hydrocarbons in the present embodiment. The source gas is acetylene; the shielding gas is nitrogen or an inert gas, and the preferred shielding gas in this embodiment is argon. It is understood that the carbon nanotube array provided in this embodiment is not limited to the above-mentioned method of production, and may be a graphite electrode. Flow arc discharge deposition method, burst deposition method, etc. ^ It-human's use a stretching tool to extract a carbon nanotube film from a carbon nanotube array. The preparation of the carbon nanotube film specifically includes the following Step: (a) selecting a plurality of carbon nanotube segments of a certain width from the array of upper carbon nanotubes. In this embodiment, it is preferred to contact the carbon nanotube array with a tape having a certain width to select a plurality of widths. a bundle of carbon nanotubes; (b) stretching a plurality of the nanotubes at a constant speed = substantially perpendicular to the growth direction of the carbon nanotube array to form a continuous thin carbon nanotube. During the stretching process, the plurality of carbon nanotube bundles are gradually separated from the substrate under the tensile force, and the selected plurality of carbon nanotube bundle segments are respectively combined with other nanoparticles due to the van der Waals force. The carbon tube bundle segments are continuously pulled out end to end to form a carbon nanotube thin 17 1352369 membrane f nanotube membrane comprises a plurality of end-to-end aligned carbon nanotubes, and a plurality of ends are connected The aligned carbon nanotube bundles are formed: a carbon carbon official line. The carbon nanotube bundle includes a plurality of parallel carbon nanotubes arranged in parallel, and the arrangement direction of the carbon nanotubes is substantially parallel to the stretching direction of the carbon nanotube film. (2) laying the at least one carbon nanotube film on the insulating substrate 2〇2 containing the electrode and the electrode lead to form a carbon nanotube film structure 208°, laying at least one carbon nanotube film on the film The method of insulating substrate 202 comprising an electrode and an electrode lead comprises the steps of: paralleling a carbon nanotube film or at least two carbon nanotube films from the first electrode 210 to the The direction in which the second electrode 212 extends is directly laid on the surface of the insulating substrate 2 2 including the electrode and the electrode lead. Further, at least two carbon nanotube thin layers may be overlapped on the surface of the insulating φ substrate 202 containing the electrode and the electrode lead by a parent angle α according to the arrangement direction of the carbon nanotubes, 〇%α$9〇 . . It can be understood that the method of laying at least one carbon nanotube film on the insulating substrate 2〇2 containing the electrode and the electrode lead may further include the following steps: providing a branch body; and at least two carbon nanotubes The film is parallel and without gaps along the surface extending from the first electrode 210 to the second electrode 212 to directly lay on the surface of the support body to obtain a carbon nanotube film structure 208; a carbon nanotube film; treating the nano-junior film structure 208 with an organic solvent; removing the carbon nanotube film structure 208 treated with an organic solvent from the support body to form ^ 18 c S ) 1352369 , The carbon nanotube film structure 208; the carbon nanotube film structure 2〇8 is laid on the surface of the insulating substrate 202 containing the electrode and the electrode lead. Further, at least two carbon nanotube films may be additionally laid on the surface of the support at an angle of an angle α according to the arrangement direction of the carbon nanotubes, 0°S 〇 90°. Since the carbon nanotube in the super-sequential carbon nanotube array provided by the embodiment is very pure, and the specific surface area of the carbon nanotube itself is very large, the carbon nanotube film itself has strong viscosity. The nanocarbon violent film can be directly adhered to the support by its own viscosity. In this embodiment, the size of the support body can be determined according to actual needs. When the width of the support body is larger than the width of the carbon nanotube film, at least two carbon nanotube films may be laid in parallel and without gaps or/and overlapping on the support to form a self-supporting carbon nanotube. The film structure is 2〇8. In an embodiment, since the carbon nanotubes in the super-sequential carbon nanotube array provided in the fourth step of the embodiment are very pure, and because the specific surface area of the carbon nanotube itself is very large, the nanocarbon The tube film structure itself is more aggressive (four). The carbon nanotube film can be directly adhered to the surface of the insulating substrate 2 2 containing the electrode and the electrode lead by its own dryness. Or applying a layer of conductive paste on the surface of the insulating substrate 2〇2 containing the electrode and the electrode lead; and coating at least the carbon nanotube film on the insulating substrate 202 including the electrode and the electrode lead, so that the at least A carbon nanotube film is electrically connected to the surface of the insulating substrate 2〇2 containing the electrode and the electrode lead, and the carbon nanotube film larger than the area of the insulating substrate 202 is cut. An embodiment of the invention further comprises: preparing at least one fixed electrode (not shown) by screen printing on the first electrode and the second electrode 19 < S) 1352369 pole 212, the carbon nanotube The film structure 208 is firmly fixed to the second electrode 212 of the first electrode 210. In addition, in this embodiment, the carbon nanotube film is further disposed on the insulating substrate including the electrode and the electrode lead to form a carbon nanotube film structure 208, and the carbon nanotube is treated with an organic solvent. Membrane structure 208. Specifically, an organic solvent may be dropped on the surface of the carbon nanotube film structure 208 through a test tube to infiltrate the entire carbon nanotube film structure 208. Alternatively, the carbon nanotube film structure 2〇8 may be immersed in a container filled with an organic solvent to infiltrate. The organic solvent is a volatile organic solvent such as ethanol, methanol, lanthanum, dioxane or gas, and ethanol is preferably used in the present embodiment. After the carbon nanotube film is infiltrated by the organic solvent, the parallel carbon nanotube segments in the carbon nanotube film structure are partially aggregated into the carbon nanotube bundle under the action of the surface tension of the solvent. Therefore, the surface of the carbon nanotube film is reduced in volume, purity, and good mechanical strength and toughness, and the performance of the right film is more excellent. 』 Organic rider treated after the carbon nanotube thin step five·cut and remove excess retention of each mesh 214 covered in 4 membranes, ~ 208, 212 carbon nanotube film structure, from -, 21G with The second electrode 2〇〇 is thus served to a heat-emitting electronic device to cut and remove excess laser radiation (four) or electron beam carbon tube film structure through the method of burning money method Preferably, the lightning step: the reverse B 溥 film structure 208, specifically including the following 20 1352369 疋 wide laser beam is scanned along each row 204. The purpose of the step 丁 electrode 乂 line step is to remove different rows. The carbon nanotube film structure between the electrodes (including the first electrode 210 and the first thunder. n, 匕栝 m m+ ) [the width of the laser beam is equal to the two adjacent lines in different rows The two electrodes 212 卩 卩 卩 卩 丁 丁 丁 丁 丁 丁 丁 丁 丁 丁 丁 丁 丁 丁 丁 丁 丁 丁 206 206 206 206 206 206 206 206 206 206 206 206 206 206 206 206 206 206 206 206 206 206 Knowing that the electrodes of different columns are removed (including the first electrode 210 and the first electrode 212) The carbon nanotubes are thinned between the structures, thereby preserving each of the carbon nanotube film caps 2 〇 8 covering the first electrode 210 and the second electrode 212 in the cell f14. The width of the beam is equal to the inter-row distance between two adjacent first electrodes 21A of different columns, ranging from 100 micrometers to 500 micrometers. (V) In the present embodiment, the above method can be used in the atmosphere or other oxygen-containing helium. Under the circumstances, the laser is used to remove excess carbon nanotubes, and the laser power used is 10 watts to 50 watts, and the scanning speed is 10 mm/min to 1000 #mm/min. In this embodiment, The laser power is 3 watts and the scanning speed is 100 mm/min. Compared with the prior art, the heat-emitting electronic device has the following advantages: First, using a carbon nanotube film as a thermal electron emitter, The carbon nanotubes in the carbon nanotube film are uniformly distributed, and the prepared heat-emitting electronic device can emit a uniform and stable flow of hot electrons; second, the carbon nanotube film is spaced apart from the insulating substrate, and the insulating substrate is not Heating the nanocarbon officer The heat generated by the film is conducted into the atmosphere, so that the prepared heat-emitting electronic device has excellent thermal electron emission performance; and the three 'nano-invasive film 21 Ϊ 352369 structure has a small size to directly cover the electrode, the device The miniaturization of the medium-heat electron-emitting unit, and thus the high-brightness of the high-brightness flat panel display and logic circuit and the like, and the above-mentioned invention, the present invention has indeed met the patent application for the invention. The above is only the content of the Taigong]. It is a preferred embodiment of the invention. It is not possible to limit the scope of the patent in this case. Anyone who is familiar with the skill of the case will be assisted by the spirit of the present invention. Equivalent modifications or variations are intended to be included within the scope of the following claims.
C S > 22 1352369 【圖式簡單說明】 r' 圖1係本技術方案實施例的熱發射電子器件的結構示 > •意圖。 圖2係本技術方案實施例的熱發射電子器件的製備方 法的流程示意圖。 【主要元件符號說明】 熱發射電子器件 200 絕緣基底 202 行電極引線 204 列電極引線 206 奈米碳管薄膜結構 208 第一電極 210 第二電極 212 網格 214 介質絕緣層 216 熱電子發射單元 220 23C S > 22 1352369 [Simplified description of the drawings] r' Fig. 1 is a structural diagram of a heat-emitting electronic device of an embodiment of the present technical solution. FIG. 2 is a schematic flow chart of a method for preparing a thermal emission electronic device according to an embodiment of the present technical solution. [Main component symbol description] Thermal emission electronic device 200 Insulation substrate 202 Row electrode lead 204 Column electrode lead 206 Carbon nanotube film structure 208 First electrode 210 Second electrode 212 Grid 214 Dielectric insulating layer 216 Thermal electron emission unit 220 23